JPH02125607A - Sample holder for electron beam drawing equipment - Google Patents
Sample holder for electron beam drawing equipmentInfo
- Publication number
- JPH02125607A JPH02125607A JP63279730A JP27973088A JPH02125607A JP H02125607 A JPH02125607 A JP H02125607A JP 63279730 A JP63279730 A JP 63279730A JP 27973088 A JP27973088 A JP 27973088A JP H02125607 A JPH02125607 A JP H02125607A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- grounding
- mask
- sample holder
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 8
- 229910000906 Bronze Inorganic materials 0.000 abstract description 2
- 239000010974 bronze Substances 0.000 abstract description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は集積回路部品やフォトマスクやコンピュータの
回路基板等の製造に用いられる電子ビーム描画装置用試
料ホルダーに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sample holder for an electron beam lithography system used for manufacturing integrated circuit components, photomasks, computer circuit boards, and the like.
電子ビーム描画装置は、試料基板であるマスクやウェハ
や回路基板の上に塗布した電子線感光レジスト上に電子
線を照射して、高精度の配線パターンや回路パターンを
描画する装置である。An electron beam drawing device is a device that draws highly accurate wiring patterns and circuit patterns by irradiating an electron beam onto an electron beam-sensitive resist coated on a sample substrate such as a mask, wafer, or circuit board.
従来この電子ビーム描画装置でマスク描画に使用される
試料ホルダーは第4図に示すように、マスク2を挿入・
固定でき、接地針3が通常1本が2本取り付けられた構
造となっている。Conventionally, the sample holder used for mask lithography with this electron beam lithography system has a structure in which the mask 2 is inserted and inserted, as shown in FIG.
It can be fixed, and has a structure in which two grounding needles 3 are usually attached instead of one.
そして第5図に示すように、石英板2A上に設けられた
Cr等からなる金属膜2Bと電子線感光レジスト2Cと
から構成されるマスク2を、試料ホルダー1に保持した
のち電子線7が照射されるが、電子線感光レジスト2c
を感光させた電子線7の電荷を金属膜2Bと接地針6を
通して導電性である試料ホルダ−1自体へ導き除去でき
る構造となっている。As shown in FIG. 5, a mask 2 consisting of a metal film 2B made of Cr or the like provided on a quartz plate 2A and an electron beam photoresist 2C is held on a sample holder 1, and then an electron beam 7 is applied. Although it is irradiated, the electron beam sensitive resist 2c
The structure is such that the charge of the electron beam 7 that has exposed the sample can be guided through the metal film 2B and the grounding needle 6 to the conductive sample holder 1 itself and removed.
しかしながら上述した従来の電子ビーム描画装置用試料
ホルダーを用いてパターンを描画した場合、以下に述べ
る電子線の電流量の増大に伴い、描画位置の精度が低下
するという欠点がある。However, when a pattern is drawn using the above-described conventional sample holder for an electron beam drawing apparatus, there is a drawback that the accuracy of the drawing position decreases as the amount of current of the electron beam increases, which will be described below.
(1)回路基板を描画するための、数十ミクロンのビー
ム幅を有する電子ビーム描画装置が開発された。(1) An electron beam drawing device with a beam width of several tens of microns has been developed for drawing circuit boards.
(2)1μm以下の円形ビームによる描画から、可変成
形ビームによる大面積の1ショット描画が実用化した。(2) From writing with a circular beam of 1 μm or less, one-shot writing of a large area using a variable shaped beam has been put into practical use.
(3)より精度の高いパターンを形成するため、感度の
悪い電子線感光レジストも使用しなければならなくなっ
た。(3) In order to form a pattern with higher precision, it is now necessary to use an electron beam photoresist with poor sensitivity.
(4)描画速度向上のため、単位時間あたりの電子線の
入射量が増加した。(4) In order to improve drawing speed, the amount of incident electron beam per unit time has increased.
マスクに入射される電子線は第6図に示すように、入射
点8で電子線感光レジスト2Cを感光させた後、矢印の
ように金属膜2B内を放射状に広がって進み、接地針6
の接触点9に集まる。As shown in FIG. 6, the electron beam incident on the mask exposes the electron beam photoresist 2C at the incident point 8, spreads radially within the metal film 2B as shown by the arrow, and travels to the ground needle 6.
It gathers at the contact point 9.
このような電子の流れにより発生する磁界10は第7図
に矢印で示すようになる。この磁界10は、電子線7が
強く、かつ入射点8と接触点9の距離が近くなるほど大
きくなり、描画する電子線7を偏向させて入射点8の位
置を図の下方へ移動させる。またこの磁界10は、電子
線7が初めて入射した瞬間は存在しないが、入射し続け
ると発生するので、電子線7の断続に伴って変動する特
徴があり、補正が困難である。The magnetic field 10 generated by this flow of electrons is as shown by the arrows in FIG. This magnetic field 10 becomes larger as the electron beam 7 becomes stronger and the distance between the incident point 8 and the contact point 9 becomes shorter, and it deflects the electron beam 7 to be drawn and moves the position of the incident point 8 downward in the figure. Further, this magnetic field 10 does not exist at the moment when the electron beam 7 first enters the magnetic field, but is generated when the electron beam 7 continues to enter the magnetic field 10. Therefore, it has a characteristic that it fluctuates as the electron beam 7 is interrupted and is difficult to correct.
本発明の電子ビーム描画装置用試料ホルダーは、電子線
感光レジストが形成された試料基板を保持する試料ホル
ダーの周辺部に、試料基板の描画領域を囲むように複数
の接地板または接地針を設けたものである。In the sample holder for an electron beam lithography system of the present invention, a plurality of ground plates or ground needles are provided at the periphery of the sample holder that holds a sample substrate on which an electron beam photoresist is formed so as to surround the drawing area of the sample substrate. It is something that
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の第1の実施例の斜視図であり、マスク
を保持した状態を示している。FIG. 1 is a perspective view of a first embodiment of the present invention, showing a state in which a mask is held.
マスク2は第5図で説明したように、石英板2A上に形
成された金属膜2Bと電子線感光レジスト2Cとから構
成されるが、マスク2の金属膜2Bに接触して接地を行
うリン青銅からなる接地板3は、マスク2の描画領域4
を囲むように試料ホルダー1の周辺部に設けられており
、マスク2を試料ホルダー1に保持した時、接地板3は
バネの力により金属膜2Bに接し、第2図に示すように
接地領域5を形成する。As explained in FIG. 5, the mask 2 is composed of a metal film 2B formed on a quartz plate 2A and an electron beam photoresist 2C. The grounding plate 3 made of bronze covers the drawing area 4 of the mask 2.
When the mask 2 is held on the sample holder 1, the ground plate 3 comes into contact with the metal film 2B due to the force of the spring, and as shown in FIG. form 5.
このように構成された第1の実施例によれば、マスク2
の描画領域4のどの位置に電子線が入射しても、その電
子は入射点から放射状に広がり続けて、最寄りの接地類
i!!15より接地板3を通って流出するので、電子の
流れの片寄りを無くすることができ、電子線の入射位置
を偏向させる磁界の発生を極めて少くすることができる
。According to the first embodiment configured in this way, the mask 2
No matter where in the drawing area 4 the electron beam is incident, the electrons continue to spread radially from the point of incidence to the nearest ground class i! ! 15 and flows out through the ground plate 3, it is possible to eliminate unevenness in the flow of electrons, and the generation of a magnetic field that deflects the incident position of the electron beam can be extremely reduced.
第3図は本発明の第2実施例の斜視図であり、保持され
たマスク2の描画範囲を囲むように試料ホルダー1に接
地針3を多数配置したものである。この第2の実施例に
おいても、マスク2に入射した電子を放射状に広がらせ
て最寄りの接地針3から流出させることができる。FIG. 3 is a perspective view of a second embodiment of the present invention, in which a large number of grounding needles 3 are arranged on the sample holder 1 so as to surround the drawing range of the held mask 2. Also in this second embodiment, the electrons incident on the mask 2 can be spread radially and flowed out from the nearest grounding needle 3.
以上説明したように本発明は、保持された試料基板の描
画領域を囲むように、試料ホルダーの周囲に複数の接地
板または接地針を設けることにより、描画を行なう電子
線を偏向させる磁界の発生を防止することができるとい
う効果がある。As explained above, the present invention provides a plurality of ground plates or ground needles around the sample holder so as to surround the drawing area of the held sample substrate, thereby generating a magnetic field that deflects the electron beam for drawing. This has the effect of being able to prevent.
第1図は本発明の第1の実施例の斜視図、第2図は第1
の実施例の効果を説明するためのマスクの上面図、第3
図は本発明の第2の実施例の斜視図、第4図及び第5図
は従来の試料ホルダーの斜視図及び断面図、第6図及び
第7図は電子ビームの入射によるマスク上の電子の流れ
と磁界の分布を示す図である。
1・・・試料ホルダー、2・・・マスク、2A・・・石
英板、2B・・・金属膜、2C・・・電子線感光レジス
ト、3・・・接地板、4・・・描画領域、5・・・接地
領域、6・・・接地針、7・・・電子線、8・・・入射
点、9・・・接触線、10・・・磁界。
ノー(*十ホル什
/
翳
!
ワ
第
図
翳
図FIG. 1 is a perspective view of the first embodiment of the present invention, and FIG. 2 is a perspective view of the first embodiment of the present invention.
A top view of the mask for explaining the effects of the embodiment 3.
The figure shows a perspective view of the second embodiment of the present invention, FIGS. 4 and 5 are perspective views and cross-sectional views of a conventional sample holder, and FIGS. 6 and 7 show electrons on a mask due to the incidence of an electron beam. FIG. 2 is a diagram showing the flow and magnetic field distribution. DESCRIPTION OF SYMBOLS 1... Sample holder, 2... Mask, 2A... Quartz plate, 2B... Metal film, 2C... Electron beam photoresist, 3... Ground plate, 4... Drawing area, 5... Grounding area, 6... Grounding needle, 7... Electron beam, 8... Incident point, 9... Contact line, 10... Magnetic field. No (*tenth hole / shadow! wa stage diagram shadow diagram
Claims (1)
料ホルダーの周辺部に、試料基板の描画領域を囲むよう
に複数の接地板または接地針を設けたことを特徴とする
電子ビーム描画装置用試料ホルダー。A sample for an electron beam lithography apparatus, characterized in that a plurality of ground plates or ground needles are provided at the periphery of a sample holder that holds a sample substrate on which an electron beam photoresist is formed, so as to surround the drawing area of the sample substrate. holder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63279730A JPH02125607A (en) | 1988-11-04 | 1988-11-04 | Sample holder for electron beam drawing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63279730A JPH02125607A (en) | 1988-11-04 | 1988-11-04 | Sample holder for electron beam drawing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02125607A true JPH02125607A (en) | 1990-05-14 |
Family
ID=17615086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63279730A Pending JPH02125607A (en) | 1988-11-04 | 1988-11-04 | Sample holder for electron beam drawing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02125607A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999047977A1 (en) * | 1998-03-13 | 1999-09-23 | Infineon Technologies Ag | Retaining device for photo blanks |
US8742376B2 (en) | 2012-07-02 | 2014-06-03 | Nuflare Technology, Inc. | Method and apparatus of mask drawing using a grounding body at lowest resistance value position of the mask |
-
1988
- 1988-11-04 JP JP63279730A patent/JPH02125607A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999047977A1 (en) * | 1998-03-13 | 1999-09-23 | Infineon Technologies Ag | Retaining device for photo blanks |
US6972832B1 (en) | 1998-03-13 | 2005-12-06 | Infineon Technologies Ag | Method of grounding a photoblank to a holding device |
US8742376B2 (en) | 2012-07-02 | 2014-06-03 | Nuflare Technology, Inc. | Method and apparatus of mask drawing using a grounding body at lowest resistance value position of the mask |
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