JPH01187926A - Manufacture of mask and reticle - Google Patents
Manufacture of mask and reticleInfo
- Publication number
- JPH01187926A JPH01187926A JP63013015A JP1301588A JPH01187926A JP H01187926 A JPH01187926 A JP H01187926A JP 63013015 A JP63013015 A JP 63013015A JP 1301588 A JP1301588 A JP 1301588A JP H01187926 A JPH01187926 A JP H01187926A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- reticle
- contact
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 abstract description 4
- 239000002313 adhesive film Substances 0.000 abstract description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract description 2
- 229920002554 vinyl polymer Polymers 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造等に使用されるマスク及びレ
チクルの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing masks and reticles used in manufacturing semiconductor devices and the like.
従来、マスクやレチクルを製造する工程において、荷電
ヒーム露光を行なう際には、第3図(a)に示すように
、先端を鋭利に加工した導通ピン5を、ばねの力等を利
用して、乾板10に強く押しつける事により、電子ビー
ムレジスト4等の非導電性物質層を貫通させ、その下の
クロム等の金属層2に接触させる事により゛露光装置と
乾板1oとの電気的導通を取っていた。Conventionally, when performing charged beam exposure in the process of manufacturing masks and reticles, as shown in FIG. By pressing strongly against the dry plate 10, the non-conductive material layer such as the electron beam resist 4 is penetrated, and by contacting the metal layer 2 such as chromium underneath, electrical continuity between the exposure device and the dry plate 1o is established. I was taking it.
上述した従来の露光法では、ばねの力が経時変化により
弱化したり、また第3図(b)に示すように、導通ピン
5の先端が磨耗したりして、非導電性物質層を確実に貫
通する事が難くなり、その結果露光装置と乾板との電気
的導通が取れなくなるという欠点がある。In the conventional exposure method described above, the force of the spring weakens over time, and the tip of the conductive pin 5 wears out as shown in FIG. This has the disadvantage that it becomes difficult to penetrate through the film, and as a result, electrical continuity between the exposure device and the dry plate cannot be established.
電気的な導通が取れないと、露光中に乾板上に電荷が蓄
積してしまい、パターンドリフトの原因となったり、突
発的な放電による局所的なパターンずれが生じたりし、
露光精度上非常に好ましくない現象が発生する。具体的
には、パターンドリフトだけでも、30分間で1μm近
く動く場合があり、マスク及びレチクル精度上大きな問
題となる。If electrical continuity is not established, charge will accumulate on the dry plate during exposure, causing pattern drift, or local pattern misalignment due to sudden discharge.
A very undesirable phenomenon occurs in terms of exposure accuracy. Specifically, pattern drift alone may move nearly 1 μm in 30 minutes, which poses a major problem in terms of mask and reticle accuracy.
本発明のマスク及びレチクル製造方法は、荷電ビーム露
光を行ないガラス基板上の金属膜にパターンを形成する
マスク及びレチクルの製造方法であって、前記金属膜上
に形成するホトレジスト膜に該金属膜に接触させる導通
ピン用の開口部を設けるものである。The mask and reticle manufacturing method of the present invention is a mask and reticle manufacturing method in which a pattern is formed on a metal film on a glass substrate by performing charged beam exposure, and the method includes applying a photoresist film formed on the metal film to a photoresist film formed on the metal film. An opening is provided for the conductive pin to be brought into contact.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)〜(d)は本発明の第1の実施例を説明す
るための工程順に示したガラス基板の断面図である。FIGS. 1(a) to 1(d) are cross-sectional views of a glass substrate shown in order of steps for explaining a first embodiment of the present invention.
まず第1図(a)に示すように、ガラス基板1上にクロ
ム等の金属層2を形成する。次に露光工程において導通
ピンが接触する部分にあらかじめビニール系の接着フィ
ルム等からなるコート材3を接着させておく。コート3
の材質としては電子ビームレジストに触れても変質せず
、かつ金属層に接着する事が可能なものであればよい。First, as shown in FIG. 1(a), a metal layer 2 of chromium or the like is formed on a glass substrate 1. Next, a coating material 3 made of vinyl-based adhesive film or the like is adhered in advance to the portion that will be contacted by the conductive pin in the exposure process. coat 3
Any material may be used as long as it does not change in quality even if it comes into contact with the electron beam resist and can be bonded to the metal layer.
次に第1図(b)に示すように、金属層2上に電子ビー
ムレジスト4を塗布したのち、第1図(c)に示すよう
に、コート材3を剥離する事により開口部7を形成し、
導電性物質である金属層2を露出させる。Next, as shown in FIG. 1(b), after coating an electron beam resist 4 on the metal layer 2, as shown in FIG. 1(c), the opening 7 is formed by peeling off the coating material 3. form,
The metal layer 2, which is a conductive material, is exposed.
このようにして形成された乾板10Aに荷電ビーム露光
を行ないマスクまたはレチクルを形成する。この場合第
1図(d)に示すように、確実に導通ピン5を金属層2
に接触させ導通をとる事ができる。このため導通がとれ
ていない場合に比ベパターンドリフトを115以下にお
さえる事ができる。The thus formed dry plate 10A is subjected to charged beam exposure to form a mask or reticle. In this case, as shown in FIG. 1(d), be sure to connect the conductive pin 5 to the metal layer 2.
can be contacted to establish continuity. Therefore, the comparative pattern drift can be suppressed to 115 or less when conduction is not established.
第2図は本発明の第2の実施例を説明するためのガラス
基板と導通装置の断面図である。FIG. 2 is a sectional view of a glass substrate and a conductive device for explaining a second embodiment of the present invention.
まず第2図<a)に示すように、クロム等の金属層2が
形成されたガラス基板1上に先端が平らな導通ピン5A
を有する導通装置8を装着し、導通ピン5Aを金属層2
に接触させる。First, as shown in FIG. 2 <a), a conductive pin 5A with a flat tip is placed on a glass substrate 1 on which a metal layer 2 such as chromium is formed.
The conduction device 8 having the conduction pin 5A is attached to the metal layer 2.
contact with.
次に第2図(a)に示すように、金属層2の表面に電子
ビームレジスト4を塗布し乾板10Bを形成する。Next, as shown in FIG. 2(a), an electron beam resist 4 is applied to the surface of the metal layer 2 to form a dry plate 10B.
次に第2図(C)に示すように、導通装置8を装着した
まま乾板10Bを試料台6にセットし、荷電ビーム露光
を行なうことによりマスクまたはレチクルを形成する。Next, as shown in FIG. 2C, the dry plate 10B is set on the sample stage 6 with the conduction device 8 attached, and a mask or reticle is formed by performing charged beam exposure.
このように本第2の実施例では、導通装置8の導通ピン
5Aを金属層2に接触させると共に、こ導通ピン5A自
体がレジスト膜に開口部を形成する役目をはなすことに
なる。従って、金属層2の導通ピンとの電気的接触はよ
り確実なものとなる。In this way, in the second embodiment, the conductive pin 5A of the conductive device 8 is brought into contact with the metal layer 2, and the conductive pin 5A itself serves to form an opening in the resist film. Therefore, the electrical contact between the metal layer 2 and the conductive pin becomes more reliable.
以上説明したように、本発明はマスク及びレチクル製造
の為の荷電ビーム露光を行なう際に、金属膜上のホトレ
ジスト膜に、金属膜に接触させる導通ピン用の開口部を
設けることにより、乾板と荷電ビーム露光装置との電気
的導通が確実にとれ、露光中に乾板上に電荷が蓄積する
ことがなくなり、パターンのドリフト等の発生がなくな
るため、マスク及びレチクルの精度を向上させる事がで
きる効果がある。As explained above, the present invention enables the photoresist film on the metal film to have openings for the conductive pins that come into contact with the metal film when performing charged beam exposure for manufacturing masks and reticles. Electrical continuity with the charged beam exposure device is ensured, and charge does not accumulate on the dry plate during exposure, eliminating the occurrence of pattern drift, which improves the precision of masks and reticles. There is.
第1図及び第2図は本発明の第1及び第2の実施例を説
明するためのガラス基板の断面図、第3図は従来のマス
ク及びレチクルの製造方法を説明するためのガラス基板
の断面図である。
1・・・ガラス基板、2・・・金属層、3・・・コート
材、4・・・電子ビームレジスト、5.5A・・・導通
ピン、6・・・試料台、7・・・開口部、8・・・導通
装置、10゜10A、IOB・・・乾板。1 and 2 are cross-sectional views of a glass substrate for explaining the first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a glass substrate for explaining a conventional mask and reticle manufacturing method. FIG. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Metal layer, 3... Coating material, 4... Electron beam resist, 5.5A... Conductive pin, 6... Sample stand, 7... Opening Part, 8... Conduction device, 10° 10A, IOB... Dry plate.
Claims (1)
ーンを形成するマスク及びレチクルの製造方法において
、前記金属膜上に形成するホトレジスト膜に該金属膜に
接触させる導通ピン用の開口部を設けることを特徴とす
るマスク及びレチクルの製造方法。In a method for manufacturing a mask and a reticle in which a pattern is formed on a metal film on a glass substrate by performing charged beam exposure, an opening for a conductive pin to be brought into contact with the metal film is provided in a photoresist film formed on the metal film. Characteristic methods for manufacturing masks and reticles.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63013015A JPH01187926A (en) | 1988-01-22 | 1988-01-22 | Manufacture of mask and reticle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63013015A JPH01187926A (en) | 1988-01-22 | 1988-01-22 | Manufacture of mask and reticle |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01187926A true JPH01187926A (en) | 1989-07-27 |
Family
ID=11821330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63013015A Pending JPH01187926A (en) | 1988-01-22 | 1988-01-22 | Manufacture of mask and reticle |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01187926A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999047977A1 (en) * | 1998-03-13 | 1999-09-23 | Infineon Technologies Ag | Retaining device for photo blanks |
JP2008058809A (en) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | Substrate cover, and charged particle beam drawing device and method |
JP2010067781A (en) * | 2008-09-10 | 2010-03-25 | Toppan Printing Co Ltd | Electron beam lithography method, electron beam lithography apparatus, and photomask |
-
1988
- 1988-01-22 JP JP63013015A patent/JPH01187926A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999047977A1 (en) * | 1998-03-13 | 1999-09-23 | Infineon Technologies Ag | Retaining device for photo blanks |
JP2008058809A (en) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | Substrate cover, and charged particle beam drawing device and method |
JP2010067781A (en) * | 2008-09-10 | 2010-03-25 | Toppan Printing Co Ltd | Electron beam lithography method, electron beam lithography apparatus, and photomask |
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