JPH01175218A - Manufacture of ceramic electronic component - Google Patents

Manufacture of ceramic electronic component

Info

Publication number
JPH01175218A
JPH01175218A JP62335142A JP33514287A JPH01175218A JP H01175218 A JPH01175218 A JP H01175218A JP 62335142 A JP62335142 A JP 62335142A JP 33514287 A JP33514287 A JP 33514287A JP H01175218 A JPH01175218 A JP H01175218A
Authority
JP
Japan
Prior art keywords
electrode paste
pbo
sio2
ceramic electronic
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62335142A
Other languages
Japanese (ja)
Inventor
Toshio Ogawa
敏夫 小川
Atsushi Sano
篤史 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP62335142A priority Critical patent/JPH01175218A/en
Publication of JPH01175218A publication Critical patent/JPH01175218A/en
Pending legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To simplify a manufacturing process sharply by coating an electrode paste on a dielectric porcelain composition molded body to which PbO.GeO2- based, PbO.B2O3.SiO2-based or Na2O.B2O3.SiO2-based glass has been added as an auxiliary component so that this paste can be baked collectively and simultaneously. CONSTITUTION:xPbO.yGeO2 (where x=1-6 and y=1-3), in a range of 0.01-30wt.% of a main component, which is PbO.GeO2-based, PbO.B2O3.SiO2- based or Na2O.B2O3.SiO2-based glass having a property to behave ferroelectrically and a low melting point, is added to a dielectric porcelain composition as the main component; a hetero-phase ceramic bulk is generated by a liquid sintering operation, and is sintered at a low temperature of 850-1000 deg.C without lowering a characteristic inherent in a dielectric porcelain. By this setup, an electrode paste can be baked simultaneously and collectively, which was impossible by a conventional method. An arbitrary electrode paste for baking use which contains a conductive powder such as Ag, Cu or the like can be used as the electrode paste.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、低温焼結可能な誘電体磁器組成物を用いてセ
ラミック電子部品を製造する方法に関し、特に電橋材料
および磁器組成物を同時焼成することを特徴とするもの
に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing ceramic electronic components using a dielectric ceramic composition that can be sintered at low temperatures, and particularly relates to a method for manufacturing ceramic electronic components using a dielectric ceramic composition that can be sintered at low temperatures. It relates to something that is characterized by being fired.

〔従来の技術〕[Conventional technology]

誘電体磁器材料は、圧電部品、コンデンサあるいは焦電
素子などの種々の電子部品に用いられている。この種の
誘電体磁器組成物としては、チタン酸鉛系、チタン酸ジ
ルコン酸鉛系、チタン酸バリウム系などの圧電性、焦電
性、強誘電性を示すものが用いられている。
Dielectric ceramic materials are used in various electronic components such as piezoelectric components, capacitors, and pyroelectric elements. As this type of dielectric ceramic composition, those exhibiting piezoelectricity, pyroelectricity, and ferroelectricity, such as lead titanate-based, lead zirconate titanate-based, and barium titanate-based compositions, are used.

上述したような電子部品を得るにあたっては、誘電体磁
器組成物を成形して成形体を得、この成形体を焼成して
誘電体磁器を作成する0次に、得られた誘電体磁器に電
極ペーストを印刷した後、焼成して該電極ペーストを焼
き付け、電極を形成する。
To obtain the above-mentioned electronic components, a dielectric porcelain composition is molded to obtain a molded body, and this molded body is fired to create a dielectric porcelain. After printing the paste, the electrode paste is baked to form an electrode.

〔発明が解決しようとする問題点] 誘電体磁器の焼結温度は約1100″Cと高く、電極ペ
ーストの焼き付は温度とかなり隔たっているため、上記
のように2度の焼成を行わなければ電子部品あるいは電
子部品素体を得ることはできなかった。
[Problems to be Solved by the Invention] The sintering temperature of dielectric porcelain is as high as approximately 1100"C, and the firing temperature of the electrode paste is quite different from that of the sintering temperature, so it is necessary to perform the firing twice as described above. However, it was not possible to obtain electronic components or electronic component elements.

よって、本発明の目的は、誘電体磁器に電極が形成され
たセラミック電子部品を1度の焼成により得る方法を提
供することにある。
Therefore, an object of the present invention is to provide a method for obtaining a ceramic electronic component in which electrodes are formed on dielectric ceramic by one firing.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、誘電体磁器組成物を主成分とし、副成分とし
てP b O−G e Os系、Pb0−B、Os  
・5lox系またはNa、0−BI Os  ’310
8系ガラスを添加してなる誘電体磁器組成物を成形して
成形体を得る工程と、 得られた成形体に電極ペーストを塗布する工程と、 成形体および電極ペーストを同時焼成する工程とを備え
ることを特徴とするものである。
The present invention has a dielectric ceramic composition as a main component, and P b O-G e Os system, Pb0-B, Os
・5lox series or Na, 0-BI Os '310
A step of molding a dielectric ceramic composition formed by adding 8 series glass to obtain a molded object, a step of applying an electrode paste to the obtained molded object, and a step of co-firing the molded object and the electrode paste. It is characterized by having

主成分である誘電体磁器組成物としては、チタン酸鉛系
、チタン酸ジルコン酸鉛系、チタン酸バリウム系、チタ
ン酸ストロンチウム系、およびチタン酸マグネシウム系
等を例示することができるが、これらに限定されるもの
ではない。
Examples of dielectric ceramic compositions that are main components include lead titanate, lead zirconate titanate, barium titanate, strontium titanate, and magnesium titanate. It is not limited.

チタン酸バリウム系の組成物には、真性および変性チタ
ン酸バリウム系磁器組成物が含まれる。
Barium titanate-based compositions include true and modified barium titanate-based porcelain compositions.

チタン酸鉛系の組成物とは、真性および変性チタン酸鉛
系磁器組成物を意味し、変性チタン酸鉛系磁器組成物に
は、単純酸化物であるCry’s、Nbi Os 、T
ag Os 、Bit Os 、MnO3など遷移元素
酸化物を添加したもの、PbサイトをMg、Ca、Sr
、Ba等のアルカリ土類金属やLaw o3 、Ndx
 Os 、Yt Os等の希土類で置換したもの、およ
びPbTiOsの一部を後述の一般式(1)〜(V[)
で示される少なくとも一種の複合ペロブスカイト化合物
で置換した2成分系、3成分系その他の多成分系磁器組
成物あるいはこれらの組み合わせたものが含まれる。
Lead titanate-based compositions refer to genuine and modified lead titanate-based porcelain compositions, and modified lead titanate-based porcelain compositions include simple oxides such as Cry's, Nbi Os, T
ag Os, Bit Os, MnO3 and other transition element oxides, Pb sites are replaced with Mg, Ca, Sr.
, alkaline earth metals such as Ba, Law o3, Ndx
Those substituted with rare earth elements such as Os, YtOs, and a part of PbTiOs are substituted with general formulas (1) to (V[) described below.
It includes two-component ceramic compositions, three-component ceramic compositions, and other multi-component ceramic compositions substituted with at least one kind of composite perovskite compound represented by the above formula, or a combination thereof.

また、チタン酸ジルコン酸鉛系組成物とは、真性および
変性チタン酸ジルコン酸鉛系磁器組成物を意味し、変性
チタン酸ジルコン酸鉛系磁器組成物には、Pb (TI
、Zr)OsにCrgO,、Lag Os 、Nbi 
Os 、B it Os 、MnOxなと金属酸化物を
添加したもの、pbサイトをMg、Ca、Sr、Ba等
のアルカリ土類金属やLam o$ 、Ndl Os 
、Yt Os等の希土類で置換したもの、およびPb 
(TiZr)Oxの一部を下記の一般式(1)〜(Vl
)で示される少な(とも一種の複合ペロブスカイト形化
合物で置換した3成分系、4成分系その他の多成分系磁
器組成物あるいはこれらの組み合わせたものが含まれる
Furthermore, the lead zirconate titanate-based composition refers to both genuine and modified lead zirconate titanate-based porcelain compositions, and the modified lead zirconate titanate-based porcelain composition includes Pb (TI
, Zr) Os to CrgO,, Lag Os, Nbi
Os, Bit Os, MnOx, etc., with addition of metal oxides, pb site with alkaline earth metals such as Mg, Ca, Sr, Ba, Lamo$, Ndl Os
, those substituted with rare earth elements such as YtOs, and Pb
A part of (TiZr)Ox is expressed by the following general formulas (1) to (Vl
) 3-component, 4-component and other multi-component ceramic compositions substituted with one kind of composite perovskite compound, or a combination thereof.

前記複合ペロブスカイト形化合物の代表的なものとして
は、 一般式(1):A” (B+zs” Bl/S” )O
sで示される化合物、例えば、 Ba(Znws Nb5zs )Os 、Ba(Cd+
zi Nbmzs ) 0ssBa(Mg+zs Nb
mzs )Os 、Sr(Cd+zs Nbmzs )
 Os、Pb(Mg+zs Nbmzs )Os 、P
b(Ni+z* Nbmzs ) Os、PR(Mll
tzs Nbmzs )Os 、Pb(FILzs T
ays ) Os、Pb(Ni+/* rag/3 )
Os 、Pb(Cd+/s Nbmzs ) Os ;
一般式(If):A” (B+zt” Bl/!” )
Oコで示される化合物、例えば、 Ha(Fe171 Nb+zs )Os 、Ba(SC
I/l Nb+zm ) Os、Ca(Cr+yt N
b+z* )Os 、Pb(Fe1zl NbIyz 
) Os、Pb(Fe+z* τal/l )Os 、
Pb(Sc、zl NbI/z ) Os、Pb(SC
I/l rat/1 )Os 5Pb(Yb+z* N
b+z* ) Ox、Pb(Yb+z* ta+/意)
Os 、Pb(LLII/l Nbl/l ) Os、
Pb(In+/奮Nb+z寥)Os  i一般式(II
I):A”″(Bu/z意’ B+zt” )Osで示
される化合物、例えば、 Pb(Cd+i* Wl/I )Os 、Pb(Mn+
7m W+/l ) Os、Pb(Zn+/* w、、
、 )ox 、Pb(Mg+zg Vhyt ) Os
、Pb(CO+zx w+、/* )Os 、Pb(N
i+zt W+yx ) Os、Pb(MLzt te
l/g )Os 、Pb(Mn+zt Te+zz )
 Os、Pb(Cotzt Te+z* )os  ;
一般式(iV):A草 (B t/1”°Bl/3” 
)Osで示される化合物、例えば、Pb(Feys W
+/5)Osニ一般式(V): A” (B+/l” 
Bl/!” )Osで示される化合物、例えば、 Pb(Sn+z* sbl/l )Os 、La(Mg
+zg Titzs )Os、Nd(Mg+zx Ti
tzs )Os  ;および、一般式(VI) + (
Al/l” A+z*” ) B”Osで示される化合
物、例えば、 (Natzt La+zm )TIOs 、(K+/l
 La+zm )TIOs 、(1ial/l Ce+
zt )Ties 、(Natzt Natzt )T
ies 、(Nd宜/富 Bi、、茸 )TiOコ ・
 (K1/冨 Bi l/雪 )Ties  ・などが
挙げられる。
Typical examples of the composite perovskite compound include the general formula (1): A"(B+zs"Bl/S")O
Compounds represented by s, for example, Ba(ZnwsNbzs)Os, Ba(Cd+
zi Nbmzs ) 0ssBa(Mg+zs Nb
mzs ) Os , Sr (Cd+zs Nbmzs )
Os, Pb(Mg+zs Nbmzs) Os, P
b(Ni+z*Nbmzs) Os, PR(Mll
tzs Nbmzs )Os , Pb(FILzs T
ays) Os, Pb(Ni+/*rag/3)
Os, Pb(Cd+/sNbmzs) Os;
General formula (If): A” (B+zt” Bl/!”)
Compounds represented by O, for example, Ha(Fe171Nb+zs)Os, Ba(SC
I/l Nb+zm) Os, Ca(Cr+yt N
b+z*)Os, Pb(Fe1zl NbIyz
)Os, Pb(Fe+z*τal/l)Os,
Pb(Sc, zl NbI/z) Os, Pb(SC
I/l rat/1 )Os 5Pb(Yb+z*N
b+z*) Ox, Pb (Yb+z* ta+/ meaning)
Os, Pb(LLII/l Nbl/l) Os,
Pb (In+/Nb+z寥)Os i general formula (II
I): Compounds represented by A""(Bu/z'B+zt")Os, for example, Pb(Cd+i*Wl/I)Os, Pb(Mn+
7m W+/l) Os, Pb(Zn+/* w,,
, )ox, Pb(Mg+zgVhyt)Os
, Pb(CO+zx w+, /*)Os , Pb(N
i+zt W+yx ) Os, Pb(MLzt te
l/g ) Os , Pb (Mn+zt Te+zz )
Os, Pb(Cotzt Te+z*)os;
General formula (iV): A grass (B t/1”°Bl/3”
)Os, for example, Pb(Feys W
+/5) General formula (V): A” (B+/l”
B/! ”)Os, for example, Pb(Sn+z*sbl/l)Os, La(Mg
+zg Titzs )Os, Nd(Mg+zx Ti
tzs )Os ; and general formula (VI) + (
Compounds represented by Al/l"A+z*")B"Os, for example, (Natzt La+zm)TIOs, (K+/l
La+zm)TIOs, (1ial/l Ce+
zt ) Ties, (Natzt Natzt )T
ies, (Nd Gi/Wealth Bi,, Mushroom) TiOko・
(K1/Tomi Bi I/Yuki) Ties etc.

そのほかに、非還元性の誘電体磁器組成物も挙げられる
Other examples include non-reducible dielectric ceramic compositions.

〔作用〕[Effect]

本発明では、主成分の上記誘電体磁器組成物に、低融点
で強誘電体性挙動を示す性質を有するPbO・GeOx
系、Pbo ・Bm Os  ・S Lot系またはN
ag O・Bx 03  ・S lot系ガラスで示さ
れるガラスを添加し、液相焼結により異相セラミックバ
ルクを生成させ、それによって誘電体磁器が本来有する
特性、たとえば電気機械結合係数を大幅に低下させるこ
となく850〜1000℃の低温で焼結させることを可
能とし、それによって、従来不可能であった電極ペース
トの焼き付けを同時にかつ一体的に行うことを可能とし
たものである。
In the present invention, PbO/GeOx, which has a property of exhibiting ferroelectric behavior at a low melting point, is added to the dielectric ceramic composition as the main component.
system, Pbo ・Bm Os ・S Lot system or N
ag O・Bx 03 ・S Lot glass is added to produce a different phase ceramic bulk through liquid phase sintering, thereby significantly reducing the inherent properties of dielectric ceramics, such as the electromechanical coupling coefficient. This makes it possible to sinter the electrode paste at a low temperature of 850 to 1000° C., thereby making it possible to simultaneously and integrally bake the electrode paste, which was previously impossible.

本発明における誘電体磁器組成物の成形については、プ
レス形成法、押し出し成形法、シート成形法、ホットプ
レス法など任意の成形方法を用いることができる。
For molding the dielectric ceramic composition in the present invention, any molding method such as a press molding method, an extrusion molding method, a sheet molding method, a hot pressing method, etc. can be used.

また、電極ペーストとしても、AgやCuなどの導電性
粉末を含有する任意の焼き付は用電極ペーストを用いる
ことができる。
Further, as the electrode paste, any baking electrode paste containing conductive powder such as Ag or Cu can be used.

さらに、電極ペーストの成形体への塗布についても、印
刷その他の方法を用いることができる。
Furthermore, printing or other methods can be used to apply the electrode paste to the molded body.

副成分である上記ガラスは、誘電体磁器組成物の焼結温
度を低下させるが、好ましくは、その含有量は主成分の
0.01〜30重景%の範囲とされる。0.01重量%
未満では、焼結温度を低下させる効果をさほど期待する
ことはできず、他方、30重量%を趙えると、焼結温度
は低下するが電気特性、たとえば電気機械結合係数の低
下が目立つからである。
The above-mentioned glass, which is a subcomponent, lowers the sintering temperature of the dielectric ceramic composition, and its content is preferably in the range of 0.01 to 30% by weight of the main component. 0.01% by weight
If the amount is less than 30% by weight, the effect of lowering the sintering temperature cannot be expected to be significant. On the other hand, if the amount is less than 30% by weight, the sintering temperature will be lowered, but the decrease in electrical properties, such as the electromechanical coupling coefficient, will be noticeable. be.

特に好ましくは、ガラスとしてxPbo−yGe O*
  (X −1〜6 、  V = 1〜3 )を用い
れば、後述する実施例から明らかなように、誘電体磁器
の電気特性の劣化を効果的に防止することができる。な
おx、yの値をx−1〜6.7−1〜3としたのは、低
温で溶融することによりガラス化することができるとと
もに、このガラスを熱処理して再結晶させたものについ
て強誘電的性質が得られるからである。
Particularly preferably, the glass is xPbo-yGe O*
If (X −1 to 6, V = 1 to 3) is used, deterioration of the electrical characteristics of the dielectric ceramic can be effectively prevented, as is clear from the examples described later. The values of x and y are set to x-1 to 6.7-1 to 3 because it can be vitrified by melting at a low temperature, and it also has strong properties when this glass is heat-treated and recrystallized. This is because dielectric properties can be obtained.

〔実施例の説明〕[Explanation of Examples]

裏旌■土 第1表に示すように、誘電体磁器組成物として、P b
T io、、*Z re、5gOs   1. 0重量
%Nb。
As shown in Table 1, as a dielectric ceramic composition, P b
T io, *Z re, 5gOs 1. 0% by weight Nb.

0、を用い、副成分としてxPbo・yGeotガラス
粉末を添加してなる原料を用い、4種の成形体を作成し
た。得られた各成形体に、Ag粉とエチルセルロースか
らなるバインダを溶剤であるブチルアセテートで溶解し
た有機ビヒクルとを混練してなる、焼き付は用の電極ペ
ーストを印刷し、成形体および電極ペーストを一体焼成
して誘電体磁器を用いたセラミック電子部品を得た。こ
のようにして得られたセラミック電子部品の特性を第1
表に併せて示す。
Four types of molded bodies were created using a raw material obtained by adding xPbo/yGeot glass powder as a subcomponent. An electrode paste for baking, which is made by kneading Ag powder and an organic vehicle in which a binder made of ethyl cellulose is dissolved in butyl acetate as a solvent, is printed on each of the obtained molded bodies, and the molded bodies and the electrode paste are printed. A ceramic electronic component using dielectric porcelain was obtained by integral firing. The characteristics of the ceramic electronic component obtained in this way were
It is also shown in the table.

また、上記と同一の誘電体磁器材料およびガラス粉末を
用い、従来法すなわち電極の焼き付けを別工程で行う方
法により得た電子部品の特性も従来例1〜5として、そ
の特性を第1表に併せて示す。
In addition, the characteristics of electronic components obtained using the same dielectric ceramic material and glass powder as above and using the conventional method, that is, the method of baking the electrodes in a separate process, are also listed as Conventional Examples 1 to 5, and the characteristics are shown in Table 1. Also shown.

第1表 第2表に示すように、誘電体磁器組成物として、0.0
5Pb (Sn+z* Sb+zt )Os  O,4
7PbT10.0.48PbZros  O,7重量%
M n Oxを用い、実施例Iと同様にしてセラミック
電子部品(番号5〜8)を得た。異なるのは、上記誘電
体磁器材料のほか、成形をプレス成形ではなくシート成
形により行ったことである。
As shown in Table 1 and Table 2, as a dielectric ceramic composition, 0.0
5Pb (Sn+z* Sb+zt)Os O,4
7PbT10.0.48PbZrosO, 7% by weight
Ceramic electronic components (numbers 5 to 8) were obtained in the same manner as in Example I using M n Ox. The difference is that in addition to the dielectric ceramic material mentioned above, the molding was performed by sheet molding instead of press molding.

得られたセラミック電子部品の電気特性を第2表に併せ
て示す。
The electrical properties of the obtained ceramic electronic component are also shown in Table 2.

また、第2表においても、従来法により得たセラミック
電子部品についての組成および特性を従来例6〜10と
して示す。
Table 2 also shows the compositions and characteristics of ceramic electronic components obtained by conventional methods as Conventional Examples 6 to 10.

(以下余白) 第2表 第3表に示すように、誘電体磁器材料として、0・05
Pb(Mn+zsNbtz、)Os  0.45PbT
iOs  O,50Pbzno3を用い、実施例■と同
様にして成形体を焼成してセラミック電子部品を得た(
番号9〜13)、得られたセラミック電子部品の電気的
特性を第3表に併せて示す。
(Left below) As shown in Table 2 and Table 3, as a dielectric porcelain material, 0.05
Pb(Mn+zsNbtz,)Os 0.45PbT
Using iOsO,50Pbzno3, a molded body was fired in the same manner as in Example 2 to obtain a ceramic electronic component (
Nos. 9 to 13), the electrical properties of the obtained ceramic electronic components are also shown in Table 3.

また、従来法により同一材料で構成したセラミック電子
部品についての組成および特性についても第3表に併せ
て示す。
Table 3 also shows the compositions and characteristics of ceramic electronic components constructed using the same materials using conventional methods.

第3表 第4表に示すように、誘電体磁器材料として、P b@
1sL as1*T i Os −0,7重量%MnO
3を用い、実施例■と同様にしてセラミック電子部品を
得た(番号14〜17)、但し、この実施例では、成形
は押し出し成形により行った。得られたセラミック電子
部品の電気的特性を第4表に併せて示す。
As shown in Table 3 and Table 4, P b@
1sL as1*T i Os -0.7% by weight MnO
Ceramic electronic parts (Nos. 14 to 17) were obtained in the same manner as in Example (1) using No. 3. However, in this example, the molding was performed by extrusion molding. The electrical properties of the obtained ceramic electronic component are also shown in Table 4.

また、従来法を用いて同一材料で構成したセラミック電
子部品の組成および特性についても第4表に併せて示す
Table 4 also shows the compositions and characteristics of ceramic electronic components made of the same material using the conventional method.

(以下余白) 第4表 誘電体磁器組成物として第5表に示す4種の材料を用い
、かつ副成分としてPb−B−3t系ガラスまたはNa
−B−3i系ガラスを用い、第5表に示す割合で混合し
てなる材料を用いて実施例Iと同様にして成形し、焼結
を行ってセラミック電子部品を得た。得られたセラミッ
ク電子部品の電気的特性を併せて示す。
(Left space below) Table 4 Dielectric ceramic composition using the four materials shown in Table 5, and Pb-B-3t glass or Na as a subcomponent.
A ceramic electronic component was obtained by molding and sintering in the same manner as in Example I using -B-3i glass mixed in the proportions shown in Table 5. The electrical characteristics of the obtained ceramic electronic component are also shown.

なお、従来法により、同一材料を用いて得たセラミック
電子部品の組成および電気的特性を第6表に併せて示す
Table 6 also shows the composition and electrical properties of ceramic electronic components obtained using the same materials by the conventional method.

第5表 (以下余白) 第6表 第5〜第6表において、誘電体磁器組成物で、■■■■
は、次の組成を表す。
Table 5 (blank below) Table 6 In Tables 5 and 6, in the dielectric porcelain composition, ■■■■
represents the following composition:

■; P bT is、4sZ re、5xos −1
,0重量%b2O3 ■i 0.05Pb (Sn+zx sbl/1 )O
s−0,47PbTiOs  O,48PbZro、−
0,7重量%M n Ox ■; 0. 05 P b (Mn+zs N bgz
3) Os−′3゛9 0、 45PbTiOi   O,5PbZrOs■i
 P bo、ssL ae、+oT i Os  O,
7重量%M n Os また、−第5〜第6表において、*1および*2は、以
下の組成を示すものである。
■; P bT is, 4sZ re, 5xos −1
,0wt%b2O3 ■i 0.05Pb (Sn+zx sbl/1)O
s-0,47PbTiOs O,48PbZro,-
0.7% by weight M n Ox ■; 0. 05 P b (Mn+zs N bgz
3) Os-'3゛9 0, 45PbTiOi O,5PbZrOs■i
P bo, ssL ae, +oT i Os O,
7% by weight M n Os Also, in Tables 5 and 6, *1 and *2 indicate the following compositions.

* 1 ; P b−B−3iは68モル%PbO21
5モル%B、Oゴ、4モル%Stow、並びに13モル
%のA1.ox 、アルカリ金属酸化物またはアルカリ
土類酸化物等からなる組成を有する。
*1; Pb-B-3i is 68 mol% PbO21
5 mol% B, Ogo, 4 mol% Stow, and 13 mol% A1. ox, an alkali metal oxide or an alkaline earth oxide.

*2;Na・B−3iは11モル%Na、0112モル
%BxOs、72モル%Sin。
*2; Na.B-3i is 11 mol% Na, 0112 mol% BxOs, 72 mol% Sin.

、並びに5モル%のAItxOs、アルカリ金属酸化物
またはアルカリ土類酸化物等からなる組成を有する。
, and 5 mol % of AItxOs, an alkali metal oxide or an alkaline earth oxide.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明によれば、副成分としてP b 
O・G e Oを系、’PbO・Bt Os  ・5t
O1系またはNa、O・Bt O,・Slow系ガラス
が添加されて焼結温度が低められた誘電体磁器組成物成
形体に、電極ペーストを塗布することにより、電極ペー
ストおよび磁器組成物成形体を一体同時焼成するだけで
電極の形成されたセラミック電子部品を得ることができ
る。よって、従来例のように誘電体磁器組成物成形体を
焼成した後に電極を焼き付ける工程を別途実施する必要
がないため、電子部品の製造工程を大幅に簡略化するこ
とができる。
As described above, according to the present invention, P b as a subcomponent
O・G e O system, 'PbO・Bt Os ・5t
By applying electrode paste to a dielectric ceramic composition molded body to which O1-based or Na, O・Bt O,・Slow-based glass is added and the sintering temperature is lowered, the electrode paste and the ceramic composition molded object are produced. Ceramic electronic components with electrodes can be obtained by simply co-firing them together. Therefore, unlike the conventional example, there is no need to carry out a separate step of baking the electrode after baking the dielectric ceramic composition molded body, so the manufacturing process of the electronic component can be greatly simplified.

本発明の製造方法は、単板コンデンサ、積層コンデンサ
、圧電ブザー、圧電フィルタ、積層型圧電素子、焦電素
子等の種りの電子部品の製造に用いることが可能なもの
である。
The manufacturing method of the present invention can be used to manufacture various electronic components such as single-plate capacitors, multilayer capacitors, piezoelectric buzzers, piezoelectric filters, multilayer piezoelectric elements, and pyroelectric elements.

Claims (2)

【特許請求の範囲】[Claims] (1)誘電体磁器組成物を主成分とし、副成分としてP
bO・GeO_2系、PbO・B_2O_3・SiO_
2系またはNa_2O・B_2O_3・SiO_2系ガ
ラスを添加してなる誘電体磁器組成物を成形して成形体
を得る工程と、 前記成形体に電極ペーストを付与する工程と、前記成形
体および電極ペーストを同時焼成する工程とを備えるこ
とを特徴とする、セラミック電子部品の製造方法。
(1) The main component is a dielectric ceramic composition, and the subcomponent is P.
bO・GeO_2 series, PbO・B_2O_3・SiO_
A step of molding a dielectric ceramic composition formed by adding 2-based or Na_2O・B_2O_3・SiO_2-based glass to obtain a molded body; a step of applying an electrode paste to the molded body; and a step of applying an electrode paste to the molded body and the electrode paste. A method for manufacturing a ceramic electronic component, comprising a step of simultaneous firing.
(2)前記副成分ガラスとして、一般式xPbO−yG
eO_2(但し、x=1〜6,y=1〜3)で示される
ものを用い、主成分の0.01〜30重量%添加する、
特許請求の範囲第1項記載のセラミック電子部品の製造
方法。
(2) As the subcomponent glass, the general formula xPbO-yG
Using eO_2 (where x = 1 to 6, y = 1 to 3), adding 0.01 to 30% by weight of the main component,
A method for manufacturing a ceramic electronic component according to claim 1.
JP62335142A 1987-12-28 1987-12-28 Manufacture of ceramic electronic component Pending JPH01175218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62335142A JPH01175218A (en) 1987-12-28 1987-12-28 Manufacture of ceramic electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62335142A JPH01175218A (en) 1987-12-28 1987-12-28 Manufacture of ceramic electronic component

Publications (1)

Publication Number Publication Date
JPH01175218A true JPH01175218A (en) 1989-07-11

Family

ID=18285229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62335142A Pending JPH01175218A (en) 1987-12-28 1987-12-28 Manufacture of ceramic electronic component

Country Status (1)

Country Link
JP (1) JPH01175218A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047813A (en) * 1990-04-25 1992-01-13 Toko Inc Manufacture of laminated electronic component
JPH0415906A (en) * 1990-05-09 1992-01-21 Toko Inc Manufacture of laminated electronic parts
JPH0494517A (en) * 1990-08-10 1992-03-26 Toko Inc Manufacture of laminated electronic component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047813A (en) * 1990-04-25 1992-01-13 Toko Inc Manufacture of laminated electronic component
JPH0415906A (en) * 1990-05-09 1992-01-21 Toko Inc Manufacture of laminated electronic parts
JPH0614495B2 (en) * 1990-05-09 1994-02-23 東光株式会社 Method for manufacturing laminated electronic component
JPH0494517A (en) * 1990-08-10 1992-03-26 Toko Inc Manufacture of laminated electronic component

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