JP7232978B2 - Method for Cooling Infrared Sensors and Bolometer Infrared Receivers of Infrared Sensors - Google Patents

Description

The present disclosure relates to infrared sensors and methods of cooling bolometric infrared receivers of infrared sensors.

Patent Literature 1 discloses a structure in which a beam is used to separate a thermal infrared light receiving section from a base substrate. The purpose of this structure is to thermally insulate the infrared receiver from the base substrate. In the thermal infrared sensor having this structure, the higher the thermal insulation performance of the beam, the higher the infrared detection sensitivity.

Patent Literature 2 and Non-Patent Literature 1 disclose a periodic structure composed of a plurality of through-holes that reduces the thermal conductivity of thin films. In this periodic structure, the through-holes are regularly arranged in the thin film in plan view with a period within the order of nanometers (in the range of 1 nm to 1000 nm). This periodic structure is a kind of phononic crystal structure. This type of phononic crystal structure is a periodic structure in which the minimum unit constituting the array of through-holes is a unit lattice.

The thermal conductivity of thin films can be reduced by porosification, for example, as disclosed in US Pat. This is because the voids introduced into the thin film by porosity decrease the thermal conductivity of the thin film. On the other hand, according to the phononic crystal structure, the thermal conductivity of the base material itself that constitutes the thin film can be reduced. For this reason, a further reduction in thermal conductivity is expected as compared to mere porosity.

In insulators and semiconductors, heat is primarily carried by lattice vibrations called phonons. The thermal conductivity of a material composed of an insulator or a semiconductor is determined by the phonon dispersion relation of the material. The phonon dispersion relation means the relation between frequency and wave number, or band structure. In insulators and semiconductors, heat-carrying phonons span a wide frequency band from 100 GHz to 10 THz. This frequency band is the thermal band. The thermal conductivity of a material is determined by the dispersion relation of phonons in the thermal zone.

According to the above-described phononic crystal structure, the periodic structure of the through-holes can control the phonon dispersion relation of the material. That is, according to the phononic crystal structure, it is possible to control the thermal conductivity itself of the material, for example, the base material of the thin film. Among other things, the formation of a phononic bandgap (PBG) by the phononic crystal structure can greatly reduce the thermal conductivity of the material. Phonons cannot exist in the PBG. Therefore, the PBG located in the heat zone can become a heat conduction gap. Also in frequency bands other than PBG, the slope of the phonon dispersion curve is reduced by PBG. Reducing the tilt reduces the phonon group velocity and reduces the heat transfer velocity. These points greatly contribute to the reduction of the thermal conductivity of the material.

The detection sensitivity of the infrared sensor can be improved by introducing such a phononic crystal structure into the beam supporting the infrared light receiving section.

JP 2012-63359 A U.S. Patent Application Publication No. 2017/0069818

M. Nomura et al. , "Impeded thermal transport in Simultaneous scale hierarchical architectures with phononic crystal nanostructures", Physical Review B 91, 205422 (2015).

By increasing the heat insulation performance of the beam, the detection sensitivity of the infrared sensor can be improved. However, at the same time, there is a problem that the temperature change of the infrared light receiving section is slowed down, and the response speed of the infrared sensor is lowered.

Therefore, as means for improving the response speed of the infrared sensor, for example, in the infrared sensor disclosed in Patent Document 1, a beam-shaped Peltier element connected to the base substrate is arranged so as to be in contact with the infrared light receiving portion. can be considered. By using the Peltier element to locally absorb heat from the infrared light receiving section, the temperature of the infrared light receiving section, which has risen due to the incidence of infrared rays, is reduced. However, the introduction of the Peltier element increases the thermal conductance between the infrared light receiving section and the base substrate, resulting in a decrease in infrared detection sensitivity.

Moreover, when a Peltier element having a beam shape is monolithically produced on a semiconductor substrate, it is necessary to use a semiconductor material used in the silicon process. In this case, it is difficult to obtain a sufficient endothermic function because the normally used semiconductor materials (eg, Si and SiGe) have a low Peltier effect.

An object of the present disclosure is to provide an infrared sensor capable of achieving both excellent detection sensitivity and excellent response speed, and a method for cooling the infrared light receiving section of the infrared sensor.

The infrared sensor of the present disclosure is
a base substrate having a recess;
bolometer infrared receiver and Peltier element,
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a first bolometer beam electrically connected to the variable resistance layer; and a second bolometer beam electrically connected to the variable resistance layer;
is equipped with
The Peltier element is sandwiched between the bolometer infrared light receiving portion and the recess,
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
said Peltier element comprising a first Peltier beam made of a p-type semiconductor material and a second Peltier beam made of an n-type semiconductor material;
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
one end of the first bolometer beam, one end of the second bolometer beam, one end of the first Peltier beam, and one end of the second Peltier beam are connected to the base substrate;
The bolometer infrared light receiving unit, the Peltier element, the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam are suspended above the base substrate,
The first bolometer beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The second bolometer beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The Peltier first beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes,
The second Peltier beam has a fourth phononic crystal structure composed of a plurality of regularly arranged through holes.

In the infrared sensor according to the present disclosure, each of the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam separating the variable resistance layer and the base substrate comprises a phononic crystal structure. As a result, thermal conductance between the variable resistance layer and the base substrate is significantly suppressed. As a result, excellent infrared detection sensitivity can be realized.

Furthermore, since each of the first Peltier beam and the second Peltier beam functioning as a Peltier element includes a phononic crystal, a semiconductor material with a low Peltier effect (eg, Si or SiGe) used in the silicon process is used as the first Peltier beam and the second Peltier beam. Even when it is used as the material for the second Peltier beam, it is possible to sufficiently lower the temperature of the bolometer infrared light receiving portion, which rises due to the absorption of infrared rays. The reason why the Peltier effect can be enhanced by the configuration of the present disclosure is that by introducing a phononic crystal structure into each of the first Peltier beam and the second Peltier beam, the electrical conductivity of the material constituting the first Peltier beam and the second Peltier beam is reduced. This is because only the thermal conductivity can be reduced while the modulus remains unchanged. That is, in the phononic crystal structure, the electrical conductivity, which depends on electron transport, does not change, but only the thermal conductivity, which depends on phonon transport. Due to the excellent Peltier effect, the bolometer infrared receiver can be cooled in a short period of time. Thereby, the response speed of the infrared sensor can be improved.

The present disclosure provides an infrared sensor capable of achieving both excellent detection sensitivity and excellent response speed, and a method for cooling the bolometer infrared receiver of the infrared sensor.

FIG. 1A shows a schematic plan view of an example of the infrared sensor 1A of Embodiment 1. FIG. FIG. 1B shows a schematic diagram of a cross section of the infrared sensor 1A of Embodiment 1 taken along line 1B-1B of FIG. 1A. FIG. 1C shows a schematic diagram of a cross section of the infrared sensor 1A of Embodiment 1 taken along line 1C-1C of FIG. 1A. FIG. 1D shows a cross-sectional view of another example of the infrared sensor 1A of Embodiment 1. FIG. FIG. 2 shows a schematic plan view of another example of the infrared sensor 1A of the first embodiment. FIG. 3 shows a schematic plan view of still another example of the infrared sensor 1A of the first embodiment. FIG. 4A shows a schematic diagram of an example layout of the interface 103 on the resistance change layer 201 in the infrared sensor 1A of the first embodiment. FIG. 4B shows a schematic diagram of another example of a layout diagram of the interface 103 on the resistance change layer 201 in the infrared sensor 1A of the first embodiment. FIG. 5A shows a schematic diagram of still another example of a layout diagram of the interface 103 on the resistance change layer 201 in the infrared sensor 1A of the first embodiment. FIG. 5B shows a schematic diagram of yet another example of a layout diagram of the interface 103 on the resistance change layer 201 in the infrared sensor 1A of Embodiment 1 of the present disclosure. FIG. 6A shows a schematic diagram of an example of a unit cell of a periodic structure forming a phononic crystal structure. FIG. 6B shows a schematic diagram of another example of the unit cell of the periodic structure that constitutes the phononic crystal structure. FIG. 6C shows a schematic diagram of still another example of the unit cell of the periodic structure that constitutes the phononic crystal structure. FIG. 6D shows a schematic diagram of still another example of the unit cell of the periodic structure that constitutes the phononic crystal structure. FIG. 7A shows an example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. FIG. 7B is an enlarged view of region 7B of the phononic crystal structure of FIG. 7A. FIG. 8A shows another example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. FIG. 8B shows an enlarged view of the phononic domain 91 of FIG. 8A. FIG. 8C shows an enlarged view of the phononic domain 92 of FIG. 8A. FIG. 8D shows an enlarged view of the phononic domain 93 of FIG. 8A. FIG. 9A shows yet another example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. FIG. 9B shows an enlarged view of the second periodic structure 26a of FIG. 9A. FIG. 9C shows an enlarged view of the second periodic structure 26b of FIG. 9A. FIG. 10A shows yet another example of a schematic enlarged view near the infrared light receiving section 12A and the beam 101b in the infrared sensor 1A of the first embodiment. FIG. 10B shows an enlarged view of the micro-periodic structure 27a of FIG. 10A. FIG. 10C shows an enlarged view of the micro-periodic structure 27b of FIG. 10A. FIG. 11 shows an enlarged view of a beam for explaining that the subphononic domain 28a functions like one large through-hole for phonons with long wavelengths in the infrared sensor 1A of Embodiment 1. . FIG. 12A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 12B shows a schematic diagram of a cross section taken along line 12B-12B of FIG. 12A. FIG. 13A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 13B shows a schematic diagram of a cross section taken along line 13B-13B of FIG. 13A. FIG. 13C shows a schematic diagram of a cross section taken along line 13C-13C of FIG. 13A. FIG. 13D shows an enlarged view of region 1011b in which a plurality of through holes 18 are formed. FIG. 14A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 14B shows a schematic diagram of a cross section taken along line 14B-14B of FIG. 14A. FIG. 14C shows a schematic diagram of a cross section taken along line 14C-14C of FIG. 14A. FIG. 14D shows a schematic diagram of a cross section taken along line 14D-14D of FIG. 14A. FIG. 14E shows a schematic diagram of a cross section taken along line 14E-14E of FIG. 14A. FIG. 15A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 15B shows a schematic diagram of a cross section taken along line 15B-15B of FIG. 15A. FIG. 15C shows a schematic diagram of a cross section taken along line 15C-15C of FIG. 15A. FIG. 16A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 16B shows a schematic diagram of a cross section taken along line 16B-16B of FIG. 16A. FIG. 16C shows a schematic diagram of a cross section taken along line 16C-16C of FIG. 16A. FIG. 17A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1A of Embodiment 1. FIG. FIG. 17B shows a schematic diagram of a cross section taken along line 17B-17B of FIG. 17A. FIG. 17C shows a schematic diagram of a cross section taken along line 17C-17C of FIG. 17A. FIG. 18A shows a schematic plan view of an example of the infrared sensor 1D of Embodiment 2. FIG. FIG. 18B shows a schematic diagram of a cross section of the infrared sensor 1D of Embodiment 2 along line 18B-18B of FIG. 18A. FIG. 18C shows a schematic diagram of a cross section of the infrared sensor 1D of Embodiment 2 taken along line 18C-18C of FIG. 18A. FIG. 18D shows a cross-sectional view of another example of the infrared sensor 1D of Embodiment 2. FIG. FIG. 19 shows a schematic plan view of another example of the infrared sensor 1D of the second embodiment. FIG. 20 shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 21A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 21B shows a schematic diagram of a cross section taken along line 21B-21B of FIG. 21A. FIG. 21C shows a schematic diagram of a cross section taken along line 21C-21C of FIG. 21A. FIG. 22A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 22B shows a schematic diagram of a cross section taken along line 22B-22B of FIG. 22A. FIG. 22C shows a schematic diagram of a cross section taken along line 22C-22C of FIG. 22A. FIG. 23A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 23B shows a schematic diagram of a cross section taken along line 23B-23B of FIG. 23A. FIG. 23C shows a schematic diagram of a cross section taken along line 23C-23C of FIG. 23A. FIG. 24A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 24B shows a schematic diagram of a cross section taken along line 24B-24B of FIG. 24A. FIG. 25A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 25B shows a schematic diagram of a cross section taken along line 25B-25B of FIG. 25A. FIG. 25C shows a schematic diagram of a cross section taken along line 25C-25C of FIG. 25A. FIG. 26A shows a schematic plan view for explaining an example of a method for manufacturing the infrared sensor 1D of Embodiment 2. FIG. FIG. 26B shows a schematic diagram of a cross section taken along line 26B-26B of FIG. 26A. FIG. 26C shows a schematic diagram of a cross section taken along line 26C-26C of FIG. 26A. FIG. 27A shows a schematic plan view of an example of the infrared sensor 1F of Embodiment 3. FIG. FIG. 27B shows a schematic diagram of a cross section of the infrared sensor 1F of Embodiment 3 taken along line 27B-27B of FIG. 27A. FIG. 27C shows a schematic diagram of a cross section of the infrared sensor 1F of Embodiment 3 taken along line 27C-27C of FIG. 27A. FIG. 27D shows a cross-sectional view of another example of the infrared sensor 1F of Embodiment 3. FIG. FIG. 28 shows a schematic plan view of another example of the infrared sensor 1F of the third embodiment. FIG. 29 shows a schematic plan view of still another example of the infrared sensor 1F of the third embodiment. FIG. 30A shows a schematic plan view of an example of the infrared sensor 1I of Embodiment 4. FIG. FIG. 30B shows a schematic cross-sectional view of the infrared sensor 1I of Embodiment 4 taken along line 30B-30B of FIG. 30A. FIG. 30C shows a schematic diagram of a cross section of the infrared sensor 1I of Embodiment 4 taken along line 30C-30C of FIG. 30A. FIG. 30D shows a cross-sectional view of another example of the infrared sensor 1I of Embodiment 4. FIG. FIG. 31A shows a schematic plan view of another example of the infrared sensor 1I of Embodiment 4. FIG. FIG. 31B shows a schematic diagram of a cross section of the infrared sensor 1I along line 31B-31B of FIG. 31A. 32A is a graph showing the results of a time response test when a current is passed through beams 102a and 102b of the infrared sensor according to Example 1. FIG. FIG. 32B is an enlarged view of portion B enclosed by a dotted line in FIG. 32A. 32C is a graph showing the results of a time response test when no current was applied to beams 102a and 102b of the infrared sensor according to Example 1. FIG. FIG. 32D is an enlarged view of portion D enclosed by a dotted line in FIG. 32C. 32E is a graph showing the results of a time response test when no current was applied to beams 102a and 102b of the infrared sensor according to Comparative Example 1. FIG.

Embodiments of the present disclosure will be described below with reference to the drawings. JP 2017-223644, US Patent Application 2015/497353 corresponding to JP 2017-223644, and Chinese Application 201710274259.9 are incorporated herein by reference.

(Embodiment 1)
An infrared sensor 1A of Embodiment 1 is shown in FIGS. 1A-1C. FIG. 1B shows cross-section 1B-1B of infrared sensor 1A of FIG. 1A. FIG. 1C shows cross-section 1C-1C of infrared sensor 1A of FIG. 1A. The infrared sensor 1A is a bolometer infrared sensor.

The infrared sensor 1A includes a base substrate 11 having a concave portion 32, a bolometer infrared light receiving portion 12A, and a Peltier element 12P. The infrared sensor 1A also includes electrode pads 13a, 13b, 15a, 15b and second wirings 14a, 14b, 14c, 14d. Electrode pads 13 a , 13 b , 15 a , 15 b and second wirings 14 a , 14 b , 14 c , 14 d are provided on base substrate 11 .

The bolometer infrared receiver 12A includes a variable resistance layer 201 whose resistance changes by absorbing infrared rays, a beam 101a electrically connected to the variable resistance layer 201, and a beam 101b electrically connected to the variable resistance layer 201. Prepare. The beams 101a and 101b are also referred to as a first bolometer beam and a second bolometer beam, respectively. The bolometer infrared light receiving section 12A also includes an insulating film 202 formed on the resistance change layer 201 and an infrared absorbing layer 203 formed on the insulating film 202 . The bolometer infrared light receiving portion 12A has a film shape. The surface on which the bolometer infrared light receiving section 12A is provided is referred to as the surface on the front side of the bolometer infrared light receiving section 12A. Also, the surface on which the resistance change layer 201 is provided is referred to as the back surface of the bolometer infrared light receiving section 12A.

Peltier element 12P comprises a beam 102a made of p-type semiconductor material and a beam 102b made of n-type semiconductor material. The beams 102a and 102b are also referred to as a first Peltier beam and a second Peltier beam, respectively. Also, the Peltier element 12</b>P includes a first wiring 16 and an insulating film 17 .

As shown in FIGS. 1A and 1B, one end of beam 101 a and one end of beam 101 b are connected to base substrate 11 . Also, the other end of the beam 101 a and the other end of the beam 101 b are connected to the resistance change layer 201 . Moreover, the beams 101a and 101b are electrically connected to the second wirings 14a and 14b, respectively. The second wirings 14a, 14b are electrically connected to electrode pads 13a, 13b, respectively.

As shown in FIGS. 1A and 1C, one end of beam 102 a and one end of beam 102 b are connected to base substrate 11 . The other end of the beam 102a is connected to the other end of the beam 102b to form an interface 103. As shown in FIG. A first wiring 16 for electrically connecting the beams 102 a and 102 b is formed on the beams 102 a and 102 b so as to straddle the interface 103 . Furthermore, the insulating film 17 is formed on the first wiring 16, the beams 102a, and the beams 102b so as to cover the first wiring 16. As shown in FIG. Moreover, the beams 102a and 102b are electrically connected to the second wirings 14c and 14d, respectively. The second wirings 14c and 14d are electrically connected to the electrode pads 15a and 15b, respectively.

As shown in FIGS. 1A to 1C, the base substrate 11 has a concave portion 32 on its upper surface 31 provided with the infrared light receiving portion 12A.

In plan view, the area of the concave portion 32 is larger than the area of the infrared light receiving portion 12A. Further, the infrared light receiving portion 12A is surrounded by the outer edge of the concave portion 32 in plan view. In this specification, "planar view" means viewing an object from a direction perpendicular to the main surface of the object. Also, the "principal surface" means the surface having the largest area. In this embodiment, the main surface is the top surface 31 .

The reason why the base substrate 11 has the concave portion 32 is to make it difficult for the heat accumulated in the resistance change layer 201, the insulating film 202, and the infrared absorption layer 203 to escape. As is well known in the technical field, making it difficult for heat to escape in this way improves the detection sensitivity of the infrared sensor.

As shown in FIG. 1B, recess 32 is positioned between infrared light receiving portion 12A and beams 101a and 101b and base substrate 11. As shown in FIG. As shown in FIG. 1C, the Peltier element 12P is sandwiched between the bolometer infrared receiver 12A and the recess 32. As shown in FIG. Further, the Peltier element 12P is in contact with the back surface of the bolometer infrared light receiving section 12A in order to cool the bolometer infrared light receiving section 12A. Specifically, the insulating film 17 is in contact with the resistance change layer 201 . The interface 103 is sandwiched between the variable resistance layer 201 and the recess 32 . Insulating film 17 is sandwiched between resistance change layer 201 and beams 102a and 102b. Bolometer infrared light receiving portion 12A, Peltier element 12P, beams 101a, 101b, 102a, and 102b are suspended above base substrate 11. As shown in FIG. As is well known in the art, this suspension of bolometer infrared receiver 12A improves the detection sensitivity of the infrared sensor.

The beams 101 a and 101 b are used to read detection signals of infrared rays incident on the infrared absorption layer 203 .

The beams 101a and 101b are made of a conductive material. Conductive materials are, for example, metals and semiconductors. More preferably, the electrically conductive material is a semiconductor. This is because the heat-carrying medium in metals is primarily free electrons, not phonons. Semiconductors are, for example, single element semiconductors such as Si or Ge, compound semiconductors such as SiN, SiC, SiGe, GaAs _, InAs, InSb, InP, GaN, or AlN, as well as _Fe2O3 , _VO2 , _TiO2 , or It is an oxide semiconductor such as _SrTiO3 .

Each of beams 101a and 101b has a phononic crystal structure composed of a plurality of regularly arranged through-holes in order to enhance the heat insulation performance of resistance change layer 201 with respect to base substrate 11 . The phononic crystal structure includes a section 111a between one end of the beam 101a connected to the base substrate 11 in the planar view of the beam 101a and one end of the resistance change layer 201, and a section 111a in the planar view of the beam 101b connected to the base substrate 11. It is desirable to be provided in the section 111b between the one end of 101b and the other end of the variable resistance layer 201 . The details of the phononic crystal structure will be described later.

The beams 102a, 102b constitute a thermocouple and function as a Peltier element 12P. That is, beams 102a and 102b are used to absorb heat generated in infrared light receiving section 12A. Interface 103 corresponds to the cold junction of Peltier element 12P. One of the beams 102a, 102b is made of p-type semiconductor material. The other of beams 102a, 102b is made of n-type semiconductor material. The p-type semiconductor material and the n-type semiconductor material are desirably, for example, silicon-based semiconductor materials (eg, Si or SiGe) used in silicon processes.

The reason why the first wiring 16 is provided on the interface 103 is to facilitate the flow of current between the beams 102a and 102b. Although the Peltier element 12P functions without the first wiring 16, it is desirable that the Peltier element 12P has the first wiring 16. FIG.

Note that, as shown in FIG. 1D, when a Peltier element 12P that does not have an interface 103 is used, the first wiring 16 that electrically connects the beam 102a to the beam 102b is essential. In this case, the first wiring 16 corresponds to the cold junction of the Peltier element 12P. As shown in FIG. 1D, the first wiring 16 is sandwiched between the variable resistance layer 201 and the recess 32 .

As for infrared sensor 1A, it is desirable to have a plurality of interfaces 103 . It is desirable that the plurality of interfaces 103 be distributed in the plane of the resistance change layer 201 . This is because the area where heat is absorbed by the Peltier effect is limited to a local area near the interface 103 . Therefore, in a configuration in which a plurality of interfaces 103 are distributed over the variable resistance layer 201, the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 can be cooled more uniformly. As shown in FIGS. 4A and 4B, in this configuration, when the plane of the resistance change layer 201 is divided into four equal regions, it is preferable that multiple interfaces 103 exist in at least two regions. Note that the first wiring 16, the insulating film 17, the insulating film 202, and the infrared absorption layer 203 are omitted in FIGS. 4A and 4B.

Also, as shown in FIGS. 5A and 5B, when the plane of the infrared light receiving section 12A is divided evenly into a plurality of regions, one interface 103 may be arranged over at least two regions. This configuration enables efficient absorption of heat from the infrared light receiving section 12A . Note that the first wiring 16, the insulating film 17, the insulating film 202, and the infrared absorption layer 203 are omitted in FIGS. 5A and 5B.

Each of beams 102 a and 102 b has a phononic crystal structure composed of a plurality of regularly arranged through-holes in order to enhance the heat insulation performance of resistance change layer 201 with respect to base substrate 11 . The phononic crystal structure includes a section 112a between one end of the beam 102a connected to the base substrate 11 in the planar view of the beam 102a and one end of the resistance change layer 201, and a section 112a in the planar view of the beam 102b connected to the base substrate 11. 102 b and the other end of the variable resistance layer 201 .

Base substrate 11 is typically composed of a semiconductor. A semiconductor is Si, for example. An oxide film may be formed on the upper surface 31 of the base substrate 11 made of Si. The oxide film is, for example, a _SiO2 film.

The variable resistance layer 201 is made of a material with a large temperature coefficient of resistance, such as amorphous Si, vanadium oxide, or platinum. The insulating film 202 is made of SiN, for example. The material of the infrared absorbing layer 203 is preferably metal (eg Ti, Cr, Au, Al, Cu or Ni) or nitride (eg TiN or SiN). In addition to these materials, an oxide (for example, SiO) may be used as the material of the infrared absorption layer 203 .

The first wiring 16 is composed of, for example, a doped semiconductor or metal. The metal is Al, for example.

The second wirings 14a, 14b, 14c, 14d are made of, for example, a doped semiconductor or metal. The metal is Al, for example.

The insulating film 17 is provided to electrically insulate the variable resistance layer 201 from the Peltier element 12P. The insulating film 17 is made of SiN, for example.

The electrode pads 13a, 13b, 15a, 15b are made of Al, for example.

The electrode pads 13a, 13b are electrically connected to a signal processing circuit (not shown) that applies current to the beams 101a, 101b. Note that the signal processing circuit may be provided on the base substrate 11 or may be provided outside the base substrate 11 .

The electrode pads 15a and 15b are electrically connected to a signal processing circuit (not shown) that applies current to the Peltier element 12P. Note that the signal processing circuit may be provided on the base substrate 11 or may be provided outside the base substrate 11 .

The following description relates to the phononic crystal structure possessed by each of the beams 101a, 101b, 102a, 102b. Taking the phononic crystal structure of the beam 101b as an example, details thereof will be described below. This description also applies to beams 101a, 102a, and 102b.

An example of a phononic crystal structure is shown in FIGS. 7A and 7B. FIG. 7A shows an example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. FIG. 7B is an enlarged view of region 7B of the phononic crystal structure of FIG. 7A. The beam 101b is, for example, a thin film having a thickness of 10 nm or more and 500 nm or less. The beam 101b is rectangular in plan view. The direction of the long side of the beam 101b matches the direction connecting the variable resistance layer 201 and the second wiring 14b, that is, the direction of macro heat transfer in the infrared sensor 1A. The beam 101b is provided with a plurality of through holes 18 extending in the thickness direction of the beam 101b. The phononic crystal structure of beam 101b is a two-dimensional phononic crystal structure in which a plurality of through-holes 18 are regularly arranged in the in-plane direction. Thus, the phononic crystal structure has a periodic structure composed of a plurality of through-holes 18 .

A domain, which is a phononic crystal region, is a region having an area of, for example, 25P ² or more in plan view, where P is the period of the arrangement of the plurality of through holes 18 . Here, as shown in FIG. 7B, the period P is defined by the center-to-center distance between adjacent through holes 18 in plan view.

Domains may have areas of at least 25P ² or more to control the phonon dispersion relation through the phononic crystal structure. In a square domain in plan view, an area of 25P ² or more can be secured by setting the period to 5×P or more.

The period P of the arrangement of the through-holes 18 is, for example, 1 nm or more and 300 nm or less. This is because the wavelengths of heat-carrying phonons primarily range from 1 nm to 300 nm. The through-holes 18 arranged in the beams 101a, 101b, 102a, 102b may have different periods or may have the same period.

The shape of the opening of the through-hole 18 shown in FIG. 7B is circular. The diameter D of the plurality of through-holes 18 is represented by a ratio D/P to the period P such that D/P≧0.5, for example. If the ratio D/P<0.5, the porosity in the beam 101b may be excessively reduced, and the thermal conductivity may not be reduced sufficiently. Here, the upper limit of the ratio D/P is, for example, less than 0.9 because the adjacent through holes 18 do not touch each other. The shape of the opening of the through hole 18 may not be circular in plan view. In this case the diameter D is defined by the diameter of an imaginary circle with the same area as the aperture.

Types of the unit lattice 19 configured by a plurality of regularly arranged through holes 18 include, for example, a square lattice (FIG. 6A), a hexagonal lattice (FIG. 6B), a rectangular lattice (FIG. 6C), and a center-of-face length A square lattice (FIG. 6D). However, the type of unit lattice 19 is not limited to these examples. The type of unit cells 19 forming the phononic crystal structure may be one type over the entire beam 101b, or may be several types.

Examples of phononic crystal structures are given below. Taking the phononic crystal structure of the beam 101b as an example, details thereof will be described below. This description also applies to beams 101a, 102a, and 102b.

FIG. 8A shows another example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. In this example, beam 101b includes three phononic domains 21a, 21b, 21c.

Figures 8B, 8C, and 8D show enlarged views of a portion 91 of phononic domain 21a, a portion 92 of phononic domain 21b, and a portion 93 of phononic domain 21c, respectively. As shown in FIG. 8B, the phononic domain 21a has a diameter _D1 and a period _P1 . As shown in FIG. 8C, the phononic domain 21b has a diameter of _D2 and a period of _P2 . As shown in FIG. 8D, the phononic domain 21c has a diameter of _D3 and a period of _P3 . In this example, D ₁ <D ₂ <D ₃ and P ₁ <P ₂ <P ₃ are satisfied. That is, as shown in FIG. 8A, along the direction from the infrared light receiving portion 12A side to the base substrate 11 side, the diameter of the through-holes 18 increases, and the arrangement period of the plurality of through-holes 18 increases. are arranged as follows.

As an example, the period _P1 may be 50 nm or less, the period _P2 may be greater than 50 nm and 150 nm or less, and the period _P3 may be greater than 150 nm and 300 nm or less.

As another example, the period _P1 may be 50 nm or less, the period _P2 may be 100 nm or more and 150 nm or less, and the period _P3 may be 200 nm or more and 300 nm or less.

In the infrared sensor 1A, when infrared rays are received, the temperature of the resistance change layer 201, the insulating film 202, and the infrared absorption layer 203 rises, and a temperature gradient occurs in the beam 101b. At this time, the resistance change layer 201 side has a high temperature, and the base substrate 11 side has a low temperature. Therefore, in the beam 101b, the frequency of the heat band on the resistance change layer 201 side is higher than the frequency of the heat band on the base substrate 11 side. Therefore, the PBG on the resistance change layer 201 side is set to a high frequency and the PBG on the base substrate 11 side is set to a low frequency, that is, the period of the through holes 18 increases from the resistance change layer 201 toward the base substrate 11. By configuring, better heat insulation performance can be obtained.

Note that the greater the number of phononic domains, the higher the heat insulating effect. This is because if the periodic structures of the plurality of through-holes 18 are different between the plurality of phononic domains, the beam 101b has different phonon dispersions, and the phonon group velocity mismatch between the adjacent phononic domains causes the interface This is because thermal resistance occurs. The interval at which adjacent phononic domains are arranged may be periodic or random.

FIG. 9A shows yet another example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. In this example, beam 101b is composed of phononic domains 21a and 21b. Each of the phononic domains 21a and 21b includes a periodic structure different from this periodic structure in the gaps between the plurality of through-holes 18 forming one periodic structure.

Specifically, the phononic domain 21a has a plurality of through-holes 18 with a diameter of _D2 arranged periodically in a first periodic structure 25a in which a plurality of through-holes ₁₈ with a diameter of D1 are arranged at a period of _P1 . It includes a multi-periodic structure consisting of a hierarchical structure in which there is another second periodic structure 26a arranged at P ₂ (see FIG. 9B). The phononic domain 21b has a plurality of through-holes 18 with a diameter _D4 arranged at a period _P4 (FIG. 9C ₎ in a first periodic structure 25b in which a plurality of through-holes 18 with a diameter D3 are arranged at a period _P3 . ) includes a multi-periodic structure consisting of a hierarchical structure in which there is another second periodic structure 26b arranged in . By forming a plurality of periodic structures in one phononic domain in this way, a plurality of PBGs can be formed at once. Furthermore, if a periodic structure is formed so as to sandwich the thermal zone with a plurality of PBGs, the group velocity of phonons in the thermal zone can be reduced by the band edge effect. As a result, a further effect of reducing thermal conductivity is obtained.

Similar to the example shown in FIG. 8A, the example shown in FIG. 9A also has different periodic structures between adjacent phononic domains. Specifically, in the beam 101b, the periods of the first periodic structures 25a and 25b and the second periodic structures 26a and 26b are arranged to increase along the direction from the variable resistance layer 201 side to the base substrate 11 side. be. That is, P ₁ <P ₃ and P ₂ <P ₄ are satisfied. If at least either P ₁ <P ₃ or P ₂ <P ₄ is satisfied, the same effect as the example shown in FIG. 8A can be obtained.

For example, the period _P1 may be 150 nm or less, and the period _P3 may be 200 nm or more and 300 nm or less. For example, the period _P2 may be 150 nm or less, and the period _P4 may be 200 nm or more and 300 nm or less.

Although two types of periodic structures are formed in one phononic domain in FIG. 9A, one phononic domain may have three or more types of periodic structures. For example, a second periodic structure 26a having through-holes having a diameter D2 arranged at a period P2 is present in a first periodic structure 25a having a plurality of through-holes having a diameter D1 arranged at a period P1. A structure in which another third periodic structure exists between the two periodic structures 26a may be used.

FIG. 10A shows yet another example of a schematic enlarged view of the vicinity of the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203, and the beam 101b in the infrared sensor 1A of the first embodiment. In this example, beam 101b is composed of phononic domains 21a and 21b. The phononic domain 21a includes a plurality of micro-periodic structures 27a formed by arranging a plurality of through-holes 18 with a diameter D ₁ at a period P _s1 (see FIG. 10B). The phononic domain 21b includes a plurality of micro-periodic structures 27b formed by arranging a plurality of through-holes 18 with a diameter D ₂ at a period P _s2 (see FIG. 10C). In this example, D ₁ =D ₂ and P _s1 =P _s2 are satisfied. The microperiodic structures 27a, 27b are referred to as subphononic domains 28a, 28b, respectively.

The subphononic domains 28a constituting the phononic domain 21a have a uniform shape and are arranged at intervals of a period _Pm1 to form a macro periodic structure 29a. Similarly, the subphononic domains 28b forming the phononic domain 21b have a uniform shape and are arranged at intervals of a period _Pm2 to form a macro periodic structure 29b. The shape of the subphononic domains 28a and 28b may be circular as long as it is uniform, or may be polygonal such as triangular, quadrangular, or hexagonal.

If the length L _s (see FIG. 10A) of one side of the subphononic domain 28a is sufficiently small relative to the overall shape of the phononic domain 21a, for example, in this embodiment, L _s /width W of beam 101b (See FIG. 10A) When <0.2, for long wavelength phonons, one subphononic domain 28a functions as one large through-hole as shown schematically in FIG. Therefore, the subphononic domain 28a exhibits heat insulating performance as a phononic crystal structure for phonons with long wavelengths. Subphononic domain 28b also has the same effect as subphononic domain 28a.

On the other hand, for phonons with short wavelengths, the micro-periodic structure 27a in the subphononic domain 28a exhibits heat insulation performance. The micro periodic structure 27b also has the same effect as the micro periodic structure 27a.

The period P _s1 of the plurality of through holes 18 forming the micro periodic structure 27a must satisfy P _s1 /L _s ≦0.1. This is because when P _s1 /L _s >0.1, long wavelength phonons are scattered by the micro-periodic structure 27a and do not function as a phononic crystal structure.

By forming a plurality of periodic structures in one phononic domain in this way, a plurality of PBGs can be formed at once. By forming a periodic structure so as to sandwich the thermal zone with a plurality of PBGs, the group velocity of phonons in the thermal zone can be reduced by the band edge effect. As a result, a further effect of reducing thermal conductivity is obtained.

Similar to the example shown in FIG. 8A, the example shown in FIG. 10A also has different periodic structures between adjacent phononic domains. Specifically, in the beam 101b, as shown in FIG. 10A, the macro periodic structures 29a and 29b are arranged so that the period of the macro periodic structures 29a and 29b increases along the direction from the variable resistance layer 201 side to the base substrate 11 side. That is, P _m1 <P _m2 is satisfied. Even if this condition is not satisfied, if P _s1 <P _s2 is satisfied, the same effect as the example shown in FIG. 8A can be obtained.

The respective periods P _s1 and P _s2 of the micro-periodic structures 27a and 27b are preferably within the range of 1 nm to 30 nm. On the other hand, the respective periods P _m1 and P _m2 of the macro-periodic structures 29a and 29b are preferably from 10 nm to 300 nm depending on the respective periods P _s1 and P _s2 of the micro-periodic structures 27a and 27b.

In the micro-periodic structures 27a, 27b forming the subphononic domains 28a, 28b, respectively, a plurality of through-holes corresponding to five or more periods must be aligned. That is, it is necessary to provide five or more through holes 18 . This condition also applies to macroperiodic structures 29a, 29b formed by subphononic domains 28a, 28b, respectively.

The shape of the phononic domains 21a and 21b may be circular or polygonal.

An example of a method for manufacturing the infrared sensor 1A of Embodiment 1 will be described below.

First, a Silicon On Insulator (SOI) wafer 111 is prepared. As shown in FIGS. 12A and 12B, the SOI wafer 111 has a stacked structure consisting of a bottom Si layer 501, a middle SiO ₂ layer 502 and a top Si layer 503. FIG.

Instead of the SOI wafer 111, a sacrificial layer made of polyimide or SiO ₂ was formed on a semiconductor substrate (eg, Si substrate), and a Si thin film or SiGe thin film with a thickness of 10 to 500 nm was formed on the sacrificial layer. A laminated structure may also be used.

Next, as shown in FIGS. 13A to 13C, photolithography and ion implantation are performed to form a region 1011a that will be the beam 101a, a region 1011b that will be the beam 101b, a region 1021a that will be the beam 102a, and a region that will be the beam 102b. 1021b is doped with ions. At this time, different doping processes are performed on the regions 1021a and 1021b. Note that the regions 1011a, 1011b, 1021a, and 1021b are included in the region R having a rectangular outer shape.

The SOI wafer 111 is then subjected to heat treatment. This activates the ions implanted in the doping process.

Next, a plurality of through holes 18 are periodically formed in the regions 1011a, 1011b, 1021a, 102 1 b. As an example, an enlarged view of a region 1011b in which a plurality of through holes 18 are formed is shown in FIG. 13D. 13A to 13C, illustration of the through hole 18 is omitted. Electron beam lithography is used to fabricate through holes having a periodic structure of 100 nm to 300 nm. Block copolymer lithography is used to fabricate through holes having a periodic structure of 1 nm to 100 nm. In this way a phononic crystal structure is formed.

Next, as shown in FIGS. 14A to 14E, photolithography and etching are used to remove the Si layer 503 in region R (FIG. 13A) excluding regions 1011a, 1011b, 1021a, and 1021b. 102a, 102b are formed.

Next, as shown in FIGS. 15A to 15C, photolithography, etching, and known thin film formation methods (eg, sputtering, vapor deposition, or chemical vapor deposition (CVD)) are used to form the second wiring 14a. , 14b, 14c, 14d and electrode pads 13a, 13b, 15a, 15b are formed. In parallel with this, a first wiring 16 that electrically connects the beams 102a and 102b is formed using a similar technique. Then, an insulating film 17 made of SiN is formed so as to cover the first wiring 16 by photolithography and a known thin film formation method.

Next, as shown in FIGS. 16A to 16C, a variable resistance layer 201, an insulating film 202, and an infrared absorption layer 203 are laminated by photolithography and a known thin film formation method to form an infrared light receiving section 12A. When the infrared absorbing layer 203 made of Ti, TiN, or SiN is used, a protective film of Si may be further formed on the infrared absorbing layer 203 . This is to protect the infrared absorbing layer 203 from vapor-phase hydrofluoric acid etching in the next step.

Finally, as shown in FIGS. 17A-17C, the middle SiO ₂ layer 502 of the SOI wafer 111 is partially removed by vapor-phase hydrofluoric acid etching.

As described above, the infrared sensor 1A according to the first embodiment is produced.

The operation of the infrared sensor 1A of Embodiment 1 will be described below. The operation is divided into two steps.

At the first stage, the intensity of infrared rays incident on the infrared absorption layer 203 is measured via the beams 101a and 101b. Specifically, first, the signal processing circuit applies a constant voltage to the beams 101a and 101b via the electrode pads 13a and 13b and the second wirings 14a and 14b, and the amount of current flowing through the resistance change layer 201 is measured by the signal processing circuit. monitored by Next, when infrared rays are incident on the infrared absorption layer 203 , the infrared rays are absorbed by the infrared absorption layer 203 . As a result, the temperature of the infrared absorption layer 203, the insulating film 202 in thermal contact with the infrared absorption layer 203, and the resistance change layer 201 are increased. As a result, the electrical resistance of the resistance change layer 201 changes according to the temperature change of the resistance change layer 201 . A signal processing circuit measures a change in the amount of current accompanying a change in the electrical resistance of the resistance change layer 201 at this time, and calculates the intensity of the infrared rays.

As will be described later, each of the beams 101a, 101b, 102a, 102b of the infrared sensor according to Example 1 has a phononic crystal structure, and the infrared sensor according to Example 1 has excellent detection sensitivity (see FIG. 32A). On the other hand, each of the beams 101a, 101b, 102a, and 102b of the infrared sensor according to Comparative Example 1 does not have a phononic crystal structure, and its detection sensitivity is inferior to that of the infrared sensor according to Example 1 (see FIG. 32E). . The vertical axis of the graph shown in FIG. 32A indicates current values measured in the signal processing circuit. The higher the current value, the higher the detection sensitivity. Thus, the detection sensitivity of the infrared sensor 1A can be increased by providing the beams 101a, 101b, 102a, and 102b with a phononic crystal structure to improve their heat insulation performance.

Next, the process moves to the second stage.

In the second stage, the resistance change layer 201, the insulating film 202, and the infrared absorption layer 203 are cooled using the Peltier element 12P, and the resistance change layer 201, the insulation film 202, and the infrared absorption layer 201, which rise with the incidence of the infrared rays. The temperature of 203 is returned to ambient temperature. In order to cool the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203, the signal processing circuit applies a pulsed current to the beams 102a and 102b via the electrode pads 15a and 15b and the second wirings 14c and 14d. applied. As a result, the resistance change layer 201, the insulating film 202, and the infrared absorption layer 203 are cooled by the Peltier effect. This makes it possible to instantly cool the temperature of the infrared light receiving section 12A to the environmental temperature. As will be described later, by applying a current to the Peltier element 12P of the infrared sensor according to Example 1 after blocking the infrared rays, the fall time, that is, the cooling time is significantly shortened (see FIGS. 32B and 32D). . Therefore, cooling by the Peltier element 12P can significantly increase the response speed of the infrared sensor 1A.

Although the beams 102a and 102b having the phononic crystal structure have excellent heat insulation performance, the reason why the above Peltier effect is obtained is as follows.

Heat is carried by lattice vibrations, called phonons, or conduction electrons. Since the beams 102a and 102b have a phononic crystal structure, heat conduction due to lattice vibration is suppressed. On the other hand, the phononic crystal structure only slightly suppresses the conduction of heat by conduction electrons simply by increasing the number of voids. Therefore, the Peltier effect described above can be obtained by applying current to the beams 102a and 102b.

The infrared sensor 1A operates as described above.

An infrared sensor 1B, which is a modification of the infrared sensor 1A, includes an insulating portion 401a physically connecting the beams 101a and 102a, and an insulating portion 401a physically connecting the beams 101b and 102b, as shown in FIG. 401b. Thereby, the mechanical strength for keeping the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 hollow can be increased. In addition, the insulating portions 401a and 401b are made of an insulating material. Therefore, electrical insulation is ensured between beams 101a and 102a and between beams 101b and 102b.

An infrared sensor 1C, which is another modification of infrared sensor 1A, further includes beams 104a and 104b in addition to beams 101a, 101b, 102a and 102b, as shown in FIG. Thereby, the mechanical strength for keeping the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 hollow can be increased.

(Embodiment 2)
An infrared sensor 1D of Embodiment 2 is shown in FIGS. 18A-18C. FIG. 18B shows cross-section 18B-18B of infrared sensor 1D of FIG. 18A. FIG. 18C shows cross-section 18C-18C of infrared sensor 1D of FIG. 18A. Infrared sensor 1D is a bolometer infrared sensor.

Unlike the infrared sensor 1A of the first embodiment, the infrared sensor 1D further includes supports 34a, 34b, 34c, and 34d arranged on the upper surface 31 of the base substrate 11. As shown in FIG. Base substrate 11 does not have recess 32 . Supports 34 a , 34 b , 34 c , 34 d extend away from upper surface 31 of base substrate 11 . One end of each of beams 101a, 101b, 102a, 102b is electrically connected to posts 34a, 34b, 34c, 34d, respectively.

The variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 are supported by beams 101a, 101b, 102a, and 102b while being separated from the base substrate 11. FIG. As shown in FIG. 18B, bolometer infrared receiver 12A, beam 101a, and beam 101b are suspended above base substrate 11 by supports 34a and 34b. Also, as shown in FIG. 18C, Peltier element 12P, beams 102a, and beams 102b are suspended above base substrate 11 by supports 34c and 34d. As is well known in the art, their suspension improves the detection sensitivity of the infrared sensor.

The beam 101a is electrically connected to the second wiring 14a through the support 34a. The beam 101b is electrically connected to the second wiring 14b via the support 34b. The beam 102a is electrically connected to the second wiring 14c through the support 34c. The beam 101d is electrically connected to the second wiring 14d through the support 34d.

The interface 103 is thermally connected to the variable resistance layer 201 via the first wiring 16 and the insulating film 17 .

The struts 34a, 34b, 34c, 34d are constructed from a conductive material. A conductive material is, for example, a metal. The metal forming each of the pillars 34a, 34b, 34c, and 34d is, for example, Cu and Al.

The infrared sensor 1</b>D may further have an infrared reflecting film on the upper surface 31 of the base substrate 11 . In this form, the detection sensitivity of the infrared sensor 1D can be further enhanced. Materials that constitute the infrared reflective film are, for example, Al and Au.

The phononic crystal structure includes a section 111a between the support 34a of the beam 101a in plan view and one end of the resistance change layer 201, a section 111b between the support 34b of the beam 101b in plan view and the other end of the resistance change layer 201, and It is desirable to be provided in the section 112a between the support 34c of the beam 102a and one end of the resistance change layer 201 and the section 112b between the support 34d of the beam 102b in plan view and the other end of the resistance change layer 201.

Other configurations of the infrared sensor 1D of the second embodiment are the same as corresponding configurations of the infrared sensor 1A of the first embodiment, including preferred aspects. Also, the operation of the infrared sensor 1D of the second embodiment is the same as the operation of the infrared sensor 1A of the first embodiment.

An example of a method for manufacturing the infrared sensor 1D of Embodiment 2 will be described below.

First, a semiconductor substrate is prepared as the base substrate 11 . The semiconductor substrate is made of Si, for example.

Next, electrode pads 13a, 13b, 15a, 15b and second wirings 14a, 14b, 14c, 14d are formed on the upper surface 31 of the base substrate 11, as shown in FIG. Electrode pads 13a, 13b, 15a, 15b and second wirings 14a, 14b, 14c, 14d are formed by known methods including thin film forming techniques such as sputtering or vapor deposition, and pattern forming techniques such as photolithography. is available. An infrared reflecting film may be formed on the upper surface 31 of the base substrate 11 together with the electrode pads 13a, 13b, 15a, 15b and the second wirings 14a, 14b, 14c, 14d.

Next, as shown in FIGS. 21A to 21C, a sacrificial layer 504 and beam layers 505a and 505b are sequentially formed on the upper surface 31 of the base substrate 11. Next, as shown in FIGS. The sacrificial layer 504 is formed to cover the electrode pads 13a, 13b, 15a, 15b and the second wirings 14a, 14b, 14c, 14d. The sacrificial layer 504 is typically made of resin. As the thickness of the sacrificial layer 504, the separation distance between the beams 101a, 101b, 102a, 102b and the base substrate 11 in the infrared sensor 1D to be manufactured can be selected. The resin is, for example, polyimide. The sacrificial layer 504 can be formed by known thin film forming techniques such as CVD, sputtering, or spin coating. The material forming the beam layer 505a is, for example, n-type Si. The material forming the beam layer 505b is, for example, p-type Si. The beam layers 505a and 505b can be formed by CVD and photolithography. Each thickness of the beam layers 505a and 505b is, for example, 10 nm or more and 500 nm or less.

Next, as shown in FIGS. 22A-22C, a plurality of through holes 18 are periodically formed in the regions 1011a, 1011b, 1021a, 102 1 b. 22A to 22C, illustration of the plurality of through holes 18 is omitted. The method of forming the plurality of through holes 18 is as described above.

Next, as shown in FIGS. 23A-23C, photolithography and etching are used to remove the beam layers 505a, 505b except for the areas 1011a, 1011b, 1021a, 1021b, leaving the beams 101a, 101b, 102a, 102b. to form

Next, as shown in FIGS. 24A and 24B, photolithography and etching are used to form the first wiring 16 electrically connecting the beams 102a and 102b. Then, an insulating film 17 made of SiN is formed so as to cover the first wiring 16 by photolithography and a known thin film formation method.

Next, struts 34a, 34b, 34c, 34d are formed as shown in FIGS. 25A-25C. The formation of the pillars 34a, 34b, 34c, 34d includes selective etching to secure spaces for forming the pillars 34a, 34b, 34c, 34d, and formation of the pillars 34a, 34b, 34c, 34d in the secured spaces. A thin film forming method such as a sputtering method or a vapor deposition method can be used for this purpose.

Next, as shown in FIGS. 26A to 26C, resistance change layer 201, insulating film 202, and infrared absorption layer 203 are formed. The configuration and formation method of each of the resistance change layer 201, the insulating film 202, and the infrared absorption layer 203 are as described above.

Finally, sacrificial layer 504 is removed by selective etching.

As described above, the infrared sensor 1D of Embodiment 2 shown in FIGS. 18A to 18C is obtained.

Instead of the Peltier element 12P described above, a Peltier element 12P without the interface 103 can be used as shown in FIG. 18D. In this case, the first wiring 16 corresponds to the cold junction of the Peltier element 12P. The first wiring 16 is thermally connected to the variable resistance layer 201 via the insulating film 17 .

An infrared sensor 1E, which is a modification of the infrared sensor 1D, further includes beams 104a and 104b as shown in FIG. Thereby, the mechanical strength for keeping the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 hollow can be increased.

(Embodiment 3)
An infrared sensor 1F of Embodiment 3 is shown in FIGS. 27A-27C. FIG. 27B shows cross section 27B-27B of infrared sensor 1F of FIG. 27A. FIG. 27C shows cross section 27C-27C of infrared sensor 1F of FIG. 27A. The infrared sensor 1F is a bolometer infrared sensor.

Unlike the infrared light receiving portion 12A of the infrared sensor 1D of Embodiment 2, the infrared light receiving portion 12B of the infrared sensor 1F further includes a thin film 301a formed on the beam 101a and a thin film 301b formed on the beam 101b. Prepare. The thin film 301a and the thin film 301b are also referred to as a bolometer first thin film and a bolometer second thin film, respectively.

Unlike the Peltier element 12P of the infrared sensor 1D of the second embodiment, the Peltier element 21P of the infrared sensor 1F further includes a thin film 302a formed on the beam 102a and a thin film 302b formed on the beam 102b. The thin film 302a and the thin film 302b are also referred to as a Peltier first thin film and a Peltier second thin film, respectively.

One end of each of thin films 301a, 301b, 302a, 302b is electrically connected to posts 34a, 34b, 34c, 34d, respectively.

The other ends of the thin films 301 a and 301 b are connected to the resistance change layer 201 .

The other end of the thin film 302a is connected to the other end of the thin film 302b to form an interface 104. FIG. A first wiring 16 electrically connecting the thin films 302 a and 302 b is formed on the thin films 302 a and 302 b so as to straddle the interface 104 . Furthermore, an insulating film 17 is formed on the first wiring 16 and the thin films 302 a and 302 b so as to cover the first wiring 16 .

The variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 are supported in a state separated from the base substrate 11 by the beams 101a, 101b, 102a, 102b and the thin films 301a, 301b, 302a, 302b. As shown in FIGS. 27B and 27C, in a cross-sectional view, the variable resistance layer 201, the insulating film 202, the infrared absorption layer 203 and the beams 101a, 101b, 102a, 102b are based on the supports 34a, 34b, 34c, 34d. It is suspended above the substrate 11 .

Each of the beams 101a, 101b, 102a, 102b is made of an insulating material.

The thin films 301a and 301b are used to read detection signals of infrared rays incident on the infrared light receiving section 12B.

The thin films 301a and 301b are made of a conductive material. Electrically conductive materials are, for example, metals with low thermal conductivity (eg Ti or TiN) and semiconductors. More preferably, the electrically conductive material is a semiconductor such as doped Si or SiGe.

Each of thin films 301a and 301b has a phononic crystal structure. In the thin film 301a in plan view, the phononic crystal structure has a section 311a between the support 34a and one end of the variable resistance layer 201, and a section 311b in the thin film 301b in plan view between the support 34b and the other end of the variable resistance layer 201. It is desirable to be provided in

When metal is used as the material for each of the thin films 301a and 301b, the heat insulation effect due to the phononic crystal structure is less likely to appear. In this case, it is desirable to set the thickness to 10 nm or less in order to obtain a heat insulating effect.

The thin films 302a and 302b form a thermocouple and function as a Peltier element. That is, the thin films 302a and 302b are used to absorb heat generated in the infrared light receiving section 12B. Interface 104 corresponds to the cold junction of the Peltier element. The interface 104 is thermally connected to the variable resistance layer 201 through the first wiring 16 and the insulating film 17 . One of the thin films 302a, 302b is made of p-type semiconductor material. The other of the thin films 302a, 302b is made of an n-type semiconductor material. Each of the p-type semiconductor material and the n-type semiconductor material is preferably a silicon-based semiconductor material (eg, Si or SiGe) used in silicon processes.

Each of the thin films 302a, 302b has a phononic crystal structure. The phononic crystal structure includes a section 312a between the support 34c and one end of the resistance change layer 201 in the thin film 302a in plan view, and a section 312b between the support 34d and the other end of the resistance change layer 201 in the thin film 302b in plan view. It is desirable to be provided in

Other configurations of the infrared sensor 1F of the third embodiment are the same as corresponding configurations of the infrared sensor 1D of the second embodiment, including preferred aspects. Further, the operation of the infrared sensor 1F of the third embodiment is such that the thin films 301a and 301b instead of the beams 101a and 101b read infrared detection signals, and the thin films 302a and 302b instead of the beams 102a and 102b serve as Peltier elements. The operation is the same as that of the infrared sensor 1A of Embodiment 1 except that it functions.

A person skilled in the art can easily manufacture the infrared sensor 1F according to the third embodiment by referring to the description of the manufacturing method of the infrared sensor 1D according to the second embodiment.

Instead of the Peltier element 21P described above, a Peltier element without the interface 104 can be used, as shown in FIG. 27D. In this case, the first wiring 16 corresponds to the cold junction of the Peltier element. The first wiring 16 is thermally connected to the variable resistance layer 201 via the insulating film 17 .

As shown in FIG. 28, an infrared sensor 1G, which is a modification of the infrared sensor 1F, includes an insulating portion 401a that physically connects the beams 101a and 102a, and an insulating portion that physically connects the beams 101b and 102b. 401b. Thereby, the mechanical strength for keeping the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 hollow can be increased. In addition, the insulating portions 401a and 401b are made of an insulating material. Therefore, electrical insulation is ensured between the beams 101a and 102a and between the beams 101b and 102b.

An infrared sensor 1H, which is another modification of the infrared sensor 1F, further includes beams 104a and 104b as shown in FIG. Thereby, the mechanical strength for keeping the variable resistance layer 201, the insulating film 202, and the infrared absorption layer 203 hollow can be increased.

(Embodiment 4)
An infrared sensor 1I of Embodiment 4 is shown in FIGS. 30A-30C. FIG. 30B shows cross-section 30B-30B of infrared sensor 1I of FIG. 30A. FIG. 30C shows cross-section 30C-30C of infrared sensor 1I of FIG. 30A. The infrared sensor 1I is a thermopile infrared sensor.

Unlike the infrared light receiving portion 12A of the infrared sensor 1A of the first embodiment, the infrared light receiving portion 12C of the infrared sensor 1I includes beams 101a and 101b, an infrared absorbing layer 203, a first wiring 16a, and an insulating film 17a.

One end of the beam 101 a and one end of the beam 101 b are connected to the base substrate 11 . The other end of beam 101a is connected to the other end of beam 101b to form interface 103a. The infrared sensor 1I further includes a first wiring 16a and an insulating film 17a. The first wiring 16a is formed on the beams 101a and 101b so as to straddle the interface 103a. The first wiring 16a electrically connects the beams 101a and 101b. The insulating film 17a is formed on the first wiring 16a, the beams 101a, and the beams 101b.

The beams 101 a and 101 b are used to read detection signals of infrared rays incident on the infrared absorption layer 203 . One of the beams 101a, 101b is made of p-type semiconductor material. The other of the beams 101a, 101b is made of n-type semiconductor material. The beams 101a and 101b are also referred to as a first thermopile beam and a second thermopile beam, respectively.

The Peltier element 12P of the infrared sensor 1I has the same configuration as the Peltier element 12P of the infrared sensor 1A of the first embodiment.

Other configurations of the infrared sensor 1I of the fourth embodiment are the same as corresponding configurations of the infrared sensor 1A of the first embodiment, including preferred aspects.

The operation of the infrared sensor 1I of Embodiment 4 will be described below.

When infrared rays are incident on the infrared absorption layer 203 , the infrared rays are absorbed by the infrared absorption layer 203 . As a result, the temperature of the beams 101a and 101b, which are in thermal contact with the infrared absorption layer 203 via the infrared light receiving section 12B and the insulating film 17a, rises. As a result, a temperature difference occurs in the direction from the infrared absorption layer 203 to the base substrate 11 in the beams 101a and 101b. As a result, the beams 101a and 101b generate an electromotive force due to the Seebeck effect. The generated electromotive force is measured by a signal processing circuit connected to the electrode pads 13a and 13b, and the infrared detection intensity is calculated.

After that, the infrared absorption layer 203 is cooled by the Peltier element. This cooling method is the same as the cooling method for the infrared sensor 1A of the first embodiment.

The infrared sensor 1I operates as described above.

A person skilled in the art can easily manufacture the infrared sensor 1I according to the fourth embodiment by referring to the description of the manufacturing method of the infrared sensor 1A according to the first embodiment.

Instead of the Peltier element 12P described above, a Peltier element 12P without the interface 103b can be used as shown in FIG. 30D. In this case, the first wiring 16b corresponds to the cold junction of the Peltier device. The first wiring 16b is thermally connected to the variable resistance layer 201 via the insulating film 17b .

An infrared sensor 1J, which is a modification of the infrared sensor 1I, includes an insulating layer 222, beams 101c, 101d, 102c, 102d, 102e, 102f, 102g, 102h, 102i, 102j, and 102k, as shown in FIGS. 31A and 31B. , 102l, and first wires 16c, 16d, 16e, 16f, 16g, 16h, 16i, 16j, 16k, 16l, 16m, and 16n.

The insulating layer 222 is made of Si, for example.

The first wirings 16 a , 16 c , 16 d , 16 f , 16 h , 16 j , 16 l and 16 n are formed on the insulating layer 222 .

The infrared absorbing layer 203 is formed on the insulating layer 222 .

One end of each of beams 101 a, 101 b, 101 c, 101 d, 102 a, 102 b, 102 c, 102 d, 102 e, 102 f, 102 g, 102 h, 102 i, 102 j, 102 k, and 102 l is connected to insulating layer 222 .

The other ends of the beams 101a, 101b, 101c, 101d, 102a, 102b, 102c, 102d, 102e, 102f, 102g, 102h, 102i, 102j, 102k, and 102l are connected to the base substrate 11. As shown in FIG.

The beams 101a, 101b, 101c and 101d are electrically connected in series by first wirings 16a, 16b and 16c. One of each of beams 101a, 101c and beams 101b, 101d is made of p-type semiconductor material. The other of each of beams 101a, 101c and beams 101b, 101d is made of n-type semiconductor material.

Each of the beams 101a, 101b, 101c, 101d, 102a, 102b, 102c, 102d, 102e, 102f, 102g, 102h, 102i, 102j, 102k, 102l has a phononic crystal structure.

The first wirings 16d, 16e, 16f, 16g, 16h, 16i, 16j, 16k, 16l, 16m, 16n are electrically connected in series by One of each of beams 102a, 102c, 102e, 102g, 102i, 102k and beams 102b, 102d, 102f, 102h, 102j, 102l is made of p-type semiconductor material. The other of each of beams 102a, 102c, 102e, 102g, 102i, 102k and beams 102b, 102d, 102f, 102h , 102j, 102l is made of n-type semiconductor material. The first wirings 16d, 16f, 16h, 16j, 16l, and 16n correspond to cold junctions of the Peltier elements. The infrared absorbing layer 203 is indirectly cooled via the insulating layer 222 . Since the infrared sensor 1J has a plurality of cold junctions, it has a better cooling effect.

(Example 1)
The infrared sensor according to Example 1 had the same configuration as the infrared sensor 1A of the first embodiment.

Using a semiconductor process, an infrared sensor according to Example 1 was produced as follows.
First, an SOI wafer 111 (manufactured by Shin-Etsu Chemical Co., Ltd.) was purchased. As shown in FIGS. 12A and 12B, the SOI wafer 111 has a laminated structure consisting of a lower Si layer 501 with a thickness of 625 μm, a middle _SiO2 layer 502 with a thickness of 2 μm and an upper Si layer 503 with a thickness of 150 nm. had

Next, as shown in FIGS. 13A to 13C, photolithography and ion implantation are performed to form a region 1011a that will become the beam 101a, a region 1011b that will become the beam 101b, a region 1021a that will become the beam 102a, and a region 1021b that will become the beam 102b. Each was doped with ions described later. Note that the regions 1011a, 1011b, 1021a, and 1021b are included in the region R having a rectangular outer shape. Each of regions 1011a, 1011b was doped with boron (B) at an acceleration voltage of 20 keV and a dose of 9.3×10 ¹⁴ atoms/cm ² . On the other hand, region 1021a was doped with boron at an acceleration voltage of 20 keV and a dose of 9.3×10 ¹⁴ atoms/cm ² . Region 1021b was doped with phosphorus at an acceleration voltage of 55 keV and a dose of 9.0×10 ¹⁴ atoms/cm ² . Then, the SOI wafer 111 was subjected to heat treatment in a nitrogen atmosphere at 1000° C. for 5 minutes.

A plurality of through-holes 18 with a diameter of 80 nm were then formed periodically every 100 nm in the regions 1011a, 1011b, 1021a, 1021b by electron beam lithography and etching. FIG. 13D shows an enlarged view of region 1011b in which a plurality of through holes 18 are formed. Thus, a phononic crystal structure was formed. The ratio of the diameter of the through holes 18 of 80 nm to the period of 100 nm was 0.8.

Next, as shown in FIGS. 14A to 14E, photolithography and etching are used to remove the Si layer 503 in region R (FIG. 13A) excluding regions 1011a, 1011b, 1021a, and 1021b. 102a and 102b were formed. Each of the beams 101a, 101b had a width W1 of 1 μm and a length L1 of 14 μm. Each of the beams 102a, 102b functioning as Peltier elements had a width W2 of 1 μm and a length L2 of 16 μm.

Next, as shown in FIGS. 15A to 15C, second wirings 14a, 14b, 14c, 14d made of Al having a thickness of 100 nm and electrode pads 13a made of Al having a thickness of 100 nm are formed by photolithography and sputtering. , 13b, 15a, 15b were formed. In parallel with this, a first wiring 16 made of Al having a thickness of 100 nm and electrically connecting the beams 102a and 102b was formed by photolithography and sputtering. Then, by photolithography and sputtering, an insulating film 17 made of SiN having a thickness of 30 nm was formed so as to cover the first wiring 16 .

Next, as shown in FIGS. 16A to 16C, a variable resistance layer 201 made of amorphous Si, an insulating film 202 made of SiN, and an infrared absorption layer 203 made of Cr are laminated by photolithography and sputtering. Part 12A was formed. The infrared light receiving portion 12A had a size of 12 μm×12 μm. The variable resistance layer 201 had a thickness of 200 nm. The insulating film 202 had a thickness of 30 nm. The infrared absorption layer 203 had a thickness of 5 nm.

Finally, the SiO ₂ layer 502 was partially removed by vapor-phase hydrofluoric acid etching, as shown in FIGS. 17A-17C. Thus, an infrared sensor according to Example 1 was produced.

(Example 2)
In the same manner as in Example 1, except that block copolymer lithography was used instead of electron beam lithography, and through-holes 18 with a diameter of 27.2 nm were periodically formed every 34 nm, the infrared sensor was made. The ratio of the diameter of the through-holes 18 of 27.2 nm to the period of 34 nm was 0.8 as in the first embodiment. Therefore, in Example 1 and Example 2, the porosity is the same. Here, the porosity means the ratio of the total area of the plurality of through-holes 18 in plan view to the area of the regions 1011a, 1011b, 1021a, or 1021b. For example, if the area of the region 1011a is S1 (FIG. 13A), the number of through-holes 18 formed in the region 1011a is n1, and the area of each through-hole 18 is s1 (FIG. 7B), the porosity is n1×s1 /S1.

(Comparative example 1)
An infrared sensor was fabricated using the same process as in Example 1, except that the through hole 18 was not formed.

(Performance of Peltier device)
The Peltier effect performance of the infrared sensors according to Examples 1 and 2 and Comparative Example 1 was verified. A steady voltage of 2V was applied to the beams 101a and 101b while cooling the infrared receiving section 12A by applying a steady current of 3mA to the beams 102a and 102b. The current flowing through the resistance change layer 201 at this time was measured, and the temperature of the infrared light receiving section 12A was calculated from the resistance change. The temperature of the infrared light receiving section 12A before cooling was 25.0°C.

Table 1 shows the results of Examples 1, 2 and Comparative Example 1.

As is clear from Table 1, the Peltier effects of the infrared sensors according to Examples 1 and 2 are superior to the Peltier effect of the infrared sensor according to Comparative Example 1. Moreover, when each of the beams 102a and 102b functioning as a Peltier element has a phononic crystal, it can be seen that the cooling performance of the Peltier element can be improved as the period of the phononic crystal becomes smaller.

(Time response test)
The infrared sensors according to Example 1 and Comparative Example 1 were subjected to a time response test. In the time response test, first, the signal processing circuit applies a constant voltage to the beams 101a and 101b via the electrode pads 13a and 13b and the second wirings 14a and 14b, and the amount of current flowing through the resistance change layer 201 is measured by the signal processing circuit. monitored by Next, the infrared light receiving portion 12A was irradiated with infrared rays for 5 ms. After this, infrared radiation was cut off. At the same time, immediately after the pulse current of 25 μA started to be applied to the beams 102a and 102b, the pulse current of 25 μA was applied to the beams 102a and 102b for 0.010 ms.

32A is a graph showing the results of a time response test when current is applied to beam 102 of the infrared sensor according to Example 1. FIG. FIG. 32B is an enlarged view of portion B enclosed by a dotted line in FIG. 32A. 32C is a graph showing the results of a time response test when no current was applied to beam 102 of the infrared sensor according to Example 1. FIG. FIG. 32D is an enlarged view of portion D enclosed by a dotted line in FIG. 32C. 32E is a graph showing the results of a time response test when no current was applied to beam 102 of the infrared sensor according to Comparative Example 1. FIG.

32A and 32E, the current value of resistance change layer 201 of the infrared sensor according to Example 1 is greater than the current value of resistance change layer 201 of the infrared sensor according to Comparative Example 1. FIG. That is, the infrared sensor according to Example 1, which has a phononic crystal, has better detection sensitivity than the infrared sensor according to Comparative Example 1, which does not have a phononic crystal.

Also, as can be seen from Figures 32B and 32D, the pulsed current through beams 102a, 102b significantly reduces the fall time from 0.4ms to 0.015ms. Here, let t ₀ be the time when the infrared rays are cut off, I ₀ be the current value at the time t ₀ , and t ₁ be the time when the current value becomes I ₀ ×exp(−1) after the infrared rays are cut off. Fall time is defined as t ₁ -t ₀ . If the fall time after the first infrared ray is cut off is short, the second infrared ray that is next incident on the infrared ray receiving section 12A can be accurately detected in a short time after the first infrared ray is cut off. Therefore, for example, when measuring the temperature of a distant object, it is possible to quickly detect a decrease in the temperature of the object.

From the above, by cooling the infrared light receiving part 12A using the Peltier element, the response speed of the infrared sensor (that is, the short time from after the first infrared ray is blocked to when the second infrared ray is accurately detected ) can be improved.

In the configuration of the present disclosure, it is possible to provide an infrared sensor capable of achieving both excellent detection sensitivity and excellent response speed.

Inventions derived from the above disclosure are as follows.

(Item A1)
an infrared sensor,
base board,
bolometer infrared receiver and Peltier element,
a first post extending away from the base substrate; a second post extending away from the base substrate;
a third pillar extending away from the base substrate; and a fourth pillar extending away from the base substrate;
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a first bolometer beam electrically connected to the variable resistance layer; and a second bolometer beam electrically connected to the variable resistance layer;
is equipped with
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
The Peltier element comprises a first Peltier beam made of p-type semiconductor material and a second Peltier beam made of n-type semiconductor material,
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
One end of the first bolometer beam, one end of the second bolometer beam, one end of the first Peltier beam, and one end of the second Peltier beam are, respectively, the first support, the second support, connected to the third strut and the fourth strut,
The bolometer infrared light receiving unit, the first bolometer beam, and the second bolometer beam are suspended above the base substrate by the first support and the second support,
The Peltier element, the first Peltier beam, and the second Peltier beam are suspended above the base substrate by the third support and the fourth support,
The first bolometer beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The second bolometer beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes comprising a fourth phononic crystal structure
Infrared sensor.

(Item A2)
The infrared sensor according to item A1,
The first phononic crystal structure is provided in a first section between the first support and one end of the variable resistance layer in the first bolometer beam in plan view,
The second phononic crystal structure is provided in a second section between the second support and the other end of the variable resistance layer in the second bolometer beam in plan view,
The third phononic crystal structure is provided in a third section between the third support and one end of the variable resistance layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between the fourth support and the other end of the variable resistance layer in the second Peltier beam in plan view.

(Item A3)
The infrared sensor according to item A1,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period.

(Item A4)
The infrared sensor according to item A3,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item A5)
The infrared sensor according to item A1,
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is thermally connected to the variable resistance layer.

(Item A6)
The infrared sensor according to item A1,
The other end of the first Peltier beam is not connected to the other end of the second Peltier beam,
The first Peltier beam is electrically connected to the second Peltier beam by a first wiring,
The first wiring is thermally connected to the variable resistance layer.

(Item A7)
The infrared sensor according to item A5,
In a plan view, the variable resistance layer has four regions of equal area,
The interface borders at least two of the regions.

(Item A8)
The infrared sensor according to item A3,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
The first domain, the second domain, the third domain, and the fourth domain are the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure, respectively. contains a crystal structure,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a fifth domain, a sixth domain, a seventh domain, and an eighth domain;
A fifth phononic crystal structure composed of a plurality of through-holes regularly arranged in a fifth period is formed in the fifth domain,
A sixth phononic crystal structure composed of a plurality of through-holes regularly arranged in a sixth period is formed in the sixth domain,
A seventh phononic crystal structure composed of a plurality of through holes regularly arranged in a seventh period is formed in the seventh domain,
an eighth phononic crystal structure composed of a plurality of through-holes regularly arranged in an eighth period is formed in the eighth domain,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
the value of the fifth period is greater than the value of the first period;
the value of the sixth period is greater than the value of the second period;
The value of the seventh period is greater than the value of the third period, and the value of the eighth period is greater than the value of the fourth period.

(Item A9)
The infrared sensor according to item A8,
In the first domain, between the plurality of through holes regularly arranged in the first period in the first domain, a plurality of through holes regularly arranged in a ninth period different from the first period through holes are formed,
In the second domain, between the plurality of through holes regularly arranged in the second period in the second domain, a plurality of through holes regularly arranged in a tenth period different from the second period through holes are formed,
In the third domain, between the plurality of through holes regularly arranged in the third period in the third domain, a plurality of through holes regularly arranged in an eleventh period different from the third period through holes are formed,
In the fourth domain, between the plurality of through holes regularly arranged in the fourth period in the fourth domain, a plurality of through holes regularly arranged in a 12th period different from the fourth period through holes are formed,
In the fifth domain, between the plurality of through holes regularly arranged in the fifth period in the fifth domain, a plurality of through holes regularly arranged in a thirteenth period different from the fifth period through holes are formed,
In the sixth domain, between the plurality of through-holes regularly arranged in the sixth domain in the sixth period, a plurality of through holes regularly arranged in a 14th period different from the sixth period through holes are formed,
In the seventh domain, between the plurality of through-holes regularly arranged in the seventh period in the seventh domain, a plurality of through holes regularly arranged in a fifteenth period different from the seventh period and in the eighth domain, between the plurality of through-holes regularly arranged in the eighth domain in the eighth period, a period different from the eighth period is formed. A plurality of through holes arranged regularly in 16 cycles are formed.

(Item A10)
The infrared sensor according to item A8,
The number of the plurality of through holes regularly arranged in the first period, the number of the plurality of through holes regularly arranged in the second period, the number of the plurality of through holes regularly arranged in the third period number of the plurality of through holes, number of the plurality of through holes regularly arranged in the fourth period, number of the plurality of through holes regularly arranged in the fifth period, in the sixth period the number of the plurality of through-holes regularly arranged, the number of the plurality of through-holes regularly arranged with the seventh period, and the plurality of through-holes regularly arranged with the eighth period is 5 or more.

(Item A11)
The infrared sensor according to item A8,
A unit cell having a periodic structure that constitutes each of the first domain, the second domain, the third domain, the fourth domain, the fifth domain, the sixth domain, the seventh domain, and the eighth domain is either a square lattice, a hexagonal lattice, a rectangular lattice, or a face-centered rectangular lattice.

(Item A12)
The infrared sensor according to item A8,
Each value of the first period, the second period, the third period, the fourth period, the fifth period, the sixth period, the seventh period, and the eighth period is 1 nm or more and 300 nm. It is below.

(Item A13)
The infrared sensor according to item A8,
The value obtained by dividing the diameter value of the plurality of through holes regularly arranged in the first period by the value in the first period, the diameter of the plurality of through holes regularly arranged in the second period A value obtained by dividing the value of the diameter by the value of the second period, a value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the third period by the value of the third period , A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in the fourth period by the value of the fourth period, the diameter of the plurality of through-holes regularly arranged in the fifth period The value obtained by dividing the value of the fifth period by the value of the fifth period, the value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the sixth period by the value of the sixth period, the A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in seven periods by the value of the seventh period, and the diameter of the plurality of through-holes regularly arranged in the eighth period is divided by the value of the eighth period is 0.5 or more and 0.9 or less.

(Item A14)
The infrared sensor according to item A1,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
the first domain comprises a plurality of first subdomains regularly arranged in a first period;
the second domain comprises a plurality of second subdomains regularly arranged in a second period;
the third domain comprises a plurality of third subdomains regularly arranged in a third period;
the fourth domain comprises a plurality of fourth subdomains regularly arranged in a fourth period;
Each of the plurality of first subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a fifth period,
Each of the plurality of second subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a sixth period,
Each of the plurality of third subdomains is formed of a phononic crystal having a plurality of through holes regularly arranged in a seventh period, and each of the plurality of fourth subdomains is formed of a It is formed from a phononic crystal having a plurality of through-holes regularly arranged at intervals.

(Item A15)
The infrared sensor according to item A14,
the bolometer first beam further includes a fifth domain;
the second bolometer beam further includes a sixth domain;
The Peltier first beam further includes a seventh domain,
The Peltier second beam further includes an eighth domain,
The fifth domain comprises a plurality of fifth subdomains regularly arranged in a ninth period,
The sixth domain comprises a plurality of sixth subdomains regularly arranged in a tenth period,
The seventh domain comprises a plurality of seventh subdomains regularly arranged in an 11th period,
The eighth domain comprises a plurality of eighth subdomains regularly arranged in a 12th period,
Each of the plurality of fifth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 13th period,
Each of the plurality of sixth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 14th period,
Each of the plurality of seventh subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 15th period,
Each of the plurality of eighth subdomains is formed from a phononic crystal having a plurality of through-holes regularly arranged in a 16th period,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
The value of the ninth period is greater than the value of the first period,
the value of the tenth period is greater than the value of the second period;
The value of the eleventh period is greater than the value of the third period, and
The value of the 12th period is greater than the value of the 4th period.

(Item A16)
A method of cooling a bolometric infrared receiver of an infrared sensor comprising:
(a) providing the infrared sensor comprising:
a base substrate having a recess;
the bolometer infrared receiver, and a Peltier element,
a first post extending away from the base substrate; a second post extending away from the base substrate;
a third pillar extending away from the base substrate; and a fourth pillar extending away from the base substrate;
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a first bolometer beam electrically connected to the variable resistance layer; and a second bolometer beam electrically connected to the variable resistance layer;
is equipped with
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
The Peltier element comprises a first Peltier beam made of p-type semiconductor material and a second Peltier beam made of n-type semiconductor material,
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
One end of the first bolometer beam, one end of the second bolometer beam, one end of the first Peltier beam, and one end of the second Peltier beam are, respectively, the first support, the second support, connected to the three struts and the fourth strut,
The bolometer infrared light receiving unit, the first bolometer beam, and the second bolometer beam are suspended above the base substrate by the first support and the second support,
The Peltier element, the first Peltier beam, and the second Peltier beam are suspended above the base substrate by the third support and the fourth support,
The first bolometer beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The second bolometer beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes comprising a fourth phononic crystal structure,
(b) making the infrared rays incident on the bolometer infrared receiver;
(c) blocking the infrared rays incident on the bolometer infrared receiver; and ( d ) applying a current to the first Peltier beam and the second Peltier beam to cool the bolometer infrared receiver. .

(Item A17)
A method for cooling the bolometer infrared receiving part of the infrared sensor according to item A16,
The first phononic crystal structure is provided in a first section between the other end of the first bolometer beam and one end of the variable resistance layer in the first bolometer beam in plan view,
The second phononic crystal structure is provided in a second section between the other end of the second bolometer beam and the other end of the variable resistance layer in the second bolometer beam in plan view,
The third phononic crystal structure is provided in a third section between the other end of the first Peltier beam and one end of the variable resistance layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between the other end of the second Peltier beam and the other end of the variable resistance layer in the second Peltier beam in plan view.

(Item A18)
A method for cooling the bolometer infrared receiving part of the infrared sensor according to item A16,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period.

(Item A19)
A method for cooling the bolometer infrared receiver of the infrared sensor according to item A18,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item A20)
A method for cooling the bolometer infrared receiving part of the infrared sensor according to item A16,
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is sandwiched between the variable resistance layer and the recess.

(Item B1)
an infrared sensor,
base board,
bolometer infrared receiver and Peltier element,
a first post extending away from the base substrate; a second post extending away from the base substrate;
a third pillar extending away from the base substrate; and a fourth pillar extending away from the base substrate;
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a bolometer first beam formed from a first insulating material;
a second bolometer beam formed from a second insulating material;
a bolometer first thin film formed on the bolometer first beam; and a bolometer second thin film formed on the bolometer second beam;
is equipped with
The bolometer first thin film is electrically connected to the variable resistance layer,
The bolometer second thin film is electrically connected to the variable resistance layer,
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
The Peltier element is
a Peltier first beam formed from a third insulating material;
a Peltier second beam formed from a fourth insulating material;
a Peltier first thin film formed on the Peltier first beam; and a Peltier second thin film formed on the Peltier second beam;
is equipped with
The Peltier first thin film is made of a p-type semiconductor material,
The Peltier first thin film is made of an n-type semiconductor material,
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
One end of the first bolometer beam and one end of the first bolometer thin film are connected to the first support,
One end of the second bolometer beam and one end of the second bolometer thin film are connected to the second support,
one end of the first Peltier beam and one end of the first Peltier thin film are connected to the third support,
one end of the second Peltier beam and one end of the second Peltier thin film are connected to the fourth support,
The bolometer infrared receiver, the first bolometer beam, the first bolometer thin film, the second bolometer beam, and the second bolometer thin film are suspended above the base substrate by the first support and the second support. and
The Peltier element, the first Peltier beam, the first Peltier thin film, the second Peltier beam, and the second Peltier thin film are suspended above the base substrate by the third support and the fourth support. ,
The bolometer first thin film has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The bolometer second thin film has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier thin film has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier thin film is composed of a plurality of regularly arranged through holes. comprising a fourth phononic crystal structure
Infrared sensor.

(Item B2)
The infrared sensor according to item B1,
The first phononic crystal structure is provided in a first section between the first support and one end of the variable resistance layer in the first bolometer thin film in plan view,
The second phononic crystal structure is provided in a second section between the second support and the other end of the resistance change layer in the planar view of the second bolometer thin film,
The third phononic crystal structure is provided in a third section between the third support and one end of the variable resistance layer in the Peltier first thin film in plan view,
The fourth phononic crystal structure is provided in a fourth section between the fourth support and the other end of the variable resistance layer in the second Peltier thin film in plan view.

(Item B3)
The infrared sensor according to item B1,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period.

(Item B4)
The infrared sensor according to item B3,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item B5)
The infrared sensor according to item B1,
the other end of the first Peltier thin film is connected to the other end of the second Peltier thin film to form an interface between the first Peltier thin film and the second Peltier thin film;
The interface is thermally connected to the variable resistance layer.

(Item B6)
The infrared sensor according to item B1,
The other end of the first Peltier thin film is not connected to the other end of the second Peltier thin film,
The Peltier first thin film is electrically connected to the Peltier second thin film by a first wiring,
The first wiring is thermally connected to the variable resistance layer.

(Item B7)
The infrared sensor according to item B5,
In plan view, the variable resistance layer has four regions of equal area,
The interface borders at least two of the regions.

(Item B8)
The infrared sensor according to item B3,
the bolometer first thin film, the bolometer second thin film, the Peltier first thin film, and the Peltier second thin film respectively include a first domain, a second domain, a third domain, and a fourth domain;
The first domain, the second domain, the third domain, and the fourth domain are the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure, respectively. contains a crystal structure,
the bolometer first thin film, the bolometer second thin film, the Peltier first thin film, and the Peltier second thin film each include a fifth domain, a sixth domain, a seventh domain, and an eighth domain;
A fifth phononic crystal structure composed of a plurality of through-holes regularly arranged in a fifth period is formed in the fifth domain,
A sixth phononic crystal structure composed of a plurality of through-holes regularly arranged in a sixth period is formed in the sixth domain,
A seventh phononic crystal structure composed of a plurality of through holes regularly arranged in a seventh period is formed in the seventh domain,
an eighth phononic crystal structure composed of a plurality of through-holes regularly arranged in an eighth period is formed in the eighth domain,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
the value of the fifth period is greater than the value of the first period;
the value of the sixth period is greater than the value of the second period;
The value of the seventh period is greater than the value of the third period, and the value of the eighth period is greater than the value of the fourth period.

(Item B9)
The infrared sensor according to item B8,
In the first domain, between the plurality of through holes regularly arranged in the first period in the first domain, a plurality of through holes regularly arranged in a ninth period different from the first period through holes are formed,
In the second domain, between the plurality of through holes regularly arranged in the second period in the second domain, a plurality of through holes regularly arranged in a tenth period different from the second period through holes are formed,
In the third domain, between the plurality of through holes regularly arranged in the third period in the third domain, a plurality of through holes regularly arranged in an eleventh period different from the third period through holes are formed,
In the fourth domain, between the plurality of through holes regularly arranged in the fourth period in the fourth domain, a plurality of through holes regularly arranged in a 12th period different from the fourth period through holes are formed,
In the fifth domain, between the plurality of through holes regularly arranged in the fifth period in the fifth domain, a plurality of through holes regularly arranged in a thirteenth period different from the fifth period through holes are formed,
In the sixth domain, between the plurality of through-holes regularly arranged in the sixth domain in the sixth period, a plurality of through holes regularly arranged in a 14th period different from the sixth period through holes are formed,
In the seventh domain, between the plurality of through-holes regularly arranged in the seventh period in the seventh domain, a plurality of through holes regularly arranged in a fifteenth period different from the seventh period and in the eighth domain, between the plurality of through-holes regularly arranged in the eighth domain in the eighth period, a period different from the eighth period is formed. A plurality of through holes are formed which are regularly arranged in 16 cycles.

(Item B10)
The infrared sensor according to item B8,
The number of the plurality of through holes regularly arranged in the first period, the number of the plurality of through holes regularly arranged in the second period, the number of the plurality of through holes regularly arranged in the third period number of the plurality of through holes, number of the plurality of through holes regularly arranged in the fourth period, number of the plurality of through holes regularly arranged in the fifth period, in the sixth period the number of the plurality of through-holes regularly arranged, the number of the plurality of through-holes regularly arranged with the seventh period, and the plurality of through-holes regularly arranged with the eighth period is 5 or more.

(Item B11)
The infrared sensor according to item B8,
A unit cell having a periodic structure that constitutes each of the first domain, the second domain, the third domain, the fourth domain, the fifth domain, the sixth domain, the seventh domain, and the eighth domain is either a square lattice, a hexagonal lattice, a rectangular lattice, or a face-centered rectangular lattice.

(Item B12)
The infrared sensor according to item B8,
Each value of the first period, the second period, the third period, the fourth period, the fifth period, the sixth period, the seventh period, and the eighth period is 1 nm or more and 300 nm. It is below.

(Item B13)
The infrared sensor according to item B8,
The value obtained by dividing the diameter value of the plurality of through holes regularly arranged in the first period by the value in the first period, the diameter of the plurality of through holes regularly arranged in the second period A value obtained by dividing the value of the diameter by the value of the second period, a value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the third period by the value of the third period , A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in the fourth period by the value of the fourth period, the diameter of the plurality of through-holes regularly arranged in the fifth period The value obtained by dividing the value of the fifth period by the value of the fifth period, the value obtained by dividing the diameter value of the plurality of through holes regularly arranged in the sixth period by the value of the sixth period, the A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in seven periods by the value of the seventh period, and the diameter of the plurality of through-holes regularly arranged in the eighth period is divided by the value of the eighth period is 0.5 or more and 0.9 or less.

(Item B14)
The infrared sensor according to item B1,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
the first domain comprises a plurality of first subdomains regularly arranged in a first period;
the second domain comprises a plurality of second subdomains regularly arranged in a second period;
the third domain comprises a plurality of third subdomains regularly arranged in a third period;
the fourth domain comprises a plurality of fourth subdomains regularly arranged in a fourth period;
Each of the plurality of first subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a fifth period,
Each of the plurality of second subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a sixth period,
Each of the plurality of third subdomains is formed of a phononic crystal having a plurality of through holes regularly arranged in a seventh period, and each of the plurality of fourth subdomains is formed of a It is formed from a phononic crystal having a plurality of through-holes regularly arranged at intervals.

(Item B15)
The infrared sensor according to item B14,
the bolometer first beam further includes a fifth domain;
the second bolometer beam further includes a sixth domain;
The Peltier first beam further includes a seventh domain,
The Peltier second beam further includes an eighth domain,
The fifth domain comprises a plurality of fifth subdomains regularly arranged in a ninth period,
The sixth domain comprises a plurality of sixth subdomains regularly arranged in a tenth period,
The seventh domain comprises a plurality of seventh subdomains regularly arranged in an 11th period,
The eighth domain comprises a plurality of eighth subdomains regularly arranged in a 12th period,
Each of the plurality of fifth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 13th period,
Each of the plurality of sixth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 14th period,
Each of the plurality of seventh subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 15th period,
Each of the plurality of eighth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 16th period,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
The value of the ninth period is greater than the value of the first period,
the value of the tenth period is greater than the value of the second period;
The value of the eleventh period is greater than the value of the third period, and
The value of the 12th period is greater than the value of the 4th period.

(Item B16)
A method of cooling a bolometric infrared receiver of an infrared sensor comprising:
(a) providing the infrared sensor comprising:
an infrared sensor,
base board,
the bolometer infrared receiver, and a Peltier element,
a first post extending away from the base substrate; a second post extending away from the base substrate;
a third pillar extending away from the base substrate; and a fourth pillar extending away from the base substrate;
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a bolometer first beam formed from a first insulating material;
a second bolometer beam formed from a second insulating material;
a bolometer first thin film formed on the bolometer first beam; and a bolometer second thin film formed on the bolometer second beam;
is equipped with
The bolometer first thin film is electrically connected to the variable resistance layer,
The bolometer second thin film is electrically connected to the variable resistance layer,
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
The Peltier element is
a Peltier first beam formed from a third insulating material;
a Peltier second beam formed from a fourth insulating material;
a Peltier first thin film formed on the Peltier first beam; and a Peltier second thin film formed on the Peltier second beam;
is equipped with
The Peltier first thin film is made of a p-type semiconductor material,
The Peltier first thin film is made of an n-type semiconductor material,
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
One end of the first bolometer beam and one end of the first bolometer thin film are connected to the first support,
One end of the second bolometer beam and one end of the second bolometer thin film are connected to the second support,
one end of the first Peltier beam and one end of the first Peltier thin film are connected to the third support,
one end of the second Peltier beam and one end of the second Peltier thin film are connected to the fourth support,
The bolometer infrared receiver, the first bolometer beam, the first bolometer thin film, the second bolometer beam, and the second bolometer thin film are suspended above the base substrate by the first support and the second support. and
The Peltier element, the first Peltier beam, the first Peltier thin film, the second Peltier beam, and the second Peltier thin film are suspended above the base substrate by the third support and the fourth support. ,
The bolometer first thin film has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The bolometer second thin film has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier thin film has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier thin film is composed of a plurality of regularly arranged through holes a fourth phononic crystal structure,
(b) making the infrared rays incident on the bolometer infrared receiver;
(c) blocking the infrared rays incident on the bolometer infrared receiver; and ( d ) applying a current to the Peltier first thin film and the Peltier first thin film to cool the bolometer infrared receiver. .

(Item B17)
A method for cooling the bolometer infrared receiver of the infrared sensor according to item B16,
The first phononic crystal structure is provided in a first section between the first support and one end of the variable resistance layer in the first bolometer thin film in plan view,
The second phononic crystal structure is provided in a second section between the second support and the other end of the resistance change layer in the planar view of the second bolometer thin film,
The third phononic crystal structure is provided in a third section between the third support and one end of the variable resistance layer in the Peltier first thin film in plan view,
The fourth phononic crystal structure is provided in a fourth section between the fourth support and the other end of the variable resistance layer in the second Peltier thin film in plan view.

(Item B18)
A method for cooling the bolometer infrared receiver of the infrared sensor according to item B16,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period.

(Item B19)
A method for cooling the bolometer infrared receiver of the infrared sensor according to item B18,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item B20)
A method for cooling the bolometer infrared receiver of the infrared sensor according to item B16,
the other end of the first Peltier thin film is connected to the other end of the second Peltier thin film to form an interface between the first Peltier thin film and the second Peltier thin film;
The interface is thermally connected to the variable resistance layer.

(Item C1)
an infrared sensor,
a base substrate having a recess;
thermopile infrared receiver and Peltier element,
and
here,
The thermopile infrared receiver is
infrared absorbing layer,
a thermopile first beam thermally connected to the infrared absorbing layer and formed from a first p-type semiconductor material; and thermally connected to the infrared absorbing layer and from a first n-type semiconductor material. thermopile second beam being formed;
is equipped with
The Peltier element is sandwiched between the thermopile infrared light receiving portion and the recess,
The infrared rays are applied to the surface on the front side of the thermopile infrared light receiving unit,
said Peltier element comprising a first Peltier beam formed from a second p-type semiconductor material and a second Peltier beam formed from a second n-type semiconductor material;
The Peltier element is in contact with the back surface of the thermopile infrared light receiving unit,
one end of the first thermopile beam, one end of the second thermopile beam, one end of the first Peltier beam, and one end of the second Peltier beam are connected to the base substrate;
The thermopile infrared light receiving portion, the Peltier element, the first thermopile beam, the second thermopile beam, the first Peltier beam, and the second Peltier beam are suspended above the base substrate,
The thermopile first beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The thermopile second beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes and a fourth phononic crystal structure.

(Item C2)
The infrared sensor according to item C1,
The first phononic crystal structure is provided in a first section between one end of the first thermopile beam and one end of the infrared absorbing layer in the first thermopile beam in plan view,
The second phononic crystal structure is provided in a second section between one end of the second thermopile beam and the other end of the infrared absorption layer in the second thermopile beam in plan view,
The third phononic crystal structure is provided in a third section between one end of the first Peltier beam and one end of the infrared absorbing layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between one end of the second Peltier beam and the other end of the infrared absorbing layer in the second Peltier beam in plan view,
Infrared sensor.

(Item C3)
The infrared sensor according to item C1,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period,
Infrared sensor.

(Item C4)
The infrared sensor according to item C3,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item C5)
The infrared sensor according to item C1,
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is sandwiched between the infrared absorbing layer and the recess.

(Item C6)
The infrared sensor according to item C1,
The other end of the first Peltier beam is not connected to the other end of the second Peltier beam,
The first Peltier beam is electrically connected to the second Peltier beam by a first wiring,
The first wiring is sandwiched between the infrared absorption layer and the recess.

(Item C7)
The infrared sensor according to item C5,
In a plan view, the infrared absorbing layer has four regions of equal area,
The interface borders at least two of the regions.

(Item C8)
The infrared sensor according to item C3,
the first thermopile beam, the second thermopile beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
The first domain, the second domain, the third domain, and the fourth domain are the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure, respectively. contains a crystal structure,
the first thermopile beam, the second thermopile beam, the first Peltier beam, and the second Peltier beam each include a fifth domain, a sixth domain, a seventh domain, and an eighth domain;
A fifth phononic crystal structure composed of a plurality of through-holes regularly arranged in a fifth period is formed in the fifth domain,
A sixth phononic crystal structure composed of a plurality of through-holes regularly arranged in a sixth period is formed in the sixth domain,
A seventh phononic crystal structure composed of a plurality of through holes regularly arranged in a seventh period is formed in the seventh domain,
an eighth phononic crystal structure composed of a plurality of through-holes regularly arranged in an eighth period is formed in the eighth domain,
In plan view, the first domain is sandwiched between the fifth domain and the infrared absorbing layer,
In the plan view, the second domain is sandwiched between the sixth domain and the infrared absorbing layer,
In the plan view, the third domain is sandwiched between the seventh domain and the infrared absorbing layer,
In the plan view, the fourth domain is sandwiched between the eighth domain and the infrared absorbing layer,
the value of the fifth period is greater than the value of the first period;
the value of the sixth period is greater than the value of the second period;
The value of the seventh period is greater than the value of the third period, and the value of the eighth period is greater than the value of the fourth period.

(Item C9)
The infrared sensor according to item C8,
In the first domain, between the plurality of through holes regularly arranged in the first period in the first domain, a plurality of through holes regularly arranged in a ninth period different from the first period through holes are formed,
In the second domain, between the plurality of through holes regularly arranged in the second period in the second domain, a plurality of through holes regularly arranged in a tenth period different from the second period through holes are formed,
In the third domain, between the plurality of through holes regularly arranged in the third period in the third domain, a plurality of through holes regularly arranged in an eleventh period different from the third period through holes are formed,
In the fourth domain, between the plurality of through holes regularly arranged in the fourth period in the fourth domain, a plurality of through holes regularly arranged in a 12th period different from the fourth period through holes are formed,
In the fifth domain, between the plurality of through holes regularly arranged in the fifth period in the fifth domain, a plurality of through holes regularly arranged in a thirteenth period different from the fifth period through holes are formed,
In the sixth domain, between the plurality of through-holes regularly arranged in the sixth domain in the sixth period, a plurality of through holes regularly arranged in a 14th period different from the sixth period through holes are formed,
In the seventh domain, between the plurality of through-holes regularly arranged in the seventh period in the seventh domain, a plurality of through holes regularly arranged in a fifteenth period different from the seventh period and in the eighth domain, between the plurality of through-holes regularly arranged in the eighth domain in the eighth period, a period different from the eighth period is formed. A plurality of through holes are formed which are regularly arranged in 16 cycles.

(Item C10)
The infrared sensor according to item C8,
The number of the plurality of through holes regularly arranged in the first period, the number of the plurality of through holes regularly arranged in the second period, the number of the plurality of through holes regularly arranged in the third period number of the plurality of through holes, number of the plurality of through holes regularly arranged in the fourth period, number of the plurality of through holes regularly arranged in the fifth period, in the sixth period the number of the plurality of through-holes regularly arranged, the number of the plurality of through-holes regularly arranged with the seventh period, and the plurality of through-holes regularly arranged with the eighth period is 5 or more.

(Item C11)
The infrared sensor according to item C8,
A unit cell having a periodic structure that constitutes each of the first domain, the second domain, the third domain, the fourth domain, the fifth domain, the sixth domain, the seventh domain, and the eighth domain is either a square lattice, a hexagonal lattice, a rectangular lattice, or a face-centered rectangular lattice.

(Item C12)
The infrared sensor according to item C8,
Each value of the first period, the second period, the third period, the fourth period, the fifth period, the sixth period, the seventh period, and the eighth period is 1 nm or more and 300 nm. It is below.

(Item C13)
The infrared sensor according to item C8,
The value obtained by dividing the diameter value of the plurality of through holes regularly arranged in the first period by the value in the first period, the diameter of the plurality of through holes regularly arranged in the second period A value obtained by dividing the value of the diameter by the value of the second period, a value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the third period by the value of the third period , A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in the fourth period by the value of the fourth period, the diameter of the plurality of through-holes regularly arranged in the fifth period The value obtained by dividing the value of the fifth period by the value of the fifth period, the value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the sixth period by the value of the sixth period, the A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in seven periods by the value of the seventh period, and the diameter of the plurality of through-holes regularly arranged in the eighth period is divided by the value of the eighth period is 0.5 or more and 0.9 or less.

(Item C14)
The infrared sensor according to item C1,
the first thermopile beam, the second thermopile beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
the first domain comprises a plurality of first subdomains regularly arranged in a first period;
the second domain comprises a plurality of second subdomains regularly arranged in a second period;
the third domain comprises a plurality of third subdomains regularly arranged in a third period;
the fourth domain comprises a plurality of fourth subdomains regularly arranged in a fourth period;
Each of the plurality of first subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a fifth period,
Each of the plurality of second subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a sixth period,
Each of the plurality of third subdomains is formed of a phononic crystal having a plurality of through holes regularly arranged in a seventh period, and each of the plurality of fourth subdomains is formed of a It is formed from a phononic crystal having a plurality of through-holes regularly arranged at intervals.

(Item C15)
The infrared sensor according to item C14,
The thermopile first beam further includes a fifth domain,
the thermopile second beam further includes a sixth domain;
The Peltier first beam further includes a seventh domain,
The Peltier second beam further includes an eighth domain,
The fifth domain comprises a plurality of fifth subdomains regularly arranged in a ninth period,
The sixth domain comprises a plurality of sixth subdomains regularly arranged in a tenth period,
The seventh domain comprises a plurality of seventh subdomains regularly arranged in an 11th period,
The eighth domain comprises a plurality of eighth subdomains regularly arranged in a 12th period,
Each of the plurality of fifth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 13th period,
Each of the plurality of sixth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 14th period,
Each of the plurality of seventh subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 15th period,
Each of the plurality of eighth subdomains is formed from a phononic crystal having a plurality of through-holes regularly arranged in a 16th period,
In plan view, the first domain is sandwiched between the fifth domain and the infrared absorbing layer,
In the plan view, the second domain is sandwiched between the sixth domain and the infrared absorbing layer,
In the plan view, the third domain is sandwiched between the seventh domain and the infrared absorbing layer,
In the plan view, the fourth domain is sandwiched between the eighth domain and the infrared absorbing layer,
The value of the ninth period is greater than the value of the first period,
the value of the tenth period is greater than the value of the second period;
The value of the eleventh period is greater than the value of the third period, and
The value of the 12th period is greater than the value of the 4th period.

(Item C16)
A method of cooling a thermopile infrared receiver of an infrared sensor comprising:
(a) providing the infrared sensor comprising:
a base substrate having a recess;
the thermopile infrared receiver, and a Peltier element,
and
here,
The thermopile infrared receiver is
infrared absorbing layer,
a thermopile first beam thermally connected to the infrared absorbing layer and formed from a first p-type semiconductor material; and thermally connected to the infrared absorbing layer and from a first n-type semiconductor material. thermopile second beam being formed;
is equipped with
The Peltier element is sandwiched between the thermopile infrared light receiving portion and the recess,
Infrared rays are applied to the surface on the front side of the thermopile infrared light receiving part,
said Peltier element comprising a first Peltier beam formed from a second p-type semiconductor material and a second Peltier beam formed from a second n-type semiconductor material;
The Peltier element is in contact with the back surface of the thermopile infrared light receiving unit,
one end of the first thermopile beam, one end of the second thermopile beam, one end of the first Peltier beam, and one end of the second Peltier beam are connected to the base substrate;
The thermopile infrared light receiving portion, the Peltier element, the first thermopile beam, the second thermopile beam, the first Peltier beam, and the second Peltier beam are suspended above the base substrate,
The thermopile first beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The thermopile second beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes and a quaternary phononic crystal structure.
(b) making the infrared rays incident on the thermopile infrared receiver;
(c) blocking the infrared rays incident on the thermopile infrared receiver; and ( d ) applying a current to the first Peltier beam and the second Peltier beam to cool the thermopile infrared receiver. .

(Item C17)
A method for cooling the thermopile infrared receiving part of the infrared sensor according to item C16,
The first phononic crystal structure is provided in a first section between one end of the first thermopile beam and one end of the variable resistance layer in the first thermopile beam in plan view,
The second phononic crystal structure is provided in a second section between one end of the second thermopile beam and the other end of the variable resistance layer in the second thermopile beam in plan view,
The third phononic crystal structure is provided in a third section between one end of the first Peltier beam and one end of the variable resistance layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between one end of the second Peltier beam and the other end of the variable resistance layer in the second Peltier beam in plan view.

(Item C18)
A method for cooling the thermopile infrared receiving part of the infrared sensor according to item C16,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period.

(Item C19)
A method for cooling the thermopile infrared receiving part of the infrared sensor according to item C18,
Each value of the first period, the second period, the third period, and the fourth period is equal.

(Item C20)
A method for cooling the thermopile infrared receiving part of the infrared sensor according to item C16,
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is sandwiched between the variable resistance layer and the recess.

1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J infrared sensor 11 base substrate 12A, 12B (bolometer) infrared light receiving portion 12C (thermopile) infrared light receiving portion 12P Peltier element 13a, 13b electrode pad 14a, 14b, 14c, 14d Second wirings 15a, 15b Electrode pads 16, 16a, 16b, 16c, 16d, 16e, 16f, 16g, 16h, 16i, 16j, 16k, 16l, 16m, 16n First wirings 17, 17a, 17b Insulating film 18 Through hole 19 Unit lattice 21a, 21b, 21c Phononic domain 21P Peltier element 25a, 25b First periodic structure 26a, 26b Second periodic structure 27a, 27b Micro periodic structure 28a, 28b Subphononic domain 29a, 29b Macro Periodic structure 31 Upper surface 32 Concave portions 34a, 34b, 34c, 34d Posts 91, 92, 93 Phononic domains 101a, 101b, 101c, 101d Beams 102a, 102b, 102c, 102d, 102e, 102f, 102g, 102h, 102i, 102j , 102k, 102l beam 103 interface 104a, 104b beam 111 wafer 111a, 111b, 112a, 112b section 201 variable resistance layer 202 insulating film 203 infrared absorbing layer 222 insulating layer 301a, 301b, 302a, 302b thin film
3 11a, 311b, 312a, 312b section 401a, 401b insulating part 404 sacrificial layer 501 Si layer 502 SiO2 layer 503 Si layer 504 sacrificial layer 505a, 505b beam layer 1011a, 1011b, 1021a, 1021b region

Claims (20)

an infrared sensor,
a base substrate having a recess;
bolometer infrared receiver and Peltier element,
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a first bolometer beam electrically connected to the variable resistance layer; and a second bolometer beam electrically connected to the variable resistance layer;
is equipped with
The Peltier element is sandwiched between the bolometer infrared light receiving portion and the recess,
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
said Peltier element comprising a first Peltier beam made of a p-type semiconductor material and a second Peltier beam made of an n-type semiconductor material;
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
one end of the first bolometer beam, one end of the second bolometer beam, one end of the first Peltier beam, and one end of the second Peltier beam are connected to the base substrate;
The bolometer infrared light receiving unit, the Peltier element, the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam are suspended above the base substrate,
The first bolometer beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The second bolometer beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes comprising a fourth phononic crystal structure
Infrared sensor. The infrared sensor according to claim 1,
The first phononic crystal structure is provided in a first section between one end of the first bolometer beam and one end of the variable resistance layer in the first bolometer beam in plan view,
The second phononic crystal structure is provided in a second section between one end of the second bolometer beam and the other end of the variable resistance layer in the second bolometer beam in plan view,
The third phononic crystal structure is provided in a third section between one end of the first Peltier beam and one end of the variable resistance layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between one end of the second Peltier beam and the other end of the variable resistance layer in the second Peltier beam in plan view. The infrared sensor according to claim 1,
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period. An infrared sensor according to claim 3,
Each value of the first period, the second period, the third period, and the fourth period is equal. The infrared sensor according to claim 1,
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is sandwiched between the variable resistance layer and the recess. The infrared sensor according to claim 1,
The other end of the first Peltier beam is not connected to the other end of the second Peltier beam,
The first Peltier beam is electrically connected to the second Peltier beam by a first wiring,
The first wiring is sandwiched between the variable resistance layer and the recess. An infrared sensor according to claim 5,
In plan view, the variable resistance layer has four regions of equal area,
The interface borders at least two of the regions. The infrared sensor according to claim 3,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
The first domain, the second domain, the third domain, and the fourth domain are the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure, respectively. contains a crystal structure,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a fifth domain, a sixth domain, a seventh domain, and an eighth domain;
A fifth phononic crystal structure composed of a plurality of through-holes regularly arranged in a fifth period is formed in the fifth domain,
A sixth phononic crystal structure composed of a plurality of through-holes regularly arranged in a sixth period is formed in the sixth domain,
A seventh phononic crystal structure composed of a plurality of through holes regularly arranged in a seventh period is formed in the seventh domain,
an eighth phononic crystal structure composed of a plurality of through-holes regularly arranged in an eighth period is formed in the eighth domain,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
the value of the fifth period is greater than the value of the first period;
the value of the sixth period is greater than the value of the second period;
The value of the seventh period is greater than the value of the third period, and the value of the eighth period is greater than the value of the fourth period. An infrared sensor according to claim 8,
In the first domain, between the plurality of through holes regularly arranged in the first period in the first domain, a plurality of through holes regularly arranged in a ninth period different from the first period through holes are formed,
In the second domain, between the plurality of through holes regularly arranged in the second period in the second domain, a plurality of through holes regularly arranged in a tenth period different from the second period through holes are formed,
In the third domain, between the plurality of through holes regularly arranged in the third period in the third domain, a plurality of through holes regularly arranged in an eleventh period different from the third period through holes are formed,
In the fourth domain, between the plurality of through holes regularly arranged in the fourth period in the fourth domain, a plurality of through holes regularly arranged in a 12th period different from the fourth period through holes are formed,
In the fifth domain, between the plurality of through holes regularly arranged in the fifth period in the fifth domain, a plurality of through holes regularly arranged in a thirteenth period different from the fifth period through holes are formed,
In the sixth domain, between the plurality of through-holes regularly arranged in the sixth domain in the sixth period, a plurality of through holes regularly arranged in a 14th period different from the sixth period through holes are formed,
In the seventh domain, between the plurality of through-holes regularly arranged in the seventh period in the seventh domain, a plurality of through holes regularly arranged in a fifteenth period different from the seventh period and in the eighth domain, between the plurality of through-holes regularly arranged in the eighth domain in the eighth period, a period different from the eighth period is formed. A plurality of through holes arranged regularly in 16 cycles are formed. The infrared sensor according to claim 8,
The number of the plurality of through holes regularly arranged in the first period, the number of the plurality of through holes regularly arranged in the second period, the number of the plurality of through holes regularly arranged in the third period number of the plurality of through holes, number of the plurality of through holes regularly arranged in the fourth period, number of the plurality of through holes regularly arranged in the fifth period, in the sixth period the number of the plurality of through-holes regularly arranged, the number of the plurality of through-holes regularly arranged with the seventh period, and the plurality of through-holes regularly arranged with the eighth period is 5 or more. An infrared sensor according to claim 8,
A unit cell having a periodic structure that constitutes each of the first domain, the second domain, the third domain, the fourth domain, the fifth domain, the sixth domain, the seventh domain, and the eighth domain is either a square lattice, a hexagonal lattice, a rectangular lattice, or a face-centered rectangular lattice. An infrared sensor according to claim 8,
Each value of the first period, the second period, the third period, the fourth period, the fifth period, the sixth period, the seventh period, and the eighth period is 1 nm or more and 300 nm. It is below. An infrared sensor according to claim 8,
The value obtained by dividing the diameter value of the plurality of through holes regularly arranged in the first period by the value in the first period, the diameter of the plurality of through holes regularly arranged in the second period A value obtained by dividing the value of the diameter by the value of the second period, a value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the third period by the value of the third period , A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in the fourth period by the value of the fourth period, the diameter of the plurality of through-holes regularly arranged in the fifth period The value obtained by dividing the value of the fifth period by the value of the fifth period, the value obtained by dividing the value of the diameter of the plurality of through holes regularly arranged in the sixth period by the value of the sixth period, the A value obtained by dividing the value of the diameter of the plurality of through-holes regularly arranged in seven periods by the value of the seventh period, and the diameter of the plurality of through-holes regularly arranged in the eighth period is divided by the value of the eighth period is 0.5 or more and 0.9 or less. The infrared sensor according to claim 1,
the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam each include a first domain, a second domain, a third domain, and a fourth domain;
the first domain comprises a plurality of first subdomains regularly arranged in a first period;
the second domain comprises a plurality of second subdomains regularly arranged in a second period;
the third domain comprises a plurality of third subdomains regularly arranged in a third period;
the fourth domain comprises a plurality of fourth subdomains regularly arranged in a fourth period;
Each of the plurality of first subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a fifth period,
Each of the plurality of second subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a sixth period,
Each of the plurality of third subdomains is formed of a phononic crystal having a plurality of through holes regularly arranged in a seventh period, and each of the plurality of fourth subdomains is formed of a It is formed from a phononic crystal having a plurality of through-holes regularly arranged at intervals. An infrared sensor according to claim 14,
the bolometer first beam further includes a fifth domain;
the second bolometer beam further includes a sixth domain;
The Peltier first beam further includes a seventh domain,
The Peltier second beam further includes an eighth domain,
The fifth domain comprises a plurality of fifth subdomains regularly arranged in a ninth period,
The sixth domain comprises a plurality of sixth subdomains regularly arranged in a tenth period,
The seventh domain comprises a plurality of seventh subdomains regularly arranged in an 11th period,
The eighth domain comprises a plurality of eighth subdomains regularly arranged in a 12th period,
Each of the plurality of fifth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 13th period,
Each of the plurality of sixth subdomains is formed from a phononic crystal having a plurality of through-holes regularly arranged in a 14th period,
Each of the plurality of seventh subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 15th period,
Each of the plurality of eighth subdomains is formed of a phononic crystal having a plurality of through-holes regularly arranged in a 16th period,
In plan view, the first domain is sandwiched between the fifth domain and the variable resistance layer,
In the planar view, the second domain is sandwiched between the sixth domain and the variable resistance layer,
In the plan view, the third domain is sandwiched between the seventh domain and the variable resistance layer,
In the planar view, the fourth domain is sandwiched between the eighth domain and the variable resistance layer,
The value of the ninth period is greater than the value of the first period,
the value of the tenth period is greater than the value of the second period;
The value of the eleventh period is greater than the value of the third period, and
The value of the 12th period is greater than the value of the 4th period. A method of cooling a bolometric infrared receiver of an infrared sensor comprising:
(a) providing the infrared sensor comprising:
a base substrate having a recess;
the bolometer infrared receiver, and a Peltier element,
and
here,
The bolometer infrared receiver is
resistance change layer whose resistance changes by absorbing infrared rays;
a first bolometer beam electrically connected to the variable resistance layer; and a second bolometer beam electrically connected to the variable resistance layer;
is equipped with
The Peltier element is sandwiched between the bolometer infrared light receiving portion and the recess,
The infrared rays are irradiated onto the surface on the front side of the bolometer infrared light receiving unit,
The Peltier element comprises a first Peltier beam made of p-type semiconductor material and a second Peltier beam made of n-type semiconductor material,
The Peltier element is in contact with the back surface of the bolometer infrared light receiving unit,
one end of the first bolometer beam, one end of the second bolometer beam, one end of the first Peltier beam, and one end of the second Peltier beam are connected to the base substrate;
The bolometer infrared light receiving unit, the Peltier element, the first bolometer beam, the second bolometer beam, the first Peltier beam, and the second Peltier beam are suspended above the base substrate,
The first bolometer beam has a first phononic crystal structure composed of a plurality of regularly arranged through holes,
The second bolometer beam has a second phononic crystal structure composed of a plurality of regularly arranged through holes,
The first Peltier beam has a third phononic crystal structure composed of a plurality of regularly arranged through holes, and the second Peltier beam is composed of a plurality of regularly arranged through holes comprising a fourth phononic crystal structure,
(b) making the infrared rays incident on the bolometer infrared receiver;
(c) blocking the infrared rays incident on the bolometer infrared receiver; and ( d ) applying a current to the first Peltier beam and the second Peltier beam to cool the bolometer infrared receiver. . 17. A method for cooling a bolometric infrared receiver of an infrared sensor according to claim 16, comprising:
The first phononic crystal structure is provided in a first section between one end of the first bolometer beam and one end of the variable resistance layer in the first bolometer beam in plan view,
The second phononic crystal structure is provided in a second section between one end of the second bolometer beam and the other end of the variable resistance layer in the second bolometer beam in plan view,
The third phononic crystal structure is provided in a third section between one end of the first Peltier beam and one end of the variable resistance layer in the first Peltier beam in plan view,
The fourth phononic crystal structure is provided in a fourth section between one end of the second Peltier beam and the other end of the variable resistance layer in the second Peltier beam in plan view. 17. A method for cooling a bolometric infrared receiver of an infrared sensor according to claim 16, comprising:
The plurality of through-holes of the first phononic crystal structure are regularly arranged in a first period,
The plurality of through-holes of the second phononic crystal structure are regularly arranged in a second period,
The plurality of through-holes of the third phononic crystal structure are regularly arranged in a third period,
The plurality of through-holes of the fourth phononic crystal structure are regularly arranged in a fourth period. A method for cooling a bolometric infrared receiver of an infrared sensor according to claim 18, comprising:
Each value of the first period, the second period, the third period, and the fourth period is equal. A method for cooling a bolometric infrared receiver of an infrared sensor according to claim 16, comprising:
the other end of the first Peltier beam is connected to the other end of the second Peltier beam to form an interface between the first Peltier beam and the second Peltier beam;
The interface is sandwiched between the variable resistance layer and the recess.

Images