JP6831860B2 - Substrate sealing structure, display device and its manufacturing method - Google Patents

Description

The present invention relates to a substrate sealing structure, a composite type (hybrid type) display device in which a reflective liquid crystal display element and an organic EL display element are combined, and a method for manufacturing the same.

Electronic devices that need to be shielded from the outside air, such as organic compounds that easily deteriorate due to moisture and organic EL light-emitting devices that use electrodes whose performance tends to deteriorate due to oxidation, prevent the ingress of moisture and oxygen. Therefore, it is necessary to prevent the performance deterioration of the element. Therefore, for example, in Patent Document 1, two substrates sandwiching a light emitting element are bonded together by laser light using a glass frit. However, in Patent Document 1, as shown in FIG. 5A, an internal filler 86 is filled between the light emitting element 80 and the light transmitting layer 85, and the sealant portion 87 emits light so that the internal filler 86 does not flow out. The element substrate 89a and the sealing substrate 89b are joined by surrounding the element 80 and the internal filler 86 and forming a sealant 88 made of glass frit on the outer periphery of the sealant portion 87 in contact with the sealant portion 87. There is. The light emitting element 80 is composed of a first electrode 81, an organic layer 82, a second electrode 83, and a protective film 84 that covers the periphery thereof. A resin such as an acrylic resin or an epoxy resin that is cured by UV or heat is used for both the internal filler 86 and the sealant portion 87.

Further, in Patent Document 2, as shown in FIG. 5B, a second seal line 94 is formed on the outside of the first seal line 93 that seals the first substrate 91 and the second substrate 92, and the second seal line 94 is formed. It is formed in the seal structure of. It is stated that the second seal line 94 can be cured by laser light using an inorganic material. However, as shown in FIG. 5B, the second seal line 94 is formed on the first substrate 91, on the side surface of the second substrate 92, and on the second substrate 92 by making the sizes of the first substrate 91 and the second substrate 92 different. It is formed so as to be in contact with one seal line 93. In FIG. 5B, the electronic elements enclosed by both substrates 91 and 92 are omitted.

JP-A-2010-103112 Japanese Unexamined Patent Publication No. 2008-21770

As described above, the conventional sealing between the first substrate and the second substrate is formed by a double seal, but the sealant 88 and the sealant portion 87 shown in FIG. 5A, or the third substrate shown in FIG. 5B. The first seal line 93 and the second seal line 94 are in contact with each other. When the two sealants are in contact with each other in this way, when a glass frit is used for the sealant 88 or the second seal line 94, the glass frit is adhered by heating with a laser beam at 350 to 600 ° C. The temperature rises to a degree or higher. Therefore, the temperature of the sealant portion 87 or the first seal line 93 rises, and the temperature of a part of the light emitting element 80 in contact with or in the vicinity of the sealant portion 87 or the first seal line 93 rises, and the element characteristics are deteriorated. It is expected to deteriorate.

Further, when the temperature of the sealant portion 87 or the first seal line 93 rises, the temperature of the heat-cured or ultraviolet-cured sealant portion 87 or the first seal line 93 becomes higher than that at the time of curing by thermosetting or ultraviolet curing, and gas is released. It is thought that it will occur. The gas generated at this point remains around the light emitting element 80 as it is, and there is a concern that the light emitting element 80 may be adversely affected.

The present invention has been made to solve such a problem, and when sealing while forming a substrate sealing structure capable of protecting an electronic element formed between two substrates from moisture and oxygen. It is an object of the present invention to provide a sealing structure capable of preventing deterioration of an electronic element due to the heat of the above.

Another object of the present invention is an organic EL from the infiltration of moisture and oxygen, even in a composite display device including both a liquid crystal display element and an organic EL display element, while suppressing deterioration of any element due to heat. It is an object of the present invention to provide a display device having a seal structure capable of protecting a display element and a method for manufacturing the display device.

The sealing structure of the first embodiment of the present invention comprises a first substrate and a second substrate arranged to face each other, an electronic element formed between the first substrate and the second substrate, and the electronic element. A sealant that seals the first substrate and the second substrate on the outer periphery of the substrate, and the sealant contains a low melting point glass material and is adhered to each of the first substrate and the second substrate. A partition wall formed so as to surround the outer periphery of the electronic element is arranged between the sealant and the electronic element, and between the first substrate and the second substrate, and the sealant and the partition wall are arranged. Is separated from.

The display device of the second embodiment of the present invention includes a TFT substrate having a driving element formed for each pixel of the display screen and a first insulating layer having a flat surface on the driving element, and one of the TFT substrates. In the first region of the pixel, the reflective electrode for the liquid crystal display element formed above the first insulating layer and the one pixel adjacent to the first region on the first insulating layer of the TFT substrate. It has an organic EL display element formed in the second region and having a first electrode, an organic layer, a second electrode and a coating layer, and a counter electrode facing the reflecting electrode, and is arranged facing the TFT substrate. It comprises a facing substrate, a liquid crystal layer filled between the TFT substrate and the facing substrate, and a sealing agent in which the TFT substrate and the facing substrate are bonded together, and the sealing agent is a low melting point glass material. Including, it is adhered to each of the TFT substrate and the facing substrate, and a partition wall is arranged between the sealing agent and the liquid crystal layer and between the TFT substrate and the facing substrate. The sealant and the partition wall are separated from each other.

The method for manufacturing the display device according to the third embodiment of the present invention includes at least a step of forming a TFT substrate on which a driving element is formed, and a reflective electrode for a liquid crystal display element and an organic EL display element above or on the surface of the TFT substrate. The step of forming the counter substrate having the counter electrode for the liquid crystal display element, and the step of forming the counter electrode for the liquid crystal display element and the organic EL display element in either the TFT substrate or the counter substrate. In the step of arranging the partition wall material on the peripheral edge of the element forming region to be formed, and in either the TFT substrate or the facing substrate, the partition wall material is separated from the partition wall material at a portion of the partition wall material opposite to the element forming region. The step of arranging the sealant material, the step of dropping the liquid crystal composition into the element forming region surrounded by the partition wall material, the step of superimposing the TFT substrate and the facing substrate, and the TFT by the sealant material. A step of adhering the substrate and the opposing substrate is provided, a material containing low melting point glass is used as the sealing agent material, and the sealing agent material is adhered to the TFT substrate and the opposing substrate by irradiation with laser light. doing.

According to the embodiment of the present invention, instead of the idea of double sealing, the partition between the two substrates is completely sealed with a sealing agent containing low melting point glass, and the partition is separated from the sealing agent and between the electronic element. Is formed, even when the sealant is adhered to the substrate by laser light, the heat generated at the time of adhesion is blocked by the partition wall, and the electronic element is protected. Further, since the sealant and the partition wall are separated from each other, the temperature of the partition wall itself does not rise so much, and gas is hardly generated from the partition wall.

It is sectional drawing of the sealing structure of 1st Embodiment of this invention. It is sectional drawing of the display device of the 2nd Embodiment of this invention. It is a top view of the state which the partition wall material and the sealant material were formed by printing on the surface of a substrate in a manufacturing process. It is a top view explaining the method of fixing a glass ribbon as a sealing material in a manufacturing process. It is a top view which shows another example of fixing a glass ribbon as a sealing material in a manufacturing process. It is a flowchart which shows the manufacturing process of the 3rd Embodiment of this invention. It is sectional drawing which shows an example of the conventional sealing structure. It is sectional drawing which shows the other example of the conventional sealing structure.

(First Embodiment: Sealing structure of substrate)
Next, the sealing structure of the substrate according to the first embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, the sealing structure 100 of the first embodiment of the present invention includes a first substrate 10 and a second substrate 20 arranged to face each other, and the first substrate 10 and the second substrate 20 thereof. It includes an electronic element 30 formed between the two, and a sealing agent 50 that seals the first substrate 10 and the second substrate 20 on the outer periphery of the electronic element 30. In the present embodiment, the sealant 50 contains a low melting point glass material and is adhered to each of the first substrate 10 and the second substrate 20, between the sealant 50 and the electronic element 30, and the first substrate. A partition wall 60 formed so as to surround the outer periphery of the electronic element 30 is arranged between the 10 and the second substrate 20, and the sealant 50 and the partition wall 60 are separated from each other. The substrate sealing structure is a general term for electronic devices in which an electronic element 30 or the like is arranged between two substrates and the periphery thereof is sealed by the structure of the present embodiment.

Further, the electronic element 30 of the "bulkhead 60 formed so as to surround the outer periphery of the electronic element 30" means a group of electronic elements constituting the electronic device. For example, if the electronic device is a lighting device, the lighting device. It means one or a plurality of organic EL light emitting elements (hereinafter, also simply referred to as OLEDs) constituting the above, and if the electronic device is a display device, a group of electronic elements such as a plurality of OLEDs constituting each pixel is used. means. When a plurality of electronic devices are manufactured at once on a large-sized substrate, a partition wall 60 and a sealant 50 are formed around the electronic element 30 for each electronic device.

The first substrate 10 and the second substrate 20 are not particularly limited as long as they are airtight. An insulating substrate, a semiconductor substrate, or a conductive substrate may be used. When an electronic element 30 (including an electrode or the like as a component thereof) is formed on the surface of one of the substrates, an insulating film is formed on the surface of the semiconductor substrate or the conductive substrate even when the insulating substrate is preferable. Therefore, a semiconductor substrate or a conductive substrate can be used. Further, a rigid substrate or a flexible substrate may be used. Further, the first substrate 10 and the second substrate 20 may be a combination of different materials, for example, a combination of a semiconductor substrate and an insulating substrate. In the case of a display device or a light emitting device (lighting device), a resin film such as a glass substrate or polyimide can be used. Although the first substrate 10 and the second substrate 20 are shown in a simple single structure in FIG. 1, an element such as a driving element (not shown) may be formed.

The electronic element 30 is not particularly limited, but the sealing structure 100 of the substrate of the present embodiment is particularly effective in the case of an electronic element 30 such as an OLED in which a material that is easily deteriorated by moisture or oxygen is used. .. It is also effective for electronic devices that need to enclose liquid crystals or liquids, such as liquid crystal display elements and dye-sensitized solar cells. Further, the sealing structure 100 of the substrate may include two or more electronic elements 30 like a hybrid type display device including a liquid crystal display element (hereinafter, also simply referred to as LCD) and an OLED described later. Good.

In the example shown in FIG. 1, the OLED 30a is formed as an electronic element 30 on the first substrate 10 made of glass. That is, an insulating bank 32 is formed so as to surround the periphery of the first electrode 31, and an organic layer 33, a second electrode 34, and a coating layer (TFE; Thin Film Encapsulation) 35 are formed on the first electrode 31. It is formed. In the example shown in FIG. 1, for simplification, the OLED 30a is shown with a structure of only the main part, but it may have the same structure as the OLED 30a described in the second embodiment described later, and the details will be described later. Will be done.

The sealing agent 50 seals the first substrate 10 and the second substrate 20 in an airtight manner so that the electronic element 30 arranged inside the first substrate 10 and the second substrate 20 are not deteriorated by moisture, oxygen, or the like. Therefore, glass materials are used instead of resins such as epoxy resins that easily permeate moisture. If the width (thickness) x of the sealant 50 is about 0.05 mm or more and 2.0 mm or less, there is no problem in airtight sealing. On the other hand, since the electronic element 30 is enclosed between the first substrate 10 and the second substrate 20, the temperature is excessive when the sealing agent 50 is adhered to the first and second substrates 10 and 20 with glass or the like. I can't raise it. Therefore, low melting point glass having a low softening point (so-called rubber state temperature) is used.

Low-melting-point glass is a glass in which a low-melting-point oxide is mixed to lower the temperature of the softening point, and is generally a softening point having a temperature of about 350 to 600 ° C. or higher. In the present embodiment, since the substrate on which the electronic element 30 is formed is joined, glass having a softening point as low as possible is preferable. From that point of view, for example, vanadium-based low melting point glass can be used. The vanadium-based low melting point glass is mainly composed of V ₂ O ₅ -P ₂ O ₅ -TeO _2- Fe ₂ O ₃ and has a softening point of about 370 ° C. That is, it is softened by heating to about 370 to 400 ° C., is brought into close contact with the substrate, and then cooled to solidify and adhere. This vanadium-based low-melting point glass has high light absorption in the visible to infrared region, and can be locally heated and bonded by laser light. However, even with low melting point glass, the heat resistant temperature of the electronic element 30 is generally lower. Therefore, it is necessary to block the heat generated when the sealant 50 is adhered so as not to affect the various elements formed on the substrate by heat.

That is, although the melting point is low, the temperature of the glass material rises to about 400 ° C., so that the sealant portion 87 and the sealant 88 or the first seal line 93 and the second seal are shown as shown in FIGS. 5A to 5B described above. When the line 94 is in contact with the sealant 88, the heat when adhering the sealant 88 or the second seal line 94 is easily transferred to the sealant portion 87 or the first seal line 93. Then, the temperature of the portion of the light emitting element 80 that comes into contact with or is close to the sealant portion 87 or the first seal line 93 easily rises, which causes deterioration of performance. Further, if a resin is used for the sealant portion 87 or the like, gas is generated from the resin itself, and there is a risk that the gas is sealed between the substrates. Therefore, in the present embodiment, as will be described later, the electronic element 30 and the sealant 50 are prevented so that heat is not directly conducted to a part of the electronic element 30 when the low melting point glass (seal agent 50) is adhered. And are isolated.

This low melting point glass is made into a paste by, for example, a binder containing an organic solvent as a fine powdered glass frit. As shown in FIG. 3A, for example, the sealant material 51 is applied to a predetermined portion of the substrate 10 and then cured to form the sealant 50. In FIG. 3A, a partition material 61 (inorganic material paste or the like) described later is also shown, and a sealant material 51 is formed on the outer periphery of the partition material 61 by screen printing or a dispenser at a distance from the partition material 61. obtain. The sealant material 51 is applied to a predetermined portion of either the first substrate 10 or the second substrate 20. The predetermined portion is a portion of the outer periphery of the partition wall material 61 formed on the peripheral edge of the element forming region A (see FIG. 3A) of the electronic element 30 and having a predetermined distance z from the partition wall material 61. Then, after the other substrates are aligned and overlapped, the sealant material 51 is adhered to each substrate by irradiating the laser beam to raise the temperature to a temperature equal to or higher than the softening point. The substrate on which the sealant material 51 and the partition wall material 61 are formed is not limited to the substrate on which the electronic element 30 is formed. The sealant material 51 and the partition wall material 61 may be formed around a region in which the element formation region A of the electronic element 30 is projected (projected) on the other substrate. Further, the sealant material 51 and the partition wall material 61 may be formed on different substrates.

As the laser light used for this adhesion, if the low melting point glass is the above-mentioned material, various laser light sources can be used because it has high light absorption in the visible light to infrared region. Therefore, for example, a commonly used CO ₂ laser (wavelength: 10.6 μm) can be used. By using CO ₂ laser light with a wavelength that is almost the same as the distance between the substrates that enclose the OLED or LCD (cell gap: about 5 to 10 μm), the entire sealant 50 can be softened, and the entire fine powder can be softened. It becomes a softened state and becomes a solidified body without voids between fine powders.

The sealant material 51 does not have to be a paste of low melting point glass, and may be, for example, a glass ribbon 51b (see FIG. 3B). A glass ribbon 51b may be attached to one of the first or second substrates 10 and 20, and the two substrates may be overlapped and then joined by irradiation with a laser beam. In this case, the glass ribbon 51b can be formed by directly pouring the molten glass into a mold or the like, or by molding and solidifying the above-mentioned glass frit paste. When forming a ribbon from this paste, by evaporating the solvent when forming the ribbon, the glass ribbon in a porous state can be softened into a ribbon having no voids, or the ribbon has voids. As described above, by sandwiching the ribbon between two substrates and then putting it in a softened state, the ribbon can be adhered to the substrate at the same time as the voids disappear. From the viewpoint that gas is not sealed inside the sealant 50, a glass ribbon 51b having no voids is preferable.

When the glass ribbon 51b having no voids (not porous) is joined to the substrate, it is not necessary to soften the entire glass ribbon 51b, and only the joint portion with the substrate needs to be softened. However, there is no problem even if the entire glass ribbon 51b is softened and then solidified. This is because there are no voids originally, so no gas is generated even in a softened state. Therefore, it can be adhered as in the case of softening the glass frit without generating gas.

When the sealant 50 is formed from the glass ribbon 51b, the glass ribbon 51b is attached to one of the two substrates, for example, a predetermined portion (seal location) of the first substrate 10 with an adhesive or the like, and the second substrate is attached. After the 20s are overlapped, the sealant 50 and each substrate can be adhered by the irradiation of the laser beam described above. In this case, as shown in FIGS. 3B to 3C, the glass ribbon 51b may be attached to a part (adhesive portion B) without the adhesive adhering to the entire surface thereof.

Specifically, as shown in FIGS. 3B to 3C, the seal portion is divided into a plurality of locations (for example, each side of a rectangular substrate), and a glass ribbon 51b having a length for each portion is prepared. An adhesive (not shown) may be attached only to the adhesive portion B of one end (example of FIG. 3B) or both ends (example of FIG. 3C) of the glass ribbon 51b to fix the glass ribbon 51b. In this case, each glass ribbon 51b is formed longer by the amount of the adhesive portion B. In this way, as shown in FIGS. 3B to 3C, the adhesive portion B to which the adhesive is attached can be provided on the outside of the seal portion. That is, the adhesive portion B can be arranged outside the portion to be adhered by the laser beam after the first substrate 10 and the second substrate 20 are overlapped with each other. This is because the time from the arrangement of the glass ribbon 51b to the adhesion by irradiation with the laser beam is not so long, so that the risk of the glass ribbon 51b being displaced before the adhesion is very small. Further, when the adhesive is adhered to the entire surface of the glass ribbon 51b, the adhesion between the substrate 10 and the glass ribbon 51b is stable, but the gas generated from the adhesive during the adhesion to the substrate 10 by the laser beam is used as the substrate. You can avoid the risk of encapsulation in between.

The example shown in FIG. 3B is an example in which the adhesive is adhered only to one end of the glass ribbon 51b, and the adhesive portion B to which the adhesive is attached is adhered at a portion opposite to the electronic element 30 of the sealant 50. To. The other end of the glass ribbon 51b is abutted against another glass ribbon 51b, and when bonded, it is joined and integrated with the other glass ribbon. As a result, even if the temperature of the glass ribbon 51b rises during adhesion to the substrate, the gas generated from the adhesive due to the temperature rise is released to the outside of the sealant 50.

In the example shown in FIG. 3C, the glass ribbon 51b is divided into four parts along each side of the rectangular substrate 10 as in the example of FIG. 3B. Each of the divided glass ribbons 51b is slightly lengthened, and both ends are formed into a shape bent by 90 °. As shown in FIG. 3C, the glass ribbon 51b is formed so that the bent portion is located outside the portion to be the sealing agent 50. As a result, as in the example of FIG. 3B, the adhesive portion B adhered by the adhesive is outside the sealant 50, and even if gas is generated from the adhesive during the adhesion by the laser beam, the electronic element 30 It is not enclosed on the side. Moreover, since the glass ribbon 51b is bonded at both ends, the glass ribbon 51b can be bonded very stably.

The partition wall 60 is provided between the sealant 50 and the electronic element 30, and is provided apart from the sealant 50. Therefore, the partition wall 60 is also formed so as to surround the electronic element 30. That is, even if the electronic element 30 has a liquid substance such as a liquid crystal, the liquid substance is isolated so as not to come into direct contact with the sealant 50, and heat conduction when heating for adhesion of the sealant 50 is performed. It is provided to suppress it. Therefore, the heat generated by heating when the sealant 50 is adhered to the first and second substrates 10 and 20 is transferred to the electronic element 30, and the deterioration of the electronic element 30 is suppressed.

That is, the partition wall 60 has a function of blocking heat. For example, when the electronic element 30 contains a liquid crystal material (liquid crystal composition), it is known that the liquid crystal material deteriorates when the temperature rises to 150 ° C. or higher. Moreover, the liquid crystal material is not fixed in a fixed place like a solid, but can flow. Therefore, the partition wall 60 plays a role of preventing the liquid crystal material from coming into contact with the sealing agent 50 to be heated and suppressing heat conduction from the sealing agent 50. Therefore, it is preferable that the partition wall 60 is arranged at a position as far as possible from the sealant 50.

If the thickness y of the partition wall 60 is 0.1 mm or more and 1.0 mm or less, heat conduction can be suppressed. The thicker the thickness, the more difficult it is to transfer the heat to the electronic element 30 even if the temperature of the surface of the partition wall 60 facing the sealant 50 rises due to the radiant heat from the sealant 50, which is preferable. However, if the thickness of the partition wall 60 is increased too much, the size of the structure 100 becomes large, which is contrary to the demand for lightness, thinness, shortness, and miniaturization of electronic devices. Therefore, it is preferable that the dimensions y are such that heat conduction can be suppressed and the mechanical strength between the first and second substrates 10 and 20 can be satisfied.

Further, the distance z between the sealant 50 and the partition wall 60 is preferably 0.5 mm or more. The larger the interval z is, the more preferable it is from the viewpoint of suppressing heat conduction. However, when the interval z is increased, the electronic device becomes large as described above, which goes against the trend of making the electronic device lighter, thinner and shorter. On the other hand, it was confirmed that heat conduction in the space of heat from a heat source heated to about 400 ° C. in a heating time of about several seconds can be almost prevented by leaving an interval of 0.5 mm. Therefore, it is sufficient if the interval z is at most 1 mm.

The purpose of the partition wall 60 is to partition the electronic element 30 so that a part of the electronic element 30 does not come into contact with the sealing agent 50, and to suppress the conduction of heat generated when the sealing agent 50 is adhered to the electronic element 30. It is said. Therefore, since it is not intended to be sealed, it is not necessary to bond it to the substrate. Therefore, it is not necessary to adhere to the substrate with resins such as the sealant portion 87 and the first seal line 93 shown in FIGS. 5A to 5B described above. Rather than using such thermosetting resins, it is preferable to use an inorganic material such as glass or ceramics. That is, in order to obtain a conventional sealing structure, when curing is performed using resins such as thermosetting resins, moisture generated during curing is sealed between the substrates, and even if the outer periphery thereof is covered with glass or the like. Even if it is sealed to prevent the infiltration of water from the outside, the electronic element 30 is always exposed to the water and oxygen generated during thermosetting. Therefore, the thermosetting resin tends to cause deterioration of the electronic element 30.

As the inorganic material that can be used as the partition wall 60, for example, glass, ceramics, metal oxides, metals, semiconductors and the like can be used. As the glass, for example, a glass frit or a glass ribbon of low melting point glass used as the above-mentioned sealing agent 50 can be used. In the case of glass frit, if only the components of the organic material are vaporized after making a paste with a binder, applying it to one substrate by printing, etc., and before overlaying the other substrate, even if a small amount of binder remains, The amount is very small, and a solidified product can be obtained in which the subsequent generation of gas is hardly a problem. Further, in the case of a glass ribbon, it is attached to one of the substrates 10 with an adhesive or the like, and it may contain an organic material of the adhesive, but the amount of the adhesive is very small and the temperature is not raised. Since there is no gas generation, the generation of gas is hardly a problem. Further, a photosensitive glass paste can be applied and cured.

Other inorganic materials such as ceramics and metal oxides can also be mixed with an organic solvent, an adhesive, or the like as a fine powder to form a partition wall 60, similarly to glass frit. In these cases, as described above, non-inorganic materials such as organic solvents and adhesives may be included, but when they are mainly inorganic materials, that is, when 90% or more of the volume is inorganic materials. Can be used as an inorganic material with almost no gas generation.

The partition material 61 can also be formed by combining masking with techniques such as vapor deposition and sputtering. According to this method, the partition wall 60 can be formed only with an inorganic material without using any organic solvent or the like, and various materials can be used.

The partition wall 60 may not be adhered to the other substrate as long as it is adhered to one of the first substrate 10 or the second substrate 20. That is, as described above, the partition wall 60 does not have to have a sealing function. Therefore, for example, even if the partition wall material 61 is a fine powder and is finally porous, the fine pores are very small and the flow of a liquid substance that is a part of the electronic element 30 such as a liquid crystal can be blocked. Just do it. Therefore, the pore size of the porous can vary depending on the type of the electronic element 30, but when the liquid crystal material is included, the liquid crystal material does not flow out if the pore size is 5 μm or less, preferably 1 μm or less. Since it is premised on porous, it is natural that the hole diameter is larger than 0. Even if the liquid crystal material or the like leaks out to some extent and comes into contact with the sealant 50, there is no particular problem.

On the other hand, if the partition wall 60 is a porous body, heat conduction to the electronic element 30 even if the temperature of the surface of the partition wall 60 facing the sealant 50 rises due to heat radiation generated when the sealant 50 is adhered. Is rather preferable because it suppresses. Therefore, if the organic matter is evaporated by making the fine powder into a paste with a binder and then heating and curing it after printing, a partition wall 60 of an inorganic material having fine pores can be obtained. Further, even if the binder is not completely eliminated and remains as an adhesive, if the amount is 10% or less of the total volume, no gas is generated to deteriorate the element characteristics of the electronic element 30. Conceivable. This method can solidify not only glass powder but also fine powders of other inorganic substances such as ceramics and metal oxides.

When the partition wall 60 has a structure in which only one of the first or second substrates 10 and 20 is adhered and not adhered to the other, even if a thermosetting resin or the like is used for the partition wall material 61, the first and second partitions are used. If the substrates 10 and 20 of the above are heat-cured before being superposed, the gas (moisture and oxygen) generated during curing can be released to the outside without being sealed between the two substrates. Therefore, the partition wall 60 is not limited to the inorganic material. In this case, the distance z between the sealant 50 and the partition wall 60 is sufficiently increased so that the partition wall 60 is not heated by the heat generated when the sealant 50 is adhered, for example, 0.7 mm or more and about 1 mm or less. Is preferable.

As described above, the partition wall 60 does not have to be hermetically sealed between the first and second substrates 10 and 20, but if it is adhered to both substrates 10 and 20, the first and second substrates and 20 are not sealed. It is preferable in that the distance between the second substrates 10 and 20 can be accurately maintained and the mechanical strength of the structure 100 can be improved. When adhering to the first and second substrates 10 and 20, the partition material 61 is adhered to one of the substrates by the method described above, or the partition material 61 is applied and then cured. After that, an adhesive is applied to the upper surface of the partition wall material 61, and the first substrate 10 and the second substrate 20 are overlapped with each other. After that, when the sealant material 51 is heated and adhered to both substrates 10 and 20, both substrates 10 and 20 can be adhered by pressure contact. In this case as well, as described above, the amount of the adhesive is very small, 10% or less, as compared with the total amount of the partition wall 60, so that it is hardly affected by the gas generated from the adhesive. Further, bonding can be performed using a bonding resin such as an ultraviolet curable resin, a visible light curable resin, and a delayed curable resin, which will be described later, which does not cause a temperature rise during curing and suppresses the generation of gas.

From the above viewpoint, a bonding resin for sealing two substrates when manufacturing a conventional liquid crystal display device, for example, an epoxy resin, an epoxy acrylate, a urethane acrylate, a silicone resin, or the like can also be used. These materials can be made into an ultraviolet curable resin, a thermosetting resin, or the like depending on the polymerization initiator added. In the case of a thermosetting resin, it can be a delayed curable resin, and heat treatment is performed in a place unrelated to the electronic element 30 (for example, a substrate on which the electronic element 30 is not formed), and then both substrates are overlapped with each other. By applying pressure, they are joined after a while. Therefore, the bonding can be performed without heating to generate gas at the time of bonding. Further, in the case of ultraviolet curing or visible light curing, bonding can be performed with almost no heat generated. When irradiating with ultraviolet rays or visible light, it can also be performed by irradiating with laser light. In these cases as well, as described above, the sealant 50 can be used by sufficiently leaving a space z between the sealant 50 and the partition wall 60 so that the heat generated when the sealant 50 is adhered is not conducted as much as possible.

The above-mentioned ultraviolet curable resin does not need to be heated, and has an advantage that the heat damage to the electronic element 30 such as the enclosed OLED is less than that of the thermosetting resin. Further, the amount of gas generated during curing is small, and the problem of encapsulating the gas generated during curing between the substrates is unlikely to occur. In addition, it can be cured in a shorter time than a thermosetting resin.

Visible light-curable resin has a lower irradiation energy than ultraviolet-curable resin, so the curing time is longer, but it has good light transmission, so it is safe for the human body and the irradiation device is inexpensive. There is.

Since the delayed curable resin is thermosetting, it needs to be heated, but since it does not cure immediately after being heated, it is not necessary to superimpose and heat the two substrates as described above. The partition wall material 61 can be formed on a substrate on which the electronic element 30 is not formed, and after heating, the two substrates can be overlapped and joined. Therefore, there is no thermal damage to the electronic element 30, and it is possible to suppress the generation of gas during curing and encapsulation between the substrates.

According to the substrate sealing structure of the present embodiment, since the sealing agent 50 for sealing the two substrates is made of a low melting point glass material, the sealing agent 50 is completely sealed (sealed) with the substrates. That is, it is not the idea of double sealing, but is characterized by a structure that avoids the influence of heat generated at that time while completely sealing with glass. Therefore, the infiltration of outside air such as moisture and oxygen through the joint with the substrate is significantly suppressed. Further, since the sealing agent 50 is also glass, the infiltration of water and the like is suppressed in the entire sealing agent 50. Moreover, although the temperature rises due to the laser beam irradiation when the sealant 50 is bonded to the first substrate 10 and the second substrate 20, a partition wall 60 is formed between the sealant 50 and the electronic element 30, and the electronic element 30 is formed. A part of the material does not flow and come into contact with the sealant 50, and the conduction of heat generated when the sealant 50 is heated can be blocked by the partition 60. Therefore, the deterioration of the electronic element 30 due to the heat generated at the time of joining the first and second substrates 10 and 20 and the sealant 50 is suppressed, and the infiltration of moisture and the like is almost completely suppressed. Even when the electronic element 30 which is sensitive to moisture and oxygen such as an EL light emitting element is included, its reliability is greatly improved.

(Second embodiment: display device)
Next, a composite display device having an OLED 30a and an LCD 30b as the electronic element 30 will be described with reference to FIG.

The display device 200 according to the second embodiment of the present invention has a driving TFT 13 formed for each pixel of the display screen and a first insulating layer (so-called flattening film) 19 having a flat surface on the driving TFT 13. A reflective electrode 41 for the LCD 30b formed above the first insulating layer 19 in the first region R of one pixel of the TFT substrate 10 and the TFT substrate (first substrate) 10, and the first insulation of the TFT substrate 10. The OLED 30a formed in the second region T of one pixel adjacent to the first region R on the layer 19 and having the first electrode 31, the organic layer 33, the second electrode 34 and the coating layer 35 faces the reflective electrode 41. A facing substrate (second substrate) 20 having a counter electrode (transparent electrode) 43 and arranged to face the TFT substrate 10, and a liquid crystal layer 42 filled between the TFT substrate 10 and the opposing substrate 20. , The sealing agent 50 to which the TFT substrate 10 and the opposing substrate 20 are bonded, and the sealing agent 50 contains a low melting point glass material and is adhered to each of the TFT substrate 10 and the opposing substrate 20. A partition wall 60 is arranged between the liquid crystal layer 42 and the TFT substrate 10 and the facing substrate 20, and the sealant 50 and the partition wall 60 are separated from each other.

In FIG. 2, the partition wall 60 and the sealant 50 are formed around one LCD 30b and one OLED 30a, but in reality, the sub-pixel consisting of the pair of the LCD 30b and the OLED 30a is red (R). , Green (G), and blue (B), respectively, and one pixel composed of sub-pixels composed of R, G, and B is formed in a matrix. In the present embodiment, the entire element formed in the matrix form becomes the electronic element 30, and the partition wall 60 and the sealant 50 are formed so as to surround them.

In the display device 200 of the present embodiment, the reflection type LCD 30b is formed in the first region R of one pixel, and a light emitting element such as an OLED 30a is formed in the second region T adjacent to the first region R of one pixel. There is. The reflective LCD 30b is a liquid crystal alignment film formed on the surfaces of the reflective electrode 41, the liquid crystal layer 42, the transparent electrode 43 (counter electrode), the color filter (CF) 44, the reflective electrode 41, and the transparent electrode 43, respectively. It is composed of 45 and 46 and a polarizing plate 47. The liquid crystal layer 42, the transparent electrode 43, and the polarizing plate 47 extend toward the second region T and are formed on the entire display device. Further, the OLED 30a includes a second insulating layer 32, which is a so-called insulating bank, which defines a light emitting region from the first electrode 31, an organic layer 33, a second electrode 34, and a coating layer 35 covering the periphery thereof. I'm out. The second insulating layer 32 is formed on the first insulating layer 19 of the first region R with the same material and substantially the same thickness, but is a second so-called insulating bank of the second region T. Since it is separated from the insulating layer 32, the second insulating layer in the first region R is referred to as the third insulating layer 32a.

The TFT substrate 10 includes a driving TFT (thin film transistor, hereinafter simply referred to as a TFT) 13 on one surface of an insulating substrate 11 made of, for example, a glass substrate or a resin film such as polyimide, a TFT such as a current supply TFT 12, a bus line (not shown), and the like. The first insulating layer 19 is formed, which is a so-called flattening film, which flattens the surface of the wiring. The TFT is formed of a semiconductor layer 14 such as polysilicon or an amorphous semiconductor, a gate insulating film 15, gate electrodes 13g and 12g, a passivation film 16, and the like, but detailed description thereof will be omitted. In FIG. 2, an auxiliary capacitance electrode 17 connected in parallel with the liquid crystal layer 42 of the LCD 30b is formed. This holds the voltage of the reflective electrode 41 when scanning in the active matrix display.

Further, in FIG. 2, the source 12s of the current supply TFT 12 is connected to the anode electrode 31 of the OLED 30a. The cathode electrode 34 of the OLED 30a is connected to the cathode bus line 18 by via contacts 18c1 and 18c2. Since the purpose of the first insulating layer 19 is to eliminate unevenness between the portion where the TFT and the like are formed and the portion where the TFT and the like are not formed to flatten the surface, the first insulating layer 19 is preferably formed of an organic material such as polyimide. However, the first insulating layer 19 may be made of an inorganic material. When the first insulating layer 19 is formed of an inorganic material such as SiO _y or SiN _x by a CVD method or the like, a thickness of several μm is required for flattening, so that the film formation time becomes long. However, it can be easily flattened by SOG (spin-on glass) or the like. In FIG. 2, the structure of the element is conceptually shown, and not all of the elements are accurately described.

The circuit for driving the LCD 30b and the OLED 30a is thus formed on the TFT substrate 10. Although detailed description of this drive circuit is omitted, the drain 13d of the drive TFT 13 and the like are connected to the reflection electrode 41 via the contacts 13d1 to 13d3, and the source 12s of the current supply TFT 12 is the first electrode for the OLED 30a. It is connected to 31.

In the counter substrate 20, for example, a color filter 44, a counter electrode 43, and a liquid crystal alignment film 46 are formed on a substrate such as glass or a transparent (translucent) film. In the LCD 30b, there are various methods for making the display screen color, but a color filter 44 is provided for each pixel to form pixels of the three primary colors of red (R), green (G), and blue (B). Be done. Color display can also be performed on the OLED30a side using the color filter 44, but when the material of the organic layer 33 is selected to directly emit red (R), green (G), and blue (B) light, , The color filter 44 becomes unnecessary. A liquid crystal alignment film 46 that determines the orientation of the liquid crystal is formed on the surface of the facing substrate 20 that faces the liquid crystal layer 42, and rubbing processing or the like is performed.

The facing substrate 20 and the TFT substrate 10 on which the OLED 30a or the like is formed are adhered to each other by the sealing agent 50 with a certain gap so that the reflecting electrode 41 and the facing electrode 43 face each other. Adhesion of the sealant 50 to the TFT substrate 10 and the opposing substrate 20 is performed in the same manner as the method of the first embodiment described above. The liquid crystal layer 42 is formed by enclosing the liquid crystal material that becomes a part of the electronic element 30 in the gap between the two substrates 10 and 20. A polarizing plate 47 is provided on the surface of the facing substrate 20 opposite to the liquid crystal layer 42. The facing electrode (transparent electrode) 43, the color filter (CF) 44, the liquid crystal alignment film 46, and the like are not formed at the portion of the facing substrate 20 to be adhered to the sealant 50, and the insulating substrate 21 is exposed. Similarly, the TFT substrate 10 also exposes the insulating substrate 11, and the insulating substrates 11 and 21 and the sealant 50 are adhered to each other. However, it is not necessary to directly bond the insulating substrates 11 and 21 in this way. It may be adhered to the surfaces of both substrates 11 and 21 via an insulating film such as SiO ₂ .

The anode 30a is formed in the second region T of one pixel, and as shown in FIG. 2, the first electrode 31 formed on the surface of the second region T of the first insulating layer 19 and the first electrode around the first electrode 31. The second insulating layer 32 formed so as to surround the 31, the organic layer 33 formed on the first electrode (anode electrode) 31 surrounded by the second insulating layer 32, and almost the entire surface of the OLED 30a on the organic layer 33. It is formed by a second electrode (cathode electrode) 34 formed in the above and a coating layer 35 covering the periphery thereof. The second insulating layer 32 may or may not cover the peripheral edge of the first electrode 31.

The first electrode 31 is formed as, for example, an anode electrode. In the case of the present embodiment, since the display screen is viewed from the upper side of FIG. 2, the first electrode 31 is formed as a reflective electrode and has a structure in which all the emitted light is emitted upward. Therefore, a light-reflecting material is selected depending on the work function relationship with the organic layer 33 or the like in contact with the first electrode 31. For example, it is formed by an ITO / APC / ITO laminated film.

The second insulating layer 32 is also called an insulating bank, and is formed to define a light emitting region of the OLED 30a and to prevent the anode electrode 31 and the cathode electrode 34 from coming into contact with each other and conducting conduction. The organic layer 33 is laminated on the first electrode 31 surrounded by the second insulating layer 32. The second insulating layer 32 is formed of a resin such as polyimide or acrylic resin. The second insulating layer 32 is also formed in the first region R where the LCD 30b is formed, in order to match the heights of the first region R and the second region T. That is, a liquid resin is applied to the entire surface, and then patterned to form a second insulating layer 32 around the first electrode 31 of the OLED 30a and a third insulating layer 32a of the first region R. At this time, the second insulating layer 32 on the OLED 30a side and the third insulating layer 32a on the LCD 30b side are separated to expose the first insulating layer 19. It is convenient that the organic layer 33 and the second electrode (cathode electrode) 34 of the OLED 30a are completely covered by the coating layer 35. In this case, as shown in FIG. 2, it is preferable that the first insulating layer 19 is also etched to directly expose the passivation film 16 or a metal film such as a pad or wiring. The coating layer 35 is formed of an inorganic film, but if the inorganic films are bonded to each other, the adhesion is good and it is easy to suppress the infiltration of moisture and the like.

The organic layer 33 is laminated on the first electrode 31 which is surrounded by the second insulating layer 32 and is exposed from the second insulating layer 32. Although the organic layer 33 is shown as a single layer in FIG. 2, various materials are laminated to form a plurality of layers. Further, since the organic layer 33 is vulnerable to moisture and cannot be patterned after being formed on the entire surface, an evaporated or sublimated organic material is selectively deposited only on a necessary portion by using a vapor deposition mask. Or, it is formed by a coating method such as inkjet.

Specifically, for example, as a layer in contact with the first electrode (anode electrode) 31, a hole injection layer made of a material having good ionization energy consistency that improves hole injection may be provided. On the hole injection layer, for example, an amine-based material is formed to improve the stable transport of holes and to confine electrons (energy barrier) to the light emitting layer. Further, a light emitting layer selected according to the emission wavelength is formed on the light emitting layer, for example, by doping Alq ₃ with a red or green organic fluorescent material for red and green. Further, as the blue-based material, a DSA-based organic material is used. On the other hand, when colored by the color filter 44, all the light emitting layers can be formed of the same material without doping. On the light emitting layer, an electron transporting layer that further improves the electron injectability and stably transports electrons is formed by Alq ₃ or the like. A laminated film of the organic layer 33 is formed by laminating each of these layers by about several tens of nm. An electron injection layer for improving the electron injection property such as LiF and Liq may be provided between the organic layer 33 and the second electrode 34. In the present embodiment, the organic layer 33 may include each of these organic layers and an inorganic layer.

As described above, among the laminated films of the organic layer 33, the organic layer of the material corresponding to each color of RGB may be deposited on the light emitting layer. In the example shown in FIG. 2, the light emitting layer is formed of the same organic material, and the light emitting color is specified by the color filter 44. Further, the hole transport layer, the electron transport layer, and the like are preferably deposited separately with a material suitable for the light emitting layer, if the light emitting performance is emphasized. However, in consideration of the material cost, the same material may be laminated in common for two or three colors of RGB.

After the laminated film of all the organic layers 33 including the electron injection layer such as the LiF layer is formed, the second electrode 34 is formed on the surface thereof. Specifically, a second electrode (for example, a cathode electrode) 34 is formed on substantially the entire surface of the OLED 30a. The second electrode 34 is formed of a translucent material, for example, a thin Mg-Ag eutectic film.

On the surface of the second electrode 34, a coating layer (TFE) 35 made of an inorganic insulating film such as Si ₃ N ₄ or SiO ₂ is formed by one layer or two or more laminated films. The coating layer (TFE) 35 includes a second electrode 34 and an organic layer 33. For example, the thickness of one layer is about 0.5 μm to 1.5 μm, and it is preferably formed by a laminated film of about two layers. The coating layer 35 is preferably formed in multiple layers with different materials. Since the coating layer 35 is formed of a plurality of layers, even if pinholes or the like are formed, the pinholes rarely completely match in the plurality of layers and are completely shielded from the outside air. The coating layer 35 is formed so as to completely cover the organic layer 33 and the second electrode 34. Therefore, as shown in FIG. 2, it is formed so as to be joined to a passivation film 16 made of an inorganic film further below the first insulating layer 19 below the second insulating layer 32, wiring, a pad, or the like.

As described above, if the first insulating layer 19 is made of an inorganic material, the coating layer 35 is also an inorganic insulating film. Therefore, even if the first insulating layer 19 is bonded on the surface of the first insulating layer 19, the bonding is sufficiently obtained. Be done. However, when the first insulating layer 19 is an organic layer such as polyimide, the adhesion to the coating layer 35 is lowered. Therefore, as described above, it is preferable that a groove (trench) is formed in the first insulating layer 19 and a part of the covering layer 35 is embedded therein.

As described above, the OLED 30a is formed. As shown in FIG. 2, a liquid crystal layer 42 and a counter electrode 43 are also formed on the OLED 30a. However, there is no reflective electrode (pixel electrode) 41 corresponding to the counter electrode 43 in the region of the OLED 30a. Therefore, the situation is the same as when the voltage applied to both surfaces of the liquid crystal layer 42, which will be described later, is off. That is, although it becomes normally black with respect to external light, the light emitted by the OLED 30a is the same as that without the liquid crystal layer 42 because the liquid crystal layer 42 is vertically oriented, and there is no change in the circular polarizing plate. Pass through 47. Then, since the light that has passed through the circularly polarizing plate 47 is visually recognized as it is, the image displayed by light emission by the OLED 30a is visually recognized as it is from the front side.

The light emitted by the OLED 30a is attenuated by the circularly polarizing plate 47 by about half by passing through the circularly polarizing plate 47. However, it is preferable that the circular polarizing plate 47 is also formed in the second region T. The reason is that when external light enters from the front, the first electrode 31 of the OLED 30a is made of a light-reflecting material, so that the light incident from the front is reflected by the first electrode 31 or the like in the OLED 30a. When you go outside, the display screen becomes very difficult to see. However, if there is a circular polarizing plate 47, the rotational direction of the circularly polarized light is reversed when it is reflected by the first electrode 31 or the like, as in the case of reflection by the reflecting electrode 41 of the LCD 30b described later, so that the reflected light is the circular polarizing plate 47. You will not be able to pass through. As a result, the reflected light can be cut. When there is a lot of outside light, the OLED 30a is not operated, but the reflected light is generated regardless of whether the OLED 30a is operating or not even during the operation of the LCD 30b. Therefore, the circular polarizing plate 47 is not in the second region T even during the operation of the LCD 30b. And the visibility characteristics of the LCD 30b are significantly reduced.

The LCD 30b of the electronic element 30 is composed of a reflective electrode 41 formed on the entire surface of the first region R, which is about half of one pixel, a liquid crystal layer 42, a counter electrode 43, and a polarizing plate (circular polarizing plate) 47. , Formed as a reflective LCD. It is difficult to form the liquid crystal layer 42 only in the first region R, and as described above, the liquid crystal layer 42 is formed on the entire surface including the second region T together with the counter electrode 43. In the example shown in FIG. 2, the color filter 44 is formed between the insulating substrate 21 of the counter substrate 20 and the counter electrode 43. As described above, the liquid crystal alignment film 46 is formed on the surface of the facing substrate 20 in contact with the liquid crystal layer 42, and the orientation of the liquid crystal molecules is regulated.

The reflective electrode 41 is a so-called pixel electrode and is formed on almost the entire surface of the first region R. The reflective electrode 41 is formed on the third insulating layer 32a on the first region R side, which is simultaneously formed of the same material as the second insulating layer 32 which is the insulating bank that defines the light emitting region of the OLED 30a described above. .. The reflective electrode 41 contacts 13d1 with the drain 13d of the driving TFT 13 formed on the TFT substrate 10 via the via contact 13d3 formed on the third insulating layer 32a and the via contact 13d2 formed on the first insulating layer 19. It is connected via. The reflective electrode 41 is formed of, for example, a laminated film of Al (aluminum) having a size of 0.05 μm or more and 0.2 μm or less and IZO (indium zinc oxide) having a size of 0.005 μm or more and 0.05 μm or less.

When the second insulating layer 32 that partitions the light emitting region of the OLED 30a is formed, the third insulating layer 32a is also formed in the first region R with an insulating layer made of the same material as the second insulating layer 32. However, as shown in FIG. 2, the second insulating layer 32 is divided at the boundary portion between the first region R and the second region T, and the first insulating layer 19 is exposed at the boundary portion. By forming the third insulating layer 32a also in the first region R in this way, the height of the lower layer of the liquid crystal layer 42 is brought close to each other between the two regions R and T (strictly speaking, the coating layer 35 There is a difference of about 1 μm in thickness).

The liquid crystal layer 42 contains a liquid crystal composition, and various display modes such as ECB (Electrically Controlled Birefringence) mode can be used. When displaying without providing a polarizing plate, a guest-host type can be used. In cooperation with the polarizing plate 47, the liquid crystal layer 42 blocks / passes incident light for each pixel according to the on / off of the voltage between the reflecting electrode 41 and the counter electrode 43. In the ECB mode, it is preferable that the light is formed to have a thickness that causes a phase difference of 1/4 wavelength when the voltage is turned on by the time the light passes through the liquid crystal layer 42 and reaches the reflecting electrode 41. A liquid crystal alignment film 45 is also formed on the surface of the TFT substrate 10 in contact with the liquid crystal layer 42. The liquid crystal alignment film 45 also regulates the orientation of liquid crystal molecules. The orientations of the liquid crystal alignment film 45 formed on the TFT substrate 10 and the liquid crystal alignment film 46 formed on the facing substrate 20 are formed so as to be different, for example, at an angle of 90 °.

The orientation of the liquid crystal layer 42 is regulated by the liquid crystal alignment films 45 and 46. For example, the liquid crystal alignment films 45 and 46 are arranged vertically so that the liquid crystal molecules are arranged vertically in a state where no voltage is applied to both surfaces of the liquid crystal layer 42. When is formed, as will be described later, the reflected light of the outside light does not go out in a state where a voltage equal to or higher than the threshold value is not applied between the reflecting electrode 41 and the counter electrode 43, and the display is black, that is, normal. Become black. In this case, since the OLED 30a is formed on the liquid crystal alignment film 45 on the TFT substrate 10 side, it is difficult to perform rubbing processing or ultraviolet irradiation. Therefore, the pre-tilt (tilt) angle is not formed and the orientation is substantially vertical, but it is preferable that the liquid crystal alignment film 46 on the opposite substrate 20 side has a pre-tilt angle of 80 ° to 89.9 °. .. By forming such a pre-tilt angle, when a voltage is applied between both electrodes, the liquid crystal molecules mainly near the center in the cell thickness direction tend to shift to horizontal orientation.

As the polarizing plate 47, a circular polarizing plate is used in the example shown in FIG. The circular polarizing plate is formed by a combination of a linear polarizing plate and a retardation plate having a quarter wavelength. Further, a 1/2 wave plate may be used in combination so as to exhibit a 1/4 wavelength condition for a wide range of wavelengths. The retardation plate is made of a uniaxially stretched optical film. The light that has passed through the circular polarizing plate has a linearly polarized phase shifted by 1/4 wavelength, for example, right-polarized light. As described above, if a voltage higher than the threshold value is not applied to the reflective electrodes 41 and the counter electrodes 43 provided on both sides of the liquid crystal layer 42 and the liquid crystal layer 42 is vertically oriented, the external light directly transmits the liquid crystal layer 42. The polarized light is reversed from the right circular polarization to the left circular polarization by passing through and being reflected by the reflecting electrode 41. For this reason, the external light that has returned to the circularly polarizing plate 47 due to the reverse direction of incidence and rotation becomes linearly polarized light at an angle 90 ° orthogonal to the transmission axis of the linearly polarizing plate, and cannot pass through the polarizing plate 47. It is displayed in black. On the other hand, when a voltage equal to or higher than the threshold value is applied to the electrodes on both sides of the liquid crystal layer 42, the liquid crystal molecules are horizontally aligned, and the external light is further out of phase by 1/4 wavelength in the liquid crystal layer 42. When it reaches, the phase difference becomes 1/2 wavelength, and it is reflected as linear polarization. After being reflected, the external light passes through the polarizing plate and becomes white because it passes through the path opposite to that at the time of incident. The polarizing plate 47 is not limited to the circular polarizing plate, and may be a linear polarizing plate depending on the display mode.

In the example shown in FIG. 2, the counter electrode 43 is an electrode common to all pixels for applying or not applying a voltage to each pixel of the liquid crystal layer 42, as described above. Therefore, it is formed on the entire surface of the display screen, and is also formed in the second region T in which the above-mentioned OLED 30a is formed. However, since the counter electrode 43 is formed of, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) and transmits light, there is no problem as described above.

The sealant 50 is the same as the sealant 50 of the first embodiment described above, and is formed by using a glass frit paste of low melting point glass, a glass ribbon, or the like to form an OLED 30a and an LCD 30b (element forming region A) of the TFT substrate 10 or the opposing substrate 20. Around, as shown in FIG. 3A, the two substrates are adhered and then adhered after being stacked. Adhesion is performed by softening the entire glass frit or the low melting point glass at the joint with at least the substrates 10 and 20 of the glass ribbon by laser light or the like.

The partition wall 60 is formed between the sealant 50 and the LCD 30b and the OLED 30a at a distance from the sealant 50, which is the same as the partition wall 60 of the above-described first embodiment, and is made of the same material as that of the first embodiment. It is formed and its description is omitted. In the example shown in FIG. 2, the partition wall 60 is in contact with the LCD 30b or the OLED 30a, but the partition wall 60 and the electronic element 30 may be in contact with each other or separated from each other. It is important that the sealant 50 and the partition wall 60 are separated from each other.

(Third Embodiment: Manufacturing method of display device)
Next, a method of manufacturing the display device according to the third embodiment of the present invention will be described with reference to FIGS. 2 and 4. The method for manufacturing the display device of the present embodiment includes a step (S1) of forming at least the TFT substrate 10 on which the driving element is formed, and a step of forming the reflective electrode 41 and the OLED 30a for the LCD 30b above or on the surface of the TFT substrate 10. (S2), the step of forming the counter substrate 20 having the counter electrode 43 for the LCD 30b (S3), and the formation of the element for forming the reflective electrode 41 for the LCD 30b and the OLED 30a in either the TFT substrate 10 or the counter substrate 20. In the step (S4) of arranging the partition wall material 61 (see FIG. 3A) on the peripheral edge of the region A, and in either the TFT substrate 10 or the facing substrate 20, the partition wall 60 is opposite to the element forming region A of the LCD 30b and the OLED 30a. A step (S5) of arranging the sealant material 51 (see FIG. 3A) at the portion separated from the partition wall 60, and a step (S6) of dropping the liquid crystal material onto the element forming region A of the LCD 30b and the OLED 30a surrounded by the partition wall 60. The step (S7) of superimposing the TFT substrate 10 and the opposing substrate 20 and the step of adhering the TFT substrate 10 and the opposing substrate 20 with the sealant material 51 (S8) are included. Then, a material containing low melting point glass is used as the sealant material 51, and the sealant material 51 is adhered to the TFT substrate 10 and the opposing substrate 20 by irradiation with laser light.

The element forming region A of the substrate on which the electronic element 30 is not formed means an region corresponding to the element forming region A of the substrate on which the electronic element 30 is formed when the two substrates are overlapped. Further, each of the above steps does not have to be in this order. For example, step S3 may be performed first, or the order of S4 and S5 may be reversed. Further, in FIG. 4, steps S4 and S5 are performed on the TFT substrate 11, but steps S4 and S5 may be performed on the opposed substrate 20.

First, the TFT substrate 10 is formed (S1). Specifically, a semiconductor layer 14 (a semiconductor layer on which a source 12s and a drain 13d are formed) and a bus line (not shown) are formed on the insulating substrate 11, and a gate insulating film 15 made of SiO ₂ or the like is formed on the semiconductor layer 14 (a semiconductor layer on which the source 12s and the drain 13d are formed). To. Then, impurities are doped in a predetermined region of the semiconductor layer 14, and a drain 13d of the driving TFT 13 (see FIG. 2), a source 12s of the current supply TFT 12 (see FIG. 2), and the like are formed. Then, the gate electrode 13g of the driving TFT 13, the gate electrode 12g of the current supply TFT 12, and the auxiliary capacitance electrode 14 are formed on the gate insulating film 15. A passivation film 16 made of SiN _x or the like is formed on the surface thereof. Then, a contact such as the drain contact 13d1 of the driving TFT 13 is formed, and the first insulating layer 19 for flattening the surface thereof is formed of, for example, polyimide. As described above, the first insulating layer 19 may be formed of an inorganic film such as SOG.

Next, the reflective electrode 41 for the LCD 30b and the OLED 30a are formed above or on the surface of the TFT substrate 10 (S2). Specifically, the first electrode (anode electrode) 31 for the OLED 30a is formed of an ITO / APC (Ag-Pd-Cu alloy) / ITO laminated film in relation to the organic layer 33. The contact 13d2 connected to the drain 13d of the driving TFT 13 is also formed on the surface of the first insulating layer 19. The contact 13d2 for the LCD 30b is formed by forming a contact hole and embedding a conductive layer or the like.

Then, the second insulating layer 32 is formed of polyimide, acrylic resin, or the like. The second insulating layer 32 divides each pixel of the OLED 30a, and is formed so as to surround the first electrode 31 and have a convex portion. A resin film is formed on the entire surface of the second insulating layer 32 in a liquid state, and then the second insulating layer 32 is formed at a desired position and in a desired shape by patterning. In the present embodiment, the entire surface of the TFT substrate 10 is coated with a thickness corresponding to the height of the convex portion formed around the first electrode 31, and is patterned with the first electrode 31 and the third insulating layer 32a. The boundaries are exposed. As a result, the second insulating layer 32 and the third insulating layer 32a are separated, and the first insulating layer 19 is formed so as to be exposed between them. As a result, the organic layer 33 of the OLED 30a and the second electrode 34 on the organic layer 33 can be completely covered by the coating layer 35 formed on the coating layer 35.

At the time of patterning the second insulating layer 32, a contact hole connecting with the contact 13d1 of the first region R is formed, and a third contact 13d3 is formed. As a result, the third contact 13d3 connected to the drain 13d of the driving TFT 13 is exposed to a part of the third insulating layer 32a. Further, a trench is also formed in the first insulating layer 19 which is divided into the second insulating layer 32 and the third insulating layer 32a and is exposed, and the passivation film 16 or the metal film of the wiring or the pad under the trench is exposed. This is because the coating layer 35 is embedded in the post-process to bond the inorganic films to each other. When the first insulating layer 19 is formed of an inorganic film, it is not necessary to form this trench.

After that, the organic layer 33 is formed. Since the organic layer 33 is weak against moisture and oxygen and cannot be patterned, it is vapor-deposited only in a necessary region using a thin-film deposition mask. Alternatively, it may be formed by printing such as an inkjet method. When formed by vapor deposition, a vapor deposition mask is placed on the convex portion of the second insulating layer 32, and an organic material sublimated or vaporized from a crucible or the like is placed on the first electrode 31 surrounded by the second insulating layer 32. It is laminated on. As described above, this organic material is laminated with various materials.

Next, the second electrode 34 serving as the cathode electrode is formed on substantially the entire surface of the OLED 30a including the convex portion of the organic layer 33 and the second insulating layer 32. For example, Mg-Ag alloy is used for the second electrode 34, and the second electrode 34 is formed by vapor deposition using a vapor deposition mask.

After that, the coating layer 35 is formed. The coating layer 35 is a layer for protecting the organic layer 33 from moisture and oxygen, and is formed of an inorganic film such as SiN _x or SiO _y . Moreover, since pinholes may be formed during film formation, it is preferable to form a multilayer film having at least two layers. The coating layer 35 is formed by a CVD method, an ALD (Atomic Layer Deposition) method, or the like. Preferably, the coating layer 35 is laminated in multiple layers with different materials. Although the coating layer 35 is formed on the OLED 30a, it may be formed so as to extend to the LCD 30b side which is the first region R. However, it is necessary not to straddle the contact 13d3. If it is also formed on the contacts 13d3, it becomes necessary to form through holes for the contacts in the coating layer 35. In that case, water penetrates into the second electrode 34 and the organic layer 33 along the inner surface of the through hole.

At the time of forming the coating layer 35, the material is also embedded in the trench formed in the first insulating layer 19, and the coating layer 35 is bonded to an inorganic film such as a passivation film 16 under the first insulating layer 19. Will be done. The coating layer 35 may be formed on the entire surface and then patterned by etching. This is because the coating layer 35 is bonded to the passivation film 16 and the like to prevent the infiltration of water. However, masks can also be used to deposit only where desired. The latter is preferable from the viewpoint of preventing the ingress of water.

After that, the reflective electrode (pixel electrode) 41 for the LCD 30b is formed on the surface of the third insulating layer 32a of the first region R. As a result, the reflective electrode 41 is also electrically connected to the contact 13d3. The reflective electrode 41 is formed of, for example, Al and IZO. The reflective electrode 41 is also formed in substantially half of one pixel excluding the entire surface of the OLED 30a. In this case as well, it may be formed by patterning a reflective film formed on the entire surface by vapor deposition or the like. This is because the organic layer 33 and the like are completely covered by the coating layer 35. However, it may be covered with a mask and formed only in a desired region. As a result, the electronic elements 30 in the first region R and the second region T on the TFT substrate 10 side are formed.

On the other hand, a counter substrate 20 having a counter electrode 43 for the LCD 30b is formed (S3). The facing substrate 20 is formed by laminating a translucent facing electrode 43 and, if necessary, a color filter 44 or a liquid crystal alignment film 46 on an insulating substrate 21 such as a glass plate or a resin film.

After that, the partition wall material 61 (see FIG. 3A) is arranged on the peripheral edge of the region (element forming region A) for forming the reflective electrode 41 for the LCD 30b and the OLED 30a on either the TFT substrate 10 or the opposing substrate 20 (see FIG. 3A). S4). The partition wall material 61 may be arranged on the facing substrate 20 instead of the TFT substrate 10. In this case, when the TFT substrate 10 and the facing substrate 20 are overlapped with each other, it is necessary to form the reflective electrode 41 of the LCD 30b and the OLED 30a so as to be accommodated in the region surrounded by the partition wall material 61. That is, it is formed on the peripheral edge of the region of the opposing substrate 20 facing the element forming region A of the TFT substrate 10. As described above, the partition wall material 61 is preferably an inorganic material, but a resin material such as an epoxy resin can also be used. These partition wall materials 61 can be arranged by applying in the form of a paste, or may be adhered as a ribbon or the like. The height of the partition material 61 is selected according to the distance between the two substrates to be bonded. Usually, the height of the partition wall material 61 is 5 μm or more and about 10 μm or less.

When arranging as a solid material such as a glass ribbon, the glass ribbon may be fixed by an adhesive or the like. Since the partition wall material 61 does not stick after the two substrates 10 and 20 are overlapped with each other, it is preferable that the partition wall material 61 is attached to the entire surface of the contact surface with the substrate. However, the gas contained in the organic material may be expelled by heating and solidifying both substrates 10 and 20 after bonding or after forming with the above-mentioned thermosetting resin before superimposing the two substrates 10 and 20 on top of each other. As shown in FIG. 2, the partition wall material 61 may be formed so as to be in contact with the LCD 30b or the OLED 30a, or may be formed apart from these electronic elements 30. It is preferable that the ITO film, CF film, insulating film and the like formed on the TFT substrate 10 and the opposing substrate 20 are removed, but it is not necessary to remove them.

Further, when the partition wall 60 is bonded to both the TFT substrate 10 and the facing substrate 20, if the partition wall material 61 is made of powder of an inorganic material, an adhesive, particularly an adhesive that can be cured by ultraviolet rays or the like, is applied to the upper surface thereof. Is preferably applied. Further, if the above-mentioned ultraviolet curable resin, visible light curable resin, delayed curable resin and the like are used, almost no gas is generated even at the time of adhesion, and both substrates 10 and 20 can be reliably fixed. In this case, the partition wall material 61 may be first adhered to both substrates by ultraviolet rays or the like, and then the sealant material 51 may be adhered to both substrates 10 and 20. Further, the partition wall material 61 and the sealant material 51 may be adhered to both substrates 10 and 20 at the same time.

Then, in either the TFT substrate 10 or the opposed substrate 20, the sealant material 51 (see FIG. 3A) is separated from the partition wall 60 at a portion of the partition wall 60 opposite to the forming region (element forming region A) of the LCD 30b and the OLED 30a. It is arranged (S5). The sealant material 51 may be arranged on either the TFT substrate 10 or the opposing substrate 20. The substrate is not limited to the substrate on which the partition material 61 is formed. If the partition wall material 61 and the sealant material 51 are formed so as to have the same height and at regular intervals when they are overlapped, the partition wall material 61 and the sealant material 51 are formed on separate substrates. It may be formed. As described above, the sealant material 51 may also be in the form of a paste, or one end or both ends of the glass ribbon may be fixed and arranged with an adhesive. Even when this end portion is attached and fixed with an adhesive, it is preferable that the end portion is arranged so as to be adhered to the outside of the portion to which the sealant 50 is adhered, as shown in FIGS. 3B to 3C described above.

Since the sealant 50 softens and adheres the TFT substrate 10 and the opposing substrate 20 to the low melting point glass which is the sealant material 51, the insulating substrates 11 and 21 are exposed directly as shown in FIG. It is preferable to join. This is because it is difficult to obtain sufficient adhesion when another film such as ITO is present. The height of the sealant material 51 is also formed to be about the same as the height of the partition wall material 61.

After that, the liquid crystal material (liquid crystal composition) is dropped onto the forming regions of the LCD 30b and the OLED 30a surrounded by the partition wall 60 (S6). The dropping of the liquid crystal composition is preferably carried out in a vacuum atmosphere. This is because it is easy to release the bubbles caught in the liquid crystal material at the time of dropping. When the liquid crystal material is dropped, it rises due to surface tension and does not fall even if the substrate is turned back.

Then, the TFT substrate 10 on which the OLED 30a or the like is formed and the opposing substrate 20 are aligned and overlapped so that their electrodes face each other (S7). After stacking, it is preferable to set the pressure to atmospheric pressure or higher because the pressure can be uniformly applied to the two substrates. In this case, it is preferably in nitrogen (100% N ₂ atmosphere) or in dry air. In particular, the dry air is particularly preferably dry air having a dew point of −50 ° C. or lower. At this point, the sealant 50 has not yet been sealed, so that dry nitrogen can enter the inside from the sealant 50.

After that, the TFT substrate 10 and the opposing substrate 20 are adhered to each other by softening the sealant material 51 with, for example, a CO ₂ laser (S8). By sealing with the sealant 50 in a dry atmosphere, at least the space between the sealant 50 and the partition wall 60 can be filled with dry nitrogen. After this adhesion, the polarizing plate 47 is attached to the surface of the insulating substrate 21 opposite to the counter electrode 43. When the polarizing plate 47 is a circular polarizing plate, a retardation plate having a 1/4 wavelength is arranged on the insulating substrate 21 side, and a linear polarizing plate is superposed on the retarding plate. As a result, it is possible to further prevent the invasion of moisture and the like from the outside. Then, a hybrid type display device 200 in which the reflective LCD 30b is formed in the first region R where the reflective electrode 41 is formed and the OLED 30a is formed in the second region T is obtained.

(Summary)
(1) The sealing structure according to the first embodiment of the present invention includes a first substrate and a second substrate arranged to face each other, and an electronic element formed between the first substrate and the second substrate. A sealant that seals the first substrate and the second substrate on the outer periphery of the electronic element, and the sealant contains a low melting point glass material and is adhered to each of the first substrate and the second substrate. A partition wall formed so as to surround the outer periphery of the electronic element is arranged between the sealing agent and the electronic element, and between the first substrate and the second substrate, and the seal is provided. The agent and the partition wall are separated from each other.

According to the present embodiment, a partition wall is formed between the sealant and the electronic element while adhering the sealant with low melting point glass, and the sealant and the partition wall are separated from each other. The heat generated during bonding with the sealant is less likely to be transferred to the electronic element side. As a result, an adverse effect on the electronic device is suppressed while a reliable seal is obtained.

(2) When the separated distance is 0.5 mm or more, the heat conduction is extremely reduced through the gap portion, so that the effect of suppressing the heat conduction is large.

(3) It is preferable that the sealing agent is glass that has been hardened after the glass frit has softened, because it can be easily manufactured and can be completely sealed.

(4) The sealing agent may be formed by adhering a glass ribbon to the first substrate and the second substrate. If it is a glass ribbon, it is not necessary to use a binder or the like, so that unnecessary gas can be removed more reliably without enclosing the gas.

(5) Since the partition wall is adhered to the first substrate and the second substrate, the distance between the two substrates is stable, which is preferable for maintaining the performance of the electronic device.

(6) The partition wall is preferable because 90% or more of the volume of the partition wall is an inorganic material, so that the generation of gas from the partition wall itself can be suppressed.

(7) Since the partition wall is a solidified body of at least one kind of fine powder of glass, ceramics, semiconductor, metal and metal oxide, it is a material that can be easily obtained and is easily implemented.

(8) Since the partition wall contains a glass ribbon, a partition wall containing almost no organic material can be obtained.

(9) If the partition wall is a kind of bonding resin selected from a group of ultraviolet curable resin, visible light curable resin, and delayed curable resin, the same method as in manufacturing a conventional liquid crystal display device can be used. Although it can be manufactured, it is preferable because it can suppress the generation of gas due to the partition material.

(10) The display device according to the second embodiment of the present invention includes a TFT substrate having a drive element formed for each pixel of the display screen and a first insulating layer having a flat surface on the drive element, and the above-mentioned TFT substrate. In the first region of one pixel of the TFT substrate, the reflective electrode for the liquid crystal display element formed above the first insulating layer and the first region above the first insulating layer of the TFT substrate are adjacent to each other. It has an organic EL display element formed in the second region of the one pixel and having a first electrode, an organic layer, a second electrode and a coating layer, and a counter electrode facing the reflecting electrode, facing the TFT substrate. The facing substrate is provided with a liquid crystal layer filled between the TFT substrate and the opposing substrate, and a sealing agent in which the TFT substrate and the opposing substrate are bonded together, and the sealing agent is low. It contains a melting point glass material and is adhered to each of the TFT substrate and the opposing substrate, and a partition wall is arranged between the sealing agent and the liquid crystal layer and between the TFT substrate and the opposing substrate. The sealant and the partition wall are separated from each other.

According to the present embodiment, in a hybrid display device including an LCD and an OLED, an OLED that is sensitive to moisture and oxygen can be effectively protected. As a result, a more reliable display device can be obtained even under severe environmental conditions such as in-vehicle use.

(11) The method for manufacturing the display device according to the third embodiment of the present invention includes at least a step of forming a TFT substrate on which a driving element is formed, and a reflective electrode for a liquid crystal display element and a reflective electrode on the upper or surface of the TFT substrate. A step of forming an organic EL display element, a step of forming a counter substrate having a counter electrode for a liquid crystal display element, and a reflective electrode for the liquid crystal display element and the organic in either the TFT substrate or the counter substrate. The step of arranging the partition wall material on the peripheral edge of the element forming region forming the EL display element, and the partition wall material at a portion of the partition wall material opposite to the element forming region on either the TFT substrate or the facing substrate. A step of arranging the sealant material apart from the above, a step of dropping the liquid crystal composition into the element forming region surrounded by the partition wall material, a step of superimposing the TFT substrate and the facing substrate, and the sealant. A step of adhering the TFT substrate and the facing substrate depending on the material is provided, a material containing low melting point glass is used as the sealing agent material, and the sealing agent material is irradiated with laser light to the TFT substrate and the said. It adheres to the opposing substrate.

According to the present embodiment, the partition wall material and the sealant material are arranged on one substrate, and the sealant material is sealed by being softened after being overlapped, so that the material can be easily manufactured. be able to. Moreover, since the organic material of the partition wall can be released before sealing, even if an organic material such as resin is used for the partition wall, the risk of enclosing gas between the substrates can be eliminated.

(12) According to the method of adhering the TFT substrate and the facing substrate by using a glass frit as the sealing agent, applying the glass frit by printing or a dispenser, softening it with a laser beam, and then curing it. , The glass material can be easily arranged.

(13) A glass ribbon is used as the sealing agent, and after the glass ribbon is attached to a predetermined portion of either the TFT substrate or the opposing substrate, the TFT substrate and the opposing substrate are overlapped with each other by laser light. By adhering, there is less risk of enclosing gas based on a binder or the like.

(14) In the pasting of the glass ribbon, the entire circumference of the sealing agent to be adhered is made into a plurality of divided regions, and one end or both ends of the plurality of glass ribbons covering each of the divided regions are described. By adhering to the TFT substrate or the opposing substrate at a portion of the adhesive portion of the sealant opposite to the partition wall, the adhesive portion is not heated so much, and even if it is heated, gas is generated from the adhesive. However, it does not enter the region of the electronic element between the substrates, and the encapsulation of gas can be completely suppressed.

(15) A type of bonding resin selected from a group of an ultraviolet curable resin, a visible light curable resin, and a delayed curable resin is used as the partition material, and after the TFT substrate and the facing substrate are overlapped with each other, The partition material can be joined to each of the TFT substrate and the facing substrate.

(16) The partition wall is formed by applying a paste of at least one fine powder of glass, ceramics, semiconductor, metal and metal oxide and then curing the partition wall, and then the TFT substrate and the facing substrate are laminated and attached. By combining them, the gas generated from the binder or the like is released in advance, so there is no risk of encapsulation between the substrates.

(17) By forming the partition wall by arranging a ribbon made of an inorganic material at a predetermined portion, it is possible to substantially suppress the generation of gas from the partition wall.

(18) The partition material and the sealant material are continuously arranged on either the TFT substrate or the opposing substrate, and then the TFT substrate and the opposing substrate are overlapped with each other, and then the seal is provided. By adhering the agent, it is efficient because it can be continuously formed when the sealant or the partition wall material is applied as a paste.

(19) The step of dropping the liquid crystal composition and the step of superimposing the TFT substrate and the facing substrate are performed in a vacuum atmosphere, and then the TFT substrate and the facing substrate are subjected to the sealing agent in a nitrogen atmosphere. Can be bonded. As a result, since the liquid crystal material is injected under vacuum, it is easy to release air bubbles, and after that, the sealing is performed in a nitrogen atmosphere, so that nitrogen intervenes between the sealant and the partition wall instead of vacuum. , It is easy to prevent the ingress of moisture from the outside.

10 First substrate (TFT substrate)
13 Driving TFT
19 First insulating layer 20 Second substrate (opposite substrate)
30 Electronic element 30a Organic EL light emitting element (OLED)
30b Liquid crystal display element (LCD)
31 First electrode (anode electrode)
32 Second insulating layer 32a Third insulating layer 33 Organic layer 34 Second electrode (cathode electrode)
35 Covering layer (TFE)
41 Reflective electrode (pixel electrode)
42 Liquid crystal layer 43 Opposite electrode 47 Polarizing plate 50 Sealing agent 51 Sealing agent material 60 Partition wall 61 Partition material 100 Sealing structure 200 Display device A Element forming area B Adhesive part R First area T Second area

Claims (6)

The first substrate and the second substrate arranged to face each other,
An electronic element formed between the first substrate and the second substrate,
A partition wall formed between the first substrate and the second substrate, which surrounds the electronic element on the outer periphery of the formation region of the electronic element,
A sealant that surrounds the partition wall at a portion of the partition wall opposite to the region where the electronic element is formed and seals the first substrate and the second substrate.
With
The sealing agent comprises a glass ribbon containing a low melting point glass material arranged over the entire circumference of the sealing portion surrounding the partition wall, and the glass ribbon is adhered to each of the first substrate and the second substrate. ,
One end or both ends of each of the divided pieces of the glass ribbon corresponding to the region where the entire circumference of the sealing portion is divided into a plurality of parts adheres to the first substrate or the second substrate via an adhesive. Moreover, the adjacent divided pieces are adhered to each other.
The partition wall is formed by adhering at least one end of a solid material to the first substrate or the second substrate with an adhesive.
Substrate sealing structure. The sealing structure according to claim 1 , wherein one end or both ends of the divided piece are attached at a position protruding outward from the sealing portion opposite to the element forming region. The sealing according to claim 1 or 2 , wherein only one end of the partition wall is adhered to the first substrate or the second substrate, and the other end portion is not adhered to the first substrate and the second substrate. Structure. The process of forming an electronic element on the first substrate,
A step of preparing a second substrate to be bonded to the first substrate, and
The partition wall material is arranged around the electronic element forming region of the first substrate or at the portion of the second substrate that should surround the electronic element forming region when the second substrate is adhered to the first substrate. And the process to do
A step of forming a partition wall made of a solid material by fixing the partition wall material to the first substrate or the second substrate, and
After forming the partition wall, a sealant material containing low melting point glass is placed on the outer peripheral portion of the partition wall of the first substrate or the second substrate opposite to the electronic element, and then the first substrate and the second substrate are formed. The process of stacking the substrates and
A step of adhering the first substrate and the second substrate by curing the sealant material, and
Including
A method for manufacturing an electronic device, wherein the sealing agent material is made of a glass ribbon, and only the glass ribbon is arranged over the entire circumference of a sealing portion surrounding the partition wall without the presence of a glass frit even partially . The arrangement of the glass ribbon is such that the entire circumference of the sealing portion is made into a plurality of divided regions, and a plurality of divided pieces of the glass ribbon covering each of the divided regions are formed, and one end or both ends of the divided pieces are arranged. The manufacturing method according to claim 4 , wherein is adhered to the first substrate or the second substrate, and the adjacent divided pieces are adhered to each other. The fifth aspect of claim 5 , wherein one end or both ends of the divided piece of the glass ribbon are attached to a position of the first substrate or the second substrate that protrudes outward from the seal portion opposite to the element forming region. Manufacturing method.

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