JP6197897B2 - Gallium nitride crystal, group 13 nitride crystal, crystal substrate, and manufacturing method thereof - Google Patents

Description

  The present invention relates to a gallium nitride crystal, a group 13 nitride crystal, a crystal substrate, and a manufacturing method thereof.

  Gallium nitride (GaN) -based semiconductor materials are used for semiconductor devices such as blue light-emitting diodes (LEDs), white LEDs, and semiconductor lasers (LDs: Laser Diodes). White LEDs are used as backlights for mobile phone screens, liquid crystal displays, and the like, and blue LEDs are used for traffic lights and other electrical decorations. The blue-violet LD is used as a light source for a Blu-ray disc.

  At present, most of gallium nitride (GaN) -based semiconductor devices used as ultraviolet and purple-blue-green light sources are mostly formed on a sapphire or SiC substrate by MO-CVD (organometallic chemical vapor phase). (Growth method) and MBE method (molecular beam crystal growth method). As a problem when sapphire or SiC is used as a substrate, there is an increase in crystal defects caused by a large difference in thermal expansion coefficient and lattice constant from the group 13 nitride. Defects adversely affect device characteristics, leading to problems such as difficulty in extending the lifetime of light-emitting devices and increasing operating power. In order to solve these problems, a gallium nitride substrate that is the same as the material for crystal growth on the substrate is most appropriate.

At present, the gallium nitride free-standing substrate is thickened by the HVPE method on a heterogeneous substrate such as a sapphire substrate or a GaAs substrate by using a growth method that reduces dislocation density such as ELO, advanced-DEEP method, and VAS method. After the growth, it is manufactured by a method of separating a gallium nitride thick film from a heterogeneous substrate. The gallium nitride substrate manufactured in this way has a transition density reduced to about 10 ⁶ cm ⁻² , and has a practical size of 2 inches, and is mainly used for laser devices. Recently, a further large-diameter substrate such as 4 inches or 6 inches is desired for reducing the cost of white LEDs and for electronic device applications.

  However, warpage due to the difference in thermal expansion coefficient between the different substrate material and gallium nitride and the occurrence of cracks are obstacles to increasing the diameter.

  On the other hand, as one of the methods for realizing a gallium nitride substrate by liquid phase growth, a flux method in which nitrogen is dissolved from a gas phase in a mixed melt of an alkali metal and a group 13 metal and crystal growth of gallium nitride is researched and developed. ing.

In the flux method, a mixed melt containing an alkali metal such as sodium (Na) or potassium (K) and a group 13 metal such as gallium (Ga) is heated to about 600 to 900 ° C. in an atmosphere with a nitrogen pressure of 10 MPa or less. In this method, nitrogen is dissolved from the gas phase by heating and reacted with a group 13 metal in the mixed melt to grow a group 13 nitride crystal. Compared with other liquid phase growth, the flux method is capable of crystal growth under a low temperature and low pressure, and the grown crystal has advantages such as a dislocation density lower than 10 ⁶ cm ⁻² .

Chemistry of Materials Vol. 9 (1997) 413-416, using sodium azide (NaN ₃ ) and metal Ga as raw materials, sealed in a stainless steel reaction vessel (inner vessel dimensions; inner diameter 7.5 mm, length 100 mm) in a nitrogen atmosphere, It has been reported that gallium nitride crystals are grown by holding the reaction vessel at a temperature of 600 to 800 ° C. for 24 to 100 hours.

  Patent Document 1 discloses a method for growing a gallium nitride columnar crystal using a needle crystal of aluminum nitride (AlN) as a seed crystal as a method for producing a large gallium nitride crystal. Patent Document 2 discloses a method for producing an aluminum nitride needle crystal that becomes a seed crystal.

  According to the experience of the present inventor, the practical length of the needle crystal used as the seed crystal in the flux method is required to be about 9 mm or more in consideration of retention of the seed crystal. Also, if the diameter of the seed crystal (the maximum dimension of the cross section perpendicular to the longitudinal direction) is too small, it is difficult to handle and may break at the raw material preparation stage or the seed crystal installation stage. Is needed.

  However, when a gallium nitride crystal is grown using aluminum nitride as a seed crystal, dislocation due to lattice mismatch occurs because the lattice constants of aluminum nitride and gallium nitride are different. In addition, since the thermal expansion coefficients of aluminum nitride and gallium nitride are different, new dislocations due to thermal stress and cracks may occur in the process of cooling from the crystal growth temperature to room temperature.

  Therefore, as a seed crystal for growing a high-quality gallium nitride crystal having a low dislocation density, it is desirable to use a gallium nitride crystal having the same lattice constant and thermal expansion coefficient. However, it is difficult to grow gallium nitride needle crystals by the method described in Patent Document 2. Therefore, a gallium nitride needle crystal having a length of about 9 mm or more and a diameter of 100 μm or more has not yet been realized.

Therefore, it has been impossible to produce a high-quality gallium nitride crystal (bulk crystal) having a dislocation density of 10 ⁶ cm ⁻² or less using such a gallium nitride needle crystal as a seed crystal.

  This invention is made | formed in view of the above, Comprising: It aims at manufacturing the large sized bulk crystal which can cut out a crystal substrate of practical size.

To solve the above problems and achieve the object, according gallium nitride crystal in the present invention, a shape hexagonal form of the c-axis perpendicular to cross section, the length L of the c axis is not less 9mm or more, c The crystal diameter d of the cross section perpendicular to the axis is 100 μm or more, and the ratio L / d between the length L of the c axis and the crystal diameter d of the cross section perpendicular to the c axis is 7 or more. The side surface is an m-plane.

  According to the present invention, the gallium nitride crystal has a c-axis length L of 9 mm or more, a crystal diameter d in a cross section perpendicular to the c-axis of 100 μm or more, a c-axis length L, and a c-axis. Since the ratio L / d of the crystal diameter d of the cross section perpendicular to the diameter is 7 or more, it becomes possible to produce a bulk crystal having a large volume by enlarging this long needle-like crystal, and a practical size. A large bulk crystal capable of cutting out the crystal substrate can be manufactured.

FIG. 1 is a schematic cross-sectional view of a crystal growth apparatus for producing a seed crystal in an embodiment of the present invention. FIG. 2 is a schematic diagram for explaining the c-axis and c-plane of a group 13 nitride needle crystal. FIG. 3 is a schematic diagram for explaining the c-plane. FIG. 4 is a schematic cross-sectional view illustrating a crystal growth apparatus when crystal growth is performed using a seed crystal. FIG. 5 is a schematic diagram showing an example of the group 13 nitride crystal of the present embodiment. FIG. 6 is a schematic diagram showing an example of the group 13 nitride crystal of the present embodiment. FIG. 7-1 is a schematic diagram illustrating an example of a group 13 nitride crystal of the present embodiment. FIG. 7-2 is a schematic diagram illustrating a direction of slicing the group 13 nitride single crystal. FIG. 8A is a schematic diagram illustrating an example of a crystal substrate. FIG. 8-2 is a schematic diagram illustrating an example of a crystal substrate. FIG. 8C is a schematic diagram illustrating an example of a crystal substrate. FIG. 9A is a schematic diagram illustrating the group 13 nitride crystal of the present embodiment. FIG. 9-2 is a schematic diagram illustrating a direction of slicing the group 13 nitride single crystal. FIG. 10A is a schematic diagram illustrating an example of a crystal substrate. FIG. 10-2 is a schematic diagram illustrating an example of a crystal substrate. FIG. 10C is a schematic diagram illustrating an example of a crystal substrate. FIG. 11A is a diagram illustrating an example of a crystal grown by stacking. FIG. 11B is a diagram for explaining a crystal substrate slicing method. FIG. 11C is a diagram for explaining a crystal substrate slicing method. FIG. 12A is a diagram of an example of a crystal grown by stacking. FIG. 12-2 is a diagram for explaining a crystal substrate slicing method. FIG. 12C is a diagram for explaining a crystal substrate slicing method. FIG. 13A is a diagram illustrating an example of a crystal grown by stacking. FIG. 13-2 is a diagram for explaining a method for slicing a crystal substrate. FIG. 13C is a diagram for explaining a crystal substrate slicing method. FIG. 14A is a diagram illustrating an example of a crystal substrate manufactured using stacked growth. FIG. 14-2 is a diagram illustrating an example of a crystal substrate manufactured using stacked growth. FIG. 14C is a diagram illustrating an example of a crystal substrate manufactured using stacked growth. 14-4 is a figure which shows an example of the crystal substrate manufactured using laminated growth. FIG. 14-5 is a diagram illustrating an example of a crystal substrate manufactured using stacked growth. FIG. 15 is a schematic diagram (cross-sectional view) illustrating a configuration example of the crystal growth apparatus according to the thirteenth embodiment. FIG. 16 is a schematic diagram (cross-sectional view) illustrating a configuration example of the crystal growth apparatus according to the fifteenth embodiment. FIG. 17 is a schematic diagram illustrating a configuration example of the crystal growth apparatus according to the sixteenth embodiment. 18 is a photograph of the GaN needle crystal manufactured in Example 1. FIG. FIG. 19 is a fluorescence micrograph of the GaN needle crystal produced in Example 2. FIG. 20 is a photoluminescence spectrum of the GaN needle crystal produced in Example 2. FIG. 21 is a microscopic image (a) of the side surface (m-plane) of the GaN crystal produced in Example 11, and a fluorescent image (b) at the same location as (a). FIG. 22 is a fluorescence image of a cross section (c-plane) of the GaN crystal produced in Example 11.

  Exemplary embodiments of a gallium nitride crystal, a group 13 nitride crystal, a crystal substrate, and a manufacturing method thereof according to the present invention will be explained below in detail with reference to the accompanying drawings.

[1] Crystal Production Method of Seed Crystal The production method of this embodiment is a needle crystal mainly composed of a group 13 nitride (for example, gallium nitride) as a group 13 nitride crystal (for example, gallium nitride crystal). 25 is a method of manufacturing by a flux method. In addition, since the acicular crystal | crystallization 25 is used as a seed crystal in the crystal manufacturing method mentioned later by [3], it may be described as the seed crystal 25.

  Next, the manufacturing method of the acicular crystal | crystallization 25 by the flux method is demonstrated. FIG. 1 is a schematic cross-sectional view of a crystal growth apparatus 1 that manufactures a seed crystal 25 in an embodiment of the present invention. As shown in FIG. 1, the crystal growth apparatus 1 includes a closed pressure vessel 11 made of stainless steel. The reaction vessel 12 is installed on the installation base 26 in the pressure vessel 11. The reaction vessel 12 is detachable from the installation base 26.

  The reaction vessel 12 is a vessel for carrying out crystal growth by holding a mixed melt 24 of an alkali metal and a substance containing at least a group 13 element. The operation of charging the raw material into the reaction vessel 12 is performed by putting the pressure vessel 11 in a glove box having an inert gas atmosphere such as argon gas.

  As an alkali metal as a raw material, sodium or a sodium compound (for example, sodium azide) is used. As another example, other alkali metals such as lithium and potassium, and compounds of the alkali metal are used. Also good. A plurality of types of alkali metals may be used.

  As a material containing a group 13 element as a raw material, for example, a group 13 element gallium is used, but as another example, other group 13 elements such as boron, aluminum, indium, or a mixture thereof may be used. .

The pressure vessel 11 is connected to the internal space 23 of the pressure vessel 11 with a gas supply pipe 14 for supplying nitrogen (N ₂ ) gas, which is a group 13 nitride crystal material, and a dilution gas. The gas supply pipe 14 branches into a nitrogen supply pipe 17 and a dilution gas supply pipe 20, and can be separated by valves 15 and 18, respectively.

  As the diluent gas, it is desirable to use an argon (Ar) gas that is an inert gas, but the present invention is not limited to this, and other inert gases may be used as the diluent gas.

  Nitrogen gas is supplied from a nitrogen supply pipe 17 connected to a gas cylinder of nitrogen gas and the like, and after the pressure is adjusted by the pressure control device 16, the nitrogen gas is supplied to the gas supply pipe 14 through the valve 15. On the other hand, a dilution gas (for example, argon gas) is supplied from a dilution gas supply pipe 20 connected to a gas cylinder or the like of the dilution gas, and the pressure is adjusted by a pressure controller 19, and then supplied through a valve 18. Supplied to the tube 14. The nitrogen gas and the dilution gas whose pressures are adjusted in this way are respectively supplied to the gas supply pipe 14 and mixed.

  A mixed gas of nitrogen and dilution gas is supplied from the gas supply pipe 14 through the valve 21 into the pressure resistant container 11. The pressure vessel 11 can be detached from the crystal growth apparatus 1 at the valve 21 portion.

  The gas supply pipe 14 is provided with a pressure gauge 22 so that the pressure in the pressure vessel 11 can be adjusted while the pressure gauge 22 monitors the total pressure in the pressure vessel 11.

  In this embodiment, the nitrogen partial pressure can be adjusted by adjusting the pressures of the nitrogen gas and the dilution gas with the valves 15 and 18 and the pressure control devices 16 and 19 as described above. Further, since the total pressure in the pressure vessel 11 can be adjusted, the total pressure in the pressure vessel 11 can be increased to suppress evaporation of alkali metal (for example, sodium) in the reaction vessel 12.

  The nitrogen partial pressure in the pressure vessel 11 in the crystal manufacturing method of the present embodiment is preferably in the range of 5 MPa to 8 MPa.

  Further, as shown in FIG. 1, a heater 13 is disposed on the outer periphery of the pressure vessel 11, and the temperature of the mixed melt 24 can be adjusted by heating the pressure vessel 11 and the reaction vessel 12.

  The crystal growth temperature of the mixed melt 24 in the crystal manufacturing method of the present embodiment is preferably in the range of 860 ° C. to 900 ° C.

  By heating the pressure vessel 11 and the reaction vessel 12 to the crystal growth temperature in this way, the group 13 element and alkali metal (which may contain impurities) in the reaction vessel 12 are melted and mixed and melted. A liquid 24 is formed. Further, by bringing nitrogen having the above partial pressure into contact with the mixed melt 24 and dissolving it in the mixed melt 24, nitrogen as a raw material for the group 13 nitride crystal can be supplied into the mixed melt 24. . (Mixed melt forming process)

  The material of the reaction vessel 12 is not particularly limited, and BN sintered bodies, nitrides such as P-BN, oxides such as alumina and YAG, carbides such as SiC, and the like can be used.

  The inner wall surface of the reaction vessel 12, that is, the portion where the reaction vessel 12 is in contact with the mixed melt 24, is preferably made of a material capable of crystal growth of a group 13 nitride. Examples of materials from which Group 13 nitrides can grow crystals include boron nitride (BN), pyrolytic BN (P-BN), nitrides such as AlN, alumina, yttrium aluminum garnet (YAG), etc. Examples thereof include oxides and stainless steel (SUS). More desirably, a boron nitride (BN) sintered body is used in a portion of the reaction vessel 12 in contact with the mixed melt 24 described above.

  The BN sintered body is obtained by sintering BN powder, and has a rougher surface and larger irregularities than pyrolytic BN (P-BN) produced by CVD (Chemical Vapor Deposition). For this reason, group 13 nitride (for example, gallium nitride) crystals are more easily nucleated on the surface of the BN sintered body than on the P-BN surface.

  In addition, since BN is a hexagonal nitride that is the same as a group 13 nitride (for example, GaN), a crystal nucleus of a group 13 nitride (for example, gallium nitride) is more easily generated on the surface than an oxide such as alumina.

  In this way, the reaction vessel 12, in particular, the portion in contact with the mixed melt 24 in the reaction vessel 12 is a BN sintered body, so that more needle-like shapes are used than when using a reaction vessel of P-BN or other oxides. Crystals can be made.

  In the above description, the BN sintered body is used as the material of the portion in contact with the mixed melt 24 of the reaction vessel 12. However, as another example, a sintered body of a group 13 element other than boron (Al, Ga, etc.) is used. It may be used.

  In a preferred embodiment, the number of moles of alkali metal relative to the total number of moles of a group 13 element (for example, gallium) and an alkali metal (for example, sodium) with respect to the raw material in the mixed melt 24 charged into the reaction vessel 12. Is preferably in the range of 75% to 90%, the crystal growth temperature of the mixed melt is in the range of 860 ° C. to 900 ° C., and the nitrogen partial pressure is preferably in the range of 5 MPa to 8 MPa.

  As a condition for carrying out the manufacturing method, for the mixed melt 24 in which the molar ratio of Group 13 element: alkali metal is 0.25: 0.75, for example, the crystal growth temperature is 860 to 870 ° C. More preferably, the nitrogen partial pressure is in the range of 5.5 to 6 MPa (see Examples 1 and 2). Further, for the mixed melt 24 in which the molar ratio of Group 13 element: alkali metal is 0.2: 0.8, for example, the crystal growth temperature is in the range of 890 to 900 ° C., and the nitrogen partial pressure is 6 to 8 MPa. (See Examples 6 and 8).

  According to the crystal manufacturing method of the present embodiment, by performing crystal growth under the above-described manufacturing conditions (temperature, nitrogen partial pressure, alkali metal molar ratio), it is possible to promote the spontaneous nucleus growth of the group 13 nitride crystal. In addition, the crystal growth rate of the group 13 nitride crystal having a hexagonal crystal structure in the −c-axis direction (see FIG. 2) can be remarkably increased. As a result, a needle-like crystal 25 (seed crystal 25) of a group 13 nitride (for example, gallium nitride) having no strain and having a long c-axis direction can be manufactured.

[2] Seed Crystal The group 13 nitride crystal according to the present embodiment is the needle crystal 25 (seed crystal 25) manufactured by the manufacturing method described above in [1].

  FIG. 2 is a schematic diagram for explaining the c-axis and the c-plane of the group 13 nitride needle-like crystal 25. According to the crystal manufacturing method described in [1], as shown in FIG. 2, the group 13 nitride needle-like crystal 25 elongated in the c-axis direction can be grown.

  Moreover, the figure which took the cross section about c surface orthogonal to c axis | shaft of FIG. 2 is shown in FIG. As shown in FIG. 3, the cross section (c-plane) perpendicular to the c-axis in the acicular crystal 25 is hexagonal or generally hexagonal. Further, the side surface of the needle-like crystal 25 corresponding to the hexagonal side is composed of an m-plane having a hexagonal crystal structure. Although not shown, the side surface of the needle-like crystal 25 may include a surface inclined with respect to the m plane connecting the m plane and the c plane.

  Here, the maximum diameter of the c-plane in the needle crystal 25 is referred to as a crystal diameter d. That is, the crystal diameter d is the length of the longest diagonal line of the hexagon forming the c-plane.

  According to the inventor's experience, it is desirable that the practical length of the needle-like crystal used as the seed crystal in the flux method is about 9 mm or more in consideration of holding the seed crystal. In addition, if the diameter of the seed crystal is too small, it is difficult to handle, and the seed crystal may be broken at the raw material preparation stage or the seed crystal installation stage.

  Therefore, the acicular crystal 25 according to the present embodiment has a hexagonal shape or a substantially hexagonal cross-sectional shape perpendicular to the c-axis, a c-axis length L of 9 mm or more, and a cross-section perpendicular to the c-axis. The crystal diameter d is 100 μm or more, and the ratio L / d between the c-axis length L and the crystal diameter d in a cross section perpendicular to the c-axis is 7 or more. (See Examples 1-9)

  Since the acicular crystal 25 of the present embodiment has the above-described size, it can be used as a seed crystal when a bulk crystal having a practical size is manufactured. Conventionally, there has been no report of producing a gallium nitride needle crystal having the above-mentioned size.

  According to the crystal manufacturing method described above in [1], the crystal is grown particularly efficiently in the longitudinal direction by adjusting the manufacturing conditions (temperature, nitrogen partial pressure, alkali metal molar ratio) within the above-mentioned preferable ranges. Can be made. As described above, the needle-like crystal 25 of group 13 nitride, which is longer than before, can be obtained. Further, according to the manufacturing method described above in [1], a group 13 nitride needle crystal 25 having a crystal diameter d of 100 μm or more in a cross section perpendicular to the c-axis can be obtained. As described above, according to the production method [1], it is possible to produce a long needle crystal 25 that can be a seed crystal of a bulk crystal having a practical size.

  In addition, the needle-like crystal 25 of gallium nitride according to the present embodiment has an emission spectrum at room temperature by excitation with an electron beam or ultraviolet light in the wavelength region of approximately 500 nm to 800 nm, and the peak of the emission intensity. Is in the wavelength region of 600 nm to 650 nm (see <Measurement result of photoluminescence>).

  That is, according to this, the needle-like crystal 25 can be made to emit orange light by irradiating an electron beam or ultraviolet rays. A gallium nitride crystal having such an emission spectrum has not been reported so far.

  Thus, according to the manufacturing method of [1] described above, sodium and gallium as raw materials are charged into the reaction vessel 12 and nitrogen gas is mixed and melted without adding an impurity raw material as a light emission center to the raw material. By melting to 24, a needle-like crystal 25 of gallium nitride that emits orange light can be produced.

  Further, the needle-like crystal 25 of gallium nitride according to this embodiment is characterized in that the peak intensity of light emission in the wavelength region of 600 nm to 650 nm is larger than the peak intensity of light emission from the vicinity of the band edge of gallium nitride. (See <Photoluminescence measurement results>).

The needle-like crystal 25 of gallium nitride according to this embodiment is characterized in that the dislocation density on the m-plane surface is less than 1 × 10 ⁶ cm ⁻² (refer to <Measurement result of transition density>).

  As a result, when a bulk crystal of a larger group 13 nitride crystal is grown using the acicular crystal 25 as a seed crystal, a crystal with a low dislocation density can be grown.

  Note that the gallium nitride crystal of this embodiment may be doped with impurities. For example, donor impurities such as Ge (germanium), O (oxygen), and Si (silicon), acceptors such as Mg (magnesium), Li (lithium), Sr (strontium), Ca (calcium), and Zn (zinc) Fluorescence or magnetism such as impurities, transition metals that develop magnetism such as Fe (iron), Mn (manganese), Cr (chromium), Eu (europium), Er (erbium), Tb (terbium), Tm (thulium) A rare earth element to be expressed, or a similar element such as B (boron), Al (aluminum), or In (indium) may be doped as an impurity. In addition, an impurity suitable for the purpose may be appropriately selected and doped.

[3] Crystal Manufacturing Method by Growing Seed Crystal The crystal manufacturing method according to the present embodiment uses the group 13 nitride needle crystal 25 described above in [2] as a seed crystal (seed crystal 25), and a flux method. Thus, the crystal growth step is performed in which the seed crystal 25 is further grown in a direction perpendicular to the c-axis to obtain a group 13 nitride crystal having a larger c-plane area.

  Next, a crystal manufacturing method by the flux method will be described. FIG. 4 is a schematic cross-sectional view for explaining the crystal growth apparatus 1 used in the crystal growth process for growing the seed crystal 25. Since the structure of the crystal growth apparatus 1 is the same as that described with reference to FIG. 1, the same reference numerals are given and description thereof is omitted here.

  The reaction vessel 12 is provided with the group 13 nitride needle crystal 25 (seed crystal 25) described above in [2]. The reaction vessel 12 is charged with a substance (for example, gallium) containing at least a group 13 element and an alkali metal (for example, sodium). The molar ratio of the substance containing the group 13 element and the alkali metal is not particularly limited, but the molar ratio of the alkali metal to the total number of moles of the group 13 element and the alkali metal should be 40 to 95%. Is preferred.

  The internal space 23 of the pressure vessel 11 is filled with nitrogen gas and dilution gas at a predetermined gas partial pressure. The nitrogen gas partial pressure in the gas is not particularly limited, but is preferably at least 0.1 MPa or more.

  The temperature of the mixed melt 24 in the crystal growth step is not particularly limited, but is preferably at least 700 ° C. or higher.

  Moreover, as a combination of the conditions of the crystal growth step, for example, the temperature of 900 ° C. and the nitrogen partial pressure of 6 MPa with respect to the mixed melt 24 having a molar ratio of group 13 nitride: alkali metal of 0.4: 0.6 It is preferable to refer to (see Examples).

  Under such conditions, the seed crystal 25 is grown in the radial direction, and a group 13 nitride crystal 27 is grown around the seed crystal 25 as shown in FIG. That is, in this crystal growth step, the m-plane of the seed crystal 25 becomes the crystal growth surface, and a group 13 nitride crystal is grown by the group 13 element and nitrogen supplied from the mixed melt 24. In this way, the group 13 nitride crystal 80 (see FIG. 5), 81 (see FIG. 6), 82 (see FIG. 7-1), 83 (FIG. 9-) in which the c-plane of the seed crystal 25 is enlarged. 1) can be produced.

  In this way, when the surrounding crystal 27 is grown using the m plane of the seed crystal 25 as a crystal growth plane, the dislocation density of the crystal 27 is affected by the quality of the m plane. On the other hand, according to the manufacturing method of the present embodiment, the seed crystal 25 described in [2] has a low transition density and a high quality, and therefore a group 13 nitride crystal 27 is grown from the seed crystal 25. Therefore, dislocations propagated from the seed crystal 25 to the crystal 27 can be reduced. As a result, the dislocation density of the group 13 nitride crystal 27 can be kept low, and larger and high quality group 13 nitride crystals 80 to 83 can be manufactured.

  In the crystal manufacturing method according to the present embodiment, the seed crystal 25 and the group 13 nitride crystal 27 grown from the seed crystal 25 can be made of the same material (for example, gallium nitride). Therefore, unlike the case of using a seed crystal of a different material such as AlN, the lattice constant and the thermal expansion coefficient are the same, and it is possible to eliminate the occurrence of dislocation due to the lattice mismatch and the difference in the thermal expansion coefficient. .

  Further, since the seed crystal 25 and the group 13 nitride crystal 27 are produced by the same crystal growth method (flux method), the seed crystal 25 and the group 13 nitride crystal 27 are produced by different methods. Compared to the case, it is possible to improve the consistency between the lattice constant and the thermal expansion coefficient, and it is possible to further suppress the occurrence of dislocations.

  As described above, the crystal manufacturing method according to the present embodiment can produce a group 13 nitride crystal having a practical size. In addition, a high-quality group 13 nitride single crystal having a low dislocation density can be produced as compared with the case where a different material is used as a seed crystal.

  Although the crystal manufacturing method by the flux method has been described above, the crystal manufacturing method is not particularly limited, and crystal growth is performed by a vapor phase growth method such as the HVPE method or a liquid phase method other than the flux method. It is good.

[4] Group 13 nitride crystal (bulk crystal)
The group 13 nitride crystal according to the present embodiment is a group 13 nitride crystal manufactured by the manufacturing method described above in [3].

  5, FIG. 6, FIG. 7-1, and FIG. 9-1 are schematic views showing examples of the group 13 nitride crystals 80, 81, 82, and 83 of the present embodiment. As shown in these figures, group 13 nitride crystals 80 (see FIG. 5), 81 (see FIG. 6), 82 (see FIG. 7-1), 83 (see FIG. 9-1) include group 13 nitride. The seed crystal 25 is contained inside the crystals 80 to 83.

  The group 13 nitride crystals 80 to 83 according to the present embodiment include at least a part of the group 13 nitride needle-like crystal 25 used as a seed crystal.

  Note that the position of the seed crystal 25 in the group 13 nitride crystals 80 to 83 only needs to be inside the group 13 nitride crystals 80 to 83, and the group 13 nitride is as shown in FIG. 5, FIG. 6, and FIG. It may be included near the center of the crystals 80 to 83 (near the center of the hexagonal section), or as shown in FIG. (Region close to the side).

  Such a crystal can be manufactured by growing the seed crystal 25 by the crystal manufacturing method described in [3]. That is, the group 13 nitride crystals 80 to 83 of the present embodiment are manufactured by uniformly growing the gallium nitride crystal 27 around the seed crystal 25 or by growing the crystal from the seed crystal 25 in a specific direction. be able to.

  Thus, the group 13 nitride crystals 80 to 83 of the present embodiment include at least a part of the seed crystal 25 inside, and the seed crystal 25 emits orange light as described above. The place can be visually confirmed. In addition, when the crystals 80 to 83 are processed, since the approximate direction of the crystal orientation is known by the seed crystal 25, the approximate direction of cutting the crystals 80 to 83 can be obtained.

  In the example of FIG. 5, for example, an m-plane or c-plane (see FIG. 2) is formed, and a group 13 nitride having a hexagonal pyramid shape with a hexagonal pyramid having a bottom surface on the hexagonal columnar crystal. Although the product crystal 80 is described, the shape of the group 13 nitride crystal is not particularly limited, and may be a hexagonal pyramid shape in which the m-plane is not formed. Further, the group 13 nitride crystal 27 may be doped with impurities.

  Further, according to the crystal manufacturing method of the present embodiment, since the seed crystal 25 having the length L of 9 mm or more described in [2] is used, the length L is 9 mm or more and the cross-sectional area is larger than the seed crystal 25 13. Group nitride crystals 80 to 83 can be obtained.

[5] Method for Manufacturing Crystal Substrate The method for manufacturing a crystal substrate according to this embodiment is a method for manufacturing a plurality of crystal substrates from the group 13 nitride crystals 80 to 83 described above in [4].

  Hereinafter, an example of the manufacturing method of the present embodiment will be described with reference to the drawings. Here, FIGS. 7-2 and 9-2 are schematic views showing directions in which group 13 nitride crystals 82 (see FIG. 7-1) and 83 (see FIG. 9-1) are sliced, respectively. FIGS. 8-1 to 8-3 and FIGS. 10-1 to 10-3 are schematic views showing an example of the crystal substrate 100 (100a to 100f) obtained after slicing.

  The manufacturing method of this embodiment includes a step of cutting a crystal substrate so as to include at least part of the seed crystal 25 when slicing the group 13 nitride crystals 80 to 83.

  In this case, the crystal substrate 100a shown in FIG. 8-1 may be obtained by slicing perpendicularly to the c-axis of the seed crystal 25 as shown by a one-dot chain line P1 in FIG. 7-2. Further, as shown by a one-dot chain line P2 in FIG. 7-2, the crystal substrate 100b shown in FIG. Further, as shown by a one-dot chain line P3 in FIG. 7-2, the crystal substrate 100c shown in FIG. 8-3 may be obtained by slicing perpendicularly to the c-axis of the seed crystal 25.

  The crystal substrate 100 (100a to 100f) is subjected to various processing such as molding and surface processing after slicing, as shown in FIGS. 8-1 to 8-3 and FIGS. 10-1 to 10-3. It is processed into a group 13 nitride crystal substrate 100 (100a to 100f).

  According to the manufacturing method of this embodiment, the crystal substrate 100 is cut out from the group 13 nitride crystals 82 and 83 having a length in the c-axis direction of 9 mm or more and a crystal diameter d of 100 μm or more as described above. In both cases where the surface other than the c-plane is cut out, the main surface of the substrate can be made large, and the crystal substrate 100 having a practical size that can be used for various semiconductor devices can be manufactured.

  Moreover, since it can cut out in any direction in this way, the {0001} plane (c plane), {10-10} plane (m plane), {11-20} plane (a plane), {10− A large-area crystal substrate 100 whose main surface is an arbitrary crystal plane such as an 11} plane, a {20-21} plane, and a {11-22} plane can be manufactured.

[6] Crystal Substrate The crystal substrate according to this embodiment is the crystal substrate 100 manufactured by the manufacturing method described above in [5]. That is, the crystal substrate 100 of this embodiment includes at least a part of the seed crystal 25 described in [2].

  As shown in FIGS. 8-1 to 8-3 and FIGS. 10-1 to 10-3, the crystal substrate 100 (100a to 100f) of the present embodiment includes the seed crystal 25 used in the crystal manufacturing process. At least a part of the surface of the seed crystal 25 is covered with a group 13 nitride crystal 27 grown from the seed crystal 25. The seed crystal 25 may be entirely covered with a group 13 nitride crystal 27, or at least part of the surface thereof may be covered.

  In addition, the position of the seed crystal 25 is not limited as long as the seed crystal 25 is included in the group 13 nitride crystal 27. For example, as shown in FIGS. 8A and 8B, the seed crystal 25 may be arranged near the center of the main surface of the crystal substrate 100. In this case, the c-axis of the seed crystal 25 may be arranged so as to be perpendicular to the substrate main surface as shown in FIG. 8A, or as shown in FIG. It may be inclined with respect to.

  Further, as shown in FIGS. 8-3 and 10-3, the seed crystal 25 may be arranged so that the c-axis of the seed crystal 25 is parallel to the main surface of the substrate. Further, the seed crystal 25 may be disposed in the vicinity of the center of the main surface of the crystal substrate 100. For example, as shown in FIGS. 10-1 and 10-2, the seed crystal 25 is a substrate of the crystal substrate 100. You may arrange | position at the peripheral part of the main surface.

  According to this embodiment, since the seed crystal 25 emits orange light as described above in [2], the position of the seed crystal 25 on the crystal substrate 100 can be easily determined. Therefore, for example, when the electrical characteristics of the seed crystal 25 are different from those of the crystal 27 grown around the seed crystal 25, the quality of the device can be improved by manufacturing the device while avoiding the seed crystal 25. it can.

[7] Crystal Manufacturing Method by Multilayer Growth The crystal manufacturing method of this embodiment includes a step of stacking a group 13 nitride crystal on at least one main surface of the crystal substrate 100 described in [6]. Features.

  FIGS. 11A, 11B, and 13A are diagrams illustrating an example of the crystal 90 that has been stacked and grown. 11-1, 12-1, and 13-1, a group 13 nitride crystal 28 is grown (stacked growth) on the main surface of the crystal substrate 100 (100a, 100b, 100c). In this way, Group 13 nitride crystals 90, 91, 92 in which the crystals 28 are stacked on the crystal substrate 100 are manufactured.

  The crystal growth method of the crystal 28 is not particularly limited, and a vapor phase growth method (see Example 15) such as the HVPE method or a liquid phase method (see Example 16) such as the flux method is used. be able to. In addition, in the step of growing the layers, the crystal 28 may be doped with impurities.

  As described above, according to the manufacturing method of the present embodiment, the entire surface (the entire region) of the substrate main surface of the group 13 nitride crystal substrate 100 (100a, 100b, 100c) can be crystal-grown. A group 13 nitride crystal 28 having a main surface with substantially the same area can be grown on the crystal substrate 100.

  In addition, according to the present embodiment, the crystals 28 having the same quality as the crystal substrate 100 can be grown because the layers are grown on the high-quality crystal substrate 100. That is, crystal orientation and dislocation density can be made equal in the crystal 28 and the crystal substrate 100.

[8] Crystals Produced by Stack Growth Group 13 nitride crystals according to the present embodiment are group 13 nitride crystals 90, 91, and 92 manufactured by the manufacturing method described above in [6].

  As shown in FIGS. 11-1, 12-1, and 13-1, in the group 13 nitride crystals 90, 91, and 92, the group 13 is formed on at least one substrate main surface of the crystal substrates 100a, 100b, and 100c. Nitride crystals 28 are stacked and grown.

  In the group 13 nitride crystal shown in FIGS. 11-1, 12-1, and 13-1, the group 13 nitride crystal 28 is formed on the crystal substrate 100 (100a, 100b, 100c) shown in FIG. However, the group 13 nitride crystal 28 may be grown on the crystal substrate 100 (100d, 100e, 100f) shown in FIG.

[9] Manufacturing Method for Cutting Crystals Grown and Producing Crystal Substrate The crystal substrate manufacturing method according to the present embodiment is obtained by cutting the group 13 nitride crystals 90, 91, 92 described in [8] above. And a step of manufacturing a group 13 nitride crystal substrate.

  FIGS. 11-2, 12-2, 13-2 and FIGS. 11-3, 12-3, and 13-3 are diagrams for explaining the crystal substrate slicing method according to the present embodiment. First, as shown in FIGS. 11-2, 12-2, and 13-2, the group 13 nitride crystal 90 is cut into a crystal substrate 101 including the crystal substrate 100 and a crystal 28 b not including the crystal substrate 100. Then, as shown in FIGS. 11-3, 12-3, and 13-3, the crystal 28b is sliced into a plurality of crystal substrates 28b1 to 28b6. Thereafter, each of the crystal substrates 101, 28b1 to 28b6 is subjected to external processing and subjected to processing such as polishing and surface treatment.

  That is, the manufacturing method of this embodiment includes a step of cutting out the group 13 nitride crystals 90, 91, 92 without including the seed crystal 25. As a result, a large number of homogeneous crystal substrates 28b1 to 28b6 can be manufactured.

  Note that the thickness of the crystal 28 laminated on the crystal substrate 100 is not particularly limited. For example, the crystal 28b portion separated in FIG. 11A is not grown and the target thickness of the crystal substrate 101 is obtained. The crystal substrate 101 may be manufactured by growing the crystal 28a by such a thickness.

  Further, in FIGS. 11-3, 12-3, and 13-3, the crystal 28b is sliced in parallel to the main surface of the substrate, but the slicing direction of the crystal 28b is not particularly limited, It can be sliced in any direction.

  According to the manufacturing method of the present embodiment, the {0001} plane (c plane), {10-10} plane (m plane), {11-20} plane (a plane), {10-11} plane, {20 A large number of Group 13 nitride crystal substrates (28b1 to 28b6), each having a crystal plane as a principal plane, such as a −21} plane and a {11-22} plane, can be produced.

  Further, by using the crystal substrate (28b1 to 28b6) of each crystal plane manufactured by the manufacturing method of this embodiment as a new seed crystal, the crystal of each crystal plane is further increased by the manufacturing method of [7] and [9] above. It is also possible to manufacture a substrate.

  Further, according to the manufacturing method of the present embodiment, since the crystal substrate (28b1 to 28b6) is cut out from the crystal 28 having a low dislocation density as described above, a high quality crystal substrate (28b1 to 28b6) having a low transition density is manufactured. can do.

[10] Crystal Substrate Manufactured from Stacked Crystals The crystal substrate according to this embodiment is the crystal substrate 101 manufactured by the manufacturing method described above in [8]. That is, the crystal substrate 101 of the present embodiment is obtained by stacking the crystals 28a on the crystal substrate 100 (100a to 100f).

  FIG. 14A to FIG. 14E are diagrams illustrating an example of the crystal substrate 101 manufactured by using the stacked growth. That is, FIG. 14A is a diagram illustrating a crystal substrate 101a manufactured by stacking and growing a crystal 28 on the crystal substrate 100a. FIG. 14B is a diagram illustrating a crystal substrate 101b manufactured by stacking and growing a crystal 28 on the crystal substrate 100b. FIG. 14C is a diagram illustrating a crystal substrate 101c (101f) manufactured by stacking crystals 28 on the crystal substrate 100c (100f). FIG. 14-4 is a diagram showing a crystal substrate 101d manufactured by stacking and growing a crystal 28 on the crystal substrate 100d. FIG. 14-5 is a diagram illustrating a crystal substrate 101e manufactured by stacking and growing a crystal 28 on the crystal substrate 100e.

  As shown in each figure, the seed crystal 25 is not included in the portion of the crystal 28. Therefore, in the crystal substrate 101 (101a to 101f), the seed crystal 25 is not exposed on the surface on the crystal 28 side (surface of the substrate main surface). Therefore, when the surface on the crystal 28 side is used for device manufacture, the crystal 28 having uniform crystallinity and characteristics can be used, and the performance of the device can be improved.

  Further, as described above in [2], the seed crystal 25 emits orange light, but the crystal 27 grown from the seed crystal 25 and the stacked crystal 28 are colorless and transparent, so the position of the seed crystal 25 is visually confirmed. be able to.

  As described above, according to the present embodiment, the position and direction of the seed crystal 25 can be visually confirmed without exposing the seed crystal 25 to the surface. Therefore, it is possible to achieve both high performance of the device and efficiency in manufacturing the device. it can.

  Examples are shown below to describe the present invention in more detail, but the present invention is not limited to these Examples. The reference numerals correspond to the configuration of the crystal growth apparatus described with reference to FIGS.

(Example 1) <Production Example 1 of Seed Crystal>
A molar ratio of gallium and sodium was charged to a reaction vessel 12 made of BN sintered body having an inner diameter of 55 mm at a ratio of 0.25: 0.75.

  In a glove box, in a high purity Ar gas atmosphere, the reaction vessel 12 is placed in the pressure vessel 11, the valve 21 is closed, the reaction vessel 12 is shut off from the outside atmosphere, and Ar gas is filled. The pressure vessel 11 was sealed.

  Thereafter, the pressure vessel 11 was taken out of the glove box and incorporated into the crystal growth apparatus 1. That is, the pressure vessel 11 was installed at a predetermined position with respect to the heater 13 and connected to a gas supply pipe 14 of nitrogen gas and argon gas at the valve 21 portion.

  Next, the valve 21 and the valve 18 were opened, Ar gas was injected from the dilution gas supply pipe 20, the pressure was adjusted by the pressure control device 19, the total pressure in the pressure vessel 11 was set to 1 MPa, and the valve 18 was closed.

  Then, nitrogen gas was introduced from the nitrogen gas supply pipe 17, the pressure was adjusted by the pressure control device 16, the valve 15 was opened, and the total pressure in the pressure resistant vessel 11 was set to 3.2 MPa. That is, the partial pressure of nitrogen in the internal space 23 of the pressure vessel 11 is 2.2 MPa, and the argon partial pressure: nitrogen partial pressure is 1: 2.2. Moreover, it is nitrogen partial pressure: total pressure = 2.2: 3.2. Thereafter, the valve 15 was closed and the pressure control device 16 was set to 8 MPa.

  Next, the heater 13 was energized to raise the temperature of the reaction vessel 12 to the crystal growth temperature. In Example 1, the crystal growth temperature was 860 ° C.

  At the crystal growth temperature, gallium and sodium in the reaction vessel 12 are melted to form a mixed melt 24. Note that the temperature of the mixed melt 24 is the same as the temperature of the reaction vessel 12. Further, when the temperature is raised to this temperature, in the crystal growth apparatus 1 of this embodiment, the gas in the pressure resistant vessel 11 is heated and the total pressure becomes 8 MPa. That is, since nitrogen partial pressure: total pressure = 2.2: 3.2 as described above, the nitrogen partial pressure at this time is 5.5 MPa.

  Next, the valve 15 was opened, the nitrogen gas pressure was set to 8 MPa, and the pressure vessel 11 and the nitrogen supply pipe 17 were brought into a pressure equilibrium state. By doing in this way, when nitrogen in the pressure vessel 11 is consumed by crystal growth of gallium nitride, the consumed nitrogen gas can be replenished in the pressure vessel 11, The nitrogen partial pressure can be maintained at 5.5 MPa.

  In this state, the reaction vessel 12 was held for 250 hours to perform crystal growth of gallium nitride, and then the heater 13 was controlled to lower the pressure vessel 11 to room temperature (about 20 ° C.).

  When the pressure vessel 11 was opened after the pressure of the gas in the pressure vessel 11 was lowered, a large number of GaN needle crystals 25 were grown in the reaction vessel 12. The gallium nitride needle crystal 25 was grown in the −c-axis ([000-1]) direction.

  The crystal-grown GaN needle crystal 25 is colorless and transparent, its crystal diameter d is 200-500 μm, its length L is about 10-18 mm, and the ratio L / of the length L to the crystal diameter d d was about 20-90. The GaN needle-like crystal 25 grew substantially parallel to the c-axis, and an m-plane (see FIG. 3) was formed on the side surface.

  FIG. 18 is a photograph of the GaN needle crystal 25 produced in Example 1. The length was 18 mm. The GaN needle crystal 25 starts growing from the BN surface of the reaction vessel 12, and grows with the nitrogen polar face side (−c axis direction) of the C face of the GaN needle crystal as the growth direction. The time average growth rate in the vertical direction was estimated to be about 40 to 72 μm / h, which was significantly faster than the growth rate in the width direction.

  When the GaN needle crystals 25 were etched with an acidic solution and the c-plane and m-plane were observed, there were no etch pits on both sides, and there were only a few. Since the etch pits are considered to correspond to dislocations, it has been found that the GaN needle crystals 25 have few dislocations and are of high quality.

(Example 2) <Production Example 2 of Seed Crystal>
Crystal growth was carried out in the same manner as in Example 1 except that the crystal growth temperature was 870 ° C. and the nitrogen partial pressure was 6 MPa, and the molar ratio of gallium to sodium was 0.25: 0.75. As a result, a large number of GaN needle crystals 25 grown to a length of 10 mm to 14 mm were obtained.

  In addition, a needle-like crystal 25 having a length of about 20 mm and a needle-like crystal 25 having a length of about 21 mm each having one microcrystal attached to the tip thereof were grown one by one. The diameter d of these acicular crystals 25 was about 150 to 500 μm, and the cross-sectional shape perpendicular to the c-axis of the crystals was a hexagon.

  Note that the GaN needle-like crystal starts growing from the BN surface of the reaction vessel 12 and grows with the nitrogen polar face side of the C-plane of the GaN needle-like crystal 25 as the growth direction, as in the example. That is, it grew in the -c axis ([000-1]) direction. The time average growth rate in the length direction was estimated to be about 40 to 84 μm / h, which was significantly faster than the growth rate in the width direction.

(Example 3) <Seed crystal production example 3>
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 870 ° C., the nitrogen partial pressure was 6 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, a GaN needle crystal 25 having a maximum length of about 10 mm was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

Example 4 <Seed Crystal Production Example 4>
Crystal growth was performed in the same manner as in Example 1 except that the nitrogen partial pressure was set to 6 MPa, with the crystal growth temperature set to 860 ° C., and the molar ratio of gallium to sodium set to 0.25: 0.75. As a result, a GaN needle crystal 25 having a maximum length of about 10 mm was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

(Example 5) <Production Example 5 of Seed Crystal>
Crystal growth was performed in the same manner as in Example 1 except that the nitrogen partial pressure was 5 MPa, with the crystal growth temperature set at 860 ° C. and the molar ratio of gallium to sodium set to 0.25: 0.75. As a result, a GaN needle crystal 25 having a maximum length of about 10 mm was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

Example 6 <Seed Production Example 6>
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 900 ° C., the nitrogen partial pressure was 6 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, a GaN needle crystal 25 grown to a length of about 15 mm at maximum was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

(Example 7) <Production Example 7 of Seed Crystal>
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 900 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.1: 0.9. As a result, a GaN needle crystal 25 grown to a length of about 9 mm at the maximum was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

(Example 8) <Production Example 8 of Seed Crystal>
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 890 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, a GaN needle crystal 25 grown to a length of about 10 to 13 mm was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

(Example 9) <Production Example 9 of Seed Crystal>
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 900 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, a GaN needle crystal 25 grown to a length of about 10 mm was obtained.

  The diameter d of the obtained acicular crystal 25 was about 100 to 400 μm, and the cross-sectional shape perpendicular to the c-axis of the crystal was a hexagon. The GaN needle crystal 25 was grown in the −c axis ([000-1]) direction.

(Comparative Example 1)
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 910 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, a small amount of GaN microcrystal having a size of about 100 microns was obtained, but a GaN needle crystal 25 having a length of 9 mm or more was not obtained.

(Comparative Example 2)
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 890 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.05: 0.95. As a result, a large number of GaN microcrystals having a size of about 100 microns grew on the inner wall of the crucible, but GaN needle crystals 25 having a length of 9 mm or more were not obtained.

(Comparative Example 3)
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 850 ° C., the nitrogen partial pressure was 8 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, many GaN plate crystals having a hexagonal diagonal line length of about several hundred microns and several GaN plate crystals having a hexagonal diagonal line length of about 1 mm were obtained. However, a GaN needle crystal 25 having a length of 9 mm or more was not obtained.

(Comparative Example 4)
Crystal growth was performed in the same manner as in Example 1 except that the crystal growth temperature was 870 ° C., the nitrogen partial pressure was 9 MPa, and the molar ratio of gallium to sodium was 0.2: 0.8. As a result, several plate-like GaN microcrystals having several GaN columnar crystals having a length of about 1 mm and hexagonal diagonals having a length of about several hundred microns were obtained. However, a GaN needle crystal 25 having a length of 9 mm or more was not obtained.

  As is clear from Examples 1 to 9 and Comparative Examples 1 to 4 described above, the conditions for carrying out the method for producing the needle crystal (seed crystal) 25 are the number of moles of sodium relative to the total number of moles of gallium and sodium. Is preferably in the range of 75% to 90%, the crystal growth temperature of the mixed melt is in the range of 860 ° C. to 900 ° C., and the nitrogen partial pressure is preferably in the range of 5 MPa to 8 MPa.

  Further, as is clear from Examples 1 and 2, the conditions for carrying out the method for producing the needle-like crystal (seed crystal) 25 are a group 13 element: alkali metal molar ratio of 0.25: 0.75. For the mixed melt 24, it is more preferable that the crystal growth temperature is in the range of 860 to 870 ° C. and the nitrogen partial pressure is in the range of 5.5 to 6 MPa.

  Furthermore, as apparent from Examples 6 and 8, the conditions for carrying out the method for producing the needle-like crystal (seed crystal) 25 are a group 13 element: alkali metal molar ratio of 0.2: 0.8. For the mixed melt 24, it is more preferable that the crystal growth temperature is in the range of 890 to 900 ° C. and the nitrogen partial pressure is in the range of 6 to 8 MPa.

  Under such more preferable conditions, as is clear from Examples 1 to 9, for example, the length L of the crystal is 10 mm or more, and the ratio of length L: crystal diameter d is about 7: 1 or more, Alternatively, a longer group 13 nitride needle-like crystal 25 having L: d of 15: 1 or more can be obtained.

  Next, the results of various measurements performed on the GaN needle crystals 25 manufactured in Examples 1 to 9 will be described.

<Measurement result of dislocation density>
The density of etch pits formed by etching the m-plane surface of the GaN needle crystal 25 produced in Example 1 to Example 9 with acid (mixed acid of phosphoric acid and sulfuric acid, 230 ° C.) was calculated. The etch pit density was 10 ¹ to 10 ⁴ cm ⁻² . Since the etch pits are considered to correspond to dislocations, it was found that the dislocation density of the GaN needle crystals 25 is 10 ¹ to 10 ⁴ cm ⁻² or less.

As described above, according to the measurement result, the acicular crystal 25 of the GaN crystal manufactured by the manufacturing method described above in [1] has a dislocation density on the m-plane surface lower than 1 × 10 ⁶ cm ^−2. it is obvious.

<Measurement results of impurity concentration>
The impurity concentration in the GaN needle crystals 25 produced in Examples 1 to 9 was measured by secondary ion mass spectrometry (SIMS). As a result, the oxygen concentration in the crystal was 5 × 10 ¹⁷ cm ⁻³ , which is the background level of the analyzer. In the analyzer in which the oxygen background level was lowered to 2 × 10 ¹⁷ cm ⁻³ , the detected oxygen concentration was also lowered to the background level (2 × 10 ¹⁷ cm ⁻³ ). It can be inferred that the oxygen concentration inside is even smaller.

Carbon, hydrogen, and sodium concentrations were also detected in the background level of secondary ion mass spectrometry (carbon: 3 × 10 ¹⁵ cm ⁻³ , hydrogen: 3 × 10 ¹⁶ cm ⁻³ , sodium: 4 × 10 ¹³ cm ⁻³ ). Further, boron (B) was detected in a range of about 2 × 10 ¹⁸ to 2 × 10 ¹⁹ cm ⁻² , although there was variation depending on the crystal.

  Therefore, it can be seen that the GaN needle crystals 25 manufactured in Examples 1 to 9 are high-quality GaN crystals in which impurities (oxygen, carbon, hydrogen, sodium) are suppressed to a low concentration. It was.

<Observation results with a fluorescence microscope>
The GaN needle crystals 25 produced in Examples 1 to 9 were observed with a fluorescence microscope. As the light source of the fluorescence microscope, one having a wavelength of 320 to 400 nm and a peak wavelength of 370 nm was used. A fluorescent image with a wavelength ≧ 420 nm was observed through the filter. As for the crystal, an orange fluorescent image was observed.

  FIG. 19 is a fluorescence micrograph of the m-plane of the GaN needle crystal 25 produced in Example 2. As shown in FIG. 19, an orange fluorescent image was observed.

<Photoluminescence measurement results>
The photoluminescence (PL) of the GaN needle crystals 25 produced in Examples 1 to 9 was measured at room temperature. A He—Cd laser having a wavelength of 325 nm was used as the excitation light source.

  FIG. 20 is a room-temperature photoluminescence spectrum of the GaN needle crystal 25 manufactured in Example 2 of the present invention. As shown in FIG. 20, in the photoluminescence spectrum, light emission from the vicinity of the band edge of gallium nitride (near 364 nm) and broad light emission from 500 nm to 800 nm having an intensity peak near 625 nm were observed. Further, the peak intensity of the broad emission from 500 nm to 800 nm was stronger than the peak intensity of the emission from the vicinity of the band edge.

  Further, as illustrated in FIG. 20, also in the GaN needle crystal 25 manufactured in Examples 1 to 9, the photoluminescence spectrum shows light emission from the vicinity of the band edge of gallium nitride (near 364 nm). Broad emission from 500 nm to 800 nm was observed. Further, the peak intensity of broad emission from 500 nm to 800 nm was larger than the peak intensity of emission near the band edge (near 364 nm).

  Note that the intensity peak of broad emission from 500 nm to 800 nm varies somewhat depending on the crystal, and the intensity peak is 625 nm or 640 nm as an example, but as a result of having an intensity peak at approximately 600 nm to 650 nm. there were.

  Conventionally, in a photoluminescence emission spectrum in which a GaN crystal is excited and irradiated by irradiating an electron beam or ultraviolet light, a yellow band having a peak in the vicinity of 550 nm as the emission on the longer wavelength side than the emission near the band edge (near 364 nm). Luminescence called (Yellow Band) has been reported.

  However, in the GaN needle crystals 25 manufactured in Examples 1 to 9, light emission different from that of the yellow band having a peak in the vicinity of 600 nm to 650 nm on the longer wavelength side than the yellow band was observed. The light emission in the vicinity of 600 nm to 650 nm is light emission in a wavelength region that has not been reported so far.

  Further, cathodoluminescence (CL) measurement was performed on the GaN needle crystals 25 produced in Examples 1 to 9, and light emission in the same wavelength range as described above was observed.

(Example 10) <Growth example 1 of seed crystal>
In this example, a GaN crystal 80 was manufactured by performing a crystal growth process of gallium nitride using a needle crystal having a width of 500 μm and a length of 20 mm as the seed crystal 25. In this example, crystal growth was performed using the crystal growth apparatus 1 shown in FIG.

  First, the pressure vessel 11 was separated from the crystal growth apparatus 1 at the valve 21 portion and placed in a glove box in an Ar atmosphere. Next, a seed crystal was placed in a reaction vessel 12 made of a BN sintered body and having an inner diameter of 55 mm. The seed crystal was inserted and held by making a hole with a depth of 4 mm in the bottom of the reaction vessel 12. Next, sodium (Na) was heated to be liquefied and placed in the reaction vessel 12, and after the sodium solidified, gallium (Ga) was added. In this example, the molar ratio of gallium to sodium was 0.4: 0.6.

  Thereafter, the reaction vessel 12 was placed in the pressure resistant vessel 11 in a high purity Ar gas atmosphere in the glove box. And the valve | bulb 21 was closed and the pressure-resistant container 11 with which Ar gas was filled was sealed, and the inside of reaction container 12 was interrupted | blocked from the external atmosphere.

  Next, the pressure vessel 11 was taken out of the glove box and incorporated in the crystal growth apparatus 1. That is, the pressure vessel 11 was installed at a predetermined position with respect to the heater 13 and connected to the gas supply pipe 14 at the valve 21 portion.

  Thereafter, the valve 21 and the valve 18 were opened, Ar gas was introduced from the dilution gas supply pipe 20, the pressure was adjusted by the pressure control device 19, the total pressure in the pressure-resistant vessel 11 was adjusted to 0.75 MPa, and the valve 18 was closed.

  Then, nitrogen gas was introduced from the nitrogen supply pipe 17, the pressure was adjusted by the pressure controller 16, the valve 15 was opened, and the total pressure in the pressure-resistant vessel 11 was set to 3 MPa. That is, the nitrogen partial pressure in the internal space 23 of the pressure vessel 11 is 2.25 MPa. Thereafter, the valve 15 was closed and the pressure control device 16 was set to 8 MPa.

  Next, the heater 13 was energized, and the reaction vessel 12 was heated to the crystal growth temperature. The crystal growth temperature was 900 ° C. Since the total pressure in the pressure vessel 11 at 900 ° C. was measured by the pressure gauge 22 as 8 MPa, the nitrogen partial pressure in the pressure vessel 11 at 900 ° C. was 6 MPa.

  Then, similarly to the operation in Example 1, the valve 15 was opened, the nitrogen gas pressure was set to 8 MPa, and in this state, the reaction vessel 12 was held for 1000 hours to grow gallium nitride crystals.

  As a result, in the reaction vessel 12, the GaN needle crystal 25 was used as a seed crystal, the crystal diameter increased in the direction perpendicular to the c-axis, and the GaN crystal 80 having a larger crystal diameter was grown (FIG. 4). reference). The crystal-grown GaN crystal 27 was colorless and transparent. The crystal diameter of the GaN crystal 80 was 20 mm, and the length was 47 mm. An m-plane was formed on the crystal side surface of the GaN crystal 80.

  When the c-plane of the GaN crystal 80 was cut out and polished and then etched with an acidic solution, only a few etch pits were observed. Compared with the GaN crystal using a conventional AlN needle crystal as a seed crystal, the dislocation was much less and the quality was high.

  As is clear from Example 10, the conditions for carrying out the crystal manufacturing method are as follows: the molar ratio of gallium to sodium is 0.4: 0.6, the nitrogen partial pressure is 6 MPa, and the crystal growth temperature is 900 ° C. It is preferable to do this. Under such conditions, a larger and higher quality GaN crystal can be produced.

Example 11 <Seed crystal growth example 2>
In this example, a GaN crystal 80 was manufactured by performing a gallium nitride crystal growth process using a needle crystal having a width of 300 μm and a length of about 9 mm as the seed crystal 25. In this example, crystal growth was performed using the crystal growth apparatus 1 shown in FIG. As the reaction vessel 12, a vessel made of a BN sintered body having an inner diameter of 23 mm and a depth of 30 mm was used.

  The molar ratio of gallium to sodium was 0.5: 0.5. The crystal growth temperature was 885 ° C., the nitrogen partial pressure was 6 MPa (total pressure 8 MPa), and the crystal growth time was 200 hours. (Note that the total pressure in the pressure vessel 11 at room temperature before the temperature rise was 3.1 MPa, the nitrogen partial pressure was 2.32 MPa, and the Ar partial pressure was 0.78 MPa.)

  As a result, the crystal 27 grows in the reaction vessel 12 so that the crystal diameter d of the seed crystal 25 increases in the direction perpendicular to the c-axis, and the GaN crystal 80 having a larger crystal diameter (see FIG. 5) grows. Was. The crystal diameter d of the GaN crystal 80 was 0.6 mm, and the length was about 9 mm including the part of the seed crystal inserted into the reaction vessel 12. In addition, an m-plane was formed on the crystal side surface.

  By the way, when a plurality of crystal planes having different plane orientations grow simultaneously, a plurality of growth domains (sectors) grown in different crystal growth directions may be formed. The boundary surface between adjacent growth domains is called a growth domain boundary (sector boundary). In such a growth region, the optical characteristics of the respective growth regions may be different. Also at the boundary of the growth domain, some impurities and defects are segregated or the crystal structure is distorted, and the optical characteristics such as reflectance, absorptivity, transmittance, and refractive index are different from other crystal parts. Thus, the boundary of the growth domain may be clearly observed.

  In addition, when the crystal growth rate fluctuates during crystal growth, the amount of defects generated and the amount of solid solution of impurities also fluctuate, and growth stripes may be formed in a plane along a specific crystal plane. . Such growth fringes may be clearly observed due to differences in optical characteristics such as reflection, absorption, transmission, refraction, and the like from other parts in the crystal, or coloring due to impurities.

  However, the portion of the crystal 27 grown in this example was colorless and transparent, and no growth domain boundary or other growth stripes were observed.

  Next, the side surface (m-plane) and the cross section of the GaN crystal 80 were observed with a fluorescence microscope. As the light source of the fluorescence microscope, one having a wavelength of 320 to 400 nm and a peak wavelength of 370 nm was used. The fluorescence image was observed through a filter with a wavelength ≧ 420 nm.

  FIG. 21 is a microscopic image (a) of the side surface (m-plane) of the GaN crystal 80 manufactured in Example 11, and a fluorescent image (b) at the same location as (a). Note that visible light was used as the light source (a). As shown in FIG. 21A, a flat crystal surface was observed on the side surface (m-plane) of the GaN crystal 80. Further, as shown in FIG. 21B, it was observed that the electronic state of the seed crystal 25 was excited by ultraviolet rays (320 to 400 nm), and the seed crystal 25 emitted orange light. Note that visible light emission from the crystal 27 grown around the seed crystal 25 was not observed.

  FIG. 22 is a fluorescence image of a cross section (c-plane) of the GaN crystal 80. As shown in FIG. 22, the hexagonal seed crystal 25 inside the GaN crystal 80 emitted light and was observed in orange. Further, in the crystal 27 grown around the seed crystal 25, no clear growth domain boundary or growth stripe is observed inside the crystal 27, and light from the seed crystal 25 is guided through the colorless and transparent crystal. Was observed.

  Next, the photoluminescence of the c-plane of the GaN crystal 80 was measured at room temperature. A He—Cd laser having a wavelength of 325 nm was used as the excitation light source. In the photoluminescence spectrum of the seed crystal 25, light emission from the vicinity of the band edge (near 364 nm) of gallium nitride and light emission at about 500 nm to 800 nm with an intensity peak at 625 nm (600 nm to 650 nm) were observed. Moreover, the broad light emission from 500 nm to 800 nm was stronger than the light emission from the vicinity of the band edge.

  On the other hand, in the photoluminescence spectrum of the crystal 27 grown around the seed crystal 25, strong light emission from the vicinity of the band edge of gallium nitride (near 364 nm) was observed, but broad light emission from 500 nm to 800 nm was observed. Was not.

(Example 12) <Seed crystal growth example 3>
In this example, a GaN crystal 80 was manufactured by performing a crystal growth process of gallium nitride using a needle crystal having a width of 500 μm and a length of 20 mm as the seed crystal 25. In this example, crystal growth was performed using the crystal growth apparatus 1 shown in FIG. As the reaction vessel 12, a vessel made of a BN sintered body having an inner diameter of 55 mm and a depth of 60 mm was used.

  Further, the molar ratio of gallium to sodium was set to 0.4: 0.6. The crystal growth temperature was 900 ° C., the nitrogen partial pressure was 6 MPa (total pressure 8 MPa), and the crystal growth time was 1000 hours. (In addition, the total pressure in the pressure vessel 11 at room temperature before the temperature rise was 3 MPa, the nitrogen partial pressure was 2.25 MPa, and the Ar partial pressure was 0.75 MPa.)

  As a result, the crystal 27 grows in the reaction vessel 12 so that the crystal diameter d of the seed crystal 25 increases in the direction perpendicular to the c-axis, and the GaN crystal 80 having a larger crystal diameter (see FIG. 5) grows. Was. The crystal diameter d of the GaN crystal 80 was 20 mm, and the length was 47 mm. In addition, an m-plane was formed on the crystal side surface. The crystal 27 in the portion where the crystal had grown was colorless and transparent.

  When the c-plane of the GaN crystal 80 was cut out and polished, and then etched with an acidic solution and observed, only a few etch pits were observed. Compared to the GaN crystal in which the aluminum nitride needle crystal was grown by the conventional crystal manufacturing method, it was found that the dislocation was much less and the quality was high.

  Next, the photoluminescence in the c-plane of the cut GaN crystal 80 was measured at room temperature. A He—Cd laser having a wavelength of 325 nm was used as the excitation light source. In the photoluminescence spectrum of the seed crystal 25, approximately 500 nm to 800 nm was observed, in which the peak of emission and intensity from the vicinity of the band edge (near 364 nm) of gallium nitride was at 625 nm (600 nm to 650 nm). Moreover, the broad light emission from 500 nm to 800 nm was stronger than the light emission from the vicinity of the band edge.

  On the other hand, in the photoluminescence of the crystal 27 grown around the seed crystal 25, strong light emission (near 364 nm) from the vicinity of the band edge of gallium nitride was observed, but no broad light emission from 500 nm to 800 nm was observed. .

Example 13 <Growth Example 4 of Seed Crystal>
In this example, the crystal growth process of the seed crystal 25 was performed using the crystal growth apparatus 2 shown in FIG. FIG. 15 is a schematic diagram (cross-sectional view) showing a configuration example of the crystal growth apparatus 2 used in Example 13. In the crystal growth apparatus 2 of the present embodiment, an internal pressure vessel 51 is installed in a stainless steel external pressure vessel 50, and a reaction vessel 52 is further accommodated in the internal pressure vessel 51, forming a double structure. doing.

  A heater 53 for heating the mixed melt 24 in the reaction vessel 52 is installed in the external pressure vessel 50. The internal pressure vessel 51 has a closed shape made of stainless steel and can be detached from the external pressure vessel 50. The internal pressure vessel 51 is provided with a reaction vessel 52 for holding the mixed melt 24 containing metallic sodium and gallium and performing crystal growth.

  In this example, a reaction vessel 52 made of YAG having an inner diameter of 92 mm and a depth of 60 mm was used. The material of the reaction vessel 52 is not particularly limited, and BN sintered bodies, nitrides such as P-BN, oxides such as alumina and YAG, carbides such as SiC, and the like can be used.

  Hereinafter, a method of growing a GaN crystal using the crystal growth apparatus 2 will be described. First, the internal pressure vessel 51 is removed at the valve 61 and separated from the crystal growth apparatus 2 and placed in a glove box in an Ar atmosphere.

  Next, the seed crystal 25 was placed in the reaction vessel 52. In this example, a needle crystal having a width of 500 μm and a length of about 20 mm was used as the seed crystal 25. The seed crystal 25 was held by inserting a 4 mm deep hole in the bottom of the reaction vessel 52.

  Next, metallic sodium (Na) was heated to be liquid and placed in the reaction vessel 52. After sodium solidified, gallium was added. In this example, the molar ratio of gallium to sodium was 0.3: 0.7.

  Thereafter, the reaction vessel 52 was placed in the internal pressure vessel 51 in a high purity Ar gas atmosphere in the glove box. Then, the valve 61 was closed to seal the internal pressure vessel 51 filled with Ar gas, and the inside of the reaction vessel 52 was shut off from the external atmosphere.

  Next, the internal pressure vessel 51 was taken out of the glove box and incorporated in the crystal growth apparatus 2. That is, the internal pressure vessel 51 was installed at a predetermined position of the external pressure vessel 50 and connected to the gas supply pipe 54 at the valve 61 portion. By attaching the internal pressure resistant container 51 to the external pressure resistant container 50, the inside of the external pressure resistant container 50 is shut off from the external atmosphere.

  Next, evacuation and nitrogen introduction in the piping between the valve 61 and the valve 63 and in the external pressure vessel 50 were repeated 10 times through the valve 62. The valve 63 is closed in advance. Thereafter, the valve 62 is closed, the valve 61, the valve 63, and the valve 58 are opened, Ar gas is introduced from the gas supply pipe 60 for adjusting the total pressure, and the pressure is adjusted by the pressure control device 59 so that the inside and outside of the external pressure vessel 50 The valve 58 was closed by setting the total pressure in the pressure vessel 51 to 1.5 MPa.

  Then, nitrogen gas was introduced from the nitrogen supply pipe 57, the pressure was adjusted by the pressure controller 56, the valve 55 was opened, and the total pressure in the external pressure vessel 50 and the internal pressure vessel 51 was set to 3.4 MPa. That is, the partial pressure of nitrogen in the internal space 67 of the external pressure vessel 50 and the internal space 68 of the internal pressure vessel 51 is 1.9 MPa. Thereafter, the valve 55 was closed and the pressure control device 56 was set to 8 MPa.

  Next, the heater 53 was energized to raise the temperature of the reaction vessel 52 to the crystal growth temperature. The crystal growth temperature was 900 ° C. Since the total pressure in the external pressure vessel 50 and the internal pressure vessel 51 at 900 ° C. was measured by the pressure gauge 64 as 8 MPa, the nitrogen partial pressure in the external pressure vessel 50 and the internal pressure vessel 51 at 900 ° C. was 4.47 MPa. It becomes.

  Then, the valve 55 was opened, the nitrogen gas pressure was set to 8 MPa, and in this state, the reaction vessel 52 was held for 2000 hours to grow the GaN crystal 27. By applying a nitrogen gas pressure of 8 MPa, nitrogen consumed by crystal growth is supplied, and the nitrogen partial pressure can always be kept constant.

  As a result, the crystal 27 grows in the reaction vessel 52 so that the crystal diameter d of the seed crystal 25 increases in the direction perpendicular to the c-axis, and a GaN crystal 81 having a larger crystal diameter d (see FIG. 6) is crystallized. It was growing up. The crystal diameter d of the GaN crystal 81 was 60 mm, and the length was about 35 mm including the portion of the seed crystal 25 inserted into the reaction vessel 52. As shown in FIG. 6, the upper surface of the GaN crystal 81 is a c-plane with irregularities formed, an m-plane is formed on the side surface, and the c-plane and the m-plane are connected to the upper outer periphery of the GaN crystal 81 A gentle inclined surface was formed. In addition, the seed crystal 25 was included substantially at the center of the GaN crystal 81.

(Example 14) <Production example of crystal substrate>
In this example, a step of cutting out the GaN crystal 81 manufactured in Example 13 was performed to manufacture the crystal substrate 100a. That is, the GaN single crystal 81 (see FIG. 6) was externally ground and sliced parallel to the c-plane as indicated by P1 in FIG. 7-2. Thereafter, surface polishing and other surface treatments were performed to manufacture a GaN crystal substrate 100a (see FIG. 8-1) having a c-plane of φ2 inches and a thickness of 400 μm as a main surface.

The substrate main surface (c surface) was etched with an acidic solution (mixed acid of phosphoric acid and sulfuric acid, 230 ° C.), and the density of etch pits was evaluated to be 10 ² cm ⁻² . Compared to a GaN crystal in which an aluminum nitride needle crystal was grown by a conventional crystal manufacturing method, the dislocation was much less and the quality was high.

  Next, the photoluminescence of the crystal substrate 100a was measured at room temperature. A He—Cd laser having a wavelength of 325 nm was used as the excitation light source. In the photoluminescence spectrum of the seed crystal 25, light emission from the vicinity of the band edge of gallium nitride (near 364 nm) and light emission from about 500 nm to 800 nm with an intensity peak at 625 nm (600 nm to 650 nm) were observed. Moreover, the broad light emission from 500 nm to 800 nm was stronger than the light emission from the vicinity of the band edge.

  On the other hand, with respect to the photoluminescence of the GaN crystal 27 grown around the seed crystal 25, strong light emission from the vicinity of the band edge of gallium nitride (near 364 nm) is observed, and no broad light emission from 500 nm to 800 nm is observed. It was.

(Example 15) <Example of crystal production using HVPE method and example of production of crystal substrate>
In the present example, a GaN layer 28 is epitaxially grown on the GaN crystal substrate 100a (see FIG. 8-1) manufactured in Example 14 by performing a layer growth process by the HVPE method, and shown in FIG. 11-1. A GaN crystal 90 like this was manufactured. Further, a GaN crystal substrate 101 (see FIG. 11-2) was manufactured from the GaN crystal 90.

  Here, with reference to FIG. 16, the laminated growth process by HVPE method is demonstrated. FIG. 16 is a schematic diagram (cross-sectional view) showing a configuration example of the crystal growth apparatus 3 used in this example. As shown in FIG. 16, various gases can be introduced into the reaction vessel in the crystal growth apparatus 3, and a heater 30 for heating the inside of the apparatus is installed on the outer periphery of the reaction vessel.

  In the crystal growth by the HVPE method of this example, hydrogen was used as a carrier gas. Then, the gallium chloride gas generated by reacting gallium 40 and hydrogen chloride gas at 900 ° C. is transported onto the GaN crystal substrate 100 (100a) heated to 1100 ° C. and reacted with ammonia gas. GaN 28 was grown on (100a) to obtain a GaN crystal 90 (see FIG. 11-1).

  Thereafter, after processing the outer diameter of the manufactured GaN crystal 90, substrate processing such as polishing and surface treatment is performed to manufacture a GaN crystal substrate 101 (101a) having a diameter of 2 inches (see FIGS. 11-2 and 14-1). did.

(Example 16) <Example of crystal production using flux method and example of production of crystal substrate>
In this example, a layer growth process by a flux method is performed, and a GaN crystal 28 is grown by 10 mm on the GaN crystal substrate 100 (100a) manufactured in Example 14, as shown in FIG. A GaN crystal 90 was produced. From the GaN crystal 90, a GaN crystal substrate 101 (101a) (see FIGS. 11-2 and 14-1) and GaN crystal substrates 28b1 to 28b6 (see FIG. 11-3) were manufactured.

  Here, with reference to FIG. 17, the lamination growth process by the flux method will be described. FIG. 17 is a schematic diagram (cross-sectional view) showing a configuration example of the crystal growth apparatus 2 used in this example. Since the crystal growth apparatus 2 of the present embodiment is the same as that described in FIG.

  In this example, the molar ratio of gallium and sodium charged into the reaction vessel 52 was 0.25: 0.75. The crystal growth temperature was 880 ° C., the nitrogen partial pressure was 4 MPa (total pressure 8 MPa), and the crystal growth time was 1000 hours. (It should be noted that the total pressure in the internal spaces 67 and 68 at room temperature before the temperature rise was 3.6 MPa, the nitrogen partial pressure was 1.8 MPa, and the Ar partial pressure was 1.8 MPa.)

  As a result, the GaN crystal 28 having the c-plane as the main surface was grown on the GaN 100, and a GaN crystal 90 as shown in FIG. 11-1 was obtained. The thickness of the GaN crystal 28 was 10 mm, and the diameter thereof was slightly larger than the diameter (φ2 inches) of the GaN crystal substrate 100 (100a).

  Next, the outer diameter of the GaN crystal 90 was processed, and as shown in FIG. 11B, the GaN crystal substrate 101 and the GaN crystal 28b grown on the GaN crystal substrate 100 were separated by slicing parallel to the c-plane. . The GaN crystal 28b was further sliced as shown in FIG. 11-3 to obtain GaN crystal substrates 28b1 to 28b6 having a diameter of about 2 inches. Each crystal substrate after slicing was subjected to processing such as polishing and surface treatment.

  As described above, in this example, the large-area GaN crystal substrates 101 and 28b1 to 28b6 having a diameter of about 2 inches could be manufactured, and many GaN crystal substrates could be manufactured from the high-quality GaN crystal 90. .

1, 2, 3 Crystal growth apparatus 11 Pressure vessel 12, 52 Reaction vessel 13, 30, 53 Heater 14, 54, 65, 66 Gas supply pipe 15, 18, 21, 55, 58, 61, 62, 63 Valve 16, 19, 56, 59 Pressure control device 17, 57 Nitrogen supply pipe 20, 60 Dilution gas supply pipe 22, 64 Pressure gauge 23 Internal space of pressure vessel 24 Mixed melt 25 Needle crystal (seed crystal)
26 Installation table 27, 28, 80, 81, 82, 83, 90, 91, 92 Group 13 nitride crystal (GaN crystal)
40 Gallium 50 External pressure vessel 51 Internal pressure vessel 67 Internal space of external pressure vessel 68 Internal space of internal pressure vessel 100, 101 Group 13 nitride crystal substrate (GaN crystal substrate)

JP 2008-94704 A JP 2006-045047 A

Claims (20)

  The cross-sectional shape perpendicular to the c-axis is hexagonal, the c-axis length L is 9 mm or more, the crystal diameter d of the cross-section perpendicular to the c-axis is 100 μm or more, the c-axis length L, A gallium nitride crystal, wherein the ratio L / d of the crystal diameter d in a cross section perpendicular to the c-axis is 7 or more, and six side surfaces parallel to the c-axis are m-planes. The gallium nitride crystal according to claim 1,
The oxygen concentration in the crystal is 2 × 10 ¹⁷ cm ⁻³ or less, the carbon concentration is 3 × 10 ¹⁵ cm ⁻³ or less, the hydrogen concentration is 3 × 10 ¹⁶ cm ⁻³ or less, and the sodium concentration is 4 ×. A gallium nitride crystal characterized by being 10 ¹³ cm ⁻³ or less. The gallium nitride crystal according to claim 1,
A gallium nitride crystal, wherein boron in the crystal is in a range of 2 × 10 ¹⁸ cm ⁻² to 2 × 10 ¹⁹ cm ⁻² . A gallium nitride crystal according to any one of claims 1 to 3,
The emission spectrum of the gallium nitride crystal at room temperature by excitation with an electron beam or ultraviolet light has emission in a wavelength region of 500 nm to 800 nm, the peak of the emission intensity is in a wavelength region of 600 nm to 650 nm, and the 600 nm A gallium nitride crystal characterized in that the peak intensity of light emission in the wavelength region from 650 nm to 650 nm is larger than the peak intensity of light emission from the vicinity of the band edge of gallium nitride.   A group 13 nitride crystal comprising at least a part of the gallium nitride crystal according to claim 4 inside. The group 13 nitride crystal according to claim 5,
A group 13 nitride crystal characterized in that optical characteristics of a crystal region other than the gallium nitride crystal are uniform. The group 13 nitride crystal according to claim 6,
The emission spectrum of the gallium nitride crystal at room temperature by excitation with an electron beam or ultraviolet light has emission in a wavelength region of 500 nm to 800 nm, the peak of the emission intensity is in a wavelength region of 600 nm to 650 nm, and the 600 nm To 650 nm, and the peak intensity of light emission in the wavelength region of 650 nm is larger than the peak intensity of light emission from the vicinity of the band edge of gallium nitride,
In the group 13 nitride crystal other than the gallium nitride crystal, the emission intensity peak is not observed in the wavelength region of 600 nm to 650 nm, and the intensity of emission from near the band edge of the group 13 nitride crystal is not observed. Is a group 13 nitride crystal characterized by the strongest.   A substrate obtained by processing the group 13 nitride crystal according to any one of claims 5 to 7, wherein the substrate includes at least a part of the gallium nitride crystal according to claim 4. A group 13 nitride crystal substrate. The group 13 nitride crystal substrate according to claim 8,
The emission spectrum of the gallium nitride crystal at room temperature by excitation with an electron beam or ultraviolet light has emission in a wavelength region of 500 nm to 800 nm, the peak of the emission intensity is in a wavelength region of 600 nm to 650 nm, and the 600 nm To 650 nm, and the peak intensity of light emission in the wavelength region of 650 nm is larger than the peak intensity of light emission from the vicinity of the band edge of gallium nitride,
In the group 13 nitride crystal other than the gallium nitride crystal, the emission intensity peak is not observed in the wavelength region of 600 nm to 650 nm, and the intensity of emission from near the band edge of the group 13 nitride crystal is not observed. Group 13 nitride crystal substrate characterized in that is the strongest. The group 13 nitride crystal substrate according to claim 8 or 9,
The main surface is the {0001} plane, the {10-10} plane, the {11-20} plane, the {10-11} plane, the {20-21} plane, or the {11-22} plane. A group 13 nitride crystal substrate characterized by the above. The group 13 nitride crystal substrate according to claim 10,
A group 13 nitride crystal substrate characterized in that the main surface is a c-plane and the density of etch pits is on the order of 10 ² cm ⁻² .   A group 13 nitride crystal, wherein the group 13 nitride crystal is laminated on at least one main surface of the group 13 nitride crystal substrate according to any one of claims 8 to 11 by a vapor phase growth method. The group 13 nitride crystal according to claim 12,
The group 13 nitride crystal, wherein the vapor phase growth method is an HVPE method.   13. A group 13 nitride crystal comprising: stacking a group 13 nitride crystal on at least one main surface of the group 13 nitride crystal substrate according to claim 8 by vapor phase epitaxy. Manufacturing method. A method for producing a group 13 nitride crystal according to claim 14 ,
13. The method for producing a group 13 nitride crystal, wherein the vapor phase growth method is an HVPE method.   A method for producing a group 13 nitride crystal substrate, comprising: processing a group 13 nitride crystal according to claim 12 or 13 to produce a group 13 nitride crystal substrate. A group 13 nitride crystal according to any one of claims 5 to 7, or 12 or 13,
The group 13 nitride crystal, wherein the group 13 nitride is gallium nitride. The group 13 nitride crystal substrate according to any one of claims 8 to 11,
The group 13 nitride crystal substrate, wherein the group 13 nitride is gallium nitride. A method for producing a group 13 nitride crystal according to claim 14 or 15 ,
13. The method for producing a group 13 nitride crystal, wherein the group 13 nitride is gallium nitride. A method for producing a group 13 nitride crystal substrate according to claim 16 ,
13. The method for producing a group 13 nitride crystal substrate, wherein the group 13 nitride is gallium nitride.