JP6102116B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a method for manufacturing a light-emitting device that can be used for a display device, a lighting fixture, a display, a backlight source of a liquid crystal display, and the like.

  In recent years, various electronic components have been proposed and put into practical use, and the performance required for them has been increased. In particular, the performance required in the general lighting field, the in-vehicle field, and the like is increasing day by day, and further higher output, higher brightness, and higher reliability are required. Further, there is a demand for a point light source that satisfies these characteristics and has good compatibility with the optical system.

  In order to realize further higher output of such a light emitting device, for example, Patent Document 1 discloses a method of applying a reflecting member to the surface of a substrate on which a light emitting element is mounted. However, this method involves application of powder, or application of a mixture of powder and resin, so that a problem remains in formability.

  On the other hand, for example, Patent Document 2 discloses a method in which the surface of a conductive member on which a light emitting element is mounted is covered with a reflecting member by an electrodeposition method or electrostatic coating. However, in this method, since a part of the side surface of the light emitting element is covered with the conductive member, light cannot be directly extracted from the covered side surface portion.

JP 2009-212134 A International Publication No. 2011-099384

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a light emitting device that can efficiently extract light from a light emitting element to the outside.

In order to achieve the above object, a method for manufacturing a light emitting device according to the present invention includes:
[1] preparing a base having a first conductive member and a second conductive member insulated from the first conductive member on the surface;
[2] placing the light emitting element on the first conductive member;
[3] arranging the substrate in a medium;
[4] A step of depositing a reflective member on the second conductive member by applying a voltage to the second conductive member without applying a voltage to the first conductive member;
It is characterized by having.

  The first conductive member has a pattern of positive and negative pairs, and the light emitting element has a semiconductor layer and a positive electrode and a negative electrode disposed on a surface of the semiconductor layer, The positive electrode and the negative electrode of the light emitting element are preferably flip-chip mounted on a positive / negative pair pattern via a bonding member.

  Furthermore, it is preferable that the second conductive member is provided around the first conductive member.

  According to the method for manufacturing a light emitting device according to the present invention, it is possible to efficiently cover a desired portion of the light emitting device with the reflecting member, and light from the light emitting element can be efficiently extracted to the outside.

It is (a) top view for demonstrating the manufacturing method of the light-emitting device which concerns on embodiment of this invention, (b) It is a schematic sectional drawing of a B-B 'line | wire. It is (a) top view for demonstrating the manufacturing method of the light-emitting device concerning embodiment of this invention, (b) It is a schematic sectional drawing of the C-C 'line. It is a schematic sectional drawing which shows the light-emitting device manufactured with the manufacturing method of the light-emitting device which concerns on embodiment of this invention. (A) Top view which shows the other modification of the light-emitting device manufactured by the manufacturing method of the light-emitting device concerning embodiment of this invention, (b) Schematic sectional drawing of DD 'line, (c) EE' It is a schematic sectional drawing of a line.

  A mode for carrying out the present invention will be described below with reference to the drawings. However, the modes described below exemplify a method for forming a light emitting device for embodying the technical idea of the present invention, and the present invention does not limit the method for forming the light emitting device to the following.

  Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, and are merely explanations. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

  1 and 2 are a plan view and a schematic cross-sectional view showing a manufacturing process of the light emitting device according to this embodiment.

The manufacturing method of the light emitting device according to this embodiment is as follows:
[1] preparing a base body 10 having first conductive members 20b and 20c on the surface and a second conductive member 20a insulated from the first conductive member;
[2] a step of flip-chip mounting the light emitting element 30 on the first conductive members 20b and 20c, and [3] a step of placing the base 10 in a medium;
[4] A step of applying a voltage to the second conductive member 20a without applying a voltage to the first conductive members 20b and 20c, and depositing the voltage on the second conductive member 20a;
It is characterized by having.
The “medium” in the present invention refers to a gas or liquid that is in a state where the charged reflecting member can move by receiving electrostatic force.

  Hereinafter, each process of the manufacturing method of the light-emitting device which concerns on embodiment of this invention is explained in full detail.

[1] Step of Preparing the Base 10 The base 10 is a member on which the light emitting element 30 is mounted. Although it is a planar shape in FIG. 1 and FIG. 2, a recessed part etc. which are called a cavity can also be provided. In addition, although demonstrated using one light-emitting device here, until it divides | segments at the last process, the base | substrate 10 becomes an aggregate | assembly, and it is set as each light-emitting device by dividing | segmenting. Thereby, it becomes possible to deposit a reflecting member on a several base | substrate collectively.

As a material of the substrate 10, an insulating material is preferable, and a material that does not easily transmit light emitted from the light emitting element 30 or light from the outside is preferable. Moreover, what has a certain amount of intensity | strength is preferable. More specifically, resins such as ceramics (Al ₂ O ₃ , AlN, etc.), phenol resin, epoxy resin, polyimide resin, BT resin, polyphthalamide (PPA), and the like can be given. In the case of using the resin material of the base body 10, and a glass _fiber, an inorganic filler such as _{SiO 2, TiO 2, Al 2} O 3 were mixed in a resin, the improvement of mechanical strength, reduction in thermal expansion coefficient, light It is also possible to improve the reflectance.

  The first conductive members 20 b and 20 c formed on the surface of the base body 10 are members for electrically connecting the outside and the light emitting element and supplying a current (electric power) from the outside to the light emitting element 30. That is, it plays a role as an electrode for energizing from the outside or a part thereof. In the present embodiment, the first conductive members 20 b and 20 c have positive and negative electrode patterns, and these positive and negative electrode patterns are provided separately on the base 10. This separated portion is referred to as “groove G”. Similarly, the second conductive member 20a formed on the surface of the substrate 10 is provided away from the first conductive members 20b and 20c, is a conductive member formed around the light emitting element, and is a reflective member. It is a member for covering. This separated portion is referred to as “groove A”. The groove A is preferably as narrow as possible because the base 10 having a low reflectance is exposed and leads to a reduction in light extraction efficiency. Specifically, about 30-200 micrometers is mentioned.

  In the present embodiment, the second conductive member 20a is insulated from the first conductive members 20b and 20c and is provided around the first conductive member. The positive and negative electrode patterns of the first conductive members 20b and 20c are formed so as to be directly below the light emitting element to be mounted later. Furthermore, the width of the groove A is provided as narrow as possible, and the second conductive member 20a is provided around the electrode patterns of the first conductive members 20b and 20c. That is, as shown in FIG. 1A, the first conductive members 20b and 20c are surrounded by the second conductive member. According to such a configuration, the reflecting member 40 can be evenly deposited around the light emitting element 30 by the subsequent light emitting element placing step and reflecting member depositing step, so that light from the light emitting element can be efficiently extracted. It becomes possible.

  The conductive members 20a, 20b, and 20c can be appropriately selected from those known in the art depending on the material used for the substrate 10. For example, when ceramic is used as the material of the substrate 10, it is preferable to use a material having a high melting point that can withstand the firing temperature of the ceramic sheet, such as tungsten or molybdenum.

  Furthermore, a metal film may be formed on it as a single layer or multiple layers. For example, silver, copper, gold, aluminum, rhodium or the like may be used alone or in an alloy. Preferably, gold having excellent thermal conductivity is used alone. The film thickness of the metal film is preferably about 0.05 μm to 50 μm. In the case of a multilayer film, the thickness of the entire layer is preferably within this range.

  In the present embodiment, the second conductive member 20a is covered with the reflecting member 40 in a later step. Therefore, a decrease in light extraction efficiency can be suppressed without using a material having excellent reflectivity.

[2] Light-Emitting Element Mounting Step In the present embodiment, the light-emitting element 30 is a semiconductor light-emitting element having a positive electrode and a negative electrode disposed on the surface of the semiconductor layer, and is joined to the first conductive members 20b and 20c. Flip chip mounted through. By flip-chip mounting the light emitting element, the first conductive members 20b and 20c can be formed into a positive / negative pair pattern, and the mounting area of the light emitting element can be reduced. In addition, no wire is required for electrode connection, light absorption by the wire is prevented, and emitted light can be extracted efficiently.

  The number of light emitting elements 30 is not particularly limited, and a plurality of light emitting elements 30 may be used. When a light-emitting device using a plurality of light-emitting elements is to be used as a point light source, it is preferable to arrange the light sources (light-emitting elements) so as to be concentrated in one place as close as possible. Further, when a light emitting device using a plurality of light emitting elements is desired to be a planar light source, the distance between adjacent light emitting elements is appropriately separated so that light can be extracted evenly.

  The bonding member 60 is for electrically connecting the light emitting element 30 and the first conductive members 20b and 20c, and is a member for bonding the light emitting element 30 to the base 10. A conductive material is used for the joining member 60. Specific materials include conductive pastes such as Au, Ag, and Pd, Au-containing alloys, Ag-containing alloys, Pd-containing alloys, In-containing alloys, Pb-Pd-containing alloys, Au-Ga-containing alloys, Au-Sn. Examples thereof include alloys containing alloys, alloys containing Sn, alloys containing Au—Ge, alloys containing Au—Si, alloys containing Al, alloys containing Cu—In, and mixtures of metals and fluxes. Further, the joining member 60 can be in the form of liquid, paste, or solid (sheet, block, or powder), and can be appropriately selected depending on the composition, the shape of the substrate 10, and the like. Moreover, these joining members 60 may be formed with a single member, or several types may be combined.

In the present embodiment, it is preferable to use a light emitting diode as the light emitting element 30, and a light emitting element of any wavelength can be selected. For example, when using a blue (light having a wavelength of 430 nm to 490 nm) or green (light having a wavelength of 490 nm to 570 nm) light emitting element, ZnSe, nitride semiconductor (In _X Al _Y GaN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) and GaP can be used.

  For example, when the light-emitting element is used with face-up mounting, a first conductive member for mounting the light-emitting element is provided on the base 10 and connected to the first conductive members 20b and 20c using wires. Can be made. At this time, the joining member 60 does not need to be a conductive material, and a resin such as epoxy or silicone can be selected.

[3] Step of placing the substrate in the medium The substrate 10 is placed in the medium. The substrate 10 disposed in the medium suffices to have at least the first conductive member and the second conductive member, but in this embodiment, the light emitting element is mounted on the first conductive member. The substrate 10 is immersed in the electrolytic solution. Note that the second conductive member is electrically connected to an external electrode. As the medium, a mixed liquid in which a reflecting member is dispersed is used as an electrolytic solution for electrodeposition. The electrolyte is not particularly limited as long as the reflecting member charged therein can be electrophoresed. For example, an acid or an alkali for dissolving the reflecting member in the electrolytic solution, for example, nitric acid containing an alkaline earth metal ion (Mg ²⁺ ) or the like can be contained.

  Moreover, you may contain a metal alkoxide in electrolyte solution. Specifically, it is an organometallic material containing an element selected from Al, Sn, Si, Ti, Y, Pb or an alkaline earth metal as a constituent element. In addition, as a material contained in the electrolytic solution, a mixed solution in which a reflecting member is dispersed in a sol obtained by mixing a metal alcoholate or a metal alkoxide and an organic solvent in a predetermined ratio is used as the electrolytic solution. You can also. In addition, the electrolytic solution can be a mixed solution in which acetone is used as an organic solvent and alumina sol and a reflecting member are used as an organic metal material in a solution containing isopropyl alcohol as a mother liquid.

[4] Reflecting member coating step The reflecting member is formed by an electrodeposition method or an electrostatic coating method. By using these methods, the reflective member can be efficiently efficiently applied only to the second conductive member 20a without covering the light emitting element 30 and the first conductive member 20b, 20c with the reflective member 40. 40 can be deposited.

  Here, a method of selectively depositing the reflecting member 40 on the conductive member by an electrodeposition method will be described. A voltage having a polarity different from the charging of the reflecting member 40 is applied to the second conductive member 20a, and the reflecting member 40 is deposited on the second conductive member 20a by electrophoresis. At this time, no voltage is applied to the first conductive members 20b and 20c. Since the first conductive members 20b and 20c are insulated from the second conductive member 20a, the first conductive members 20b and 20c are not affected even when a voltage is applied to the second conductive member 20a. The reflective member is not selectively deposited. Here, the thickness of the reflecting member 40 deposited can be appropriately adjusted depending on the deposition conditions and time, but is preferably at least 10 μm or more in order to improve the light extraction efficiency.

In the present embodiment, the reflecting member 40 is preferably a white filler, and mainly preferably an inorganic compound. The term “white” as used herein includes the case where the filler itself is transparent, but also appears white due to scattering when there is a difference in refractive index from the material around the filler. _{Specifically, SiO 2, Al 2 O 3} , TiO 2, ZrO 2, ZnO 2, Nb 2 O 5, MgO, SrO, In 2 O 3, TaO 2, HfO, SeO, oxidation, such as Y 2 _{O 3} And nitrides such as SiN, AlN, and AlON, and fluorides such as MgF ₂ , and preferably include one or more of these materials. These may be used alone or in combination. Or you may laminate. It is preferable to use a filler having a particle size in the range of about 1 nm to 10 μm. More preferably, it is about 100 nm to 5 μm. Thereby, light can be scattered favorably. Further, the shape of the filler may be spherical or scaly.

  As shown in FIG. 2, the reflecting member 40 is formed on the surface of the second conductive member 20 a formed on the surface of the base 10. It is not formed on the first conductive members 20b and 20c. Further, it is not formed in the grooves A and G. Since the bases with low reflectivity are exposed in the grooves A and G, if the width of the grooves A and G is wide, it is expected to cause a reduction in efficiency. In order to suppress this, the width of the groove portions A and G is preferably 200 μm or less. When the widths of the groove portions A and G are 200 μm or less, the reflecting member 40, particularly the filler, easily covers the groove portions. More preferably, it is 100 μm or less. Most preferably, the groove A is completely covered with the reflecting member and does not adhere to the upper surface and the side surface of the light emitting element. Although it does not limit about a minimum, from a viewpoint of preventing contact between conductive members, 30 micrometers or more are preferred.

  In the present embodiment, the light emitting element 30 is flip-chip mounted so as to straddle the first conductive members 20b and 20c. The first conductive members 20b and 20c are formed so as to be directly below the light emitting element, and the periphery thereof is surrounded by the second conductive member. Here, when the reflecting member 40 is deposited on the second conductive member 20a by the electrodeposition method, the reflecting member 40 deposited on the second conductive member 20a covers even the side surface of the second conductive member 20a. . According to such a configuration, light from the side surface of the light emitting element 30 is reflected by the reflecting member, and light extraction efficiency from the side surface of the light emitting element can be improved.

  For example, in the case where a part of the first conductive member is used as the external electrode, a mask or the like is formed on the portion to be the external electrode, and the mask or the like is removed after the reflective member is formed. A part of the first conductive member can be exposed.

  The manufacturing method of the light emitting device of this embodiment can further include the following steps.

(Translucent member coating process)
After the reflection member coating step, the surface of the reflection member 40 that covers the surfaces of the light emitting element 30 and the second conductive member 20a can be covered with a translucent member. The translucent member is a member that protects the light emitting element 30 and the reflective member 40 mounted on the base 10 from dust, moisture, external force, and the like. Examples of the material of the translucent member include silicone resin, epoxy resin, urea resin, fluorine resin, modified silicone resin, modified epoxy resin, and glass. In addition to such materials, colorants, light diffusing materials, fillers, and the like can be included as desired. Since the translucent member has a high refractive index, the amount of light extracted from the light emitting element 30 can be increased. One type of translucent member may be formed as a single layer, a single layer in which two or more types of members are mixed, or two or more single layers may be laminated. The translucent member may have a lens function. For example, the surface of the translucent member may be raised to form a convex lens.

  As a method for forming the translucent member, it may be formed by a known method used when molding a light emitting element in the field, such as a potting method in which a resin is dropped and cured, compression molding, injection molding, printing, or the like. it can.

  Moreover, in the manufacturing method of the light-emitting device of this embodiment, the translucent member can contain a wavelength conversion member. The wavelength conversion member is a member that emits a different wavelength by absorbing at least a part of light from the light emitting element. For example, specifically, phosphors, fluorescent pigments, fluorescent dyes, and the like are applicable. As the wavelength conversion member, one that converts light from the light emitting element into a longer wavelength is more efficient. The wavelength conversion member-containing translucent member may be formed of a single layer as a single layer, or may be formed as a single layer in which two or more members are mixed, or two or more single layers may be laminated. Also good. Moreover, you may laminate | stack two or more layers of the said translucent member and a wavelength conversion member containing translucent member.

As the phosphor, for example, a nitride phosphor or an oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce can be used. More specifically, it is preferable that it is at least any one selected from the groups described in the following (1) to (3).
(1) Alkaline earth halogen apatite, alkaline earth metal borate, alkaline earth metal aluminate, alkaline earth metal mainly activated by lanthanoids such as Eu and transition metal elements such as Mn Phosphors such as sulfide, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, etc. (2) Rare earth aluminates, rare earth silicates, alkalis mainly activated by lanthanoid elements such as Ce Phosphors such as earth metal rare earth silicates (3) Among phosphors such as organic or organic complexes mainly activated by lanthanoid elements such as Eu, lanthanoid elements such as Ce in (2) are mainly used A YAG (Yttrium Aluminum Garnet) -based phosphor that is a rare earth aluminate phosphor that is activated by the above method is preferable. The YAG phosphor is represented by the following composition formulas such as (21) to (24).
(21) Y ₃ Al ₅ O ₁₂ : Ce
_{(22) (Y 0.8 Gd 0.2} ) 3 Al 5 O 12: Ce
_{(23) Y 3 (Al 0.8} Ga 0.2) 5 O 12: Ce
(24) (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce
For example, part or all of Y may be substituted with Tb, Lu, or the like. _{Specifically, Tb 3 Al 5 O 12:} Ce, Lu 3 Al 5 O 12: may be Ce or the like. Furthermore, phosphors other than the above-described phosphors and having the same performance, action, and effect can be used. Although the particle size of the phosphor is not limited to obtaining, it is preferably about 0.2 to 30 μm.

  Note that in the case where a part of the first conductive member is covered with a mask or the like for later forming an external electrode, the translucent member is externally removed by removing the mask or the like after the formation of the translucent member. This is preferable because it does not cover the electrode.

(Protective element placement process)
In the method for manufacturing the light emitting device of the present embodiment, a step of providing a protective element may be provided as necessary. The protective element plays a role of, for example, a Zener diode. It is preferable that the protective element is placed before the reflecting member covering step, and the protective element and the first conductive member are electrically connected. Further, a wire may be used when connecting the protective element and the conductive member.

(Other processes)
Furthermore, in the method for manufacturing a light emitting device of the present invention, steps other than the steps described above may be included between or before and after each step within a range that does not affect each step. For example, other processes such as a substrate cleaning process for cleaning the substrate, an unnecessary object removing process for removing unnecessary substances such as dust, and a mounting position adjusting process for adjusting the mounting position of the light emitting element and the protective element may be included. Good.

Example 1
Embodiments of a light emitting device using the manufacturing method of the present invention will be described with reference to the drawings. As shown in FIG. 3, the light emitting device 100 is mounted on the base 10 having the second conductive member 20a and the first conductive members 20b, 20c, and 20d on the surface, and the first conductive members 20b and 20c. A light emitting element 30 that is electrically connected; a wavelength conversion member-containing translucent member 90 that covers the light emitting element 30; and a translucent member 50 that covers the surface of the second conductive member 20a. Become.

  In the light emitting device 100 shown in FIG. 3, a second conductive member 20 a for covering the reflecting member and first conductive members 20 b and 20 c forming positive and negative electrode patterns are formed on the surface of the flat substrate 10. Is formed. The first conductive members 20b and 20c are formed so as to be directly below the light emitting element, and the second conductive member 20a is provided around the first conductive members 20b and 20c. The portions of the first conductive members 20 b and 20 c located in the vicinity of both end portions of the base body 10 are external electrodes 20 d and are exposed from the reflecting member 40. The electrodes of the light emitting element 30 are flip-chip mounted on the first conductive members 20b and 20c via the bonding member 60, and the reflection member 40 continuously covers the surface of the second conductive member 20a.

  Moreover, the translucent member 50 is provided in the convex lens shape so that the light emitting element 30 and the wavelength conversion member containing translucent member 90 which coat | covers it may be covered. The translucent member 50 is formed on the wavelength conversion member-containing translucent member 90 and the reflection member 40 on the light emitting element 30. Since the surface of the translucent member 50 serves as a light extraction surface, it is preferable that all surfaces other than the surface facing the light emitting element 30 among the surfaces on the substrate 10 side are covered with the reflecting member 40. With such a configuration, since the lower surface of the translucent member 50 is covered with the wavelength conversion member having substantially the same size as the light emitting element 30 and the reflection member 40, the light extraction efficiency is high. A high-quality point light source can be formed.

(Example 2)
As a modification of the light-emitting device using the manufacturing method of the present invention, a light-emitting device 200 is shown in FIG. The light emitting device 200 includes a concave portion for accommodating the light emitting element 30 as the base 11, and the first conductive members 20b and 20c forming a positive and negative pair pattern are exposed on the bottom surface of the concave portion, and the bonding member is interposed therebetween. The light emitting element 30 is mounted. Further, a second conductive member 20a for covering the reflective member is formed around the first conductive members 20b and 20c on which the light emitting element is placed. Further, the protective element 5 is connected to the conductive member 20f for protecting element conduction through the joining member 60, and is connected in reverse parallel to the light emitting element by the wire 8. The protective element conduction conductive member 20f is electrically connected to the first conductive members 20b and 20c. Since the protective element conductive member 20f is not conductive with the second conductive member 20a, the reflection member 40 is not covered on the surface. An external electrode 20 d that is electrically connected to the first conductive members 20 b and 20 c is provided on the back side of the base 11. A second conductive member 20a is formed as a reflector on the inner side surface of the base 11, and is configured so that light from the light emitting element 30 does not pass outside. The second conductive member 20a disposed inside the side surface of the base body 11 can be coated with the reflecting member 40 by electrodeposition or electrostatic coating.

  If the second conductive member 20a disposed on the inner side surface of the base 11 is provided up to the upper surface of the recess, the reflecting member 40 may protrude from the outer surface (upper surface) of the recess. For this reason. As shown in FIGS. 4 (a) and 4 (b). A step is formed on the side surface of the recess, and the second conductive member 20a is not formed on the side surface of the step. Thereby, it can suppress that the reflection member 40 protrudes to the outer side (upper surface) of a recessed part. Other configurations are substantially the same as those of the above-described embodiment.

  The light emitting device manufacturing method according to the present invention is used for manufacturing various light emitting devices such as an illumination light source, various indicator light sources, an in-vehicle light source, a display light source, a liquid crystal backlight light source, a sensor light source, and a traffic light. can do.

5 Protection Element 8 Wire 10, 11 Base 20a Second Conductive Member (Reflecting Member Covering Conductive Member)
20b, 20c First conductive member (conductive member for mounting light emitting element)
20d External electrode 20f Protective element conducting conductive member 30 Light emitting element 40 Reflecting member 50 Translucent member 60 Joining member 90 Wavelength converting member-containing translucent member 100, 200 Light emitting device A, G Groove

Claims (4)

A first conductive member on the surface;
The width between the second conductive member insulated from the first conductive member and provided around the first conductive member, and the width between the first conductive member and the second conductive member is 30 to 200 μm. Providing a substrate having a groove, and
In order to prevent the light emitting element and the second conductive member from being electrically connected , the first conductive member is only directly below the light emitting element on the surface side of the base on which the light emitting element is placed. a step of mounting the light emitting element to the first conductive member,
Placing the substrate in a medium;
By not applying a voltage to the first conductive member, the reflective member is not covered with the light emitting element, and by applying a voltage to the second conductive member, the reflective member becomes the second conductive member. And depositing in the groove ,
A method for manufacturing a light-emitting device, comprising: The first conductive member has a pattern of positive and negative pairs,
The light emitting element includes a semiconductor layer, and a positive electrode and a negative electrode disposed on a surface of the semiconductor layer,
The positive electrode and the negative electrode of the light emitting element are flip-chip mounted on a positive / negative pair pattern of the first conductive member via a bonding member,
The manufacturing method of the light-emitting device of Claim 1. The reflective member includes SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , ZnO ₂ , Nb ₂ O ₅ , MgO, SrO, In ₂ O ₃ , TaO ₂ , HfO, SeO, Y ₂ O ₃ , SiN, AlN, the method of manufacturing the light emitting device according to claim 1 or 2 comprising one or more selected from the group consisting of AlON and MgF _2. In the step of mounting the light emitting element, the first conductive member is formed such that only right below the light emitting device, method for manufacturing the light emitting device according to any one of claims 1 to 3 .

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