JP4766200B2 - Adhesive composition and method for manufacturing semiconductor device - Google Patents

Adhesive composition and method for manufacturing semiconductor device Download PDF

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Publication number
JP4766200B2
JP4766200B2 JP2011046921A JP2011046921A JP4766200B2 JP 4766200 B2 JP4766200 B2 JP 4766200B2 JP 2011046921 A JP2011046921 A JP 2011046921A JP 2011046921 A JP2011046921 A JP 2011046921A JP 4766200 B2 JP4766200 B2 JP 4766200B2
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Japan
Prior art keywords
adhesive
component
parts
semiconductor wafer
mass
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Expired - Fee Related
Application number
JP2011046921A
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Japanese (ja)
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JP2011146731A (en
Inventor
恵介 大久保
朗 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2011046921A priority Critical patent/JP4766200B2/en
Publication of JP2011146731A publication Critical patent/JP2011146731A/en
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Publication of JP4766200B2 publication Critical patent/JP4766200B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Description

本発明は、接着剤組成物、それを用いた回路部材接続用接着剤シート及び半導体装置の製造方法に関する。   The present invention relates to an adhesive composition, an adhesive sheet for connecting circuit members using the same, and a method for manufacturing a semiconductor device.

一般に、半導体チップの実装技術として、半導体チップを直接回路基板に接続するフェイスダウンボンディング方式が知られている。この方式には、半導体チップの電極部分にはんだバンプを形成して回路基板の電極にはんだ接続する方法や、半導体チップに設けた突起電極に導電性接着剤を塗布して回路基板の電極との電気的な接続を行う方法がある。   In general, a face-down bonding method in which a semiconductor chip is directly connected to a circuit board is known as a semiconductor chip mounting technique. In this method, a solder bump is formed on the electrode part of the semiconductor chip and soldered to the electrode of the circuit board, or a conductive adhesive is applied to the protruding electrode provided on the semiconductor chip to connect with the electrode of the circuit board. There are ways to make electrical connections.

フェイスダウンボンディング方式で製造された半導体装置は、各種環境下に曝された場合、接続されたチップと基板の熱膨張係数差に基づくストレスが接続界面で発生するため、接続信頼性が低下しやすいという問題を有している。このため、接続界面のストレスを緩和する目的で、チップと基板の間隙をエポキシ樹脂等のアンダーフィル材で充填することが行われている。   When exposed to various environments, a semiconductor device manufactured by the face-down bonding method generates stress at the connection interface due to a difference in thermal expansion coefficient between the connected chip and the substrate, and thus connection reliability is likely to decrease. Has the problem. For this reason, in order to alleviate the stress at the connection interface, the gap between the chip and the substrate is filled with an underfill material such as an epoxy resin.

アンダーフィル材の充填方式としては、チップと基板とを接続した後に低粘度の液状樹脂を注入する方式と、基板上にアンダーフィル材を設けた後にチップを搭載する方式がある。更に、後者の方式には、液状樹脂を塗布する方式とフィルム状樹脂を貼付ける方式がある。   The underfill material filling method includes a method of injecting a low-viscosity liquid resin after connecting the chip and the substrate, and a method of mounting the chip after providing the underfill material on the substrate. Furthermore, the latter method includes a method of applying a liquid resin and a method of attaching a film-like resin.

液状樹脂を用いる方式は、ディスペンサーによる精密な塗布量コントロールが困難である。特に、近年の薄型化されたチップを実装する場合、塗布量が多すぎると、ボンディング時に滲み出した樹脂がチップの側面を這い上がり、ボンディングツールを汚染してしまう。そのため、本方式では、ツールの洗浄が必要となり、量産時の工程が煩雑化する。   In the method using a liquid resin, it is difficult to precisely control the coating amount with a dispenser. In particular, when mounting a thin chip in recent years, if the amount applied is too large, the resin that has oozed out during bonding crawls up the side surface of the chip and contaminates the bonding tool. Therefore, in this method, the tool needs to be cleaned, and the process during mass production becomes complicated.

他方、フィルム状樹脂を用いる方式は、フィルムの厚みを調整することによって最適な樹脂量を与えることが容易にできる反面、仮圧着工程と呼ばれるフィルム状樹脂を基板に貼付ける工程を必要とする。通常、仮圧着工程は、対象となるチップ幅よりも大きめの幅にスリットされたリール状の接着剤テープを用意し、チップサイズに応じて基材上の接着剤テープをカットして接着剤が反応しない程度の温度で基板上に熱圧着する。ところが、チップ搭載位置にフィルムを精度よく供給することは難しく、また微小チップなどに対応した細幅のリール加工は困難であることから、一般的に、歩留りの確保には、仮圧着で貼付けるフィルムをチップサイズより大きくすることで対応している。そのため、本方式では、隣接部品との距離や実装面積を余分に確保する必要があり、高密度化実装に対応しにくい。   On the other hand, the method using a film-like resin can easily give an optimum amount of resin by adjusting the thickness of the film, but requires a step of attaching a film-like resin called a temporary pressure bonding step to a substrate. Usually, in the pre-bonding process, a reel-shaped adhesive tape that is slit to a width larger than the target chip width is prepared, and the adhesive tape on the base material is cut according to the chip size. Thermocompression bonding is performed on the substrate at a temperature that does not react. However, since it is difficult to accurately supply the film to the chip mounting position and it is difficult to process a narrow reel corresponding to a microchip, it is generally pasted by provisional pressure bonding to secure the yield. This can be done by making the film larger than the chip size. For this reason, in this method, it is necessary to secure an extra distance from adjacent components and a mounting area, and it is difficult to support high-density mounting.

最近、高密度化実装技術の一つとして、フィルム状接着剤付チップを用いる方法が検討されている。例えば、下記特許文献１及び２などには、フィルム状の接着剤が貼付されたウエハを準備し、このウエハの裏面を研削した後、ウエハを接着剤と共に切断してチップ化することにより、チップにチップサイズと同サイズの接着剤が付着したフィルム状接着剤付チップを作製し、これを回路基板に実装して半導体装置を製造する方法が提案されている。   Recently, a method using a chip with a film adhesive has been studied as one of high-density mounting techniques. For example, in Patent Documents 1 and 2 below, a wafer is prepared by preparing a wafer to which a film-like adhesive is attached, grinding the back surface of the wafer, and then cutting the wafer together with the adhesive into chips. There has been proposed a method of manufacturing a semiconductor device by manufacturing a chip with a film adhesive to which an adhesive having the same size as the chip size is attached and mounting the chip on a circuit board.

特開２００６−０４９４８２号公報JP 2006-049482 A 特許第２８３３１１１号明細書Japanese Patent No. 2833111

上記の方法におけるフィルム状接着剤は、ウエハへの貼付工程、ウエハ裏面研削工程、ダイシング工程、フリップチップボンディング工程を経ることになる。ウエハへの貼付工程では、ウエハに貼付したときに剥離やボイドの発生を十分抑制できる貼付性がフィルム状接着剤に求められる。ウエハ裏面研削工程では、ウエハ裏面研削性に優れていること、すなわち、研削による破損やクラックの発生を十分防止できる粘着性や密着性を有していることがフィルム状接着剤に求められる。フリップチップボンディング工程では、半導体素子搭載用部材などの回路部材との接続時にボイドが発生しにくい埋込性がフィルム状接着剤に求められる。   The film adhesive in the above method goes through a wafer sticking step, a wafer back grinding step, a dicing step, and a flip chip bonding step. In the step of sticking to a wafer, the film adhesive is required to have stickability that can sufficiently suppress the occurrence of peeling and voids when sticking to a wafer. In the wafer back surface grinding step, the film adhesive is required to have excellent wafer back surface grindability, that is, to have adhesiveness and adhesiveness that can sufficiently prevent the occurrence of breakage and cracks due to grinding. In the flip-chip bonding process, the film adhesive is required to have a embeddability in which voids are unlikely to occur when connected to a circuit member such as a semiconductor element mounting member.

しかしながら、上記特許文献１に記載のウエハ加工用テープの接着剤層は、フィルム自体が柔らかすぎるため高温圧着時にボイドが出やすく、埋込不足により信頼性に悪影響を及ぼす可能性があった。上記特許文献２に記載の接着剤フィルムは、フリップチップボンディング工程における埋込性が必ずしも十分とはいえず、特に、ハンダ接合を同時に行う場合の２００℃以上での熱圧着時にボイドが発生することがあった。   However, since the adhesive layer of the wafer processing tape described in Patent Document 1 is too soft, voids are likely to occur during high-temperature pressure bonding, and reliability may be adversely affected due to insufficient embedding. The adhesive film described in Patent Document 2 does not necessarily have sufficient embeddability in the flip chip bonding process, and in particular, voids are generated at the time of thermocompression bonding at 200 ° C. or higher when performing solder bonding simultaneously. was there.

本発明は、上記事情に鑑みてなされたものであり、半導体ウエハへの貼付性、ウエハ裏面研削性及びフリップチップボンディング時の埋込性のすべてを高水準で満足するフィルム状接着剤の形成を可能とする接着剤組成物、それを用いた回路部材接続用接着剤シート、及び半導体装置の製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and it is possible to form a film-like adhesive satisfying all of the stickability to a semiconductor wafer, wafer back surface grindability, and embedding at the time of flip chip bonding. It is an object of the present invention to provide a possible adhesive composition, an adhesive sheet for connecting circuit members using the same, and a method for manufacturing a semiconductor device.

上記課題を解決する本発明の接着剤組成物は、（Ａ）重量平均分子量が２万以上１０万以下の熱可塑性樹脂と、（Ｂ）エポキシ樹脂と、（Ｃ）放射線重合性化合物と、（Ｄ）光開始剤と、（Ｅ）マイクロカプセル型の硬化促進剤とを含む。   The adhesive composition of the present invention that solves the above problems includes (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000, (B) an epoxy resin, (C) a radiation polymerizable compound, ( D) a photoinitiator and (E) a microcapsule type curing accelerator.

本発明の接着剤組成物によれば、上記構成を有することにより、半導体ウエハへの貼付性、ウエハ裏面研削性及びフリップチップボンディング時の埋込性のすべてを高水準で満足するフィルム状接着剤を形成することができる。   According to the adhesive composition of the present invention, having the above-described configuration, the film-like adhesive satisfying all of the adhesiveness to the semiconductor wafer, the wafer back surface grindability, and the embedding property at the time of flip chip bonding. Can be formed.

本発明の接着剤組成物により上記の効果が得られる理由を本発明者らは以下のとおり考えている。すなわち、上記（Ａ）〜（Ｅ）成分を組み合わせることによって、ウエハへの貼付工程で求められる比較的低温での埋込性及びウエハ裏面研削工程で求められる粘着性や密着性を有するフィルムを形成しつつ、上記エポキシ樹脂及びマイクロカプセル型の硬化促進剤の配合により速硬化性が得られること、及び放射線重合性化合物及び光開始剤の配合によりフリップチップボンディング前の放射線照射により加熱時の流動性を制御できることで、ボンディング時における良好な埋込性が達成されたと本発明者らは考えている。   The present inventors consider the reason why the above effect can be obtained by the adhesive composition of the present invention as follows. That is, by combining the above components (A) to (E), a film having adhesiveness and adhesion required in a relatively low temperature embedding required in the wafer attaching process and wafer back grinding process is formed. However, fast curability can be obtained by blending the epoxy resin and the microcapsule type curing accelerator, and fluidity during heating by radiation irradiation before flip chip bonding by blending the radiation polymerizable compound and the photoinitiator. The present inventors consider that good embedding at the time of bonding has been achieved by controlling the above.

本発明の接着剤組成物は、（Ａ）成分を１００質量部と、（Ｂ）成分を５〜５００質量部と、（Ｃ）成分を５〜２００質量部と、（Ｄ）成分を０．１〜３０質量部と、（Ｅ）成分を５０〜３００質量部とを含むものであることが好ましい。   The adhesive composition of the present invention comprises 100 parts by weight of component (A), 5 to 500 parts by weight of component (B), 5 to 200 parts by weight of component (C), and 0. It is preferable that 1-30 mass parts and (E) component are included 50-300 mass parts.

また、本発明の接着剤組成物は、（Ｆ）１分子内にフェノール性水酸基を１つ有するメチロール化合物を更に含むことができる。このような化合物を配合することにより、埋込性を損なうことなく樹脂組成物にフラックス活性を付与することができる。係る接着剤組成物をハンダ接合される回路部材間に介在させた場合、ハンダ表面の酸化膜を除去するためのフラックス活性が十分に得られ、加熱加圧によってハンダ接合と接着剤の硬化とを同時に且つ良好に行うことが可能となる。   Moreover, the adhesive composition of this invention can further contain the methylol compound which has one phenolic hydroxyl group in (F) 1 molecule. By blending such a compound, flux activity can be imparted to the resin composition without impairing the embedding property. When such an adhesive composition is interposed between circuit members to be soldered, sufficient flux activity for removing the oxide film on the solder surface can be obtained. It becomes possible to carry out simultaneously and favorably.

本発明の接着剤組成物は、相対向する回路部材間に介在させ、回路部材同士を接着するために用いることができる。   The adhesive composition of the present invention can be used for adhering circuit members by interposing them between circuit members facing each other.

本発明の回路部材接続用接着剤シートは、支持基材と、該支持基材上に設けられ、上記本発明の接着剤組成物からなる接着剤層とを備えることを特徴とする。本発明の回路部材接続用接着剤シートは、接着剤層を、相対向する回路部材間に介在させ、回路部材同士を接着するために用いることができる。   The adhesive sheet for circuit member connection of this invention is equipped with a support base material and the adhesive bond layer which is provided on this support base material and consists of the adhesive composition of the said invention, It is characterized by the above-mentioned. The adhesive sheet for connecting circuit members of the present invention can be used for interposing an adhesive layer between opposing circuit members and bonding the circuit members together.

本発明はまた、主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの回路電極が設けられている側に、上記本発明の回路部材接続用接着剤シートの接着剤層を貼付ける工程と、半導体ウエハの回路電極が設けられている側とは反対側を研削して半導体ウエハを薄化する工程と、接着剤層に放射線を照射する工程と、薄化した半導体ウエハ及び放射線が照射された接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、フィルム状接着剤付半導体素子と半導体素子搭載用支持部材とをフィルム状接着剤付半導体素子のフィルム状接着剤を介して接着する工程とを備える半導体装置の製造方法を提供する。   The present invention also provides a semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces, and the adhesive of the adhesive sheet for connecting a circuit member of the present invention on the side of the semiconductor wafer on which the circuit electrodes are provided. A step of pasting a layer, a step of thinning the semiconductor wafer by grinding the side opposite to the side on which the circuit electrodes of the semiconductor wafer are provided, a step of irradiating the adhesive layer with radiation, and a thinned semiconductor The wafer and the adhesive layer irradiated with radiation are diced into a semiconductor element with a film adhesive, and the semiconductor element with the film adhesive and the semiconductor element mounting support member are attached with the film adhesive. There is provided a method of manufacturing a semiconductor device comprising a step of bonding via a film-like adhesive of a semiconductor element.

本発明によれば、半導体ウエハへの貼付性、ウエハ裏面研削性及びフリップチップボンディング時の埋込性のすべてを高水準で満足するフィルム状接着剤の形成を可能とする接着剤組成物、及びそれを用いた回路部材接続用接着剤シートを提供することができる。また、本発明によれば、上記の回路部材接続用接着剤シートを用いた半導体装置の製造方法を提供することができ、これにより接続信頼性に優れた半導体装置を提供することができる。   According to the present invention, an adhesive composition capable of forming a film-like adhesive satisfying at a high level all of adhesiveness to a semiconductor wafer, wafer back surface grindability, and embedding at the time of flip chip bonding, and The adhesive sheet for circuit member connection using the same can be provided. Moreover, according to this invention, the manufacturing method of the semiconductor device using said adhesive sheet for circuit member connection can be provided, and, thereby, the semiconductor device excellent in connection reliability can be provided.

本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention.

図１は、本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。図１に示す回路部材接続用接着剤シート１０は、支持基材３と、該支持基材３上に設けられ、本発明の接着剤組成物からなる接着剤層２と、接着剤層２を被覆する保護フィルム１とを備えている。   FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. An adhesive sheet 10 for connecting circuit members shown in FIG. 1 includes a support base 3, an adhesive layer 2 provided on the support base 3 and made of the adhesive composition of the present invention, and an adhesive layer 2. And a protective film 1 to be coated.

まず、接着剤層２を構成する本発明の接着剤組成物について説明する。   First, the adhesive composition of the present invention constituting the adhesive layer 2 will be described.

本発明の接着剤組成物は、（Ａ）重量平均分子量が２万以上１０万以下の熱可塑性樹脂と、（Ｂ）エポキシ樹脂と、（Ｃ）放射線重合性化合物と、（Ｄ）光開始剤と、（Ｅ）マイクロカプセル型の硬化促進剤とを含む。   The adhesive composition of the present invention comprises (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000, (B) an epoxy resin, (C) a radiation polymerizable compound, and (D) a photoinitiator. And (E) a microcapsule type curing accelerator.

（Ａ）重量平均分子量が２万以上１０万以下の熱可塑性樹脂は、例えば、接着剤組成物に塗膜性を付与するために使用される。具体例としては、例えば、ポリエステル、ポリウレタン、ポリビニルブチラール、ポリアリレート、ポリメチルメタクリレート、アクリルゴム、ポリスチレン、フェノキシ樹脂、ＮＢＲ、ＳＢＲ、ポリイミドやシリコーン変性樹脂（アクリルシリコーン、エポキシシリコーン、ポリイミドシリコーン）等の熱可塑性樹脂が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いることができる。上記の樹脂のうち、接着後の高信頼性が得られやすくなる高Ｔｇ化の観点から、フェノキシ樹脂が好ましい。フェノキシ樹脂としては、東都化成（株）製ＦＸ−２９３、ＹＰ−７０等を用いることができる。   (A) A thermoplastic resin having a weight average molecular weight of 20,000 or more and 100,000 or less is used, for example, for imparting coating properties to the adhesive composition. Specific examples include, for example, polyester, polyurethane, polyvinyl butyral, polyarylate, polymethyl methacrylate, acrylic rubber, polystyrene, phenoxy resin, NBR, SBR, polyimide, silicone-modified resin (acrylic silicone, epoxy silicone, polyimide silicone), and the like. A thermoplastic resin is mentioned. These can be used alone or in combination of two or more. Of the above resins, a phenoxy resin is preferable from the viewpoint of increasing the Tg which makes it easy to obtain high reliability after bonding. As the phenoxy resin, FX-293, YP-70, etc. manufactured by Tohto Kasei Co., Ltd. can be used.

また、（Ａ）成分は、耐リフロー性の点で、（Ｂ）エポキシ樹脂と非相溶であることが好ましい。ただし、相溶性については（Ａ）成分の特性のみでは決定されないので、（Ａ）成分及び（Ｂ）成分の両者が相溶しない組み合わせを選択する。   Moreover, it is preferable that (A) component is incompatible with (B) epoxy resin at the point of reflow resistance. However, since compatibility is not determined only by the characteristics of the component (A), a combination in which both the components (A) and (B) are not compatible is selected.

（Ａ）成分の重量平均分子量は２万以上１０万以下であるが、３万以上９．５万以下であることが好ましく、４万以上９万以下であることがより好ましく、５万以上８万以下であることが特に好ましい。重量平均分子量がこの範囲にあると、シート状又はフィルム状とした接着剤層の強度、可とう性を良好にバランスさせることが容易となるとともに接着剤層のフロー性が良好となるため、配線の回路充填性（埋込性）を十分確保できる。なお、本明細書において、重量平均分子量とは、表１に示す条件に従って、ゲル浸透クロマトグラフ（ＧＰＣ）より標準ポリスチレンによる検量線を用いて測定した値をいう。   The weight average molecular weight of the component (A) is from 20,000 to 100,000, preferably from 30,000 to 95,000, more preferably from 40,000 to 90,000, and more preferably from 50,000 to 8 It is particularly preferred that it is 10,000 or less. When the weight average molecular weight is within this range, it becomes easy to satisfactorily balance the strength and flexibility of the adhesive layer made into a sheet or film, and the flowability of the adhesive layer is improved. The circuit fillability (embeddability) can be sufficiently secured. In the present specification, the weight average molecular weight means a value measured from a gel permeation chromatograph (GPC) using a standard polystyrene calibration curve according to the conditions shown in Table 1.

Figure 0004766200
Figure 0004766200

（Ｂ）エポキシ樹脂としては、硬化して接着作用を有するものであれば特に限定されず、例えば、エポキシ樹脂ハンドブック（新保正樹編、日刊工業新聞社）等に記載されるエポキシ樹脂を広く使用することができる。具体的には、例えば、ビスフェノールＡ型エポキシなどの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂、トリスフェノールメタン型エポキシ樹脂などを使用することができる。また、多官能エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環含有エポキシ樹脂又は脂環式エポキシ樹脂など、一般に知られているものを適用することができる。   (B) The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. For example, epoxy resins described in an epoxy resin handbook (Shinho Masaki, edited by Nikkan Kogyo Shimbun) are widely used. be able to. Specifically, for example, a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, a trisphenolmethane type epoxy resin, or the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

ビスフェノールＡ型エポキシ樹脂としては、ジャパンエポキシレジン（株）製エピコート８０７，８１５，８２５，８２７，８２８，８３４，１００１，１００４，１００７，１００９、ダウケミカル社製ＤＥＲ−３３０，３０１，３６１、東都化成（株）製ＹＤ８１２５，ＹＤＦ８１７０等が挙げられる。フェノールノボラック型エポキシ樹脂としては、ジャパンエポキシレジン（株）製エピコート１５２，１５４、日本化薬（株）製ＥＰＰＮ−２０１、ダウケミカル社製ＤＥＮ−４３８等が、また、ｏ−クレゾールノボラック型エポキシ樹脂としては、日本化薬（株）製ＥＯＣＮ−１０２Ｓ，１０３Ｓ，１０４Ｓ，１０１２，１０２５，１０２７、東都化成（株）製ＹＤＣＮ７０１，７０２，７０３，７０４等が挙げられる。多官能エポキシ樹脂としては、ジャパンエポキシレジン（株）製Ｅｐｏｎ１０３１Ｓ、１０３２−Ｈ６０、チバスペシャリティーケミカルズ（株）製アラルダイト０１６３、ナガセケムテックス（株）製デナコールＥＸ−６１１，６１４，６１４Ｂ，６２２，５１２，５２１，４２１，４１１，３２１等が挙げられる。アミン型エポキシ樹脂としては、ジャパンエポキシレジン（株）製エピコート６０４、東都化成（株）製ＹＨ−４３４、三菱ガス化学（株）製ＴＥＴＲＡＤ−Ｘ，ＴＥＴＲＡＤ−Ｃ、住友化学（株）製ＥＬＭ−１２０等が挙げられる。複素環含有エポキシ樹脂としては、チバスペシャリティーケミカルズ（株）製アラルダイトＰＴ８１０等の、ＵＣＣ社製ＥＲＬ４２３４，４２９９，４２２１，４２０６等が挙げられる。これらのエポキシ樹脂は、単独で又は２種類以上を組み合わせて使用することができる。   As the bisphenol A type epoxy resin, Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007, 1009 manufactured by Japan Epoxy Resin Co., Ltd., DER-330, 301, 361 manufactured by Dow Chemical Co., Ltd. Examples thereof include YD8125, YDF8170, and the like. Examples of the phenol novolac type epoxy resin include Epicoat 152,154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and o-cresol novolac type epoxy resin. Examples include EOCN-102S, 103S, 104S, 1012, 1025, 1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, 702, 703, 704 manufactured by Toto Kasei Co., Ltd., and the like. As polyfunctional epoxy resins, Japan Epoxy Resins Co., Ltd. Epon 1031S, 1032-H60, Ciba Specialty Chemicals Co., Ltd. Araldite 0163, Nagase ChemteX Co., Ltd. Denacol EX-611, 614, 614B, 622, 512 , 521, 421, 411, 321 and the like. As amine type epoxy resins, Japan Epoxy Resin Co., Ltd. Epicoat 604, Tohto Kasei Co., Ltd. YH-434, Mitsubishi Gas Chemical Co., Ltd. TETRAD-X, TETRAD-C, Sumitomo Chemical Co., Ltd. ELM- 120 etc. are mentioned. Examples of the heterocyclic ring-containing epoxy resin include ERL4234, 4299, 4221, 4206 manufactured by UCC, such as Araldite PT810 manufactured by Ciba Specialty Chemicals. These epoxy resins can be used alone or in combination of two or more.

本発明においては、高接着力を付与する観点から、ビスフェノールＡ型エポキシ樹脂及びフェノールノボラック型エポキシ樹脂を用いることが好ましい。   In the present invention, it is preferable to use a bisphenol A type epoxy resin and a phenol novolac type epoxy resin from the viewpoint of imparting high adhesive strength.

本発明に係る接着剤組成物における（Ｂ）成分の含有量は、（Ａ）成分１００質量部に対して５〜５００質量部であることが好ましく、５０〜５００質量部であることがより好ましく、７５〜４００質量部とすることがさらにより好ましく、１００〜３００質量部とすることが特に好ましい。（Ｂ）成分の含有量が上記の範囲にあると、フィルム状に形成した接着剤層の弾性率及び成型時のフロー性抑制が十分確保でき、高温での取り扱い性を良好にできる。   The content of the component (B) in the adhesive composition according to the present invention is preferably 5 to 500 parts by mass and more preferably 50 to 500 parts by mass with respect to 100 parts by mass of the component (A). 75 to 400 parts by mass is even more preferable, and 100 to 300 parts by mass is particularly preferable. When content of (B) component exists in said range, the elasticity modulus of the adhesive bond layer formed in the film form and the flow property suppression at the time of shaping | molding can fully be ensured, and the handleability in high temperature can be made favorable.

（Ｃ）放射線重合性化合物としては、放射線の照射により架橋し得る化合物が挙げられる。具体的には、ペンタエリスリトールトリアクリレート、ジペンタエリスリトールヘキサアクリレート、ジペンタエリスリトールペンタアクリレート、トリメチロールプロパントリアクリレート、イソシアヌル酸ＥＯ変性トリアクリレート、ジトリメチロールプロパンテトラアクリレート、ペンタエリスリトールテトラアクリレート、ジシクロペンテニルオキシエチルアクリレート、２，２−ビス〔４−（メタクリロキシ・ジエトキシ）フェニル〕プロパンなどのアクリレート又はメタクリレートが挙げられる。これらの化合物は、単独で又は２種類以上を組み合わせて使用することができる。また、新中村化学株式会社製：Ａ−ＤＰＨ、日立化成工業株式会社製：ＦＡ−５１２ＡＳ、ＦＡ−５１３ＡＳ等の市販品を用いることができる。   (C) Examples of the radiation polymerizable compound include compounds that can be cross-linked by irradiation with radiation. Specifically, pentaerythritol triacrylate, dipentaerythritol hexaacrylate, dipentaerythritol pentaacrylate, trimethylolpropane triacrylate, isocyanuric acid EO-modified triacrylate, ditrimethylolpropane tetraacrylate, pentaerythritol tetraacrylate, dicyclopentenyloxy Examples thereof include acrylates or methacrylates such as ethyl acrylate and 2,2-bis [4- (methacryloxydiethoxy) phenyl] propane. These compounds can be used alone or in combination of two or more. Moreover, commercially available products such as Shin-Nakamura Chemical Co., Ltd .: A-DPH, Hitachi Chemical Co., Ltd .: FA-512AS, FA-513AS can be used.

本発明に係る接着剤組成物における（Ｃ）成分の含有量は、（Ａ）成分１００質量部に対して、５〜２００質量部が好ましい。係る含有量が５質量部以上であると、紫外線などの放射線照射による放射線重合性化合物の重合反応を十分に進めることができ、高温圧着時の流動性を抑制することができる。一方、配合量が２００質量部を超えると、架橋が起こりすぎ、圧着に必要な流動性が得られにくくなるので好ましくない。これらの点を考慮すると、上記配合量は、１０〜１５０質量部がより好ましく、２０〜１００質量部が特に好ましい。   As for content of (C) component in the adhesive composition which concerns on this invention, 5-200 mass parts is preferable with respect to 100 mass parts of (A) component. When the content is 5 parts by mass or more, the polymerization reaction of the radiation-polymerizable compound by irradiation with radiation such as ultraviolet rays can be sufficiently advanced, and the fluidity during high-temperature pressure bonding can be suppressed. On the other hand, if the blending amount exceeds 200 parts by mass, cross-linking occurs excessively, and it becomes difficult to obtain the fluidity necessary for pressure bonding. Considering these points, the blending amount is more preferably 10 to 150 parts by mass, and particularly preferably 20 to 100 parts by mass.

（Ｄ）光開始剤としては、放射線の照射により上記（Ｃ）成分を硬化させ得る化合物が挙げられる。（Ｄ）成分の具体例としては、例えば、４，４’−ジエチルアミノベンゾフェノン、４，４’−ジメチルアミノベンゾフェノン等のベンゾフェノン類、１−ヒドロキシ−シクロヘキシルフェニルケトン、２−メチル−１[４−(メチルチオ)フェニル]−２−モリフォリノプロパン−１−オン、２−ベンジル−２−ジメチルアミノ−１−(４−モルフォリノフェニル)−ブタノン−１等のケトン類、及びビス（２，４，６−トリメチルベンゾイル）−フェニルフォスフィンオキサイドが挙げられる。中でも、溶媒への溶解性や熱時の安定性から、チバスペシャリティーケミカルズ（株）社製Ｉｒｇ−１８４、Ｉｒｇ−８１９が好ましい。また、光開始剤は、１種類を単独で、又は２種類以上を組み合わせて用いることができる。   (D) As a photoinitiator, the compound which can harden the said (C) component by irradiation of a radiation is mentioned. Specific examples of the component (D) include, for example, benzophenones such as 4,4′-diethylaminobenzophenone and 4,4′-dimethylaminobenzophenone, 1-hydroxy-cyclohexyl phenyl ketone, 2-methyl-1 [4- ( Ketones such as methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, and bis (2,4,4) 6-trimethylbenzoyl) -phenylphosphine oxide. Among these, Irg-184 and Irg-819 manufactured by Ciba Specialty Chemicals Co., Ltd. are preferable from the viewpoint of solubility in a solvent and stability during heating. Moreover, a photoinitiator can be used individually by 1 type or in combination of 2 or more types.

本発明に係る接着剤組成物における（Ｄ）成分の含有量は、（Ａ）成分１００質量部に対して０．１〜３０質量部であることが好ましい。係る含有量が０．１質量部より小さいと、未反応の（Ｄ）成分が残存しやすくなる。この場合、高温圧着時にボイドが多くなり、埋込性に悪影響を与える傾向にある。一方、上記含有量が３０質量部を超えると、重合反応によって分子量を十分に増加させることが困難となり、低分子量成分が多く存在する傾向にある。この場合、低分子量成分が熱時の流動性に影響を及ぼす可能性がある。これらの点を考慮すると、上記含有量は、０．５〜２５質量部がより好ましく、１〜２０質量部が特に好ましい。   It is preferable that content of (D) component in the adhesive composition which concerns on this invention is 0.1-30 mass parts with respect to 100 mass parts of (A) component. If the content is less than 0.1 parts by mass, the unreacted component (D) tends to remain. In this case, voids increase at the time of high-temperature pressure bonding, and the embedding property tends to be adversely affected. On the other hand, when the content exceeds 30 parts by mass, it is difficult to sufficiently increase the molecular weight by the polymerization reaction, and there is a tendency that many low molecular weight components exist. In this case, the low molecular weight component may affect the fluidity during heating. Considering these points, the content is more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 20 parts by mass.

（Ｅ）マイクロカプセル型の硬化促進剤としては、ポリウレタン、ポリスチレン、ゼラチン及びポリイソシアネート等の高分子物質、ケイ酸カルシウム、ゼオライトなどの無機物、或いはニッケルや銅などの金属薄膜などの被膜により硬化促進剤からなる核が実質的に覆われているものが挙げられる。カプセルに内包される硬化促進剤としては、例えば、イミダゾール、テトラフェニルホスホニウムテトラフェニルボラートなどが挙げられる。これらのうち、保存安定性、速硬化性の点で、イミダゾールが好ましい。   (E) As a microcapsule type curing accelerator, curing is accelerated by a coating of a polymer material such as polyurethane, polystyrene, gelatin and polyisocyanate, an inorganic material such as calcium silicate and zeolite, or a metal thin film such as nickel or copper. The thing which the nucleus which consists of an agent is covered substantially is mentioned. Examples of the curing accelerator included in the capsule include imidazole and tetraphenylphosphonium tetraphenylborate. Of these, imidazole is preferred in terms of storage stability and fast curability.

マイクロカプセルの平均粒径は、フィルム形成性の観点から、１０μｍ以下が好ましく、５μｍ以下がより好ましい。また、粒径の下限値は、保存安定性をより確実に得る観点から、２μｍ以上であることが好ましい。   The average particle size of the microcapsules is preferably 10 μm or less, more preferably 5 μm or less, from the viewpoint of film formability. Moreover, it is preferable that the lower limit of a particle size is 2 micrometers or more from a viewpoint of acquiring storage stability more reliably.

（Ｅ）成分は市販品を用いることができ、例えば、旭化成ケミカルズ株式会社製ＨＰ−３９４１、ＨＰ−４０３２等が挙げられる。   (E) A commercial item can be used for a component, for example, Asahi Kasei Chemicals Corporation HP-3941, HP-4032, etc. are mentioned.

本発明に係る接着剤組成物における（Ｅ）成分の含有量は、（Ａ）成分１００質量部に対して５０〜３００質量部であることが好ましい。係る含有量が、５０質量部未満であると、硬化反応が進みにくくなる傾向にあり、３００質量部を超えると、マイクロカプセル型の硬化促進剤に含まれている液状成分の影響で、ボイドが発生しやすくなる傾向にある。これらの点を考慮すると、上記含有量は、７５〜２５０質量部がより好ましく、１００〜２００質量部がさらにより好ましい。   The content of the component (E) in the adhesive composition according to the present invention is preferably 50 to 300 parts by mass with respect to 100 parts by mass of the component (A). When the content is less than 50 parts by mass, the curing reaction tends to be difficult to proceed. When the content exceeds 300 parts by mass, voids are caused by the influence of the liquid component contained in the microcapsule type curing accelerator. It tends to occur easily. Considering these points, the content is more preferably 75 to 250 parts by mass, and still more preferably 100 to 200 parts by mass.

本発明に係る接着剤組成物は、（Ｆ）１分子内にフェノール水酸基を１つ有するメチロール化合物を更に含有することができる。このような化合物を配合することにより、埋込性を損なうことなく接着剤層２にフラックス活性を付与することができる。   The adhesive composition according to the present invention can further contain (F) a methylol compound having one phenol hydroxyl group in one molecule. By blending such a compound, flux activity can be imparted to the adhesive layer 2 without impairing the embedding property.

（Ｆ）１分子内にフェノール水酸基を１つ有するメチロール化合物としては、以下のフラックス活性試験においてハンダボールをほぼ１個に凝集させることができるものが好ましい。試験は、銅板状に３ｍｍφのハンダボールを１０個置き、そこにメチロール化合物を約２００ｍｇ載せ、２６０℃に温めたホットプレート上で加熱し、３０秒経過後のハンダボールの状態を観察する。   (F) As the methylol compound having one phenol hydroxyl group in one molecule, those capable of aggregating solder balls into almost one in the following flux activity test are preferable. In the test, 10 solder balls of 3 mmφ are placed on a copper plate, about 200 mg of a methylol compound is placed thereon, heated on a hot plate heated to 260 ° C., and the state of the solder balls after 30 seconds is observed.

また、（Ｆ）成分は、フィルム形成時には反応が抑制され活性が維持し、高温圧着時には活性を示した後に反応して系内に取り込まれるという設計の観点から、フェノール性水酸基の両隣にメチロール基が存在するメチロール化合物であることが好ましい。   In addition, the component (F) has a methylol group on both sides of the phenolic hydroxyl group from the viewpoint of the design that the reaction is suppressed and the activity is maintained at the time of film formation and the activity is exhibited after high temperature pressure bonding and then reacted and taken into the system. Is preferably a methylol compound.

更に、（Ｆ）成分は、下記一般式（１）で示されるメチロール化合物が好ましい。

Figure 0004766200

式（１）中、Ｘは、炭素数１〜１０のアルキル基を示し、炭素数が２以上でありメチレン基を有する場合、メチレン基の少なくとも一つが−Ｏ−、−ＮＨ−、−Ｓ−、−ＣＯ−、−ＯＣＯ−又は−ＣＯＯ−で置換されていてもよく、炭素数が３以上でありメチン基（−ＣＨ＜）を有する場合、メチン基の少なくとも一つが窒素原子で置換されていてもよい。 Furthermore, the component (F) is preferably a methylol compound represented by the following general formula (1).
Figure 0004766200
In formula (1), X represents an alkyl group having 1 to 10 carbon atoms, and when the carbon number is 2 or more and has a methylene group, at least one of the methylene groups is —O—, —NH—, —S—. , -CO-, -OCO- or -COO-, and when it has 3 or more carbon atoms and has a methine group (-CH <), at least one of the methine groups is substituted with a nitrogen atom May be.

また、フラックス活性や塗工溶媒への溶解性の観点から、上記一般式（１）におけるＸが、炭素数１〜１０の直鎖状若しくは分岐状のアルキル基であるメチロール化合物を用いることが好ましい。更に、塗工溶媒への溶解性の観点から、Ｘがメチル基などであるメチロール化合物を用いることが好ましい。具体的には、本州化学（株）製、商品名：ＤＭＬ−ＰＯＰ、ＤＭＬ−ＰＣ等が挙げられる。   From the viewpoint of flux activity and solubility in a coating solvent, it is preferable to use a methylol compound in which X in the general formula (1) is a linear or branched alkyl group having 1 to 10 carbon atoms. . Furthermore, from the viewpoint of solubility in a coating solvent, it is preferable to use a methylol compound in which X is a methyl group or the like. Specific examples include trade names: DML-POP and DML-PC manufactured by Honshu Chemical Co., Ltd.

本発明に係る接着剤組成物における（Ｆ）成分の含有量は、埋込性を十分維持しつつ良好なフラックス活性を得る観点から、接着剤組成物全量を基準として、２〜３０質量％であることが好ましい。係る含有量が、２質量％未満であると、十分なフラックス活性が発現されない可能性があり、一方、３０質量％を超えると、ボイドが発生しやすくなる傾向にある。   The content of the component (F) in the adhesive composition according to the present invention is 2 to 30% by mass on the basis of the total amount of the adhesive composition from the viewpoint of obtaining good flux activity while maintaining sufficient embeddability. Preferably there is. If the content is less than 2% by mass, sufficient flux activity may not be expressed. On the other hand, if it exceeds 30% by mass, voids tend to be generated.

本発明に係る接着剤組成物には、形成される接着剤層の取扱い性向上、熱伝導性向上、溶融粘度の調整及びチキソトロピック性付与などを目的として、無機フィラーを添加することができる。無機フィラーとしては、特に制限はなく、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、窒化ほう素、結晶性シリカ、非晶性シリカ等が挙げられる。これらのフィラーは単独で又は二種類以上を組み合わせて使用することができる。また、フィラーの形状は特に制限されない。   An inorganic filler can be added to the adhesive composition according to the present invention for the purpose of improving the handleability of the formed adhesive layer, improving thermal conductivity, adjusting the melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, Examples thereof include crystalline silica and amorphous silica. These fillers can be used alone or in combination of two or more. Further, the shape of the filler is not particularly limited.

上記のフィラーの中でも、熱伝導性向上のためには、酸化アルミニウム、窒化アルミニウム、窒化ほう素、結晶性シリカ、非晶性シリカ等が好ましい。また、溶融粘度の調整やチキソトロピック性の付与の目的には、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ、非晶性シリカなどが好ましい。また、フィルムの熱時流動性向上のためには、ナノフィラーを用いることがより好ましい。   Among the above fillers, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica and the like are preferable. Moreover, it is more preferable to use a nanofiller in order to improve the hot fluidity of the film.

無機フィラーの配合量は、接着剤組成物全量１００質量部に対して１〜１００質量部が好ましい。係る配合量が１質量部未満であると、添加効果が十分に得られない傾向があり、１００質量部を超えると、接着剤層の貯蔵弾性率の上昇、接着性の低下、ボイド残存による電気特性の低下等の問題が発生しやすくなる傾向がある。   As for the compounding quantity of an inorganic filler, 1-100 mass parts is preferable with respect to 100 mass parts of adhesive composition whole quantity. If the blending amount is less than 1 part by mass, the effect of addition tends not to be sufficiently obtained. If it exceeds 100 parts by mass, the storage elastic modulus of the adhesive layer is increased, the adhesiveness is lowered, and the electricity due to voids remains. There is a tendency that problems such as deterioration of characteristics tend to occur.

また、本発明に係る接着剤組成物には、異種材料間の界面結合を良くするために、各種カップリング剤を添加することができる。カップリング剤としては、例えば、シラン系、チタン系、アルミニウム系等が挙げられる。   In addition, various coupling agents can be added to the adhesive composition according to the present invention in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane, titanium, and aluminum.

上記シラン系カップリング剤としては、例えば、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルトリエトキシシラン、３−アミノプロピルメチルジエトキシシラン、３−ウレイドプロピルトリエトキシシラン、３−ウレイドプロピルトリメトキシシランなどが挙げられる。これらは、単独で又は二種類以上を組み合わせて使用することができる。また、日本ユニカー株式会社製Ａ−１８９、Ａ−１１６０などの市販品を用いることもできる。   Examples of the silane coupling agent include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and 3-aminopropylmethyl. Examples include diethoxysilane, 3-ureidopropyltriethoxysilane, and 3-ureidopropyltrimethoxysilane. These can be used alone or in combination of two or more. Commercial products such as A-189 and A-1160 manufactured by Nippon Unicar Co., Ltd. can also be used.

上記カップリング剤の配合量は、添加効果や耐熱性及びコストの面から、（Ａ）成分１００質量部に対して０．０１〜１０質量部とするのが好ましい。   It is preferable that the compounding quantity of the said coupling agent shall be 0.01-10 mass parts with respect to 100 mass parts of (A) component from the surface of an addition effect, heat resistance, and cost.

さらに、本発明に係る接着剤組成物には、イオン性不純物を吸着して、吸湿時の絶縁信頼性を向上させる目的で、イオン捕捉剤を更に添加することができる。このようなイオン捕捉剤としては、例えば、トリアジンチオール化合物、ビスフェノール系還元剤等の、銅がイオン化して溶け出すのを防止するため銅害防止剤として知られる化合物、ジルコニウム系、アンチモンビスマス系マグネシウムアルミニウム化合物等の無機イオン吸着剤などが挙げられる。   Furthermore, an ion scavenger can be further added to the adhesive composition according to the present invention for the purpose of adsorbing ionic impurities and improving insulation reliability during moisture absorption. Examples of such ion-trapping agents include triazine thiol compounds and bisphenol-based reducing agents, such as compounds known as copper damage inhibitors to prevent copper ionization and dissolution, zirconium-based, and antimony bismuth-based magnesium. Examples include inorganic ion adsorbents such as aluminum compounds.

上記イオン捕捉剤の配合量は、添加効果や耐熱性及びコスト等の点から、（Ａ）成分１００質量部に対して０．１〜１０質量部とするのが好ましい。   The blending amount of the ion scavenger is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoints of addition effect, heat resistance and cost.

また、本発明の効果を阻害しない範囲内で、上記接着剤組成物に導電粒子を含有させて異方導電性接着フィルム（ＡＣＦ）とすることができる。   Moreover, within the range which does not inhibit the effect of this invention, an electroconductive particle can be contained in the said adhesive composition, and it can be set as an anisotropic conductive adhesive film (ACF).

接着剤層２は、上述した本発明に係る接着剤組成物を溶媒に溶解若しくは分散してワニスとし、このワニスを支持基材３上に塗布し、加熱により溶媒を除去することによって形成することができる。或いは、上記ワニスを保護フィルム１上に塗布し、加熱により溶媒を除去することによって形成することができる。   The adhesive layer 2 is formed by dissolving or dispersing the above-described adhesive composition according to the present invention in a solvent to form a varnish, applying the varnish on the support substrate 3, and removing the solvent by heating. Can do. Or it can form by apply | coating the said varnish on the protective film 1, and removing a solvent by heating.

用いる溶媒は、特に限定されないが、接着剤層形成時の揮発性やワニス作製時の溶解性などを考慮して決めることが好ましい。具体的には、例えば、メタノール、エタノール、２−メトキシエタノール、２−エトキシエタノール、２−ブトキシエタノール、メチルエチルケトン、アセトン、メチルイソブチルケトン、トルエン、キシレン等の比較的低沸点の溶媒は接着剤層形成時に接着剤層の硬化が進みにくい点で好ましい。また、塗工性を向上させるなどの目的では、例えば、ジメチルアセトアミド、ジメチルホルムアミド、Ｎ−メチルピロリドン、シクロヘキサノンなどの比較的高沸点の溶媒を使用することが好ましい。これらの溶媒は、１種を単独で又は２種以上を組み合わせて使用することができる。   The solvent to be used is not particularly limited, but is preferably determined in consideration of volatility when forming the adhesive layer, solubility when preparing the varnish, and the like. Specifically, for example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene forms an adhesive layer. It is preferable in that the curing of the adhesive layer is difficult to proceed. In addition, for the purpose of improving the coatability, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone. These solvents can be used alone or in combination of two or more.

支持基材３としては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリエチレンテレフタレートなどのプラスチックフィルム等が挙げられる。市販のものとして、例えば、帝人デュポンフィルム株式会社製の「Ａ−３１」等のポリエチレンテレフタレートフィルム等が挙げられる。また、支持基材３は、上記の材料から選ばれる２種以上が混合されたもの、又は、上記のフィルムが複層化されたものでもよい。   Examples of the support substrate 3 include a plastic film such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, and polyethylene terephthalate. As a commercially available thing, polyethylene terephthalate films, such as "A-31" by Teijin DuPont Films, etc. are mentioned, for example. Further, the support base 3 may be a mixture of two or more selected from the above materials, or a multilayer of the above film.

支持基材３の厚みは、特に制限はないが、５〜２５０μｍが好ましい。厚みが５μｍより薄いと、半導体ウエハの研削（バックグラインド）時に支持基材が切れる可能性があり、２５０μｍより厚いと経済的でなくなるため好ましくない。   Although the thickness of the support base material 3 does not have a restriction | limiting in particular, 5-250 micrometers is preferable. If the thickness is less than 5 μm, the support substrate may be cut during grinding (back grinding) of the semiconductor wafer, and if it is more than 250 μm, it is not economical, which is not preferable.

支持基材３は、光透過性が高いことが好ましく、具体的には、５００〜８００ｎｍの波長域における最小光透過率が１０％以上であることが好ましい。   The support base material 3 preferably has high light transmittance. Specifically, the minimum light transmittance in a wavelength region of 500 to 800 nm is preferably 10% or more.

支持基材３としては、例えば、粘着剤層を支持基材上に設けたものを用いることができる。設ける粘着剤としては主モノマーとして２−エチルヘキシルアクリレートとメチルメタクリレートを用い、官能基モノマーとしてヒドロキシエチルアクリレートとアクリル酸を用い、溶液重合法によりアクリル共重合体を合成したものなどを使用することができる。   As the support base material 3, what provided the adhesive layer on the support base material can be used, for example. As the adhesive to be provided, 2-ethylhexyl acrylate and methyl methacrylate are used as main monomers, hydroxyethyl acrylate and acrylic acid are used as functional group monomers, and an acrylic copolymer synthesized by a solution polymerization method can be used. .

上記ワニスを支持基材上に塗布する方法としては、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等、一般に周知の方法が挙げられる。   Examples of a method for applying the varnish on the supporting substrate include generally known methods such as knife coating, roll coating, spray coating, gravure coating, bar coating, and curtain coating.

接着剤層２の厚みは、特に制限はないが、３〜２００μｍが好ましい。厚みが３μｍより小さいと、応力緩和効果が乏しくなる傾向があり、２００μｍより厚いと経済的でなくなる上に、半導体装置の小型化の要求に応えることが困難となる。   Although there is no restriction | limiting in particular in the thickness of the adhesive bond layer 2, 3-200 micrometers is preferable. If the thickness is smaller than 3 μm, the stress relaxation effect tends to be poor. If the thickness is larger than 200 μm, it is not economical and it becomes difficult to meet the demand for downsizing of the semiconductor device.

保護フィルム１としては、例えば、ポリエチレンテレフタレート等の耐熱性及び耐溶媒性を有する重合体フィルムを用いることができる。市販のものとして、例えば、帝人デュポンフィルム株式会社製の「Ａ−３１」等のポリエチレンテレフタレートフィルム等が挙げられる。保護フィルムは、厚みが１０〜１００μｍであることが好ましく、３０〜７５μｍであることがより好ましく、３５〜５０μｍであることが特に好ましい。この厚みが１０μｍ未満では塗工の際、保護フィルムが破れる傾向があり、１００μｍを超えると廉価性に劣る傾向がある。   As the protective film 1, for example, a polymer film having heat resistance and solvent resistance such as polyethylene terephthalate can be used. As a commercially available thing, polyethylene terephthalate films, such as "A-31" by Teijin DuPont Films, etc. are mentioned, for example. The thickness of the protective film is preferably 10 to 100 μm, more preferably 30 to 75 μm, and particularly preferably 35 to 50 μm. If the thickness is less than 10 μm, the protective film tends to be broken during coating, and if it exceeds 100 μm, the cost tends to be inferior.

上述した回路部材接続用接着剤シート１０は、相対向しハンダ接合される回路電極を有する回路部材と半導体素子との間又は半導体素子同士の間に介在させ、回路部材と半導体素子又は半導体素子同士を接着するために用いることができる。この場合、回路部材と半導体素子又は半導体素子同士を熱圧着することにより、ボイド発生を抑制しつつ十分な接着力で接着することができる。これにより、接続信頼性に優れた接続体を得ることができる。   The above-described adhesive sheet 10 for connecting a circuit member is interposed between a circuit member and a semiconductor element having circuit electrodes which are opposed to each other and solder-bonded, or between semiconductor elements, and the circuit member and the semiconductor elements or the semiconductor elements are interleaved. Can be used for bonding. In this case, the circuit member and the semiconductor element or the semiconductor elements can be bonded with a sufficient adhesive force while suppressing generation of voids by thermocompression bonding. Thereby, the connection body excellent in connection reliability can be obtained.

次に、回路部材接続用接着剤シート１０を用いて半導体装置を製造する方法について説明する。   Next, a method for manufacturing a semiconductor device using the adhesive sheet 10 for connecting circuit members will be described.

図２〜図６は、本発明に係る半導体装置の製造方法の好適な一実施形態を説明するための模式断面図である。本実施形態の半導体装置の製造方法は、
（ａ）主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの回路電極が設けられている側に、上述した本発明に係る回路部材接続用接着剤シートの接着剤層を貼付ける工程と、
（ｂ）半導体ウエハの回路電極が設けられている側とは反対側を研削して半導体ウエハを薄化する工程と、
（ｃ）接着剤層に放射線を照射する工程と、
（ｄ）薄化した半導体ウエハ及び放射線を照射した接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
（ｅ）フィルム状接着剤付半導体素子と半導体素子搭載用支持部材とをフィルム状接着剤付半導体素子のフィルム状接着剤を介して接着する工程と、
を備える。以下、図面を参照しながら、各工程について説明する。 2 to 6 are schematic cross-sectional views for explaining a preferred embodiment of a semiconductor device manufacturing method according to the present invention. The manufacturing method of the semiconductor device of this embodiment is as follows:
(A) A semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces is prepared, and the adhesive for the above-described adhesive sheet for connecting circuit members according to the present invention is provided on the side of the semiconductor wafer where the circuit electrodes are provided. A step of applying a layer;
(B) a step of grinding the opposite side of the semiconductor wafer to the side where the circuit electrodes are provided to thin the semiconductor wafer;
(C) irradiating the adhesive layer with radiation;
(D) a step of dicing the thinned semiconductor wafer and the adhesive layer irradiated with radiation into individual semiconductor elements with a film adhesive;
(E) a step of bonding the semiconductor element with a film adhesive and the semiconductor element mounting support member through the film adhesive of the semiconductor element with a film adhesive;
Is provided. Hereinafter, each process will be described with reference to the drawings.

（ａ）工程
先ず、接着剤シート１０を所定の装置に配置し、保護フィルム１を剥がす。続いて、主面の一方に複数の回路電極２０を有する半導体ウエハＡを準備し、半導体ウエハＡの回路電極が設けられている側に接着剤層２を貼付け、支持基材３／接着剤層２／半導体ウエハＡが積層された積層体を得る（図２を参照）。回路電極２０には、ハンダ接合用のハンダバンプを設けてもよい。また、回路電極２０にハンダバンプを設けず、半導体素子搭載用支持部材の回路電極にハンダバンプを設けることもできる。 (A) Process First, the adhesive sheet 10 is arrange | positioned to a predetermined apparatus, and the protective film 1 is peeled off. Subsequently, a semiconductor wafer A having a plurality of circuit electrodes 20 on one of the main surfaces is prepared, the adhesive layer 2 is pasted on the side of the semiconductor wafer A on which the circuit electrodes are provided, and the support substrate 3 / adhesive layer 2 / A laminated body in which the semiconductor wafers A are laminated is obtained (see FIG. 2). The circuit electrode 20 may be provided with solder bumps for solder bonding. In addition, it is possible to provide solder bumps on the circuit electrodes of the semiconductor element mounting support member without providing the circuit electrodes 20 with solder bumps.

（ｂ）工程
次に、図３（ａ）に示されるように、半導体ウエハＡの回路電極２０が設けられている側とは反対側をグラインダー４によって研削し、半導体ウエハを薄化する。半導体ウエハの厚みは、例えば、１０μｍ〜３００μｍとすることができる。半導体装置の小型化、薄型化の観点から、半導体ウエハの厚みを２０μｍ〜１００μｍとすることが好ましい。 (B) Process Next, as shown in FIG. 3A, the side of the semiconductor wafer A opposite to the side where the circuit electrodes 20 are provided is ground by the grinder 4 to thin the semiconductor wafer. The thickness of the semiconductor wafer can be, for example, 10 μm to 300 μm. From the viewpoint of miniaturization and thinning of the semiconductor device, the thickness of the semiconductor wafer is preferably 20 μm to 100 μm.

（ｃ）工程
図３（ｂ）に示されるように、接着剤層２に支持基材３側から放射線を照射することにより接着剤層２を硬化させ、接着剤層２と支持基材３との間の接着力を低下させる。ここで、使用される放射線としては、例えば、紫外線、電子線、赤外線等が挙げられる。本実施形態においては、波長３００〜８００ｎｍの放射線を用いることが好ましく、その照射条件としては、照度：１５〜１００ｍＷ／ｃｍ２で、上記アクリルモノマーなどの（Ｃ）成分が重合する程度の照射量で照射することが好ましい。 (C) Process As FIG.3 (b) shows, the adhesive bond layer 2 is hardened by irradiating the adhesive bond layer 2 from the support base material 3 side, and the adhesive bond layer 2, the support base material 3, and Reduce the adhesive strength between. Here, examples of the radiation used include ultraviolet rays, electron beams, and infrared rays. In the present embodiment, it is preferable to use radiation having a wavelength of 300 to 800 nm, and the irradiation condition is such that the illuminance is 15 to 100 mW / cm 2 and the irradiation amount is such that the (C) component such as the acrylic monomer is polymerized. It is preferable to irradiate with.

（ｄ）工程
次に、図４（ａ）に示されるように、積層体の半導体Ａにダイシングテープ５を貼付け、これを所定の装置に配置して支持基材３を剥がす。このとき、接着剤層２に放射線が照射されていることにより、支持基材３を容易に剥がすことができる。支持基材３の剥離後、図４（ｂ）に示されるように、半導体ウエハＡ及び接着剤層２をダイシングソウ６によりダイシングする。こうして、半導体ウエハＡは複数の半導体素子Ａ’に分割され、接着剤層２は複数のフィルム状接着剤２ａに分割される。 (D) Process Next, as FIG.4 (a) shows, the dicing tape 5 is affixed on the semiconductor A of a laminated body, this is arrange | positioned to a predetermined apparatus, and the support base material 3 is peeled off. At this time, the support base material 3 can be easily peeled off because the adhesive layer 2 is irradiated with radiation. After the support substrate 3 is peeled off, the semiconductor wafer A and the adhesive layer 2 are diced by a dicing saw 6 as shown in FIG. Thus, the semiconductor wafer A is divided into a plurality of semiconductor elements A ′, and the adhesive layer 2 is divided into a plurality of film adhesives 2a.

続いて、ダイシングテープ５をエキスパンド（拡張）することにより、上記ダイシングにより得られた各半導体素子Ａ’を互いに離間させつつ、ダイシングテープ５側からニードルで突き上げられた半導体素子Ａ’及びフィルム状接着剤２ａからなるフィルム状接着剤付半導体素子１２を吸引コレット７で吸引してピックアップする。   Subsequently, by expanding (expanding) the dicing tape 5, the semiconductor elements A ′ obtained by the dicing tape 5 are pushed up with a needle while the semiconductor elements A ′ obtained by the dicing are separated from each other, and film-like adhesion is performed. The film-like adhesive-attached semiconductor element 12 made of the agent 2a is sucked and picked up by the suction collet 7.

（ｅ）工程
次に、図６に示されるように、フィルム状接着剤２ａが付着した半導体素子Ａ’の回路電極２０と、半導体素子搭載用支持部材８の回路電極２２とを位置合わせし、フィルム状接着剤付半導体素子１２と半導体素子搭載用支持部材８とを熱圧着する。この熱圧着により、回路電極２０と回路電極２２とが電気的に接続されるとともに、半導体素子Ａ’と半導体素子搭載用支持部材８との間にフィルム状接着剤２ａの硬化物が形成される。 (E) Process Next, as shown in FIG. 6, the circuit electrode 20 of the semiconductor element A ′ to which the film adhesive 2 a is attached and the circuit electrode 22 of the semiconductor element mounting support member 8 are aligned, The semiconductor element with film adhesive 12 and the semiconductor element mounting support member 8 are thermocompression bonded. By this thermocompression bonding, the circuit electrode 20 and the circuit electrode 22 are electrically connected, and a cured product of the film adhesive 2a is formed between the semiconductor element A ′ and the semiconductor element mounting support member 8. .

また、回路電極２０或いは回路電極２２にハンダバンプが設けられている場合、熱圧着により、回路電極２０と回路電極２２とがハンダ接合により電気的且つ機械的に接続される。   Further, when the solder bump is provided on the circuit electrode 20 or the circuit electrode 22, the circuit electrode 20 and the circuit electrode 22 are electrically and mechanically connected by solder bonding by thermocompression bonding.

熱圧着時の温度は、ハンダ接合の観点から、２００℃以上であることが好ましく、２２０℃〜２６０℃であることがより好ましい。熱圧着時間は、１〜２０秒とすることができる。熱圧着の圧力は、０．１〜５ＭＰａとすることができる。   The temperature during thermocompression bonding is preferably 200 ° C. or higher, more preferably 220 ° C. to 260 ° C., from the viewpoint of solder bonding. The thermocompression bonding time can be 1 to 20 seconds. The pressure for thermocompression bonding can be 0.1 to 5 MPa.

以上の工程を経て、半導体装置３０が得られる。本実施形態の半導体装置の製造方法では、本発明に係る回路部材接続用接着剤シートを用いることにより、上記（ａ）工程では、剥離やボイドの発生を十分抑制でき、上記（ｂ）工程ではウエハを破損やクラックの発生を十分防止しつつ研削することができ、上記（ｅ）工程では、ボイドの発生を十分抑制しつつ半導体素子と半導体素子搭載用支持部材とを良好に接着することができる。これにより、半導体装置３０は接続信頼性に優れたものになり得る。また、本実施形態の半導体装置の製造方法によれば、そのような半導体装置を歩留まりよく製造することができる。   The semiconductor device 30 is obtained through the above steps. In the manufacturing method of the semiconductor device according to the present embodiment, by using the adhesive sheet for connecting circuit members according to the present invention, in the step (a), generation of peeling and voids can be sufficiently suppressed, and in the step (b) The wafer can be ground while sufficiently preventing the occurrence of breakage and cracks. In the step (e), the semiconductor element and the semiconductor element mounting support member can be satisfactorily bonded while sufficiently suppressing the generation of voids. it can. Thereby, the semiconductor device 30 can be excellent in connection reliability. Moreover, according to the method for manufacturing a semiconductor device of this embodiment, such a semiconductor device can be manufactured with a high yield.

以下、実施例及び比較例を挙げて本発明をより具体的に説明する。但し、本発明はこれら実施例に限定されるものではない。   Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to these examples.

（実施例１）
熱可塑性樹脂としてフェノキシ樹脂「ＦＸ２９３」（東都化成株式会社製、製品名）１００質量部、エポキシ樹脂として「１０３２Ｈ６０」（ジャパンエポキシレジン株式会社製、製品名）８０質量部及び「ＹＬ−９８０」(ジャパンエポキシレジン株式会社製、製品名）６０質量部、放射線重合性化合物として「ＦＡ−５１３ＡＳ」（日立化成工業株式会社製、製品名）８０質量部、光開始剤として「Ｉｒｇ−１８４」（チバスペシャリティーケミカルズ（株）製、製品名）４．０質量部、マイクロカプセル型硬化促進剤として「ＨＸ−３９４１ＨＰ」（旭化成ケミカルズ株式会社製、製品名）１６０質量部、並びに、シランカップリング剤として「ＳＨ−６０４０」（東レダウコーニングシリコーン製、製品名）４質量部を混合した混合物を、トルエンと酢酸エチルの混合溶媒中に溶解して接着剤組成物のワニスを得た。得られたワニスを計量した後、ここに、フィラーとしてシリカ粒子「ＳＥ−２０５０」（株式会社アドマテックス社製、製品名、平均粒径０．５μｍ）を、ワニス中の「ＦＸ２９３」１００質量部に対して４００質量部の割合で加え、撹拌し分散した。得られた分散物を、支持基材としてのセパレータフィルム（ＰＥＴフィルム、厚み３８μｍ）上にロールコータを用いて塗布した後、７０℃のオーブンで１０分間乾燥させた。こうして、支持基材上に厚み３０μｍの接着剤層が形成されてなる回路部材接続用接着剤シートを得た。 Example 1
Phenoxy resin “FX293” (manufactured by Toto Kasei Co., Ltd., product name) as a thermoplastic resin, 100 parts by mass, “1032H60” (manufactured by Japan Epoxy Resin Co., Ltd., product name) as 80 parts by mass and “YL-980” ( Japan Epoxy Resin Co., Ltd., product name) 60 parts by mass, radiation-polymerizable compound “FA-513AS” (manufactured by Hitachi Chemical Co., Ltd., product name) 80 parts by mass, photoinitiator “Irg-184” (Ciba Specialty Chemicals Co., Ltd., product name) 4.0 parts by mass, “HX-3941HP” (manufactured by Asahi Kasei Chemicals Co., Ltd., product name) as a microcapsule type curing accelerator, and silane coupling agent “SH-6040” (product name of Toray Dow Corning Silicone, product name) mixed with 4 parts by mass Was dissolved in a mixed solvent of toluene and ethyl acetate to obtain a varnish of an adhesive composition. After weighing the obtained varnish, silica particles “SE-2050” (manufactured by Admatechs Co., Ltd., product name, average particle size 0.5 μm) were used as fillers, and 100 parts by mass of “FX293” in the varnish. The mixture was added at a ratio of 400 parts by mass, and stirred and dispersed. The obtained dispersion was applied on a separator film (PET film, thickness 38 μm) as a supporting substrate using a roll coater, and then dried in an oven at 70 ° C. for 10 minutes. Thus, an adhesive sheet for connecting circuit members, in which an adhesive layer having a thickness of 30 μm was formed on the support substrate, was obtained.

（実施例２）
「ＹＬ−９８０」に代えて「ＥＸ−１０２０」（大阪ガスケミカル株式会社製、製品名）を６０質量部配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 2)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 60 parts by mass of “EX-1020” (manufactured by Osaka Gas Chemical Co., Ltd., product name) was used instead of “YL-980”. .

（実施例３）
「ＦＡ−５１３ＡＳ」に代えて「Ａ−ＤＰＨ」（新中村工業化学株式会社製、製品名）を８０質量部配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 3)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 80 parts by mass of “A-DPH” (manufactured by Shin-Nakamura Kogyo Kagaku Co., Ltd., product name) was used instead of “FA-513AS”. It was.

（実施例４）
「ＦＸ２９３」に代えて「ＹＰ−７０」（東都化成株式会社製、製品名）１００質量部配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 Example 4
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 100 parts by mass of “YP-70” (product name, manufactured by Toto Kasei Co., Ltd.) was blended in place of “FX293”.

（実施例５）
メチロール化合物である「ＤＭＬ―ＰＯＰ」（本州化学工業株式会社、製品名）２０質量部を更に配合した以外は実施例３と同様にして、回路部材接続用接着剤シートを得た。 (Example 5)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 3, except that 20 parts by mass of “DML-POP” (Honshu Chemical Industry Co., Ltd., product name), which is a methylol compound, was further blended.

（実施例６）
まず、バックグラインド（ＢＧ）テープＡを以下の手順で作製した。主モノマーとして２−エチルヘキシルアクリレートとメチルメタクリレートとを、官能基モノマーとしてヒドロキシエチルアクリレートとアクリル酸とを用いて、溶液重合法によってアクリル共重合体を合成した。得られたアクリル共重合体の重量平均分子量は４０万、ガラス転移点は−３８℃であった。次いで、アクリル共重合体１００質量部に対し、多官能イソシアネート架橋剤（日本ポリウレタン工業株式会社製、商品名：コローネートＨＬ）１０質量部を配合して粘着剤ワニスを調製し、ポリオレフィンフィルム（オカモト株式会社製、商品名：ＷＮＨ−２１１０、厚さ１００μｍ）上に乾燥時の粘着剤層の厚さが１０μｍになるよう塗工乾燥した。更に、シリコーン系離型剤を塗布したニ軸延伸ポリエステルフィルム（帝人デュポンフィルム株式会社製、商品名：Ａ３１７１、厚さ２５μｍ）を粘着剤面にラミネートした。この粘着剤層付きフィルムを室温で１週間放置し十分にエージングを行った。エージング後の粘着剤層付きフィルムからニ軸延伸ポリエステルフィルムを剥がしたものをＢＧテープＡとした。 (Example 6)
First, a back grind (BG) tape A was produced by the following procedure. An acrylic copolymer was synthesized by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers. The resulting acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition point of -38 ° C. Next, an adhesive varnish was prepared by blending 10 parts by mass of a polyfunctional isocyanate crosslinking agent (trade name: Colonate HL, manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of the acrylic copolymer, and polyolefin film (Okamoto Co., Ltd.) Coated and dried so that the thickness of the pressure-sensitive adhesive layer at the time of drying was 10 μm. Further, a biaxially stretched polyester film (made by Teijin DuPont Films, trade name: A3171, thickness 25 μm) coated with a silicone release agent was laminated on the pressure-sensitive adhesive surface. The film with the pressure-sensitive adhesive layer was allowed to stand at room temperature for 1 week and sufficiently aged. BG tape A was obtained by removing the biaxially stretched polyester film from the film with an adhesive layer after aging.

熱可塑性樹脂としてフェノキシ樹脂「ＦＸ２９３」（東都化成株式会社製、製品名）１００質量部、エポキシ樹脂として「１０３２Ｈ６０」（ジャパンエポキシレジン株式会社製、製品名）８０質量部及び「ＹＬ−９８０」(ジャパンエポキシレジン株式会社製、製品名）６０質量部、放射線重合性化合物として「ＦＡ−５１３ＡＳ」（日立化成工業株式会社製、製品名）８０質量部、光開始剤として「Ｉｒｇ−１８４」（チバスペシャリティーケミカルズ（株）製、製品名）４．０質量部、マイクロカプセル型硬化促進剤として「ＨＸ−３９４１ＨＰ」（旭化成ケミカルズ株式会社製、製品名）１６０質量部、並びに、シランカップリング剤として「ＳＨ−６０４０」（東レダウコーニングシリコーン製、製品名）４質量部を混合した混合物を、トルエンと酢酸エチルの混合溶媒中に溶解して接着剤組成物のワニスを得た。得られたワニスを計量した後、ここに、フィラーとしてシリカ粒子「ＳＥ−２０５０」（株式会社アドマテックス社製、製品名、平均粒径０．５μｍ）を、ワニス中の「ＦＸ２９３」１００質量部に対して４００質量部の割合で加え、撹拌し分散した。得られた分散物を、保護フィルムである表面離型処理ポリエチレンテレフタレート（帝人デュポンフィルム株式会社製、テイジンテトロンフィルム：Ａ−３１、厚さ５０μｍ）上に乾燥後の厚みが３０μｍとなるように塗布し、７０℃で１０分間加熱乾燥して接着剤層を形成した。次いで、上記接着剤層上に、ＢＧテープＡの粘着剤層が接触するように上記ＢＧテープＡをラミネートすることによって、保護フィルム（表面離型処理ポリエチレンテレフタレート）、接着剤層、ＢＧテープＡからなる回路部材接続用接着剤シートを得た   Phenoxy resin “FX293” (manufactured by Toto Kasei Co., Ltd., product name) as thermoplastic resin is 100 parts by mass, “1032H60” (product name of Japan Epoxy Resin Co., Ltd., product name) is 80 parts by mass and “YL-980” ( Japan Epoxy Resin Co., Ltd., product name) 60 parts by mass, radiation-polymerizable compound “FA-513AS” (manufactured by Hitachi Chemical Co., Ltd., product name) 80 parts by mass, photoinitiator “Irg-184” (Ciba Specialty Chemicals Co., Ltd., product name) 4.0 parts by mass, “HX-3941HP” (manufactured by Asahi Kasei Chemicals Co., Ltd., product name) as a microcapsule type curing accelerator, and silane coupling agent “SH-6040” (product name of Toray Dow Corning Silicone, product name) mixed with 4 parts by mass Was dissolved in a mixed solvent of toluene and ethyl acetate to obtain a varnish of an adhesive composition. After weighing the obtained varnish, silica particles “SE-2050” (manufactured by Admatechs Co., Ltd., product name, average particle size 0.5 μm) were used as fillers, and 100 parts by mass of “FX293” in the varnish. The mixture was added at a ratio of 400 parts by mass, and stirred and dispersed. The obtained dispersion was applied on a surface release-treated polyethylene terephthalate (Teijin DuPont Films, Teijin Tetron Film: A-31, thickness 50 μm) as a protective film so that the thickness after drying was 30 μm. And heated and dried at 70 ° C. for 10 minutes to form an adhesive layer. Next, by laminating the BG tape A so that the adhesive layer of the BG tape A is in contact with the adhesive layer, the protective film (surface release treatment polyethylene terephthalate), the adhesive layer, and the BG tape A Obtained adhesive sheet for connecting circuit members

（比較例１）
「ＦＡ−５１３ＡＳ」及び「Ｉｒｇ−１８４」を配合しなかった以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 1)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that “FA-513AS” and “Irg-184” were not blended.

（比較例２）
「ＦＡ−５１３ＡＳ」及び「Ｉｒｇ−１８４」を配合しなかった以外は実施例４と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 2)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 4 except that “FA-513AS” and “Irg-184” were not blended.

（比較例３）
「ＨＸ−３９４１ＨＰ」を配合しなかった以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 3)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that “HX-3941HP” was not blended.

（比較例４）
「ＨＸ−３９４１ＨＰ」に代えて「２ＭＡＯＫ」（四国化成工業株式会社製、製品名）を１４質量部配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 4)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 14 parts by mass of “2MAOK” (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name) was used instead of “HX-3941HP”.

（比較例５）
「ＨＸ−３９４１ＨＰ」を配合しなかった以外は実施例６と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 5)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 6 except that “HX-3941HP” was not blended.

［回路部材接続用接着剤シートの評価］
上記で得られた回路部材接続用接着剤シートについて、下記の試験手順にしたがって、ウエハ貼付性、ウエハ裏面研削性及び埋込性を評価した。結果を表２に示す。 [Evaluation of adhesive sheet for connecting circuit members]
About the adhesive sheet for circuit member connection obtained above, wafer stickability, wafer back surface grindability, and embeddability were evaluated according to the following test procedures. The results are shown in Table 2.

＜ウエハ貼付性＞
支持台上に載せたシリコンウエハ（６インチ径、厚さ６２５μｍ）の回路電極が設けられている面に、回路部材接続用接着剤シートを、接着剤層をシリコンウエハ側にしてラミネート条件（温度８０℃、線圧０．５〜２ｋｇｆ／ｃｍ、送り速度０．５〜５ｍ／分）で加圧することにより積層した。このときの接着剤層の貼付状態を目視及び顕微鏡観察で視察し、下記の基準に基づいてウエハ貼付性を評価した。
Ａ：剥離、ボイドが観察されない。
Ｃ：剥離、ボイドが観察される。 <Wafer adhesion>
Laminating conditions (temperature) with an adhesive sheet for connecting circuit members on the surface of a silicon wafer (6 inch diameter, thickness 625 μm) mounted on a support base, with the adhesive layer facing the silicon wafer The layers were laminated by pressurizing at 80 ° C., linear pressure of 0.5 to 2 kgf / cm, and feeding speed of 0.5 to 5 m / min. The adhesive state of the adhesive layer at this time was inspected by visual observation and microscopic observation, and the wafer adhesiveness was evaluated based on the following criteria.
A: Peeling and voids are not observed.
C: Peeling and voids are observed.

＜ウエハ裏面研削性＞
上記と同様にして回路部材接続用接着剤シートとシリコンウエハ（厚み６２５μｍ）との積層体を作製し、これをバックグラインダーに配置し、厚みが２８０μｍとなるまでシリコンウエハの裏面を研削（バックグラインド）した。研削したウエハを目視及び顕微鏡観察で視察し、下記の基準に基づいてウエハ裏面研削性を評価した。
Ａ：ウエハの破損及びマイクロクラックの発生がない。
Ｃ：ウエハの破損又はマイクロクラックの発生がある。 <Wafer backside grindability>
In the same manner as described above, a laminate of an adhesive sheet for connecting circuit members and a silicon wafer (thickness: 625 μm) was prepared, and this was placed on a back grinder, and the back surface of the silicon wafer was ground until the thickness reached 280 μm (back grinding) )did. The ground wafer was inspected visually and under a microscope, and the wafer backside grindability was evaluated based on the following criteria.
A: There is no breakage of the wafer and generation of microcracks.
C: The wafer is broken or microcracks are generated.

＜埋込性＞
金ワイヤーバンプ（レベリング済み、バンプ高さ３０μｍ、１８４バンプ）付きチップ（１０ｍｍ角、厚み２８０μｍ）を、バンプ面を上に向けて仮圧着装置のステージ上に置いた。次に、回路部材接続用接着剤シートを支持基材ごと１１ｍｍ角に切断し、これを接着層側がバンプ面に向くようにしてチップに被せ、さらに、シリコーン製熱伝導性カバーフィルムを載せて、８０℃、１ＭＰａで加熱、加圧を行った。 <Embedment>
A chip (10 mm square, thickness 280 μm) with gold wire bumps (leveled, bump height 30 μm, 184 bumps) was placed on the stage of the temporary pressure bonding apparatus with the bump surface facing up. Next, the circuit board connecting adhesive sheet is cut into 11 mm squares together with the supporting substrate, and this is placed on the chip so that the adhesive layer side faces the bump surface, and further, a silicone heat conductive cover film is placed thereon, Heating and pressing were performed at 80 ° C. and 1 MPa.

加熱加圧後、接着剤層から支持基材を剥がし、接着剤層に対して紫外線を用いて照度１５ｍＷ／ｃｍ２で５００ｍＪの露光を行い、接着剤付きチップを得た。次に、得られた接着剤付きチップを、Ｎｉ／ＡｕめっきＣｕ回路プリント基板と位置合わせをし、次いで、２５０℃、５ＭＰａ、１０秒の加熱、加圧を行った。こうして得られた半導体装置について、ボイド状況を超音波顕微鏡で視察し、下記の基準に基づいて埋込性を評価した。
Ａ：ボイドがほとんどなく、ボイドが埋込面積の１０％未満である。
Ｃ：ボイドが多く存在し、ボイドが埋込面積の１０％以上である。 After heating and pressing, the supporting base material was peeled off from the adhesive layer, and the adhesive layer was exposed to 500 mJ at an illuminance of 15 mW / cm 2 using ultraviolet rays to obtain a chip with an adhesive. Next, the obtained chip with adhesive was aligned with a Ni / Au plated Cu circuit printed circuit board, and then heated and pressurized at 250 ° C., 5 MPa, and 10 seconds. About the semiconductor device obtained in this way, the void situation was observed with the ultrasonic microscope, and embedding property was evaluated based on the following reference | standard.
A: There are almost no voids, and the voids are less than 10% of the embedded area.
C: Many voids exist, and the voids are 10% or more of the embedded area.

＜支持基材剥離性＞
上記ウエハ裏面研削性の評価サンプルを、照度：２０ｍＷ／ｃｍ２、露光量：５００ｍＪの条件で紫外線照射し、その後、回路部材接続用接着剤シートの支持基材（又はＢＧテープ）を５ｍｍ／秒の速度で剥離した。剥離した後の支持基材（又はＢＧテープ）と回路部材接続用接着剤付きウエハの表面を目視及び顕微鏡観察で視察し、下記の基準に基づいて支持基材剥離性を評価した。
Ａ：支持基材（又はＢＧテープ）が接着剤層から剥離でき、接着剤層とウエハの剥離が無い。
Ｂ：支持基材（又はＢＧテープ）が接着剤層から一部剥離できず、一部接着剤層ごとウエハから剥離してしまう。（接着剤層のウエハからの剥離面積が３０％未満）
Ｃ：支持基材（又はＢＧテープ）が接着剤層から剥離できず、接着剤層ごとウエハから剥離してしまう。（接着剤層のウエハからの剥離面積が３０％以上） <Supporting substrate peelability>
The wafer back surface grindability evaluation sample was irradiated with ultraviolet rays under the conditions of illuminance: 20 mW / cm 2 and exposure amount: 500 mJ, and then the support substrate (or BG tape) of the adhesive sheet for connecting circuit members was 5 mm / second. It peeled at the speed of. The support substrate (or BG tape) after peeling and the surface of the wafer with the adhesive for connecting circuit members were inspected visually and under a microscope, and the support substrate peelability was evaluated based on the following criteria.
A: The supporting substrate (or BG tape) can be peeled from the adhesive layer, and there is no peeling of the adhesive layer and the wafer.
B: A support base material (or BG tape) cannot partly peel from an adhesive layer, and part of the adhesive layer is peeled off from the wafer. (Peeling area of adhesive layer from wafer is less than 30%)
C: The supporting substrate (or BG tape) cannot be peeled off from the adhesive layer, and the entire adhesive layer is peeled off from the wafer. (Peeling area of adhesive layer from wafer is 30% or more)

Figure 0004766200
Figure 0004766200

１…保護フィルム、２…接着剤層、３…支持基材、４…グラインダー、５…ダイシングテープ、６…ダイシングソウ、７…吸引コレット、８…半導体素子搭載用支持部材、１０…回路部材接続用接着剤シート、１２…フィルム状接着剤付半導体素子、２０，２２…回路電極、３０…半導体装置、Ａ…半導体ウエハ、Ｂ…放射線。 DESCRIPTION OF SYMBOLS 1 ... Protective film, 2 ... Adhesive layer, 3 ... Support base material, 4 ... Grinder, 5 ... Dicing tape, 6 ... Dicing saw, 7 ... Suction collet, 8 ... Support member for mounting semiconductor elements, 10 ... Connection of circuit members Adhesive sheet for sheet, 12 ... semiconductor element with film adhesive, 20, 22 ... circuit electrode, 30 ... semiconductor device, A ... semiconductor wafer, B ... radiation.

Claims (4)

（Ａ）重量平均分子量が２万以上１０万以下の熱可塑性樹脂と、
（Ｂ）エポキシ樹脂と、
（Ｃ）放射線重合性化合物と、
（Ｄ）光開始剤と、
（Ｅ）マイクロカプセル型の硬化促進剤と、
を含む、接着剤組成物であって、
（Ａ）成分１００質量部に対して、（Ｂ）成分５〜５００質量部、（Ｃ）成分５〜２００質量部、（Ｄ）成分０．１〜３０質量部、（Ｅ）成分５０〜３００質量部含み、
主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの前記回路電極が設けられている側に、前記接着剤組成物を含む回路部材接続用接着剤シートの接着剤層を貼付け、前記半導体ウエハの前記回路電極が設けられている側とは反対側を研削して前記半導体ウエハを薄化し、半導体素子搭載用支持部材に接着するために用いられる、接着剤組成物。 (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000;
(B) an epoxy resin;
(C) a radiation polymerizable compound;
(D) a photoinitiator;
(E) a microcapsule type curing accelerator;
An adhesive composition comprising:
(A) With respect to 100 mass parts of component, (B) Component 5-500 mass part, (C) Component 5-200 mass part, (D) Component 0.1-30 mass part, (E) Component 50-300 Including mass parts,
A semiconductor wafer having a plurality of circuit electrodes on one of its main surfaces is prepared, and an adhesive layer of an adhesive sheet for connecting a circuit member containing the adhesive composition on the side of the semiconductor wafer on which the circuit electrodes are provided The adhesive composition is used for pasting and thinning the semiconductor wafer by grinding the opposite side of the semiconductor wafer to the side on which the circuit electrodes are provided, and bonding the semiconductor wafer to a support member for mounting a semiconductor element. 無機フィラーを更に含む、請求項１に記載の接着剤組成物。   The adhesive composition according to claim 1, further comprising an inorganic filler. カップリング剤を更に含む、請求項１又は２に記載の接着剤組成物。   The adhesive composition according to claim 1, further comprising a coupling agent. 主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの前記回路電極が設けられている側に、回路部材接続用接着剤シートの接着剤層を貼付ける工程と、
前記半導体ウエハの前記回路電極が設けられている側とは反対側を研削して前記半導体ウエハを薄化する工程と、
前記接着剤層に放射線を照射する工程と、
前記薄化した半導体ウエハ及び前記放射線が照射された接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
前記フィルム状接着剤付半導体素子と半導体素子搭載用支持部材とを前記フィルム状接着剤付半導体素子のフィルム状接着剤を介して接着する工程と、
を備え、前記回路部材接続用接着剤シートが、（Ａ）重量平均分子量が２万以上１０万以下の熱可塑性樹脂と、（Ｂ）エポキシ樹脂と、（Ｃ）放射線重合性化合物と、（Ｄ）光開始剤と、（Ｅ）マイクロカプセル型の硬化促進剤と、を含み、（Ａ）成分１００質量部に対して、（Ｂ）成分５〜５００質量部、（Ｃ）成分５〜２００質量部、（Ｄ）成分０．１〜３０質量部、（Ｅ）成分５０〜３００質量部含む、半導体装置の製造方法。 Preparing a semiconductor wafer having a plurality of circuit electrodes on one side of the main surface, and affixing an adhesive layer of an adhesive sheet for connecting circuit members on the side of the semiconductor wafer on which the circuit electrodes are provided;
Grinding the opposite side of the semiconductor wafer from the side where the circuit electrodes are provided to thin the semiconductor wafer;
Irradiating the adhesive layer with radiation;
Dicing the thinned semiconductor wafer and the adhesive layer irradiated with the radiation into individual semiconductor elements with a film adhesive; and
Bonding the semiconductor element with a film adhesive and a support member for mounting a semiconductor element via the film adhesive of the semiconductor element with a film adhesive; and
The adhesive sheet for connecting circuit members comprises (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000, (B) an epoxy resin, (C) a radiation polymerizable compound, and (D ) a photoinitiator, (E) seen containing a microcapsulated curing accelerator, the, (a) with respect to 100 parts by weight of component, (B) component 5 to 500 parts by weight, (C) component 5 to 200 parts by weight, (D) component 0.1 to 30 parts by weight, (E) component 50 to 300 parts by mass including manufacturing method of a semiconductor device.
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