JP4414533B2 - Defect inspection equipment - Google Patents

Defect inspection equipment Download PDF

Info

Publication number
JP4414533B2
JP4414533B2 JP37195799A JP37195799A JP4414533B2 JP 4414533 B2 JP4414533 B2 JP 4414533B2 JP 37195799 A JP37195799 A JP 37195799A JP 37195799 A JP37195799 A JP 37195799A JP 4414533 B2 JP4414533 B2 JP 4414533B2
Authority
JP
Japan
Prior art keywords
field image
defect
bright field
bright
dark field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP37195799A
Other languages
Japanese (ja)
Other versions
JP2001183301A (en
Inventor
孝浩 二宮
裕子 井上
茂 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP37195799A priority Critical patent/JP4414533B2/en
Publication of JP2001183301A publication Critical patent/JP2001183301A/en
Application granted granted Critical
Publication of JP4414533B2 publication Critical patent/JP4414533B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G01N2021/8825—Separate detection of dark field and bright field

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、シリコンウェハ等の半導体ウェハ（以下、ウェハと称す）、プリント基板や磁気ディスク基板等の基板、または液晶パネル等の表面に存在する異物や結晶欠陥（以下、これらを総称して欠陥と称す）を検査する欠陥検査装置及び方法に関し、特に検出した欠陥を表示画像に基づいて容易に確認（以下、レビューと称す）できるようにした欠陥検査装置及び方法に関する。
【０００２】
【従来の技術】
ウェハや基板等の表面の欠陥を検査する欠陥検査装置は、被検査物の表面の欠陥を検出してその存在を通知するものである。このような欠陥検査装置を用いて欠陥の検査を行う場合、検出された欠陥がどのような欠陥であるか、あるいは装置の誤検出ではないかを確認するため、検出された欠陥を検査者がレビューしたいという要求がある。このため欠陥検査装置は、被検査物の欠陥を検出して欠陥の存在を通知する検査機能と、この検査機能で検出された欠陥の存在する被検査物の画像を表示装置に表示する観察機能の２つの機能を備えている。従来の欠陥検査装置は、上記検査機能を、レーザ光を斜めに照射した暗視野照明下で被検査物からの散乱光を検出することによって行い、上記観察機能を、白色光を垂直に照射した明視野照明下で被検査物からの反射光を検出することによって行っていた。通常、欠陥検査装置は被検査物の欠陥の存在を通知する画面と被検査物の明視野画像とを表示装置に表示することができるので、検査者はその中から特定の欠陥についてさらに観察しようとする場合には、その欠陥を指定することによってその欠陥について明視野画像によるレビューを行うことができた。なお、検査者が行うレビューをさらに自動化したものとして、特開平１１−５１６２２号公報に記載のものがある。
【０００３】
【発明が解決しようとする課題】
従来の欠陥検出装置は、観察機能を行う明視野系光学装置の分解能によって明視野画像の解像度が決まり、最小で約０．３μｍ程度の大きさの欠陥まで画像表示することが可能であった。従来はこの程度の大きさの欠陥を検査できれば充分であった。しかしながら、近年の半導体集積回路の高集積化及び回路パターンの微細化に伴い、より微小な欠陥を検査する要求が生じてきた。しかしながら、０．３μｍよりも小さな欠陥については観察機能を行う明視野系光学装置の分解能の限界から明視野画像による観察を行ったとしても、それが欠陥であるのか、それとも装置の誤検出によるものなのかの判別を行うことができなかった。
【０００４】
本発明は、従来の欠陥検査装置では確認することのできなかった微小な欠陥の存在を容易に確認することのできる欠陥検査装置及び方法を提供することを目的とする。
【０００５】
【課題を解決するための手段】
請求項１に記載された本発明に係る欠陥検査装置は、明視野照明下で検出した反射光から被検査物の明視野画像を作成する明視野画像作成手段と、暗視野照明下で検出した散乱光から被検査物の暗視野画像を作成する暗視野画像作成手段と、前記明視野画像及び前記暗視野画像を表示する表示手段と、前記暗視野画像作成手段で作成した被検査物の暗視野画像及び前記明視野画像作成手段で作成した被検査物の明視野画像を前記表示手段に同時に表示するように制御する表示制御手段とを備えたものである。
【０００６】
そして、請求項１に記載された本発明に係る欠陥検査装置は、さらに、暗視野照明下で検出した散乱光から被検査物の表面の欠陥を検出する欠陥検出手段を備え、前記表示制御手段は、前記欠陥検出手段で検出した欠陥の存在をマークで表示することにより通知するマップ画面及び前記明視野画像作成手段で作成した被検査物の明視野画像を前記表示手段に同時に表示する機能を備えたものである。
【０００７】
被検査物の暗視野画像は、暗視野照明下で検出した被検査物からの散乱光の強度のみを表示した濃淡画像であり、検査者が見たときに欠陥の形状等は理解しづらい反面、明視野画像に比べて微小な欠陥まで表示することができる。被検査物に明視野画像では表示できない大きさの欠陥が存在するとき、明視野画像に欠陥は現れないが、暗視野画像には欠陥が現れる。従って、請求項１の発明によれば、被検査物の明視野画像と暗視野画像を表示装置に同時に表示することにより、検査者は両画像を見比べて明視野画像では表示できない微小な欠陥が存在することを確認することができる。また、明視野画像で表示できる大きさの欠陥のみが存在する場合は暗視野画像を表示する必要がなくなるので、効率良くレビューを行うことができる。
【００１１】
【発明の実施の形態】
以下、本発明の実施の形態を添付図面に従って説明する。図１は本発明の微小欠陥のレビュー装置の一実施の形態を示す構成図である。レビュー装置は、ステージ装置１０と、暗視野系光学装置１００と、明視野系光学装置２００と、画像処理装置３００とを備えている。ステージ装置１０は、被検査物をＹ軸方向（図面の奥行き方向）に移動させるＹステージ１１と、被検査物をＸ軸方向（図面の横方向）に移動させるＸステージ１２と、被検査物を乗せて回転する回転テーブル１３と、図示しない自動焦点合わせ機構とを備えている。Ｘステージ１２は、図面に実線で示すように暗視野系光学装置１００の下方に位置できるとともに、Ｙステージ上を図面の横方向にスライドして、図面に破線で示すように明視野系光学装置２００の下方に位置できるようになっている。従ってテーブル装置１０は、暗視野系光学装置１００の下方または明視野系光学装置２００の下方で、被検査物のＸ／Ｙ走査を行い被検査物の表面全体を走査できるように構成されている。回転テーブル１３には被検査物であるウェハ１が乗せられ、ウェハ１の上面には複数の半導体チップが形成されている。
【００１２】
テーブル装置１０の上方には、暗視野系光学装置１００と、明視野系光学装置２００とが設置されている。暗視野系光学装置１００は、レーザ光照射装置１１０と、検査用レンズ１２０と、リニアセンサ１３０とを備えている。レーザ光照射装置１１０は、ステージ装置１０の斜め上方に設置され、レーザ光をウェハ１に低角度で斜めに照射する。ウェハ１に斜めに照射されたレーザ光は、ウェハ１の表面の凹凸で乱反射され、散乱光が発生する。検査用レンズ１２０は、ウェハ１の表面からの散乱光を集光して、リニアセンサ１３０の受光面に結像を作る。このとき、ウェハ１の上面の各チップに規則的な回路パターンが形成されている場合は、規則的な回路パターンから発生する散乱光を遮る空間フィルタ（図示せず）をフーリエ変換面に設けることにより、チップの表面に存在する欠陥から発生した散乱光のみによる結像を作ることができる。リニアセンサ１３０は、複数の光電変換素子をＹ軸方向に配列して構成され、ステージ装置１０による被検査物の走査毎に走査ラインの散乱光を検出して電気信号に変換し、画像処理装置３００内の暗視野画像作成装置３１０へ検出信号を出力する。暗視野画像作成装置３１０は、リニアセンサ１３０の検出信号をＡ／Ｄ変換し、ディジタル値に変換して記憶する。ステージ装置１０による走査範囲のＸ／Ｙ走査が終了すると、暗視野画像作成装置３１０は記憶した検出信号のディジタル値から走査範囲のウェハ１の暗視野画像を作成する。なお、本実施の形態では散乱光の検出にリニアセンサ１３０を使用しているが、光電子増倍管等のポイントセンサやエリアセンサを用いてもよい。
【００１３】
一方、明視野系光学装置２００は、白色光照射装置２１０と、集光レンズ２２０と、ハーフミラー２３０と、対物レンズ２４０と、結像レンズ２５０と、ＣＣＤカメラ２６０とを備えている。白色光照射装置２１０から照射された白色光は、集光レンズ２２０を通過した後、ハーフミラー２３０で反射されてウェハ１に垂直に照射される。ウェハ１の表面で反射された白色光の反射光は、対物レンズ２４０で集光されてハーフミラー２３０を通過した後、結像レンズ２５０でＣＣＤカメラ２６０の受光面に結像される。ＣＣＤカメラ２６０の出力は画像処理装置３００内の明暗視野画像作成装置３２０へ送られ、明視野画像作成装置３２０でウェハ１の明視野画像が作成される。なお、本実施の形態では反射光の検出にＣＣＤカメラ２６０を使用しているが、光電子増倍管等のポイントセンサやリニアセンサを用い、ステージ装置１０による走査範囲のＸ／Ｙ走査が終了してから明視野画像作成装置３２０で明視野画像を作成してもよい。
【００１４】
次に、画像処理装置３００の動作を、図２及び図３により説明する。図２は本発明の微小欠陥のレビュー方法の一実施の形態を示すフローチャートであり、図３は表示装置の表示画面例を示す図である。最初に欠陥検出装置３３０は、暗視野画像作成装置３１０に記憶された散乱光の検出信号のディジタル値からチップ２の表面の欠陥を検出する（ステップ４１０）。欠陥の検出は、検査対象のチップの走査ラインのデータと、隣接するチップの同じ走査ラインのデータを比較することにより行う。次に明視野画像作成装置３２０は、チップ２の明視野画像を作成する（ステップ４２０）。続いて表示制御装置３４０は、欠陥検出装置３３０で検出した欠陥の存在を通知する画面及び明視野画像作成装置３２０で作成したチップ２の明視野画像を表示装置３５０に同時に表示し、検査者はこの画面を見て欠陥を確認する（ステップ４３０）。このとき、欠陥検出装置３３０で検出した欠陥の存在を通知する画面としては、ウェハ１上にチップが配列された状態を示すマップ画面を用い、欠陥が検出された場合はマップ画面の該当するチップ上に欠陥が存在することを丸いマークで表示する。
【００１５】
図３（ａ）は、ウェハ１のチップ２の表面に欠陥３が存在し、欠陥３が明視野画像で表示できる大きさであった場合の表示装置３５０の表示画面例を示すものである。この場合、画面右のマップ画面には欠陥検出装置３３０で検出した欠陥が存在することがチップ２に丸いマークで表示され、画面左の明視野画像にはチップ２の欠陥３が現れる。従って、検査者は両方の画面を見ながら欠陥３を確認することができ（ステップ４４０）、レビューは終了する。一方、図３（ｂ）は、ウェハ１のチップ２の表面に欠陥３が存在し、欠陥３が明視野画像で表示できない微小なものであった場合の表示装置３５０の表示画面例を示すものである。この場合、画面右のマップ画面には欠陥検出装置３３０で検出した欠陥が存在することがチップ２に丸いマークで表示されるが、画面左の明視野画像には欠陥が現れない。従って、検査者はチップ２の表面に本当に欠陥が存在するのか、あるいは装置の誤検出なのか確認することができない（ステップ４４０）。
【００１６】
チップ２の明視野画像で欠陥が確認できない場合、暗視野画像作成装置３１０は、検査者の指示によりチップ２の暗視野画像を作成する（ステップ４５０）。続いて表示制御装置３４０は、暗視野画像作成装置３１０で作成したチップ２の暗視野画像及び明視野画像作成装置３２０で作成したチップ２の明視野画像を表示装置３５０に同時に表示し、検査者はこの画面を見て欠陥を確認する（ステップ４６０）。図３（ｃ）は、このときの表示装置３５０の表示画面例を示すものである。この場合、画面右の暗視野画面にはチップ２の欠陥３が現れ、画面左の明視野画像にはチップ２の欠陥３が現れない。従って、検査者は両画像を見比べて明視野画像では表示できない微小な欠陥が存在することを確認することができる。
【００１７】
なお、以上説明した実施の形態において、欠陥検出装置３３０は暗視野画像作成装置３１０に記憶された散乱光の検出信号のディジタル値から欠陥検出を行っているが、リニアセンサ１３０の検出信号を直接入力して行ってもよい。また、欠陥検出装置３３０で検出した欠陥の存在を通知する画面としては、図３のマップ画面に限らず、被検査物の欠陥の存在を通知するものであればよい。
【００１８】
この実施の形態によれば、被検査物の明視野画像と暗視野画像を表示装置に同時に表示することにより、検査者は両画像を見比べて明視野画像では表示できない微小な欠陥が存在することを確認することができる。また、明視野画像で表示できる大きさの欠陥のみが存在する場合は暗視野画像を表示する必要がなくなるので、効率良くレビューを行うことができる。
【００１９】
本発明は、上述したウェハの検査に限らず、プリント基板や磁気ディスク基板等の基板の検査、及びの液晶パネル等の検査にも適用することができる。
【００２０】
【発明の効果】
本発明の欠陥検査装置及び方法によれば、従来の欠陥検査装置では確認できなかった微小な欠陥を容易に認識することができる。
【図面の簡単な説明】
【図１】 本発明の微小欠陥のレビュー装置の一実施の形態を示す構成図である。
【図２】 本発明の微小欠陥のレビュー方法の一実施の形態を示すフローチャートである。
【図３】 表示装置の表示画面の一例を示す図である。
【符号の説明】
１…ウェハ
２…チップ
３…欠陥
１０…ステージ装置
１００…暗視野系光学装置
２００…明視野系光学装置
３００…画像処理装置
３１０…暗視野画像作成装置
３２０…明視野画像作成装置
３３０…欠陥検出装置
３４０…表示制御装置
３５０…表示装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor wafer such as a silicon wafer (hereinafter referred to as a wafer), a substrate such as a printed circuit board or a magnetic disk substrate, or a foreign matter or crystal defect present on the surface of a liquid crystal panel or the like (hereinafter collectively referred to as a defect). In particular, the present invention relates to a defect inspection apparatus and method in which a detected defect can be easily confirmed (hereinafter referred to as a review) based on a display image.
[0002]
[Prior art]
A defect inspection apparatus for inspecting a surface defect such as a wafer or a substrate detects a defect on the surface of an object to be inspected and notifies its presence. When inspecting a defect using such a defect inspection apparatus, an inspector detects the detected defect in order to confirm what kind of defect the detected defect is or a false detection of the apparatus. There is a request to review. Therefore, the defect inspection apparatus has an inspection function for detecting a defect in the inspection object and notifying the presence of the defect, and an observation function for displaying an image of the inspection object having the defect detected by the inspection function on the display device. It has two functions. The conventional defect inspection apparatus performs the inspection function by detecting scattered light from the inspection object under dark field illumination irradiated obliquely with laser light, and the observation function is irradiated with white light vertically. This was done by detecting reflected light from the object under bright field illumination. Usually, the defect inspection apparatus can display a screen for notifying the existence of a defect in the inspection object and a bright-field image of the inspection object on the display device, so that the inspector should further observe the specific defect from the screen. In this case, the defect can be reviewed with a bright field image by designating the defect. As a further automated review performed by an inspector, there is one described in JP-A-11-51622.
[0003]
[Problems to be solved by the invention]
In the conventional defect detection device, the resolution of the bright field image is determined by the resolution of the bright field system optical device that performs the observation function, and it is possible to display an image up to a defect having a size of about 0.3 μm at the minimum. Conventionally, it was sufficient to be able to inspect defects of this size. However, with the recent high integration of semiconductor integrated circuits and miniaturization of circuit patterns, there has been a demand for inspecting finer defects. However, for defects smaller than 0.3 μm, even if observation with a bright-field image is performed due to the limit of resolution of a bright-field optical device that performs an observation function, it is a defect or due to erroneous detection of the device Could not be determined.
[0004]
An object of this invention is to provide the defect inspection apparatus and method which can confirm easily the presence of the micro defect which was not able to be confirmed with the conventional defect inspection apparatus.
[0005]
[Means for Solving the Problems]
The defect inspection apparatus according to the present invention described in claim 1 is a bright-field image creating means for creating a bright-field image of an inspection object from reflected light detected under bright-field illumination, and detected under dark-field illumination. Dark field image creation means for creating a dark field image of the inspection object from the scattered light, display means for displaying the bright field image and the dark field image, and darkness of the inspection object created by the dark field image creation means And a display control means for controlling the display means to simultaneously display the bright field image of the inspection object created by the visual field image and the bright field image creation means on the display means.
[0006]
The defect inspection apparatus according to the present invention described in claim 1 further includes defect detection means for detecting defects on the surface of the inspection object from scattered light detected under dark field illumination, and the display control means Has a function of simultaneously displaying on the display means a map screen for notifying by displaying the presence of a defect detected by the defect detecting means by a mark and a bright field image of the inspection object created by the bright field image creating means. It is provided.
[0007]
The dark field image of the inspection object is a grayscale image that displays only the intensity of scattered light from the inspection object detected under dark field illumination, and the shape of the defect is difficult to understand when viewed by the inspector. Even fine defects can be displayed compared to bright field images. When a defect having a size that cannot be displayed in the bright field image exists on the inspection object, the defect does not appear in the bright field image, but the defect appears in the dark field image. Therefore, according to the first aspect of the present invention, the bright field image and the dark field image of the object to be inspected are displayed on the display device at the same time, so that the inspector compares the two images and has a minute defect that cannot be displayed in the bright field image. It can be confirmed that it exists. In addition, when there is only a defect having a size that can be displayed as a bright-field image, it is not necessary to display a dark-field image, so that reviews can be performed efficiently.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a block diagram showing an embodiment of a micro defect review apparatus according to the present invention. The review device includes a stage device 10, a dark field system optical device 100, a bright field system optical device 200, and an image processing device 300. The stage apparatus 10 includes a Y stage 11 that moves the inspection object in the Y-axis direction (depth direction of the drawing), an X stage 12 that moves the inspection object in the X-axis direction (lateral direction of the drawing), and the inspection object. And a rotary table 13 that rotates with the lens and an automatic focusing mechanism (not shown). The X stage 12 can be positioned below the dark field system optical device 100 as shown by a solid line in the drawing, and slides on the Y stage in the horizontal direction of the drawing, and as shown by a broken line in the drawing, a bright field system optical device. It can be positioned below 200. Therefore, the table device 10 is configured to scan the entire surface of the inspection object by performing X / Y scanning of the inspection object below the dark field optical device 100 or below the bright field optical device 200. . A wafer 1 as an inspection object is placed on the turntable 13, and a plurality of semiconductor chips are formed on the upper surface of the wafer 1.
[0012]
Above the table device 10, a dark field system optical device 100 and a bright field system optical device 200 are installed. The dark field system optical device 100 includes a laser beam irradiation device 110, an inspection lens 120, and a linear sensor 130. The laser beam irradiation device 110 is installed obliquely above the stage device 10 and irradiates the wafer 1 with the laser beam obliquely at a low angle. The laser beam irradiated obliquely onto the wafer 1 is irregularly reflected by the irregularities on the surface of the wafer 1 to generate scattered light. The inspection lens 120 collects scattered light from the surface of the wafer 1 and forms an image on the light receiving surface of the linear sensor 130. At this time, when a regular circuit pattern is formed on each chip on the upper surface of the wafer 1, a spatial filter (not shown) that blocks scattered light generated from the regular circuit pattern is provided on the Fourier transform surface. Thus, it is possible to form an image only by scattered light generated from defects present on the surface of the chip. The linear sensor 130 is configured by arranging a plurality of photoelectric conversion elements in the Y-axis direction, detects the scattered light of the scanning line every time the stage device 10 scans the object to be inspected, and converts it into an electrical signal. A detection signal is output to the dark field image creation device 310 in 300. The dark field image creation device 310 A / D converts the detection signal of the linear sensor 130, converts it to a digital value, and stores it. When the X / Y scanning of the scanning range by the stage device 10 is completed, the dark field image creation device 310 creates a dark field image of the wafer 1 in the scanning range from the stored digital value of the detection signal. In this embodiment, the linear sensor 130 is used to detect scattered light, but a point sensor such as a photomultiplier tube or an area sensor may be used.
[0013]
On the other hand, the bright field optical device 200 includes a white light irradiation device 210, a condenser lens 220, a half mirror 230, an objective lens 240, an imaging lens 250, and a CCD camera 260. The white light emitted from the white light irradiation device 210 passes through the condenser lens 220, is reflected by the half mirror 230, and is applied to the wafer 1 vertically. The white light reflected from the surface of the wafer 1 is collected by the objective lens 240, passes through the half mirror 230, and then forms an image on the light receiving surface of the CCD camera 260 by the imaging lens 250. The output of the CCD camera 260 is sent to a bright / dark field image creating device 320 in the image processing apparatus 300, and a bright field image of the wafer 1 is created by the bright field image creating device 320. In this embodiment, the CCD camera 260 is used to detect reflected light. However, the X / Y scanning of the scanning range by the stage device 10 is completed using a point sensor such as a photomultiplier tube or a linear sensor. Then, the bright field image creation device 320 may create a bright field image.
[0014]
Next, the operation of the image processing apparatus 300 will be described with reference to FIGS. FIG. 2 is a flowchart showing an embodiment of the micro defect review method of the present invention, and FIG. 3 is a diagram showing a display screen example of the display device. First, the defect detection device 330 detects a defect on the surface of the chip 2 from the digital value of the scattered light detection signal stored in the dark field image creation device 310 (step 410). The defect is detected by comparing the data of the scan line of the chip to be inspected with the data of the same scan line of the adjacent chip. Next, the bright field image creation device 320 creates a bright field image of the chip 2 (step 420). Subsequently, the display control device 340 simultaneously displays a screen for notifying the presence of the defect detected by the defect detection device 330 and the bright field image of the chip 2 created by the bright field image creation device 320 on the display device 350. The screen is checked for defects (step 430). At this time, as a screen for notifying the presence of a defect detected by the defect detection device 330, a map screen showing a state in which chips are arranged on the wafer 1 is used. If a defect is detected, the corresponding chip on the map screen is displayed. The presence of a defect is displayed with a round mark.
[0015]
FIG. 3A shows an example of a display screen of the display device 350 when the defect 3 exists on the surface of the chip 2 of the wafer 1 and the defect 3 has a size that can be displayed as a bright field image. In this case, the presence of a defect detected by the defect detection device 330 is displayed as a round mark on the chip 2 on the map screen on the right side of the screen, and the defect 3 of the chip 2 appears in the bright field image on the left side of the screen. Therefore, the inspector can confirm the defect 3 while viewing both screens (step 440), and the review is completed. On the other hand, FIG. 3B shows an example of a display screen of the display device 350 when the defect 3 exists on the surface of the chip 2 of the wafer 1 and the defect 3 is a minute one that cannot be displayed as a bright field image. It is. In this case, the presence of a defect detected by the defect detection device 330 is displayed as a round mark on the chip 2 on the map screen on the right side of the screen, but no defect appears in the bright field image on the left side of the screen. Therefore, the inspector cannot confirm whether the surface of the chip 2 really has a defect or an erroneous detection of the apparatus (step 440).
[0016]
When the defect cannot be confirmed in the bright field image of the chip 2, the dark field image creation device 310 creates a dark field image of the chip 2 in accordance with the instructor's instruction (step 450). Subsequently, the display control device 340 displays the dark field image of the chip 2 created by the dark field image creation device 310 and the bright field image of the chip 2 created by the bright field image creation device 320 on the display device 350 at the same time. Sees this screen and checks for defects (step 460). FIG. 3C shows a display screen example of the display device 350 at this time. In this case, the defect 3 of the chip 2 appears on the dark field screen on the right side of the screen, and the defect 3 of the chip 2 does not appear on the bright field image on the left side of the screen. Therefore, the inspector can compare the two images and confirm that there are minute defects that cannot be displayed in the bright field image.
[0017]
In the embodiment described above, the defect detection device 330 performs defect detection from the digital value of the scattered light detection signal stored in the dark field image creation device 310, but the detection signal of the linear sensor 130 is directly used. You may enter it. Further, the screen for notifying the existence of the defect detected by the defect detection device 330 is not limited to the map screen of FIG.
[0018]
According to this embodiment, the bright field image and the dark field image of the inspection object are simultaneously displayed on the display device, so that the inspector compares the two images and there is a minute defect that cannot be displayed in the bright field image. Can be confirmed. In addition, when there is only a defect having a size that can be displayed as a bright-field image, it is not necessary to display a dark-field image, so that reviews can be performed efficiently.
[0019]
The present invention can be applied not only to the above-described inspection of wafers but also to inspection of substrates such as printed boards and magnetic disk substrates, and inspection of liquid crystal panels and the like.
[0020]
【The invention's effect】
According to the defect inspection apparatus and method of the present invention, it is possible to easily recognize a minute defect that could not be confirmed by a conventional defect inspection apparatus.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an embodiment of a micro defect review apparatus according to the present invention.
FIG. 2 is a flowchart showing an embodiment of a micro defect review method of the present invention.
FIG. 3 is a diagram showing an example of a display screen of the display device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Wafer 2 ... Chip 3 ... Defect 10 ... Stage apparatus 100 ... Dark field system optical apparatus 200 ... Bright field system optical apparatus 300 ... Image processing apparatus 310 ... Dark field image creation apparatus 320 ... Bright field image creation apparatus 330 ... Defect detection Device 340 ... Display control device 350 ... Display device

Claims (1)

明視野照明下で検出した反射光から被検査物の表面の明視野画像を作成する明視野画像作成手段と、
暗視野照明下で検出した散乱光から被検査物の表面の欠陥を検出する欠陥検出手段と、
前記散乱光から被検査物の表面の暗視野画像を作成する暗視野画像作成手段と、
前記明視野画像及び前記暗視野画像を表示する表示手段と、
前記欠陥検出手段で検出した欠陥の存在をマークで表示することにより通知するマップ画面及び前記明視野画像作成手段で作成した被検査物の明視野画像を前記表示手段に同時に表示する機能を備えるとともに、前記暗視野画像及び前記明視野画像を前記表示手段に同時に表示するように制御する表示制御手段とを備えたことを特徴とする欠陥検査装置。A bright field image creating means for creating a bright field image of the surface of the object to be inspected from the reflected light detected under bright field illumination;
Defect detection means for detecting defects on the surface of the inspection object from the scattered light detected under dark field illumination,
Dark field image creating means for creating a dark field image of the surface of the inspection object from the scattered light;
Display means for displaying the bright field image and the dark field image;
A map screen for notifying by displaying the presence of a defect detected by the defect detection means by a mark and a function for simultaneously displaying the bright field image of the inspection object created by the bright field image creation means on the display means And a display control means for controlling the dark field image and the bright field image to be simultaneously displayed on the display means.
JP37195799A 1999-12-27 1999-12-27 Defect inspection equipment Expired - Fee Related JP4414533B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37195799A JP4414533B2 (en) 1999-12-27 1999-12-27 Defect inspection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37195799A JP4414533B2 (en) 1999-12-27 1999-12-27 Defect inspection equipment

Publications (2)

Publication Number Publication Date
JP2001183301A JP2001183301A (en) 2001-07-06
JP4414533B2 true JP4414533B2 (en) 2010-02-10

Family

ID=18499601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37195799A Expired - Fee Related JP4414533B2 (en) 1999-12-27 1999-12-27 Defect inspection equipment

Country Status (1)

Country Link
JP (1) JP4414533B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107796825A (en) * 2016-09-01 2018-03-13 宁波舜宇光电信息有限公司 Device inspection method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030210262A1 (en) * 2002-05-10 2003-11-13 Tripath Imaging, Inc. Video microscopy system and multi-view virtual slide viewer capable of simultaneously acquiring and displaying various digital views of an area of interest located on a microscopic slide
JP4723399B2 (en) * 2006-02-23 2011-07-13 株式会社日立ハイテクノロジーズ Inspection method and inspection apparatus
SG164292A1 (en) * 2009-01-13 2010-09-29 Semiconductor Technologies & Instruments Pte System and method for inspecting a wafer
JP5202462B2 (en) * 2009-07-23 2013-06-05 株式会社日立ハイテクノロジーズ Pattern defect inspection apparatus and method
KR101344817B1 (en) * 2013-07-30 2013-12-26 에이티아이 주식회사 Apparatus for reticle having function for inspecting pellicle frame
US9506873B2 (en) * 2014-04-15 2016-11-29 Kla-Tencor Corp. Pattern suppression in logic for wafer inspection
KR102350549B1 (en) * 2014-12-05 2022-01-14 세메스 주식회사 Apparatus for inspecting defects of a substrate
JP6654805B2 (en) * 2015-03-12 2020-02-26 日東電工株式会社 Manufacturing method and inspection method of printed circuit board
CN113984790B (en) * 2021-09-28 2024-08-30 歌尔光学科技有限公司 Lens quality detection method and device
CN117470847A (en) * 2023-08-28 2024-01-30 哈尔滨工业大学 Dark field confocal microscopic image reflection information decoupling method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107796825A (en) * 2016-09-01 2018-03-13 宁波舜宇光电信息有限公司 Device inspection method
CN107796825B (en) * 2016-09-01 2021-01-05 宁波舜宇光电信息有限公司 Device detection method

Also Published As

Publication number Publication date
JP2001183301A (en) 2001-07-06

Similar Documents

Publication Publication Date Title
JP4183492B2 (en) Defect inspection apparatus and defect inspection method
US8094295B2 (en) Inspection method and inspection apparatus
JP2005283190A (en) Foreign matter inspection method and device therefor
JP5416600B2 (en) Defect inspection apparatus and method
JP4414533B2 (en) Defect inspection equipment
KR20100056545A (en) Apparatus and method for detecting semiconductor substrate anomalies
JPWO2007132925A1 (en) Surface inspection device
KR101146081B1 (en) Detection of macro-defects using micro-inspection inputs
JP4583155B2 (en) Defect inspection method and system, and photomask manufacturing method
KR20120092181A (en) Defect inspection method and device thereof
JP2017138246A (en) Inspection device, inspection method, and image sensor
JP2006292412A (en) Surface inspection system, surface inspection method and substrate manufacturing method
JP4021084B2 (en) Electron microscope and inspection method
JP2007163259A (en) Difference comparison inspection method and difference comparison inspection device
JP2003057193A (en) Foreign matter checking apparatus
JP2021015035A (en) Image inspection method and image inspection device for image display device
JPS6221046A (en) Defect inspection for shadow mask
JPH06305110A (en) Apparatus and method for testing blinding of printing screen
JP2007147376A (en) Inspection device
JP2701872B2 (en) Surface inspection system
JP2006208281A (en) Periodic pattern irregularity inspection device, and periodic pattern imaging method
JP5372618B2 (en) Patterned substrate inspection apparatus and patterned substrate inspection method
JPH01255073A (en) Method and device for checking pattern
JP2006074065A (en) Inspection device of sample
JP2008002934A (en) Visual inspection device and visual inspection method

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040907

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060323

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060323

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080819

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080902

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081031

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090512

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090810

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090820

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091027

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091120

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131127

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees