JP3782411B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP3782411B2
JP3782411B2 JP2003306748A JP2003306748A JP3782411B2 JP 3782411 B2 JP3782411 B2 JP 3782411B2 JP 2003306748 A JP2003306748 A JP 2003306748A JP 2003306748 A JP2003306748 A JP 2003306748A JP 3782411 B2 JP3782411 B2 JP 3782411B2
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light emitting
emitting device
light
support substrate
translucent film
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JP2004172578A (en
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正昭 油利
大助 上田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Description

本発明は、例えば半導体装置、照明装置、表示装置等に利用可能な発光ダイオード、面発光レーザ等の半導体発光素子の実装技術に関するものである。   The present invention relates to a mounting technique of a semiconductor light emitting element such as a light emitting diode or a surface emitting laser that can be used for a semiconductor device, a lighting device, a display device, or the like.

近年、半導体技術の進展により、青色から紫外の短波長域で発光する発光ダイオードや面発光レーザが実現されるようになった。これらを用いて、蛍光体を励起した白色光源の開発が盛んに行われている。例えば、青色発光ダイオードの上に黄色に発光する蛍光体を塗布することにより、白色光を得ることがでる。それにより、各種表示や照明用として実用化が始まっている。また、光源として３００〜４００ｎｍの紫外域発光ダイオードを用い、これによって赤、緑、青の３原色蛍光体を励起することにより、より自然な白色を得る試みもなされている。これら、発光ダイオードと蛍光体による発光装置の実装形態に関しては、さまざまな方法が提案されている（例えば、特許文献１、特許文献２等）。   In recent years, with the progress of semiconductor technology, light emitting diodes and surface emitting lasers that emit light in the short wavelength range from blue to ultraviolet have been realized. The development of white light sources using these to excite phosphors has been actively conducted. For example, white light can be obtained by applying a phosphor emitting yellow light on a blue light emitting diode. As a result, practical use has started for various displays and lighting. In addition, an attempt has been made to obtain a more natural white color by using a 300 to 400 nm ultraviolet light emitting diode as a light source, thereby exciting the three primary color phosphors of red, green and blue. Various methods have been proposed for mounting the light emitting device using the light emitting diode and the phosphor (for example, Patent Document 1, Patent Document 2, etc.).

以下、図面を参照しながら、上述のような発光ダイオードと蛍光体を組み合わせた、従来例の白色発光装置の構成について説明する。   Hereinafter, a configuration of a conventional white light emitting device in which the above-described light emitting diode and phosphor are combined will be described with reference to the drawings.

図８は従来の白色発光装置の構成の一例を示す断面図である。絶縁膜２１を挟んでパターン電極２２が表面に形成された支持基板１の上に、青色発光ダイオード２が銀ペースト３により実装されている。発光ダイオード２の表面には端子電極が形成されており、この端子電極と支持基板１上のパターン電極２２とが金ワイヤ２３によって電気的に接続されている。また、蛍光体を含有した封止材２４が、発光ダイオード２を覆うように形成されている。   FIG. 8 is a cross-sectional view showing an example of the configuration of a conventional white light emitting device. A blue light emitting diode 2 is mounted with a silver paste 3 on a support substrate 1 on which a pattern electrode 22 is formed on the surface with an insulating film 21 interposed therebetween. A terminal electrode is formed on the surface of the light emitting diode 2, and the terminal electrode and the pattern electrode 22 on the support substrate 1 are electrically connected by a gold wire 23. In addition, a sealing material 24 containing a phosphor is formed so as to cover the light emitting diode 2.

パターン電極２２を介して発光ダイオード２に電力を供給すると、発光ダイオード２は青色に発光する。その光の一部は封止材２４の中の蛍光体によって吸収され、これによって蛍光体は黄色に発光する。蛍光体による黄色の発光と、封止材２４を透過して出てきた青色光の一部とが混ざり合い、白色の光源が得られる。
特開平１１−２９８０４８号公報 特開２００２−７６４４４号公報 When power is supplied to the light emitting diode 2 via the pattern electrode 22, the light emitting diode 2 emits blue light. A part of the light is absorbed by the phosphor in the sealing material 24, whereby the phosphor emits yellow light. The yellow light emitted by the phosphor and a part of the blue light that has been transmitted through the sealing material 24 are mixed to obtain a white light source.
Japanese Patent Laid-Open No. 11-298048 JP 2002-76444 A

しかしながら、この構成では以下に述べるような課題があった。すなわち、この構成では、金ワイヤ２３を形成するワイヤボンディング工程が必要であった。しかもワイヤボンディング時に、発光ダイオード２に過剰な応力がかかり劣化を招くことがあった。また、従来の構成では、ワイヤボンディング工程の後に封止材２４を形成する工程が必要であり、製造コストがかかるという問題があった。   However, this configuration has the following problems. That is, in this configuration, a wire bonding step for forming the gold wire 23 is necessary. In addition, excessive stress may be applied to the light emitting diode 2 during wire bonding, leading to deterioration. In addition, the conventional configuration requires a step of forming the sealing material 24 after the wire bonding step, and there is a problem that the manufacturing cost is high.

さらに、封止材２４が硬化する際の応力により、金ワイヤ２３が端子電極あるいはパターン電極２２から外れるという不良を生じることがあった。これらの課題は特に、多数個の発光ダイオードをアレイ状に並べた構成の発光装置において、歩留を低下させる大きな要因であった。また、従来の構成では、金ワイヤ２３の存在により装置の厚みを薄くすることが困難であるという課題もあった。   Furthermore, a failure that the gold wire 23 is detached from the terminal electrode or the pattern electrode 22 may occur due to stress when the sealing material 24 is cured. In particular, these problems are a major factor for reducing the yield in a light-emitting device having a configuration in which a large number of light-emitting diodes are arranged in an array. Further, the conventional configuration has a problem that it is difficult to reduce the thickness of the apparatus due to the presence of the gold wire 23.

上記課題に鑑み、本発明は、ワイヤボンディング工程や、蛍光体を含有した封止材を形成する工程を不要とし、歩留よく安価に製造可能な薄型の発光装置を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a thin light-emitting device that does not require a wire bonding step and a step of forming a phosphor-containing sealing material and can be manufactured at a low cost with a high yield. .

上記課題を解決するために、本発明の発光装置は、支持基板と、前記支持基板の上に搭載された半導体発光素子と、前記半導体発光素子を覆うように前記支持基板に固定された透光性のフィルムと、前記透光性フィルムの上面に形成されたパターン電極と、前記透光性フィルムを貫通して形成されたスルーホールとを有し、前記パターン電極と前記半導体発光素子の端子電極とが前記スルーホールを介して導通している。
In order to solve the above-described problems, a light-emitting device of the present invention includes a support substrate, a semiconductor light-emitting element mounted on the support substrate, and a light-transmitting light fixed to the support substrate so as to cover the semiconductor light-emitting element. A transparent film, a pattern electrode formed on an upper surface of the translucent film, and a through hole formed through the translucent film , the pattern electrode and a terminal electrode of the semiconductor light emitting element Are conducted through the through hole .

上記構成の発光装置によれば、製造工程において、半導体発光素子とパターン電極を接続するためのワイヤボンディング工程や、封止材により封止する工程を不要とし、歩留よく安価に薄型の発光装置を製造することができる。   According to the light emitting device having the above-described configuration, a thin light emitting device with a high yield and a low cost can be obtained without a wire bonding step for connecting the semiconductor light emitting element and the pattern electrode and a step of sealing with a sealing material in the manufacturing process. Can be manufactured.

本発明の発光装置において好ましくは、透光性フィルムは、半導体発光素子から発せられた光によって励起される蛍光体を含有する。それにより、蛍光体を含有した封止材を形成する工程が省略され、安価に発光装置を製造することができる。   In the light emitting device of the present invention, preferably, the translucent film contains a phosphor that is excited by light emitted from the semiconductor light emitting element. Thereby, the process of forming the sealing material containing the phosphor is omitted, and the light emitting device can be manufactured at low cost.

また好ましくは、透光性フィルムの少なくとも一方の面に、半導体発光素子から発せられた光によって励起される蛍光体を含む蛍光体膜が形成される。それにより、蛍光体を含有した封止材を形成する工程が省略され、安価に発光装置を製造することができる。しかも透光性フィルムに多量の蛍光体を含有させた場合に生じる強度の劣化を防ぐことができ、また、任意量の蛍光体を使用することができる。さらに好ましくは、蛍光体膜が透光性フィルムの半導体発光素子側の表面に形成される。それにより、特に、発光ダイオードの発光波長が紫外域であるとき、発光ダイオードからの光が透光性フィルムを通過する前に蛍光体によって可視光に変換されるので、透光性フィルムの吸収による光の損失を低減させて、発光効率を高めることができる。   Preferably, a phosphor film containing a phosphor excited by light emitted from the semiconductor light emitting element is formed on at least one surface of the translucent film. Thereby, the process of forming the sealing material containing the phosphor is omitted, and the light emitting device can be manufactured at low cost. In addition, it is possible to prevent deterioration in strength that occurs when a large amount of phosphor is contained in the translucent film, and an arbitrary amount of phosphor can be used. More preferably, the phosphor film is formed on the surface of the translucent film on the semiconductor light emitting element side. Thereby, especially when the emission wavelength of the light emitting diode is in the ultraviolet region, the light from the light emitting diode is converted into visible light by the phosphor before passing through the light transmitting film. Light loss can be reduced and luminous efficiency can be increased.

また好ましくは、支持基板が凹部を有し、半導体発光素子が凹部内に搭載される。それにより、透光性フィルムの曲がりが少なくなり、歩留よく発光装置を製造することができる。凹部の側壁面は、底部から透光性フィルムに向かって広がるように形成されることが好ましい。それにより、発光素子の側面から出射された光が、凹部の側壁斜面によって反射され透光性フィルムの方向に導かれるので、光の取り出し効率が向上し、発光効率を高めることができる。凹部の側壁面が支持基板の上面に対してなす角度は、３０°〜６０°の範囲とすることが好ましい。   Preferably, the support substrate has a recess, and the semiconductor light emitting element is mounted in the recess. As a result, the light-transmitting film is less bent and a light-emitting device can be manufactured with high yield. The side wall surface of the recess is preferably formed so as to spread from the bottom toward the translucent film. Thereby, the light emitted from the side surface of the light emitting element is reflected by the side wall slope of the recess and guided in the direction of the translucent film, so that the light extraction efficiency is improved and the light emission efficiency can be increased. The angle formed by the side wall surface of the recess with respect to the upper surface of the support substrate is preferably in the range of 30 ° to 60 °.

上記構成の発光装置において、半導体発光素子の少なくともひとつの端子電極が、支持基板または支持基板上に形成された電極に導通している構成とすることができる。それにより、発光ダイオードと透光性フィルム上の電極との接続は１箇所で済むので、透光性フィルム上の電極による光の遮りを最小限にして、発光効率を高めることができる。   In the light-emitting device having the above structure, at least one terminal electrode of the semiconductor light-emitting element can be electrically connected to the support substrate or the electrode formed on the support substrate. Thereby, since the connection between the light-emitting diode and the electrode on the light-transmitting film only needs to be performed at one place, light blocking by the electrode on the light-transmitting film can be minimized and the light emission efficiency can be increased.

また上記構成の発光装置は、支持基板の上に、複数の半導体発光素子がアレイ状に実装された構成とすることが可能である。それにより、大出力の発光装置を容易に構成することができる。   The light-emitting device having the above structure can have a structure in which a plurality of semiconductor light-emitting elements are mounted in an array on a support substrate. Thereby, a high-power light-emitting device can be easily configured.

また上記構成の発光装置において、透光性フィルムを支持基板に接着剤によって固着することができる。それにより、透光性フィルムを強固に固定できると共に、発光ダイオードが外気と遮断され水分等の混入を最小限に防ぐことができるので、発光ダイオードの信頼性を高めることができる。好ましくは、接着剤は、半導体発光素子から発せられた光によって励起される蛍光体を含有する。それにより、発光ダイオードの側面から出射し洩れてきた光も蛍光体によって可視光に変換できるので、発光効率を高めることができる。   In the light-emitting device having the above structure, the light-transmitting film can be fixed to the supporting substrate with an adhesive. Accordingly, the translucent film can be firmly fixed, and the light emitting diode can be blocked from outside air to prevent entry of moisture and the like, so that the reliability of the light emitting diode can be improved. Preferably, the adhesive contains a phosphor that is excited by light emitted from the semiconductor light emitting device. Thereby, since the light emitted from the side surface of the light emitting diode and leaked can be converted into visible light by the phosphor, the light emission efficiency can be increased.

上記構成の発光装置において、支持基板を金属で構成することができる。それにより、発光ダイオードの放熱特性が格段に向上し、動作可能な最高温度の向上や信頼性の向上を図ることができる。   In the light emitting device having the above structure, the supporting substrate can be made of metal. As a result, the heat dissipation characteristics of the light-emitting diode are remarkably improved, and the maximum operable temperature and the reliability can be improved.

また、上記構成の発光装置において好ましくは、支持基板と透光性フィルムとで囲まれた空間に、樹脂を封入する。それにより、樹脂が硬化収縮する際に、透光性フィルムを支持基板側に吸い寄せるので、実装状態が強固になり、信頼性の高い発光装置を実現することができる。さらに好ましくは、空間に封入された樹脂が、半導体発光素子から発せられた光によって励起される蛍光体を含有する。それにより、発光ダイオードの側面から出射した光も蛍光体によって可視光に変換して、発光効率を高めることができる。また好ましくは、前記空間に封入された樹脂の屈折率が、前記半導体発光素子の発光部の屈折率よりも小さく、前記透光性フィルムの屈折率よりも大きい値に設定する。それにより、発光ダイオードからの光の取り出し効率が向上して、発光効率を高めることができる。   In the light emitting device having the above structure, the resin is preferably sealed in a space surrounded by the support substrate and the translucent film. Accordingly, when the resin is cured and contracted, the translucent film is sucked toward the support substrate, so that the mounting state is strengthened and a highly reliable light-emitting device can be realized. More preferably, the resin sealed in the space contains a phosphor excited by light emitted from the semiconductor light emitting element. Thereby, the light emitted from the side surface of the light emitting diode can also be converted into visible light by the phosphor, and the luminous efficiency can be increased. Preferably, the refractive index of the resin sealed in the space is set to a value smaller than the refractive index of the light emitting part of the semiconductor light emitting element and larger than the refractive index of the translucent film. Thereby, the light extraction efficiency from the light emitting diode is improved, and the light emission efficiency can be increased.

本発明の他の構成の発光装置は、支持基板と、支持基板の上に搭載された半導体発光素子と、半導体発光素子を覆うように支持基板に固定された透光性のフィルムと、透光性フィルムの上面に形成されたパターン電極とを有し、パターン電極と半導体発光素子の端子電極とが導通し、支持基板と透光性フィルムとで囲まれた空間に、大気圧よりも低い圧力で気体が封入されている。それにより、透光性フィルムが支持基板側に吸い寄せられるので、実装状態が強固になり、信頼性の高い発光装置を実現することができる。

 A light emitting device of another configuration of the present invention includes a support substrate, a semiconductor light emitting element mounted on the support substrate, a translucent film fixed to the support substrate so as to cover the semiconductor light emitting element, A pressure lower than the atmospheric pressure in a space surrounded by the support substrate and the translucent film. The gas is sealed . Accordingly, the translucent film is attracted to the support substrate side, so that the mounting state is strengthened and a highly reliable light-emitting device can be realized.

また、上記構成の発光装置において好ましくは、支持基板と透光性フィルムとで囲まれた空間に、窒素、アルゴン、ヘリウム、あるいはこれらの混合ガス等の不活性ガスを封入する。それにより、特に、発光ダイオードが紫外域で発光する場合、大気中の酸素や水分の存在により発光ダイオードの電極が劣化することを防止することができ、高信頼性の発光装置を実現することができる。   In the light-emitting device having the above structure, an inert gas such as nitrogen, argon, helium, or a mixed gas thereof is preferably sealed in a space surrounded by the support substrate and the light-transmitting film. As a result, particularly when the light emitting diode emits light in the ultraviolet region, it is possible to prevent deterioration of the electrode of the light emitting diode due to the presence of oxygen or moisture in the atmosphere, and to realize a highly reliable light emitting device. it can.

以下に、本発明の各実施の形態における発光装置について、図面を参照して具体的に説明する。   Hereinafter, the light emitting device in each embodiment of the present invention will be specifically described with reference to the drawings.

（実施の形態１）
図１Ａは、本発明の実施の形態１に係る発光装置を示す断面図、図１Ｂはその平面図である。支持基板１の上に、青色に発光するＩｎＧａＮ系発光ダイオード２が、銀ペースト３によって固着されている。発光ダイオード２の上部を覆って、青色光に対して透光性の樹脂からなる透光性フィルム５が配置され、接着剤６によって支持基板１に固定されている。透光性フィルム５の表面には、パターン化されたパターン電極７が形成されている。パターン電極７は、発光ダイオード２の直上で、スルーホール８を介して透光性フィルム５の反対側の面に伸び、金バンプ９によって発光ダイオード２の端子電極４と電気的に接続されている。透光性フィルム５には、得ようとする白色光の水準に応じて、蛍光粉末顔料が一定の比率で混入されている。 (Embodiment 1)
FIG. 1A is a cross-sectional view showing the light-emitting device according to Embodiment 1 of the present invention, and FIG. 1B is a plan view thereof. An InGaN-based light emitting diode 2 that emits blue light is fixed on a support substrate 1 with a silver paste 3. Covering the upper part of the light emitting diode 2, a translucent film 5 made of a resin translucent to blue light is disposed and fixed to the support substrate 1 with an adhesive 6. A patterned pattern electrode 7 is formed on the surface of the translucent film 5. The pattern electrode 7 extends to the opposite surface of the translucent film 5 through the through hole 8 immediately above the light emitting diode 2, and is electrically connected to the terminal electrode 4 of the light emitting diode 2 by the gold bump 9. . The translucent film 5 is mixed with a fluorescent powder pigment at a certain ratio according to the level of white light to be obtained.

このような構成により、ワイヤボンディング工程が不要となり、極めて能率よく実装ができる。また、ワイヤボンディングに起因するワイヤ剥がれや、歪による発光ダイオードの劣化による、歩留の低下を抑制することができる。また、蛍光体を塗布する工程が不要となるので、工程数も減り、安価に歩留よく発光装置を製造することができる。さらに、ワイヤが不要であるため、全体の厚みを薄くすることができる。   With such a configuration, a wire bonding step is not required and mounting can be performed extremely efficiently. In addition, it is possible to suppress a decrease in yield due to wire peeling caused by wire bonding or deterioration of the light emitting diode due to strain. Further, since the step of applying the phosphor is not necessary, the number of steps is reduced, and the light emitting device can be manufactured at a low cost and with a high yield. Furthermore, since no wire is required, the overall thickness can be reduced.

透光性フィルム５は、支持基板１との間に発光ダイオード２を挟んで固定されるので、発光ダイオード２に対応する部分が多少変形するが、発光ダイオード２の厚さは極めて小さいので、実質的に構造上の支障はない。   Since the light-transmitting film 5 is fixed with the light-emitting diode 2 sandwiched between the light-emitting diode 2 and the support substrate 1, the portion corresponding to the light-emitting diode 2 is slightly deformed, but the thickness of the light-emitting diode 2 is extremely small. There is no structural problem.

発光ダイオード２は、上記の例に限らず、目的に応じて種々選択可能である。透光性フィルム５の材質としては、例えば、ポリメタクリル酸メチル、ポリ塩化ビニリデン、ポリエステル、ポリビニルアルコール、１軸延伸ポリエステル、無軸ポリエステル、ポリアリレート、ポリエーテルサルホン、ポリカーボネート、環状非晶質ポリオレフィン、ポリイミド、その他のファインプラスチック材料等を用いることができる。透光性フィルム５に混入する蛍光粉末顔料は、発光ダイオード２との組み合わせで適宜選択することができる。赤色蛍光体としては、例えば、（Ｙ、Ｇｄ）ＢＯ3：Ｅｕ、Ｙ2Ｏ3：Ｅｕ等を用いることができる。緑色蛍光体としては、例えば、Ｚｎ2ＳｉＯ4：Ｍｎ、ＢａＡｌ12Ｏ19：Ｍｎ等を用いることができる。青色蛍光体としては、例えば、ＢａＭｇＡｌ14Ｏ23：Ｅｕ等を用いることができる。 The light emitting diode 2 is not limited to the above example, but can be variously selected according to the purpose. Examples of the material of the translucent film 5 include polymethyl methacrylate, polyvinylidene chloride, polyester, polyvinyl alcohol, uniaxially stretched polyester, unaxial polyester, polyarylate, polyethersulfone, polycarbonate, and cyclic amorphous polyolefin. Polyimide, other fine plastic materials, etc. can be used. The fluorescent powder pigment mixed in the translucent film 5 can be selected as appropriate in combination with the light emitting diode 2. As the red phosphor, for example, (Y, Gd) BO 3 : Eu, Y 2 O 3 : Eu, or the like can be used. As the green phosphor, for example, Zn 2 SiO 4 : Mn, BaAl 12 O 19 : Mn, or the like can be used. For example, BaMgAl 14 O 23 : Eu can be used as the blue phosphor.

（実施の形態２）
図２は、本発明の実施の形態２に係る発光装置を示す断面図である。実施の形態１の発光装置との相違点は、透光性フィルム５ａには蛍光体顔料を含有せず、透光性フィルム５ａの表面に、蛍光体膜１０が薄膜状に形成されている点である。 (Embodiment 2)
FIG. 2 is a cross-sectional view showing a light emitting device according to Embodiment 2 of the present invention. The difference from the light emitting device of Embodiment 1 is that the light-transmitting film 5a does not contain a phosphor pigment, and the phosphor film 10 is formed in a thin film on the surface of the light-transmitting film 5a. It is.

このような構成により、透光性フィルム５ａに多量の蛍光体を含有させた場合に生じる透光性フィルム５ａの強度の劣化を防ぐことができる。また、任意量の蛍光体を使用することができる。   With such a configuration, it is possible to prevent deterioration of the strength of the translucent film 5a that occurs when the translucent film 5a contains a large amount of phosphor. Also, any amount of phosphor can be used.

蛍光体膜１０は、透光性フィルム５ａの上面に設けることも可能であるが、図２に示したように、透光性フィルム５ａの下面、すなわち透光性フィルム５ａの発光ダイオード２側の表面に設けた場合は、次のような利点がある。すなわち、発光ダイオード２から出た光をまず蛍光体膜１０により、発光ダイオード２の発光ピークよりも長波長側の可視光に変換するように構成することができる。それにより、透光性フィルム５ａによる光の吸収損失が低減でき、発光効率を高めることができる。また、発光ダイオード２の発光スペクトルが紫外域にあるときには、紫外光による透光性フィルム５ａの経時劣化を抑制することができ、高信頼性の発光装置を実現することができる。   The phosphor film 10 can be provided on the upper surface of the translucent film 5a. However, as shown in FIG. 2, the lower surface of the translucent film 5a, that is, the light-emitting diode 2 side of the translucent film 5a. When provided on the surface, there are the following advantages. That is, the light emitted from the light emitting diode 2 can be converted into visible light having a wavelength longer than the light emission peak of the light emitting diode 2 by the phosphor film 10. Thereby, the absorption loss of the light by the translucent film 5a can be reduced, and luminous efficiency can be improved. Further, when the light emission spectrum of the light emitting diode 2 is in the ultraviolet region, it is possible to suppress deterioration over time of the translucent film 5a due to ultraviolet light, and a highly reliable light emitting device can be realized.

蛍光体膜１０の形成には、薄膜形成技術あるいは塗布等、どのような成膜方法を用いてもよい。   For the formation of the phosphor film 10, any film forming method such as a thin film forming technique or coating may be used.

（実施の形態３）
図３は、本発明の実施の形態３に係る発光装置を示す断面図である。実施の形態１との相違点は、支持基板１に凹部１１が形成され、凹部１１の底面に発光ダイオード２が実装されている点である。例えば、支持基板１としてアルミニウムを用い、プレス加工により、１辺が約１ｍｍ、深さが発光ダイオード２の厚みと同程度の１００μｍの凹部１１を形成した構成とすることができる。 (Embodiment 3)
FIG. 3 is a cross-sectional view showing a light-emitting device according to Embodiment 3 of the present invention. The difference from the first embodiment is that a recess 11 is formed in the support substrate 1 and the light emitting diode 2 is mounted on the bottom surface of the recess 11. For example, aluminum can be used as the support substrate 1 and a recess 11 having a side of about 1 mm and a depth that is about the same as the thickness of the light-emitting diode 2 can be formed by pressing.

このような構成により、発光ダイオード２から側方に出射された光を、凹部１１の側壁面により反射させて、透光性フィルム５の側に効果的に導くことができる。それにより、発光効率の高い発光装置を実現することができる。光の取り出し効率の観点からは、凹部１１の側壁が、図３に示すように底部から透光性フィルム５に向かって開いた形状であることが望ましい。支持基板１の上面に対して凹部１１の側壁面がなす角度θは、３０°〜６０°が適当である。さらに、凹部１１の側壁面に反射膜を設ければ、光の取り出し効率を、より高めることが可能である。   With such a configuration, the light emitted from the light emitting diode 2 to the side can be reflected by the side wall surface of the recess 11 and effectively guided to the translucent film 5 side. Thereby, a light emitting device with high luminous efficiency can be realized. From the viewpoint of light extraction efficiency, it is desirable that the side wall of the recess 11 has a shape that opens from the bottom toward the translucent film 5 as shown in FIG. The angle θ formed by the side wall surface of the recess 11 with respect to the upper surface of the support substrate 1 is suitably 30 ° to 60 °. Furthermore, if a reflective film is provided on the side wall surface of the recess 11, the light extraction efficiency can be further increased.

また、このような構成により、透光性フィルム５の曲げを最小限にしてほぼ平坦に固着することができる。それにより、曲げに伴う透光性フィルム５内の局所的な過剰応力による透光性フィルム５の劣化や、パターン電極７の剥がれを回避することが可能となる。   Further, with such a configuration, the translucent film 5 can be fixed almost flatly with minimal bending. Thereby, it becomes possible to avoid the deterioration of the translucent film 5 and the peeling of the pattern electrode 7 due to local excessive stress in the translucent film 5 due to bending.

（実施の形態４）
図４は、本発明の実施の形態４に係る発光装置を示す断面図である。本実施の形態は、実施の形態３の構成に実施の形態２の着想を適用した例である。すなわち、実施の形態３との相違点は、透光性フィルム５ａには蛍光体顔料を含有せず、透光性フィルム５ａの表面に蛍光体膜１０が薄膜状に形成されている点である。 (Embodiment 4)
FIG. 4 is a cross-sectional view showing a light emitting device according to Embodiment 4 of the present invention. The present embodiment is an example in which the idea of the second embodiment is applied to the configuration of the third embodiment. That is, the difference from Embodiment 3 is that the light-transmitting film 5a does not contain a phosphor pigment, and the phosphor film 10 is formed in a thin film on the surface of the light-transmitting film 5a. .

このような構成により、実施の形態２において述べたように、透光性フィルム５ａに多量の蛍光体を含有させた場合に生じる透光性フィルム５ａの強度の劣化を防ぐことができ、任意量の蛍光体を使用することができる。蛍光体膜１０を透光性フィルム５ａの下面に設ける場合の利点も、実施の形態２の場合と同様である。   With such a configuration, as described in the second embodiment, it is possible to prevent deterioration of the strength of the translucent film 5a that occurs when the translucent film 5a contains a large amount of phosphor. The phosphors can be used. The advantage of providing the phosphor film 10 on the lower surface of the translucent film 5a is the same as that of the second embodiment.

（実施の形態５）
図５は、本発明の実施の形態５に係る発光装置を示す断面図である。支持基板１はアルミニウム製であり、実施の形態３、４と同様に、プレス加工により形成した凹部１１を有する。 (Embodiment 5)
FIG. 5 is a cross-sectional view showing a light-emitting device according to Embodiment 5 of the present invention. Support substrate 1 is made of aluminum, and has recesses 11 formed by pressing, as in the third and fourth embodiments.

実施の形態３との相違点は、発光ダイオード２の２つの端子電極が、発光ダイオード２の上下両面に形成され、一方の端子電極４ａは支持基板１に接続され、他方の端子電極４ｂは透光性フィルム５上のパターン電極７に接続されている点である。   The difference from the third embodiment is that two terminal electrodes of the light emitting diode 2 are formed on the upper and lower surfaces of the light emitting diode 2, one terminal electrode 4a is connected to the support substrate 1, and the other terminal electrode 4b is transparent. It is a point connected to the pattern electrode 7 on the optical film 5.

このような構成により、パターン電極７と発光ダイオード２の電気的接続が１箇所のみになる。それにより、実装歩留を向上させることができると共に、パターン電極７によって光が遮られる面積が半減するので、より効率の高い発光装置を実現することができる。   With such a configuration, there is only one electrical connection between the pattern electrode 7 and the light emitting diode 2. Accordingly, the mounting yield can be improved and the area where light is blocked by the pattern electrode 7 is halved, so that a more efficient light emitting device can be realized.

上述の発光装置は、支持基板１として導電性金属であるアルミニウムを用いることにより、端子電極４ａとの電気的な接続を可能とした例であるが、これに限定されるものではない。例えば、パターン電極を形成した絶縁性基板を用いて、端子電極４ａと電気的に接続してもよい。   The light emitting device described above is an example in which electrical connection with the terminal electrode 4a is made possible by using aluminum, which is a conductive metal, as the support substrate 1. However, the present invention is not limited to this. For example, you may electrically connect with the terminal electrode 4a using the insulating substrate in which the pattern electrode was formed.

端子電極４ａを支持基板１または支持基板１に設けられた電極と接続するためには、端子電極４ａを発光ダイオード２の下面に配置することは必須ではない。端子電極４ａを上面に設けた場合であっても、スルーホール等を介して支持基板１等と接続することは可能である。   In order to connect the terminal electrode 4 a to the support substrate 1 or the electrode provided on the support substrate 1, it is not essential to arrange the terminal electrode 4 a on the lower surface of the light emitting diode 2. Even when the terminal electrode 4a is provided on the upper surface, it can be connected to the support substrate 1 or the like through a through hole or the like.

また、上述の発光装置は、支持基板１に凹部１１を設けた構成の例であるが、これに限定されるものではない。実施の形態１と同様に平坦な支持基板を用いた場合であっても、本実施の形態の特徴である構成を適用して同様の効果を得ることは可能である。   Moreover, although the above-mentioned light-emitting device is an example of the structure which provided the recessed part 11 in the support substrate 1, it is not limited to this. Even in the case where a flat support substrate is used as in the first embodiment, it is possible to obtain the same effect by applying the structure which is a feature of this embodiment.

また、蛍光体顔料を含有した透光性フィルム５ではなく、実施の形態２と同様に、表面に蛍光体膜１０を形成した透光性フィルム５ａを用いた場合でも、本実施の形態を適用して同様の効果を得ることが可能である。   Further, the present embodiment is applied even when the translucent film 5a having the phosphor film 10 formed on the surface thereof is used in the same manner as in the second embodiment, instead of the translucent film 5 containing the phosphor pigment. Thus, the same effect can be obtained.

（実施の形態６）
図６Ａは、本発明の実施の形態６に係る発光装置を示す断面図、図６Ｂは、その平面図である。支持基板１は、例えばアルミニウム製で導電性を有し、プレス加工により凹部１１がアレイ状に形成されている。アレイを構成する個々の発光部の構成は、実施の形態５の場合と同様である。 (Embodiment 6)
6A is a sectional view showing a light emitting device according to Embodiment 6 of the present invention, and FIG. 6B is a plan view thereof. The support substrate 1 is made of, for example, aluminum and has conductivity, and the recesses 11 are formed in an array by pressing. The configuration of the individual light emitting units constituting the array is the same as that in the fifth embodiment.

各発光ダイオード２の２つの端子電極のうち、発光ダイオード２の下面に形成された端子電極４ａは支持基板１に接続され、上面に形成された端子電極４ｂは透光性フィルム５上のパターン電極７に接続されている。   Of the two terminal electrodes of each light emitting diode 2, the terminal electrode 4 a formed on the lower surface of the light emitting diode 2 is connected to the support substrate 1, and the terminal electrode 4 b formed on the upper surface is a pattern electrode on the translucent film 5. 7 is connected.

このような構成により、蛍光灯や白熱電灯等の一般照明装置と置き換え可能な大電力の発光装置を実現することができる。しかも、発光ダイオード２の端子電極４ａおよび端子電極４ｂとの接続は、各々、支持基板１および透光性フィルム５上のパターン電極７との接続により一括して行われ、各発光ダイオード２ごとのワイヤボンディングや蛍光体塗布工程が不要である。それにより、製造コストを飛躍的に低減できる。   With such a configuration, a high-power light-emitting device that can be replaced with a general lighting device such as a fluorescent lamp or an incandescent lamp can be realized. In addition, the connection between the terminal electrode 4a and the terminal electrode 4b of the light emitting diode 2 is performed collectively by connection with the support substrate 1 and the pattern electrode 7 on the translucent film 5, respectively. Wire bonding and phosphor coating processes are not required. Thereby, the manufacturing cost can be drastically reduced.

以上の実施の形態１〜６で述べた構成において、支持基板１と透光性フィルム５により囲まれた発光ダイオード２の近傍の空間は、実用上の条件に応じて種々の雰囲気を適用可能である。例えば、大気圧の空気が封入されていてもよい。また、発光ダイオード２の近傍の空間に、大気圧よりも低い圧力、例えば１×１０3〜５×１０4Ｐａの範囲の圧力で気体を封入することもできる。それにより、透光性フィルム５が発光ダイオード２の上部で支持基板１の側に押さえつけられるので、透光性フィルム５の固着状態が安定し、長期信頼性を向上させることができる。また、封入する気体は、窒素、アルゴン、ヘリウム等の不活性ガスであることが望ましい。それにより、発光ダイオード２からの光の紫外成分によって、空気中の酸素や水分が発光ダイオードの電極や透光性フィルムの表面と反応を起こし、信頼性を低下させることを回避することができる。なお、窒素、アルゴン、ヘリウム等の不活性ガスを封入する場合、大気圧あるいはそれ以上の圧力であってもよい。 In the configurations described in the above first to sixth embodiments, various atmospheres can be applied to the space in the vicinity of the light emitting diode 2 surrounded by the support substrate 1 and the translucent film 5 according to practical conditions. is there. For example, air at atmospheric pressure may be enclosed. Moreover, gas can also be enclosed in the space in the vicinity of the light emitting diode 2 at a pressure lower than atmospheric pressure, for example, a pressure in the range of 1 × 10 3 to 5 × 10 4 Pa. Thereby, since the translucent film 5 is pressed on the support substrate 1 side at the upper part of the light emitting diode 2, the fixed state of the translucent film 5 is stabilized, and long-term reliability can be improved. The gas to be sealed is preferably an inert gas such as nitrogen, argon or helium. Thereby, it can be avoided that oxygen or moisture in the air reacts with the electrode of the light emitting diode or the surface of the light transmissive film due to the ultraviolet component of the light from the light emitting diode 2 to reduce the reliability. When an inert gas such as nitrogen, argon or helium is sealed, the pressure may be atmospheric pressure or higher.

（実施の形態７）
図７は、本発明の実施の形態７に係る発光装置を示す断面図である。実施の形態６との相違点は、発光ダイオード２の周囲の空間に樹脂１２が封入されている点である。樹脂１２を封入することにより、支持基板１に対する発光ダイオード２の固定が安定する。 (Embodiment 7)
FIG. 7 is a cross-sectional view showing a light-emitting device according to Embodiment 7 of the present invention. The difference from the sixth embodiment is that the resin 12 is sealed in the space around the light emitting diode 2. By encapsulating the resin 12, the fixing of the light emitting diode 2 to the support substrate 1 is stabilized.

樹脂１２は、その屈折率が、発光ダイオード２の発光層の屈折率と透光性フィルム５の屈折率の中間の値であることが望ましい。それにより、発光ダイオード２からの光の取り出し効率を高めることができる。屈折率の関係は、例えば、発光ダイオード：２．６、樹脂：２．０、透光性フィルム：１．６とすればよい。また、樹脂１２に、透光性フィルム５と同様に蛍光体顔料を含有させてもよい。それにより、白色への変換効率を一層高めることができるので、高効率の発光装置を実現することができる。   The refractive index of the resin 12 is desirably an intermediate value between the refractive index of the light emitting layer of the light emitting diode 2 and the refractive index of the translucent film 5. Thereby, the light extraction efficiency from the light emitting diode 2 can be increased. The relationship of the refractive index may be, for example, light emitting diode: 2.6, resin: 2.0, and translucent film: 1.6. Further, the phosphor 12 may be contained in the resin 12 in the same manner as the translucent film 5. Thereby, since the conversion efficiency to white can be further increased, a highly efficient light-emitting device can be realized.

なお、本実施の形態では、凹部１１を有する支持基板１の上に発光ダイオード２をアレイ状に配置した場合を示したが、これに限定されるものではない。例えば、実施の形態１〜５で示した構成において、発光ダイオード２の周囲の空間に樹脂を封入することにより、同様の効果を得ることができる。   In the present embodiment, the case where the light emitting diodes 2 are arranged in an array on the support substrate 1 having the recesses 11 is shown, but the present invention is not limited to this. For example, in the configuration shown in the first to fifth embodiments, the same effect can be obtained by encapsulating a resin in the space around the light emitting diode 2.

以上の実施の形態に関して、支持基板１の材質は特に限定されるものではないが、特に、アルミニウム、銅等の金属を用いることが望ましい。それにより、優れた放熱性を確保することができ、動作可能温度を高めたり、信頼性を高めたりすることができる。   In the above embodiment, the material of the support substrate 1 is not particularly limited, but it is particularly desirable to use a metal such as aluminum or copper. Thereby, excellent heat dissipation can be ensured, the operable temperature can be increased, and the reliability can be increased.

また、透光性フィルムの膜厚は特に限定されないが、機械的な安定性と実装時のフレキシブルさを両立させるために、約２５μｍ以上５００μｍ未満が望ましい。   The film thickness of the translucent film is not particularly limited, but is preferably about 25 μm or more and less than 500 μm in order to achieve both mechanical stability and flexibility during mounting.

また、透光性フィルム上の電極のパターンは、発光装置と外部駆動回路との接続の形態に応じて自由に設計可能である。但し、発光ダイオードおよび蛍光体からの光が透過する発光ダイオード直上およびその近傍では、光の遮りを最小限に抑えるためにできるだけ線幅を小さくする方がよい。線幅が１００μｍ未満であることが望ましい。   Moreover, the pattern of the electrode on the translucent film can be freely designed according to the connection form between the light emitting device and the external drive circuit. However, it is better to make the line width as small as possible in order to minimize light blockage directly above and in the vicinity of the light-emitting diode through which light from the light-emitting diode and the phosphor transmits. The line width is desirably less than 100 μm.

また、以上の実施の形態においては、例えば、波長４７０ｎｍ程度の青色の発光ダイオードを用いることができるが、これに限るものではない。例えば、波長４２０ｎｍ以下の紫外領域の発光ダイオードを用い、透光性フィルムに含有させる蛍光体として赤色、黄色、青色、緑色等に発光するものを適当な分量比で選定して混合することにより、自然光に一層近い白色光を得ることができる。   In the above embodiment, for example, a blue light emitting diode having a wavelength of about 470 nm can be used, but the present invention is not limited to this. For example, by using a light emitting diode in the ultraviolet region with a wavelength of 420 nm or less, selecting and mixing phosphors that emit light in red, yellow, blue, green, etc. in an appropriate proportion ratio as phosphors to be contained in the translucent film, White light closer to natural light can be obtained.

また、透光性フィルムを支持基板に固定する手段は、接着剤に限定されるものではなく、機械的な押さえ機構により固定することもできる。例えば、基板に溝を設け、当該溝に透光性フィルムをはめ込んで固定すればよい。発光ダイオードを実装する手段は、銀ペーストに限定されるものではなく、例えばＰｂＳｎやＡｕＳｎ等の共晶半田によって実装してもよい。半導体発光素子としては、発光ダイオードに限らず、例えば面発光レーザを適用することもできる。   The means for fixing the translucent film to the support substrate is not limited to the adhesive, and can be fixed by a mechanical pressing mechanism. For example, a groove may be provided in the substrate, and a light-transmitting film may be fitted into the groove and fixed. The means for mounting the light emitting diode is not limited to silver paste, and may be mounted by eutectic solder such as PbSn or AuSn. The semiconductor light emitting element is not limited to a light emitting diode, and for example, a surface emitting laser can be applied.

本発明によれば、半導体発光素子とパターン電極を接続するためのワイヤボンディング工程や、封止材により封止する工程が不要となるので、歩留よく安価に薄型の発光装置を製造することができる。   According to the present invention, since a wire bonding step for connecting the semiconductor light emitting element and the pattern electrode and a step of sealing with a sealing material are not required, it is possible to manufacture a thin light emitting device with high yield and low cost. it can.

本発明の第１実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 1st Embodiment of this invention 同上面図Top view 本発明の第２実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 2nd Embodiment of this invention 本発明の第３実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 3rd Embodiment of this invention. 本発明の第４実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 4th Embodiment of this invention. 本発明の第５実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 5th Embodiment of this invention 本発明の第６実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device which concerns on 6th Embodiment of this invention 同上面図Top view 本発明の第７実施の形態に係る発光装置の一断面図Sectional drawing of the light-emitting device concerning 7th Embodiment of this invention 従来の発光装置の一断面図Cross-sectional view of a conventional light emitting device

符号の説明Explanation of symbols

１ 支持基板
２ 青色発光ダイオード
３ 銀ペースト
４、４ａ、４ｂ 端子電極
５、５ａ 透光性フィルム
６ 接着剤
７ パターン電極
８ スルーホール
９ 金バンプ
１０ 蛍光体膜
１１ 凹部
１２ 樹脂
２１ 絶縁膜
２２ パターン電極
２３ 金ワイヤ
２４ 封止材 DESCRIPTION OF SYMBOLS 1 Support substrate 2 Blue light emitting diode 3 Silver paste 4, 4a, 4b Terminal electrode 5, 5a Translucent film 6 Adhesive 7 Pattern electrode 8 Through hole 9 Gold bump 10 Phosphor film 11 Recess 12 Resin 21 Insulating film 22 Pattern electrode 23 Gold wire 24 Sealing material

Claims (18)

支持基板と、前記支持基板の上に搭載された半導体発光素子と、前記半導体発光素子を覆うように前記支持基板に固定された透光性のフィルムと、前記透光性フィルムの上面に形成されたパターン電極と、前記透光性フィルムを貫通して形成されたスルーホールとを有し、前記パターン電極と前記半導体発光素子の端子電極とが前記スルーホールを介して導通している発光装置。 A support substrate; a semiconductor light emitting device mounted on the support substrate; a translucent film fixed to the support substrate so as to cover the semiconductor light emitting device; and an upper surface of the translucent film. A light emitting device having a patterned electrode and a through hole formed through the translucent film , wherein the pattern electrode and the terminal electrode of the semiconductor light emitting element are electrically connected through the through hole . 前記透光性フィルムは、前記半導体発光素子から発せられた光によって励起される蛍光体を含有する請求項１記載の発光装置。 The light-emitting device according to claim 1, wherein the translucent film contains a phosphor that is excited by light emitted from the semiconductor light-emitting element. 前記透光性フィルムの少なくとも一方の面に、前記半導体発光素子から発せられた光によって励起される蛍光体を含む蛍光体膜が形成されている請求項１記載の発光装置。 The light emitting device according to claim 1, wherein a phosphor film containing a phosphor excited by light emitted from the semiconductor light emitting element is formed on at least one surface of the translucent film. 前記蛍光体膜が前記透光性フィルムの前記半導体発光素子側の表面に形成されている請求項３記載の発光装置。 The light emitting device according to claim 3, wherein the phosphor film is formed on a surface of the translucent film on the semiconductor light emitting element side. 前記支持基板が凹部を有し、前記半導体発光素子が前記凹部内に搭載されている請求項１記載の発光装置。 The light emitting device according to claim 1, wherein the support substrate has a recess, and the semiconductor light emitting element is mounted in the recess. 前記凹部の側壁面が、底部から前記透光性フィルムに向かって広がるように形成されている請求項５記載の発光装置。 The light emitting device according to claim 5, wherein a side wall surface of the concave portion is formed so as to spread from the bottom toward the translucent film. 前記凹部の側壁面が前記支持基板の上面に対してなす角度は、３０°〜６０°の範囲である請求項６記載の発光装置。 The light emitting device according to claim 6, wherein an angle formed by a side wall surface of the concave portion with respect to an upper surface of the support substrate is in a range of 30 ° to 60 °. 前記半導体発光素子の少なくともひとつの前記端子電極が、前記支持基板または前記支持基板上に形成された電極に導通している請求項１記載の発光装置。 The light-emitting device according to claim 1, wherein at least one terminal electrode of the semiconductor light-emitting element is electrically connected to the support substrate or an electrode formed on the support substrate. 前記支持基板の上に、複数の前記半導体発光素子がアレイ状に実装されている請求項１記載の発光装置。 The light emitting device according to claim 1, wherein a plurality of the semiconductor light emitting elements are mounted in an array on the support substrate. 前記透光性フィルムは前記支持基板に接着剤によって固着されている請求項１記載の発光装置。 The light-emitting device according to claim 1, wherein the translucent film is fixed to the support substrate with an adhesive. 前記接着剤は、前記半導体発光素子から発せられた光によって励起される蛍光体を含有する請求項１０記載の発光装置。 The light-emitting device according to claim 10, wherein the adhesive contains a phosphor that is excited by light emitted from the semiconductor light-emitting element. 前記支持基板が金属製である請求項１記載の発光装置。 The light-emitting device according to claim 1, wherein the support substrate is made of metal. 前記支持基板と前記透光性フィルムとで囲まれた空間に、樹脂が封入されている請求項１記載の発光装置。 The light emitting device according to claim 1, wherein a resin is sealed in a space surrounded by the support substrate and the translucent film. 前記空間に封入された樹脂が、前記半導体発光素子から発せられた光によって励起される蛍光体を含有する請求項１３記載の発光装置。 The light emitting device according to claim 13, wherein the resin sealed in the space contains a phosphor that is excited by light emitted from the semiconductor light emitting element. 前記空間に封入された樹脂の屈折率が、前記半導体発光素子の発光部の屈折率よりも小さく、前記透光性フィルムの屈折率よりも大きい請求項１３記載の発光装置。 The light emitting device according to claim 13, wherein a refractive index of the resin sealed in the space is smaller than a refractive index of a light emitting portion of the semiconductor light emitting element and larger than a refractive index of the translucent film. 支持基板と、前記支持基板の上に搭載された半導体発光素子と、前記半導体発光素子を覆うように前記支持基板に固定された透光性のフィルムと、前記透光性フィルムの上面に形成されたパターン電極とを有し、前記パターン電極と前記半導体発光素子の端子電極とが導通し、
前記支持基板と前記透光性フィルムとで囲まれた空間に、大気圧よりも低い圧力で気体が封入されている発光装置。 A support substrate; a semiconductor light emitting device mounted on the support substrate; a translucent film fixed to the support substrate so as to cover the semiconductor light emitting device; and an upper surface of the translucent film. The pattern electrode and the terminal electrode of the semiconductor light emitting element are electrically connected,
A light-emitting device in which a gas is sealed in a space surrounded by the support substrate and the translucent film at a pressure lower than atmospheric pressure. 前記支持基板と前記透光性フィルムとで囲まれた空間に不活性ガスが封入されている請求項１記載の発光装置。 The light emitting device according to claim 1, wherein an inert gas is sealed in a space surrounded by the support substrate and the translucent film. 前記不活性ガスが窒素、アルゴン、ヘリウムあるいはこれらの混合ガスである請求項１７記載の発光装置。
The light-emitting device according to claim 17, wherein the inert gas is nitrogen, argon, helium, or a mixed gas thereof.
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