JP3182446B2 - Schottky barrier rectifier semiconductor device - Google Patents
Schottky barrier rectifier semiconductor deviceInfo
- Publication number
- JP3182446B2 JP3182446B2 JP08973392A JP8973392A JP3182446B2 JP 3182446 B2 JP3182446 B2 JP 3182446B2 JP 08973392 A JP08973392 A JP 08973392A JP 8973392 A JP8973392 A JP 8973392A JP 3182446 B2 JP3182446 B2 JP 3182446B2
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- conductivity type
- schottky barrier
- semiconductor device
- electrode metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 230000004888 barrier function Effects 0.000 title claims description 21
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ショットキバリア整流
半導体装置の構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a Schottky barrier rectifying semiconductor device.
【０００２】[0002]
【従来の技術】整流半導体装置は、順方向特性、逆方向
特性に種々の改善がなされ、損失低減の努力がなされて
いる。例えば、一導電型半導体（例えば、Ｎ型）表面に
逆導電型半導体領域（例えばＰ+型）を形成し、一導電
型半導体とはショットキバリア接触をし、逆導電型半導
体領域とはオ−ミック性接触をなすショットキバリア整
流半導体装置は、順方向降下電圧ＶFをそれほど犠牲に
する（２）ことなく、逆方向漏れ電流ＩRを小さく抑制
し得る構造として有効である。2. Description of the Related Art In a rectifying semiconductor device, various improvements have been made in forward characteristics and reverse characteristics, and efforts have been made to reduce losses. For example, a reverse conductivity type semiconductor region (for example, P + type) is formed on the surface of a one conductivity type semiconductor (for example, N type), and a Schottky barrier contact is made with the one conductivity type semiconductor, and an opposite conductivity type semiconductor region is formed with an ohmic contact. The Schottky barrier rectifying semiconductor device having a mimic contact is effective as a structure capable of suppressing the reverse leakage current IR without sacrificing the forward drop voltage VF so much (2).
【０００３】その構造例として、図１及び図２の断面構
造図のものがある。１は高濃度一導電型半導体（例え
ば、Ｎ+）、２は一導電型半導体（例えば、Ｎ）、３は
逆導電型半導体（例えば、Ｐ+）、４は電極金属、Ａは
アノ−ド、Ｃはカソ−ドである。As an example of the structure, there is a sectional structure shown in FIGS. 1 is a high-concentration one conductivity type semiconductor (for example, N +), 2 is one conductivity type semiconductor (for example, N), 3 is a reverse conductivity type semiconductor (for example, P +), 4 is an electrode metal, and A is an anode. , C is a cathode.
【０００４】しかして、０.５Ｖolt以下の低い順方向電
圧降下ＶFにおける順方向電流が流れる有効面積は、図
示のａ部（２−４間接触部）によって決定し、ｂ部（３
−４間接触部）は実質的には順方向電流の流れない領域
である。又、約０.５Ｖolt以上のＶFでは、逆導電型半
導体領域がＰ型の場合、少数キャリアが電子電流と同等
量流れる場となり、特に電極金属４にＣｒ、Ｔｉのよう
なバリア高さφBNの低い金属を用いて、小さいＶFを得
るために設計した整流半導体装置においては、通常、使
用する順方向電流密度が５０〜２００Ａmp／cm2の領域
であり、この領域では、ＶFは０.５Ｖoltより小さい値
である。The effective area in which a forward current flows at a low forward voltage drop VF of 0.5 Volt or less is determined by a portion a (contact portion between 2-4) shown in FIG.
−4 contact portion) is a region where substantially no forward current flows. Further, at a VF of about 0.5 Volt or more, when the semiconductor region of the opposite conductivity type is P-type, a field in which minority carriers flow in the same amount as the electron current is generated. In particular, the electrode metal 4 has a barrier height φBN such as Cr or Ti. In a rectifying semiconductor device designed to obtain a small VF by using a low metal, the forward current density to be used is usually in a range of 50 to 200 Amp / cm2, and in this region, the VF is smaller than 0.5 Volt. Value.
【０００５】従って、φBNの小さなショットキバリア整
流半導体装置としての有効面は、ａ部のみとなり、半導
体チップ内の有効面積活用率は２０〜５０％程度の低い
値となる。言い換えれば、一定の順方向電流を得るチッ
プとしては、大きなチップ面積を用意する必要があり、
高価な半導体装置となる欠点がある。Therefore, the effective surface of the Schottky barrier rectifying semiconductor device having a small φBN is only the portion a, and the effective area utilization rate in the semiconductor chip is a low value of about 20 to 50%. In other words, it is necessary to prepare a large chip area for a chip to obtain a constant forward current,
There is a disadvantage that it becomes an expensive semiconductor device.
【０００６】前記の欠点を解決するため、図３の断面構
造図に示す従来構造が提案されている。一導電型半導体
２と電極金属４の接触面をｃ部及びｄ部に増加するため
トレンチ溝による三面構造を形成している。しかして、
図３の構造では、順方向電流が主として流れるショット
キバリア接触面のｃ部及びｄ部とカソ−ドＣ間のそれぞ
れのシリ−ズ抵抗値が異なる。即ち、ｃ部からの抵抗は
（ｒ1＋ｒ2）、ｄ部からの抵抗は略ｒ1〜（ｒ1＋ｒ2）
となる。このため、順（３）方向電流は、抵抗の小なる
方に偏りやすく、高電流密度領域では、主として、ｄ部の
逆導電型半導体領域３（Ｐ+型）との境界寄りに電流が
集中し、ｃ部の接触面にはほとんど電流が流れなくな
る。従って、図３の構造は、シリ−ズ抵抗が比較的、効
かない低電流密度領域で、ＶFを大幅に低減できるが、
高電流密度領域では接触面積を増加した割合ほど、ＶF
を小さくできない。In order to solve the above-mentioned drawback, a conventional structure shown in a sectional structural view of FIG. 3 has been proposed. In order to increase the contact surface between the one conductivity type semiconductor 2 and the electrode metal 4 to the portions c and d, a three-sided structure with a trench is formed. Then
In the structure of FIG. 3, the series resistances between the cathode C and the portions c and d of the Schottky barrier contact surface through which the forward current mainly flows are different. That is, the resistance from the part c is (r1 + r2), and the resistance from the part d is approximately r1 to (r1 + r2).
Becomes For this reason, the forward (3) direction current tends to be biased toward the smaller resistance, and in the high current density region, the current mainly concentrates near the boundary of the d portion with the opposite conductivity type semiconductor region 3 (P + type). However, almost no current flows through the contact surface of the portion c. Therefore, the structure of FIG. 3 can greatly reduce VF in a low current density region where the series resistance is relatively ineffective,
In the high current density region, the rate of increase in the contact area
Cannot be reduced.
【０００７】[0007]
【発明が解決しようとする課題】従来構造については、
半導体チップ内の有効面積活用率が低い。換言すれば、一
定の電流を得るために大きな半導体チップ面積を必要と
する点、及び改善された従来構造においても高電流密度
領域では、接触面積を増したほど、ＶFを小さくできない
点、などが問題点である。SUMMARY OF THE INVENTION With respect to the conventional structure,
The effective area utilization rate in the semiconductor chip is low. In other words, the point that a large semiconductor chip area is required to obtain a constant current, and that the VF cannot be reduced as the contact area increases in the high current density region even in the improved conventional structure. It is a problem.
【０００８】[0008]
【課題を解決するための手段】本発明は、電極金属と一
導電型半導体間の一部に、一導電型半導体より高濃度の
第２の一導電型半導体領域を電極金属とショットキバリ
ア接触をなすように設ける事を主たる特徴とする構成に
より、シリーズ抵抗を大きくしないで、実質的に順方向
電流密度又はショットキバリア接触面を増加したショッ
トキバリア整流半導体装置を実現する。SUMMARY OF THE INVENTION According to the present invention, a part of a second one conductivity type semiconductor region having a higher concentration than the one conductivity type semiconductor is formed in a part between the electrode metal and the one conductivity type semiconductor. With a configuration mainly characterized in that it is provided so as to provide a Schottky barrier rectifying semiconductor device in which the forward current density or the Schottky barrier contact surface is substantially increased without increasing the series resistance.
【０００９】[0009]
【実施例】図４は、本発明構造の実施例１を示す断面構
造図であって、同一符号は同一部分をあらわす。５は、
本発明の要部であって、電極金属４と一導電型半導体
（Ｎ）２の間に形成した２より高濃度の第２の一導電型
半導体領域（Ｎ+）である。電極金属４、例えば、Ｃｒ
は、一導電型半導体２とのａ部、及び２とのｅ部、及び
ｆ部でショットキバリア接触を形成し、又、逆導電型半
導体領域３とはオ−ミック性接触をなして同電位とな
る。従って、順方向電流の主たる流路は、前記のａ部、
ｅ部、及びｆ部となる。しかして、図３の従来構造で
は、約５０Ａmp／cm2以上の高電流密度領域において、
３との境界（４）寄りのｄ部に電流集中がおきるのに対
して、実施例１では、シリ−ズ抵抗の関係からｅ部及び
ｆ部が主たる流路となる。従って、順方向電流の流れる
有効面積を増大したことになる。FIG. 4 is a sectional structural view showing a first embodiment of the structure of the present invention, and the same reference numerals denote the same parts. 5 is
It is a main part of the present invention, and is a second one conductivity type semiconductor region (N +) having a higher concentration than 2 formed between the electrode metal 4 and the one conductivity type semiconductor (N) 2. Electrode metal 4, for example, Cr
Form a Schottky barrier contact at the a portion with the one conductivity type semiconductor 2, the e portion and the f portion with the one conductivity type semiconductor 2, and make an ohmic contact with the opposite conductivity type semiconductor region 3 at the same potential. Becomes Therefore, the main flow path of the forward current is the part a,
The part becomes e part and f part. Thus, in the conventional structure of FIG. 3, in a high current density region of about 50 Amp / cm2 or more,
On the other hand, the current concentration occurs in the d section near the boundary (4) with the section 3, whereas in the first embodiment, the e section and the f section are the main flow paths due to the series resistance. Therefore, the effective area in which the forward current flows is increased.
【００１０】図５は、本発明構造の実施例２を示す断面
構造図である。又、前図までと同一符号は同一部分を示
す。（以下の実施例においても同様とする。）図５は、高
濃度の第２の一導電型半導体領域５と、逆導電型半導体
領域３が接するように形成した構造である。実施例１に
比して、順方向電流流路ｅ部がなく、ａ部及びｆ部が流
路となる。しかして、本発明構造の実現において、現状
では実施例２の方が製造容易である。FIG. 5 is a sectional view showing a second embodiment of the structure of the present invention. Further, the same reference numerals as those in the previous figures indicate the same parts. (The same applies to the following embodiments.) FIG. 5 shows a structure in which a high-concentration second one-conductivity-type semiconductor region 5 and a reverse-conductivity-type semiconductor region 3 are formed so as to be in contact with each other. As compared with the first embodiment, there is no forward current flow path e part, and the a part and the f part are flow paths. Thus, in realizing the structure of the present invention, the second embodiment is currently easier to manufacture.
【００１１】次いで、実施例２の設計例を公知の製造手
段で試作した各部寸法例を示す。一導電型半導体２とし
て、０.５Ω・cm（１×１０16Ａtoms／cm3）Ｎ型シリコ
ン・エピタキシアル成長層を用い、複数個のトレンチ溝
（凸部幅ｍ＝２.０μｍ）を形成した。各領域につい
て、第２の一導電型半導体領域５（Ｎ+）は、表面濃度
１×１０17Ａtoms／cm3、ｇ＝１μｍ、ｈ＝０.５μｍ
で、一対の５の間隔ｊ＝１.０μｍ、トレンチ溝の底部
に設けた逆導電型半導体領域３（Ｐ+）は、１×１０20
Ａtoms／cm3、ｉ＝３μｍ、ｌ＝０.３μｍ、一対の３の
間隔ｋ＝１.４μｍ、電極金属４は、Ｃｒを２０００オ
ングストロ−ム蒸着した。Next, examples of the dimensions of each part which are prototypes of the design example of the second embodiment by known manufacturing means will be shown. A plurality of trench grooves (projection width m = 2.0 μm) were formed using a 0.5 Ω · cm (1 × 10 16 Atoms / cm 3) N-type silicon epitaxial growth layer as the one conductivity type semiconductor 2. . In each region, the second one conductivity type semiconductor region 5 (N +) has a surface concentration of 1 × 10 17 atoms / cm 3, g = 1 μm, and h = 0.5 μm.
The opposite conductive type semiconductor region 3 (P +) provided at the bottom of the trench with a distance j of a pair of 5 = 1.0 μm is 1 × 10 20.
Atoms / cm @ 3, i = 3 .mu.m, l = 0.3 .mu.m, spacing between a pair of three k = 1.4 .mu.m, and electrode metal 4 was 2,000 Å of Cr vapor-deposited.
【００１２】図６、図７、図８、図９は、いづれも本発
明構造の他の実施例を示す断面構造図であって、図４及
び図５と同様に、実質的に順方向電流密度又はショット
キ接触面を増加したショットキバリア整流半導体装置を
提供する。順方向電流の主たる流路は、図６、図７、図
８では、ａ部及びｆ部、図９では、ｆ部及びｅ部とな
る。FIGS. 6, 7, 8, and 9 are cross-sectional views showing other embodiments of the structure of the present invention. As shown in FIGS. Provided is a Schottky barrier rectifying semiconductor device having an increased density or Schottky contact surface. The main flow paths of the forward current are the portions a and f in FIGS. 6, 7, and 8, and the portions f and e in FIG.
【００１３】又、図8は、第２の一導電型半導体領域５
が逆導電型半導体領域３の上部の電極金属4とも接して
形成すると順方向電流に対する無効面積分が減少して効
果的である。ただし、実用的には、平面構造的にみて、
Ｐ＋領域３の一部が電極金属4とオーミック性接触をす
る領域を形成し、逆方向漏れ電流を十分小さくする必要
がある。FIG. 8 shows a second one conductivity type semiconductor region 5.
Is formed in contact with the electrode metal 4 on the upper part of the reverse conductivity type semiconductor region 3, so that an ineffective area for a forward current is reduced, which is effective. However, practically, when viewed from a planar structure,
It is necessary to form a region where a part of the P + region 3 makes ohmic contact with the electrode metal 4 and sufficiently reduce the reverse leakage current.
【００１４】発明者等が、逆方向漏れ電流を改善するた
めに先に出願した、電極金属と一導電型半導体の接触面
からの逆導電型半導体領域の深さ、一対の逆導電型半導
体領域の間隔、逆導電型半導体領域と一導電型半導体の
境界での接線のなす角度等についての発明を併用するこ
とにより、更に、順方向、逆方向特性、及びスイッチング
特性の優れたショットキバリア整流半導体装置を得る。The depth of the reverse conductivity type semiconductor region from the contact surface between the electrode metal and the one conductivity type semiconductor, and a pair of the opposite conductivity type semiconductor regions, which the inventors have previously filed to improve the reverse leakage current. In addition, Schottky barrier rectifier semiconductors with excellent forward, reverse, and switching characteristics can be obtained by using the invention of the distance between the semiconductor layers, the angle between the tangent line at the boundary between the opposite conductivity type semiconductor region and the one conductivity type semiconductor, and the like. Get the device.
【００１５】図１２は、本発明構造を従来構造と対比し
て示した順方向特性図であり、順電圧降下ＶFと順方向
電流の関係が図１、図２、図３のいづれの従来構造より
優れていることを示している。FIG. 12 is a forward characteristic diagram showing the structure of the present invention in comparison with the conventional structure. The relationship between the forward voltage drop VF and the forward current is shown in FIG. 1, FIG. 2 and FIG. It shows that it is better.
【００１６】図１３は、本発明構造を従来構造と対比し
て示した逆方向特性図であり、逆方向電圧ＶRと逆方向
漏れ電流ＩRの関係は、図１、図２、図３の従来構造に
比して若干、悪くなったが、実用上、問題とならない範
囲であった。FIG. 13 is a reverse characteristic diagram showing the structure of the present invention in comparison with the conventional structure. The relationship between the reverse voltage VR and the reverse leakage current IR is the same as that shown in FIGS. Although slightly worse than the structure, it was in a range that would not cause any problem in practical use.
【００１７】その他、本発明の構成要件を満足するなら
ば、いづれの変形、付加、変換等の変更を行っても本発
明の範囲に含まれるものである。In addition, any modifications, additions, conversions, and the like are included in the scope of the present invention as long as the constituent requirements of the present invention are satisfied.
【００１８】[0018]
【発明の効果】以上説明したように、順方向電流の局部
的電流集中がなく、実質的に、ショットキバリア接触面
を増加したショットキバリア整流半導体装置を得るの
で、電源機器をはじめ、各種機器に利用して、産業上の
効果、極めて大なるものである。（６）As described above, a Schottky barrier rectifying semiconductor device having a substantially increased Schottky barrier contact surface without a local current concentration of a forward current can be obtained. Utilizing the industrial effect is extremely great. (6)
【図１】 従来構造の断面構造図である。FIG. 1 is a sectional structural view of a conventional structure.
【図２】 従来構造の断面構造図である。FIG. 2 is a sectional structural view of a conventional structure.
【図３】 従来構造の断面構造図である。FIG. 3 is a sectional structural view of a conventional structure.
【図４】 本発明構造の実施例１を示す断面構造図で
ある。FIG. 4 is a sectional structural view showing Example 1 of the structure of the present invention.
【図５】 本発明構造の実施例２を示す断面構造図で
ある。FIG. 5 is a sectional structural view showing a second embodiment of the present invention;
【図６】 本発明構造の他の実施例を示す断面構造図
である。FIG. 6 is a sectional structural view showing another embodiment of the structure of the present invention.
【図７】 本発明構造の他の実施例を示す断面構造図
である。FIG. 7 is a sectional structural view showing another embodiment of the structure of the present invention.
【図８】 本発明構造の他の実施例を示す断面構造図
である。FIG. 8 is a sectional structural view showing another embodiment of the structure of the present invention.
【図９】 本発明構造の他の実施例を示す断面構造図
である。FIG. 9 is a sectional structural view showing another embodiment of the structure of the present invention.
【図１２】 順方向特性図である。FIG. 12 is a forward characteristic diagram.
【図１３】 逆方向特性図である。FIG. 13 is a reverse characteristic diagram.
１ 高濃度一導電型半導体（例えば Ｎ＋） ２ 一導電型半導体（例えば Ｎ） ３ 逆導電型半導体領域（例えば Ｐ＋） ４ 電極金属 ５ ２より高濃度の第２の一導電型半導体領域（例
えばＮ＋） Ａ アノード Ｃ カソード ａ，ｂ，ｃ，ｄ，ｅ，ｆ 指定の位置 ｇ，ｈ，ｉ，ｊ，ｋ，ｌ，ｍ 指定の寸法 ＶＦ 順方向電圧降下 ＪＦ 順方向電流 ＶＲ 逆方向電圧 ＩＲ 逆方向漏れ電流Reference Signs List 1 high-concentration one-conductivity-type semiconductor (for example, N +) 2 one-conductivity-type semiconductor (for example, N) 3 reverse-conductivity-type semiconductor region (for example, P +) 4 electrode metal 5 2 ) A anode C cathode a, b, c, d, e, f Designated position g, h, i, j, k, l, m Designated dimensions VF Forward voltage drop JF Forward current VR Reverse voltage IR Reverse Directional leakage current
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平３−181172（ＪＰ，Ａ) 特開 平５−114723（ＪＰ，Ａ) 特開 平５−90565（ＪＰ，Ａ) 特開 平５−63184（ＪＰ，Ａ) 特開 平４−71273（ＪＰ，Ａ) 特開 平３−276762（ＪＰ，Ａ) 特開 平３−105975（ＪＰ，Ａ) 特開 昭62−296474（ＪＰ，Ａ) 特開 昭59−92575（ＪＰ，Ａ) 特開 昭56−88376（ＪＰ，Ａ) 特許3051528（ＪＰ，Ｂ２) 特許2835544（ＪＰ，Ｂ２) 特許2826914（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 29/872 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-181172 (JP, A) JP-A-5-114723 (JP, A) JP-A-5-90565 (JP, A) JP-A-5-90565 63184 (JP, A) JP-A-4-71273 (JP, A) JP-A-3-276762 (JP, A) JP-A-3-105975 (JP, A) JP-A-62-296474 (JP, A) JP-A-59-92575 (JP, A) JP-A-56-88376 (JP, A) Patent 3051528 (JP, B2) Patent 2835544 (JP, B2) Patent 2826914 (JP, B2) (58) Int.Cl. 7 , DB name) H01L 29/872
Claims (3)
導体領域を形成し、一導電型半導体とはショットキバリ
ア接触を、又、逆導電型半導体領域とはオーム性接触を
なす電極金属を設けるように構成したショットキバリア
整流半導体装置において、電極金属と一導電型半導体間
の一部に、一導電型半導体より高濃度の第２の一導電型
半導体領域を電極金属とショットキバリア接触をなすよ
うに設けた事を特徴とするショットキバリア整流半導体
装置。An electrode metal having a plurality of opposite conductivity type semiconductor regions formed on a surface of one conductivity type semiconductor and having a Schottky barrier contact with the one conductivity type semiconductor and an ohmic contact with the opposite conductivity type semiconductor region. In the Schottky barrier rectifying semiconductor device configured to provide the second conductive type semiconductor region having a higher concentration than the one conductive type semiconductor, the Schottky barrier contact with the electrode metal is partially formed between the electrode metal and the one conductive type semiconductor. A Schottky barrier rectifying semiconductor device, characterized in that it is provided in such a manner.
対の逆導電型半導体領域を形成し、一導電型半導体及び
第２の一導電型半導体領域にまたがってショットキバリ
ア接触をなすように、電極金属を設けたことを特徴とす
る請求項１のショットキバリア整流半導体装置。2. A semiconductor device comprising: a pair of second semiconductor regions of one conductivity type; and a pair of semiconductor regions of opposite conductivity type formed so as to form a Schottky barrier contact over the semiconductor region of one conductivity type and the second semiconductor region of one conductivity type. 2. The Schottky barrier rectifier semiconductor device according to claim 1, further comprising an electrode metal.
面からの深さにおいて、第２の一導電型半導体領域の方
が逆導電型半導体領域より浅くしたことを特徴とする請
求項１、又は請求項２のショットキバリア整流半導体装
置。3. The semiconductor device according to claim 1, wherein the second one-conductivity-type semiconductor region is shallower than the opposite-conductivity-type semiconductor region in a depth from a contact surface between the one-conductivity-type semiconductor surface and the electrode metal. Or the Schottky barrier rectifier semiconductor device according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08973392A JP3182446B2 (en) | 1992-03-13 | 1992-03-13 | Schottky barrier rectifier semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08973392A JP3182446B2 (en) | 1992-03-13 | 1992-03-13 | Schottky barrier rectifier semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05259436A JPH05259436A (en) | 1993-10-08 |
| JP3182446B2 true JP3182446B2 (en) | 2001-07-03 |
Family
ID=13978970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08973392A Expired - Fee Related JP3182446B2 (en) | 1992-03-13 | 1992-03-13 | Schottky barrier rectifier semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3182446B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001508946A (en) * | 1997-01-20 | 2001-07-03 | エービービー リサーチ リミテッド | Schottky diode using SiC and method of manufacturing the same |
| DE102004059640A1 (en) | 2004-12-10 | 2006-06-22 | Robert Bosch Gmbh | Semiconductor device and method for its production |
| JP2006352028A (en) * | 2005-06-20 | 2006-12-28 | Sumitomo Electric Ind Ltd | Rectifier element and manufacturing method thereof |
| JP2006352006A (en) * | 2005-06-20 | 2006-12-28 | Sumitomo Electric Ind Ltd | Rectifier element and manufacturing method thereof |
| JP4939839B2 (en) * | 2006-05-30 | 2012-05-30 | 株式会社東芝 | Semiconductor rectifier |
| JP5621198B2 (en) * | 2009-03-04 | 2014-11-05 | 日産自動車株式会社 | Semiconductor device |
| JP2011166181A (en) * | 2011-05-31 | 2011-08-25 | Sumitomo Electric Ind Ltd | Rectifying element and method of manufacturing the same |
| JP6012743B2 (en) * | 2012-09-06 | 2016-10-25 | 三菱電機株式会社 | Silicon carbide semiconductor device and manufacturing method thereof |
| US20240014328A1 (en) * | 2022-07-11 | 2024-01-11 | Semiconductor Components Industries, Llc | Diodes with schottky contact including localized surface regions |
-
1992
- 1992-03-13 JP JP08973392A patent/JP3182446B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05259436A (en) | 1993-10-08 |
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