JP3175766B2 - Non-destructive inspection device and non-destructive inspection method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for nondestructively inspecting a chip of a semiconductor device, and more particularly to a nondestructive inspection apparatus and method for detecting an electrically active defect.

[0002]

2. Description of the Related Art Conventionally, this kind of non-destructive inspection technology is, for example, "OBIC analysis technology using thermoelectromotive force" (132rd Committee of 132nd Research Meeting of 132nd Committee of Industrial Application of Charged Particle Beams by the Japan Society for the Promotion of Science). Materials, pp. 221-226, 199
As disclosed in Japanese Patent Application Laid-Open No. 30-Nov-2013), it is used for non-destructively detecting a defective portion of a wiring system as a part of a failure analysis and a failure analysis of a semiconductor device.

FIGS. 18 and 19 are configuration diagrams showing an example of a conventional nondestructive inspection apparatus and method. In the drawings, the same elements are denoted by the same reference numerals. A laser beam 3 generated by a laser generator 1 and narrowed down by an optical system 2 is scanned over a region to be observed of a semiconductor device chip 4. Scanning is performed by deflection by the optical system 2 under the control of the control / image processing system 106. Then, the current generated at that time is taken out by the prober 115-1 that has probed the bonding pad 14-1. This current is detected by the current change detector 131, and a change in the current value is displayed as an image on the image display device 7 as a luminance change corresponding to the scanning position under the control of the control / image processing system 106. This image is called a scanning current change image.

FIG. 18 shows a bonding pad 14 different from the bonding pad 14-1 connected to the current change detector 131 so that the generated current flows in a closed circuit.
This is a configuration example in the case where the prober 115-2 is probed at -7 and the prober 115-2 is grounded. On the other hand, FIG.
Reference numeral 9 denotes a configuration example in which all the bonding pads other than the bonding pad 14-1 connected to the current change detector 131 are opened so that the generated current flows only as a transient current in an open circuit. In order for a transient current to flow in an open circuit, a capacitance component is necessary. In this case, the capacitance component is a parasitic capacitance on a chip and a stray capacitance of a measurement system.

Next, the operation will be described. As described above, the only difference between FIG. 18 and FIG. 19 is whether a closed circuit is formed or an open circuit is formed. By the control of the control / image processing system 106,
A laser beam 3 generated by a laser generator 1 and narrowed down by an optical system 2 is scanned over an observation region of a semiconductor device chip 4. In response to scanning, for example, the current change detector 13
The current flowing into 1 is bright, and the current in the opposite direction is dark, so that the scanning current change image is displayed on the image display device 7 with brightness. At this time, gradation is displayed for both light and dark.

When a laser beam is irradiated near a defect, a thermoelectromotive force is generated at that moment and a current flows. When a portion having no defect is irradiated, no thermoelectromotive force is generated and no current flows. Therefore, on the image display device 7, an image having a contrast of light and dark (called a scanning current change image) is displayed only in the vicinity of the presence of the defect. When obtaining the scanning current change image, a scanning laser microscope image which is an optical reflection image corresponding to the scanning of the laser beam is taken at the same time or before and after. Thereafter, the scanning current change image and the scanning laser microscope image are combined by a general image processing technique to obtain an image in which the two images are superimposed. From this composite image, the place where the contrast of light and dark is obtained in the scanning current change image can be clearly recognized, and the defective part can be specified. The detection position accuracy of the defect position by this technique is of the order of submicron.

In order to clearly identify the type of defect and the cause of the non-destructively detected defect, the defect is usually physically destructively analyzed using a focused ion beam method or an electron microscope. Conversely, by clearly confirming the location of the defect with submicron position accuracy in this type of conventional technology, it becomes possible to efficiently perform physical analysis of submicron or smaller minute defects. Thus, the prior art is in an important position in a series of analysis procedures for failure analysis and failure analysis.

In FIGS. 18 and 19, for simplicity, 1 is used.
Although only one chip is shown, the same probing is performed when selecting and inspecting a large number of chips arranged on a wafer. When the inspection is performed after the post-process is completed, that is, after the chip is sealed in the package, electrical connection is made through pins of the package instead of probing. At this time, it goes without saying that the inspection is performed by removing the packaging material on the chip surface. As described above, in the following description, a single chip, a chip in a wafer state, and a packaged chip will all be described as an example of a single chip.

In order to clarify the following description, a chip serving as a model here and particularly important points will be described. FIG. 20 is a perspective view showing the structure of a chip serving as a model only for parts related to the present invention. In the present invention, the presence or absence of bonding pads, the presence or absence of electrical connection from individual pads, and the manner of electrical connection from individual pads are particularly important. The number of bonding pads 14 in the model chip is from 14-1 to 14-1 as shown in FIG.
2, but the present invention is not limited to a specific number of pads. In the present invention, it is important to distinguish between the front surface and the back surface of the chip. In FIG. 20, the front surface 4f (the surface on which the elements are formed on the semiconductor substrate) is visible, but the back surface 4b
(The surface of the semiconductor substrate where no element is formed) is hidden. In the following explanation, if it is important to distinguish between front and back, they will be specified.

In FIGS. 18 and 19, details of a laser beam scanning mechanism and a mechanism corresponding to scanning and scanning of the image display device are omitted. In the following description, elements related to the well-known technology are omitted in the same manner in order to avoid unnecessarily complicated description, and will not be described.

However, the relationship between the scanning of the laser beam and the acquired image (the scanning laser microscope image and the scanning current change image in the prior art, and the scanning laser microscope image and the scanning magnetic field image in the present invention) is an important point. Let me explain briefly. It should be noted that the scanning current change image and the scanning magnetic field image are different from each other only in the type of signal used for display, and are otherwise the same. Therefore, the scanning current change image will be described here as an example.

FIG. 21 is a conceptual diagram showing the relationship between laser beam scanning and an acquired image. In the figure, the same elements as those in FIG. 18 are denoted by the same reference numerals. The acquired images are of two types: a scanning laser microscope image and a scanning current change image. A scanning laser microscope image is an image in which reflected light from a laser irradiation point is detected in synchronization with the scanning of the laser beam, and the reflection intensity is displayed in a brightness manner corresponding to each point of the scanning. On the other hand, the method of acquiring the scanning current change image is as described above. By acquiring the scanning laser microscope image and the scanning current change image at the same time, or acquiring them successively without moving the device chip serving as a sample, an image at a corresponding location can be obtained. Normally, the contrast of the scanning current change image is seen only in a part of the observation area. By displaying both images in a superimposed manner, the contrast position of the scanning current change image on the scanning laser microscope image can be accurately determined. It is clearly visible and facilitates physical analysis of defects performed after non-destructive inspection.

The laser scanning position 201 on the device chip is shown in a portion surrounded by a curve 201C in the upper part of FIG. In the lower left circle 202C of FIG.
The coordinates 2 of the luminance display position in the scanning laser microscope image displayed on the scanning laser microscope image display window 204 above
02 was shown. The coordinates 203 of the luminance display position in the scanning current change image displayed on the scanning current change image display window 205 on the image display device 7 are shown in a portion surrounded by a curve 203C on the lower right of FIG. The scanning position 201 on the semiconductor device chip 4 which is being scanned by the laser beam 3 is shown at the left of the center in FIG. The window displayed on the image display device 7 in response to this scanning is shown in the center of FIG. 7A is a screen of the image display device, on which a scanning laser microscope image window 204 and a scanning current change image display window 205 are displayed.

Hereinafter, various relationships among the scanning of the laser beam, the scanning laser microscope image, and the scanning current change image will be described with reference to FIG. The laser scanning position 201 on the device chip 4 starts from a start point 201-1 and moves the first scan line horizontally to the end point 201- of the first scan line.
Move to 2. Next, it returns to the left end and moves horizontally to the right end on the second scanning line from the left end. This is repeated, for example, 512 times. Last is the left end 201-3 of the last scan line
To the right end 201-4 horizontally.

From the start point 201-1 to the end point 201-
The scanning up to 4 is performed continuously, and this is one scanning. Usually, one scan is performed for about 0.1 to 10 seconds. In synchronization with this scanning, the detection of reflected light for a scanning laser microscope image and the detection of a current change for a scanning current change image are performed, and the detected light intensity is converted into luminance and displayed according to the location. Is a scanning laser microscope image, and the detected current change is converted into luminance and displayed in accordance with the location as a scanning current change image, as described above.

In order to clarify the concept of the location correspondence, the relationship between the scanning area and the image display area and the observation magnification will be described. The ratio (yd) between the width xd and the height yd of the scanning area
/ Xd) needs to be kept constant also in the image display, so the ratio (y) of the width xr to the height yr of the scanning laser microscope image
(r / xr) is equal to (yd / xd). Similarly, the ratio (yi / xi) of the width xi and the height yi of the scanning current change image is (y
d / xd). The observation magnification is a ratio (xr / xd) or (xi / xd) of the width xd of the scanning region to the width xr of the scanning laser microscope image or the width xi of the scanning current change image. Usually, since the above-described superposition is performed, the scanning laser microscope image and the scanning current modified image are acquired with the same size, and therefore, these magnifications (xr / xd) and (xi / xd) are equal. Further, as described above, since the ratio of the width to the height of the scanning area is equal to the ratio of the width to the height of the image, the magnification is also equal to (yr / yd) or (yi / yd).

Next, the correspondence between points on the scanning area and points on the image will be described in detail. Laser scanning may be performed in an analog manner or in a digital manner. Since the image display is usually performed digitally, the position is represented by coordinates corresponding to the pixel position. Since the resolution at the time of image display is often 512 pixels × 512 pixels, the case of this resolution will be described here as an example.

The starting point 201-1 of the laser scanning corresponds to the starting point 202-1 in the scanning laser microscope image, and corresponds to the starting point 203-1 in the scanning current change image. Let the coordinates of these points on the image be (0,0). Similarly, the coordinates of a point on the image corresponding to the end point 201-2 of the first scanning line of the laser scanning are represented as (511, 0). Similarly, the coordinates of the start point 201-3 of the last scanning line of the laser on the image are (0, 511), and the coordinates of the end point 201-4 of the laser scanning on the image are (511, 511). Image display is performed by 262,144 (512 × 512) pixels which can be represented by these coordinates (0, 0), (1, 0)... (511, 511). Since the shading of each pixel is usually performed by 8 bits, it can be represented by 256 gradations. This concludes the description of the model chip and the relationship between laser scanning and the acquired image.

[0019]

The above-described conventional nondestructive inspection of a chip using a scanning current change image has the following problems. A first problem is that a semiconductor device chip to be inspected cannot be inspected until after a pre-process of its manufacturing process is completed and bonding pads are completed. In the related art, in order to detect a change in current caused by irradiating a laser beam, it is necessary to electrically connect an inspection device and a semiconductor device chip. Therefore, bonding pads are formed on the semiconductor device chip. Must be.

The second problem is that even if inspection is performed after the bonding pads are completed, that is, after the post-process, the number of bonding pads for connecting the current change detector is large. The point is that a large number of work steps and costs are required for preparation. In order to detect a defect present in the chip, the wiring in which the defect exists and the current change detector must be electrically connected. It is necessary to electrically connect the current change detector to all the bonding pads through which current can flow. As a result, as described above, a large number of work steps and costs are required for connection preparation.

When the inspection is performed in a closed circuit configuration, it is necessary to select another bonding pad for forming the closed circuit. Since the number increases in proportion to the square of the number, the number becomes enormous. To prepare such a connection every time the type of chip to be inspected changes, it is necessary to prepare a dedicated jig or change the connection, and the man-hour and cost required for that purpose are It is enormous.

The present invention has been made to solve such a problem, and an object of the present invention is to overcome the barriers of the conventional non-destructive inspection apparatus, such as the limitation of the application range and the restriction on the performance, and a new inspection method. An object of the present invention is to provide an apparatus and a method, thereby contributing to improvement in productivity and reliability of a semiconductor device. More specifically, it is an object of the present invention to provide an inspection apparatus and method that is not only non-destructive but also non-contact, so that inspection at a more upstream stage before bonding pads are completed in a semiconductor manufacturing process. Is to make it possible. Another specific object of the present invention is to provide a non-destructive inspection apparatus and method which enables efficient inspection without selecting a pad even in an inspection after completion of a bonding pad.

[0023]

In order to achieve the above object, the present invention provides a light source for generating a laser beam, a laser beam for generating a laser beam from the laser beam generated by the light source and irradiating the semiconductor device chip with the laser beam. A non-destructive inspection of the semiconductor device chip including a generation unit, wherein the laser beam irradiation by the laser beam generation unit generates and induces a thermoelectromotive force current in the semiconductor device chip. A magnetic field detecting means for detecting the intensity of the magnetic field is provided, and the presence or absence of a defect in the semiconductor device chip is inspected based on a detection result of the magnetic field detecting means. In the nondestructive inspection apparatus of the present invention, when the laser beam generated by the laser beam generating means is applied to a defective portion on the semiconductor device chip and the defective portion is heated, a current transiently flows due to thermoelectromotive force, result,
A magnetic field is generated. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

The present invention is also a method for non-destructively inspecting a semiconductor device chip by generating a laser beam, generating a laser beam from the laser beam, and irradiating the semiconductor device chip with the laser beam. Detecting the intensity of the magnetic field induced by the generation of a thermoelectromotive force in the semiconductor device chip by the irradiation of the beam, and inspecting the presence or absence of a defect in the semiconductor device chip based on the detected intensity of the magnetic field. . In the nondestructive inspection method of the present invention,
When a laser beam is applied to a defective portion on a semiconductor device chip to heat the defective portion, a current flows transiently due to a thermoelectromotive force, and as a result, a magnetic field is generated. By detecting the intensity of the magnetic field, a defect included in the semiconductor device chip is detected.

That is, in the present invention, a current change detector is connected to a semiconductor device chip because a magnetic field induced by the current is measured instead of directly measuring a current generated by a thermoelectromotive force as in the related art. No need to
There is no need to select a bonding pad and connect a current change detector to the bonding pad, which has been required in the past, so that the number of man-hours and cost required for inspection can be greatly reduced. In addition, since the defect of the semiconductor device chip can be detected before the bonding pad is formed on the semiconductor device chip, the inspection can be performed at a more upstream stage before the bonding pad is completed in the semiconductor manufacturing process. In comparison, the feedback of the inspection result can be performed at a more upstream stage of the semiconductor manufacturing process.

In the nondestructive inspection apparatus of the present invention, one or more current circuits having one end electrically connected to a predetermined location on the semiconductor device chip are provided, and a magnetic field detecting means is provided near the current circuit. It is characterized by being arranged. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows from the semiconductor device chip to the current circuit to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

According to the nondestructive inspection method of the present invention, one or more current circuits having one end electrically connected to a predetermined location on a semiconductor device chip are provided, and a magnetic field generated when a current flows through the current circuit is generated. Is detected. In the nondestructive inspection method according to the present invention, when a laser beam is applied to a defective portion on a semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force.
This current flows from the semiconductor device chip to the current circuit to induce a magnetic field. Then, a defect included in the semiconductor device chip is detected by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is extracted by a current circuit provided outside the semiconductor device chip. For this reason, it is possible to detect the magnetic field by setting the path of this current circuit so that a strong magnetic field is generated by the current flowing through the current circuit, and the magnetic field induced by the current transiently flowing only inside the chip is reduced. Defects can be detected with high sensitivity even when they are extremely small and difficult to detect. According to the present invention, the current circuit is connected to, for example, the bonding pad, so that the inspection is performed after the bonding pad is formed.

Further, in the nondestructive inspection apparatus according to the present invention, all of the bonding pads or the electrodes are electrically connected to all of the bonding pads or the electrodes exposed on the front surface side of the semiconductor device chip. Provide a conductive thin film on the surface side of the semiconductor device chip,
The magnetic field detecting means is arranged near the semiconductor device chip. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows through a closed circuit formed by the bonding pad or electrode of the semiconductor device chip, the wiring including the defective portion, and the conductive thin film to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Further, in the nondestructive inspection method according to the present invention, all of the bonding pads or the electrodes are electrically connected to all of the bonding pads or the electrodes exposed on the surface side of the semiconductor device chip. Provide a conductive thin film on the surface side of the semiconductor device chip,
The magnetic field detecting means is arranged near the semiconductor device chip. In the nondestructive inspection method of the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force. This current flows through a closed circuit formed by the bonding pad or electrode of the semiconductor device chip, the wiring including the defective portion, and the conductive thin film to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is caused to flow through a closed circuit formed by a wiring including a defective portion and a conductive thin film in the semiconductor device chip. Therefore, since the conductive thin film can be connected to the electrode exposed on the surface of the semiconductor device before the bonding pad is formed, the inspection can be performed before the formation of the bonding pad. Further, since the current flowing through the closed circuit flows for a relatively long time, a relatively low-speed magnetic field detecting means, that is, a low-cost magnetic field detecting means can be employed. Also, since the conductive thin film only needs to be connected to all of the bonding pads or electrodes, no special jig is required, and the operation can be performed efficiently.

Further, in the nondestructive inspection apparatus of the present invention, a conductive film for wiring electrically connected to a wiring to be inspected to be inspected of the semiconductor device chip is formed on the entire front surface side of the semiconductor device chip, and the magnetic field detection is performed. The means is arranged near the semiconductor device chip. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows through a closed circuit formed by the inspection target wiring including the defective portion and the wiring conductive film, and induces a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Further, in the nondestructive inspection method of the present invention, a conductive film for wiring electrically connected to a wiring to be inspected to be inspected of the semiconductor device chip is formed on the entire front surface side of the semiconductor device chip, The means is arranged near the semiconductor device chip. In the nondestructive inspection method of the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force. This current flows through a closed circuit formed by the inspection target wiring including the defective portion and the wiring conductive film, and induces a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is caused to flow through a closed circuit formed by the wiring including the defective portion and the wiring conductive film in the semiconductor device chip. Therefore, the conductive film for wiring can be connected to the wiring to be inspected formed in the semiconductor device, so that the inspection can be performed during the manufacturing process, and while the added value of the semiconductor device is small, Inspection can be performed efficiently. Inspection can be performed at a stage during the manufacturing process. Further, since the current flowing through the closed circuit flows for a relatively long time, a relatively low-speed magnetic field detecting means, that is, a low-cost magnetic field detecting means can be employed.

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1A is a block diagram showing a first embodiment of the present invention, FIG. 1B is a block diagram showing a fifth embodiment of the present invention, and FIG. 2 is a second embodiment of the present invention. FIG. 3 is a block diagram showing a third embodiment of the present invention, and FIG. 4 is a block diagram showing a fourth embodiment of the present invention. In these drawings, the same elements are denoted by the same reference numerals.

Hereinafter, the non-destructive inspection apparatus of the present invention will be described with reference to the above drawings, and the non-destructive inspection method of the present invention will be described. First, the configuration of the first to fourth embodiments of the nondestructive inspection apparatus according to the present invention will be sequentially described with reference to FIG. 1A and FIGS. 2 to 4, and thereafter, each embodiment will be described. Will be described. In the nondestructive inspection apparatus 301 of the first embodiment shown in FIG. 1A, an optical system 2 (laser beam generating means and a laser beam generating means according to the present invention) emitted from a laser generator 1 (a light source according to the present invention). A magnetic field generated when the laser beam 3 narrowed down by the laser beam scanning means is irradiated on the surface 4f of the semiconductor device chip 4 while scanning (arrow A) is applied to a magnetic field detector 5 (magnetic field detection according to the present invention). Means). The scanning of the laser beam is performed by deflecting the laser beam inside the optical system 2. Then, the output of the magnetic field detector 5 is displayed on the image display device 7 by the control / image processing system 6 in correspondence with the scanning position of the laser, so that the scanning magnetic field image corresponding to the scanning current change image in the related art is obtained. can get. Control / image processing system 6
The image display device 7 constitutes an image display unit according to the present invention. The nondestructive inspection apparatus 301 includes a light receiving element (not shown), and forms a laser scanning microscope according to the present invention with the laser generator 1, the optical system 2, and the light receiving element.
With this laser scanning microscope, the semiconductor device chip 4
Can be acquired. Also,
In the present embodiment, the control / image processing system 6 together with the image display device 7 is a second image according to the present invention that combines and displays a laser scanning microscope image and a magnetic field scanning image acquired by the laser scanning microscope. A display device is configured.

The nondestructive inspection device 302 of the second embodiment shown in FIG. 2 is configured to perform inspection more effectively than the first embodiment,
The non-destructive inspection device 301 is different from the above-described non-destructive inspection device 301 in that the laser beam is radiated from the back surface 4b side of the semiconductor device chip 4 in the point that it is set to 00 nm (nanometer).

There are three reasons for making the wavelength of the laser light 1300 nm. The first two reasons are that the substrate portion of the target semiconductor device is often formed of silicon (Si). The first reason is that by setting the wavelength of the laser beam to 1300 nm, a laser beam is irradiated from the back surface of the chip and the vicinity of the surface can be heated by the laser beam transmitted through the substrate. In a current semiconductor device, a multilayer wiring structure is common, and as a result, an upper layer wiring is usually wider and often covers a lower layer wiring. In addition, when mounted, the chip surface is often directed to the mounting substrate surface, or a structure is used in which the chip surface is covered with leads during packaging.
Therefore, in such a chip and a mounting structure, it is difficult to heat most of the wiring portions by irradiating a laser beam from the chip surface. Therefore, it is necessary to irradiate the laser beam from the back surface, and it is important that the inspection device can irradiate the laser beam from the back surface of the chip.

Since laser light having a wavelength of about 1100 nm or more passes through low-concentration silicon used as a substrate to a considerable extent, it is necessary to irradiate the back surface of a semiconductor device chip to heat a wiring portion near the front surface. Is possible. For example, when a 1152-nm He-Ne laser is used, the wafer thickness of a P-
In the case of m, about 50% of the laser light is transmitted. Therefore, in order to heat the wiring near the front surface by irradiating from the back surface of the chip, it is necessary to use laser light having a wavelength of 1100 nm or more.

Second using laser light having a wavelength of 1300 nm
The reason for this is that the OBIC current (Optical Beam I
In other words, it is possible to prevent the occurrence of an induced current (optically excited current). 1200nm for silicon
Irradiation with a laser beam having a wavelength of about the order of magnitude or less generates an OBIC current, which becomes noise with respect to the thermoelectromotive force current. For example, the H of 1152 nm (1.076 eV)
When an e-Ne laser is used, an electron-hole pair is not generated due to a transition between a valence band and a conduction band (1.12 eV) of silicon.
No or little IC current occurs. However, in a region where As (arsenic), B (boron), P (phosphorus), or the like having a concentration enough to form a transistor is present as an impurity, transition through these impurity levels is 1.076.
Since an energy of eV or less is sufficient, an OBIC current is generated to such an extent that detection is required, and this OBIC current becomes noise with respect to the thermoelectromotive current. Therefore, in order to prevent noise due to such OBIC current, 12
It is necessary to use laser light having a wavelength of 00 nm or more.

A third method using a laser beam having a wavelength of 1300 nm
The reason is that the shorter the wavelength is, the narrower the laser beam can be narrowed, so that the resolution of the scanning laser microscope image and the scanning magnetic field image increases. For these three reasons, a wavelength of 1
A laser beam having a wavelength of 200 nm or more and having a wavelength as short as possible is preferable. As a laser that satisfies this condition and can be used practically, it is effective to use a laser beam having a wavelength of 1300 nm. Note that, specifically, the output is 100 m
If a W laser diode is affordable, and if it is desired to increase the laser irradiation power to increase the thermoelectromotive current, a 500 mW YLF (Ilf) laser may be used.

The laser beam is irradiated from the back surface of the semiconductor device chip for the following two reasons. The first reason is that
As described above, by irradiating the laser beam from the back surface of the chip, it is possible to cope with a chip having a multilayer wiring structure and a mounted chip. The second reason is that the magnetic field detector 5 can be arranged on the chip surface side. When the magnetic field detector is placed on the chip surface side, the distance between the path where the thermoelectromotive current flows and the magnetic field detector is closer, and the magnetic field detected by the magnetic field detector is stronger, so a smaller thermoelectromotive current is detected. Will be able to
As described above, it is originally better to irradiate the laser beam from the back of the chip for different reasons, and it is better to arrange the magnetic field detector on the front of the chip. Therefore, the configuration is easy.

Next, a third embodiment will be described. The non-destructive inspection device 303 shown in FIG. 3 is different from the non-destructive inspection device 302 in that a magnetic field detector specifically includes a SQUID (SuperconductingQua).
ntum Interference Device;
This is a point that a superconducting quantum interference device (55) is used, and liquid nitrogen 9, heat insulating materials 8a and 8b, and a magnetic shielding material 10 are additionally provided.

In the current state of the art, to detect a minute magnetic field due to a thermoelectromotive current, the most sensitive SQUID is the most sensitive magnetic field observation method. SQUIDs can be roughly classified into a low-temperature SQUID using a low-temperature superconductor such as Nb (niobium) and a high-temperature superconducting SQUID using an oxide superconductor. Since a low-temperature SQUID requiring cooling with liquid helium is difficult to handle in terms of cost and maintenance, a high-temperature superconducting SQUID sufficient for cooling with liquid nitrogen is used here. High temperature superconducting SQUI
As a specific material of the ID, YBCO (Y-Ba-C
u-O) and HBCO (Ho-Ba-Cu-O).

The liquid nitrogen 9 for cooling the SUQID 55, a heat insulating material 8a for insulating between the liquid nitrogen 9 and the semiconductor device chip 4, and a heat insulating material 8b for insulating between the liquid nitrogen 9 and the surroundings are also required. is there. As a specific material of the heat insulating material, Styrofoam is preferable because it can be easily made thin and has a high heat insulating effect. Magnetic shielding material 10 to cut off magnetic field noise entering from the surroundings
Therefore, it is necessary to completely cover the entirety as much as possible. It should be noted that, as shown in FIG. 3, opening a hole 10a large enough to allow a laser beam to pass through does not significantly affect the magnetic shielding effect.

Next, a fourth embodiment will be described with reference to FIG. The difference between the nondestructive inspection device 304 of the fourth embodiment and the nondestructive inspection device 303 is that
The cooler 11 is used as a method for cooling the QUID. By bringing the SQUID 55 into contact with the cooler 11, the SQUID 55 can be easily cooled even below the liquid nitrogen temperature. The magnetic shield material 10 and a glass material 13 for passing a laser beam form an airtight structure, and the vacuum pump 12 makes a vacuum to prevent heat dissipation.

Next, the operation of the non-destructive inspection apparatus thus configured will be described. First, a common operation of the first to fourth embodiments will be described, and then, a unique operation of each embodiment will be described. It is assumed that the semiconductor device chip to be inspected is in one of the following states (1) to (3). (1) Chip in wafer state in the middle of pre-manufacturing process (2) Pre-process is completed to complete bonding pad, (2-a) Chip not tested or defective in wafer state or chip in wafer state (2-b) 1) Chips determined to be defective as a result of inspection or chips in wafer state (3) Chips after completion of post-process and packaged First, common operations of the first to fourth embodiments will be described with reference to FIG. ) Will be described. The laser generated from the laser generator 1 is irradiated with the laser beam 3 onto the semiconductor device chip 4 while being narrowed down and scanned by the optical system 2. As a laser constituting the laser generator 1, a 633 nm He-Ne laser, a 1152 nm He-Ne laser, a 1300 nm laser diode, a 1300 nm YLF (Ilf) laser, etc. are suitable in terms of performance and cost. It can be used properly.

The scanning in the optical system 2 is performed by deflecting vertically and horizontally using a galvanomirror, an acousto-optic device, an electro-optic device or the like. The diameter of the laser beam can be selected in a wide range by selecting a lens, but the minimum diameter is limited to a wavelength by the diffraction limit. By providing the optical system 2 with a confocal function, the spatial resolution of a scanning laser microscope image is about 400 nm when using a 633 nm laser.
With a laser of 00 nm, a resolution of about 800 nm can be realized.

The resolution of the important image in the scanning magnetic field image is not the resolution of the scanning magnetic field image itself but the resolution of the scanning laser microscope image at the same place as the scanning magnetic field image, and this determines the position recognition accuracy of the defect. . The reason is as follows. In order to detect the position of the defect, the scanning laser microscope image and the scanning magnetic field image are superimposed by an ordinary image processing function. For example, the scanning laser microscope image has 256 gradations of black and white, and the scanning magnetic field image has red (positive). And green (negative) in 256 gradations. The contrast of the scanning magnetic field image as a defect image can be adjusted to be narrowed down to the size of one pixel having the strongest intensity, and this size can be much smaller than the spatial resolution of the scanning laser microscope image. Like this one
By displaying the scanning magnetic field image narrowed down to the pixel contrast and the scanning laser microscope image as a superimposed image, the position of the defect can be clearly recognized in the scanning laser microscope image. That is, the recognition accuracy of the defect position is determined by the spatial resolution of the scanning laser microscope image.

It is also effective to employ the following method in relation to the spatial resolution of the scanning laser microscope image. As described above, when the OBIC current is generated, it causes noise and it becomes difficult to detect the thermoelectromotive force current itself.
It is desirable to use a laser having a wavelength of 1300 nm.
Also, another advantage of the above-mentioned 1300 nm laser is that the laser light is irradiated from the back side of the chip, taking advantage of the advantage that the attenuation in silicon is small, as shown in FIGS. Inspection devices 302, 303,
Although it is 304, if it is necessary even when a laser beam of 1300 nm is used, it is of course possible to adopt a configuration in which a laser beam is irradiated from the surface only for the purpose of preventing OBIC noise. However, 1300n
When m laser light is used, spatial resolution becomes a problem. From the viewpoint of enhancing the spatial resolution of the scanning laser microscope image, it is preferable to use a laser having a wavelength of 633 nm. The following method is effective in solving this dilemma.

That is, as the laser generator 1, a He-Ne laser having a wavelength of 633 nm and a YLF having a wavelength of 1300 nm are used.
(Ilf) A laser is prepared, a laser of 633 nm is used for acquiring a scanning laser microscope image, and 1300 nm is used for acquiring a scanning magnetic field image. Then, these two images are superimposed and displayed. With this method, a defect can be detected with a spatial resolution of 400 nm, which is the resolution of a laser of 633 nm. When a laser beam having a wavelength of 1300 nm is irradiated from the back surface, a scanning laser microscope image of 633 nm used for superposition with the resulting scanning magnetic field image is obtained by irradiating the laser beam from the front surface side of the chip, and thereafter, , After converting to a mirror image.
This method improves the detection position accuracy of the defect about twice as compared with the case where only the 1300 nm laser is used.

If the position cannot be clearly recognized only by the scanning laser microscope image from the front surface, the scanning laser microscope image from the rear surface may be used together to superimpose the three images. An improvement effect can be seen depending on the position of the defect. If the spatial resolution of the scanning laser microscope image from the back surface is insufficient with a laser of 1300 nm, a method of using a laser with a wavelength as short as possible by compensating for the attenuation in silicon using a high-output laser is also conceivable. However, since the resolution improving effect is about 1.3 times the wavelength ratio at most, a large effect cannot be expected.

In the non-destructive inspection device 304 shown in FIG.
The semiconductor device chip 4 is irradiated with the laser beam 53 through the glass material 13. At this time, the selection of the glass material may be made with emphasis on the transmittance of the laser beam having a wavelength of 1300 nm, and the laser beam having a wavelength of 633 nm may be selected. Need not be so high. The reason is that a large power laser beam is necessary to generate a sufficient thermoelectromotive current, but the laser beam power does not need to be so large to obtain a scanning laser microscope image. . In any case, ultimately, it may be determined by a trade-off with the cost including the laser generator 1 and the light receiving element (not shown) constituting the scanning laser microscope.

Returning to the description of the operation with reference to FIG. The laser beam 3 irradiates the semiconductor device chip 4 while being scanned (arrow A), and the thermoelectromotive current flows only when irradiating near a defect of the type that generates thermoelectromotive force. There is no place to generate a detectable thermoelectromotive force on a normally manufactured semiconductor device chip. The types of defects that generate a thermoelectromotive current are voids in wiring, various precipitates in wiring, and foreign matter.

When these defective portions are irradiated with the laser beam 3, a thermoelectromotive current is generated, and as a result, a magnetic field is induced. The induced magnetic field is detected by the magnetic field detector 5. (1) S
QUID magnetometer, (2) fluxgate magnetometer,
Four types of (3) nuclear magnetic resonance magnetometer and (4) semiconductor magnetic sensor (Hall element) are known.
Has an ultrasensitive measurement range from 1 fT (femtotesla) to 10 nT (nanotesla), whereas the fluxgate magnetometer and the nuclear magnetic resonance magnetometer have a 0.1 nT
The semiconductor magnetic sensor has a measurement area from (nano Tesla) to 0.1 mT (millitesla) and a measurement area from 1 nT (nano Tesla) to 1T (Tesla), and the sensitivity is lower than that of SQUID.

According to the results of experiments conducted by the inventors of the present invention, a magnetic field generated by a thermoelectromotive current when a defect in a wiring of a semiconductor device chip is irradiated with a laser can be detected with the current state of the art. A magnetic field detector having sensitivity is SQUID (Superconductor).
Quantum Interference Devi
ce; superconducting quantum interference device) only. Here, only the case where the high-temperature superconducting SQUID is used is shown from the viewpoint of cost and ease of handling, but if higher sensitivity is required, the low-temperature superconducting SQUID may be used.

The operation when the high-temperature superconducting SQUID is used will be described below with reference to FIGS.
The high-temperature superconducting SQUID is usually used while immersed in liquid nitrogen. In this case, as shown in FIG. 3, it is necessary to insert a heat insulating material 8a between the SQUID 55 and the semiconductor device chip 4 to keep the temperature of the semiconductor device chip close to room temperature. Test results showing how low temperatures the semiconductor device chip can withstand. A temperature that has been sufficiently proven in the past is about -55 degrees Celsius. Actual test conditions showing this resistance include, for example, exposure to +150 degrees Celsius for 10 minutes or more, and then reaching -55 degrees Celsius within 15 minutes, and then -5 degrees Celsius.
Exposed for more than 10 minutes at 5 degrees, then +1 Celsius within 15 minutes
After reaching 50 degrees, it is exposed to +150 degrees Celsius for 10 minutes or more, ...
It is tough. Even in such a test, the chip itself shows a sufficient resistance, so it seems that there is no problem even if the chip is exposed to a lower temperature in a short-time inspection, but there is no sufficient data showing the limit so far.

In the nondestructive inspection apparatus 303 shown in FIG. 3, the reason why the semiconductor device chip 4 needs to be kept at a temperature close to the normal temperature is not due to the resistance to the chip temperature but to the prevention of frost adhesion. It is. As a result of experiments conducted by the inventors of the present invention, if styrene foam is used as a heat insulating material, even if the thickness is reduced to about 0.3 mm,
It turned out that the chips could be kept to a degree that would not frost.

In the nondestructive inspection device 304 shown in FIG. 4, there is no fear of frost, so that there is no problem even if the temperature of the semiconductor device chip 4 is reduced to at least about -55 degrees Celsius. In order for the SQUID to operate normally, it is necessary to maintain the temperature at a constant temperature equal to or lower than a predetermined temperature. In the case of the nondestructive inspection device 303 shown in FIG. 3, since the SQUID is immersed in liquid nitrogen, it is sufficient to add the amount of liquid nitrogen appropriately so that the SQUID is sufficiently immersed. When long-term inspection is performed continuously, automatic supply is convenient. The automatic nitrogen supply device is an ED used for elemental analysis.
It is used for X (energy dispersive X-ray analyzer), etc., and has a sufficient practical record.

In the case of the nondestructive inspection device 304 shown in FIG. 4, the SQUID 55 is cooled using the cooler 11.
The benefits of using a cooler are twofold. The first advantage is that the temperature can be lower than immersion in liquid nitrogen and cooling.
That is, the operation of the ID is stabilized. A second advantage is that the distance between the semiconductor device chip 4 and the SQUID 55 can be reduced. The magnetic field caused by the thermoelectromotive current increases as the distance from the current path decreases. Therefore, the shorter the distance between the semiconductor device chip 4 and the SQUID 55, the higher the magnetic field can be detected, and the higher the defect detection sensitivity.

When cooling by immersing in liquid nitrogen, liquid nitrogen 9 and heat insulating material 8a exist between the semiconductor device chip 4 and the SQUID 55 as in the nondestructive inspection device 303 shown in FIG. On the other hand, when cooling with a cooler, as shown in FIG. 4, since the space between the semiconductor device chip 4 and the SQUID 55 is vacuum, both can be brought extremely close to each other.

The direction and magnitude of the magnetic field also depend on the length and direction of the current path. Since the direction of the current flowing due to the presence of the defect cannot be predicted, it is necessary to detect the magnetic fields in all directions. To this end, among the components of SQUID 55,
The direction of the detection coil that has the role of actually detecting the magnetic field is
It is necessary to set three independent directions and detect the magnetic field independently for each direction. The display of the scanning magnetic field image does not necessarily need to be displayed as three independent images. For example, it is usually sufficient to display the absolute value of the sum of the vectors as luminance as one scanning magnetic field image. Also, as described above, the detection coil of the SQUID 55 is preferably as close to the semiconductor device chip 4 as possible, because the magnitude of the magnetic field is stronger as it is closer to the path in which the thermoelectromotive current flows.

The magnetic field detector 5 detects a magnetic field, generates a signal having a signal strength corresponding to the strength, and outputs the signal to the control / image processing system 6. The control / image processing system 6 converts this signal into luminance and displays it on the image display device 7 as an image corresponding to the scanning position. When a sufficient S / N (signal-to-noise ratio) cannot be obtained in one scan, the images obtained in a plurality of scans are integrated. If a sufficient S / N cannot be obtained, the S / N can be significantly improved by modulating the laser beam and amplifying the signal with a lock-in amplifier.

Next, the operation of each of the different forms of the semiconductor device chip will be described in order for each form. (1) When the chip is a wafer in the middle of the pre-manufacturing process In this case, it is only necessary to first know which chip on the wafer is defective. Scan an area. In some cases, instead of scanning, the entire chip may be irradiated at once. At that time, slits of the same size as the chip are provided, and by irradiating the laser light with the size of the chip accurately or the inner size excluding the bonding pad portion, efficiently,
The presence or absence of a defect for each chip can be determined. If it is only necessary to determine whether the chip is non-defective or defective, the inspection is completed. If a defective chip is found and it is desired to know the position of the defect accurately, the laser beam can be gradually narrowed, and the scanning range can be gradually narrowed accordingly.

(2-a) Although the previous step has been completed,
When the defect is an uninspected chip or a chip in a wafer state. This case is also basically the same as the case (1). However, it may not be possible to perform a sufficient defect inspection with a thermoelectromotive current generated only inside the chip. Therefore, if possible, it is desirable to execute the inspection in the fifth and subsequent embodiments described later. .

(2-b) In the case where the preceding step has been completed but the chip or wafer has been determined to be defective as a result of the inspection, the inspection is required in this case because the location of the defect is narrowed down and the cause of the defect is determined. This is when you want to find out. Therefore,
Only the latter half of the operation described in (1) needs to be performed. However, also in this case, it is desirable to execute the inspection in the fifth and subsequent embodiments, if possible, as in (2-a).

(3) In the case of a packaged chip after the post-process has been completed. In this case, the determination as to whether it is a normal product or a defective product has been completed by electrical measurement. However, since the determination is not 100% correct due to the problem of testability, it is possible to make an accurate determination by treating the quality as uncertain. Therefore, it is basically the same as the case (1). However, in this case, similarly to (2-a), a sufficient defect inspection may not be performed with a thermoelectromotive current generated only inside the chip, and therefore, in the fifth and subsequent embodiments, It is desirable to perform an inspection. In particular, when the chip is packaged, the inspection according to the fifth and later embodiments to be described later can be easily performed as compared with the case where the chip is not packaged. Inspection by example is preferred.

Next, fifth to seventh embodiments will be described in detail with reference to the drawings. FIG. 1B is a configuration diagram showing a fifth embodiment of the present invention, FIG. 5 is a bottom view showing in detail the periphery of a chip to be inspected by the fifth embodiment, and FIG. FIG. 7 is a configuration diagram showing a current path focusing board constituting an embodiment, and FIG. 7 is a configuration diagram showing a current path focusing board constituting a seventh embodiment of the present invention.
In the drawing, the same elements as those in FIG. 1A and FIGS. 2 to 4 are denoted by the same reference numerals, and description thereof will be omitted here.

First, the configuration of the fifth to seventh embodiments will be described with reference to FIG. 1B and FIGS. 5 to 7. First, the non-destructive inspection device 305 of the fifth embodiment shown in FIG. 1B is different from the non-destructive inspection device 301 in that a magnetic field induced by a thermoelectromotive current is applied to the semiconductor device chip 4. Is not directly detected by the magnetic field detector arranged near the. That is, the current path from the semiconductor device chip 4 to the bonding pad 14 and the prober 15 is connected to the current path focusing board 1.
Collect in one place at 6. The thermoelectromotive current is detected using the magnetic field detector 5 near the current path focusing board 16. FIG.
As shown in (1), all the current paths (current circuits according to the present invention) connected from the bonding pads 14-1 to 14-12 by using the prober 15 are focused on the current path focusing board 16. I have. As described above, since the description is made using the model chip shown in FIG. 10, the number of pads is as small as 12, but the method of the present invention does not limit the number of pads.

The sixth embodiment shows a more specific example of the fifth embodiment. In the sixth embodiment, as shown in FIG. 6, the current path focusing board 16 of the sixth embodiment is configured by arranging metal wiring 16b on an insulating substrate 16a. Are gathered from the connection terminal 16c to the prober at one of the convergence points 16d of all the wirings and are short-circuited. In such a configuration, the thermoelectromotive current always flows in a closed circuit passing through the focal point 16d. The magnetic field detector is arranged near the convergence point 16d to measure the magnetic field. Each connection terminal 16c to the prober
Are bonding pads 14-1 to 14-1 respectively.
2 is connected to the corresponding prober.

The seventh embodiment also shows a more specific example of the fifth embodiment. In the seventh embodiment, as shown in FIG.
Connection terminal 17 to each prober on the insulating substrate 17a
All the wirings 17b from c are not short-circuited at the focal point 17d. That is, the thermoelectromotive force current is formed so as to form an open circuit and flow. The magnetic field detector has a focal point of 17d
And measure the magnetic field.

Next, the operation of the fifth to seventh embodiments configured as described above will be described. In the description of the operation, the points different from the first to fourth embodiments will be mainly described. In the nondestructive inspection device 305 shown in FIG. 1B, the thermoelectromotive current generated in the semiconductor device chip 4 by the irradiation of the laser beam 53 flows into the current path focusing board 16 through the bonding pad 14 and the prober 15. . Here, considering the case where the laser beam 53 irradiates a certain defective portion on the semiconductor device chip 4, the path through which the current flows is limited, and therefore, the path of the current flowing through the current path focusing board 16 is also limited. I have. Usually, it can be considered that the water flows along one of the paths that is the easiest to flow. However, since this path cannot be predicted, the magnitude and direction of the generated magnetic field cannot be predicted as in the case of the magnetic field generation in the first to fourth embodiments. Further, the fact that the magnitude of the magnetic field is extremely weak is the same as the generation of the magnetic field in the first to fourth embodiments. Therefore, also in the case of the fifth embodiment, as in the case of the first to fourth embodiments, the magnetic field detector 5 uses an SQUID at the present time and the magnetic field detection surface is, for example, 3 Must be placed in two perpendicular directions. Since the cooling mode of the SQUID conforms to the first to fourth embodiments, the description will not be repeated here.

The advantage of taking out the thermoelectromotive current outside the semiconductor device chip 4 and measuring the magnetic field will be described. The magnetic field generated by the current is stronger as it is closer to the current path, and stronger as the current path is longer. By taking out the thermoelectromotive current outside the semiconductor device chip 4 and measuring the magnetic field, both of these two factors can be set so that the magnetic field becomes stronger.

First, the length of the current path will be described.
If the current path length in the semiconductor device chip is short, μ
Since the order of m is in the order of m and the shape of the path cannot be controlled, the generated magnetic fields may weaken each other and cannot be detected depending on the path. On the other hand, it is easy for the extracted wiring to have a current path length of the order of cm or more, and it is also easy to detect in a place where the magnetic field generated by controlling the path does not weaken. For example, if there is a destructive place in the route as shown in FIG. 6, there is always a reinforce place, and it is easy to detect at a reinforce place.

Next, the distance between the wiring path and the magnetic field detector will be described. In the first to fourth embodiments, S
When using a QUID, the SQUID and the current path cannot be brought close enough to contact. The reason is that the semiconductor device chip usually does not have the SQUID resistance at the operating temperature. On the other hand, in the fifth to seventh embodiments, it is not difficult to manufacture the current focusing boards 16 and 17 so as to have the resistance at the operating temperature of the SQUID. Is easy. As described above, the fifth to seventh embodiments are advantageous in terms of the distance between the current path and the magnetic field detector. As described above, by extracting the current path outside the semiconductor device chip 4 and setting the current path so that the magnetic field generated from this current path is increased, the detectable magnetic field is increased, and as a result, a weaker magnetic field is detected. The thermoelectromotive force can also be detected, resulting in an advantage that detectable defects increase.

An example of the experimental results of the sixth embodiment will be briefly described below. Wiring width 0.2μm, wiring thickness 0.1μ
1300 n on Si (silicon) having a size of about 0.1 μm deposited in the TiSi (titanium silicide) wiring of
m from a current path taken out through a bonding pad and a prober.
mm apart, HBCO (Ho-Ba-Cu-
A high-temperature superconducting SQUID made in O) was placed, and magnetic field detection was attempted. As a result, the magnetic field could be detected with sufficient intensity. The cooling of the SQUID at this time was performed in the form according to FIG.

Next, the operation of the seventh embodiment will be described with reference to FIG. In this case, the current flows only in the open circuit, but since the end of the open circuit is focused on the focusing point 17d, there is an advantage that the magnetic field detector 5 may be arranged at one location near the focusing point 17d. is there. The fact that the use of the open circuit configuration has a defect that is easier to detect than the use of the closed circuit configuration is shown by the results of the inspection performed by the conventional technology.
Therefore, when actually performing the inspection, it is desirable to use both the current path focusing boards of the sixth and seventh embodiments.

Next, problems in the first to seventh embodiments will be described. In the case of the first to fourth embodiments having the configuration as shown in FIG.
Inspection during the manufacturing process where bonding pads are not yet formed on the semiconductor chip has the advantage that it can be performed.However, since the thermoelectromotive current flows only in an open circuit, the current flowing time is relatively short, and the response time is short. It is difficult to detect a thermoelectromotive current with a slow magnetic field detector. On the other hand, among the fifth to seventh embodiments having the configuration as shown in FIG. 1B, in the sixth embodiment, the thermoelectromotive force current flows in a closed circuit, so that the current is There is an advantage that a thermoelectromotive current can be detected even with a magnetic field detector having a relatively long flowing time and a relatively low response speed. However, in the fifth to seventh embodiments, the current path focusing board and the prober are used. Therefore, there is a problem that it is difficult to perform the inspection only after the bonding pads are formed on the semiconductor chip, and that a large number of steps and costs are required for the preparation for the inspection.

Next, eighth to eleventh embodiments which can solve the above problem will be described with reference to the drawings. 8 is a block diagram showing an eighth embodiment of the present invention, FIG. 9 is a block diagram showing a ninth embodiment, FIG. 10 is a block diagram showing a tenth embodiment, FIG. 11 is eleventh
1 is a configuration diagram showing an embodiment of the present invention. In the figure, FIG.
4A and 4B or the same elements as those in FIG. 4 are denoted by the same reference numerals, and description thereof is omitted here.

First, the configurations of the eighth to tenth embodiments will be sequentially described with reference to FIGS.
Thereafter, the operation of each embodiment will be described. FIG.
Non-destructive inspection device 306 of the eighth embodiment shown in FIG.
1 does not directly detect the magnetic field induced by the thermoelectromotive current by the magnetic field detector arranged near the semiconductor device chip 4 as in the nondestructive inspection apparatus of FIG.
Unlike the nondestructive inspection device of (B), the current path board 16
Instead, a conductive thin film 30 is provided. The conductive thin film 30 is configured to be electrically connected to all of the bonding pads 14 or the electrodes exposed on the surface 4f side of the semiconductor device chip 4 so that all of the bonding pads 14 or the electrodes have the same potential. ing. That is, the conductive thin film 30 is brought into close contact with the entire surface 4f of the semiconductor device chip 4 (in the case of a wafer, the entire surface of the wafer) before the inspection. As a result, all of the bonding pads or electrodes exposed on the surface 4f of the semiconductor device chip 4 or the surface of the wafer are electrically connected, and a thermoelectromotive current flows between any electrodes or between any bonding pads. Is possible.

In the eighth embodiment, the defective portion of the semiconductor device chip 4 is
Is heated by the laser beam 3 to generate a thermoelectromotive current and flow through the conductive thin film 30 as a closed circuit. In this case, the thermoelectromotive current flows through the closed circuit without attenuating for a relatively long time.

The first reason for irradiating a laser beam from the back side of a semiconductor device chip is that the wiring portion of a chip having a multilayer wiring structure is effectively heated in the same manner as described in the third embodiment. This is because you can do it. The second reason is that by arranging the magnetic field detector 5 on the surface side of the chip, a smaller thermoelectromotive current can be detected. That is, the thickness of the chip is generally about 500 μm, and the thickness of the conductive thin film 30 of about 100 μm can be easily used. Therefore, when the magnetic field detector 5 is disposed on the surface side of the chip with the conductive thin film 30 interposed therebetween, the magnetic field detector 5 can be closer to the path where the thermoelectromotive current flows, and a smaller thermoelectromotive current can be reduced. Can be detected. Thus, it is better to irradiate the laser beam 3 from the back surface of the semiconductor device chip 4 for originally different reasons.
It is better to dispose it on the surface of the laser beam. However, since it is disposed on the opposite side, as a result, the laser generator 1 and the optical system 2 for generating the laser beam 3 and the magnetic field detector 5
Can be prevented from interfering with each other.

Next, the spatial distribution of the magnetic field generated by the thermoelectromotive current, which is an important point that makes the present invention effective, will be described. The path of the thermoelectromotive current generated by irradiating the laser beam 3 to the defective portion and heating it includes the laser-irradiated portion on the semiconductor device chip 4 to which the laser beam 3 has been irradiated, and The wiring portion extends from both sides to the bonding pads 14 or the electrodes, and the conductive thin film 30 electrically connects the bonding pads or the electrodes outside the semiconductor device chip 4. Since the current path flowing inside the semiconductor device chip 4 flows through the wiring portion of the semiconductor device chip 4, the width is relatively narrow, and the magnetic field induced by the current flowing through this wiring portion also connects the bonding pads or the electrodes. It is localized along the current path in the semiconductor device chip 4. On the other hand, the current path flowing through the conductive thin film 30 outside the semiconductor device chip 4 is distributed over a relatively wide range between the bonding pads or the electrodes, so that the magnetic field induced by the current flowing through the conductive thin film 30 is also wide. Spread over the range.

A magnetic field generated in a current path inside the chip;
Although the directions of the magnetic field generated in the current path outside the chip are directions that cancel each other out, they are not completely canceled because the distribution regions of the magnetic field are different as described above. As described above, it is possible to increase the decay time of the current by forming a closed circuit with the conductive thin film 30, and not to completely cancel the magnetic fields generated by the current flowing through the closed circuit with each other. Are the points that make the present invention effective.

Next, a ninth embodiment will be described. The non-destructive inspection device 307 shown in FIG. 9 is different from the non-destructive inspection device 306 in that the SQUID 55 is specifically used as the magnetic field detector, and the liquid nitrogen 9 and the heat insulating material 8a , 8b, and the magnetic shield material 10 are added. As a specific material of the heat insulating material, styrene foam can be easily thinned, and the heat insulating effect is high and suitable. In order to block magnetic field noise coming from the surroundings, it is necessary to cover as much as possible with the magnetic shield material 10. As shown in FIG. 9, making a hole through which a laser beam passes does not significantly affect the magnetic shielding effect.

Next, a tenth embodiment will be described with reference to FIG. The nondestructive inspection device 308 of the tenth embodiment is different from the nondestructive inspection device 307 in that the cooler 11 is used as a method for cooling the SQUID and a vacuum is used for heat insulation. That is. By bringing the SQUID 55 into contact with the cooler 11,
The SQUID 55 can be easily cooled below the liquid nitrogen temperature (77K). By making the magnetic shield material 10 and the glass material 13 for passing a laser into an airtight structure and applying vacuum to the vacuum pump 12, heat dissipation can be prevented.

Next, the operation of the non-destructive inspection apparatuses of the eighth to tenth embodiments configured as described above will be described. First, the common operation of the eighth to tenth embodiments will be described, and then, the unique operation of each embodiment will be described. The semiconductor device chips to be inspected include the following (4) to (6)
It is assumed that there is any state of (4) Chip in wafer state in the middle of pre-manufacturing process (5) Pre-process is completed and bonding pad is completed; (5-a) Good or defective chip or wafer not tested; (5-b) Electrical Chip or wafer determined to be defective as a result of inspection. (6) Packaged chip after post-process is completed. First, common operations of the eighth to tenth embodiments will be described in first to seventh embodiments. A description will be given with reference to FIG. Prior to inspection,
The conductive thin film is brought into close contact with the entire surface of the semiconductor device chip or the entire surface of the wafer. Any suitable conductive thin film, such as an aluminum foil or a copper foil, may be used as long as it is thin, flexible, and strong. To adhere the thin film,
A roller or the like having rubber on the surface may be used. In addition,
In FIG. 8, the conductive thin film 30 is drawn in close contact with only the bonding pads or electrodes of the semiconductor device chip and not in contact with other portions of the semiconductor device chip. Therefore, there is no particular problem even if the conductive thin film 30 is brought into close contact.

Next, the operation of the inspection itself is substantially the same as that of the above-described first to fourth embodiments, so that the operation of the first to fourth embodiments will be described. The following description focuses on the differences from the operation. The laser generated from the laser generator 1 is narrowed down by the optical system 2 and irradiates the semiconductor device chip 4 as a laser beam 3 while being scanned. The laser beam 3 irradiates the semiconductor device chip 4 sequentially while being scanned, but the thermoelectromotive current flows only when irradiating near a defect of the type where thermoelectromotive force is generated. There is no place where a large thermoelectromotive force is generated on a normally manufactured semiconductor device chip. Known types of defects that generate thermoelectromotive force include voids in wiring, various precipitates in wiring, and foreign substances.

The generated thermoelectromotive current induces a magnetic field.
This magnetic field is detected by the magnetic field detector 5. The path through which the thermoelectromotive current flows reaches a bonding pad 14 or an electrode from one side of the portion of the semiconductor device chip 4 to which the laser beam has been irradiated, and the conductive thin film 30 extends from the bonding pad 14 or the electrode. Through the other bonding pad 14 or the electrode, and finally return from the other bonding pad 14 to the other side of the laser beam irradiated portion. The number of bonding pads 14 or electrodes through which the thermoelectromotive current passes is at least a pair. However, there may be three or more bonding pads 14 or electrodes, and the number is not always a pair. Of the current paths, the current path inside the semiconductor device chip 4 is relatively small because the path spreads through the wiring in the chip. On the other hand, the planar spread of the current path outside the semiconductor device chip 4, that is, in the conductive thin film 30, is large because it spreads inside the conductive thin film 30. The magnetic fields induced by the currents flowing in both paths generally occur in directions that cancel each other out, but do not completely cancel each other because there is a large difference in the distribution of the two current paths.

As described in the first to fourth embodiments, a high-sensitivity magnetic field measuring method for detecting the magnetic field generated in this manner is as described in (1) SQUID (superconducting quantum interference device). Four types are known: magnetometers, (2) fluxgate magnetometers, (3) nuclear magnetic resonance magnetometers, and (4) semiconductor magnetic sensors (Hall elements). Here, the high-temperature superconducting SQUI
Only the case where the ID is used is shown, but when observation with higher sensitivity is required, a low-temperature superconducting SQUID may be used.

The cooling mode of the SQUID when the high-temperature superconducting SQUID is used is shown in FIGS.
Since the cooling mode of the SQUID at 0 is the same as that of FIGS. 3 and 4 described above, the description thereof is omitted.

As described above, the direction and magnitude of the magnetic field induced by the thermoelectromotive current also depend on the length and direction of the current path. Since the direction of a current flowing due to the presence of a defect cannot be predicted, it is necessary to detect magnetic fields in all directions. For this, SQUID
As described above, it is necessary to set the directions of the magnetic field detecting coils having the function of actually detecting the magnetic field among the three components in three independent directions and to detect the magnetic field independently. The display of the scanning magnetic field image does not necessarily need to be displayed as three independent images. For example, it is usually sufficient to display the absolute value of the sum of the vectors as luminance as one scanning magnetic field image. Further, since the magnitude of the magnetic field is stronger as it is closer to the path where the thermoelectromotive current flows, it is as described above that the magnetic field detection coil of the SQUID is better as close to the semiconductor device chip 4 as possible.

At this time, since the current path outside the semiconductor device chip 4, that is, the magnetic field induced by the current flowing inside the conductive thin film 30, is widely distributed, the magnetic field is detected near the semiconductor device chip 4. As described above, the magnetic field induced by the current flowing inside the semiconductor device chip 4 is not completely canceled as described above. Regarding the length of the current path, generally, the longer the current path, the stronger the generated magnetic field. Usually, the distance between the completed bonding pads 14 is longer than the distance between the exposed electrodes during the manufacturing process. Therefore, the bonding pad 14 is usually compared with the current flowing through the conductive thin film 30 adhered to the exposed electrode during the manufacturing process.
After completion of the above, a current flowing through the conductive thin film 30 adhered to these bonding pads 14 can generate a larger magnetic field.

Returning to FIG. 8, the description of the operation will be continued. A signal having a signal strength corresponding to the strength of the magnetic field detected by the magnetic field detector 5 is input to the control / image processing system 6. The control / image processing system 6 converts this signal into luminance,
The image is displayed on the image display device 7 as an image corresponding to the scanning location.
When a sufficient S / N (signal-to-noise ratio) cannot be obtained in one scan, the images obtained in a plurality of scans are integrated. If a sufficient S / N cannot be obtained, the S / N can be significantly improved by modulating the laser beam and amplifying the signal with a lock-in amplifier, as described above.

Next, the operation that differs depending on the form of the semiconductor device will be described in order for each form. (4) When the wafer is in the middle of the pre-manufacturing process In this case, some electrodes are
Inspection is carried out in the state where it is exposed on the surface of. However, since a closed circuit cannot be formed when the entire surface of the wiring is exposed on the surface, it is necessary to select a state in which an appropriate closed circuit can be formed, such as immediately after the via portion is formed. First, the conductive thin film 30
Is sufficiently adhered to all the electrodes exposed on the surface of the semiconductor device chip 4. An aluminum foil or a copper foil is used as the conductive thin film, and is uniformly contacted with a roller or the like so that the conductive thin film is closely adhered along irregularities on the surface of the semiconductor device chip 4.
In FIG. 8, the conductive thin film 30 is drawn so as to be in contact with only the bonding pad 14 or the electrode portion exposed on the surface for the sake of simplicity, but it is not always necessary to do so. What is necessary is just to make it adhere to the whole surface of the semiconductor device chip 4. First, it is only necessary to know which chip on the wafer is defective. First, the beam diameter is increased as much as possible and a wide range is scanned. In some cases, instead of scanning, the entire chip may be irradiated at once. At that time, slits of the same size as the chip are provided, and the laser is irradiated accurately with the size of the chip or the inside size excluding the bonding pad part, so that the presence / absence of defects for each chip can be determined efficiently. Can be done.
If it is only necessary to determine whether the chip is non-defective or defective, the inspection is completed. If a defective chip is found and it is desired to know the position of the defect accurately, the laser beam can be gradually narrowed, and the scanning range can be gradually narrowed accordingly.

(5-a) Although the previous step has been completed,
When the defect is an uninspected chip or wafer This case is also basically the same as the case (4). First, the conductive thin film 30 is sufficiently adhered to the surface of the bonding pad 14. The following operation is exactly the same as (4).

(5-b) When the previous step has been completed, but the chip or wafer is determined to be defective as a result of the inspection. In this case, the inspection is required because the location of the defect is narrowed down and the cause of the defect is determined. This is when you want to find out. Therefore,
After the conductive thin film 30 is sufficiently adhered to the surface of the bonding pad 14, only the latter half of the operation described in (4), that is, the laser beam is gradually squeezed, and the scanning range is gradually narrowed accordingly, and the defect position is reduced. Finally, it is sufficient to narrow down to the submicron region.

(6) In the case where the post-process is completed and the chip is a packaged chip or a chip mounted in a bare chip state. In this case, the determination as to whether it is a good product or a defective product is usually completed by electrical measurement. However, since the determination is not 100% correct due to the problem of testability, it is possible to make an accurate determination by treating the quality as uncertain. Therefore, it is basically the same as the case of (5-a). That is, the operation (5-a) may be performed after exposing the front and back surfaces of the semiconductor device chip 4 in the same manner as the method used in the normal failure analysis. However, in order to form a closed circuit, the bonding pad 14 is not necessarily required.
The conductive thin film 30 does not need to be in close contact with the semiconductor device chip 4, and all the external lead terminals of the semiconductor device chip 4 are electrically connected by the conductive thin film 30 or an arbitrary conductor so as to have the same potential, thereby forming a closed circuit. May be. At this time, since the conductive thin film 30 is not brought into close contact with the bonding pad 14, the front side of the semiconductor device chip 4 does not need to be exposed, and only the back side of the semiconductor device chip 4 is exposed for laser beam irradiation. Just do it. In particular, this method can be easily performed when the back surface side is originally exposed as in the case of flip-chip mounting. Further, the above-described configuration of forming a closed circuit by electrically connecting all the external lead terminals of the semiconductor device chip 4 with the conductive thin film 30 or an arbitrary conductor so as to have the same potential is the same as that of the above-described first embodiment. This corresponds to the sixth embodiment.

As described in detail above, according to the eighth to tenth embodiments, the detection of the magnetic field induced by the current flowing through the closed circuit without attenuating for a relatively long period of time has a relatively high response speed. Is possible even with a slow magnetic field detector,
A non-destructive inspection device can be realized at relatively low cost. Also, bringing the conductive thin film 30 into close contact with the entire surface of the semiconductor device chip or wafer has the advantage that time and cost can be minimized. Further, since the laser beam 3 may be irradiated from the back side of the semiconductor device chip or wafer, the conductive thin film 30
Does not need to be transparent and may be non-magnetic.
Therefore, there is an advantage that a low-cost conductive thin film 30 such as an aluminum foil or a copper foil can be employed.

Next, an eleventh embodiment of the present invention will be described in detail with reference to the drawings. FIG. 11 is a configuration diagram showing an eleventh embodiment of the present invention. In the figure, FIG.
The same elements as those in FIG. 10 are denoted by the same reference numerals, and description thereof will be omitted here. The eleventh embodiment is different from the eighth to tenth embodiments in that the laser beam 3 is irradiated from the front side of the semiconductor device chip 14 and the magnetic field detector 5 is irradiated on the back side of the semiconductor device chip 14. And a point that a transparent film that transmits the laser beam 3 is used as the conductive thin film 30 to be in close contact with the surface of the semiconductor device chip 14.

First, the configuration will be described. An optical system 2 to which a laser is input from a laser generator 1 is configured to irradiate a laser beam 3 from the front side of a semiconductor device chip 4. The magnetic field detector 5 is arranged on the back side of the semiconductor device chip 4. A conductive thin film 30 having sufficiently high transparency at the wavelength of the laser to be used is provided on the front side of the semiconductor device chip 4 so that the laser beam 3 irradiated from the front side is not attenuated. To be described below).

Next, the operation will be described. First, the conductive thin film 30 is brought into close contact with the entire surface of the semiconductor device chip 4 and connected to the bonding pad 14 or an electrode exposed on the surface. Next, the inspection operation is started. FIG.
Then, the thermoelectromotive current generated in the laser-irradiated portion of the semiconductor device chip 4 by the irradiation of the laser beam 3 flows through the wiring portion in the semiconductor device chip 4 and, for example, passes through a bonding pad or an electrode 14-1. Conductive thin film 3
0, and again flows through the wiring in the semiconductor device chip 4 via the bonding pad or the electrode 14-7, and returns to the original laser irradiated portion. Then, the thermoelectromotive current continues to flow on this path until the energy is lost by Joule heat. In the case of the eleventh embodiment as well, as in the case of the eighth to tenth embodiments, the SQUID is currently used as the magnetic field detector, and in order to detect the magnetic field efficiently, The magnetic field detection surfaces need to be arranged in three perpendicular directions. Since the cooling mode of the SQUID conforms to the above-described mode, it will not be described here. This first
According to the first embodiment, the eighth to tenth embodiments described above.
It is needless to say that the same operation and effect as the embodiment can be obtained.

Points to be noted in the eleventh embodiment are as follows.
The distance between the path of the generated thermoelectromotive current and the magnetic field detector 5. Semiconductor device chip 4 by magnetic field detector 5
Since the magnetic field is detected from the rear surface side of the semiconductor device chip, the distance between the path of the generated thermoelectromotive current and the magnetic field detector 5 is at least the thickness of the semiconductor device chip 4 or more. Therefore,
In order to more reliably detect the magnetic field from the back side of the semiconductor device chip 4 with the magnetic field detector 5, the back side of the semiconductor device chip 4 is ground as much as possible before the inspection, and the thickness of the semiconductor device chip 4 is reduced to detect the magnetic field. It is desirable to reduce the distance between the vessel 5 and the path of the thermoelectric current.

As described above, in the eighth to eleventh embodiments, first, low-cost electrical nondestructive inspection becomes possible in the middle of a pre-process for manufacturing a semiconductor device. Therefore, appropriate measures regarding product yield and reliability are facilitated. The reason is that it is not necessary to form a bonding pad prior to the inspection, and a thermoelectric current flows through a closed circuit, so that a relatively low-speed magnetic field detector can be used. Secondly, in a mode after the end of the previous process, more efficient and low-cost inspection can be performed. The reason is that the detection of a defect that generates a thermoelectromotive force can be performed without considering a combination of electrical connections and without using a special tool such as a current path focusing board and a prober.

In the first to eleventh embodiments, the laser beam 3 emitted from the laser generator 1 and narrowed down by the optical system 2 is scanned on the surface 4f of the semiconductor device chip 4 while scanning. The magnetic field generated when irradiated
The laser beam is detected by the magnetic field detector 5 and scanned by the optical system 2.
This is done by deflecting the laser beam inside. However, when the irradiation position of the laser beam 3 on the semiconductor device chip is changed by scanning the laser beam 3 as described above, there is the following problem. That is, if the area where the irradiation position of the laser beam 3 changes on the semiconductor device chip (hereinafter referred to as a scanning area) is wide, the area where the magnetic field is generated is wide, so the location where the magnetic field is generated is also wide and the magnetic field is generated. When the place where the magnetic field detector 5 moves away from the magnetic field detector 5, there is a possibility that only a weak magnetic field can be detected. This is because the position of the magnetic field detector 5 is fixed relatively to the semiconductor device chip.

To solve the above-mentioned problem, for example, the following configuration may be adopted. That is, the relative position between the irradiation point of the laser beam emitted from the laser generator 1 and the optical system 2 constituting the laser beam generating means and the detection point at which magnetism is detected by the magnetic field detector 5 constituting the magnetic field detecting means. The laser generator 1, the optical system 2, and the magnetic field detector 5 are configured so that a proper positional relationship is fixed. Then, while the relative position between the irradiation point and the detection point is fixed, the irradiation position of the laser beam on the semiconductor device chip is changed by moving the semiconductor device chip with respect to the irradiation point and the detection point. To be configured. With this configuration,
Even when the scanning area of the laser beam 3 on the semiconductor device chip is wide, the position where the magnetic field is generated is always the same position with respect to the magnetic field detector 5, and the irradiation position of the laser beam on the semiconductor device chip changes. Even if it does, the magnetic field detector 5 will not be able to detect only a weak magnetic field. At this time, the relative positional relationship between the irradiation point of the laser beam emitted from the laser beam generation means (laser generator and optical system) and the detection point at which magnetism is detected by the magnetic field detection means (magnetic field detector) is as follows. Of course, it is desirable to set the magnetism detected at the detection point by the magnetic field detector to be the largest value.

Next, a problem in the case of inspecting a semiconductor device chip during a manufacturing process will be discussed. FIG.
It is sectional drawing which shows the example of a structure of the semiconductor device chip in the wafer state in the middle of a manufacturing process. In FIG. 12, the semiconductor device chips 4 arranged on the wafer on which the first-level wiring is formed include a silicon substrate (Si substrate) 31 and
An insulating layer 32 formed on the upper side of the silicon substrate 31;
Adjacent first-layer wirings 34, 34 formed on the insulating layer 32 and insulated from each other by the insulating layer 32, and the silicon substrate 31 and the first-layer wiring 3 penetrating in the thickness direction of the insulating layer 32.
4 and 34 are provided.
In the portion of the first-layer wiring 34, a short-circuit defect 42 exists between adjacent first-layer wirings 34, and a thermo-electromotive force generation defect 41 that generates a thermo-electromotive force by laser beam irradiation. Existing.

Since both of these types of defects have a fatal effect on the function of the integrated circuit, it is necessary to detect and take countermeasures as early as possible in the manufacturing process. Note that the short-circuit defect 42 is a defect formed by an etching residue, a mask defect or the like. On the other hand, the thermoelectromotive force generation defect 41 is a defect formed by deposition of silicon, chipping of wiring, presence of foreign matter, and the like. The probability that these two types of defects exist in the same wiring portion is usually low. However, the probability is extremely high in the early stages of development and after the change of the production line. It is extremely effective in performing it quickly.

Next, after a structure having a defect as shown in FIG. 12 is completed, at each stage of the manufacturing process,
A case where the inspection is performed by the nondestructive inspection apparatus of the first embodiment will be described. FIG. 13 shows a state where the inspection is performed at the same stage as FIG. FIG. 14 shows a state where the inspection is performed at a stage after the stage of FIG. This figure 1
At the stage of the manufacturing process 4, the insulating layer 32 is formed on the first-layer wiring 34, and the via 35 that penetrates the insulating layer 32 and is connected to the first-layer wiring 34 is formed. FIG.
5 shows a state where the inspection is performed in a stage after the stage of FIG. At the stage of the manufacturing process shown in FIG. 15, the via 3 penetrating through the insulating layer 32 formed on the first layer wiring 34
The second-layer wiring 37 is formed at the fifth position. FIG.
As shown in FIG. 15 to FIG.
When the laser beam 3 is applied to the laser beam 1, a thermoelectromotive force is generated from the thermoelectromotive force generation defect 41. As a result, a transient current flows along a current path 61 indicated by an arrow, and a magnetic field is generated. The defect position is identified by detecting this magnetic field with a magnetic field detector (not shown) arranged on the surface of the semiconductor device chip 4 as described above.

As described above, in the case where the presence or absence of a defect and the position of the defect are specified simply by irradiating a laser beam to the wiring layer of the semiconductor device chip in the course of the manufacturing process and detecting the magnetic field generated at the defective portion. Has the following problems.
That is, a huge cost and a large number of man-hours are required. The first reason is that in any of the inspections shown in FIGS. 13, 14, and 15, the thermoelectromotive force current flows only in an open circuit, so that the time during which the thermoelectromotive current flows is relatively short and the response time is short. What is needed is a fast magnetic field detector, ie, an expensive magnetic field detector. The second reason is that an inspection for detecting a defect in a wiring layer to be inspected (for example, the first layer wiring) is non-selectively performed at a stage after a manufacturing process in which the wiring layer is formed. Doing so is inefficient and requires a lot of man-hours.

Next, a twelfth embodiment capable of solving such a problem will be described. First, a brief description will be given to facilitate understanding of the twelfth embodiment. That is, in the twelfth embodiment, during the manufacturing process of a semiconductor device chip to be inspected (arranged on a wafer), a conductive layer for wiring on a layer above the inspection target wiring to be inspected is formed. The inspection is performed in a state where the conductive film (hereinafter referred to as a wiring conductive film) is attached to the entire surface on the front surface side of the wiring to be inspected. As described above, in a state where the conductive film for wiring is attached to the entire surface on the front surface side of the inspection target wiring, a thermal electromotive force generation defect formed in a part of the inspection target wiring and a short-circuit defect between the inspection target wirings are included. A closed circuit is formed. Thereby, the thermoelectromotive force current generated by heating the thermoelectromotive force generation defect with the laser beam causes the wiring in which the thermoelectromotive force is generated, the short-circuit defect, and the adjacent wiring connected to each other by the short-circuit defect. It is possible to flow into a closed circuit including the wiring conductive film attached to the entire surface of the inspection target wiring. Since the thermoelectromotive current flows through the closed circuit, it flows without attenuating for a relatively long time. Therefore, the detection of the magnetic field induced by the thermoelectromotive current is
Since it is possible to use a magnetic field detector having a relatively slow response speed, the magnetic field detector can be manufactured at a relatively low cost. Further, since the detection of the defect of the inspection target wiring can be reliably performed in one process, the efficiency is remarkably improved as compared with the case where the defect is detected at the stage of the non-selective manufacturing process.

Next, the spatial distribution of the generated magnetic field, which is an important point that makes the twelfth embodiment effective, will be described. The path of the thermoelectromotive current generated by irradiating the laser beam to the thermoelectromotive force generating defect includes the laser irradiation part, the wiring extending from both sides to the via and the short defect, and the entire upper surface of the via And a conductive film attached to the substrate. The current path flowing through the portion of the wiring is relatively narrow, and the magnetic field due thereto is also localized along the wiring. On the other hand, since the current path flowing through the wiring conductive film formed on the entire surface of the inspection target wiring of the semiconductor device chip is distributed over a relatively wide range, the magnetic field induced by the current also spreads over a wide range. The magnetic field generated in the current path of the wiring portion and the magnetic field generated in the current path of the wiring conductive film have directions that cancel each other out of the closed circuit loop as described above. Because the areas are different, they do not cancel out much. As described above, by inspecting in a state where a closed circuit is formed by the conductive film for wiring, the decay time of the thermoelectromotive force current is increased, and the magnetic field generated by the current flowing through the closed circuit does not cancel each other out so much. It is a point that the present invention is effective that both of these are compatible.

Next, a twelfth embodiment will be described with reference to the drawings. FIG. 16 is an explanatory diagram showing an example of the twelfth embodiment. FIG. 16 (A) is an explanatory diagram showing a state viewed from a longitudinal section, and FIG. 16 (B) is an explanatory diagram showing a plan view. FIG. 17 is an explanatory diagram showing a state of another example of the twelfth embodiment viewed from a longitudinal section. FIG.
As shown in (A), a thermoelectromotive force generation defect 41 is formed in the first-layer wiring 34 (the wiring to be inspected in the claims), and further, the first-layer wiring 34 adjacent to the first-layer wiring 34 is formed. A short defect 42 is formed therebetween. First layer wiring 34
In the upper layer, an insulating layer 32 and vias 35a and 35b penetrating the insulating layer 32 in the thickness direction are formed. And
On the upper layer of the insulating layer 32, a second-layer conductive film 36 for wiring (corresponding to a wiring conductive film in the claims) is formed on the entire front surface side of the semiconductor device chip 4 (in a wafer state). The first layer wiring 34 and the second layer wiring conductive film 36 are connected by the vias 35a and 35b. Inspection is performed in this state. Note that the wiring conductive film is formed by forming a pattern on the wiring conductive film and then removing a portion other than the pattern to form a wiring. Examples of the material include metal, silicide, and polycrystalline silicon. At least one of the following.

FIG. 16A shows a thermal electromotive force generation defect 41.
16B shows the moment when the laser beam 3 is irradiated from the cross section, and FIG. 16B shows the moment when the laser beam 3 is irradiated in a plan view, with only the minimum elements necessary for explanation. It is. When the laser beam 3 irradiates the thermoelectromotive force generation defect 41 in FIG. 16A, a thermoelectromotive force is generated, and FIG.
And a current path 61 indicated by an arrow in FIG.
The thermoelectromotive current flows in the directions indicated by 1, 612 and the like. The path of the thermoelectromotive current is a path 611 flowing on the first layer wiring side.
And a path 612 flowing on the side of the conductive film for the second-layer wiring. As shown in FIG. 16B, the current path 61
1 flows through the narrow wiring because the current flows through the patterned wiring (first-layer wiring 34), whereas the current flowing through the current path 612 is the entirety of the second-layer wiring conductive film 36. It flows over a wide area because it flows to spread. The magnetic field generated by the current flowing through the current path 611 and the current flowing through the current path 612 is qualitatively outside the closed loop formed by “current path 611-via 35b-current path 612-via 35a”. , They tend to negate each other. However, as described above, the current path 61
1 and 612, the generated magnetic field does not cancel out even outside the closed circuit loop. By using the configuration shown in FIG. It can be detected by a magnetic field detector arranged on the (front side of the wafer). Also,
The magnetic field at this time is generated by a current generated by a closed circuit, and thus has been generated for a relatively long time. Therefore, it can be detected by a magnetic field detector having a relatively slow response speed, that is, a relatively low cost. In FIG. 16, the front side of the wafer is drawn upward, and in FIG. 1, the back side of the wafer is drawn upward.

When the inspection is performed at the stage of the manufacturing process shown in FIGS. 13 to 15 described above, the thermoelectromotive force current has no current flowing as a closed circuit. Flows only as a transient current determined by the parasitic capacitance and the resistance of the wiring and the defective portion, and such a current flows only for a very short time. Therefore,
In order to detect a magnetic field generated only for a short time generated by such a current, an extremely fast response speed, that is, an expensive magnetic field detector is required. On the other hand, in the twelfth embodiment, since the generated magnetic field is generated for a relatively long time, the magnetic field can be detected by a magnetic field detector having a relatively slow response speed, that is, a low-cost magnetic field detector.

In the example shown in FIG. 17, unlike the example shown in FIG. 16, the insulating layer 32 is formed between the first-layer wiring 34 and the second-layer wiring conductive film 36 thereabove. Due to the short defect 422, the first-layer wiring 34 and the second-layer wiring conductive film 36 are electrically connected. In the example illustrated in FIG. 17, the closed circuit is formed as “current path 611-via 35b-current path 612-short defect 422”. Therefore, when the laser beam 3 is irradiated on the thermoelectromotive force generation defect 41 as in the case shown in FIG. 16, a thermoelectromotive force is generated,
The thermoelectromotive current flows in the directions indicated by the current paths 611, 612, and the like.

The current flowing through the current path 611 flows through a narrow region because it flows through the patterned wiring (the first layer wiring 34), whereas the current flowing through the current path 612 flows through the second layer. Since it flows so as to spread over the entire wiring conductive film 36, it flows over a wide area. In addition, the current path 6
The magnetic field generated by the current flowing through the current path 611 and the current flowing through the current path 612 is qualitatively described as “current path 611-via 35”.
Outside the closed circuit loop formed by "b-current path 612-short defect 422", the directions are mutually canceling. However, as described above, the current paths 611, 61
2, the generated magnetic field does not cancel out much even outside the closed circuit loop, and by using the configuration shown in FIG. Can be detected by a magnetic field detector arranged on the front side of the magnetic field. Further, the magnetic field at this time is generated by a current generated by a closed circuit, and thus is generated for a relatively long time. Therefore, it can be detected by a magnetic field detector having a relatively slow response speed, that is, a relatively low cost.
In the example shown in FIG. 17, the short defect 422 is
A pattern is formed on the second-layer wiring conductive film 36 so that the second
After the layer wiring is formed, it does not necessarily become a short-circuit defect. However, since the short-circuit defect 422 exists, a closed circuit is formed and the thermo-electromotive force generation defect 41 can be detected. In the examples shown in FIGS. 16 and 17, the first-layer wiring formed on the silicon substrate portion has been described as the wiring to be inspected, but the wiring to be inspected is limited to the first-layer wiring. It is needless to say that wiring of another hierarchy may be used instead.

As described above, according to the twelfth embodiment, by selecting a manufacturing process to be inspected,
A non-destructive inspection device and a non-destructive inspection device capable of detecting a thermo-electromotive force generation defect using a magnetic field detector having a low response speed, that is, a low-cost magnetic field detector, are possible. A destructive inspection method can be realized. In addition, since the manufacturing process for performing the inspection can be performed in the middle of the semiconductor device manufacturing process, the inspection can be performed efficiently while the added value of the semiconductor device is small. As a result, it is possible to contribute to improvement in productivity and reliability of the semiconductor device.

[0119]

As described above, the present invention comprises a light source for generating a laser beam, and a laser beam generating means for generating a laser beam from the laser beam generated by the light source and irradiating the semiconductor device chip with the laser beam. An apparatus for non-destructively inspecting the semiconductor device chip, wherein the intensity of a magnetic field induced by the generation of a thermoelectromotive current in the semiconductor device chip by the irradiation of the laser beam by the laser beam generating means is detected. The semiconductor device chip is provided with a magnetic field detecting means, and the semiconductor device chip is inspected for a defect based on a detection result of the magnetic field detecting means. In the nondestructive inspection apparatus of the present invention, when the laser beam generated by the laser beam generating means is applied to a defective portion on the semiconductor device chip and the defective portion is heated, a current transiently flows due to thermoelectromotive force, As a result, a magnetic field is generated. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

The present invention also provides a method for non-destructively inspecting a semiconductor device chip by generating a laser beam, generating a laser beam from the laser beam and irradiating the semiconductor device chip with the laser beam. Detecting the intensity of the magnetic field induced by the generation of a thermoelectromotive force in the semiconductor device chip by the irradiation of the beam, and inspecting the presence or absence of a defect in the semiconductor device chip based on the detected intensity of the magnetic field. . In the nondestructive inspection method of the present invention,
When a laser beam is applied to a defective portion on a semiconductor device chip to heat the defective portion, a current flows transiently due to a thermoelectromotive force, and as a result, a magnetic field is generated. By detecting the intensity of the magnetic field, a defect included in the semiconductor device chip is detected.

That is, in the present invention, the current generated by the thermoelectromotive force is not directly measured as in the prior art, but the magnetic field induced by the current is measured. No need to
There is no need to select a bonding pad and connect a current change detector to the bonding pad, which has been required in the past, so that the number of man-hours and cost required for inspection can be greatly reduced. In addition, since the defect of the semiconductor device chip can be detected before the bonding pad is formed on the semiconductor device chip, the inspection can be performed at a more upstream stage before the bonding pad is completed in the semiconductor manufacturing process. In comparison, the feedback of the inspection result can be performed at a more upstream stage of the semiconductor manufacturing process.

Further, in the nondestructive inspection apparatus of the present invention, one or a plurality of current circuits each having one end electrically connected to a predetermined location on a semiconductor device chip are provided, and a magnetic field detecting means is provided near the current circuit. It is characterized by being arranged. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows from the semiconductor device chip to the current circuit to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Further, according to the nondestructive inspection method of the present invention, one or more current circuits having one end electrically connected to a predetermined location on a semiconductor device chip are provided, and a magnetic field generated when a current flows through the current circuit is generated. Is detected. In the nondestructive inspection method according to the present invention, when a laser beam is applied to a defective portion on a semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force.
This current flows from the semiconductor device chip to the current circuit to induce a magnetic field. Then, a defect included in the semiconductor device chip is detected by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is extracted by a current circuit provided outside the semiconductor device chip. For this reason, it is possible to detect the magnetic field by setting the path of this current circuit so that a strong magnetic field is generated by the current flowing through the current circuit, and the magnetic field induced by the current transiently flowing only inside the chip is reduced. Defects can be detected with high sensitivity even when they are extremely small and difficult to detect. According to the present invention, the current circuit is connected to, for example, the bonding pad, so that the inspection is performed after the bonding pad is formed.

Further, in the nondestructive inspection apparatus of the present invention, all of the bonding pads or the electrodes are electrically connected to all of the bonding pads or the electrodes exposed on the front surface side of the semiconductor device chip so that all of the bonding pads or the electrodes are at the same potential. Provide a conductive thin film on the surface side of the semiconductor device chip,
The magnetic field detecting means is arranged near the semiconductor device chip. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows through a closed circuit formed by the bonding pad or electrode of the semiconductor device chip, the wiring including the defective portion, and the conductive thin film to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Further, in the nondestructive inspection method of the present invention, all of the bonding pads or the electrodes are electrically connected to all of the bonding pads or the electrodes exposed on the surface side of the semiconductor device chip, and all of the bonding pads or the electrodes are at the same potential. Provide a conductive thin film on the surface side of the semiconductor device chip,
The magnetic field detecting means is arranged near the semiconductor device chip. In the nondestructive inspection method of the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force. This current flows through a closed circuit formed by the bonding pad or electrode of the semiconductor device chip, the wiring including the defective portion, and the conductive thin film to induce a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is caused to flow through a closed circuit formed by the wiring including the defective portion and the conductive thin film in the semiconductor device chip. Therefore, the conductive thin film can be connected to the electrode exposed on the surface of the semiconductor device before the bonding pad is formed, so that the inspection can be performed before the formation of the bonding pad. Further, since the current flowing through the closed circuit flows for a relatively long time, a relatively low-speed magnetic field detecting means, that is, a low-cost magnetic field detecting means can be employed. In addition, since the conductive thin film may be connected to the bonding pad or the electrode, no special jig is required, and the operation can be performed efficiently.

Further, in the nondestructive inspection apparatus of the present invention, a conductive film for wiring electrically connected to a wiring to be inspected to be inspected of the semiconductor device chip is formed on the entire front surface side of the semiconductor device chip, and the magnetic field detection is performed. The means is arranged near the semiconductor device chip. In the nondestructive inspection apparatus according to the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to thermoelectromotive force. This current flows through a closed circuit formed by the inspection target wiring including the defective portion and the wiring conductive film, and induces a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Further, in the nondestructive inspection method according to the present invention, a conductive film for wiring electrically connected to a wiring to be inspected to be inspected for the semiconductor device chip is formed on the entire front surface side of the semiconductor device chip. The means is arranged near the semiconductor device chip. In the nondestructive inspection method of the present invention, when a laser beam generated by the laser beam generating means is irradiated on a defective portion on the semiconductor device chip and the defective portion is heated, a current flows transiently due to a thermoelectromotive force. This current flows through a closed circuit formed by the inspection target wiring including the defective portion and the wiring conductive film, and induces a magnetic field. The magnetic field detecting means detects a defect included in the semiconductor device chip by detecting the intensity of the magnetic field.

Therefore, in the present invention, a current transiently flowing inside the semiconductor device chip is caused to flow through a closed circuit formed by the wiring including the defective portion and the wiring conductive film in the semiconductor device chip. Therefore, the conductive film for wiring can be connected to the wiring to be inspected formed in the semiconductor device, so that the inspection can be performed during the manufacturing process, and while the added value of the semiconductor device is small, Inspection can be performed efficiently. Further, since the current flowing through the closed circuit flows for a relatively long time, a relatively low-speed magnetic field detecting means, that is, a low-cost magnetic field detecting means can be employed.

[Brief description of the drawings]

FIG. 1A is a configuration diagram showing a first embodiment of the present invention, and FIG. 1B is a configuration diagram showing a fifth embodiment of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment of the present invention.

FIG. 4 is a configuration diagram showing a fourth embodiment of the present invention.

FIG. 5 is a bottom view showing in detail the periphery of a chip to be inspected according to a fifth embodiment;

FIG. 6 is a configuration diagram showing a current path focusing board constituting a sixth embodiment of the present invention.

FIG. 7 is a configuration diagram showing a current path focusing board constituting a seventh embodiment of the present invention.

FIG. 8 is a configuration diagram showing an eighth embodiment of the present invention.

FIG. 9 is a configuration diagram showing a ninth embodiment of the present invention.

FIG. 10 is a configuration diagram showing a tenth embodiment of the present invention.

FIG. 11 is a configuration diagram showing an eleventh embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a configuration example of a semiconductor device chip in a wafer state during a manufacturing process.

FIG. 13 is an explanatory diagram showing a state where the inspection is performed at the same stage as in FIG.

FIG. 14 is an explanatory diagram showing a state where an inspection is performed at a stage after the stage of FIG. 12;

FIG. 15 is an explanatory diagram showing a state where the inspection is performed at a stage after the stage of FIG. 14;

FIG. 16 is an explanatory view showing an example of the twelfth embodiment, wherein FIG. 1 (A) is an explanatory view showing a state viewed from a longitudinal section, and FIG. 1 (B) is an explanatory view showing a plan view. .

FIG. 17 is an explanatory view showing another example of the twelfth embodiment as viewed from a longitudinal section.

FIG. 18 is a configuration diagram illustrating an example of a conventional nondestructive inspection device.

FIG. 19 is a configuration diagram illustrating an example of a conventional nondestructive inspection apparatus.

FIG. 20 is a perspective view showing a configuration of a semiconductor device chip serving as a model only for a portion related to the present invention.

FIG. 21 is a conceptual diagram showing a relationship between laser beam scanning and an acquired image.

[Explanation of symbols]

1 laser generator, 2 optical system, 3 laser beam, 4 semiconductor device chip, 5 magnetic field detector,
55 SQUID, 6 Control / image processing system, 7
Image display device, 8 ... heat insulating material, 9 ... liquid nitrogen, 10 ...
Magnetic shield material, 11 Cooler, 12 Vacuum pump, 13 Glass material, 14 Bonding pad,
15 ... prober, 16 ... current path focusing board, 17
...... Current path focusing board, 30 ... conductive thin film, 32 ...
... insulating layer, 34 ... first layer wiring (wiring to be inspected), 3
5, 35a, 35b ... via, 36 ... second layer wiring conductive film (wiring conductive film), 131 ... current change detector,
106: control / image processing system, 115: prober, 3
01 to 309: Non-destructive inspection device.

Claims (54)

(57) [Claims] A light source for generating a laser beam; and a laser beam generating means for generating a laser beam from the laser beam generated by the light source and irradiating the semiconductor device chip with the laser beam. An apparatus for inspecting, comprising: magnetic field detecting means for detecting the intensity of a magnetic field induced by the generation of a thermoelectromotive force in the semiconductor device chip by irradiation of the laser beam by the laser beam generating means; A non-destructive inspection device for inspecting the presence or absence of a defect in the semiconductor device chip based on a detection result of the means. 2. A laser beam scanning means for scanning the laser beam generated by the laser beam generating means to change an irradiation position of the laser beam on the semiconductor device chip. Non-destructive inspection device as described. 3. The semiconductor device chip is fixed in a state where a relative positional relationship between an irradiation point irradiated with the laser beam by the laser beam generation means and a detection point at which magnetism is detected by the magnetic field detection means is fixed. Laser beam scanning means for changing an irradiation position of the laser beam generated by the laser beam generating means on the semiconductor device chip by moving the laser beam with respect to the irradiation point and the detection point. Item 1. The nondestructive inspection device according to Item 1. 4. The relative positional relationship between the irradiation point and the detection point is set such that the magnetism detected at the detection point by the magnetic field detection means has a maximum value. Item 3. The nondestructive inspection device according to Item 3. 5. An image display surface corresponding to the irradiation position of the laser beam, wherein the intensity of the magnetic field detected by the magnetic field detection unit is converted into luminance while changing the irradiation position of the laser beam by the laser beam scanning unit. 5. The non-destructive inspection apparatus according to claim 2, further comprising image display means for setting a luminance at an upper position to the luminance and displaying a scanning magnetic field image. 6. A scanning laser microscope for photographing the semiconductor device chip, and second image display means for combining and displaying the scanning magnetic field image and the scanning laser microscope image acquired by the scanning laser microscope. The nondestructive inspection device according to claim 5, wherein: 7. The laser beam generating means irradiates the laser beam only to a specific one of the plurality of semiconductor device chips arranged in close proximity on a wafer, and 2. The non-destructive inspection apparatus according to claim 1, wherein the laser beam is applied to the entire inspection area of the device chip at a time. 8. The nondestructive inspection apparatus according to claim 1, wherein the wavelength of the laser beam is a wavelength that transmits the silicon substrate and does not generate a photoexcitation current. . 9. The wavelength of the laser beam is 1200.
9. The non-destructive inspection device according to claim 1, wherein the length is longer than nm. 10. The wavelength of the light of the laser beam is about 13
9. The non-destructive inspection apparatus according to claim 1, wherein the non-destructive inspection apparatus has a thickness of 00 nm. 11. The semiconductor device chip according to claim 11, wherein the laser beam generating means irradiates the laser beam to a back surface of the semiconductor device chip, and the magnetic field detecting means is disposed on a front surface of the semiconductor device chip. The nondestructive inspection device according to 8, 9, or 10. 12. The semiconductor device chip according to claim 1, wherein one or more current circuits having one end electrically connected to a predetermined location on the semiconductor device chip are provided, and the magnetic field detecting means is arranged near the current circuit. Item 12. The nondestructive inspection device according to any one of Items 1 to 11. 13. The current circuit according to claim 12, wherein the plurality of current circuits are disposed such that specific locations are close to each other, and the magnetic field detecting means is disposed close to the specific location. Non-destructive inspection device as described. 14. A current circuit having one end electrically connected to a predetermined location on the semiconductor device chip and the other end electrically connected to a location different from the predetermined location on the semiconductor device chip. 12. The nondestructive inspection apparatus according to claim 1, wherein a plurality of magnetic field detection units are provided near the current circuit. 15. The non-destructive inspection device according to claim 14, wherein the plurality of current circuits have a common connection point, and the magnetic field detection means is arranged close to the common connection point. 16. The nondestructive inspection apparatus according to claim 12, wherein the predetermined portion is a bonding pad. 17. The semiconductor device, comprising: a conductive thin film that is electrically connected to all of the bonding pads or electrodes exposed on the surface side of the semiconductor device chip to make all of the bonding pads or the electrodes the same potential. The non-destructive inspection apparatus according to any one of claims 1 to 10, wherein the non-destructive inspection apparatus is provided on a front surface side of the chip, and the magnetic field detecting means is arranged near the semiconductor device chip. 18. The laser beam generating means is configured to irradiate the laser beam to a back side of the semiconductor device chip, and the magnetic field detecting means is arranged on a front side of the semiconductor device chip. The nondestructive inspection device according to claim 17, wherein: 19. The conductive thin film is configured to transmit the laser beam, and the laser beam generating means irradiates the surface of the semiconductor chip with the laser beam via the conductive thin film. 18. The non-destructive inspection apparatus according to claim 17, wherein the magnetic field detecting means is arranged on a back side of the semiconductor device chip. 20. A wiring conductive film, which is electrically connected to a wiring to be inspected as an inspection target of the semiconductor device chip, is formed on the entire front surface side of the semiconductor device chip, and the magnetic field detecting means is provided near the semiconductor device chip. The nondestructive inspection device according to claim 1, wherein the inspection device is arranged. 21. An insulating layer is formed between the conductive film for wiring and the wiring to be inspected, and conduction between the conductive film for wiring and the wiring to be inspected is provided through the insulating layer. 21. The non-destructive inspection apparatus according to claim 20, wherein the via is formed by connecting the conductive film for wiring and the wiring to be inspected. 22. The laser beam generating means is configured to irradiate the laser beam on the back side of the semiconductor device chip, and the magnetic field detecting means is arranged on the front side of the semiconductor device chip. 22. The non-destructive inspection device according to claim 20, wherein: 23. The non-destructive method according to claim 20, wherein the wiring conductive film is formed by removing portions other than the pattern formed on the wiring conductive film. Inspection equipment. 24. The nondestructive inspection apparatus according to claim 20, wherein the conductive film for wiring is made of at least one of metal, silicide, and polycrystalline silicon. . 25. The nondestructive inspection apparatus according to claim 1, wherein said magnetic field detection means is constituted by a superconducting quantum interference device. 26. The nondestructive inspection apparatus according to claim 25, comprising three superconducting quantum interference devices, wherein the magnetic field detection surfaces of each superconducting quantum interference device are oriented in directions independent of each other. 27. The nondestructive inspection apparatus according to claim 1, wherein the semiconductor device chips are arranged on a wafer. 28. A method of non-destructively inspecting a semiconductor device chip by generating a laser beam, generating a laser beam from the laser beam and irradiating the semiconductor device chip with the laser beam, A non-destructive inspection method, comprising detecting the intensity of a magnetic field induced by the generation of a thermoelectromotive current in the semiconductor device chip, and inspecting the semiconductor device chip for a defect based on the detected intensity of the magnetic field. 29. The nondestructive inspection method according to claim 28, wherein the laser beam is scanned to change an irradiation position of the laser beam on the semiconductor device chip. 30. The semiconductor device chip is moved with respect to the irradiation point and the detection point in a state where the relative position between the irradiation point where the laser beam is irradiated and the detection point where the magnetic field is detected is fixed. 29. The nondestructive inspection method according to claim 28, wherein the irradiation position of the laser beam on the semiconductor device chip is changed by causing the irradiation. 31. The method according to claim 30, wherein the relative positional relationship between the irradiation point and the detection point is set such that the magnetism detected at the detection point has the largest value. Destructive inspection method. 32. Convert the detected magnetic field intensity while changing the irradiation position of the laser beam into luminance, and set the luminance at a position on the image display surface corresponding to the irradiation position of the laser beam to the luminance. 32. The nondestructive inspection method according to claim 29, wherein the scanning magnetic field image is displayed. 33. The nondestructive inspection method according to claim 32, wherein a scanning laser microscope image of the semiconductor device chip is acquired, and the scanning magnetic field image and the scanning laser microscope image are combined and displayed. 34. The laser beam is irradiated only to a specific one of the plurality of semiconductor device chips arranged close to each other on a wafer, and the entire inspection area of the specific semiconductor device chip is irradiated. 3. The method according to claim 2, wherein the laser beam is irradiated at a time.
8. The nondestructive inspection method according to 8. 35. The nondestructive inspection method according to claim 28, wherein the wavelength of the laser beam is a wavelength that passes through a silicon substrate and does not generate a photoexcitation current. . 36. The laser beam having a light wavelength of 120.
The nondestructive inspection method according to any one of claims 28 to 35, wherein the length is longer than 0 nm. 37. The light wavelength of the laser beam is about 13
The non-destructive inspection method according to any one of claims 28 to 35, wherein the thickness is 00 nm. 38. The non-destructive method according to claim 35, wherein the laser beam is applied to the back side of the semiconductor device chip, and the magnetic field intensity is detected at the front side of the semiconductor device chip. Inspection methods. 39. One or more current circuits each having one end electrically connected to a predetermined location on the semiconductor device chip, and detecting a strength of a magnetic field generated by a current flowing through the current circuit. The nondestructive inspection method according to any one of claims 28 to 38. 40. The apparatus according to claim 39, wherein the plurality of current circuits are arranged so that specific locations are close to each other, and detect the intensity of a magnetic field generated near the specific location. Non-destructive inspection method. 41. One current circuit having one end electrically connected to a predetermined location on the semiconductor device chip and the other end electrically connected to a location different from the predetermined location on the semiconductor device chip. 39. The non-destructive inspection method according to claim 28, wherein a plurality of the detection circuits are provided, and the intensity of a magnetic field generated by a current flowing through the current circuit is detected. 42. The non-destructive inspection method according to claim 41, wherein the plurality of current circuits have a common connection point, and detect the intensity of a magnetic field generated near the common connection point. 43. The nondestructive inspection method according to claim 39, wherein the predetermined portion is a bonding pad. 44. A conductive thin film electrically connected to all of the bonding pads or electrodes exposed on the front side of the semiconductor device chip to make all of the bonding pads or the electrodes the same potential. The non-destructive inspection method according to any one of claims 28 to 37, wherein the non-destructive inspection method is provided on a surface side of a chip, and the magnetic field detecting means is arranged near the semiconductor device chip. 45. The laser beam generating means is configured to irradiate the laser beam to the back side of the semiconductor device chip, and the magnetic field detecting means is arranged on the front side of the semiconductor device chip. The nondestructive inspection method according to claim 44, wherein: 46. The conductive thin film is configured to transmit the laser beam, and the laser beam generating means irradiates the surface of the semiconductor chip with the laser beam via the conductive thin film. The non-destructive inspection method according to claim 44, wherein the magnetic field detecting means is arranged on a back side of the semiconductor device chip. 47. A wiring conductive film that is electrically connected to a wiring to be inspected as an inspection target of the semiconductor device chip is formed on the entire front surface side of the semiconductor device chip, and the magnetic field detecting means is provided near the semiconductor device chip. The non-destructive inspection method according to any one of claims 28 to 37, wherein the non-destructive inspection method is arranged. 48. An insulating layer is formed between the conductive film for wiring and the wiring under test, and conduction between the conductive film for wiring and the wiring under test is provided through the insulating layer. 48. The non-destructive inspection method according to claim 47, wherein the via is formed by connecting the conductive film for wiring and the wiring to be inspected. 49. The laser beam generating means is configured to irradiate the laser beam to the back side of the semiconductor device chip, and the magnetic field detecting means is arranged on the front side of the semiconductor device chip. The nondestructive inspection method according to claim 47 or 48, wherein: 50. The non-destructive method according to claim 47, wherein the wiring conductive film is formed by removing a portion other than the pattern formed on the wiring conductive film. Inspection equipment. 51. The nondestructive inspection method according to claim 47, wherein the conductive film for wiring is made of at least one of a metal, silicide, and polycrystalline silicon. . 52. The nondestructive inspection method according to claim 28, wherein the intensity of the magnetic field is detected by a superconducting quantum interference device. 53. The method according to claim 52, wherein the intensity of the magnetic field is detected by using three superconducting quantum interference devices, and the magnetic field detection surfaces of each superconducting quantum interference device are directed in directions independent of each other. Non-destructive inspection method. 54. The nondestructive inspection method according to claim 28, wherein said semiconductor device chips are arranged on a wafer.