JP3079818B2 - Plasma processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a waveguide window into which a microwave is introduced, a plasma generation chamber into which the microwave and a plasma source gas are introduced, and a plasma generation chamber coaxially surrounding the plasma generation chamber. An excitation solenoid that forms an electron cyclotron resonance magnetic field; a sample chamber that includes a substrate holder that communicates the plasma generation chamber with the internal space and holds the substrate with its film-forming surface facing the plasma generation chamber;
A cylindrical anti-blocking plate that covers the inner wall surface of the sample chamber and prevents the thin film substance from adhering to the inner wall surface during film formation on the substrate; An ECR type plasma processing apparatus including a gas introduction ring for ejecting the reactive gas introduced into the space to the inside of the deposition preventing plate, and a gas introduction pipe from an external reactive gas supply source to the gas introduction ring,
Alternatively, a plasma generation chamber into which the microwave, the plasma raw material gas, and the reactive gas are introduced, an excitation solenoid that coaxially surrounds the plasma generation chamber, and forms an electron cyclotron resonance magnetic field with the microwave in the plasma generation chamber; The chamber communicates with the internal space, and the sample chamber contains a substrate holder that holds the substrate with its film-forming surface facing the plasma generation chamber, and the inner wall of the sample chamber covers the inner wall during film formation on the substrate. A cylindrical anti-adhesion plate for preventing the adhesion of thin film material, and a gas formed in an annular shape and arranged coaxially with the plasma generation chamber and ejecting a reactive gas introduced into the annular internal space into the plasma generation chamber. In an ECR plasma processing apparatus including an introduction ring and a gas introduction pipe extending from an external reactive gas supply source to a gas introduction ring, a plurality of substrates are continuously processed. Processed number-independent deposition rate of the time, is the etching rate, or the apparatus internal to an apparatus configuration which can achieve the cleaning rate improved when dry cleaning.

[0002]

2. Description of the Related Art Among insulating films covering wiring and the like formed on a substrate, a silicon oxide film is often formed as an interlayer insulating film in a semiconductor device manufacturing process.
The silicon oxide film can be formed at a low temperature, the internal stress of the film is small, the etching rate is small, the film thickness distribution is good, the step coverage is good, the water permeability is excellent, etc. The film forming apparatus is required to improve the film forming speed while maintaining good film characteristics.

As a film formation method satisfying these conditions, electron cyclotron resonance plasma CVD (hereinafter, referred to as E)
This is called CR plasma CVD. ) There is a law. FIG. 10 shows EC
An example of an R plasma CVD apparatus configuration is shown. When a thin film is formed on the surface of the substrate 10, the microwave traveling inside the waveguide 1 is introduced into the plasma generation chamber 3 through the waveguide window 2, and the plasma generation chamber 3 is excited by the excitation solenoid 4.
By forming a magnetic field therein, the plasma source gas introduced from the first gas introduction pipe 5 is turned into plasma using electron cyclotron resonance. The excitation solenoid 4 forms a divergent magnetic field toward the sample chamber 7 connected to the plasma generation chamber 3 via the plasma extraction window 6, and the plasma in the plasma generation chamber 3 is transmitted to the sample chamber 7 by the divergent magnetic field. Drawn out. In this example, the sample chamber 7 is made of a cylinder 2 of different diameter in order to prevent the thin film substance from adhering to the inner wall.
It is covered by a deposition-preventing plate 24 having a stacked configuration. A plasma flow drawn from the plasma generation chamber 3 is supplied from a reactive gas supply source 30 to a second gas introduction pipe 8 and a ring-shaped gas introduction ring arranged outside the small-diameter cylinder of the deposition-preventing plate 24 to prevent contamination. Reacting with the introduced reactive gas through the substrate 22, it reaches the substrate 10 placed on the substrate holder 9, and a film can be formed on the substrate 10. ECR
In the plasma CVD apparatus, as shown in this example, a second excitation solenoid (hereinafter referred to as a sub-solenoid 13) is disposed coaxially with the excitation solenoid 4 and at an axial position sandwiching the substrate. A current is applied to the solenoid 13 so as to generate a magnetic field in a direction opposite to that of the exciting solenoid 4, so that both magnetic fields rapidly expand outward in the vicinity of the substrate, that is, a so-called cusp magnetic field is formed. Cusp magnetic field type ECR for uniform film thickness distribution
The use of plasma CVD equipment is increasing. Reference numeral 11 in the drawing denotes a high-frequency power supply, which applies a high-frequency voltage to the substrate 10 through the substrate holder 9 to generate a negative potential with respect to the ground (with respect to the sample chamber) on the surface of the substrate 10, thereby providing unevenness. The planarization of the interlayer insulating film covering the aluminum wiring in the state and the improvement of the step coverage of the final protective insulating film are performed.
Reference numeral 14 denotes a heater power supply for supplying heating power to the heater embedded in the substrate holder 9 to heat the substrate 10 to a predetermined temperature. Reference numeral 15 denotes a vacuum gauge, which measures the gas pressure in the sample chamber 7 and inputs the measured output to a feedback circuit 16 to change the cross-sectional area of the flow path of the variable orifice 17 so that the inside of the sample chamber 7 is changed. The gas pressure is maintained at a predetermined value.

According to this method, a high-density plasma can be obtained under a low pressure of 10 ^-3 to 10 ^-4 Torr, and a silicon oxide film having a small internal stress and a high acid resistance can be formed without heating the substrate 10. can do. Also, dozens of mTorr
In the pressure region of r, a high-quality silicon oxide film can be formed on the low-temperature substrate also by the composite plasma of the high-frequency plasma generated by the high-frequency power applied to the substrate holder 9 and the ECR plasma formed in the plasma generation chamber.

[0005] Similarly, a silicon nitride film can be formed as an insulating film. By using sulfur hexafluoride as an etching gas, polycrystalline silicon can be etched. The EC configured as described above
When the R plasma CVD apparatus is used as a film forming apparatus, dry cleaning is more advantageous than wet cleaning in terms of operation of the apparatus.

[0006]

However, in the above-mentioned conventional silicon oxide film formation, if continuous film formation is performed, the film quality such as internal stress, etching rate, and water resistance of the film changes. was there. In addition, in the above-described conventional silicon nitride film formation, there is a problem that the refractive index decreases when continuous film formation is performed.

Further, in the etching of polycrystalline silicon, there is a problem that the etching rate changes when continuous processing is performed. In addition, dry cleaning has a problem that a low-temperature portion of the inner wall of the apparatus is slow. An object of the present invention is to maintain the initial film forming rate and etching rate without causing the above-described problems even when a plurality of substrates are continuously processed, and to increase the cleaning rate during dry cleaning inside the apparatus. It is to provide a device configuration that performs

[0008]

According to the present invention, there is provided a plasma generation chamber into which a microwave and a plasma source gas are introduced, and a plasma generation chamber coaxially surrounding the plasma generation chamber. An excitation solenoid that forms a cyclotron resonance magnetic field, a sample chamber that includes a substrate holder that communicates the plasma generation chamber with the internal space and holds the substrate with its film-forming surface facing the plasma generation chamber, and an inner wall surface of the sample chamber. And a cylindrical anti-blocking plate for preventing the thin film substance from adhering to the inner wall surface during film formation on the substrate, and an annularly formed and coaxially disposed with the anti-shielding plate and introduced into the annular internal space. An ECR type plasma processing apparatus including a gas introduction ring for ejecting a reactive gas into the inside of the deposition-preventing plate and a gas introduction pipe extending from an external reactive gas supply source to the gas introduction ring, or A plasma generation chamber into which the microwave, the plasma raw material gas, and the reactive gas are introduced; an excitation solenoid that coaxially surrounds the plasma generation chamber and forms an electron cyclotron resonance magnetic field with the microwave in the plasma generation chamber; A sample chamber that contains a substrate holder that communicates with the internal space and holds the substrate with its film-forming surface facing the plasma generation chamber, and a thin film that covers the inner wall surface of the sample chamber and forms a film on the inner wall surface during film formation on the substrate. A cylindrical anti-adhesion plate for preventing the attachment of substances, and a gas introduction ring formed in an annular shape and arranged coaxially with the plasma generation chamber and for emitting a reactive gas introduced into the annular internal space into the plasma generation chamber. An ECR type plasma processing apparatus comprising a gas introduction pipe extending from an external reactive gas supply source to a gas introduction ring, a gas-proof plate, a gas introduction ring, and gas in the gas introduction pipe. A device which has constant temperature control means comprising a heating means and a temperature control means in the vicinity of the inlet ring, and which maintains a constant temperature in the range of 50 to 150 ° C. during film formation on the substrate or dry cleaning inside the apparatus, respectively; I do.

Here, the vicinity of the gas introduction ring of the deposition plate, the gas introduction ring, and the gas introduction pipe are 50 to 150, respectively.
The heating means for raising the temperature to a constant temperature in the range of ° C. is an aluminum casting heater in which a sheathed heater is cast in an aluminum ingot, or a fluid heater for passing a heating fluid through a circulation pipe.

[0010]

The reactive gas is activated by the plasma, but the active species formed in the gas phase cause a particle-particle interaction or a particle-wall interaction until they reach the substrate.
When the plasma processing is continuously performed, the temperature of the inner wall of the apparatus surrounding the generation region of the active species (in the apparatus of FIG.
(The temperature of the small diameter side cylinder and the temperature of the gas introduction ring 22 in close proximity to the small diameter side cylinder) (FIG. 11). When the temperature of the inner wall of the device changes, due to the temperature dependence of chemisorption,
The degree of deactivation of the active species due to the particle-wall interaction changes, which also affects the concentration of the active species in the gas phase. Therefore, the film forming or etching characteristics fluctuate due to the continuous processing. Further, the speed of the dry cleaning can be increased by increasing the temperature of the inner wall of the apparatus due to the temperature dependence of the reaction rate.

Therefore, as a device having a heating means and a temperature control means in a gas introduction pipe for introducing a reactive gas, a gas introduction ring and a deposition-preventing plate, by controlling them at a constant temperature, the film formation or etching characteristics can be improved. And the speed of dry cleaning can be increased. In addition, the constant temperature control is a temperature control type aluminum casting heater in which an aluminum casting heater in which a sheathed heater is cast into an aluminum ingot and a temperature control means for controlling the temperature of the object to be heated are integrated, or the temperature is controlled. This is achieved by circulating the fluid.

[0012]

Next, a first embodiment of the present invention will be described with reference to the accompanying drawings. First, the configuration of an ECR plasma CVD apparatus used in this embodiment will be described with reference to FIG. A waveguide 1 connected to a microwave power supply (not shown) is attached to a plasma generation chamber 3 via a waveguide window 2.
An excitation solenoid 4 is provided around the plasma generation chamber 3, and a first gas introduction pipe 5 for introducing a plasma source gas into the plasma generation chamber 3 is provided. A plasma extraction window 6 is provided at a lower portion of the plasma generation chamber 3, and a plasma flow is extracted to the sample chamber 7 through the plasma extraction window 6. Sample room 7
Is provided with a second gas introduction pipe 8 for introducing a reactive gas, and a substrate holder 9 is provided inside the sample chamber 7 at a location downstream of the introduction port of the gas introduction pipe 8.
On the back side of the substrate holder 9, there is a sub-solenoid 13 arranged coaxially with the excitation solenoid 4. Substrate holder 9
Is connected to a high-frequency power supply 11, and an exhaust pipe 1 connected to a vacuum pump (not shown) is provided below the substrate holder 9.
2, a valve 12a having a fixed opening and a variable orifice 17 having a variable opening, which are connected in parallel to adjust the gas pressure in the sample chamber 7. Reference numeral 15 in the drawing denotes a vacuum gauge, and 16 denotes a feedback circuit, which changes the opening of the variable orifice 17 so that the gas pressure in the sample chamber 7 maintains a predetermined value. The pressure was adjusted in the sample chamber 7
It can be performed while introducing an oxygen source gas, a nitrogen gas, or an inert gas to be introduced into the plasma generation chamber 3 from the middle of the exhaust pipe into the exhaust pipe, or by adjusting the conductance of a vacuum pump.

The second gas introduction pipe 8 for introducing the reactive gas is provided with a preheating mechanism 21 in which a heating means comprising an aluminum cast heater and a temperature controller constituted by a feedback circuit as a temperature control means are unitized. The temperature of the second gas introduction pipe 8 at the outlet (apparatus side) of the preheating mechanism 21 is kept constant. The second gas introduction pipe 8 is connected to the gas introduction ring 22 inside the sample chamber 7 so that the reactive gas can be introduced into the sample chamber 7 with a gas amount evenly distributed in the circumferential direction. This gas introduction ring 22 is heated to a certain temperature,
The constant temperature control unit 23 for holding is constituted by a temperature control type aluminum casting heater described below or a unit for circulating a fluid whose temperature is controlled. In this embodiment, the deposition prevention plate 24 is also maintained at the same constant temperature as the gas introduction ring 22 by the constant temperature control unit 23.

FIG. 2 shows an example of the configuration of the preheating mechanism 21, and FIGS. 2 and 3 show examples of the configuration of the constant temperature control unit 23. FIG.
Unit has a thermocouple attached to an aluminum cast heater,
A temperature controller is constituted by a feedback circuit to which a temperature signal measured by a thermocouple is input, and is controlled at a constant temperature. In the unit of FIG. 3, a heater and a thermocouple are attached to the fluid circulation system, and a temperature controller is configured by a feedback circuit.
It circulates a fluid at a constant temperature (for example, trade name-Fluorinert), and can be heated up to 140 ° C.

An embodiment of a method for manufacturing a silicon oxide film using this cusp magnetic field type ECR plasma CVD apparatus will be described. The microwave introduced through the waveguide 1 and the waveguide window 2 has a frequency of 2.45 GHz and a power of 0.5 to 1.5 kW, and a magnetic flux density of 875 gauss is supplied into the plasma generation chamber 3 by the excitation solenoid 4. Form. Under these conditions, O ₂ gas of 16 to 250 CCM is introduced into the plasma generation chamber 3 from the first gas introduction pipe 5 to generate plasma. This plasma is drawn into the sample chamber 7 by a divergent magnetic field formed by the excitation solenoid 4, and while the silane gas introduced from the second gas introduction pipe 8 at a flow rate of 20 to 50 CCM is decomposed by the energy of the plasma, the excitation solenoid 4 and the sub solenoid are decomposed. As a result, the cusp magnetic field formed near the substrate holder 9 reaches the surface of the substrate 10 having a diameter of 8 inches above the substrate holder 9. The substrate holder 9 is supplied with high frequency power of 13.56 MHz for 100 to 100.
The pressure in the sample chamber 7 is adjusted to a pressure in the range of 5 to 100 mTorr by applying a power in the range of 0 W and exhausting the gas through the exhaust pipe 12. Note that N ₂ gas is used instead of the above O ₂ gas.
₂ O or a mixed gas of N ₂ O and O ₂ can also be used.

Using the above apparatus, a silicon oxide film was formed while changing the individual film forming conditions within the ranges shown in the following table.

[0017]

[Table 1] FIG. 4 shows a film formation rate of 5 formed under the above range of film formation conditions.
4 shows the dependence of the film formation rate on the number of processed silicon oxide films at a rate of 00 ° / min or more during continuous film formation. Even in the continuous deposition of 25 sheets, the deposition rate is within the range of ± 2%.
The second gas introduction pipe 8 for introducing the reactive gas is provided with the preheating mechanism 2
1, the gas introduction ring 22 and the deposition preventing plate 24
Was kept at 140 ° C. by the constant temperature control unit 23. The reproducibility of the film forming speed is improved as compared with the film forming result without temperature control (FIG. 5). By keeping the interaction between the film forming active species and the inner wall of the apparatus constant, the amount of the film forming active species reaching the substrate becomes constant, and the film forming rate becomes constant.

Next, a second embodiment of the present invention will be described with reference to FIG. The apparatus configuration in FIG. 6 allows a reactive gas to be introduced into the plasma generation chamber in order to enable the film to be formed when the substrate is brought close to the plasma generation chamber for high-speed film formation or inserted into the plasma generation chamber. It is what it was.
Most of the device configuration is the same as in the first embodiment,
Since some are different, the whole will be described again. A waveguide 1 connected to a microwave power supply (not shown) is attached to a plasma generation chamber 3 through a waveguide window 2, and an excitation solenoid 4 is provided around the plasma generation chamber 3. A first gas introduction pipe 5 for introducing a plasma source gas into the plasma generation chamber 3 is provided. Further, a second gas introduction pipe 8 for introducing a reactive gas is also connected to the plasma generation chamber 3, and the gas introduction ring 22 forms a cylindrical cavity resonator in which the inner wall of the plasma generation chamber 3 has a microwave. Therefore, it is disposed outside the plasma generation chamber 3, and the inner wall surface and the bottom surface of the annular gas introduction ring 22 having a rectangular cross section also serve as the peripheral wall and the flange of the plasma generation chamber 3. A sample chamber 7 is provided connected to the plasma generation chamber 3, and a second gas introduction pipe 8 is provided inside the sample chamber 7.
The substrate holder 9 is installed at a location downstream of the inlet of the substrate. On the back side of the substrate holder 9, there is a sub-solenoid 13 arranged coaxially with the excitation solenoid 4. The substrate holder 9 is connected to a high-frequency power supply 11, and below the substrate holder 9, an exhaust pipe 12 connected to a vacuum pump (not shown), a valve 12a for adjusting gas pressure in the sample chamber 7, and a variable And an orifice 17. Reference numeral 15 in the drawing denotes a vacuum gauge, and 16 denotes a feedback circuit, which changes the opening of the variable orifice 17 so that the gas pressure in the sample chamber 7 maintains a predetermined value. The pressure is adjusted by introducing an oxygen source gas, a nitrogen gas, or an inert gas introduced into the plasma chamber from the middle of the exhaust pipe of the sample chamber 7 into the exhaust pipe, or by adjusting the conductance of a vacuum pump. Can also.

The second gas introduction pipe 8 for introducing the reactive gas has a preheating mechanism 21 having the same configuration as that of the first embodiment.
With. As the constant temperature control unit 23 for keeping the gas introduction ring 22 at a constant temperature, a temperature control type aluminum casting heater or a unit for circulating a fluid whose temperature is controlled by the same mechanism as in the first embodiment is used. Have been. The deposition prevention plate 24 is also maintained at a constant temperature by the constant temperature control unit. However, in this device configuration, the gas introduction ring 22 is not close to the deposition prevention plate 24, so that the temperature is raised to an arbitrary temperature different from the gas introduction ring 22. , Can be held.

An embodiment of a method for manufacturing a silicon oxide film when the apparatus is operated as a divergent magnetic field type ECR plasma CVD apparatus having the above-described structure and not using the sub solenoid 13 will be described. The microwave introduced through the waveguide 1 and the waveguide window 2 has a frequency of 2.45 GHz and a power supply of 0.5.
A magnetic flux density of 875 gauss is formed in the plasma generation chamber 3 by the excitation solenoid 4. Under these conditions, 200-400
By introducing O ₂ gas CCM into the plasma generation chamber 3, thereby generating plasma. This plasma is an exciting solenoid 4
Is drawn into the sample chamber 7 by the divergent magnetic field formed by
The silane gas introduced at a flow rate of 100 to 200 CCM from the gas introduction pipe 8 reaches the surface of the substrate 10 having a diameter of 8 inches above the substrate holder 9 while being decomposed by the energy of the plasma. A high frequency power of 13.56 MHz is applied to the substrate holder 9 in a power range of 100 to 2000 W, and exhausted from the exhaust pipe 12 so that the inside of the sample chamber
Adjust to a pressure in the range of 100 mTorr. Note that N ₂ O or a mixed gas of N ₂ O and O ₂ may be used in place of the above O ₂ gas.

Using the above apparatus, a silicon oxide film was formed by changing the individual film forming conditions within the ranges shown in the following table.

[0022]

[Table 2] FIG. 7 shows a film formation rate of 5 formed under the above range of film formation conditions.
3 shows the dependence of the film formation rate on the number of processed silicon oxide films at a continuous film formation of 2,000 ° C./min or more. Even in the continuous deposition of 25 sheets, the deposition rate is within the range of ± 2%. The second gas introduction pipe 8 for introducing the reactive gas is provided by the preheating mechanism 21, the gas introduction ring 22 and the deposition preventing plate 2.
4 was kept at 140 ° C. by the constant temperature control unit 23. The reproducibility of the film forming speed is improved as compared with the film forming result without temperature control (FIG. 8). By keeping the interaction between the film forming active species and the inner wall of the apparatus constant, the amount of the film forming active species reaching the substrate becomes constant, and the film forming rate becomes constant.

In addition, the reproducibility of the etching rate and internal stress of the film with an etching solution (buffer hydrofluoric acid) is also high.
It was found to improve. By keeping the interaction between the film forming active species and the inner wall of the apparatus constant, the amount of the film forming active species reaching the substrate becomes constant, and the film characteristics become constant. When dry cleaning was performed after the formation of the silicon oxide film in the apparatus configuration according to the first embodiment, the cleaning speed was 1500 ° // in terms of film thickness on the substrate in the conventional method.
min, the second gas introduction pipe 8 is connected to the preheating mechanism 2
1. When the gas introduction ring and the deposition-preventing plate were kept at 140 ° C. by the constant temperature control unit 23, 3000 ° / m.
improved to in. FIG. 9 shows the temperature dependence of the dry cleaning speed. This is due to the temperature dependence of the reaction rate.

[0024]

As described above, according to the present invention, as a plasma processing apparatus to which the present invention is directed, a plasma generation chamber into which a microwave and a plasma source gas are introduced,
An excitation solenoid that coaxially surrounds the plasma generation chamber and forms an electron cyclotron resonance magnetic field in the plasma generation chamber, and a substrate holder that communicates the plasma generation chamber with the internal space and holds the substrate with its film-forming surface facing the plasma generation chamber. , A cylindrical anti-blocking plate that covers the inner wall surface of the sample chamber and prevents the thin film substance from adhering to the inner wall surface during the film formation on the substrate, and a ring-shaped coaxial with the anti-plate A gas introduction ring for ejecting the reactive gas introduced into the annular internal space to the inside of the deposition-preventing plate, and a gas introduction pipe extending from an external reactive gas supply source to the gas introduction ring. In an ECR plasma CVD apparatus having a normal configuration, a plasma generation chamber into which microwaves, a plasma source gas, and a reactive gas are introduced, and a plasma generation chamber are coaxially surrounded by a plasma generation chamber. An excitation solenoid that forms an electron cyclotron resonance magnetic field with a microwave, a sample chamber that includes a substrate holder that communicates the plasma generation chamber with the internal space and holds the substrate with its film-forming surface facing the plasma generation chamber; A cylindrical deposition-preventing plate that covers the inner wall surface of the sample chamber and prevents the thin film substance from adhering to the inner wall surface during film formation on the substrate; ECR for high-speed film formation, comprising a gas introduction ring for ejecting the reactive gas introduced into the space into the plasma generation chamber, and a gas introduction pipe from the external reactive gas supply source to the gas introduction ring In plasma CVD equipment,
By raising and maintaining the temperature of the deposition plate, the gas introduction ring, and the gas introduction ring and the vicinity of the gas introduction ring at a constant temperature, the interaction between the film forming active species and the inner wall of the apparatus during film formation is kept constant, and the film is deposited on the substrate. Of the film forming active species is constant, and even if a plurality of substrates are continuously processed, constant film characteristics are obtained, and the reliability of the film quality is improved. In addition, since the film characteristics become constant,
The etching rate by the etchant is also constant, and the etching operation is stabilized. Further, at the time of dry cleaning inside the apparatus, the cleaning rate is greatly improved due to the temperature dependence of the cleaning rate, and an effect that the operation rate of the apparatus is improved can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first embodiment of the configuration of a plasma processing apparatus according to the present invention.

FIG. 2 is a functional block diagram showing a first embodiment of the configuration of the constant temperature control means in the present invention.

FIG. 3 is a functional block diagram showing a second embodiment of the configuration of the constant temperature control means in the present invention.

FIG. 4 is a plot diagram showing a change in a film formation rate depending on the number of films when a cusp magnetic field is formed and a continuous film formation process is performed on a plurality of substrates using the plasma processing apparatus shown in FIG.

FIG. 5 is a view showing a plasma processing apparatus shown in FIG. 1, in which a cusp magnetic field is formed, a deposition prevention plate, a constant temperature control unit of a gas introduction ring, and a preheating mechanism of a gas introduction pipe are removed, and a continuous film formation process is performed on a plurality of substrates. Plot showing the state of change in the film forming rate depending on the number of films formed when performing

FIG. 6 is a longitudinal sectional view showing a second embodiment of the configuration of the plasma processing apparatus according to the present invention.

FIG. 7 is a plot diagram showing a change state of a film forming rate depending on the number of film formed when a divergent magnetic field is formed and a continuous film forming process is performed on a plurality of substrates using the plasma processing apparatus shown in FIG.

8 is a diagram illustrating a plasma processing apparatus shown in FIG. 6, in which a divergent magnetic field is formed, a deposition control plate, a constant temperature control unit of a gas introduction ring, and a preheating mechanism of a gas introduction pipe are removed, and a continuous film formation process is performed on a plurality of substrates. Plot showing the state of change in the film forming rate depending on the number of films formed when performing

9 is a diagram showing the temperature dependence of a cleaning speed in dry cleaning in the plasma processing apparatus shown in FIG. 1 in comparison with a case where a constant temperature control unit and a preheating mechanism in the apparatus are removed.

FIG. 10 is a longitudinal sectional view showing a conventional configuration example of a plasma processing apparatus targeted by the present invention.

FIG. 11 is a diagram showing a state of a temporal change of a deposition prevention plate temperature and a gas introduction ring temperature when plasma processing is continuously performed in a conventional plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Waveguide 3 Plasma generation chamber 4 Excitation solenoid 5 First gas introduction pipe 7 Sample chamber 8 Second gas introduction pipe (gas introduction pipe) 9 Substrate holder 10 Substrate 11 High frequency power supply 13 Sub solenoid 21 Preheating mechanism (constant temperature control means 22) Gas introduction ring 23 Constant temperature control unit (constant temperature control means) 24 Deposition plate

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/205 H01L 21/3065 H01L 21/31

Claims (3)

(57) [Claims] A plasma generation chamber into which a microwave and a plasma raw material gas are introduced; an excitation solenoid that coaxially surrounds the plasma generation chamber and forms an electron cyclotron resonance magnetic field in the plasma generation chamber; A sample chamber that contains a substrate holder that communicates and holds the substrate with its film-forming surface facing the plasma generation chamber, and a thin-film substance adheres to the inner wall surface during film formation on the substrate by covering the inner wall surface of the sample chamber. And a gas introduction ring which is formed in an annular shape and is arranged coaxially with the anti-sticking plate and ejects a reactive gas introduced into the annular internal space to the inside of the anti-sticking plate. ,
In a plasma processing apparatus comprising a gas introduction pipe extending from an external reactive gas supply source to a gas introduction ring, a heating plate is provided on each of a deposition prevention plate, a gas introduction ring, and a gas introduction ring near the gas introduction ring. A plasma processing apparatus having a constant temperature control means comprising a temperature control means and maintaining the temperature at a constant temperature in the range of 50 to 150 ° C. during film formation on a substrate or dry cleaning inside the apparatus. 2. A plasma generation chamber into which microwaves, a plasma source gas, and a reactive gas are introduced, and an excitation solenoid surrounding the plasma generation chamber coaxially and forming an electron cyclotron resonance magnetic field with the microwave in the plasma generation chamber. A sample chamber containing a substrate holder for communicating the plasma generation chamber with the internal space and holding the substrate with its film-forming surface facing the plasma generation chamber; and covering the inner wall surface of the sample chamber and forming a film on the substrate. A cylindrical deposition-preventing plate for preventing thin film substances from adhering to the inner wall surface; and a reactive gas introduced into the annular inner space formed in an annular shape and arranged coaxially with the plasma generating chamber, into the plasma generating chamber. In a plasma processing apparatus including a gas introduction ring to be ejected and a gas introduction pipe from an external reactive gas supply source to a gas introduction ring, a deposition plate, a gas introduction ring, A constant temperature control means consisting of a heating means and a temperature control means is provided near the gas introduction ring of the inlet pipe, and is maintained at a constant temperature in the range of 50 to 150 ° C. during film formation on the substrate or dry cleaning inside the apparatus. A plasma processing apparatus. 3. The plasma processing apparatus according to claim 1, wherein the vicinity of the gas introduction ring of the deposition-preventing plate, the gas introduction ring, and the gas introduction pipe is 50 to 150, respectively.
The heating means for raising the temperature to a constant temperature in the range of ° C. may be an aluminum casting heater formed by casting a sheathed heater in an aluminum ingot, or a fluid heater for flowing a heating fluid through a circulation pipe. Plasma processing apparatus.