JP2514328B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2514328B2 JP2514328B2 JP61102790A JP10279086A JP2514328B2 JP 2514328 B2 JP2514328 B2 JP 2514328B2 JP 61102790 A JP61102790 A JP 61102790A JP 10279086 A JP10279086 A JP 10279086A JP 2514328 B2 JP2514328 B2 JP 2514328B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- semiconductor manufacturing
- manufacturing apparatus
- ion source
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は半導体製造装置に関し、特に、半導体素子
製造工程におけるプラズマを使用して微細加工または薄
膜形成などの表面処理を行なうような半導体製造装置に
関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus that performs surface processing such as fine processing or thin film formation using plasma in a semiconductor element manufacturing process. Regarding
［従来の技術］ 半導体集積回路は、益々高集積化の要求が厳しくなっ
てきており、パターンの微細化およびゲート絶縁膜など
の膜形成時の薄膜化が進んでいる。現在では、これらの
要求に対応するために、微細加工では反応性イオンをビ
ーム状にして、試料に照射させることによりエッチング
する方法、いわゆる反応性イオンビームエッチング（以
下、RIBEと称する）が検討されている。[Prior Art] The demand for higher integration of semiconductor integrated circuits is becoming more and more strict, and pattern miniaturization and thinning at the time of forming a film such as a gate insulating film are progressing. At present, in order to meet these demands, a method of forming reactive ions into a beam and etching the sample by irradiating it on a sample, so-called reactive ion beam etching (hereinafter referred to as RIBE), is being studied in microfabrication. ing.
第２図および第３図は従来のRIBE法で用いられる半導
体製造装置の構成例を示す図である。2 and 3 are diagrams showing a configuration example of a semiconductor manufacturing apparatus used in the conventional RIBE method.
第２図において、マイクロ波が供給されるイオン源４
の周囲には、第１および第２の磁気コイル1,2が巻回さ
れていて、試料台６には試料５が配置されている。そし
て、第１および第２の磁気コイル1,2によって発散磁場
が構成され、イオン源４から生じた高速電子が試料５に
照射されて、所定の処理が施される。In FIG. 2, an ion source 4 supplied with microwaves.
The first and second magnetic coils 1 and 2 are wound around, and the sample 5 is placed on the sample table 6. Then, a divergent magnetic field is formed by the first and second magnetic coils 1 and 2, and high-speed electrons generated from the ion source 4 are irradiated on the sample 5 to perform a predetermined process.
なお、試料台６の後方に第３の磁気コイル３を巻回す
ることにより、ミラー磁場を形成することもできる。ま
た、電子サイクロトロン共鳴（以下、ECRと称する）現
象を利用したイオン源を用いたRIBE装置の場合は、イオ
ン加速用グリッドを設けなくとも比較的大電流が得ら
れ、微細パターンの加工だけではなく、薄膜形成などに
おいてもECRイオン源を利用した装置による方法が注目
されている。A mirror magnetic field can also be formed by winding the third magnetic coil 3 behind the sample table 6. Further, in the case of the RIBE device using an ion source that utilizes the electron cyclotron resonance (hereinafter referred to as ECR) phenomenon, a relatively large current can be obtained without providing an ion acceleration grid, and not only the processing of fine patterns Also, in the case of thin film formation, a method using an apparatus using an ECR ion source is drawing attention.
［発明が解決しようとする問題点］ しかし、従来のプラズマ半導体製造装置では、第２図
および第３図に示したように、磁場構成を発散磁場ある
いはミラー磁場にしており、このような状態では、多量
の高速電子が試料５に衝突し、試料５自体の温度上昇お
よび試料５の損傷が発生するなどの問題点があった。[Problems to be Solved by the Invention] However, in the conventional plasma semiconductor manufacturing apparatus, as shown in FIGS. 2 and 3, the magnetic field structure is a divergent magnetic field or a mirror magnetic field. However, there is a problem that a large amount of high-speed electrons collide with the sample 5 and the temperature of the sample 5 itself rises and the sample 5 is damaged.
それゆえに、この発明の主たる目的は、試料への電子
またはイオンの衝撃が少なくかつ低温でプラズマ処理が
可能な半導体製造装置を提供することである。Therefore, a main object of the present invention is to provide a semiconductor manufacturing apparatus in which the impact of electrons or ions on a sample is small and plasma processing can be performed at a low temperature.
［問題点を解決するための手段］ この発明はイオン源の周囲に第１の磁気コイルを配置
するとともに、負電位にされている試料台によって試料
を保持し、その試料にプラズマ流を照射して試料表面の
処理を行なう半導体製造装置において、試料の近傍の壁
面に設けられ、プラズマ流を試料表面に導くために正電
位の印加された電極と、試料台の後ろ側に配置され、第
１の磁気コイルとは逆向きの電流が流されて試料台の周
囲にカスプ磁場を形成するための第２の磁気コイルとを
備えて構成される。[Means for Solving Problems] In the present invention, a first magnetic coil is arranged around an ion source, and a sample is held by a sample table set to a negative potential, and the sample is irradiated with a plasma flow. In a semiconductor manufacturing apparatus for treating a sample surface by means of an electrode, which is provided on a wall surface in the vicinity of the sample and to which a positive potential is applied to guide a plasma flow to the sample surface, is arranged behind a sample table. And a second magnetic coil for forming a cusp magnetic field around the sample table by supplying a current in the direction opposite to that of the magnetic coil.
［作用］ この発明の半導体製造装置は、試料近傍の壁面に設け
た電極に正電位を印加してプラズマ流を試料表面に導
き、試料台の後ろ側に配置された第２の磁気コイルに逆
向きの電流を流して試料台の周囲にカスプ磁場を形成し
たことにより、電場および磁場構成を最適化でき、試料
への高速電子またはイオンの入射を減少させることがで
き、試料温度の上昇および試料の損傷を防いだ状態で安
定したプラズマ処理が可能になる。[Operation] The semiconductor manufacturing apparatus of the present invention applies a positive potential to the electrode provided on the wall surface in the vicinity of the sample to guide the plasma flow to the sample surface, and reverses the second magnetic coil arranged behind the sample table. By forming a cusp magnetic field around the sample stage by applying an electric current in the direction, it is possible to optimize the electric field and magnetic field configuration, reduce the incidence of fast electrons or ions on the sample, increase the sample temperature and increase the sample temperature. It is possible to perform stable plasma processing while preventing damage to the plasma.
［発明の実施例］ 第１図はこの発明の一実施例の半導体製造装置の概要
を示す図である。この第１図に示した半導体製造装置
は、以下の点を除いて前述の第２図および第３図と同じ
である。すなわち、試料５の近傍の壁面には、10ないし
40V程度の正電位に印加された電極７が配置され、試料
台６には、直流バイアスまたは高周波バイアスの電源８
から−１ないし−50V程度の負電位が印加されている。
なお、試料台６の後方に設けられた第３の磁気コイル３
は前述の第３図に示した磁気コイル３とは電流の流れが
逆方向となるようにされている。[Embodiment of the Invention] FIG. 1 is a diagram showing an outline of a semiconductor manufacturing apparatus according to an embodiment of the present invention. The semiconductor manufacturing apparatus shown in FIG. 1 is the same as that shown in FIGS. 2 and 3 except for the following points. That is, on the wall surface near the sample 5, 10 or
An electrode 7 applied to a positive potential of about 40 V is arranged, and a direct-current bias or high-frequency bias power source 8 is mounted on the sample table 6.
A negative potential of about -1 to -50V is applied.
The third magnetic coil 3 provided behind the sample table 6
The current flow is in the opposite direction to the magnetic coil 3 shown in FIG.
上述のごとく構成された半導体製造装置において、イ
オン源４は放電により電子およびイオンを発生する。発
生された電子は磁力線に沿って試料５の方向へ急速に加
速される。しかし、電子は試料５の近くまで到達する
と、形成されている電場および磁場によって大部分が試
料５の外側に逸れてしまい、試料５に入射する電子が少
量となる。それによって、電子衝撃の少ないかつ低温で
のプラズマ処理が可能となる。In the semiconductor manufacturing apparatus configured as described above, the ion source 4 generates electrons and ions by discharging. The generated electrons are rapidly accelerated in the direction of the sample 5 along the lines of magnetic force. However, when the electrons reach the vicinity of the sample 5, most of the electrons are diverted to the outside of the sample 5 due to the formed electric field and magnetic field, and the number of electrons incident on the sample 5 is small. As a result, it becomes possible to perform plasma processing at a low temperature with a low electron impact.
ここで、上述の半導体製造装置を使用して、多結晶シ
リコンの微細パターンをエッチング加工する場合の作用
効果について説明する。Here, the function and effect of etching the fine pattern of polycrystalline silicon by using the above-described semiconductor manufacturing apparatus will be described.
まず、反応性ガスとして６フッ化硫黄（SF6）をイオ
ン源４に導入し、2.45GHzのマイクロ波をイオン源４に
供給するとともに、磁気コイル1,2によって875Gの磁場
を形成することにより、ECR現象を生じさせ、高密度プ
ラズマを発生して試料台６上の試料５をエッチング加工
した。この場合、第１の磁気コイル１に硫れる電流を18
0A,第２の磁気コイル２に硫れる電流を180Aおよび第３
の磁気コイル３に硫れる電流を−180Aとすることによ
り、試料表面近傍の磁場をほぼ０とするカスプ磁場を形
成することができた。そして、マイクロ波電力を650W,
ガス圧力を6.4×10-2Pa,試料台６の電位を接地状態に
し、試料台６に硫れるサセプタ電流密度を1.25mA/cm2と
し、試料５の温度を60℃以下という低温状態に置いて、
多結晶シリコンを毎分200nm以上の高速度にてエッチン
グ加工することが可能となった。First, by introducing sulfur hexafluoride (SF 6 ) as a reactive gas into the ion source 4, supplying a microwave of 2.45 GHz to the ion source 4, and forming a magnetic field of 875 G by the magnetic coils 1 and 2. , ECR phenomenon was generated, and high-density plasma was generated to etch the sample 5 on the sample table 6. In this case, the current flowing through the first magnetic coil 1 is 18
0A, the current that vulcanizes to the second magnetic coil 2 is 180A and the third
A cusp magnetic field that makes the magnetic field in the vicinity of the sample surface almost zero could be formed by setting the current flowing to the magnetic coil 3 of −180 A. And microwave power 650W,
The gas pressure is 6.4 × 10 -2 Pa, the potential of the sample table 6 is grounded, the susceptor current density that vulcanizes to the sample table 6 is 1.25 mA / cm 2, and the temperature of the sample 5 is 60 ° C. or lower. hand,
It has become possible to etch polycrystalline silicon at a high speed of 200 nm or more per minute.
他の条件は同じで、第３の磁気コイル３に流れる電流
をOA（発散磁場）にした場合は、サセプタ電流密度は約
0.4mA/cm2であり、試料温度は約65℃であった。また、
第３の磁気コイル３に流れる電流を90A（ミラー磁場）
にした場合は、サセプタ電流密度は−0.2mA/cm2とな
り、試料温度は73℃まで上昇し、高速電子が多量に入射
できるようになった。Other conditions are the same, and when the current flowing through the third magnetic coil 3 is OA (divergent magnetic field), the susceptor current density is about
The sample temperature was 0.4 mA / cm 2 , and the sample temperature was about 65 ° C. Also,
The current flowing through the third magnetic coil 3 is 90 A (mirror magnetic field)
In this case, the susceptor current density was −0.2 mA / cm 2 , the sample temperature rose to 73 ° C., and a large amount of high-speed electrons could be injected.
上述のごとく、試料近傍での電場形成および磁場形成
をカスプ磁場とすることによって、電子またはイオン衝
撃が少なく、低温状態においてデバイス損傷の少ない安
定したプラズマ処理を行なうことが可能となった。As described above, by using the cusp magnetic field to form the electric field and the magnetic field near the sample, it becomes possible to perform stable plasma processing with less electron or ion bombardment and less device damage at low temperatures.
なお、上述の説明では、ECR型イオン源を使用し、エ
ッチング加工する例について説明したが、これに限るこ
となく、プラズマ流を用いて薄膜形成または試料表面の
酸化，窒化などの表面処理などのすべてのプラズマ処理
装置に適用可能である。In the above description, an example of etching using an ECR type ion source was described, but the present invention is not limited to this, and thin film formation using a plasma flow or surface treatment such as oxidation and nitridation of the sample surface is performed. It is applicable to all plasma processing apparatuses.
［発明の効果］ 以上のように、この発明によれば、試料の近傍の壁面
に設けた電極からプラズマ流を試料表面に導くととも
に、試料台の後ろ側に配置した第２の磁気コイルに逆向
きの電流を流して試料台の周囲にカスプ磁場を形成する
ようにしたので、安定したプラズマ処理が可能となり、
イオンが周辺へ発散するのを防ぐこともできるため、均
一性のよい高速処理が可能となる。[Advantages of the Invention] As described above, according to the present invention, the plasma flow is guided to the sample surface from the electrode provided on the wall surface in the vicinity of the sample, and the plasma flow is reversed to the second magnetic coil arranged behind the sample table. Since a cusp magnetic field is formed around the sample table by passing an electric current in the direction, stable plasma processing becomes possible,
Since it is possible to prevent the ions from diverging to the periphery, high-speed processing with good uniformity becomes possible.
第１図はこの発明の一実施例の構成を示す図である。第
２図および第３図は従来の半導体製造装置の構成を示す
図である。 図において、１は第１の磁気コイル、２は第２の磁気コ
イル、３は第３の磁気コイル、４はイオン源、５は試
料、６は試料台、７は電極、８は電源を示す。FIG. 1 is a diagram showing the configuration of an embodiment of the present invention. 2 and 3 are diagrams showing the configuration of a conventional semiconductor manufacturing apparatus. In the figure, 1 is a first magnetic coil, 2 is a second magnetic coil, 3 is a third magnetic coil, 4 is an ion source, 5 is a sample, 6 is a sample stage, 7 is an electrode, and 8 is a power source. .
Claims (6)
するとともに、負電位にされている試料台によって試料
を保持し、該試料にプラズマ流を照射して前記試料表面
の処理を行なう半導体製造装置において、 前記試料近傍の壁面に設けられ、前記プラズマ流を前記
試料表面に導くために、正電位の印加された電極、およ
び 前記試料台の後ろ側に配置され、前記第１の磁気コイル
とは逆向きの電流が流され、前記試料台の周囲にカスプ
磁場を形成するための第２の磁気コイルを備え、 前記試料を低温状態で処理することを特徴とする、半導
体製造装置。1. A first magnetic coil is arranged around an ion source, and a sample is held by a sample table set to a negative potential, and the sample is irradiated with a plasma flow to treat the sample surface. In a semiconductor manufacturing apparatus, an electrode is provided on a wall surface in the vicinity of the sample, to which a positive potential is applied to guide the plasma flow to the sample surface, and the sample magnet is disposed behind the sample table and includes the first magnetic field. A semiconductor manufacturing apparatus, comprising: a second magnetic coil for applying a current in a direction opposite to that of the coil and forming a cusp magnetic field around the sample stage, and processing the sample in a low temperature state.
状態で処理される、特許請求の範囲第１項に記載の半導
体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the sample is processed in a state where there is little electron or ion bombardment.
求の範囲第１項または第２項に記載の半導体製造装置。3. The semiconductor manufacturing apparatus according to claim 1, wherein the sample is etched.
の範囲第１項または第２項に記載の半導体製造装置。4. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the sample is subjected to thin film formation processing.
を行なうものである、特許請求の範囲第１項または第２
項に記載の半導体製造装置。5. The sample according to claim 1 or 2, wherein the sample is subjected to surface alteration treatment such as oxidation and nitriding.
The semiconductor manufacturing apparatus according to item.
サイクロトロン共鳴現象を利用したイオン源である、特
許請求の範囲第１項ないし第５項のいずれかに記載の半
導体製造装置。6. The semiconductor manufacturing apparatus according to claim 1, wherein the ion source for generating the plasma flow is an ion source utilizing an electron cyclotron resonance phenomenon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61102790A JP2514328B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61102790A JP2514328B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62271431A JPS62271431A (en) | 1987-11-25 |
| JP2514328B2 true JP2514328B2 (en) | 1996-07-10 |
Family
ID=14336911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61102790A Expired - Lifetime JP2514328B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2514328B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5813627A (en) * | 1981-06-16 | 1983-01-26 | モンサント・カンパニ− | Acid halide functional substance and acyl lactam functional substance |
| JPS59225525A (en) * | 1983-06-06 | 1984-12-18 | Agency Of Ind Science & Technol | Reactive ion beam etching apparatus |
| JPS6113634A (en) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | Plasma processor |
| JPS6115385A (en) * | 1984-07-02 | 1986-01-23 | Nec Corp | Semiconductor laser |
| JPH0770512B2 (en) * | 1985-02-04 | 1995-07-31 | 日本電信電話株式会社 | Low energy ionized particle irradiation device |
-
1986
- 1986-04-30 JP JP61102790A patent/JP2514328B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62271431A (en) | 1987-11-25 |
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