JP2509812Y2 - Discharge type surge absorber with safety mechanism - Google Patents
Discharge type surge absorber with safety mechanismInfo
- Publication number
- JP2509812Y2 JP2509812Y2 JP656191U JP656191U JP2509812Y2 JP 2509812 Y2 JP2509812 Y2 JP 2509812Y2 JP 656191 U JP656191 U JP 656191U JP 656191 U JP656191 U JP 656191U JP 2509812 Y2 JP2509812 Y2 JP 2509812Y2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- conductive thin
- insulating substrate
- thin film
- type surge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本考案は、電話回線等に誘起され
る誘導雷等のサージを吸収して機器が損傷することを防
止する放電型サージ吸収素子に係り、特に外径形状の小
型化を図ることでスペースファクターが優れるととも
に、放電型サージ吸収素子を流れる連続した過電流を遮
断することのできる保安機構付放電型サージ吸収素子に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a discharge type surge absorbing element which absorbs a surge such as inductive lightning induced on a telephone line or the like to prevent damage to the equipment, and particularly to downsizing of outer diameter shape. The present invention relates to a discharge type surge absorbing element with a safety mechanism, which has an excellent space factor and can block continuous overcurrent flowing through the discharge type surge absorbing element.
【0002】[0002]
【従来の技術】従来、電子回路に加わる誘導雷等のサー
ジから電子回路を保護するためのサージ吸収素子とし
て、電圧非直線特性を有する高抵抗体素子より成るバリ
スタや、放電間隙を気密容器に収容したアレスタ等が広
く使用されている。しかし、上記バリスタは、サージ吸
収の応答性に優れるものの、単位断面積当たりの電流耐
量が比較的小さく、したがって大きなサージ電流を効率
よく吸収することが困難であった。また、上記アレスタ
は、その放電間隙にアーク放電を生成することにより電
流耐量を大きくすることができるのであるが、サージの
印加からアーク放電までに要する時間が上記バリスタと
比較して遅く、その応答性に問題を有していた。2. Description of the Related Art Conventionally, as a surge absorbing element for protecting an electronic circuit from a surge such as an induced lightning which is applied to the electronic circuit, a varistor made of a high resistance element having a voltage non-linear characteristic and a discharge gap are sealed in an airtight container. Stored arresters are widely used. However, although the varistor has excellent surge absorption response, it has a relatively small current withstanding capacity per unit cross-sectional area, and thus it is difficult to efficiently absorb a large surge current. Further, the arrester can increase the current withstanding capacity by generating an arc discharge in its discharge gap, but the time required from the application of a surge to the arc discharge is slower than that of the varistor, and its response Had a sex problem.
【0003】そこで、上記アレスタにおけるサージ吸収
の応答性を改善すべく、図3及び図4に示す如く、略円
柱状の絶縁体22の表面に導電性薄膜23を被着させた
上で、この導電性薄膜23に幅が0.1mm程度の微小
放電間隙24を周回状に形成して導電性薄膜23を分割
するとともに、絶縁体22の両端に主放電間隙25を隔
てて放電電極26,26を嵌着して上記導電性薄膜2
3,23と放電電極24,24とを接続し、これを放電
ガスとともに気密容器27内に封入して外部端子28,
28を導出したサージ吸収素子21が提案されている。
この微小放電間隙24を有するサージ吸収素子21にサ
ージが印加された場合、まず微小放電間隙24を介した
導電性薄膜23,23間に電位差が生じ、これにより微
小放電間隙24に電子が放出されて沿面放電が発生す
る。次いで、この沿面放電に伴って生ずる電子のプライ
ミング効果によってグロー放電へと移行する。そして、
このグロー放電がサージ電流の増加によって主放電間隙
25へと転移し、アーク放電に移行してサージを吸収す
るものである。このように、微小放電間隙24を有する
サージ吸収素子21は、元来応答速度の速い沿面放電を
利用するものであるため、上記バリスタと比較して略同
等の優れた応答性を有するとともに、電流耐量も大きく
優れたものである。Therefore, in order to improve the response of surge absorption in the arrester, as shown in FIGS. 3 and 4, a conductive thin film 23 is deposited on the surface of a substantially cylindrical insulator 22, and then this is used. A minute discharge gap 24 having a width of about 0.1 mm is formed in a circular shape in the conductive thin film 23 to divide the conductive thin film 23, and the discharge electrodes 26, 26 are separated at both ends of the insulator 22 with a main discharge gap 25. The conductive thin film 2 by fitting
3, 23 and the discharge electrodes 24, 24 are connected to each other, and the discharge electrodes 24 and 24 are sealed together with a discharge gas in an airtight container 27 to form external terminals 28,
A surge absorbing element 21 derived from 28 has been proposed.
When a surge is applied to the surge absorbing element 21 having the minute discharge gap 24, first, a potential difference is generated between the conductive thin films 23, 23 via the minute discharge gap 24, whereby electrons are emitted to the minute discharge gap 24. Creeping discharge occurs. Next, a transition is made to a glow discharge due to the priming effect of electrons generated by the creeping discharge. And
This glow discharge is transferred to the main discharge gap 25 due to an increase in surge current, and is transferred to arc discharge to absorb the surge. As described above, since the surge absorbing element 21 having the minute discharge gap 24 utilizes creeping discharge having a high response speed originally, it has substantially the same excellent responsiveness as the varistor, and at the same time, has a high current It has a large tolerance and is excellent.
【0004】この従来のサージ吸収素子21にあって
は、図3に示す如く、気密容器27が略円筒形状を有
し、所謂小型電子部品と比較して決して小型とはいえな
いことから、各種電子・電気機器内部に実装する際に一
定程度の専有域を必要としていた。しかし、近年の電子
・電気機器にあっては、著しく小型・軽量化が図られ、
これにより電子部品もIC等により小型集積化が推し進
められ、したがって従来のサージ吸収素子にあっても更
に小型化が要求されている。In this conventional surge absorbing element 21, as shown in FIG. 3, the airtight container 27 has a substantially cylindrical shape and is not so small as compared with so-called small electronic parts. It required a certain degree of exclusive area when it was mounted inside electronic and electrical equipment. However, in recent years electronic and electric devices have been significantly reduced in size and weight,
As a result, miniaturization of electronic components is promoted by ICs and the like, and therefore, there is a demand for further miniaturization even in the conventional surge absorbing element.
【0005】また、上述した従来のサージ吸収素子21
にあっては、電力線との接触事故やこのような事故を想
定したULやCSA等の安全規格による過電圧試験によ
って、サージ吸収素子の定格を上回る連続した過電圧が
印加された場合には、主放電間隙25に生成するアーク
放電による過大電流の通電が持続状態となる。更に、こ
の過大電流の持続した通電に伴う発熱によって気密容器
が溶融することで、サージ吸収素子を実装した回路基板
が焼損するに至り、これにより上記過電圧試験における
合格基準を充足するに至らないが多々あった。また、上
述した現象が実際の使用状態において発生した場合に
は、火災に至る虞れもある。Further, the conventional surge absorbing element 21 described above is used.
Therefore, if a continuous overvoltage exceeding the rating of the surge absorbing element is applied by an overvoltage test based on safety standards such as UL and CSA assuming such accidents with the power line, the main discharge The energization of the excessive current due to the arc discharge generated in the gap 25 is maintained. Furthermore, the heat generated by the continuous energization of this excessive current causes the airtight container to melt, resulting in burnout of the circuit board on which the surge absorbing element is mounted, which does not satisfy the acceptance criteria in the overvoltage test. There were many. Moreover, when the above-mentioned phenomenon occurs in an actual use state, there is a possibility of causing a fire.
【0006】[0006]
【考案が解決しようとする課題】そこで、本考案の保安
機構付放電型サージ吸収素子にあっては、外径形状の小
型化を図りスペースファクターを向上させるとともに、
回線事故や過電圧試験において放電が持続状態となった
場合であっても、過電流の通電を遮断することで焼損事
故を未然に防止し、安全規格に適合する安全性の優れた
保安機構付放電型サージ吸収素子の実現を目的とする。Therefore, in the discharge type surge absorbing element with a safety mechanism of the present invention, the outer diameter shape is made smaller and the space factor is improved, and
Even if the discharge is sustained in a line accident or an overvoltage test, the burnout accident can be prevented by cutting off the overcurrent, and the discharge with a safety mechanism that complies with the safety standard is excellent. Type surge absorber is intended to be realized.
【0007】[0007]
【課題を解決するための手段】上述した目的を達成すべ
く、本考案の放電型サージ吸収素子は、放電ガスを封入
した放電空間を設けて蓋部材により密閉状に被覆される
絶縁基板上に、微小放電間隙を隔てて対向する対の導電
性薄膜と、該導電性薄膜と電気的に接続され、主放電間
隙を隔てて対向する対の放電電極膜とを被着形成し、さ
らに上記絶縁基板の中央部分が浮いた状態に実装される
ための外部端子を上記絶縁基板における相対向する両側
端面より下方向に向かい略垂直方向に延出するととも
に、この外部端子は上記放電電極膜と導通し、かつ上記
導電性薄膜の抵抗値を、連続した過電流が流れたときに
上記絶縁基板が熱歪みにより砕裂し得る発熱量を生ずる
抵抗値としたことを特徴とするものである。In order to achieve the above-mentioned object, the discharge type surge absorbing element of the present invention has a discharge space in which a discharge gas is sealed and is provided on an insulating substrate hermetically covered by a lid member. a conductive thin film opposed pairs across a small discharge gap, are connected to the conductive thin film and electrically, the discharge electrode film opposed pairs deposited formed at a main discharge gap, and
In addition, the central part of the insulating board is mounted in a floating state.
External terminals for both sides facing each other in the insulating board
It extends downward from the end face and extends almost vertically.
In addition, the external terminal is electrically connected to the discharge electrode film, and the resistance value of the conductive thin film is a resistance value that generates a calorific value capable of crushing the insulating substrate due to thermal strain when a continuous overcurrent flows. It is characterized by that.
【0008】[0008]
【作用】放電ガスを封入した放電空間を設けて蓋部材に
より密閉状に被覆される絶縁基板表面に、微小放電間隙
を隔てて対向する導電性薄膜と、この導電性薄膜と電気
的に接続されるとともに主放電間隙を隔てて対向する放
電電極膜とを被着形成することにより、放電型サージ吸
収素子の形状は偏平化し、小型化することが容易とな
る。更に、絶縁基板の中央部分が浮いた状態に実装され
るための外部端子を絶縁基板における相対向する両側端
面より下方向に向かい略垂直方向に延出するとともに、
この外部端子は放電電極膜と導通することで、本考案の
保安機構付放電型サージ吸収素子は絶縁基板の中央部分
が浮いた状態に実装され、これにより絶縁基板は回路基
板等に密着状態で支持されないことから、絶縁基板に過
大なエネルギーが加わった場合に絶縁基板が砕裂し易く
なるものである。また、導電性薄膜の抵抗値を、連続し
た過電流が流れたときに絶縁基板が熱歪みにより砕裂し
得る発熱量を生ずる抵抗値としたことで、放電型サージ
吸収素子の定格を上回る連続した過電流が導電性薄膜を
流れた場合、絶縁基板が砕裂して放電空間内の放電ガス
に空気が流入し、これにより放電が消失して過電流を遮
断することとなり、本考案の保安機構付放電型サージ吸
収素子の焼損を防止することができる。A conductive thin film, which is opposed to the surface of an insulating substrate, which is covered with a lid member in a hermetically sealed manner, with a discharge space filled with a discharge gas, is electrically connected to the conductive thin film. In addition, by depositing and forming a discharge electrode film facing each other across the main discharge gap, the shape of the discharge type surge absorbing element is flattened, and the size can be easily reduced. Furthermore, the central part of the insulating substrate is mounted in a floating state.
External terminals for insulating both sides of the insulating substrate facing each other
While extending downward from the surface in a substantially vertical direction,
This external terminal is electrically connected to the discharge electrode film,
The discharge type surge absorber with a safety mechanism is the central part of the insulating substrate.
Are mounted in a floating state, which allows the insulating substrate to
Since it is not supported in close contact with the plate, etc.,
Insulation substrate easily breaks when a large amount of energy is applied
It will be. Further, the resistance value of the conductive thin film, that the insulating substrate has a resistance value that produces a calorific value which can be砕裂by thermal strain when continuous overcurrent flows exceeds the rating of the discharge surge absorbing element continuously When the overcurrent flows through the conductive thin film, the insulating substrate is crushed and air flows into the discharge gas in the discharge space, which causes the discharge to disappear and shut off the overcurrent. It is possible to prevent the discharge type surge absorber with a mechanism from burning.
【0009】[0009]
【実施例】図1は、本考案の保安機構付放電型サージ吸
収素子を示す分解斜視図、図2は本考案の保安機構付放
電型サージ吸収素子を示す断面図である。1 is an exploded perspective view showing a discharge type surge absorbing element with a safety mechanism of the present invention, and FIG. 2 is a sectional view showing a discharge type surge absorbing element with a safety mechanism of the present invention.
【0010】図中1は、本考案の保安機構付放電型サー
ジ吸収素子、2は0.4〜1.0mmの厚さのセラミッ
ク等からなる絶縁基板、3,3は絶縁基板2の表面に幅
10〜200μmの微小放電間隙4を隔ててルテニウム
(Ru)系ペーストを被着して形成した5〜100Ωの
抵抗値を有するサーメット抵抗等の導電性薄膜、5,5
は導電性薄膜3,3のそれぞれの端部と電気的に接続
し、0.4〜3.0mm程度の主放電間隙6,6を隔て
て対向し、モリブデン(Mo)、タングステン(W)、
六硼化ランタン(LaB6)、二ケイ化モリブデン(M
oSi2)、二酸化チタン(TiO2)等の耐スパッタ
性を有する導電物質からなる放電電極膜、7,7は上記
導電性薄膜3,3及び放電電極膜5,5から絶縁基板2
の側端面2a,2aにかけて被着形成された銀−パラジ
ウム(Ag−Pd)やニッケル(Ni)等からなる外部
端子接続被膜、8,8は上記外部端子接続被膜7,7と
接続され、上記絶縁基板2における相対向する両側端面
2a,2aに一端を固設し、他端を回路基板等に対する
接続部として絶縁基板2の下方に向かい略垂直方向に延
出した導電性金属からなる外部端子、9,9は上記導電
性薄膜3,3の露出部分を被覆することで、この露出部
分における沿面放電を防止するための非結晶化ガラス等
からなる保護膜、10は四方に鍔縁10aを形成し、ガ
ラスやセラミック等の絶縁物質(本実施例にあってはガ
ラス)からなる蓋部材、11は蓋部材10を絶縁基板2
表面に密閉状に封着するための低融点ガラスからなる封
着部材である。上記蓋部材10は、3〜10mm程度の
高さを有し、導電性薄膜3,3間の微小放電間隙4と放
電電極膜5,5間の主放電間隙6,6とを被覆するとと
もに、鍔縁10aを絶縁基板2に封着することにより蓋
部材10の内方に放電空間12を形成している。そし
て、この放電空間12にヘリウム(He)、ネオン(N
e)、アルゴン(Ar)、キセノン(Xe)等の希ガス
の単体もしくは混合物を主体とする放電ガスを封入して
いる。尚、上記蓋部材10は平板状のものでもよく、こ
の場合には、絶縁基板2との間にスペーサ等を配して放
電空間12を形成すればよい。また、上記導電性薄膜
3,3における微小放電間隙4と対向する部分には、放
電電極膜5,5と同様のモリブデン(Mo)、タングス
テン(W)、六硼化ランタン(LaB6)、二ケイ化モ
リブデン(MoSi2)、二酸化チタン(TiO2)等
の耐スパッタ性を有する導電物質13,13を被着形成
している。これにより、導電性薄膜3,3のスパッタに
よる微小放電間隙4の絶縁劣化を防止し、寿命特性の向
上を図っている。勿論、上記導電性薄膜3,3に導電物
質13,13を被着形成しない放電型サージ吸収素子で
あっても、サージ吸収特性そのものは変わることはな
い。In the figure, 1 is a discharge type surge absorbing element with a safety mechanism of the present invention, 2 is an insulating substrate made of ceramic or the like having a thickness of 0.4 to 1.0 mm, and 3 and 3 are on the surface of the insulating substrate 2. A conductive thin film such as a cermet resistor having a resistance value of 5 to 100 Ω formed by depositing a ruthenium (Ru) -based paste with a small discharge gap 4 having a width of 10 to 200 μm, 5, 5
Are electrically connected to the respective end portions of the conductive thin films 3 and 3 and face each other with a main discharge gap 6 and 6 of about 0.4 to 3.0 mm, and molybdenum (Mo), tungsten (W),
Lanthanum hexaboride (LaB 6 ), molybdenum disilicide (M
OSI 2), the discharge electrode film made of a conductive substance having a sputtering resistance, such as titanium dioxide (TiO 2), 7,7 is insulated from the conductive thin film 3, 3 and the discharge electrode film 5 and 5 substrate 2
External terminal connection coatings made of silver-palladium (Ag-Pd), nickel (Ni), or the like, deposited on the side end surfaces 2a, 2a of the above, 8 and 8 are connected to the external terminal connection coatings 7 and 7, and One end is fixedly provided on both end surfaces 2a, 2a of the insulating substrate 2 which face each other, and the other end extends in a substantially vertical direction downward of the insulating substrate 2 as a connecting portion for a circuit board or the like.
External terminal made of leaving the conductive metal, 9, 9 to coat the exposed portion of the conductive thin film 3, 3, a protective film made of non-crystallized glass for preventing creeping discharge in the exposed portion Numeral 10 is a lid member formed on all sides with a brim 10a and made of an insulating material (glass in this embodiment) such as glass or ceramic.
A sealing member made of low-melting glass for hermetically sealing the surface. The lid member 10 has a height of about 3 to 10 mm and covers the minute discharge gap 4 between the conductive thin films 3 and 3 and the main discharge gaps 6 and 6 between the discharge electrode films 5 and 5. The discharge space 12 is formed inside the lid member 10 by sealing the brim 10a to the insulating substrate 2. Then, in the discharge space 12, helium (He), neon (N)
e), argon (Ar), xenon (Xe), and other rare gases are contained in a discharge gas mainly containing a single substance or a mixture. The lid member 10 may have a flat plate shape. In this case, a spacer or the like may be arranged between the lid member 10 and the insulating substrate 2 to form the discharge space 12. Further, in the portions of the conductive thin films 3 and 3 facing the minute discharge gap 4, molybdenum (Mo), tungsten (W), lanthanum hexaboride (LaB 6 ), the same as in the discharge electrode films 5 and 5, Conductive substances 13 and 13 having sputter resistance such as molybdenum silicide (MoSi 2 ) and titanium dioxide (TiO 2 ) are deposited. This prevents insulation deterioration of the minute discharge gap 4 due to sputtering of the conductive thin films 3 and 3 and improves life characteristics. Of course, even with a discharge type surge absorbing element in which the conductive materials 13 and 13 are not formed on the conductive thin films 3 and 3, the surge absorbing characteristic itself does not change.
【0011】然して、上述した如き構成からなる保安機
構付放電型サージ吸収素子1において、機器のプリント
回路基板等に実装された状態で外部から外部端子8,8
を介して誘導雷等のサージが印加されると、まず微小放
電間隙4を介した導電物質13,13間に電位差が生
じ、これにより微小放電間隙4に電子が放出されて沿面
放電が発生する。次いで、この沿面放電は、放電に伴っ
て生ずる電子のプライミング効果によってグロー放電へ
と移行する。そして、このグロー放電がサージ電流の増
加によって主放電間隙6へと転移し、更にアーク放電に
移行してサージを吸収するものである。However, in the discharge type surge absorbing element 1 with a safety mechanism having the above-mentioned structure, the external terminals 8 and 8 are externally applied while being mounted on the printed circuit board of the equipment.
When a surge such as inductive lightning is applied via the micro electric discharge gap, a potential difference is generated between the conductive materials 13, 13 via the micro electric discharge gap 4, so that electrons are emitted to the micro electric discharge gap 4 and a creeping discharge is generated. . Next, this creeping discharge shifts to glow discharge due to the priming effect of electrons generated by the discharge. Then, this glow discharge is transferred to the main discharge gap 6 due to the increase of the surge current, and is further transferred to arc discharge to absorb the surge.
【0012】また、本考案の保安機構付放電型サージ吸
収素子1において、電力線との接触事故やこのような事
態を想定した過電圧試験によって、放電型サージ吸収素
子の定格を上回る連続した過電圧が印加された場合に
は、微小放電間隙4における放電は主放電間隙6に転移
せず、微小放電間隙4または微小放電間隙4および主放
電間隙6で放電が持続し、この放電を通じて連続した過
電流が流れることとなる。そして、このような短絡状態
となった場合には、導電性薄膜3,3がその抵抗値によ
って発熱し、絶縁基板2に熱歪みが生じて砕裂し、これ
により放電空間12内の放電ガスに空気が流入して放電
を消失させ、その結果過電流を遮断するものである。更
に、本考案の保安機構付放電型サージ吸収素子1にあっ
ては、絶縁基板2における相対向する両側端面2a,2
aに、外部端子8,8が絶縁基板2に対して略垂直方向
に固設されているので、外部端子8,8を回路基板等に
接続する際に所謂チップ型電子部品の如く回路基板等に
密着状態で支持されることなく、回路基板等から浮いた
状態に実装され、これにより導電性薄膜3,3が絶縁基
板2を砕裂し得る発熱を生じた場合に、絶縁基板2が砕
裂し易くなるものである。Further, in the discharge type surge absorbing element 1 with a safety mechanism of the present invention, a continuous overvoltage exceeding the rating of the discharge type surge absorbing element is applied by an overvoltage test assuming a contact accident with a power line or such a situation. In this case, the discharge in the minute discharge gap 4 does not transfer to the main discharge gap 6, the discharge continues in the minute discharge gap 4 or the minute discharge gap 4 and the main discharge gap 6, and a continuous overcurrent is generated through this discharge. It will flow. Then, when such a short circuit occurs, the conductive thin films 3 and 3 generate heat due to their resistance values, and the insulating substrate 2 is thermally distorted and shattered, whereby the discharge gas in the discharge space 12 is discharged. The air flows into the device to extinguish the discharge, and as a result, the overcurrent is shut off. Further, in the discharge type surge absorber 1 with a safety mechanism of the present invention, the opposite end surfaces 2a, 2 of the insulating substrate 2 facing each other are provided.
Since the external terminals 8 and 8 are fixed to a in a direction substantially perpendicular to the insulating substrate 2, when connecting the external terminals 8 and 8 to a circuit board or the like, a circuit board or the like such as a so-called chip type electronic component is connected. When the conductive thin films 3 and 3 generate heat that may crush the insulating substrate 2, the insulating substrate 2 is crushed when the conductive thin films 3 are crushed. It is easy to tear.
【0013】[0013]
【考案の効果】以上詳述した如く、本考案の保安機構付
放電型サージ吸収素子によれば、放電空間を設けて蓋部
材により密閉状に被覆される絶縁基板表面に、微小放電
間隙を隔てて対向する導電性薄膜と、この導電性薄膜と
導通し主放電間隙を隔てて対向する放電電極膜とを被着
形成することで、上記構成の放電型サージ吸収素子の形
状は偏平化して小型化することが容易となり、したがっ
て部品収容スペースの少ない小型の機器内に収容するこ
とが可能になる等、保安機構付放電型サージ吸収素子の
使用用途を拡大し、その利用価値を高めるものである。
更に、絶縁基板の中央部分が浮いた状態に実装されるた
めの外部端子を絶縁基板における相対向する両側端面よ
り下方向に向かい略垂直方向に延出するとともに、この
外部端子は放電電極膜と導通することで、本考案の保安
機構付放電型サージ吸収素子は絶縁基板の中央部分が浮
いた状態に実装され、これにより絶縁基板は回路基板等
に密着状態で支持されないことから、絶縁基板に過大な
エネルギーが加わった場合に絶縁基板が砕裂し易くなる
ものである。また、本考案の保安機構付放電型サージ吸
収素子において、導電性薄膜の抵抗値を、連続した過電
流が流れたときに絶縁基板が熱歪みにより砕裂し得る発
熱量を生ずる抵抗値としたことで、電力線との接触事故
やこのような事態を想定した過電圧試験によって、放電
型サージ吸収素子の定格を上回る連続する過電流が流れ
た場合に、導電性薄膜の多大な発熱により絶縁基板を砕
裂して放電ガスに空気を流入させることで放電を消失さ
せ、その結果過電流を遮断して放電型サージ吸収素子に
よる焼損事故を防止し、ひいては優れた安全性を有し各
種安全規格にも充分適合する保安機構付放電型サージ吸
収素子を実現することができるものである。As described above in detail, according to the discharge type surge absorbing element with a safety mechanism of the present invention, a minute discharge gap is formed on the surface of the insulating substrate which is hermetically covered by the lid member with the discharge space. By forming a conductive thin film facing each other and a discharge electrode film which is conductive with the thin conductive film and faces the main discharge gap, the shape of the discharge type surge absorber with the above configuration is flattened and small. It is possible to expand the usage of the discharge type surge absorption element with a safety mechanism and to increase its utility value, since it can be easily realized and can be accommodated in a small device with a small space for accommodating components. .
In addition, the central part of the insulating board is mounted in a floating state.
External terminals on both sides of the insulating substrate facing each other.
And extends in a substantially vertical direction,
Since the external terminals are electrically connected to the discharge electrode film, the safety of the present invention is improved.
The discharge type surge absorber with a mechanism floats in the center of the insulating substrate.
It is mounted as it is, so that the insulating board becomes a circuit board, etc.
Since it is not supported in close contact with the
Insulative substrate easily breaks when energy is applied
Things. In addition, in the discharge type surge absorber with a safety mechanism of the present invention, the resistance value of the conductive thin film is set to a resistance value that generates a calorific value capable of crushing the insulating substrate due to thermal strain when a continuous overcurrent flows . Therefore, when a continuous overcurrent exceeding the rating of the discharge type surge absorption element flows by an overvoltage test assuming such a situation as a contact with a power line or such a situation, the insulating substrate is heated due to the large heat generation of the conductive thin film. Disruption is caused by crushing and injecting air into the discharge gas, and as a result, overcurrent is cut off to prevent burnout accidents due to the discharge type surge absorbing element, which in turn has excellent safety and complies with various safety standards. It is possible to realize a discharge type surge absorber with a safety mechanism that is well suited.
【図1】本考案の保安機構付放電型サージ吸収素子の分
解斜視図である。FIG. 1 is an exploded perspective view of a discharge type surge absorber with a safety mechanism according to the present invention.
【図2】本考案の保安機構付放電型サージ吸収素子の断
面図である。FIG. 2 is a cross-sectional view of a discharge type surge absorber with a safety mechanism of the present invention.
【図3】従来のサージ吸収素子の概略斜視図である。FIG. 3 is a schematic perspective view of a conventional surge absorbing element.
【図4】従来のサージ吸収素子の概略断面図である。FIG. 4 is a schematic sectional view of a conventional surge absorbing element.
1 保安機構付放電型サージ吸収素子 2 絶縁基板 2a 側端面 3 導電性薄膜 4 微小放電間隙 5 放電電極膜 6 主放電間隙 8 外部端子 10 蓋部材 12 放電空間 1 Discharge type surge absorber with safety mechanism 2 End face of insulating substrate 2a 3 Conductive thin film 4 Micro discharge gap 5 Discharge electrode film 6 Main discharge gap 8 External terminal 10 Lid member 12 Discharge space
Claims (1)
部材により密閉状に被覆される絶縁基板上に、微小放電
間隙を隔てて対向する対の導電性薄膜と、該導電性薄膜
と電気的に接続され、主放電間隙を隔てて対向する対の
放電電極膜とを被着形成し、さらに上記絶縁基板の中央
部分が浮いた状態に実装されるための外部端子を上記絶
縁基板における相対向する両側端面より下方向に向かい
略垂直方向に延出するとともに、この外部端子は上記放
電電極膜と導通し、かつ上記導電性薄膜の抵抗値を、連
続した過電流が流れたときに上記絶縁基板が熱歪みによ
り砕裂し得る発熱量を生ずる抵抗値としたことを特徴と
する保安機構付放電型サージ吸収素子。1. A pair of conductive thin films facing each other with a small discharge gap on an insulating substrate which is hermetically covered with a lid member and which is provided with a discharge space filled with a discharge gas, and the conductive thin film and the electrically conductive thin film. And a pair of discharge electrode films facing each other across a main discharge gap are formed by deposition, and the center of the insulating substrate is further formed.
The external terminal for mounting the part in a floating state
Face downward from the opposite end faces of the edge substrate
While extending in a substantially vertical direction, this external terminal
And a resistance value of the conductive thin film which is electrically conductive with the electrode film and is a resistance value that generates a calorific value capable of crushing due to thermal strain of the insulating substrate when a continuous overcurrent flows. Discharge type surge absorber with safety mechanism.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP656191U JP2509812Y2 (en) | 1991-01-23 | 1991-01-23 | Discharge type surge absorber with safety mechanism |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP656191U JP2509812Y2 (en) | 1991-01-23 | 1991-01-23 | Discharge type surge absorber with safety mechanism |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0498291U JPH0498291U (en) | 1992-08-25 |
JP2509812Y2 true JP2509812Y2 (en) | 1996-09-04 |
Family
ID=31737927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP656191U Expired - Fee Related JP2509812Y2 (en) | 1991-01-23 | 1991-01-23 | Discharge type surge absorber with safety mechanism |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2509812Y2 (en) |
-
1991
- 1991-01-23 JP JP656191U patent/JP2509812Y2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0498291U (en) | 1992-08-25 |
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