JP2020161823A - Processing method of electronic component - Google Patents

Abstract

To provide a resin film for temporary fixing, which can satisfactorily process an electronic component and can be easily peeled off from the processed electronic component and a support.SOLUTION: A processing method of an electronic component includes a step of temporarily fixing an electronic component and a support via a temporary fixing resin film 20, a processing step of processing the electronic component temporarily fixed to the support, and a separation step of separating the processed electronic component from the support and the temporary fixing resin film. The temporary fixing resin film includes a first layer 21 containing a first thermoplastic resin having a glass transition temperature of -50°C to 50°C and a second layer 22 containing a thermoplastic resin having a glass transition temperature of -50°C to 50°C and a curable component.SELECTED DRAWING: Figure 1

Description

The present invention relates to a resin film for temporary fixing.

With the increasing functionality of electronic devices such as smartphones and tablet PCs, stacked MCPs (Multi Chip Package) in which semiconductor elements are stacked in multiple stages to increase the capacity have become widespread. For mounting semiconductor devices, a film-like adhesive that is advantageous in the mounting process is widely used as an adhesive for die bonding. However, in spite of the tendency toward multifunctionality, the current method of connecting semiconductor elements using wire bonds has a limit in data processing speed, so that the operation of electronic devices tends to be slow. It is in. In addition, there is a growing need to keep power consumption low and use it for a long time without charging, so power saving is also required. From this point of view, in recent years, electronic device devices having a new structure in which semiconductor elements are connected to each other by through electrodes instead of wire bonds have been developed for the purpose of further speeding up and power saving.

Although electronic devices with a new structure have been developed in this way, there is still a demand for higher capacity, and development of a technique capable of stacking semiconductor elements in multiple stages is underway regardless of the package structure. However, in order to stack more semiconductor elements in a limited space, stable thinning of the semiconductor elements is indispensable.

For example, at present, in the grinding process for thinning a semiconductor element, it is mainstream to attach a support tape, so-called BG tape, to the semiconductor element and grind in a supported state. However, the thinned semiconductor element tends to warp due to the influence of the circuit applied to the surface. Therefore, BG tape, which is a tape material that is easily deformed, cannot sufficiently support a thin semiconductor element.

Against this background, a thinning process for semiconductor devices using a silicon wafer or glass, which is a material harder than BG tape, as a support has been proposed, and a material for adhering the semiconductor element to the silicon wafer or glass support. Has been proposed. In such an adhesive, it is required as an important property that it can be peeled off from the support without damaging the semiconductor element after grinding. Therefore, a peeling method for satisfying these characteristics has been enthusiastically studied. Examples of the peeling method include a method using dissolution of the pressure-sensitive adhesive with a solvent, a method of improving the peelability by removing the stickiness by heating, a method of modifying or eliminating the pressure-sensitive adhesive by laser irradiation, and the like. Patent Documents 1 and 2). However, since it takes time to dissolve the pressure-sensitive adhesive with a solvent, productivity tends to decrease. Further, the method of removing the adhesiveness by heating cannot be used in a process application for forming a through electrode or the like because there is a concern that the heating may affect the semiconductor element and the heat resistance is inferior. On the other hand, in the method of modifying or eliminating the adhesive by laser irradiation, the introduction of expensive laser equipment is indispensable, and a considerable investment is indispensable for the application of such a process.

Patent No. 4565804 Patent No. 49366667

In recent years, thinning of electronic components such as semiconductor elements has been promoted for the purpose of increasing the capacity of electronic devices, and adhesives for fixing electronic components to supports such as silicon wafers and glass during processing have been developed. ing. However, there is room for further improvement in adhesives in terms of workability and the need for high capital investment. In particular, most of such adhesives are liquid, and are applied to electronic parts or supports by spin coating or the like, and are used by forming a film by heating, UV irradiation or the like. However, in such a case, due to the variation of the adhesive at the time of application, the thickness of the electronic component after processing tends to vary among individual electronic parts, and in the spin coating, the material scattered by the rotation at the time of application is discarded. There are issues such as the need to do.

Further, the electronic components to be processed are not limited to those having high smoothness, and there is an increasing tendency to process a wafer having a solder ball on the circuit surface and having a surface unevenness of more than 80 μm. In the case of a surface having such large irregularities, if the irregularities are sufficiently embedded, it becomes difficult to peel off the adhesive from the surface. Further, if the adhesive strength of the solder balls is insufficient, there is a concern that the solder balls may be chipped when the adhesive is peeled off.

When peeling an electronic component and a support from an adhesive after processing, if the peeling strength of the electronic component surface of the adhesive is close to the peeling strength of the support surface of the adhesive, the electronic component or the adhesive is likely to be broken. It tends to be. Due to the breakage of the pressure-sensitive adhesive, adhesive residue of the pressure-sensitive adhesive is generated on both the semiconductor element and the support after peeling.

INDUSTRIAL APPLICABILITY The present invention has been made in view of the above circumstances, and provides a temporary fixing resin film capable of satisfactorily processing an electronic component and easily peeling off from the processed electronic component and a support. The purpose is to do.

The present invention includes a first layer containing a first thermoplastic resin having a glass transition temperature of −50 ° C. to 50 ° C., a second thermoplastic resin having a glass transition temperature of −50 ° C. to 50 ° C., and curing. Provided is a temporary fixing resin film comprising a second layer containing a sex component.

According to the resin film for temporary fixing according to the present invention, by having the first and second layers, it is possible to satisfactorily process the electronic component, and from the processed electronic component and the support. It can be easily peeled off. That is, when the resin film includes the two layers, the peel strength with respect to the electronic component surface and the peel strength with respect to the support surface can be adjusted, respectively, and damage to the electronic component or breakage of the adhesive can be prevented. Further, by attaching the second layer having the specific composition to the surface of the support, it is possible to achieve both the physical properties required at the time of processing (for example, shear viscosity) and the releasability from the support. Further, since it is in the form of a film, the film thickness can be easily controlled, and the variation in thickness between individual electronic components can be reduced. Further, the temporary fixing resin film according to the present invention can be attached to an electronic component or a support by a simple method such as laminating, and is excellent in workability.

In the temporary fixing resin film according to the present invention, the content of the curable component in the second layer may be 10 to 500 parts by mass with respect to 100 parts by mass of the second thermoplastic resin. When the content of the curable component in the second layer is within the above range, the temporary fixing resin film can have high levels of low-temperature stickability, heat resistance, curability and peelability.

In the temporary fixing resin film according to the present invention, the thickness of the first layer may be 10 to 350 μm, and the thickness of the second layer may be 10 to 350 μm. When the thickness of the temporary fixing resin film is within the above range, it is possible to sufficiently embed the unevenness of the surface of the electronic component such as a semiconductor element, and it is possible to more reliably fix the electronic component and the support. it can.

In the temporary fixing resin film according to the present invention, the thickness of the first layer and the thickness of the second layer may satisfy the relationship of the following formula (1).
(1/10) a ≦ b ≦ 10a ・ ・ ・ (1)
[In the formula (1), a represents the thickness of the first layer, and b represents the thickness of the second layer. ]
When the thickness ratio is within the above range, the peel strength of the electronic component surface and the peel strength of the adhesive support surface can be easily adjusted.

In the temporary fixing resin film according to the present invention, the first thermoplastic resin and / or the second thermoplastic resin has a crosslinkable functional group and has a weight average molecular weight of 100,000 to 1.2 million. It may be a resin. In this case, the first layer and the second layer can exhibit better peelability.

In the temporary fixing resin film according to the present invention, the curable component may be a thermosetting resin.

In the temporary fixing resin film according to the present invention, the first layer and / or the second layer may further contain a silicone compound.

In the temporary fixing resin film according to the present invention, the first layer and / or the second layer may further contain a curing accelerator.

According to the present invention, it is possible to provide a temporary fixing resin film that can satisfactorily process an electronic component and can be easily peeled off from the processed electronic component and a support.

(A) is a top view showing one embodiment of a temporary fixing resin film sheet having a first layer and a second layer, and (B) is a top view along the line I-I of (A). It is a schematic cross-sectional view. (A) is a top view showing one embodiment of the first resin sheet, and (B) is a schematic cross-sectional view taken along line II-II of (A). (A) is a top view showing one embodiment of the second resin sheet, and (B) is a schematic cross-sectional view taken along the line III-III of (A). (A) is a top view showing another embodiment of the resin film sheet for temporary fixing which concerns on this invention, and (B) is a schematic cross-sectional view along line IV-IV of (A). (A), (B) and (C) are schematic cross-sectional views for explaining one embodiment of a method of processing an electronic component, and (D) is an upper surface showing an electronic component after processing, for example, after grinding. It is a figure. It is a schematic cross-sectional view for demonstrating one Embodiment of the separation process which separates a processed electronic component from a support and a resin film for temporary fixing. It is a schematic cross-sectional view for demonstrating one Embodiment of the manufacturing method of an electronic device apparatus.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and duplicate description will be omitted. Further, the dimensional ratio in the drawings is not limited to the ratio shown in the drawings. However, the present invention is not limited to the following embodiments.

[Resin film for temporary fixing]
The temporary fixing resin film according to the present embodiment includes a first layer containing a first thermoplastic resin and a second layer containing a second thermoplastic resin and a curable component.

FIG. 1 (A) is a top view showing one embodiment of the temporary fixing resin film of the present embodiment, and FIG. 1 (B) is a schematic cross-sectional view taken along the line I-I of FIG. 1 (A). is there.

The temporary fixing resin film sheet 1 shown in FIG. 1 includes a support film 10, a first layer 21, a second layer 22, and a support film 10 in this order, from the first layer 21 and the second layer 22. It has a temporary fixing resin film 20.

By having two layers having different compositions, the resin film for temporary fixing according to the present embodiment makes it possible to prepare the peel strength of the electronic component surface of the adhesive and the peel strength of the support surface of the adhesive, and temporarily fix the film. It can be easily peeled off from both the electronic component fixed to the support and the support via the resin film. Further, since it is a film-like adhesive, it is easier to control the film thickness, and it is possible to reduce the variation in thickness between individual electronic components. Further, the temporary fixing resin film according to the present embodiment can be attached to an electronic component or a support by a simple method such as laminating, and has excellent workability.

(First layer)
The first layer contains the first thermoplastic resin (hereinafter, may be referred to as (a1) thermoplastic resin). The thermoplastic resin (a1) can be used without particular limitation as long as it is a resin having thermoplasticity at least before the film is laminated on an electronic component or a support. The thermoplastic resin may be a resin that forms a crosslinked structure by heating or the like.

As the thermoplastic resin (a1), a polymer having a crosslinkable functional group can be used. Examples of the polymer having a crosslinkable functional group include a thermoplastic polyimide resin, a (meth) acrylic copolymer having a crosslinkable functional group, a urethane resin polyphenylene ether resin, a polyetherimide resin, a phenoxy resin, and a modified polyphenylene ether resin. Be done. Among these, a (meth) acrylic copolymer having a crosslinkable functional group is preferable. In addition, in this specification, (meth) acrylic is used in the meaning of either acrylic or methacrylic. One type of thermoplastic resin may be used alone, or two or more types may be used in combination.

As the (meth) acrylic copolymer having a crosslinkable functional group, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or a commercially available product may be used.

The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain or at the end of the polymer chain. Examples of the crosslinkable functional group include an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, and a carboxyl group. One type of crosslinkable functional group may be used alone, or two or more types may be used in combination.

(A1) The glass transition temperature of the thermoplastic resin (hereinafter, may be referred to as “Tg”) is preferably −50 ° C. to 50 ° C., more preferably −30 ° C. to 20 ° C. .. When Tg is in such a range, more sufficient fluidity can be obtained while suppressing the deterioration of handleability due to the excessive increase in the tack force of the first layer, and the elasticity of the sheet after curing can be obtained. Since the rate can be made lower, it is possible to further prevent the peel strength from becoming too high.

Tg is an intermediate point glass transition temperature value when the thermoplastic resin is measured using differential scanning calorimetry (DSC, for example, “Thermo Plus 2” manufactured by Rigaku Co., Ltd.). Specifically, the Tg is a midpoint glass transition calculated by a method based on JIS K 7121: 1987 by measuring the change in calorific value under the conditions of a heating rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. The temperature.

(A1) The weight average molecular weight of the thermoplastic resin is not particularly limited, and is preferably 100,000 to 1.2 million, more preferably 200,000 to 1,000,000. When the weight average molecular weight of the thermoplastic resin is in such a range, it becomes easier to secure the film forming property and the fluidity. The weight average molecular weight is a polystyrene-equivalent value using a calibration curve of standard polystyrene by gel permeation chromatography (GPC).

The first layer is, if necessary, a silicone compound (hereinafter, may be referred to as (a2) silicone compound) and a curing accelerator (hereinafter, referred to as (a3) curing accelerator) in addition to the (a1) thermoplastic resin. In some cases) and other ingredients may be included.

The silicone compound (a2) can be used without particular limitation as long as it has a polysiloxane structure. For example, silicone-modified resin, straight silicone oil, non-reactive modified silicone oil, reactive modified silicone oil and the like can be mentioned. The silicone compound may be used alone or in combination of two or more.

Since the first layer contains a silicone compound, it is easy to peel off the temporary fixing resin film from the semiconductor chip, the sealant, and the support even at a low temperature of 100 ° C. or lower without using a solvent. It becomes possible to peel off.

When the silicone compound used in the present embodiment is a silicone-modified resin, there is no particular limitation as long as it is a silicone-modified resin. As the silicone-modified resin, a silicone-modified alkyd resin is preferable. Since the first layer contains the silicone-modified alkyd resin, when the temporary fixing resin film is peeled from the electronic component, it can be peeled more easily without using a solvent.

As a method for obtaining a silicone-modified alkyd resin, for example, (i) a normal synthetic reaction for obtaining an alkyd resin, that is, when a polyvalent acol is reacted with a fatty acid, a polybasic acid, or the like, organopolysiloxane is used as an alcohol component. Examples thereof include a method of reacting at the same time, and (ii) a method of reacting an organopolysiloxane with a general alkyd resin synthesized in advance.

Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol, glycerin, and trimethylolethane. Examples thereof include trihydric alcohols such as trimethylolpropane, and tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannit, and sorbit. One of these may be used alone, or two or more thereof may be used in combination.

Examples of the polybasic acid used as a raw material for the alkyd resin include aromatic polybasic acids such as maleic anhydride, terephthalic acid, isophthalic acid and trimetic anhydride, and aliphatic saturated polys such as succinic acid, adipic acid and sebacic acid. Aliphatic unsaturated polybasic acids such as basic acid, maleic acid, maleic anhydride, fumaric acid, itaconic acid, and citraconic anhydride, cyclopentadiene-maleic anhydride adduct, terpen-maleic anhydride adduct, rosin-maleic anhydride Examples thereof include polybasic acid produced by a deal-alder reaction such as an acid adduct. One of these may be used alone, or two or more thereof may be used in combination.

The alkyd resin may further contain a modifier or a cross-linking agent.

Modifiers include octyl acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linoleic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, coconut oil, flaxseed oil, castor oil, castor oil, dehydrated Castor oil, soybean oil, safflower oil, fatty acids thereof and the like can be used. One of these may be used alone, or two or more thereof may be used in combination.

Examples of the cross-linking agent include amino resins such as melamine resin and urea resin, urethane resins, epoxy resins, and phenol resins. Among these, the amino resin is preferable because an aminoalkyd resin crosslinked with the amino resin can be obtained. One type of cross-linking agent may be used alone, or two or more types may be used in combination.

The silicone-modified alkyd resin can be used in combination with an acidic catalyst as a curing catalyst. The acidic catalyst is not particularly limited, and can be appropriately selected from known acidic catalysts as the cross-linking reaction catalyst of the alkyd resin. As such an acidic catalyst, for example, an organic acidic catalyst such as p-toluenesulfonic acid or methanesulfonic acid is suitable. One type of acidic catalyst may be used alone, or two or more types may be used in combination.

Examples of the silicone-modified alkyd resin as described above include Tessfine TA31-209E (manufactured by Hitachi Chemical Co., Ltd., trade name).

When the silicone compound used in the present embodiment is a modified silicone oil, a polyether-modified silicone, an alkyl-modified silicone, and an epoxy-modified silicone are preferable.

The silicone as described above can be used without particular limitation as long as it is compatible with the high molecular weight substance. Examples of silicones include SH3773M, L-7001, SH-550, SH-710 manufactured by Toray Dow Corning Co., Ltd., X-22-163, KF-105, X-22-163B manufactured by Shinetsu Silicone Co., Ltd. Examples thereof include X-22-163C and BYK-UV3500 manufactured by BYK.

The blending amount of the (a2) silicone compound in the first layer is preferably 0 to 100 parts by mass, more preferably 2 to 80 parts by mass with respect to 100 parts by mass of the (a1) thermoplastic resin. (A2) When the blending amount of the silicone compound is within the above range, it is possible to achieve both the adhesiveness during processing of electronic components and the peelability after processing at a higher level.

Examples of the curing accelerator (a3) include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo. [5,4,5] Undecene-7-tetraphenylborate and the like can be mentioned. These may be used individually by 1 type and may be used in combination of 2 or more type.

In the first layer, when (a1) the thermoplastic resin contains a (meth) acrylic copolymer having an epoxy group, a curing accelerator that promotes curing of the epoxy group contained in the acrylic copolymer is contained. Is preferable.

The blending amount of the (a3) curing accelerator in the first layer is preferably 0.01 to 2.0 parts by mass with respect to 100 parts by mass of the (a1) thermoplastic resin. When the blending amount of the (a3) curing accelerator is 0.01 parts by mass or more with respect to 100 parts by mass of the (a1) thermoplastic resin, the first layer is sufficiently cured in the thermal history in the manufacturing process of the semiconductor device. Therefore, the electronic component and the support can be fixed more reliably. (A3) When the blending amount of the curing accelerator is 2.0 parts by mass or less with respect to 100 parts by mass of the (a1) thermoplastic resin, the melt viscosity of the temporary fixing resin film is unlikely to increase due to heating during the manufacturing process. Therefore, the storage stability of the film tends to be further improved.

Examples of other components include inorganic fillers, organic fillers, silane coupling agents, curable components and the like.

Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; and non-metal inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramics. The inorganic filler can be selected according to the desired function. The metal filler can be added for the purpose of imparting thixotropic properties to the film. The non-metallic inorganic filler can be added for the purpose of imparting low thermal expansion and low hygroscopicity to the film. One type of inorganic filler may be used alone, or two or more types may be used in combination.

The inorganic filler preferably has an organic group on its surface. Since the surface of the inorganic filler is modified with organic groups, it is easy to improve the dispersibility in an organic solvent when preparing a resin composition for forming a film, and the adhesion and heat resistance of the film. It becomes.

The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and the inorganic filler and stirring at a temperature of 30 ° C. or higher. .. It can be confirmed by UV (ultraviolet) measurement, IR (infrared) measurement, XPS (X-ray photoelectron spectroscopy) measurement, etc. that the surface of the inorganic filler is modified by an organic group.

In the formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group and a methacryloyl group. Indicates an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently indicate an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an isopropyl group and an isobutyl group. Be done. The alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group and a pentyl group from the viewpoint of easy availability. From the viewpoint of heat resistance, X is preferably an amino group, a glycidoxy group, a mercapto group and an isocyanate group, and more preferably a glycidoxy group and a mercapto group. The s in the formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing the film fluidity at high heat and improving the heat resistance.

Preferred silane coupling agents are, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-Aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3- Glycydoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanoxidetriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-Mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propaneamine, N, N'-bis (3-) Examples thereof include (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, and polyethoxydimethylsiloxane. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isopropylpropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane and 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferred. One type of silane coupling agent may be used alone, or two or more types may be used in combination.

The amount of the coupling agent used is preferably 0.01 to 50 parts by mass, preferably 0.05 parts by mass, based on 100 parts by mass of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Parts to 20 parts by mass are more preferable, and 0.5 to 10 parts by mass is further preferable from the viewpoint of improving heat resistance.

The blending amount of the inorganic filler in the first layer is 300 with respect to 100 parts by mass of the (a1) thermoplastic resin from the viewpoint of improving the handleability of the temporary fixing resin film in the B stage state and improving the low thermal expansion property. It is preferably parts by mass or less, more preferably 200 parts by mass or less, and even more preferably 100 parts by mass or less. The lower limit of the content of the inorganic filler is not particularly limited, and is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin. By setting the content of the inorganic filler in the above range, it tends to be possible to impart a desired function while sufficiently ensuring the adhesiveness of the first layer.

Examples of the organic filler include carbon, rubber-based filler, silicone-based fine particles, polyamide fine particles, polyimide fine particles, and the like. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and further preferably 100 parts by mass or less with respect to 100 parts by mass of the (a1) thermoplastic resin. The lower limit of the content of the organic filler is not particularly limited, and is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

In addition, the first layer can contain a curable component such as an epoxy resin, a phenol resin, or a bismaleimide resin.

The thickness of the first layer 21 is not particularly limited, and from the viewpoint of sufficiently embedding the unevenness of the surface of the electronic component such as the semiconductor element, the thickness after drying is the unevenness of the surface of the electronic component such as the semiconductor element. The thickness is preferably equal to or less than, preferably 10 to 350 μm. When the thickness is 10 μm or more, the variation in the thickness at the time of coating is small, and since the thickness is sufficient, the strength of the film or the cured product of the film is good, and the electronic parts such as semiconductor elements The unevenness of the surface can be more sufficiently embedded. If the thickness is 350 μm or less, it is difficult to be crushed when it is bonded to the second layer 22, so that the thickness of the resin film for temporary fixing is unlikely to vary, and the amount of residual solvent in the film can be reduced by sufficient drying. It becomes easy to reduce, and foaming when the cured product of the film is heated can be further reduced.

(Second layer)
The second layer contains a second thermoplastic resin (hereinafter, may be referred to as (b1) thermoplastic resin) and a curable component (hereinafter, may be referred to as (b2) curable component).

(B1) The thermoplastic resin can be used without particular limitation as long as it is a resin having thermoplasticity at least before the film is laminated on an electronic component or a support. The thermoplastic resin may be a resin that forms a crosslinked structure by heating or the like.

As the (b1) thermoplastic resin used in the present embodiment, a polymer having a crosslinkable functional group can be used. Examples of the polymer having a crosslinkable functional group include a thermoplastic polyimide resin, a (meth) acrylic copolymer having a crosslinkable functional group, a urethane resin polyphenylene ether resin, a polyetherimide resin, a phenoxy resin, and a modified polyphenylene ether resin. Be done. Among these, a (meth) acrylic copolymer having a crosslinkable functional group is preferable. One type of the above resin may be used alone, or two or more types may be used in combination.

As the (meth) acrylic copolymer having a crosslinkable functional group, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or a commercially available product may be used.

The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain or at the end of the polymer chain. Specific examples of the crosslinkable functional group include an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, a carboxyl group and the like. Among the crosslinkable functional groups, a carboxyl group is preferable. The carboxyl group can be introduced into the polymer chain by using acrylic acid.

As the polymer having a crosslinkable functional group, it is preferable to use a (meth) acrylic copolymer having a carboxyl group, for example, a (meth) acrylic acid ester copolymer having a carboxyl group and a (meth) acrylic having a carboxyl group. Copolymers can be mentioned. Among these, a (meth) acrylic acid ester copolymer having a carboxyl group is preferable.
Examples of the (meth) acrylic copolymer include those containing an acrylic acid ester as a main component, and examples thereof include butyl acrylate and / or a copolymer of ethyl acrylate and acrylonitrile.

(B1) The Tg of the thermoplastic resin is preferably −50 ° C. to 50 ° C., more preferably −40 ° C. to 20 ° C. When Tg is in such a range, it is possible to obtain more sufficient fluidity while suppressing the deterioration of handleability due to the excessive increase in the tack force of the second layer, and further, the second after curing. Since the elastic modulus of the layer can be made lower, it is possible to further prevent the peel strength from becoming too high.

(B1) The weight average molecular weight of the thermoplastic resin is not particularly limited, and is preferably 100,000 to 1.2 million, more preferably 300,000 to 1,000,000. When the weight average molecular weight of the thermoplastic resin is in such a range, it becomes easy to secure film forming property and fluidity.

The curable component (b2) is not particularly limited, and a thermosetting resin is preferable.

Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin, which may be used alone or in combination of two or more. Can also be used. As the thermosetting resin, an epoxy resin is particularly preferable from the viewpoint of obtaining a second layer having excellent heat resistance, workability and reliability.

The epoxy resin is not particularly limited as long as it is cured and has a heat resistant action. As the epoxy resin, a bifunctional epoxy resin such as bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin, and a cresol novolac type epoxy resin can be used. Further, as the epoxy resin, generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, and an alicyclic epoxy resin can be applied.

Bisphenol A type epoxy resins include Epicoat series manufactured by Japan Epoxy Resin Co., Ltd. (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009, "Epicoat". Is a registered trademark), DER-330, DER-301, DER-361 manufactured by Dow Chemical Co., Ltd., and YD8125, YDF8170 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., and DEN-438 manufactured by Dow Chemical Co., Ltd. Examples of the o-cresol novolac type epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., and YDCN701 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples thereof include YDCN702, YDCN703, and YDCN704. Examples of the polyfunctional epoxy resin include Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd., Araldite 0163 manufactured by Chivas Specialty Chemicals Co., Ltd., Denacol EX-611, EX-614, EX-614B, and EX-622 manufactured by Nagase ChemteX Corporation. , EX-512, EX-521, EX-421, EX-411, EX-321 and the like (“Araldite” and “Denacol” are registered trademarks). As the amine type epoxy resin, Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd., YH-434 manufactured by Toto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Company, and ELM- manufactured by Sumitomo Chemical Co., Ltd. 120 and the like can be mentioned. Examples of the heterocyclic epoxy resin include Araldite PT810 manufactured by Ciba Speciality Chemicals, ERL4234, ERL4299, ERL4221 and ERL4206 manufactured by UCC. One of these epoxy resins may be used alone, or two or more of these epoxy resins may be used in combination.

When an epoxy resin is used as the thermosetting resin, it is preferable to use an epoxy resin curing agent together.

As the epoxy resin curing agent, a known curing agent that is usually used can be used. Examples of the epoxy resin curing agent include bisphenols having two or more phenolic hydroxyl groups in one molecule, such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S. Examples thereof include phenolic resins such as phenol novolac resin, bisphenol A novolak resin, and cresol novolak resin. In particular, from the viewpoint of excellent electrolytic corrosion resistance during moisture absorption, the epoxy resin curing agent is preferably a phenolic resin such as a phenol novolac resin, a bisphenol A novolak resin, or a cresol novolak resin.

Among the above-mentioned phenolic resin curing agents, for example, those manufactured by DIC Corporation, trade names: Phenolite LF2882, Phenolite LF2282, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenol Light VH4170, manufactured by Meiwa Kasei Co., Ltd., product name: H-1, manufactured by Japan Epoxy Resin Co., Ltd., product name: Epicure MP402FPY, Epicure YL6065, manufactured by Epicure YLH129B65 and Mitsui Chemicals Co., Ltd., product name: Millex XL, Millex XLC, Examples include Millex RN, Millex RS, and Millex VR (“Phenolite”, “Epoxy”, and “Milex” are registered trademarks).

The blending amount of the (b2) curable component in the second layer is preferably 10 to 500 parts by mass, more preferably 50 to 300 parts by mass with respect to 100 parts by mass of the (b1) thermoplastic resin. When the blending amount of the curable component is within the above range, the temporary fixing resin film can have sufficient low-temperature stickability, heat resistance, curability and peelability. When the blending amount is 10 parts by mass or more, the adhesiveness to the support and the heat resistance are improved, the holding property at the time of backgrinding is also improved, and the wafer tends to be hard to crack. On the other hand, when the blending amount is 500 parts by mass or less, the viscosity before curing is unlikely to be excessively low, the curing can be performed in a relatively short time, and the retention of electronic components on the support and the peelability from the support are improved. It tends to be compatible.

In addition to the (b1) thermoplastic resin and (b2) curable component, the second layer contains a silicone compound (hereinafter, may be referred to as (b3) silicone compound) and a curing accelerator (hereinafter, may be referred to as a curing accelerator), if necessary. (B4) It may be referred to as a curing accelerator.) And other components may be contained.

As the (b3) silicone compound, those listed as the above-mentioned (a2) silicone compound can be used.

Since the second layer contains a silicone compound, it is easy to peel off the temporary fixing resin film from the semiconductor chip, the sealant and the support even at a low temperature of 100 ° C. or lower without using a solvent. It becomes possible to peel off.

The blending amount of the (b3) silicone compound in the second layer is preferably 0 to 100 parts by mass, more preferably 2 to 80 parts by mass with respect to 100 parts by mass of the (b1) thermoplastic resin. (B3) When the blending amount of the silicone compound is within the above range, it is possible to achieve both adhesiveness during processing of electronic components and peelability after processing.

As the (b4) curing accelerator, those listed as the above-mentioned (a3) curing accelerator can be used. In the second layer, when the (b1) thermoplastic resin contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that accelerates the curing of the epoxy group contained in the acrylic copolymer. Is preferable.

The blending amount of the (b4) curing accelerator in the second layer is preferably 0.01 to 2.0 parts by mass with respect to 100 parts by mass of the (b1) thermoplastic resin. When the blending amount of the (b4) curing accelerator is 0.01 part by mass or more with respect to 100 parts by mass of the (b1) thermoplastic resin, the second layer is sufficiently cured in the thermal history in the manufacturing process of the semiconductor device. Therefore, the electronic component and the support can be fixed more reliably. (B4) When the blending amount of the curing accelerator is 2.0 parts by mass or less with respect to 100 parts by mass of the (b1) thermoplastic resin, the melt viscosity of the temporary fixing resin film is unlikely to increase due to heating during the manufacturing process. Therefore, the storage stability of the film tends to be further improved.

Examples of other components include inorganic fillers, organic fillers, silane coupling agents and the like.

As the inorganic filler, those described above can be used. The blending amount of the inorganic filler in the second layer is 300 mass by mass with respect to 100 parts by mass of (b1) thermoplastic resin from the viewpoint of improving the handleability of the temporary fixing resin film in the B stage state and improving the low thermal expansion property. It is preferably parts or less, more preferably 200 parts by mass or less, and further preferably 100 parts by mass or less. The lower limit of the content of the inorganic filler is not particularly limited, and is preferably 5 parts by mass or more with respect to 100 parts by mass of the (b1) thermoplastic resin. By setting the content of the inorganic filler in the above range, it is possible to impart a desired function while sufficiently ensuring the adhesiveness of the second layer.

As the organic filler, those described above can be used. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and further preferably 100 parts by mass or less with respect to 100 parts by mass of the (b1) thermoplastic resin. The lower limit of the content of the organic filler is not particularly limited, and is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

The thickness of the second layer 22 is not particularly limited, and is preferably 10 to 350 μm from the viewpoint of sufficiently fixing the electronic component and the support for transportation. When the thickness is 10 μm or more, the variation in thickness at the time of coating is small, and since the thickness is sufficient, the strength of the film or the cured product of the film is good, and the electronic component and the support for transportation are improved. It can be more sufficiently fixed to the body. If the thickness is 350 μm or less, it is unlikely to be crushed when it is bonded to the first layer 21, so that the thickness of the temporary fixing resin film is unlikely to vary, and the amount of residual solvent in the film can be reduced by sufficient drying. It becomes easy to reduce, and foaming when the cured product of the film is heated can be further reduced.

In the present embodiment, the thickness ratio of the first layer 21 and the second layer 22 preferably satisfies the relationship of the formula (1), and more preferably satisfies the relationship of the formula (2).
(1/10) a ≦ b ≦ 10a ... (1)
(1/5) a ≦ b ≦ 6a ... (2)
In the formula, a indicates the thickness of the first layer 21, and b indicates the thickness of the second layer 22.

When the ratio of the thicknesses of the first layer 21 and the second layer 22 is within the above range, the surface irregularities of the surface of the electronic component such as the semiconductor element can be sufficiently embedded in the resin film for temporary fixing, and the electronic component can be sufficiently embedded. And the support for transportation tend to be sufficiently fixed.

The shear viscosity of the first layer 21 before curing is preferably 20000 Pa · s or less at 120 ° C., and more preferably 18000 Pa · s or less. If the shear viscosity at 120 ° C. is 20000 Pa · s or less, for example, it is sufficient when a pressure of 0.02 to 0.2 MPa is applied for 1 to 5 minutes under the conditions of 70 to 150 ° C. and 5 to 15 mbar. Since it is possible to obtain a high degree of fluidity, the embedding property of an electronic component having irregularities such as bumps is further excellent, and it becomes easier to crimp the electronic component without creating a gap. The shear viscosity at 120 ° C. may be 500 Pa · s or more.

The second layer 22 preferably has a shear viscosity before curing of 200 to 30,000 Pa · s at 120 ° C., preferably 400 to 27,000 Pa · s, from the viewpoint of handleability of the film or stickability to the support. Is more preferable. When the shear viscosity is 200 Pa · s or more, the handleability of the film is further improved, and when the shear viscosity is 30,000 Pa · s or less, sufficient stickability can be easily obtained.

The shear viscosity was measured using ARES (manufactured by Leometric Scientific Co., Ltd.) while giving a 5% strain to the temporary fixing resin film and raising the temperature at a heating rate of 20 ° C./min. Means a value.

The storage elastic modulus of the first layer 21 after curing is preferably 0.1 to 1000 MPa, more preferably 1 to 900 MPa at 25 ° C. If the storage elastic modulus at 25 ° C. is 0.1 MPa or more, adhesive residue is unlikely to occur in the electronic component during the peeling process, and if the elastic modulus at 25 ° C. is 1000 MPa or less, the electronic component having irregularities such as bumps during the peeling process It is difficult to break irregularities such as bumps. That is, in the present embodiment, the first layer can be a layer to be attached to the electronic component.

The storage elastic modulus of the second layer 22 after curing is preferably 100 MPa or more, more preferably 200 MPa or more at 25 ° C. When the storage elastic modulus at 25 ° C. is 100 MPa or more, the electronic component and the support tend to be sufficiently fixed when the electronic component is thinned. The storage elastic modulus after curing may be 6000 MPa or less at 25 ° C.

The relationship between the cured storage elastic modulus of the first layer 21 and the cured storage elastic modulus of the second layer 22 is second to that of the cured storage elastic modulus of the first layer 21. It is preferable that the storage elastic modulus of the layer 22 after curing is larger. If the storage elastic modulus after curing has such a relationship, it is possible to further reduce the possibility that adhesive residue is generated on the electronic component during the peeling process, and further prevent the destruction of irregularities such as bumps on the electronic component. It is possible to further firmly fix the electronic component and the support when the electronic component is thinned.

The storage elastic modulus means a measured value when measured while raising the temperature at a heating rate of 3 ° C./min using a dynamic viscoelasticity measuring device (manufactured by UBM Co., Ltd.).

The 30 ° peel strength of the first layer 21 with respect to electronic components such as silicon wafers is preferably 500 N / m or less at 25 ° C., and more preferably 450 N / m or less. When the 30 ° peel strength is 500 N / m or less, the first layer and the electronic component can be peeled without further adhesive residue, and the possibility that the electronic component is cracked at the time of peeling tends to be reduced. The 30 ° peel strength may be 10 N / m or more.

The 30 ° peel strength can be measured as follows. On the surface of a silicon mirror wafer (6 inches) having a thickness of 625 μm, grooves having a width of 40 μm and a depth of 40 μm are prepared at intervals of 100 μm by blade dicing. The silicon mirror wafer with a step produced in this manner is placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.) so that the step is on the upper surface, and is provisionally related to the present embodiment. The fixing resin film is installed so that the first layer is attached to the stepped silicon mirror wafer side. This is heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum-laminated to prepare a sample for measurement. The obtained measurement sample is cured and cut into a width of 10 mm. A peeling test is carried out at a speed of 300 mm / min by a peeling tester set so that the peeling angle is 30 °, and the peeling strength at that time is defined as 30 ° peeling strength.

The 90 ° peel strength of the second layer 22 with respect to the support, for example, a silicon mirror wafer is preferably 5 N / m to 200 N / m at 25 ° C., and more preferably 6 to 180 N / m. When the 90 ° peel strength is within the above range, the second layer and the support can be peeled without further adhesive residue. If the 90 ° peel strength is 5 N / m or more, the electronic component and the support can be more firmly fixed in the grinding process, and if it is 200 N / m or less, the temporary fixing resin film is peeled from the support. At that time, the film can be peeled off between the second layer and the support without adhesive residue, and the possibility of the film remaining on the support can be further reduced.

The 90 ° peel strength can be measured as follows. A 625 μm-thick silicon mirror wafer (6 inches) is placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.), and the temporary fixing resin film according to the present embodiment is placed on the second stage. Install so that the layer sticks to the silicon mirror wafer side. This is heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum-laminated to prepare a sample for measurement. The obtained measurement sample is cured and cut into a width of 10 mm. A peeling test is carried out at a speed of 300 mm / min by a peeling tester set so that the peeling angle is 90 °, and the peeling strength at that time is defined as 90 ° peeling strength.

[Manufacturing method of resin film for temporary fixing]
The temporary fixing resin film sheet 1 according to the present embodiment can be manufactured from, for example, the first resin sheet 2 shown in FIG. 2 and the second resin sheet 3 shown in FIG.

FIG. 2A is a top view showing an embodiment of the first resin sheet, and FIG. 2B is a schematic cross-sectional view taken along line II-II of FIG. 2A.

The first resin sheet 2 shown in FIG. 2 has a releasable support film 10, a first layer 21 provided on the support film 10, and a side opposite to the support film 10 of the first layer 21. The protective film 30 provided in the above is provided.

FIG. 3A is a top view showing an embodiment of the second resin sheet, and FIG. 3B is a schematic cross-sectional view taken along the line III-III of FIG. 3A.

The second resin sheet 3 shown in FIG. 3 has a releasable support film 10, a second layer 22 provided on the support film 10, and a side opposite to the support film 10 of the second layer 22. The protective film 30 provided in the above is provided.

For the temporary fixing resin film sheet 1, for example, the protective film 30 is peeled off from the first resin sheet 2 and the second resin sheet 3, and the first layer 21 surface and the second layer 22 surface are separated from each other from 60 to 60 to. It can be manufactured by laminating by roll laminating or the like at 120 ° C.

In each of the first layer 21 and the second layer 22 according to the present embodiment, the above-mentioned components are mixed and kneaded in an organic solvent to prepare a varnish, and the prepared varnish is applied onto the support film 10 and dried. It can be formed by the method of In this way, the resin sheets 2 and 3 having the first layer 21 or the second layer 22 on the support film 10 are manufactured, respectively.

The organic solvent is not particularly limited, and the volatility at the time of film formation can be determined in consideration of the boiling point. Specifically, from the viewpoint of making it difficult for the film to cure during film formation, methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene, etc. A solvent having a relatively low boiling point is preferable. Further, for the purpose of improving the film-forming property, for example, it is preferable to use a solvent having a relatively high boiling point of dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. One of these solvents may be used alone, or two or more of these solvents may be used in combination. The solid content concentration in the varnish is preferably 10 to 80% by mass.

The above mixing and kneading can be carried out by using a disperser such as a normal stirrer, a raker, a triple roll, or a ball mill, and combining these as appropriate. The above heat-drying is not particularly limited as long as the solvent used is sufficiently volatilized, and can be usually carried out by heating at 60 ° C. to 200 ° C. for 0.1 to 90 minutes.

The protective film 30 can be attached to the first layer 21 or the second layer 22 provided on the support film 10 if necessary. In this case, the first resin sheet 2 or the second resin sheet 3 having a three-layer structure including the support film 10, the first layer 21 or the second layer 22, and the protective film 30 described above is obtained. be able to.

The first resin sheet 2 or the second resin sheet 3 thus obtained can be easily stored, for example, by winding them into a roll. It is also possible to cut a roll-shaped film into a suitable size and store it in a sheet form. Further, the temporary fixing resin film sheet 1 of the present embodiment obtained by laminating these films can also be easily stored by winding it in a roll shape in the same manner.

The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. The support film 10 is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide or polyimide from the viewpoint of excellent flexibility and toughness. Further, from the viewpoint of improving the peelability from the resin film (resin layer), it is preferable to use a film that has been subjected to a mold release treatment with a silicone compound, a fluorine compound, or the like as the support film.

The thickness of the support film 10 may be appropriately changed depending on the desired flexibility, but is preferably 3 to 350 μm. When the thickness is 3 μm or more, the film strength is sufficient, and when the thickness is 350 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and further preferably 7 to 150 μm.

The protective film 30 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, and polypropylene. The protective film 30 is preferably polyethylene terephthalate, polyethylene or polypropylene from the viewpoint of flexibility and toughness. Further, from the viewpoint of improving the peelability from the temporary fixing resin film (resin layer), it is preferable to use a film that has been subjected to a mold release treatment with a silicone compound, a fluorine compound, or the like as the protective film 30.

The thickness of the protective film 30 can be appropriately set depending on the desired flexibility, and is preferably 10 to 350 μm, for example. When the thickness is 10 μm or more, the film strength becomes better, and when the thickness is 350 μm or less, further flexibility can be obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and further preferably 20 to 150 μm.

As another embodiment of the resin film sheet for temporary fixing, there is one shown in FIG. The temporary fixing resin film sheet 4 shown in FIG. 4 is temporarily fixed except that the temporary fixing resin film 20 and the support film 10 on the second layer 22 side are cut in advance according to the shape of the member to be temporarily fixed. It has the same structure as the fixing resin film sheet 1. In FIG. 4, the outer edges of the cut temporary fixing resin film 20 and the support film 10 are removed, but the temporary fixing resin film and the support film are notched according to the shape of the temporary fixing member. And the outer edge may be left behind.

Further, as another embodiment, a resin film set including the first resin sheet 2 and the second resin sheet 3 can be mentioned. According to the resin film set of the present embodiment, at the time of use (when processing an electronic component), the first layer and the second layer of these resin sheets can be bonded together and used as a temporary fixing resin film. it can.

By using the resin film for temporary fixing having the above-described structure, the electronic components can be processed well at a high temperature, and the electronic components and the support after processing can be easily peeled off even at room temperature. Therefore, it is possible to prevent adhesive residue on the electronic component and the support.

[Processing method for electronic components]
The method for processing an electronic component using a temporary fixing resin film according to the present embodiment is roughly divided into the following four steps. (A) A step of temporarily fixing the electronic component and the support via a resin film for temporary fixing, (b) a processing step of processing the electronic component temporarily fixed to the support, and (c) processed electrons. It includes a separation step of separating the component from the support and the resin film for temporary fixing, and (d) a cleaning step of cleaning the electronic component when there is a residue.

5 (A), 5 (B) and 5 (C) are schematic cross-sectional views for explaining an embodiment of a method for processing an electronic component, and FIG. 5 (D) is an electron after processing. It is a top view which shows the component.

<(A) Temporary fixing process>
In FIG. 5A, a film-like temporary fixing material 40 having a two-layer structure of a first layer 41 and a second layer 42 is interposed between the support 50 and the electronic component 60, and the support 50 is formed. The process of temporarily fixing the electronic component 60 is shown in 1. At this time, the film-shaped temporary fixing material 40 is arranged so that the first layer 41 is in contact with the electronic component 60 side and the second layer 42 is in contact with the support 50 side.

The thickness of the electronic component 60 is not particularly limited, but may be 600 to 800 μm.

(A-1) Formation of Temporary Fixing Material 40 on Support 50 By laminating the second layer 22 side of the temporary fixing resin film 20 on the support 50 using a roll laminator, a vacuum laminator, or the like. A film-shaped temporary fixing material 40 can be provided.

The material of the support of the present embodiment is not particularly limited, and a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used.

The support may be peeled off, and the peeling layer 52 is formed by peeling off all or part of the surface of the support 50 as shown in FIG. 5 (A). The release agent used for the release treatment is not particularly limited, and for example, a surface modifier having a fluorine element, a polyolefin wax and a silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin are excellent in peelability. Therefore, it is preferable.

(A-2) Attachment of Electronic Component 60 Next, a support 50 on which a film-shaped temporary fixing material 40 is formed is set on a wafer bonding device or a vacuum laminator, and the electronic component 60 is placed on the first layer 41 side. Press with a press to paste.

When using a wafer bonding device, for example, using an EVG vacuum press EVG520IS (trade name), the pressure is 1 hPa or less, the crimping pressure is 1 MPa, the crimping temperature is 60 ° C. to 200 ° C., and the holding time is 100 seconds to 300 seconds. The component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40.

When a vacuum laminator is used, for example, a vacuum laminator LM-50 × 50-S (trade name) manufactured by NPC Co., Ltd. and a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd. can be used. The pressing conditions are an atmospheric pressure of 1 hPa or less, a crimping temperature of 40 ° C. to 180 ° C., preferably 60 ° C. to 150 ° C., a laminating pressure of 0.01 to 0.5 MPa, preferably 0.1 to 0.5 MPa, and a holding time of 1 second to 600. The electronic component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40 in seconds, preferably 30 seconds to 300 seconds.

Examples of electronic components include semiconductor elements and the like. The material of the electronic component is not particularly limited, and a substrate such as a silicon wafer, a glass wafer, a quartz wafer, or a semiconductor wafer can be used.

(A-3) Curing of Resin Film for Temporary Fixing After the electronic component 60 and the support 50 are temporarily fixed via the film-shaped temporary fixing material 40, the film-shaped temporary fixing material 40 is cured. The curing method is not particularly limited as long as the film is cured, and there is a method by heat or irradiation. As a curing method, heat curing is particularly preferable. When curing by heat, the curing conditions are preferably 10 to 300 minutes at 100 to 200 ° C., and more preferably 20 to 210 minutes. When the temperature is 100 ° C. or higher, the film is sufficiently cured and problems are less likely to occur in the processing process, and when the temperature is 200 ° C. or lower, outgas is less likely to be generated during curing of the film, and peeling of the film can be further suppressed. Further, if the curing time is 10 minutes or more, problems are unlikely to occur in the processing process, and if it is 300 minutes or less, the work efficiency is unlikely to deteriorate. When the temporary fixing material 40 is cured, it becomes a temporary fixing material 70 including a cured first layer 71 and a cured second layer 72.

<(B) Processing process>
The processing process includes grinding, electrode formation, metal wiring formation, protective film formation and the like used at the wafer level. The grinding method is not particularly limited, and a known grinding method can be used. Grinding is preferably performed while cooling the electronic component and the grindstone (diamond, etc.) by pouring water on them.

For example, as shown in FIG. 5B, the back surface of the electronic component 80, that is, the surface of the electronic component 80 opposite to the side in contact with the film-shaped temporary fixing material 70 is ground by the grinder 90, for example, about 700 μm. The thickness is reduced to 100 μm or less.

Examples of the grinding device include DGP-8761 (trade name) manufactured by DISCO Co., Ltd., and the cutting conditions in this case can be arbitrarily selected according to the desired thickness of the electronic component and the grinding state.

Specifically, the other steps include metal sputtering for forming electrodes and the like, wet etching for etching the metal sputtering layer, application of a resist for masking the formation of metal wiring, pattern formation by exposure / development, and resist. Known processes include peeling, dry etching, metal plating formation, silicon etching for TSV formation, and oxide film formation on the silicon surface.

In FIG. 5C, the back surface side of the thinned electronic component 80 is processed by dry ion etching or Bosch process or the like to form through holes, and then copper plating or the like is performed to form the through electrode 82. An example is shown.

In this way, the electronic component 80 is subjected to a predetermined process. FIG. 5D is a top view of the processed electronic component 80. The processed electronic component 80 is further separated into semiconductor elements by dicing along the dicing line 84.

<(C) Separation step>
FIG. 6 is a schematic cross-sectional view for explaining an embodiment of a separation step of separating a processed electronic component from a support and a film-shaped temporary fixing material. The separation step according to the present embodiment includes a first peeling step of peeling the electronic component from the support and a second peeling step of peeling the film-shaped temporary fixing material from the support. The first peeling step is a step of peeling the electronic component processed in the processing step from the support, that is, a step of performing various processing on the thinned electronic component and then peeling it from the support before dicing. Is. As a peeling method, one of the electronic component or the support is fixed horizontally and the other is lifted at a certain angle from the horizontal direction, and a protective film is attached to the ground surface of the electronic component to remove the electronic component. Examples thereof include a method of peeling the protective film from the support by a peel method, which can be adopted without particular limitation.

All of these peeling methods are applicable to this embodiment. As a peeling method, as shown in FIG. 6A, one of the electronic component 80 or the support 50 is fixed horizontally, and the other is lifted at a constant angle from the horizontal direction. It is more suitable, which allows the electronic component 80 to be obtained (see FIG. 6C). In the present embodiment, the film-shaped temporary fixing material is formed by using the temporary fixing resin film according to the present embodiment, so that the processed electronic component in which the residue such as adhesive residue is sufficiently reduced can be easily produced. Obtainable. These peeling methods are usually carried out at room temperature, but may be carried out at a temperature of about 40 to 100 ° C. that does not damage electronic components. When mechanically disassembling, for example, a debonder (manufactured by SUSS Co., Ltd., DB12T), a De-Bonding device (manufactured by EVG, EVG805EZD), or the like is used.

In the second peeling step, for example, as shown in FIG. 6B, the electronic component 80 is fixed horizontally, and the end of the film-shaped temporary fixing material 70 is formed at a constant angle from the horizontal direction. By lifting, the electronic component 80 from which the temporary fixing material has been peeled off can be obtained, and the support can be recovered.

<(D) Cleaning process>
A part of the temporary fixing material tends to remain on the circuit forming surface of the electronic component. If a part of the temporary fixing material remains on the circuit forming surface of the peeled electronic component, a cleaning step for removing the temporary fixing material can be provided. The temporary fixing material can be removed, for example, by cleaning the electronic components.

The cleaning liquid is not particularly limited as long as it can remove a part of the remaining temporary fixing resin film. Examples of such a cleaning liquid include the above-mentioned organic solvent that can be used for diluting the resin film composition for temporary fixing. One of these organic solvents may be used alone, or two or more of them may be used in combination.

If it is difficult to remove the remaining temporary fixing resin film, bases and acids may be added to the organic solvent. As an example of the bases, amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine and ammonia; and ammonium salts such as tetramethylammonium hydroxide can be used. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The amount added is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid. In addition, an existing surfactant may be added to the cleaning liquid in order to improve the removability of the residue.

The cleaning method is not particularly limited, and examples thereof include a method of cleaning with a paddle using the above cleaning liquid, a cleaning method of spraying, and a method of immersing in a cleaning liquid tank. The temperature is preferably 10 to 80 ° C., preferably 15 to 65 ° C., and finally water washing or alcohol washing is performed and dried to obtain a thin electronic component 80.

As described above, according to the temporary fixing resin film composition according to the present embodiment, the residue such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

The processed electronic component 80 is formed with a through electrode 82 in the same manner as described above, and is further separated into a semiconductor element by dicing along the dicing line 84 (see FIG. 6D).

In the present embodiment, an electronic device can be manufactured by connecting the obtained semiconductor element to another semiconductor element or a substrate for mounting the semiconductor element.

FIG. 7 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing an electronic device. First, a through electrode 86 is formed by the method described above, and the semiconductor element 100 is prepared as an individual piece (FIG. 7 (A)). Then, the electronic device device 120 can be obtained by stacking a plurality of the semiconductor elements 100 on the wiring board 110 (FIG. 7 (B)).

Although the preferred embodiment of the temporary fixing resin film and the method for manufacturing a thin electronic component using the temporary fixing resin film according to the present invention has been described above, the present invention is not necessarily limited to the above-described embodiment. It is not a thing, and changes may be made as appropriate without departing from the purpose.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

[Synthesis of polyimide resin PI-1]
In a flask equipped with a stirrer, a thermometer, a nitrogen replacement device (nitrogen inflow pipe), and a reflux condenser with a water receptor, the amine BAPP (trade name, manufactured by Tokyo Kasei, 2,2-bis [4] -(4-Aminophenoxy) phenyl] propane, molecular weight: 410.51) 10.26 g (0.025 mol) and 1,4-butanediol bis (3-aminopropyl) ether (manufactured by Tokyo Kasei, trade name: B- 12. Molecular weight: 204.31) 5.10 g (0.025 mol) and 100 g of the solvent N-methyl-2-pyrrolidone (NMP) were charged, and the mixture was stirred to dissolve the diamine in the solvent. While cooling the flask in an ice bath, 26.11 g (0.05 mol) of decamethylenebistrimeric acid dianhydride (DBTA) was added little by little to the solution in the flask. After completion of the addition, the solution was heated to 180 ° C. while blowing nitrogen gas and kept warm for 5 hours to obtain a polyimide resin PI-1. The polyimide resin PI-1 was a thermoplastic resin, and had a weight average molecular weight of 50,000 and a Tg of 70 ° C. The polyimide resin PI-1 was prepared and used so that the solid content concentration in NMP was 50% by mass. The blending amount of PI-1 shown in Tables 1 and 2 is the mass part of the solid content.

[Synthesis of acrylic rubber K-1]
200 g of deionized water, 60 g of butyl acrylate, 10 g of methyl methacrylate in a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen substitution device (nitrogen inflow tube), and a reflux condenser with a water receptor. 10 g of 2-hydroxyethyl methacrylate, 20 g of glycidyl methacrylate, 1.94 g of a 1.8% aqueous polyvinyl alcohol solution, 0.2 g of lauryl peroxide, and 0.08 g of n-octyl mercaptan were blended. After removing the air in the system was blown for 60 minutes N ₂ gas into the flask, it was carried out for 5 hours polymerization by elevating the temperature of the system temperature to 65 ° C.. Further, the temperature inside the system was raised to 90 ° C. and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried in a vacuum dryer at 50 ° C. for 6 hours to obtain acrylic rubber K-1. When the acrylic rubber K-1 was measured by GPC, the weight average molecular weight of the acrylic rubber K-1 was 300,000 in terms of polystyrene. The Tg of the acrylic rubber K-1 was −20 ° C.

[Synthesis of acrylic rubber K-2]
200 g of deionized water, 70 g of butyl acrylate, 10 g of methyl methacrylate in a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen substitution device (nitrogen inflow tube), and a reflux condenser with a water receptor. 10 g of 2-hydroxyethyl methacrylate, 10 g of glycidyl methacrylate, 1.94 g of a 1.8% aqueous polyvinyl alcohol solution, 0.2 g of lauryl peroxide, and 0.06 g of n-octyl mercaptan were blended. After removing the air in the system was blown for 60 minutes N ₂ gas into the flask, it was carried out for 5 hours polymerization by elevating the temperature of the system temperature to 65 ° C.. Further, the temperature inside the system was raised to 90 ° C. and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and dried in a vacuum dryer at 50 ° C. for 6 hours to obtain acrylic rubber K-2. When the acrylic rubber K-2 was measured by GPC, the weight average molecular weight of the acrylic rubber K-2 was 400,000 in terms of polystyrene. The Tg of acrylic rubber K-2 was −28 ° C.

(Examples 1 to 11, Comparative Examples 1 to 2)
[Preparation of resin film for temporary fixing]
Varnishes for forming the first layer and the second layer were prepared with the composition of parts by mass shown in Tables 1 to 3. The prepared varnish was applied onto the release-treated surface of a release-treated polyethylene terephthalate film (manufactured by Teijin DuPont Film Co., Ltd., A31, thickness 38 μm), and dried by heating at 90 ° C. for 5 minutes and at 140 ° C. for 5 minutes. .. Then, the film was further laminated on the resin layer as a protective film to obtain a first resin sheet and a second resin sheet with the protective film and the support film, respectively. The protective film was peeled off from each resin sheet, and the first layer and the second layer were laminated by roll laminating at 60 ° C. to obtain each temporary fixing resin film.

Details of each component in Tables 1 to 3 are as follows.
Thermoplastic resin HTR-280-CHN: Acrylic rubber with a weight average molecular weight of 900,000 and Tg-28 ° C by GPC (manufactured by Nagase ChemteX Corporation)
HTR-280-Mw1: Acrylic rubber with a weight average molecular weight of 600,000 by GPC and Tg-28 ° C (manufactured by Nagase ChemteX Corporation)
HTR-860P-3CSP: Acrylic rubber with a weight average molecular weight of 800,000 and Tg of 12 ° C by GPC (manufactured by Nagase ChemteX Corporation)
HTR-860P-3CSP-30B: Acrylic rubber with a weight average molecular weight of 300,000 and Tg of 12 ° C by GPC (manufactured by Nagase ChemteX Corporation)
Acrylic rubber K-1: Acrylic rubber synthesized above (weight average molecular weight by GPC 300,000, Tg-20 ° C)
Acrylic rubber K-2: Acrylic rubber synthesized above (weight average molecular weight by GPC 400,000, Tg-28 ° C)
Polyimide resin PI-1: Polyimide resin synthesized above (weight average molecular weight by GPC 50,000, Tg 70 ° C)
-Curable component YDCN-700-10: Cresol novolac type polyfunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
YDF-8170C: Bisphenol F type bifunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
XLC-LL: Phenolic aralkyl resin (manufactured by Mitsui Chemicals, Inc.)
-Silicone compound KF105: Epoxy-modified silicone compound (manufactured by Shinetsu Silicone Co., Ltd.)
SH550: Methylphenyl silicone compound (manufactured by Toray Dow Chemical Co., Ltd.)
SH3773M: Polyether-modified silicone compound (manufactured by Toray Dow Chemical Co., Ltd.) TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Polymer Co., Ltd.)
BYK-UV3500: Polyether / acrylic modified silicone compound (manufactured by BYK)
-Curing accelerator 2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Chemicals Corporation)
-Filler SC2050-HLG: Silica filler (manufactured by Admatex Co., Ltd.)

Regarding the prepared resin films for temporary fixing of Examples and Comparative Examples, shear viscosity, step embedding property, heat resistance evaluation at 200 ° C., elastic modulus after curing, 30 ° peel strength of the first layer, second The 90 ° peel strength and peelability of the layer were evaluated according to the method shown below. The evaluation results are shown in Tables 4 and 5.

[Measurement of shear viscosity before curing]
The shear viscosities of the first layer and the second layer of the temporary fixing resin film before curing were evaluated by the following methods. A single-layer film for measurement in which either the first layer or the second layer is adjusted to a thickness of 120 μm is laminated at 80 ° C., and a rotary viscoelasticity measuring device (ARES, manufactured by TA Instruments Co., Ltd.) ) Was used to measure the shear viscosity. The measurement method is "parall plate", the measurement jig is a circular jig with a diameter of 8 mm, the measurement mode is "Dynamic temperature ram", the frequency is 1 Hz, and the single layer film for measurement is distorted by 5% at 35 ° C. The temperature was raised to 120 ° C. at a heating rate of 20 ° C./min, and the viscosity of the measuring film when the temperature reached 120 ° C. was measured.

[Step embedding property]
The step embedding property of the resin film for temporary fixing was evaluated by the following method. The second layer side of the temporary fixing resin film was laminated on the surface of a silicon mirror wafer (6 inches) having a thickness of 625 μm by roll laminating at 80 ° C. to obtain a wafer with the temporary fixing resin film. Next, on the surface of a silicon mirror wafer (6 inches) having a thickness of 625 μm, grooves having a width of 40 μm and a depth of 40 μm were prepared at intervals of 100 μm by blade dicing. The silicon mirror wafer with steps thus produced was placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.) so that the steps on the wafer were on the upper surface, and temporarily fixed as described above. The temporary fixing resin film side of the wafer with the temporary fixing resin film was placed face down, and the first layer of the temporary fixing resin film was installed so as to be attached to the stepped silicon mirror wafer side. This was heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum laminated.
Then, the state of the temporary fixing resin film was confirmed using an ultrasonic microscope (SAM, manufactured by Insight Co., Ltd., Insight-300). The evaluation criteria for embedding property are as follows.
A: The percentage of voids is less than 5%.
B: Void ratio is 5% or more.

[Evaluation of heat resistance at 200 ° C]
The heat resistance of the temporary fixing resin film at 200 ° C. was evaluated by the following method. A 625 μm-thick silicon mirror wafer (6 inches) was diced into 25 mm square pieces by blade dicing. Roll-laminated at 80 ° C. so that the second layer side of the temporary fixing resin film was attached to the surface of the fragmented silicon mirror wafer. Next, a slide glass having a thickness of 0.1 to 0.2 mm and a size of about 18 mm square is roll-laminated at 80 ° C. on the first layer side of the temporary fixing resin film, and the temporary fixing resin film is formed. A laminate sample sandwiched between a silicon wafer and a slide glass was prepared. The obtained sample was heated at 130 ° C. for 30 minutes, then heated at 170 ° C. for 1 hour to cure the resin film for temporary fixing, and then heated at 200 ° C. for 30 minutes. The sample thus obtained is observed from a slide glass surface, the image is analyzed with a soft wafer such as Photoshop (registered trademark), and the heat resistance at 200 ° C. is determined from the ratio of voids to the total area of the temporary fixing resin film. Gender was evaluated. The evaluation criteria are as follows.
A: The percentage of voids is less than 5%.
B: Void ratio is 5% or more.

[Storage modulus after curing]
The storage elastic modulus of the first layer and the second layer of the temporary fixing resin film after curing was evaluated by the following method. A single-layer film for measurement in which either the first layer or the second layer was adjusted to a thickness of 120 μm was laminated at 80 ° C. This was heated in an oven at 110 ° C. for 30 minutes and further at 170 ° C. for 1 hour to cure the film, and then cut into a width of 4 mm and a length of 33 mm in the thickness direction. The cut out single-layer film for measurement was set in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UMB Co., Ltd.), and a tensile load was applied to measure at a frequency of 10 Hz and a heating rate of 3 ° C./min. , The storage elastic modulus at 25 ° C. was measured.

[30 ° peel strength]
The 30 ° peel strength between the silicon wafer and the temporary fixing resin film (first layer) was evaluated by the following method. Grooves having a width of 40 μm and a depth of 40 μm were prepared at intervals of 100 μm on the surface of a silicon mirror wafer (6 inches) having a thickness of 625 μm by blade dicing. The silicon mirror wafer with a step produced in this manner is placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.) so that the step is on the upper surface, and the resin film for temporary fixing is placed on the stage. The first layer was placed so as to be attached to the stepped silicon mirror wafer side, heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum laminated. The obtained sample was heated at 130 ° C. for 30 minutes and then heated at 170 ° C. for 1 hour to cure. This was further heated at 200 ° C. for 30 minutes and then cut into a width of 10 mm to obtain a measuring film. The measuring film was subjected to a peeling test at a speed of 300 mm / min with a peeling tester set so that the peeling angle was 30 °, and the peeling strength at that time was defined as 30 ° peeling strength.

[90 ° peel strength]
The 90 ° peel strength between the silicon mirror wafer and the temporary fixing resin film (second layer) was evaluated by the following method. A 625 μm thick silicon mirror wafer (6 inches) is placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Co., Ltd.), and a resin film for temporary fixing is placed on the silicon mirror wafer as the second layer. The film was placed so as to stick to the side, heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum laminated. The obtained sample was heated at 130 ° C. for 30 minutes and then heated at 170 ° C. for 1 hour to cure. This was further heated at 200 ° C. for 30 minutes and then cut into a width of 10 mm to obtain a measuring film. The measuring film was subjected to a peeling test at a speed of 300 mm / min with a peeling tester set so that the peeling angle was 90 °, and the peeling strength at that time was defined as 90 ° peeling strength.

[Peelability]
The peelability of the temporary fixing resin film in the debonding device was evaluated by the following method. A support with a resin film for temporary fixing is formed by using a silicon mirror wafer as a support and attaching a resin film for temporary fixing by roll laminating at 80 ° C. so that the second layer side is attached to the silicon mirror wafer. Obtained. Next, on the surface of a silicon mirror wafer (8 inches) having a thickness of 725 μm, grooves having a width of 40 μm and a depth of 40 μm were formed at intervals of 100 μm by blade dicing, and a silicon wafer having a step on the surface was prepared. The first layer of the temporary fixing resin film of the support with the temporary fixing resin film is attached to the step side of the silicon wafer so as to be in contact with the step side, and a vacuum bonding device (VE07-14 manufactured by Ayumi Kogyo Co., Ltd.) is used. A laminate was obtained by heating and pressurizing for 2 minutes at a temperature of 120 ° C. and a pressure of 0.1 MPa under the condition of 5 mbar. The laminate thus obtained was heated at 130 ° C. for 30 minutes and then at 170 ° C. for 1 hour to cure the temporary fixing resin film. Then, after heating this at 200 ° C. for 30 minutes, tweezers with a sharp tip are inserted between the step side of the silicon wafer and the first layer side of the resin film for temporary fixing, and the tweezers are moved along the outer edge. Tweezers. The silicon wafer and support that could be peeled off without cracking were designated as A, and those that could not be peeled off or those that were damaged were designated as B.

As shown in Tables 4 and 5, the temporary fixing resin film of the example was excellent in step embedding property and heat resistance of the silicon wafer. Further, the 30 ° peel strength between the silicon wafer and the first layer side of the temporary fixing resin film is low, and the 90 ° peel strength between the silicon mirror wafer and the second layer side of the temporary fixing resin film is low. It was confirmed that the peelability was good.

According to the present invention, it is possible to provide a temporary fixing resin film that can satisfactorily process an electronic component and can be easily peeled off from the processed electronic component and a support.

1, 4 ... Temporary fixing resin film sheet, 2 ... First resin sheet, 3 ... Second resin sheet, 10 ... Support film, 20 ... Temporary fixing resin film, 21 ... First layer, 22 ... First Two layers, 30 ... protective film, 40 ... temporary fixing material, 41 ... first layer, 42 ... second layer, 50 ... support, 52 ... peeling layer, 60 ... electronic parts, 70 ... temporary fixing material, 71 ... 1st layer, 72 ... 2nd layer, 80 ... Electronic components, 82 ... Through electrode, 84 ... Dying line, 86 ... Through electrode, 90 ... Grinder, 100 ... Semiconductor element, 110 ... Wiring board, 120 ... Electronic equipment.

Claims (13)

(A) A step of temporarily fixing the electronic component and the support via a resin film for temporary fixing, (b) a processing step of processing the electronic component temporarily fixed to the support, and (c) processing. A separation step of separating the electronic component from the support and the temporary fixing resin film is provided.
The temporary fixing resin film in the step (a) has a first layer containing a first thermoplastic resin having a glass transition temperature of −50 ° C. to 50 ° C. and a glass transition temperature of −50 ° C. to 50 ° C. A second layer containing a second thermoplastic and a curable component at ° C.
The temporary fixing resin film in the step (a) is
The storage elastic modulus (E ₁ ) of the first layer after curing by heating at 110 ° C. for 30 minutes and further at 170 ° C. for 1 hour is 0.1 to 1000 MPa at 25 ° C.
The storage elastic modulus (E ₂ ) of the second layer after being cured by heating at 110 ° C. for 30 minutes and further at 170 ° C. for 1 hour is 100 Mpa or more at 25 ° C.
E ₂ is larger than E ₁
A method for processing an electronic component, wherein the separation step includes a step of mechanically peeling the temporary fixing resin film from the processed electronic component or the support. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to claim 1, wherein the shear viscosity of the first layer is 20000 Pa · s or less at 120 ° C., and the shear viscosity of the second layer is 200 to 30,000 Pa · s at 120 ° C. .. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to claim 1 or 2, wherein the content of the curable component in the second layer is 10 to 500 parts by mass with respect to 100 parts by mass of the second thermoplastic resin. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 3, wherein the thickness of the first layer is 10 to 350 μm, and the thickness of the second layer is 10 to 350 μm. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 4, wherein the thickness of the first layer and the thickness of the second layer satisfy the relationship of the following formula (1).
(1/10) a ≦ b ≦ 10a ... (1)
[In the formula (1), a represents the thickness of the first layer, and b represents the thickness of the second layer. ] The temporary fixing resin film in the step (a) is
The electronic component according to any one of claims 1 to 5, wherein the first thermoplastic resin is a thermoplastic resin having a crosslinkable functional group and having a weight average molecular weight of 100,000 to 1.2 million. Processing method. The temporary fixing resin film in the step (a) is
The electronic component according to any one of claims 1 to 6, wherein the second thermoplastic resin is a thermoplastic resin having a crosslinkable functional group and having a weight average molecular weight of 100,000 to 1.2 million. Processing method. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 7, wherein the curable component is a thermosetting resin. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 8, wherein the first layer further contains a silicone compound. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 9, wherein the second layer further contains a silicone compound. The temporary fixing resin film in the step (a) is
The first layer contains 2 to 100 parts by mass with respect to 100 parts by mass of the first thermoplastic resin, and the second layer contains the silicone compound in an amount of the first. 2. The method for processing an electronic component according to any one of claims 1 to 10, wherein the amount is 2 to 100 parts by mass with respect to 100 parts by mass of the thermoplastic resin. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 11, wherein the first layer further contains a curing accelerator. The temporary fixing resin film in the step (a) is
The method for processing an electronic component according to any one of claims 1 to 12, wherein the second layer further contains a curing accelerator.

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