JP2020035871A - Multi-beam aperture set, and apparatus and method for multi-charged particle beam drawing - Google Patents

Abstract

To improve the manufacturing yield of a blanking aperture array while actualizing a large-scale beam array.SOLUTION: A multi-beam aperture set includes a molding aperture array, having a plurality of first openings, in which a region including the plurality of first openings is irradiated with a charged-particle beam to form a multi-beam by the passage of a part of the charged-particle beam through the plurality of first openings. The multi-beam aperture set further includes a blanking aperture array which includes: a first blanking plate on which a plurality of second openings, through which corresponding beams among the multi-beam pass, are formed and a pair of blanking electrodes to perform beam blanking deflection is formed on each second opening; and a second blanking plate on which a plurality of third openings, through which corresponding beams among the multi-beam pass, are formed and a pair of blanking electrodes to perform beam blanking deflection is formed on each third opening.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a multi-beam aperture set, a multi-charged particle beam writing apparatus, and a multi-charged particle beam writing method.

  With the increase in the degree of integration of LSIs, the circuit line width required for semiconductor devices has been miniaturized year by year. In order to form a desired circuit pattern on a semiconductor device, a high-precision original pattern formed on quartz using a reduction projection type exposure apparatus (a mask, or a reticle is used especially for a stepper or scanner). ) Is reduced and transferred onto a wafer. A high-accuracy original pattern is drawn by an electron beam drawing apparatus, and a so-called electron beam lithography technique is used.

  A drawing apparatus using a multi-beam performs exposure for each pixel with a plurality of beams, and expresses a pattern as a set of pixels. All beams can be used even for complicated and fine patterns, but on the other hand, in a variable-shape drawing system, it is necessary to form a beam with a small beam size in accordance with the size and shape of the figure. Becomes smaller. For this reason, the throughput in the case of drawing a complicated pattern can be greatly improved in the multi-beam drawing apparatus. In a multi-beam writing apparatus using a blanking aperture array, which is one form of the multi-beam writing apparatus, for example, an electron beam emitted from one electron gun is passed through a shaped aperture array having a plurality of apertures to form a multi-beam ( (A plurality of electron beams). The multiple beams pass through respective blankers of the blanking aperture array. The blanking aperture array has a pair of electrodes for individually deflecting beams, and an opening for beam passage between them. One of the pair of electrodes (blanker) is fixed at ground potential and the other is connected to ground potential and the other. , The blanking deflection of the passing electron beam is performed individually. The electron beam deflected by the blanker is blocked, and the undeflected electron beam is irradiated on the sample.

  The blanking aperture array is a large-sized LSI chip having an array region in which a large number of openings are provided at predetermined intervals, and a peripheral circuit region provided around the array region. Therefore, the manufacturing yield is low and the cost is high. Further, since the blanking aperture array is manufactured by an LSI process, there is an upper limit on the chip size that can be processed by the scanner, and it is difficult to enlarge the beam array.

JP 2013-69813 A JP-A-2006-86103 JP 2001-15428 A JP 2012-243917 A Japanese Patent No. 4423490

  An object of the present invention is to provide a multi-beam aperture set, a multi-charged particle beam writing apparatus, and a multi-charged particle beam writing method that can improve the manufacturing yield of a blanking aperture array and realize a large-scale beam array. As an issue.

  An aperture set for a multi-beam according to one aspect of the present invention is configured such that a plurality of first openings are formed, and a region including the plurality of first openings is irradiated with a charged particle beam emitted from an emission unit. Forming a multi-beam by forming a plurality of beams by passing a part of the charged particle beam through each of the first openings; and forming a plurality of second openings through which corresponding beams among the multi-beams are formed, A first blanking plate provided with a pair of blanking electrodes for blanking and deflecting a beam in each second opening, and a plurality of third openings through which corresponding beams of the multi-beams are formed. Having a second blanking plate provided with a pair of blanking electrodes for blanking and deflecting a beam in each third opening. A ring aperture array, in which comprises a.

  In the multi-beam aperture set according to one aspect of the present invention, the first blanking plate and the second blanking plate are mounted on the same mounting board.

  In the aperture set for a multi-beam according to one aspect of the present invention, the first blanking plate is mounted on a first mounting board, and the second blanking plate is mounted on a second mounting board.

  In the aperture set for a multi-beam according to one aspect of the present invention, the shaping aperture array includes a first shaping aperture array corresponding to the first blanking plate and a second shaping aperture array corresponding to the second blanking plate. It is composed of another chip.

  A multi-charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit that emits a charged particle beam, a plurality of first openings, and a region including the entirety of the plurality of first openings. A shaped aperture array that receives irradiation and forms a multi-beam by a part of the charged particle beam passing through each of the plurality of first openings, and a plurality of first openings are formed, and the plurality of first openings are formed. A shaped aperture array configured to receive a charged particle beam emitted from an emission unit in a region included therein, and form a multi-beam by passing a part of the charged particle beam through each of the plurality of first openings; A plurality of second apertures through which the corresponding beams of the multi-beams are formed, and a pair of blanks for blanking and deflecting the beams in each of the second apertures. A first blanking plate provided with a first electrode and a plurality of third openings through which the corresponding beams of the multi-beams are respectively formed, and a pair of blanking deflections of the beams in each of the third openings. A blanking aperture array having a second blanking plate provided with a blanking electrode, and a beam passing through the plurality of second openings and a beam passing through the plurality of third openings are collectively deflected to form a drawing target. A deflector for adjusting a beam irradiation position on the substrate.

  According to one aspect of the present invention, there is provided a multi-charged particle beam writing method, comprising the steps of: emitting a charged particle beam; irradiating the shaped aperture array having a plurality of first openings with the charged particle beam; Forming a multi-beam by allowing a part of the charged particle beam to pass therethrough; and forming a plurality of second openings through which the corresponding beams of the multi-beams are respectively formed. A first blanking plate provided with a pair of blanking electrodes for performing blanking deflection, and a plurality of third openings through which corresponding beams among the multi-beams are formed. Blanking aperture array having a second blanking plate provided with a pair of blanking electrodes for blanking deflection of a beam Performing on / off control of each beam using a deflector, and deflecting the beam passing through the plurality of second openings and the beam passing through the plurality of third openings collectively using a deflector, Irradiating the entire area of the drawing area of the substrate to be written with the beam passing through the plurality of second openings, and irradiating the beam through the plurality of third openings. Is used to irradiate the entire drawing area to perform multiple drawing.

  According to the present invention, the manufacturing yield of the blanking aperture array is improved, and a large-scale beam array can be realized.

1 is a schematic diagram of a drawing apparatus according to an embodiment of the present invention. It is a top view of a shaping aperture array. (A) is a sectional view taken along the line IIIa-IIIa of (b), and (b) is a perspective view of a blanking plate mounted on a mounting board. (A) is a diagram for explaining a drawing region, and (b) is a diagram showing a state of drawing a stripe region. 4 is a flowchart illustrating a drawing method according to the embodiment. It is a figure showing the example of a beam array. It is a figure showing an example of irradiation dose distribution. (A) is a sectional view taken along line VIIIa-VIIIa of (b), and (b) is a perspective view of a blanking plate mounted on a mounting board. FIG. 9 is a schematic view of an aperture set according to another embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, but may be an ion beam or the like.

  FIG. 1 is a schematic configuration diagram of a drawing apparatus according to the embodiment. The drawing apparatus 100 shown in FIG. 1 is an example of a multi-charged particle beam drawing apparatus. The drawing apparatus 100 includes an electronic lens barrel 102 and a drawing chamber 103. An electron gun 111, an illumination lens 112, an aperture set S, a reduction lens 115, a limiting aperture member 116, an objective lens 117, and a deflector 118 are arranged in the electron lens barrel 102.

  The aperture set S has a formed aperture array 10, blanking plates 20, 30, and a mounting substrate 40. The two blanking plates 20 and 30 constituting the blanking aperture array are mounted (mounted) on the mounting substrate 40 via the chip mounter 50. The circuits of the blanking plates 20 and 30 and the circuit of the mounting board 40 are connected by wire bonding or the like.

  An opening 42 (fourth opening) through which an electron beam (multi-beam 130M) passes is formed in the center of the mounting substrate 40. When shaping the multi-beam 130M, the shaping aperture array 10 generates heat to block most of the electron beam 130 and thermally expands. Therefore, the forming aperture array 10 is installed on a movable stage, and the position is adjusted so that the multi-beam 130M passes through the through holes of the blanking plates 20 and 30.

  The aperture set S may include other apertures. For example, a contrast aperture that blocks scattered electrons generated in the shaping aperture array 10 may be provided below or above the blanking plates 20 and 30.

  An XY stage 105 is arranged in the drawing room 103. On the XY stage 105, a sample 101 such as a mask, which is a substrate to be written at the time of writing, is arranged. The sample 101 includes an exposure mask for manufacturing a semiconductor device, a semiconductor substrate (silicon wafer) on which the semiconductor device is manufactured, and the like. Further, the sample 101 includes a mask blank on which a resist is applied and on which nothing is drawn yet.

  As shown in FIG. 2, the formed aperture array 10 is provided with a first array region 10A and a second array region 10B in which openings (first openings) 12 are formed at a predetermined arrangement pitch. For example, openings 12 of m columns × n columns (m, n ≧ 2) are formed in each of the first array region 10A and the second array region 10B. Each opening 12 is formed as a rectangle or a circle having the same size and shape. When a part of the electron beam 130 passes through each of the plurality of openings 12, a multi-beam 130M is formed.

  The first array region 10A corresponds to the blanking plate 20, and a plurality of beams formed through the openings 12 of the first array region 10A travel toward the blanking plate 20. The second array region 10B corresponds to the blanking plate 30, and the plurality of beams formed through the openings 12 of the second array region 10B travel toward the blanking plate 30.

  The interval L between the first array region 10A and the second array region 10B is larger than the arrangement pitch of the openings 12.

  The blanking plates 20 and 30 are provided below the forming aperture array 10 (downstream in the beam traveling direction). An opening (second opening) 22 is formed in the blanking plate 20 in accordance with the arrangement position of the opening 12 in the first array region 10A of the formed aperture array 10. An opening (third opening) 32 is formed in the blanking plate 30 in accordance with the arrangement position of the opening 12 in the second array region 10B of the formed aperture array 10.

  In the vicinity of each of the openings 22, 32, a blanker (not shown) composed of a pair of two electrodes forming a pair is arranged. One electrode of the blanker is fixed at the ground potential, and the other electrode is switched between the ground potential and another potential.

  The electron beams passing through the openings 22 and 32 are independently deflected by the voltage applied to the blanker. In this way, the plurality of blankers perform blanking deflection of the corresponding beams among the multi-beams 130M that have passed through the plurality of openings 12 of the shaping aperture array 10.

  As shown in FIGS. 3A and 3B, the two blanking plates 20 and 30 are mounted on a mounting substrate 40 via a chip mounter 50. The chip mounter 50 is a plate made of, for example, silicon. The chip mounter 50 is provided with an opening 52 (fifth opening) in accordance with the arrangement position of the openings 22 and 32 of the blanking plates 20 and 30. The diameter of the opening 52 is substantially the same as or slightly larger than the diameters of the openings 22 and 32. Instead of the opening 52, a configuration in which the beam array portion is opened collectively may be adopted.

  Since the blanking plates 20 and 30 are thin substrates having a thickness of 100 μm or less, the strength can be improved by mounting them on the chip mounter 50 having a thickness of about 300 to 1000 μm.

  In the writing apparatus 100 in which such an aperture set S is installed, the electron beam 130 emitted from the electron gun 111 (emission unit) illuminates the entire formed aperture array 10 almost vertically by the illumination lens 112. When the electron beam 130 passes through the plurality of openings 12 of the shaping aperture array 10, a plurality of electron beams (multi-beams) 130M are formed. The multi-beam 130M passes through the corresponding openings 22, 32 of the blanking plates 20, 30, and then passes through the opening 52 of the chip mounter 50 and the opening 42 of the mounting board 40.

  Therefore, the blanking plates 20 and 30 need to be mounted with their opening positions precisely adjusted so that the beams emitted from the molded aperture array 10 can pass through the corresponding openings on the blanking plates 20 and 30. The openings in the blanking plates 20 and 30 are larger than the openings in the molded aperture array 10 or the dimensions of the beams on the blanking plates 20 and 30, but with a higher precision than the difference between the two. It is necessary to adjust the relative position and install. Alternatively, as will be described later, by independently setting the forming apertures corresponding to the blanking plates 20 and 30, even if the relative positions of the holes of the blanking plates 20 and 30 are shifted, the position of the forming aperture is adjusted and the beam is adjusted. May pass through the holes of the blanking plates 20 and 30.

  The multi-beam 130M that has passed through the mounting substrate 40 is reduced by the reduction lens 115, and proceeds toward the center hole of the limiting aperture member 116. Here, the electron beam deflected by the blankers of the blanking plates 20 and 30 is displaced from the center hole of the limiting aperture member 116 and is blocked by the limiting aperture member 116. On the other hand, the electron beam not deflected by the blanker passes through the center hole of the restricting aperture member 116. Blanking control is performed by ON / OFF of the blanker, and ON / OFF of the beam is controlled.

  Thus, the limiting aperture member 116 blocks each beam deflected by a plurality of blankers so as to be in a beam-off state. Then, a beam of one shot is formed by the beam that has been formed from when the beam is turned on to when the beam is turned off and that has passed through the limiting aperture member 116.

  The multi-beam that has passed through the limiting aperture member 116 is focused by the objective lens 117, and becomes a pattern image with a desired reduction ratio. The entire multi-beam is collectively deflected by the deflector 118 in the same direction, and is irradiated to each irradiation position on the sample 101 of each beam. When the XY stage 105 is continuously moving, the beam irradiation position is controlled by the deflector 118 so as to follow the movement of the XY stage 105.

  The multiple beams irradiated at one time are ideally arranged at a pitch obtained by multiplying the arrangement pitch of the plurality of openings 12 of the shaping aperture array 10 by the above-described desired reduction ratio. The drawing apparatus 100 performs a drawing operation by a raster scan method in which shot beams are continuously and sequentially irradiated, and when drawing a desired pattern, unnecessary beams are controlled to be turned off by blanking control.

  As shown in FIG. 4A, the drawing area 60 of the sample 101 is virtually divided into a plurality of strip-shaped stripe areas 62 having a predetermined width in the y direction, for example. For example, the XY stage 105 is moved to start drawing from the left end of the first stripe region 62. As shown in FIG. 4B, by moving the XY stage 105 in the −x direction, drawing can be relatively advanced in the x direction.

  For example, the stripe region 62 is divided into a plurality of mesh-shaped minute regions with a multi-beam size. Each minute area is a drawing target pixel (drawing position). A plurality of pixels are irradiated by one multi-beam irradiation. The pitch between the irradiation pixels is the pitch between the beams of the multi-beam.

  The deflector 118 collectively controls the irradiation positions of the beam array BA1 that is turned on and off by the blanker of the blanking plate 20 and the beam array BA2 that is turned on and off by the blanker of the blanking plate 30. The deflector 118 controls the beam arrays BA1 and BA2 to expose all the pixels (entire area) of the stripe region 62, and to realize two-pass (multiplicity = 2) multiple writing. That is, each pixel is exposed once to one of the beams of the beam array BA1 and one of the beams of the beam array BA2.

  Next, the processing of the control device 200 for controlling the drawing apparatus 100 will be described with reference to the flowchart shown in FIG.

  The control device 200 reads out the drawing data stored in the storage device 210 (Step S1). The drawing data defines, for example, an arrangement position of each figure pattern, a figure type, a figure size, and the like.

  The control device 200 divides the drawing area into small meshes of about 10 nm square, and assigns a figure pattern defined in the drawing data to the mesh area (Step S2). The dimensions of this mesh are set to be substantially the same as the dimensions of the multi-beam 130M on the sample surface. The control device 200 calculates the area density of the figure pattern arranged for each mesh area, calculates the irradiation amount for each mesh area (beam irradiation position) based on the area density, and defines the irradiation amount for each mesh area. Irradiation dose data is generated (step S3).

  The control device 200 divides the drawing area into large meshes of several μm square, and assigns a figure pattern defined in the drawing data to the mesh area (Step S4). The control device 200 performs the proximity effect correction calculation, calculates the dose for each mesh position for suppressing the proximity effect, and generates dose data defining the dose for each mesh position (step S5).

  The control device 200 combines the dose data calculated in step S3 with the dose data calculated in step S5 (step S6).

  The control device 200 evenly allocates the dose to each pass of the multiple drawing for each mesh position (pixel corresponding to the beam irradiation position), and generates dose data corresponding to each pass (step S7). For example, in this embodiment, since two blanking plates 20 and 30 are used and the multiplicity is 2, the irradiation amount of each pixel is divided by 2, and the first irradiation amount data for the blanking plate 20 and , And the second dose data for the blanking plate 30.

  In the drawing apparatus 100, beam displacement may occur in the beam arrays BA1 and BA2 due to the processing accuracy and mounting accuracy of the blanking plates 20, 30 and lens distortion. FIG. 6 is a schematic diagram when the beam array BA2 is displaced.

  If there is such a displacement, the dose distribution given to the resist by the beam is different from the design, and the uniformity of the pattern dimension is deteriorated. In order to correct the influence of the beam position deviation on the dose distribution, a reflection mark (not shown) provided in advance on the XY stage 105 is scanned with a multi-beam, and reflected electrons are detected to determine the beam position of each beam. The beam position deviation maps of the beam arrays BA1 and BA2 are calculated and created. Then, as shown in FIG. 7, the irradiation amount is distributed to the adjacent beams in accordance with the beam position shift, and the influence of the beam position shift is corrected by adjusting the irradiation amount for each beam, that is, the irradiation time for each beam. I do. In the example shown in FIG. 7, the irradiation amount is distributed to three adjacent beams. The irradiation dose of each pixel (each beam) is corrected by summing the irradiation doses.

  The control device 200 corrects the dose of the first dose data so as to correct the beam position shift of the beam array BA1 using the position shift map of the beam array BA1 (step S8). Further, the control device 200 corrects the dose of the second dose data so as to correct the beam position shift of the beam array BA2 using the position shift map of the beam array BA2 (step S9).

  The control device 200 generates shot data for each shot for the blanking plate 20 using the corrected first dose data (step S10). Further, the control device 200 generates shot data for each shot for the blanking plate 30 using the corrected second dose data (step S11).

  The control device 200 controls the drawing device 100 using the shot data to execute a drawing process (step S12). The control device 200 generates deflection amount data for deflecting the multi-beam, outputs the data to the deflector 118, and irradiates the beam to a desired position while following the movement of the XY stage 105. Further, the control device 200 controls the blanker on / off of the blanking plates 20 and 30 to control the irradiation time of each pixel.

  As described above, according to the present embodiment, multi-beam writing can be performed while performing on / off control of the beam using the two blanking plates 20 and 30.

  In the above embodiment, an example in which two blanking plates 20 and 30 are used has been described, but three or more blanking plates may be used. By using N blanking plates, multiple writing with a multiplicity of N is performed.

  By configuring the blanking aperture array with a plurality of blanking plates, the size per blanking plate can be reduced as compared with the case where the blanking aperture array is configured with one chip, and the manufacturing yield can be reduced. Can be improved. Further, by using a plurality of blanking plates, it is easy to realize a large-scale beam array.

  In the above embodiment, the example in which the blanking plates 20 and 30 are mounted on the mounting substrate 40 via the chip mounter 50 has been described, but the chip mounter 50 may be omitted.

  A plurality of mounting boards on which one blanking plate is mounted may be provided. For example, as shown in FIGS. 8A and 8B, the blanking plate 20 is mounted on the mounting board 40A, and the blanking plate 30 is mounted on the mounting board 40B. For example, the mounting substrates 40A and 40B are U-shaped substrates provided with notches (recesses) 42A and 42B serving as beam passage holes. It is preferable to mount the mounting boards 40A and 40B on independent alignment adjustment stages.

  The formed aperture array may be composed of a plurality of chips corresponding to a plurality of blanking plates. For example, as shown in FIG. 9, a forming aperture array 10A corresponding to the blanking plate 20 and a forming aperture array 10B corresponding to the blanking plate 30 are provided. A pre-aperture plate 8 having openings 82 and 84 is provided on the formed aperture arrays 10A and 10B. The beam passing through the opening 82 illuminates the shaping aperture array 10A, and the beam passing through the opening 84 illuminates the shaping aperture array 10B.

  The plurality of beams formed through the openings 12A of the shaping aperture array 10A travel toward the blanking plate 20. The plurality of beams formed through the openings 12B of the shaping aperture array 10B travel toward the blanking plate 30. The formed aperture arrays 10A and 10B may be mounted on a common holder or may be mounted on independent alignment adjustment stages. Since the size of one formed aperture array can be reduced, the production yield can be improved.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying constituent elements in an implementation stage without departing from the scope of the invention. Various inventions can be formed by appropriately combining a plurality of components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Further, components of different embodiments may be appropriately combined.

Reference Signs List 10 shaped aperture array 20, 30 blanking plate 40 mounting substrate 50 chip mounter 100 drawing device 102 electron lens barrel 103 drawing room 111 electron gun 112 illumination lens 115 reduction lens 116 limiting aperture member 117 objective lens 118 deflector

Claims (6)

A plurality of first openings are formed, and a region including the plurality of first openings is irradiated with a charged particle beam emitted from an emission unit, and a part of the charged particle beam passes through the plurality of first openings. A shaped aperture array that forms a multi-beam by passing through each;
A first blanking plate in which a plurality of second openings through which the corresponding beams of the multi-beams are respectively formed, and a pair of blanking electrodes for blanking and deflecting the beams in each second opening are provided; And a second blanking plate in which a plurality of third openings through which the corresponding beams of the multi-beams are formed are formed, and a pair of blanking electrodes for blanking and deflecting the beams are provided in each of the third openings. A blanking aperture array having
A multi-beam aperture set with   2. The multi-beam aperture set according to claim 1, wherein the first blanking plate and the second blanking plate are mounted on a same mounting board. 3.   2. The multi-beam aperture set according to claim 1, wherein the first blanking plate is mounted on a first mounting board, and the second blanking plate is mounted on a second mounting board. 3.   The said forming aperture array WHEREIN: The 1st shaping aperture array corresponding to the said 1st blanking plate, and the 2nd shaping aperture array corresponding to the said 2nd blanking plate are comprised with another chip | tip. Item 4. The multi-beam aperture set according to any one of Items 1 to 3. An emission unit for emitting a charged particle beam;
A plurality of first openings are formed, a region including the entire plurality of first openings is irradiated with the charged particle beam, and a part of the charged particle beam passes through the plurality of first openings, respectively. A shaped aperture array for forming a multi-beam;
A plurality of first openings are formed, and a region including the plurality of first openings is irradiated with a charged particle beam emitted from an emission unit, and a part of the charged particle beam passes through the plurality of first openings. A shaped aperture array that forms a multi-beam by passing through each;
A first blanking plate in which a plurality of second openings through which the corresponding beams of the multi-beams are respectively formed, and a pair of blanking electrodes for blanking and deflecting the beams in each second opening are provided; And a second blanking plate in which a plurality of third openings through which the corresponding beams of the multi-beams are formed are formed, and a pair of blanking electrodes for blanking and deflecting the beams are provided in each of the third openings. A blanking aperture array having
A deflector that deflects a beam that has passed through the plurality of second openings and a beam that has passed through the plurality of third openings, and adjusts a beam irradiation position on a substrate to be written;
A multi-charged particle beam drawing apparatus comprising: Emitting a charged particle beam;
Irradiating the charged particle beam to a shaped aperture array in which a plurality of first openings are formed, and forming a multi-beam by passing a part of the charged particle beam through each of the plurality of first openings;
A first blanking plate in which a plurality of second openings through which the corresponding beams of the multi-beams are respectively formed, and a pair of blanking electrodes for blanking and deflecting the beams in each second opening are provided; And a second blanking plate in which a plurality of third openings through which the corresponding beams of the multi-beams are formed are formed, and a pair of blanking electrodes for blanking and deflecting the beams are provided in each of the third openings. Using a blanking aperture array having a step of performing on / off control of each beam,
Using a deflector, simultaneously deflecting the beam passing through the plurality of second openings and the beam passing through the plurality of third openings, and irradiating the beam onto the substrate to be written;
With
Using the beam that has passed through the plurality of second openings, the entire area of the drawing area of the substrate to be written is irradiated, and the beam that has passed through the plurality of third openings is used to irradiate the entire area of the drawing area. A multi-charged particle beam drawing method.

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