JP2018009138A - Resin composition for temporarily fixing, resin film for temporarily fixing and resin film sheet for temporarily fixing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition for temporarily fixing that makes it possible to form a temporary fixing material layer that can sufficiently fix a semiconductor chip and a sealing body thereof to a support and that can be easily peeled from the semiconductor chip and the sealing body after processing, a resin film for temporarily fixing and a resin film sheet for temporarily fixing prepared with the resin composition for temporarily fixing, and a method for producing a semiconductor device.SOLUTION: A resin composition for temporarily fixing contains a thermoplastic resin and a silicone compound and is used for temporarily fixing a semiconductor chip, and a sealing body that seals the semiconductor chip.SELECTED DRAWING: None

Description

  The present invention relates to a temporarily fixing resin composition, a temporarily fixing resin film, and a temporarily fixing resin film sheet used when temporarily fixing a semiconductor chip sealed with a sealing material.

  In recent years, there has been a growing demand for electronic devices that are small, light, and highly functional. In response to these demands, semiconductor devices constituting electronic devices are also required to be downsized, thinned, and mounted with high density.

  In the manufacture of such a semiconductor device, a semiconductor chip fixed to a substrate or a temporary fixing material or the like is sealed with a sealing resin, and if necessary, the sealed object is a semiconductor device in units of electronic components. A dicing procedure is employed. In such a process, in order to meet the above requirements, a technique for thinning a sealing body after sealing with a sealing resin has been proposed (for example, Patent Document 1, Patent Document 2 and the like). reference). In manufacturing thin semiconductor devices such as flip chip BGA (Ball Grid Array), flip chip SiP (System in Package), fan-in type wafer level package, and fan-out type wafer level package, in addition to thinning by grinding, The application of a thin semiconductor chip is also an important factor.

Japanese Patent No. 3420748 Japanese Patent No. 3666576

  In the manufacturing process of a thin and high-density semiconductor device such as a fan-out type wafer level package, first, after temporarily fixing a plurality of thin semiconductor chips on a temporary fixing material layer formed on a support, A process of embedding a semiconductor chip with a sealing body, then forming a rewiring on the exposed surface of the semiconductor chip by grinding the sealing body, and then peeling the support with the temporarily fixing material layer from the semiconductor chip is proposed. Yes.

  The temporary fixing material used in the above process is required not only to have adhesiveness and heat resistance to high temperature processes, but also to be peelable so that the processed semiconductor chip and sealing body can be easily separated from the support. . In particular, a sealing body in which a semiconductor chip is embedded is often a resin component, and the temporary fixing material tends to be difficult to peel from the sealing body. Are required.

  The present invention has been made in view of the above circumstances, and is capable of sufficiently fixing a semiconductor chip and its sealing body to a support, and a temporary fixing material layer that can be easily peeled off from a processed semiconductor chip and sealing body. It is an object to provide a temporary fixing resin composition that can be formed, a temporary fixing resin film and a temporary fixing resin film sheet using the temporary fixing resin composition, and a method for manufacturing a semiconductor device. .

  The present invention provides a resin composition for temporary fixing, which contains a thermoplastic resin and a silicone compound and is used for temporarily fixing a semiconductor chip and a sealing body that seals the semiconductor chip.

  According to the resin composition for temporary fixing according to the present invention, the semiconductor chip and the sealing body thereof can be sufficiently fixed to the support, and the temporary fixing material layer that can be easily peeled off from the processed semiconductor chip and the sealing body is formed. can do. In addition, the temporary fixing material layer formed from the temporary fixing resin composition according to the present invention can be easily peeled off from the support. Furthermore, the temporary fixing material layer formed from the resin composition for temporary fixing according to the present invention can be peeled off from the semiconductor chip, the sealing body, and the support without performing an operation such as immersing in a solvent. Can do.

  In the resin composition for temporary fixing according to the present invention, the thermoplastic resin is preferably a (meth) acrylic copolymer having a reactive group. In this case, the heat-fixing property and the low-temperature sticking property of the temporarily fixing material layer and the temporarily fixing resin film formed from the temporarily fixing resin composition can be achieved at a higher level.

  In the temporary fixing resin composition according to the present invention, the silicone compound is preferably a silicone-modified alkyd resin. By using such a silicone compound, the adhesiveness and peelability of the temporary fixing material layer formed from the temporary fixing resin composition can be made compatible at a higher level.

  The temporary fixing resin composition according to the present invention preferably further contains a curing accelerator. In this case, it becomes easy to achieve both curability and storage stability of the temporary fixing resin composition according to the present invention.

  The temporary fixing resin composition according to the present invention preferably further contains a thermosetting resin. In this case, the heat resistance of the temporarily fixing resin composition according to the present invention can be further improved.

  The temporary fixing resin composition according to the present invention preferably further contains a photothermal conversion material. In this case, since the adhesiveness of the temporarily fixing resin composition can be reduced by irradiation with radiant energy, the temporarily fixing material layer can be further peeled off from the semiconductor chip and the sealing body.

  In the temporary fixing material resin composition according to the present invention, the photothermal conversion material is preferably carbon black. In this case, the temporarily fixing material layer formed from the temporarily fixing resin composition can be more excellent in releasability from the support.

  The present invention also provides a temporary fixing resin film formed by forming the temporary fixing resin composition according to the present invention into a film shape.

  By the way, in order to give the heat resistance excellent to the temporary fixing material, use of resin excellent in general heat resistance, such as a polyimide which has a high glass transition temperature (Tg), can be considered. However, in order to make it easy to ensure flatness during processing, when the temporary fixing material is made into a film, the glass transition temperature of the resin is high, so that the semiconductor chip and the support are sufficiently bonded together at a high temperature. This must be done and may damage the semiconductor chip. For this reason, the film-like temporary fixing material is required to have a low temperature sticking property that can sufficiently fix the semiconductor chip and the support even if they are bonded together at a low temperature. On the other hand, according to the resin film for temporary fixing which concerns on this invention, heat resistance and low-temperature sticking property can be made compatible in a high level. By using such a temporarily fixing resin film, the semiconductor chip can be processed efficiently. Thereby, a semiconductor element suitable for a SIP package can be efficiently manufactured, and further, a semiconductor device including the semiconductor element can be efficiently manufactured.

  The present invention also provides a temporary fixing resin film sheet comprising a support film having releasability and the temporary fixing resin film according to the present invention provided on the support film. According to the temporarily fixing resin film sheet according to the present invention, the temporarily fixing resin film according to the present invention can be easily transferred to the support, and the semiconductor chip can be processed efficiently.

  The present invention also includes a first step of providing a temporary fixing material layer formed from the temporary fixing resin composition according to the present invention on a support, and a second step of disposing a semiconductor chip on the temporary fixing material layer. A third step of providing a sealing body covering the semiconductor chip, forming a semiconductor chip sealing body having the semiconductor chip and the sealing body, and exposing a surface opposite to the support of the semiconductor chip. A fourth step of grinding the semiconductor chip sealing material, a fifth step of forming wiring on the exposed surface of the semiconductor chip, and a temporary fixing material layer from the semiconductor chip sealing material that has undergone the fourth and fifth steps And a sixth step of peeling off the semiconductor device.

  According to the manufacturing method according to the present invention, by providing a temporary fixing material layer formed from the temporary fixing resin composition according to the present invention, the semiconductor chip and its sealing body are sufficiently fixed to the support and ground. Processing such as wiring formation can be performed satisfactorily, and after processing, the temporary fixing material layer can be easily peeled off from the semiconductor chip and the sealing body without performing operations such as immersing the temporary fixing material layer in a solvent or the like. And a semiconductor device can be efficiently manufactured. Further, in the manufacturing method according to the present invention, the temporary fixing material layer can be easily peeled off from the processed semiconductor chip encapsulated material, so that the stress on the semiconductor chip can be further reduced.

  In the first step of the production method according to the present invention, the temporary fixing material layer may be formed by pasting the temporary fixing resin film according to the present invention on a support.

  In the production method according to the present invention, the support may be a light transmissive support. Moreover, after the said 6th process irradiates a temporary fixing material layer from the light transmissive support body side with radiation energy, a temporary fixing material layer may be peeled from a semiconductor chip sealing thing (semiconductor chip and sealing body). . For example, when a photothermal conversion material or the like is included in the temporarily fixing material layer, the adhesiveness of the temporarily fixing material layer can be reduced by irradiation with radiant energy. Thereby, the temporary fixing material layer can be easily peeled off from the support, and then the temporary fixing material layer can be easily peeled off from the semiconductor chip and the sealing body, thereby further reducing stress on the conductor chip and the sealing body. Is possible. The radiant energy may include light having a wavelength of 1064 nm generated by a YAG laser.

  ADVANTAGE OF THE INVENTION According to this invention, while temporarily fixing a semiconductor chip and its sealing body to a support body, the temporarily fixing resin which enables formation of the temporary fixing material layer which can be easily peeled from the semiconductor chip and sealing body after a process is possible. It is possible to provide a composition, a temporary fixing resin film and a temporary fixing resin film sheet using the temporary fixing resin composition, and a method of manufacturing a semiconductor device.

Fig.1 (a) is a top view which shows one Embodiment of the resin film sheet for temporary fixing which concerns on this invention, FIG.1 (b) is a schematic cross section along the II line | wire of Fig.1 (a). FIG. Fig.2 (a) is a top view which shows other embodiment of the resin film sheet for temporary fixing which concerns on this invention, FIG.2 (b) is a model along the II-II line of Fig.2 (a). It is sectional drawing. FIG. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor chip processing method. FIG. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor chip processing method. FIG. 5 is a schematic cross-sectional view showing an embodiment of a separation process for separating the processed semiconductor chip from the support. Fig.6 (a) is a schematic cross section which shows one Embodiment of the isolation | separation process which isolate | separates a film-form temporary fixing material layer from the processed semiconductor chip. FIGS. 6B and 6C are schematic cross-sectional views for explaining an embodiment of a semiconductor chip processing method.

  Hereinafter, preferred embodiments of the present invention (hereinafter also referred to as “present embodiments”) will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

[Temporary fixing resin composition]
The temporarily fixing resin composition according to the present embodiment contains a thermoplastic resin and a silicone compound, and is used for temporarily fixing a semiconductor chip and a sealing body that seals the semiconductor chip.

  As the thermoplastic resin used in the present embodiment, a resin having thermoplasticity, or a resin having thermoplasticity at least in an uncured state and forming a crosslinked structure after heating can be used. A thermoplastic resin can be used individually by 1 type or in combination of 2 or more types.

  The thermoplastic resin is a (meth) acrylic copolymer having a reactive group from the viewpoint of excellent heat resistance and low temperature sticking property of the temporarily fixing material layer and the temporarily fixing resin film formed from the temporarily fixing resin composition. A coalescence (hereinafter sometimes referred to as “reactive group-containing (meth) acrylic copolymer”) is preferred. In the present specification, (meth) acryl is used to mean either acrylic or methacrylic.

  Examples of the (meth) acrylic copolymer include (meth) acrylic acid ester copolymers such as acrylic glass and acrylic rubber. Among these, acrylic rubber is preferable. The acrylic rubber is preferably formed by copolymerization of a monomer mainly composed of an acrylic ester and selected from (meth) acrylic ester and acrylonitrile. Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, and propyl. Examples include methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate. Specific examples of the copolymer based on a combination of monomers include a copolymer containing butyl acrylate and acrylonitrile as a copolymer component, and a copolymer containing ethyl acrylate and acrylonitrile as a copolymer component.

  The reactive group-containing (meth) acrylic copolymer is preferably a reactive group-containing (meth) acrylic copolymer containing a (meth) acrylic monomer having a reactive group as a copolymerization component. Such a reactive group-containing (meth) acrylic copolymer can be obtained by copolymerizing a monomer composition containing a (meth) acrylic monomer having a reactive group and the above monomer. .

  As the reactive group, an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group and an episulfide group are preferable from the viewpoint of improving heat resistance, and an epoxy group and a carboxyl group are more preferable from the viewpoint of crosslinkability.

  In the present embodiment, the reactive group-containing (meth) acrylic copolymer is preferably an epoxy group-containing (meth) acrylic copolymer containing a (meth) acrylic monomer having an epoxy group as a copolymerization component. In this case, as the (meth) acrylic monomer having an epoxy group, for example, glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl acrylate, glycidyl methacrylate, 4-hydroxybutyl methacrylate glycidyl ether, and 3, 4-epoxycyclohexylmethyl methacrylate is mentioned. Among the (meth) acrylic monomers having a reactive group, glycidyl acrylate and glycidyl methacrylate are preferable from the viewpoint of heat resistance.

  The Tg of the thermoplastic resin is preferably -50 ° C to 50 ° C. When the Tg of the thermoplastic resin is 50 ° C. or less, when a film-like temporary fixing material is formed from the temporary fixing resin composition, flexibility can be easily ensured and low-temperature sticking property can be improved. Further, when the semiconductor chip has irregularities, it becomes easier to embed bumps at 150 ° C. or lower. On the other hand, when the Tg of the thermoplastic resin is −50 ° C. or more, when the film-like temporary fixing material is formed from the temporary fixing resin composition, the handleability and the peelability decrease due to excessively high flexibility. Can be suppressed.

  Tg of a thermoplastic resin is a midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is an intermediate value calculated by a method according to JIS K 7121: 1987 by measuring a change in calorie under conditions of a temperature rising rate of 10 ° C./min and a measurement temperature of −80 to 80 ° C. It is the point glass transition temperature.

  The weight average molecular weight of the thermoplastic resin is preferably 100,000 or more and 2,000,000 or less. When the weight average molecular weight is 100,000 or more, it becomes easy to ensure the heat resistance of the temporarily fixing resin composition. On the other hand, when the weight average molecular weight is 2 million or less, when a film-like temporary fixing material is formed from the temporary fixing resin composition, it is easy to suppress a decrease in flow and a decrease in pastability. In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).

  When the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate and / or glycidyl methacrylate as a copolymerization component, the blending amount is 0.1% by mass or more based on the total amount of the copolymerization component. It may be 0.5% by mass or more, 1.0% by mass or more, 2.0% by mass or more, or 3.0% by mass or more. Good. The blending amount may be 40% by mass or less, may be 35% by mass or less, may be 30% by mass or less, may be 20% by mass or less, and may be 15% by mass or less. It may be 10% by mass or less. The blending amount is, for example, preferably 0.1 to 20% by mass, more preferably 0.5 to 15% by mass, and still more preferably 1.0 to 10% by mass. When the blending amount is within the above range, heat resistance and flexibility can be achieved at a higher level when a film-like temporary fixing material is formed from the temporary fixing resin composition. From the same viewpoint, the blending amount is preferably 1.0 to 40% by mass, more preferably 2.0 to 35% by mass, and further preferably 3.0 to 30% by mass. .

  When the resin composition for temporary fixing according to the present embodiment further contains a photothermal conversion material to be described later, the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate and / or glycidyl methacrylate as a copolymerization component. The total amount is preferably 1.0 to 40% by mass, more preferably 2.0 to 35% by mass, and 3.0 to 30% by mass based on the total amount of the copolymerization components. More preferably it is. When the blending amount is within the above range, heat resistance and flexibility can be achieved at a higher level when a film-like temporary fixing material is formed from the temporary fixing resin composition.

  As the (meth) acrylic copolymer having a reactive group as described above, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or HTR-860P-3CSP (Nagase ChemteX Corporation) Commercial products such as a company name, product name) may be used.

  The content of the thermoplastic resin in the temporarily fixing resin composition of the present embodiment is preferably 30 to 99% by mass, more preferably 50 to 95% by mass, based on the total amount of the temporarily fixing resin composition.

  The silicone compound used in the present embodiment can be used without particular limitation as long as it has a polysiloxane structure. For example, silicone modified resin, straight silicone oil, non-reactive modified silicone oil, reactive modified silicone oil and the like can be mentioned. A silicone compound can be used individually by 1 type or in combination of 2 or more types.

  When the temporarily fixing resin composition contains a silicone compound, the film-like temporarily fixing material formed from the temporarily fixing resin composition is peeled off from the semiconductor chip, the sealing body and the support body at 100 ° C. or lower. Even at a low temperature, it can be easily peeled off without using a solvent.

  When the silicone compound used in this embodiment is a silicone-modified resin, a silicone-modified alkyd resin is preferable.

  As a method for obtaining a silicone-modified alkyd resin, for example, (i) a normal synthesis reaction for obtaining an alkyd resin, that is, when reacting a polyhydric alcohol with a fatty acid, a polybasic acid, etc., the organopolysiloxane is simultaneously used as an alcohol component. And (ii) a method in which an organopolysiloxane is reacted with a general alkyd resin synthesized in advance.

  Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol, glycerin, trimethylolethane, Examples thereof include trihydric alcohols such as trimethylolpropane, and tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannitol, and sorbit. These may be used individually by 1 type and may be used in combination of 2 or more type.

  Examples of the polybasic acid used as a raw material for the alkyd resin include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, and trimetic anhydride, and aliphatic saturated polybasic acids such as succinic acid, adipic acid, and sebacic acid. Aliphatic unsaturated polybasic acids such as basic acid, maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, cyclopentadiene-maleic anhydride adduct, terpene-maleic anhydride adduct, rosin-maleic anhydride Examples thereof include polybasic acids by Diels-Alder reaction such as acid adducts. These may be used individually by 1 type and may be used in combination of 2 or more type.

  As the silicone-modified alkyd resin, for example, commercially available products such as Tesfine 319 and TA31-209E (above, trade name, manufactured by Hitachi Chemical Polymer Co., Ltd.) can be used.

  The alkyd resin may further contain a modifier or a crosslinking agent.

  Examples of the modifying agent include octylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linolenic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, or coconut oil, linseed oil, gill oil, castor oil. Dehydrated castor oil, soybean oil, safflower oil, and these fatty acids can be used. These may be used individually by 1 type and may be used in combination of 2 or more type.

  When the resin composition for temporary fixing according to the present embodiment contains a silicone-modified alkyd resin, it is preferable to further include a crosslinking agent capable of thermally crosslinking the silicone-modified alkyd resin, or a crosslinking agent and a catalyst. Examples of such crosslinking agents include amino resins such as melamine resins and urea resins. In this case, the heat resistance and peelability of the film-like temporary fixing material formed from the temporary fixing resin composition can be further improved.

  Examples of the crosslinking agent include amino resins such as melamine resins and urea resins, urethane resins, epoxy resins, and phenol resins. Among these, when an amino resin is used, an amino alkyd resin crosslinked with an amino resin is preferably obtained. A crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  In the silicone-modified alkyd resin, an acidic catalyst can be used as a curing catalyst. The acidic catalyst can be used without any particular limitation, and can be appropriately selected from known acidic catalysts as a crosslinking reaction catalyst for alkyd resins. As such an acidic catalyst, for example, an organic acidic catalyst such as p-toluenesulfonic acid and methanesulfonic acid is suitable. An acidic catalyst may be used individually by 1 type, and may be used in combination of 2 or more type. Moreover, the compounding quantity of an acidic catalyst is 0.1-40 mass parts normally with respect to a total of 100 mass parts of alkyd resin and a crosslinking agent, Preferably it is 0.5-30 mass parts, More preferably, it is 1-20 mass parts. It is selected in the range.

  The surface free energy of the silicone-modified alkyd resin is preferably 15 to 30 mN / m. When the surface free energy of the silicone-modified alkyd resin is in such a range, the heat resistance and the peelability of the temporarily fixing material layer formed from the temporarily fixing resin composition can be made compatible at a higher level. Furthermore, it is more preferable that the resin composition for temporary fixing includes a silicone-modified alkyd resin having a surface free energy of 15 to 27 mN / m from the viewpoint of heat resistance, and a silicone-modified alkyd resin of 15 to 24 mN / m. It is more preferable to include. The surface free energy was measured with a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) on a 0.3 μm thick film obtained by applying a silicone-modified alkyd resin on a PET film and drying at 150 ° C. for 30 seconds. The contact angle of water, ethylene glycol, and methyl iodide can be measured using CA-X type, and can be calculated using surface free energy analysis software (EG-2 manufactured by Kyowa Interface Science Co., Ltd.).

  The compounding amount of the silicone compound in the temporarily fixing resin composition according to the present embodiment is 1.0 to 100 parts by mass in total with respect to 100 parts by mass of the thermoplastic resin from the viewpoint of the balance between solubility and adhesiveness. Preferably, 3.0-80 mass parts is more preferable. From the same viewpoint, the compounding amount of the silicone compound may be 3.0 to 50 parts by mass or 5.0 to 40 parts by mass. When the blending amount of the silicone compound is within the above range, the peelability of the temporarily fixing material from the semiconductor chip and the sealing body is further improved.

  The temporary fixing resin composition according to the present embodiment preferably further contains a photothermal conversion material.

  As the photothermal conversion material, a substance that generates heat by absorbing radiant energy described later can be used. Examples of the photothermal conversion material include carbon black; carbon fiber; griffite powder; fine metal powder such as iron, aluminum, copper, and nickel; metal oxide powder such as black titanium oxide. A photothermal conversion material can be used individually by 1 type or in combination of 2 or more types.

  When a photothermal conversion material is contained in the temporarily fixing resin composition, the releasability can be facilitated by irradiation with radiant energy. For example, by irradiating the temporary fixing material containing the photothermal conversion material with radiant energy, the components of the temporary fixing material can be thermally decomposed by the thermal energy generated from the photothermal conversion material, and voids can be generated. Thereby, the adhesiveness of the temporary fixing material can be lowered, and the separability can be further improved. Carbon black is preferable because the above-mentioned action can be obtained efficiently.

  The blending amount of the photothermal conversion material in the resin composition for temporary fixing according to the present embodiment varies depending on the type, particle form, dispersity, and the like of the photothermal conversion material, but the blending amount of the photothermal conversion material is for temporary fixing. Preferably it is 0.5-50 mass parts with respect to 100 mass parts of whole quantity of a resin composition, More preferably, it is 0.8-40 mass parts, More preferably, it is 1.0-30 mass parts. If the compounding amount of the photothermal conversion material is 0.5 parts by mass or more, sufficient heat is generated to thermally decompose the constituent components when the temporary fixing material formed from the temporary fixing resin composition is irradiated with radiant energy. It is easy to get energy. If the compounding amount of the photothermal conversion material is 50 parts by mass or less, the film-forming property of the temporarily fixing resin composition can be maintained, so that a sticking failure to a support or the like hardly occurs. Such an effect is remarkable when general carbon black having a particle size of about 5 to 500 nm is used as the photothermal conversion material. The particle size of the photothermal conversion material is determined by heating the resin composition for temporary fixation in an oven at 600 ° C. for 2 hours, decomposing and volatilizing the resin component, and observing the residue with an SEM, a laser diffraction scattering type particle size distribution measuring device It can be derived by the method of using and measuring.

  The resin composition for temporary fixing according to the present embodiment contains a curing accelerator, a thermosetting resin, an organic solvent, and other components as necessary in addition to the thermoplastic resin, the silicone compound, and the photothermal conversion material. Can do.

  Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5, 4,0] undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  When the resin composition for temporary fixing according to the present embodiment contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that accelerates curing of the epoxy group contained in the acrylic copolymer. Is preferred. Examples of curing accelerators that accelerate the curing of epoxy groups include phenolic curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, imidazoline curing agents, triazine curing agents, and phosphine curing agents. Agents. Among these, from the viewpoint of fast curability, heat resistance, and peelability, an imidazole-based curing agent that can be expected to shorten process time and improve workability is preferable. These compounds can be used individually by 1 type or in combination of 2 or more types.

  0.01-50 mass parts is preferable with respect to 100 mass parts of thermoplastic resins, and, as for the compounding quantity of the hardening accelerator in the resin composition for temporary fixing which concerns on this embodiment, 0.05-20 mass parts is more preferable. When the blending amount of the curing accelerator is within the above range, it tends to be able to sufficiently suppress a decrease in storage stability while improving the curability of the temporary fixing resin composition according to the present embodiment.

  As the thermosetting resin, any resin that can be cured by heat can be used without particular limitation.

  Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin. These can be used alone or in combination of two or more. In particular, as the thermosetting resin, it is preferable to use an epoxy resin from the viewpoint of obtaining a temporarily fixing resin composition having excellent heat resistance, workability, and reliability. When using an epoxy resin as the thermosetting resin, it is preferable to use an epoxy resin curing agent together.

  The epoxy resin is not particularly limited as long as it is cured and has a heat resistance. As the epoxy resin, a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin, a cresol novolak type epoxy resin, or the like can be used. As the epoxy resin, generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic ring-containing epoxy resin, and an alicyclic epoxy resin can be applied.

  As the bisphenol A type epoxy resin, Epicoat series (trade name: Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat, manufactured by Japan Epoxy Resin Co., Ltd. 1009), trade names made by Dow Chemical Company: DER-330, DER-301, DER-361, trade names made by Tohto Kasei Co., Ltd .: YD8125, YDF8170, and the like. As the phenol novolac type epoxy resin, trade names manufactured by Japan Epoxy Resins Co., Ltd .: Epicoat 152, Epicoat 154, trade names manufactured by Nippon Kayaku Co., Ltd .: EPPN-201, trade names manufactured by Dow Chemical Co., Ltd .: DEN- 438 or the like. As the o-cresol novolac type epoxy resin, trade names of Nippon Kayaku Co., Ltd .: EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, Toto Kasei Co., Ltd. Product names: YDCN701, YDCN702, YDCN703, YDCN704 and the like. As the multifunctional epoxy resin, trade name: Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd., trade name: Araldite 0163 manufactured by Ciba Specialty Chemicals, Inc., trade name: Denacol EX-611 manufactured by Nagase ChemteX Corporation, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321 and the like. As the amine type epoxy resin, product name: Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd., product name: YH-434 manufactured by Toto Kasei Co., Ltd., product name: TETRAD-X manufactured by Mitsubishi Gas Chemical Co., Ltd. TETRAD-C, trade name: ELM-120 manufactured by Sumitomo Chemical Co., Ltd. Examples of the heterocyclic ring-containing epoxy resin include trade names manufactured by Ciba Specialty Chemicals: Araldite PT810, and trade names manufactured by UCC: ERL4234, ERL4299, ERL4221, ERL4206, and the like. These epoxy resins can be used individually by 1 type or in combination of 2 or more types.

  As the epoxy resin curing agent, known curing agents that are usually used can be used. For example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S can be used. Examples thereof include bisphenols having two or more phenolic hydroxyl groups in one molecule, phenol resins such as phenol novolac resin, bisphenol A novolak resin, and cresol novolac resin. As the epoxy resin curing agent, phenol resins such as phenol novolak resin, bisphenol A novolak resin, and cresol novolak resin are particularly preferable from the viewpoint of excellent electric corrosion resistance during moisture absorption.

  Preferred examples of the phenol resin curing agent include, for example, trade names: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite, manufactured by Dainippon Ink & Chemicals, Inc. VH-4150, Phenolite VH4170, Meiwa Kasei Co., Ltd., trade name: H-1, Japan Epoxy Resin Co., Ltd., trade name: EpiCure MP402FPY, EpiCure YL6065, EpiCure YLH129B65 and Mitsui Chemicals, Inc. Name: Milex XL, Milex XLC, Milex RN, Milex RS, Milex VR and the like.

  10-300 mass parts is preferable with respect to 100 mass parts of thermoplastic resins, and, as for the compounding quantity of the thermosetting component in the resin composition for temporarily fixing which concerns on this embodiment, 30-100 mass parts is more preferable. When the blending amount of the thermosetting component is within the above range, the temporary fixing resin composition according to this embodiment can easily achieve both sufficient low-temperature sticking property and heat resistance.

  The temporary fixing resin composition according to the present embodiment can further contain an inorganic filler. Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the temporarily fixing resin composition, and the nonmetallic inorganic filler is for the purpose of imparting low thermal expansion and low moisture absorption to the temporarily fixing resin composition. Can be added. An inorganic filler can be used individually by 1 type or in combination of 2 or more types.

  The inorganic filler preferably has an organic group on the surface. Dispersibility in an organic solvent when preparing a resin composition for temporary fixing, and a film-like temporary fixing material formed from the resin composition for temporary fixing, because the surface of the inorganic filler is modified with an organic group It becomes easy to improve the adhesiveness and heat resistance.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. . It can be confirmed by UV measurement, IR measurement, XPS measurement or the like that the surface of the inorganic filler is modified with an organic group.

In formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group, and s Represents an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represents an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group, and isobutyl group. Can be mentioned. The alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group or a pentyl group from the viewpoint of easy availability. From the viewpoint of heat resistance, X is preferably an amino group, a glycidoxy group, a mercapto group, or an isocyanate group, and more preferably a glycidoxy group or a mercapto group. S in formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing film fluidity during high heat and improving heat resistance.

  Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N -(2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxy Lan, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propane Examples include amine, N, N′-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, polyethoxydimethylsiloxane, and the like. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

  The amount of the coupling agent used is preferably 0.01 to 50 parts by weight, and 0.05 parts by weight with respect to 100 parts by weight of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Part-20 mass parts is more preferable, and 0.5-10 mass parts is still more preferable from a viewpoint of a heat resistant improvement.

  The blending amount of the inorganic filler in the temporarily fixing resin composition according to this embodiment is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less, with respect to 100 parts by mass of the thermoplastic resin. . Although the minimum of the compounding quantity of an inorganic filler does not have a restriction | limiting in particular, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins. By making the compounding quantity of an inorganic filler into the said range, it becomes easy to provide a desired function, ensuring sufficient adhesiveness of the film-form temporary fixing material formed from the resin composition for temporary fixing.

  An organic filler can be further blended in the temporarily fixing resin composition according to the present embodiment. Examples of the organic filler include rubber fillers, silicone fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin. Although the minimum of the compounding quantity of an inorganic filler does not have a restriction | limiting in particular, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

  The temporarily fixing resin composition according to the present embodiment may be further diluted with an organic solvent as necessary. The organic solvent is not particularly limited, and can be determined from the boiling point in consideration of volatility during film formation. Specifically, for example, a relatively low boiling point solvent such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene is used during film formation. It is preferable from the viewpoint that the curing of the film hardly proceeds. For the purpose of improving the film-forming property, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone. These solvents can be used alone or in combination of two or more.

  The solid content concentration of the temporarily fixing resin composition according to this embodiment is preferably 10 to 80% by mass.

  The resin composition for temporary fixing according to the present embodiment is a mixture of a thermoplastic resin and a silicone compound, and, if necessary, a photothermal conversion material, a curing accelerator, a thermosetting resin, an organic solvent, and other components, It can be prepared by kneading. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a bead mill.

[Temporary fixing resin film]
The temporarily fixing resin film according to the present embodiment is formed by forming the temporary fixing resin composition according to the present embodiment into a film shape.

  The temporarily fixing resin film according to the present embodiment can be easily manufactured by, for example, applying a temporarily fixing resin composition to a support film. Moreover, when the resin composition for temporary fixing is diluted with the organic solvent, it can manufacture by apply | coating this resin composition to a support film, and removing an organic solvent by heat drying.

  The temporary fixing resin film provided on the support film can be attached with a protective film as necessary. In this case, a temporary fixing resin film sheet having a three-layer structure composed of a support film, a temporary fixing resin film, and a protective film, which will be described later, can be obtained.

  The temporary fixing resin film sheet thus obtained can be easily stored by, for example, winding it into a roll. Moreover, a roll-shaped film can be cut out into a suitable size and stored in a sheet shape.

  Fig.1 (a) is a top view which shows one Embodiment of the resin film sheet for temporary fixation of this embodiment, FIG.1 (b) is a schematic cross section along the II line | wire of Fig.1 (a). It is.

  A temporary fixing resin film sheet 100 shown in FIG. 1 includes a support film 10 having releasability, a temporary fixing resin film 20 provided on the support film 10, and a supporting film 10 of the temporary fixing resin film 20. Includes a protective film 30 provided on the opposite side. The temporarily fixing resin film 20 is formed by forming the temporarily fixing resin composition according to the present embodiment into a film shape.

  The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. From the viewpoint of flexibility and toughness, the support film is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, polyimide, or the like. In addition, from the viewpoint of improving releasability from the temporarily fixing resin film (resin layer), it is preferable to use as the support film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.

  The thickness of the support film 10 may be appropriately changed depending on the intended flexibility, but is preferably 3 to 250 μm. If the thickness is 3 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and particularly preferably 7 to 150 μm.

  The thickness of the temporarily fixing resin film 20 of the present embodiment is not particularly limited, but the thickness after drying is preferably 5 to 300 μm. If the thickness is 5 μm or more, it is easy to sufficiently secure the strength of the film or a cured product of the film, and if it is 300 μm or less, it becomes easy to reduce the amount of residual solvent in the film by sufficient drying. It is possible to further reduce foaming when the cured product is heated.

  In the case of manufacturing a thick film, a previously formed film having a thickness of 100 μm or less may be bonded. By using the films bonded in this way, the residual solvent when producing a thick film can be reduced.

  Although there is no restriction | limiting in particular as the protective film 30, For example, a polyethylene terephthalate, a polybutylene terephthalate, a polyethylene naphthalate, polyethylene, a polypropylene etc. are mentioned. From the viewpoint of flexibility and toughness, the protective film is preferably polyethylene terephthalate, polyethylene, polypropylene or the like. Further, from the viewpoint of improving the peelability from the temporarily fixing resin film (resin layer), it is preferable to use as the protective film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.

  The thickness of the protective film 30 can be appropriately set depending on the intended flexibility. The thickness of the protective film 30 is preferably 10 to 250 μm. If the thickness is 10 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and particularly preferably 20 to 150 μm.

  Fig.2 (a) is a top view which shows other embodiment of the resin film sheet for temporary fixing which concerns on this invention, FIG.2 (b) is a schematic cross section along the II-II line of Fig.2 (a). FIG.

  The temporarily fixing resin film sheet 200 shown in FIG. 2 is the same as the temporarily fixing resin film sheet 100 except that the temporarily fixing resin film 20 and the protective film 30 are cut in advance according to the shape of the temporarily fixed member. It has the same configuration. In FIG. 2, the outer edge portions of the temporarily fixed resin film 20 and the protective film 30 that have been cut are removed, but the temporary fixing resin film and the protective film are notched according to the shape of the temporarily fixed member. And the outer edge may be left.

[Semiconductor Device Manufacturing Method]
The manufacturing method of the semiconductor device according to this embodiment is roughly divided into the following six steps.
The method of this embodiment includes a first step of providing a temporary fixing material layer formed from the temporary fixing resin composition on a support, a second step of disposing a semiconductor chip on the temporary fixing material layer, A third step of providing a sealing body that covers the semiconductor chip and forming a semiconductor chip sealing body having the semiconductor chip and the sealing body; and a surface of the semiconductor chip that is opposite to the support body of the semiconductor chip is exposed. The fourth step of grinding the chip sealing material, the fifth step of forming wiring on the exposed surface of the semiconductor chip, and the temporary fixing material is peeled from the semiconductor chip sealing material that has undergone the fourth and fifth steps. And a sixth step.

  3, 4, 5, and 6 are schematic cross-sectional views for explaining an embodiment of a method for manufacturing a semiconductor device. The method of this embodiment will be described with reference to these drawings.

<First step>
(A) and (b) of FIG. 3 is a process of providing the support 1 with a film-like temporary fixing material layer 21 formed from the temporary fixing resin composition or the temporary fixing resin film according to this embodiment. Show.

  When the temporarily fixing resin composition is used, the temporarily fixing material layer 21 can be formed on the support by a method such as spin coating. When the temporarily fixing resin composition is diluted with an organic solvent, after spin coating, the organic solvent is removed by heating and drying according to the volatilization conditions of the solvent to form the temporarily fixing material layer 21. Can do.

  When a preliminarily prepared resin film for temporary fixing is used, the resin film for temporary fixing is laminated on the support under a predetermined condition (for example, room temperature (20 ° C.) or heated state) using a roll laminator, a vacuum laminator, or the like. Thus, the temporary fixing material layer 21 can be provided.

  The material of the support 1 of this embodiment is not particularly selected, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used. When performing the peeling method of irradiating radiant energy, the material of the support 1 is not particularly limited as long as it is light transmissive, but a light transmissive support such as a glass wafer or a quartz wafer can be used.

  You may perform a peeling process to the support body 1 of this embodiment. A release layer can be formed by subjecting all or part of the surface of the support 1 to a release treatment. The release agent used for the release treatment is not particularly limited. As the release agent, for example, a surface modifier having an elemental fluorine, a polyolefin wax and silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin are preferable because of excellent release properties.

<Second step>
Next, a plurality of semiconductor chips 3 are arranged on the support 1 on which the temporarily fixing material layer 21 is formed. On the temporary fixing material layer 21, a plurality of semiconductor chips 3 can be individually pressure-bonded and arranged under a predetermined condition (for example, room temperature (20 ° C.) or a heated state).

  For crimping the semiconductor chip 3, for example, a flip chip bonder can be used. For example, using a flip chip bonder manufactured by Shinkawa Co., Ltd., supported by the temporary fixing material layer 21 with a pressure of 0.01 to 1 MPa, a pressure of 20 to 120 ° C., and a holding time of 0.1 to 60 seconds. The semiconductor chip 3 can be arranged on the body 1.

  After the semiconductor chip 3 is disposed on the support 1 via the temporary fixing material layer 21, the temporary fixing material layer 21 may be thermoset under predetermined conditions (100 to 200 ° C. for 5 to 180 minutes) as necessary. Good.

  Each of the plurality of semiconductor chips 3 is obtained by cutting a semiconductor wafer into a predetermined size and cutting it into chips. The thickness of the semiconductor chip 3 is preferably 1 μm to 1000 μm, more preferably 10 μm to 500 μm, and more preferably 20 μm to 200 μm from the viewpoint of suppressing cracking during transport or pressure bonding process in addition to downsizing and thinning of the semiconductor device. Is more preferable.

  When the temporary fixing material layer 21 having the above-described configuration is used, a semiconductor device can be manufactured at a high temperature using the support 1, and the semiconductor chip 3 and the support 1 are attached to the temporary fixing material layer 21 at room temperature after manufacturing. Can be peeled off without any adhesive residue.

<Third step>
Next, as shown in FIG. 3 (d), a sealing body 4 that covers the plurality of semiconductor chips 3 disposed on the temporary fixing material layer 21 is formed, and the semiconductor chip having the semiconductor chip 3 and the sealing body 4. The sealing material 41 is obtained. Although there is no restriction | limiting in particular in the material of the sealing body 4, A thermosetting resin composition is preferable from viewpoints, such as heat resistance and other reliability. Examples of the thermosetting resin used for the sealing body 4 include epoxy resins such as a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl diepoxy resin, and a naphthol novolac epoxy resin. To the composition for forming the sealing body 4, additives such as a flame retardant substance such as a filler and / or a bromine compound may be added.

  There is no restriction | limiting in particular in the supply form of the sealing body 4, A solid material, a liquid material, a fine grain material, a sheet material etc. are mentioned.

  For example, a compression sealing molding machine, a vacuum laminating apparatus, or the like is used for sealing the semiconductor chip 3 with the sealing body 4 formed from a sealing sheet. For example, using the above apparatus, heat is applied under conditions of 40 to 180 ° C. (preferably 60 to 150 ° C.), 0.1 to 10 MPa (preferably 0.5 to 8 MPa), and 0.5 to 10 minutes. The sealing chip 4 can be formed by covering the semiconductor chip 3 with a molten sealing sheet. The sealing sheet may be prepared in a state of being laminated on a release liner such as a polyethylene terephthalate (PET) film. In this case, after the sealing sheet is arranged on the semiconductor chip 3 side and the semiconductor chip 3 is embedded, the sealing body 4 can be formed by peeling the release liner.

  The thickness of the sealing sheet requires that the sealing body 4 be equal to or greater than the thickness of the semiconductor chip 3. In this case, the thickness of the sealing sheet is preferably 50 μm to 2000 μm, more preferably 70 μm to 1500 μm, and still more preferably 100 μm to 1000 μm in view of the thickness of the semiconductor chip 3. If the thickness of the sealing sheet is 50 μm or more, there is a tendency that the thickness of the semiconductor chip 3 to be used need not be excessively reduced. In this case, when the semiconductor chip 3 is disposed on the temporary fixing material layer 21 or when the semiconductor chip 3 is embedded and sealed with a sealing sheet, the semiconductor chip 3 tends to be difficult to break. Moreover, if the thickness of a sealing sheet is 2000 micrometers or less, the time concerning a subsequent process can further be reduced.

  The manufacturing method of a sealing sheet is not specifically limited. For example, a method of preparing a kneaded product of the resin composition and applying the obtained kneaded product to form a sealing sheet, or a method of forming the kneaded product by plastic working into a sheet shape is mentioned. It is done.

  Moreover, after covering the semiconductor chip 3 with the sealing body 4, the heat processing for the purpose of thermosetting can be performed on predetermined conditions. In this case, the whole sealing body 4 covering the semiconductor chip 3 can be heated. As conditions for the thermosetting treatment, the heating temperature is 100 ° C. or higher, preferably 120 ° C. or higher. On the other hand, the upper limit of the heating temperature is 200 ° C. or less, preferably 180 ° C. or less. The heating time is 10 minutes or more, preferably 180 minutes or less.

<Fourth process>
Next, as shown in FIG. 4A, the semiconductor chip sealing material 41 is ground so that the surface 3a of the embedded semiconductor chip 3 is exposed. A method for grinding the semiconductor chip sealing object 41 is not particularly limited, and a known grinding method can be used. For example, a grinding method using a grindstone rotating at high speed can be mentioned. In this case, it is preferable to perform the grinding while cooling the sealing body and a grindstone (such as diamond) with water. The surface 3a of the semiconductor chip 3 is a surface opposite to the support 1 side. By grinding or the like, for example, bumps provided on the semiconductor chip or a part of the lead wiring can be exposed.

  Examples of the grinding device include DGP-8761 (trade name) manufactured by DISCO Corporation. The cutting conditions in this case can be arbitrarily selected according to the desired thickness and grinding state of the semiconductor device.

<Fifth process>
Next, as shown in FIG. 4B, a rewiring (wiring) 5 is formed on the surface 3 a of the semiconductor chip 3 exposed by grinding in the ground semiconductor chip sealing material 42. As a method for forming the rewiring 5, for example, a metal seed layer is formed on the exposed semiconductor chip 3 using a known method such as a vacuum film forming method, and then a known method such as a semi-additive method. The rewiring 5 can be formed. After the rewiring 5 is formed, an insulating layer such as polyimide or PBO (polybenzoxazole) may be formed on the rewiring 5 and the sealing body. In the semi-additive method, a metal seed layer is formed, a resist having a desired pattern is formed on the metal seed layer, and the exposed portion of the metal seed layer is thickened by electrolytic plating or the like to remove the resist. Then, the thin metal seed layer is etched to obtain a wiring.

  Next, as shown in FIG. 4C, a bumping process for forming bumps 6 on the formed rewiring 5 is performed. The bumping process can be performed by a known method using solder balls or solder plating. Hereinafter, the assembly of the semiconductor chip sealing body 42 that has undergone the fourth and fifth steps, that is, the assembly of the semiconductor chip 3 on which the rewiring 5 and the bump 6 are formed, and the ground sealing body 4 is referred to as the device forming body 7. Also called.

<Sixth step>
5 (a), 5 (b), 6 (a), and 6 (b) illustrate an embodiment of the process of separating the device forming body 7 from the support 1 and the temporary fixing material layer 21. FIG. It is a schematic cross section for doing. The process which concerns on this embodiment is the 1st peeling process which isolate | separates the device formation body 7 with the temporary fixing material layer 21 from the support body 1, and the 2nd peeling which peels the temporary fixing material layer 21 from the device formation body 7. And a process. That is, the surface of the semiconductor chip is exposed by grinding the sealing body 4, the wiring is formed on the semiconductor chip surface side, and then the device forming body 7 is peeled from the support 1 and the temporary fixing material layer 21 before dicing. It is a process.

  A 1st peeling process is a process of peeling the device formation body 7 from a support body. As a peeling method, mainly the device forming body 7 and the support body 1 are heated (preferably 200 to 250 ° C.) while being slid in the opposite direction along the horizontal direction, FIG. b) a method in which one of the support 1 and the device forming body 7 or the support 1 is fixed horizontally and the other is lifted at a certain angle from the horizontal direction, and the device forming body 7 Examples include a method of attaching a protective film, and peeling the device forming body 7 and the protective film from the support in a peel method. These methods can be employed without any particular limitation.

  Although all of these peeling methods can be applied to this embodiment, one of the support 1 and the device forming body 7 or the support 1 as shown in FIG. 5B is fixed horizontally. Further, a method of lifting the other from the horizontal direction at a certain angle, a method of attaching a protective film to the device forming body 7, and peeling the device forming body 7 and the protective film by a peel method are more suitable. Although these peeling methods are normally implemented at room temperature, you may implement under the temperature which does not damage a device formation body of about 40-100 degreeC. When mechanically disassembling, for example, a De-Bonding device EVG805EZD (trade name) manufactured by EVG is used.

  When the temporary fixing material layer 21 includes a light-to-heat conversion material, the support 1 can be peeled at a lower stress than mechanical peeling by the radiant energy 8 by using a light-transmissive support. is there. In the step of peeling the temporarily fixing material layer 21 and the device forming body 7 from the light transmissive support 1, as shown in FIG. 5A, the radiant energy 8 is temporarily supplied from the light transmissive support 1 side. The layer 21 is irradiated. At this time, the radiant energy 8 is absorbed by the photothermal conversion material included in the temporary fixing material layer 21, and the radiant energy 8 is converted into thermal energy in the temporary fixing material layer 21. The component (for example, resin component) which comprises the temporary fixing material layer 21 is thermally decomposed when the generated thermal energy raises the temperature of the photothermal conversion material rapidly. As a result, voids (voids) are generated in the temporary fixing material layer 21 (particularly, in the vicinity of the interface between the temporary fixing material layer 21 and the light-transmitting support 1), and the light-transmitting support 1 is used as the temporary fixing material. It becomes easy to separate from the layer 21.

  The radiant energy 8 has a wavelength of light absorbed by the temporarily fixing material layer 21, and the temporarily fixing material layer 21 is thermally melted or thermally decomposed, so that the light-transmissive support 1 and the temporarily fixing material layer 21 Is supplied by a laser beam capable of outputting light of sufficient energy to separate the light. Specific examples of the laser light include a YAG laser that generates light having a wavelength of 1064 nm, a double-high gradation YAG laser that generates light having a wavelength of 532 nm, or a semiconductor laser that generates light having a wavelength of 780 nm to 1300 nm. . From the viewpoint of the scale, versatility, cost, and the like of the laser irradiation apparatus, a YAG laser that generates light having a wavelength of 1064 nm is preferably used. Regarding the laser irradiation conditions, the balance between the output that separates the light-transmissive support 1 and the temporary fixing material layer 21, the output that can reduce the damage to the device forming body 7, and the leakage energy to the adjacent region is considered. Is set.

  In the second peeling step, for example, the temporary fixing material 2 is peeled by fixing the device forming body 7 horizontally and lifting the end of the temporary fixing material layer 21 at a certain angle from the horizontal direction. A device forming body 7 can be obtained (see FIG. 6A and FIG. 6B). For example, an adhesive tape having a higher adhesive strength than the device forming body 7 and the temporary fixing material layer 21 is bonded to the surface of the temporary fixing material layer 21 opposite to the surface in contact with the device forming body 7, and then the adhesive A method may be used in which the tape and the temporary fixing material layer 21 are removed from the device forming body 7 together. Thereby, as shown in FIG. 6B, the temporarily fixing material layer 21 is removed from the device forming body 7. In the present embodiment, the temporary fixing material layer 21 is formed using the temporary fixing resin composition according to the present embodiment, whereby the device forming body 7 in which residues such as adhesive residue are sufficiently reduced can be easily obtained. Can be obtained.

  In this embodiment, you may isolate | separate between the device formation body 7 and the temporary fixing material layer 21 at a 1st peeling process.

<Washing process>
When a part of the temporarily fixing material layer 21 remains on the peeled device-formed body 7, a cleaning step for removing it can be provided. The temporary fixing material layer 21 can be removed, for example, by washing the device forming body 7.

  The cleaning liquid to be used is not particularly limited as long as it is a cleaning liquid that can remove a partially remaining temporary fixing material layer 21. Examples of the cleaning liquid include the organic solvents that can be used for diluting the temporarily fixing resin composition. These organic solvents can be used individually by 1 type or in combination of 2 or more types.

  In addition, when the remaining temporary fixing material layer 21 is difficult to remove, bases and acids may be added to the organic solvent. Examples of bases that can be used include amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; and ammonium salts such as tetramethylammonium hydroxide. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The addition amount is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid. In order to improve the removability of the residue, an existing surfactant may be added.

  Although there is no restriction | limiting in particular as a washing | cleaning method, For example, the method of washing | cleaning with a paddle using the said washing | cleaning liquid, the washing | cleaning method by spraying, and the method of immersing in a washing | cleaning-liquid tank are mentioned. 10-80 degreeC is preferable and the temperature at this time has more preferable 15-65 degreeC. Finally, washing with water or alcohol is performed, and a drying process is performed to obtain the device formed body 7.

  Note that, as described above, according to the temporarily fixing resin composition according to the present embodiment, residues such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

  Next, as shown in FIG. 6C, the device forming body 7 composed of elements such as the semiconductor chip 3, the sealing body 4, the rewiring 5, and the bump 6 is diced. Specifically, the semiconductor chip 3 provided with the rewiring 5 and the bump 6 is separated into pieces by dicing the sealing body 4 positioned between the adjacent semiconductor chips 3. Thereby, the semiconductor element 9 in which the wiring is drawn outside the chip region can be obtained.

  In the present embodiment, a semiconductor device can be manufactured by connecting the obtained semiconductor element 9 to another semiconductor element or a semiconductor element mounting substrate.

  According to the method for manufacturing a semiconductor device according to the present embodiment, a thin and high-density semiconductor device such as a fan-out type wafer level package can be manufactured with low stress.

  As described above, by providing a temporarily fixing material layer formed from the temporarily fixing resin composition according to the present embodiment, the semiconductor chip and its sealing body are sufficiently fixed to the support, and then ground, wired Processing such as formation can be performed satisfactorily, and after processing, the temporary fixing material layer can be easily peeled off from the semiconductor chip and the sealing body without performing operations such as immersing the temporary fixing material layer in a solvent or the like A semiconductor device can be manufactured efficiently. Further, in the manufacturing method according to the present embodiment, the temporary fixing material layer can be easily peeled from the processed semiconductor chip encapsulated material, so that the stress on the semiconductor chip can be further reduced. When the temporary fixing material layer includes a photothermal conversion material, the temporary fixing material layer is irradiated from the support by irradiating the temporary fixing material layer from the support side with a light-transmitting support. Since the temporary fixing material layer can be easily peeled from the semiconductor chip and the sealing body, the stress on the semiconductor chip can be further reduced.

  EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

(Examples 1-15, Comparative Examples 1-7)
[Preparation of varnish for temporarily fixing resin composition]
Cyclohexanone is blended with a thermoplastic resin, a silicone compound, a thermosetting component, a photothermal conversion material, a curing accelerator, and a solvent as a solvent in the composition of parts by mass shown in Tables 1 to 4, and the varnish (solid) A partial concentration of 30% by mass) was prepared.

[Preparation of temporarily fixing resin film]
The prepared varnish was applied on a release-treated surface of a release-treated polyethylene terephthalate film (manufactured by Teijin DuPont Films, trade name: A31, thickness: 38 μm), at 90 ° C. for 10 minutes, and at 120 ° C. for 30 minutes. It heat-dried and obtained the resin film for temporary fixing with a protective film and a support film, respectively. The film thickness of the temporarily fixing resin film was 30 μm. The following tests were conducted using the prepared temporary fixing resin films of Examples 1 to 9 and Comparative Examples 1 to 7, and the evaluation results are summarized in Tables 5 to 8.

[Low temperature stickiness test]
The temporarily fixing resin film with a support film was cut into a circular shape having a diameter 2 mm smaller than the diameter of the support. Thereafter, a temporary fixing resin film is laminated on the support using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd. at a pressure of 1 hPa or less, a pressure bonding temperature of 80 ° C., a lamination pressure of 0.5 MPa, and a holding time of 60 seconds. A support with a resin film was obtained. By visual observation of the support with the temporarily fixing resin film, a sample in which peeling of the temporarily fixing resin film was not observed was evaluated as “◯”, and a sample in which peeling was observed was evaluated as “×”. As the support, a silicon wafer was used for mechanical peeling, and a glass support was used for laser peeling.

[Chip pressure bonding test]
Flip chip bonder manufactured by Shinkawa Co., Ltd. so that the back surface of the semiconductor chip processed to 10 mm × 10 mm and 150 μm thickness was pasted to the temporarily fixing resin film for the sample evaluated as “◯” in the low temperature sticking property test. The semiconductor chip was pressure-bonded to the support with a temporary fixing resin film at a pressure of 0.05 MPa, a pressure of 80 ° C., and a pressure of 10 seconds. Then, after hold | maintaining for 30 minutes in the oven set to 110 degreeC, it hold | maintained for 1 hour in the oven set to 170 degreeC, and the semiconductor chip mounting sample was obtained. The semiconductor chip mounting sample was observed visually and under a microscope, and a sample in which peeling or misalignment of the semiconductor chip did not occur was evaluated as “◯”, and a sample in which the semiconductor chip delamination or misalignment occurred was evaluated as “x”.

[Sealing resistance test]
In the chip pressability test, the sample that was evaluated as “◯” was 8 inches in size with a sealing material (CEL-9750ZHF10AKLC1) on the semiconductor chip mounting surface using a compression sealing facility (WCM-300MS) manufactured by Apic Yamada Co., Ltd. Compression sealed. Sealing was performed under conditions of a sealing temperature of 140 ° C., a sealing pressure of 4.8 MPa, and a sealing time of 10 minutes. Next, the sealing material was heat-cured in an oven at 170 ° C. for 5 hours to obtain a sealed sample. Samples where melting of temporary fixing film (flow of temporary fixing material), chip misalignment, etc. did not occur after curing, “○”, samples where melting of temporary fixing film (flow of temporary fixing material), chip misalignment, etc. occurred Was evaluated as “×”.

[Back grinding test]
In the sealing resistance test, the surface of the sealing body was ground by using a fully automatic grinder polisher (DGP-8761, manufactured by DISCO Corporation) for the sealing body sample whose evaluation was “◯”. For the wheel, 1 axis: GF01-SDC320-BT300-50, 2 axis: IF-01-1-4 / 6-B · K09, 3 axis: DPEG-GA0001 were used. The chuck table rotation speed was 300 rpm, the wheel rotation speed was 1 axis: 3,200 rpm, 2 axis: 3,400 rpm, 3 axis: 1,400 rpm, and grinding was performed by a cross-feed method. The encapsulant sample was ground until it became 192 μm thick on one axis and then ground until it became 152 μm thick on two axes until it became 150 μm thick on three axes to obtain a device-formed body. A sample in which cracking or the like did not occur at the end of grinding was evaluated as “◯”, and a sample in which cracking or the like occurred was evaluated as “x”. In addition, about the comparative example 6, since the result of the sealing resistance test was "x", this test and the following tests were not performed.

[Heat resistance test]
In the back grind test, the state of the temporarily fixed resin film was confirmed using an ultrasonic microscope (SAM, Insight-300, manufactured by Insight Co., Ltd.) for the sample having an evaluation of “◯”. Thereafter, the sample was left in an oven set at 200 ° C. for 2 hours, and further left in an oven set at 260 ° C. for 20 minutes. Subsequently, the state of the temporarily fixing resin film was confirmed again using SAM, and a sample in which peeling of the temporarily fixing resin film did not occur even when left in the oven was “◯”, and a sample in which peeling occurred was “×”. ".

[Peelability test from support]
When the peeling method is “mechanical”, insert a pair of tweezers with a sharp tip between the support and the temporary fixing resin film for the sample that was evaluated as “◯” in the heat resistance test. I moved the tweezers along. At this time, the sample in which the support could be peeled without cracking the device forming body was evaluated as “◯”, and the sample that could not be peeled was evaluated as “x”.

  When the peeling method is “laser”, in the heat resistance test, for the sample evaluated as “◯”, from the light transmissive support side, the laser output is 10 W, the frequency is 30 kHz, the laser scan speed is 4000 m / s, and the laser scan width. Radiation energy by a YAG laser that generates light having a wavelength of 1064 nm was irradiated under the condition of 0.3 mm. Thereafter, the light-transmitting support was manually peeled from the temporarily fixing resin film. At this time, the sample in which the support could be peeled without cracking the device forming body was evaluated as “◯”, and the sample that could not be peeled was evaluated as “x”.

[Peelability test from device formed body]
About the sample which evaluation was "(circle)" in the peelability test from a support body, the edge part of the resin film for temporary fixing stuck on the device formation body was lifted with tweezers. At this time, the sample which could peel the resin film for temporary fixing from a device formation body was evaluated as "(circle)", and the sample which was not able to peel was evaluated as "x". For Comparative Example 5, the result of the peelability test from the support was “x”, so this test was not performed.

The detail of each component in Tables 1-4 is as follows.
HTR-860P-3CSP: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 800,000 by GPC, 3% by mass of glycidyl methacrylate, and Tg of 12 ° C.
HTR-280-CHN: Acrylic rubber (manufactured by Nagase ChemteX Corporation) having a weight average molecular weight of 900,000 by GPC, acrylic acid 8% by mass, and Tg-29 ° C.
TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Co., Ltd.)
SH3773M: polyether-modified silicone compound (manufactured by Dow Corning Toray)
YDCN-700-10: Cresol novolac type polyfunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
XLC-LL: Phenol aralkyl resin (Mitsui Chemicals)
FP Black C1115: Carbon black paste (Nv. 30%, particle size: 300 to 500 nm) (manufactured by Sanyo Dye Co., Ltd.)
2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)

DESCRIPTION OF SYMBOLS 100 ... Resin film sheet for temporarily fixing, 200 ... Resin film film for temporarily fixing, 10 ... Support film, 20 ... Resin film for temporarily fixing, 30 ... Protective film, 1 ... Support body, 21 ... Temporary fixing material layer, 3 ... Semiconductor chip, 3a ... semiconductor chip surface, 4 ... sealed body, 41, 42 ... sealed semiconductor chip, 5 ... rewiring, 6 ... bump, 7 ... device formation, 8 ... radiant energy, 9 ... semiconductor element .

Claims (14)

  A resin composition for temporary fixing, which contains a thermoplastic resin and a silicone compound and is used for temporarily fixing a semiconductor chip and a sealing body for sealing the semiconductor chip.   The resin composition for temporary fixing according to claim 1, wherein the thermoplastic resin is a (meth) acrylic copolymer having a reactive group.   The resin composition for temporary fixing according to claim 1 or 2, wherein the silicone compound is a silicone-modified alkyd resin.   The resin composition for temporary fixing according to any one of claims 1 to 3, further comprising a curing accelerator.   The resin composition for temporary fixing according to any one of claims 1 to 4, further comprising a thermosetting resin.   The resin composition for temporary fixing according to any one of claims 1 to 5, further comprising a photothermal conversion material.   The resin composition for temporary fixing according to claim 6, wherein the photothermal conversion material is carbon black.   A temporarily fixing resin film formed by forming the temporarily fixing resin composition according to any one of claims 1 to 7 into a film shape.   A temporarily fixing resin film sheet comprising: a supporting film having releasability; and the temporarily fixing resin film according to claim 8 provided on the supporting film. On the support, a first step of providing a temporary fixing material layer formed from the temporary fixing resin composition according to any one of claims 1 to 7,
A second step of disposing a semiconductor chip on the temporary fixing material layer;
Providing a sealing body covering the semiconductor chip, and forming a semiconductor chip sealing body having a semiconductor chip and a sealing body;
A fourth step of grinding the semiconductor chip sealing material so that a surface of the semiconductor chip opposite to the support is exposed;
A fifth step of forming wiring on the exposed surface of the semiconductor chip;
A sixth step of peeling the temporary fixing material layer from the semiconductor chip encapsulated material that has undergone the fourth step and the fifth step;
A method for manufacturing a semiconductor device comprising:   The manufacturing method according to claim 10, wherein in the first step, the temporary fixing material layer is formed by pasting the temporary fixing resin film according to claim 8 on the support.   The manufacturing method according to claim 10 or 11, wherein the support is a light-transmitting support.   The manufacturing method according to claim 12, wherein the sixth step peels the temporary fixing material layer from the semiconductor chip sealing object after irradiating the temporary fixing material layer with radiant energy from the light-transmitting support side. .   The resin composition for temporary fixing according to claim 13, wherein the radiant energy includes light having a wavelength of 1064 nm generated by a YAG laser.

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