JP2015065658A - Semiconductor device and display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a drive circuit of a display device, which is composed of one conductivity type TFT and which can normally obtain an amplitude of an output signal.SOLUTION: In TFTs 101, 104, when pulses are input and the TFTs are turned on and potential of a node α rises and subsequently reaches VDD-VthN (threshold value), the TFTs 101, 104 are subjected to a floating state and a TFT 105 is turned on and potential of an output node 4 rises with the increase of a clock signal 1 to Hi. On the other hand, potential of a gate electrode of the TFT 105 further rises with the potential rise of the output node 4 due to the operation of capacitance 107 to reach higher potential than VDD+VthN. Accordingly, potential of the output node 4 rises to VDD without causing voltage drop by the threshold value of the TFT 105. Subsequently, outputs in the next stage are input to TFTs 102, 103 and the TFTs 102, 103 are turned on, and potential of the node α drops and the TFT 105 is turned off. At the same time, a TFT 106 is turned on and potential of an output node becomes Lo.

Description

The present invention relates to a pulse output circuit, a shift register, and a display device. Note that in this specification, a display device includes a liquid crystal display device using a liquid crystal element as a pixel and a self-light emitting display device using a self-light emitting element such as an electroluminescence (EL) element. The driving circuit of the display device refers to a circuit that inputs a video signal to a pixel arranged in the display device and performs processing for displaying a video, a pulse output circuit including a shift register, an inverter, and the like, An amplifier circuit including an amplifier is included.

In recent years, a display device in which a semiconductor thin film is formed over an insulator, particularly a glass substrate, in particular, an active matrix display device using a thin film transistor (hereinafter referred to as TFT) has been widely used. An active matrix display device using TFTs has hundreds of thousands to millions of pixels arranged in a matrix, and displays the image by controlling the charge of each pixel by the TFT arranged in each pixel. It is carried out.

Furthermore, as a recent technology, in addition to the pixel TFT constituting the pixel, TF is provided in the peripheral region of the pixel portion.
A technology related to polysilicon TFTs that simultaneously form a drive circuit using T has been developed, greatly contributing to downsizing and low power consumption of the device. The display device has become an indispensable device for the display unit and the like.

In general, a CMOS circuit in which an N-channel TFT and a P-channel TFT are combined is generally used as a circuit constituting a driving circuit of a display device.
Here, a shift register is taken as an example of a CMOS circuit that is generally used conventionally. FIG. 11A is an example of a conventionally used shift register, and a portion surrounded by a dotted frame 1100 is a circuit that outputs a pulse for one stage. FIG. 11A shows three stages extracted. The circuit for one stage includes clocked inverters 1101, 1103,
And an inverter 1102. FIG. 11B shows a detailed circuit structure. In FIG. 11B, a clocked inverter 1101 is constituted by TFTs 1104 to 1107, an inverter 1102 is constituted by TFTs 1108 and 1109, and a clocked inverter 1103 is constituted by TFTs 1110 to 1113.

The TFT constituting the circuit has three electrodes, a gate electrode, a source electrode, and a drain electrode.
In general, in a CMOS circuit, an N-channel TFT uses a lower potential as a source electrode and a higher potential as a drain electrode, and in a P-channel type, a higher potential serves as a source electrode and a lower potential. TFT is often used as the drain electrode in this specification.
In order to avoid confusion, the source electrode and the drain electrode are described as an input electrode and the other as an output electrode.

The operation of the circuit will be described. As for the operation of the TFT, a potential is applied to the gate electrode to form a channel between the impurity regions, and the conductive state is ON. The channel in the impurity region disappears and the non-conductive state is OFF. write.

Reference is made to the timing charts shown in FIGS. 11A and 11B and FIG. TF
A clock signal (hereinafter referred to as CK) and a clock inversion signal (hereinafter referred to as CKB) are input to T1107 and 1104, respectively. A start pulse (hereinafter referred to as SP) is input to the TFTs 1105 and 1106. When CK is a Hi potential, CKB is a Lo potential, and SP is a Hi potential, the TFTs 1106 and 1107 are turned on, and the Lo potential is output and the TFTs 1108 and 110 are output.
9 is input to the inverter composed of 9 and inverted and output to the output node (SRout1).
Potential is output. After that, when SP is at the Hi potential and CK is at the Lo potential and CKB is at the Hi potential, the holding operation is performed in the loop constituted by the inverter 1102 and the clocked inverter 1103. Therefore, the Hi potential continues to be output to the output node.
Next, when CK becomes Hi potential and CKB becomes Lo potential, the clocked inverter 1101 performs writing operation again. At this time, since the SP is already at the Lo potential, the Lo potential is output to the output node. Thereafter, when CK becomes the Lo potential and CKB becomes the Hi potential, the holding operation is performed again, and the Lo potential at the output node at this time is held in the loop formed by the inverter 1102 and the clocked inverter 1103.

The above is the operation for one stage. In the next stage, the connections of CK and CKB are reversed, and the same operation is performed in the state where the polarity of the clock signal is reversed. This is repeated alternately, and thereafter, similarly, sampling pulses are sequentially output as shown in FIG.

As a feature of the CMOS circuit, current flows only at the moment when the logic changes (from the Hi potential to the Lo potential or from the Lo potential to the Hi potential), and no current flows during the holding of a certain logic (actually, it is very small) (There is a leakage current), so that the current consumption in the entire circuit can be kept low.

By the way, the demand for display devices using liquid crystal and self-luminous elements is the downsizing of mobile electronic devices.
Although the demand is rapidly increasing with the weight reduction, it is difficult to keep the manufacturing cost low enough from the viewpoint of yield and the like. It is easily predicted that future demand will increase more rapidly, and it is therefore desirable to be able to supply display devices at a lower cost.

As a method for manufacturing a driver circuit over an insulator, an active layer, a plurality of photomasks,
It is common to create patterns by exposing and etching patterns such as wiring, but since the large number of processes at this time directly affects the manufacturing cost, it is possible to manufacture with as few processes as possible. Ideal to do. Therefore, if a driving circuit that has been configured by a conventional CMOS circuit can be configured by using only an N-channel type or P-channel type TFT, a part of the ion doping process is omitted. In addition, the number of photomasks can be reduced.

(Problems of the technology prior to the present invention)
FIG. 9A shows an example of a CMOS inverter (I) that is generally used conventionally and inverters (II) and (III) that are configured using TFTs having only one polarity. (II) is TFT
A load type inverter (III) is a resistance load type inverter. Each operation will be described below.

FIG. 9B shows the waveform of a signal input to the inverter. Here, the input signal amplitude is between VDD and VSS (VSS <VDD). Here, VSS = 0 [V] is considered.

The circuit operation will be described. For clarity and simplicity of explanation, N constituting the circuit
The threshold voltage of the type TFT is uniform (VthN) assuming that there is no variation. Similarly, the P-type TFT is set to be uniform (VthP).

When a signal as shown in FIG. 9B is input to the CMOS inverter, the potential of the input signal becomes Hi.
At the potential, the P-type TFT 901 is turned off and the N-type TFT 902 is turned on, so that the potential of the output node becomes the Lo potential. Conversely, when the potential of the input signal is Lo, the P-type TFT
When 901 is turned on and the N-type TFT 902 is turned off, the potential of the output node becomes the Hi potential (FIG. 9C).

Next, the operation of the TFT load type inverter (II) will be described. Consider the case where a signal as shown in FIG. First, when the input signal is Lo potential, N-type TF
T904 is turned OFF. On the other hand, since the load TFT 903 always operates in saturation, the potential of the output node is raised in the Hi potential direction. On the other hand, when the input signal is at the Hi potential, the N-type TFT 904 is turned on. Here, the N-type TFT 90 is more than the current capability of the load TFT 903.
By keeping the current capability of 4 sufficiently high, the potential of the output node is lowered in the Lo potential direction.

Similarly, for the resistance load type inverter (III), the ON resistance value of the N type TFT 906 is
By making it sufficiently lower than the resistance value of the load resistor 905, when the input signal is at the Hi potential, the N-type TFT 906 is turned ON, and the output node is pulled down in the Lo potential direction. When the input signal is at the Lo potential, the N-type TFT 906 is turned off and the output node is pulled up in the Hi potential direction.

However, when using a TFT load type inverter or a resistance load type inverter, there are the following problems. FIG. 9D shows the output waveform of the TFT load type inverter.
When the output is Hi potential, the potential is lower than VDD by the amount indicated by 907. Load TFT
In 903, when the terminal on the output node side is the source and the terminal on the power supply VDD side is the drain, the gate electrode and the drain region are connected, so the potential of the gate electrode at this time is VD
D. Further, since the condition for turning on the load TFT is (the gate-source voltage of TFT 903> VthN), the potential of the output node is at most (VDD−Vt).
Only rises to hN). That is, 907 is equal to VthN. Furthermore, load TFT9
Depending on the ratio of the current capability of 03 and N-type TFT 904, when the output potential is Lo potential, 908
The potential becomes higher than VSS by the amount indicated by. In order to make this sufficiently close to VSS, it is necessary to sufficiently increase the current capability of the N-type TFT 904 with respect to the load TFT 903. Similarly, FIG. 9E shows the output waveform of the resistance load type inverter.
Depending on the ratio between the resistance value of 05 and the ON resistance of the N-type TFT 906, the potential increases by the amount indicated by 909. In other words, when an inverter configured using only one polarity TFT shown here is used, the amplitude of the output signal is attenuated with respect to the amplitude of the input signal.

In the case of a circuit configured to input the output pulse of the previous stage to the next stage, such as a shift register, the amplitude depends on the threshold value of the TFT each time the m-th stage → m + 1 stage → m + 2 stage. Attenuation occurs and the circuit does not function.

The present invention has been made in view of the above problems, and can be manufactured at a low cost by reducing the manufacturing process by using a TFT having only one polarity, and can provide an output without amplitude attenuation. An object is to provide a pulse output circuit and a shift register which can be obtained.

In the TFT load type inverter shown in FIG. 9 (A) (II), the conditions for the output signal amplitude to normally take VDD-VSS are considered. First, in the circuit as shown in FIG. 10A, when the potential of the output signal becomes the Lo potential, in order to make the potential sufficiently close to VSS, the resistance value between the power supply VDD and the output node is It is sufficient that the resistance value between the power supply VSS and the output node is sufficiently low. That is, the period during which the N-type TFT 1002 is ON,
The type TFT 1001 only needs to be OFF. Second, when the potential of the output signal becomes the Hi potential, the absolute value of the gate-source voltage of the N-type TFT 1001 only needs to always exceed VthN so that the potential becomes equal to VDD. In other words, the Hi potential of the output node is VDD
In order to satisfy the following condition, the potential of the gate electrode of the N-type TFT 101 is (VDD + VthN)
Need to be higher than. Since there are only two types of power supplies to the circuit, VDD and VSS, the conventional method cannot satisfy this condition unless there is a third power supply having a potential higher than VDD.

Therefore, the following measures are taken in the present invention. As shown in FIG. 10 (B), N-type TF
A capacitor 1003 is provided between the gate and the source of T1001. When the potential of the output node is raised when the gate electrode of the N-type TFT 1001 is in a floating state with a certain potential, the N-type TFT 10 is increased in accordance with the increase in potential of the output node due to capacitive coupling by the capacitor 1003.
The potential of the 01 gate electrode is also raised.
By utilizing this effect, the potential of the gate electrode of the N-type TFT 1001 can be made higher than VDD (more precisely, higher than VDD + VthN). Therefore, the potential of the output node can be sufficiently raised to VDD.

Note that as the capacitor 1003 shown in FIG. 10B, a parasitic capacitance between the gate and the source of the TFT 1001 may be used, or a capacitor portion may be actually manufactured. In the case where the capacitor portion is manufactured independently, it is simple and desirable to use any two of the active layer, the gate material, and the wiring material, and the insulating layer is sandwiched between them. You may produce using another material.

According to the present invention, a driver circuit and a pixel portion of a display device can be formed using only one-conductivity type TFT, and the manufacturing cost of the display device can be reduced.
This contributes to an improvement in yield and enables a display device to be supplied at a lower cost.

FIG. 3 is a diagram showing one embodiment of a pulse output circuit of the present invention. FIG. 2 is a timing chart for driving the pulse output circuit shown in FIG. 1. The figure which shows the shift register which added the scanning direction switching function which is one Example of the pulse output circuit of this invention. FIG. 11 illustrates a configuration example of a source signal line driver circuit in a display device provided by the present invention. FIG. 4 is a detailed diagram of a circuit configuration of a level shifter in the display device provided by the present invention. FIG. 4 is a detailed diagram of a circuit configuration of a buffer and a sampling switch in a display device provided by the present invention. The figure which shows the shift register which simplified the structure which is one Example of this invention. FIG. 11 illustrates an example of an electronic device to which the present invention can be applied. The figure which shows the structure of a conventional CMOS inverter and a load type inverter, and the waveform of each input-output signal. 4A and 4B illustrate an operation principle of a pulse output circuit of the present invention. The figure which shows the circuit structure and timing chart of a conventional shift register. The figure which shows the whole external appearance of the display apparatus provided by this invention. The figure which shows operation | movement of the shift register shown in embodiment of this invention by the difference in the pulse width of a clock signal. The figure which shows the shift register which added the input of the reset signal. The figure which shows the shift register which added the input of the reset signal. The figure which shows the circuit structure by the transistor of the conductivity type different from embodiment. FIG. 17 is a diagram showing a timing chart for driving the shift register shown in FIG. 16.

FIG. 1 shows a shift register to which a bootstrap method is applied, which is an embodiment of the pulse output circuit of the present invention. In the block diagram shown in FIG. 1A, a block indicated by 100 is a pulse output circuit that outputs a sampling pulse for one stage, and the shift register of FIG. Has been. Clock signal (hereinafter referred to as CK), clock inversion signal (hereinafter referred to as CKB)
A start pulse (hereinafter referred to as SP) is input. FIG. 1B shows a detailed circuit configuration of the block 100. In FIG. 1B, block 110 is a first amplitude compensation circuit, and block 120 is a second amplitude compensation circuit. A further detailed view is shown in FIG. FIG.
), The TFT 101 connected to the power source VDD and the TFT 1 connected to the power source VSS.
02 is used to form a first amplitude compensation circuit, and a TFT 103 connected to the power supply VDD and a TFT 104 connected to the power supply VSS are used to form a second amplitude compensation circuit.

The operation of the circuit will be described with reference to the circuit diagram shown in FIG. 1 and the timing chart shown in FIG. In a certain m-th stage (1 <m ≦ n) pulse output circuit, TFTs 101, 10
The gate electrode No. 4 receives the output pulse of the (m−1) th stage (m = 1, that is, SP is input in the first stage), and becomes the Hi potential, and the TFTs 101 and 104 are turned on (FIG. 2). 2
01). As a result, the potential of the node α is raised to the VDD side (see 2022 in FIG. 220), and when the potential becomes VDD−VthN, the TFT 101 is turned off and enters a floating state. Therefore, the TFT 105 is turned on. On the other hand, since no pulse is input to the gate electrodes of the TFTs 102 and 103 at this time, and the Lo potential remains, it is turned off. Therefore, the potential of the gate electrode of the TFT 106 is the Lo potential and is turned off.
As the CK inputted from one end of the impurity region 05, that is, the first input signal line (1) becomes the Hi potential, the potential of the output node is raised to the VDD side (see 203 in FIG. 220).
.

Here, since the capacitor 107 is provided between the gate of the TFT 105 and the output node, and the node α, that is, the gate electrode of the TFT 105 is now in a floating state, the boot increases as the potential of the output node rises. The potential of the gate electrode of the TFT 105 is further raised from VDD-VthN by the strap. Accordingly, the potential of the gate electrode of the TFT 105 is higher than VDD + VthN (see FIG. 2202). Therefore, the potential of the output node completely rises to VDD without being lowered by the threshold value of the TFT 105 (see FIG. 2203).

Similarly, in the (m + 1) th stage, a pulse is output according to CKB (FIG. 2204).
reference). The (m + 1) th stage output pulse is fed back to the mth stage and input to the gate electrodes of the TFTs 102 and 103. When the gate electrodes of the TFTs 102 and 103 are turned on with the Hi potential, the potential of the node α is lowered to the VSS side and the TFT 105 is turned off. At the same time T
The potential of the gate electrode of the FT 106 is turned ON as the Hi potential, and the potential of the m-th output node becomes the Lo potential.

Thereafter, pulses having an amplitude between VDD and VSS are sequentially output by the same operation up to the final stage. In the final stage, since there is no next-stage output pulse to be input from the third input signal line in FIG. 1C, CK continues to be output as it is. Therefore, since the output of the final stage cannot be used as a sampling pulse, when the number of output stages of the sampling pulse actually required is n, a surplus including the final stage is provided by providing more than n stages of shift registers. The steps may be treated as dummy steps. However, the output of the last stage needs to be stopped by some method until the next horizontal period, but in the circuit shown in FIG. 1, the start pulse input to the first stage is the third pulse of the last stage. This is also used as a feedback pulse by being input to the input signal line, and the final stage pulse output is stopped immediately before the next horizontal period.

The configuration of the amplitude compensation circuit shown in the present embodiment is an example, and other configurations may be used.

As another method, as shown in FIGS. 14A and 14B, a reset signal is prepared and inputted to the third input signal line 1401 at the final stage during the retrace period, thereby outputting a pulse. , Or as shown in FIGS. 15A and 15B, reset TFTs 1508, 1
When a reset signal is input using 509, the gate electrode potential of the TFT 1505 is turned off as the Lo potential, and the gate electrode potential of the TFT 1506 is turned on as the Hi potential.
By doing so, a method of fixing the output of all stages to the Lo potential can be mentioned. At this time, the input timing of the reset signal may be the same as that in the timing chart illustrated in FIG. In FIG. 15A, the third stage indicated by * in the last-stage pulse output circuit.
Input signal line is connected to the power supply potential on the VSS side, and TFTs 1502 and 1503 are always OF.
It is desirable to make it F.

Further, although not particularly shown, in the case of the circuit shown in FIG. 15, the reset signal is first input before the circuit starts outputting the sampling pulse, that is, immediately after the power is turned on. Determine the node potential (in the case of the circuit of FIG.
Potential). In the case of a dynamic circuit, such an operation is effective for stably operating the circuit.

With the above operation, even in a circuit configured using only one conductivity type TFT,
An output signal having a normal amplitude with respect to the input signal can be obtained without causing amplitude attenuation due to the influence of the threshold value of the TFT connected to the power source on the high potential side. Further, it can be said that the circuit shown in the present embodiment is not a complicated configuration even when compared with a conventional CMOS circuit.

  Examples of the present invention will be described below.

FIG. 3 shows an example in which a scan direction inversion function is added to the shift register shown in the embodiment of the present invention. In FIG. 3A, compared with the circuit shown in FIG. 1A, a scanning direction switching signal (LR) and a scanning direction switching inversion signal (LRB) are added.

FIG. 3B shows in detail the structure of the pulse output circuit for one stage indicated by the block 300 in FIG. The pulse output circuit body composed of the TFTs 301 to 306 and the capacitor 307 is the same as that shown in FIG. 1B, but the second input signal line (
2) A scanning direction switching circuit indicated by a dotted frame 350 is provided between the third input signal line (3) and the pulse output circuit body. The scanning direction switching circuit shown in this embodiment is the TFT 3
08 to 311 and functions as an analog switch.

As shown in FIG. 3B, the gate electrodes of the TFT 301 and the TFT 304 are TFT 3
The second input signal line (2) is connected via 08, and the third input signal line (3) is connected via TFT 310. The gate electrodes of TFT 302 and TFT 303 are TFT 3
The second input signal line (2) is connected via 09 and the third input signal line (3) is connected via TFT 311. The LR signal is input to the gate electrodes of the TFT 308 and the TFT 310, and the LRB signal is input to the gate electrodes of the TFT 309 and the TFT 311. LR and LRB take the Hi potential or the Lo potential exclusively, and therefore the scanning direction switching circuit of this embodiment takes the following two states.

First, when LR is Hi potential and LRB is Lo potential, the TFT 308 and TFT 310 are turned on, the second input signal line (2) and the gate electrodes of the TFT 301 and TFT 304 are conducted, and the third input signal line (3) and the gate electrodes of the TFT 302 and the TFT 303 are conducted. Second, when LR is Lo potential and LRB is Hi potential, TFT 309 and TFT 3
11 is turned on, the second input signal line (2) and the gate electrodes of the TFT 302 and TFT 303 are conducted, and the third input signal line (3) and the gate electrodes of the TFT 301 and TFT 304 are conducted.

That is, when a signal is input to LR and becomes Hi potential, and LRB is Lo potential, the output of the sampling pulse is in the order of the first stage to the second stage to the last stage, and conversely, LR is the Lo potential.
When a signal is input to the LRB and becomes Hi potential, the output of the sampling pulse is the last stage.
..The order from the second stage to the first stage. In the present invention, these functions can be easily added by adding a simple circuit. Here, this embodiment is a case where the circuit is configured using an N-channel TFT, and in the case where the circuit is configured using a P-channel TFT, a state in which a signal is input to the LR is a Lo potential. In the case of Hi potential, no signal is input.

Note that the scanning direction switching circuit shown in this embodiment is merely an example, and a similar function may be added depending on other configurations.

In this embodiment, an example in which a display device is manufactured using TFTs having only one polarity will be described.

FIG. 12 is a schematic diagram of the display device. A source signal line driver circuit 120 is formed on the substrate 1200.
1. The gate signal line driver circuit 1202 and the pixel portion 1203 are formed by integral formation.
In the pixel portion, a portion surrounded by a dotted line frame 1210 is one pixel. In the example of FIG. 12, a pixel of a liquid crystal display device is shown, and the charge applied to one electrode of the liquid crystal element is controlled by one TFT (hereinafter referred to as a pixel TFT). Source signal line drive circuit 120
1. The signal input to the gate signal line drive circuit 1202 is a flexible printed circuit board (Flexib).
le Print Circuit (FPC) 1204 and supplied from the outside.

FIG. 4 is a diagram showing an overall configuration of the source signal line driver circuit 1201 in the display device shown in FIG. The source signal line driving circuit includes a clock signal level shifter 401, a start pulse level shifter 402, a scanning direction switching type shift register 403, and a buffer 4.
04, which has a sampling switch 405, and an externally input signal is a clock signal (CK) or a clock inversion signal (CKB).
Start pulse (SP), scanning direction switching signal (LR, LRB), analog video signal (V
video1) to video12). Among them, CK, CKB, and SP are subjected to amplitude conversion by a level shifter immediately after being input as a low voltage amplitude signal from the outside, and are input to the drive circuit as a high voltage amplitude signal. The sampling pulse output from the one-stage shift register simultaneously samples analog video signals for 12 columns of source signal lines by driving the sampling switch 405.

FIG. 5A shows the (LS1) configuration of the clock signal level shifter.
This is a one-input type level shifter circuit arranged in parallel (Stage 1) and a buffer stage (St.
The two inputs (age2 to Stage4) are configured to alternately input outputs from each other.

The operation of the circuit will be described. Note that the power supply potential used in the figure is VDD1, VDD
2 and 3 potentials of VSS, and VSS <VDD1 <VDD2. In this embodiment, VSS =
0 [V], VDD1 = 5 [V], and VDD2 = 16 [V]. In the figure, 501, 503,
Although the TFTs denoted by reference numerals 506 and 508 have a W gate structure, these TFTs may have a single gate structure or a multi-gate structure having three or more gate electrodes. Other TFTs are not limited by the number of gate electrodes.

CK having an amplitude of VDD1-VSS is input from the signal input unit 1 (1). When CK is Hi potential, the TFTs 502 and 504 are turned on, and the potential of the gate electrode of the TFT 503 is L.
It becomes o potential and turns OFF. Therefore, the Lo potential is output to the output node α. CK is Lo
When the potential is applied, the TFTs 502 and 504 are turned off. Therefore, the TFT 50 operating in saturation
1, the gate electrode potential of the TFT 503 is raised to the VDD2 side, and the potential is V
When DD2-VthN is reached, the TFT 501 is turned off, and the gate electrode of the TFT 503 is in a floating state. As a result, the TFT 503 is turned ON, and the potential of the output node α is raised to the VDD2 side. Here, due to the action of the capacitor 505, the potential of the gate electrode of the TFT 503 which is in a floating state is raised as the potential of the output node α increases, and the potential is VD
By taking a potential higher than D2 and the potential exceeding VDD + VthN, the Hi potential of the output node α becomes equal to VDD2. Therefore, the Lo potential of the output signal is VSS, Hi
The potential becomes VDD2, and the amplitude conversion is completed.

On the other hand, from the signal input unit 2 (2), CKB having the amplitude of VDD1-VSS as with CK.
Is input, and amplitude conversion is performed by a level shifter configured by the TFTs 506 to 509 and the capacitor 510, and a signal having an amplitude of VDD2-VSS is output to the output node β. The signals output to the nodes α and β are opposite in polarity to the input CK and CKB.

The level shifter used in the display device of this embodiment is provided with a buffer stage in consideration of the load on the pulse after amplitude conversion (Stage 2 to Stage 4). The inverter circuit constituting this buffer stage is a two-input type and requires an input signal and its inverted signal. FIG.
Then, in the buffer circuit shown in Stage 2, the signal input to the gate electrode of the TFT 511 and the signal input to the gate electrode of the TFT 512 require signals having reversed polarities. The same applies to the TFTs 516 and 517. Therefore, here, since CK and CKB are mutual polarity inversion signals, the above-described level shifter output is used as an inverting input of the mutual signals.

The operation of the inverter circuit constituting the buffer stage will be described. Here, TFT
Although only the operation in the inverter circuit composed of 511 to 514 and the capacitor 515 will be described in detail, the operation is the same for other inverter circuits.

When the signal input to the gate electrode of the TFT 511 is Hi potential, the TFT 511 is turned ON,
The potential of the gate electrode of the TFT 513 is raised to the VDD2 side, and the potential is VDD2-V.
When thN is reached, the TFT 511 is turned OFF, and the gate electrode of the TFT 513 is in a floating state. On the other hand, the Lo potential is input to the gate electrodes of the TFTs 512 and 514 and the TFTs are turned OFF. Subsequently, the TFT 513 is turned on, and the potential of the output node γ is raised to the VDD2 side. Here, like the above-described shift register and level shifter, the potential of the gate electrode of the TFT 513 in a floating state is raised by the action of the capacitor 515, and VDD2 + VthN
Take higher potential. Therefore, the Hi potential of the output node γ becomes equal to VDD2.

On the other hand, when the signal input to the gate electrode of the TFT 511 is at the Lo potential, the TFT 511 is turned on.
FF is applied, and a high potential is input to the gate electrodes of the TFTs 512 and 514 to turn them on. Therefore, the potential of the gate electrode of the TFT 513 becomes the Lo potential, and the potential of the output node γ becomes the Lo potential.

The inverter circuit constituted by the TFTs 516 to 519 and the capacitor 520 also operates in the same manner as described above, and a pulse is output to the output node δ. The output node δ outputs a pulse whose polarity is inverted from that of the signal output to the output node γ.

Thereafter, the pulse is finally output from the signal output unit 3 (3) and the signal output unit 4 (4) by the same operation in Stage3 and Stage4. In FIG. 5A, when the output of Stage2 is input to Stage3, from Stage1 to Stage
Contrary to the case of 2, the input is made so that the logic is not inverted, but it is only necessary to connect in accordance with the pulse logic required by the user, and there is a restriction on the connection between stages in particular. Absent.

FIG. 5B shows the state of amplitude conversion of the clock signal (CK).
The amplitude of the input signal is 0 to 5 [V], and the amplitude of the output signal is 0 to 16 [V].

FIG. 5C shows a level shifter (LS2) for the start pulse. In the case of a start pulse, since it does not have an inverted signal, it is a 1-input type level shifter circuit (Stag
e1) was used, followed by a one-input inverter circuit (Stage 2) and a two-input inverter circuit (Stage 3). Since the circuit operation is the same as that described in the section of the level shifter for clock signals, description thereof is omitted here.

FIG. 5D shows the state of amplitude conversion of the start pulse (SP). The amplitude of the input signal is 5 [V], and the amplitude of the output signal is 16 [V].

FIG. 6A shows the configuration of the buffer (Buf.), And a one-input inverter circuit (S
stage 1) and a three-stage two-input inverter circuit (Stage2 to Stage4). The operation of the one-input inverter circuit is the same as that of the level shifter circuit except that the amplitude of the input pulse is VDD2-VSS and there is no amplitude conversion between input and output pulses.

In the operation of the 2-input inverter circuit, an output signal from the previous stage is input to the TFT 607 as an input signal, and an input signal to the previous stage inverter is used as an inverted signal of the input signal to the TFT 606. The TFT 606 and the TFT 607 operate exclusively, so that TF
The potential of the gate electrode of T608 is controlled in the same manner as the level shifter circuit described above. In subsequent inverter circuits, the input signal operates using the output signal from the previous stage, and the inverted signal of the input signal operates using the input signal to the previous stage.

FIG. 6B shows the configuration of the sampling switch. A sampling pulse is input from the signal input unit 25 (25), and twelve TFTs 621 arranged in parallel are simultaneously controlled. Analog video signals are input from the signal input units 1 (1) to 12 (12), and the input of the sampling pulse serves to write the potential of the video signal at that time to the source signal line.

Among the circuits constituting the drive circuit shown in this embodiment, the inverter circuit and the level shifter circuit are the same as those described in the invention filed in Japanese Patent Application No. 2001-133431 by the same inventors. Is used.

In the display device shown in this embodiment, a driver circuit constituting the entire display device including a pixel portion is manufactured using only a unipolar TFT (for example, an N-type TFT) having the same polarity as the pixel TFT. Yes. Thereby, it is possible to omit the ion doping step of imparting P-type to the semiconductor layer, which can contribute to reduction of manufacturing cost, improvement of yield, and the like.

Although the polarity of the TFT constituting the display device of this embodiment is N-type, it is of course possible to configure the driving circuit and the pixel TFT using only the P-type TFT according to the present invention. In this case, it is noted that the ion doping step to be omitted is a step of imparting N-type to the semiconductor layer. The present invention can be applied not only to a liquid crystal display device but also to any device that is manufactured by integrally forming a drive circuit on an insulator.

In this embodiment, an example in which the configuration of the pulse output circuit shown in FIG. 1 in the embodiment is simplified will be described.

FIG. 7 shows the shift register of this embodiment. In FIG. 7A, a block 700 is a pulse output circuit that outputs a pulse for one stage, and the shift register in FIG. 7A includes an n-stage pulse output circuit. FIG. 7B shows a detailed circuit configuration. FIG.
The block diagram of the shift register shown in FIG. 7A and the shift register in FIG. 7A are the same, and the input signals are also the same. The difference of this embodiment is that the pulse output circuit is composed of four TFTs 701 to 704 and a capacitor 705 in FIG. 7B. In FIG. 7B, a block 710 is an amplitude compensation circuit. A further detailed view is shown in FIG. In FIG. 7C, the TFT 701 connected to the power supply VDD and the power supply VS.
An amplitude compensation circuit is configured using the TFT 702 connected to S.

The operation of the circuit will be described. In the m-th stage (1 <m ≦ n), the pulse output from the (m−1) -th stage is input to the gate electrode of the TFT 701 (when m = 1, that is, SP is input in the first stage). ), The potential of the gate electrode of the TFT 701 becomes Hi potential, and O
N. As a result, the potential of the node α is raised to the VDD side, and the potential becomes VDD−V
When thN is reached, the TFT 701 is turned OFF, and the node α is in a floating state, and the TFT 7
03 turns on. On the other hand, no pulse is input to the gate electrodes of the TFTs 702 and 704 at this time, and the potential remains at the Lo potential. Therefore, as one end of the impurity region of the TFT 703, that is, CK input from the first input signal line (1) becomes the Hi potential, the potential of the output node is raised to the VDD side.

Here, a capacitor 705 is provided between the gate of the TFT 703 and the output node. Further, since the node α, that is, the gate electrode of the TFT 703 is in a floating state, the boot potential increases as the potential of the output node increases. The potential of the gate electrode of the TFT 703 is further raised from VDD-VthN by the strap. As a result, the potential of the gate electrode of the TFT 703 is higher than VDD + VthN. Therefore, the potential of the output node is TFT7.
With the threshold of 03, the potential rises completely to VDD without lowering the potential.

Similarly, at the (m + 1) th stage, a pulse is output according to CKB. The output pulse of the (m + 1) th stage returns to the mth stage and is input to the gate electrodes of the TFTs 702 and 704. TF
When the gate electrodes of T702 and 704 are turned ON with the Hi potential, the potential of the node α is lowered to the VSS side, the TFT 703 is turned OFF, and the potential of the output node becomes the Lo potential.

Thereafter, pulses having an amplitude between VDD and VSS are sequentially output by the same operation up to the final stage. In the final stage, since there is no next-stage output pulse to be input from the third input signal line (3) in FIG. 7B, CK continues to be output as it is, but as in the embodiment, it can be treated as a dummy stage. There is no problem. In the present embodiment shown in FIG. 7, the final stage output pulse is stopped immediately before the next horizontal period by inputting the start pulse to the third input signal line of the final stage. As another method, by preparing a reset signal as described in the section of the embodiment and inputting it to the third input signal line at the final stage during the retrace period,
There are a method of stopping the pulse output, a method of inputting a reset signal so as to fix the output nodes of all stages to the Lo potential during the blanking period (same as in FIG. 15).

The pulse output circuit shown in this embodiment has a smaller number of elements than the pulse output circuit shown in the embodiment, and there are many portions that are in a floating state in a period in which there is no sampling pulse input / output. Therefore, it can be said that it is particularly suitable for parts with a high driving frequency. Therefore, in a display device, it is preferably used for a source signal line driver circuit or the like.

Please refer to FIG. In the shift register described in the embodiment of the present invention, Example 1, Example 3 and the like, as illustrated in FIG. The CKB with the polarity reversed is input. At this time,
Since the pulse width of the sampling pulse is equal to the pulse width of CK and CKB, the output thereof is as indicated by 1303-1307 in FIG. Reference numeral 1303 denotes a first stage sampling pulse, 1304 denotes a second stage sampling pulse, and hereinafter, 3 to 5 stage sampling pulses.

Here, CK and other input / output signals have a rise time when changing from the Lo potential to the Hi potential and a fall time when changing from the Hi potential to the Lo potential. In some cases, an overlap of pulses that should not appear ideally may occur. FIG.
In A), the sampling pulses 1303 to 1307 appear to have overlapping rising and falling periods between adjacent pulses.

In particular, in the case of a display device that displays an image by sampling an analog image signal, the image signal may be sampled at an incorrect timing due to the overlap of such adjacent sampling pulses, resulting in a decrease in display quality. It will be.

Therefore, in order to avoid such overlapping of sampling pulses, FIG.
As shown in FIG. 4, a difference is given to the pulse width of CK. In this case, the period 1308 of the Hi potential is L
It is slightly shorter than the period 1309 of the o potential. Similarly for CKB, the period of Hi potential is set to L
It is slightly shorter than the period of o potential. By doing so, there is no overlap between the rising period of CK and the falling period of CKB, or the falling period of CK and the rising period of CKB. It is possible to eliminate the overlap of the rising period and the falling period.

Here, FIG. 1 will be referred to again. The operation of the pulse output circuit shown in FIG.
A sampling pulse is output by outputting CK or CKB to the output node while 05 is ON. That is, CK or CKB is output as it is from when the potential at the node α starts to rise until the potential is pulled down to the Lo potential by the next sampling pulse. Therefore, if the rising period of CK and the falling period of CKB, or the falling period of CK and the rising period of CKB overlap, an incorrect pulse may be output before and after the sampling pulse.

In FIG. 13A, the preceding sampling pulse 1304 is input to the shift register to which the sampling pulse 1305 is output, and from that moment, CK or CKB (
At the stage where the sampling pulse 1305 is output, CK) appears as it is at the output node. FIG. 13 (B)
As shown in FIG. 4, an illegal pulse 1316 appears before the sampling pulse 1305 that is originally output. Therefore, as shown in this embodiment, these malfunctions can be avoided by modulating the pulse widths of CK and CKB.

In the embodiments and the examples so far, an example in which a circuit is configured using only N-channel TFTs has been described. However, the same applies to the case where only P-channel TFTs are used by replacing the level of the power supply potential. A circuit can be configured.

FIGS. 15A and 15B show examples of shift registers formed using only P-channel TFTs. With respect to the block diagram shown in FIG. 16A, the N-channel type T shown in FIG.
The configuration is the same as that of a shift register configured using only FT.
This is a pulse output circuit that outputs sampling pulses for stages. As shown in FIG. 16B, the power supply potential is reversed as a difference from a shift register including N-channel TFTs.

FIG. 17 shows a timing chart and output pulses. Since the operation of each part has been described with reference to FIGS. 1 and 2 in the embodiment, detailed description thereof is omitted here. The one shown in FIG. 2 is a form in which the Hi potential and the Lo potential are reversed.

The present invention can be applied to manufacture of display devices used in various electronic devices. Examples of such electronic devices include portable information terminals (electronic notebooks, mobile computers, mobile phones, etc.), video cameras, digital cameras, personal computers, televisions, mobile phones, and the like. An example of them is shown in FIG.

FIG. 8A illustrates a liquid crystal display (LCD), which includes a housing 3001, a support base 3002, a display portion 3003, and the like. The present invention can be applied to the display portion 3003.

FIG. 8B illustrates a video camera, which includes a main body 3011, a display portion 3012, and an audio input portion 301.
3, an operation switch 3014, a battery 3015, an image receiving unit 3016, and the like. The present invention can be applied to the display portion 3012.

FIG. 8C illustrates a laptop personal computer, which includes a main body 3021 and a housing 3022.
, A display unit 3023, a keyboard 3024, and the like. The present invention provides the display unit 30.
23 can be applied.

FIG. 8D illustrates a portable information terminal, which includes a main body 3031, a stylus 3032, and a display portion 303.
3, an operation button 3034, an external interface 3035, and the like. The present invention can be applied to the display portion 3033.

FIG. 8E illustrates a sound reproducing device, specifically an in-vehicle audio device.
, A display unit 3042, operation switches 3043 and 3044, and the like. The present invention can be applied to the display portion 3042. In this embodiment, the in-vehicle audio device is taken as an example, but it may be used for a portable or home audio device.

FIG. 8F illustrates a digital camera, which includes a main body 3051, a display portion (A) 3052, and an eyepiece portion 3.
053, an operation switch 3054, a display portion (B) 3055, a battery 3056, and the like. The present invention can be applied to the display portion (A) 3052 and the display portion (B) 3055.

FIG. 8G illustrates a mobile phone, which includes a main body 3061, an audio output unit 3062, and an audio input unit 306.
3, a display unit 3064, an operation switch 3065, an antenna 3066, and the like. The present invention can be applied to the display portion 3064.

It should be noted that the examples shown in this embodiment are just examples, and the present invention is not limited to these applications.

Claims (2)

A first transistor, a second transistor, a first circuit and a second circuit;
Each of the first and second transistors has the same conductivity type,
In the first transistor, the gate is electrically connected to the first circuit, one of the source and the drain is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to one of the source and the drain of the second transistor. And
In the semiconductor device, the gate of the second transistor is electrically connected to the second circuit, and the other of the source and the drain is electrically connected to the second wiring.   A display device using the pulse output circuit according to any one of claims 1 to 6.

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