JP2010141176A - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP2010141176A JP2010141176A JP2008316752A JP2008316752A JP2010141176A JP 2010141176 A JP2010141176 A JP 2010141176A JP 2008316752 A JP2008316752 A JP 2008316752A JP 2008316752 A JP2008316752 A JP 2008316752A JP 2010141176 A JP2010141176 A JP 2010141176A
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- metal
- seed metal
- wiring layer
- electrode
- forming
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Classifications
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Abstract
【解決手段】発光層を有する積層体を、その第1の面が透光性基板の第1の面に隣接するように形成する工程と、前記積層体の前記第1の面とは反対側の第2の面側に設けられたp側電極及びn側電極上に、第1及び第2の開口を有する絶縁膜を前記第2の面側に形成する工程と、前記絶縁膜と前記第1及び第2の開口とを覆うシード金属を形成する工程と、前記シード金属の上にp側金属配線層及びn側金属配線層をそれぞれ形成する工程と、前記p側金属配線層の上にp側金属ピラーを、前記n側金属配線層の上にn側金属ピラーを、それぞれ形成する工程と、前記p側金属配線層と前記n側金属配線層との間に露出した前記シード金属を除去し、p側シード金属とn側シード金属とに分離する工程と、前記シード金属を除去した空間の少なくとも一部に樹脂を形成する工程と、を備えたことを特徴とする発光装置の製造方法及び発光装置が提供される。
【選択図】図1
Description
しかしながら、この例では、発光素子チップを透明基板上に位置精度よく接着するための配線層や柱状電極を必要とし、小型化及び量産性要求を満たすのに十分であるとは言えない。
図1は、本発明の第1の実施形態にかかる発光装置の模式図である。すなわち、図1(a)は断面図、図1(b)は下面図、図1(c)は第1の変形例の断面図である。
積層体12は、発光層12eを含む上部層12aと、下部層12bと、を有し、露出している第1の面12cと、これとは反対側の第2の面12dと、を有している。なお、上部層12aは、例えばp型クラッド層、発光層12e、及びn型クラッド層を有している。また、下部層12bは、例えばn型とされ電流の横方向経路となる。但し、導電型はこれに限定されず、逆導電型であってもよい。
また、n側シード金属22b、n側銅配線層24b、及びn側銅ピラー26bは、積層体12に設けられたn側電極16と接続可能なn側引き出し電極を構成する。
積層体12は、個片化されるチップの分離部12fが除去されており、薄く、堅く、且つ脆いGaNなどの割れを抑制することが容易となる。
図2(a)の第2の変形例において、発光層12eが窒化物系半導体の場合、積層体12はサファイヤなどの透光性基板10の上に結晶成長するか、またはGaAsなどの仮基板上に結晶成長されたのちウェーハ接着法などを用いて透光性基板10へ移し替えられることが多い。図2(a)は、透光性基板10を残した状態のWLP型発光装置である。結晶成長工程での基板の厚さは、数百μmと厚くして割れや反りを低減することが多い。本実施形態では、銅ピラー26や補強樹脂28の充填により機械的強度を高めることができるので、透光性基板10を研削により薄くすることができる。
図3は、発光素子形成工程からシード金属成膜工程までを表す。
サファイヤなどからなる透光性基板10の第1の面10aに、例えばバッファ層及びn型層を含む下部層12bと、上部層12aと、を有する積層体12を形成する。積層体12の第1の面12cは、透光性基板10の第1の面10aと隣接しており略平坦である。また、積層体12の第2の面(破線)12dは、上部層12aの表面と、上部層12aが除去されて露出した下部層12bの表面と、を含み段差を有している。
例えば、シード金属22の上にフォトレジスト40をパターニングし(図4(a))、パターニングされたフォトレジスト40をマスクとして、電解メッキ法により銅配線層24を選択的に形成する。このようにして、互いに分離された銅配線層24a、24bが形成される(図4(b))。このとき、20a、20bの径、または,底面積よりも、銅配線層24a、24bの底面積が大となる程度まで,銅配線層24a、24bを形成することが好ましい。この場合、薄いシード金属22が電解メッキ工程における電流経路となる。こののち、アッシング法などを用いてフォトレジスト40が除去されると、図4(c)に表す構造となる。
図5(a)のように厚膜フォトレジストのパターニングを行い、p側銅配線層24a上に開口42a、n側銅配線層24b上に開口42b、を形成する。続いて、電解メッキ法を用いて、p側電極14と接続されたp側銅ピラー26a、n側電極16と接続されたn側銅ピラー26b、をそれぞれ形成する(図5(b))。この場合にも薄いシード金属22が電解メッキ工程における電流経路となる。なお、銅ピラー26の厚さを、例えば10〜数百μmの範囲とすると、透光性基板10を分離しても発光装置の強度を保つことができる。なお、開口42a、42bは、絶縁膜に形成してもよい。
第1の実施形態を表す図1(a)の構造に、さらに銅ピラー26aの表面に半田ボール36a、銅ピラー26bの表面に半田ボール36bが、BGA(Ball Grid Array)状に設けられている。半田ボール36の材質は限定されるものではないが、例えばSnAgなどとすると、鉛フリーとできる。
図7(a)は、透光性基板10を剥離した発光装置(WLP)5を表す。
図7の工程断面図では、積層体12の下部層12bは透光性基板10の第1の面10aに沿って連続している。これはウェーハ全面に積層体12が形成されていた方が、レーザ照射によってGaNからなる積層体12を透光性基板10から分離することが容易となるためである。 この場合、積層体12を含むウェーハは平坦なツールや治具の上に真空吸着や粘着等によって固定されていることが望ましい。
半導体積層体や蛍光体層などの支持体62の上に形成した石英ガラス60の上にフォトレジスト50によるドットパターンを形成する(図9(a))。対レジスト低選択比加工を、第1ステップ(図9(b))、第2ステップ(図9(c))、第3ステップ(図9(d))などと段階的に行う。それぞれのステップにおいて、レジスト・ドットパターンがエッチングにより縮小すると共に、フォトレジスト50の周辺部では傾斜を生じる。
すなわち、本図のようにナノインプリント法を用いることも可能である。液状で加熱によってガラス化する特性を持ったSOG(Spin On Glass)61などをスピンコート等によって支持体62の上に塗布し(図10(a))、レンズの形状をかたどったナノスタンパー53を押し付けてレンズ形状を形成した後(図10b))、ナノスタンパー53を剥離し、SOG61を加熱してガラス化する(図10(c))。この手法によれば、ナノスタンパー53の形を任意に設計することが可能であるため、如何なる形状のレンズであっても容易に製造することが出来る。
本変形例では、積層体12の第1の面12cにまず凸レンズ32を形成し(図11(a))、そののち凸レンズ32の上に蛍光体層31を形成する(図11(b))。続いて、銅ピラー26の表面に半田ボール36を形成し(図11(c))、個片化により発光装置6とする(図11(d))。
第2の実施形態の個片化した発光装置6及びそれに付随した変形例では、WLPによる発光装置の基板を除去することにより、より薄型化された発光装置が提供される。
第1の実施形態の変形例である図2(a)において、透光性基板10の厚さを研削により薄くすることが可能である。例えば数十μm程度残す(図12(a))と、透光性基板10をすべて除去する構造よりも機械的強度を高めることが容易となる。続いて、蛍光体層30形成(図12(b))、凸レンズ32形成(図12(c))、半田ボール36形成(図12(d))、個片化(図12(e))の工程を行う。
図13(a)のように、凸レンズ32を形成したのち、蛍光体層31を形成し(図13(b))、半田ボール36を形成し(図13(c))、個片化(図13(d))する。
第3の実施形態の発光装置及びその変形例では、透光性基板10を薄層化して残すことにより、厚さを薄く保ちつつ機械的強度を高めることが容易となる。
第1〜第3の実施形態においてレンズをアレイレンズとしたが、本発明はこれに限定されない。図14のようの1枚レンズであってもよい。1枚レンズとすると、光学設計及び製造プロセスが簡素にできる。
図15(a)及び図15(b)の模式平面図に示すように大きさの異なるレンズ32a、32b、32c、32d、32eを並べても構わない。小さなレンズを大きなレンズの隙間に配置することにより、レンズで覆う領域を増やすことが可能となる。また、図15(c)の模式斜視図に示すように四角い外形のレンズ33aを用いても構わない。
本実施形態では、互いに隣接する積層体が離間している。また、第1の積層体の第1のp側電極14と、隣接する第2の積層体の第2のn側電極16と、を連結してパターニングを行う。さらに、第1の積層体と第2の積層体との間のシード金属22を除去しなくともよい。このようにして、シード金属22と銅配線層24とが第1及び第2の発光素子の間で連結される。すなわち2つの発光素子が直列接続可能となる。このように直列接続することにより、高出力化が容易となる。もちろん、直列接続数は2つに限定されることなく、より多段の直列接続が可能である。また、第1及び第2の積層体の併設方向とは交差する方向に隣接する積層体を互いに連結して並列接続することも可能である。
透光性基板10を各発光素子毎に分離してもよい。このようにすると、個々の発光素子は剛直な透光性基板10で保護されているため、極めて信頼性の高い構造とすることができる。さらに、この製造方法として図17(a)に示すように、透光性基板10の各発光素子間の隙間に発光素子形成面10a側から溝10cを形成しておくことも可能である。溝10cの形成は、例えば発光素子形成工程の前後で行うことができ、エッチング加工、レーザ加工、ブレード切削等の手法を用いることができる。このようにしておくと、その後の透光性基板10を薄く研削した際に(図17(e))、剛直な透光性基板10は個片に細分化されるため、割れてしまう危険性が大幅に低減できる。加えて、パッケージに個片化する際にも剛直な透光性基板がない部分を切断することになるため(図18)、高い生産性と歩留まりを実現することが出来る。さらに個片化した後も、透光性基板10と積層体12とが小さなサイズに分離されているため、透光性基板10と積層体12が割れにくくなっており、さらにパッケージ全体として柔軟になり、実装後の接続点の信頼性が向上する。さらにパッケージの反りも小さくなり、実装が容易となる。さらに、曲面状の物体に対して実装することも可能となる。
図16においては、p側電極14とn側電極16との分離領域21が直線状となっているため、分離領域21でウェーハが割れてしまう危険があったが、p側電極14とn側電極16との分離部(破線)を図19のように蛇行させると、銅配線層24のせり出した部分によって補強されるため、透光性基板10を研削により薄くしても機械的強度を保つことが容易となる。図19(a)では略格子状の位置に銅ピラー26が配置されるが、図19(b)のような配置であってもよい。また、同様の効果は透光性基板10を分離した形態であっても発現することはもちろんである。
電流がチップの縦方向に流れる領域が発光するので、発光層12eを含む上部層12aの面積を広くすると高い光出力とすることができる。この場合、上部層12aが除去され露出した下部層12bの面積はn型の非発光領域であり、狭い面積でもn側電極16との間での低コンタクト抵抗とすることが容易である。
また、その製造方法において、ウェーハレベルでの組立及び検査工程が可能であるため高い生産性が容易である。このため価格低減を図ることができる。
Claims (5)
- 発光層を有する積層体を、その第1の面が透光性基板の第1の面に隣接するように形成する工程と、
前記積層体の前記第1の面とは反対側の第2の面側に設けられたp側電極及びn側電極上に、第1及び第2の開口を有する絶縁膜を前記第2の面側に形成する工程と、
前記絶縁膜と前記第1及び第2の開口とを覆うシード金属を形成する工程と、
前記シード金属の上にp側金属配線層及びn側金属配線層をそれぞれ形成する工程と、
前記p側金属配線層の上にp側金属ピラーを、前記n側金属配線層の上にn側金属ピラーを、それぞれ形成する工程と、
前記p側金属配線層と前記n側金属配線層との間に露出した前記シード金属を除去し、p側シード金属とn側シード金属とに分離する工程と、
前記シード金属を除去した空間の少なくとも一部に樹脂を形成する工程と、
を備えたことを特徴とする発光装置の製造方法。 - 発光層を有する積層体を、その第1の面が透光性基板の第1の面側に隣接するように形成する工程と、
前記積層体の前記第1の面とは反対側の第2の面に設けられたp側電極及びn側電極を上に、第1及び第2の開口を有する絶縁膜を前記第2の面側に形成する工程と、
前記絶縁膜と前記第1及び第2の開口とを覆うシード金属を形成する工程と、
前記シード金属の上にp側金属配線層及びn側金属配線層をそれぞれ形成する工程と、
前記p側金属配線層と前記n側金属配線層との間に露出した前記シード金属を除去し、p側シード金属とn側シード金属とに分離する工程と、
前記シード金属を除去した空間の少なくとも一部に樹脂を形成する工程と、
を備えたことを特徴とする発光装置の製造方法。 - 前記積層体を形成する工程は、互いに離間し且つ隣接した第1及び第2の積層体を形成する工程を含み、
前記p側金属配線層及び前記n側金属配線層を形成する工程は、前記第1の積層体の側に設けられる第1のp側金属配線層と前記第2の積層体の側に設けられる第2のn側金属配線層とを連結して形成する工程を含み、
前記p側シード金属と前記n側シード金属とに分離する工程は、前記第1の積層体の側に設けられた第1のn側金属配線層と前記第1のp側金属配線層との間に露出した前記シード金属を除去し第1のn側シード金属と第1のp側シード金属とに分離するとともに、前記第2の積層体の側に設けられた第2のp側金属配線層と前記第2のn側金属配線層との間に露出した前記シード金属を除去し第2のp側シード金属と第2のn側シード金属とに分離する工程を含むことを特徴とする請求項1または2に記載の発光装置の製造方法。 - 第1の面と、前記第1の面とは反対側の第2の面と、を有し、且つ発光層を有する積層体と、
前記積層体の前記第2の面に設けられたp側電極及びn側電極と、
前記p側電極及び前記n側電極が露出する開口を有する絶縁膜と、
前記p側電極上に設けられたp側シード金属と、前記p側シード金属の上に設けられたp側金属配線層と、前記p側再配線層の上に設けられたp側金属ピラーと、を有するp側引き出し電極と、
前記n側電極上に設けられたn側シード金属と、前記n側シード金属の上に設けられたn側金属配線層と、前記n側金属配線層の上に設けられたn側金属ピラーと、を有するn側引き出し電極と、
前記p側引き出し電極及び前記n側引き出し電極を囲むように、充填された樹脂層と、
を備え、
前記発光層からの放出光は、前記積層体の前記第1の面を介して放出されることを特徴とする発光装置。 - 第1の面と、前記第1の面とは反対側の第2の面と、を有し、且つ発光層を有する積層体と、
前記積層体の前記第2の面に設けられたp側電極及びn側電極と、
前記p側電極及び前記n側電極が露出する開口を有する絶縁膜と、
前記p側電極上に設けられたp側シード金属と、前記p側シード金属の上に設けられたp側金属配線層と、を有するp側引き出し電極と、
前記n側電極上に設けられたn側シード金属と、前記n側シード金属の上に設けられたn側金属配線層と、を有するn側引き出し電極と、
前記p側引き出し電極及び前記n側引き出し電極を囲むように、充填された樹脂層と、
を備え、
前記発光層からの放出光は、前記積層体の前記第1の面を介して放出されることを特徴とする発光装置。
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KR101731058B1 (ko) * | 2016-02-11 | 2017-05-11 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
JP6269901B1 (ja) * | 2016-05-31 | 2018-01-31 | サンケン電気株式会社 | 発光装置 |
KR101797561B1 (ko) * | 2017-04-18 | 2017-12-12 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
JP7050250B2 (ja) | 2020-02-07 | 2022-04-08 | 日亜化学工業株式会社 | 発光装置 |
JP2021125621A (ja) * | 2020-02-07 | 2021-08-30 | 日亜化学工業株式会社 | 発光装置 |
JP7492174B2 (ja) | 2020-03-31 | 2024-05-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US11646392B2 (en) | 2020-06-09 | 2023-05-09 | Nichia Corporation | Method of manufacturing light-emitting device |
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TW201031033A (en) | 2010-08-16 |
US20160027982A1 (en) | 2016-01-28 |
TW201421740A (zh) | 2014-06-01 |
TWI501426B (zh) | 2015-09-21 |
JP4724222B2 (ja) | 2011-07-13 |
US20120097972A1 (en) | 2012-04-26 |
EP2197051A3 (en) | 2011-06-22 |
US20100148198A1 (en) | 2010-06-17 |
US9478722B2 (en) | 2016-10-25 |
EP2197051B1 (en) | 2016-12-14 |
TWI505507B (zh) | 2015-10-21 |
US9184357B2 (en) | 2015-11-10 |
EP2197051A2 (en) | 2010-06-16 |
US8110421B2 (en) | 2012-02-07 |
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