JP2009277706A - Package light emitting component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package light emitting component which allows light emission color adjustment after being assembled. <P>SOLUTION: In the package light emitting component which has a plurality of LEDs 2A and 2B, emitting light beams differing in wavelength, disposed between a pair of input terminals 7A and 8A or input terminal 7B and 8B applied with voltages and packaged in one, an PNP type transistor 5A or PNP type transistor 5B that is a non-linear element adjusts the state of a mixed color of light beams emitted by the plurality of LEDs 2A and 2B or LEDs 2C and 2D based upon a voltage applied between the pair of input terminals 7A and 8A or input terminal 7B and 8B. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a package light emitting component.

  The range of applications of light-emitting components typified by light-emitting diodes (LEDs) is expanding. For example, blue and yellow-green LEDs (InGaN chip and AlGaInP chip) are mounted on each component one by one, and these emission colors are mixed to produce yellow-white, blue-white, and white light-emitting components. Is known (see Patent Document 1).

  This Patent Document 1 has two transmission paths that branch between a pair of input terminals, each of which is provided with an InGaN chip and an AlGaInP chip, and at least one of the transmission paths has a resistance element. A circuit configuration arranged in series with an InGaN chip and / or an AlGaInP chip is disclosed.

JP 2005-209830 A

  However, in the circuit configuration disclosed in Patent Document 1 described above, the light emission color obtained by mixing colors cannot be adjusted after the light emitting component is assembled.

  Therefore, the problem to be solved by the present invention is to provide a package light emitting component capable of adjusting the light emission color after the package light emitting component is assembled.

  In order to solve the above-described problems, a package light-emitting component according to the present invention is a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are disposed between input terminals to which a voltage is applied to form a single package. The color mixing state of light emitted from a plurality of light emitting elements can be adjusted by a non-linear element based on the applied voltage between the paired input terminals.

  According to the present invention, the light emitting color of the package light emitting component can be adjusted even after the package light emitting component is assembled by the action of the nonlinear element.

  In order to solve the above-described problems, a package light-emitting component according to the present invention is a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are disposed between input terminals to which a voltage is applied to form a single package. The first transmission path and the second transmission path are branched between the paired input terminals, and the first transmission path has, in order from the plus side of the paired input terminals, A first light emitting element, an NPN transistor that is a nonlinear element, and a first resistance element are disposed. The NPN transistor is disposed such that the emitter is positioned on the minus side of the input terminal that forms a pair with respect to the collector. In the second transmission line, a second resistance element and a second light emitting element are arranged in order from the plus side of the paired input terminals, and the second resistance element and the second light emission of the second transmission line are arranged. The third transmission from the contact between the elements Road is connected to the base of an NPN transistor.

  According to the present invention, by changing the applied voltage between the paired input terminals, the current flowing through the first light emitting element changes in proportion to the value of the current flowing between the emitter and the base. The change in the current value flowing through the first light emitting element is different from the change in the current value flowing through the second light emitting element. Therefore, the light emission color can be adjusted after the package light emitting component is assembled.

  In order to solve the above-described problems, a package light-emitting component according to the present invention is a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are disposed between input terminals to which a voltage is applied to form a single package. The first transmission path and the second transmission path are branched between the paired input terminals, and the first transmission path includes the first transmission path in order from the plus side of the paired input terminals. 1 resistor element, non-linear element PNP type transistor, and first light emitting element are arranged, and the PNP type transistor is arranged so that the collector is located on the negative side of the paired input terminal rather than the emitter, In the second transmission line, a second light emitting element and a second resistance element are arranged in this order from the plus side of the paired input terminal. The second resistance element and the second light emitting element of the second transmission line A third transmission line from the contact point between It is connected to the base of the PNP transistor.

  According to the present invention, by changing the applied voltage between the paired input terminals, the current flowing through the first light emitting element changes in proportion to the value of the current flowing between the emitter and the base. The change in the current value flowing through the first light emitting element is different from the change in the current value flowing through the second light emitting element. Therefore, the light emission color can be adjusted after the package light emitting component is assembled.

  Another invention includes a substrate on which a light emitting element, a non-linear element, a first resistance element, and a second resistance element are arranged in addition to the above-described package light emitting component invention. A non-linear element is arranged, and a first resistance element and a second resistance element are arranged on the back surface opposite to the front surface. By adopting this configuration, the light-emitting component has a light-emitting element and a resistive element that generates Joule heat when energized separately on the front and back surfaces of the substrate. Therefore, even if a plurality of light-emitting elements are arranged, It is possible to provide a package light emitting component in which generated portions are difficult to concentrate and heat dissipation efficiency is good.

  According to the present invention, it is possible to provide a package light emitting component capable of adjusting a light emission color after the package light emitting component is assembled.

  Hereinafter, a package light-emitting component (hereinafter referred to as “light-emitting component”) according to an embodiment of the present invention will be described.

  1 to 3 show a light-emitting component 1 according to an embodiment of the present invention. FIG. 1 is a front view of the light-emitting component 1, FIG. 2 is a plan view, and FIG. It is the bottom view shown with the dotted line. In FIG. 2, illustration of the state of electrical connection between the component parts is omitted.

  The configuration of the light emitting component 1 will be described. In the description, it is assumed that the light emitting component 1 employs a circuit 6A described later. Note that the description is the same when the light emitting component 1 adopts a circuit 6B described later. The light-emitting component 1 includes a substrate 4 on which light-emitting elements that emit light (LEDs 2A and 2B, generically referred to as LED2), resistive elements 3A and 3B (generically referred to as resistive element 3), and the like are disposed. It is mainly composed of a penetrating member 12 fixed on the substrate 4. An NPN transistor 5A is further disposed on the substrate 4. The penetrating member 12 has a through hole 12 </ b> C whose diameter gradually increases as it proceeds in the light projecting direction of the LED 2.

(About each component)
The substrate 4 is made of alumina ceramic having a square outer shape with a total of four semi-cylindrical cutouts 4D each having a pair of opposed end faces. The thickness of the substrate 4 is 1.5 mm. The substrate 4 may be made of a ceramic other than alumina ceramic, such as aluminum nitride, or a resin type such as a glass fiber mixed epoxy resin molded body.

  On the surface of the substrate 4, as shown in FIG. 2, a penetrating member 12, a translucent resin (not shown) filled in the through-hole 12C of the penetrating member 12, a member covered with the translucent resin, That is, each member (not shown) for electrical connection between the NPN transistor 5A, the LED 2, and these components is formed or arranged. The LED 2A emits blue light, and the LED 2B emits yellow light.

  The light emitting element according to the embodiment of the present invention is an LED. However, instead of the LED, for example, an EL element such as a semiconductor laser or an organic EL (electro-luminescence), or another light emitting element such as a fluorescent display tube can be used.

  The resistance element 3 is disposed on the back surface of the substrate 4. As shown in FIG. 3, the resistance element 3 includes two pairs of resistance element electrodes 3A1, 3A2, 3B1, and 3B2 extending from the surface of the cutout portion 4D (generically called resistance element electrodes 3A1 and the like). Have. Resistor films 18a and 18b are arranged so as to overlap the pair of resistance element electrodes 3A1 and 3A2 and resistance element electrodes 3B1 and 3B2, respectively. As shown in FIG. 3, each of the two resistance elements 3A and 3B has a glass film 19 that covers almost the entire area, and is used for adjusting the resistance value over the glass film 19 and the resistor films 18a and 18b. A trimming groove 23 is formed. The resistor element 3 has the trimming groove 23 formed therein. Then, an overcoat film 20 is disposed on the glass film 19 in order to protect the trimming groove 23.

  The resistive element 3 is formed with a thick film. Instead of this thick film, a thin film may be used. Further, instead of the resistance element 3, a chip-type trimmable chip resistor that can be trimmed may be used. Further, the glass film 19 constituting the resistance element 3 covers substantially the entire back surface of the substrate 4 to the extent that a part of the resistance element electrode 3A1 and the like is exposed, but part of the resistor films 18a and 18b or It is good enough to cover everything.

  As described above, four notches 4D are formed on the end surface connecting the front surface and the back surface of the substrate 4. A conductor is disposed on the surface of the notch 4D. This conductor makes electrical connection between the LED 2 and the NPN transistor 5A arranged on the front surface of the substrate 4 and the resistance element 3 arranged on the back surface of the substrate 4, and two of the four conductors are connected to the external terminal 15. Become. The external terminal 15 is the upper left and lower right in FIG. 3 among the four notches 4D. The external terminals 15 are a plus (hereinafter, indicated as “+”) input terminal 7A and a minus (hereinafter, indicated as “−”) input terminal 8A, which will be described later. The position of the external terminal 15 can be changed as appropriate. The cutout portion 4D may have another space shape such as a rectangular parallelepiped space or a semi-elliptical column space instead of the semi-cylindrical shape.

  Further, in order to improve the solder wettability of the external terminal 15 for soldering to the land of the mounting substrate on which the light emitting component 1 is mounted, the external terminal 15 is usually formed by a barrel plating method in a plating process described later. A nickel plating layer and a solder plating layer (not shown) are arranged in this order. In the barrel plating method, a large number of light-emitting components 1 are put together with metal particles called dummy balls into a housing immersed in a plating bath, and the housing is rotated or vibrated and energized. To do. Here, as the probability that the dummy ball and the external terminal 15 come into contact with each other increases, the plating layer formation speed increases. The probability tends to increase when the shape of the external terminal 15 is complicated. If the external terminal 15 is formed on the side surface of the semi-cylindrical cutout 4D, the overall shape of the external terminal 15 becomes complicated. Therefore, when the external terminal 15 is disposed on the side surface of the semi-cylindrical cutout 4D, there is an advantage that the plating rate on the external terminal 15 is increased.

  Since the external terminal 15 is disposed on the side surface of the semi-cylindrical cutout portion 4 </ b> D, the external terminal 15 is disposed on the recessed portion of the side surface of the light emitting component 1. Therefore, when the light emitting component 1 is handled, for example, when the light emitting component 1 is lifted and moved to be mounted on a mounting substrate using a chip mounter, the external terminal 15 is moved to another object (for example, a component lifting member of the chip mounter). Etc.) have the advantage of being hardly damaged.

  The nickel plating layer and the solder plating layer described above are arranged in this order on the surface of the external terminal 15 (not shown). The solder plating layer plays a role of improving solder wettability when mounted using solder on a mounting substrate on which the light emitting component 1 is mounted. The nickel plating layer plays a role of preventing the external terminals 15 and the solder from alloying and the external terminals 15 from melting. The thicknesses of both plating layers are preferably between 3 μm and 12 μm. If the layer thickness is less than 3 μm, the formation of the plating layer may be insufficient. When the layer thickness exceeds 12 μm, the outer dimensions of the light emitting component 1 may be different from the intended ones. In particular, when the light emitting component 1 is miniaturized, the influence of the external dimensions becomes large.

  The penetrating member 12 having a cylindrical through-hole 12 </ b> C has a square shape when viewed from the upper surface where the x direction and the y direction have the same length with respect to the substrate 4. The square has the same dimensions as the square of the outer shape of the substrate 4 described above. The penetrating member 12 is fixed to the surface of the substrate 4. This penetrating member 12 is a molded body of a liquid crystal polymer resin. This liquid crystal polymer is a resin having good heat dissipation, and is advantageous for releasing the heat generated by the resistance element 3 and the NPN transistor 5A and maintaining the characteristics of the resistance element 3 and the NPN transistor 5A. In order to obtain the heat dissipation property, polyphenylene sulfide (PPS), polyphenylene ether (PPE) or the like can be used instead of the liquid crystal polymer resin.

  The penetrating member 12 is fixed to the substrate 4 such that the through hole 12 </ b> C faces the surface of the substrate 4. As a result of this fixation, the through-hole 12C portion becomes a cavity (concave portion) 12F whose bottom surface is the surface of the substrate 4. As another member corresponding to both the penetrating member 12 and the substrate 4 constituting the light emitting component 1 having such a recess 12F, for example, LTCC (Low Temperature Co-fired Ceramics: ceramic powder containing glass or the like): This is a member obtained by a method in which a portion corresponding to the substrate 4 and a portion corresponding to the penetrating member 12 are integrally formed and fired using a low-temperature co-fired ceramic) under conditions of good moldability. At this time, the recess 12F is provided in the integrally formed substrate. The shape of the recess 12F is determined from the viewpoint of the shape of the light-emitting component 1, the number of drive circuit members of the LED 2 accommodated in the recess 12F such as the NPN transistor 5A, or the specifications of the light-emitting component 1 and the strength of the penetrating member 12. The shape or size can be adopted as appropriate. Speaking of the shape of the through hole 12C, a cylindrical shape, a truncated cone shape, a rectangular parallelepiped shape, or the like can be adopted.

  The penetrating member 12 has notches called cathode marks 12A (see FIGS. 1 and 2) at two adjacent corners on the upper surface thereof. The cathode mark 12A plays a role of making the mounting direction known when the light emitting component 1 is mounted on the mounting board. The cathode mark 12A is important for the light emitting component 1 using the substrate 4 and the penetrating member 12 having a square outer shape.

  Moreover, it is preferable to provide a light reflection layer on the inner side surface (side surface and / or bottom surface) of the recess 12F. The reason is that the light reflecting layer can promote the reflection of the light irradiated on the inner surface of the recess 12F so that the light quantity of the light emitting component 1 is not reduced. For the arrangement of the light reflecting layer, a thin film forming technique such as a plating method or a sputtering method, a technique for attaching a metal foil, or the like can be employed. The material of the light reflecting layer can be a metal such as nickel, copper, gold, silver, titanium, or platinum. Moreover, a light reflection layer can be formed by laminating two or more of these metals. Furthermore, a light reflection layer can be formed using an alloy composed of two or more of these metals.

  The inside of the recess 12F is filled with a translucent resin (not shown). This translucent resin also plays a role of maintaining the electrical connection between the LED 2 and the NPN transistor 5A. This translucent resin exists only inside the recess 12F. Silicone resin is used as the translucent resin. This silicone-based resin can suppress deterioration of the sealing resin when many components in the ultraviolet region are included among the light components emitted from the LED 2. However, other materials (for example, epoxy resin) can be used depending on the specification, application, light intensity, and the like of the light emitting component 1. The translucency of the translucent resin can be changed / adjusted according to the specification, application, luminous intensity, etc. of the light-emitting component 1. Furthermore, the translucent resin may be filled only inside the recess 12F as in the light emitting component 1, or may be filled in a state of overflowing from the inside of the recess 12F to the outside. However, the light emitting state of the light emitting component 1 is likely to be unstable by making the translucent resin overflow from the inside of the recess 12F to the outside. The reason is that the translucent resin in the portion overflowing from the recess 12F has a difficult shape and may disturb the light emission state of the light emitting component 1. Note that the light emission state of the light-emitting component 1 is stabilized by adjusting the shape such as causing the translucent resin to overflow from the recess 12F and making the entire surface of the penetrating member 12 have a uniform height. Further, a translucent resin may be provided so as to protrude spherically from the concave portion 12F, that is, a translucent resin may be provided so as to fulfill the function of a convex lens. In this way, the light emitted from the LED 2 becomes light that is focused at a predetermined distance, which is effective when it is desired to increase the luminous intensity. Conversely, if the upper surface of the translucent resin is made to be a concave mirror, the light from the LED 2 diverges, which is advantageous when it is desired to make the amount of light uniform.

  The penetrating member 12 exists on the upper part of the substrate 4 on which the external terminals 15 are formed. Therefore, when the penetrating member 12 comes into contact with another object first, the thing and the external terminal 15 are prevented from approaching, and the probability that the external terminal 15 comes into contact with another object is lowered. Further, the penetrating member 12 protects the external terminal 15 from an impact by the elasticity of the resin that is the material of the penetrating member 12.

  In the light emitting component 1, the two external terminals 15 become a pair of a + input terminal 7A and a -input terminal 8A (see FIG. 3). Between the two input terminals 7A and 8A, there is an LED 2A that emits blue light and an LED 2B that emits yellow light. The color mixing state of the light emitted by the two LEDs 2 can be adjusted by the NPN transistor 5A, which is a non-linear element, based on the voltage applied between the + input terminal 7A and the − input terminal 8A. . Each of the two LEDs 2 is connected to a resistance element 3 for adjusting the luminous intensity thereof. These resistance elements 3 are adjusted in resistance value (trimming) so that the light emission color of the light emitted from the two light emitting elements is substantially white. Below, the concrete circuit structure of the light emitting component 1 is demonstrated based on FIG.

(Circuit configuration of the light-emitting component according to the first embodiment)
FIG. 4A shows a circuit 6A constituting the light emitting component 1 according to the first embodiment. The circuit 6A has a + input terminal 7A and a-input terminal 8A. Between the + input terminal 7A and the − input terminal 8A, a first transmission path 9A and a second transmission path 9B branch off. In the first transmission line 9A, an LED 2A that emits blue light, an NPN transistor 5A, and a resistance element 3A whose resistance value is adjusted are arranged in this order from the + input terminal 7A side. The NPN transistor 5A is arranged such that the emitter is positioned closer to the negative input terminal 8A than the collector. In the second transmission path 9B, a resistance element 3B whose resistance value is adjusted and an LED 2B that emits yellow light are arranged in this order from the + input terminal 7A side. The third transmission path 9C is connected to the base of the NPN transistor 5A from the contact 10A between the resistance element 3B of the second transmission path 9B and the LED 2B.

(Operation of Circuit 6A of Light-Emitting Component According to First Embodiment)
When a voltage is applied between the positive input terminal 7A and the negative input terminal 8A, the second transmission path 9B is turned on and a current flows through the LED 2B, and the bias resistance of the resistive element 3B causes the NPN transistor 5A to have a base. A voltage is applied, and the NPN transistor 5A is turned on. Then, conduction between the collector and the emitter of the NPN transistor 5A becomes possible, current is supplied to the LED 2A, and current flows to the resistance element 3A.

  When the voltage applied between the + input terminal 7A and the-input terminal 8A is changed, the voltage at the contact 10A changes slightly, and the value of the current flowing between the emitter and base of the NPN transistor 5A changes slightly. . This change greatly changes the collector current of the NPN transistor 5A. As a result, the ratio of the current values flowing through the LEDs 2A and 2B is different from that before the voltage applied between the + input terminal 7A and the -input terminal 8A is changed. For example, when the voltage applied between the positive input terminal 7A and the negative input terminal 8A is increased, the amount of increase in the current value flowing in the LED 2A emitting blue light is relatively larger than the amount of increase in the current value flowing in the LED 2B emitting yellow light. The color of the light emitted from the light emitting component 1 is slightly bluish. Conversely, if the voltage applied between the + input terminal 7A and the − input terminal 8A is reduced, the amount of decrease in the current value flowing through the LED 2A becomes relatively smaller than the amount of decrease in the current value flowing through the LED 2B. The color of the emitted light is slightly yellowish.

(Circuit structure of the light emitting component according to the second embodiment)
A circuit 6B constituting the light emitting component 1 according to the second embodiment is shown in FIG. The circuit 6B has a + input terminal 7B and a − input terminal 8B. A fourth transmission path 9D and a fifth transmission path 9E are branched between the + input terminal 7B and the − input terminal 8B. In the fourth transmission line 9D, a resistance element 3C whose resistance value is adjusted, a PNP transistor 5B, and an LED 2C that emits blue light are arranged in this order from the + input terminal 7B side. The PNP transistor 5B includes an emitter thereof. Are arranged such that the collector is positioned closer to the −input terminal 8B side, and in the fifth transmission line 9E, the LED 2D that emits yellow light and the resistance element 3D whose resistance value is adjusted are arranged in this order from the + input terminal 7B side. The sixth transmission path 9F is connected to the base of the PNP transistor 5B from the contact 10B between the resistance element 3D and the LED 2D of the fifth transmission path 9E.

(Operation of Light-Emitting Component Circuit 6B according to Second Embodiment)
When a voltage is applied between the positive input terminal 7B and the negative input terminal 8B, the fifth transmission path 9E is turned on to allow current to flow through the LED 2D, and a voltage is applied to the base of the PNP transistor 5B by the bias resistance of the LED 2D. When applied, the PNP transistor 5B is turned on. Then, conduction between the collector and the emitter of the PNP transistor 5B becomes possible, current is supplied to the resistance element 3C, and current flows to the LED 2C.

  When the voltage applied between the + input terminal 7B and the − input terminal 8B is changed, the voltage at the contact 10B changes slightly, and the value of the current flowing between the emitter and the base of the PNP transistor 5B changes slightly. . This change greatly changes the collector current of the PNP transistor 5B. As a result, the ratio of the current value flowing through the LED 2C and the LED 2D is different from that before the voltage applied between the + input terminal 7B and the − input terminal 8B is changed. For example, when the voltage applied between the + input terminal 7B and the − input terminal 8B is increased, the increase amount of the current value flowing through the LED 2C is relatively larger than the increase amount of the current value flowing through the LED 2D emitting yellow light. The color of the light emitted from the light emitting component 1 is slightly bluish. Conversely, when the voltage applied between the + input terminal 7B and the − input terminal 8B is reduced, the amount of decrease in the current value flowing through the LED 2C becomes relatively smaller than the amount of decrease in the current value flowing through the LED 2D. The color of the emitted light is slightly yellowish.

  Next, a method for manufacturing the light emitting component 1 according to the embodiment of the present invention will be described below with reference to the drawings. In the description, it is assumed that the light emitting component 1 employs the circuit 6A. The description is the same when the light emitting component 1 employs the circuit 6B.

(Method for manufacturing light-emitting component 1)
The manufacturing method of the light-emitting component 1 includes a mounting step of mounting the two LEDs 2 on the surface of the substrate 4 and a resistance value adjustment 2 on the back surface opposite to the front surface so that the luminous intensity of each LED 2 falls within a predetermined range. A resistance forming process for forming the two resistance elements 3A and 3B, and the resistance forming process is performed before the mounting process.

  Further, as shown in FIG. 5, the manufacturing method of the light emitting component 1 includes a resistance forming step (S 1) in which only a plurality of unadjusted resistance elements whose resistance values are not adjusted, and a plurality of LEDs 2 and transistors 5 arranged on the substrate 4. An arranging step (S2), a wire bonding step (S3) as a conductor forming step for arranging a conductor connecting the unadjusted resistance element and the LED 2 and the transistor 5, and a penetration for fixing the penetrating member 12 to the substrate 4 The member fixing step (S4), the resin sealing step (S5) for supplying resin to the through hole 12C of the penetrating member 12, and the resistance value of each unadjusted resistance element are adjusted so that the luminous intensity of each LED 2 is within a predetermined range. A trimming step (S6), an overcoat forming step (S7) for forming an overcoat for protecting the trimming groove 23 of the resistance element 3 after the resistance value adjustment, and the linear dividing portion 4 And a dividing step (S8) for dividing the large insulating substrate 4C with the dividing portion into individual unit insulating substrates 4A and a plating step (S9) for forming a plating layer on the surface of the external terminal 15. Do in order.

  In the manufacture of the light emitting component 1 according to the embodiment of the present invention, as shown in FIG. 6A, the surface has a linear divided portion 4B that intersects the surface vertically and horizontally, and is surrounded by the linear divided portion 4B. A large-sized insulating substrate 4C with a divided portion having a plurality of unit insulating substrates 4A is used.

  The manufacturing method of the light emitting component 1 will be described separately for each process.

(Resistance forming step (S1))
First, a large insulating substrate 4C with a divided portion made of alumina ceramic is prepared (see FIG. 6A). The large insulating substrate 4C with divided portions has linear divided portions 4B (dividing grooves) and through holes 22 that intersect the surface in the vertical and horizontal directions. The through holes 22 have a cylindrical shape, and are formed at equal intervals in the y direction so that the centers of the circles are located on the line of the linear divided portion 4B. Then, two opposing y-direction sides of each unit insulating substrate 4A each have two semi-cylindrical shapes out of the through holes 22. Each resistance forming step is performed on the large insulating substrate 4C with the divided portions.

  Next, a conductor is formed on the large-sized insulating substrate 4C with a divided portion. A part of the conductor becomes the resistance electrode 3A1 of the resistance element 3 to be arranged. Also, a part of the conductor becomes a conductor (a part of various transmission paths 9A and the like) of the notch 4D on the surface and end face of the substrate 4.

  A method for forming a conductor will be described. First, a metal glaze paste (ink) of silver-palladium alloy powder is disposed on the back surface of the large insulating substrate 4C with divided portions by a through-hole printing method, and is fired to form a conductor. And the same through-hole printing is performed also on the surface of the large-sized insulating substrate 4C with a division part, and baked. Here, the through-hole printing method is to perform screen printing while sucking through the through-hole 22 from the surface of the large insulating substrate 4C with a divided portion on the side opposite to the printing surface. By this through hole printing method, the ink covers a part or all of the inner wall surface of the through hole 22. Therefore, through-hole printing is performed on both surfaces of the large insulating substrate 4C with the division part, and the inner wall surface (= the outer peripheral surface of the through hole) of the through hole 22 is formed on both front and back surfaces of the large insulating substrate 4C with the division part. The connected conductor is connected.

  Next, a pad is formed on the surface. Here, screen printing using a gold paste is performed on the surface of the large insulating substrate 4 </ b> C with a divided portion. This gold paste is printed and arranged at a position where it comes into contact with the conductor and a gold wire is connected later. Thereafter, the large insulating substrate 4C with the divided portions is fired to fix the pads. This pad plays a role of ensuring the connection between the conductor and the gold wire as the bonding wire. The pads and the conductors that do not constitute the resistance element 3 are not strictly related to the formation of the resistance element 3 and therefore do not need to be included in the resistance formation process. However, in the process of screen printing and firing at a high temperature. There are many similar points to other resistance forming processes, and therefore they are included in the resistance forming process.

  Next, the resistor film 18a is formed on the back surface. Therefore, a unit is formed by screen printing using a metal glaze paste (ink) of a mixed powder of ruthenium oxide and metal so as to come into contact with both the resistance electrode 3A1 and the resistance electrode 3A2 on the back surface of the substrate 4. One insulating substrate is disposed per 4A and is formed by firing. This one resistance film 18a relates to the resistance element 3A. Next, the type of ink is changed to form the resistor film 18b in the same manner as the resistor film 18a, and one resistor film 18a is disposed per unit insulating substrate 4A. The resistance film 18b relates to the resistance element 3B. By doing so, the specific resistance values of the resistance film 18a related to the resistance element 3A and the resistance film 18b related to the resistance element 3B are made different.

  Next, a glass film 19 is formed. Here, glass paste (ink) is used to cover not only the resistor films 18a and 18b formed earlier, but also the back surface of the substrate 4 (large insulating substrate 4C with a dividing portion) except for the external terminal 15 portion. Are formed by screen printing and fired to form. Here, the glass film 19 is also formed in a portion where the resistance electrode 3A1 and the like and the resistor films 18a and 18b overlap. However, the glass film 19 mainly protects the portions of the resistor films 18a and 18b that are not trimmed when the trimming groove 23 is formed. Therefore, the glass film 19 may be formed only in a region where the trimming groove 23 can be assumed to be formed. Thus, an unadjusted resistance element is formed.

(Arrangement process (S2))
Next, two LEDs 2 per unit insulating substrate 4A and one NPN transistor 5A having a height equal to or higher than that of LED 2 are arranged on the surface of the substrate 4 (large insulating substrate 4C with a dividing portion). A chip mounter is used for these placement operations. A thermosetting conductive resin adhesive (die bonding paste) is used for fixing the LED 2 and the NPN transistor 5A to the surface of the substrate 4. This adhesive is supplied by attaching to the needle tip and bringing the needle tip into contact with the surface of the substrate 4. Alternatively, the conductive resin adhesive may be supplied using a syringe such as a syringe. The above arrangement process is a part of the mounting process.

(Wire bonding process (S3))
In this wire bonding step, the conductor, pad, unadjusted resistance element, LED 2 and NPN transistor 5A formed in the resistance formation step (S1) and the placement step (S2) constitute the circuit 6A shown in FIG. Wire bonding using a gold wire is performed. The above wire bonding process becomes a part of the mounting process. The above-described arrangement process and wire bonding process are collectively referred to as a mounting process.

(Penetration member fixing step (S4))
Next, the penetrating member fixing step to be performed will be described. In this penetrating member fixing step, a large penetrating member 12D in which a large number of penetrating members 12 are connected vertically and horizontally is molded. A plan view of the large penetrating member 12D after molding is shown in FIG. Large penetration member 12D forms a plurality of penetration members 12 by being divided into many. The large penetrating member 12D is a liquid crystal polymer molded body. On the back surface of the large penetrating member 12D, penetrating member dividing lines 12E are formed vertically and horizontally at the same intervals as the linear dividing portions 4B. Further, the large penetrating member 12D has a portion corresponding to the cathode mark 12A shown in FIGS.

  In the penetrating member fixing step, a molding die is placed on the surface (the surface on the side where the LED 2 is disposed) of the large-sized insulating substrate 4C with the divided portion where the arranging step is finished, and the rear surface (for penetrating member) The surface on the side where the dividing line 12E is formed is injection-molded on the surface of the large insulating substrate 4C with a dividing portion. At the time of this injection molding, one of the plurality of through holes 12C of the large through member 12D surrounds the two LEDs 2 and the NPN transistor 5A, and the linear divided portions 4B and the through members formed in both of them are formed vertically and horizontally. It shape | molds so that the dividing line 12E for use may overlap. As a result, a large number of recesses 12F are formed by the through-holes 12C and the surface of the large insulating substrate 4C with the divided portions.

  Note that the penetrating member fixing step may be performed after the trimming step described later. Further, in the penetrating member fixing step, after all of the NPN transistor 5A and the LED 2 are arranged inside the through hole 12C, the large penetrating member 12D that has been molded in advance is fixed to the surface of the large insulating substrate 4C with the dividing portion. It can be a process.

(Resin sealing step (S5))
Next, the resin sealing process to be performed will be described. A translucent resin (not shown) is supplied only into the recess 12F to seal the gold wire, the LED 2 and the NPN transistor 5A. A silicone-based adhesive is used for the translucent resin. A screen printing method is used to supply the translucent resin. After the supply, the large insulating substrate 4C with the divided portions is heated to cure the translucent resin. Thus, by arranging the translucent resin only in the recess 12F, the translucent resin does not exist in the substrate region along the linear division part 4B. Therefore, in the dividing process described later, the division of the large insulating substrate 4C with the dividing portion is not hindered. As described above, the translucent resin may be formed so as to overflow the concave portion 12F, or the surface side may be convex or concave.

(Trimming process (S6))
Next, the trimming process to be performed will be described. In the trimming step, different indices (target values) are used for the two unadjusted resistance elements formed per unit insulating substrate 4A using the resistance film 18a and the one using the resistance film 18b. Adjust the resistance with. That is, the trimming process proceeds as follows. First, with respect to the unadjusted resistance element (hereinafter referred to as the resistance element 3B) related to the resistance element 3B shown in FIG. 3, the trimming probes are brought into contact with the resistance element electrodes 3B1 and 3B2 at both ends, and the resistance value of the unadjusted resistance element is measured. Then, the resistor film 18b is locally evaporated together with the glass film 19 by laser irradiation to form the trimming groove 23. Thereby, the current flow path of the unadjusted resistance element is narrowed until the target resistance value is reached.

  By performing this trimming, the bias current of the NPN transistor 5A shown in FIG. 4 is adjusted and the value of the current flowing to the LED 2B is adjusted. As a result, it is possible to cause the light emitting component 1 to emit light by flowing current through each transmission path. As a result, the unadjusted resistance element related to the resistance element 3B becomes the completed resistance element 3B. Here, the glass film 19 acts to suppress excessive destruction of the resistor film 18 b when the trimming groove 23 is formed.

  Thereafter, trimming is performed on the unadjusted resistance element (which will later become the resistance element 3A) related to the resistance element 3A shown in FIG. In this trimming, a trimming probe is brought into contact with the resistance element electrodes 3A1 and 3A2 at both ends of the unadjusted resistance element related to the resistance element 3A, and a voltage is applied between the + input terminal 7A and the −input terminal 8A. Then, the value of the current flowing through the unadjusted resistance element is measured, and the resistor film 18a of the unadjusted resistance element is locally evaporated together with the glass film 19 by laser irradiation to form the trimming groove 23. Then, the current flow path of the unadjusted resistance element is narrowed until the target current value is reached.

  By trimming the unadjusted resistance element related to the resistance element 3A, the current value supplied mainly to the LED 2A is adjusted to be within a predetermined range. As a result, the unadjusted resistance element is a completed resistance element 3A. When trimming the resistance element 3A, the resistance value may be adjusted using a specific voltage value when a constant current is applied to the resistance element 3A as a target value.

  The light emitting component 1 changes its characteristics due to heat generation of the NPN transistor 5A and the LED 2 when energized or irradiated with light. However, in the trimming process according to the embodiment of the present invention, trimming is performed while a constant voltage is applied between the + input terminal 7A and the − input terminal 8A so as to obtain a predetermined current. Therefore, since the resistance element 3A is trimmed in consideration of the characteristic change, it is possible to perform trimming with high accuracy in consideration of a state in actual use. Moreover, since the non-adjusted resistance element is formed on the surface of the large insulating substrate 4C with the divided portion different from the surface on which the LED 2 is disposed, it is preferable because it is difficult to be affected by the heat generation of the LED 2 and the like.

  The trimming process is performed while measuring the current values at both ends of the unadjusted resistance element. Instead of this current value, the trimming process can be performed while measuring the luminous intensity and / or color temperature of the LED 2. That is, the indicator of the end of the trimming process is the luminous intensity and / or color temperature of the LED 2. A simplified diagram showing an example of the trimming process while measuring the luminous intensity of the LED 2 is shown in FIG. Although FIG. 7 shows one light-emitting component 1 that has not undergone the trimming process, the trimming process is actually performed in a state before the division process described later. In the description of FIG. 7, a light emitting component that has not undergone the trimming process is referred to as a light emitting component 1 ', and an unadjusted resistance element is referred to as an unadjusted resistance element 3'.

  In FIG. 7, while operating the light emitting component 1 ′, the laser film 25 emitted from the trimming device 24 is applied to the portions of the resistor films 18 a and 18 b of the unadjusted resistance element 3 ′ by breaking the glass film 19. 19 and resistor films 18a and 18b are formed with trimming grooves 23. Then, a change in luminous intensity of light emission (indicated by reference numeral 27) of the LED 2 accompanying the formation of the trimming groove 23 is measured by a photometer 26. When the target light intensity can be obtained, the irradiation of laser light (indicated by reference numeral 25) is stopped. When trimming while measuring the color temperature, the irradiation of the laser beam is stopped if the target color temperature can be obtained using a color thermometer. Alternatively, target values may be set for both the luminous intensity and the color temperature, and laser light irradiation may be stopped when the target values are reached.

  In the trimming step while measuring the luminous intensity and / or color temperature of the LED 2 and the trimming step according to the above-described embodiment of the present invention, the surface side of the large insulating substrate 4C with the divided portion on the side where the LED 2 is disposed is It is preferable to provide a shielding means (for example, a box-shaped shielding plate 28 shown in FIG. 7) that does not allow light from the opposite substrate surface side to enter. The reason is that when light such as the laser beam 25 is mixed into the light emitted from the LED 2, it is difficult to measure the luminous intensity and / or color temperature of the LED 2 with high accuracy. Also, the evaporated resistor films 18a and 18b and the glass film 19 are cooled to become powdery, and are prevented from adhering to the light emitting surface of the LED 2 and affecting the luminous intensity of the light emitting component 1 'by the shielding means. This is because it can. In addition, as shown in FIG. 7, this adhesion preventing effect is that the arrangement surface of the LED 2 and the arrangement surface of the unadjusted resistance element 3 ′ on the substrate 4 are different, that is, the surfaces opposite to each other. Since the distance between the LED 2 and the unadjusted resistance element 3 ′ is large, it is obtained not a little. As the shielding means, without providing the shielding plate 28, or in addition to providing the shielding plate 28, a means for sucking the powder or blowing the powder to the side opposite to the LED 2 can be used. Further, the shielding means may be a cylindrical shape instead of the flat rectangular box shape as shown in the figure, or may be only the bottom portion 28a without providing the side surface 28b of the shielding plate.

  Further, it is preferable to perform the trimming process while measuring the luminous intensity of the LED 2 as compared to performing the trimming process while measuring the luminance of the LED 2. Luminous intensity is the intensity of light emitted from a light emitter, and is the magnitude of a light beam included in a unit solid angle from a light source in a certain direction. Luminance is the brightness per unit area of the light emitter. Therefore, the luminance value varies depending on the distance from the light source, but the luminous intensity does not vary depending on the distance from the light source. In the trimming process, it can be assumed that the distance from the light source to the photometer changes.

(Overcoat formation step (S7))
In this step, a resin film using an epoxy resin paste is formed so as to cover the trimming groove 23 formed in the trimming step, and the overcoat 20 is disposed. For this purpose, an epoxy resin is disposed in a band shape by screen printing so as to cover both of the trimming grooves 23 of the two resistance elements 3 per unit insulating substrate 4A previously formed, and is thermally cured.

(Division process (S8))
Next, the division process to be performed will be described. First, stress is applied in the direction of opening one of the vertical or horizontal dividing grooves of the linear dividing section 4B (dividing grooves) intersecting the vertical and horizontal directions of the large insulating substrate 4C with divided sections. Then, the alumina ceramic breaks along the line of the linear division part 4B. Along with this, the penetrating member dividing line 12E (dividing groove) of the large penetrating member 12D at the position overlapping the broken linear dividing portion 4B is also destroyed. As a result, a large number of strip-shaped substrates can be obtained. Hereinafter, this process is referred to as a primary division process.

  Next, the direction of opening the other through member separating line 12E (dividing groove) of the large insulating substrate 4C and the large penetrating member 12D, which is left on the strip-shaped substrate obtained as a result of the first dividing step. Stress. Then, the alumina ceramic is broken along the line of the linear division part 4B. At the same time, the dividing groove of the large penetrating member 12D at the position overlapping the broken linear dividing portion 4B is also destroyed. As a result, a large number of unit insulating substrates 4A with penetrating members 12, that is, light-emitting components 1 can be obtained. Hereinafter, this process is referred to as a secondary division process. This completes the dividing step.

  Here, the linear dividing portion 4B can be cut (divided) vertically and horizontally along the linear dividing portion 4B and the penetrating member dividing line 12E by using a dicing saw instead of the dividing groove. The division using the dicing saw can be performed for the primary and secondary divisions. Moreover, the division | segmentation using a dicing saw can be performed only about a primary division, and the method of giving stress so that the groove | channel for a division | segmentation may be employ | adopted about a secondary division. The method of applying stress so as to open the dividing grooves has an advantage that the manufacturing cost can be kept low. Further, the division using the dicing saw has an advantage that the division position accuracy is high and that the light emitting component 1 can be easily handled even when the light emitting component 1 is downsized. Further, when the division using a dicing saw is performed, the linear dividing portion 4B and the penetrating member dividing line 12E may not be grooves, and the linear dividing portion 4B and the penetrating member dividing line 12E are invisible. It may be.

  Further, the large penetrating member 12D may be provided with a thin portion having a reduced thickness along the horizontal direction of the linear dividing portion 4B and the penetrating member dividing line 12E formed vertically and horizontally in order to perform the dividing step with high accuracy. good. Moreover, in order to perform a division | segmentation process more accurately, it is preferable to provide not only the horizontal direction but the vertical direction. However, since the thin portion 12B does not contribute to the light emitting function of the light emitting component 1, it is preferable not to provide the thin portion 12B as much as possible in order to reduce the size of the light emitting component 1.

(Plating step (S9))
Next, nickel plating and solder plating are performed in this order on the surfaces of the external terminals 15 of the obtained many substrates 4. A nickel plating layer and a solder plating layer are respectively formed on the surfaces of the external terminals 15 by the barrel plating method described above. The thickness of the nickel plating layer and the solder plating layer is adjusted by adjusting the plating conditions such as the plating time and the temperature of the plating bath so as to be 3 μm to 12 μm, respectively. This completes the plating process. In addition, the manufacture of the light emitting component 1 is completed.

(Main effects obtained by the embodiment of the present invention)
The light-emitting component 1 can adjust the color mixture state of the light emitted from the plurality of LEDs 2 that emit light of different colors based on the applied voltage between the + input terminal 2A and the −input terminal 2B by the NPN transistor 5A. Since it is configured, the light emitting component 1 can adjust the emission color even after the light emitting component 1 is assembled. Therefore, it is possible to emit a color desired by the user. Therefore, the light-emitting component 1 is suitable for use in a lighting fixture that allows the user to select a favorite emission color. In addition, since the LED 2 and the resistive element 3 are arranged separately on the front and back surfaces of the substrate 4 in the light emitting component 1, the heat generation part is difficult to concentrate even if a plurality of LEDs 2 are arranged, and the heat dissipation efficiency is good. Become. Further, since the resistance elements 3 are arranged and arranged on the substrate 4, and only the resistance elements 3 are arranged on the back surface of the substrate 4, it becomes easy to manufacture a plurality of resistance elements in a collective manner. The resistance forming step (S1), the trimming step (S6), and the overcoat forming step (S7) can be easily performed, and the size of the resistance element 3 can be increased, so that the amount of heat generated by the resistance element 3 itself can be reduced. Is possible. Further, part of the electrical connection between the resistance element 3 and the LED 2 is made by the external terminal 15 located on the end face of the substrate 4, so that it is not necessary to provide the external terminal 15 separately, and the light emitting component 1 having a simple structure is obtained. Moreover, according to the manufacturing method of the light-emitting component 1 described above, since the resistance forming step (S1) is performed before the arrangement step (S2) and the wire bonding step (S3), the substrate is formed during the resistance forming step (S1). Even if there is a firing process in which 4 is exposed to a high temperature, the LED 2 and the NPN transistor 5A are not affected by the high temperature. Furthermore, since the light-emitting component 1 is manufactured using the large-sized insulating substrate 4C with divided portions and the large through-hole member 12D, the light-emitting component 1 can be efficiently manufactured.

(Other forms)
The light emitting component 1 according to the embodiment of the present invention has been described above, but various modifications can be made without departing from the gist of the present invention. For example, the penetrating member 12, the translucent sealing resin, the overcoat film 20, the nickel plating layer and the solder plating layer, and the resistance element 3 are not essential. Therefore, one or more of these may be omitted. Further, the resin sealing step (S5) and the plating step (S9) are not essential, and one or both may be omitted. Further, when LTCC is used for the substrate 4, the penetrating member fixing step (S4) is not essential and may be omitted. Furthermore, when the light emitting component 1 does not have the resistance element 3, the resistance forming step (S1), the trimming step (S6), and the overcoat forming step (S7) are not essential and may be omitted.

  The nonlinear element according to the embodiment of the present invention uses the NPN transistor 5A or the PNP transistor 5B, but is not limited thereto, and a diode, a Zener diode, a field effect transistor, or the like may be used. However, the use of the NPN transistor 5A or the PNP transistor 5B as the nonlinear element is advantageous in that the component cost can be kept low. Even when the NPN transistor 5A or the PNP transistor 5B is used as the non-linear element, the circuit employed by the light emitting component is not limited to the circuits 6A and 6B.

  In the manufacturing method described above, the components such as the LED 2 are arranged after the conductor is formed. However, after the components such as the LED 2 are arranged, the components may be connected with a gold wire or the like. Moreover, you may make it connect each component by all conductors, without using a gold wire etc.

  In addition, the light emitting component 1 is formed with bumps protruding from the conductor portion on the back surface side of the substrate 4 extending from the external terminal 15 so that the light emitting component 1 can be reliably mounted with a height higher than that of the overcoat 20 at the time of mounting. It is also good to do.

  Moreover, although the light emitting component 1 which concerns on embodiment of this invention was made into two colors, yellow and blue, as a luminescent color of LED2, as other colors, for example, three colors of red, blue, and green, as a full color light emitting component. Also good. Moreover, although the number of the light emitting elements with which the light emitting component 1 is provided is two, it is good also as other plural, such as three, four, five.

  Further, the plurality of LEDs 2 can select the luminous intensity as the product characteristic of the other light emitting elements in accordance with the luminous intensity as the product characteristic of one of the light emitting elements. By doing so, there is an advantage that the resistance value of the resistance element 3 can be significantly adjusted, or that the difference in the resistance value adjustment amount for each light emitting element can be avoided. For example, the light intensity of other light emitting elements can be selected in accordance with the light emitting element that has the lowest luminous intensity as a product characteristic. By doing so, in addition to the above-described advantages, the cost of the light emitting component can be reduced. This cost reduction effect can also be obtained for light-emitting components that are not related to the embodiment of the present invention.

It is a front view of the light emitting component which concerns on embodiment of this invention. It is a top view of the light emitting component shown in FIG. FIG. 2 is a bottom view of the light emitting component shown in FIG. FIG. 4 is a circuit configuration diagram of the light-emitting component shown in FIGS. 1 to 3, in which (A) shows an example using an NPN transistor as a nonlinear element, and (B) shows an example using a PNP transistor as a nonlinear element. It is. It is a flowchart of the manufacturing method of the light emitting component shown in FIGS. It is a figure which shows the member used for the manufacturing method of the light emitting component shown in FIGS. 1-3, (A) is a top view of the large sized insulated substrate with a division part, (B) has each shown the top view of the large sized penetration member. FIG. 4 is a simplified diagram showing an example of a trimming step in the method for manufacturing the light emitting component shown in FIGS. 1 to 3.

Explanation of symbols

1 Light-emitting parts (package light-emitting parts)
2A, 2C LED (first light emitting element)
2B, 2D LED (second light emitting element)
3A, 3C resistance element (first resistance element)
3B, 3D resistance element (second resistance element)
4 Substrate 5A NPN transistor (nonlinear element)
5B PNP type transistor (nonlinear element)
7A, 7B + input terminal 8A, 8B − input terminal 9A first transmission path 9B second transmission path 9C third transmission path 9D fourth transmission path (first transmission path)
9E Fifth transmission line (second transmission line)
9F Sixth transmission line (third transmission line)
10A, 10B contact

Claims (4)

In a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are arranged between input terminals that form a pair to which a voltage is applied.
A package light-emitting component characterized in that a mixed color state of light emitted from the plurality of light-emitting elements can be adjusted by a non-linear element based on an applied voltage between the paired input terminals. In a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are arranged between input terminals that form a pair to which a voltage is applied.
Between the pair of input terminals, the first transmission path and the second transmission path branch off,
In the first transmission path, a first light emitting element, an NPN transistor that is a nonlinear element, and a first resistance element are arranged in order from the plus side of the paired input terminals,
The NPN transistor is arranged such that the emitter is positioned on the minus side of the paired input terminal with respect to the collector,
In the second transmission line, a second resistance element and a second light emitting element are arranged in order from the plus side of the paired input terminals,
Package light emission characterized in that a third transmission path is connected to a base of the NPN transistor from a contact point between the second resistance element and the second light emitting element of the second transmission path. parts. In a package light-emitting component in which a plurality of light-emitting elements that emit light having different wavelengths are arranged between input terminals that form a pair to which a voltage is applied.
Between the pair of input terminals, the first transmission path and the second transmission path branch off,
In the first transmission path, a first resistance element, a PNP transistor that is a nonlinear element, and a first light emitting element are arranged in order from the plus side of the paired input terminals.
The PNP transistor is arranged such that the collector is positioned on the negative side of the paired input terminal with respect to the emitter,
In the second transmission path, a second light emitting element and a second resistance element are arranged in order from the plus side of the paired input terminal,
Package light emission characterized in that a third transmission path is connected to a base of the PNP transistor from a contact point between the second resistance element and the second light emitting element of the second transmission path. parts. A substrate on which the light emitting element, the nonlinear element, the first resistance element, and the second resistance element are disposed;
On the surface of the substrate, the light emitting element and the nonlinear element are arranged,
4. The package light-emitting component according to claim 2, wherein the first resistance element and the second resistance element are disposed on a back surface opposite to the front surface.

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