JP2008114336A - チャックテーブルのセルフグラインディング方法 - Google Patents
チャックテーブルのセルフグラインディング方法 Download PDFInfo
- Publication number
- JP2008114336A JP2008114336A JP2006300268A JP2006300268A JP2008114336A JP 2008114336 A JP2008114336 A JP 2008114336A JP 2006300268 A JP2006300268 A JP 2006300268A JP 2006300268 A JP2006300268 A JP 2006300268A JP 2008114336 A JP2008114336 A JP 2008114336A
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- Prior art keywords
- grinding
- chuck table
- self
- grinding wheel
- wafer
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- 238000000034 method Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000007767 bonding agent Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 description 8
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【解決手段】チャックテーブル2を回転させると共に研削ホイール33を回転させながら、駆動手段によって研削手段3をチャックテーブル2に接近させてチャックテーブル2の吸着面に研削砥石33bを接触させて研削し、吸着面20と研削砥石33bの研削面とが平行になるようにセルフグラインディングを遂行する際に、研削砥石33bとして、メタルボンド以外のボンド剤で形成される研削砥石を使用する。研削砥石33bに金属が含まれないため、セルフグラインディング時に吸着面20に金属が侵入することがなく、後のウェーハの研削時に吸着面20からウェーハに金属が侵入しない。
【選択図】図3
Description
2:チャックテーブル
20:吸着面 21:バルブ 22:水源 23:バルブ 24:吸引源
3:研削手段
30:スピンドル 31:スピンドルハウジング 32:ホイールマウント
33:研削ホイール
33a:基台 33b:研削砥石
4:駆動手段
40:ボールネジ 41:パルスモータ 42:ガイドレール 43:昇降板
44:支持部
Claims (3)
- ウェーハを保持する吸着面を有する回転可能なチャックテーブルと、環状に配設された研削砥石を有する研削ホイールが回転可能に支持されて構成される研削手段と、該チャックテーブルに対して該研削手段を相対的に接近または離反させる駆動手段とから少なくとも構成される研削装置における該チャックテーブルのセルフグラインディング方法であって、
該チャックテーブルを回転させると共に該研削ホイールを回転させながら、該駆動手段によって該研削手段を該チャックテーブルに接近させて該チャックテーブルの吸着面に該研削砥石を接触させて研削し、該吸着面と該研削砥石の研削面とが平行になるようにセルフグラインディングを遂行する際に、該研削砥石として、メタルボンド以外のボンド剤で形成される研削砥石を使用することを特徴とするチャックテーブルのセルフグラインディング方法。 - 前記研削砥石は、ダイヤモンド砥粒がビトリファイドボンドで焼結されて形成されている請求項1に記載のチャックテーブルのセルフグラインディング方法。
- 前記チャックテーブルの吸着面から水を噴出させながら該チャックテーブルの研削を遂行する請求項1または2に記載のチャックテーブルのセルフグラインディング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006300268A JP2008114336A (ja) | 2006-11-06 | 2006-11-06 | チャックテーブルのセルフグラインディング方法 |
TW096137058A TW200832536A (en) | 2006-11-06 | 2007-10-03 | Self-grinding method for chuck table |
KR1020070107134A KR20080041107A (ko) | 2006-11-06 | 2007-10-24 | 척 테이블의 셀프 그라인딩 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006300268A JP2008114336A (ja) | 2006-11-06 | 2006-11-06 | チャックテーブルのセルフグラインディング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008114336A true JP2008114336A (ja) | 2008-05-22 |
Family
ID=39500732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006300268A Pending JP2008114336A (ja) | 2006-11-06 | 2006-11-06 | チャックテーブルのセルフグラインディング方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008114336A (ja) |
KR (1) | KR20080041107A (ja) |
TW (1) | TW200832536A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013188836A (ja) * | 2012-03-14 | 2013-09-26 | Disco Corp | 保持テーブルの良否判断方法 |
CN103871911A (zh) * | 2012-12-10 | 2014-06-18 | 株式会社迪思科 | 器件晶片的加工方法 |
JP2015229206A (ja) * | 2014-06-04 | 2015-12-21 | 株式会社ディスコ | 保持治具及び板状物の加工方法 |
JP2018094671A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社ディスコ | 保持テーブルの保持面形成方法 |
JP2019130636A (ja) * | 2018-02-01 | 2019-08-08 | 株式会社ディスコ | 保持面の研削方法 |
JP2019133991A (ja) * | 2018-01-29 | 2019-08-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP2019177461A (ja) * | 2018-03-30 | 2019-10-17 | 株式会社ディスコ | 被加工物の研削方法 |
CN112092224A (zh) * | 2019-06-18 | 2020-12-18 | 株式会社迪思科 | 修正方法 |
CN112621474A (zh) * | 2020-12-15 | 2021-04-09 | 诸暨市昊和机械股份有限公司 | 一种铜套自动打磨设备 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6078297B2 (ja) * | 2012-10-31 | 2017-02-08 | 株式会社ディスコ | 加工装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000260738A (ja) * | 1999-03-10 | 2000-09-22 | Hitachi Ltd | 半導体基板の研削加工方法ならびに半導体装置および半導体装置の製造方法 |
JP2003045841A (ja) * | 2001-08-02 | 2003-02-14 | Disco Abrasive Syst Ltd | 吸着パッド洗浄装置及び該装置を用いた吸着パッド洗浄方法 |
JP2003340718A (ja) * | 2002-05-20 | 2003-12-02 | Tokyo Seimitsu Co Ltd | 研削装置 |
JP2004335540A (ja) * | 2003-04-30 | 2004-11-25 | Disco Abrasive Syst Ltd | 樹脂基板の研削方法 |
JP2005246519A (ja) * | 2004-03-02 | 2005-09-15 | Noritake Super Abrasive:Kk | レジンボンドホイール |
JP2005254343A (ja) * | 2004-03-09 | 2005-09-22 | Noritake Super Abrasive:Kk | ノッチホイール |
JP2006024814A (ja) * | 2004-07-09 | 2006-01-26 | Okamoto Machine Tool Works Ltd | 半導体基板の絶縁層の研削方法 |
JP2006203132A (ja) * | 2005-01-24 | 2006-08-03 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
-
2006
- 2006-11-06 JP JP2006300268A patent/JP2008114336A/ja active Pending
-
2007
- 2007-10-03 TW TW096137058A patent/TW200832536A/zh unknown
- 2007-10-24 KR KR1020070107134A patent/KR20080041107A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000260738A (ja) * | 1999-03-10 | 2000-09-22 | Hitachi Ltd | 半導体基板の研削加工方法ならびに半導体装置および半導体装置の製造方法 |
JP2003045841A (ja) * | 2001-08-02 | 2003-02-14 | Disco Abrasive Syst Ltd | 吸着パッド洗浄装置及び該装置を用いた吸着パッド洗浄方法 |
JP2003340718A (ja) * | 2002-05-20 | 2003-12-02 | Tokyo Seimitsu Co Ltd | 研削装置 |
JP2004335540A (ja) * | 2003-04-30 | 2004-11-25 | Disco Abrasive Syst Ltd | 樹脂基板の研削方法 |
JP2005246519A (ja) * | 2004-03-02 | 2005-09-15 | Noritake Super Abrasive:Kk | レジンボンドホイール |
JP2005254343A (ja) * | 2004-03-09 | 2005-09-22 | Noritake Super Abrasive:Kk | ノッチホイール |
JP2006024814A (ja) * | 2004-07-09 | 2006-01-26 | Okamoto Machine Tool Works Ltd | 半導体基板の絶縁層の研削方法 |
JP2006203132A (ja) * | 2005-01-24 | 2006-08-03 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013188836A (ja) * | 2012-03-14 | 2013-09-26 | Disco Corp | 保持テーブルの良否判断方法 |
CN103871911A (zh) * | 2012-12-10 | 2014-06-18 | 株式会社迪思科 | 器件晶片的加工方法 |
JP2015229206A (ja) * | 2014-06-04 | 2015-12-21 | 株式会社ディスコ | 保持治具及び板状物の加工方法 |
JP2018094671A (ja) * | 2016-12-13 | 2018-06-21 | 株式会社ディスコ | 保持テーブルの保持面形成方法 |
JP2019133991A (ja) * | 2018-01-29 | 2019-08-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP7009234B2 (ja) | 2018-01-29 | 2022-01-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP2019130636A (ja) * | 2018-02-01 | 2019-08-08 | 株式会社ディスコ | 保持面の研削方法 |
JP7048335B2 (ja) | 2018-02-01 | 2022-04-05 | 株式会社ディスコ | 保持面の研削方法 |
JP2019177461A (ja) * | 2018-03-30 | 2019-10-17 | 株式会社ディスコ | 被加工物の研削方法 |
JP7126751B2 (ja) | 2018-03-30 | 2022-08-29 | 株式会社ディスコ | 被加工物の研削方法 |
CN112092224A (zh) * | 2019-06-18 | 2020-12-18 | 株式会社迪思科 | 修正方法 |
CN112621474A (zh) * | 2020-12-15 | 2021-04-09 | 诸暨市昊和机械股份有限公司 | 一种铜套自动打磨设备 |
Also Published As
Publication number | Publication date |
---|---|
TW200832536A (en) | 2008-08-01 |
KR20080041107A (ko) | 2008-05-09 |
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