JP2008078058A - Electron beam device and pattern evaluation method using this - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam device capable of correcting an on-axis chromatic aberration of a plurality of electron beams as well as lowering astigmatism and deflection aberration, and a pattern evaluation method using the same. <P>SOLUTION: The electron beam device is provided with an electron gun emitting primary electron beams, a multi-aperture board with a plurality of apertures through which a part of the primary electron beams pass, a primary optical system equipped with a condenser lens for contracting the primary electron beams passing the apertures and an objective lens for forming images of the contracted primary electron beams on the surface of a sample, a deflector group deflecting secondary electron beams emitted from the sample, and a magnifying lens magnifying secondary electron beams deflected at the deflector group, and a secondary optical system equipped with a secondary electron beam detector for detecting the magnified secondary deflector group. An on-axis chromaticity aberration correcting lens made of a non-distributing Vienna filter generating the on-axis chromaticity aberration corresponding to that generated at the objective lens is provided at the primary optical system. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electron beam apparatus and a pattern evaluation method for performing pattern evaluation of a sample having a pattern with a minimum line width of 0.1 μm or less using an electron beam with high throughput and high reliability.

  Conventionally, multiple primary electron beams are narrowed down to scan the surface of the sample. Secondary electron beams emitted from the scanning point are deflected in the direction of the secondary optical system by a beam separator and detected by multiple detectors. An apparatus for performing pattern evaluation by doing so is known.

  In pattern evaluation, aberration correction is a problem. In this regard, an image point or object point of the primary electron beam is formed on one end face of the Wien filter, and the object point or image point of the objective lens is A theoretical analysis is known that axial chromatic aberration can be corrected by disposing the objective lens so as to be located on the other end surface.

  In addition, an electron beam apparatus that corrects axial chromatic aberration and spherical aberration generated in an axially symmetric lens system using a non-axisymmetric optical element such as a multipole electrode or a multipole magnetic pole is also known. In the electron beam apparatus according to the prior art, the axial chromatic aberration and the spherical aberration are corrected using the non-axisymmetric optical element, so that a high-resolution electron beam apparatus can be realized.

  Moreover, in electron beam apparatuses that perform pattern evaluation using an electron beam, those having a Schottky cathode electron gun as an electron beam source have been mainstream.

  Incidentally, the conventional electron beam apparatus has various problems. First, when the primary electron beam is narrowed down, the axial chromatic aberration increases and the focal point is not focused at one point, so that a large beam current cannot be obtained. In addition, astigmatism, deflection chromatic aberration, and the like that occur when the secondary electron beam is separated from the primary electron beam are problematic.

  Here, chromatic aberration refers to a phenomenon in which an image is blurred during imaging because the energy (velocity) of the electron beam has a spread (width) due to various factors and the refraction angle at the lens varies depending on the velocity. In addition, astigmatism is an aberration caused by the fact that the electromagnetic lens (objective lens) does not have perfect axial symmetry, etc. This aberration is asymmetric (not a perfect circle) of the hole in the lens pole piece, material This is caused by magnetic inhomogeneity of the lens, electrification of the diaphragm, etc. Further, deflection chromatic aberration is an aberration that occurs when an electron beam is deflected, and is a phenomenon in which an image blurs due to a difference in the degree of deflection caused by a difference in energy (velocity) of the electron beam.

  The present invention has been made in view of the above problems, and provides an electron beam apparatus capable of correcting axial chromatic aberration of a plurality of electron beams and reducing astigmatism and deflection aberration, and a pattern evaluation method using the same. With the goal.

  Second, in an electron beam apparatus using a single electron beam, it is conceivable to increase the electron beam current as a means for improving the throughput. However, if the electron beam current is increased, the electron beam spreads due to the space charge effect, which causes a problem that it cannot be narrowed down.

  In addition, when the sample is irradiated with a plurality of electron beams simultaneously, there is a problem that the total electron beam current cannot be increased too much. This is because when a plurality of electron beams are formed in the vicinity of the optical axis and narrowed down and simultaneously scanned at a plurality of locations to detect secondary electrons emitted from each scanning point, the space charge effect has a high intensity. Although not as much as in the case of a book of electron beams, these multiple electron beams gather at one location at the crossover, so that the total electron beam current increases and eventually the space charge effect at the crossover is reduced. It is because it is not possible.

  An object of the present invention is to provide a highly reliable electron beam apparatus that reduces the space charge effect and a pattern evaluation method using the same.

  Third, a general Wien filter may form object points and image points on both end faces in the optical axis direction. In such a Wien filter, an auxiliary lens is provided near an object point or an image point. When providing an auxiliary lens, it is necessary to provide a two-stage deflector along the optical axis in order to align the end face of the Wien filter with the auxiliary lens. On the other hand, in order to provide a two-stage deflector, the focal length of the auxiliary lens must be increased.

  Another possible method is to make the distance between the object point and the image point of the non-dispersive Wien filter longer than the distance between both end faces in the optical axis direction of the Wien filter. However, when using a plurality of primary electron beams, or when using a primary electron beam deviated from the optical axis as in the case of a mapping projection optical system, a large aberration occurs, and a solution for reducing this. There was no.

  The present invention has been made in view of the above problems, and it is possible to secure a space for providing a two-stage deflector for alignment on the upstream side and the downstream side of the Wien filter, and at a position deviated from the optical axis. An object of the present invention is to provide an aberration correction lens mechanism capable of correcting the aberration of the primary electron beam and a pattern evaluation method using the same.

  Fourth, in order to appropriately correct aberrations, the voltage fluctuations applied to these multipole electrodes need to have an accuracy of less than 1 ppm. Also, the fluctuation of the current for exciting the multipole magnetic pole needs to have an accuracy of less than 1 ppm. Furthermore, the processing accuracy and assembly accuracy of the electromagnetic poles used for these multipole electrodes and multipole magnetic poles are also required to be as high as 1 μm or less. Due to the necessity of such a high-precision power source and high-precision processing / assembly, there has been a problem that the electron beam apparatus itself becomes very expensive.

  The present invention has been made in view of such problems, and an electron beam in which axial chromatic aberration or spherical aberration is appropriately corrected even with a power supply fluctuation of about 10 ppm and an assembly / processing accuracy of about several μm. An object is to provide an apparatus and a fine pattern evaluation method using the same.

  Fifth, in the electron beam apparatus using a plurality of electron beams as described above, when the sample surface is scanned with a plurality of electron beams, the electrons at the imaging point of the emitted secondary electron beam are near the edge of the field of view. There is a large difference in the line spread between the scanning direction and the right-left direction. If the plurality of electron beams are arranged at equal pitches in the X-axis and Y-axis directions, the interval becomes too large, and many electron beams are There was a problem that it could not be placed on the optical axis.

  Moreover, there is no suitable detector for detecting a plurality of electron beams when the shape of the electron beam is elliptical.

  Further, when the secondary electron beam image is also separated by the beam separator, there is a problem that the deflection chromatic aberration becomes a non-negligible amount.

  In view of the above problems, the present invention has a problem that a scintillator that obtains an optical signal from an electron beam has a small optical signal when the energy of the electron beam is small. The object of the present invention is to provide means for individually solving the above problems.

  Sixth, since a Schottky cathode electron gun generally has high luminance, it is characterized in that a relatively large beam current can be obtained with a small beam diameter. By the way, since the Schottky cathode electron gun has a large shot noise, it is necessary to perform pattern evaluation with a large beam current. However, when the sample is irradiated with an electron beam with a large beam current, problems such as deformation of the resist pattern and damage to the gate oxide film occur.

  There is also a method of obtaining a large beam current with a small-sized beam using a lens that corrects longitudinal chromatic aberration. However, since the aperture angle is increased here, there is a problem in that a large defocus occurs when the sample position slightly varies along the optical axis. Further, when such an axial chromatic aberration correction lens is inserted into the optical system, there is a problem that the optical path length becomes long and the beam is blurred due to the space charge effect.

  The present invention has been made in view of the above-described problems, and is an electron beam having an electron optical system that can operate with a larger NA for correcting axial chromatic aberration with an electron gun having a small shot noise, and that has a shorter optical path length. An object is to provide an apparatus and a pattern evaluation method using the same.

  The present invention has been made in view of the above-described object, and has an electron gun that emits a primary electron beam and a plurality of openings through which a part of the primary electron beam passes in response to the first problem. A primary optical system comprising a multi-aperture plate, a condenser lens for reducing the primary electron beam passing through the opening, and an objective lens for forming an image of the reduced primary electron beam on the sample surface; A second electron beam detector comprising: a deflector group that deflects a secondary electron beam; a magnifying lens that magnifies a secondary electron beam deflected by the deflector group; and a secondary electron beam detector that detects the magnified secondary electron beam. A primary optical system, and the primary optical system includes an axial chromatic aberration correction lens including a non-dispersive Wien filter that generates axial chromatic aberration corresponding to axial chromatic aberration generated in the objective lens. .

  The Wien filter includes a plurality of electromagnetic poles extending radially from the optical axis of the primary electron beam, and each electromagnetic pole includes a first electromagnetic pole portion extending in a fan shape from the vicinity of the optical axis, and the first electromagnetic pole portion. The second electromagnetic pole portion extending from the end portion with a certain thickness and the third electromagnetic pole portion extending in the circumferential direction from the end portion of the second electromagnetic pole portion are employed.

  The deflector group includes two deflectors, the first deflector deflects both the primary electron beam and the secondary electron beam, and the second deflector deflects only the secondary electron beam. Is adopted.

  Furthermore, a pattern evaluation method using an electron beam, wherein a plurality of primary electron beams are formed by irradiating a plurality of openings with a primary electron beam emitted from the electron beam, and the plurality of primary electron beams are reduced. A negative axial chromatic aberration corresponding to the positive axial chromatic aberration generated in the objective lens is generated through the axial chromatic aberration correction lens, and the primary electron beam is deflected by an electrostatic deflector and an electromagnetic deflector to the sample surface. The primary electron beam directed perpendicularly to the sample is reduced by the objective lens while scanning the surface of the sample, and the secondary electron beam emitted from the sample is deflected by two deflectors. A configuration is adopted in which deflection is performed toward a secondary optical system by a device group, and the deflected secondary electron beam is detected by a secondary electron beam detector.

  Further, in response to the second problem, in the present invention, an electron gun that emits a primary electron beam, a condenser lens that reduces the primary electron beam, and a plurality of reduced primary electron beams pass through. In the electron beam apparatus including a multi-aperture plate having an aperture and an objective lens that forms an image of a plurality of primary electron beams formed by the multi-aperture plate on a sample surface, the condenser lens is far from the optical axis due to spherical aberration. The primary electron beam is configured to form a crossover at a predetermined position near the electron gun.

  Further, the angle between the optical axis direction and the direction of the opening formed on the outermost side of the multi-aperture plate is larger than a predetermined value with the crossover position as a reference.

  In addition, when the aperture of the condenser lens is D and the distance between the openings at both ends of the multi-aperture plate is d, the condition that 1 <D / d ≦ 3 is satisfied.

  Further, the primary optical system is set so that the arrangement of the primary electron beams on the surface of the sample is distorted into a barrel when the openings are arranged in a lattice pattern at predetermined intervals on the multi-aperture plate. The structure is adopted.

  Further, the multi-aperture plate has a configuration in which the openings are arranged in a pincushion-like state so as to correct the distortion of the barrel.

  Further, in response to the third problem, in an aberration correction lens mechanism including an on-axis chromatic aberration correction lens and an objective lens arranged along the optical axis, the position of the image point or object point of the objective lens Both lenses are arranged so that the position of the object point or image point of the axial chromatic aberration correction lens coincides, and the first and second surfaces are located at the image point and object point of the axial chromatic aberration correction lens. It has a configuration in which an auxiliary lens is further provided.

  Further, in the aberration correction lens mechanism that corrects longitudinal chromatic aberration or spherical aberration using a Wien filter, the distance between the object point and the image point of the Wien filter is made longer than the distance between both end faces in the optical axis direction of the Wien filter, The configuration is such that the trajectory of the principal ray of the primary electron beam from an object point away from the optical axis is controlled to be a point-symmetric trajectory with respect to the intermediate point of the Wien filter.

  Further, in the aberration correction lens mechanism that corrects longitudinal chromatic aberration or spherical aberration using a Wien filter, the distance between the object point and the image point of the Wien filter is made longer than the distance between both end faces in the optical axis direction of the Wien filter, Crossover images are formed at two locations at equal distances in the optical axis direction from the intermediate surface of the Wien filter, and the Z-direction position at which the crossover is formed is controlled by an auxiliary lens provided at the object point of the Wien filter. , Is adopted.

  Further, in an aberration correction lens mechanism including an axial chromatic aberration correction lens and an objective lens arranged along the optical axis, the position of the image point or the object point of the objective lens and the object point or the object of the axial chromatic aberration correction lens Both lenses are arranged so that the position of the image point coincides, the axial chromatic aberration correction lens is constituted by a two-stage Wien filter, and an image point is formed at an intermediate point in the optical axis direction between the Wien filters. The crossover image is formed at two locations at equal distances from the intermediate point in the optical axis direction.

  Further, a method of performing pattern evaluation using a plurality of primary electron beams by the aberration correction lens mechanism arranged on both the lenses so that the position of the image point of the aberration correction lens and the position of the object point of the objective lens coincide with each other A step of irradiating a plurality of apertures with the primary electron beam to generate a plurality of primary electron beams, and a step of focusing the primary electron beams to form a plurality of aperture images at object points of an aberration correction lens. Forming first and second crossover images at equal distance positions with respect to the intermediate surface of the aberration correction lens by a first auxiliary lens provided at an object point of the aberration correction lens; and Focusing and scanning the primary electron beam on the sample surface, and deflecting a plurality of secondary electron beams emitted from the surface of the sample toward the secondary optical system with a beam separator; A step of enlarging the mutual distance of the deflected plurality of the secondary electron beam, and detecting the respective secondary electron beam spacing is enlarged, it adopts a configuration that.

  Further, in response to the fourth problem, in an electron beam apparatus that can correct axial chromatic aberration or spherical aberration using a multipole lens, this lens is generated due to fluctuations in the power supply for driving the lens or poor processing accuracy of the lens. The reduction ratio of the optical system from the image surface of the multipole lens to the sample surface is determined so that the blur of the electron beam caused by the above is sufficiently reduced on the sample surface.

  An electron beam apparatus that uses a multipole lens to correct axial chromatic aberration or spherical aberration generated in an axially symmetric optical system in an electron beam apparatus that expands and detects a secondary electron beam emitted from a sample with an expansion optical system The image of the necessary resolution dimension of the sample on the object surface of the multipole lens is sufficiently larger than the blur of the electron beam caused by the accuracy of the power source driving the multipole lens or the processing accuracy of the lens. It has been configured to be.

  Further, a method for evaluating a fine pattern on a sample surface, the step of calculating blur caused by a multipole lens generated based on fluctuations of a power source connected to the multipole lens, and determining a pixel size on the surface of the sample A step of calculating a ratio between the calculated blur value by the multipole lens and a pixel size value, and a magnification of the optical system from the image plane of the multipole lens to the sample surface larger than the ratio It has a configuration of “Yes”.

  The multipole lens is a Wien filter, and the Wien filter has a configuration in which the dimension in the optical axis direction is ½ or less of the distance from the object point to the image point.

  Further, the optical system has a configuration in which the magnification is 1/5 times or less.

  Corresponding to the fifth problem, the present invention is an apparatus for evaluating a sample by irradiating a sample with a plurality of electron beams and detecting a secondary electron beam emitted from the sample. The plurality of electron beams are electrically scanned in the direction, the sample stage is mechanically scanned in the direction of the other axis orthogonal to the one axis direction, and the arrangement interval of the plurality of beams is a direction close to the electric scanning direction. Is configured to be wide and narrow in the direction close to the mechanical scanning direction.

  Also, a detector for detecting a plurality of electron beams, an optical fiber whose tip is ground into a rectangle or a square and a plurality of bundles are bundled and joined, a scintillator applied to the tip of the optical fiber, and the optical fiber It has the structure of having a photomaru connected to the other end.

  Further, a separator for separating a plurality of secondary electron beams emitted from the sample, an electrostatic lens for reducing or enlarging the separated secondary electron beams, and the secondary electron beams reduced or enlarged are vertically And a detector for detecting the deflected secondary electron beam.

  Furthermore, there is a method for detecting a secondary electron beam emitted from a sample, the step of separating the secondary electron beam emitted from a plurality of scanning points from the primary electron beam by a beam separator, and the separated secondary electron beam The configuration includes a step of enlarging a line with a lens and forming an image on a detection surface, and a step of applying a positive high voltage to the detection surface.

  Further, in response to the sixth problem, the present invention provides an apparatus for evaluating a sample by irradiating a sample with an electron beam and detecting secondary electrons emitted from the sample. A secondary electron optical system, an axial chromatic aberration correction lens, an objective lens composed of an electrostatic lens, and a beam separator. The beam separator is a metal cylinder having a bore diameter equal to or larger than the bore diameter of the objective lens. It is configured to be formed on the outside.

  Further, in an apparatus for irradiating a sample with an electron beam and detecting secondary electrons emitted from the sample to evaluate the sample, a primary electron optical system, a secondary electron optical system, an axial chromatic aberration correction lens, an objective lens, A configuration is adopted in which a beam separator is provided, the position of the sample surface in the Z direction is measured prior to the evaluation of the sample, and the sample is evaluated while dynamically adjusting the focus.

  Further, it is an apparatus that irradiates a sample having a pattern with an electron beam and measures the line width of the sample, and has a configuration including a LaB6 electron gun and an axial chromatic aberration correction lens.

Further, the electron gun is operated under a space charge limiting condition, and a local irradiation amount of the sample is set to 1 μc / cm ² or less.

  An apparatus for irradiating a sample with an electron beam to evaluate the sample, including a Wien filter for correcting axial chromatic aberration, a ring-shaped part having the same diameter as the Bohr diameter of the Wien filter, and A configuration is adopted in which an axial deflector having the same diameter as the part is included.

  According to the present invention, axial chromatic aberration can be corrected and astigmatism and deflection aberration can be reduced in a so-called multi-beam electron beam apparatus using a plurality of electron beams.

  Further, even if the number of primary electron beams is set to 10 or more, the space charge effect can be made relatively small.

  In addition, it is possible to secure a space for providing a two-stage deflector for alignment on the upstream side and downstream side of the Wien filter, and it is also possible to correct the aberration of the primary electron beam at a position deviated from the optical axis.

  In addition, the requirement for manufacturing accuracy of the aberration correction lens is relaxed, and strict power supply accuracy is not required.

  Furthermore, by correcting axial chromatic aberration with an electron gun with low shot noise, it is possible to realize an electron beam apparatus having an electron optical system that can operate with a large NA and has a short optical path length.

[First Embodiment]
[Overview]
FIG. 1 is a schematic view showing an electron beam apparatus EB1 according to the first embodiment of the present invention. This electron beam apparatus EB1 also serves as a primary optical system in order from the upstream side of the electron beam E, the electron gun 1, the multi-aperture plate 2, the reduction lenses 3 and 4, the axial chromatic aberration correction lenses 5 and 6, and the electrostatic deflector. A first scanning deflector 7a, a permalloy pipe 21, a beam separator 8, an electrostatic deflector 7b, and an objective lens 9 are provided. A sample 10 is disposed downstream of the objective lens 9. On the other hand, as the secondary optical system, the beam separator 8, the deflector 11, the secondary optical system lens 12, and the magnifying lens 13 are arranged in order from the sample 10, and the secondary electron beam detector 14 is arranged on the most downstream side. Is arranged.

[Electron gun]
The electron gun 1 is provided with a CeB6 single crystal cathode, and its tip has a sharp shape with a radius of 15 μm, so that a high-luminance primary electron beam can be obtained. Here, the brightness is the brightness of the electron gun 1 expressed as a current density per unit solid angle, and the brightness becomes higher as the tip of the cathode is thinner.

[Multi aperture plate]
A multi-opening plate 2 is provided on the downstream side of the electron gun 1. The multi-aperture plate 2 is for generating a plurality of primary electron beams from the primary electron beams emitted from the electron gun 1. For this reason, a large number of openings are formed in the multi-opening plate 2.

[Reduction lens]
On the downstream side of the multi-aperture plate 2, reduction lenses 3 and 4 are provided. The reduction lenses 3 and 4 are used for focusing a plurality of primary electron beams. In the present embodiment, two reduction lenses 3 and 4 are arranged along the optical axis. Here, in the present embodiment, when the highest intensity portion (near the optical axis) of the primary electron beam emitted from the electron gun 1 is used as a reference, the emission has an intensity distribution of 90% or more with respect to the electron beam intensity. The angle was 2 mrad (half angle). For this reason, when the position of a radius of 100 μm from the optical axis of the multi-aperture plate 2 is the outermost periphery with an electron beam intensity of 90% or more, the distance between the electron gun 1 and the multi-aperture plate 2 is calculated by the following formula: it can.

［軸上色収差補正レンズ］
軸上色収差補正レンズ５と６は相互に同じ構造を有しており、磁気コア１５によって上下に連結され、これらにより非分散ウィーンフィルタを構成している。各軸上色収差補正レンズ５，６には，図２に示すような概ね扇形の電磁極５ａが複数組設けられ、これらが組み合わされて各軸上色収差補正レンズ５，６を構成するようになっている。本実施形態の各軸上色収差補正レンズ５，６では、それぞれ１２極の電磁極５ａが設けられている。

[Axial chromatic aberration correction lens]
The axial chromatic aberration correction lenses 5 and 6 have the same structure and are connected up and down by a magnetic core 15 to form a non-dispersive Wien filter. Each of the axial chromatic aberration correction lenses 5 and 6 is provided with a plurality of sets of generally sector-shaped electromagnetic poles 5a as shown in FIG. 2, and these are combined to constitute the axial chromatic aberration correction lenses 5 and 6. ing. In each of the axial chromatic aberration correction lenses 5 and 6 of this embodiment, 12 electromagnetic poles 5a are provided.

  Next, a specific structure of the electromagnetic pole 5a will be described with reference to FIG. The electromagnetic pole 5 a includes a first electromagnetic pole portion 19, a second electromagnetic pole portion 20, and a third electromagnetic pole portion 18. The first electromagnetic pole portion 19 is a portion closest to the optical axis P and has a cross-sectional shape extending from the optical axis P in a fan shape. The second electromagnetic pole portion 20 has a parallel shape with a substantially constant cross-sectional thickness. Further, the third electromagnetic pole portion 18 has an arcuate cross-sectional shape extending in the circumferential direction so that a sufficient screw spacing in the circumferential direction can be secured when the third electromagnetic pole portion 18 is joined to the magnetic core 15 by the screw 17. The first electromagnetic pole portion 19 and the second electromagnetic pole portion 20 are connected, and further, the second electromagnetic pole portion 20 and the third electromagnetic pole portion 18 are connected. An exciting coil 23 is wound around the second electromagnetic pole portion 20. The magnetic flux generated by the exciting coil 23 is effectively formed near the optical axis P. An insulating spacer 16 is disposed outside the third electromagnetic pole portion 18 and is fixed to the magnetic core 15 via the insulating spacer 16. A normal fixing screw 17 is used for fixing to the magnetic core 15. The fixing screw 17 is insulated from the core 15. After all the electromagnetic poles 5a are fixed to the magnetic core 15, only the bore part and the first electromagnetic pole part 18 near the optical axis P are finally processed.

[Electrostatic deflector]
The deflectors 7a and 7b disposed on the downstream side of the axial chromatic aberration correction lenses 5 and 6 are general electrostatic deflectors, and deflect the primary electron beam. In particular, the deflector 7 a is an auxiliary deflector for the beam separator 8.

[Beam separator]
The beam separator 8 is composed of an electromagnetic deflector. A donut-shaped permalloy ring is formed, and one end of the ring is processed to have a home base shape, and a magnetic gap having a width of about 2 mm is processed and excited. The coil 8a is wound around. A permalloy tube 21 is provided along the optical axis on the upstream side (electron gun side) of the beam separator 8. A primary electron beam passes through the hollow interior of the permalloy tube 21. This permalloy tube has a role of a shield that prevents a magnetic field leaking from the electromagnetic deflector 11 from leaking into the path of the primary electron beam.

[Electromagnetic deflector]
The electromagnetic deflector 11 also forms a donut-shaped permalloy ring as shown in FIG. 3, and one end thereof is processed so as to have a deformed pentagonal cross section, a magnetic gap G having a width of about 2 mm is processed, and the exciting coil 11a Is wrapped around. FIG. 3C shows a state where the electromagnetic deflector 11 is viewed from above. An exciting coil 11a is wound around the magnetic circuit in a structure in which parallel magnetic gaps indicated by reference numeral G are connected by a permalloy magnetic circuit 11b.

[Secondary optical lens]
On the downstream side of the electromagnetic deflector 11, secondary optical system lenses 12 and 13 are provided along the optical axis of the secondary electron beam.

[Secondary electron beam detector]
A secondary electron beam detector 14 is provided on the most downstream side of the secondary optical system. The secondary electron beam detector 14 is for detecting the secondary electron beam emitted from the sample 10 and observing the state of the sample surface.

[Action]
Next, the operation of the electron beam apparatus EB1 will be described. First, the primary electron beam emitted from the electron gun 1 is irradiated onto the multi-aperture plate 2. The primary electron beam passes through a large number of openings of the multi-aperture plate 2 to generate a plurality of primary electron beams.

  The primary electron beam generated by the multiple apertures of the multi-aperture plate 2 is reduced by the two reduction lenses 3 and 4. The reduced primary electron beam is imaged at the object point 25 of the upstream axial chromatic aberration correction lens 5. Here, by changing the position of the reduced image formed between the reduction lenses 3 and 4 in the Z-axis direction, the reduction rate of the primary electron beam can be freely changed.

  The primary electron beam formed at the object point 25 of the axial chromatic aberration correction lens 5 made of a Wien filter is incident on the axial chromatic aberration correction lens 5 while spreading. The incident primary electron beam is focused by the lens action of the axial chromatic aberration correction lens 5 and imaged at a point 27. Further, the primary electron beam that has passed through the point 27 is incident on the downstream axial chromatic aberration correction lens 6 while spreading. The primary electron beam incident on the axial chromatic aberration correction lens 6 is also subjected to a lens action and is imaged at a point 29.

  As described above, by using two Wien filters as the axial chromatic aberration correction lenses 5 and 6, an image of the same magnification is formed at the point 27 and the point 29, and the primary aberration having a negative axial chromatic aberration at the point 29. An electron beam is formed. The axial chromatic aberration generated at this point 29 is set so as to be equal in magnitude to the positive axial chromatic aberration generated in the objective lens 9. This is because by generating axial chromatic aberration that is equal in magnitude and opposite in sign to the axial chromatic aberration generated in the objective lens 9, the axial chromatic aberration of the primary electron beam is canceled on the sample surface through the objective lens 9. Because.

  The plurality of primary electron beams that have passed through the point 29 are deflected by the electrostatic deflector 7 a and pass through the permalloy tube 21. The primary electron beam that has passed through the permalloy tube 21 is deflected perpendicularly to the surface of the sample 10 by the beam separator 8 that is an electromagnetic deflector, and then further reduced by the objective lens 9 to focus on the surface of the sample 10. . At this time, since the above-described permalloy pipe 21 is arranged on the upstream side of the beam separator 8, the leakage magnetic field from the electromagnetic deflector 11 does not affect the primary electron beam due to its shielding action. Yes.

  The surface of the sample 10 is scanned by deflecting it in two stages with the electrostatic deflector 7a and the electrostatic deflector 7b arranged upstream of the objective lens 9. By setting the deflection fulcrum at this time immediately above the main surface of the objective lens 9, the deflection chromatic aberration and coma aberration can be minimized. This is because the aberration caused by the deflectors 7a and 7b and the aberration caused by the objective lens 9 are partially offset.

  The electromagnetic deflector 8 also serves as the beam separator 8, and the magnetic pole has a parallel surface of the home base-shaped cross section shown in FIG. 1, and the parallel surfaces are connected by a permalloy magnetic circuit.

  The secondary electron beam emitted from the sample 10 is focused by the objective lens 9, slightly deflected by the beam separator 8 and separated from the primary electron beam, and then deflected by the electromagnetic deflector 11 until a predetermined angle is reached. The The secondary electron beam deflected by the electromagnetic deflector 11 is transmitted through the secondary optical system lens 12, and the mutual interval between the plurality of secondary electron beams emitted from the scanning point is further expanded by the magnifying lens 13. Each secondary electron beam is imaged and detected by the secondary electron beam detector 14.

[Second Embodiment]
FIG. 4 is a schematic view showing an electron beam apparatus EB2 according to the second embodiment of the present invention. 1 having the same or similar functions as those shown in FIG. 1 are denoted by the same reference numerals as those in FIG. In the electron beam apparatus EB2, the axial chromatic aberration correction lens 5b includes a one-stage Wien filter, unlike the case of FIG. In the electron beam apparatus EB2, an auxiliary lens 38 is provided at the image point 22 of a reduction lens (not shown), and the crossover due to the primary electron beam is set in the axial chromatic aberration correction lens 5b by appropriately setting the lens conditions. The fixed points 39 and 40 are formed. That is, if the crossover is formed at the point 39 by the auxiliary lens 38, the axial chromatic aberration correction lens 5b forms the crossover at the point 40. As a result, the orbit 36 of the principal ray of the primary electron beam outside the optical axis is made symmetric vertically with respect to the intermediate point 27 of the axial chromatic aberration correction lens 5b. Here, reference numeral 37 denotes a trajectory of the primary electron beam emanating from the image point 22, and reference numeral 36 denotes a principal ray trajectory from a predetermined image height (image height from the optical axis) position at the image point 22. .

  An auxiliary lens 41 is also provided at the image point 29 of the axial chromatic aberration correction lens 5b so that a crossover is formed near the main surface of the objective lens 9 without affecting the image formation of the primary electron beam. . The primary electron beam from the image point 29 of the axial chromatic aberration correction lens 5b is further reduced by the objective lens 9 to form a multi-beam on the surface of the sample 10, and the sample 10 is formed by the two-stage electrostatic deflectors 7a and 7b. The surface is scanned. An axially symmetric cylindrical electrode 35 is disposed in the vicinity of the surface of the sample 10. By applying a positive high voltage to the cylindrical electrode 35, coma aberration and deflection chromatic aberration can be reduced. This is because the value of [electron beam velocity / electron beam width] increases in the region where the lens action occurs due to the cylindrical electrode 35, and as a result, the aberration decreases. In addition, if a ferromagnetic material that is not axially symmetric is placed inside the objective lens 9, there is a possibility of increasing the aberration, so that beam separation is performed so that the axial magnetic distribution of the objective lens 9 does not have two peaks. As the device, an electromagnetic deflector 31 having the inner surface of the objective lens 9 as a core is used.

  The secondary electron beam emitted from the surface of the sample 10 is focused by the objective lens 9, deflected in the optical axis direction by the electrostatic deflector 7b, and then moved to the electromagnetic deflector 11 side (right side in the figure) by the beam separator 31. Slightly deflected, greatly deflected by the electromagnetic deflector 11 provided at a position some distance from the optical axis, and incident on the secondary optical system lenses 12 and 13.

  The objective lens 9 includes a vacuum seal member 45 and an O-ring 47, and a magnetic gap 49 is formed.

  In the embodiment disclosed in FIG. 1, non-axisymmetric parts such as the deflectors 8 and 11 are arranged in the vicinity of the objective lens 9, but in the second embodiment, the non-ferromagnetic material is not inside the objective lens 9. It is not necessary to insert axisymmetric parts, and the occurrence of aberration can be minimized.

  The electromagnetic pole 5a used in the on-axis chromatic aberration correction lens of the present invention has a shape composed of a first electromagnetic local part 19 passing through the optical axis and a second electromagnetic pole part 20 having a substantially constant thickness. The axial distributions of the electric field and magnetic field agree well with each other.

  Further, since the beam separator 8 for slightly deflecting and the electromagnetic deflector 11 for largely deflecting are separately used for separating the electron beams, the respective structures are simplified, and the permalloy tube 21 for the magnetic shield is used. It became easy to provide.

[Third Embodiment]
[Overview]
FIG. 5 is a schematic view showing an electron beam apparatus EB3 according to the third embodiment of the present invention. This electron beam device EB3 is an electron gun 201, condenser lenses 202 and 203, a multi-aperture plate 204, a reduction lens 206, an electrostatic deflector 208, a beam separator 209, in order from the upstream side of the electron beam E as a primary optical system. An electrostatic deflector 210 and an objective lens 212 are provided. A sample 213 is arranged on the downstream side of the objective lens 212. On the other hand, as the secondary optical system, an axially symmetric electrode 211, electromagnetic deflectors 209 and 214, an electrostatic lens 225, an electrostatic deflector 215, and a rotating lens 216 are arranged in order from the sample 213, and secondary electrons are arranged on the most downstream side. A line detector 218 is arranged.

[Electron gun]
The electron gun 201 is provided with a CeB6 single (cerium hexaboride) single crystal cathode, and its tip is polished into a sharp shape with a radius of 25 μm.

[Condenser lens]
Condenser lenses 202 and 203 are provided on the downstream side of the electron gun 201. The condenser lenses 202 and 203 are for adjusting a region having a uniform intensity of one primary electron beam emitted from the electron gun 201 to a size necessary and sufficient for the entire multi-aperture plate 204. It is. In this embodiment, two condenser lenses are arranged along the optical axis. The primary electron beam is emitted from the electron gun 201 at a predetermined emission angle, and the condenser lens 202 has a function of expanding the emission angle of the primary electron beam. On the other hand, the second-stage condenser lens 203 has a function of forming a crossover of the primary electron beam whose emission angle is enlarged at the predetermined point 205.

[Multi aperture plate]
A multi-aperture plate 204 is provided on the downstream side of the second-stage condenser lens 203. The multi-aperture plate 204 is for generating a plurality of primary electron beams from the primary electron beam that has passed through the condenser lens 203. For this reason, the multi-opening plate 204 has a large number of openings.

[Reduction lens]
The reduction lens 206 disposed on the downstream side of the multi-aperture plate 204 has a function of enlarging the crossover image of the primary electron beam in which the crossover is formed at the predetermined point 205 and forming an image near the main surface of the objective lens 212. Have.

[Electrostatic deflector]
A deflector 208 disposed on the downstream side of the reduction lens 206 is a general electrostatic deflector, and has a function of slightly deflecting the primary electron beam toward the sample 213 side.

[Beam separator]
The beam separator 209 includes an electromagnetic deflector, and has a function of deflecting the primary electron beam slightly deflected by the electrostatic deflector 208 so that the sample 213 is irradiated perpendicularly.

[Electrostatic deflector]
The electrostatic deflector 210 disposed on the downstream side of the beam separator 209 has a function of deflecting a plurality of primary electron beams and scanning the surface of the sample 213.

[Axisymmetric electrode]
The axially symmetric electrode 211 has a function of accelerating and focusing the secondary electron beam. That is, a positive high voltage is applied to the axisymmetric electrode 211, while a negative voltage is applied to the sample 213. For this reason, an acceleration electric field for secondary electrons is formed from the sample 213 to the axially symmetric electrode 211. This acceleration electric field accelerates and focuses the secondary electron beam.

[Beam separator]
As described in the primary optical system, the beam separator 209 is composed of an electromagnetic deflector and also functions as a secondary optical system element. That is, it has a function of deflecting the secondary electron beam emitted from the sample 213 side to the secondary optical system side (left side in FIG. 1). The beam separator 209 is a saddle type deflector having a lens inner cylinder of the objective lens 212 as a core. In the drawing, the beam separator 209 is described as being disposed outside the objective lens 212, but this is for convenience of explanation and illustration. Yes.

[Electromagnetic deflector]
The electromagnetic deflector 214 arranged on the downstream side of the beam separator 209 has a function of further deflecting the secondary electron beam and directing it to the next electromagnetic deflector 215.

[Electrostatic lens]
The electrostatic lens disposed on the downstream side of the electromagnetic deflector 214 is for eliminating the deflection chromatic aberration of the secondary electron beam generated by the electromagnetic deflectors 209, 214, and 215. Specifically, the secondary electron beam emitted from the sample 213 forms a secondary electron image in front of the electromagnetic deflector 209, and the image is further formed at the position of the point 217 by the electrostatic lens 225. At this time, the secondary electron image formed at the position of the point 217 by the electrostatic lens 225 is shifted to the left in FIG. 1 due to the deviation angle of the deflection direction due to the energy width of the secondary electrons generated in the electromagnetic deflector 209. Further, due to the deflection chromatic aberration generated in the electromagnetic deflector 214, the secondary electron image is shifted to the left in FIG. On the other hand, the secondary electron image at the position of the point 217 is shifted rightward in FIG. 1 due to the deflection chromatic aberration generated in the electromagnetic deflector 215. Here, the position of each deflector is set so that the deviation of the secondary electron image to the left in the figure caused by the electromagnetic deflectors 209 and 214 and the deviation to the right caused by the electromagnetic deflector 215 are offset. This makes it possible to correct the deflection chromatic aberration.

  Here, since the electrostatic lens 225 is used instead of the electromagnetic lens, the shift of the secondary electron image to the left at the point 217 generated by the electromagnetic deflectors 209 and 214 does not rotate, and a simple leftward movement is performed. Therefore, the electromagnetic deflector 215 can correct the deflection chromatic aberration. For this reason, the lens structure is such that the secondary electron image does not rotate. The magnification ratio of the secondary electron image by the electrostatic lens 225 is preferably about 1 to 3 times, and is about 2 times in this embodiment.

[Electromagnetic deflector]
The electromagnetic deflector 215 disposed on the downstream side of the electrostatic lens 225 has a function of deflecting the secondary electron beam toward the secondary electron beam detector 218 side. The two-stage deflectors 214 and 215 have the same structure as that shown in FIG.
[Rotating lens]
The rotating lens 216 disposed on the downstream side of the electromagnetic deflector 215 has a function of forming a sample image on the secondary electron beam detector 218. Specifically, the rotating lens 216 has two magnetic gaps and has a structure that generates magnetic fields in opposite directions. By adjusting the ratio of currents flowing through the two coils, the rotating lens 216 has two structures in the direction in which the detectors 218 are arranged. It has a function of arranging a secondary electron image. The lens magnification can also be adjusted by finely adjusting the position of the predetermined point 217 where the secondary electron image is formed back and forth so as to satisfy the focusing condition of the excitation of the rotating lens 216.

[Secondary electron beam detector]
A secondary electron beam detector 218 is provided on the most downstream side of the secondary optical system. The secondary electron beam detector 18 detects a secondary electron beam emitted from the sample for each beam and observes the state of the sample surface.

[Action]
Next, the operation of the electron beam apparatus EB3 will be described. First, the primary electron beam emitted from the electron gun 201 is emitted at a predetermined emission angle, and this emission angle is enlarged by the condenser lens 202. The primary electron beam whose emission angle is enlarged is focused by the second stage condenser lens 203 so that a crossover is formed at a predetermined point 205. At this time, the primary electron beam traveling while being focused is irradiated onto the multi-aperture plate 204 with a uniform irradiation intensity. The primary electron beam passes through a large number of openings of the multi-aperture plate 204, whereby a plurality of primary electron beams are generated.

  Here, when the crossover at the point 205 formed by the condenser lens 203 and the multi-aperture plate 204 is enlarged, it becomes as shown in FIG. That is, the primary electron beam that has passed through the aperture near the optical axis forms a crossover at a point 205-1 (sample 213 side) close to the reduction lens 206, while the primary electron beam that has passed through the aperture far from the optical axis is reduced. A crossover is formed at a point 205-3 (on the electron gun 201 side) far from the lens 206. These crossovers are magnified by the reduction lens 206 and imaged near the main surface of the objective lens 212. At this time, when the image of the point 205-1 is formed on the main surface of the objective lens 212, the image of the primary electron beam that has passed through the point 205-2 and the point 205-3 is naturally transferred to the electron gun 201 side by the objective lens 212. Slightly cross to form a crossover.

  In conventional multi-beam electron beam devices, the crossover from all apertures intersects the optical axis at approximately the same position, so in the crossover, all the beams are concentrated in a narrow area, and the interaction between the beams here A large space charge effect occurs.

  In the electron beam apparatus EB3 according to the present embodiment, except that the crossover is formed, the beams passing through the respective apertures are the same as the conventional apparatus in the situation where the beams are separated from each other, but at the position where the crossover is formed. Even so, since the primary electron beams are separated from each other as indicated by points 205-1, 205-2, and 205-3, the space charge effect can be kept small even at the position where the crossover is formed.

  Here, a method for shifting the crossovers along the optical axis will be described with reference to FIG. In order to shift the crossover, the spherical aberration of the condenser lens 203 is used. FIG. 2 is a conceptual diagram of each element of the condenser lens 203. The condenser lens 203 has a lens core 203-1. The bore diameter of the condenser lens 203 is D, and the distance between the openings of the multi-aperture plate 204 that is farthest from the optical axis is d. At this time, there are two measures for shifting the crossover of the primary electron beam by the spherical aberration of the condenser lens 203.

One is to bring the lens bore diameter D closer to the maximum distance d between the openings, and the other is to make the angle α at which the openings at both ends from the point 205 where the crossover is formed larger than a predetermined value. As an example, for the former
1 <D / d ≦ 3
It can be confirmed by simulation if it is good.

For the latter, α> 200 mrad is sufficient. This is because the spherical aberration increases in proportion to α ³ , and if the opening angle is set such that α is larger than a predetermined value, the required amount of crossover deviation can be obtained by the spherical aberration. Because.

  Also, at the point where a crossover near the objective lens 212 is formed, the distance between the primary electron beams is further enlarged by the reduction lens 206, so that the space charge effect can be reduced.

  A plurality of primary electron beams having a crossover formed at a predetermined position are reduced in two stages by the reduction lens 206 and the objective lens 212, and a reduced image 221 is formed on the surface of the sample 213. The surface of the sample 213 is scanned by deflecting the primary electron beam with the electrostatic deflector 210.

  However, as shown in FIG. 6, a new problem arises because the crossover does not form an image at one point. That is, when the primary electron beam that has passed through the aperture far from the optical axis forms a crossover at a position away from the main surface of the objective lens 212 as indicated by a point 205-3, the primary electron beam is converted into a lens by the objective lens 212. Under the action, the surface of the sample 213 is slightly bent so as to approach the optical axis direction. For this reason, if it is assumed that the arrangement of the openings formed in the multi-aperture plate 204 is a lattice at regular intervals, a tar-shaped distortion will occur. Here, the tall shape refers to a barrel-like shape in which a rectangular middle portion in the longitudinal direction is slightly thickened and curved.

  On the other hand, when the pattern evaluation of the surface of the sample 213 is performed, the pitch of the primary electron beams on the surface of the sample 213 is different in the X-axis direction and the Y-axis direction as shown in FIG. Conveniently, the primary electron beams are equally spaced. Therefore, if a plurality of openings are arranged at positions distorted in a pincushion shape as shown in FIG. 9 in advance, the tar-shaped distortion generated in the objective lens 212 is corrected, and primary electrons with equal intervals as shown in FIG. Lines can be obtained and the space charge effect can be kept low. Here, the bobbin type refers to a shape like a bobbin in which a rectangular middle portion in the longitudinal direction is slightly narrowed and curved. Further, when the objective lens is an electromagnetic lens, a rotation that slightly changes depending on the distance from the optical axis occurs, and therefore it is necessary to provide an opening at a position indicated by reference numeral 220 '.

  The secondary electron beam emitted from the scanning point of the sample 213 is accelerated by an accelerating electric field generated by the axially symmetric electrode 211 to which a positive high voltage is applied inside the objective lens 212 and the negative voltage applied to the sample 213. Focused. Then, a sample image is formed immediately after passing through the objective lens 212. The secondary electron beam diverging from the sample image is deflected in the direction of the optical axis by the electrostatic deflector 210 and further deflected by the beam separator 209 to the secondary optical system (left side in the figure). Thereafter, the beam is deflected in the vertical direction by the two-stage electromagnetic deflectors 214 and 215, and a second-stage sample image is formed at the position of the point 217. Further, a sample image is formed on the secondary electron beam detector 218 by the rotating lens 216, and secondary electron detection is performed for each electron beam. Here, the electrostatic lens 225 eliminates the deflection chromatic aberration of the secondary electron image generated by the three electromagnetic deflectors 209, 214, and 215.

[Fourth Embodiment]
[Overview]
FIG. 10 is a schematic view of an electron beam apparatus EB4 including an aberration correction lens mechanism according to the fourth embodiment of the present invention. This electron beam apparatus EB4 is a primary optical system, in order from the upstream side of the electron beam E, an electron gun 301, a condenser lens 325, a multi-aperture plate 302, reduction lenses 303 and 304, a first auxiliary lens 305, a two-stage electrostatic deflection. 306, 307, Wien filter 308, second auxiliary lens 311, electrostatic deflector 312, beam separator 313, electrostatic deflector 314, and objective lens 315. A sample 316 is disposed on the downstream side of the objective lens 315.

  On the other hand, as the secondary optical system, an objective lens 315, an electrostatic deflector 314, a beam separator 313, an electromagnetic deflector 317, and magnifying lenses 318 and 319 are arranged in order from the sample 316, and a secondary electron beam is disposed on the most downstream side. A detector 320 is arranged.

[Electron gun]
The electron gun 301 includes a CeB6 single (cerium hexaboride) single crystal cathode, and the tip thereof is polished to a sharp shape.

[Condenser lens]
A condenser lens 325 is provided on the downstream side of the electron gun 301. The condenser lens 325 is used to adjust a region where the intensity of the primary electron beam emitted from the electron gun 301 is uniform to a predetermined size at the position of the multi-aperture plate 302.

[Multi aperture plate]
A multi-aperture plate 302 is provided on the downstream side of the condenser lens 325. The multi-aperture plate 302 is for generating a plurality of primary electron beams from the primary electron beam that has passed through the condenser lens 325. For this reason, a large number of openings are formed in the multi-aperture plate 302.

[Reduction lens]
The reduction lenses 303 and 304 arranged on the downstream side of the multi-aperture plate 302 have a function of adjusting the reduction rate of the primary electron beam and forming a reduced image at a predetermined position.

[First auxiliary lens]
The first auxiliary lens 305 disposed on the downstream side of the reduction lens 304 is for forming a crossover image at a predetermined position of a Wien filter 308 described later. The first auxiliary lens 305 is disposed at the image point of the primary electron beam.

[Electrostatic deflector]
The electrostatic deflectors 306 and 307 arranged on the downstream side of the first auxiliary lens 305 are general electrostatic deflectors and have a function of deflecting a primary electron beam for axial alignment with the Wien filter 308. is doing.

[Vienna Filter]
The Wien filter 308 disposed on the downstream side of the electrostatic deflector 307 is a main part of the aberration correction lens mechanism. The object point 309 and the image point 326 of the Wien filter 308 are outside the Wien filter 308. Here, the non-dispersive Wien filter 308 has two imaging points 323 and 324 that are equidistant from the center point 310 in the optical axis direction. In other words, it has a lens action for forming an image of the primary electron beam emanating from the point 323 at the point 324. Accordingly, if the primary electron beam emitted from the point 325 by the auxiliary lens 305 is imaged at the point 323, the Wien filter 308 forms an image at the point 324. Therefore, the dotted trajectory 322 in FIG. 10 is a trajectory that is pointed with respect to the point 310 inside the Wien filter 308. In addition, when a point-symmetrical trajectory is used in this way, no new aberration is generated in the primary electron beam outside the optical axis, so that the aberration can be suppressed small.

[Second auxiliary lens]
The second auxiliary lens 311 disposed on the downstream side of the Wien filter 308 has a function of forming an image of the primary electron beam near the main surface of the objective lens 315. The second auxiliary lens 311 is disposed at the image point of the Wien filter 308.

[Electrostatic deflector]
The electrostatic deflector 312 disposed on the downstream side of the second auxiliary lens 311 has a function of slightly deflecting the primary electron beam toward the beam separator 313 described later.

[Beam separator]
The beam separator 313 includes an electromagnetic deflector, and has a function of deflecting the primary electron beam slightly deflected by the electrostatic deflector 312 so that the sample 316 is irradiated perpendicularly.

[Electrostatic deflector]
The electrostatic deflector 314 arranged on the downstream side of the beam separator 313 has a function of deflecting in order to scan the surface of the sample 316 with a primary electron beam.

[Objective lens]
The objective lens 315 has a function of reducing the primary electron beam that has passed through the electrostatic deflector 314 and focusing it on the surface of the sample 316.

[Secondary optical system]
[Objective lens]
The objective lens 315 also functions as a secondary optical system, and specifically accelerates and focuses the secondary electron beam emitted from the surface of the sample 316.

[Beam separator]
As described in the primary optical system, the beam separator 313 is composed of an electromagnetic deflector and also functions as a secondary optical system element. That is, it has a function of deflecting the secondary electron beam that has passed through the objective lens 315 to the secondary optical system side (to the right in FIG. 1).

[Electromagnetic deflector]
The electromagnetic deflector 317 disposed on the downstream side of the beam separator 313 has a function of further deflecting the secondary electron beam and directing it to the next secondary optical system element.

[Magnifying lens]
The magnifying lenses 318 and 319 arranged on the downstream side of the electromagnetic deflector 317 are for adjusting the magnification of the secondary electron beam and forming a magnified image with the secondary electron detector 320 described later.

[Secondary electron beam detector]
A secondary electron beam detector 320 is provided on the most downstream side of the secondary optical system. The secondary electron beam detector 320 detects the secondary electron beam emitted from the sample 316 for each beam and observes the state of the sample surface.

[Action]
Next, the operation of the electron beam apparatus EB4 including the aberration correction lens mechanism of the present embodiment will be described. First, the primary electron beam emitted from the electron gun 301 is focused by the condenser lens 325. The primary electron beam is irradiated to the multi-aperture plate 302 with uniform intensity while being focused. The primary electron beam that has passed through each opening of the multi-aperture plate 302 forms a crossover at a point 326.

  The primary electron beam that has passed through the aperture of the multi-aperture plate 302 and formed into a plurality of beams has a reduction ratio adjusted by the two-stage reduction lenses 303 and 304, and forms a reduced image at a point 309. This reduced image forms an image having negative axial chromatic aberration at a point 326 by a non-dispersive Wien filter 308. When a plurality of primary electron beams are used, it is necessary to narrow down the primary electron beam at a location away from the optical axis. Therefore, the first auxiliary lens 305 is provided at the point 309 and the crossover image is formed inside the Wien filter 308. The image is formed at the position indicated by the point 323. Since the first auxiliary lens 305 is disposed at the image points of a plurality of primary electron beams, it does not affect the image formation of each primary electron beam, and the crossover image formation diagram is indicated by a dotted line 322. It can be controlled to be in orbit.

  Here, since the object point 309 and the image point 326 of the Wien filter 308 are outside the Wien filter 308 when viewed in the optical axis direction, the alignment deflectors 306 and 307 to the Wien filter 308 are connected to the Wien filter 308. It can be placed in front of the filter 308. Further, since the trajectory indicated by the dotted line 322 is point-symmetrical above and below the intermediate point 310 of the Wien filter 308, coma aberration and chromatic aberration due to magnification and rotation do not occur in the Wien filter 308.

  Further, the second auxiliary lens 311 is also provided at the image point 326 of the Wien filter 308, and the crossover image formed by the point 324 is formed in the vicinity of the main surface of the objective lens 315. Therefore, coma aberration generated by the objective lens 315 is generated. And magnification / rotational chromatic aberration can be reduced. The multi-beam image having negative axial chromatic aberration is further reduced by the objective lens 315, and at this time, it is canceled by the positive axial chromatic aberration generated by the objective lens and focused on the sample 316.

  In order to correct the deflection chromatic aberration generated in the beam separator 313, the plurality of primary electron beams are deflected by the electrostatic deflector 312 at an angle equal to the deflection amount in the beam separator 313. The primary electron beam emitted vertically from the laser beam can enter the sample 316 perpendicularly. Scanning on the surface of the sample 316 is performed by two-stage deflection by the electrostatic deflectors 312 and 314, and is deflected at a deflection fulcrum that minimizes coma and chromatic aberration due to deflection.

  The secondary electron beam emitted from the scanning point on the sample 316 is accelerated and focused by the objective lens 315, deflected in the optical axis direction by the electrostatic deflector 314, and separated from the primary electron beam by the beam separator 313. . The separated secondary electron beam is deflected by a deflector 317 by a necessary angle and enters the secondary optical system. In the secondary optical system, the magnification ratio is adjusted by the two-stage magnification lenses 318 and 319, and an enlarged image is formed on the secondary electron detector 320 to detect the secondary electron beam.

By the way, in order to confirm how far the point 323 or 324 where the crossover image is formed is formed from the center point 310 of the Wien filter 308, the Wien filter 308 is approximated by two thin lenses. This is convenient. That is, assuming that two thin lenses are assumed as shown in FIG. 10B and each focal length is f, the following formula is obtained according to the thin lens formula. As a specific example, assuming that the focal length of one thin lens is 30 and the distance from the middle point of each thin lens is 5, the focal length f as follows is 4.3.

  Accordingly, the distance from the center point 310 of the Wien filter 308 to the point 323 or 324 is 5 + 4.3 = 9.3 (arbitrary unit).

[Fifth Embodiment]
FIG. 11 shows an electron beam apparatus EB5 including an aberration correction lens mechanism according to the fifth embodiment of the present invention. The electron gun 331 is a CeB6 single crystal cathode, and a cathode 332 whose tip is polished to a curvature radius of 200 μm to 1 mm can be used to emit a primary electron beam with low luminance and high emittance. The primary electron beam emitted from the electron gun 331 is focused by the condenser lens 333, and the shaping aperture 334 is irradiated with a uniform irradiation intensity. The magnification of the primary electron beam formed into a square or rectangle by the forming aperture 334 is adjusted by the two-stage reduction lenses 335 and 336, and a square or rectangular primary electron beam image is formed on the surface of the sample 339 by the objective lens 338. Let In the electromagnetic deflector 337, the primary electron beam is deflected toward the sample 339. If there is no problem even if the incident angle of the primary electron beam to the surface of the sample 339 is about 5 to 10 degrees, the secondary electron beam can be guided to the secondary optical system without being deflected by a beam separator or the like.

  The secondary electron beam emitted from the sample 339 forms an image close to the magnification factor 1 at the position of the point 353 by the tablet lenses 338 and 340. At this time, the NA aperture plate 352 is provided at a position that minimizes coma and lateral chromatic aberration. The image of the secondary electron beam formed at the point 353 forms images at the points 346 and 347 by the two-stage Wien filters 342 and 343, but the quadrupole electric field and the quadrupole magnetic field of the two-stage Wien filters 342 and 343 are formed. By optimizing the excitation conditions, an image of negative axial chromatic aberration having the same absolute value as the axial chromatic aberration generated by the objective lens systems 338 and 340 can be formed at the point 347. The optimum excitation condition here refers to a condition in which the primary electron beam on the optical axis goes straight, the non-dispersive Wien condition is satisfied, and negative axial chromatic aberration occurs. Accordingly, the axial chromatic aberration is almost zero at the position of the point 347, and the necessary resolution can be obtained even if the NA aperture plate 352 is enlarged. An image of the secondary electron beam formed at the point 347 is enlarged to a necessary magnification by the magnifying lenses 348 and 349 and formed on the secondary electron beam detector 350 formed of an MCP (microchannel plate).

  Of the secondary electron beam images generated on the sample 339, high resolution is required even at an image at a position away from the optical axis. In order to achieve this, a principal ray emitted from a position away from the optical axis is required. As long as it is symmetrical about the middle point 346. Therefore, an auxiliary lens 341 for controlling the NA aperture image is provided at the position of the point 353 where the secondary electron beam image is formed, and the image of the aperture of the NA aperture plate 352 is connected to the point 355 near the end face of the Wien filter 342. You can image it. As a result, the trajectory of the principal ray from a position away from the optical axis is symmetric in the vertical direction as shown by the dotted line 345, and coma aberration and chromatic aberration of magnification can be reduced. Further, by providing auxiliary lenses 351 and 354 for NA aperture image control in front of the magnifying lenses 348 and 349, respectively, and by forming an image of the aperture of the NA aperture plate 352 on the main surface of the magnifying lens, distortion aberration can be reduced. Can do. The auxiliary lens 351 has a variable magnification function.

The position of the point 355 can be obtained by approximating that there is a thin lens at the center of the Wien filters 342 and 343 as in FIG. Here, assuming that the distance from the intermediate point 346 of each Wien filter 342, 343 to the respective Wien filter 342, 343 is 35 and the distance from each Wien filter 342, 343 to the point 347, 353 is 35, it is shown by a solid line. From the image formation relationship

  That is, the point 355 is located at 17.5 from the center of the Wien filter.

  In order to form an image of the aperture of the NA aperture plate 352 at the position of the point 355, in other words, to control the principal ray of the secondary electron beam outside the optical axis to take the trajectory indicated by the dotted line 345, the NA aperture image is used. An auxiliary lens 341 for control may be used.

[Sixth Embodiment]
[Overview]
FIG. 12 is a schematic view showing an electron beam apparatus EB6 according to the sixth embodiment of the present invention. This electron beam apparatus EB6 is used as a primary optical system in order from the upstream side of the electron beam E, an electron gun 401, condenser lenses 402 and 403, a multi-aperture plate 404, a rotating lens 405, an axial chromatic aberration correction lens 406, an electrostatic deflector. 409, a beam separator 410, a scanning electrostatic deflector 433, and an objective lens 411. A sample 412 is disposed on the downstream side of the objective lens 411. On the other hand, as the secondary optical system, an objective lens 411, a beam separator 410, an electromagnetic deflector 413, an electrostatic lens 414, an electromagnetic deflector 415, an aberration correction lens 417, and a magnifying lens 419 are arranged in order from the sample 412. A secondary electron beam detector 420 is disposed on the downstream side.

[Electron gun]
The electron gun 401 includes a CeB6 single crystal cathode, and the tip thereof is polished into a sharp shape.

[Condenser lens]
Condenser lenses 402 and 403 are disposed on the downstream side of the electron gun 401, and the condenser lenses 402 and 403 adjust the emission angle of the primary electron beam emitted from the electron gun 401.

[Multi aperture plate]
A multi-aperture plate 404 is provided on the downstream side of the condenser lens 403. The multi-aperture plate 404 is for generating a plurality of primary electron beams from the primary electron beams emitted from the electron gun 401. For this reason, a large number of openings are formed in the multi-opening plate 404.

[Rotating lens]
A rotating lens 405 disposed on the downstream side of the multi-aperture plate 404 adjusts the rotation of a plurality of primary electron beams that have passed through the multi-aperture plate 404.

[Axial chromatic aberration correction lens]
The axial chromatic aberration correction lens 406 is for generating negative chromatic aberration with respect to the primary electron beam, and comprises a Wien filter. The axial chromatic aberration correction lens 406 is provided with a plurality of sets of generally sector-shaped electromagnetic poles as shown in FIG. 12B, and these are combined to constitute the axial chromatic aberration correction lens 406. In the axial chromatic aberration correction lens 406 of the present embodiment, 12 electromagnetic poles are provided.

  Next, the specific structure of the electromagnetic pole will be described in more detail with reference to FIG. The electromagnetic pole includes a first electromagnetic pole portion 422a, a second electromagnetic pole portion 422b, and a third electromagnetic pole portion 422c. The first electromagnetic pole portion 422a is a portion closest to the optical axis, and has a cross-sectional shape extending in a fan shape from the optical axis. The second electromagnetic pole portion 422b has a substantially constant cross-sectional thickness and a parallel shape. Further, the third electromagnetic pole portion 422c has an arcuate cross-sectional shape extending in the circumferential direction so that a sufficient screw spacing in the circumferential direction can be obtained when the outer cylinder 432 is joined by the screw 426. The first electromagnetic pole portion 422a and the second electromagnetic pole portion 422b are connected, and further, the second electromagnetic pole portion 422b and the third electromagnetic pole portion 422c are connected. An exciting coil 423 is wound around the second electromagnetic pole portion 422b. The magnetic flux generated by the exciting coil 423 is effectively formed near the optical axis. Further, an insulating spacer 427 is disposed on the third electromagnetic pole portion 422c side, and is fixed to the outer cylinder 432 via the insulating spacer 427. A normal fixing screw 426 is used for fixing to the outer cylinder 432. Then, after all the electromagnetic poles are fixed to the outer cylinder 432, only the bore portion and the first electromagnetic pole portion 422a near the optical axis are finally processed.

[Electrostatic deflector]
A deflector 409 disposed on the downstream side of the axial chromatic aberration correction lens 406 is a general electrostatic deflector and deflects a primary electron beam. The electrostatic deflector 409 corrects a deflection chromatic aberration of a beam separator 410 described later, and also functions as a deflector for scanning the sample 412.

[Beam separator]
The beam separator 410 deflects the primary electron beam to the sample 412 side so that the sample 412 is irradiated with the primary electron beam perpendicularly. The beam separator 410 includes a general electromagnetic deflector.

[Electrostatic deflector]
The electrostatic deflector 433 disposed on the downstream side of the beam separator 410 is a scanning deflector and has a function of scanning the surface of the sample 412 by deflecting the primary electron beam together with the electrostatic deflector 409.

[Objective lens]
The objective lens 411 has a function of reducing the primary electron beam and focusing on the surface of the sample 412.

[Beam separator]
The beam separator 410 is for slightly deflecting the secondary electron beam emitted from the sample 412 toward the secondary optical system and separating it from the primary electron beam.

[Electromagnetic deflector]
The electromagnetic deflector 413 is for further deflecting the secondary electron beam slightly deflected by the beam separator 410 and guiding it to the secondary electron optical system.

[Electrostatic lens]
The electrostatic lens 414 arranged on the downstream side of the electromagnetic deflector 413 is for enlarging the secondary electron beam without rotating the deflection direction.

[Electromagnetic deflector]
The electromagnetic deflector 415 provided on the downstream side of the electrostatic lens 414 is for correcting the deflection chromatic aberration caused by the beam separator 410 and the electromagnetic deflector 413 while making the optical axis of the secondary electron beam vertical. It is.

[Aberration correction lens]
The aberration correction lens 417 provided on the downstream side of the electromagnetic deflector 415 is for correcting axial chromatic aberration and spherical aberration of the secondary electron beam. The aberration correction lens 417 is composed of a Wien filter having the same structure as the above-described axial chromatic aberration correction lens 406.

[Magnifying lens]
A magnifying lens 419 is provided on the downstream side of the aberration correction lens 417, and the magnifying lens 419 forms a magnified image on the secondary electron beam detector.

[Secondary electron beam detector]
A secondary electron beam detector 420 is provided on the downstream side of the magnifying lens 419. The secondary electron beam detector 420 is for detecting the secondary electron beam emitted from the sample 412 and observing the state of the sample surface.

[Action]
Next, the operation of the electron beam apparatus EB6 according to this embodiment will be described. First, the emission angle of the primary electron beam emitted from the electron gun 401 is adjusted by the two condenser lenses 402 and 403, and the multi-aperture plate 404 is irradiated with uniform intensity. The primary electron beam that has passed through each opening of the multi-aperture plate 404 is rotationally adjusted by the rotating lens 405, and at the same time, a reduced image is formed at a point 407. Here, the rotation adjustment refers to rotation of a plurality of primary electron beams so that the intervals between adjacent scanning lines are equal when a sample is simultaneously scanned with a plurality of primary electron beams. The reduced image formed at the point 407 forms an image having negative chromatic aberration at the point 408 by the longitudinal chromatic aberration correction lens 406.

  By the way, the axial chromatic aberration correction lens 406 is caused by fluctuations in the voltage applied to each electromagnetic pole, drift in the current supplied to the excitation coil, and low manufacturing accuracy of the axial chromatic aberration correction lens 406. The aberration correction lens itself also generates a parasitic aberration of about 100 nm at the point 408.

  However, the parasitic aberration of about 100 nm is also reduced by the objective lens 411 having a reduction effect of 1/20, and is reduced to about 1/20 on the surface of the sample 412. Become. That is, the amount of aberration generated due to power supply instability or the like is predicted by simulation or the like, and the reduction ratio from the axial chromatic aberration correction lens image point 408 to the sample may be determined so that the aberration becomes sufficiently small on the sample surface.

  The image at the point 408 is deflected twice with the deflection chromatic aberration corrected by the electrostatic deflector 409 and the beam separator 410 of the electromagnetic deflector, and enters the objective lens 411 perpendicularly.

  The secondary electron beam emitted from the sample 412 is accelerated and converged by the objective lens 411, and forms an enlarged image that is slightly more than 1 times the image of the sample surface immediately above the objective lens 411. The secondary electron edge from this magnified image is deflected by about 11 ° to the secondary optical system side (right in the figure) by the beam separator 410, and further deflected by about 34 ° to the right by the electromagnetic deflector 413. Turn right with a total angle of 45 ° to the line. The electrostatic lens 414 forms an enlarged image about twice as large as the image of the sample surface at the point 416 without rotating the polarization direction of the secondary electron beam.

  An electromagnetic deflector 415 is provided at a position a predetermined distance from a point 416 where a double magnified image is formed, and the optical axis of the secondary electron beam is made vertical, and at the same time, the beam separator 410 and the electromagnetic deflector The deflection chromatic aberration generated at 413 is corrected. A secondary electron beam emitted from the point 416 on which the magnified image is formed forms an equal-magnification image of the sample surface image at the point 418 by the aberration correction lens 417 that corrects axial chromatic aberration and spherical aberration, and further magnifies. An enlarged image is formed on the secondary electron beam detector 420 by the lens 417.

  The aberration correction lens 417 uses a power supply with low assembly accuracy and relatively low stability so that it can be manufactured at low cost. For example, the aberration generated at the point 418 is about 5 times the aberration generated at the point 408. In other words, the assembly accuracy and the power supply accuracy are adopted so that the parasitic aberration is about 500 nm. This parasitic aberration is converted to a value on the surface of the sample 412 in consideration of the magnification, and the magnification of the image from the sample 412 to the point 416 is doubled. Therefore, when calculated backward, the value is 500/2 = 250 nm. Become. Therefore, if the arrangement of the primary electron beams on the sample 412 is set at 400 nm intervals, this 250 nm parasitic aberration does not cause any problem. This is because the size of the secondary electron beam detector 420 can be set to 400 nm in terms of the sample surface, and even if the secondary electron beam is about 250 nm in terms of the sample surface, it is sufficiently incident on the detector. Not.

  If it is attempted to detect all secondary electron beams emitted from within ± 90 degrees with respect to the normal line of the sample 412 and having an initial energy of 0.5 to 5 eV, the beam diameter at the point 416 is 2 mm due to spherical aberration and axial chromatic aberration. It will spread to the extent. This can be calculated by commercially available simulation software. For this reason, if the aberration correction lens 417 is not provided, a part of the secondary electron beam is detached from the detector, and as a result, the detection efficiency is lowered. However, if the longitudinal chromatic aberration and the spherical aberration are corrected by the aberration correction lens 417, the aberration becomes only the above-mentioned parasitic aberration of about 250 nm, so that detection efficiency close to 100% can be obtained.

  Each of the axial chromatic aberration correction lens 406 and the aberration correction lens 417 is a Wien filter in which 12 electromagnetic poles having a structure as shown in FIG. This Wien filter satisfies the non-dispersion condition by forming an intermediate image at the intermediate point 428 or 430. That is, the trajectories indicating the imaging conditions are solid lines 429 and 431.

  In FIG. 12B, reference numeral 421 denotes an optical axis, and reference numeral 422 denotes a permalloy that is an electrode and magnetic pole. The final machining is performed by electric discharge machining, and the dimensions, shapes, and angular intervals are machined with high accuracy. Reference numeral 423 denotes an exciting coil, reference numeral 424 denotes a metal cover for preventing an insulator for covering the coil from being seen from the optical axis direction, and reference numeral 425 denotes a screw for fastening the metal cover. Reference numeral 426 denotes a screw for fixing the electrode / magnetic pole to the outer cylinder 432, and reference numeral 427 denotes an insulating spacer. The Wien filter is easy to manufacture by making the length in the optical axis direction (that is, the thickness) shorter than the distance between the object point and the image point of this lens system. The value of spherical aberration is increased by 4 to 9 times. That is, by making the actual dimension of the Wien filter in the optical axis direction equal to or less than ½ of the distance between the object point and the image point, the absolute value of the axial chromatic aberration coefficient can be increased to four times or more. It is possible to avoid the problem that the axial chromatic aberration coefficient is increased on the object plane of the axisymmetric lens caused by reducing the reduction ratio of the system.

  For the primary optical system, a reduction ratio that is equal to or less than the ratio between the aberration generated by the axial chromatic aberration correction lens 406 and the necessary resolution on the surface of the sample 412 may be selected, whereas in the secondary optical system, aberration correction is performed. It can be said that the minimum interval between the primary electron beams may be made larger than the value on the sample surface of the parasitic aberration obtained by dividing the aberration generated by the lens 417 by the magnification of the surface of the sample 412 and the magnified image thereof.

[Seventh Embodiment]
[Overview]
FIG. 13 is a schematic view EB7 showing an electron beam apparatus according to the seventh embodiment of the present invention. The electron beam device EB7 is a primary optical system in order from the upstream side of the electron beam E, an electron gun 501, condenser lenses 502 and 503, a multi-aperture plate 504, a rotating lens 505, an NA aperture plate 521, a reduction lens 506, an electrostatic lens. A deflector 507, a beam separator 508 including an electromagnetic deflector, an objective lens 509, and an axially symmetric electrode 510 are provided. A sample 511 is arranged on the downstream side of the objective lens 509. On the other hand, as a secondary optical system, an objective lens 509, a beam separator 508, an electromagnetic deflector 512, an electrostatic lens 513, an electromagnetic deflector 515, a rotatable lens 516, and a secondary electron beam on the most downstream side in order from the sample 511. A detector 518 is arranged.

[Electron gun]
The electron gun 501 is provided with a CeB6 single crystal cathode, the tip of which is polished into a partial spherical shape having a radius of curvature of 25 μm, and can emit a primary electron beam with high brightness and high emittance. However, if it is desired to emit a high-luminance primary electron beam, the radius of curvature at the tip should be set to about 10 μm. On the other hand, when it is desired to emit a high emittance primary electron beam, the radius of curvature of the tip should be set to about 30 μm. Therefore, it is generally desirable to have a radius of curvature of about 10 μm to 30 μm.

[Condenser lens]
Condenser lenses 502 and 503 are disposed on the downstream side of the electron gun 501, and the condenser lenses 502 and 503 adjust the emission angle of the primary electron beam emitted from the electron gun 501.

[Multi aperture plate]
A multi-aperture plate 504 is provided on the downstream side of the condenser lens 503. The multi-aperture plate 504 is for generating a plurality of primary electron beams from the primary electron beams emitted from the electron gun 501. For this reason, the multi-opening plate 504 has a large number of openings.

[Rotating lens]
A rotating lens 505 disposed on the downstream side of the multi-aperture plate 504 rotates and adjusts a plurality of primary electron beams that have passed through the multi-aperture plate 504.

[NA aperture plate]
The NA aperture plate 521 disposed on the downstream side of the rotating lens 505 is for shaping a primary electron beam, and has an aperture with a predetermined shape at a position corresponding to the optical axis.

[Reduction lens]
The reduction lens 506 disposed on the downstream side of the NA aperture plate 521 reduces the primary electron beam that has passed through the multi aperture plate 504 and also converts the primary electron beam that has passed through the aperture of the NA aperture plate 521 into the main surface of the objective lens 509. This is for imaging in the vicinity.

[Electrostatic deflector]
An electrostatic deflector 507 disposed on the downstream side of the reduction lens 506 is a general electrostatic deflector, and deflects the primary electron beam. The electrostatic deflector 507 also functions as a deflector for scanning the sample 511.

[Beam separator]
The beam separator 508 deflects the primary electron beam toward the sample 511 so that the sample 511 is irradiated with the primary electron beam perpendicularly. The beam separator 508 is a general electromagnetic deflector.

[Objective lens]
The objective lens 509 has a function of reducing the primary electron beam and focusing it on the surface of the sample 511.

[Axisymmetric electrode]
The axially symmetric electrode 510 disposed on the downstream side of the objective lens 509 is for applying a high voltage to form an electric field having a predetermined intensity with the surface of the sample 511. In the present embodiment, a voltage of 1 kV / mm to 4 kV / mm is applied to the axisymmetric electrode 510.

[Beam separator]
The beam separator 508 is for slightly deflecting the secondary electron beam emitted from the sample 511 toward the secondary optical system and separating it from the primary electron beam.

[Electromagnetic deflector]
The electromagnetic deflector 512 is for further deflecting the secondary electron beam slightly deflected by the beam separator 508 and guiding it to the secondary electron optical system.

[Electrostatic lens]
The electrostatic lens 513 disposed on the downstream side of the electromagnetic deflector 512 is for enlarging the secondary electron beam without rotating the deflection direction.

[Electromagnetic deflector]
The electromagnetic deflector 515 provided on the downstream side of the electrostatic lens 513 is for making the optical axis of the secondary electron beam vertical.

[Rotating lens]
The rotating lens 516 disposed on the downstream side of the electromagnetic deflector 515 is for enlarging the secondary electron beam and forming a secondary electron image on the secondary electron beam detector 518.

[Secondary electron beam detector]
A secondary electron beam detector 518 is provided on the downstream side of the rotating lens 516. The secondary electron beam detector 518 is for detecting the secondary electron beam emitted from the sample 511 and observing the state of the sample surface.

[Action]
Next, the operation of the electron beam apparatus EB7 according to this embodiment will be described. First, the primary electron beam emitted from the electron gun 501 is focused by the condenser lens 502 having a short focal length, the region having a uniform intensity distribution is enlarged, and further focused by the condenser lens 503 and before the rotating lens 505. A crossover image is formed. A multi-aperture plate 504 having an opening of 3 rows and 9 columns is provided immediately downstream of the condenser lens 503, and an image of the primary electron beam that has passed through the aperture of the multi-aperture plate 504 includes a rotation lens 505 and a reduction lens 506. Reduced by Here, the rotating lens 505 is composed of two substantially upper and lower lenses along the optical axis, and has a structure in which the central magnetic pole is shared, and the directions of the currents flowing in the coils are adjusted, and the directions are opposite to each other. The on-axis magnetic field is also controlled to be generated. The reduced primary electron beam is further reduced by the objective lens 509 so as to form an image on the sample 511.

  An NA aperture plate 521 is provided immediately upstream of the reduction lens 506. The aperture of the NA aperture plate 521 is the principal ray that has passed through the aperture farthest from the optical axis among the apertures of the multi aperture plate 504. It is provided at a position where it intersects. The NA aperture is designed to have a sufficiently large hole diameter so that no electron beam other than the principal ray is blocked by the NA aperture. In such a configuration, the primary electron beam from the opening near the optical axis of the multi-aperture plate 504 forms a crossover image on the downstream side of the opening of the NA aperture plate 521. As a result, the beam current of the primary electron beam is reduced.

  The reduction lens 506 reduces the image of the aperture of the multi-aperture plate 504 and simultaneously forms an image formed by the NA aperture plate 521 at a position near the main surface of the objective lens 509. At this time, the image formation position is a position where the aberration is minimized by simulation. The electrostatic deflector 507 deflects the primary electron beam by about 10 °, and the electromagnetic deflector 508 deflects it by the same angle in the opposite direction. The primary electron beam is applied to the objective lens 509 so as to be perpendicular to the surface of the sample 511. Make it incident.

  A positive voltage is applied to the axially symmetric electrode 510, whereby the electric field strength on the surface of the sample 511 can be set in a range of 4 kV / mm to 10 kV / mm. For example, if the sample is easily discharged due to circumstances such as vias, it is set to about 4 kV / mm, and if the sample is a flat surface, it is set to about 10 kV / mm. In the sample, the electric field strength is set between these values. The secondary electron beam emitted from the surface of the sample 511 passes through the objective lens 509, and an enlarged image is formed at the position of the point 519. The secondary electron beam is deflected to the secondary optical system side (right side in the figure) by the beam separator 508, further largely deflected by the electromagnetic deflector 512, and incident on the electrostatic lens 513. The secondary electron beam that has passed through the electrostatic lens 513 is returned vertically by the electromagnetic deflector 515.

  A rotatable lens 516 is disposed immediately downstream of the point 517 where the image of the secondary electron beam is formed by the electrostatic lens 513, and the image is magnified by the rotatable lens 516 and is detected on the detection surface 519 of the detector 518. A secondary electron beam image is formed. The detection surface 519 has a sufficiently larger area than the secondary electron beam detector 518, and a high voltage is applied to the surface (see FIG. 15). By applying a high voltage in this way, the secondary electron beam is accelerated until it reaches an energy state in which the light emission efficiency of the scintillator is increased, and then the secondary electron beam is incident on the scintillator.

  For the primary electron beam, the deflection chromatic aberration generated by the deflection of the beam separator 508 is the distance between the point 523 where the reduced image is formed and the electrostatic deflector 507, and between the point 523 and the electromagnetic deflector 508. It can be set to 0 by making it half the distance. This is due to the following reason. That is, the deflection chromatic aberration by the electrostatic deflector 507 converted at the position of the point 523 is obtained by the following equation.

(Distance between point 523 and point 507) × (deflection chromatic aberration angle at point 507)
Further, the deflection chromatic aberration by the beam separator 508 converted at the position of the point 523 is obtained by the following equation.

(Distance between point 523 and point 508) × (deflection chromatic aberration angle at point 508)
This value can be transformed into the following formula:

2 · (Distance between point 523 and point 507) × 1/2 · (Deflection chromatic aberration angle at point 507)
This equation is the same as the equation for calculating the deflection chromatic aberration by the electrostatic deflector 507 converted at the position of the point 523. For this reason, it is possible to cancel the deflection chromatic aberration.

  As for the deflection chromatic aberration of the secondary electron beam, the magnification of the secondary electron beam by the electrostatic lens 513 is assumed to be M, and the image position 519 by the objective lens 509 of the secondary electron beam image is between the electromagnetic deflector 508. If the distance is L1, the distance between the point 519 and the second stage electromagnetic deflector 512 is L2, and the distance between the second stage electromagnetic deflector 515 and the secondary electron beam image position 517 by the electrostatic lens 513 is L3, The deflection chromatic aberration is canceled when the following relationship holds.

M (L1α1 + L2α2) = (α1 + α2) L3
Here, “M” is a constant for converting the deflection chromatic aberration at the point 519 into the deflection chromatic aberration at the point 517. L1α1 is a deflection chromatic aberration generated at the point 519 by the beam separator 508. L2α2 is a deflection chromatic aberration generated at the point 519 by the electromagnetic deflector 512. (Α1 + α2) L3 is a deflection chromatic aberration generated at the point 517 by the electromagnetic deflector 515. Since the left side and the right side of the above formula have opposite directions of aberration, the deflection chromatic aberration is canceled out.

  FIG. 14 is a diagram showing an arrangement when a plurality of primary electron beams formed by the multi-aperture plate 504 are irradiated on the surface of the sample 511. The sample 511 is evaluated while continuously moving a sample table (not shown) in the Y-axis direction. Therefore, the primary electron beam is scanned in the X-axis direction. When the primary electron beam is scanned in the X-axis direction, the secondary electron beam image emitted from the scanning point may be different from the beam shape of the original primary electron beam and may be expanded. This is due to the aberration of the optical system. As a result of simulating this spread, the spread of the secondary electron beam image in the X-axis direction is about three times the spread of the secondary electron beam image in the Y-axis direction, and as an example, the circular beam shape may be elliptical. It was revealed. In consideration of this, the arrangement of the plurality of primary electron beams is tilted by θ in the arrangement direction in the X direction as shown in FIG. 14, and the arrangement direction of the beams in the Y axis direction is parallel to the Y axis direction. This is because each electron beam can be prevented from interfering by making the distance between the scanning lines of each primary electron beam wider than the dimension when each primary electron beam is blurred and expanded. As a result, the arrangement of the outer edges of the multiple primary electron beams is not a rectangle but a slightly crooked rectangle, that is, a parallelogram, so the maximum interval between the primary electron beams is the upper left primary electron beam and the lower right primary electron in the figure. The distance 529 between the lines. If the primary electron beam of 521 is eliminated (no opening is formed at the corresponding position of the multi-aperture plate), the maximum inter-beam distance is 530. Similarly, if the primary electron beam of 528 is eliminated, 531 is the maximum beam interval. It becomes. Here, a point 525 is a point obtained by extending the beam positions 521, 522, 523, and 524 by these intervals, and a point 526 is a point 521 in a direction perpendicular to the line connecting the beam positions 521. And a position extended by 1/3 of the interval of 522. The X axis is parallel to the line connecting these two virtual two points 525, 526, and the Y axis is perpendicular to it. The X axis and Y axis here correspond to the moving direction of the sample stage and the scanning direction of the primary electron beam, respectively. In the design example, the X-axis direction interval was 1.2 μm, and the Y-axis direction interval was 0.4 μm.

  FIG. 15 and FIG. 16 show the structure of the detector when the multi-beam arrangement is as shown in FIG. Here, the magnification of the secondary optical system, that is, the magnification from the sample 511 to the detector 518 is set to 100 times. Since the interval in the Y-axis direction of the primary electron beam on the sample surface is 0.4 μm as described above, the Y-axis direction dimension of each detection surface shown in FIG. 16 is 0.4 × 100 = 40 μm, and the central portion in the X-axis direction is The width of the detection surface 546 was 1.2 μm × 100 = 120 μm, and the width of the detection surfaces 47 at both ends was 150 μm.

In the manufacturing method, one end of an optical fiber having a diameter of 200 μm was tapered by grinding it over a length of 542 (about 1 mm) as shown in FIG. At this time, the width of the detection surface 546 in the central region in FIG. 16 is narrower than the width of the detection surfaces 547 at both ends. Even with this deletion, the taper angle was set to ψ = Tan ⁻¹ 0.08.

  Aluminum as a reflective material is vapor-deposited on the polished surface (tip) of the optical fiber thus polished, and bonded and bonded as shown in FIG. 16, and bonded to a hole provided in the vacuum window. At the same time, the surface was polished to deposit tin oxide, a scintillator was applied, an aluminum film was thinly deposited on the surface, and a positive high voltage of 8 kv could be applied to this film.

  In the detector of the present invention, since the light receiving surface of each pixel is rectangular, the area ratio capable of receiving light can be made larger than the light receiving surface in which a large number of circular fibers are bundled. The area ratio referred to here is the ratio of the area of the actual light receiving surface to the area of the entire detection surface, and in this embodiment, there is no gap that occurs when bundling circular sections, and the entire surface is the detection surface. Become. Since a positive high voltage is applied to the detection surface, the light emission efficiency is high.

  Further, most of the secondary optical system can be vertical, so that it is structurally strong, and the deflection chromatic aberration can be corrected by the combination with the primary optical system configured vertically.

[Eighth Embodiment]
[Overview]
FIG. 17 is a schematic view showing an electron beam apparatus EB8 according to the eighth embodiment of the present invention. This electron beam apparatus EB8 is used as a primary optical system in order from the upstream side of the electron beam E, an electron gun 601, a condenser lens 602, a molded aperture plate 603, molded lenses 604 and 605, deflectors 606 and 607, a metal cylinder 633, a beam. The objective lens which consists of separator 608,611 and each electrode 612,613,614 is provided. A sample 615 is disposed on the downstream side of the objective lens. On the other hand, as the secondary optical system, the objective lens, beam separators 608 and 611, NA aperture 616, deflectors 617 and 618, electrostatic lens 619, cylinder 638 with a tapered hole, deflectors 620 and 621, in order from the sample 615. Axial chromatic aberration correction lens 622, axial alignment deflectors 623 and 624 for lenses 625 and 626 described later, auxiliary lens 626, magnifying lens 625, axial alignment deflectors 627 and 628 for auxiliary lenses 629 and 630, auxiliary lens 630, deflection A secondary electron beam detector 632 made of MCP (multichannel plate) is disposed on the most downstream side.

[Electron gun]
The electron gun 601 includes a CeB6 (cerium hexaboride) single crystal cathode, and the tip thereof is polished into a partial sphere having a radius of curvature of 800 μm. This electron gun 601 is used in a state where shot noise is reduced by operating in the space charge limited region.

[Condenser lens]
A condenser lens 602 is disposed on the downstream side of the electron gun 601. The condenser lens 602 focuses the primary electron beam emitted from the electron gun 601, and has a uniform intensity on the downstream shaped aperture plate 603. It is for irradiating with.

[Molded aperture plate]
A molded aperture plate 603 is provided on the downstream side of the condenser lens 602. The shaping aperture plate 603 is for shaping the primary electron beam emitted from the electron gun 601 into a predetermined shape. Therefore, an opening having a predetermined shape is formed in the molded opening plate 603.

[Molded lens]
Molded lenses 604 and 605 arranged on the downstream side of the molded aperture plate 603 are for adjusting the reduction rate of the primary electron beam that has passed through the molded aperture of the molded aperture plate 603. In the primary electron beam, a crossover is formed at a point 638 on the upstream side of the molded lens 604 by the condenser lens 602, and this point 638 is a conjugate position with the main surface of the molded lens 605.

[Deflector]
Two-stage deflectors 606 and 607 arranged on the downstream side of the molded lens 605 are for deflecting the primary electron beam and have a role of guiding the primary electron beam to a beam separator to be described later. .

[Beam separator]
The beam separator is configured by a combination of a coil 608 and a permalloy core 611. This beam separator is for deflecting the primary electron beam toward the sample 615 side. The beam separator is disposed outside a metal cylinder 633 having an inner diameter equal to the inner diameter of an upper electrode 612 of an objective lens described later. The cylindrical metal 633 has a simple cylindrical shape on the objective lens side, but the taper is formed on the electron gun 601 side so that the primary electron beam is not blocked, and the diameter is large. This beam separator also functions as a secondary optical system element as will be described later.

[Objective lens]
The objective lens has a function of reducing the primary electron beam and focusing on the surface of the sample 615. The objective lens according to this embodiment includes an upper electrode 612, a center electrode 613, and a lower electrode 614. The upper electrode 612 is insulated so as to be given a dynamic focus potential. The center electrode 613 has a truncated cone shape in the vicinity of the optical axis on the sample 615 side, and a cylindrical opening is formed at the center thereof. On the other hand, the side away from the optical axis has a planar shape. It has been confirmed by simulation that the above-mentioned shape has a focusing ability at a low applied voltage when the inner diameter of the cylinder is 6 mm or more, and can reduce field curvature and astigmatism. The lower electrode 614 on the sample 615 side is a planar electrode having a larger bore diameter than the central electrode 613, and the electric field strength on the surface of the sample 615 can be adjusted by a voltage applied to the lower electrode 614. Further, by adjusting the voltage applied to the lower electrode 614, it is possible to change the value of the axial chromatic aberration coefficient or the spherical aberration coefficient while maintaining the in-focus condition. The upper chromatic aberration correction lens 622 can have a negative axial chromatic aberration coefficient, a negative spherical aberration coefficient, or a close value. This objective lens requires the thickness of the upper electrode 612 to be at least about three times the opening diameter of the upper electrode 612 in order to make the axial electric field distribution substantially zero outside the electrode. Since the inner diameter of the metal cylinder 633 is matched with the inner diameter of the opening of the upper electrode 612, a normal lens action can be obtained with the thin upper electrode 612. Specifically, the metal cylinder 633 and the upper electrode 612 are at the same potential, and the metal cylinder 633 is also the same as part of the electrode.

[Secondary optical system]
Next, the secondary optical system will be described.

[Objective lens]
As described above, the objective lens functions as a primary optical system element, but also functions as a secondary optical system element. Specifically, it has a function of focusing a secondary electron beam emitted from the sample 615 into a parallel electron beam.

[Beam separator]
As described above as the primary optical system element, the beam separator deflects the primary electron beam, but also functions as a secondary optical system element, and the secondary electron beam emitted from the sample 615. Is deflected toward the secondary optical system and separated from the primary electron beam.

[NA aperture plate]
The NA aperture plate 616 disposed on the downstream side of the beam separator has an NA aperture formed in the vicinity of the optical axis, and has a function of forming a secondary electron beam. The NA aperture plate 616 is disposed at a position of, for example, 63 mm from the sample 615, and both the lateral chromatic aberration and the coma aberration can be reduced, so that the distance between the two beam separation deflectors 608, 611 and 617, 618 is reduced. It was made to provide in.

[Deflector]
The deflector disposed on the downstream side of the NA aperture plate 616 includes a combination of a coil 617 and a permalloy core 618. This deflector is for further deflecting the secondary electron beam deflected by the beam separator and directing it to a secondary electron beam detector to be described later.

[Electrostatic lens]
The electrostatic lens 619 disposed on the downstream side of the deflector 612 is for enlarging the secondary electron beam without rotating the deflection direction. The electrostatic lens 619 is positioned on the sample at the object point of the axial chromatic aberration correction lens 622. An image that is approximately the same size as the image is formed.

[Taper opening plate]
A tapered aperture plate 638 is disposed on the downstream side of the electrostatic lens 619. This tapered aperture plate is for continuously connecting the bore diameter of the electrostatic lens and the bore diameter of the deflector 620 described later. For this reason, the bore diameter on the electrostatic lens 619 side of the tapered opening is substantially equal to the bore diameter of the electrostatic lens, while the bore diameter on the deflector 620 side is substantially equal to the bore diameter of the deflector 620.

[Axis alignment deflector]
Axis alignment deflectors 620 and 621 are disposed downstream of the tapered aperture plate 638. The axial alignment deflectors 620 and 621 are for aligning the secondary electron beam with the axial chromatic aberration correction lens 622 disposed on the downstream side.

[Axial chromatic aberration correction lens]
The axial chromatic aberration correction lens 622 is for correcting axial chromatic aberration generated in the secondary electron beam, and includes a Wien filter. The axial chromatic aberration correction lens 622 is provided with a plurality of sets of generally sector-shaped electromagnetic poles as shown in FIG. 18, and these are combined to constitute the axial chromatic aberration correction lens 622. In the axial chromatic aberration correction lens 622 of the present embodiment, 12 electromagnetic poles are provided. In FIG. 18, only three electromagnetic poles are shown. This electromagnetic pole has the same structure as that shown in FIG.

[Axis alignment deflector]
Axis alignment deflectors 623 and 624 are arranged on the downstream side of the axial chromatic aberration correction lens 622. The axis alignment deflectors 623 and 624 are for aligning the secondary electron beam with the optical axis of the lenses 625 and 626.

[Auxiliary lens]
An auxiliary lens 626 disposed on the downstream side of 624 is for forming an image of the NA aperture on the main surface of a magnifying lens 625 described later.

[Magnifying lens]
The magnifying lens 625 is for imaging a secondary electron beam image formed on the main surface of the auxiliary lens 626 on any of a plurality of auxiliary lenses 630 of the magnifying lens 629 described later.

[Axis alignment deflector]
Axis alignment deflectors 627 and 628 are disposed on the downstream side of the lens 625. The axis aligning deflectors 627 and 628 are for aligning the secondary electron beam with the optical axes of the lenses 629 and 630.

[Auxiliary lens]
The auxiliary lens 630 is a lens for forming images with various magnifications, and is formed by a plurality of lens groups. Specifically, the auxiliary lens of the present embodiment has three lenses, the upstream lens is used to form an image with a small final magnification, and the downstream lens has a large final magnification. It is used when forming an image, that is, an image having a minimum pixel size on the sample surface.

[Magnifying lens]
The magnifying lens 629 is for magnifying the image formed by the auxiliary lens 630 to form an enlarged secondary electron image on the MCP that is the secondary electron beam detector 632.

[Deflector]
A deflector 631 disposed on the downstream side of the magnifying lens 629 is a deflector for forming a secondary electron image at a predetermined position of the MCP. By using an electrostatic deflector, the speed unevenness of the sample stage is reduced. It has a function of dynamically correcting a position error caused by the above.

[Secondary electron beam detector]
A secondary electron beam detector 632 is provided on the downstream side of the deflector 631. The secondary electron beam detector 632 detects the secondary electron beam emitted from the sample 615 and observes the state of the sample surface. Specifically, it is an MCP (multichannel plate) in which a plurality of optical fibers are bundled.

[Action]
Next, the operation of the electron beam apparatus EB8 according to this embodiment will be described.

  The primary electron beam emitted from the electron gun 601 is focused by the condenser lens 602 and irradiates the rectangular shaped opening of the shaped opening plate 603 with uniform intensity. The primary electron beam that has passed through the molded aperture plate 603 forms a crossover at a point 640 in front of the molded lens 604. The position of the point 640 corresponds to a position conjugate with the main surface of the second molded lens 605. The reduction rate of the primary electron beam image formed by the molded aperture of the molded aperture plate 603 is adjusted by the two-stage molded lenses 604 and 605, and a rectangular primary electron beam image is formed on the surface of the sample 615 through the objective lens.

  The incident angles to the beam separators 608 and 611 are small when the landing energy is high (orbit close to the optical axis 10 of the primary optical system), and large when the landing energy is low (as shown by the solid line 9). The two-stage deflectors 606 and 607 are adjusted so as to take a trajectory from the outside of the optical axis 610. Here, the landing energy is energy that the electron beam has when entering the sample. Since the electron beam is bent differently depending on the landing energy level, the adjustment as described above is possible.

  The primary electron beam that has passed through the deflector 607 enters the beam separator and is deflected toward the sample 615. The deflected primary electron beam is focused by the objective lens and irradiated on the surface of the sample 615.

  The secondary electron beam emitted from the irradiation region of the sample 615 is focused by the objective lens to be a parallel beam. And it is deflected to the secondary optical system side by the beam separator. The deflected secondary electron beam is shaped by the NA aperture of the NA aperture plate 616 and is incident on the deflector. The secondary electron beam incident on the deflector is deflected. Since the secondary electron beam is a parallel beam between the beam separator and the deflector, the deflection chromatic aberration does not occur if the absolute values of the deflection angles of the beam separator and the deflector are equal and the deflection direction is reversed. . However, since astigmatism occurs between the beam separator and the deflector, astigmatism correction currents are superimposed on the coils 608 and 617, respectively. By providing deflectors 617 and 618 on the detector side outside a metal cylinder having an inner diameter equal to the inner diameter of the lower electrode of the electrostatic lens 619, the thickness of the lower electrode of the electrostatic lens 619 can be reduced.

  The secondary electron beam forms an approximately equal-magnification image on the object point of the axial chromatic aberration correction lens 622 by the electrostatic lens 619. When this image is a magnified image of 2 times or more, the axial chromatic aberration coefficient exceeds 1 m. Since the size of the axial chromatic aberration correction lens 622 increases in proportion to the square of the axial chromatic aberration coefficient, it becomes enormous. On the other hand, when a reduced image is formed with a magnification of the electrostatic lens 619 of 0.6 or less, the axial chromatic aberration coefficient and the spherical aberration coefficient are small, but the axial chromatic aberration and the axial chromatic aberration generated in the image magnified by the downstream magnifying optical system are reduced. Both spherical aberrations become large values. If these two aberrations are not corrected accurately, there is a problem that the large NA value cannot be used, that is, the detection efficiency of the secondary electron beam is lowered, and the magnification of the two-stage lens is made 0.6 to 2 times. Is appropriate.

  Two stages of axial alignment deflectors 620 and 621 are required between the electrostatic lens 619 and the axial chromatic aberration correction lens 622, but the space between them is narrow. For this reason, it is desirable to provide the deflector 620 as close to the electrostatic lens 619 as possible. In this embodiment, a cylinder 638 in which a tapered through hole is formed is inserted to connect the inner diameter of the electrostatic lens 619 and the inner diameter of the deflector 620. Thereby, the axial electric field distribution of the electrostatic lens 619 can be set to 0 before the deflector 620.

  The excitation voltage and excitation current applied to each electromagnetic pole of the axial chromatic aberration correction lens 622 are determined as follows. That is, first, an excitation voltage and an excitation current for generating a dipole electric field and a dipole magnetic field are determined so as to satisfy the Wien condition. Next, an excitation voltage and an excitation current that give a quadrupole electric field and a quadrupole magnetic field that generate negative axial chromatic aberration are determined. Furthermore, a hexapole magnetic field that generates negative spherical aberration, an excitation voltage and an excitation current that generate an electric field are determined, and a total of these excitation voltage and excitation current may be given.

  The image point of the axial chromatic aberration correction lens 622 is formed on the main surface of the auxiliary lens 626 of the magnifying lens 625. At this time, the axial chromatic aberration of the secondary electron beam image at the auxiliary lens 626 is corrected. That is, both the low energy secondary electrons and the high energy secondary electrons form a secondary electron image at the position of the auxiliary lens 626. The excitation voltage of the auxiliary lens 626 reduces the off-axis aberration generated in the magnifying lens by causing the image of the NA aperture plate 616 to coincide with the main surface of the magnifying lens 625. The magnifying lens 625 forms a secondary electron image formed on the main surface of the auxiliary lens 626 on one of the auxiliary lenses 630 of the final magnifying lens 629, and the image is enlarged by the magnifying lens 629 (secondary electron beam detector (MCP)). The auxiliary lenses 626 and 630 perform the lens action so that the chief rays pass through the lens centers of the magnifying lenses 625 and 629 from the edge of the field of view. 629. The deflector 631 is a deflector for forming a secondary electron image at a predetermined position of the MCP, and by using an electrostatic deflector, A function was also provided to dynamically correct position errors caused by sample stage speed variations.

[Ninth Embodiment]
FIG. 19 shows an electron beam apparatus EB9 according to the ninth embodiment of the present invention. The electron gun 651 has a LaB6 cathode having a tip curvature radius of 30 μmR. An electron beam emitted from the electron gun 651 is irradiated with a plurality of apertures 654 with an irradiation intensity uniformity of 90% or more by adjusting a region where the irradiation intensity uniformity is 90% or more by the two-stage condenser lenses 652 and 653. To do. The aberration of the primary electron beam converted into a multi-beam through the aperture 654 is adjusted by the NA aperture plate 656 and reduced by the reduction lens 657 and the objective lens 662 to form a plurality of electron beams on the sample 665. An axial chromatic aberration correction lens 658 is provided between the two stages of lenses, and an objective lens that is normally operated at an NA of about 50 mrad can be operated at an NA of about 100 mrad and twice as large. The electrostatic deflector 660 corrects the deflection aberration generated by the beam separator 661 and causes the primary electron beam arranged perpendicular to the sample 665 to enter the sample 665 again again in cooperation with the beam separator 661. Scanning on the sample 665 was performed by deflectors 659 and 663, and a deflection fulcrum 691 (see FIG. 20B) in which coma aberration and deflection chromatic aberration due to deflection were reduced was calculated by simulation. The objective lens 662 has a condition that the magnetic gap 666 is on the sample 665 side, an axially symmetric electrode 664 is provided, and spherical aberration is reduced. The objective lens 662 has a bore diameter of 15 mnR so that an electromagnetic deflector for a beam separator, a vacuum seal member 667, a scanning deflector 663 at the second stage, and an axially symmetric electrode 664 can be provided therein. Particularly, in order to provide the coil 661 on the atmosphere side and the electrostatic deflector 663 and the axially symmetric electrode 664 on the vacuum side, it is necessary to increase the bore diameter of this lens. Reference numeral 668 denotes a vacuum seal O-ring, and the coil 661 is divided into two parts and fitted from the side. Secondary electrons emitted from the scanning point of the sample 665 are deflected to the left in FIG. 19 by the beam separator 661. The first secondary electron image can be positioned 30 mm from the sample, and is focused by the magnetic lens 670 to form a reduced image on the object point of the aberration correction lens 671. In this reduced image, the axial chromatic aberration coefficient was set to 100 mm or less and the spherical aberration coefficient was set to 100 mm or less. As a result, the Wien filter for correcting both the axial chromatic aberration and the spherical aberration could be reduced in size. The secondary electron image was formed by the magnifying lenses 672 and 673 so that the secondary electron beam detector 674 had an image with a magnification ratio required.

  The sectional shape of the aberration correction lenses 658 and 671 is shown in FIG. The electrode / magnetic pole 683 has a T-shaped cross section, is radially on the side near the optical axis, the portion where the coil is wound is substantially the same thickness, and the portion where the screw (684) is fastened to the core 681 is a thick T shape. It has become. However, as shown in 685 and 686, the right-angled portion of the edge and corner is eliminated so that the magnetic flux does not leak. The insulating spacer has a small thickness, but has a dimension that fits from the T-shaped electromagnetic pole so that the creeping distance from the electrode to the core is long. A voltage applied to the electrode was obtained by inserting a lug 689 into one of the tightening screws and pressing the lead wire 690 to the lug. Insulation between the screw and the core was performed by a spacer 688. The cover 687 was made of a plate having the same potential as each electrode, and the coil 686 was surrounded by an insulator so that no discharge was generated between the cover 687 and the coil 686.

  Since the operating NA aperture is as large as 100 mrad, if the sample surface is moved up and down by 1 μm, a blur of 100 nm occurs. Therefore, the sample height is measured with high accuracy prior to the sample evaluation, and the evaluation is performed while dynamically adjusting the focus. I did it. The principle of measuring the height of the sample is shown in FIG. In FIG. 20A, normal scanning is performed with the point 691 as a deflection fulcrum. When measuring the sample surface height, the deflection fulcrum is moved to the point 692 or below. This changes the deflection ratio of the deflectors 659 and 663. In this case, the deflection fulcrum can be lowered by sequentially decreasing the voltage applied to the deflector 663. A pattern 693 having two widths (see FIG. 20B) is found on the sample surface, and d is gradually reduced at that position to scan this pattern. When d is positive, as shown by reference numeral 694 in FIG. 20C, an image or intensity distribution that is wide first and then narrow is obtained. When d is decreased, L increases steadily. When d is 0, ∞, that is, the image disappears. When d is further reduced (negative value), an elephant having a large L is obtained first, and a pattern 695 in which front and rear are reversed appears. It can be said that the sample surface is in the middle of d2 and d2 where L ′ is substantially equal to L.

  If the relationship between the sample surface position (d1 + d2) / 2 and the focusing condition is examined in advance, the height of the entire sample surface is measured, and the corresponding focusing condition is set in a table, then when pattern evaluation is performed, You can read the palm condition from the table. In order to adjust the focusing condition in a short time, the focusing condition can be adjusted by superimposing the same voltage on all the electrodes of the eight-pole electrostatic deflector. The voltage may be lowered to increase the lens condition, and the voltage may be increased to weaken the lens condition.

FIG. 21 shows an example in which a multi-beam of 4 rows and 4 columns is formed from an electron beam emitted from a LaB6 cathode electron gun operating under a space charge limiting condition, and the line width is measured. When the raster pitch is n times the pixel size, the operation can be performed without waste. In the case of a beam of M rows and N columns, if the number of beams in the direction close to the χ axis is N, the angle θ for rotating the multi-beam with respect to the χ axis is θ = Sin− ¹ (1 / N). Are equally spaced. The inter-beam distance D is D = Nd as apparent from FIG.

  When the pattern 101 parallel to the y-axis is scanned with the beam of M rows and N columns, the signal waveform of reference numeral 6102 in FIG. 21B is obtained from the detector from each beam. In order to obtain a line image from these signals, each signal is shifted by d in the y direction and shifted by DSinθ in the χ direction, whereby a two-dimensional image of the line 6101 in FIG. In order to obtain the line width, all signal waveforms obtained by shifting the signal waveform by DSinθ, 2DSinθ,... (MD) Sinθ are added to improve the S / N ratio, for example, a threshold of 50% of the signal amplitude. The dimension exceeding is defined as the line width.

When the pattern is a resist pattern, if the dose is 1 μc / cm ² or more, the resist pattern may be altered. When the electron gun is used under a space charge limited condition, the number of secondary electrons per pixel can be 4050/16 = 253 / pix. If the pixel size is ε (nm), the dose Q (Coulomb / cm ² ) at 253 / Sin is

ε＝１０ｎｍでは

For ε = 10nm

１μｃ／ｃｍ^２以下にするには場所を変えて４０回走査し、加算処理すればよい。

In order to make it 1 μc / cm ² or less, it is only necessary to scan 40 times at different locations and perform addition processing.

  For example, it can be used for an electron beam apparatus used for inspection of a semiconductor wafer.

1 is a schematic diagram of an electron beam apparatus according to a first embodiment of the present invention. It is a top view which shows the electromagnetic pole which comprises the axial chromatic aberration correction lens used with the electron beam apparatus disclosed in FIG. It is a figure which shows the electromagnetic deflector used with the electron beam apparatus disclosed by FIG. 1, FIG. 3 (A) is a front view, FIG.3 (B) is a side view, FIG.3 (C) is a top view. The schematic of the electron beam apparatus which concerns on the 2nd Embodiment of this invention is shown. It is the schematic of the electron beam apparatus which concerns on 3rd Embodiment of this invention. It is explanatory drawing which shows that a crossover shifts | deviates to an optical axis direction with the electron beam apparatus disclosed in FIG. It is sectional drawing which shows the structure of the condenser lens for shifting crossover as disclosed in FIG. It is a figure which shows the ideal arrangement | positioning of the primary electron beam in the surface of a sample. It is a figure explaining opening arrangement | positioning of the multi-aperture board for implement | achieving arrangement | positioning of the primary electron beam shown in FIG. 8 using the electron beam apparatus disclosed in FIG. FIGS. 10A and 10B are schematic views showing an electron beam apparatus according to a fourth embodiment of the present invention, FIG. 10A shows an overall outline, and FIG. 10B is a view for explaining a case where a Win filter is approximated by a thin lens. It is. It is the schematic which shows the electron beam apparatus which concerns on 5th Embodiment of this invention. FIG. 10 is a schematic view of an electron beam apparatus according to a sixth embodiment of the present invention. It is the schematic of the electron beam apparatus which concerns on the 7th Embodiment of this invention. It is explanatory drawing which shows the example of arrangement | positioning of the electron beam on a sample. It is a figure explaining the processing state of the optical fiber used for a detector, FIG. 15 (A) is a front view, FIG.15 (B) is a side view, FIG.15 (C) is a bottom view. FIG. 16 is a perspective view illustrating a state in which a plurality of optical fibers disclosed in FIG. 15 are bundled and joined to form a detection surface. It is the schematic of the electron beam apparatus which concerns on the 8th Embodiment of this invention. FIG. 18 is a partial schematic diagram illustrating a structure of an axial chromatic aberration correction lens disclosed in FIG. 17. It is the schematic of the electron beam apparatus which concerns on the 9th Embodiment of this invention. It is explanatory drawing explaining the method to measure sample surface height. It is explanatory drawing explaining the method of measuring line | wire width with a some electron beam.

Explanation of symbols

EB 1 Electron beam device 1 Electron gun 2 Multi-aperture plate 3, 4 Reduction lens 5, 6 Axial chromatic aberration correction lens 7 Auxiliary deflector and first scanning deflector 8 for beam separator 8 Beam separator 9 Objective lens 10 Sample 11 Electromagnetic deflector 11a Magnetic coil 11b Magnetic circuit G Magnetic gap 12 Secondary optical system lens 13 Magnifying lens 14 Secondary electron beam detector 15 Cylindrical core 16 Insulating spacer 17 Fixing screw 18 Third electromagnetic pole part (to the core of the electromagnetic pole) Fixed part)
19 1st electromagnetic pole part (radiation upper surface (namely, surface which includes an optical axis when extended) of an electromagnetic pole)
20 Second electromagnetic pole part (surface with almost constant thickness)
21 Permalloy pipe 201 Electron gun 202, 203 Condenser lens 204 Multi-aperture plate 206 Reduction lens 208 Electrostatic deflector 209 Beam separator 210 Electrostatic deflector 212 Objective lens 213 Sample 211 Axisymmetric electrode 209, 214 Electromagnetic deflector 225 Electrostatic Lens 215 Electromagnetic deflector 216 Rotating lens 218 Secondary electron beam detector 301 Electron gun 325 Condenser lens 302 Multi-aperture plates 303 and 304 Reduction lenses 309, 310 and 326 Reduction image 305 Auxiliary lenses 306 and 307 for crossover control Axis alignment deflection 308 On-axis chromatic aberration correction lens 311 Crossover control lens 312 Electrostatic deflector 313 Beam separator 314 Scanning second deflector 315 Objective lens 316 Sample 317 Deflectors 318 and 319 Magnifying lens 320 Secondary electron beam detector 33 CeB6 cathode 331 electron gun 333 condenser lens 334 shaped opening 335,326 zoom lens 337 a deflector 338 objective lens 339 Sample 340 second objective lens,
341 Auxiliary lens for NA aperture image control,
352 NA aperture plate,
353 SE image 355 NA aperture image 342, 343 Wien filter 344 SE image image line 345 NA aperture image image line 346, 347 SE image 354 NA aperture image control auxiliary lens 348, 349 Magnifying lens 350 One-dimensional or two-dimensional Dimensional secondary electron beam detector 351 Magnification variable NA aperture image control auxiliary lens 401 Electron gun 402, 403 Condenser lens 404 Multi-aperture plate 405 Rotating lens 406 On-axis chromatic aberration correction lens 407 Reduced image formation point 408 On-axis chromatic aberration correction Lens image point 409 Electrostatic deflector 410 Beam separator 411 Objective lens 412 Sample 413 Electromagnetic deflector 414 Electrostatic lens 415 Electromagnetic deflector 416 Magnified image forming point 417 Aberration correction lens 418 Equal magnification image forming point 419 Magnifying lens 420 Two Secondary electron beam detector 421 Optical axis 422 Electromagnetic pole 423 Excitation Coil 424 Metal cover 425 Screw 426 Screw 427 Insulating spacer 428 Intermediate point 429 of on-axis chromatic aberration correction lens 6 Trajectory 430 indicating imaging conditions Intermediate point 431 of aberration correction lens 17 Trajectory 432 indicating imaging conditions Outer cylinder 433 Scanning deflection 501 Electron gun 502, 503 Condenser lens 504 Multi-aperture plate 505 Rotating lens 521 NA aperture plate 506 Reduction lens 507 Electrostatic deflector 508 Beam separator 509 consisting of electromagnetic deflector Objective lens 510 Axisymmetric electrode 509 Objective lens 511 Sample 509 Objective lens 508 Beam separator 512 Electromagnetic deflector 513 Electrostatic lens 515 Electromagnetic deflector 516 Removable lens 518 Secondary electron beam detector 601 Electron gun 602 Condenser lens 603 Molded aperture plates 604 and 605 Molded lenses 606 and 607 Deflector 6 8,611 Beam separator 612, 613, 614 Electrode 615 Sample 616 NA aperture 617, 618 Deflector 619 Electrostatic lens 620, 621 Deflector 622 On-axis chromatic aberration correction lens 623, 624 Axis alignment deflector 625 Magnifying lens 626 Auxiliary lens 627, 628 Axis alignment deflector 629 Lens 630 Auxiliary lens 631 Deflector 632 Secondary electron beam detector 633 Metal cylinder 638 Tube with taper hole

Claims (30)

An electron gun that emits a primary electron beam; a multi-aperture plate having a plurality of apertures through which a portion of the primary electron beam passes; a condenser lens that reduces the primary electron beam passing through the aperture; and reduced primary electrons A primary optical system comprising an objective lens for imaging a line on the sample surface;
A deflector group that deflects a secondary electron beam emitted from the sample, a magnifying lens that magnifies the secondary electron beam deflected by the deflector group, and a secondary electron that detects the magnified secondary electron beam A secondary optical system including a line detector,
An electron beam apparatus comprising: an axial chromatic aberration correction lens including a non-dispersive Wien filter that generates axial chromatic aberration corresponding to axial chromatic aberration generated in the objective lens in the primary optical system.   The Wien filter is composed of a plurality of electromagnetic poles extending radially from the optical axis of the primary electron beam, each electromagnetic pole extending in a fan shape from the vicinity of the optical axis, and an end of the first electromagnetic pole part 2. The electron beam according to claim 1, comprising: a second electromagnetic pole portion extending at a constant thickness from the second electromagnetic pole portion; and a third electromagnetic pole portion extending in a circumferential direction from an end portion of the second electromagnetic pole portion. apparatus.   The deflector group includes two deflectors, the first deflector deflects both the primary electron beam and the secondary electron beam, and the second deflector deflects only the secondary electron beam. The electron beam apparatus according to claim 1, wherein the electron beam apparatus is characterized. A pattern evaluation method using an electron beam,
Irradiating a plurality of openings with a primary electron beam emitted from an electron beam to form a plurality of primary electron beams,
Reducing the plurality of primary electron beams and generating a negative axial chromatic aberration corresponding to the positive axial chromatic aberration generated in the objective lens through the axial chromatic aberration correcting lens;
The primary electron beam is deflected by an electrostatic deflector and an electromagnetic deflector to be perpendicular to the surface of the sample,
The primary electron beam directed perpendicular to the sample is reduced with an objective lens and the surface of the sample is scanned,
A secondary electron beam emitted from the sample is deflected toward a secondary optical system by a deflector group including two deflectors;
A pattern evaluation method, wherein the deflected secondary electron beam is detected by a secondary electron beam detector. An electron gun that emits a primary electron beam, a condenser lens that reduces the primary electron beam, a multi-aperture plate having a plurality of openings through which a part of the reduced primary electron beam passes, and the multi-aperture plate. An electron beam apparatus comprising an objective lens that forms an image of a plurality of primary electron beams on a sample surface,
2. The electron beam apparatus according to claim 1, wherein the condenser lens is formed so that a primary electron beam farther from the optical axis due to spherical aberration forms a crossover at a predetermined position closer to the electron gun.   6. The electron according to claim 5, wherein an angle formed by the optical axis direction and the direction of the opening formed on the outermost side of the multi-aperture plate is larger than a predetermined value with respect to the position of the crossover. Wire device.   6. The condition of 1 <D / d ≦ 3 is satisfied, where D is a diameter of the condenser lens and d is a distance between openings at both ends of the multi-aperture plate. Electron beam equipment.   The primary optical system is set such that the arrangement of the primary electron beams on the surface of the sample is distorted into a barrel shape when the openings are arranged in a lattice pattern at predetermined intervals on the multi-aperture plate. The electron beam apparatus according to any one of claims 5 to 7.   9. The electron according to claim 8, wherein each of the openings is disposed in the multi-aperture plate in a state of being distorted like a pincushion so as to correct the distortion of the barrel. Wire device. In an aberration correction lens mechanism including an on-axis chromatic aberration correction lens and an objective lens arranged along the optical axis,
Both lenses are arranged so that the position of the image point or object point of the objective lens coincides with the position of the object point or image point of the axial chromatic aberration correction lens, and the image point and object point of the axial chromatic aberration correction lens The aberration correction lens mechanism further comprises first and second auxiliary lenses having main surfaces located on the first and second auxiliary lenses. In an aberration correction lens mechanism that corrects longitudinal chromatic aberration or spherical aberration using a Wien filter,
The distance between the object point and the image point of the Wien filter is longer than the distance between both end faces in the optical axis direction of the Wien filter, and the trajectory of the primary ray of the primary electron beam from the object point away from the optical axis is An aberration correction lens mechanism that is controlled so as to have a point-symmetrical trajectory with respect to an intermediate point. In an aberration correction lens mechanism that corrects longitudinal chromatic aberration or spherical aberration using a Wien filter,
The distance between the object point and the image point of the Wien filter is made longer than the distance between both end surfaces in the optical axis direction of the Wien filter, and crossover images are formed at two locations at equal distances from the intermediate surface of the Wien filter in the optical axis direction. The control of the crossover position is set by an auxiliary lens provided at an object point of the Wien filter. In an aberration correction lens mechanism including an on-axis chromatic aberration correction lens and an objective lens arranged along the optical axis,
Both lenses are arranged so that the position of the image point or object point of the objective lens coincides with the position of the object point or image point of the axial chromatic aberration correction lens, and the axial chromatic aberration correction lens is a two-stage Wien filter. An aberration is characterized in that an image point is formed at an intermediate point in the optical axis direction between the Wien filters, and a crossover image is formed at two locations at equal distances from the intermediate point in the optical axis direction. Correction lens mechanism. In this method, pattern evaluation is performed using a plurality of primary electron beams by the aberration correction lens mechanism arranged on the both lenses so that the position of the image point of the aberration correction lens and the position of the object point of the objective lens coincide with each other. And
Irradiating a plurality of openings with the primary electron beam to generate a plurality of primary electron beams; and
Focusing the primary electron beam to form a plurality of aperture images at the object point of the aberration correction lens;
Forming first and second crossover images at the same distance with respect to the intermediate surface of the aberration correction lens by a first auxiliary lens provided at an object point of the aberration correction lens;
Focusing and scanning the plurality of primary electron beams on the sample surface with the objective lens;
Deflecting a plurality of secondary electron beams emitted from the surface of the sample with a beam separator toward a secondary optical system;
Expanding the mutual spacing of the deflected plurality of secondary electron beams;
Detecting each of the secondary electron beams having an increased mutual spacing;
A pattern evaluation method comprising:   In an electron beam apparatus that can correct axial chromatic aberration or spherical aberration using a multipole lens, the blurring of the electron beam caused by fluctuations in the power supply for driving the lens or poor processing accuracy of the lens is sufficiently reduced on the sample surface. An electron beam apparatus characterized by determining a reduction ratio of the optical system from the image plane to the sample plane of the multipole lens.   An electron beam apparatus that uses a multipole lens to correct axial chromatic aberration or spherical aberration generated in an axially symmetric optical system in an electron beam apparatus that expands and detects a secondary electron beam emitted from a sample with an magnifying optical system. Thus, the image of the necessary resolution dimension of the sample on the object surface of the multipole lens is sufficiently larger than the blur of the electron beam caused by the accuracy of the power source driving the multipole lens or the processing accuracy of the lens. An electron beam apparatus characterized by that. A method for evaluating a fine pattern on a sample surface,
Calculating the blur due to the multipole lens generated based on the fluctuation of the power source connected to the multipole lens;
Determining a pixel size on the surface;
Calculating a ratio between the calculated blur value by the multipole lens and the pixel size value;
And a step of making the magnification of the optical system from the image plane to the sample plane of the multipole lens larger than the above ratio. The electron beam apparatus according to claim 15, wherein
2. The electron beam apparatus according to claim 1, wherein the multipole lens is a Wien filter, and the dimension of the Wien filter in the optical axis direction is ½ or less of the distance from the object point to the image point. In the fine pattern evaluation method according to claim 17,
The fine pattern evaluation method, wherein the multipole lens is a Wien filter, and the dimension of the Wien filter in the optical axis direction is ½ or less of the distance from the object point to the image point.   16. The pattern evaluation method according to claim 15, wherein the magnification of the optical system is 1/5 or less.   18. The fine pattern evaluation method according to claim 17, wherein the magnification of the optical system is 1/5 or less. An apparatus for irradiating a sample with a plurality of electron beams, detecting a secondary electron beam emitted from the sample, and evaluating the sample,
The plurality of electron beams are electrically scanned in one axis direction, the sample stage is mechanically scanned in the direction of the other axis orthogonal to the one axis direction, and the arrangement interval of the plurality of beams is close to the electric scanning direction. An electron beam apparatus characterized in that the direction is wide and the direction close to the mechanical scanning direction is narrow.   A detector that detects a plurality of electron beams, an optical fiber whose tip is ground into a rectangle or a square and a plurality of fibers are bundled and joined, a scintillator applied to the tip of the optical fiber, and other optical fibers. A detector comprising a photomultiplier connected to an end.   A separator for separating a plurality of secondary electron beams emitted from a sample, an electrostatic lens for reducing or enlarging the separated secondary electron beams, and vertically deflecting the reduced or enlarged secondary electron beams An electron beam apparatus, comprising: a deflector for detecting the deflected secondary electron beam; and a detector for detecting the deflected secondary electron beam. A method for detecting secondary electron beams emitted from a sample;
Separating a secondary electron beam emitted from a plurality of scanning points from a primary electron beam by a beam separator;
Enlarging the separated secondary electron beam with a lens and forming an image on a detection surface;
Applying a positive high voltage to the detection surface;
A secondary electron beam detection method comprising: In an apparatus for evaluating a sample by irradiating the sample with an electron beam and detecting secondary electrons emitted from the sample,
A primary electron optical system, a secondary electron optical system, an axial chromatic aberration correction lens, an objective lens composed of an electrostatic lens, and a beam separator. The beam separator has the same bore diameter as the objective lens at least on the objective lens side. An electron beam apparatus, wherein the electron beam apparatus is formed outside a metal cylinder having a bore diameter. In an apparatus for evaluating a sample by irradiating the sample with an electron beam and detecting secondary electrons emitted from the sample,
It has a primary electron optical system, a secondary electron optical system, an axial chromatic aberration correction lens, an objective lens, and a beam separator. The sample is measured while measuring the Z-direction position on the sample surface prior to sample evaluation, and dynamically adjusting the sample. The electron beam apparatus characterized by performing evaluation of. An apparatus for irradiating a sample having a pattern with an electron beam and measuring the line width of the sample,
L _a B ₆ electron gun, an electron beam apparatus characterized by having a longitudinal chromatic aberration correction lens. 29. The electron beam apparatus according to claim 28, wherein the electron gun is operated under a space charge limiting condition, and a local irradiation amount of the sample is set to 1 μc / cm ² or less.   An apparatus for irradiating a sample with an electron beam and evaluating the sample, a Wien filter for correcting axial chromatic aberration, a ring-shaped part having the same diameter as the Bohr diameter of the Wien filter, and its parts An electron beam apparatus comprising an axial alignment deflector having the same diameter.

Images