JP2006509871A - 放射源と発光体を有する照射システム - Google Patents
放射源と発光体を有する照射システム Download PDFInfo
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- JP2006509871A JP2006509871A JP2004560043A JP2004560043A JP2006509871A JP 2006509871 A JP2006509871 A JP 2006509871A JP 2004560043 A JP2004560043 A JP 2004560043A JP 2004560043 A JP2004560043 A JP 2004560043A JP 2006509871 A JP2006509871 A JP 2006509871A
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- 230000005855 radiation Effects 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 90
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 24
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 21
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 21
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 20
- 229910052788 barium Inorganic materials 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims abstract description 17
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 16
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 16
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 13
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 9
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 5
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 31
- 239000011575 calcium Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 14
- 230000005284 excitation Effects 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 12
- 239000011777 magnesium Substances 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 4
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
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- -1 lanthanoid activated phosphor Chemical class 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910005540 GaP Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- XQTIWNLDFPPCIU-UHFFFAOYSA-N cerium(3+) Chemical compound [Ce+3] XQTIWNLDFPPCIU-UHFFFAOYSA-N 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- MGVUQZZTJGLWJV-UHFFFAOYSA-N europium(2+) Chemical compound [Eu+2] MGVUQZZTJGLWJV-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
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- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
360nmから550nmの範囲の波長の光を放射する発光装置と、Eu2+で活性化されたCa-Al-SiO-N酸窒化ガラスからなる発光体とを有し、発光装置からの発光の一部は、発光体によって波長変換された後、外方に放射されることを特徴とする。
前記少なくとも1の蛍光物質は、一般式が、
EA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、
で表されるオキシド−ニトリド−シリケートであり、少なくとも1の元素EAは、Mg、Ca、Sr、BaおよびZnからなる群から選択され、少なくとも1の元素Bは、Al、GaおよびInからなる群から選択され、前記オキシド−ニトリド−シリケートは、セリウム、ユーロピウム、テルビウム、プラセオジミウムおよびそれらの混合物からなる群から選択されるランタノイドで活性化されることを特徴とする照明システムが提供される。
MS:Eu、Ce、Cuで表され、群M=Mg、Ca、SrおよびZnから選択される少なくとも1の元素を有する、MS:Eu、Ce、Cu;
MN2S4:Eu、Ceで表され、群M=Mg、Ca、SrおよびZnから選択される少なくとも1の元素と、群N=Al、Ga、In、Y、LaおよびGdから選択される少なくとも1の元素とを有する、MN2S4:Eu、Ce;
(Re1-rSmr)3(Al1-sGas)5O12:Ce、ただし0≦r<1および0≦s≦1、で表され、ReはY、Lu、Sc、LaおよびGdから選択される、(Re1-rSmr)3(Al1-sGas)5O12:Ce;および
(Ba1-x-y-zSrxCay)2SiO4:Euz、ただし0≦x≦1、0≦y≦1および0<z<1;
の群から選択されることが好ましい。
(Sr1-xEAx)2-zSi5-a(Al1-bBb)aN8-aOa:Lnz、ここで0<a<5、0<b≦1、0<x≦1および0<z≦1である。
EA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、
で表されるオキシド−ニトリド−シリケートであり、少なくとも1の元素EAは、Mg、Ca、Sr、BaおよびZnからなる群から選択され、少なくとも1の元素Bは、Al、GaおよびInからなる群から選択され、前記オキシド−ニトリド−シリケートは、セリウム、ユーロピウム、テルビウムおよびそれらの混合物からなる群から選択されるランタノイドで活性化されることを特徴とする、蛍光物質に関する。
Slieper、W. Milius、W. Schnick、Z. Anorg、Allg. Chem. 621巻、1380、1995年)。微小な位置および強度のずれは、2価の金属イオンの置換、およびストロンチウムのユーロピウムへの置換、珪素のアルミニウムへの置換、窒素と酸素への置換によるものである。
+ j +k =1である。従って窒化物半導体材料は、InGaNおよびGaNのような材料を含むが、例えば発光の強度向上および色調整のため各種不純物でドープされても良い。
放射源によって発光される光の一部を吸収して、吸収した光とは異なる波長の光を放射することのできる蛍光物質であって、当該蛍光物質は、一般式が、
EA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、
で表されるオキシド−ニトリド−シリケートであり、少なくとも1の元素EAは、Mg、Ca、Sr、BaおよびZnからなる群から選択され、少なくとも1の元素Bは、Al、GaおよびInからなる群から選択され、前記オキシド−ニトリド−シリケートは、セリウム、ユーロピウム、テルビウムおよびそれらの混合物からなる群から選択されるランタノイドで活性化されることを特徴とする蛍光物質を用いることは特に有意である。蛍光物質は、ストークスシフトで生じる熱および高吸収による高温感度が低く、結果的に小さな光侵入深さとなるからである。
Claims (12)
- 放射源と、少なくとも1の蛍光物質を有する発光体とを有する照明システムであって、前記少なくとも1の蛍光物質は、前記放射源によって発光される光の一部を吸収して、吸収した光とは異なる波長の光を放射することができ、
前記少なくとも1の蛍光物質は、一般式が、
EA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、
で表されるオキシド−ニトリド−シリケートであり、少なくとも1の元素EAは、Mg、Ca、Sr、BaおよびZnからなる群から選択され、少なくとも1の元素Bは、Al、GaおよびInからなる群から選択され、前記オキシド−ニトリド−シリケートは、セリウム、ユーロピウム、テルビウム、プラセオジミウムおよびそれらの混合物からなる群から選択されるランタノイドで活性化されることを特徴とする照明システム。 - 前記発光体は、一般式がEA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、で表される赤の蛍光物質と、緑または黄色の蛍光物質とを有することを特徴とする請求項1に記載の照明システム。
- 緑または黄色の蛍光物質は、
MS:Eu、Ce、Cuで表され、群M=Mg、Ca、SrおよびZnから選択される少なくとも1の元素を有する、MS:Eu、Ce、Cu;
MN2S4:Eu、Ceで表され、群M=Mg、Ca、SrおよびZnから選択される少なくとも1の元素と、群N=Al、Ga、In、Y、LaおよびGdから選択される少なくとも1の元素とを有する、MN2S4:Eu、Ce;
(Re1-rSmr)3(Al1-sGas)5O12:Ce、ただし0≦r<1および0≦s≦1、で表され、ReはY、Lu、Sc、LaおよびGdから選択される、(Re1-rSmr)3(Al1-sGas)5O12:Ce;および
(Ba1-x-y-zSrxCay)2SiO4:Euz、ただし0≦x≦1、0≦y≦1および0<z<1;
の群から選択されることを特徴とする請求項1に記載の照明システム。 - 前記放射源は、UVまたは青色発光LEDであることを特徴とする請求項1に記載の照明システム。
- 前記放射源は、一般式IniGajAlkN、ただし0≦i≦1、0≦j≦1、0≦k≦1およびi+j+k=1、で表される窒素化合物半導体を有することを特徴とする請求項1に記載の照明システム。
- 当該システムはランプであることを特徴とする請求項1に記載の照明システム。
- 当該システムは道路標識であることを特徴とする請求項1に記載の照明システム。
- 放射源によって発光される光の一部を吸収して、吸収した光とは異なる波長の光を放射することのできる蛍光物質であって、当該蛍光物質は、一般式が、
EA2-zSi5-aBaN8-aOa:Lnz;ただし0<z≦1および0<a<5、
で表されるオキシド−ニトリド−シリケートであり、少なくとも1の元素EAは、Mg、Ca、Sr、BaおよびZnからなる群から選択され、少なくとも1の元素Bは、Al、GaおよびInからなる群から選択され、前記オキシド−ニトリド−シリケートは、セリウム、ユーロピウム、テルビウムおよびそれらの混合物からなる群から選択されるランタノイドで活性化されることを特徴とする蛍光物質。 - 一般式が、(Sr1-xEAx)2-zSi5-a(Al1-bBb)aN8-aOa:(Eu、Ce)z、ただし0≦x≦1および0≦b≦1、であることを特徴とする請求項8に記載の蛍光物質。
- 一般式が、(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:(Eu、Ce)z、ただし0≦y≦1、であることを特徴とする請求項8に記載の蛍光物質。
- 一般式が、Sr1.96Si3Al2N6O2:Eu0.04であることを特徴とする求項8に記載の蛍光物質。
- 珪素がゲルマニウムと置換された請求項8に記載の蛍光物質。
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- 2003-12-04 JP JP2004560043A patent/JP4418758B2/ja not_active Expired - Lifetime
- 2003-12-04 AU AU2003283731A patent/AU2003283731A1/en not_active Abandoned
- 2003-12-04 WO PCT/IB2003/005727 patent/WO2004055910A1/en active IP Right Grant
- 2003-12-04 DE DE60312733T patent/DE60312733T2/de not_active Expired - Lifetime
- 2003-12-04 EP EP03775711A patent/EP1573826B1/en not_active Expired - Lifetime
- 2003-12-04 US US10/538,203 patent/US7544309B2/en active Active
- 2003-12-04 AT AT03775711T patent/ATE357746T1/de not_active IP Right Cessation
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4548549B1 (ja) * | 2005-04-01 | 2010-09-22 | 三菱化学株式会社 | 蛍光体の製造方法 |
JP2010222587A (ja) * | 2005-04-01 | 2010-10-07 | Mitsubishi Chemicals Corp | 蛍光体の製造方法 |
JP2006307090A (ja) * | 2005-04-28 | 2006-11-09 | Dowa Mining Co Ltd | 蛍光体およびその製造方法、並びに当該蛍光体を用いた発光装置 |
JP2014123756A (ja) * | 2005-09-30 | 2014-07-03 | Seoul Semiconductor Co Ltd | 発光素子 |
US9287241B2 (en) | 2005-09-30 | 2016-03-15 | Seoul Semiconductor Co., Ltd. | Light emitting device and LCD backlight using the same |
US9576940B2 (en) | 2005-09-30 | 2017-02-21 | Seoul Semiconductor Co., Ltd. | Light emitting device and LCD backlight using the same |
JP2008285608A (ja) * | 2007-05-18 | 2008-11-27 | Nec Lighting Ltd | 蛍光体、その製造方法及び発光装置 |
JP2013046046A (ja) * | 2011-08-26 | 2013-03-04 | Mitsubishi Chemicals Corp | 発光装置 |
CN103045257A (zh) * | 2011-10-17 | 2013-04-17 | 北京有色金属研究总院 | 一种氮化物发光材料及采用该发光材料制成的发光器件 |
CN103045257B (zh) * | 2011-10-17 | 2015-09-23 | 有研稀土新材料股份有限公司 | 一种氮化物发光材料及采用该发光材料制成的发光器件 |
JP2014028971A (ja) * | 2013-10-09 | 2014-02-13 | Nec Lighting Ltd | 蛍光体 |
Also Published As
Publication number | Publication date |
---|---|
EP1573826A1 (en) | 2005-09-14 |
EP1573826B1 (en) | 2007-03-21 |
US7544309B2 (en) | 2009-06-09 |
ATE357746T1 (de) | 2007-04-15 |
WO2004055910A1 (en) | 2004-07-01 |
DE60312733T2 (de) | 2007-12-06 |
US20060022146A1 (en) | 2006-02-02 |
JP4418758B2 (ja) | 2010-02-24 |
DE60312733D1 (de) | 2007-05-03 |
AU2003283731A1 (en) | 2004-07-09 |
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