JP2006278766A - Mount structure and mount method of light-emitting element - Google Patents

Mount structure and mount method of light-emitting element Download PDF

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JP2006278766A
JP2006278766A JP2005096167A JP2005096167A JP2006278766A JP 2006278766 A JP2006278766 A JP 2006278766A JP 2005096167 A JP2005096167 A JP 2005096167A JP 2005096167 A JP2005096167 A JP 2005096167A JP 2006278766 A JP2006278766 A JP 2006278766A
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emitting element
light emitting
electrode
light
mounting structure
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Minehiro Imamura
峰宏 今村
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mount structure and a mount method of light-emitting element, whereby the utilizing the efficiency of light from the light-emitting element and the radiation efficiency of the light-emitting element can be improved. <P>SOLUTION: An insulation layer 18 with a slope (upper side 18a) is formed from the end of a pad 16, formed on an upper side of an LED 15 to an end of an electrode 12, formed on a wiring board 10. Then a wiring layer 20 made of silver is formed on the upper side 18a. The wiring layer 20 is formed as a face (film shape), by uniformly coating silver paste over the upper side 18a as a whole. Thus, the electrode section 12 and the pad 16 are electrically connected via the wiring layer 20, and the LED 15 is mounted on the wiring board 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子の実装構造及び実装方法に関する。   The present invention relates to a light emitting element mounting structure and a mounting method.

従来、発光素子としてのＬＥＤを基板に実装する際には、ワイヤボンディング工程を用いて、ＬＥＤを基板に実装する方法が用いられている（特許文献１）。詳しくは、接続部材としてのワイヤを使用して、ＬＥＤと基板とが電気的に接続されるのと同時にＬＥＤが基板に実装される。
特開平１１−３４０５１５ Conventionally, when an LED as a light emitting element is mounted on a substrate, a method of mounting the LED on the substrate using a wire bonding process has been used (Patent Document 1). Specifically, the LED is mounted on the substrate at the same time as the LED and the substrate are electrically connected using a wire as a connecting member.
JP 11-340515 A

ところで、近年のＬＥＤの高輝度化に伴い、必要とされる電流量が大幅に上昇している。この場合、上記のようなワイヤボンディング工程によるＬＥＤの実装方法では、多数のワイヤボンディングが必要となる。その結果、ＬＥＤから出射する光がワイヤにあたることで、その光を阻害し、光の利用効果が低下してしまう問題が生じる。また、電流量の上昇に伴い、ＬＥＤの発熱量も増大するため、放熱性を向上させる必要も生じる。   By the way, with the recent increase in brightness of LEDs, the amount of current required has increased significantly. In this case, the LED mounting method using the wire bonding process as described above requires a large number of wire bondings. As a result, when the light emitted from the LED hits the wire, there is a problem that the light is inhibited and the light utilization effect is reduced. Further, as the amount of current increases, the amount of heat generated by the LED also increases, so that it is necessary to improve heat dissipation.

本発明は、上記問題を解消するためになされたものであり、その目的は、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることのできる発光素子の実装構造及び実装方法を提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a light emitting element mounting structure and a mounting method capable of improving the light use efficiency from the light emitting element and the heat dissipation efficiency of the light emitting element. Is to provide.

本発明の発光素子の実装構造は、配線基板上に実装される発光素子の第１の電極を前記配線基板に形成した第２の電極に電気的に接続するようにした発光素子の実装構造において、前記第１の電極と前記第２の電極とは、面状の導電性部材を介して電気的に接続されている。   The light emitting element mounting structure of the present invention is a light emitting element mounting structure in which a first electrode of a light emitting element mounted on a wiring board is electrically connected to a second electrode formed on the wiring board. The first electrode and the second electrode are electrically connected via a planar conductive member.

本発明の発光素子の実装構造によれば、第１の電極と第２の電極とを電気的に接続する導電性部材は、面状の形状をなしている。これにより、第１の電極の端部に導電性部材を接合することができる。即ち、ワイヤボンディングによる接合と比較して、低い高さ位置において、導電性部材と第１の電極との接合をすることができる。従って、導電性部材が発光素子からの光の射光を阻害するのを抑制できるため、発光素子からの光の利用効率の向上を図ることができる。さらに、導電性部材の表面積は、形状がワイヤ状である場合と比較して大きくなるため、導電性部材からの熱放散を大きくすることができる。従って、発光素子の放熱効率の向上も図ることができる。   According to the mounting structure of the light emitting element of the present invention, the conductive member that electrically connects the first electrode and the second electrode has a planar shape. Thereby, an electroconductive member can be joined to the edge part of a 1st electrode. That is, it is possible to join the conductive member and the first electrode at a low height position as compared with the joining by wire bonding. Therefore, since it can suppress that a conductive member inhibits the light emission from a light emitting element, the utilization efficiency of the light from a light emitting element can be improved. Furthermore, since the surface area of the conductive member is larger than when the shape is a wire shape, the heat dissipation from the conductive member can be increased. Accordingly, the heat dissipation efficiency of the light emitting element can be improved.

この発光素子の実装構造は、前記第２の電極と前記発光素子の前記第１の電極との間に、絶縁層を前記配線基板上に形成し、前記絶縁層上に前記面状の導電性部材が形成されている。   In this light emitting element mounting structure, an insulating layer is formed on the wiring substrate between the second electrode and the first electrode of the light emitting element, and the planar conductive material is formed on the insulating layer. A member is formed.

この発光素子の実装構造によれば、第２の電極と第１の電極との間に絶縁層を形成し、その上面に導電性部材を形成させている。これにより、面状の導電性部材を容易に形成することができる。即ち、効率よく発光素子を配線基板に実装することができる上に、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることができる。   According to this light emitting element mounting structure, the insulating layer is formed between the second electrode and the first electrode, and the conductive member is formed on the upper surface thereof. Thereby, a planar conductive member can be easily formed. That is, the light-emitting element can be efficiently mounted on the wiring board, and the light use efficiency from the light-emitting element and the heat dissipation efficiency of the light-emitting element can be improved.

この発光素子の実装構造は、前記面状の導電性部材は、リボンワイヤである。この発光
素子の実装構造によれば、導電性部材はリボンワイヤであるため、ワイヤボンディングと比較して、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることができる。 In the light emitting element mounting structure, the planar conductive member is a ribbon wire. According to the light emitting element mounting structure, since the conductive member is a ribbon wire, it is possible to improve the utilization efficiency of light from the light emitting element and the heat dissipation efficiency of the light emitting element as compared with wire bonding.

この発光素子の実装構造は、前記面状の導電性部材は、金属により形成されている。この発光素子の実装構造によれば、導電性部材が金属によって形成されていることから、高い熱伝導性を有した導電性部材を形成することができる。即ち、導電性部材からの熱放散を大きくすることができる。従って、より一層、発光素子の放熱効率の向上を図ることができる。   In the mounting structure of the light emitting element, the planar conductive member is made of metal. According to the mounting structure of the light emitting element, since the conductive member is made of metal, a conductive member having high thermal conductivity can be formed. That is, heat dissipation from the conductive member can be increased. Therefore, the heat dissipation efficiency of the light emitting element can be further improved.

この発光素子の実装構造は、前記面状の導電性部材は、樹脂により形成されている。この発光素子の実装構造によれば、導電性部材は樹脂により形成されているので、柔軟性のある導電性部材を形成することができる。即ち、容易に導電性部材を形成できる上に、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることができる。   In the light emitting element mounting structure, the planar conductive member is formed of resin. According to the mounting structure of the light emitting element, since the conductive member is made of resin, a flexible conductive member can be formed. That is, it is possible to easily form a conductive member, and it is possible to improve utilization efficiency of light from the light emitting element and heat radiation efficiency of the light emitting element.

この発光素子の実装構造は、前記面状の導電性部材は、絶縁性樹脂によって封止されている。この発光素子の実装構造によれば、導電性部材が絶縁性樹脂によって封止されているため、電極と配線基板との電気的接続の信頼性向上が図られる上に、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることができる。   In the light emitting element mounting structure, the planar conductive member is sealed with an insulating resin. According to the mounting structure of the light emitting element, since the conductive member is sealed with the insulating resin, the reliability of the electrical connection between the electrode and the wiring board can be improved, and the light from the light emitting element can be improved. The utilization efficiency and the heat dissipation efficiency of the light emitting element can be improved.

この発光素子の実装方法は、配線基板上に実装される発光素子の第１の電極を配線基板に形成した第２の電極に電気的に接続するようにした発光素子の実装方法において、前記第２の電極と前記発光素子の前記第１の電極との間に、絶縁層を前記配線基板上に形成した後、前記絶縁層の上面に導電性材料を塗布して面状の前記導電性部材を形成する。   The light emitting element mounting method is the light emitting element mounting method in which the first electrode of the light emitting element mounted on the wiring board is electrically connected to the second electrode formed on the wiring board. An insulating layer is formed on the wiring board between the two electrodes and the first electrode of the light emitting element, and then a conductive material is applied to the upper surface of the insulating layer to form the planar conductive member. Form.

この発光素子の実装方法によれば、第２の電極と第１の電極との間に絶縁層を形成して、その上面に導電性部材を形成させる。これにより、面状の導電性部材を容易に形成することができる。即ち、効率よく発光素子を配線基板に実装することができる上に、発光素子からの光の利用効率及び発光素子の放熱効率の向上を図ることができる。   According to this light emitting element mounting method, the insulating layer is formed between the second electrode and the first electrode, and the conductive member is formed on the upper surface thereof. Thereby, a planar conductive member can be easily formed. That is, the light-emitting element can be efficiently mounted on the wiring board, and the light use efficiency from the light-emitting element and the heat dissipation efficiency of the light-emitting element can be improved.

以下、発明を具体化した一実施形態を図１〜図４に従って説明する。
図１（ａ）は、本実施形態に係る発光素子の実装構造を示した要部平面図であり、図１（ｂ）は、図１（ａ）におけるＡ−Ａ線断面図である。 Hereinafter, an embodiment embodying the present invention will be described with reference to FIGS.
Fig.1 (a) is the principal part top view which showed the mounting structure of the light emitting element concerning this embodiment, FIG.1 (b) is the sectional view on the AA line in Fig.1 (a).

図１（ａ）及び（ｂ）に示すように、発光素子の実装構造は、配線基板１０上に電極部１１と第２の電極としての電極部１２を有している。また、配線基板１０には、図示しない配線部が形成されており、電極部１１と電極部１２は、それぞれに対応する該配線部と導通されている。   As shown in FIGS. 1A and 1B, the light emitting element mounting structure includes an electrode part 11 and an electrode part 12 as a second electrode on a wiring board 10. In addition, a wiring portion (not shown) is formed on the wiring substrate 10, and the electrode portion 11 and the electrode portion 12 are electrically connected to the corresponding wiring portion.

電極部１１の上面には、発光素子としての発光ダイオード（以下、ＬＥＤという）１５が、デバイスを形成する発光面を上面にして、接着層１３を介して立設されている。本実施形態では、接着層１３は導電性樹脂から形成されており、該接着層１３を介すことによってＬＥＤ１５と電極部１１は電気的に接続される。また、ＬＥＤ１５の上面１５ａの左側端部には、第１の電極としてのパッド１６が形成されている。パッド１６は、上記デバイスと導通する電極取出部として構成されており、長辺が電極部１２と略同じ幅Ｒで長方形状に形成されている。   On the upper surface of the electrode part 11, a light emitting diode (hereinafter referred to as LED) 15 as a light emitting element is erected via an adhesive layer 13 with a light emitting surface forming a device as an upper surface. In this embodiment, the adhesive layer 13 is formed of a conductive resin, and the LED 15 and the electrode unit 11 are electrically connected through the adhesive layer 13. A pad 16 as a first electrode is formed on the left end of the upper surface 15a of the LED 15. The pad 16 is configured as an electrode extraction portion that is electrically connected to the device, and has a long side formed in a rectangular shape with a width R substantially the same as that of the electrode portion 12.

そして、図１（ｂ）に示すように、ＬＥＤ１５の左側面１５ｂ側であってＬＥＤ１５と電極部１２の間には、絶縁層１８が形成されている。絶縁層１８は、ＬＥＤ１５の上面１
５ａが電極部１２の上面より高い位置にあるため、ＬＥＤ１５の上面１５ａ左端位置から電極部１２の上面右端位置まで連続するように、その上面１８ａを傾斜面にしている。絶縁層１８は、絶縁樹脂、例えばエポキシ樹脂等によって形成されている。絶縁層１８の上面１８ａには導電性部材としての配線層２０が形成されている。配線層２０は、本実施形態では銀によって形成されている。そして、電極部１２とパッド１６とはこの配線層２０を介して電気的に接続される。 As shown in FIG. 1B, an insulating layer 18 is formed between the LED 15 and the electrode portion 12 on the left side 15 b side of the LED 15. The insulating layer 18 is the top surface 1 of the LED 15.
Since 5a is located higher than the upper surface of the electrode part 12, the upper surface 18a is inclined so that it continues from the left end position of the upper surface 15a of the LED 15 to the right end position of the upper surface of the electrode part 12. The insulating layer 18 is formed of an insulating resin such as an epoxy resin. A wiring layer 20 as a conductive member is formed on the upper surface 18 a of the insulating layer 18. The wiring layer 20 is made of silver in this embodiment. The electrode unit 12 and the pad 16 are electrically connected through the wiring layer 20.

そして、配線層２０を含む電極部１２からＬＥＤ１５の上面全体を覆うように、絶縁性かつ光透過性の樹脂によって保護膜２５が配線基板１０上に形成されている。以上により、ＬＥＤ１５は、配線基板１０に実装されている。   A protective film 25 is formed on the wiring substrate 10 with an insulating and light-transmitting resin so as to cover the entire upper surface of the LED 15 from the electrode portion 12 including the wiring layer 20. As described above, the LED 15 is mounted on the wiring board 10.

次に、このＬＥＤ１５の配線基板１０に対する実装方法について、図２〜図４に従って説明する。図２は配線基板１０の要部平面図であり、図３及び図４は、本発明のＬＥＤ１５の実装方法を順を追って示す断面図、即ち、図２におけるＢ−Ｂ線断面図である。   Next, a method of mounting the LED 15 on the wiring board 10 will be described with reference to FIGS. FIG. 2 is a plan view of a principal part of the wiring board 10, and FIGS. 3 and 4 are cross-sectional views sequentially showing the mounting method of the LED 15 of the present invention, that is, a cross-sectional view taken along the line BB in FIG.

先ず、図２に示すように、配線基板１０上には、２点鎖線で示すように、ＬＥＤ１５を実装するための領域Ｃが設けられている。そして、図３（ａ）に示すように、配線基板１０上の所定の位置に電極部１１及び電極部１２をそれぞれ配線基板に形成された図示しない配線部と導通するように形成する。詳しくは、電極部１１は、領域Ｃの内側に少なくともその一部が形成されるように板状に形成される。一方、電極部１２は、領域Ｃの外側であって配線基板１０の左側領域に、長辺が領域Ｃに実装されるＬＥＤ１５のパッド１６と略同じ幅Ｒで長方形状に配置形成される。本実施形態では、電極部１１及び電極部１２の材料としてアルミニウムを使用している。   First, as shown in FIG. 2, a region C for mounting the LED 15 is provided on the wiring board 10 as indicated by a two-dot chain line. Then, as shown in FIG. 3A, the electrode part 11 and the electrode part 12 are formed at predetermined positions on the wiring board 10 so as to be electrically connected to wiring parts (not shown) formed on the wiring board. Specifically, the electrode portion 11 is formed in a plate shape so that at least a part thereof is formed inside the region C. On the other hand, the electrode portion 12 is arranged and formed in a rectangular shape outside the region C and in the left region of the wiring substrate 10 with a long side having substantially the same width R as the pad 16 of the LED 15 mounted in the region C. In this embodiment, aluminum is used as the material of the electrode part 11 and the electrode part 12.

さらに、図３（ｂ）に示すように、領域Ｃ（電極部１１）の上面には、ＬＥＤ１５を接着固定させるための導電性樹脂からなる接着剤１４が塗布される。そして、配線基板１０上に形成された領域ＣとＬＥＤ１５との位置合わせを行う。即ち、平面配置から見て、ＬＥＤ１５の上面１５ａに形成されたパッド１６が配線基板１０の左側（電極部１２側）となるように、ＬＥＤ１５を配線基板１０上の領域Ｃに接着させる（図３（ｃ）参照）。   Further, as shown in FIG. 3B, an adhesive 14 made of a conductive resin for bonding and fixing the LED 15 is applied to the upper surface of the region C (electrode part 11). Then, alignment between the region C formed on the wiring board 10 and the LED 15 is performed. That is, the LED 15 is bonded to the region C on the wiring board 10 so that the pad 16 formed on the upper surface 15a of the LED 15 is on the left side (electrode part 12 side) of the wiring board 10 when viewed from the plane (FIG. 3). (See (c)).

次に、図４（ａ）に示すように、図示しない液滴吐出装置を使って、その吐出ノズルから、絶縁性樹脂を吐出して絶縁層１８を形成させる。本実施形態では、絶縁性樹脂の吐出量を調節することにより、パッド１６の端部から電極部１２の端部まで斜面部（上面１８ａ）を有する絶縁層１８を形成させる。   Next, as shown in FIG. 4A, the insulating layer 18 is formed by discharging an insulating resin from the discharge nozzle using a droplet discharge device (not shown). In this embodiment, the insulating layer 18 having an inclined surface (upper surface 18a) from the end of the pad 16 to the end of the electrode unit 12 is formed by adjusting the discharge amount of the insulating resin.

そして、図４（ｂ）に示すように、図示しない液滴吐出装置を使って、その吐出ノズルから、絶縁層１８の上面１８ａ上に導電性材料としての銀ペーストを吐出し、導電性部材としての配線層２０を形成させる。この時、配線層２０は、上面１８ａの面全体に銀ペーストを均一に吐出させて形成させることから、面状（フィルム状）の形状をなしている。これにより、配線層２０を介して、電極部１２とパッド１６とは電気的に接続される。   Then, as shown in FIG. 4B, using a droplet discharge device (not shown), a silver paste as a conductive material is discharged from the discharge nozzle onto the upper surface 18a of the insulating layer 18 to form a conductive member. The wiring layer 20 is formed. At this time, since the wiring layer 20 is formed by uniformly discharging the silver paste over the entire surface of the upper surface 18a, the wiring layer 20 has a planar shape (film shape). Thereby, the electrode part 12 and the pad 16 are electrically connected through the wiring layer 20.

さらに、図示しない液滴吐出装置を使用して、配線層２０を含む電極部１２からＬＥＤ１５の上面全体を覆うように、保護膜２５を配線基板１０上に形成させる。本実施形態では、保護膜２５は、絶縁性かつ光透過性にある樹脂としてのポリイミド樹脂によって形成されている。これにより、ＬＥＤ１５からの光の利用効率及び放熱効率の向上を図ることのできるＬＥＤ１５の実装構造が形成される。   Further, a protective film 25 is formed on the wiring substrate 10 so as to cover the entire upper surface of the LED 15 from the electrode unit 12 including the wiring layer 20 using a droplet discharge device (not shown). In the present embodiment, the protective film 25 is formed of a polyimide resin as an insulating and light transmissive resin. Thereby, the mounting structure of LED15 which can aim at the utilization efficiency of the light from LED15, and the heat dissipation efficiency is formed.

上記実施形態によれば、以下のような効果を得ることができる。
（１）本実施形態によれば、配線層２０は面状（フィルム状）に形成されている。これにより、配線層２０の端部は、ＬＥＤ１５の上面１５ａに形成されたパッド１６の端部と
接合することができる。即ち、ワイヤボンディングによるパッド１６への接合と比較して、低い高さ位置でパッド１６との接合をすることができる。従って、ＬＥＤ１５から出射する光を配線層２０が阻害するのを抑制できるため、ＬＥＤ１５からの光の利用効率の向上を図ることができる。さらに、配線層２０の形状が面状であることから、表面積が大きくなり、同時に配線層２０からの熱放散も大きくすることができる。従って、ＬＥＤ１５の放熱効率の向上も図ることができる。 According to the above embodiment, the following effects can be obtained.
(1) According to this embodiment, the wiring layer 20 is formed in a planar shape (film shape). Thereby, the edge part of the wiring layer 20 can be joined with the edge part of the pad 16 formed in the upper surface 15a of LED15. That is, the bonding with the pad 16 can be performed at a lower height position as compared with the bonding with the pad 16 by wire bonding. Therefore, since it can suppress that the wiring layer 20 inhibits the light radiate | emitted from LED15, the utilization efficiency of the light from LED15 can be aimed at. Furthermore, since the shape of the wiring layer 20 is planar, the surface area is increased, and at the same time, heat dissipation from the wiring layer 20 can be increased. Therefore, the heat dissipation efficiency of the LED 15 can be improved.

（２）本実施形態によれば、電極部１２の端部からパッド１６の端部まで絶縁層１８を形成させ、該絶縁層１８の上面１８ａ上に配線層２０を形成した。これにより、上面１８ａを用いて配線層２０を容易に形成させることができる。従って、効率よくＬＥＤ１５を配線基板１０に実装することができる。   (2) According to this embodiment, the insulating layer 18 is formed from the end of the electrode portion 12 to the end of the pad 16, and the wiring layer 20 is formed on the upper surface 18 a of the insulating layer 18. Thereby, the wiring layer 20 can be easily formed using the upper surface 18a. Therefore, the LED 15 can be efficiently mounted on the wiring board 10.

（３）本実施形態によれば、配線層２０は銀により形成されている。これによれば、配線層２０が銀によって形成されているので、高い熱伝導性を有した配線層２０を形成することができる。即ち、配線層２０からの熱放散を大きくすることができるため、より一層、ＬＥＤ１５の放熱効率の向上を図ることができる。   (3) According to this embodiment, the wiring layer 20 is formed of silver. According to this, since the wiring layer 20 is made of silver, the wiring layer 20 having high thermal conductivity can be formed. That is, since the heat dissipation from the wiring layer 20 can be increased, the heat dissipation efficiency of the LED 15 can be further improved.

（４）本実施形態によれば、配線層２０を含む電極部１２からＬＥＤ１５の上面全体を覆うように、絶縁性のある樹脂により保護膜２５を形成させた。これによれば、配線層２０は絶縁性かつ光透過性のある樹脂により封止されているので、電極部１２とパッド１６との電気的接続の信頼性の向上を図ることができる。   (4) According to this embodiment, the protective film 25 is formed of an insulating resin so as to cover the entire upper surface of the LED 15 from the electrode portion 12 including the wiring layer 20. According to this, since the wiring layer 20 is sealed with an insulating and light-transmitting resin, the reliability of the electrical connection between the electrode portion 12 and the pad 16 can be improved.

なお、本実施形態は以下のように変更してもよい。
○上記実施形態では、配線層２０を絶縁層１８の上面１８ａを使って形成することにより、面状の形状に形成させた。これに代えて、配線層２０はリボンワイヤを使用してもよい。これにより、前述した面状の配線層２０と同様な効果を得ることができる。 In addition, you may change this embodiment as follows.
In the above embodiment, the wiring layer 20 is formed using the upper surface 18a of the insulating layer 18 to form a planar shape. Instead of this, the wiring layer 20 may use a ribbon wire. Thereby, the same effect as the planar wiring layer 20 described above can be obtained.

○上記実施形態では、配線層２０の厚さを限定しなかったが、例えば１μｍ程度に形成してもよい。
○上記実施形態では、銀を使用して配線層２０を形成した。これに代えて、金属は特に限定するものでではなく、例えば、金やアルミニウムであってもよい。 In the above embodiment, the thickness of the wiring layer 20 is not limited, but may be formed to about 1 μm, for example.
In the above embodiment, the wiring layer 20 is formed using silver. Instead of this, the metal is not particularly limited, and may be gold or aluminum, for example.

○上記実施形態では、配線層２０に金属（銀）を使用して形成した。これに代えて、樹脂によって配線層２０を形成してもよい。例えば、カーボンを樹脂に添加して導電性樹脂とすることにより、配線層２０を形成させてもよい。これにより、柔軟性のある配線層２０を容易に形成することができる。   In the above embodiment, the wiring layer 20 is formed using metal (silver). Instead of this, the wiring layer 20 may be formed of resin. For example, the wiring layer 20 may be formed by adding carbon to a resin to form a conductive resin. Thereby, the flexible wiring layer 20 can be formed easily.

○上記実施形態では、電極部１１及び電極部１２の材料としてアルミニウムを使用した。これに代えて、材料は特に限定するものではなく、例えば、銅、チタン、ニッケル、金等を使用してもよい。   In the above embodiment, aluminum is used as the material for the electrode part 11 and the electrode part 12. Instead of this, the material is not particularly limited, and for example, copper, titanium, nickel, gold or the like may be used.

○上記実施形態では、保護膜２５にはポリイミド樹脂を使用した。これに代えて、アクリル樹脂やエポキシ樹脂等の絶縁性樹脂を使用してもよい。   In the above embodiment, polyimide resin is used for the protective film 25. Instead of this, an insulating resin such as an acrylic resin or an epoxy resin may be used.

（ａ）は、本実施形態に係る発光素子の実装構造を示した要部平面図。（ｂ）は、（ａ）におけるＡ−Ａ線断面図。(A) is a principal part top view which showed the mounting structure of the light emitting element which concerns on this embodiment. (B) is the sectional view on the AA line in (a). 本実施形態に係る配線基板の要部平面図。The principal part top view of the wiring board which concerns on this embodiment. （ａ）〜（ｃ）は本発明の発光素子の実装方法を説明するための第１説明図。(A)-(c) is 1st explanatory drawing for demonstrating the mounting method of the light emitting element of this invention. （ａ）〜（ｃ）は本発明の発光素子の実装方法を説明するための第２説明図。(A)-(c) is 2nd explanatory drawing for demonstrating the mounting method of the light emitting element of this invention.

符号の説明Explanation of symbols

１０…配線基板、１１…電極部、１２…第２の電極としての電極部、１３…接着層、１４…接着剤、１５…発光素子としての発光ダイオード、１６…第１の電極としてのパッド、１８…絶縁層、１８ａ…上面、２０…導電性部材としての配線層、２５…保護膜。 DESCRIPTION OF SYMBOLS 10 ... Wiring board, 11 ... Electrode part, 12 ... Electrode part as 2nd electrode, 13 ... Adhesive layer, 14 ... Adhesive, 15 ... Light emitting diode as light emitting element, 16 ... Pad as 1st electrode, DESCRIPTION OF SYMBOLS 18 ... Insulating layer, 18a ... Upper surface, 20 ... Wiring layer as a conductive member, 25 ... Protective film.

Claims (7)

配線基板上に実装される発光素子の第１の電極を前記配線基板に形成した第２の電極に電気的に接続するようにした発光素子の実装構造において、
前記第１の電極と前記第２の電極とは、面状の導電性部材を介して電気的に接続されていることを特徴とする発光素子の実装構造。 In the light emitting element mounting structure in which the first electrode of the light emitting element mounted on the wiring board is electrically connected to the second electrode formed on the wiring board.
The light emitting element mounting structure, wherein the first electrode and the second electrode are electrically connected via a planar conductive member. 請求項１に記載の発光素子の実装構造において、
前記第２の電極と前記発光素子の前記第１の電極との間に、絶縁層を前記配線基板上に形成し、前記絶縁層上に前記面状の導電性部材が形成されていることを特徴とする発光素子の実装構造。 In the mounting structure of the light emitting device according to claim 1,
An insulating layer is formed on the wiring substrate between the second electrode and the first electrode of the light emitting element, and the planar conductive member is formed on the insulating layer. The mounting structure of the light emitting element characterized. 請求項１に記載の発光素子の実装構造において、
前記面状の導電性部材は、リボンワイヤであることを特徴とする発光素子の実装構造。 In the mounting structure of the light emitting device according to claim 1,
The light emitting element mounting structure, wherein the planar conductive member is a ribbon wire. 請求項１〜３のいずれか１つに記載の発光素子の実装構造において、
前記面状の導電性部材は、金属により形成されていることを特徴とする発光素子の実装構造。 In the mounting structure of the light emitting element according to any one of claims 1 to 3,
The light emitting element mounting structure, wherein the planar conductive member is made of metal. 請求項１〜４のいずれか1つに記載の発光素子の実装構造において、
前記面状の導電性部材は、樹脂により形成されていることを特徴とする発光素子の実装構造。 In the mounting structure of the light emitting element according to any one of claims 1 to 4,
The light emitting element mounting structure, wherein the planar conductive member is made of resin. 請求項１〜５のいずれか1つに記載の発光素子の実装構造において、
前記面状の導電性部材は、絶縁性樹脂によって封止されていることを特徴とする発光素子の実装構造。 In the mounting structure of the light emitting element according to any one of claims 1 to 5,
The mounting structure of a light emitting element, wherein the planar conductive member is sealed with an insulating resin. 配線基板上に実装される発光素子の第１の電極を配線基板に形成した第２の電極に電気的に接続するようにした発光素子の実装方法において、
前記第２の電極と前記発光素子の前記第１の電極との間に、絶縁層を前記配線基板上に形成した後、前記絶縁層の上面に導電性材料を塗布して面状の導電性部材を形成することを特徴とする発光素子の実装方法。 In the method for mounting a light emitting element, the first electrode of the light emitting element mounted on the wiring board is electrically connected to the second electrode formed on the wiring board.
An insulating layer is formed on the wiring substrate between the second electrode and the first electrode of the light emitting element, and then a conductive material is applied to the upper surface of the insulating layer to form a planar conductive material. A method for mounting a light emitting element, comprising forming a member.
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