JP2006261529A - Underfill tape for flip chip mount and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an underfill tape for flip chip mounting which adheres to a semiconductor wafer with bumps without exerting a high tension to the semiconductor wafer at room temperature and forms underfill without void, and also to provide a manufacturing method of a semiconductor device utilizing the underfill tape. <P>SOLUTION: The underfill tape for flip chip mount comprises a base, and a viscoadhesive layer formed thereon in an exfoliable way. The tape is used for the manufacturing method of the semiconductor device including a process wherein at the same time when the viscoadhesive layer adheres to a circuit face with the bumps of a semiconductor wafer, the bumps are penetrated through the viscoadhesive layer, and the bump tops are penetrated into the base. A ratio (H<SB>B</SB>/T<SB>A</SB>) of an average height (H<SB>B</SB>) of the bumps to the thickness (T<SB>A</SB>) of the viscoadhesive layer is selected to be within a range of 1.0/0.3 to 1.0/0.95, and a ratio (T<SB>S</SB>/T<SB>A</SB>) of the thickness (T<SB>S</SB>) of the base to the thickness (T<SB>A</SB>) of the viscoadhesive layer is selected to be 0.5 or over. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an underfill tape for flip chip mounting and a method of manufacturing a semiconductor device using the tape.

  Conventionally, when a multi-pin LSI package used for an MPU, a gate array, or the like is mounted on a printed wiring board, a convex electrode (bump) made of eutectic solder, high-temperature solder, gold or the like is provided on a connection pad portion of a semiconductor chip. A flip chip mounting method has been adopted in which the bump electrodes are formed in a so-called face-down manner so that the bump electrodes face and come into contact with corresponding terminal portions on the chip mounting substrate, and are melted / diffusion bonded. However, when this method is used, the semiconductor chip connected face-down may be broken due to the difference in thermal expansion coefficient between the semiconductor chip and the chip mounting substrate when subjected to periodic temperature fluctuations. A liquid thermosetting resin (underfill material) is injected and cured in the gap between the entire surface where the bump electrodes are provided and the printed wiring board facing each other, and the entire bump joint is bonded to the chip mounting substrate. Thus, a method has been proposed in which thermal stress concentrated on the bump electrode is dispersed to prevent breakage. However, the gap between the semiconductor chip and the chip mounting substrate in flip chip mounting is as small as 40 to 200 μm, so that the process of impregnating the underfill material without voids takes a considerable amount of time, and the lot of underfill material There are problems such as complicated viscosity management.

  As a method for solving this problem, a technique in which a sheet-like thermosetting resin or thermoplastic resin is sandwiched between a semiconductor chip and a chip mounting substrate and thermocompression bonded is disclosed in, for example, JP-A-9-213741 and JP-A-10-242208. And JP-A-10-270497. However, the technique of Japanese Patent Laid-Open No. 9-213741 requires a step of providing a sealing portion so as to separately surround the bump portion with a sealing material, and the process becomes complicated and at the same time, the generation of voids can be completely avoided. There is a problem that you can not. Further, in the proposal of Japanese Patent Laid-Open No. 10-242208, it is necessary to align the underfill resin, and it is denied that the amount of the underfill resin may be excessive or insufficient depending on the location, or voids may be generated due to escape holes. Absent. Further, in JP-A-10-270497, a bump electrode of a semiconductor chip is bitten into an insulating adhesive film and connected to a terminal portion of a chip mounting substrate, so that an insulating adhesive film film remains on the tip of the bump electrode. There are problems in terms of process and reliability, such as the reliability of connection being impaired. In recent years, semiconductor chips have also been usually ground thinly due to increasing demands for thinning semiconductor packages. For that purpose, conventionally, a complicated process of pressing a back grind tape on the bump electrode surface of a wafer on which a circuit is formed, grinding the back surface of the wafer, peeling off the tape, and separating and joining by dicing. It is processed through. Further, there is a problem that the ground thin wafer is often damaged during transportation and handling.

In order to solve these problems, Patent Document 1 discloses a semiconductor chip mounting sheet in which a thermosetting resin layer having the same thickness as the bump height of a semiconductor chip to be mounted is provided on one surface of a synthetic resin film. Has been proposed. The semiconductor chip mounting sheet is bonded to the wafer by thermocompression bonding at a temperature not lower than the softening temperature of the thermosetting resin layer before curing and not higher than the curing temperature.
JP 2002-118147 A

By the way, in recent years, as the shape of the above-mentioned bump, a stud bump having a sharp tip is being adopted. When a semiconductor chip mounting sheet as in Patent Document 1 is subjected to thermocompression bonding under heating, thermocompression bonding is performed in a state where the thermosetting resin layer and the base material are softened. The thermosetting resin layer may be stretched and broken. When the thermosetting resin layer is torn off, voids are generated.

  The present invention relates to a flip-chip mounting underfill tape that can be applied to a semiconductor wafer having bumps without applying a large tension at room temperature and can form a void-free underfill, and a semiconductor device using the same It aims to provide a method.

The gist of the present invention for solving the above problems is as follows.
(1) It consists of a base material and an adhesive layer formed so as to be peelable thereon,
A semiconductor device comprising a step of attaching an adhesive layer to a circuit surface of a semiconductor wafer having bumps on a circuit surface, and simultaneously, the bump penetrates the adhesive layer and penetrates the top of the bump into a substrate. An underfill tape for flip chip mounting used in a manufacturing method,
The ratio (H _B / T _A ) between the average height (H _B ) of the bumps and the thickness (T _A ) of the adhesive layer is 1.0 / 0.3 to 1.0 / 0.95 The thickness of the base material (T _S ) and the thickness of the adhesive layer (
T _A) and the ratio (T _S / T _A) underfill tape for flip-chip mounting is 0.5 or more.
(2) Attach the adhesive layer of the flip chip mounting underfill tape described in (1) to the circuit surface of a semiconductor wafer having bumps on the circuit surface, and at the same time, the bumps penetrate the adhesive layer. And a step of penetrating the bump top portion into the base material,
Cutting and separating the semiconductor wafer into individual chips for each circuit;
Peeling the substrate from the adhesive layer surface to expose the bump top,
Place the bump formation surface of the chip at a predetermined position on the chip mounting board, and secure the conduction between the chip and the chip mounting board, and adhere and fix the chip to the chip mounting board through the adhesive layer A method for manufacturing a semiconductor device comprising the steps of:

  The flip chip mounting underfill tape according to the present invention can be applied to a semiconductor wafer having bumps without applying a large tension at room temperature, and an underfill without voids can be easily formed.

Hereinafter, the present invention will be described more specifically with reference to the drawings.
As shown in FIG. 1, the underfill tape 4 for flip-chip mounting of this invention consists of the base material 1 and the adhesive layer 2 formed in the single side | surface, and before that use, an adhesive agent is used. A release film 3 for protecting the layer 2 is temporarily attached on the adhesive layer 2.

Examples of the substrate 1 include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyurethane film, ethylene vinyl acetate film, ionomer resin film, ethylene A film such as a (meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, or a fluororesin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Furthermore, these films may be transparent films, colored films or opaque films.

In the method for manufacturing a semiconductor device according to the present invention, as will be described later, in order to transfer the adhesive layer 2 on the substrate 1 to the chip mounting surface of the circuit board, the substrate 1 and the adhesive layer 2 are laminated so as to be peelable. For this reason, the surface tension of the surface of the substrate 1 in contact with the adhesive layer 2 is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. Such a film having a low surface tension can be obtained by appropriately selecting the material, and by applying a release agent such as a silicone resin or an alkyd resin to the surface of the film and performing a release treatment. It can also be obtained.

The film thickness of such a base material 1 is usually 5 to 250 μm, preferably 8 to 175 μm, and particularly preferably about 10 to 125 μm.
The adhesive that forms the adhesive layer 2 refers to an adhesive that exhibits adhesiveness at room temperature in the initial state and is cured by a trigger such as heating and exhibits strong adhesiveness.

  As such an adhesive, a conventionally known adhesive is used without any particular limitation. Examples of the adhesive include a mixture of a binder resin having a pressure-sensitive adhesive property at room temperature and a thermosetting resin. Examples of the binder resin having pressure-sensitive adhesive properties at room temperature include acrylic resins, polyester resins, polyvinyl ether resins, urethane resins, polyamide resins, and the like, and acrylic resins are particularly preferable. Thermosetting resins are generally epoxy resins, phenoxy resins, phenol resins, resorcinol resins, urea resins, melamine resins, furan resins, unsaturated polyester resins, silicone resins, etc., in combination with an appropriate curing accelerator. Used. Various such thermosetting resins are known, and various known thermosetting resins can be used without particular limitation in the present invention, but epoxy resins and phenol resins are particularly preferable. Moreover, in order to make peeling from the base material 1 surface easy, it is preferable that the adhesive layer 2 has an energy-beam curable component. By curing the energy ray-curable component, the adhesive force is reduced, so that the substrate 1 can be easily peeled from the surface. As the energy ray curable component, an ultraviolet curable resin such as urethane acrylate oligomer or dipentaerythritol hexaacrylate is preferably blended. When an ultraviolet curable resin is blended, it adheres well to the base material 1 before the ultraviolet irradiation, and is easily peeled off from the base material 1 after the ultraviolet irradiation.

The adhesive layer 2 may contain a photopolymerization initiator, a thermally activated latent curing agent, and a crosslinking agent.
When ultraviolet rays are used as energy rays, the polymerization curing time and irradiation amount can be reduced by adding a photopolymerization initiator. As the photopolymerization initiator, benzophenone, acetophenone, benzoin and the like are preferable.

  Thermally activated latent curing agent is a curing agent that does not react with epoxy resin at room temperature but is activated by heating above a certain temperature and reacts with epoxy resin, and can be applied to wafers near room temperature before heat curing. After being placed on the chip mounting substrate, it is firmly bonded to the chip mounting substrate by heat curing.

  These thermally activated latent curing agents can be used singly or in combination of two or more, and dicyandiamide, an imidazole compound or a mixture thereof is particularly preferable.

  A cross-linking agent can be added to adjust the initial adhesive force and cohesive force before irradiation with energy rays. Examples of the crosslinking agent include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.

Adhesives composed of the above components have energy ray curability and heat curability, contribute to fixing the wafer by adhering to the substrate 1 without applying tension at room temperature, and mounting In this case, it can be used as an adhesive for bonding the chip and the chip mounting substrate. Finally, a cured product with high impact resistance can be obtained through thermal curing, and it has an excellent balance between shear strength and peel strength, and can maintain sufficient adhesive properties even under severe heat and humidity conditions. .

The film thickness of such an adhesive layer 2 is usually 10 to 500 μm, preferably 15 to 350 μm, and particularly preferably about 20 to 250 μm.
The underfill tape 4 for flip chip mounting as described above is applied to the circuit surface of a semiconductor wafer having bumps on the circuit surface, and at the same time, the bumps penetrate the adhesive layer 2 and the bump tops are in the substrate. It is preferably used in a method for manufacturing a semiconductor device including a step of penetrating into a semiconductor device, particularly a method for manufacturing a semiconductor device according to the present invention described later.

At this time, the circuit surface is covered without generation of voids, and the bump penetrates the adhesive layer 2, so that the average height of the bump (H _B ) and the thickness of the adhesive layer (T _A ) The ratio (H _B / T _A ) is 1.0 / 0.3 to 1.0 / 0.95, preferably 1.0 / 0.5 to 1.0 / 0.9, more preferably 1.0 / It is in the range of 0.6 to 1.0 / 0.85, particularly preferably 1.0 / 0.7 to 1.0 / 0.8. As shown in FIG. 2, the average height (H _B ) of the bumps is the height from the chip surface (circuit surface excluding the bumps) to the top of the bumps. .

  If the bump height is too high with respect to the thickness of the adhesive layer, there is a gap between the chip surface (circuit surface excluding the bump) and the chip mounting substrate, which causes voids. On the other hand, if the adhesive layer 2 is too thick, bumps do not penetrate the adhesive layer 2, which causes poor conduction.

Further, the ratio (T _S / T _A ) of the base material thickness (T _S ) and the adhesive layer thickness (T _A ) in the flip-chip mounting underfill tape 4 is preferably 0.5 or more. More preferably, it is 1.0 or more, and particularly preferably 2.0 or more.

  If the thickness of the substrate is too thin relative to the thickness of the adhesive layer, the bumps may not penetrate the adhesive layer 2 and cause conduction failure. This is because if the base material is thick to some extent, it plays a cushioning role, and the bump tip penetrates into the base material, making it easier for the bumps to penetrate. This is thought to be due to the difficulty.

  Before using the underfill tape 4 for flip chip mounting of the present invention, as described above, the release film 3 may be temporarily attached to protect the adhesive layer 2. As such a release film, various release films conventionally used for adhesive tapes can be used without any particular limitation. Specifically, in addition to the film exemplified as paper, metal foil, and substrate 1, the surface of a synthetic resin film such as a polyethylene terephthalate film, a polyethylene naphthalate film, or a polybutylene terephthalate film is peeled off such as a silicone resin or an alkyd resin. It can be obtained by applying an agent.

Next, a method for manufacturing a semiconductor device using the flip-chip mounting underfill tape of the present invention will be described.
First, as shown in FIG. 2, a semiconductor wafer 6 having bumps 5 on a circuit surface is prepared. Circuits and bumps are formed by conventional methods.

Next, the adhesive layer 2 of the flip-chip mounting underfill tape 4 according to the present invention described above is attached to the circuit surface of the semiconductor wafer 6. At this time, since the adhesive layer 2 has room temperature adhesiveness, when applying the flip-chip mounting underfill tape 4, it is necessary to apply pressure so that the bumps 5 penetrate the adhesive layer 2. However, it is not always necessary to apply heating or tension. In this way, when the flip-chip mounting underfill tape 4 is applied, the bumps 5 penetrate the adhesive layer 2 and the bump tops penetrate into the substrate.

  As a result, as shown in FIG. 3, the circuit surface and bumps of the semiconductor wafer 6 are protected by the flip-chip mounting underfill tape 4. In this state, the backside grinding of the semiconductor wafer 6 or other backside processing may be performed.

  Next, the semiconductor wafer 6 is cut and separated into individual chips for each circuit. The method for cutting and separating the wafer 6 is not particularly limited, and is performed by various conventionally known methods. For example, a normal dicing tape can be pressure-bonded to the back side of the wafer 6 and fixed to a ring frame through this, and the wafer can be cut and separated using a dicing apparatus to obtain a chip. Various dicing methods such as laser dicing can also be employed.

  Further, after forming a groove having a predetermined depth from the front surface side of the wafer, the wafer can be chipped by grinding from the back surface side and removing the bottom of the groove. This method is also called a “first dicing method” and is an effective means for obtaining an ultrathin chip. Further, a brittle portion serving as a cutting start point may be formed on the semiconductor wafer, and the wafer may be cut into chips by cleaving from the cutting start point by applying a thermal or mechanical shock to the wafer. The cutting starting point can be formed, for example, by condensing laser light inside the wafer and partially forming a modified portion inside the wafer or by cutting a groove.

  Next, the base material 1 is peeled off from the surface of the adhesive layer 2 to expose the bump tops. In addition, peeling of the base material 1 may be after the chip formation process mentioned above, and may be before the chip formation process. Moreover, when the adhesive layer 2 has ultraviolet curable properties, the adhesive layer is irradiated with ultraviolet rays prior to the peeling of the base material 1, and the base material 1 is peeled after the adhesive force is reduced. It is preferable.

  Through such a process, as shown in FIG. 4, the circuit surface is covered with the adhesive layer, the bump top part penetrates the adhesive layer, and the bump top part is the adhesive layer 2. A chip 7 protruding from is obtained.

  Next, the chip 7 is placed on the chip mounting substrate so that the bumps of the chip 7 are aligned so as to face the electrode portions of the chip mounting substrate, and the conduction between the chip and the chip mounting substrate is ensured. . Then, the chip | tip and the board | substrate for chip | tip mounting can be adhere | attached firmly by thermosetting the adhesive agent layer 2. FIG.

  Thereafter, the semiconductor device is obtained through a known process such as resin sealing.

The flip chip mounting underfill tape according to the present invention can be applied to a semiconductor wafer having bumps without applying a large tension at room temperature, and an underfill without voids can be easily formed. For this reason, the process is simplified, a highly reliable semiconductor device can be obtained, and the manufacturing cost of the semiconductor device can be reduced.
(Example)
EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples.

In the following examples and comparative examples, the “bump penetration amount” was evaluated as follows. "Bump penetration"
A gold ball solder was formed at a predetermined position on the wafer by using a bump bonder (SBB4 manufactured by Shinkawa Co., Ltd.), which was melted and stretched to form a bump having a predetermined height.

Using a sticking device (RAD-3500 m / 8 (manufactured by Lintec Corporation)), with a sticking speed of 3 mm / second, a load of 0.3 MPa, a laminating roller hardness of 50, a laminating roller temperature of 25 ° C, and a table temperature of 25 ° C, The underfill tape prepared in Examples and Comparative Examples was attached to the formed wafer. After pasting, the adhesive layer is UV-cured with an ultraviolet irradiation device (RAD-2000 m / 8 (Lintec Co., Ltd.)) with a light intensity of 110 mJ / cm ² and an illuminance of 150 mW / cm ² , and the substrate is peeled off. Then, the following evaluation was performed.
(1) Using an electron microscope (manufactured by Hitachi, Ltd., Hitachi Scanning Electron Microscope S-2360), observe the surface of the adhesive layer, the top of the bump penetrates the adhesive layer, Visually confirmed that it was possible.
(2) Using a wide-field confocal microscope (HD100D (Lasertec Corp.)), the height of the bump penetrating the adhesive layer surface side (μm, from the adhesive layer surface to the bump apex) ) Was measured (n = 10).

In the examples and comparative examples, the binder resin (A), the thermosetting resin (B), the thermally activated latent curing agent (C), the ultraviolet curable resin (D), the photopolymerization initiator (E), and The following were used as a crosslinking agent (F).
(A) Binder resin (acrylic resin)
A copolymer having a weight average molecular weight of 300,000 obtained by copolymerization of 55 parts by weight of butyl acrylate, 10 parts by weight of methyl methacrylate, 20 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate was converted into an organic solvent (toluene / ethyl acetate). = 6/4) dissolved solution (solid concentration 50%)
(B) Thermosetting resin (epoxy resin)
Bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd., Epicoat 828
, Epoxy equivalent 180-200 eq / g) 22 parts by weight and solid bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd., Epicoat 1055, epoxy equivalent 800-900 eq / g) dissolved in organic solvent (methyl ethyl ketone) (Solid concentration is 60%) 44 parts by weight (solid ratio) and o-cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-104S, epoxy equivalent 210-230 g / eq) in an organic solvent (methyl ethyl ketone) (C) 1 part by weight of a heat-activatable latent curing agent dicyandiamide (manufactured by Asahi Denka Kogyo Co., Ltd., Hardener 3636AS) A mixture of 1 part by weight of 2-phenyl-4,5-hydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., Curesol 2PHZ) in an organic solvent (methyl ethyl ketone) Solution solution (solid concentration 30%)
(D) Ultraviolet curable resin dipentaerythritol hexaacrylate (E) Benzophenone photopolymerization initiator Irgacure 184 (Ciba Specialty Chemicals Co., Ltd.) 30 parts by weight in an organic solvent (toluene) 100 parts by weight (solid) (Concentration is 30%)
(F) Isocyanate-based crosslinking agent Coronate L (manufactured by Nippon Polyurethane Industry Co., Ltd., solid concentration 75%) 100 parts by weight of an organic solvent (toluene) 172 parts by weight (solid concentration 38%)
Example 1
(A) 20 parts by weight, (B) 80 parts by weight, (C) 2 parts by weight, (D) 10 parts by weight, (E) 0.3 parts by weight, (F) 0. 3 parts by weight was mixed, and methyl ethyl ketone was mixed so that the solid concentration was 55% to obtain an adhesive layer. This adhesive layer was applied to the release surface of a release film (trade name SP-PET3811, manufactured by Lintec Co., Ltd.) in which a silicone resin was applied to a polyethylene terephthalate film so that the applied thickness after drying was 35 μm. And dried at 100 ° C. for 1 minute. Next, it was bonded to a low density polyethylene film (thickness 110 μm, surface tension 31 mN / m) to obtain an underfill tape.

(Example 2)
An underfill tape was obtained in the same manner as in Example 1 except that the coating thickness of the adhesive layer after drying was 45 μm.

(Example 3)
An underfill tape was obtained in the same manner as in Example 1 except that the coating thickness of the adhesive layer after drying was 50 μm.

Example 4
An underfill tape was obtained in the same manner as in Example 1 except that the coating thickness of the adhesive layer after drying was 60 μm.

(Example 5)
The adhesive thickness obtained in Example 1 was applied to the release-treated surface of a release film (trade name SP-PET3811, manufactured by Lintec Corporation), and the coating thickness of the adhesive layer after drying was 50 μm. It was applied so that it was dried at 100 ° C. for 1 minute. Next, it was bonded to a low density polyethylene film (thickness 50 μm, surface tension 32 mN / m) to obtain an underfill tape.

(Example 6)
The adhesive thickness obtained in Example 1 was applied to the release-treated surface of a release film (trade name SP-PET3811, manufactured by Lintec Corporation), and the coating thickness of the adhesive layer after drying was 50 μm. It was applied so that it was dried at 100 ° C. for 1 minute. Next, it was bonded to a low density polyethylene film (thickness 160 μm, surface tension 31 mN / m) to obtain an underfill tape.

(Example 7)
The underfill tape of Example 1 was applied to the circuit surface of a semiconductor wafer (6 inches, thickness 300 μm, bump height 55 μm) on which a predetermined circuit pattern was formed, and the bump tops were penetrated into the substrate. (Tape sticking device: Adwill RAD-2500m / 8; manufactured by Lintec Corporation). Subsequently, ultraviolet irradiation (ultraviolet irradiation device: Adwill RAD-2000m / 8; manufactured by Lintec Corporation) was performed from the substrate side of the underfill tape.

Using a dicing machine (DFG-2H / 6T; manufactured by DISCO Corporation), the wafer back surface is marked along the dicing line on the wafer circuit surface, and the circuit pattern is cut and separated on the basis of this. Got. Next, the substrate was peeled off, and the chip was picked up and stored in a chip tray with the adhesive layer remaining on the chip circuit surface.

  Next, using a flip chip bonder (FB30T-M manufactured by Kyushu Matsushita Electric Industrial Co., Ltd.), it was mounted on an evaluation chip mounting substrate having a wiring pattern corresponding to the position of the bump. During mounting, the stage temperature was 60 ° C., the head temperature was 130 ° C., the load was 20 N, and the time was 60 seconds.

After mounting, it was kept in an oven at 150 ° C. for 60 minutes, and the adhesive layer was completely cured to obtain a semiconductor device. The resistance value between each terminal of the obtained semiconductor device is measured using a low resistivity meter (Loresta-GPMCP-T600; manufactured by Mitsubishi Chemical Corporation), and conduction between terminals to be conducted and insulation between other terminals are measured. It was confirmed.
(Comparative Example 1)
An underfill tape was obtained in the same manner as in Example 5 except that the coating thickness of the adhesive layer after drying was 10 μm.
(Comparative Example 2)
An underfill tape was obtained in the same manner as in Example 1 except that the adhesive layer was dried so that the thickness of the adhesive layer after drying was 65 μm.

The results are summarized in Table 1.
(Comparative Example 3)
The adhesive thickness obtained in Example 1 was applied to the release-treated surface of a release film (trade name SP-PET3811, manufactured by Lintec Corporation), and the coating thickness of the adhesive layer after drying was 50 μm. It was applied so that it was dried at 100 ° C. for 1 minute. Next, it was bonded to a polypropylene film (thickness 20 μm, surface tension 31 mN / m) to obtain an underfill tape.

It is sectional drawing of the underfill tape for flip chip mounting which concerns on this invention. It is sectional drawing of the semiconductor wafer in which bump was formed. The state which affixed the underfill tape for flip chip mounting to the wafer is shown. The state which the bump penetrated the adhesive layer is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Base material 2 ... Adhesive layer 3 ... Release film 4 ... Underfill tape 5 for flip chip mounting ... Bump 6 ... Semiconductor wafer 7 ... Semiconductor chip

Claims (2)

It consists of a base material and an adhesive layer formed so as to be peelable thereon,
A semiconductor device comprising a step of attaching an adhesive layer to a circuit surface of a semiconductor wafer having bumps on a circuit surface, and simultaneously, the bump penetrates the adhesive layer and penetrates the top of the bump into a substrate. An underfill tape for flip chip mounting used in a manufacturing method,
The ratio (H _B / T _A ) between the average height (H _B ) of the bumps and the thickness (T _A ) of the adhesive layer is 1.0 / 0.3 to 1.0 / 0.95 The thickness of the base material (T _S ) and the thickness of the adhesive layer (
T _A) and the ratio (T _S / T _A) underfill tape for flip-chip mounting is 0.5 or more. The adhesive layer of the underfill tape for flip chip mounting according to claim 1 is applied to the circuit surface of a semiconductor wafer having bumps on the circuit surface, and at the same time, the bumps penetrate the adhesive layer, A step of penetrating the top portion into the base material,
Cutting and separating the semiconductor wafer into individual chips for each circuit;
Peeling the substrate from the adhesive layer surface to expose the bump top,
Place the bump formation surface of the chip at a predetermined position on the chip mounting board, and secure the conduction between the chip and the chip mounting board, and adhere and fix the chip to the chip mounting board through the adhesive layer A method for manufacturing a semiconductor device comprising the steps of:

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