JP2005210093A - Substrate with muti-layer reflective film, exposure reflection type mask blank, exposure reflection type mask, and manufacturing methods for these - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate with a multi-layer reflective film for suppressing the peeling of a conductive film and the generation of a particle due to abnormal discharge when the substrate with the conductive film is electrostatically chucked, to provide a high-quality exposure reflection type mask blank where surface defects due to the particle hardly occur, and a high-quality exposure reflection type mask where there is no pattern defect due to the particle. <P>SOLUTION: The substrate 10 with the multi-layer reflective film has a the multi-layer reflective film 3 reflecting exposed light on the substrate 1 and the conductive film 2 formed in an area of the substrate 1 except at least its periphery on the opposite side of the substrate 1 to the multi-layer reflective film 3. The conductive film 2 is composed of a material containing e.g. chromium (Cr), and nitrogen (N) is contained in the substrate 1 side of the conductive film 2, and at least either oxygen(O) or carbon(C) is contained at the surface side of the conductive film. An absorbent film absorbing the exposed light is formed on the multi-layer reflective film 3 of the of the substrate 10 with the multi-layer reflective film, thereby, the exposure reflection type mask blank is obtained. Further, a pattern is formed on the absorbent film of the exposure reflection type mask blank, thereby, the exposure reflection type mask is obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, a reflective mask blank for exposure and a reflective mask for exposure using the substrate, and methods for producing the same.

In recent years, in the semiconductor industry, with the miniaturization of semiconductor devices, EUV lithography (EUVL), which is an exposure technique using extreme ultra violet (EUV) light, is promising. Here, EUV light refers to light in the wavelength band of the soft X-ray region or the vacuum ultraviolet region, and specifically refers to light having a wavelength of about 0.2 to 100 nm. As a mask used in this EUV lithography, an exposure reflective mask as described in JP-A-8-213303 has been proposed.
Such a reflective mask has a structure in which a multilayer reflective film that reflects EUV light is provided on a substrate, and an absorber film that absorbs EUV light is provided in a pattern on the multilayer reflective film. . In an exposure machine (pattern transfer device) equipped with such a reflective mask, the exposure light incident on the reflective mask is absorbed in a portion where the absorber film pattern is present, and a multilayer reflective film in a portion where the absorber film pattern is absent. The light image reflected by is transferred onto the semiconductor substrate (silicon wafer with resist) through the reflection optical system.

As the multilayer reflective film, a multilayer film in which a substance having a relatively high refractive index and a substance having a relatively low refractive index are alternately laminated on the order of several nm is usually used. For example, a multilayer film in which thin films of Si and Mo are alternately stacked is known as one having a high reflectivity for 13 to 14 nm EUV light.
The multilayer reflective film can be formed on the substrate by, for example, ion beam sputtering. In the case where Mo and Si are contained, ion beam sputtering is performed by alternately irradiating the Si target and the Mo target with ion beams, and is laminated for 30 to 60 cycles, preferably 40 cycles, and finally a Si film is formed as a protective film. At this time, in order for the multilayer reflective film to have a uniform film thickness distribution in the substrate surface, the substrate disposed toward the sputtering target surface is the substrate with the normal passing through the center of the substrate main surface as the rotation axis. It is preferable to perform sputter film formation while rotating.

For example, a multilayer reflective film can be formed using an ion beam sputtering apparatus as shown in FIG. The ion beam sputtering apparatus 40 shown in FIG. 4 includes a sputtering ion source 41, a sputtering target support means 43, and a substrate support means 47 in a vacuum chamber 48.
Sputter target support means 43 is equipped with sputter targets 44 and 45 for forming a multilayer reflective film made of at least two materials, and the sputter target support means 43 is directed toward the ion source 41 for sputtering. It is equipped with a rotation mechanism so that it can be moved.
The substrate support means 47 is provided toward the sputter target surface, and an angle adjusting means (not shown) that can be arranged at a predetermined angle with respect to the sputter target surface, and the center of the substrate main surface Is provided with a rotation mechanism (not shown) for rotating the substrate 1 with the direction of the axis passing through the rotation axis as a rotation axis.

When the multilayer reflective film is formed by sputtering, first, ions 42 of an inert gas are extracted from the sputtering ion source 41 and irradiated to the sputtering target 44 (or the sputtering target 45). Then, atoms constituting the sputter target 44 (or sputter target 45) are knocked out by collision of ions, and a target material 46 is generated. At a position facing the sputter target 44 (or the sputter target 45), a substrate support means 47 on which the substrate 1 is mounted is provided, and the target material 46 adheres onto the substrate to form a thin film layer (alternate multilayer film). One thin film layer) is formed.
Next, by rotating the sputter target support means 43, the sputter target 45 (or sputter target 44) different from the previous one is opposed to the sputter ion source 41, and the other thin film layer constituting the alternate multilayer film is formed. Form. By repeating these operations alternately, a multilayer reflective film consisting of tens to hundreds of layers is formed on the substrate.

Incidentally, a mechanical chuck or an electrostatic chuck is used as the substrate support means 47, but an electrostatic chuck is preferably used because the load on the substrate is small. However, in the case of a substrate having low conductivity such as a glass substrate, in order to obtain a chucking force comparable to that of a silicon wafer, for example, it is necessary to apply a high voltage, so there is a risk of causing dielectric breakdown.
In order to solve such a problem, Patent Document 1 discloses a substrate that promotes electrostatic chucking of a substrate as compared with a glass substrate such as Si, Mo, Cr, chromium oxynitride (CrON), or TaSi. A mask substrate having a backside coating (conductive film) of a high conductivity material is described.
Japanese translation of PCT publication No. 2003-501823

However, as can be seen from FIG. 3A, the mask substrate described in Patent Document 1 is not only the entire back surface of the substrate 1, that is, the main surface 11b of the substrate 1, but also the peripheral surface thereof. Since, for example, the CrON conductive film 2 is formed on the chamfered surface 12 and the side surface 13, there are the following problems.
First, since the adhesion of the CrON film to the glass substrate is weak, when the substrate is electrostatically chucked and the multilayer reflective film is formed by the ion beam sputtering, the film is peeled off between the glass substrate and the CrON film. This occurs and particles are generated. In particular, in the vicinity of the boundary with the electrostatic chuck 50, film peeling is likely to occur due to the force applied to the vicinity of the boundary with the electrostatic chuck 50 due to the rotation of the substrate.
Second, since the conductive film 2 is formed on the entire surface including the chamfered surface 12 and the side surface 13 of the substrate 1, the chamfered surface 12 and the side surface 13 of the substrate 1, in particular, have the chamfered surface 12 and the side surface 13. In the situation where the film adhesion force due to the formation of the conductive film on the surface is particularly weak, film peeling is likely to occur due to the warp of the substrate during electrostatic chucking.
Third, since the surface of the CrON conductive film 2 contains oxygen (O), abnormal discharge may occur during the formation of the multilayer reflective film or absorber film depending on the film formation conditions.

  When particles are generated due to peeling of the conductive film or abnormal discharge during film formation during electrostatic chucking (during film formation), products (substrates with multilayer reflective films, reflective mask blanks for exposure, and exposure products) There are many defects in the reflective mask), and a high-quality product cannot be obtained. In the case of pattern transfer using a conventional transmissive mask for exposure, the wavelength of exposure light is relatively long in the ultraviolet region (about 150 to 247 nm). Therefore, the generation of particles during film formation has not been recognized as a problem in the past. However, when light having a short wavelength such as EUV light is used as exposure light, even if there are fine irregularities on the mask surface, the influence on the transferred image is increased, so generation of particles cannot be ignored. As a result of earnest research, the present inventor has newly found that there is a problem that the conductive film is peeled off during the electrostatic chuck described above and particles are generated due to abnormal discharge during the film formation.

  Accordingly, an object of the present invention is, firstly, to provide a substrate with a multilayer reflective film in which generation of particles due to film peeling or abnormal discharge during electrostatic chucking of a substrate provided with a conductive film is suppressed, and a method for manufacturing the same. Second, to provide a high-quality reflective mask blank for exposure with few surface defects due to particles and a method for manufacturing the same, and third, high-quality exposure without pattern defects due to particles The present invention provides a reflective mask for use and a manufacturing method thereof.

In order to solve the above problems, the present invention has the following configuration.
(Configuration 1) A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, and a region excluding at least a peripheral portion of the substrate on the opposite side of the multilayer reflective film across the substrate A substrate with a multilayer reflective film, wherein a conductive film is formed on the substrate.
According to Configuration 1, a conductive film is formed in a region excluding at least the peripheral portion of the substrate on the opposite side of the multilayer reflective film across the substrate, and no conductive film is formed on at least the chamfered surface and the side surface of the substrate. Therefore, it is possible to prevent generation of particles due to film peeling at the peripheral edge when the conductive film is also formed on the peripheral edge of the substrate. Therefore, for example, even when the substrate is warped during electrostatic chucking, the generation of particles from the peripheral portion of the substrate can be prevented.
In the present invention, the peripheral portion of the substrate means a side surface of the substrate provided perpendicular to the main surface of the substrate on which the multilayer reflective film is formed, and a chamfer provided between the main surface and the side surface. It shall mean a surface.

(Configuration 2) A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, wherein a conductive film is formed on the opposite side of the multilayer reflective film across the substrate. A substrate with a multilayer reflective film, wherein the surface is a metal nitride film substantially free of oxygen (O).
According to Configuration 2, when the surface of the conductive film that is in contact with the electrostatic chuck is a metal nitride film that does not substantially contain oxygen (O), abnormal discharge is caused when the multilayer reflective film or the absorber film is formed. Since generation | occurrence | production can be prevented, generation | occurrence | production of the particle to a multilayer reflective film or an absorber film | membrane can be prevented.
(Structure 3) The substrate with a multilayer reflective film according to Structure 2, wherein the conductive film is a metal nitride film.
According to Configuration 3, since the entire conductive film is made of a metal nitride film, the adhesion of the conductive film to the substrate is improved, and the film peeling of the conductive film can be prevented, thereby preventing the generation of particles due to film peeling. Can do.
(Configuration 4) A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, wherein a conductive film made of a material containing a metal is disposed on the opposite side of the multilayer reflective film across the substrate. The material for forming the conductive film is different in composition in the film thickness direction of the conductive film, the substrate side of the conductive film contains nitrogen (N), and the conductive film is formed on the surface side of the conductive film. Includes at least one of oxygen (O) and carbon (C).
According to Configuration 4, the conductive film is made of a material containing metal on the opposite side of the multilayer reflective film across the substrate, and the material forming the conductive film has a different composition in the film thickness direction. Since the conductive film containing nitrogen (N) is included on the substrate side of the film and at least one of oxygen (O) and carbon (C) is formed on the surface side, the conductive film is in close contact with the substrate. Both electrostatic force and adhesion between the electrostatic chuck and the substrate are improved. Generation of particles due to peeling of the conductive film or friction between the electrostatic chuck and the substrate caused by insufficient adhesion between the electrostatic chuck and the substrate. Can prevent the generation of particles. In addition, since the film peeling of the conductive film caused by the force applied near the boundary of the electrostatic chuck due to the rotation of the substrate can be prevented, the generation of particles can be prevented.

Here, when nitrogen (N) is contained on the substrate side of the conductive film, the adhesion of the conductive film to the substrate is improved, preventing the conductive film from peeling, and further reducing the film stress of the conductive film. Therefore, the adhesion between the electrostatic chuck and the substrate can be increased. In addition, since at least one of oxygen (O) and carbon (C) is contained on the surface side of the conductive film, the surface of the conductive film is appropriately roughened, and the electrostatic chuck and the substrate at the time of electrostatic chuck This increases the adhesion force, and can prevent rubbing that occurs between the electrostatic chuck and the substrate. Note that when oxygen (O) is included, the surface roughness of the surface of the conductive film is appropriately roughened (the surface roughness is increased), thereby improving the adhesion between the electrostatic chuck and the substrate. In addition, when carbon (C) is included, the specific resistance of the conductive film can be reduced, so that the adhesion between the electrostatic chuck and the substrate is improved.
In addition, since the film material of the conductive film has high adhesion to the substrate, even if the conductive film is formed on the peripheral portion of the substrate, that is, the chamfered surface or the side surface of the substrate, film peeling can be suppressed. .

(Structure 5) The substrate is a glass substrate, and the metal is at least one material selected from chromium (Cr), tantalum (Ta), molybdenum (Mo), and silicon (Si). The substrate with a multilayer reflective film according to any one of configurations 1 to 4.
According to Configuration 5, when the substrate material is glass, the metal material forming the conductive film is at least one selected from chromium (Cr), tantalum (Ta), molybdenum (Mo), and silicon (Si). By using the material, adhesion to the substrate is good, so that film peeling can be prevented and generation of particles due to film peeling can be prevented.
(Structure 6) The multilayer reflective film-coated substrate according to any one of Structures 1 to 5, wherein the conductive film contains helium (He).
According to Configuration 6, since the conductive film contains helium (He), the film stress of the conductive film can be further reduced, and the surface of the conductive film can be further appropriately roughened. It is possible to further improve the adhesion force between and prevent the generation of particles.

(Structure 7) An exposure reflection type characterized in that at least an absorber film that absorbs exposure light is formed on the multilayer reflective film in the multilayer reflective film-coated substrate according to any one of Structures 1 to 6. Mask blanks.
According to Configuration 7, since the multilayer reflective film-coated substrate according to any one of Configurations 1 to 6 is used, and an absorber film that absorbs exposure light is formed thereon to form a reflective mask blank for exposure, A reflective mask blank for exposure with very few surface defects due to particles.
Note that a buffer film having an etching stopper function for protecting the multilayer reflective film at the time of pattern formation on the absorber film can be provided between the absorber film and the multilayer reflective film.
(Structure 8) A reflective mask for exposure, wherein an absorber film pattern serving as a transfer pattern is formed on the absorber film in the reflective mask blank according to Structure 7.
According to Configuration 8, since the reflective mask blank described in Configuration 7 is used and a pattern is formed on the absorber film to form a reflective mask for exposure, the reflective mask for exposure is free from pattern defects due to particles. .

(Configuration 9) A step of preparing a substrate with a conductive film in which a conductive film is formed in a region excluding at least a peripheral portion of the substrate on the substrate, and a side of the substrate with the conductive film on which the conductive film is formed are electrostatically And a step of forming a multilayer reflective film that reflects exposure light on the opposite side of the conductive film with the substrate sandwiched therebetween, and a method for manufacturing a substrate with a multilayer reflective film.
According to Configuration 9, a substrate with a conductive film in which a conductive film is formed in at least the peripheral portion of the substrate is used, the substrate with the conductive film is held by an electrostatic chuck, and a multilayer is formed on the opposite side of the substrate to the conductive film. By forming the reflective film, the generation of particles from the peripheral edge of the substrate during electrostatic chucking can be prevented, so that a substrate with a multilayer reflective film free from surface defects due to particles can be obtained.
(Structure 10) The multilayer reflective film is formed by sputtering while rotating the substrate with the conductive film held by an electrostatic chuck while facing the sputtering target surface for forming the multilayer reflective film. The manufacturing method of the board | substrate with a multilayer reflective film of the structure 9 to do.
According to Configuration 10, the multilayer reflective film is formed by sputtering while rotating the substrate with the conductive film of Configuration 9 held by the electrostatic chuck while facing the sputtering target surface for forming the multilayer reflective film. The multilayer reflective film is formed so as to have a uniform film thickness distribution in the substrate surface. In addition, since generation of particles during electrostatic chucking can be prevented, a substrate with a multilayer reflective film free from surface defects due to particles can be obtained.

(Configuration 11) The method includes a step of forming an absorber film that absorbs exposure light on the multilayer reflection film of the substrate with a multilayer reflection film obtained by the method for manufacturing a substrate with a multilayer reflection film according to Configuration 9 or 10. A method for producing a reflective mask blank for exposure characterized by the above.
According to the structure 11, since the substrate with a multilayer reflective film obtained by the structure 9 or 10 is used, an absorber film that absorbs exposure light is formed thereon, and the reflective mask blank for exposure is manufactured. It is possible to obtain a reflective mask blank for exposure with very few surface defects.
(Structure 12) Reflection for exposure, wherein an absorber film pattern serving as a transfer pattern is formed on the absorber film of the reflective mask blank obtained by the method for producing a reflective mask blank for exposure according to Structure 11. Mold mask manufacturing method.
According to the structure 12, since the reflective mask blank for exposure obtained by the structure 11 is used and a pattern is formed on the absorber film to manufacture the reflective mask for exposure, the exposure mask without pattern defects due to particles is produced. A reflective mask can be obtained.

According to the present invention, it is possible to prevent generation of particles due to peeling of the conductive film or abnormal discharge during electrostatic chucking of the substrate provided with the conductive film, so that the exposure light is reflected on the substrate held by the electrostatic chuck. By forming the multilayer reflective film, a substrate with a multilayer reflective film free from surface defects due to particles can be obtained.
In addition, according to the present invention, by using the above-mentioned substrate with a multilayer reflective film, an absorber film that absorbs exposure light is formed on the multilayer reflective film, so that high-quality exposure with very few surface defects caused by particles can be achieved. A reflective mask blank is obtained.
Further, according to the present invention, by using the above-described reflective mask blank for exposure, an absorber film pattern serving as a transfer pattern is formed on the absorber film, thereby enabling high-quality exposure without pattern defects caused by particles. A reflective mask is obtained.

Hereinafter, embodiments of the present invention will be described in detail.
A first embodiment of a substrate with a multilayer reflective film of the present invention has a multilayer reflective film that reflects exposure light on the substrate, and at least of the substrate on the opposite side of the multilayer reflective film across the substrate. This is a substrate with a multilayer reflective film in which a conductive film is formed in a region excluding the peripheral edge.
As shown in FIG. 1, the substrate with a multilayer reflective film is a substrate with a conductive film in which a conductive film 2 is formed on the substrate 1 in a region excluding at least the peripheral portion (see FIG. 1A). It is obtained by preparing and forming a multilayer reflective film 3 on the opposite side of the conductive film 2 across the substrate 1 (see FIG. 5B). The multilayer reflective film 3 holds the side of the substrate with the conductive film on which the conductive film 2 is formed by an electrostatic chuck, and the substrate with the conductive film held by the electrostatic chuck is a sputtering target for forming the multilayer reflective film. It can be formed by sputter deposition while rotating in a state facing the surface. Since a glass substrate is preferably used as the substrate 1, a good electrostatic chucking force can be obtained at a low voltage by forming the conductive film 2 on the substrate. In the present invention, since the conductive film 2 is formed in a region excluding at least the peripheral portion of the substrate 1, generation of particles from the peripheral portion of the substrate during electrostatic chucking can be prevented, and thereby surface defects caused by the particles A substrate 10 with a multilayer reflective film free from the above is obtained.

  As described above, in the present invention, since the conductive film 2 is formed in a region excluding at least the peripheral portion of the substrate 1, the chamfered surface 12 and the side surface 13 of the substrate 1 are formed as can be seen with reference to FIG. Except for the main surface 11b of the substrate 1, the conductive film 2 can be formed on the entire surface. Alternatively, the conductive film 2 may be formed on one main surface 11 b of the substrate 1 except for a region inside the side surface 13 of the substrate 1 by a predetermined length W. The predetermined length W in this case can be appropriately set in consideration of the size of the substrate 1 and the size (area) of the electrostatic chuck surface, but is in a range not exceeding approximately 3 cm. Of course, since the conductive film 2 is not formed on the chamfered surface 12 of the substrate 1, the lower limit of the predetermined length W is the length L from the side surface 13 of the substrate 1 to the edge of the one main surface 11b.

The second embodiment of the substrate with a multilayer reflective film of the present invention has a multilayer reflective film that reflects exposure light on the substrate, and a conductive film on the opposite side of the multilayer reflective film across the substrate. The surface of the conductive film is a substrate with a multilayer reflective film made of a metal nitride film that does not substantially contain oxygen. By forming a conductive film made of such a material on the substrate, abnormal discharge can be prevented when the multilayer reflective film or absorber film is formed. Generation of particles can be prevented.
In addition, since the entire conductive layer is made of a metal nitride film, the adhesion of the conductive film to the substrate is improved, so that the conductive film can be prevented from peeling off during electrostatic chucking and the generation of particles due to film peeling is prevented. can do.
Since the film material of the conductive film has high adhesion to the substrate, even if the conductive film is formed on the peripheral portion of the substrate, that is, the chamfered surface and the side surface of the substrate, the film does not easily peel off. However, from the viewpoint of more reliably preventing the generation of particles from the peripheral edge of the substrate, it is preferable to form the conductive film of the above film material in a region excluding the peripheral edge of the substrate.
The third embodiment of the substrate with a multilayer reflective film of the present invention has a multilayer reflective film that reflects exposure light on the substrate, and a metal is disposed on the opposite side of the multilayer reflective film across the substrate. A conductive film made of a material containing the conductive film is formed, and the material forming the conductive film has a different composition in the film thickness direction of the conductive film. The conductive film contains nitrogen (N) on the substrate side and on the surface side. Is a substrate with a multilayer reflective film containing at least one of oxygen (O) and carbon (C). By forming a conductive film made of such a material on the substrate, both the adhesion of the conductive film to the substrate and the adhesion between the electrostatic chuck and the substrate can be improved. Generation of particles due to generation or rubbing between the electrostatic chuck and the substrate caused by insufficient adhesion between the electrostatic chuck and the substrate can be prevented. Since the film material of the conductive film has high adhesion to the substrate, even if the conductive film is formed on the peripheral portion of the substrate, that is, the chamfered surface and the side surface of the substrate, the film does not easily peel off. However, from the viewpoint of more reliably preventing the generation of particles from the peripheral edge of the substrate, it is preferable to form the conductive film of the above film material in a region excluding the peripheral edge of the substrate.

When the substrate material is glass, the metal is preferably at least one material selected from chromium (Cr), tantalum (Ta), molybdenum (Mo), and silicon (Si). A particularly preferable material is chromium (Cr).
When the metal is chromium (Cr), examples of the material containing chromium (Cr) and further containing nitrogen (N) include CrN and CrCN. In this case, the content of nitrogen (N) is preferably 1 to 60 at%. In particular, in the case of CrN, the preferable content of nitrogen (N) is 40 to 60 at%. By including nitrogen (N) in the material containing chromium (Cr) within this range, the adhesion of the conductive film to the substrate is improved and the film stress of the conductive film is reduced. The adhesion strength of can be increased. In addition, when the surface of the conductive film is a chromium nitride film that does not substantially contain oxygen (for example, CrN or CrCN), it is possible to prevent abnormal discharge during the formation of a multilayer reflective film or an absorber film. Examples of the material containing chromium (Cr) and containing at least one of oxygen (O) and carbon (C) include CrC and CrON. In this case, the content of oxygen (O) is preferably 0.1 to 50 at%, and the content of carbon (C) is preferably 0.1 to 10 at%. By containing oxygen (O) within this range, the surface roughness of the surface of the conductive film becomes moderately large, and the adhesion between the electrostatic chuck and the substrate can be improved. Moreover, by containing carbon (C) within this range, the specific resistance of the conductive film can be reduced, and the adhesion between the electrostatic chuck and the substrate can be improved.
When the metal is tantalum (Ta), examples thereof include TaN and TaBN. Moreover, when the said metal is molybdenum (Mo) or silicon (Si), MoN, SiN, MoSiN etc. are mentioned, for example. In this case, the nitrogen (N) content is preferably 10 to 60 at%. In particular, in the case of TaN, the preferable content of nitrogen (N) is 5 to 50 at%. As described above, by including nitrogen (N) in a material containing tantalum (Ta), molybdenum (Mo), and silicon (Si) within this range, adhesion of the conductive film to the substrate is improved, and Since the film stress is reduced, the adhesion between the electrostatic chuck and the substrate can be increased.

  Although the film-forming method for forming the said electrically conductive film on a board | substrate is not specifically limited, For example, reactive sputtering can be used suitably. The material containing Cr that forms the conductive film has a different composition in the film thickness direction of the conductive film. The conductive film contains nitrogen (N) on the substrate side and oxygen (O) and carbon (C on the surface side. As a method for forming the conductive film so as to include at least one of the following, for example, during the sputter deposition of the conductive film, the type of additive gas is changed, the sputtering target is changed or switched, the input voltage (applied voltage) The method of implementing means, such as a change of these, is mentioned suitably. In this case, it is preferable that the elements contained in the conductive film continuously change from the substrate side toward the conductive film surface. Since the elements contained in the conductive film continuously change from the substrate side toward the conductive film surface, the adhesion of the conductive film to the substrate and the adhesion between the electrostatic chuck and the substrate can be improved by the composition gradient. I can do it.

It is also a preferred embodiment that the conductive film is formed of a stacked film of different materials. In such an embodiment, for example, the conductive film is formed of a laminated film having a three-layer structure of CrN / CrC / CrON or CrN / CrCN / CrON in order from the substrate side. In this case, the conductive film contains chromium (Cr), nitrogen (N) on the substrate side, and oxygen (O) on the surface side. Of course, the laminated film need not be limited to such a three-layer structure, and may be, for example, two layers such as CrCN / CrON or four or more layers.
In the case where the conductive film is formed using a stacked film of different materials, the combination of the materials can reduce the film stress at the interface between the layers constituting the conductive film and increase the adhesion between the electrostatic chuck and the substrate. In addition, the adhesion of each layer constituting the conductive film can be improved, and film peeling can be suppressed.

  It is also a preferred embodiment that the conductive film contains helium (He). By containing helium (He) in the conductive film, the film stress of the conductive film can be further reduced, and the surface of the conductive film can be further appropriately roughened, so that the adhesion between the electrostatic chuck and the substrate can be further increased. It is possible to improve, and the generation of particles can be preferably prevented. Helium (He) may be included in the entire conductive film, or may be included in some layers or regions of the conductive film.

By the way, as a method of forming the conductive film in a region excluding at least the peripheral portion of the substrate, for example, at the time of forming the conductive film, at least the peripheral portion of the substrate is set so that film forming particles are not deposited on the peripheral portion of the substrate. A method of forming a conductive film on a substrate by sputtering using a masking (covering) holder is mentioned. An example of such a holder will be described with reference to FIGS. 5 is a plan view of the holder, FIG. 6 is an enlarged perspective view of part A in FIG. 5, and FIG. 7 is a sectional view taken along line VII-VII in FIG.
The holder 60 includes a square plate 61 whose four corners are chamfered. The plate 61 has a total of twelve substrate openings 62 formed, for example, in a 4 × 3 matrix as shown in FIG. The substrate openings 62 are all the same size and are formed in a rectangular shape slightly larger than the substrate 1 inserted into the holder 60. Further, an overhanging portion 63 is integrally projected on the inner side surface of the substrate opening 62 over the entire circumference except for the four corners, and the upper surface forms a masking surface 64 of the peripheral portion of the substrate 1. . As shown in FIG. 5, each row of substrate openings 62 is partitioned by ribs 65. The ribs 65 have a width twice that of the overhanging portion 63, and the upper surfaces thereof are front and rear. A common masking surface is formed for the substrates 1 arranged adjacent to each other. Of course, the masking surface 64 of the overhang 63 and the masking surface of the rib 65 form the same plane.

As shown in FIGS. 6 and 7, the holding portion 70 provided at the four corners of the substrate opening 62 and holding the corners of the substrate 1 is a substantially isosceles triangle whose top view is arcuate. The cross-sectional shape is formed in a plate-like body having a wedge shape. The upper surface of the holding portion 70 is an inclined surface 74 that inclines in a mortar shape so that the plate thickness gradually decreases from the outer edge portion 72 toward the longitudinal center portion 73a of the inner edge portion 73. The inclination angle θ of the inclined surface 74 is 2 to 3 degrees, the outer edge 72 is higher than the masking surface 64 of the overhang 63, and even at the lowest central portion 73 a of the inner edge 73. The height is formed to be higher than or substantially equal to the masking surface 64.
Therefore, when each corner 1A of the substrate 1 is placed on the holding portion 70, each corner 1A is supported in line contact with the upper edge of the outer edge 72 as shown in FIG. It is supported in a state where an appropriate gap is formed between the protruding portion 63 and the masking surface 64. Note that support wall surfaces 75 a and 75 b that support both side surfaces of the corner 1 </ b> A of the substrate 1 and a machining relief portion 76 are formed outside the holding portion 70. The machining clearance portion 76 is provided between the support wall surfaces 75a and 75b. Further, both ends 73 b of the inner end edge portion 73 of the holding portion 70 are located at the substantially center in the width direction of the side end of the overhang portion 63. Therefore, the side surface of the substrate 1 can only contact the inner wall surface of the substrate opening 62 at each corner 1A supported by the holding portion 70, and the other side surface portion does not contact the inner wall surface. .

Further, the B portion of the holder 60 shown in FIG. 5 has substantially the same configuration as the above-described A portion and the holding portion 70 except that the board openings 62 are provided on both sides thereof via the ribs 65. Is omitted.
In the holder 60 having such a structure, when the substrate 1 is inserted into each substrate opening 62, the corner 1A is supported in a line contact state with the upper outer edge 72 of the holding portion 70, and the corner Both side surfaces in the vicinity of the portion 1A are positioned in contact with the support wall surfaces 75a and 75b outside the holding portion 70. In this state, for example, when sputtering film formation is performed from below in FIG. 7, at least the peripheral portion of the substrate 1 is covered with the overhanging portion 63, so that the conductive film is formed in a region excluding at least the peripheral portion of the substrate 1. The Note that the region in which the conductive film excluding at least the peripheral portion of the substrate 1 is formed can be adjusted by the protruding width of the overhang portion 63.
The above-described holder for masking at least the peripheral portion of the substrate during film formation is merely an example, and the present invention is not limited to the embodiment in which the conductive film is formed using such a holder.

Moreover, the film thickness of the electrically conductive film formed on a board | substrate is although it does not specifically limit, Usually, the range of about 10-500 nm is suitable.
As the substrate material, a glass substrate can be preferably used. A glass substrate provides good smoothness and flatness, and is particularly suitable as a mask substrate. However, because of its low electrical conductivity, a high voltage is required to hold the substrate with an electrostatic chuck, causing dielectric breakdown. Although there is a fear, a sufficient chucking force can be obtained even at a low voltage by forming a conductive film on the electrostatic chuck side of the substrate as in the present invention. Examples of the glass substrate material include amorphous glass having a low thermal expansion coefficient (for example, SiO ₂ —TiO ₂ glass), quartz glass, crystallized glass on which β quartz solid solution is deposited, and the like. The substrate preferably has a smooth surface of 0.2 nmRms or less and a flatness of 100 nm or less in order to obtain high reflectivity and transfer accuracy. In the present invention, the unit Rms indicating smoothness is the root mean square roughness, and can be measured with an atomic force microscope. Further, the flatness in the present invention is a value indicating the surface warpage (deformation amount) indicated by TIR (total indicated reading). This is the difference in height between the highest position of the substrate surface above the focal plane and the lowest position below the focal plane when the plane defined by the least square method based on the substrate surface is the focal plane. Absolute value. Smoothness is indicated by smoothness in a 10 μm square area, and flatness is indicated by flatness in a 142 mm square area.

  The multilayer reflective film formed on the substrate opposite to the conductive film has a structure in which materials having different refractive indexes are alternately stacked, and can reflect light of a specific wavelength. For example, a Mo / Si multilayer reflective film in which Mo and Si are alternately stacked for about 40 cycles, which has a high reflectivity for EUV light of 13 to 14 nm, can be mentioned. Examples of other multilayer reflective films used in the EUV light region include Ru / Si periodic multilayer reflective films, Mo / Be periodic multilayer reflective films, Mo compound / Si compound periodic multilayer reflective films, and Si / Nb periodic multilayer reflective films. Examples thereof include a film, a Si / Mo / Ru periodic multilayer reflective film, a Si / Mo / Ru / Mo periodic multilayer reflective film, and a Si / Ru / Mo / Ru periodic multilayer reflective film. A substrate with a multilayer reflective film in which these multilayer reflective films are formed on a substrate is used as, for example, a substrate with a multilayer reflective film in an EUV reflective mask blank or an EUV reflective mask, or a multilayer reflective film mirror in an EUV lithography system.

  As described above, the multilayer reflective film is formed by sputter deposition while rotating the substrate with the conductive film held by the electrostatic chuck while facing the sputtering target surface for multilayer reflective film deposition. For example, a multilayer reflective film can be formed by ion beam sputtering using an ion beam sputtering apparatus as shown in FIG. Since the configuration of the apparatus of FIG. 4 has been described above, description thereof is omitted here. Note that, from the viewpoint of preventing generation of particles due to a target factor or the like during film formation, it is preferable to form the film with the substrate with the conductive film oriented vertically. In order to form the substrate with the conductive film in such a state while rotating, if the adhesion of the conductive film to the substrate or the adhesion between the electrostatic chuck and the substrate is weak, film peeling of the conductive film, The present invention is particularly suitable because particles are likely to be generated due to friction between the electrostatic chuck and the substrate.

By forming an absorber film that absorbs exposure light on the multilayer reflective film of the multilayer reflective film-coated substrate according to the present invention, a reflective mask blank for exposure is obtained. If necessary, a buffer film for protecting the multilayer reflective film may be provided between the multilayer reflective film and the absorber film, which is resistant to the etching environment during pattern formation on the absorber film. . According to the present invention, since the reflective mask blank is formed by using the above-mentioned substrate with a multilayer reflective film, it is possible to obtain a reflective mask blank with extremely few surface defects due to particles.
As the material of the absorber film, a material having a high exposure light absorptivity and a sufficiently large etching selection ratio with a film (usually a buffer film or a multilayer reflective film) located below the absorber film is selected. For example, a material having Ta as a main metal component is preferable. In this case, if a material containing Cr as a main component is used for the buffer film, the etching selectivity can be increased (10 or more). A material having Ta as a main metal element is usually a metal or an alloy. Further, those having an amorphous or microcrystalline structure are preferable from the viewpoint of smoothness and flatness. Materials containing Ta as a main metal element include materials containing Ta and B, materials containing Ta and N, materials containing Ta, B and O, materials containing Ta, B and N, and materials containing Ta and Si A material containing Ta, Si and N, a material containing Ta and Ge, a material containing Ta, Ge and N can be used. By adding B, Si, Ge or the like to Ta, an amorphous material can be easily obtained and the smoothness can be improved. In addition, when N or O is added to Ta, resistance to oxidation is improved, so that an effect of improving stability over time can be obtained.

Other absorber film materials include Cr-based materials (chromium, chromium nitride, etc.), tungsten-based materials (tungsten nitride, etc.), and titanium-based materials (titanium, titanium nitride). ) Etc. can be used.
These absorber films can be formed by a normal sputtering method.
The buffer film has a function of protecting the lower multilayer reflection film as an etching stop layer when forming a transfer pattern on the absorber film, and is usually formed between the multilayer reflection film and the absorber film. Is done. Note that the buffer film may be provided as necessary.
As the material of the buffer film, a material having a high etching selectivity with the absorber film is selected. The etching selectivity between the buffer film and the absorber film is 5 or more, preferably 10 or more, more preferably 20 or more. Furthermore, a material having low stress and excellent smoothness is preferable, and in particular, it has a smoothness of 0.3 nmRms or less. From such a viewpoint, it is preferable that the material for forming the buffer film has a microcrystalline or amorphous structure.

In general, Ta, Ta alloy, or the like is often used as a material for the absorber film. When a Ta-based material is used as the material of the absorber film, it is preferable to use a material containing Cr as the buffer film. For example, Cr alone or a material in which at least one element of nitrogen, oxygen, and carbon is added to Cr can be used. Specifically, chromium nitride (CrN) or the like is used.
On the other hand, when Cr alone or a material mainly containing Cr is used as the absorber film, the buffer film is made of a material mainly containing Ta, for example, a material containing Ta and B, or Ta and B. A material containing N and N can be used.
This buffer film may be removed in a pattern according to the pattern formed on the absorber film in order to prevent a reduction in the reflectance of the mask when the reflective mask is formed. If a large material can be used and the film thickness can be sufficiently reduced, the multilayer reflective film may be left without being removed in a pattern. The buffer film can be formed by, for example, a sputtering method such as DC sputtering, RF sputtering, or ion beam sputtering.

A reflective mask for exposure is obtained by forming a predetermined transfer pattern on the absorber film of the reflective mask blank obtained as described above.
The pattern formation on the absorber film can be formed using a lithography technique. Referring to FIG. 2, first, the reflective mask blanks obtained by forming the absorber film 4 on the multilayer reflective film 3 of the multilayer reflective film-coated substrate 10 (see FIG. 1B) according to the present invention. 20 (see FIG. 2A) is prepared. Next, a resist layer is provided on the absorber film 4 of the reflective mask blank 20, and a predetermined pattern 5 is formed by drawing and developing a pattern on the resist layer (see FIG. 2B). Examples of pattern drawing include drawing by an electron beam and drawing by exposure. Next, using the resist pattern 5 as a mask, a pattern 4a is formed on the absorber film 4 by a technique such as etching. For example, in the case of an absorber film containing Ta as a main component, dry etching containing chlorine gas can be applied.

Finally, the remaining resist pattern 5 is removed to obtain a reflective mask 30 on which a predetermined absorber film pattern 4a is formed as shown in FIG. In the above description, the aforementioned buffer layer is not provided. However, when a buffer film is provided between the absorber film 4 and the multilayer reflective film 3, the pattern 4a is formed on the absorber film 4. If necessary, the buffer film may be removed according to the absorber film pattern 4a to expose the multilayer reflective film.
According to the present invention, since the reflective mask blank is used as a reflective mask, a reflective mask free from pattern defects due to particles can be obtained.
Next, the embodiment of the present invention will be described more specifically with reference to examples.

As a substrate, a low-expansion SiO ₂ —TiO ₂ glass substrate having an outer shape of 6 inches square and a thickness of 6.3 mm was prepared. This glass substrate has a smooth surface of 0.12 nmRms and a flatness of 100 nm or less by mechanical polishing.
Next, this glass substrate was placed at a predetermined position of the holder 60 having the structure shown in FIGS. 5 to 7, and a conductive film was formed by sputtering using an in-line type sputtering apparatus. First, using a chromium target, a film thickness of 15 nm is obtained by reactive sputtering in a mixed gas atmosphere of argon (Ar) and nitrogen (N) (Ar: 72% by volume, N ₂ : 28% by volume, pressure 0.3 Pa). Next, by using a chromium target, reactive sputtering is performed in a mixed gas atmosphere of argon and methane (Ar: 96.5% by volume, CH ₄ : 3.5% by volume, pressure 0.3 Pa) using a chromium target. Then, a CrC film having a film thickness of 25 nm is formed, and finally a mixed gas atmosphere of argon and nitric oxide using a chromium target (Ar: 87.5 vol%, NO: 12.5 vol%, pressure 0.3 Pa) A 20 nm thick CrON film was formed by reactive sputtering. In the obtained CrN film, the nitrogen content was 20 at%, the carbon content in the CrC film was 6 at%, the oxygen content in the CrON film was 45 at%, and the nitrogen content was 25 at%.

As described above, a conductive film made of a laminated film having a three-layer structure of CrN / CrC / CrON was formed on the glass substrate from the substrate side. In this example, the conductive film was formed 10 mm from the side surface of the substrate (that is, W = 10 mm in FIG. 3B) using the holder.
Next, on the opposite side of the conductive film on the substrate on which the conductive film was formed, an alternate laminated film made of Mo and Si suitable as a reflective film in a region having an exposure wavelength of 13 to 14 nm was formed as a multilayer reflective film. The film forming method uses the ion beam sputtering apparatus having the structure shown in FIG. 4 described above, holds the conductive film-formed side of the substrate with the conductive film by an electrostatic chuck, and holds the conductive chuck by the electrostatic chuck. Sputter deposition was carried out while rotating the substrate with a conductive film vertically while facing the sputtering target surface for multilayer reflection film deposition. First, using a Si target, a Si film was formed to a thickness of 4.2 nm. After that, using a Mo target, a Mo film was formed to a thickness of 2.8 nm. Was deposited to 4 nm. The total film thickness is 284 nm.

As described above, the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured and found to be 0.05 / cm ^2. It can be seen that almost no occurrence occurred. The particles had a size of 0.15 μm or more, and were measured with a defect inspection apparatus (MAGICS M-1320 manufactured by Lasertec Corporation).
Next, a film containing Ta as a main component and containing B and N was formed as an absorber film for exposure light having a wavelength of 13 to 14 nm on the multilayer reflective film of the substrate with the multilayer reflective film obtained above. The film formation method was performed by DC magnetron sputtering using a target containing Ta and B, adding 10% nitrogen to Ar. The substrate was held by an electrostatic chuck, and the film was formed while rotating while facing the target surface. The thickness was set to 70 nm as a thickness that can sufficiently absorb the exposure light. The composition ratio of the formed TaBN film was 0.8 for Ta, 0.1 for B, and 0.1 for N.
As described above, the reflective mask blank of this example was obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was also measured in the same manner as described above. As a result, it was 0.1 / cm ² , and a reflective mask blank having almost no surface defects due to particles was obtained. I was able to.

Next, a pattern was formed on the absorber film using the reflective mask blanks, and a reflective mask having a pattern for 16 Gbit-DRAM having a design rule of 0.07 μm was produced.
First, an EB resist was coated on the reflective mask blanks, and a resist pattern was formed by EB drawing and development. Next, using this resist pattern as a mask, the TaBN film as the absorber film was dry-etched using chlorine to form an absorber film pattern.
As described above, the reflective mask of this example was obtained. When pattern defects were measured with the defect inspection apparatus, it was found that there were no pattern defects due to particles. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

In this example, a substrate with a multilayer reflective film was produced in the same manner as in Example 1 except that the conductive film formed on the substrate was a two-layered CrCN / CrON film. The CrON film was formed in the same manner as in Example 1, and the CrCN film was formed by using a chromium target and adjusting the gas flow rates of methane and nitrogen in a mixed gas atmosphere of argon, methane, and nitrogen. . The film thickness was 60 nm. The obtained CrCN film had a carbon content of 8 at% and a nitrogen content of 12 at%. Further, as in Example 1, a conductive film was formed 10 mm inside from the side surface of the substrate.
The number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured and found to be 1.0 / cm ² , and almost no particles were generated during the formation of the multilayer reflective film. It was.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was 1.5 / cm ² , and a reflective mask blank with extremely few surface defects due to particles could be obtained.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. . When pattern defects were measured for the obtained reflective mask, it was found that there were almost no pattern defects due to particles. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

In this example, the conductive film formed on the substrate is a laminated film of the same three-layer structure of CrN / CrC / CrON as in Example 1, and one whole surface including one main surface of the substrate and the chamfered surface and side surfaces of the substrate. A conductive film was formed. Except for this point, a substrate with a multilayer reflective film was produced in the same manner as in Example 1.
When the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured, it was 10 / cm ² , and there was little generation of particles during the formation of the multilayer reflective film. In this embodiment, although the conductive film is also formed on the chamfered surface and the side surface of the substrate, the conductive film formed by the laminated film has high adhesion to the substrate, so that generation of particles at the peripheral edge of the substrate is suppressed. I was able to.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was 13 / cm ² , and a reflective mask blank with reduced generation of surface defects due to particles could be obtained.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. . When pattern defects were measured for the obtained reflective mask, it was found that there were very few pattern defects due to particles that would be problematic. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

In this example, the conductive film formed on the substrate was a laminated film of the same three-layer structure of CrN / CrC / CrON as in Example 1, but the second CrC film was formed of argon and methane. Helium (He) gas was further added to the mixed gas. The content of helium gas contained in the mixed gas was 60% by volume, and the content of methane gas was 10% by volume. In addition, as in Example 3, a conductive film was formed on the entire surface of one surface including the main surface of the substrate and the chamfered surface and side surfaces of the substrate. Except for these points, a substrate with a multilayer reflective film was produced in the same manner as in Example 1. Note that it was confirmed by thermal desorption analysis that helium (He) was contained in the conductive film.
When the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured, it was 5 / cm ² , and the generation of particles during the formation of the multilayer reflective film was very small. In this embodiment, although the conductive film is formed on the chamfered surface and the side surface of the substrate, the conductive film formed by the laminated film has a high adhesion to the substrate, and the conductive film contains helium so that the electrostatic chuck Since the adhesion with the substrate can be further increased, the generation of particles at the peripheral edge of the substrate can be suppressed.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was 7 / cm ² , and it was possible to obtain a reflective mask blank in which generation of surface defects due to particles was suppressed.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. . The obtained reflective mask was measured for pattern defects. As a result, it was found that there were almost no pattern defects due to particles that would be problematic. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

In this example, a substrate with a multilayer reflective film was produced in the same manner as in Example 1 except that the conductive film formed on the substrate was CrN. The CrN film was formed by using a chromium target and adjusting the nitrogen gas flow rate in a mixed gas atmosphere of argon and nitrogen. The film thickness was 45 nm. The content of nitrogen in the obtained CrN film was 40 at%. Further, as in Example 1, a conductive film was formed 10 mm inside from the side surface of the substrate.
When the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured, it was 0.03 particles / cm ² , and the generation of particles during the formation of the multilayer reflective film hardly occurred. It was.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was 0.07 / cm ² , and a reflective mask blank with very few surface defects due to particles could be obtained.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. . When pattern defects were measured for the obtained reflective mask, it was found that there were almost no pattern defects due to particles. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

In this example, a substrate with a multilayer reflective film was produced in the same manner as in Example 1 except that the conductive film formed on the substrate was TaN. The TaN film was formed by using a tantalum target and adjusting the nitrogen gas flow rate in a mixed gas atmosphere of argon and nitrogen. The film thickness was 50 nm. The content of nitrogen in the obtained TaN film was 20 at%. Further, as in Example 1, a conductive film was formed 10 mm inside from the side surface of the substrate.
When the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this example was measured, it was 0.03 particles / cm ² , and the generation of particles during the formation of the multilayer reflective film hardly occurred. It was.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this example was 0.1 / cm ² , and a reflective mask blank with extremely few surface defects due to particles could be obtained.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. . When pattern defects were measured for the obtained reflective mask, it was found that there were almost no pattern defects due to particles. Further, when a pattern was transferred onto a semiconductor substrate using this reflective mask, a good transfer image was obtained.

Next, the comparative example with respect to the said Example is given.
(Comparative example)
In this comparative example, the conductive film formed on the substrate is a single layer of CrON film. The CrON film was formed in the same manner as in Example 1, and the film thickness was 60 nm. In addition, as in Example 3, a conductive film was formed on the entire surface of one surface including the main surface of the substrate and the chamfered surface and side surfaces of the substrate. Except for these points, a substrate with a multilayer reflective film was produced in the same manner as in Example 1.
When the number of particles on the surface of the multilayer reflective film of the obtained substrate with the multilayer reflective film of this comparative example was measured, it was 100 / cm ² , and the generation of particles during the formation of the multilayer reflective film is very large. all right. This is because the CrON film has weak adhesion to the glass substrate and also has a conductive film formed on the chamfered surface and the side surface of the substrate. This is considered to be due to the large number of particles.
Next, on the multilayer reflective film of the substrate with the multilayer reflective film obtained above, a TaBN film is formed as an absorber film for exposure light having a wavelength of 13 to 14 nm as in Example 1, and a reflective mask blank is formed. Obtained. The number of particles on the surface of the absorber film of the reflective mask blank of this comparative example was 113 / cm ² , and there were very many surface defects due to particles.
Next, using the above-described reflective mask blanks, a pattern was formed on the absorber film in the same manner as in Example 1, and a reflective mask having a 16 Gbit-DRAM pattern with a design rule of 0.07 μm was produced. However, when pattern defects were measured for the obtained reflective mask, there were very many pattern defects due to particles.
In addition, although only the material containing chromium (Cr) was mentioned as a specific example of the electrically conductive film material of the above-mentioned Embodiment 1, besides this, tantalum (Ta), molybdenum (Mo), silicon (Si), titanium A material containing (Ti), tungsten (W), indium (In), and tin (Sn) may be used.

It is sectional drawing which shows the manufacturing process of the board | substrate with a multilayer reflective film of this invention. It is sectional drawing which shows the manufacturing process of the reflective mask blank for exposure using the board | substrate with a multilayer reflective film of this invention, and the reflective mask for exposure. It is sectional drawing of the state in which the conventional electrically conductive film was formed. It is sectional drawing of the state in which the electrically conductive film by one embodiment of this invention was formed. It is a schematic block diagram of an ion beam sputtering apparatus. It is a top view which shows the structure of the board | substrate holder used at the time of electrically conductive film film-forming. It is an expansion perspective view of the A section of FIG. It is the VII-VII sectional view taken on the line of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Conductive film 3 Multilayer reflective film 4 Absorber film 5 Resist pattern 10 Multilayer reflective film-coated substrate 20 Exposure reflective mask blank 30 Exposure reflective mask 40 Ion beam sputtering apparatus 50 Electrostatic chuck 60 Substrate holder

Claims (12)

  A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, wherein a conductive film is provided on a side opposite to the multilayer reflective film across the substrate in a region excluding at least a peripheral portion of the substrate. A substrate with a multilayer reflective film, which is formed.   A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, wherein a conductive film is formed on the opposite side of the multilayer reflective film across the substrate, and the surface of the conductive film is substantially A substrate with a multilayer reflective film, characterized by being a metal nitride film that does not contain oxygen (O).   3. The substrate with a multilayer reflective film according to claim 2, wherein the conductive film is a metal nitride film.   A substrate with a multilayer reflective film having a multilayer reflective film that reflects exposure light on the substrate, wherein a conductive film made of a material containing a metal is formed on the opposite side of the multilayer reflective film across the substrate, The material for forming the conductive film has a different composition in the film thickness direction of the conductive film. The conductive film contains nitrogen (N) on the substrate side, and oxygen ( A substrate with a multilayer reflective film, comprising at least one of O) and carbon (C).   The substrate is a glass substrate, and the metal is at least one material selected from chromium (Cr), tantalum (Ta), molybdenum (Mo), and silicon (Si). 5. A substrate with a multilayer reflective film as described in any one of 1 to 4.   6. The substrate with a multilayer reflective film according to claim 1, wherein the conductive film contains helium (He).   7. A reflective mask blank for exposure, wherein at least an absorber film for absorbing exposure light is formed on the multilayer reflective film in the substrate with a multilayer reflective film according to claim 1.   8. The reflective mask for exposure according to claim 7, wherein an absorber film pattern serving as a transfer pattern is formed on the absorber film in the reflective mask blank.   Preparing a substrate with a conductive film in which a conductive film is formed in a region excluding at least a peripheral portion of the substrate on the substrate, and holding the conductive film-formed side of the substrate with the conductive film by an electrostatic chuck. And a step of forming a multilayer reflective film that reflects exposure light on the opposite side of the conductive film across the substrate, and a method for producing a substrate with a multilayer reflective film.   10. The multilayer reflective film is formed by sputtering while rotating the substrate with a conductive film held by an electrostatic chuck while facing the sputtering target surface for forming the multilayer reflective film. The manufacturing method of the board | substrate with a multilayer reflective film of description.   It has the process of forming the absorber film which absorbs exposure light on the multilayer reflective film of the substrate with a multilayer reflective film obtained by the manufacturing method of the substrate with a multilayer reflective film according to claim 9 or 10. Of manufacturing a reflective mask blank for exposure.   An absorber film pattern serving as a transfer pattern is formed on the absorber film of the reflective mask blank obtained by the method for producing a reflective mask blank for exposure according to claim 11. Production method.

Images