JP2002280613A - Method and member for manufacturing illuminating device - Google Patents
Method and member for manufacturing illuminating deviceInfo
- Publication number
- JP2002280613A JP2002280613A JP2001078144A JP2001078144A JP2002280613A JP 2002280613 A JP2002280613 A JP 2002280613A JP 2001078144 A JP2001078144 A JP 2001078144A JP 2001078144 A JP2001078144 A JP 2001078144A JP 2002280613 A JP2002280613 A JP 2002280613A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- substrate
- phosphor
- emitting diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオードを
用いた照明装置の製造方法及びその製造部材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a lighting device using a light emitting diode and a member for manufacturing the same.
【０００２】[0002]
【従来の技術】高効率の青色・白色発光ダイオードの登
場により、発光ダイオードを使った照明は、従来の白熱
電球やハロゲン電球に比べて、高効率・高寿命が期待さ
れることから、電球代替光源として提案されている。発
光ダイオードのベアチップは、０．５ｍｍ以下と極めて
小さいが、通常、直径３ｍｍ程度の砲弾型の樹脂パッケ
ージに封止されたものや、３ｍｍ×１．５ｍｍ×１．５
ｍｍ程度の直方体状の樹脂パッケージに封止されている
ものが市販されている。2. Description of the Related Art With the advent of high-efficiency blue and white light-emitting diodes, lighting using light-emitting diodes is expected to have higher efficiency and longer life than conventional incandescent and halogen lamps. It has been proposed as a light source. The bare chip of a light emitting diode is extremely small, 0.5 mm or less, but is usually sealed in a shell-shaped resin package having a diameter of about 3 mm, or 3 mm × 1.5 mm × 1.5.
A package sealed in a rectangular resin package of about mm is commercially available.
【０００３】砲弾型樹脂パッケージの白色発光ダイオー
ドの組立工程例を、図１０を用いて説明する。 (ａ)検査で合格した青色発光ダイオードのベアチップ
を、真空ピンセットで一つずつ拾い上げ、銀ペーストを
塗布したマウントリードのチップボンディング部に実装
する。 (ｂ)ベーキングにより銀ペーストを加熱・硬化し、ベア
チップを固定する。 (ｃ)ベアチップの電極とインナーリードとマウントリー
ドを、ワイヤーボンディングで接続する。 (ｄ)ＹＡＧ蛍光体を塗布乾燥する。 (ｅ)樹脂でモールドする。なお、通常の青色や赤色の発
光ダイオードは、蛍光体の塗布は行わない。An example of an assembling process of a white light emitting diode of a shell type resin package will be described with reference to FIG. (a) The blue light emitting diode bare chips that have passed the inspection are picked up one by one with vacuum tweezers and mounted on the chip bonding portion of the mount lead coated with silver paste. (b) The silver paste is heated and cured by baking to fix the bare chips. (c) The electrodes of the bare chip, the inner leads and the mount leads are connected by wire bonding. (d) Apply and dry the YAG phosphor. (e) Mold with resin. The usual blue or red light emitting diodes do not have a phosphor applied.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、発光ダ
イオードの発光効率は、電球と同等以上であるが、１個
あたりの光束は数ｌｍと電球に比べて２桁以上低いた
め、同等の光束を得るためには、数百もの多数の発光ダ
イオードを高密度で実装する必要がある。従って、従来
のように個々の発光ダイオードのベアチップを一つ一つ
組み立てる方法では、多数の発光ダイオードを高密度実
装することは困難である。However, the luminous efficiency of the light emitting diode is equal to or higher than that of a light bulb, but the luminous flux per light is several lm, which is at least two orders of magnitude lower than that of a light bulb. Therefore, it is necessary to mount hundreds of light emitting diodes at a high density. Therefore, it is difficult to mount a large number of light emitting diodes at a high density by the conventional method of assembling individual light emitting diode bare chips one by one.
【０００５】そのため、本発明は、一度に多数の発光ダ
イオードを基板上に転写実装した照明装置の製造方法及
び製造部材を提供するものである。Therefore, the present invention provides a manufacturing method and a manufacturing member of a lighting device in which a large number of light emitting diodes are transferred and mounted on a substrate at one time.
【０００６】[0006]
【課題を解決するための手段】前記課題を解決するた
め、本発明の発光ダイオードを用いた照明装置の製造方
法は、粘着体または帯電体の上に配置された複数の発光
ダイオードを、配線パターンを有する基板上に転写する
工程を含むことを特徴とする。In order to solve the above-mentioned problems, a method of manufacturing a lighting device using a light-emitting diode according to the present invention comprises the steps of: A step of transferring onto a substrate having
【０００７】配線パターンに応じて、前記粘着体上また
は帯電体上に多数の発光ダイオードを配置し、これを基
板上に転写することにより、一度に多数の発光ダイオー
ドを基板上に転写実装することが可能となる。[0007] A large number of light-emitting diodes are arranged on the adhesive or charged body according to the wiring pattern and are transferred onto the substrate, so that a large number of light-emitting diodes are transferred and mounted on the substrate at one time. Becomes possible.
【０００８】また、本発明の製造方法においては、前記
粘着体または帯電体が転写ロールであり、前記転写ロー
ル上に配置された発光ダイオードを、配線パターンを有
する基板上に順次転写することを特徴とする。Further, in the manufacturing method of the present invention, the adhesive or the charged body is a transfer roll, and the light emitting diodes arranged on the transfer roll are sequentially transferred onto a substrate having a wiring pattern. And
【０００９】本方法により、一列ずつ連続的に、発光ダ
イオードを実装することが可能となる。According to the present method, it is possible to mount the light emitting diodes continuously one by one.
【００１０】また、本発明の製造方法においては、前記
粘着体または帯電体が、配線パターンを有する基板の配
置に応じて、前記粘着体または帯電体の表面に複数の凸
部を有し、前記凸部上に配置された発光ダイオードを、
配線パターンを有する基板上に転写することを特徴とす
る。Further, in the manufacturing method of the present invention, the adhesive or the charged body has a plurality of convex portions on the surface of the adhesive or the charged body according to the arrangement of the substrate having the wiring pattern. Light emitting diode arranged on the convex part,
The transfer is performed on a substrate having a wiring pattern.
【００１１】粘着体または帯電体の表面に凸部を設ける
ことにより、すなわち粘着体または帯電体の表面を凹凸
構造とすることにより、基板の凹凸に応じて、発光ダイ
オード若しくは蛍光体を転写することが可能となる。The light emitting diode or the phosphor is transferred according to the unevenness of the substrate by providing a convex portion on the surface of the adhesive or the charged body, that is, by forming the surface of the adhesive or the charged body into an uneven structure. Becomes possible.
【００１２】また、本発明の製造方法においては、請求
項１〜３のいずれかに記載の方法によって、発光ダイオ
ードを配線パターンを有する基板上の所定の位置に実装
し、前記発光ダイオードの幅より大きい複数の貫通孔を
有する薄板を、前記貫通孔が配線パターンを有する基板
上に実装された発光ダイオードと一致するように重ね合
せた後、蛍光体ペーストを前記貫通孔に埋め込み、前記
貫通孔からはみ出した前記蛍光体ペーストを除去するこ
とによって前記発光ダイオードに蛍光体層を形成するこ
とを特徴とする。Further, in the manufacturing method of the present invention, the light emitting diode is mounted at a predetermined position on a substrate having a wiring pattern by the method according to any one of claims 1 to 3, and the width of the light emitting diode is determined by the width of the light emitting diode. After laminating a thin plate having a plurality of large through-holes such that the through-holes coincide with light-emitting diodes mounted on a substrate having a wiring pattern, a phosphor paste is embedded in the through-holes. A phosphor layer is formed on the light emitting diode by removing the protruding phosphor paste.
【００１３】本方法により、貫通孔を有する薄板の厚さ
から発光ダイオードのチップ厚を差し引いた同じ厚みの
蛍光体を、発光ダイオード上に塗布することが可能とな
り、容易に所定の厚さの蛍光体を塗布することが出来
る。According to the present method, it is possible to apply a phosphor having the same thickness as the thickness of a thin plate having a through hole minus the chip thickness of a light emitting diode onto a light emitting diode, and to easily apply a fluorescent material having a predetermined thickness. Body can be applied.
【００１４】また、本発明の製造方法においては、請求
項１〜３、好ましくは請求項３に記載の方法によって、
発光ダイオードを実装するための複数の凹部を有するフ
レキシブル基板の前記凹部に前記発光ダイオードを実装
した後、前記凹部に蛍光体ペーストを埋め込み、前記凹
部からはみ出した前記蛍光体ペーストを除去することに
よって前記発光ダイオードに蛍光体層を形成することを
特徴とする。[0014] In the production method of the present invention, the method described in claims 1 to 3 and preferably in claim 3 provides
After mounting the light emitting diode in the concave portion of the flexible substrate having a plurality of concave portions for mounting the light emitting diode, the phosphor paste is embedded in the concave portion, and the phosphor paste protruding from the concave portion is removed. It is characterized in that a phosphor layer is formed on the light emitting diode.
【００１５】本方法により、窪みの深さと発光ダイオー
ドの厚さの差に相当する厚みの蛍光体を、発光ダイオー
ド上に塗布することが可能となり、容易に所定の厚さの
蛍光体を塗布することが出来る。According to this method, a phosphor having a thickness corresponding to the difference between the depth of the depression and the thickness of the light emitting diode can be applied on the light emitting diode, and the phosphor having a predetermined thickness can be easily applied. I can do it.
【００１６】また、本発明の製造方法においては、前記
粘着体または帯電体の上に配置された蛍光体を、配線パ
ターンを有する基板上に配置された発光ダイオードを覆
うように転写し、前記発光ダイオードに蛍光体層を形成
することを特徴とする。Further, in the manufacturing method of the present invention, the phosphor arranged on the adhesive or the charged body is transferred so as to cover a light emitting diode arranged on a substrate having a wiring pattern. It is characterized in that a phosphor layer is formed on the diode.
【００１７】発光ダイオードの配置に応じて、蛍光体を
粘着体上に配置することにより、一度に多数の蛍光体を
発光ダイオード上に転写実装することが可能となる。粘
着体または帯電体の表面は、基板の凹凸に応じて蛍光体
を転写するため、凹凸構造であることが好ましい。By arranging the phosphors on the adhesive in accordance with the arrangement of the light emitting diodes, it becomes possible to transfer and mount a large number of phosphors on the light emitting diodes at once. The surface of the adhesive or charged body preferably has an uneven structure in order to transfer the fluorescent substance according to the unevenness of the substrate.
【００１８】また、本発明の製造方法においては、前記
基板上における発光ダイオードの実装個数が、１平方セ
ンチメートルあたり１個〜１００個であることが好まし
い。In the manufacturing method of the present invention, the number of light emitting diodes mounted on the substrate is preferably 1 to 100 per 1 cm 2.
【００１９】また、本発明の製造部材は、発光ダイオー
ドを用いた照明装置を製造するための部材であって、そ
の表面に発光ダイオードを配置するための複数の凸部を
有する粘着性または帯電性のシート又はロールであるこ
とを特徴とする。The manufacturing member according to the present invention is a member for manufacturing a lighting device using a light emitting diode, and has a plurality of convex portions for arranging the light emitting diode on its surface. Or a sheet or roll.
【００２０】また、本発明の製造部材は、発光ダイオー
ドを用いた照明装置を製造するための部材であって、発
光ダイオードを実装するための複数の凹部を有するフレ
キシブル基板であることを特徴とする。The manufacturing member of the present invention is a member for manufacturing a lighting device using a light emitting diode, and is a flexible substrate having a plurality of recesses for mounting the light emitting diode. .
【００２１】[0021]
【発明の実施の形態】以下、本発明の実施形態につい
て、図面を用いて説明する。 （実施の形態１）第1の実施形態である、発光ダイオー
ドを用いた照明装置の製造方法について説明する。図1
に本発明の製造方法で作製したユニットの外観図、図２
に組図、図３にその断面図を示す。実装基板である、柔
軟性を持つポリイミド樹脂３上に配線パターン４が形成
された厚さ０．３ｍｍの多層フレキシブル基板１に、青
色発光ダイオードのベアチップ５が、1ｃｍ2あたり９個
ずつの高密度で実装され、チップ実装面側が柔軟性のあ
る透光性の厚さ２．５ｍｍのシリコーンゴムシート２で
覆われている。フレキシブル基板とシリコーンゴムシー
トの厚みの合計も３ｍｍ程度と非常に薄く、柔軟性を持
っている。1ユニット５×１０ｃｍの大きさで、４５０
個の発光ダイオードが実装されている。尚、発光ダイオ
ードは、基板上に設けられたダイボンドパッドに接触す
るように配置する。Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) A method of manufacturing a lighting device using a light emitting diode according to a first embodiment will be described. Figure 1
FIG. 2 is an external view of a unit manufactured by the manufacturing method of the present invention, and FIG.
FIG. 3 shows a sectional view and FIG. On a 0.3 mm-thick multilayer flexible substrate 1 in which a wiring pattern 4 is formed on a flexible polyimide resin 3 which is a mounting substrate, a high density of 9 bare chips 5 of blue light emitting diode per cm 2 is provided. And the chip mounting surface side is covered with a flexible, light-transmitting silicone rubber sheet 2 having a thickness of 2.5 mm. The total thickness of the flexible substrate and the silicone rubber sheet is also very thin, about 3 mm, and has flexibility. One unit is 5 × 10cm and 450
Light emitting diodes are mounted. The light emitting diode is arranged so as to contact a die bond pad provided on the substrate.
【００２２】発光ダイオードは図４にその断面図を示す
ように、サファイア基板７上に窒化物系化合物半導体Ｉ
ｎＧａＡｌＮ（８と９）が積層された青色発光ダイオー
ドを用いている。Ｐ型窒化物系化合物半導体９と、Ｎ型
窒化物系化合物半導体８で挟まれた活性層１０で電子と
正孔が再結合する際に青色光が発生する。発光ダイオー
ドは、積層側にＰ型側にアノード電極１１、Ｎ型側にカ
ソード電極が配置されており、フレキシブル基板にフリ
ップチップの状態で実装してある。As shown in the sectional view of FIG. 4, the light emitting diode has a nitride compound semiconductor I on a sapphire substrate 7.
A blue light emitting diode in which nGaAlN (8 and 9) is laminated is used. Blue light is generated when electrons and holes recombine in the active layer 10 sandwiched between the P-type nitride-based compound semiconductor 9 and the N-type nitride-based compound semiconductor 8. The light-emitting diode has an anode electrode 11 on the P-type side on the lamination side and a cathode electrode on the N-type side, and is mounted on a flexible substrate in a flip chip state.
【００２３】サファイア基板７は、青色光に対して透明
であるため、透過した青色光によりサファイア基板７に
塗布されたＹＡＧ（イットリウム・アルミニウム・ガー
ネット）蛍光体６が励起され、黄色光を発する。青色光
と黄色光の混合により、白色光が得られる。Since the sapphire substrate 7 is transparent to blue light, the transmitted blue light excites the YAG (yttrium aluminum garnet) phosphor 6 applied to the sapphire substrate 7 and emits yellow light. White light is obtained by mixing blue and yellow light.
【００２４】1ユニット５×１０ｃｍのフレキシブル基
板上に、発光ダイオードのベアチップを４５０個実装す
る際、従来のように一つずつ実装すると、４５０倍の実
装時間を要する。また、一個ずつ加熱して固定すると、
フレキシブル基板上の配線パターンの酸化などの原因に
もなり悪影響を与えることになる。When mounting 450 bare chips of light emitting diodes on a flexible board of 5 × 10 cm per unit, if mounting one by one as in the prior art, it takes 450 times longer mounting time. Also, when heating and fixing one by one,
This may cause oxidization of the wiring pattern on the flexible substrate and adversely affect the wiring pattern.
【００２５】本発明の製造方法においては、図５(ａ)に
示すように、検査を終えた発光ダイオードを、フレキシ
ブル基板への実装配置に合わせて粘着シート上に並べ、
フレキシブル基板上に転写することにより、ユニット単
位で発光ダイオードを一度にフレキシブル基板に実装す
ることが可能となる。転写する方法として、図５(ｂ)に
示すように、発光ダイオードベアチップ５とフレキシブ
ル基板１を合わせた状態で加熱することにより、はんだ
１３でフレキシブル基板１側にベアチップ５を固定する
ことが可能になる。In the manufacturing method of the present invention, as shown in FIG. 5 (a), the light-emitting diodes which have been inspected are arranged on an adhesive sheet according to the mounting arrangement on a flexible substrate.
By transferring the light-emitting diodes onto the flexible substrate, the light-emitting diodes can be mounted on the flexible substrate at one time in units. As a method of transferring, as shown in FIG. 5B, by heating the light emitting diode bare chip 5 and the flexible substrate 1 together, the bare chip 5 can be fixed to the flexible substrate 1 side by the solder 13. Become.
【００２６】加熱はフレキシブル基板の裏面側全面或い
は粘着シートの裏面側全面から、ヒーターにより加熱し
たり、炉を通過させる方法がある。As the heating, there is a method in which the entire surface on the back side of the flexible substrate or the entire surface on the back side of the adhesive sheet is heated by a heater or passed through a furnace.
【００２７】また、はんだの代わりに、金バンプを用い
て、超音波振動により固定する方法もある。There is also a method of fixing by ultrasonic vibration using gold bumps instead of solder.
【００２８】また、粘着シートの代わりに、帯電させた
シート上に発光ダイオードを静電気力により張り付ける
方法でもよい。In place of the adhesive sheet, a method may be used in which light emitting diodes are attached to a charged sheet by electrostatic force.
【００２９】（実施の形態２）また、ユニット単位で一
度に実装する以外の方法として、第２の実施形態とし
て、図６に示すように、粘着性又は帯電性の転写ロール
１５上に、実装配置に合わせて一列ずつ発光ダイオード
５を並べ、転写ロールを回転させながら、順次一列ずつ
フレキシブル基板１に転写する方法がある。発光ダイオ
ード５をフレキシブル基板１への固定させる方法は、第
1の実施形態と同様であり、はんだや金バンプにより固
定する。(Embodiment 2) As a method other than mounting at a time in units, as a second embodiment, as shown in FIG. 6, mounting on an adhesive or charging transfer roll 15 is performed. There is a method of arranging the light emitting diodes 5 line by line in accordance with the arrangement, and sequentially transferring the light emitting diodes 5 to the flexible substrate 1 line by line while rotating the transfer roll. The method for fixing the light emitting diode 5 to the flexible substrate 1 is described in
This is the same as in the first embodiment, and is fixed with solder or gold bumps.
【００３０】（実施の形態３）次に、第３の実施形態で
ある、発光ダイオード上に所定の厚みの蛍光体層を形成
する方法を説明する。図７(ａ)に示すように、発光ダイ
オード５を実装したフレキシブル基板１に、発光ダイオ
ード５（０．３ｍｍ角）よりも一回り大きい０．５ｍｍ
角の貫通孔１７を発光ダイオードの配置に合わせて開け
た厚さ０．３３ｍｍの金属板１８を、貫通孔１７と発光
ダイオードが一致するように重ね合わせた後、図７(ｂ)
のように、蛍光体ぺースト２０をスキージ１９により貫
通孔１７に埋め込み、１００〜１５０℃で１０〜２０分
間べ一キングすることにより、発光ダイオード上に厚さ
の揃った蛍光体層を形成することができる。 この場
合、厚さ０．０３ｍｍの蛍光体層を塗布することができ
る。(Embodiment 3) Next, a method of forming a phosphor layer having a predetermined thickness on a light emitting diode according to a third embodiment will be described. As shown in FIG. 7A, the flexible substrate 1 on which the light-emitting diode 5 is mounted has a size of 0.5 mm larger than the light-emitting diode 5 (0.3 mm square).
After a 0.33 mm-thick metal plate 18 in which the corner through holes 17 are opened in accordance with the arrangement of the light emitting diodes is overlapped so that the through holes 17 and the light emitting diodes coincide with each other, FIG.
The phosphor paste 20 is buried in the through hole 17 by the squeegee 19 and baked at 100 to 150 ° C. for 10 to 20 minutes to form a phosphor layer having a uniform thickness on the light emitting diode. be able to. In this case, a phosphor layer having a thickness of 0.03 mm can be applied.
【００３１】貫通孔は、薄板１ｃｍ2あたり１〜１００
個設けることが好ましく、その大きさは、一般に、発光
ダイオードよりも０．３ｍｍ程度大きいことが好まし
い。貫通孔を設ける薄板としては、金属板などが一般に
用いられるが、セラミック板、ベーク板等でもよい。The number of through holes is 1 to 100 per cm 2 of a thin plate.
It is preferable to provide a plurality of the light emitting diodes, and the size thereof is generally preferably about 0.3 mm larger than that of the light emitting diode. As a thin plate provided with a through hole, a metal plate or the like is generally used, but a ceramic plate, a bake plate or the like may be used.
【００３２】蛍光体の種類は、特に制限されるものでは
なく、従来公知のものを適宜使用することができる。そ
の例としては、例えば、（Ｙ,Ｓｍ）3（Ａｌ,Ｇａ）5Ｏ
12：Ｃｅ、（Ｇｄ,Ｓｍ）3（Ａｌ,Ｇａ）5Ｏ12：Ｃｅ等
が挙げられ、なかでも、（Ｙ,Ｓｍ）3（Ａｌ,Ｇａ）5Ｏ
12：Ｃｅが好ましい。蛍光体層の厚みは、発光ダイオー
ドの種類によっても異なり、特に限定されないが、一般
に、０．０２〜０．０５ｍｍである。The kind of the phosphor is not particularly limited, and a conventionally known one can be appropriately used. For example, for example, (Y, Sm) 3 (Al, Ga) 5 O
12 : Ce, (Gd, Sm) 3 (Al, Ga) 5 O 12 : Ce, etc., among which (Y, Sm) 3 (Al, Ga) 5 O
12 : Ce is preferred. The thickness of the phosphor layer varies depending on the type of the light emitting diode and is not particularly limited, but is generally 0.02 to 0.05 mm.
【００３３】（実施の形態４）また、第４の実施形態で
ある、発光ダイオード上に、所定の厚みの蛍光体層を形
成する方法を説明する。図８(ａ)に示すように、発光ダ
イオード５の厚みよりも深い窪み（凹部）２１に発光ダ
イオード５が実装されたフレキシブル基板１に、図８
(ｂ)のように、蛍光体ぺースト２０をスキージ１９によ
り窪みに埋め込み、べ一キングすることにより、図８
(ｃ)のように、発光ダイオード５上に厚さの揃った蛍光
体層を形成することができる。窪みの深さを０．３３ｍ
ｍとすると、厚さ０．０３ｍｍの蛍光体層を塗布するこ
とができる。(Embodiment 4) A method of forming a phosphor layer having a predetermined thickness on a light emitting diode according to a fourth embodiment will be described. As shown in FIG. 8A, the flexible substrate 1 in which the light emitting diode 5 is mounted in a recess (recess) 21 deeper than the thickness of the light emitting diode 5 is provided.
As shown in FIG. 8 (b), the phosphor paste 20 is buried in the depression by the squeegee 19 and baked to obtain the structure shown in FIG.
As shown in (c), a phosphor layer having a uniform thickness can be formed on the light emitting diode 5. The depth of the depression is 0.33m
When m, a phosphor layer having a thickness of 0.03 mm can be applied.
【００３４】蛍光体の種類や蛍光体層の厚みは、上記実
施の形態３と同様である。また、凹部の大きさは、一般
に、底面の縦が０．５〜１．０ｍｍ、横が０．５〜１．
０ｍｍであり、深さは、０．３〜０．５ｍｍが好まし
い。The type of the phosphor and the thickness of the phosphor layer are the same as in the third embodiment. The size of the concave portion is generally 0.5 to 1.0 mm in length at the bottom and 0.5 to 1.0 mm in width.
0 mm and the depth is preferably 0.3 to 0.5 mm.
【００３５】上記方法では、窪みに予め発光ダイオード
を配置しておく必要があるが、その場合、窪みに発光ダ
イオードを転写するには、図９に示すように、粘着シー
ト１４や転写ロールの発光ダイオードの保持部を凸型に
することにより、転写が容易となる。シートやロールに
設ける凸部の大きさは、発光ダイオードの保持部におい
て、縦が０．２〜０．５ｍｍ、横が０．２〜０．５ｍｍ
であり、シート又はロール１ｃｍ2あたり、１〜１００
個設けることが好ましい。また、凸部の高さは、０．１
〜１．０ｍｍが好ましく、特に好ましくは０．２〜０．
３ｍｍである。In the above method, it is necessary to previously arrange the light emitting diodes in the depressions. In this case, the light emitting diodes are transferred to the depressions as shown in FIG. The transfer is facilitated by making the holding portion of the diode convex. The size of the convex portion provided on the sheet or roll is 0.2 to 0.5 mm in length and 0.2 to 0.5 mm in width in the holding portion of the light emitting diode.
And 1 to 100 per cm 2 of sheet or roll.
It is preferable to provide one. The height of the projection is 0.1
To 1.0 mm, particularly preferably 0.2 to 0.1 mm.
3 mm.
【００３６】本発明の製造方法においては、蛍光体層を
発光ダイオード上に形成する方法としては、発光ダイオ
ードと同様に、第１の実施形態または第２の実施形態で
示したような転写方法にても形成することは可能であ
る。In the manufacturing method of the present invention, the method for forming the phosphor layer on the light emitting diode is, like the light emitting diode, a transfer method as described in the first embodiment or the second embodiment. It is also possible to form them.
【００３７】本発明において用いる粘着性または帯電性
のシートまたはロールの材質や大きさは、特に制限され
ず、従来公知のものを適宜使用することができるが、例
えば、シリコーン系樹脂、ウレタン系樹脂、スチレン系
樹脂等が挙げられる。The material and size of the adhesive or chargeable sheet or roll used in the present invention are not particularly limited, and conventionally known ones can be appropriately used. For example, silicone-based resins and urethane-based resins can be used. And styrene resins.
【００３８】また、本発明において用いるフレキシブル
基板の材質や大きさは、特に制限されず、従来公知のも
のを適宜使用することができるが、例えば、ポリイミド
系樹脂、テトラフルオロエチレン系樹脂、エポキシ系樹
脂、カーボングラファイト等の基板が挙げられる。The material and size of the flexible substrate used in the present invention are not particularly limited, and conventionally known flexible substrates can be used as appropriate. For example, polyimide-based resins, tetrafluoroethylene-based resins, and epoxy-based resins can be used. Substrates such as resin and carbon graphite can be used.
【００３９】本実施形態には、変形する基板の例として
フレキシブル基板を用いた例を示したが、本発明におい
ては、ガラスエポキシ基板のように変形しない基板にお
いても同様の効果が得られる。In this embodiment, an example in which a flexible substrate is used as an example of a deformable substrate has been described. However, in the present invention, a similar effect can be obtained with a substrate that does not deform, such as a glass epoxy substrate.
【００４０】[0040]
【発明の効果】以上説明した通り、本発明の発光ダイオ
ードを用いた照明装置の製造方法によれば、多数の発光
ダイオードを実装基板に一度に転写することドより、実
装時間を大幅に短縮することが可能となる。また、実装
基板への加熱サイクルも大幅に減らすことが出来るの
で、基板上の電極の酸化も極力抑えられる。よって、そ
の工業的価値は大である。As described above, according to the method of manufacturing a lighting device using light emitting diodes of the present invention, the mounting time is greatly reduced compared to the case where a large number of light emitting diodes are transferred to the mounting substrate at one time. It becomes possible. In addition, since the number of heating cycles for the mounting substrate can be greatly reduced, oxidation of the electrodes on the substrate can be suppressed as much as possible. Therefore, its industrial value is great.
【図１】本発明の製造方法で作製したユニット外観図で
ある。FIG. 1 is an external view of a unit manufactured by a manufacturing method of the present invention.
【図２】本発明の製造方法で作製したユニット組図であ
る。FIG. 2 is a unit assembly diagram manufactured by the manufacturing method of the present invention.
【図３】本発明の製造方法で作製したユニット断面図で
ある。FIG. 3 is a sectional view of a unit manufactured by the manufacturing method of the present invention.
【図４】発光ダイオードペアチップを説明する図であ
る。FIG. 4 is a diagram illustrating a light emitting diode pair chip.
【図５】発光ダイオードベアチップとその実装例を説明
する図である。FIG. 5 is a diagram illustrating a light emitting diode bare chip and a mounting example thereof.
【図６】本発明の製造方法を説明する図である。FIG. 6 is a diagram illustrating a manufacturing method of the present invention.
【図７】本発明の製造方法を説明する図である。FIG. 7 is a diagram illustrating a manufacturing method of the present invention.
【図８】本発明の製造方法を説明する図である。FIG. 8 is a diagram illustrating a manufacturing method of the present invention.
【図９】本発明の製造部材を説明する図である。FIG. 9 is a diagram illustrating a production member of the present invention.
【図１０】従来の製造方法を説明する図である。FIG. 10 is a diagram illustrating a conventional manufacturing method.
【符号の説明】 １ フレキシブル基板 ２ シリコーンゴムシート ３ ポリイミド層 ４ 配線パターン ５ 発光ダイオードベアチップ ６ 蛍光体 ７ サファイア基板 ８ Ｎ型半導体 ９ Ｐ型半導体 １０ 活性層 １１ アノード電極 １２ カソード電極 １３ はんだ １４ 粘着シート １５ 転写ロール １６ ヒーター １７ 貫通孔 １８ 薄板 １９ スキージ ２０ 蛍光体ペースト ２１ 発光ダイオードと蛍光体を埋め込むための窪み
（凹部） ２２ 粘着シートに設けた発光ダイオード保持部[Description of Signs] 1 Flexible substrate 2 Silicone rubber sheet 3 Polyimide layer 4 Wiring pattern 5 Light emitting diode bare chip 6 Phosphor 7 Sapphire substrate 8 N-type semiconductor 9 P-type semiconductor 10 Active layer 11 Anode electrode 12 Cathode electrode 13 Solder 14 Adhesive sheet Reference Signs List 15 transfer roll 16 heater 17 through hole 18 thin plate 19 squeegee 20 phosphor paste 21 recess (recess) for embedding light emitting diode and phosphor 22 light emitting diode holding part provided on adhesive sheet
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田村 哲志 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 清水 正則 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5F041 CA40 DA04 DA13 DA20 DA91 DB08 EE25 FF11 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tetsushi Tamura 1006 Kazuma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Inventor Masanori Shimizu 1006 Kadoma Kadoma, Kadoma City, Osaka Pref. Term (reference) 5F041 CA40 DA04 DA13 DA20 DA91 DB08 EE25 FF11
Claims (9)
数の発光ダイオードを、配線パターンを有する基板上に
転写する工程を含むことを特徴とする発光ダイオードを
用いた照明装置の製造方法。1. A method for manufacturing a lighting device using a light emitting diode, comprising a step of transferring a plurality of light emitting diodes arranged on an adhesive or a charged body onto a substrate having a wiring pattern.
あり、前記転写ロール上に配置された発光ダイオード
を、配線パターンを有する基板上に順次転写する請求項
１に記載の製造方法。2. The method according to claim 1, wherein the adhesive or charged body is a transfer roll, and the light emitting diodes arranged on the transfer roll are sequentially transferred onto a substrate having a wiring pattern.
ンを有する基板の配置に応じて、前記粘着体または帯電
体の表面に複数の凸部を有し、前記凸部上に配置された
発光ダイオードを、配線パターンを有する基板上に転写
する請求項１または２に記載の製造方法。3. The adhesive or charged body has a plurality of projections on the surface of the adhesive or charged body according to the arrangement of a substrate having a wiring pattern, and the light emitting element is disposed on the projections. 3. The method according to claim 1, wherein the diode is transferred onto a substrate having a wiring pattern.
の貫通孔を有する薄板を、前記貫通孔が配線パターンを
有する基板上に実装された前記発光ダイオードと一致す
るように重ね合せた後、蛍光体ペーストを前記貫通孔に
埋め込み、前記貫通孔からはみ出した前記蛍光体ペース
トを除去することによって前記発光ダイオードに蛍光体
層を形成する請求項１〜３のいずれかに記載の製造方
法。4. A phosphor after laminating a thin plate having a plurality of through holes larger than the width of the light emitting diode so that the through holes coincide with the light emitting diodes mounted on a substrate having a wiring pattern. The method according to claim 1, wherein a paste is embedded in the through-hole, and the phosphor paste protruding from the through-hole is removed to form a phosphor layer on the light emitting diode.
数の凹部を有するフレキシブル基板の前記凹部に前記発
光ダイオードを実装した後、前記凹部に蛍光体ペースト
を埋め込み、前記凹部からはみ出した前記蛍光体ペース
トを除去することによって前記発光ダイオードに蛍光体
層を形成する請求項１〜３のいずれかに記載の製造方
法。5. A phosphor substrate having a plurality of recesses for mounting the light emitting diodes, after the light emitting diodes are mounted in the recesses, a phosphor paste is embedded in the recesses, and the phosphor paste protrudes from the recesses. The method according to claim 1, wherein a phosphor layer is formed on the light emitting diode by removing the phosphor.
た蛍光体を、配線パターンを有する基板上に配置された
発光ダイオードを覆うように転写し、前記発光ダイオー
ドに蛍光体層を形成する請求項１〜３のいずれかに記載
の製造方法。6. A phosphor arranged on the adhesive or the charged body is transferred so as to cover a light emitting diode arranged on a substrate having a wiring pattern, and a phosphor layer is formed on the light emitting diode. The method according to claim 1.
装個数が、１平方センチメートルあたり１個〜１００個
である請求項１〜６のいずれかに記載の製造方法。7. The manufacturing method according to claim 1, wherein the number of light-emitting diodes mounted on the substrate is 1 to 100 per square centimeter.
するための部材であって、その表面に発光ダイオードを
配置するための複数の凸部を有することを特徴とする粘
着性または帯電性のシート又はロール。8. A sticky or chargeable sheet for manufacturing a lighting device using a light emitting diode, the member having a plurality of projections for arranging the light emitting diode on a surface thereof. Or roll.
するための部材であって、発光ダイオードを実装するた
めの複数の凹部を有することを特徴とするフレキシブル
基板。9. A flexible substrate, which is a member for manufacturing a lighting device using a light emitting diode, wherein the flexible substrate has a plurality of concave portions for mounting the light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001078144A JP2002280613A (en) | 2001-03-19 | 2001-03-19 | Method and member for manufacturing illuminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001078144A JP2002280613A (en) | 2001-03-19 | 2001-03-19 | Method and member for manufacturing illuminating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002280613A true JP2002280613A (en) | 2002-09-27 |
Family
ID=18934798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001078144A Pending JP2002280613A (en) | 2001-03-19 | 2001-03-19 | Method and member for manufacturing illuminating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002280613A (en) |
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