JP2002203473A - Cold cathode field electron emission element, its manufacturing method, and cold cathode field electron emission display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission element capable of uniformly and easily forming an electron emission part having high electron emission efficiency. SOLUTION: This cold cathode field electron emission element has: a cathode electrode 11 formed on a support body 10; an insulating layer 12 formed on the support body 10 and the cathode electrode 11; a gate electrode 13 formed on the insulating layer 12; an opening part 14 formed in the gate electrode 13 and the insulating layer 12; and a plurality of electron emission parts 15A and 15B formed on the cathode electrode 11 located on the bottom of the opening part 14. In this case, the electron emission parts 15A and 15B are arranged on concentric opening part analogizing figures around the center part of the opening part 14, and the height of electron emission end parts 15a and 15b of the respective parts 15A and 15B increases as the electron emission parts are positioned close to the center part of the opening part 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cold cathode field emission device, a method of manufacturing the same, and a cold cathode field emission display.

[0002]

2. Description of the Related Art When an electric field having a strength exceeding a certain threshold is applied to a metal or semiconductor placed in a vacuum, electrons pass through a thin energy barrier near the surface of the metal or semiconductor by the quantum tunnel effect, and even at room temperature. Electrons are emitted into the vacuum. Electron emission based on such a principle is called cold cathode field emission, or simply field emission (field emission). In recent years, a flat-type cold-cathode field emission display (FED), which applies the principle of field emission to image display, has been proposed, and has advantages such as high brightness and low power consumption. Therefore, it is expected as an image display device which replaces a conventional cathode ray tube (CRT).

[0003] A cold cathode field emission display (hereinafter sometimes simply referred to as a display) generally includes a cathode panel having an electron emission region corresponding to each pixel arranged in a two-dimensional matrix, An anode panel having a phosphor layer which emits light by being excited by collision with electrons emitted from the electron emission region is arranged to face each other via a high vacuum layer. Usually, a plurality of cold cathode field emission devices (hereinafter sometimes simply referred to as field emission devices) are provided in each electron emission region on the cathode panel. Each field emission device has an electron emission portion, and further has a gate electrode for extracting electrons from the electron emission portion.

In order to obtain a large emission electron current at a low drive voltage in the structure of such a display device, for example, the tip of an electron emission portion constituting a field emission element is required to have a sharply pointed shape, It is required to miniaturize the field emission device to increase the density of the field emission device in the electron emission region corresponding to one pixel and to shorten the distance between the tip of the electron emission portion and the gate electrode. Therefore,
In order to satisfy these requirements, field emission devices having various configurations have conventionally been proposed.

As one of typical examples of such conventional field emission devices, a so-called Spindt type field emission device in which an electron emission portion is formed of a conical conductor is known. FIG. 39 shows a conceptual diagram of a display device incorporating the Spindt-type field emission device. The cathode panel CP of this display device includes a cathode electrode 211 formed on a support 210, an insulating layer 212 formed on the support 210 including the cathode electrode 211, and a gate formed on the insulating layer 212. An electrode 213, an opening 214 provided in the gate electrode 213 and the insulating layer 212, and a conical electron emitting portion 215 formed in the opening 214. A predetermined number of field emission devices are arranged in a two-dimensional matrix to form one pixel. On the other hand, the anode panel AP
Has a structure in which a phosphor layer 21 is formed in a predetermined pattern on a substrate 20, and the phosphor layer 21 is covered with an anode electrode 22.

When a voltage is applied between the electron emitting portion 215 and the gate electrode 213, electrons are extracted from the tip of the electron emitting portion 215 by the resulting electric field. The electrons are attracted to the anode electrode 22 of the anode panel, and collide with the phosphor layer 21 which is a light emitting layer formed between the anode electrode 22 and the substrate 20. As a result, the phosphor layer 21 is excited to emit light, and a desired image can be obtained. The operation of the field emission device is basically controlled by a voltage applied to the gate electrode 213 and the cathode electrode 211.

An outline of a method for manufacturing such a Spindt-type field emission device will be described below with reference to FIGS. This manufacturing method is basically a method of forming the conical electron emitting portion 215 by vertical vapor deposition of a metal material. In other words, the vapor deposition particles are vertically incident on the opening 214, but the shielding effect of the overhang-like deposit formed at the opening end of the opening 214 is used to form the opening 2.
The amount of vapor deposition particles reaching the bottom of the substrate 14 is gradually reduced, and the electron-emitting portion 215 made of a conical deposit is formed in a self-aligned manner. Here, a method of forming a peel-off layer 216 on the gate electrode 213 in advance to facilitate removal of unnecessary overhang-like deposits will be described.

[Step-10] First, after forming a cathode electrode 211 made of niobium (Nb) on a support 210 made of, for example, a glass substrate, an insulating layer 212 made of SiO ₂ and a gate made of a conductive material are formed thereon. An electrode 213 is sequentially formed, and then the gate electrode 213 and the insulating layer 212 are formed.
Is formed by patterning (see FIG. 40A). This patterning can be performed by formation of a resist mask by a usual photolithography technique and dry etching technique through the resist mask.

[Step-20] Next, a peel-off layer 216 is formed by obliquely depositing aluminum on the support 210. At this time, by selecting a sufficiently large incident angle of the deposition particles with respect to the normal line of the support 210, almost no aluminum is deposited on the bottom of the opening 214, and the peel-off layer is formed on the gate electrode 213 and the insulating layer 212. 216 can be formed. The peel-off layer 216 protrudes like an eave from the opening end of the opening 214, whereby the diameter of the opening 214 is substantially reduced (see FIG. 40B).

[Step-30] Next, for example, molybdenum (Mo) is vertically deposited on the entire surface. At this time, the conductive material layer 21 having an overhang shape on the peel-off layer 216
7 grows, the substantial diameter of the opening 214 is gradually reduced, so that the deposition particles contributing to the deposition at the bottom of the opening 214 are gradually limited to those passing near the center of the opening 214. Become so. As a result, FIG.
As shown in FIG. 1A, a conical deposit is formed at the bottom of the opening 214, and the conical deposit becomes the electron emission portion 215.

[Step-40] Thereafter, the peel-off layer 216 is peeled off from the surfaces of the gate electrode 213 and the insulating layer 212 by an electrochemical process and a wet process, and the conductive material layer 21 above the gate electrode 213 and the insulating layer 212 is removed.
7 is selectively removed (see FIG. 41B).

[0012]

By the way, the electron emission characteristics and the emission electron current of the field emission device having the structure shown in FIG. 41B depend on the edge of the gate electrode 213 forming the upper end of the opening 214. It largely depends on the distance from 213A to the tip of the electron emission section 215. This distance is usually on the order of submicron, and the processing accuracy of the shape of the opening 214, the dimensional accuracy of the diameter, the film thickness accuracy of the conductive material layer 217 formed in [Step-30], and further, Greatly depends on the shape accuracy of the peel-off layer 216.
However, the conductive material layer 217 having a uniform film thickness over the entire support having a large area is actually formed by vertical evaporation, or the peel-off layer 21 having an eaves shape having a uniform dimension is formed.
It is extremely difficult to form 6 by oblique deposition, and a certain degree of in-plane variation and lot-to-lot variation cannot be avoided. This variation depends on the image display characteristics of the display device,
For example, this may cause variations in the brightness of the image. In addition, a large deposition apparatus is required, the throughput is reduced, and when the peel-off layer 216 formed over a large area is removed, the residue causes contamination of the cathode panel, and the display device There is also a problem that the manufacturing yield is lowered.

Further, in order to obtain practical brightness as a display device, the density of the field emission devices may be as high as 10,000 / mm ² , and as the size of each field emission device decreases, A semiconductor process tends to be frequently used for the formation. However, when the semiconductor process is frequently used, problems such as a decrease in throughput and an increase in manufacturing cost are unavoidable.

To cope with such a problem, various flat field emission devices have been proposed. A flat field emission device whose schematic partial end view is shown in FIG. A gate electrode 313, an opening 314 formed in the gate electrode 313 and the insulating layer 312, and a planar electron emission portion 315 formed on the cathode electrode 311 located at the bottom of the opening 314. I have. The electron emission section 315 is made of a material having a low work function. Then, based on an electric field formed by a voltage applied between the gate electrode 313 and the cathode electrode 311, electrons are emitted from the electron emitting portion 315 by a quantum tunnel effect.

Such a flat type field emission device is easier to manufacture than a Spindt type field emission device. However, since the electric field intensity for emitting electrons from the electron emitting portion depends on the distance from the edge 313A of the gate electrode 313, the electric field intensity depends on the portion of the electron emitting portion 315 located at the bottom of the opening 314. different. Therefore, there is a problem that electrons are not efficiently emitted from the electron emitting portion 315. Alternatively, for example, the display screen may flicker, and a stable display screen may not be obtained.

Accordingly, the present invention provides a cold cathode field emission device capable of uniformly and easily forming an electron emission portion having a high electron emission efficiency and having less variation in electron emission characteristics, a method of manufacturing the same, and It is an object of the present invention to provide a cold cathode field emission display device incorporating such a cold cathode field emission device.

[0017]

According to a first aspect of the present invention, there is provided a cold-cathode field emission device comprising: (A) a cathode electrode formed on a support;
An insulating layer formed on the support and the cathode electrode, (C)
A plurality of electrons formed on a gate electrode formed on the insulating layer, (D) an opening formed in the gate electrode and the insulating layer, and (E) a cathode electrode located at the bottom of the opening. A plurality of electron-emitting portions, the plurality of electron-emitting portions being arranged on a concentric opening-like figure centered on the center of the opening, and an electron-emitting end of each electron-emitting portion. The height of the portion is higher in an electron emitting portion located closer to the center of the opening.

The second object of the present invention for achieving the above object is as follows.
The cold cathode field emission device according to the aspect (A) is formed on the cathode electrode formed on the support, (B) the insulating layer formed on the support and the cathode electrode, and (C) the insulating layer formed on the insulating layer. (D) an opening formed in the gate electrode and the insulating layer, and (E) a carbon-based thin film selective growth region formed on or above a portion of the cathode electrode located at the bottom of the opening. A cold cathode field emission device having an electron emission portion formed thereon, wherein the electron emission portion is made of a carbon-based thin film, and the electron emission portion is cut along a virtual vertical plane passing through the center of the opening. Is characterized in that the locus drawn by the electron-emitting end portion monotonically increases toward the center of the opening or rises stepwise toward the center of the opening.

The cold cathode field emission device according to the first embodiment or the second embodiment of the present invention can be incorporated in a cold cathode field emission display device, for example, various electron beams such as a scanning electron microscope. Can be used as an electron beam source in an apparatus that uses.

The first object of the present invention for achieving the above object is as follows.
The cold cathode field emission display according to the aspect of the present invention comprises a plurality of pixels, and each pixel is provided on the substrate in opposition to the plurality of cold cathode field emission devices and the cold cathode field emission devices. Each cold cathode field emission device comprises an anode electrode and a phosphor layer. Each cold cathode field emission device comprises (A) a cathode electrode formed on a support, (B) an insulating layer formed on the support and the cathode electrode, A) a gate electrode formed on the insulating layer, (D) an opening formed in the gate electrode and the insulating layer,
And (E) a plurality of electron-emitting portions formed on a portion of the cathode electrode located at the bottom of the opening, wherein the plurality of electron-emitting portions are concentric about the center of the opening. The electron emission portions are arranged on the similar figure of the opening, and the height of the electron emission end of each electron emission portion is higher as the electron emission portion is located closer to the center of the opening.

The second object of the present invention for achieving the above object is as follows.
The cold cathode field emission display according to the aspect of the present invention comprises a plurality of pixels, and each pixel is provided on the substrate in opposition to the plurality of cold cathode field emission devices and the cold cathode field emission devices. Each cold cathode field emission device comprises an anode electrode and a phosphor layer. Each cold cathode field emission device comprises (A) a cathode electrode formed on a support, (B) an insulating layer formed on the support and the cathode electrode, A) a gate electrode formed on the insulating layer, (D) an opening formed in the gate electrode and the insulating layer,
And (E) an electron-emitting portion formed on a portion of the cathode electrode located at the bottom of the opening or on a carbon-based thin-film selective growth region formed thereon. The trajectory drawn by the electron emission end when the electron emission portion is cut along a virtual vertical plane passing through the center of the opening becomes monotonically higher toward the center of the opening,
Alternatively, it is characterized in that it rises stepwise toward the center of the opening.

By the way, when the electron emitting portion does not exist,
When a positive voltage is applied to the gate electrode and the cathode electrode is grounded, the electric field formed in the opening is schematically as shown in FIG. The axis that is the normal direction of the cathode electrode and passes through the center of the opening is defined as the Z axis, and two orthogonal axes on the cathode electrode that intersect with the Z axis are defined as the X axis and the Y axis. In (A) of FIG. 38, in the X-Z plane, showing the electric field strength E _Z of the Z-axis direction along the X axis in general. Further, in (B) of FIG. 38, in the X-Z plane, showing the electric field strength E _Z of the Z-axis direction along the Z axis in general. FIG.
Of (A) As is clear from, along the X axis, the lowest electric field intensity E _Z at the center of the opening. Also, as is clear from FIG. 38B, along the Z axis,
Farther from the gate electrode, the electric field strength E _Z is low.

Therefore, in the electron-emitting portion located at the bottom of the opening, the applied electric field intensity _EZ decreases as the portion of the electron-emitting portion is located closer to the center of the opening. By the way, if there is a difference in the electric field intensity applied to the electron emitting portion, a difference occurs in the electron current value emitted from the electron emitting portion. As a result, the display screen may flicker, for example, and a stable display screen may not be obtained.

However, in the cold cathode field emission device or the cold cathode field emission display device according to the first embodiment of the present invention, or the cold cathode field emission device of the present invention described later, The height of the electron emission end portion of the electron emission portion is higher as the electron emission portion is located closer to the center of the opening. In the method for manufacturing a cold cathode field emission device or a cold cathode field emission display according to the second aspect of the present invention, or a method for manufacturing a cold cathode field emission device of the present invention to be described later, When the electron emission part is cut along a virtual vertical plane passing through the part, the trajectory drawn by the electron emission end increases monotonically toward the center of the opening, or alternatively, increases stepwise toward the center of the opening. Is rising. As a result, regardless of the position of each electron-emitting portion (or electron-emitting portion) at the bottom of the opening, the variation in the electric field intensity near the tip of the electron-emitting portion can be reduced. The value of the electron current emitted from the electron-emitting portion (or the electron-emitting portion) can be made substantially constant, and the density of the electron current emitted from the cold cathode field emission device can be increased. Also, unless the height of the electron-emitting end of the electron-emitting portion is set higher than that of the electron-emitting portion located closer to the center of the opening, the shielding effect of the portion of the electron-emitting portion located further outside may occur. There is a possibility that a strong electric field may not be applied to the portion of the electron emitting portion arranged near the center of the opening, but such a problem can also be solved.

Each electron emitting portion (or electron emitting portion)
Electron discharge end of the height (position in the Z-axis direction), it is preferable that the value of the electric field strength E _Z in the Z-axis direction of the electron-emitting end of the electron-emitting portion is determined to be equal as possible.

The opening similar figure refers to a figure similar to the figure of the opening when the opening is projected on a virtual plane parallel to the surface of the support (referred to as an opening plane shape). When the plane shape of the opening is, for example, a circle, the figure similar to the opening is a circle. When the plane shape of the opening is, for example, a rectangle, the figure similar to the opening is a rectangle.

In the cold cathode field emission device or the cold cathode field emission display according to the first or second embodiment of the present invention, the first to the second embodiments of the present invention to be described later. In the method of manufacturing the cold cathode field emission device according to the eleventh aspect (hereinafter, these may be collectively simply referred to as the present invention), the planar shape of the opening is:
Any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, and a rounded polygon can be used.

In the cold cathode field emission device or the cold cathode field emission display device according to the first aspect of the present invention, the aperture similar to the aperture at any scale and concentric about the center of the aperture. Although a plurality of electron emitting portions are arranged on the figure, the electron emitting portions may be arranged at the center of the opening or may not be arranged. If the heights of the electron emission ends of the electron emission portions located at the edges of the opening similar figure vary, the average value of the heights is defined as the height of the electron emission ends of the electron emission portions. Each electron-emitting portion may be formed continuously or discontinuously on the opening similar figure.

In the cold cathode field emission device or the cold cathode field emission display according to the second aspect of the present invention, the electron emission portion is cut along a virtual vertical plane passing through the center of the opening. The trajectory drawn by the electron emission end increases monotonically toward the center of the opening or rises in a stepwise manner toward the center of the opening. Sometimes not satisfied. That is, for example, when the electron emission portion is made of carbon nanotubes,
The trajectory connecting the electron emission ends of one carbon nanotube may not be monotonically higher toward the center of the opening, or may not rise stepwise toward the center of the opening. is there. However, macroscopically,
That is, as a whole, the above requirements are satisfied.
In other words, even if the above requirements are not microscopically satisfied, if the above requirements are satisfied as a whole of the electron-emitting portion, it can be said that the above requirements are satisfied.

In the cold cathode field emission device or the cold cathode field emission display according to the first or second embodiment of the present invention, the height of the electron emission end of the electron emission portion is, for example, The height may be set based on the flat support surface. The same applies to the following various descriptions.

In the cold cathode field emission device or the cold cathode field emission display according to the first aspect of the present invention, the height of the electron emission end of each electron emission portion is close to the center of the opening. In order to increase the height of the electron-emitting portion located in the portion, it is preferable that the thickness of the portion of the cathode electrode located at the bottom of the opening is thicker in the portion closer to the center of the opening. Alternatively, the base further includes a base formed on the portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support; The thickness may be thicker as the portion is closer to the center of the opening, and the plurality of electron emitting portions may be formed on the base located at the bottom of the opening or on the portion of the cathode electrode. Alternatively, the thickness of the portion of the support located at the bottom of the opening may be thicker nearer the center of the opening.

In these cases in the cold cathode field emission device or the cold cathode field emission display device according to the first embodiment of the present invention, the thickness of the portion of the cathode electrode, the base and the portion of the support are smooth. It may be thicker.
In other words, the cross-sectional shape of the portion of the cathode electrode or the base, which is located at the bottom of the opening in a virtual plane perpendicular to the support, or the portion of the cathode electrode or the base when the portion of the support is cut, Can be, for example, a triangle or a trapezoid. Alternatively, the cathode electrode part or base,
The thickness of the portion of the support may be increased stepwise, or in some cases, a constant thickness base may be provided at the center of the cathode electrode located at the bottom of the opening. Such a case is included in the concept that the thickness of the portion of the cathode electrode, the base, and the support is closer to the center of the opening.

Alternatively, in the cold cathode field emission device or the cold cathode field emission display according to the first aspect of the present invention, the cold cathode field emission device is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. Cathode electrode part and base, cathode electrode part and base when cutting support part,
The locus drawn by the surface of the support portion may be monotonously increased toward the center of the opening, or may be configured to rise stepwise toward the center of the opening.
Then, assuming that the trajectory drawn by the surface of the portion of the cathode electrode, the base, and the portion of the support monotonously increases toward the center of the opening, the imaginary vertical plane passing through the center of the opening forms the bottom of the opening. An example in which the cross-sectional shape of the portion of the cathode electrode, the base and the portion of the support when the portion of the cathode electrode and the position of the support are cut is, for example, a triangle. In addition, assuming that the ascending portion rises stepwise toward the center of the opening, the portion of the cathode electrode, the base, and the portion of the support located at the bottom of the opening are cut along a virtual vertical plane passing through the center of the opening. For example, the cross-sectional shape of the portion of the cathode electrode, the base portion, and the portion of the support when the above-described process is performed is, for example, a one-step staircase, two or more steps, one trapezoid, or a combination of a plurality of trapezoids. it can. here,
The step shape means a combination of a substantially vertical line segment and a horizontal line segment. The height of the horizontal line or the upper side of the trapezoid may be constant toward the center of the opening, may be monotonically increased, or the height of the monotonically increased portion may be constant. May be combined.

In the cold cathode field emission device or the cold cathode field emission display device according to the second aspect of the present invention, the carbon-based thin film selective growth region is located above the portion of the cathode electrode located at the bottom of the opening. When the carbon-based thin film selective growth region is cut along a virtual vertical plane passing through the center of the opening, the locus drawn by the surface of the carbon-based thin film selective growth region is monotonous toward the center of the opening. It can be configured to be higher or to rise in a stepwise manner toward the center of the opening. Alternatively, the carbon-based thin film selective growth region is formed on the portion of the cathode electrode located at the bottom of the opening, and the cathode electrode located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the cathode electrode located at the bottom of the opening when the portion is cut increases monotonically toward the center of the opening, or stairs toward the center of the opening. It is possible to adopt a configuration that rises in a shape. Alternatively,
A base formed on the portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support, and passing through the center of the opening; The locus drawn by the surface of the base when the base is cut along the virtual vertical plane increases monotonically toward the center of the opening or rises stepwise toward the center of the opening. The system thin film selective growth region may be formed on a base located at the bottom of the opening or on a portion of the cathode electrode. Alternatively, the carbon-based thin film selective growth region is formed on the portion of the cathode electrode located at the bottom of the opening, and the support is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the support located at the bottom of the opening when the portion of the opening is cut increases monotonically toward the center of the opening or stairs toward the center of the opening. It is possible to adopt a configuration in which the shape is raised.

Here, it is assumed that the locus drawn by the surface of the selective growth region of the carbon-based thin film, the portion of the cathode electrode, the portion of the base, and the portion of the support is monotonously increased toward the center of the opening. The carbon-based thin film selective growth region located at the bottom of the opening on a virtual vertical plane passing through the center, the carbon-based thin film selective growth region when the cathode electrode portion, base portion, and support portion are cut, and the cathode electrode portion The cross-sectional shape of the base, the support, and the support may be, for example, triangular. Also, assuming that the ascent is stepped toward the center of the opening, the carbon-based thin film selective growth region located at the bottom of the opening on the virtual vertical plane passing through the center of the opening, the portion of the cathode electrode, and the base portion The cross-sectional shape of the carbon-based thin film selective growth region, the cathode electrode portion, the base, and the support portion when the support portion is cut is, for example, one step shape, two or more step shapes, An example of a trapezoid or a combination of a plurality of trapezoids can be given. Here, the staircase shape means a combination of a substantially vertical line segment and a horizontal line segment.
The upper side of the horizontal line or trapezoid may have a constant height toward the center of the opening, may have a monotonically high height, or may have a monotonically high portion and a constant height. A combination of parts may be used.

In the cold cathode field emission device or the cold cathode field emission display according to the first or second embodiment of the present invention, the second insulating layer formed on the insulating layer and the gate electrode, In addition, the light emitting device may further include a focusing electrode formed on the second insulating layer, and at least the second insulating layer has a second opening communicating with the opening. The focusing electrode has a potential difference between the anode electrode and the cathode electrode of the order of several kilovolts, and the distance between the two electrodes is relatively long. This is an electrode provided to prevent the trajectory of emitted electrons from diverging. By increasing the convergence of the emitted electron trajectories, optical crosstalk between pixels is reduced, and
Further, even if the pixels are miniaturized, a high definition of the display screen can be achieved. The focusing electrodes do not necessarily have to be provided individually for each cold cathode field emission device. For example, a band-shaped electrode is provided for each column or each row of the cold cathode field emission devices arranged in a two-dimensional matrix. May be provided. In the case where the focusing electrode is provided in a strip shape for each column or each row, the second opening may be formed only in the second insulating layer. On the other hand, when a focusing electrode is provided for each cold cathode field emission device, it is necessary to form a second opening penetrating both the focusing electrode and the second insulating layer.

The first object of the present invention for achieving the above object is as follows.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (d) a step of forming an opening at least in the insulating layer; Forming a plurality of electron-emitting portions on the cathode electrode so as to be arranged on a concentric opening-like figure centered on the center of the opening, and in the step (a), the step (d) ), The thickness of the portion of the cathode electrode corresponding to the portion where the opening is to be formed is increased as the portion is closer to the center of the opening, and the step (e) is performed after the step (d), or Step (e) is performed after step (a).

The second object of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; and (d) a step of forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer. (E) forming a plurality of electron-emitting portions on the cathode electrode exposed at the bottom of the opening so as to be arranged on the concentric opening-like figure centered on the center of the opening. After the step (d), the thickness of the portion of the cathode electrode exposed at the bottom of the opening is increased as the portion is closer to the center of the opening.

The third object of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a base on a support; (b) forming a cathode electrode on the support and the base; (c) forming an insulating layer on the entire surface; and (d) forming an insulating layer on the entire surface. (E) forming an opening in at least the insulating layer, and (f) being arranged on a concentric opening similar figure centering on the center of the opening. Forming a plurality of electron-emitting portions on the cathode electrode, wherein in the step (a), a base is formed on a support corresponding to a portion where an opening is to be formed in the step (e). And, the thickness of the base is made thicker in the portion closer to the center of the opening, and the step (f) is performed after the step (e), or the step (f) is performed after the step (b). It is characterized by executing.

In the method for manufacturing a cold cathode field emission device according to the third aspect of the present invention,
In the step (e), when an opening in which the cathode electrode is exposed is formed at the bottom, a base having a constant thickness may be provided below the center of the cathode located at the bottom of the opening.

The fourth object of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) forming a base on the cathode electrode;
Forming an insulating layer on the entire surface; (d) forming a gate electrode on the insulating layer; (e) forming an opening in at least the insulating layer; and (f) forming an opening in at least the insulating layer. Forming a plurality of electron-emitting portions on the base portion so as to be arranged on a concentric opening-like figure centered on the center portion; Forming a base on the portion of the cathode electrode corresponding to the portion forming the portion, and increasing the thickness of the base toward a portion closer to the center of the opening; The method is characterized in that the step (f) is executed after the step (b) or that the step (f) is executed after the step (b).

In the method for manufacturing a cold cathode field emission device according to the fourth aspect of the present invention, the base may be extended on the cathode electrode under the insulating layer or on the support in some cases. You may. Further, in the step (e), when an opening having a base exposed at the bottom is formed, the cathode electrode may be exposed in some cases. In this case, in the step (f), the plurality of electron-emitting portions are formed on the base and the cathode electrode exposed at the bottom of the opening, and such an embodiment also relates to the fourth embodiment of the present invention. It is included in the method for manufacturing a cold cathode field emission device.

The fifth aspect of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; and (d) a step of forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer. (E) a step of forming a base on the cathode electrode exposed at the bottom of the opening; Forming the electron-emitting portion on a base formed at the bottom of the opening. I do.

In the method of manufacturing a cold cathode field emission device according to the fifth aspect of the present invention, in step (e), a base is formed on a portion of the cathode electrode exposed at the bottom of the opening. At that time, the cathode electrode may also be exposed. In this case, in the step (f), a plurality of electron-emitting portions are formed on the bottom of the opening and formed on the exposed base and the cathode electrode.
The present invention is included in a method for manufacturing a cold cathode field emission device according to the fifth aspect of the present invention.

The sixth object of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (d) a step of forming an opening at least in the insulating layer; Forming a plurality of electron-emitting portions on the cathode electrode so as to be arranged on the concentric opening-like figure centered on the center of the opening, and prior to the step (a), The thickness of the portion of the support corresponding to the portion where the opening is formed in d) is made thicker in the portion closer to the center of the opening, and the step (e) is performed after the step (d), or , Step (e) is performed after step (a).

The seventh object of the present invention to achieve the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (d) a step of forming an opening at least in the insulating layer; On the portion of the cathode electrode on which the electron emission portion is to be formed, the trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening increases monotonically toward the center of the opening, or A step of forming a carbon-based thin film selective growth region that rises stepwise toward the center of the opening; and
(F) forming an electron-emitting portion made of a carbon-based thin film on the carbon-based thin film selective growth region;
Is performed after step (a) and then step (f) is performed, or alternatively, step (e) is performed after step (a) and step (f) is performed after step (d). Alternatively, step (e) is performed after step (d), and then step (f) is performed.

The eighth object of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) forming a cathode electrode on a support;
(B) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (d) a step of forming an opening at least in the insulating layer; The trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening increases monotonically toward the center of the opening,
Alternatively, a step of processing a portion of the cathode electrode on which the electron emitting portion is to be formed so as to rise in a stepwise manner toward the center of the opening; Forming a carbon-based thin film selective growth region, and (g) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region.
Performing step (e) after step (a) and then performing step (f) and then performing step (g), or alternatively performing step (e) after step (a) Then, the step (f) is executed, and the step (g) is executed after the step (d), or alternatively, the step (e) is executed after the step (a), and the step (f) is executed. Performing after step (d) and then performing step (g), or alternatively performing step (e) after step (d) and then performing step (f)
And then performing step (g).

The ninth aspect of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect of
(A) A locus drawn on the surface of the support on which the electron emission portion is to be formed when cut along a virtual vertical plane passing through the center of the opening to be formed later toward the center of the opening. Forming a base that is monotonically higher or rises stepwise toward the center of the opening; and (b) forming a cathode electrode on the support and base.
(C) a step of forming an insulating layer on the entire surface; (d) a step of forming a gate electrode on the insulating layer; (e) a step of forming an opening at least in the insulating layer; Forming a carbon-based thin film selective growth region on a portion of the cathode electrode on the base, and (g) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region. And providing step (f) after step (b) and then performing step (g), or alternatively, performing step (f) after step (b) and performing step (g). It is characterized in that it is executed after the step (e), or alternatively, the step (f) is executed after the step (e), and then the step (g) is executed.

The first object of the present invention for achieving the above object is as follows.
The method for manufacturing a cold cathode field emission device according to aspect 0,
(A) forming a cathode electrode on a support;
(B) forming an insulating layer on the entire surface, (c) forming a gate electrode on the insulating layer, (d) forming an opening in at least the insulating layer, and (e) electron emission. On the portion of the cathode electrode where the portion is to be formed, the trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening increases monotonically toward the center of the opening, or A step of forming a base that rises stepwise toward the center of the opening, (f) a step of forming a carbon-based thin film selective growth region on the base, and (g) an electron emission made of the carbon-based thin film Forming a portion on the carbon-based thin film selective growth region, wherein step (e) is performed after step (a), then step (f) is performed, and then step (g)
Or alternatively, performing step (e) after step (a), then performing step (f), and performing step (g).
Is performed after step (d), or alternatively, step (e) is performed after step (a), step (f) is performed after step (d), and then step (g) is performed. Or alternatively, performing step (e) after step (d), then performing step (f), and then performing step (g).
Is performed.

The first object of the present invention for achieving the above object is as follows.
The method for manufacturing a cold cathode field emission device according to one aspect includes:
(A) The locus drawn by the surface when cut along a virtual vertical plane passing through the center of the opening formed later monotonically increases toward the center of the opening, or A step of processing the thickness of a portion of the support on which the electron-emitting portion is to be formed so as to rise in a stepwise manner; (b) a step of forming a cathode electrode on the support; Forming a layer, (d) forming a gate electrode on the insulating layer, (e) forming an opening in at least the insulating layer, and further (f) forming an electron emitting portion. Forming a carbon-based thin film selective growth region on a portion of the cathode electrode to be formed; and (g) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region, Step (f) is performed after step (b), and then step (g) is performed. Or rows, or alternatively, step (f)
Is performed after step (b), step (g) is performed after step (e), or step (f) is performed after step (e).
And thereafter, the step (g) is executed.

The method of manufacturing the cold cathode field emission devices according to the first to eleventh aspects of the present invention (hereinafter, these may be collectively referred to as the manufacturing method of the present invention) will be described. Forming a gate electrode on the insulating layer, forming a second insulating layer on the insulating layer and the gate electrode, and then forming a focusing electrode on the second insulating layer. In the step of forming the opening, a second opening may be formed in at least the second insulating layer, and an opening communicating with the second opening may be formed in at least the insulating layer. .

Here, in the manufacturing method of the present invention, the expression that the opening is formed “at least” in the insulating layer is as follows.
This is because an opening is formed in the gate electrode in an earlier step, and an opening may be formed only in the insulating layer inside the opening already formed in the gate electrode. In the case of forming the focusing electrode, the expression that the second opening is formed “at least” in the second insulating layer is that the opening is formed in the focusing electrode in the previous process, and the focusing electrode is formed in the focusing electrode. This is because the second opening may be formed only in the second insulating layer inside the already formed opening. Examples of a method for forming an opening in the insulating layer or the second insulating layer include, for example, isotropic etching, anisotropic etching, and a combination of anisotropic etching and isotropic etching using an etching mask. be able to. The etching may be appropriately selected from a dry etching method and a wet etching method.

In the cold cathode field emission device or the cold cathode field emission display device according to the first aspect of the present invention, the electron emission device is disposed so as to face the electron irradiation surface or the anode electrode. Is composed of a plurality of conductive particles having a major axis and a minor axis, and the major axis of the conductive particles may be arranged in a direction crossing the electron irradiation surface or the anode electrode. The “direction intersecting with the electron irradiation surface or the anode electrode” may be a direction intersecting perpendicularly with the electron irradiation surface or the anode electrode, or may be a direction intersecting the electron irradiation surface or the anode electrode (or the phosphor layer). ) May be in a direction obliquely intersecting with the electron irradiation surface or the anode electrode as long as the electrons can collide with the above. Even in the method for manufacturing a cold cathode field emission device according to the first to sixth aspects of the present invention,
The electron-emitting device is preferably made of a plurality of conductive particles having a major axis and a minor axis. The shape of the conductive particles is not particularly limited as long as the exposed portions of the conductive particles in the surface layer portion of the electron-emitting portion can be shaped so as to be sharp projections, that is, having a major axis and a minor axis. Although not particularly limited, needle-like particles and plate-like particles having a flat surface can be mentioned as typical examples. The flat surface may have irregularities. In the case of acicular particles, the major axis is defined as being parallel to its longitudinal direction, and the minor axis is defined as being perpendicular to its longitudinal direction. In the case of plate-like particles having a flat surface,
The major axis is defined as being parallel to the flat surface, and the minor axis is defined as being perpendicular to the flat surface. The longer axis of the conductive particles is arranged in a direction crossing the electron irradiation surface or the anode electrode, more specifically, a sharp portion corresponding to a needle tip for needle-like particles, and a particle for plate-like particles. Means that the side surface having a width corresponding to the thickness of the substrate faces the electron irradiation surface or the anode electrode. Since the electric field tends to concentrate on these sharp portions and side surfaces, high electron emission efficiency can be obtained in the electron emission portion. Therefore, the cold cathode field emission display can achieve low power consumption and high luminance display.

As the conductive particles, particles of a carbon-based material such as graphite; high melting points such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), and chromium (Cr) Metal particles; particles of a transparent conductive material such as ITO (indium tin oxide); iron (Fe) and its alloys (eg, Fe—Co alloy, Fe—Ni alloy)
Particles of ferrite; particles obtained by coating iron on ferrite particles. Among them, particles of a carbon-based material are preferable. Examples of the carbon-based material include graphite, amorphous carbon, and DLC (diamond-like carbon). Above all, graphite can maintain a predetermined shape of the electron-emitting portion by Van der Waals force without being used in combination with a binder.

In order to improve the electron emission efficiency, it is preferable that the particle size of the conductive particles is sufficiently smaller than the size of the electron emission portion. It is also possible to use a mixture of conductive particles having different sizes and shapes. As an example, when the diameter of the circular opening is approximately 1 to 20 μm and the carbon-based material particles are used as the conductive particles, the particle diameter (length of the long axis) of the carbon-based material particles is approximately 0.1 μm to 1 μm. It is preferable to be within the range. Further, as the conductive particles made of a carbon-based material, an average diameter (length of a long axis) made of graphite may be 0.1 mm.
Plate-like particles having a thickness of 5 μm and an average thickness (minor axis length) of 0.02 μm can be typically used. By selecting the particle size of the carbon-based material particles in such a range, a sufficiently high mechanical strength is provided at the edge of the electron emission portion, and the adhesion of the electron emission portion to the cathode electrode is improved. Alternatively, the conductive particles are preferably plate-like particles having a flat surface.

When the conductive particles are plate-like particles,
Area of the flat surface (S) the square root [S ^1/2] the thickness (t) aspect ratio of the conductive particles obtained by dividing the [S ^1/2 /
It is desirable that the average value of t] is 5 or more, more preferably 10 or more. Furthermore, the outer shape of the flat surface of the conductive particles is substantially circular, and the square root of the area (S) of the flat surface (S ^{1 /
2} ) has an average value (hereinafter referred to as the square root of the area) of 4.4
It is preferably not more than μm. The square root of the area is 4.4
The fact that it is not more than μm corresponds to an average diameter of about 5 μm assuming that the outer shape of all the conductive particles is circular. More preferably, the square root of the area is 2.7 μm or less (corresponding to an average diameter of about 3 μm). Further, considering the uniformity of the thickness of the electron emitting portion forming layer and the uniformity of the shape of the electron emitting portion described later, the square root of the area is 0.09.
It is preferable that conductive particles having a size of μm (corresponding to an average diameter of about 0.1 μm) or less occupy 40 to 95% of the total weight of the conductive particles, and the square root of the area is 0.04 to 0.07 μm.
m (corresponding to an average diameter of about 0.05 to 0.08 μm) is particularly preferred. The particle diameter (Stokes diameter) and particle size distribution when the outer shape of the conductive particles is circular are as follows:
It can be determined from measurement using a centrifugal sedimentation light transmission type particle size distribution analyzer.

The square root of the area of the conductive particles and the aspect ratio are based on the design requirements of a practical cold cathode field emission display. Now, let ρ (cm) be the radius of curvature at the tip of the electron emitting portion of the cold cathode field emission device, let E (volt / cm) be the electric field intensity at the tip of the electron emitting portion, and set the potential at the tip of the electron emitting portion. Is V (volts), the following equation (1) holds.

E = V / 5ρ (1)

Here, a case is considered where the potential V at the tip of the electron-emitting portion is the threshold voltage _Vth for electron emission. A voltage is applied to the electron-emitting portion from, for example, a cathode electrode control circuit through the cathode electrode. The voltage is in the order of several tens to hundreds of volts depending on the performance and cost of the transistors constituting the cathode electrode control circuit. It is desirable that The threshold electric field E _th corresponding to the threshold voltage V _th is determined by the constituent material of the electron-emitting portion. When the constituent material is a metal, it is generally about 10 ⁷ (volt / cm), and when the constituent material is a carbon-based material. Is generally 10 ⁶ (volts / c
m). For example, assuming that the threshold voltage V _th = 10 (volt) and the threshold electric field E _th = 10 ⁶ (volt / cm), from the above equation, ρ = 2 × 10 ⁻⁶ (cm) (= 0.02 μm)
m). This value is on the order of the dimension of the tip of the conductive particles. When the conductive particles are plate-like particles, the dimensions of the tip correspond to the thickness of the plate-like particles (the length of the short axis).

On the other hand, the square root of the area of the plate-like particles depends on the size of the electron emission portion, and the size of the electron emission portion is determined depending on the display screen size and the number of pixels of the cold cathode field emission display. . For example, a so-called XGA (eXtend
ed Graphics Array) Standard diagonal dimension 17-20
For an inch computer display, the number of pixels is 1
024 × 768. The size of a region corresponding to one pixel (one subpixel in a color display device) of a monochrome display device is represented by the size of a region (electron emission region) in which projected images of a cathode electrode and a gate electrode are orthogonal to each other. If the electrode width is 60 μm and the gate electrode width is 100 μm,
The size of the electron emission region is, for example, 60 μm × 100 μm. Since several to several hundred cold cathode field emission devices are formed in each electron emission region, the size of one cold cathode field emission device is on the order of several μm to 10 μm. In order to accurately form a cold cathode field emission device having such dimensions, the diameter (length of the long axis) of the plate-like particles constituting the electron emission portion should be about 0.1 μm to 0.5 μm. Is preferred. Since the thickness of the plate-like particles estimated as the radius of curvature of the electron-emitting portion is 0.02 μm, the aspect ratio of the plate-like particles is 5 to 25. This makes the average value of the aspect ratio of the conductive particles 5 or more, preferably 10
This is the basis for this.

The cold cathode field emission device or the cold cathode field emission display according to the first embodiment of the present invention, or the cold cathode field emission device according to the first to sixth embodiments of the present invention In the device manufacturing method, by configuring each electron-emitting portion from a plurality of conductive particles,
The surface of the electron-emitting portion may be in a state in which projections according to the particle size and shape of the conductive particles are generated. When a predetermined potential difference is applied between the cathode electrode and the gate electrode, the strength of the electric field formed in the opening increases near the protrusion, and therefore, most ideally, the electric field starts from the exposed portion of the conductive particles. Electrons may be emitted. In other words, each electron emitting portion is made up of a plurality of conductive particles, unlike the electron emitting portion of the conventional Spindt-type cold cathode field emission device in which electrons are emitted from only one tip portion for each electron emitting portion. Thereby, electrons can be emitted from a plurality of locations on the surface of each electron emitting portion.
Therefore, the value of the emission electron current with respect to the gate voltage can be easily increased without significantly miniaturizing the individual cold cathode field emission devices or significantly increasing the density of the cold cathode field emission devices. That is, the electron emission efficiency can be increased.

Alternatively, in the method of manufacturing the cold cathode field emission device according to the first to sixth aspects of the present invention, the step of forming the electron emission portion at the bottom of the opening is a so-called lift-off. -Can be composed of processes. That is, after covering the top layer and the side wall surfaces of the opening, and the region at the bottom of the opening where the electron emission portion is not formed with the release layer,
An electron emission portion forming layer is formed on the entire surface, and then a release layer is formed.
The electron emission portion can be formed at the bottom of the opening by removing the electron emission portion together with the portion of the electron emission portion forming layer on the release layer. Here, "top layer" refers to the gate electrode and the insulating layer, or alternatively, refers to the focusing electrode and the second insulating layer.

As a constituent material of the release layer, an organic polymer material such as a photoresist material commonly used in the field of manufacturing semiconductor devices can be exemplified. The release layer is
For example, after the formation of the opening is completed, a thin photoresist layer is formed on the entire surface by spin coating or blade coating, and the photoresist layer on the cathode electrode at the bottom of the opening or on the base is selectively removed. Can be formed. On the cathode electrode at the bottom of the opening and / or
Alternatively, when the photoresist layer on the base is selectively removed, the removed portion needs to be arranged on a concentric opening similar figure centering on the center of the opening. The electron emission portion forming layer is formed on the release layer and on the cathode electrode and / or the base exposed on the bottom surface of the opening. When the conductive composition described later is a liquid having appropriate viscosity and surface tension, the electron emission portion forming layer can be formed by, for example, a spin coating method. For example, if the planar shape of the opening is circular, the shape of the electron-emitting portion located at the center of the opening has a crown shape. In addition, other than the electron-emitting portion located at the center of the opening, the shape of the electron-emitting portion arranged on the concentric opening similar figure centering on the center of the opening may be continuous or discontinuous. (Ring shape). It is preferable that the top surface of the electron emission portion forming layer located in the removed portion of the photoresist layer is in a concave state. By forming the electron emission portion forming layer in such a shape, the electron emission end portion of the finally obtained electron emission portion has a sharp shape, and electrons can be emitted effectively. In other words, the crown-shaped or annular electron-emitting portion has a sharply steep edge,
A large number of conductive particles are exposed at the edge, and efficient electron emission can be expected. In the electron-emitting portion forming layer, when the conductive particles having a certain degree of shape uniformity tend to be oriented in a specific direction, the portion of the conductive particles exposed on the surface of the electron-emitting portion. It is possible to make the shapes and the protruding directions uniform to some extent.

The electron emission portion forming layer can be formed, for example, based on the above-mentioned conductive composition comprising the conductive particles and the binder. Incidentally, the conductive composition is not subjected to any treatment in a subsequent step, therefore, there may be a type that constitutes the electron emission portion without causing any composition change or structural change, but in many types, For example, by performing a heat treatment, the binder undergoes a change such as crosslinking, polymerization, or partial decomposition to form an electron emission portion. Glass and general-purpose resin can be used as the binder. The glass may be water glass. Examples of the general-purpose resin include a thermoplastic resin such as a vinyl chloride resin, a polyolefin resin, a polyamide resin, a cellulose ester resin, and a fluororesin, and a thermosetting resin such as an epoxy resin, an acrylic resin, and a polyester resin. The temperature of the heat treatment depends on the type of the binder contained in the conductive composition,
What is necessary is just to determine suitably. For example, when the binder is an inorganic material such as water glass, heat treatment may be performed at a temperature at which the inorganic material can be fired. When the binder is a thermosetting resin, the heat treatment may be performed at a temperature at which the thermosetting resin can be cured. However, in order to maintain the adhesion between the conductive particles, it is preferable to perform the heat treatment at a temperature at which the thermosetting resin does not excessively decompose or carbonize. Regardless of which binder is used, the heat treatment temperature needs to be a temperature at which damage or defects do not occur in the gate electrode, the cathode electrode, and the insulating layer. The heat treatment atmosphere is preferably an inert gas atmosphere so that the electrical resistivity of the gate electrode or the cathode electrode does not increase due to oxidation, or a defect or damage does not occur in the gate electrode or the cathode electrode. When a thermoplastic resin is used as a binder, heat treatment may not be required.

The dispersion medium which is a component of the conductive composition includes:
It may be a binder that can also serve as a dispersion medium like water glass, or may be water, or an organic solvent such as an alcohol, ether, ketone, ester, or hydrocarbon solvent. Is also good. That is, the binder is (1)
It may itself be a dispersion medium of conductive particles,
(2) The conductive particles may be coated, or (3) a dispersion medium of the conductive particles may be formed by dispersing or dissolving in an appropriate solvent. A typical example of the case (3) is water glass, which is described in Japanese Industrial Standard (JIS) K140.
Nos. 1 to 4 specified in No. 8 or equivalents thereof can be used. Nos. 1 to 4 are four-grade grades based on the difference in the number of moles (about 2 to 4 moles) of silicon oxide (SiO ₂ ) with respect to 1 mole of sodium oxide (Na ₂ O) as a constituent of water glass. , Each greatly differ in viscosity. Therefore, when using water glass in the lift-off process, in consideration of various conditions such as the type and content of the conductive particles to be dispersed in the water glass, affinity with the release layer, and the aspect ratio of the opening, It is preferred to select the optimal grade of water glass or to prepare and use water glass equivalent to these grades. Alternatively, water glass containing K ₂ O as a main component can be used.

Since the binder is generally poor in conductivity, if the content of the binder is too large relative to the content of the conductive particles in the conductive composition, the electric resistance of the electron-emitting portion formed increases, There is a concern that electron emission may not be performed smoothly.
Therefore, for example, taking as an example a conductive composition formed by dispersing carbon-based material particles as conductive particles in water glass, the ratio of the carbon-based material particles to the total weight of the conductive composition is:
In consideration of the electric resistance of the electron-emitting portion, the viscosity of the conductive composition, the properties such as the adhesion between the conductive particles, and the like, it is preferable to select approximately 30 to 95% by weight. By selecting the ratio of the carbon-based material particles within this range, it is possible to sufficiently reduce the electric resistance of the electron-emitting portion to be formed and to maintain good adhesion between the carbon-based material particles. However, when the alumina particles are mixed with the carbon-based material particles as the conductive particles, the adhesiveness between the conductive particles tends to decrease. It is preferable to increase the ratio, 6
It is particularly preferred that the content be 0% by weight or more. The conductive composition may include a dispersant for stabilizing the dispersion state of the conductive particles, and additives such as a pH adjuster, a drying agent, a curing agent, and a preservative. Note that a conductive composition obtained by dispersing a powder in which conductive particles are covered with a coating of a binder (binder) in an appropriate dispersion medium may be used. Note that the binder exposed on the surface of the electron-emitting portion may be removed by etching.

Incidentally, carbon particles were used (specifically,
The electron emission portion forming layer can be formed by electrophoresis (using an ammonia solution in which carbon particles are dispersed as an electrolytic solution), or the electron emission portion forming layer can be formed by a photosensitive paste method or a screen printing method. It can also be formed.

Alternatively, the cold cathode field emission device or the cold cathode field emission display device according to the second aspect of the present invention, or the cold cathode field emission devices according to the seventh to eleventh aspects of the present invention. In the method of manufacturing an emission element, a plurality of electron emission portions made of a carbon-based thin film are formed on a carbon-based thin film selective growth region. Here, the carbon-based thin film is preferably made of graphite having crystallinity. The graphite having crystallinity is composed of graphite having sp ² bonds, and is a single-walled carbon nanotube having a structure in which a single-layer carbon graphite sheet is wound, or a carbon-graphite sheet in which two or more layers are wound. This is a so-called carbon nanotube having a structure. Alternatively, it is composed of carbon nanofibers on which carbon graphite sheets are stacked, or carbon nanotubes or carbon nanofibers in which amorphous carbon is deposited (adhered) around the carbon nanofibers. A carbon atom having an sp ² bond usually forms a six-membered ring from six carbon atoms, and a collection of these six-membered rings forms a carbon graphite sheet. What has a tube structure in which the carbon graphite sheet is wound is a carbon nanotube. On the other hand, carbon nanofibers are formed by overlapping carbon graphite fragments without being wound with carbon graphite sheets and forming carbon fibers. In some cases, it may also have a conical shape. The structure of the electron-emitting portion depends on the formation conditions in the chemical vapor deposition (CVD) method, the material forming the carbon-based thin film selective growth region, and the like. Although the electron-emitting portion is macroscopically composed of a carbon-based thin film, microscopically, a plurality of electron-emitting portions composed of carbon nanotubes and carbon nanofibers are provided in one carbon-based thin film selective growth region. Are formed, or a plurality of electron emitting portions having a conical shape are formed. The electron emission portion is selectively formed on the carbon-based thin film selective growth region,
It is not formed on the gate electrode or the cathode electrode.

As materials constituting the carbon-based thin film selective growth region, nickel (Ni), molybdenum (Mo), titanium (Ti), chromium (Cr), cobalt (Co), tungsten (W), zirconium (Zr), Tantalum (T
a), iron (Fe), copper (Cu), platinum (Pt), zinc (Zn), germanium (Ge), tin (Sn), lead (P
b), bismuth (Bi), silver (Ag), gold (Au), indium (In), manganese (Mn), palladium (P
At least one metal selected from the group consisting of d) and thallium (Tl), or a metal compound or alloy containing these elements can be used. Further, other than the above-mentioned metals, metals, metal compounds, and alloys having a catalytic action in an atmosphere for forming (synthesizing) the electron-emitting portion can be used.

Examples of the method for forming the carbon-based thin film selective growth region include a plating method including a physical vapor deposition method (PVD method), a chemical vapor deposition method (CVD method), an electrolytic plating method and an electroless plating method. be able to. Here, as the PVD method, various vacuum evaporation methods such as electron beam heating method, resistance heating method, flash evaporation, plasma evaporation method, bipolar sputtering method, DC sputtering method, DC magnetron sputtering method, high frequency sputtering method, magnetron sputtering method , Ion beam sputtering, various sputtering methods such as bias sputtering, DC (direct current) method, RF method, multi-cathode method, activation reaction method, electric field evaporation method, high frequency ion plating method, reactive ion plating method And other various ion plating methods.

Alternatively, as a method of forming a carbon-based thin film selective growth region, for example, a region other than a region where a carbon-based thin film selective growth region is to be formed is covered with an appropriate material (for example, a mask layer). After a layer composed of a solvent and metal particles is formed on the surface of the region where the carbon-based thin film selective growth region is to be formed, the solvent is removed to leave the metal particles. Alternatively, as a method of forming the carbon-based thin film selective growth region, for example, the metal particles may be coated in a state in which a region other than the region where the carbon-based thin film selective growth region is to be formed is covered with an appropriate material (for example, a mask layer). After the metal compound particles containing the constituent metal atoms are adhered to the surface of the region, the metal compound particles are decomposed by heating, so that the carbon-based thin film selective growth region (a type of collection of metal particles). Can be formed in such a region. In this case, specifically, a method of forming a layer composed of a solvent and metal compound particles on the surface of a region where the carbon-based thin film selective growth region is to be formed, and then removing the solvent and leaving the metal compound particles is exemplified. Can be. The metal compound particles are at least one selected from the group consisting of halides (for example, iodides, chlorides, bromides, etc.), oxides, hydroxides, and organic metals that constitute the carbon-based thin film selective growth region.
It is preferred to consist of different types of materials. In these methods, at an appropriate stage, a material (for example, a mask layer) covering a region other than a region where a carbon-based thin film selective growth region is to be formed is removed.

Alternatively, the carbon-based thin film selective growth region may be formed of an organometallic compound thin film. In this case, the organometallic compound thin film is made of zinc (Zn), tin (S
n), an organic metal compound containing at least one element selected from the group consisting of aluminum (Al), lead (Pb), nickel (Ni), and cobalt (Co). And more preferably a complex compound. Here, acetylacetone, hexafluoroacetylacetone, dipivaloylmethanate, and cyclopentadienyl can be exemplified as ligands constituting the complex compound.
The formed organometallic compound thin film may partially contain a decomposition product of the organometallic compound. The step of forming the carbon-based thin film selective growth region composed of the organometallic compound thin film can include a step of forming a layer composed of the organometallic compound solution on the region where the carbon-based thin film selective growth region is to be formed. Alternatively, the method may comprise a step of sublimating the organometallic compound and then depositing the organometallic compound on a region where the carbon-based thin film selective growth region is to be formed.

It is preferable that an electron emitting portion made of a carbon-based thin film is selectively formed on the carbon-based thin film selective growth region based on a chemical vapor deposition method (CVD method). It is preferable to use a combination of a hydrocarbon gas and a hydrogen gas as a source gas in the CVD method. Here, methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), butane (C ₄ H ₁₀ ), ethylene (C
₂ H _4), acetylene (C ₂ H ₂₎ hydrocarbon gas or a mixed gas thereof, such as methanol, ethanol, acetone,
Gases obtained by vaporizing benzene, toluene, xylene, naphthalene, and the like can be given. In order to stabilize discharge and promote plasma dissociation, a diluting gas such as helium (He) or argon (Ar) may be mixed, or a doping gas such as nitrogen or ammonia may be mixed. Is also good. When a combination of a hydrocarbon gas and a hydrogen gas is used, the flow rate of the hydrocarbon gas relative to the total flow rate of the hydrocarbon gas and the hydrogen gas may be 1% to 50%, preferably 5% to 50%. desirable. Here, the hydrogen gas plays a role of removing (a kind of etching) crystal grains having poor crystallinity among the crystal grains constituting the formed carbon-based thin film.

In this CVD method, the plasma density is 10 ¹⁶ m while a bias voltage is applied to the support.
^-3 (10 ⁷ mm ^-3 ) or more, preferably 10 ¹⁷ m ^-3 (10 ⁸
mm ^-3 ) or more, more preferably 10 ¹⁹ m ^-3 (10 ¹⁰ mm)
^-3 ) Based on the plasma CVD method under the above conditions, it is preferable from the viewpoint of increasing the degree of dissociation of the source gas used for forming the electron emitting portion and reliably forming the electron emitting portion. Alternatively, the CVD method for forming the electron-emitting portion is such that the electron temperature is 1 to 15 eV, preferably 5 eV to 15 eV, and the ion current density is 0.1 mA / cm ² while a bias voltage is applied to the support. to 30 mA / cm ^2, preferably be based on a plasma CVD method conditions 5 mA / cm ² to 30 mA / cm ^2, a higher degree of dissociation of the material gas used for the electron-emitting region, reliably formed electron emitting portion It is preferable from the viewpoint of doing. In these cases, microwave plasma CV is used as a plasma CVD method.
D method, transformer coupled plasma CVD method, inductively coupled plasma CVD method, electron cyclotron resonance plasma CV
Examples include D method, helicon wave plasma CVD method, capacitively coupled plasma CVD method, and CVD method using a parallel plate type CVD apparatus. Alternatively, a hot filament CVD method may be employed. In some cases, thermal CVD
A law may be adopted. It is desirable that the heating temperature of the support in the step of forming the electron-emitting portion be 600 ° C. or lower, preferably 500 ° C. or lower, more preferably 400 ° C. or lower, more preferably 300 ° C. or lower. The lower limit of the support heating temperature may be a temperature at which an electron-emitting portion can be formed.

In the present invention, the cathode electrode is made of a refractory metal such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium (Cr), or aluminum (Al). ), Metals such as copper (Cu), alloys of these refractory metals and metals such as Al-Nd and Mo-Ta, and compounds of these refractory metals and metals (for example, nitrides such as TiN, WSi ₂ , MoS
It can be formed using a transparent conductive material such as i ₂ , a silicide such as TiSi ₂ or TaSi ₂ ), a carbon-based material, or ITO (indium tin oxide). The gate electrode and the focusing electrode are made of tungsten (W), niobium (N
b), a metal layer of tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), silver (Au), aluminum or the like, or a metal element containing these metal elements Alloy layer (for example, Al-Nd, M
o-Ta), or a compound layer (for example, nitride such as TiN, or silicide such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), a semiconductor layer such as silicon containing impurities, a carbon-based material, or ITO ( It can be formed using a transparent conductive material such as indium and tin oxide.

In the case of forming a carbon-based thin film, the material constituting the cathode electrode, the gate electrode and the focusing electrode and the material constituting the carbon-based thin film selective growth region are formed on the cathode electrode, the gate electrode and the focusing electrode. It is preferable that the materials be different from the viewpoint that the electron emission portion is not formed. Alternatively, the cathode electrode, the gate electrode, and the focusing electrode may be formed from a material that does not form a carbon-based thin film under the CVD conditions for forming the electron-emitting portion by the CVD method.

In order to further ensure the selective growth of the electron-emitting portion on the carbon-based thin film selective growth region, oxides (so-called natural oxide films) on the surface of the carbon-based thin film selective growth region are removed. Is also good. The oxide is removed by, for example, a plasma reduction process based on a microwave plasma method, a trans-coupled plasma method, an inductively-coupled plasma method, an electron cyclotron resonance plasma method, an RF plasma method, or the like in a hydrogen gas atmosphere or an ammonia gas atmosphere, argon. It is desirable to carry out the sputtering process in a gas atmosphere or the cleaning process using an acid such as hydrofluoric acid or a base.

In the cold-cathode field emission display according to the first or second embodiment of the present invention, the structure of the anode panel is as follows. A configuration in which an anode electrode is formed on the entire surface and a phosphor layer having a predetermined pattern is provided on the anode electrode; a phosphor layer having a predetermined pattern is provided on a substrate in an effective area; A configuration in which an anode electrode also serving as a metal back film is provided on the entire surface of the substrate can be given. In the above structure, a so-called metal back film electrically connected to the anode electrode may be formed on the phosphor layer. In the configuration of
A metal back film may be formed on the anode electrode.

Depending on the configuration of the cold cathode field emission display, the anode may be an anode in which the effective area is covered with one sheet of conductive material,
The anode electrode may be of a type in which one or a plurality of electron-emitting portions or anode electrode units corresponding to one or a plurality of pixels are assembled, or may be a striped anode electrode.

Further, the material of the anode electrode in the cold cathode field emission display according to the first or second embodiment of the present invention may be selected according to the configuration of the display. That is, when the cold cathode field emission display is a transmission type (the substrate corresponds to an image display unit) and the anode electrode and the phosphor layer are laminated on the substrate in this order, the anode electrode In addition to the substrate on which is formed, the anode electrode itself must be transparent, and a transparent conductive material such as ITO (indium tin oxide) is used. on the other hand,
In the case where the cold cathode field emission display is of a reflection type (the support corresponds to an image display unit), and even in the case of a transmission type, a phosphor layer and an anode electrode are laminated in this order on a substrate. In this case, in addition to ITO, the above-described materials related to the cathode electrode and the gate electrode can be appropriately selected and used.

For forming the cathode electrode, the gate electrode, and the anode electrode, known processes such as a CVD method, an evaporation method, a coating method, a sputtering method, and a screen printing method can be applied depending on the constituent materials. CVD method, evaporation method,
In the coating method and the sputtering method, a material layer constituting the cathode electrode and the gate electrode is formed over the entire surface,
Patterning of the cathode electrode and the gate electrode may be performed by a lift-off process, or may be performed by a photolithography technique and an etching technique. In a printing method such as a screen printing method, the final pattern of the cathode electrode and the gate electrode can be obtained in a single process. Can be formed.
Regarding the formation of the opening in the manufacturing method of the present invention, the expression that the opening is formed `` at least '' in the insulating layer, because the opening may be formed simultaneously by the screen printing method as described above, This is because it is not always necessary to form an opening in the gate electrode.

The insulating layer and the second insulating layer are made of SiO ₂ , Si
N, SiON, or a cured glass paste can be used alone or can be appropriately laminated. The constituent materials of the insulating layer and the second insulating layer may be the same or different from each other. In order to form the insulating layer, a CVD method, a coating method, a sputtering method,
A known process such as a screen printing method can be used.

When a base is formed between the support and the cathode electrode, the base may be made of a conductive material, an insulating material (for example, Si
O ₂ or SiN, may be formed from any insulating material) such as SiON. On the other hand, when forming a base on a cathode electrode, the base needs to be formed from a conductive material. In the latter case, the base may be made of a high-resistance material. This makes it possible to stabilize the operation of the cold cathode field emission device and to make the electron emission characteristics uniform. Examples of the high-resistance material include carbon-based materials such as silicon carbide (SiC), semiconductor materials such as SiN and amorphous silicon, and ruthenium oxide (RuO).
₂ ), high melting point metal oxides such as tantalum oxide and tantalum nitride can be exemplified, and the resistance value is approximately 1 × 10 ⁵ to
It may be 1 × 10 ⁷ Ω, preferably several MΩ. Examples of the method for forming the base include a combination of a sputtering method, a CVD method, and an etching method, a screen printing method, and a lift-off method.

Alternatively, the structure of the cathode electrode may be a single-layer structure of a conductive material layer, a lower conductive material layer, a resistor layer formed on the lower conductive material layer, and a resistor layer formed on the resistor layer. It is also possible to have a three-layer structure of the upper conductive material layer formed. In the latter case, a carbon-based thin film selective growth region is formed on the surface of the upper conductive material layer. Alternatively, the cathode electrode may have a two-layer structure of a conductive material layer and a resistor layer formed on the conductive material layer. Thus, by providing the resistor layer, the electron emission characteristics of the electron emission portion can be made uniform. As a material forming the resistor layer, a carbon-based material such as silicon carbide (SiC), a semiconductor material such as SiN or amorphous silicon,
Examples thereof include high melting point metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride. As a method of forming the resistor layer, a sputtering method, a CVD method,
And a screen printing method. The resistance value may be approximately 1 × 10 ⁵ to 1 × 10 ⁷ Ω, preferably several MΩ.

As the phosphor constituting the phosphor layer, a phosphor for high-speed electron excitation or a phosphor for low-speed electron excitation can be used. When the cold cathode field emission display is a monochromatic display, the phosphor layer may not be particularly patterned. When the cold cathode field emission display is a color display, phosphor layers corresponding to the three primary colors of red (R), green (G), and blue (B) patterned in stripes or dots are alternately arranged. It is preferable to arrange them in
The gap between the patterned phosphor layers may be filled with a black matrix for the purpose of improving the contrast of the display screen.

Examples of the substrate on which the anode electrode is formed include a glass substrate, a glass substrate having an insulating layer formed on the surface thereof, a quartz substrate, and a quartz substrate having an insulating layer formed on the surface. It is preferable to use a substrate and a glass substrate having a surface on which an insulating film is formed, from the viewpoint of reducing manufacturing costs. Further, the support on which the cathode electrode is formed only needs to have at least a surface formed of an insulating member. Examples thereof include a quartz substrate and a semiconductor substrate having an insulating film formed on a surface thereof. Among them, a glass substrate and a glass substrate having an insulating film formed on a surface are preferably used from the viewpoint of reduction in manufacturing cost. Note that the substrate and the support are
They may be made of the same material or different materials.

When a display device is manufactured by bonding a substrate (anode panel) on which an anode electrode and a phosphor layer are formed and a support (cathode panel) on which a cold cathode field emission device is formed at a peripheral portion. , The periphery may be bonded by frit glass or a low melting metal material,
Alternatively, they may be bonded via a frame. The space between the substrate and the support after bonding is approximately 10 ⁻² Pa
, Or higher (ie, lower pressure). When the frame is used, the adhesion between the frame and the substrate and the adhesion between the frame and the support can be performed using frit glass or a low-melting metal material. The “low melting point” of the low melting point metal material generally refers to a temperature range of 400 ° C. As the low melting point metal material, In (indium: melting point: 157 ° C.); an indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220-370 ° C), Sn ₉₅
Cu ₅ (melting point 227 to 370 ° C) such as tin (Sn) based high-temperature solder; Pb _97.5 Ag _2.5 (melting point 304 ° C), Pb
_94.5 Ag _5.5 (melting point 304-365 ° C), Pb _97.5 A
lead (Pb) -based high-temperature solder such as g _1.5 Sn _1.0 (melting point 309 ° C.); zinc (Z) such as Zn ₉₅ Al ₅ (melting point 380 ° C.)
n) based high-temperature solder; Sn ₅ Pb ₉₅ (melting point 300 to 314
゜ C), tin-lead standard solder such as Sn ₂ Pb ₉₈ (melting point 316３322 ° C.); Au ₈₈ Ga ₁₂ (melting point 381 ° C.)
(All of the above subscripts represent atomic%). Such a low-melting metal material is less likely to degas compared to frit glass, so that the degree of vacuum in the space surrounded by the frame, the support, and the substrate is maintained for a long time,
This is suitable for extending the life of the display device.

When the three members of the substrate, the support and the frame are joined, the three members may be joined simultaneously, or in the first step, either the substrate or the support and the frame are joined. The bonding may be performed first, and the rest of the substrate or the support and the frame may be bonded in the second stage. If the three-member simultaneous bonding and the bonding in the second stage are performed in a high vacuum atmosphere, the space surrounded by the substrate, the support, the frame, and the adhesive layer becomes a vacuum layer at the same time as the bonding. Alternatively, after the joining of the three members, a space surrounded by the substrate, the support, the frame, and the adhesive layer may be evacuated to form a vacuum layer. When evacuation is performed after the bonding, the pressure of the atmosphere at the time of the bonding may be either normal pressure or reduced pressure. The gas constituting the atmosphere may be air, nitrogen gas, or group 0 of the periodic table. May be an inert gas containing a gas belonging to (for example, Ar gas).

When the gas is exhausted after the bonding, the gas can be exhausted through a chip tube previously connected to the substrate and / or the support. The chip tube is typically constructed using a glass tube, and the substrate and / or the inactive area of the support (ie,
Around a through hole provided in an area other than an effective area functioning as a display screen), it is joined using frit glass, and after the space reaches a predetermined degree of vacuum, it is sealed off by heat fusion. Note that if the entire cold cathode field emission display is once heated and cooled before sealing is performed, the residual gas can be released into the space. This is preferable because

In the present invention, it is preferable that the outer shape of the gate electrode is a stripe shape and the outer shape of the cathode electrode is a stripe shape. The extending directions of the striped cathode electrode and the striped gate electrode are different. It is desirable. It is more preferable that the projected image of the striped cathode electrode and the projected image of the striped gate electrode are orthogonal to each other from the viewpoint of simplifying the structure. Note that a plurality of cold cathode electric fields are formed in an overlapping area where the projected images of the striped cathode electrode and the striped gate electrode overlap (an electron emission area, which corresponds to one pixel area or one subpixel area). An electron-emitting device is provided, and such overlapping areas (gate electrode / cathode electrode overlapping areas) are usually arranged in a two-dimensional matrix in an effective area (area functioning as an actual display portion) of the cathode panel. ing. A relatively negative voltage is applied to the cathode electrode, a relatively positive voltage is applied to the gate electrode, and a higher positive voltage is applied to the anode electrode than the gate electrode. Selectively from a plurality of electron-emitting portions located in a gate electrode / cathode electrode overlap region of a column-selected cathode electrode and a row-selected gate electrode (or a row-selected cathode electrode and a column-selected gate electrode). Then, electrons are emitted into the vacuum space, and the electrons are attracted to the anode electrode and collide with the phosphor layer constituting the anode panel, thereby exciting and emitting light from the phosphor layer.

[0091]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on embodiments of the present invention (hereinafter, abbreviated as embodiments).

(Embodiment 1) Embodiment 1 is directed to a cold cathode field emission device (hereinafter abbreviated as "field emission device") according to the first aspect of the present invention, and a cold cathode incorporating such a field emission device. 1. Field of the Invention The present invention relates to a field emission display (hereinafter, abbreviated as a display) and a method for manufacturing the field emission device according to the first embodiment of the present invention for manufacturing the field emission device. FIG. 1A is a schematic partial end view of the field emission device of the first embodiment, and FIG. 1B is a schematic partial plan view of the field emission device according to the first embodiment. FIG. 2 is a schematic perspective view in which a part of the element is cut away. FIG. 3 is a schematic partial end view of the display device according to the first embodiment, and FIG. 4 is a schematic partial perspective view of the display device exploded. In FIG. 1B, each component is hatched to clarify each component of the field emission device.

The field emission device according to the first embodiment includes (A) the cathode electrode 11 formed on the support 10, (B) the insulating layer 1 formed on the support 10 and the cathode electrode 11.
2. (C) gate electrode 13 formed on insulating layer 12;
(D) Openings 14 formed in gate electrode 13 and insulating layer 12 and (E) Pluralities formed on the portion of cathode electrode 11 located at the bottom of opening 14 (in the first embodiment, (Two) electron-emitting portions 15A and 15B. The plurality of electron emitting portions 15A and 15B are arranged on a concentric opening similar figure centering on the center of the opening 14, and the height of the electron emitting ends 15a and 15b of each of the electron emitting portions 15A and 15B. The height is higher as the electron-emitting portion is located closer to the center of the opening 14 with reference to the flat surface of the support 10.

In the first embodiment, the plane shape of the opening is circular, and the figure similar to the opening is a circle similar to the plane shape of the opening. The shape of the electron-emitting portion 15A located at the center of the opening has a crown shape with a diameter of about 3 μm, and is arranged on a concentric opening similar figure centering on the center of the opening. The shape of the electron emitting portion 15B is
It is a continuous ring (ring shape) with an inner diameter of 10 μm, an outer diameter of 16 μm, and a width of 3 μm.

In the first embodiment, the thickness of the portion of the cathode electrode 11 located at the bottom of the opening 14 is larger as the portion is closer to the center of the opening 14. The thick portion of the cathode electrode 11 is called a raised portion 11A. In the first embodiment, the raised portion 11A is
Ridge 11 when cut in a virtual plane perpendicular to 0
The cross-sectional shape of A was a trapezoid.

The display device according to the first embodiment has a structure in which the cathode panel CP and the anode panel AP face each other with a vacuum layer interposed therebetween. The cathode electrode 11 and the gate electrode 13 are formed such that projected images of these two electrodes are formed in a stripe shape in a direction orthogonal to each other, and a region (one pixel) in which the projected images of these two electrodes overlap. In general, a plurality of field emission devices are arranged in the electron emission region. Further, such electron emission regions are usually arranged in a two-dimensional matrix in an effective region (a region functioning as an actual display screen) of the cathode panel CP.

A plurality of field emission devices are formed on the cathode panel CP. On the other hand, the anode panel AP
A substrate 20 and a phosphor layer 21 formed on the substrate 20 and formed according to a predetermined pattern (a red light-emitting phosphor layer 21R,
Green light emitting phosphor layer 21G, blue light emitting phosphor layer 21B)
And an anode electrode 22 (made of an aluminum thin film) covered with the phosphor layer 21. One pixel is
A group of field emission devices arranged in a predetermined number in an overlapping area of the cathode electrode 11 and the gate electrode 13 on the cathode panel CP side, and a phosphor layer 21 and an anode on the anode panel AP side facing the group of these field emission devices. And an electrode 22 (corresponding to an electron irradiation surface). In the effective area, such pixels are arranged, for example, in the order of several hundred thousand to several million. A so-called black matrix may be formed between the phosphor layers.

Anode panel AP and cathode panel CP
Are arranged such that the field emission element and the phosphor layer 21 face each other, and are joined via a frame (not shown) at a peripheral portion, whereby a display device can be manufactured.
A through-hole (not shown) for evacuation is provided in an ineffective area surrounding the effective area and a peripheral circuit for selecting a pixel is formed. The connected tip tube (not shown) is connected. That is, the space surrounded by the anode panel AP, the cathode panel CP, and the frame is in a vacuum.

A relative negative voltage is applied to the cathode electrode 11 from a cathode electrode control circuit (not shown), and a relative positive voltage is applied to the gate electrode 13 from a gate electrode control circuit (not shown). A positive voltage higher than that of the gate electrode 13 is applied to the anode electrode 22 from an anode electrode control circuit (not shown). When performing display in such a display device, for example, a video signal is input to the cathode electrode 11 from the cathode electrode control circuit, and the gate electrode 13
, A control signal is input from the gate electrode control circuit. Due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, electrons are emitted from the electron emitting portions 15A and 15B based on the quantum tunnel effect. Impacts layer 21. As a result, the phosphor layer 21 is excited to emit light, and a desired image can be obtained.

Hereinafter, a method of manufacturing the field emission device and the display device according to the first embodiment will be described with reference to FIGS. 5 and 6 which are schematic partial end views of the support and the like.

[Step-100] First, the cathode electrode 11 is formed on the support 10. At this time, the thickness of the portion of the cathode electrode 11 corresponding to the portion where the opening is to be formed in a later step is increased as the portion is closer to the center of the opening. Specifically, for example, on a support 10 made of a glass substrate,
For example, a cathode electrode conductive material layer 11 'made of chromium (Cr) is formed by a sputtering method. Next, a mask layer 31 is formed at the center of the portion of the cathode electrode 11 corresponding to the portion where the opening is to be formed in a later step (FIG. 5).
(A)). The formation of the mask layer 31 can be performed by a photolithography technique using a resist material.

Thereafter, using the mask layer 31 as an etching mask, the conductive material layer for cathode electrode 11 ′ is etched based on the reactive ion etching method (RIE method). By optimizing the etching conditions, the raised portion 11A can be formed at the center of the portion of the cathode electrode 11 corresponding to the portion where the opening is to be formed in a later step. After that, the mask layer 31 is removed, and the cathode electrode conductive material layer 11 'is patterned in a stripe shape based on a photolithography technique and an etching technique, whereby the stripe-shaped cathode electrode 11 can be formed (FIG. 5). (B)). The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-110] Next, the insulating layer 12 is formed on the support 10 and the cathode electrode 11. More specifically, for example, a thickness of about 1 μm is
m of insulating layers 12 are formed. However, the thickness of the insulating layer 12 is not limited to such a value.

[Step-120] Thereafter, the gate electrode 13 is formed on the insulating layer 12. Specifically, after a gate electrode conductive material layer made of chromium (Cr) for forming a gate electrode is formed on the insulating layer 12 by a sputtering method, the patterned etching is performed on the gate electrode conductive material layer. A gate mask (not shown) is formed, the conductive material layer for the gate electrode is etched using the etching mask, the conductive material layer for the gate electrode is patterned in a stripe shape, and then the etching mask is removed.
Next, an etching mask (not shown) patterned on the conductive material layer for the gate electrode and the insulating layer 12 is formed, and the conductive material layer for the gate electrode is etched using the etching mask. 12 is etched. Thus, a gate electrode 13 in the form of a stripe can be obtained on the insulating layer 12, and further, an opening 14 (planar shape is circular) penetrating the gate electrode 13 and the insulating layer 12 can be obtained (FIG. 5 (C)).
At the bottom of the opening 14, the cathode electrode 11 (more specifically, the raised portion 11A) is exposed. The striped gate electrode 13 extends in a direction different from that of the cathode electrode 11 (for example, in a direction perpendicular to the plane of the drawing of the drawing). The opening 1
4 had a diameter of about 20 μm.

[Step-130] Next, a plurality of (two in the first embodiment) electron emitting portions are arranged so as to be arranged on the concentric opening similar figure centering on the center of the opening portion 14. 15A and 15B are formed on the cathode electrode 11 exposed at the bottom of the opening 14 (more specifically, on the raised portion 11A). Specifically, for example, after a novolak-type positive photoresist layer 32 'is formed on the entire surface by spin coating (see FIG. 6A), the opening 14 is formed using an exposure mask and exposure light. Cathode electrode 11 at the bottom
The upper photoresist layer 32 ′ is selectively exposed, and then the photoresist layer 32 ′ is developed using an alkali developing solution, thereby forming the photoresist layer 32 ′ on the cathode electrode 11 at the bottom of the opening 14. Selectively remove. Thus, the uppermost layer (the insulating layer 12 and the gate electrode 1)
3), the side wall surface of the opening 14, and the bottom of the opening 14 where the electron emission portion is not formed can be covered with the release layer 32 (see FIG. 6B). The opening 14
The area where the electron emission portion is to be formed at the bottom of
A and 32B, the plane shape of the region 32A is a circle with a diameter of about 3 μm, and the plane shape of the region 32B is
It is a continuous ring (ring shape) with 0 μm, outer diameter of 16 μm, and width of 3 μm.

[Step-140] Next, the electron emission portion forming layer 33 is formed on the entire surface. Specifically, a conductive composition composed of plate-like conductive particles of graphite having an average diameter of 0.5 μm and an average thickness of 0.02 μm, and water glass is applied by spin coating to the entire surface. The electron emission portion forming layer 33 can be formed on the entire surface (FIG. 6).
(C)). Next, the electron emission portion forming layer 33 is dried. At this time, the conductive particles are in the regions 32A and 32B.
The long axis of the conductive particles is oriented along the side wall of the release layer 32 in the direction crossing the electron irradiation surface (anode electrode). More specifically, the plate-shaped conductive particles have a diameter direction substantially parallel to a normal line of the support 10. Thereafter, the binder is pre-baked, and then the release layer 32 is formed on the release layer 32 using an alkaline solution.
When removed together with the portion, the field emission device shown in FIG. 1 can be obtained. After that, it is preferable to perform high-pressure spray cleaning using pure water, and finally perform firing of the binder.

[Step-150] Thereafter, the display device is assembled. Specifically, the anode panel AP and the cathode panel C are arranged such that the phosphor layer 21 and the field emission device face each other.
P, an anode panel AP and a cathode panel C
P (more specifically, the support 10 and the substrate 20) are joined at a peripheral edge portion via a frame (not shown). At the time of joining, frit glass is applied to a joint portion between the frame body and the anode panel AP and a joint portion between the frame body and the cathode panel CP, and the anode panel AP, the cathode panel CP, and the frame are bonded together and pre-baked. After the frit glass is dried, the main firing is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, the frame, and the adhesive layer (not shown) is evacuated through through holes (not shown) and chip tubes (not shown), and the pressure of the space is reduced. Reaches about 10 ^-4 Pa, the tip tube is sealed off by heating and melting. Thus, the space surrounded by the anode panel AP, the cathode panel CP, and the frame can be evacuated. After that, wiring to necessary external circuits is performed to complete the display device.

(Embodiment 2) Embodiment 2 relates to a method for manufacturing a field emission device according to the second aspect of the present invention.
The structure of the field emission device manufactured by the manufacturing method of the second embodiment is substantially the same as that of the field emission device shown in FIG. Hereinafter, a method for manufacturing the field emission device of the second embodiment will be described with reference to FIG. 7 which is a schematic partial end view of the support and the like.

[Step-200] First, the cathode electrode 11 is formed on the support 10. Specifically, after a cathode electrode conductive material layer made of, for example, chromium (Cr) is formed on a support 10 made of, for example, a glass substrate by a sputtering method, a stripe-shaped conductive material layer is formed by a photolithography technique and a dry etching technique. Cathode electrode 11
Is formed on the support 10. Next, the insulating layer 12 is formed on the support 10 and the cathode electrode 11 in the same manner as in [Step-110] and [Step-120] of the first embodiment.
Further, a gate electrode 13 is formed on the insulating layer 12, and an opening 14 (having a circular shape in plan view) where the cathode electrode 11 is exposed at the bottom is formed in the gate electrode 13 and the insulating layer 12. Thus, the structure shown in FIG. 7A can be obtained.

[Step-210] Thereafter, the thickness of the portion of the cathode electrode 11 exposed at the bottom of the opening 14 is increased as the portion closer to the center of the opening 14 is increased. Specifically, for example, after a photoresist layer is formed on the entire surface by spin coating, a mask layer 34 made of a photoresist layer is selected on the cathode electrode 11 at the center of the bottom of the opening 14 based on the photolithography technique. (See FIG. 7B). Thereafter, using the mask layer 34 as an etching mask, the portion of the cathode electrode 11 exposed at the bottom of the opening 14 is etched. As a result, the thickness of the portion of the cathode electrode 11 covered with the mask layer 34 is reduced to the thickness of the cathode electrode 11 exposed at the bottom of the opening 14.
As a result, the thickness of the portion of the cathode electrode 11 exposed at the bottom of the opening 14 can be increased as the portion closer to the center of the opening 14 increases. 7 (C)). It should be noted that FIG.
In the figure, the portion of the cathode electrode 11 located at the center of the opening 14 is represented by a raised portion 11A. The planar shape of the raised portion 11A is circular. In the second embodiment, the thickness of the cathode electrode 11 located at the bottom of the opening 14 changes stepwise.

[Step-220] Thereafter, the same steps as those of [Step-130] and [Step-140] of the first embodiment are performed, that is, concentric with the center of the opening 14 as a center. So that it is placed on the similar figure of the opening,
The field emission device can be completed by forming a plurality of electron emission portions on the cathode electrode 11 exposed at the bottom of the opening. Further, [Step-1 of Embodiment 1]
50], the display device can be completed.

(Embodiment 3) Embodiment 3 relates to a method for manufacturing a field emission device according to the third aspect of the present invention.
The structure of the field emission device manufactured by the manufacturing method of the third embodiment is substantially the same as that of the field emission device shown in FIG. Since it is the same as the emission element, detailed description is omitted. Hereinafter, a method for manufacturing the field emission device according to the third embodiment will be described with reference to FIG. 8 which is a schematic partial end view of the support and the like.

[Step-300] First, the substrate was
At this time, the opening is formed in a later step.
The base 4 is placed on the part of the support 10 corresponding to the part to be formed.
0 and the thickness of the base 40 is adjusted to the center of the opening.
The part closer to is thicker. Specifically, SiO _TwoConsists of
Base forming material layer 40 ′ on support 10 by CVD method.
Form. Note that the base forming material layer 40 ′ is made of SiN or Si.
It can also be configured from ON. Then, in a later process
In the portion of the support 10 corresponding to the portion forming the opening
A mask layer 41 is formed above the central portion (see FIG. 8A).
See). The mask layer 41 is formed by using a resist material
It can be performed by photolithography technology. That
Then, using the mask layer 41 as an etching mask,
The base forming material layer 40 'is etched based on the RIE method.
You. By optimizing the etching conditions,
Of the support 10 corresponding to the portion forming the opening at the end
A base 40 comprising a base forming material layer 40 '
(See FIG. 8B). Base 40
Has a circular planar shape.

[Step-310] After that, a cathode electrode conductive material layer made of, for example, chromium (Cr) is formed by a sputtering method, and the stripe-shaped cathode electrode 11 is supported by a photolithography technique and a dry etching technique. It is formed on the body 10 and the base 40 (see FIG. 8C). The striped cathode electrode 1
Reference numeral 1 extends in the left-right direction of the drawing.

[Step-320] Thereafter, the same steps as those of [Step-110] to [Step-140] of the first embodiment are performed, that is, the insulating layer 12 is formed on the cathode electrode 11 and the support 10. Is formed, a gate electrode 13 is formed on the insulating layer 12, an opening 14 with a cathode electrode exposed at the bottom is formed in the gate electrode 13 and the insulating layer 12, and a central portion of the opening 14 is further formed. The field emission device can be completed by forming a plurality of electron emission portions on the cathode electrode 11 exposed at the bottom of the opening so as to be arranged on the concentric opening similar figure centered. Further, the display device can be completed by executing the same steps as [Step-150] of the first embodiment.

(Embodiment 4) Embodiment 4 relates to a method of manufacturing a field emission device according to a fourth aspect of the present invention.
The structure of the field emission device manufactured by the manufacturing method of the fourth embodiment is substantially the same as that of the field emission device shown in FIG. Since it is the same as the emission element, detailed description is omitted. Hereinafter, a method for manufacturing the field emission device of the fourth embodiment will be described with reference to FIG. 9 which is a schematic partial end view of a support and the like.

[Step-400] First, the cathode electrode 11 is formed on the support 10. Specifically, after a cathode electrode conductive material layer made of, for example, chromium (Cr) is formed on a support 10 made of, for example, a glass substrate by a sputtering method, a stripe-shaped conductive material layer is formed by a photolithography technique and a dry etching technique. Cathode electrode 11
Is formed on the support 10.

[Step-410] Next, the cathode electrode 11
The base 40 is formed on the upper portion. The base 40 is formed on the portion of the cathode electrode 11 corresponding to the portion where the opening is to be formed in a later step, and the thickness of the base 40 is adjusted to the center of the opening. The part closer to the part is made thicker. Specifically, a base forming material layer 40 ″ made of tungsten (W) is formed on the entire surface of the cathode electrode 11 and the support 10 by a sputtering method. Thereafter, an opening is formed in a later step. Base forming material layer 4 located at the center of the region corresponding to the portion
A mask layer 41 is formed at the 0 "portion (see FIG. 9A). The mask layer 41 can be formed by a photolithography technique using a resist material. Using as a mask,
The base forming material layer 40 ″ is etched based on the RIE method. By optimizing the etching conditions, the cathode electrode 1 corresponding to a portion where an opening is to be formed in a later step is formed.
A base 40 made of a base forming material layer 40 ″ can be formed at the center of the portion 1 (see FIG. 9B). The planar shape of the base 40 is circular.

[Step-420] Then, the same steps as [Step-110] and [Step-120] of the first embodiment are performed. That is, after the insulating layer 12 is formed on the cathode electrode 11, the base 40, and the support 10, the gate electrode 13 is formed on the insulating layer 12, and then the base 40 (in the fourth embodiment, further, An opening 14 (a circular shape in plan view) where the cathode electrode 11) is exposed is formed in the gate electrode 13 and the insulating layer 12 (see FIG. 9C). Furthermore,
[Step-130] and [Step-140] of the first embodiment
By performing the same steps as those in
A base 40 having a plurality of electron-emitting portions exposed at the bottom of the opening so as to be arranged on a concentric opening similar figure centered on the center of the cathode 4 (in the fourth embodiment, further includes a cathode electrode 11). ), The field emission device can be completed. Further, the display device can be completed by executing the same steps as [Step-150] of the first embodiment.

(Embodiment 5) Embodiment 5 relates to a method for manufacturing a field emission device according to the fifth aspect of the present invention.
The structure of the field emission device manufactured by the manufacturing method of the fifth embodiment is substantially the same as that of the field emission device shown in FIG. 1 except that the structure of the portion of the cathode electrode located at the bottom of the opening 14 is different. Since it is the same as the emission element, detailed description is omitted. FIG. 10 is a schematic partial end view of a support and the like.
The method for manufacturing the field emission device according to the fifth embodiment will be described with reference to FIG.

[Step-500] First, the cathode electrode 11 is formed on the support. Specifically, after a cathode electrode conductive material layer made of, for example, chromium (Cr) is formed on a support 10 made of, for example, a glass substrate by a sputtering method, a stripe-shaped conductive material layer is formed by a photolithography technique and a dry etching technique. Cathode electrode 11
Is formed on the support 10. Next, the insulating layer 12 is formed on the support 10 and the cathode electrode 11 in the same manner as in [Step-110] and [Step-120] of the first embodiment.
Further, a gate electrode 13 is formed on the insulating layer 12, and an opening 14 (having a circular shape in plan view) where the cathode electrode 11 is exposed at the bottom is formed in the gate electrode 13 and the insulating layer 12. Thus, the structure shown in FIG. 10A can be obtained.

[Step-510] Thereafter, the base 40 is formed on the center of the cathode electrode 11 exposed at the bottom of the opening 14. Specifically, for example, after a photoresist layer is formed on the entire surface by spin coating, a mask layer 42 made of a photoresist layer is formed on the cathode electrode 11 at the center of the bottom of the opening 14 based on the photolithography technique.
Is selectively removed (see FIG. 10B). afterwards,
When a base forming material layer made of tungsten (W) is formed on the entire surface including the mask layer 42 by a sputtering method, and then the mask layer 42 is removed, the base forming material layer on the mask layer 42 is also removed, and the opening is formed. A base 4 made of a base forming material layer on the cathode electrode 11 at the bottom center of the portion 14
0 is left (see FIG. 10C). In FIG. 10C, the planar shape of the base 40 located at the center of the opening 14 is circular, and the thickness is constant.

[Step-520] Then, the same steps as those of [Step-130] and [Step-140] of the first embodiment are performed, that is, concentric with the center of the opening 14 as the center. So that it is placed on the opening similar figure,
Base 40 having a plurality of electron-emitting portions formed at the bottom of the opening
In the fifth embodiment, by further forming on the cathode electrode 11 exposed at the bottom of the opening 14, the field emission device can be completed. Further, the display device can be completed by executing the same steps as [Step-150] of the first embodiment.

(Embodiment 6) Embodiment 6 relates to a method of manufacturing a field emission device according to a sixth aspect of the present invention.
The structure of the field emission device manufactured by the manufacturing method of the sixth embodiment is substantially the same as that of FIG. Since it is the same as the field emission device shown, detailed description is omitted. Hereinafter, a method for manufacturing the field emission device of the sixth embodiment will be described with reference to FIG. 11 which is a schematic partial end view of the support and the like.

[Step-600] First, the thickness of a portion of the support 10 corresponding to a portion where an opening is to be formed in a later step is increased as the portion is closer to the center of the opening. Specifically, for example, after forming a photoresist layer on the entire surface by spin coating, based on photolithography technology,
Support 1 corresponding to a portion where an opening is to be formed in a later step
Mask layer 51 made of a photoresist layer
Are selectively left (see FIG. 11B). Thereafter, using the mask layer 51 as an etching mask,
Etch 0. As a result, the thickness of the portion of the support 10 covered with the mask layer 51 can be made thicker than the thickness of the other portions. The thickness of the portion of the body 10 can be increased in the portion closer to the center of the opening. In FIG. 11B, a thick portion of the support 10 is represented by a support protrusion 52. The planar shape of the support projection 52 is circular.

[Step-610] Thereafter, the cathode electrode 11 is formed on the support 10. Specifically, for example, chromium (Cr) is formed on a support 10 made of, for example, a glass substrate.
After forming a conductive material layer for a cathode electrode composed of a cathode by sputtering, a stripe-shaped cathode electrode 1 is formed based on a photolithography technique and a dry etching technique.
1 is formed on a support 10 (see FIG. 11C).
The cathode electrode 11 covers the support projection 52.

[Step-620] Then, the same steps as [Step-110] and [Step-120] of the first embodiment are performed. That is, after the insulating layer 12 is formed on the cathode electrode 11 and the support 10, the gate electrode 1 is formed on the insulating layer 12.
Next, an opening 14 (planar shape is circular) with the cathode electrode 11 exposed at the bottom is formed in the gate electrode 13 and the insulating layer 12. Further, [Step-
130] and [Step-140], that is, a plurality of electron-emitting portions are arranged so as to be arranged on a concentric opening similar figure centering on the center of the opening 14. By forming on the cathode electrode 11 exposed at the bottom of the opening, the field emission device can be completed. Further, the display device can be completed by executing the same steps as [Step-150] of the first embodiment.

(Embodiment 7) Embodiment 7 also relates to a field emission device and a display device according to the first aspect of the present invention. In the seventh embodiment, the field emission device is (1)
Forming a cathode electrode on the support; and (2) forming a plurality of electron-emitting portions on a portion of the cathode electrode corresponding to a portion for forming an opening in a later process;
(3) a step of forming an insulating layer on the entire surface; (4) a step of forming a gate electrode on the insulating layer; and (5) a step of forming at least an opening in which an electron emission portion is exposed at the bottom in the insulating layer. , Manufactured based on. In the step (1), the thickness of a portion of the cathode electrode corresponding to a portion where an opening is to be formed in a later step is made thicker in a portion closer to the center of the opening, and in the step (2), The plurality of electron emitting portions are arranged on a concentric opening similar figure centering on the center of the opening.

That is, the method of manufacturing the field emission device according to the seventh embodiment is the same as that of the first embodiment of the present invention described in the first embodiment.
In the method for manufacturing a field emission device according to the aspect, the method corresponds to a method in which the order of forming a plurality of electron-emitting portions is changed. Hereinafter, a method for manufacturing the field emission device according to the seventh embodiment will be described.
12 and 13 which are schematic partial end views of a support and the like.
This will be described with reference to FIG.

[Step-700] First, in the same manner as in [Step-100] of the first embodiment, the thickness of the portion of the cathode electrode corresponding to the portion where an opening is to be formed in a subsequent step is set as follows.
A thicker cathode electrode 11 is formed on the support 10 as the portion is closer to the center of the opening (see FIG. 12A). The region of the cathode electrode 11 having a large thickness is represented by a raised portion 11A.

[Step-710] Thereafter, a plurality of electron-emitting portions are arranged so as to be arranged on a concentric opening similar figure centered on the center of the opening formed in a later step. A plurality of electron emitting portions 15A and 15B are formed on a portion of the cathode electrode 11 corresponding to a portion where an opening is formed in the process. Specifically, [Step-130] of the first embodiment.
Steps similar to the above are performed. That is, for example, after a novolak type positive photoresist layer 32 ′ is formed on the entire surface by a spin coating method (see FIG. 12B), an opening is formed in a later step using an exposure mask and exposure light. By selectively exposing the photoresist layer 32 'on the portion of the cathode electrode 11 corresponding to the portion where the portion is to be formed, and then developing the photoresist layer 32' using an alkali developing solution, The photoresist layer 32 'on the portion of the cathode electrode 11 corresponding to the portion where the opening is to be formed is selectively removed. Thus, the release layer 32 covering the region of the cathode electrode 11 where the electron emission portion is not formed.
(See FIG. 12C). still,
Areas where the electron emitting portions are to be formed are denoted by reference numerals 32A and 32
B, the plane shape of the region 32A is a circle having a diameter of about 3 μm, and the plane shape of the region 32B has an inner diameter of 10 μm.
It is a continuous ring (ring shape) with an outer diameter of 16 μm and a width of 3 μm.

[Step-720] Next, the electron emission portion forming layer 33 is formed on the entire surface. Specifically, the same step as [Step-140] of the first embodiment is executed. That is, the average diameter of graphite is 0.5 μm and the average thickness is 0.0
An electron emission portion forming layer 33 can be formed on the entire surface by applying a conductive composition made of plate-shaped conductive particles of 2 μm and water glass to the entire surface by spin coating. D)). Next, the electron emission portion forming layer 33 is dried. At this time, the conductive particles are in the region 32
The long axes of the conductive particles are oriented along the side walls of the release layer 32 in A and 32B in the direction crossing the electron irradiation surface (anode electrode). More specifically, the plate-shaped conductive particles are
The diameter direction is substantially parallel to the normal line of the support 10. After that, the binder is preliminarily fired, and then the release layer 32 is formed.
Is removed together with the portion of the electron emission portion forming layer 33 on the separation layer 32 using an alkaline solution, whereby the structure shown in FIG. 13A can be obtained. After that, it is preferable to perform high-pressure spray cleaning using pure water, and finally perform firing of the binder.

[Step-730] Then, the same steps as in [Step-110] of the first embodiment are performed, and a gate is formed on the insulating layer 12 as in [Step-120] of the first embodiment. After the formation of the electrode 13 (see FIG. 13B), an opening (planar shape is circular) in which the electron emission portions 15A and 15 are exposed at the bottom is further formed in the gate electrode 13 and the insulating layer 12. A field emission device having a structure similar to that shown in FIG. 1 can be obtained. Thereafter, the display device can be completed by further executing the same steps as [Step-150] of the first embodiment.

In the method of manufacturing the field emission device according to the third aspect of the present invention described in the third embodiment, the electron emission portion is manufactured by a method in which the order of forming the plurality of electron emission portions is changed. Can also. That is, the field emission device is
(1) a step of forming a base on the support; (2) a step of forming a cathode electrode on the support and the base; and (3) a cathode electrode corresponding to a portion where an opening is to be formed in a later step. Forming a plurality of electron-emitting portions on the portion of
(4) a step of forming an insulating layer on the entire surface; (5) a step of forming a gate electrode on the insulating layer; and (6) a step of forming at least an opening in which an electron emission portion is exposed at the bottom in the insulating layer. , Can also be manufactured. In the step (1), a base is formed on a portion of the support corresponding to a portion where an opening is to be formed in a later step, and the thickness of the base is set closer to the center of the opening. In the step (3), the plurality of electron-emitting portions are arranged on a concentric opening similar figure centering on the center of the opening.

Alternatively, in the method of manufacturing the field emission device according to the fourth aspect of the present invention described in the fourth embodiment, the electron emission portion is manufactured by a method in which the order of forming the plurality of electron emission portions is changed. You can also. That is, (1) a step of forming a cathode electrode on a support, (2) a step of forming a base on the cathode electrode,
(3) a step of forming a plurality of electron-emitting portions on the base (and in some cases, on the base and the cathode electrode); (4) a step of forming an insulating layer on the entire surface; and (5) a gate electrode on the insulating layer. And (6) a step of forming at least an insulating layer with an opening in which an electron-emitting portion is exposed at the bottom. In the step (2), a base is formed on a portion of the support corresponding to a portion where an opening is to be formed in a later step, and the thickness of the base is set closer to the center of the opening. In the step (3), the plurality of electron-emitting portions are arranged on a concentric opening similar figure centering on the center of the opening.

Alternatively, in the method of manufacturing the field emission device according to the sixth aspect of the present invention described in the sixth embodiment, the electron emission portion is manufactured by a method in which the order of forming the plurality of electron emission portions is changed. You can also. That is, a plurality of electron-emitting devices are formed on the field emission device by (1) forming a cathode electrode on a support, and (2) forming a plurality of electrons on a portion of the cathode electrode corresponding to a portion for forming an opening in a later process. Forming a portion, and (3) forming an insulating layer on the entire surface;
(4) forming a gate electrode on the insulating layer; (5)
It can also be manufactured based on a step of forming at least an opening in which the electron emission portion is exposed at the bottom in the insulating layer. Prior to the step (1), the thickness of a portion of the support corresponding to a portion where an opening is to be formed in a later step is made thicker in a portion closer to the center of the opening. In, the plurality of electron-emitting portions are arranged on a concentric opening similar figure centering on the center of the opening.

The field emission device manufacturing method, which is a modification of the field emission device manufacturing method described in the third, fourth, and sixth embodiments, relates to a method of forming a plurality of electron emission portions. Is substantially the same as the method of manufacturing the field emission device described in Embodiments 3, 4, and 6 except that
Detailed description is omitted.

(Embodiment 8) Embodiment 8 is directed to a field emission device according to the second embodiment of the present invention, in which the electron-emitting portion is formed of a carbon-based thin film, and to a field emission device incorporating such a field emission device. The present invention relates to a display device according to the second aspect and a method for manufacturing the field emission device according to the seventh aspect of the present invention for manufacturing the field emission device. FIG. 15C shows a schematic partial end view of the field emission device according to the eighth embodiment.
FIG. 14 is a schematic partial end view of the display device of the eighth embodiment. Note that a schematic partial perspective view of the disassembled display device is substantially the same as that shown in FIG.

In the eighth embodiment, the electron emitting section 115
Is formed of graphite having crystallinity, specifically, a plurality of so-called carbon nanotubes. Further, between the electron emitting portion 115 and the cathode electrode 11, a carbon-based thin film selective growth region 120 for selectively growing the electron emitting portion 115 is further formed. Here, the carbon-based thin film selective growth region 120
Is formed on the portion of the cathode electrode 11 located at the bottom of the opening 14, and is formed by cutting the carbon-based thin film selective growth region 120 along a virtual vertical plane passing through the center of the opening 14. The locus drawn by the surface of the selective growth region 120 rises stepwise toward the center of the opening 14. Specifically, it is trapezoidal. Except for these points, the field emission device or the display device according to the eighth embodiment has the same structure as the field emission device or the display device described in the first embodiment, and thus detailed description is omitted. ,Less than,
A method for manufacturing a field emission device and a method for manufacturing a display device according to the eighth embodiment will be described.

[Step-800] First, the cathode electrode 11 is formed on the support 10. Specifically, for example, aluminum (A) is formed on a support 10 made of a glass substrate, for example.
After the cathode electrode conductive material layer formed in 1) is formed by a sputtering method, a striped cathode electrode 11 is formed on the support 10 based on a photolithography technique and a dry etching technique. The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-810] Next, the carbon-based thin film selective growth region 120 is formed on the portion of the cathode electrode 11 where the electron emission portion is to be formed. In other words, the locus of the surface when cut along a virtual vertical plane passing through the center of the opening to be formed in a later step over the portion of the cathode electrode 11 where the electron emitting portion is to be formed is the center of the opening. A (specifically, trapezoidal) carbon-based thin film selective growth region 120 is formed so as to rise stepwise toward the portion. Specifically, for example, nickel (N
i) A layer is formed on the entire surface by, for example, a sputtering method exemplified in Table 1. Thereafter, a mask layer is formed on the nickel layer located at the bottom of the opening formed in a later step based on a photolithography technique. Next, by performing an ashing process using oxygen plasma,
To reduce the adhesion between the mask layer and the nickel layer at the edge of the mask layer and its vicinity, in the next step,
The carbon-based thin film selective growth region 12 such that the locus drawn by the surface when cut along a virtual vertical plane passing through the center of the opening formed in a later step rises stepwise toward the center of the opening.
It is desirable from the viewpoint that it is easy to form 0.

[Table 1] [Nickel layer deposition conditions] Target: NiAr flow rate: 100 SCCM Pressure: 0.5 Pa DC power: 2 kW Sputtering temperature: 200 ° C Film thickness: 150 nm

Thereafter, the nickel layer was wet-etched with a mixed acid of phosphoric acid, nitric acid and acetic acid at a liquid temperature of 40 ° C., thereby cutting the nickel layer along a virtual vertical plane passing through the center of an opening formed in a later step. The trajectory drawn by the surface rises stepwise toward the center of the opening (specifically,
A (trapezoidal) carbon-based thin film selective growth region 120 can be formed. Next, the mask layer is removed. Thereafter, if necessary, the carbon-based thin film selective growth region 120 is patterned into a desired shape by photolithography and etching. Thus, the structure shown in FIG. 15A can be obtained. Carbon-based thin film selective growth area 12
At 0, a raised portion 120A is formed. The planar shapes of the carbon-based thin film selective growth region 120 and the raised portion 120A are circular.

[Step-820] Then, in the same manner as in [Step-110] and [Step-120] of the first embodiment,
An insulating layer 12 is formed on the entire surface (specifically, on the support 10, the cathode electrode 11, and the carbon-based thin film selective growth region 120), and a gate electrode 13 made of aluminum (Al) is further formed on the insulating layer 12. Opening 1 formed with carbon-based thin film selective growth region 120 and cathode electrode 11 exposed at bottom
4 (planar shape is circular), the gate electrode 13 and the insulating layer 1
2 is formed. Here, the stripe-shaped gate electrode 13
Extends in the direction perpendicular to the plane of the drawing. Thus, FIG.
The structure shown in FIG. 5B can be obtained. Note that only the carbon-based thin film selective growth region 120 is exposed at the bottom of the opening 14, and the carbon-based thin film selective growth region 120 is covered with the insulating layer 12 from the bottom of the opening 14.
May extend to the top.

[Step-830] Then, the electron emitting portion 115 made of a carbon-based thin film is placed in the carbon-based thin film selective growth region 120.
Form on top. Specifically, for example, using a helicon wave plasma CVD apparatus, a plasma CV shown in Table 2 below is used.
Under the condition D, the electron emitting portion 115 composed of the carbon-based thin film 121 is selectively formed on the carbon-based thin film selective growth region 120 (see FIG. 15C). Since the cathode electrode 11 and the gate electrode 13 are made of aluminum, no carbon-based thin film is formed on the cathode electrode 11 and the gate electrode 13. The electron-emitting portion 115 is formed of a carbon-based graphite formed by crystallizing graphite formed on the carbon-based thin film selective growth region 120 (more specifically, a carbon nanotube formed of graphite having sp ² bonds). It is composed of a thin film 121. In order to change the crystallinity of the carbon-based thin film 121 constituting the electron emitting portion 115, the CVD conditions may be changed as needed. In order to stabilize discharge and promote plasma dissociation, a diluting gas such as helium (He) or argon (Ar) may be mixed, or a doping gas such as nitrogen or ammonia may be mixed. Is also good. Since the electron emission portion 115 composed of the carbon-based thin film 121 can be selectively formed on the carbon-based thin film selective growth region 120 formed on the cathode electrode 11 exposed at the bottom of the opening 14, the carbon-based thin film No patterning or the like of 121 is required at all.

[Table 2] Gas used: CH ₄ / H ₂ = 50/50 sccm Power supply: 1500 W Power applied to the support: 100 V Plasma density: 3 × 10 ¹² / cm ³ Reaction pressure: 0.1 Pa Support temperature: 300゜ C Electron temperature: 6.5 eV Ion current density: 25 mA / cm ²

[Step-840] Thus, FIG.
After obtaining a field emission device having the same structure as shown in,
Further, the display device can be completed by executing the same steps as [Step-150] of the first embodiment.

In the eighth embodiment, [Step-8]
00], [Step-810], [Step-830], and [Step-820]. That is, (1) a step of forming a cathode electrode on a support, and (2) a virtual path passing through the center of an opening to be formed in a later step on a portion of the cathode electrode where an electron emission portion is to be formed. The trajectory drawn by the surface when cut along the vertical plane monotonically increases toward the center of the opening, or alternatively, the carbon-based thin film selective growth region that rises stepwise toward the center of the opening. Forming; (3) forming an electron emitting portion made of a carbon-based thin film on a carbon-based thin film selective growth region; (4) forming an insulating layer on the entire surface; and (5) forming an insulating layer on the entire surface. And (6) a step of forming at least an insulating layer with an exposed electron-emitting portion at the bottom in the insulating layer. FIG. 16 is a schematic partial cross-sectional view of the structure at the time when the step (3) in this case is completed.

Alternatively, [Step-800], [Step-
830], [Step-810], and [Step-820]. That is, (1) a step of forming a cathode electrode on a support, (2) a step of forming an insulating layer on the entire surface, and (3) a step of forming a gate electrode on the insulating layer.
(4) a step of forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer; and (5) an opening above the portion of the cathode electrode where the electron emission section to be exposed is formed at the bottom of the opening. Forming a carbon-based thin-film selective growth region which monotonically increases toward the center of the opening or rises stepwise toward the center of the opening; and (6) electron emission comprising the carbon-based thin film Forming a portion on the carbon-based thin film selective growth region.

(Embodiment 9) Embodiment 9 is directed to a field emission device according to the second embodiment of the present invention in which the electron-emitting portion is formed of a carbon-based thin film, and to a field emission device incorporating such a field emission device. The present invention relates to a display device according to the second aspect and a method for manufacturing the field emission device according to the eighth aspect of the present invention for manufacturing the field emission device. FIG. 18C is a schematic partial end view of the field emission device according to the ninth embodiment.
FIG. 17 is a schematic partial end view of the display device of the ninth embodiment. Note that a schematic partial perspective view of the disassembled display device is substantially the same as that shown in FIG.

Also in the ninth embodiment, the electron emission portion 11
The carbon-based thin film 121 constituting No. 5 is made of graphite having crystallinity, specifically, a plurality of so-called carbon nanotubes. Further, between the electron emitting portion 115 and the cathode electrode 11, a carbon-based thin film selective growth region 120 for selectively growing the electron emitting portion 115 is further formed. In the ninth embodiment, the carbon-based thin film selective growth region 120 is formed on the portion of the cathode electrode 11 located at the bottom of the opening 14.
The locus drawn by the surface of the cathode electrode 11 located at the bottom of the opening 14 when the cathode electrode 11 located at the bottom of the opening 14 is cut on a virtual vertical plane passing through the center of the opening 14 It rises monotonically toward the center or rises stepwise toward the center of the opening 14. Except for these points, the field emission device or the display device of the ninth embodiment has the same structure as the field emission device or the display device described in the first embodiment.
Detailed description is omitted, and a method for manufacturing the field emission device and a method for manufacturing the display device according to the ninth embodiment will be described below.

[Step-900] First, the locus drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening formed in a later step monotonously increases toward the center of the opening. Alternatively, the portion of the cathode electrode on which the electron emission portion is to be formed is processed so as to rise stepwise toward the center of the opening. Specifically, [Step-
100], a cathode electrode 11 made of aluminum (Al) is formed on the support 10. The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-910] Then, a raised portion 11A is formed on the cathode electrode 11 in the same manner as in [Step-100] of the first embodiment. The planar shape of the raised portion 11A is circular.

[Step-920] Next, a carbon-based thin film selective growth region 120 is formed on a portion of the cathode electrode 11 where an electron emission portion is to be formed. Unlike the eighth embodiment, the thickness of the carbon-based thin film selective growth region 120 is uniform. Specifically, for example, after a nickel (Ni) layer is formed on the entire surface by, for example, the sputtering method illustrated in Table 1, the nickel layer is patterned into a desired shape by a photolithography technique and an etching technique, so that a carbon-based material is formed. The thin film selective growth region 120 can be formed (see FIG. 18A). The planar shape of the carbon-based thin film selective growth region 120 is circular.

[Step-930] Next, in the same manner as [Step-110] and [Step-120] of the first embodiment,
An insulating layer 12 is formed on the support 10 and the cathode electrode 11, a gate electrode 13 made of aluminum (Al) is formed on the insulating layer 12, and an opening 14 (planar shape) where the cathode electrode 11 is exposed at the bottom is formed. Is formed on the gate electrode 13 and the insulating layer 12 (see FIG. 18B). The striped gate electrode 13 extends in a direction perpendicular to the plane of the drawing. Note that only the carbon-based thin film selective growth region 120 is exposed at the bottom of the opening 14, and the carbon-based thin film selective growth region 120 extends from the bottom of the opening 14 onto the cathode electrode 11 covered with the insulating layer 12. May be present.

[Step-940] Next, in the same manner as in [Step-830] of the eighth embodiment, the electron-emitting portion 115 composed of the carbon-based thin film
Form on top. Thus, an electron-emitting portion having the structure shown in FIG. 18C can be obtained.

[Step-950] Thereafter, the same steps as [Step-150] of the first embodiment are performed to complete the display device.

In Embodiment 9, [Step-9]
00], [Step-910], [Step-920], [Step-940], and [Step-930].
That is, (1) a step of forming a cathode electrode on a support, and (2) a locus drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening formed in a later step. Processing the portion of the cathode electrode on which the electron-emitting portion is to be formed, so as to increase monotonically toward the center of the opening or to rise stepwise toward the center of the opening;
(3) forming a carbon-based thin film selective growth region on a portion of the cathode electrode where an electron-emitting portion is to be formed; and (4) placing an electron-emitting portion made of a carbon-based thin film on the carbon-based thin film selective growth region. Forming; (5) forming an insulating layer over the entire surface; (6) forming a gate electrode on the insulating layer; and (7) insulating at least the opening where the electron-emitting portion is exposed at the bottom. And a step of forming a layer. FIG. 19 shows a schematic partial cross-sectional view of the structure at the time when the step (4) in this case is completed.

Alternatively, [Step-900], [Step-900]
910], [step-930], [step-920], and [step-940]. That is, (1) a step of forming a cathode electrode on a support, and (2) a locus drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening formed in a later step. (3) processing the portion of the cathode electrode on which the electron emission portion is to be formed so as to increase monotonically toward the center of the opening or to increase stepwise toward the center of the opening; (4) forming a gate electrode on the insulating layer, (5) forming an opening in which the cathode electrode is exposed at the bottom at least in the insulating layer, and (6). Forming a carbon-based thin-film selective growth region on the portion of the cathode electrode where an electron-emitting portion is to be formed, which is exposed at the bottom of the opening; and (7) selecting the carbon-based thin-film electron-emitting portion from the carbon-based thin-film. Forming on the growth area. Kill. FIG. 20A shows a schematic partial end view of the structure at the time when the above step (5) is completed in this case. 20 (B) and FIG.
(C) of FIG. In this step (6), as in [Step-130] of the first embodiment, the uppermost layer (the insulating layer 12 and the gate electrode 13), the side wall surfaces of the opening 14, and the opening The portion of the cathode electrode on the bottom of which no electron emission portion is formed is covered with a release layer 132 (FIG. 2).
0 (B)). Next, [Step-8] of Embodiment 8
10], for example, nickel (Ni)
After the layer is formed by a sputtering method, the carbon layer-based thin film selective growth region 120 can be formed at the bottom of the opening 14 by removing the peeling layer 132 (see FIG. 20C).

Alternatively, [Step-900], [Step-900]
930], [Step-910], [Step-920], and [Step-940]. That is, (1) a step of forming a cathode electrode on a support, (2) a step of forming an insulating layer on the entire surface, (3) a step of forming a gate electrode on the insulating layer, and (4) a cathode electrode. Forming an opening exposed at the bottom at least in the insulating layer; (5)
The locus drawn by the surface when cut along a virtual vertical plane passing through the center of the opening increases monotonically toward the center of the opening or rises stepwise toward the center of the opening. And (6) processing a portion of the cathode electrode exposed at the bottom of the opening on which the electron emission portion is to be formed, and (6) forming a portion of the cathode electrode exposed at the bottom of the opening on which the electron emission portion is to be formed. It is also possible to comprise a step of forming a carbon-based thin film selective growth region thereon and a step of (7) forming an electron-emitting portion made of a carbon-based thin film on the carbon-based thin film selective growth region. In the above step (5) in this case, in the same manner as in [Step-210] of the second embodiment, the surface when cut along a virtual vertical plane passing through the center of the opening 14 formed in a later step The portion of the cathode electrode 14 where the electron emission portion is to be formed, such that the locus drawn by the arrow rises monotonically toward the center of the opening 14 or rises stepwise toward the center of the opening 14. (See FIG. 21A). The portion of the cathode electrode 11 located at the center of the opening 14 is represented by a raised portion 11A.
Has a circular planar shape. In this case, the thickness of the cathode electrode 11 located at the bottom of the opening 14 changes stepwise. In this case, in the above step (6), as in [Step-130] of the first embodiment, the uppermost layer (the insulating layer 12 and the gate electrode 13), the side wall surfaces of the opening 14, and the opening The portion of the cathode electrode where the electron emission portion is not formed at the bottom of the portion 14 is covered with a release layer 132 (see FIG. 21B). Next, [Step-
810], nickel (N
i) After forming the layer by the sputtering method, the release layer 13
2 can be removed to form the carbon-based thin film selective growth region 120 at the bottom of the opening 14 (FIG. 2).
1 (C)).

(Embodiment 10) Embodiment 10 is directed to a field emission device according to the second embodiment of the present invention, in which the electron-emitting portion is formed of a carbon-based thin film, and to a field emission device incorporating such a field emission device. The present invention relates to a display device according to the second aspect and a method for manufacturing the field emission device according to the ninth aspect of the present invention for manufacturing the field emission device. FIG. 22C is a schematic partial end view of the field emission device according to the tenth embodiment. The display device according to the tenth embodiment has the same structure as that shown in FIG. 14 except for the structure of the electron-emitting portion. Further, a schematic partial perspective view of the disassembled display device is substantially the same as that shown in FIG.

Also in the tenth embodiment, the electron emission portion 1
The carbon-based thin film 121 constituting 15 is made of graphite having crystallinity, specifically, a plurality of so-called carbon nanotubes. Further, between the electron emitting portion 115 and the cathode electrode 11, a carbon-based thin film selective growth region 120 for selectively growing the electron emitting portion 115 is further formed. Here, the base 14 is located between the portion of the cathode electrode 11 located at the bottom of the opening 14 and the support 10.
0 is formed. The carbon-based thin film selective growth region 120 is formed on the cathode electrode 1 located at the bottom of the opening 14
1, the base 14 when the base 140 is cut along a virtual vertical plane passing through the center of the opening 14.
The locus drawn by the surface of 0 monotonically increases toward the center of the opening 14 or rises stepwise toward the center of the opening 14. Except for these points, the field emission device or the display device of the tenth embodiment has a structure similar to that of the field emission device or the display device described in the first embodiment, and thus detailed description is omitted. ,Less than,
A method for manufacturing a field emission device and a method for manufacturing a display device according to the tenth embodiment will be described.

[Step-1000] First, the base 1 was placed on the support 10 in the same manner as in [Step-300] of the third embodiment.
40 is formed. At this time, the trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening to be formed later is formed on the portion of the support 10 where the electron-emitting portion is to be formed.
The base 140 is formed so as to increase monotonically toward the center of the opening or to rise stepwise toward the center of the opening. The planar shape of the base 140 is circular.

[Step-1010] Then, the embodiment 3
In the same manner as in [Step-310], aluminum (A
The cathode electrode 11 comprising the support 10 and the base 1
Formed on 40. Thus, the structure shown in FIG. 22A can be obtained. The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-1020] Next, a carbon-based thin film selective growth region 120 is formed on a portion of the cathode electrode 11 where an electron emission portion is to be formed. Unlike the eighth embodiment, the thickness of the carbon-based thin film selective growth region 120 is uniform. Specifically, for example, after a nickel (Ni) layer is formed on the entire surface by, for example, the sputtering method illustrated in Table 1, the nickel layer is patterned into a desired shape by a photolithography technique and an etching technique, so that a carbon-based material is formed. The thin film selective growth region 120 can be formed (see FIG. 22B). The planar shape of the carbon-based thin film selective growth region 120 is circular.

[Step-1030] Next, Embodiment 1
In the same manner as in [Step-110] and [Step-120], an insulating layer 12 is formed on the support 10 and the cathode electrode 11, and a gate electrode 13 made of aluminum (Al) is further formed on the insulating layer 12. And a cathode electrode 1 on the bottom.
An opening 14 (having a circular plane shape) in which 1 is exposed is formed in the gate electrode 13 and the insulating layer 12. Thus, FIG.
(C) can be obtained. The striped gate electrode 13 extends in a direction perpendicular to the plane of the drawing. The carbon-based thin film selective growth region 1 is formed at the bottom of the opening 14.
20 are exposed, and the carbon-based thin film selective growth region 120 is
It may extend from the bottom of the opening 14 to above the cathode electrode 11 covered with the insulating layer 12.

[Step-1040] Next, Embodiment 8
In the same manner as in [Step-830], the electron-emitting portion 115 composed of the carbon-based thin film
0. Thus, an electron-emitting portion having a structure shown in FIG. 22D can be obtained.

[Step-1050] After that, the embodiment 1
The display device can be completed by performing the same steps as [Step-150].

In Embodiment 10, [Step-
1000], [Step-1010], [Step-102]
0], [Step-1040], and [Step-1030]. That is, (1) a locus drawn by the surface when cut along a virtual vertical plane passing through the center of the opening to be formed later on the portion of the support on which the electron emission portion is to be formed is the center of the opening. Monotonically higher towards
A step of forming a base that rises stepwise toward the center of the opening; (2) a step of forming a cathode electrode on the support and the base; and (3) a cathode electrode on which an electron emission portion is to be formed. Forming a carbon-based thin film selective growth region on the portion of (4); (4) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region; and (5) forming an insulating layer on the entire surface. , A step of (6) forming a gate electrode on the insulating layer, and (7) a step of forming at least an opening in the bottom where the electron emission portion is exposed in the insulating layer. . FIG. 23 shows a schematic partial cross-sectional view of the structure at the time when the step (4) in this case is completed.

Alternatively, [Step-1000], [Step-1010], [Step-1030], [Step-102]
0] and [Step-1040]. That is, (1) a locus drawn by the surface when cut along a virtual vertical plane passing through the center of the opening to be formed later on the portion of the support on which the electron emission portion is to be formed is the center of the opening. Forming a base that rises monotonically towards, or alternatively, rises stepwise towards the center of the opening;
(2) a step of forming a cathode electrode on the support and the base; (3) a step of forming an insulating layer on the entire surface; (4) a step of forming a gate electrode on the insulating layer; and (5) a step of forming a gate electrode on the insulating layer. Forming at least an opening in which the cathode electrode is exposed in the insulating layer; (6) forming a carbon-based thin film selective growth region on the portion of the cathode electrode exposed at the bottom of the opening; (7) Forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region. FIG. 24A shows a schematic partial end view of the structure at the time when the step (5) in this case is completed. In addition, the above step (6) is performed by combining FIG.
(C) of FIG. In this step (6), as in [Step-130] of the first embodiment, the uppermost layer (the insulating layer 12 and the gate electrode 13), the side wall surfaces of the opening 14, and the opening The portion of the cathode electrode on the bottom of which no electron emission portion is formed is covered with a release layer 132 (FIG. 2).
4 (B)). Next, [Step-8] of Embodiment 8
10], for example, nickel (Ni)
After the layer is formed by a sputtering method, the separation layer 132 is removed, whereby the carbon-based thin film selective growth region 120 can be formed at the bottom of the opening 14 (see FIG. 24C).

(Embodiment 11) The eleventh embodiment is directed to a field emission device according to the second embodiment of the present invention in which the electron-emitting portion is formed of a carbon-based thin film, and a field emission device incorporating the field emission device of the present invention. The present invention relates to a display device according to the second aspect and a method for manufacturing the field emission device according to the tenth aspect of the present invention for manufacturing the field emission device. Embodiment 11
FIG. 25C is a schematic partial end view of the field emission device of FIG.
Shown in The display device according to the eleventh embodiment has the same structure as that shown in FIG. 14 except for the structure of the electron-emitting portion.
Further, a schematic partial perspective view of the disassembled display device is substantially the same as that shown in FIG.

Also in the eleventh embodiment, the electron-emitting portion 1
The carbon-based thin film 121 constituting 15 is made of graphite having crystallinity, specifically, a plurality of so-called carbon nanotubes. Further, between the electron emitting portion 115 and the cathode electrode 11, a carbon-based thin film selective growth region 120 for selectively growing the electron emitting portion 115 is further formed. Here, a base 140 is formed on the portion of the cathode electrode 11 located at the bottom of the opening 14. The carbon-based thin film selective growth region 120 is formed on the base 140 located at the bottom of the opening 14, and is formed on a virtual vertical plane passing through the center of the opening 14.
The locus drawn by the surface of the base 140 when the surface is cut increases monotonically toward the center of the opening 14 or rises stepwise toward the center of the opening 14. Except for these points, the field emission device or the display device according to the eleventh embodiment has the same structure as the field emission device or the display device described in the first embodiment, and thus detailed description is omitted. Hereinafter, a method for manufacturing a field emission device and a method for manufacturing a display device according to Embodiment 11 will be described.

[Step-1100] First, a cathode electrode 11 made of, for example, aluminum (Al) is formed in the same manner as in [Step-400] of the fourth embodiment. The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-1110] Then, [Step-41]
0], the locus of the surface drawn when cut along a virtual vertical plane passing through the center of the opening formed in a later step is formed on the portion of the cathode electrode where the electron-emitting portion is to be formed.
The base 140 is formed so as to increase monotonically toward the center of the opening or to rise stepwise toward the center of the opening. Specifically, a base 14 having a constant thickness is provided at the center of the cathode electrode located at the bottom of the opening.
0 is provided. The planar shape of the base 140 is circular.

[Step-1120] Next, the carbon-based thin-film selective growth region 120 is formed on the base 140 where the electron-emitting portion is to be formed and the portion of the cathode electrode 11. Unlike the eighth embodiment, the thickness of the carbon-based thin film selective growth region 120 is uniform. Specifically, for example, after a nickel (Ni) layer is formed on the entire surface by, for example, the sputtering method illustrated in Table 1, the nickel layer is patterned into a desired shape by a photolithography technique and an etching technique, so that a carbon-based material is formed. The thin film selective growth region 120 can be formed (see FIG. 25A). The planar shape of the carbon-based thin film selective growth region 120 is circular.

[Step-1130] Next, in the same manner as in [Step-110] and [Step-120] of the first embodiment,
An insulating layer 12 is formed on the support 10 and the cathode electrode 11, a gate electrode 13 made of aluminum (Al) is formed on the insulating layer 12, and an opening 14 (planar shape) where the cathode electrode 11 is exposed at the bottom is formed. Is formed on the gate electrode 13 and the insulating layer 12. Thus, a structure similar to that shown in FIG. 25B can be obtained.

[Step-1140] Next, Embodiment 8
In the same manner as in [Step-830], the electron-emitting portion 115 composed of the carbon-based thin film
0. Thus, an electron-emitting portion having the structure shown in FIG. 25C can be obtained.

[Step-1150] Then, the embodiment 1
The display device can be completed by performing the same steps as [Step-150].

In Embodiment 11, [Step-
1100], [Step-1110], [Step-112]
0], [Step-1140], and [Step-1130]. That is, (1) a step of forming a cathode electrode on a support, and (2) an imaginary vertical plane passing through the center of an opening to be formed later on a portion of the cathode electrode where an electron emission portion is to be formed. The locus drawn by the surface when cutting is
Forming a base that rises monotonically toward the center of the opening or that rises stepwise toward the center of the opening; and (3) forming the base (in some cases, the base and the cathode electrode). A) forming a carbon-based thin film selective growth region on the carbon-based thin film selective growth region; and (5) forming an electron-emitting portion made of the carbon-based thin film on the carbon-based thin film selective growth region.
A step of forming an insulating layer on the entire surface; (6) a step of forming a gate electrode on the insulating layer; and (7) a step of forming at least an opening in the bottom where the electron emission portion is exposed in the insulating layer. You can also. FIG. 2 is a schematic partial cross-sectional view of the structure at the time when the step (4) in this case is completed.
6 is shown.

Alternatively, [Step-1100], [Step-1110], [Step-1130], [Step-112]
0] and [Step-1140]. That is, (1) a step of forming a cathode electrode on a support;
(2) A locus drawn on the surface of the cathode electrode on which the electron emission portion is to be formed by cutting along a virtual vertical plane passing through the center of the opening to be formed later toward the center of the opening. Forming a base that rises monotonically or rises stepwise toward the center of the opening;
(3) a step of forming an insulating layer on the entire surface; (4) a step of forming a gate electrode on the insulating layer; and (5) a step of opening the base (or base and cathode electrode in some cases) at the bottom. Forming at least an insulating layer, (6) forming a carbon-based thin film selective growth region on the base (in some cases, on the base and the cathode electrode), and (7).
Forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region. FIG. 27A is a schematic partial end view of the structure at the time when the above step (5) is completed in this case. The above step (6) is shown in FIGS. 27B and 27C. In this step (6), as in [Step-130] of the first embodiment, the uppermost layer (insulating layer 12 and gate electrode 13), the side wall surface of opening 14, and
The portion of the cathode electrode at the bottom of the opening 14 where the electron emission portion is not formed is covered with the release layer 132 (see FIG. 27B). Then, in the same manner as in [Step-810] of the eighth embodiment, for example, a nickel (Ni) layer is formed on the entire surface by a sputtering method, and then the release layer 132 is removed. The carbon-based thin film selective growth region 120 can be formed (see FIG. 27C).

Alternatively, [Step-1100], [Step-1130], [Step-1110], [Step-112]
0] and [Step-1140]. That is, (1) a step of forming a cathode electrode on a support;
(2) a step of forming an insulating layer on the entire surface; (3) a step of forming a gate electrode on the insulating layer; and (4) a step of forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer. (5) The locus of the surface when cut along a virtual vertical plane passing through the center of the opening over the portion of the cathode electrode where the electron-emitting portion is to be formed monotonically toward the center of the opening. Forming a base that is raised or rises stepwise toward the center of the opening; and (6) a carbon-based thin film on the base (and possibly on the base and cathode electrode). Forming a selective growth region; (7)
Forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region.
In the step (5), the base 140 can be formed in the same manner as in [Step-510] of the fifth embodiment. The planar shape of the base 140 is circular. In addition, in this step (6), [Step-13] of the first embodiment.
0], the uppermost layer (the insulating layer 12 and the gate electrode 13), the side wall surface of the opening 14, and the portion of the cathode electrode at the bottom of the opening 14 where the electron emission portion is not formed are covered with a release layer. . Next, [Step-81] of Embodiment 8
0], for example, a nickel (Ni) layer is formed on the entire surface by a sputtering method, and then the release layer is removed to form a carbon-based thin film selective growth region 120 at the bottom of the opening 14. Can be.

(Embodiment 12) Embodiment 12 is directed to a field emission device according to the second embodiment of the present invention, in which the electron-emitting portion is formed of a carbon-based thin film, and to a field emission device incorporating such a field emission device. The present invention relates to a display device according to the second aspect and a method for manufacturing the field emission device according to the eleventh aspect of the present invention for manufacturing the field emission device. Embodiment 12
FIG. 28C is a schematic partial end view of the field emission device of FIG.
Shown in The display device according to the twelfth embodiment has the same structure as that shown in FIG. 14 except for the structure of the electron-emitting portion.
Further, a schematic partial perspective view of the disassembled display device is substantially the same as that shown in FIG.

Also in the twelfth embodiment, the electron emission portion 1
The carbon-based thin film 121 constituting 15 is made of graphite having crystallinity, specifically, a plurality of so-called carbon nanotubes. Further, between the electron emitting portion 115 and the cathode electrode 11, a carbon-based thin film selective growth region 120 for selectively growing the electron emitting portion 115 is further formed. Here, the carbon-based thin film selective growth region 12
Numeral 0 is formed on the portion of the cathode electrode 11 located at the bottom of the opening 14, and the portion of the support 10 located at the bottom of the opening 14 is a virtual vertical plane passing through the center of the opening 14. The locus drawn by the surface of the portion of the support 10 located at the bottom of the opening 14 when cut is monotonously increasing toward the center of the opening 14 or alternatively, stairs toward the center of the opening. It is rising. Except for these points,
Since the field emission device or the display device of the twelfth embodiment has the same structure as the field emission device or the display device described in the first embodiment, a detailed description is omitted.
Hereinafter, a method for manufacturing a field emission device and a method for manufacturing a display device according to Embodiment 12 will be described.

[Step-1200] First, in the same manner as in [Step-600] of the sixth embodiment, the trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening to be formed later is as follows. The thickness of the portion of the support 10 on which the electron emission portion is to be formed is processed so that the electron emission portion is monotonically increased toward the center of the opening or rises stepwise toward the center of the opening. In addition, the thick portion of the support 10 is
Represented by 52. The planar shape of the support projection 152 is circular.

[Step-1210] Thereafter, the embodiment 6
In the same manner as in [Step-610], the cathode electrode 11 made of aluminum (Al) is formed on the support 10. The striped cathode electrode 11 extends in the left-right direction of the drawing.

[Step-1220] Next, a carbon-based thin-film selective growth region 120 is formed on a portion of the cathode electrode 11 where an electron-emitting portion is to be formed. Unlike the eighth embodiment, the thickness of the carbon-based thin film selective growth region 120 is uniform. Specifically, for example, after a nickel (Ni) layer is formed on the entire surface by, for example, the sputtering method illustrated in Table 1, the nickel layer is patterned into a desired shape by a photolithography technique and an etching technique, so that a carbon-based material is formed. The thin film selective growth region 120 can be formed (see FIG. 28A). The planar shape of the carbon-based thin film selective growth region 120 is circular.

[Step-1230] Then, the embodiment 1
In the same manner as in [Step-110] and [Step-120], an insulating layer 12 is formed on the support 10 and the cathode electrode 11, and a gate electrode 13 made of aluminum (Al) is further formed on the insulating layer 12. And a cathode electrode 1 on the bottom.
An opening 14 (a circular shape in plan view) where 1 is exposed is formed in the gate electrode 13 and the insulating layer 12 (see FIG. 28B). The striped gate electrode 13 extends in a direction perpendicular to the plane of the drawing. Note that only the carbon-based thin film selective growth region 120 is exposed at the bottom of the opening 14, and the carbon-based thin film selective growth region 120 extends from the bottom of the opening 14 onto the cathode electrode 11 covered with the insulating layer 12. May be present.

[Step-1240] Next, Embodiment 8
In the same manner as in [Step-830], the electron-emitting portion 115 composed of the carbon-based thin film
0. Thus, an electron-emitting portion having the structure shown in FIG. 28C can be obtained.

[Step-1250] Then, the embodiment 1
The display device can be completed by performing the same steps as [Step-150].

In the twelfth embodiment, [Step-
1200], [Step-1210], [Step-122]
0], [Step-1240], and [Step-1230]. That is, (1) the locus drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening formed later becomes monotonically higher toward the center of the opening, or Processing the thickness of the portion of the support on which the electron emission portion is to be formed so as to rise in a stepwise manner toward the portion; (2) forming the cathode electrode on the support; Forming a carbon-based thin film selective growth region on the portion of the cathode electrode where the emission portion is to be formed;
(4) a step of forming an electron-emitting portion made of a carbon-based thin film on a carbon-based thin film selective growth region; (5) a step of forming an insulating layer on the entire surface; and (6) a gate electrode on the insulating layer. And (7) a step of forming at least the insulating layer with the opening where the electron-emitting portion is exposed at the bottom. FIG. 29 shows a schematic partial cross-sectional view of the structure at the time when the step (4) in this case is completed.

Alternatively, [Step-1200], [Step-1210], [Step-1230], [Step-122]
0] and [Step-1240]. That is, (1) the locus drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening formed later becomes monotonically higher toward the center of the opening, or Processing the thickness of the portion of the support on which the electron-emitting portion is to be formed so as to rise stepwise toward the portion; (2) forming the cathode electrode on the support; (4) forming a gate electrode on the insulating layer, (5) forming at least an opening at the bottom where the cathode electrode is exposed in the insulating layer,
(6) a step of forming a carbon-based thin film selective growth region on a portion of the cathode electrode where an electron-emitting portion is to be formed, which is exposed at the bottom of the opening; Forming on the selective growth region of the base thin film. FIG. 30A shows a schematic partial end view of the structure at the time when the step (5) in this case is completed. Further, the above step (6) is performed in the same manner as in FIG.
And (C) of FIG. In this step (6), similarly to [Step-130] of the first embodiment,
Top layer (insulating layer 12 and gate electrode 13) and opening 1
4 and the portion of the cathode electrode at the bottom of the opening 14 where the electron emission portion is not formed are covered with a peeling layer 132 (see FIG. 30B). Then, in the same manner as in [Step-810] of the eighth embodiment, for example, a nickel (Ni) layer is formed on the entire surface by a sputtering method, and then the release layer 132 is removed. The carbon-based thin film selective growth region 120 can be formed (see FIG. 30C).

Although the present invention has been described based on the embodiments of the present invention, the present invention is not limited to these embodiments. The various conditions, the materials used, the structures of the field emission element and the display device, the shape of the electron-emitting portion, and the like described in the embodiment are merely examples, and can be appropriately changed. In some cases, a flat (that is, approximately constant thickness) electron-emitting portion may be formed on the stepped cathode electrode or the base exposed at the bottom of the opening.

For example, in the field emission device shown in FIG. 1, the electron emission portions 15A and 15B
An example in which is formed is shown in a schematic partial end view in FIG. Further, in the field emission device shown in FIG.
Forming electron emitting portions 15A and 15B on the protruding portion 11A,
An example in which the electron-emitting portion 15C is formed on the cathode electrode 11 is shown in a schematic partial end view in FIG. FIG.
In the example shown in FIG. 1B, the shape of the electron-emitting portion 15A located at the center of the opening is a crown shape, and the concentric opening-like figure centered on the center of the opening. The shape of the electron emitting portions 15B and 15C arranged above is a continuous ring (ring shape).

In the field emission device according to the first aspect or the second aspect of the present invention, a second insulating layer 60 is further provided on the gate electrode 13 and the insulating layer 12, and the second insulating layer 6
A focusing electrode 61 may be provided on zero. FIGS. 32A and 32B are schematic partial end views of the field emission device having such a structure. The second insulating layer 60 has a second opening 62 communicating with the opening 14. For example, in the first embodiment, the converging electrode 61 is formed by forming the stripe-shaped gate electrode 13 on the insulating layer 12 and then forming the second insulating layer 60 in [Step-120]. Then, after forming the patterned focusing electrode 61 on the second insulating layer 60, the focusing electrode 6
The second opening 62 may be provided in the first and second insulating layers 60, and the opening 14 may be provided in the gate electrode 13 and the insulating layer 12. In other embodiments, the focusing electrode 61 can be formed in a process similar to such a process.

The focusing electrode is formed not only by such a method but also by, for example, a 42% Ni—
After forming an insulating film made of, for example, SiO _{2 on} both sides of a metal plate made of an Fe alloy, a focusing electrode can be formed by forming an opening by punching or etching a region corresponding to each pixel. . Then, the cathode panel, the metal plate, and the anode panel are stacked, and a frame body is arranged on the outer peripheral portion of both panels, and a heat treatment is performed, so that the insulating film and the insulating layer 12 formed on one surface of the metal plate are separated. The display device can also be completed by bonding, bonding the insulating film formed on the other surface of the metal plate and the anode panel, integrating these members, and then sealing them in a vacuum.

In the eighth to twelfth embodiments, the electron-emitting portion is made of carbon nanotube. However, the electron-emitting portion can be made of carbon nanofiber depending on the CVD conditions for forming the electron-emitting portion. Alternatively, it is also possible to form an electron emitting portion having a conical shape. In the eighth to twelfth embodiments, the carbon-based thin film selective growth region is formed by the sputtering method. However, the carbon-based thin film selective growth region can be formed by another PVD method or the CVD method, or formed by the plating method. You can also. The conditions of the electrolytic plating are shown in Table 3 below.
Note that a nickel plate is used as the anode.

[Table 3] Plating bath composition: Ammonium chloride 1% by weight Boric acid 2% by weight Nickel sulfate 4% by weight Sodium dodecyl sulfate 0.1% by weight Plating bath temperature: 50 ° C Applied current: 25 mA between anode and gate electrode / dm ^2: gate electrode / cathode electrode between 0.5 mA / dm ² potential: the potential of the anode V _a: 10 volt gate electrode potential V _G: 2 volts cathode potential V _C: -5 volts plating time: 10 minutes

In the manufacturing method described in the eighth to twelfth embodiments, in some cases, the surface of the carbon-based thin film selective growth region 120 is naturally oxidized, and
15 may be difficult to form. In such a case, it is desirable to remove the metal oxide (so-called natural oxide film) on the surface of the carbon-based thin film selective growth region 120. still,
The metal oxide on the surface of the carbon-based thin film selective growth region 120 is
For example, it can be removed by a plasma reduction process or a cleaning process.

Specifically, the carbon-based thin film selective growth region 12
0, and before forming the carbon-based thin film, the metal oxide (natural oxide film) on the surface of the carbon-based thin film selective growth region 120 is subjected to a plasma reduction treatment (microwave plasma treatment) exemplified in Table 4 below. ). Alternatively,
For example, 50% hydrofluoric acid aqueous solution and pure water 1:49 (volume ratio)
Using the mixed solution, the exposed carbon-based thin film selective growth region 12
The metal oxide (natural oxide film) on the surface of No. 0 can also be removed.

[Table 4] Working gas: H ₂ = 100 SCCM Pressure: 1.3 × 10 ³ Pa Microwave power: 600 W (13.56 MHz) Processing temperature: 400 ° C.

In the embodiment, the plane shape of the opening 14 is exclusively circular, but the plane shape of the opening is not limited to this, and may be, for example, rectangular.
The locus drawn by the surface of the carbon-based thin film selective growth region 120 when cut along a virtual vertical plane passing through the center of the opening is ascending stepwise toward the center of the opening (specifically, Trapezoidal) case, ie, carbon-based thin film selective growth region 1
FIG. 33A shows a schematic plan view of the carbon-based thin film selective growth region 120 in the case where the thickness of the portion 20 is closer to the center of the opening, and the arrow B in FIG. FIG. 33B shows a schematic cross-sectional view along the line -B. Note that such a shape can be applied to other embodiments.

Alternatively, the field emission device may be
A strip-shaped gate electrode support 112 made of an insulating material and a cathode electrode 1 formed on a support 10
1. Strip-shaped material 113A in which a plurality of openings 114 are formed
Gate electrode 113 composed of
It is composed of the electron emission portions 15A and 15B (or the electron emission portion 115) formed above. Then, the electron emission portion 1 is in contact with the top surface of the gate electrode support portion 112.
A structure in which the band-shaped material 113A is stretched so that the opening 114 is positioned above 5A and 15B (or the electron emission portion 115) may be adopted. Electron emission portion 15A,
15B (or the electron emission unit 115) is the same as that of the first embodiment.
To twelfth embodiment.

The belt-like material 113A is formed on the gate electrode support 1
12 is fixed to the top surface with a thermosetting adhesive (for example, an epoxy-based adhesive). FIG. 34A is a schematic partial cross-sectional view in the case where such a structure is applied to the field emission device of the eighth embodiment. The cathode electrode 11, the band-shaped material 113A and the gate electrode 113, and FIG. 34B shows a schematic layout of the gate electrode support 112. Such a field emission device can be manufactured, for example, by the method described below. Embodiment 8
The following description will be made by taking the electron emitting portion 115 of the first embodiment as an example. However, the electron emitting portions 15A and 15B described in the first to seventh embodiments or the ninth to twelfth embodiments have been described. The present invention can be applied to the electron emission unit 115.

That is, the gate electrode support 1 is provided on the support 10.
12 is formed based on, for example, a sandblast method.
Alternatively, the gate electrode support 112 is
It may be formed based on a combination of the method D and the etching method.
After that, for example, the carbon-based thin film selective growth region 120 and the electron emission portion 115 are formed on the support 10. Specifically, a method similar to that described in the eighth embodiment (or the first to seventh embodiments, the ninth to twelfth embodiments) may be executed. The cathode electrode 11 has a stripe shape and is formed on a portion of the support 10 located between the gate electrode support portions 112. Thereafter, the strip-shaped strip-shaped material 113A in which the plurality of openings 114 are formed is disposed in a state supported by the gate electrode support 112 such that the plurality of openings 114 are located above the electron-emitting portion 115. Thus, the gate electrode 113 composed of the strip-shaped strip-shaped material 113A and having the plurality of openings 114 is connected to the electron-emitting section 11A.
5 above. Striped strip material 113
A can be fixed to the top surface of the gate electrode support 112 with a thermosetting adhesive (for example, an epoxy-based adhesive). In addition, a projected image of the cathode electrode 11 having a stripe shape,
The projected images of the strip-shaped material 113A are orthogonal to each other.

As shown in FIG. 35, which is a schematic partial cross-sectional view near the end of the support 10, both ends of the strip-shaped material 113A are fixed to the periphery of the support 10. Structure. More specifically, for example, a protrusion 117 is formed in advance on the periphery of the support 10, and a thin film 118 of the same material as the material forming the belt-shaped material 113 </ b> A is formed on the top surface of the protrusion 117. deep. Then, with the strip-shaped strip material 113A stretched, the thin film 118 is welded to the thin film 118 using, for example, a laser. The protrusion 117 can be formed, for example, simultaneously with the formation of the gate electrode support.

The plane shape of the opening 114 is not limited to a circle. Modifications of the shape of the opening 114 provided in the belt-shaped material 113A are illustrated in FIGS. 36 (A), (B), (C) and (D).

An example of a method for manufacturing the anode panel AP is as follows.
Hereinafter, description will be made with reference to FIG.

First, a luminescent crystal particle composition is prepared.
For this purpose, for example, a dispersant is dispersed in pure water, and the mixture is stirred for 1 minute at 3000 rpm using a homomixer. Next, the luminescent crystal particles are put into pure water in which the dispersant is dispersed, and the mixture is stirred at 5000 rpm for 5 minutes using a homomixer. Thereafter, for example, polyvinyl alcohol and ammonium bichromate are added, sufficiently stirred, and filtered.

In the manufacture of the anode panel AP, the photosensitive film 70 is formed on the entire surface of the substrate 20 made of, for example, glass.
Is formed (applied). Then, the photosensitive film 70 formed on the substrate 20 is exposed to ultraviolet light emitted from an exposure light source (not shown) and passed through the hole 74 provided in the mask 73 to form a photosensitive region 71 ( FIG. 37A). Thereafter, the photosensitive film 70 is developed and selectively removed to leave the remaining photosensitive film (photosensitive film after exposure and development) 72 on the substrate 20 (see FIG. 37B). Next, after a carbon agent (carbon slurry) is applied to the entire surface, dried and baked, the remaining portion 72 of the photosensitive film and the carbon agent thereon are removed by a lift-off method, so that the carbon is exposed on the exposed substrate 20. A black matrix 22 made of an agent is formed, and at the same time, the remaining portion 72 of the photosensitive film is removed (see FIG. 37C). afterwards,
The red, green, and blue phosphor layers 21 are formed on the exposed substrate 20 (see FIG. 37D). Specifically, a luminescent crystal particle composition prepared from each luminescent crystal particle (phosphor particle) is used. For example, a red photosensitive luminescent crystal particle composition (phosphor slurry) is applied to the entire surface. Coating, exposure,
Develop, then apply a green photosensitive luminescent crystal particle composition (phosphor slurry) over the entire surface, expose and develop, and further, blue photosensitive luminescent crystal particle composition (phosphor slurry) May be applied to the entire surface, exposed and developed. Thereafter, an anode electrode 22 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 21 and the black matrix 23 by a sputtering method. Note that the respective phosphor layers 21 can also be formed by a screen printing method or the like.

[0210] The gate electrode may be a gate electrode in which the effective area is covered with one sheet of conductive material (having an opening). In this case, the shape of the cathode electrode is, for example, a rectangular shape corresponding to one pixel.
Then, a positive voltage (for example, 160 volts) is applied to the gate electrode.
Is applied. Further, for example, a switching element composed of a TFT is provided between the cathode electrode constituting each pixel and the cathode electrode control circuit, and the operation of the switching element controls the state of application to the cathode electrode constituting each pixel. Then, the light emission state of the pixel is controlled.

Alternatively, the cathode electrode may be a cathode electrode in which the effective area is covered with one sheet of conductive material. In this case, an electron emission region composed of a field emission element and constituting each pixel is formed in a predetermined portion of one sheet of conductive material. And
A voltage (for example, 0 volt) is applied to the cathode electrode. Further, for example, a switching element composed of, for example, a TFT is provided between a gate electrode having a rectangular shape corresponding to one pixel and a gate electrode control circuit, and an electron emission unit constituting each pixel is provided by the operation of the switching element. The state in which an electric field is applied to the pixel is controlled, and the light emitting state of the pixel is controlled.

[0212]

According to the present invention, the height of the electron-emitting end of each electron-emitting portion is higher as the electron-emitting portion is located closer to the center of the opening, or The trajectory drawn by the electron-emitting end when the electron-emitting portion is cut on a virtual vertical plane passing through the center of the opening monotonically increases toward the center of the opening, or the locus of the center of the opening may increase. As a result, it becomes possible to make the value of the electron current emitted from the electron-emitting portion substantially constant irrespective of the position of the electron-emitting portion at the bottom of the opening. For example, a flicker-free display screen is obtained, and a stable high-quality display screen is obtained. Further, in the cold cathode field emission device or the cold cathode field emission display according to the first aspect of the present invention, and the manufacturing method thereof, since a plurality of electron emission portions are formed, the cold cathode field emission device is provided. The electron current density emitted from the electron-emitting device can be increased. Further, a cold cathode field emission device or a cold cathode field emission display according to the second aspect of the present invention,
In these manufacturing methods, since the electron-emitting portion is formed of a carbon-based thin film, electrons can be emitted from the electron-emitting portion extremely efficiently. In addition, it is possible to relatively easily cope with an increase in the size of the display device.

[Brief description of the drawings]

FIG. 1 is a schematic partial end view and a schematic partial plan view of a cold cathode field emission device according to Embodiment 1 of the present invention.

FIG. 2 is a schematic perspective view of the cold cathode field emission device according to Embodiment 1 of the present invention, with a portion cut away.

FIG. 3 is a schematic partial end view of the cold cathode field emission display according to the first embodiment of the invention;

FIG. 4 is an exploded schematic partial perspective view of the cold cathode field emission display according to the first embodiment of the invention;

FIG. 5 is a schematic partial end view of a support and the like for describing a method of manufacturing the cold cathode field emission device of the first embodiment of the invention.

FIG. 6 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the first embodiment of the invention, following FIG. 5;

FIG. 7 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 2 of the present invention.

FIG. 8 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 3 of the present invention.

FIG. 9 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 4 of the present invention.

FIG. 10 is a schematic partial end view of a support and the like for describing a method of manufacturing a cold cathode field emission device according to Embodiment 5 of the present invention.

FIG. 11 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 6 of the present invention.

FIG. 12 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 7 of the present invention.

FIG. 13 is a schematic partial end view of a support and the like for illustrating a method of manufacturing the cold cathode field emission device according to the seventh embodiment of the invention, following FIG. 12;

FIG. 14 is a schematic partial end view of a cold cathode field emission display according to an eighth embodiment of the present invention.

FIG. 15 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 8 of the present invention.

FIG. 16 is a schematic partial cross-sectional view of a support and the like for describing a modification of the method for manufacturing the cold cathode field emission device of the eighth embodiment.

FIG. 17 is a schematic partial end view of a cold cathode field emission display according to a ninth embodiment of the present invention;

FIG. 18 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 9 of the present invention.

FIG. 19 is a schematic partial cross-sectional view of a support and the like for describing a modification of the method for manufacturing the cold cathode field emission device of Embodiment 9 of the present invention.

FIG. 20 is a schematic partial end view of a support and the like for describing another modification of the method for manufacturing the cold cathode field emission device of the ninth embodiment of the invention.

FIG. 21 is a schematic partial end view of a support and the like for explaining still another modification of the method for manufacturing a cold cathode field emission device according to the ninth embodiment of the present invention.

FIG. 22 is a schematic partial end view of a support and the like for describing a method of manufacturing a cold cathode field emission device according to Embodiment 10 of the present invention.

FIG. 23 is a schematic partial cross-sectional view of a support and the like for describing a modification of the method for manufacturing a cold cathode field emission device of Embodiment 10 of the present invention.

FIG. 24 is a schematic partial end view of a support and the like for explaining another modification of the method for manufacturing the cold cathode field emission device of the tenth embodiment of the invention.

FIG. 25 is a schematic partial end view of a support and the like for describing a method of manufacturing a cold cathode field emission device according to Embodiment 11 of the present invention.

FIG. 26 is a schematic partial cross-sectional view of a support and the like for describing a modification of the method for manufacturing a cold cathode field emission device of Embodiment 11 of the present invention.

FIG. 27 is a schematic partial end view of a support and the like for describing another modification of the method for manufacturing a cold cathode field emission device according to Embodiment 11 of the present invention.

FIG. 28 is a schematic partial end view of a support and the like for describing a method for manufacturing a cold cathode field emission device according to Embodiment 12 of the present invention.

FIG. 29 is a schematic partial cross-sectional view of a support and the like for describing a modification of the method for manufacturing the cold cathode field emission device of Embodiment 12 of the present invention.

FIG. 30 is a schematic partial end view of a support and the like for describing another modification of the method for manufacturing a cold cathode field emission device according to Embodiment 12 of the present invention.

FIG. 31 is a schematic partial end view of a modified example of the cold cathode field emission device of the first embodiment of the invention.

FIG. 32 is a schematic partial end view of a modified example of the cold cathode field emission device of the first embodiment of the invention.

FIG. 33 is a schematic plan view of an opening having a rectangular planar shape;
And, is a schematic sectional view,

FIG. 34 is a schematic partial cross-sectional view of a modification of the cold cathode field emission device, and a schematic arrangement diagram of a gate electrode and the like.

FIG. 35 is a schematic partial cross-sectional view of the cold cathode field emission device in the modification shown in FIG. 34;

36 is a schematic plan view showing a plurality of openings of a gate electrode in the modification shown in FIG. 34.

FIG. 37 is a schematic partial cross-sectional view of a substrate and the like for describing a method of manufacturing an anode panel in the cold cathode field emission display of the present invention.

FIG. 38 is a view schematically showing an electric field formed in an opening provided in the cold cathode field emission device.

FIG. 39 is a schematic diagram showing a configuration example of a conventional general display device incorporating a Spindt-type cold cathode field emission device.

FIG. 40 is a process diagram showing a method for manufacturing a conventional Spindt-type cold cathode field emission device.

FIG. 41 is a process drawing illustrating a method for manufacturing the conventional Spindt-type cold cathode field emission device following FIG. 40;

FIG. 42 is a schematic partial end view of a conventional flat-type cold cathode field emission device.

[Explanation of symbols]

10 ... Support, 11 ... Cathode, 11A
..Protrusion, 11 '... Conductive material layer for cathode electrode,
12 ... insulating layer, 13 ... gate electrode, 14 ...
Openings, 15A, 15B, 15C, 115: electron emission portions, 15a, 15b: electron emission end portions of electron emission portions, 20: substrate, 21: phosphor layer, 22 ...
Anode electrode, 31, 34, 41, 42, 51 ... mask layer, 32, 132 ... release layer, 32 '... photoresist layer, 33 ... electron emission portion forming layer, 40, 14
0 ... base, 40 '... base forming material layer, 52, 1
52: support projection, 60: second insulating layer, 6
1 Focusing electrode 62 62 Second opening 120
..Selective growth region of carbon-based thin film, 121 ... Carbon-based thin film

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Takeshi Urazono 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 5C036 EE02 EE04 EE14 EF01 EF06 EF09 EG12 EH04 EH11

Claims (40)

[Claims] (A) a cathode electrode formed on a support; (B) an insulating layer formed on the support and the cathode electrode; (C) a gate electrode formed on the insulating layer; A cold cathode field emission device comprising: an opening formed in a gate electrode and an insulating layer; and (E) a plurality of electron emission portions formed on a portion of the cathode electrode located at the bottom of the opening. The plurality of electron-emitting portions are arranged on a concentric opening similar figure centered on the center of the opening, and the height of the electron-emitting end of each electron-emitting portion is close to the center of the opening. A cold cathode field emission device, wherein the higher the position of the electron emission portion, the higher the position of the electron emission portion. 2. The cold cathode field emission device according to claim 1, wherein the thickness of the portion of the cathode electrode located at the bottom of the opening is thicker as the portion is closer to the center of the opening. And a base formed on the portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support. The thickness is thicker as the portion is closer to the center of the opening.
The cold cathode field emission device according to claim 1, wherein the cold cathode field emission device is formed on a portion of the cathode electrode. 4. The cold-cathode field emission device according to claim 1, wherein the thickness of the portion of the support located at the bottom of the opening is thicker near the center of the opening. 5. The method according to claim 1, wherein the second electrode is formed on the insulating layer and the gate electrode.
And a focusing electrode formed on the second insulating layer, wherein at least the second insulating layer has a second opening communicating with the opening. The cold cathode field emission device according to claim 1. 6. An electron-emitting device is disposed so as to face an electron irradiation surface, each electron-emitting portion is composed of a plurality of conductive particles having a major axis and a minor axis, and the major axis of the conductive particles is: The cold cathode field emission device according to claim 1, wherein the cold cathode field emission device is arranged in a direction crossing the electron irradiation surface. 7. The cold cathode field emission device according to claim 6, wherein the conductive particles are made of a carbon-based material. (A) a cathode electrode formed on the support, (B) an insulating layer formed on the support and the cathode electrode, (C) a gate electrode formed on the insulating layer, (D) (E) Electrons formed on the carbon-based thin film selective growth region formed on or above the portion of the cathode electrode located at the bottom of the opening, and the opening formed in the gate electrode and the insulating layer. A cold cathode field emission device having an emission portion, wherein the electron emission portion is made of a carbon-based thin film, and the electron emission end portion is drawn when the electron emission portion is cut along a virtual vertical plane passing through the center of the opening. A cold cathode field emission device characterized in that the trajectory monotonously increases toward the center of the opening or rises in a stepwise manner toward the center of the opening. 9. The selective growth region for carbon-based thin film is formed on a portion of the cathode electrode located at the bottom of the opening, and the selective growth region for carbon-based thin film is defined by a virtual vertical plane passing through the center of the opening. The trajectory drawn by the surface of the carbon-based thin film selective growth region when cut is monotonically higher toward the center of the opening or rising stepwise toward the center of the opening. The cold cathode field emission device according to claim 8, wherein 10. The carbon-based thin film selective growth region is formed on a portion of the cathode electrode located at the bottom of the opening, and is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the cathode electrode located at the bottom of the opening when the portion of the cathode electrode is cut increases monotonically toward the center of the opening, or
The cold cathode field emission device according to claim 8, wherein the cold cathode field emission device rises stepwise toward the center of the opening. 11. A base further formed on the portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support. When the base is cut along a virtual vertical plane passing through the center of the opening, the locus drawn by the surface of the base increases monotonically toward the center of the opening, or in a stepwise manner toward the center of the opening. 9. The cold cathode field electron according to claim 8, wherein the carbon-based thin film selective growth region is formed on a base located at the bottom of the opening or on a portion of the cathode electrode. Emission element. 12. The carbon-based thin film selective growth region is formed on a portion of the cathode electrode located at the bottom of the opening, and is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the support located at the bottom of the opening when the portion of the support is cut increases monotonically toward the center of the opening, or alternatively, toward the center of the opening. 9. The cold cathode field emission device according to claim 8, wherein the cold cathode field emission device rises stepwise. 13. A pixel comprising a plurality of pixels, each pixel comprising a plurality of cold cathode field emission devices, an anode electrode and a phosphor layer provided on a substrate facing the cold cathode field emission devices. Each of the cold cathode field emission devices includes (A) a cathode electrode formed on a support, (B) an insulating layer formed on the support and the cathode electrode, and (C) an insulating layer formed on the insulating layer. A gate electrode, (D) an opening formed in the gate electrode and the insulating layer, and (E) a plurality of electron-emitting portions formed on a portion of the cathode electrode located at the bottom of the opening, The plurality of electron-emitting portions are arranged on a concentric opening-like figure centered on the center of the opening, and the height of the electron-emitting end of each electron-emitting portion is close to the center of the opening. Cold cathode electrodes characterized by being higher in the arranged electron emitting portions Electron emission display device. 14. The cold cathode field emission display according to claim 13, wherein the thickness of the portion of the cathode electrode located at the bottom of the opening is larger as the portion is closer to the center of the opening. 15. A base formed on a portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support. The thickness is thicker as the portion is closer to the center of the opening.
14. The cold cathode field emission display according to claim 13, wherein the cold cathode field emission display is formed on a portion of the cathode electrode. 16. The cold cathode field emission display according to claim 13, wherein the thickness of the portion of the support located at the bottom of the opening is thicker as the portion is closer to the center of the opening. 17. A semiconductor device further comprising: a second insulating layer formed on the insulating layer and the gate electrode; and a focusing electrode formed on the second insulating layer, wherein at least the second insulating layer has an opening. 14. The cold cathode field emission display according to claim 13, wherein a second opening communicating with the portion is formed. 18. An electron-emitting device is disposed to face an anode electrode. Each electron-emitting portion is composed of a plurality of conductive particles having a major axis and a minor axis. 14. The cold cathode field emission display according to claim 13, wherein the cold cathode field emission display is arranged in a direction crossing the electrodes. 19. The cold cathode field emission display according to claim 18, wherein the conductive particles are made of a carbon-based material. 20. A pixel comprising a plurality of pixels, each pixel comprising a plurality of cold cathode field emission devices, an anode electrode provided on a substrate facing the cold cathode field emission devices, and a phosphor layer. Each of the cold cathode field emission devices includes (A) a cathode electrode formed on a support, (B) an insulating layer formed on the support and the cathode electrode, and (C) an insulating layer formed on the insulating layer. (D) an opening formed in the gate electrode and the insulating layer; and (E) a carbon-based thin film selective growth region formed on or above a portion of the cathode electrode located at the bottom of the opening. The electron emitting portion is formed of a carbon-based thin film. When the electron emitting portion is cut along a virtual vertical plane passing through the center of the opening, the trajectory drawn by the electron emitting end is , Monotonous towards the center of the opening No longer, or alternatively, the cold cathode field emission display, characterized in that ascended stepwise toward the center of the opening. 21. The selective growth region for carbon-based thin film is formed on a portion of the cathode electrode located at the bottom of the opening, and the selective growth region for carbon-based thin film is defined by a virtual vertical plane passing through the center of the opening. The trajectory drawn by the surface of the carbon-based thin film selective growth region when cut is monotonically higher toward the center of the opening or rising stepwise toward the center of the opening. 21. The cold cathode field emission display according to claim 20, wherein: 22. The carbon-based thin film selective growth region is formed on a portion of the cathode electrode located at the bottom of the opening, and is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the cathode electrode located at the bottom of the opening when the portion of the cathode electrode is cut increases monotonically toward the center of the opening, or
21. The cold cathode field emission display according to claim 20, wherein the cold cathode field emission display rises stepwise toward the center of the opening. 23. A base further formed on the portion of the cathode electrode located at the bottom of the opening or between the portion of the cathode electrode located at the bottom of the opening and the support. When the base is cut along a virtual vertical plane passing through the center of the opening, the locus drawn by the surface of the base increases monotonically toward the center of the opening, or in a stepwise manner toward the center of the opening. 21. The cold cathode field electron according to claim 20, wherein the carbon-based thin film selective growth region is formed on a base located at the bottom of the opening or on a portion of the cathode electrode. Emission display. 24. The carbon-based thin film selective growth region is formed on a portion of the cathode electrode located at the bottom of the opening, and is located at the bottom of the opening on a virtual vertical plane passing through the center of the opening. The locus drawn by the surface of the portion of the support located at the bottom of the opening when the portion of the support is cut increases monotonically toward the center of the opening, or alternatively, toward the center of the opening. 21. The cold cathode field emission display according to claim 20, wherein the cold cathode field emission display rises stepwise. 25. (a) a step of forming a cathode electrode on a support; (b) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (E) forming at least an opening in the insulating layer; and (e) forming a plurality of electron emitting portions on the cathode so as to be arranged on a concentric opening similar shape centered on the center of the opening. Forming a portion on the electrode, wherein in the step (a), the thickness of the portion of the cathode electrode corresponding to the portion where the opening is formed in the step (d) is set closer to the center of the opening. A method for manufacturing a cold cathode field emission device, wherein the step (e) is performed after the step (d), or the step (e) is performed after the step (a). 26. (a) forming a cathode electrode on a support; (b) forming an insulating layer on the entire surface; (c) forming a gate electrode on the insulating layer; A) forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer; and e. Forming the emission portion on the cathode electrode exposed at the bottom of the opening, and after the step (d), reducing the thickness of the portion of the cathode electrode exposed at the bottom of the opening to the center of the opening. A method for manufacturing a cold cathode field emission device, characterized in that a portion closer to the substrate is made thicker. 27. (a) a step of forming a base on a support; (b) a step of forming a cathode electrode on the support and the base; (c) a step of forming an insulating layer on the entire surface; d) a step of forming a gate electrode on the insulating layer; and (e) at least a step of forming an opening in the insulating layer; and (f) a concentric opening similar to the center of the opening. Forming a plurality of electron-emitting portions on the cathode electrode so as to be arranged on the figure, wherein in the step (a), the support corresponding to the portion where the opening is formed in the step (e) A base is formed thereon, and the thickness of the base is made thicker in a portion closer to the center of the opening, and step (f) is performed after step (e), or step (f) is performed A method for manufacturing a cold cathode field emission device, which is performed after (b). 28. (a) forming a cathode electrode on a support; (b) forming a base on the cathode electrode; (c) forming an insulating layer on the entire surface; (d) Forming a gate electrode on the insulating layer; and (e) forming an opening in at least the insulating layer; and (f) forming an opening similar to the concentric opening centered on the center of the opening. Forming a plurality of electron-emitting portions on the base so as to be arranged in the step (b). In the step (b), a portion of the cathode electrode corresponding to the portion forming the opening in the step (e) is provided. A base is formed thereon, and the thickness of the base is made thicker in a portion closer to the center of the opening, and step (f) is performed after step (e), or step (f) is performed A method for manufacturing a cold cathode field emission device, which is performed after (b) 29. (a) a step of forming a cathode electrode on a support; (b) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; A) forming at least an opening in which the cathode electrode is exposed at the bottom in the insulating layer; e) forming a base on the cathode electrode exposed at the bottom of the opening; and f) a center of the opening. Forming a plurality of electron-emitting portions on a base formed at the bottom of the opening so as to be arranged on a concentric figure similar to the opening with the center as the center. A thickness of a portion closer to the center of the opening is increased. 30. (a) forming a cathode electrode on a support; (b) forming an insulating layer on the entire surface; (c) forming a gate electrode on the insulating layer; (E) forming at least an opening in the insulating layer; and (e) forming a plurality of electron emitting portions on the cathode so as to be arranged on a concentric opening similar shape centered on the center of the opening. Forming a portion on the electrode, wherein prior to the step (a), the thickness of the portion of the support corresponding to the portion forming the opening in the step (d) is reduced to a portion near the center of the opening. A method of manufacturing a cold cathode field emission device, wherein the step (e) is performed after the step (d), or the step (e) is performed after the step (a). 31. After forming a gate electrode on the insulating layer, forming a second insulating layer on the insulating layer and the gate electrode, and then forming a focusing electrode on the second insulating layer, At least in the step of forming an opening in the insulating layer,
31. A second opening at least in the second insulating layer, and an opening communicating with the second opening is formed at least in the insulating layer.
The method for manufacturing a cold cathode field emission device according to any one of the above items. 32. After covering the uppermost layer, the side wall surfaces of the opening, and the bottom of the opening where the electron emitting portion is not formed with a release layer, an electron emitting portion forming layer is formed on the entire surface.
31. The electron emission portion is formed at the bottom of the opening by removing the release layer together with the portion of the electron emission portion forming layer on the release layer. The manufacturing method of the cold cathode field emission device according to the above. 33. Each electron-emitting portion is made of a plurality of conductive particles having a major axis and a minor axis.
31. The method of manufacturing a cold cathode field emission device according to claim 30. 34. The method according to claim 33, wherein the conductive particles are made of a carbon-based material. 35. (a) a step of forming a cathode electrode on a support; (b) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (E) forming at least an opening in the insulating layer; and (e) forming an opening on the portion of the cathode electrode where the electron-emitting portion is to be formed by cutting a virtual vertical plane passing through the center of the opening. A step of forming a carbon-based thin film selective growth region in which the trajectory drawn by the surface monotonously increases toward the center of the opening or rises in a stepwise manner toward the center of the opening;
And (f) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region, wherein the step (e) is performed after the step (a), and thereafter, the step (f) is performed. ) Or, alternatively, step (e) is performed after step (a), and step (f) is performed after step (d), or step (e) is performed after step (d). And then performing step (f). 36. (a) a step of forming a cathode electrode on a support; (b) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (E) forming at least an opening in the insulating layer; and (e) a trajectory drawn by the surface when cut along a virtual vertical plane passing through the center of the opening is monotonous toward the center of the opening. (C) processing the portion of the cathode electrode on which the electron-emitting portion is to be formed so as to be higher or stepwise toward the center of the opening; (E) forming a carbon-based thin film selective growth region on the portion of (e); and (g) forming an electron emission portion made of the carbon-based thin film on the carbon-based thin film selective growth region. ) Is performed after step (a), and then step (f) And then perform step (g), or alternatively, perform step (e) after step (a), then perform step (f), and replace step (g) with step (d). ), Or alternatively, performing step (e) after step (a), performing step (f) after step (d), and then performing step (g), or A method for manufacturing a cold cathode field emission device, wherein the step (e) is performed after the step (d), then the step (f) is performed, and then the step (g) is performed. 37. (a) A locus of a surface drawn on a portion of a support on which an electron-emitting portion is to be formed, cut by a virtual vertical plane passing through the center of an opening to be formed later, is defined by the opening. Forming a base that monotonically increases toward the center of the opening or rises stepwise toward the center of the opening; and (b) forming a cathode electrode on the support and the base. (C) a step of forming an insulating layer on the entire surface; (d) a step of forming a gate electrode on the insulating layer; and (e) a step of forming an opening at least in the insulating layer. f) forming a carbon-based thin film selective growth region on the portion of the cathode electrode on the base; and (g) forming an electron emission portion made of the carbon-based thin film on the carbon-based thin film selective growth region. Wherein step (f) is performed after step (b); After that, the step (g) is executed, or alternatively, the step (f) is executed after the step (b), and the step (g) is executed after the step (e), or the step (f) is executed. ) Is performed after the step (e), and then the step (g) is performed, the method for manufacturing a cold cathode field emission device. 38. (a) a step of forming a cathode electrode on a support; (b) a step of forming an insulating layer on the entire surface; (c) a step of forming a gate electrode on the insulating layer; (E) forming an opening in at least the insulating layer; and (e) forming a surface of the surface when cut at a virtual vertical plane passing through the center of the opening on the portion of the cathode electrode where the electron-emitting portion is to be formed. Forming a base such that the locus to be drawn monotonically increases toward the center of the opening or rises stepwise toward the center of the opening; (f) a carbon-based thin film on the base Forming a selective growth region; and (g) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region, wherein step (e) is performed after step (a). And then performing step (f) and then performing step (g). Performing step (e) after step (a), then performing step (f), and performing step (g) after step (d), or (E) is performed after step (a), step (f) is performed after step (d), and then step (g) is performed, or step (e) is performed after step (d). , And thereafter, the step (f) is performed, and then the step (g) is performed. 39. (a) The trajectory drawn by the surface when cut along an imaginary vertical plane passing through the center of the opening to be formed increases monotonically toward the center of the opening, or
Processing a thickness of a portion of a support on which an electron emission portion is to be formed so as to rise in a stepwise manner toward the center of the opening; and (b) forming a cathode electrode on the support. (C) a step of forming an insulating layer on the entire surface; (d) a step of forming a gate electrode on the insulating layer; (e) a step of forming an opening at least in the insulating layer; Forming a carbon-based thin film selective growth region on a portion of the cathode electrode where an electron emission portion is to be formed; and (g) forming an electron emission portion made of a carbon-based thin film on the carbon-based thin film selective growth region. Performing step (f) after step (b) and then performing step (g), or alternatively, performing step (f) after step (b) and performing step (f). g) is performed after step (e), or step (f) is performed after step (e). A method for manufacturing a cold cathode field emission device, wherein the method is performed after e), and thereafter, step (g) is performed. 40. After forming the gate electrode on the insulating layer, forming a second insulating layer on the insulating layer and the gate electrode, and then forming a focusing electrode on the second insulating layer, At least in the step of forming an opening in the insulating layer,
The second opening is formed in at least the second insulating layer, and the opening communicating with the second opening is formed in at least the insulating layer.
The method for manufacturing a cold cathode field emission device according to any one of the above items.