JP2000124401A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a built-in semiconductor element or a part to be exchanged even after a semiconductor is molded by covering a first surface side of a board with resin, and providing a second surface side of a board with a member for preventing warp of a board. SOLUTION: For example, a board 3 is mounted on a board holding member 7 formed of the same member as that of a lead frame 6 by means of bonding, brazing, etc. Furthermore, a wiring pattern 5 and the lead frame 6 are connected by a wire. One surface (semiconductor element mounting surface) of the board 3 is entirely covered with mold resin 4, a wiring pattern 5 is formed in an opening part of the board holding member 7, and a semiconductor package 11 is connected thereto by soldering. According to such a structure, a semiconductor package is continuously exposed to an outside of a semiconductor device until a final process, thereby replacing a defective semiconductor package just when it is detected in an inspection process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly to a high density and high reliability semiconductor device.

[0002]

2. Description of the Related Art A conventional semiconductor device is disclosed in
A structure is known in which a semiconductor element or a component is mounted on a substrate and then the entire semiconductor device is molded as disclosed in Japanese Patent Application Laid-Open No. 244747/1990.

[0003]

However, according to the conventional semiconductor device and the method of manufacturing the semiconductor device, a defect of a semiconductor element or a component built in the semiconductor device is found unless the semiconductor device is molded. However, there is a problem that defective parts cannot be replaced.

Further, in the conventional semiconductor device and the method of manufacturing the semiconductor device, when the area of the substrate is large, there is no vertical conduction of the molding material covering the semiconductor device. This has a problem that defects such as leak mode failure due to intrusion of water vapor and package cracks during reflow mounting are likely to occur.

Further, in the conventional semiconductor device and the method of manufacturing a semiconductor device, when a leaded component such as a semiconductor package is mounted, the interface between the substrate and the component is narrow, and the mold material is difficult to penetrate. However, there is a problem in that bubbles remain, and water vapor easily enters there, causing a failure such as a leak mode failure and a package crack during reflow mounting.

Further, in the conventional semiconductor device and the method of manufacturing the semiconductor device, the structure is such that the molding material directly contacts the wiring pattern having poor adhesion to the molding material. For example, separation occurs at the interface between the wiring pattern and the mold material due to the above-described problems, and there is a problem that defects such as leak mode failure due to invasion of water vapor and package cracks during reflow mounting are likely to occur.

Accordingly, an object of the present invention is to provide a semiconductor device having a structure in which a semiconductor element or a component incorporated in the semiconductor device can be replaced even after the semiconductor device is molded, and a method of manufacturing the semiconductor device. Is to make it happen.

Further, even when the area of the substrate is large, peeling is hardly generated at the interface between the substrate surface and the molding material. Even when a leaded component such as a semiconductor package is mounted, air bubbles are generated at the interface between the substrate and the component. Even if the wiring pattern area with poor adhesion to the molding material becomes large, peeling at the interface between the wiring pattern and the molding material hardly occurs, leak mode failure due to intrusion of water vapor, reflow mounting An object of the present invention is to realize a semiconductor device having a structure in which a defect such as generation of a package crack at the time does not occur, and a method of manufacturing the semiconductor device.

[0009]

In order to solve the above-mentioned problems, in a semiconductor device according to the present invention, a substrate, a semiconductor element mounted on the substrate, and an electrical connection between the semiconductor element formed on the substrate and the semiconductor element are provided. In a semiconductor device in which a part of the wiring pattern connected to the substrate, the substrate, the semiconductor element, and the wiring pattern is covered with a first resin, the first resin covers a part of the substrate, A means is provided for exposing at least a portion of the surface of the substrate.

A lead frame is provided on a side of the substrate and is electrically connected to the wiring pattern, and means for covering at least a part of the lead frame with a first resin is provided.

[0011] The first resin takes a means for completely covering one surface of the substrate and partially covering the other surface.

The first resin takes a means for covering a part of the substrate along four sides of the substrate.

The semiconductor element or the semiconductor encapsulant is placed on the surface of the substrate which is not covered with the first resin, and means for covering with the second resin is used.

The first resin is a transfer mold, and the second resin is covered by a potting mold.

[0015] The first resin or the second resin may include a means containing a substance having higher thermal conductivity than the first resin or the second resin.

Means is provided for attaching a heat radiating member on the first resin or the second resin.

A means for fixing the heat radiating member directly mounted on the semiconductor sealing object to the semiconductor device with the first resin or the second resin is provided.

In order to solve the above-mentioned problems, in a method of manufacturing a semiconductor device according to the present invention, a step of mounting a semiconductor element on a substrate and electrically connecting a wiring pattern formed on the substrate and the semiconductor element are performed. A method of manufacturing a semiconductor device having a step of connecting, and a step of partially covering the substrate, the semiconductor element, and the wiring pattern with a first resin, wherein an exposed portion of the substrate not covered by the first resin Means including a step of mounting a semiconductor element different from the semiconductor element is adopted.

After the step of mounting a semiconductor element different from the semiconductor element on the exposed portion of the substrate not covered by the first resin, a step of covering the exposed portion on the substrate with the second resin is provided. Take the means to have.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a substrate; a semiconductor element mounted on a first surface of the substrate; and a semiconductor element formed on the substrate and electrically connected to the semiconductor element. In a semiconductor device in which the connected wiring pattern and at least a part of the semiconductor element and the wiring pattern and both surfaces of the substrate are covered with resin,
The substrate is provided with a through hole, and a means is provided for allowing the resin to also exist in the through hole of the substrate.

A lead frame mounted on a side of the substrate and electrically connected to the wiring pattern, and means for covering at least a part of the lead frame with a resin are provided.

A semiconductor encapsulant or an electric component placed on the second surface of the substrate exists on the through hole, and the resin is applied to the substrate of the semiconductor encapsulant or the electric component. Means are provided between the mounting surface and the substrate.

Means are provided for making the through hole a through hole in the substrate.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a substrate; a semiconductor element mounted on a first surface of the substrate; and a semiconductor element formed on the substrate and electrically connected to the semiconductor element. In the semiconductor device in which the connected wiring pattern and at least a part of the semiconductor element and the wiring pattern and both surfaces of the substrate are covered with resin, an opening is formed in the wiring pattern of the substrate, A means is provided for allowing the resin to contact the substrate through the opening.

A means for covering a lead frame placed on the side of the substrate and electrically connected to the wiring pattern and covering at least a part of the lead frame with a resin is provided.

Means is provided for forming the opening in a mesh shape on the wiring pattern.

In order to solve the above-mentioned problems, in a method of manufacturing a semiconductor device according to the present invention, a step of mounting a semiconductor element on a substrate provided with a through hole; A step of electrically connecting the semiconductor element and a step of covering the substrate, the semiconductor element, and a part of the wiring pattern with a resin; Means having the step of simultaneously covering.

[0028] Means including a step of simultaneously covering the substrate and the through hole with the resin by transfer molding is adopted.

[0029]

According to the present invention, since the semiconductor element is mounted and a part of the substrate surface of the semiconductor device covered with the mold material is exposed, the semiconductor element and the component can be mounted on the exposed portion. Since the semiconductor element and the component mounted on the exposed portion are outside the molding material, the semiconductor device and the component incorporated in the semiconductor device can be replaced even after the semiconductor device is molded.

Further, in the present invention, a semiconductor element is mounted,
Since a through hole is made in the substrate of the semiconductor device covered with the mold material, the up-down conduction of the mold material through the through hole occurs, so even if the area of the substrate becomes large, peeling at the interface between the substrate surface and the mold material occurs. Is less likely to occur, and according to the present invention, a plastic package,
Since the tape carrier package or the electric component was present, the molding material wrapped around the gap between the substrate and the electric component through the through hole, no air bubbles remained at the interface between the substrate and the component, and in the present invention, An opening is formed in the wiring pattern on the substrate, and the molding material is brought into direct contact with the substrate through the opening, so that even if the area of the wiring pattern with poor adhesion to the molding material becomes large, good adhesion is obtained. Since the adhesion area between the substrate and the mold material can be increased, peeling at the interface between the wiring pattern and the mold material is less likely to occur, and water vapor enters the peeling portion and the bubble generating portion, and is included inside the semiconductor device. Since the promotion of ionization of the impurities does not occur, the occurrence of leak mode failure is less likely to occur, and the reflow mounting by the thermal expansion of the invading water vapor An effect that defects such as generation of package crack is not generated.

[0031]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional structural view of a semiconductor device of the present invention. In FIG. 1, reference numeral 2 denotes a semiconductor element;
The bonding pad formed on the surface of the semiconductor element and the wiring pattern 5 formed on the substrate 3 are connected by the wires. The substrate is a lead frame 6
Are mounted on the substrate holding member 7 formed of the same member as the above by bonding, brazing, or the like, and the wiring pattern and the lead frame are connected by wires. The substrate holding member may be formed integrally with the same member as the lead frame.
A suspended portion may be used. 4 for lead frame
Although two alloys have been frequently used, copper has also been used in response to the recent increase in heat generation of semiconductor elements.
As illustrated, a plurality of semiconductor elements are often mounted on the surface on which the semiconductor elements are mounted. Gold or aluminum is often used for the wire. The substrate is often made of ceramics, epoxy resin such as FR-4, polyimide resin, aramid resin, silicon or the like. As a wiring pattern, a copper foil, a conductive paste, a metal thin film, or the like is often used. In recent years, the operation speed of semiconductor devices has been increasing, and the power consumption has been increasing in proportion to the increase.Therefore, this heat dissipation measure is very important, but the substrate also has good thermal conductivity, such as ceramics, silicon, etc. In the case of an organic substrate, it is often the case that a metal such as a tungsten-based material having good thermal conductivity is used only in the die-attached portion of the semiconductor element, or the thermal conductivity is increased through the metal in the substrate inner layer. The semiconductor element and wires, bonding pads, substrate, part of the wiring pattern, and one side of the substrate shown in the figure are molded resin 4
High electrical insulation.
In addition, the structure protects the semiconductor element from the humidity environment. The molding resin is often epoxy, silicone, or polyimide, and may be integrally molded by transfer molding as shown in the figure, or only the important parts are molded by potting molding, and then integrally molded by transfer molding May be. A wiring pattern is also formed in the opening of the substrate holding member on the surface opposite to the semiconductor element mounting surface of the substrate, and the semiconductor package 11 is soldered thereto, conductive adhesive, anisotropic conductive material. They are connected by a bonding method such as a film. If a package with a particularly high defect rate is mounted as a semiconductor package, the semiconductor package will continue to be exposed to the outside of the semiconductor device until the final process. can do. Of course, a plurality of semiconductor packages may be mounted. The semiconductor package may be a tape carrier package or a flip chip. Further, in order to increase the mounting density, a plurality of them may be stacked and mounted, or may be stacked on the semiconductor element 2. By adopting such a structure, a semiconductor device mounting surface of the substrate is entirely covered with a highly reliable resin, and a semiconductor device structure in which a semiconductor package on the opposite surface can be easily replaced can be obtained. Further, after the semiconductor package is mounted on the back surface of the substrate, the back surface of the substrate may be further molded by transfer molding or potting mold. Then, the reliability of the semiconductor device is further improved. Furthermore, as shown in the figure, the substrate is not placed on the substrate holding member and the wiring pattern and the lead frame are not connected by wires.
The wiring pattern and the lead frame may be directly connected electrically and mechanically. As a means to join the board to the lead frame, gold plating is applied to the wiring pattern on the board, and gold plating, silver plating, tin plating, solder plating, etc. are applied in advance to the part to be joined with the wiring pattern on the lead frame. After aligning each other, heating and pressing are performed to join them. The wiring pattern side is not limited to gold plating,
Plating such as silver plating, tin plating, or solder plating may be performed, or gold plating may be applied to the wire bonding area to change the bonding portion and the type of plating. When bonding by applying heat and pressure, ultrasonic waves may be used, or bonding may be performed by single point bonding.

Although the structure including the lead frame in the semiconductor device has been described above, the structure without the lead frame is completely the same except that there is no lead frame from the described structure. Signal extraction from the wiring pattern may be performed by performing molding so that the wiring pattern is exposed, and then performing wire bonding, soldering, or the like from there.

Next, a method of manufacturing the semiconductor device described above will be described. First, the substrate 3 is die-attached to the substrate holding member 7, the semiconductor element 2 is die-attached to the substrate, and the semiconductor element and the wiring pattern 5, and the fingers of the lead frame 6 and the wiring pattern 5 are wire-bonded. At this time, the bonding area of the semiconductor element is
By firmly adsorbing the substrate to the jig, the capillary can be firmly received during bonding and wire bonding can be performed. Next, in this state, the lead frame and the substrate are electrically connected both by wires of the fingers and the wiring patterns, and mechanically connected by die attach to the substrate holding member integrated with the lead frame. , The entire semiconductor device can be easily handled. In this state, the semiconductor device is sandwiched by a mold having a mold space only on one side of the substrate, and the molding material 4 is formed into a mold shape as shown in FIG. 1 by transfer molding. This type is a normal QF
It differs from a mold used for molding a semiconductor device such as P in that it does not cover the entire surface of the semiconductor device. Of course, if the reliability level required for semiconductor devices is low,
It may be a step of molding with a potting mold. Next, the semiconductor package 11 is mounted on the back surface of the substrate,
Finally, the steps of trimming, plating, and forming the lead frame are performed, inspected, and finished as a final product. Since the semiconductor package is exposed on the back surface of the substrate up to the final product, the semiconductor package can be easily replaced. After the semiconductor package is mounted on the back surface of the substrate, a step of further molding the back surface of the substrate by transfer molding or potting mold may be added. of course,
After the inspection, the semiconductor package may be mounted on the back surface of the substrate. Then, it is not necessary to mount the semiconductor package on the defective semiconductor device.

Next, another embodiment of the present invention will be described with reference to FIG. FIG. 2 is a sectional structural view of the semiconductor device of the present invention. In the embodiment of FIG. 2, the semiconductor element 2 of the substrate 3 is covered with the molding material, and at the same time, the molding material is formed in a dam shape along four sides of the substrate on the surface opposite to the mounting surface of the semiconductor element. 1 can be realized by the same structure and manufacturing method as described with reference to FIG. In transfer molding, the semiconductor device is sandwiched by a mold having a mold space in a dam shape along one side of the substrate and four sides of the back surface of the substrate, and the molding material 4 is formed into a mold shape as shown in FIG. 2 by transfer molding. The reason why the mold material is formed in a dam shape along the four sides of the substrate is that when the structure is such that the mold material is present only on one side of the substrate as shown in FIG.
In the case of a soft substance such as this, it is to prevent the reliability of the semiconductor device from deteriorating due to thermal stress generated by warping of the substrate due to a bimetal effect due to a difference in thermal expansion coefficient between the mold material and the substrate due to a change in environmental temperature. That is, since the molding material existing in a dam shape along the four sides of the substrate becomes like a rib as a structural material, the warpage of the substrate can be minimized. The substrate is exposed at the openings between the mold materials existing in a dam shape along the four sides of the substrate, and the semiconductor package 11 can be mounted thereon in the same manner as described above. Reference numeral 12 denotes a potting mold material. By adopting such a structure, the connection portion of the semiconductor package is cut off from the external environment, so that the reliability is improved as compared with a case where the semiconductor package is not covered with the potting mold material. Can be. Of course, if heat generation of the semiconductor package poses a problem, a filler having high thermal conductivity may be mixed into the potting mold material.

Further, in the case where heat radiation more than that shown in FIG. 2 is required, the openings between the molding materials existing in a dam shape along the four sides of the substrate in FIG. 2 are further provided as shown in FIG. If a heat-dissipating member 13 such as a plate made of a metal such as iron, aluminum, or copper, or ceramics such as boron nitride or alumina having excellent heat-dissipating properties, or a heat-dissipating fin is bonded and attached with a potting mold material 12, a semiconductor can be obtained. The heat radiation from the package is better. Further, if the potting molding material is provided only between the opening between the molding materials existing in a dam shape along the substrate 4 and the semiconductor package, and the heat radiation member and the semiconductor package are in direct contact, the semiconductor is further improved. The heat radiation from the package is good.

FIG. 4 is a sectional structural view of a semiconductor device according to a further embodiment of the present invention. In FIG. 4, reference numeral 2 denotes a semiconductor element, and a bonding pad formed on the surface of the semiconductor element and a wiring pattern 5 formed on the substrate 3 are connected by one wire. The board is mounted on a board holding member 7 formed of the same member as the lead frame 6 by means of bonding, brazing, or the like, and the wiring pattern and the lead frame are connected by wires. Reference numeral 20 denotes a through hole formed in the substrate. The through hole is formed by a drill, a mold, a laser, or the like at the time of manufacturing the substrate, and may also serve as a reference hole or a through hole of the substrate.

The molding material 4 also exists in this through hole,
By the molding material in the through hole, conduction between the molding materials existing on the front side and the back side of the substrate is established. Of course, there may be a plurality of through holes. Therefore, even if the area of the substrate becomes large or a substrate made of polyimide or the like having poor adhesion to the mold material is used, peeling at the interface between the substrate surface and the mold material is less likely to occur. It goes without saying that the through-hole structure formed in the substrate is effective for all the structures described in this embodiment.

In order to obtain the structure shown in FIG. 4, in the method of manufacturing a semiconductor device according to the present invention, first, the substrate 3 is die-attached to the substrate holding member 7, and the semiconductor element 2 is die-attached to the substrate. The pattern 5 and the finger of the lead frame 6 and the wiring pattern 5 are wire-bonded. At this time, the entire surface of the bonding region of the semiconductor element is firmly attached to the jig, so that the capillary can be firmly received at the time of bonding and wire bonding can be performed. Next, in this state, the lead frame and the board are electrically connected by wires of the fingers and the wiring pattern, and are mechanically connected by die attach to the board holding member integrated with the lead frame.
The entire semiconductor device can be easily handled by handling the lead frame. In this state, for example, the semiconductor device is sandwiched by a mold having a standard outer shape determined by a standard such as EIAJ, and the molding material 4 is formed into a mold shape as shown in FIG. 1 by transfer molding. This mold is often the same as the mold used for molding semiconductor devices such as ordinary QFPs.
At this time, since the viscosity of the molding material before curing is extremely low, the molding material which covers the semiconductor device and also penetrates into the through hole at the same time. Vertical conduction is achieved by the material, even if the adhesion between the substrate and the mold material is somewhat poor,
The mold material continues to sandwich the substrate. Of course, if the reliability level required for the semiconductor device is low, a molding step using a potting mold may be used. Next, the semiconductor package 11 is mounted on the back surface of the substrate, and finally, a step of trimming, plating, and forming the lead frame is performed, and an inspection is performed to obtain a final product.

FIG. 5 is a sectional structural view of a semiconductor device according to the present invention, which shows still another embodiment. In FIG. 4, reference numeral 2 denotes a semiconductor element, and a bonding pad formed on the surface of the semiconductor element and a wiring pattern 5 formed on the substrate 3 are connected by one wire. The board is mounted on a board holding member 7 formed of the same member as the lead frame 6 by means of bonding, brazing, or the like, and the wiring pattern and the lead frame are connected by wires. Reference numeral 20 denotes a through hole formed in the substrate, and the semiconductor package 11 is mounted on the substrate on the through hole by the method described with reference to FIG. Usually, the gap between the substrate and the semiconductor package is very small, and if there is no through hole, when the semiconductor device is covered with the molding material of 4, an unfilled portion tends to remain in the gap between the substrate and the semiconductor package. However, according to the present invention, when the semiconductor device is covered with the mold material, the mold material flows into the gap between the substrate and the semiconductor package from the through hole, so that no unfilled portion is generated in the gap between the substrate and the semiconductor package. Needless to say, the through-hole structure opened in the substrate under the semiconductor package is effective for the structure in which the semiconductor package is present on all the back surfaces of the substrate described in this embodiment. The manufacturing method of the structure of FIG. 5 described above has the following features:
It is the same as described in FIG.

FIG. 6 is a partial front view of a semiconductor device during manufacture, showing still another embodiment of the present invention. In FIG. 6, reference numeral 2 denotes a semiconductor element. A bonding pad formed on the surface of the semiconductor element and a wiring pattern 5 formed on the substrate 3 are connected by one wire. The substrate may be further mounted on a lead frame. After the structure shown in FIG. 6 is obtained, the semiconductor device is covered with the molding material as described above. Reference numeral 21 denotes an opening in the pattern, and an opening formed in the wiring pattern. The substrate surface is exposed on the inside of the opening. The opening in the pattern is often formed simultaneously with the formation of the wiring pattern in the substrate manufacturing process. In general, the substrate surface has good adhesion to the molding material, and the wiring pattern has poor adhesion to the molding material. Can be. Usually, a solid pattern having a large area is often formed, for example, when it is desired to lower the impedance like a ground pattern or a power supply pattern and to improve the noise resistance of the semiconductor device. If an opening in the pattern is formed as in the formation portion, the adhesion to the mold material is improved over the entire surface of the substrate, which is more advantageous in reliability.

In many cases, other components such as a chip resistor, a chip capacitor, and a chip inductance are mounted on the substrate in the semiconductor device described above.

[0042]

As described above, the semiconductor device and the method of manufacturing the semiconductor device according to the present invention have a structure in which a semiconductor element is mounted and a part of the substrate surface of the semiconductor device covered with the mold material is exposed. Therefore, even after the semiconductor device is molded, the semiconductor element or the component built in the semiconductor device can be replaced, so that even if the semiconductor element or the component is defective, an expensive semiconductor with added value is added. Since the entire device does not have to be discarded, the cost of the semiconductor device can be significantly reduced.

Further, in the semiconductor device and the method of manufacturing the semiconductor device according to the present invention, the semiconductor element is mounted and the through hole is formed in the substrate of the semiconductor device covered with the mold material.
Even if the area of the substrate is large, peeling at the interface between the substrate surface and the molding material is less likely to occur, and in the semiconductor device and the method for manufacturing a semiconductor device of the present invention, the semiconductor element is mounted and covered with the molding material. Since a plastic package, a tape carrier package, or an electric component is present on the through hole of the substrate of the semiconductor device, no air bubbles remain at the interface between the substrate and the component, and furthermore, the semiconductor device and the semiconductor device of the present invention In the manufacturing method, the semiconductor element is mounted, an opening is formed in the wiring pattern on the substrate of the semiconductor device which is covered with the molding material, and the molding material is brought into direct contact with the substrate through the opening. Even if the area of the wiring pattern with poor adhesion to the material becomes large, peeling at the interface between the wiring pattern and the mold material is less likely to occur, and eventually, The penetration of water vapor into the separation part and the bubble generation part does not promote the ionization of impurities contained in the semiconductor device. This eliminates the occurrence of defects such as the occurrence of package cracks, thus providing an excellent effect that a highly reliable semiconductor device can be easily obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of the semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of the semiconductor device of the present invention.

FIG. 5 is a cross-sectional view of the semiconductor device of the present invention.

FIG. 6 is a partial front view of the semiconductor device in the course of manufacture according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wire 2 Semiconductor element 3 Substrate 4 Mold material 5 Wiring pattern 6 Lead frame 7 Substrate fixing member 11 Semiconductor package 12 Potting mold material 13 Heat radiating member 20 Through hole 21 Opening in pattern 22 Mesh forming part

[Procedure amendment]

[Submission date] December 20, 1999 (1999.12.
20)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

[Title of the Invention] Semiconductor device

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

[0009]

In order to solve the above problems, in a semiconductor device according to the present invention, a substrate, a lead positioned at least on a side of the substrate, and the substrate on a first surface side of the substrate. A first semiconductor element electrically connected;
An electrical connection portion electrically connecting the lead and the wiring pattern; a resin portion sealing the first surface side of the substrate; and prevention of warpage of the substrate provided on the second surface side of the substrate And a member for use.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010] In addition to the above, the warpage preventing member is characterized by using the same resin material as the resin portion sealing the first surface side.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

In any one of the above-mentioned contents, the warpage preventing member is formed so as to exclude a central area on a second surface side of the substrate and to extend along each peripheral side on a second surface side of the substrate. It is characterized by becoming.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Change

[Correction contents]

Further, a second semiconductor element is disposed in the central area on the second surface of the substrate, and the second semiconductor element is sealed with a potting mold material. .

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

[0013] Alternatively, a semiconductor package in which a semiconductor element is packaged is disposed in the central region on the second surface of the substrate, and at least the semiconductor package is electrically connected to the substrate on the second surface side. The connection portion is sealed with a potting mold material.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction contents]

[0014] In the above case, the potting mold material is characterized by using a material mixed with a filler having high thermal conductivity.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Change

[Correction contents]

Alternatively, a semiconductor package in which a semiconductor element is packaged is disposed in the central region on the second surface of the substrate, and at least the semiconductor package is electrically connected to the substrate on the second surface. The connecting portion is sealed with a potting mold material, and a heat radiating member is attached to the central region via the potting mold material.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction contents]

Alternatively, the height of the potting molding material is substantially equal to the height of the semiconductor package, and a heat radiating member is formed so as to be in contact with the upper surface of the semiconductor package.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction contents]

On the other hand, as another semiconductor device of the present invention,
A substrate, a lead positioned at least on a side of the substrate, a first semiconductor element electrically connected to the substrate on a first surface side of the substrate, and electrically connecting the lead and the wiring pattern. And a resin portion sealing the first surface side of the substrate, and along the sides around the second surface side of the substrate except for a central region on the second surface side of the substrate. And a dam-shaped mold portion formed as described above.

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction contents]

In the above structure, the resin portion and the mold portion are made of the same material.

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] 0019

[Correction method] Deleted

[Procedure amendment 14]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Deleted

[Procedure amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Deleted

[Procedure amendment 16]

[Document name to be amended] Statement

[Correction target item name] 0022

[Correction method] Deleted

[Procedure amendment 17]

[Document name to be amended] Statement

[Correction target item name] 0023

[Correction method] Deleted

[Procedure amendment 18]

[Document name to be amended] Statement

[Correction target item name] 0024

[Correction method] Deleted

[Procedure amendment 19]

[Document name to be amended] Statement

[Correction target item name] 0025

[Correction method] Deleted

[Procedure amendment 20]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Deleted

[Procedure amendment 21]

[Document name to be amended] Statement

[Correction target item name] 0027

[Correction method] Deleted

[Procedure amendment 22]

[Document name to be amended] Statement

[Correction target item name] 0028

[Correction method] Deleted

Claims (20)

[Claims] 1. A substrate, a semiconductor element mounted on the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, the substrate, the semiconductor element, and the wiring pattern Wherein the first resin covers a part of the substrate and at least a part of the surface of the substrate is exposed. . 2. A lead frame mounted on a side of the substrate and electrically connected to the wiring pattern, wherein at least a part of the lead frame is covered with a first resin. The semiconductor device according to claim 1, wherein: 3. The substrate according to claim 1, wherein the first resin completely covers one surface of the substrate and partially covers the other surface, and at least a part of the surface of the substrate is exposed.
Alternatively, the semiconductor device according to claim 2. 4. The semiconductor device according to claim 3, wherein said first resin covers a part of said substrate along four sides of said substrate. 5. The semiconductor according to claim 3, wherein the semiconductor element or the semiconductor encapsulation is placed on a surface of the substrate that is not covered with the first resin, and further covered with a second resin. apparatus. 6. The semiconductor device according to claim 5, wherein said first resin is covered with a transfer mold, and said second resin is covered with a potting mold. 7. The semiconductor device according to claim 5, wherein the first resin or the second resin contains a substance having higher thermal conductivity than the first resin or the second resin. . 8. On the first resin or the second resin,
The semiconductor device according to claim 5, wherein a heat radiating member is attached. 9. The semiconductor according to claim 5, wherein a heat radiating member directly mounted on the semiconductor encapsulation is fixed to the semiconductor device by the first resin or the second resin. apparatus. 10. A step of mounting a semiconductor element on a substrate, a step of electrically connecting a wiring pattern formed on the substrate and the semiconductor element, and a step of electrically connecting the semiconductor element to the wiring pattern formed on the substrate. A method of manufacturing a semiconductor device having a step of partially covering with a first resin, a step of mounting a semiconductor element different from the semiconductor element on an exposed portion of the substrate not covered with the first resin. A method for manufacturing a semiconductor device, comprising: 11. After the step of mounting a semiconductor element other than the semiconductor element on an exposed portion of the substrate not covered by the first resin, the exposed portion on the substrate is covered by a second resin. The method for manufacturing a semiconductor device according to claim 10, further comprising a step. 12. A substrate, a semiconductor element mounted on a first surface of the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, and the semiconductor element and the wiring In a semiconductor device in which at least a part of a pattern and both surfaces of the substrate are covered with a resin,
A semiconductor device, wherein a through hole is provided in the substrate, and the resin is also present in the through hole in the substrate. 13. A lead frame mounted on a side of the substrate and electrically connected to the wiring pattern, and at least a part of the lead frame is covered with a resin. 13. The semiconductor device according to claim 1. 14. A semiconductor encapsulant or an electric component placed on the second surface of the substrate exists on the through hole, and the resin is the semiconductor encapsulant or the electric component. 14. The semiconductor device according to claim 12, wherein the semiconductor device is provided between the substrate mounting surface and the substrate. 15. The device according to claim 12, wherein the through hole is a through hole of the substrate.
Alternatively, the semiconductor device according to claim 14. 16. A substrate, a semiconductor element mounted on a first surface of the substrate, a wiring pattern formed on the substrate and electrically connected to the semiconductor element, the semiconductor element and the wiring In a semiconductor device in which at least a part of a pattern and both surfaces of the substrate are covered with a resin,
An opening is formed in the wiring pattern of the substrate, and the resin is in contact with the substrate by the opening. 17. A lead frame mounted on a side of the substrate and electrically connected to the wiring pattern, and at least a part of the lead frame is covered with a resin. 13. The semiconductor device according to claim 1. 18. The semiconductor device according to claim 16, wherein the opening is formed in a mesh shape on the wiring pattern.
Or a semiconductor device according to claim 17. 19. A step of mounting a semiconductor element on a substrate provided with a through hole; a step of electrically connecting a wiring pattern formed on the substrate to the semiconductor element; A method of manufacturing a semiconductor device having a step of covering the semiconductor element and part of the wiring pattern with a resin, the method further comprising a step of simultaneously covering the substrate and the through hole with the resin. . 20. The method of manufacturing a semiconductor device according to claim 19, further comprising a step of simultaneously covering said substrate and said through hole with said resin by transfer molding.