JP2000091083A - Organic el display - Google Patents
Organic el displayInfo
- Publication number
- JP2000091083A JP2000091083A JP10254701A JP25470198A JP2000091083A JP 2000091083 A JP2000091083 A JP 2000091083A JP 10254701 A JP10254701 A JP 10254701A JP 25470198 A JP25470198 A JP 25470198A JP 2000091083 A JP2000091083 A JP 2000091083A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- display
- light
- wiring
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 239000007769 metal material Substances 0.000 claims abstract description 28
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
- H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機発光層を備え
て構成される有機ＥＬ素子を有した、有機ＥＬ（有機エ
レクトロルミネセンス）ディスプレイに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL (organic electroluminescence) display having an organic EL element provided with an organic light emitting layer.
【０００２】[0002]
【従来の技術】近年、自発光型フラットパネルディスプ
レイのニーズが高まっており、様々なディスプレイ表示
装置の開発が盛んに行われている。特に、液晶ディスプ
レイ（ＬＣＤ）やプラズマディスプレイ（ＰＤＰ）、有
機ＥＬディスプレイなどの開発が精力的に進められてお
り、なかでも、自発光型で高精細の表示も可能である方
式のものとして有機ＥＬディスプレイが注目され、盛ん
にその研究開発がなされている。2. Description of the Related Art In recent years, the need for self-luminous flat panel displays has been increasing, and various display devices have been actively developed. In particular, the development of a liquid crystal display (LCD), a plasma display (PDP), an organic EL display, etc. has been vigorously pursued. Among them, a self-luminous type which is capable of high-definition display is an organic EL display. Display has attracted attention, and its research and development has been actively pursued.
【０００３】有機ＥＬは、文献「Appl.Phys.Lett.51,91
3(1987) 」に示されるように、酸化インジウムスズ（Ｉ
ＴＯ）／有機正孔輸送層／有機発光層／陰極という素子
構造を持つものがＣ．Ｗ．Ｔａｎｇらによって１９８７
年に提案されたことをきっかけにして、一層広く研究開
発がなされるようになってきている。[0003] Organic EL is described in the document "Appl. Phys. Lett. 51, 91".
3 (1987) ".
TO) / organic hole transport layer / organic light emitting layer / cathode has a device structure of C.I. W. 1987 by Tang et al.
Research and development has become more widespread following the proposals made in the year.
【０００４】一般にＸＹマトリクス型の有機ＥＬディス
プレイは、図８に示すようにガラス等からなる透明基板
１の表面にデータラインとなるストライプ状の陽極配線
部２…が形成され、この上に正孔輸送層、有機蛍光体層
（有機発光層）などからなる有機層３…がストライプ状
に形成され、さらにこの上に金属等からなるストライプ
状の陰極配線部４…が形成されて構成されたものであ
る。陽極配線部２…と陰極配線部４…とは互いに直交し
て配置されており、この交差部において有機ＥＬ素子が
構成されている。有機層３…は、通常陰極配線部４…と
同じマスクを用いてパターニングされるため、陰極配線
部４…と同一の平面視形状に形成されている。In general, in an XY matrix type organic EL display, as shown in FIG. 8, a stripe-shaped anode wiring portion 2 serving as a data line is formed on the surface of a transparent substrate 1 made of glass or the like, and holes are formed thereon. An organic layer 3 composed of a transport layer, an organic phosphor layer (organic light emitting layer), etc. is formed in a stripe shape, and a stripe-shaped cathode wiring portion 4 composed of a metal or the like is further formed thereon. It is. The anode wiring portions 2 and the cathode wiring portions 4 are arranged orthogonal to each other, and an organic EL element is formed at the intersection. Since the organic layers 3 are usually patterned using the same mask as the cathode wiring portions 4, they are formed in the same plan view shape as the cathode wiring portions 4.
【０００５】陽極配線部２…は、図９に示すように発光
エリア（透光部）、非発光エリア共に同一の透明導電材
料からなっており、したがって単純なストライプの繰り
返しパターンに形成されたものとなっている。すなわ
ち、データラインは、通常陽極として機能する透明電極
部分を含んだ状態で一体に形成されるのである。なお、
陰極配線部４…上には、通常有機層３の劣化を防ぐた
め、絶縁材料等からなる保護膜（図示略）が形成されて
いる。As shown in FIG. 9, the anode wiring portions 2 are made of the same transparent conductive material in both the light emitting area (light transmitting section) and the non-light emitting area, and are therefore formed in a simple stripe repetition pattern. It has become. That is, the data line is formed integrally with the transparent electrode portion that normally functions as an anode. In addition,
A protective film (not shown) made of an insulating material or the like is usually formed on the cathode wiring portions 4 to prevent the organic layer 3 from deteriorating.
【０００６】ところで、このようなマトリクス型の有機
ＥＬディスプレイでは、前述したように陽極として機能
する透明電極部分を含んだ状態でデータライン（陽極配
線部２…）を形成するため、有機ＥＬからの発光を取り
出す透明電極（陽極）として例えば酸化インジウムスズ
（ＩＴＯ）を用いると、当然データライン、すなわち非
発光エリアの部分についてもこのＩＴＯで形成すること
になる。ところが、透明導電材料としては低抵抗である
ＩＴＯも、その電気抵抗率は１×１０-4Ωｃｍ程度であ
り、通常の金属材料に比べるとその電気抵抗率が１〜２
桁高いものとなっている。By the way, in such a matrix type organic EL display, as described above, since the data lines (anode wiring portions 2...) Are formed while including the transparent electrode portion functioning as the anode, the organic EL display is used. If, for example, indium tin oxide (ITO) is used as a transparent electrode (anode) for extracting light emission, a data line, that is, a portion of a non-light emitting area is naturally formed of this ITO. However, ITO, which has a low resistance as a transparent conductive material, also has an electrical resistivity of about 1 × 10 −4 Ωcm, and has an electrical resistivity of 1 to 2 as compared with a normal metal material.
It is an order of magnitude higher.
【０００７】[0007]
【発明が解決しようとする課題】しかして、大電流を用
いて駆動する電流駆動型のデバイスである有機ＥＬディ
スプレイでは、電気抵抗の高い材料によって配線（デー
タライン）を形成すると、その配線抵抗と電流の積に対
応する電位降下が生じ、配線自体に大きな電圧が印加さ
れてしまう。すると、その分有機ＥＬ自体に有効な電圧
が印加されないことになり、消費電力のロスを招いてし
まう。However, in an organic EL display which is a current-driven device driven by using a large current, if a wiring (data line) is formed of a material having a high electric resistance, the wiring resistance and the wiring resistance are reduced. A potential drop corresponding to the product of the current occurs, and a large voltage is applied to the wiring itself. As a result, an effective voltage is not applied to the organic EL itself, which results in a loss of power consumption.
【０００８】例えば、対角２０インチで一画素が１００
μｍ×３００μｍの高精細有機ＥＬディスプレイを想定
した場合、データラインをＩＴＯのみで作製すると、デ
ータライン１本あたりの配線抵抗は、データラインの線
幅を１００μｍ、膜厚を１５０ｎｍ、ストライプ長を３
０ｃｍと仮定すると、２×１０4 Ωとなる。なお、膜厚
を１５０ｎｍとしたのは、光線透過率との兼ね合いでこ
れをあまり厚くすることができないからである。For example, one pixel is 100 inches at a diagonal of 20 inches.
Assuming a high-resolution organic EL display of μm × 300 μm, if the data line is made of only ITO, the wiring resistance per data line is 100 μm for the data line, 150 nm for the film thickness, and 3 for the stripe length.
Assuming 0 cm, it is 2 × 10 4 Ω. The thickness is set to 150 nm because it cannot be made too thick in consideration of the light transmittance.
【０００９】また、有機ＥＬディスプレイを高輝度で光
らせるため、電流密度が１Ａ／ｃｍ2 の電流を一画素に
流すとすると、データライン１本あたり３×１０-4Ａの
電流が必要となる。このとき、画面中心部での電圧降下
は、 Ｖ（電圧降下）＝Ｉ（配線を流れる電流）×Ｒ（配線抵
抗） の式より、３Ｖと推算される。そして、全てのデータラ
インについて推算すると、全白ピーク時での画面全体の
配線抵抗による電力損失は、数Ｗにも及んでしまう。こ
の電力は全て熱になってしまうので、耐熱性の低い有機
ＥＬディスプレイにとっては、その寿命や信頼性に関し
て極めて不利になってしまうのである。Further, if a current having a current density of 1 A / cm 2 is supplied to one pixel in order to illuminate the organic EL display with high luminance, a current of 3 × 10 -4 A per data line is required. At this time, the voltage drop at the center of the screen is estimated to be 3 V from the equation: V (voltage drop) = I (current flowing through wiring) × R (wiring resistance). When the estimation is performed for all data lines, the power loss due to the wiring resistance of the entire screen at the time of the all white peak reaches several W. Since all of the electric power is converted to heat, an organic EL display having low heat resistance is extremely disadvantageous in terms of its life and reliability.
【００１０】近年、フラットパネルディスプレイは特に
大画面化の方向で開発が盛んになっており、有機ＥＬデ
ィスプレイも大型化が期待されている。しかしながら、
大画面化すると、前述の理由によってデータラインまた
は走査ラインの配線抵抗が高くなってしまい、消費電力
の増大が避けられなくなってしまう。[0010] In recent years, flat panel displays have been actively developed especially in the direction of larger screens, and organic EL displays are also expected to be larger. However,
When the screen is enlarged, the wiring resistance of a data line or a scanning line increases for the above-mentioned reason, and an increase in power consumption cannot be avoided.
【００１１】また、各画素を電圧駆動しようとすると、
ドライバー（電源）からの距離の遠い画素では、距離が
近い画素に比べて表示が暗くなるという、シェーディン
グと呼ばれる表示品位の不良が生じてしまう。電流駆動
を行う場合にはこの限りではないが、その場合、ドライ
バー回路が複雑になって高コスト化を招くといった別の
問題が起きてしまう。なお、高抵抗の配線材料を用いた
場合での、消費電力の増大の問題については、電圧駆
動、電流駆動のいずれにおいても同様に起こる。Further, when each pixel is driven by voltage,
At a pixel farther from the driver (power supply), a display quality defect called shading occurs, in which the display becomes darker than a pixel at a shorter distance. This is not the case when the current driving is performed, but in that case, another problem occurs in that the driver circuit becomes complicated and the cost is increased. Note that the problem of increase in power consumption when a high-resistance wiring material is used similarly occurs in both voltage driving and current driving.
【００１２】近年、情報の高密度化、多様化に伴い、有
機ＥＬディスプレイにおいても低電力損失でかつ高精
細、多色化（フルカラー化）などの高表示品位のものが
要求されてきている。しかしながら、従来では陽極側の
配線抵抗の低減化が行われておらず、電気抵抗の高い透
明電極材料によってそのまま配線（データライン）が形
成されていることから、ディスプレイパネルの大面積化
および省電力化は困難な状況であった。すなわち、消費
電力増大の問題が、大画面ディスプレイを実現するうえ
での大きな障壁となっているのである。In recent years, with the increase in density and diversification of information, there has been a demand for an organic EL display having low power loss, high definition, and high display quality such as multicolor (full color). However, conventionally, the wiring resistance on the anode side has not been reduced, and the wiring (data line) is directly formed of a transparent electrode material having a high electric resistance. The situation was difficult. That is, the problem of increased power consumption is a major barrier to realizing a large-screen display.
【００１３】本発明は前記事情に鑑みてなされたもの
で、その目的とするところは、高表示品位でありかつ大
面積、低消費電力の有機ＥＬディスプレイを提供するこ
とにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an organic EL display having a high display quality, a large area, and low power consumption.
【００１４】[0014]
【課題を解決するための手段】本発明の有機ＥＬディス
プレイでは、透明基板上に、ストライプ状の陽極配線部
と、少なくとも有機発光材料からなる層を有した有機層
と、陰極とがこの順に形成されて複数の有機ＥＬ素子が
配列した状態に形成されてなり、前記陽極配線部は、少
なくとも透光部となる部分が透明導電材料からなり、透
光部でない非発光エリアの部分が電気抵抗率２×１０-5
Ωｃｍ以下の金属材料を有してなっていることを前記課
題の解決手段とした。According to the organic EL display of the present invention, a stripe-shaped anode wiring portion, an organic layer having at least a layer made of an organic luminescent material, and a cathode are formed in this order on a transparent substrate. The anode wiring portion is formed of a transparent conductive material at least in a portion to be a light-transmitting portion, and a portion of a non-light-emitting area other than the light-transmitting portion is an electric resistivity. 2 × 10 -5
The solution to the above problem is to have a metal material of Ωcm or less.
【００１５】この有機ＥＬディスプレイの製造方法によ
れば、陽極配線部の透光部となる部分を透明導電材料か
ら形成し、透光部でない非発光エリアの部分を電気抵抗
率２×１０-5Ωｃｍ以下の金属材料によって形成したの
で、陽極配線部全体を透明導電材料で形成していた従来
に比べ、陽極側の配線抵抗が大幅に低減する。According to this method of manufacturing an organic EL display, the light-transmitting portion of the anode wiring portion is formed of a transparent conductive material, and the non-light-emitting area, which is not the light-transmitting portion, has an electric resistivity of 2 × 10 −5. Since it is formed of a metal material of Ωcm or less, the wiring resistance on the anode side is greatly reduced as compared with the conventional case where the entire anode wiring portion is formed of a transparent conductive material.
【００１６】[0016]
【発明の実施の形態】以下、本発明の有機ＥＬディスプ
レイを詳しく説明する。図１（ａ）、（ｂ）は本発明の
有機ＥＬディスプレイの一実施形態例であるＲＧＢ方式
によるフルカラーのＸＹマトリクス型有機ＥＬディスプ
レイを示す図であり、図１（ａ）中符号１０はＸＹマト
リクス型有機ＥＬディスプレイである。なお、図１
（ｂ）は、図１（ａ）におけるＢ−Ｂ線の矢印方向に見
た平面図である。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an organic EL display of the present invention will be described in detail. FIGS. 1A and 1B are views showing an RGB type full-color XY matrix type organic EL display according to an embodiment of the organic EL display of the present invention. In FIG. 1A, reference numeral 10 denotes XY. It is a matrix type organic EL display. FIG.
FIG. 2B is a plan view as seen in the direction of the arrow BB in FIG.
【００１７】この有機ＥＬディスプレイ１０は、透明ガ
ラスからなる透明基板１１の表面にデータラインとなる
ストライプ状の陽極配線部１２…が形成され、この上に
正孔輸送層、有機蛍光体層（有機発光層）などからなる
ストライプ状の有機層１３…が形成され、さらにこの上
に走査ラインとなるストライプ状の陰極配線部（陰極）
１４…が形成されて構成されたものである。陽極配線部
１２…と陰極配線部１４…とは、ＸＹマトリクスを形成
すべく互いに直交して配置されており、このような構成
のもとに、陽極配線部１２…と陰極配線部１４…との交
差部においては、陽極（陽極配線部１２）、有機層１
３、陰極（陰極配線部１４）からなる有機ＥＬ素子が形
成されている。In this organic EL display 10, a stripe-shaped anode wiring portion 12 serving as a data line is formed on the surface of a transparent substrate 11 made of transparent glass, and a hole transport layer and an organic phosphor layer (organic phosphor layer) are formed thereon. A stripe-shaped organic layer 13 composed of a light-emitting layer) is formed, and a stripe-shaped cathode wiring portion (cathode) serving as a scanning line is formed thereon.
.. Are formed. The anode wiring sections 12 and the cathode wiring sections 14 are arranged orthogonally to each other to form an XY matrix. Under such a configuration, the anode wiring sections 12 and the cathode wiring sections 14 are formed. At the intersection of the anode (anode wiring section 12) and the organic layer 1
3. An organic EL element including a cathode (cathode wiring section 14) is formed.
【００１８】陽極配線部１２は、本例においてはストラ
イプ状に形成された透明導電材料部１２Ａと、この透明
導電材料部１２Ａの所定位置を覆う金属材料部１２Ｂと
によって構成されたもので、図１（ｂ）に示すように有
機ＥＬ素子における有機層１３で発光した光を透過する
透光部（発光エリア）１２ａと、透光部でない非発光エ
リア（非透光部）１２ｂとからなるハイブリッド型の配
線方式をとるものである。透光部１２ａは、有機ＥＬ素
子において陽極として機能するもので、後述するように
前記金属材料部１２Ｂが開口したことによって有機層１
３に接するよう構成されたものである。この透光部１２
ａは、酸化インジウムスズ（ＩＴＯ）や酸化スズ（Ｓｎ
Ｏ2 ）、酸化亜鉛（ＺｎＯ）等の導電性の高い透明導電
材料から形成されるものであり、本例では酸化インジウ
ムスズによって形成されている。The anode wiring portion 12 is composed of a transparent conductive material portion 12A formed in a stripe shape in this example and a metal material portion 12B covering a predetermined position of the transparent conductive material portion 12A. As shown in FIG. 1B, a hybrid including a light-transmitting portion (light-emitting area) 12a that transmits light emitted from the organic layer 13 in the organic EL element and a non-light-emitting area (non-light-transmitting portion) 12b that is not a light-transmitting portion. The wiring method of the mold is adopted. The light transmitting portion 12a functions as an anode in the organic EL element, and the organic layer 1 is formed by opening the metal material portion 12B as described later.
3. This translucent part 12
a is indium tin oxide (ITO) or tin oxide (Sn
O 2 ), zinc oxide (ZnO), and other highly conductive transparent conductive materials. In this example, the conductive material is made of indium tin oxide.
【００１９】一方、非発光エリア１２ｂは、本例では透
光部１２ａを除く箇所、すなわち非透光部にて前記透明
導電材料部１２Ａを金属材料部１２Ｂで覆うことによっ
て形成されたものであり、したがって透明導電材料部１
２Ａと金属材料部１２Ｂとの積層構造によって形成され
たものである。金属材料部１２Ｂを形成する金属材料と
しては、表１に示すような２×１０-5Ωｃｍ以下の低抵
抗率の材料が好適に用いられる。なお、本例において
は、安価で比較的低抵抗の材料であるＡｌが用いられて
いる。また、これら以外の金属材料、あるいはこれら金
属の複数以上からなる合金、さらにはこれら金属が積層
されてなる多層膜であっても、２×１０-5Ωｃｍ以下の
低抵抗率であれば本発明において使用可能である。On the other hand, in this embodiment, the non-light emitting area 12b is formed by covering the transparent conductive material portion 12A with the metal material portion 12B at a portion other than the light transmitting portion 12a, that is, at the non-light transmitting portion. Therefore, the transparent conductive material portion 1
This is formed by a laminated structure of 2A and metal material portion 12B. As the metal material forming the metal material portion 12B, a material having a low resistivity of 2 × 10 −5 Ωcm or less as shown in Table 1 is preferably used. In this example, Al, which is an inexpensive and relatively low-resistance material, is used. Further, even if a metal material other than these, or an alloy composed of a plurality of these metals, or a multilayer film formed by laminating these metals is used, as long as it has a low resistivity of 2 × 10 −5 Ωcm or less, the present invention Can be used.
【表１】 [Table 1]
【００２０】前記有機層１３…は、赤色を発光する赤色
有機層と、緑色を発光する緑色有機層と、青色を発光す
る青色有機層とが同じ繰り返し順序に並列されて構成さ
れたものである。各色の有機層は、前記陽極配線部１２
の上にこれの長さ方向に沿って形成されたもので、透光
部１２ａ上においてこれに接した状態に形成されたもの
である。これら有機層１３…については、その材料の種
類、構成、膜厚、色素のドーピング形態等について特に
限定されることはない。例えば、緑色を発光する有機層
１３としては、正孔輸送層としてＴＰＤやα−ＮＰＤな
どが形成され、電子輸送層かつ発光層としてＡｌｑ３等
が形成された２層構造のものが用いられるが、これに限
定されることはない。また、発光色によっては、Ａｌｑ
３に適当な色素をドーピングされて用いられる。The organic layers 13 are composed of a red organic layer emitting red light, a green organic layer emitting green light, and a blue organic layer emitting blue light arranged in the same repetition order. . The organic layer of each color is formed on the anode wiring section 12.
On the light-transmitting portion 12a and in contact with the light-transmitting portion 12a. Regarding the organic layers 13, there is no particular limitation on the type, configuration, film thickness, dye doping form, and the like of the materials. For example, the organic layer 13 that emits green light has a two-layer structure in which TPD, α-NPD, or the like is formed as a hole transport layer, and Alq3 or the like is formed as an electron transport layer and a light emitting layer. It is not limited to this. Also, depending on the emission color, Alq
3 is used after being doped with an appropriate dye.
【００２１】陰極配線部１４…は一般にＡｌによって形
成されており、本例においてもＡｌによって形成されて
いる。なお、この陰極配線部１４…の形成材料として他
に例えば、ＡｌにＬｉを適当な方法でドーピングした材
料や、Ｍｇ−Ａｇ系の合金など周期律表第ＩＩａ族系ア
ルカリ土類金属含有の合金を用いることもできる。これ
らはいずれも仕事関数の低い材料であり、発光のしきい
値電圧を下げる効果を有している。陰極配線部１４…上
には、有機層１３…の劣化を防ぐため、絶縁材料等から
なる保護膜（図示略）が形成されている。The cathode wiring portions 14 are generally formed of Al, and in this embodiment, also formed of Al. In addition, as a material for forming the cathode wiring portions 14..., For example, a material in which Al is doped with Li by an appropriate method, an alloy containing a group IIa alkaline earth metal of the periodic table such as an Mg-Ag alloy, or the like. Can also be used. All of these are materials having a low work function and have an effect of lowering the threshold voltage of light emission. A protective film (not shown) made of an insulating material or the like is formed on the cathode wiring portions 14 to prevent the organic layers 13 from deteriorating.
【００２２】このような構成の有機ＥＬディスプレイ１
０を作製するには、まず、図２（ａ）に示すようにガラ
ス等からなる透光性（すなわち透明）の透明基板１１を
用意し、この透明基板１１の上に透明導電材料層（図示
略）を成膜する。そして、この透明導電材料層をストラ
イプ状、すなわちＸＹマトリクスタイプのディスプレイ
におけるデータラインのパターン形状にパターニング
し、透明導電材料部１２Ａ…を複数並列した状態に形成
する。ここで、透明導電材料層の成膜法としては、ＤＣ
およびＲＦマグネトロンスパッタ法が一般的であるが、
ＣＶＤ法や反応性真空蒸着法等を採用することもでき
る。また、透明導電材料層のパターニング方法について
も特に限定されることなく、ドライエッチング法、ウエ
ットエッチング法のいずれも採用可能である。The organic EL display 1 having such a configuration
In order to manufacture the transparent substrate 11, first, as shown in FIG. 2A, a transparent (ie, transparent) transparent substrate 11 made of glass or the like is prepared, and a transparent conductive material layer (shown in FIG. (Abbreviation). Then, this transparent conductive material layer is patterned into a stripe shape, that is, a data line pattern shape in an XY matrix type display, and a plurality of transparent conductive material portions 12A are formed in parallel. Here, as a method of forming the transparent conductive material layer, DC
And RF magnetron sputtering method is common,
A CVD method, a reactive vacuum evaporation method, or the like can also be employed. Further, the method of patterning the transparent conductive material layer is not particularly limited, and any of a dry etching method and a wet etching method can be adopted.
【００２３】次に、透明導電材料部１２Ａ…を覆って透
明基板１１上にＡｌからなる低抵抗金属層を形成し、さ
らにこれを図１（ｂ）に示したように透光部１２ａ上を
開口し透明導電材料部１２Ａを露出した状態にパターニ
ングして図２（ｂ）に示すように金属材料部１２Ｂを形
成し、これにより透光部１２ａと非発光エリア１２ｂと
からなるハイブリッド型配線方式の陽極配線部１２…を
得る。低抵抗金属層のパターニング方法については特に
限定されないものの、得られた金属材料部１２Ｂの上に
形成される陰極配線部１４…の断線の抑制や、陰極配線
部１４と陽極配線部１２との間のショート防止のため、
透光部（発光エリア）１２ａ周辺のＡｌ（金属材料部１
２Ｂ）の側端部については、上から下に行くに連れて陽
極配線部１２の幅が広がるようにテーパ状にエッチング
することが望ましい。Next, a low-resistance metal layer made of Al is formed on the transparent substrate 11 so as to cover the transparent conductive material portions 12A... A hybrid wiring system comprising a light transmitting portion 12a and a non-light emitting area 12b is formed by patterning the opening and exposing the transparent conductive material portion 12A so as to expose the transparent conductive material portion 12A as shown in FIG. 2B. Are obtained. The method of patterning the low-resistance metal layer is not particularly limited, but it is possible to prevent disconnection of the cathode wiring portions 14 formed on the obtained metal material portion 12B and to prevent the cathode wiring portions 14 and the anode wiring portion 12 from being disconnected. To prevent short circuit
Al (metal material portion 1) around light transmitting portion (light emitting area) 12a
2B), it is desirable to etch in a tapered shape so that the width of the anode wiring portion 12 increases from the top to the bottom.
【００２４】次いで、有機正孔輸送膜（図示略）や有機
蛍光体膜（図示略）等の積層膜（図示略）からなる発光
材料層（図示略）の成膜、およびこれのパターニングを
Ｒ（赤）、Ｇ（緑）、Ｂ（青）のそれぞれについて順次
行い、図２（ｃ）に示すように赤色を発光する有機層１
３、緑色を発光する有機層１３、青色を発光する有機層
１３をそれぞれ所定パターン、すなわち陽極配線部１２
上においてこれの長さ方向に沿い、かつ透光部１２ａ上
において透明導電材料部１２Ａに接したパターンに形成
する。Next, a light emitting material layer (not shown) composed of a laminated film (not shown) such as an organic hole transport film (not shown) and an organic phosphor film (not shown) is formed and patterned. (Red), G (Green), and B (Blue) are sequentially performed, and the organic layer 1 that emits red light as shown in FIG.
3, the organic layer 13 for emitting green light and the organic layer 13 for emitting blue light are each provided in a predetermined pattern,
It is formed in a pattern along the length direction thereof on the upper side and in contact with the transparent conductive material portion 12A on the light transmitting portion 12a.
【００２５】これら有機層１３については、前述したよ
うにその材料の種類、構成、膜厚、色素のドーピング形
態等について特に限定されることはなく、また成膜法に
ついては、材料として低分子有機発光材料を用いた場
合、通常は真空蒸着法が採用される。したがって、ディ
スプレイパネルを多色化にするべく、赤色、緑色、青色
の三種類の有機層を形成するには、真空蒸着による成膜
時に、蒸着マスクを用いて所定の場所のみに特定の発光
材料を成膜するようにし、これを複数回（３回）繰り返
してＲＧＢのパターンをそれぞれに形成すればよいので
ある。As described above, the type, structure, film thickness, dye doping form, etc. of the material of the organic layer 13 are not particularly limited. When a light emitting material is used, a vacuum evaporation method is usually employed. Therefore, in order to form three types of organic layers of red, green, and blue in order to make the display panel multi-colored, a specific luminescent material is used only at a predetermined place using a deposition mask during film formation by vacuum deposition. Is formed, and this is repeated a plurality of times (three times) to form RGB patterns respectively.
【００２６】次いで、図１（ａ）に示したように前記陽
極配線部１２…、有機層１３…に直交するストライプ状
の陰極配線部１４…を形成する。この陰極配線部１４…
の配線パターニングとしては、該陰極配線部１４…がＸ
Ｙマトリクスの走査線として用いられるようにして行
う。これら陰極配線部１４…の形成方法としては、マス
クを用いてパターン形成する真空蒸着法が好適に採用さ
れるが、他にスパッタ法などを用いることもできる。Next, as shown in FIG. 1A, striped cathode wiring portions 14 orthogonal to the anode wiring portions 12 and the organic layers 13 are formed. This cathode wiring section 14 ...
The wiring pattern of the cathode wiring portions 14
This is performed so as to be used as a scanning line of the Y matrix. As a method for forming the cathode wiring portions 14, a vacuum deposition method for forming a pattern using a mask is suitably adopted, but a sputtering method or the like can also be used.
【００２７】その後、有機層１３…が空気中の酸素や水
分に触れないようにこれらを保護するため、例えば低温
で低ダメージの成膜が可能な材料によってオーバーコー
ト用の保護膜を形成することなどにより、本発明の有機
ＥＬディスプレイ１０を得る。After that, in order to protect the organic layers 13 from being exposed to oxygen and moisture in the air, for example, a protective film for overcoating is formed by a material capable of forming a film with low damage at a low temperature. Thus, the organic EL display 10 of the present invention is obtained.
【００２８】このような構成の有機ＥＬディスプレイ１
０にあっては、陽極配線部１２の透光部１２ａとなる部
分を透明導電材料部１２Ａで形成し、 透光部１２ａで
ない非発光エリア１２ｂを透明導電材料部１２Ａと電気
抵抗率２×１０-5Ωｃｍ以下の金属材料部１２Ｂとの積
層膜によって形成したので、陽極配線部全体を透明導電
材料で形成していた従来に比べ、陽極側の配線抵抗を大
幅に低減することができる。The organic EL display 1 having such a configuration
In the case of No. 0, a portion to be the light transmitting portion 12a of the anode wiring portion 12 is formed by the transparent conductive material portion 12A, and the non-light emitting area 12b which is not the light transmitting portion 12a is formed by the transparent conductive material portion 12A and the electric resistivity 2 × 10 2. Since the anode wiring portion is formed of a laminated film with the metal material portion 12B of -5 Ωcm or less, the wiring resistance on the anode side can be significantly reduced as compared with the related art in which the entire anode wiring portion is formed of a transparent conductive material.
【００２９】このような配線抵抗の低減効果について以
下に詳述する。有機ＥＬディスプレイ１０の一画素あた
りの陽極配線部１２の平面図を図３に示す。図３に示す
ように、一画素あたりの配線長をＬ、陽極配線部１２の
幅をＷ、陽極配線部１２における透光部１２ａのスケー
ルファクターをｘ（＜１）とする（便宜上、幅方向のス
ケールファクターと長さ方向のスケールファクターとを
同一にする。したがって透光部１２ａの面積は陽極配線
部１２の面積のｘ2 倍となる）と、このときの配線抵抗
は以下のように推算される。The effect of reducing the wiring resistance will be described in detail below. FIG. 3 shows a plan view of the anode wiring section 12 per pixel of the organic EL display 10. As shown in FIG. 3, the wiring length per pixel is L, the width of the anode wiring section 12 is W, and the scale factor of the translucent section 12a in the anode wiring section 12 is x (<1) (for convenience, in the width direction). to the the scale factor and the longitudinal direction of the scale factor to the same. Therefore the area of the transmissive portion 12a is twice x the area of the anode wiring portion 12) and, estimated as wiring resistance following this time Is done.
【００３０】陽極配線部１２に用いられたＩＴＯ（透明
導電材料部１２Ａ）の抵抗率および低抵抗金属材料（金
属材料部１２Ｂ）の抵抗率をそれぞれρITO およびρM
とすると、 ρM ＝α・ρITO （ただし、α≪１） となる。
また、ＩＴＯの膜厚と低抵抗金属の膜厚とを同じとす
る。このとき、陽極配線部１２における一画素ピッチあ
たりの配線抵抗ＲH と、ＩＴＯのみによる一画素ピッチ
あたりの配線抵抗ＲITO との比を求めると、 （ＲH ／ＲITO ）＝α・｛１−ｘ＋（α・ｘ）／（１−
ｘ＋α・ｘ）｝ となる。ＩＴＯの抵抗率を１×１０-4Ωｃｍとし、メタ
ル材料の抵抗率を２×１０-6Ωｃｍとすると、α＝０．
０２となる。The resistivity of the ITO (transparent conductive material portion 12A) and the resistivity of the low-resistance metal material (metal material portion 12B) used for the anode wiring portion 12 are ρ ITO and ρ M , respectively.
Then, ρ M = α · ρ ITO (where α≪1).
The thickness of the ITO and the thickness of the low-resistance metal are the same. At this time, when the ratio of the wiring resistance R H per pixel pitch in the anode wiring section 12 to the wiring resistance R ITO per pixel pitch due to ITO alone is calculated, (R H / R ITO ) = α · ｛1 −x + (α · x) / (1−
x + α · x)｝. If the resistivity of ITO is 1 × 10 −4 Ωcm and the resistivity of the metal material is 2 × 10 −6 Ωcm, α = 0.
02.
【００３１】本発明による陽極配線部１２の配線抵抗低
減効果を表す一例として、このときの（ＲH ／ＲITO ）
のＩＴＯのスケールファクターｘ依存性を図４に示す。
図４に示すように、ｘを９０％にすると、配線抵抗ＲH
はＩＴＯのみの場合（ＲITO ）の１５．４％になる。さ
らに、８０％に縮小すると７．４％となり、配線抵抗Ｒ
H が１桁以上低下することになる。したがって、この配
線抵抗の低下に伴って消費電力のロスも１桁以上低下す
ることになるのである。As an example showing the effect of reducing the wiring resistance of the anode wiring portion 12 according to the present invention, (R H / R ITO )
FIG. 4 shows the dependence of ITO on the scale factor x.
As shown in FIG. 4, when x is set to 90%, the wiring resistance R H
Is 15.4% of the case of only ITO (R ITO ). Further, when reduced to 80%, it becomes 7.4%, and the wiring resistance R
H will decrease by one digit or more. Therefore, the loss of power consumption is reduced by one digit or more with the reduction of the wiring resistance.
【００３２】なお、これよりｘを小さな値にしてさらに
配線抵抗を低減しようとしても、図４に示すように大き
な変化、すなわち大きな効果がなくなる。よって、極端
にｘを小さくするのは、かえって発光エリア（透光部１
２ａ）における電流密度を上げることになり、これが有
機ＥＬ材料の劣化の原因ともなるので好ましくない。以
上は、画素部のみについて推算した結果であるが、ドラ
イバー部への引出し配線にも低抵抗の金属材料を用いれ
ば、さらなる抵抗の低減化を図ることができる。If the value of x is set to a smaller value to further reduce the wiring resistance, as shown in FIG. 4, a large change, that is, a large effect is lost. Therefore, when the value of x is extremely reduced, the light emitting area (the light transmitting portion 1) is rather changed.
The current density in 2a) is increased, which is not preferable because it causes deterioration of the organic EL material. The above is the result of estimation for only the pixel portion. However, if a low-resistance metal material is used for the lead wiring to the driver portion, the resistance can be further reduced.
【００３３】なお、本発明は前記実施形態例に限定され
ることなく、例えば陽極配線部１２の形態についても種
々のバリエーションが可能である。例えば、陽極配線部
のパターンとして、図５に示すように、透光部２０ａを
陽極配線部２０の片側に配置し、その反対側およびこれ
ら透光部２０ａ、２０ａ間を金属材料部２０Ｂで覆って
なる非発光エリア２０ｂとしてもよい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible for the form of the anode wiring section 12, for example. For example, as a pattern of the anode wiring section, as shown in FIG. 5, the light transmitting section 20a is arranged on one side of the anode wiring section 20, and the opposite side and the space between these light transmitting sections 20a, 20a are covered with the metal material section 20B. The non-light-emitting area 20b may be used.
【００３４】また、図６（ａ）、（ｂ）に示すように、
予め透明導電材料をストライプ状でなく発光エリアのみ
に残るようにアイランド化して島状の透明導電材料部２
１Ａを配列形成し、これら透明導電材料部２１Ａ、２１
Ａ間およびその両側部を覆った状態に金属材料部２１Ｂ
を形成し、陽極配線部２１としてもよい。As shown in FIGS. 6A and 6B,
An island-shaped transparent conductive material portion 2 is formed in advance so that the transparent conductive material is islanded so as to remain only in the light emitting area instead of the stripe shape.
1A are formed in an array, and these transparent conductive material portions 21A, 21A
A and the metal material portion 21B
To form the anode wiring portion 21.
【００３５】また、金属材料部を形成する材料として耐
熱性の高い金属材料を用いるならば、図７（ａ）、
（ｂ）に示すようにこの材料を透明基板１１上に成膜
し、続いてこれをパターニングして画素発光エリア（透
光部）を窓あけ（開口）した低抵抗金属からなる金属材
料部２２Ｂに形成し、その後、この上にＩＴＯ等からな
る透明導電材料部２２Ａを形成して陽極配線部２２とし
てもよい。この場合にも、図７（ａ）に示したように透
明導電材料部２２Ａを下地となる金属材料部２２Ｂに沿
ってストライプ状に形成してもよく、また、図７（ｂ）
に示したように発光エリア（透光部）のみとなるように
アイランド化して島状に形成してもよい。If a metal material having high heat resistance is used as the material for forming the metal material portion, FIG.
As shown in (b), this material is formed on the transparent substrate 11 and subsequently patterned to form a metal material portion 22B made of a low-resistance metal having a window (opening) in a pixel light emitting area (light transmitting portion). Then, a transparent conductive material portion 22A made of ITO or the like may be formed thereon to form the anode wiring portion 22. Also in this case, the transparent conductive material portion 22A may be formed in a stripe shape along the metal material portion 22B serving as a base as shown in FIG.
As shown in (1), an island may be formed by forming an island so as to include only a light emitting area (light transmitting portion).
【００３６】また、前記実施形態例では陽極配線部１２
上に直接有機層１３を形成したが、陽極（陽極配線部１
２）と陰極（陰極配線部１４）との間の電気的な短絡を
防止するため、特に陽極配線部１２の側端部を覆った状
態で隣り合う陽極配線部１２、１２間に、シリコン酸化
物（ＳｉＯx ）、シリコン窒化物（Ｓｉx Ｎy ）、シリ
コン酸窒化物（ＳｉＯx Ｎy ）、アルミニウム酸化物
（Ａｌx Ｏy ）等の無機絶縁材料からなる無機絶縁膜を
形成してもよく、このように無機絶縁膜を形成すれば、
短絡防止により高い信頼性を得ることができる。In the embodiment, the anode wiring section 12
Although the organic layer 13 was formed directly on the anode,
In order to prevent an electrical short circuit between 2) and the cathode (cathode wiring section 14), silicon oxide is preferably applied between the adjacent anode wiring sections 12 while covering the side ends of the anode wiring section 12. things (SiO x), silicon nitride (Si x N y), silicon oxynitride (SiO x N y), aluminum oxide (Al x O y) has an inorganic inorganic insulating film made of an insulating material such as If you form the inorganic insulating film like this,
High reliability can be obtained by short circuit prevention.
【００３７】また、前記実施形態例では透明基板１１と
して透明ガラスを用いたが、本発明は透明基板としてそ
の材質や厚さ、サイズについて特に限定されることな
く、例えば、透光性のあるポリエステルフィルムのよう
な有機高分子材料を透明基板に用いてもよい。また、前
記実施形態例では、特にＲＧＢ３色をもつフルカラーデ
ィスプレイについて延べたが、発光色についてもこれに
限定されることはない。また、有機層１３および陰極配
線部１４のパターニング方法についても、マスク蒸着に
よる方法以外に、リソグラフィー技術とドライエッチン
グ技術によるパターニング法など、従来公知の種々の技
術が採用可能である。Although the transparent glass is used as the transparent substrate 11 in the above embodiment, the present invention is not limited to the material, thickness and size of the transparent substrate. An organic polymer material such as a film may be used for the transparent substrate. Further, in the above-described embodiment, the full color display having three colors of RGB is particularly provided, but the emission color is not limited to this. As for the patterning method of the organic layer 13 and the cathode wiring section 14, various conventionally known techniques such as a patterning method using a lithography technique and a dry etching technique can be adopted in addition to a method using a mask evaporation.
【００３８】[0038]
【発明の効果】以上説明したように本発明の有機ＥＬデ
ィスプレイは、陽極配線部の透光部となる部分を透明導
電材料から形成し、透光部でない非発光エリアの部分を
電気抵抗率２×１０-5Ωｃｍ以下の金属材料によって形
成したものであるから、陽極配線部全体を透明導電材料
で形成していた従来に比べ、陽極側の配線抵抗の大幅に
低減することができ、これにより優れた表示品位を確保
しつつ、大面積化および省電力化を図ることができる。As described above, in the organic EL display of the present invention, the light-transmitting portion of the anode wiring portion is formed of a transparent conductive material, and the non-light-emitting area, which is not the light-transmitting portion, has an electric resistivity of 2%. Since it is formed of a metal material of × 10 −5 Ωcm or less, the wiring resistance on the anode side can be greatly reduced as compared with the conventional method in which the entire anode wiring portion is formed of a transparent conductive material. A large area and power saving can be achieved while ensuring excellent display quality.
【図１】（ａ）、（ｂ）は本発明の有機ＥＬディスプレ
イの一実施形態例を示す図であり、（ａ）は有機ＥＬデ
ィスプレイの発光エリアの概略構成を示す要部側断面
図、（ｂ）は（ａ）におけるＢ−Ｂ線の矢印方向に見た
平面図である。FIGS. 1A and 1B are diagrams showing an embodiment of an organic EL display according to the present invention, wherein FIG. 1A is a cross-sectional side view of a main part showing a schematic configuration of a light emitting area of the organic EL display; (B) is a plan view as seen in the direction of the arrow BB in (a).
【図２】（ａ）〜（ｃ）は、図１に示した有機ＥＬディ
スプレイの製造方法を工程順に説明するための要部側断
面図である。FIGS. 2 (a) to 2 (c) are cross-sectional side views of a main part for describing a method of manufacturing the organic EL display shown in FIG. 1 in the order of steps.
【図３】図１に示した有機ＥＬディスプレイの、一画素
あたりの陽極配線部を示す平面図である。FIG. 3 is a plan view showing an anode wiring portion per pixel of the organic EL display shown in FIG. 1;
【図４】（ＲH ／ＲITO ）と透光部のスケールファクタ
ーｘとの関係を示すグラフ図である。FIG. 4 is a graph showing a relationship between (R H / R ITO ) and a scale factor x of a light transmitting part.
【図５】本発明の変形例を示す図であって、陽極配線部
のパターンを示す平面図である。FIG. 5 is a view showing a modification of the present invention, and is a plan view showing a pattern of an anode wiring portion.
【図６】本発明の変形例を示す図であって、（ａ）は一
画素あたりの陽極配線部を示す平面図、（ｂ）は一画素
あたりの陽極配線部を示す側断面図である。6A and 6B are diagrams showing a modification of the present invention, wherein FIG. 6A is a plan view showing an anode wiring portion per pixel, and FIG. 6B is a side sectional view showing an anode wiring portion per pixel. .
【図７】（ａ）、（ｂ）はいずれも本発明の変形例を示
す図であって、一画素あたりの陽極配線部をその幅方向
で断面視したときの側断面図である。FIGS. 7A and 7B are diagrams showing modified examples of the present invention, and are side sectional views of the anode wiring portion per pixel when viewed in a cross section in the width direction thereof.
【図８】従来の有機ＥＬディスプレイの一例の概略構成
を示す要部側断面図である。FIG. 8 is a sectional side view of a main part showing a schematic configuration of an example of a conventional organic EL display.
【図９】従来の有機ＥＬディスプレイにおける陽極配線
部のパターンを示す平面図である。FIG. 9 is a plan view showing a pattern of an anode wiring portion in a conventional organic EL display.
１０…有機ＥＬディスプレイ、１１…透明基板、１２，
２０，２１，２２…陽極配線部、１２Ａ，２１Ａ，２２
Ａ…透明導電材料部、１２Ｂ，２０Ｂ，２１Ｂ，２２Ｂ
…金属材料部、１２ａ，２０ａ…透光部、１２ｂ，２０
ｂ…非発光エリア、１３…有機層、１４…陰極配線部10 ... organic EL display, 11 ... transparent substrate, 12,
20, 21, 22,... Anode wiring part, 12A, 21A, 22
A: Transparent conductive material part, 12B, 20B, 21B, 22B
... Metal material part, 12a, 20a ... Translucent part, 12b, 20
b: non-light-emitting area, 13: organic layer, 14: cathode wiring section
フロントページの続き (72)発明者 中山 徹生 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 (72)発明者 関谷 光信 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 (72)発明者 笹岡 龍哉 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 Ｆターム(参考） 3K007 AB00 AB04 AB05 BA06 CA01 CA06 CB01 DA00 DB03 EB00 FA01 5C094 AA02 AA14 AA22 BA27 CA19 EA05 EB02 FB01 Continued on the front page (72) Inventor Tetsuo Nakayama 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Mitsunobu Sekiya 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sonny shares In-house (72) Inventor Tatsuya Sasaoka 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo F-term in Sony Corporation (reference) 3K007 AB00 AB04 AB05 BA06 CA01 CA06 CB01 DA00 DB03 EB00 FA01 5C094 AA02 AA14 AA22 BA27 CA19 EA05 EB02 FB01
Claims (3)
部と、少なくとも有機発光材料からなる層を有した有機
層と、陰極とがこの順に形成されて複数の有機ＥＬ素子
が配列した状態に形成されてなり、 前記陽極配線部は、少なくとも透光部となる部分が透明
導電材料からなり、透光部でない非発光エリアの部分が
電気抵抗率２×１０-5Ωｃｍ以下の金属材料を有してな
っていることを特徴とする有機ＥＬディスプレイ。1. A state in which a stripe-shaped anode wiring portion, an organic layer having at least a layer made of an organic light emitting material, and a cathode are formed in this order on a transparent substrate, and a plurality of organic EL elements are arranged. In the anode wiring portion, at least a portion that becomes a light-transmitting portion is made of a transparent conductive material, and a non-light-emitting area portion that is not a light-transmitting portion has a metal material having an electric resistivity of 2 × 10 −5 Ωcm or less. An organic EL display, comprising:
ｕ、Ｎｉ、Ｃｏ、Ｆｅ、Ｍｏ、Ｎｂ、Ｐｄ、Ｐｔのうち
の一種あるいは複数種であることを特徴とする請求項１
記載の有機ＥＬディスプレイ。2. The method according to claim 1, wherein the metal material is Ag, Al, Cu, A
2. The semiconductor device according to claim 1, wherein the material is at least one of u, Ni, Co, Fe, Mo, Nb, Pd, and Pt.
The organic EL display according to the above.
部分の下地の一部にＣｒの酸化膜が設けられていること
を特徴とする請求項１記載の有機ＥＬディスプレイ。3. The organic EL display according to claim 1, wherein a Cr oxide film is provided on a part of a base of a non-light-emitting area in said anode wiring portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254701A JP2000091083A (en) | 1998-09-09 | 1998-09-09 | Organic el display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254701A JP2000091083A (en) | 1998-09-09 | 1998-09-09 | Organic el display |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008227850A Division JP4557069B2 (en) | 2008-09-05 | 2008-09-05 | Organic EL display and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000091083A true JP2000091083A (en) | 2000-03-31 |
Family
ID=17268663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10254701A Pending JP2000091083A (en) | 1998-09-09 | 1998-09-09 | Organic el display |
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| Country | Link |
|---|---|
| JP (1) | JP2000091083A (en) |
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| US9412804B2 (en) | 2002-04-26 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method of the same |
| JP2004031201A (en) * | 2002-06-27 | 2004-01-29 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| WO2004045253A1 (en) * | 2002-11-11 | 2004-05-27 | Matsushita Electric Industrial Co., Ltd. | Organic light emitting element, production method oforganic light emitting element, image forming device, and display unit |
| US7825593B2 (en) | 2004-03-23 | 2010-11-02 | Lg Electronics Inc. | Organic electro-luminescence display device and method of fabricating the same |
| JP2005276828A (en) * | 2004-03-23 | 2005-10-06 | Lg Electron Inc | Organic electroluminescence element and its manufacturing method |
| KR100736008B1 (en) | 2004-06-07 | 2007-07-06 | 가시오게산키 가부시키가이샤 | Display device and method of manufacturing the same |
| US8324801B2 (en) | 2006-08-30 | 2012-12-04 | Sumitomo Chemical Company, Limited | Organic electroluminescence element |
| JP2012084535A (en) * | 2006-08-30 | 2012-04-26 | Sumitomo Chemical Co Ltd | Organic electroluminescent element |
| JP2008084837A (en) * | 2006-08-30 | 2008-04-10 | Sumitomo Chemical Co Ltd | Organic electroluminescence element |
| JP2008103305A (en) * | 2006-10-17 | 2008-05-01 | Lg Electron Inc | Electroluminescent panel, and light source apparatus including the same |
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| JP2012094348A (en) * | 2010-10-26 | 2012-05-17 | Idemitsu Kosan Co Ltd | Photoelectric conversion device and method for manufacturing the same |
| WO2012057011A1 (en) * | 2010-10-26 | 2012-05-03 | 出光興産株式会社 | Photoelectric conversion device, and process for manufacturing photoelectric conversion device |
| CN107732026A (en) * | 2017-10-16 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | OLED substrate structure |
| WO2019075855A1 (en) * | 2017-10-16 | 2019-04-25 | 深圳市华星光电半导体显示技术有限公司 | Oled substrate structure |
| KR20220006001A (en) | 2020-07-07 | 2022-01-14 | 호도가야 가가쿠 고교 가부시키가이샤 | Organic patterning layer and matal patterning method using the same |
| CN111899648A (en) * | 2020-08-24 | 2020-11-06 | 云谷（固安）科技有限公司 | Display panel and display device |
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