GB2544190B - Semicoductor devices with germanium-rich active layers & doped transition layers - Google Patents

Semicoductor devices with germanium-rich active layers & doped transition layers

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Publication number
GB2544190B
GB2544190B GB1618096.0A GB201618096A GB2544190B GB 2544190 B GB2544190 B GB 2544190B GB 201618096 A GB201618096 A GB 201618096A GB 2544190 B GB2544190 B GB 2544190B
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United Kingdom
Prior art keywords
layers
germanium
doped transition
rich active
semicoductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1618096.0A
Other versions
GB2544190A (en
GB201618096D0 (en
Inventor
Rachmady Willy
H Le Van
Pillarisetty Ravi
S Kachian Jessica
C French Marc
A Budrevich Aaron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/717,282 external-priority patent/US8748940B1/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB201618096D0 publication Critical patent/GB201618096D0/en
Publication of GB2544190A publication Critical patent/GB2544190A/en
Application granted granted Critical
Publication of GB2544190B publication Critical patent/GB2544190B/en
Active legal-status Critical Current
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    • H01L29/772—Field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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US11769836B2 (en) * 2019-05-07 2023-09-26 Intel Corporation Gate-all-around integrated circuit structures having nanowires with tight vertical spacing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010102557A (en) * 1999-03-12 2001-11-15 포만 제프리 엘 High speed ge channel heterostructures for field effect devices
US20100219396A1 (en) * 2007-03-29 2010-09-02 Been-Yih Jin Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
US20110147711A1 (en) * 2009-12-23 2011-06-23 Ravi Pillarisetty Non-planar germanium quantum well devices
KR20120089354A (en) * 2009-12-23 2012-08-09 인텔 코포레이션 Techniques for forming contacts to quantum well transistors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010102557A (en) * 1999-03-12 2001-11-15 포만 제프리 엘 High speed ge channel heterostructures for field effect devices
US20100219396A1 (en) * 2007-03-29 2010-09-02 Been-Yih Jin Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
US20110147711A1 (en) * 2009-12-23 2011-06-23 Ravi Pillarisetty Non-planar germanium quantum well devices
KR20120089354A (en) * 2009-12-23 2012-08-09 인텔 코포레이션 Techniques for forming contacts to quantum well transistors

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