GB1070288A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1070288A GB1070288A GB2477464A GB2477464A GB1070288A GB 1070288 A GB1070288 A GB 1070288A GB 2477464 A GB2477464 A GB 2477464A GB 2477464 A GB2477464 A GB 2477464A GB 1070288 A GB1070288 A GB 1070288A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- intersect
- transistors
- wafer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910001629 magnesium chloride Inorganic materials 0.000 abstract 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
1,070,288. Transistors. RADIO CORPORATION OF AMERICA. June 15, 1964 [July 8, 1963], No. 24774/64. Heading H1K. The invention relates to transistors in which both emitter and collector junctions come to the upper surface of the wafer and are there protected by an insulating film, for example of magnesium fluoride, magnesium chloride, or silicon oxide. Silicon oxide films are conveniently, formed by spraying on to the wafer the thermal decomposition products of a siloxane. Suitable semi-conductors are silicon, germanium, and silicon-germanium alloys. The intersect of one of the two junctions with the surface is covered by a metallic layer lying on the insulating film and forming an extension of a main electrode. A similar extension of another main electrode may cover the intersect of the other junction with the surface. To form the electrodes, holes are formed in the insulating layer and aluminium (for example) is deposited either selectively or overall, in the latter case unwanted metal being removed by grinding, lapping, or etching.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29340663A | 1963-07-08 | 1963-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1070288A true GB1070288A (en) | 1967-06-01 |
Family
ID=23128953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2477464A Expired GB1070288A (en) | 1963-07-08 | 1964-06-15 | Semiconductor devices |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4841074B1 (en) |
| BR (1) | BR6460534D0 (en) |
| DE (1) | DE1489247B1 (en) |
| ES (1) | ES301778A1 (en) |
| GB (1) | GB1070288A (en) |
| NL (1) | NL6407694A (en) |
| SE (1) | SE316530B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50137478A (en) * | 1974-04-18 | 1975-10-31 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE555335A (en) * | 1956-02-28 | |||
| US2890395A (en) * | 1957-10-31 | 1959-06-09 | Jay W Lathrop | Semiconductor construction |
| US2989669A (en) * | 1959-01-27 | 1961-06-20 | Jay W Lathrop | Miniature hermetically sealed semiconductor construction |
| FR1262176A (en) * | 1959-07-30 | 1961-05-26 | Fairchild Semiconductor | Semiconductor and conductor device |
| NL131156C (en) * | 1959-08-11 | |||
| NL274830A (en) * | 1961-04-12 | |||
| FR1316061A (en) * | 1961-04-12 | 1963-01-25 | Fairchild Camera Instr Co | Semiconductor with regulated surface potential |
-
1964
- 1964-06-15 GB GB2477464A patent/GB1070288A/en not_active Expired
- 1964-06-30 BR BR16053464A patent/BR6460534D0/en unknown
- 1964-07-07 SE SE828664A patent/SE316530B/xx unknown
- 1964-07-07 NL NL6407694A patent/NL6407694A/xx unknown
- 1964-07-07 ES ES0301778A patent/ES301778A1/en not_active Expired
- 1964-07-07 DE DE19641489247 patent/DE1489247B1/en active Pending
- 1964-07-07 JP JP3887064A patent/JPS4841074B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4841074B1 (en) | 1973-12-04 |
| SE316530B (en) | 1969-10-27 |
| ES301778A1 (en) | 1965-01-01 |
| BR6460534D0 (en) | 1973-05-15 |
| DE1489247B1 (en) | 1970-07-23 |
| NL6407694A (en) | 1965-01-11 |
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