GB1018903A - A process for use in the production of a semi-conductor device - Google Patents
A process for use in the production of a semi-conductor deviceInfo
- Publication number
- GB1018903A GB1018903A GB4470662A GB4470662A GB1018903A GB 1018903 A GB1018903 A GB 1018903A GB 4470662 A GB4470662 A GB 4470662A GB 4470662 A GB4470662 A GB 4470662A GB 1018903 A GB1018903 A GB 1018903A
- Authority
- GB
- United Kingdom
- Prior art keywords
- recess
- layer
- alloying
- nov
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical class [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 235000011054 acetic acid Nutrition 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 235000011118 potassium hydroxide Nutrition 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 239000011734 sodium Substances 0.000 abstract 1
- 235000011121 sodium hydroxide Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Abstract
1,018,903. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Nov. 26, 1962 [Nov. 25, 1961], No. 44706/62. Heading H1K. A recess is mechanically cut in a semiconductor body to extend through a layer of one conductivity type extending over the entire surface of a body of different conductivity or conductivity type, and then etched. At least 80% by volume of the material to be removed is removed in the mechanical cutting, the etching preferably removing only material damaged in this process. To this end where the body is silicon a specified mixture of nitric and hydrofluoric acids with a modifier chosen from acetic acid and sodium and potassium hydroxides is used. In the embodiment, Fig. 4 (not shown), a PNPN controlled rectifier is formed by cutting an annular recess through an aluminium diffused N-type layer on a high resistivity P- type silicon body using a hollow emery- or diamond-faced cylinder, followed by etching. A circular PN junction and surrounding annular control contact are formed in the circular N layer thus isolated by alloying in gold-boron and gold-antimony foils respectively. Alternatively the alloying may be effected before the recess is formed.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES76830A DE1191493B (en) | 1961-11-25 | 1961-11-25 | Method for producing a semiconductor component with a zone divided into two parts by a recess forming a closed line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1018903A true GB1018903A (en) | 1966-02-02 |
Family
ID=7506395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4470662A Expired GB1018903A (en) | 1961-11-25 | 1962-11-26 | A process for use in the production of a semi-conductor device |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH406437A (en) |
| DE (1) | DE1191493B (en) |
| GB (1) | GB1018903A (en) |
| NL (1) | NL284582A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0279949A1 (en) * | 1987-02-11 | 1988-08-31 | BBC Brown Boveri AG | Process for manufacturing semiconductor components |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE519579A (en) * | 1952-05-01 | |||
| NL210117A (en) * | 1956-08-24 |
-
0
- NL NL284582D patent/NL284582A/xx unknown
-
1961
- 1961-11-25 DE DES76830A patent/DE1191493B/en active Pending
-
1962
- 1962-09-06 CH CH1060862A patent/CH406437A/en unknown
- 1962-11-26 GB GB4470662A patent/GB1018903A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0279949A1 (en) * | 1987-02-11 | 1988-08-31 | BBC Brown Boveri AG | Process for manufacturing semiconductor components |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1191493B (en) | 1965-04-22 |
| CH406437A (en) | 1966-01-31 |
| NL284582A (en) |
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