FR2841382B1 - IMAGER FOR VISIBLE LIGHT - Google Patents

IMAGER FOR VISIBLE LIGHT

Info

Publication number
FR2841382B1
FR2841382B1 FR0207893A FR0207893A FR2841382B1 FR 2841382 B1 FR2841382 B1 FR 2841382B1 FR 0207893 A FR0207893 A FR 0207893A FR 0207893 A FR0207893 A FR 0207893A FR 2841382 B1 FR2841382 B1 FR 2841382B1
Authority
FR
France
Prior art keywords
imager
visible light
visible
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0207893A
Other languages
French (fr)
Other versions
FR2841382A1 (en
Inventor
Cyril Guedj
Norbert Moussy
Yvan Bonnassieux
I Cabarrocas Pere Roca
Svetoslav Tchakarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0207893A priority Critical patent/FR2841382B1/en
Priority to DE60318848T priority patent/DE60318848T2/en
Priority to US10/519,012 priority patent/US7189952B2/en
Priority to AT03760788T priority patent/ATE385043T1/en
Priority to PCT/FR2003/001965 priority patent/WO2004001853A2/en
Priority to EP03760788A priority patent/EP1516368B1/en
Publication of FR2841382A1 publication Critical patent/FR2841382A1/en
Application granted granted Critical
Publication of FR2841382B1 publication Critical patent/FR2841382B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0207893A 2002-06-25 2002-06-25 IMAGER FOR VISIBLE LIGHT Expired - Fee Related FR2841382B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0207893A FR2841382B1 (en) 2002-06-25 2002-06-25 IMAGER FOR VISIBLE LIGHT
DE60318848T DE60318848T2 (en) 2002-06-25 2003-06-25 ILLUSTRATION DEVICE
US10/519,012 US7189952B2 (en) 2002-06-25 2003-06-25 Imager having photosensitive material contains polymorphous silicon
AT03760788T ATE385043T1 (en) 2002-06-25 2003-06-25 IMAGING DEVICE
PCT/FR2003/001965 WO2004001853A2 (en) 2002-06-25 2003-06-25 Imager
EP03760788A EP1516368B1 (en) 2002-06-25 2003-06-25 Imager

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0207893A FR2841382B1 (en) 2002-06-25 2002-06-25 IMAGER FOR VISIBLE LIGHT

Publications (2)

Publication Number Publication Date
FR2841382A1 FR2841382A1 (en) 2003-12-26
FR2841382B1 true FR2841382B1 (en) 2005-01-07

Family

ID=29720048

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0207893A Expired - Fee Related FR2841382B1 (en) 2002-06-25 2002-06-25 IMAGER FOR VISIBLE LIGHT

Country Status (1)

Country Link
FR (1) FR2841382B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1677364A1 (en) * 2004-12-30 2006-07-05 St Microelectronics S.A. Light detector formed on an integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure

Also Published As

Publication number Publication date
FR2841382A1 (en) 2003-12-26

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20160229