FR2393422A1 - Procede pour revetir de silicium un substrat isolant par immersion - Google Patents

Procede pour revetir de silicium un substrat isolant par immersion

Info

Publication number
FR2393422A1
FR2393422A1 FR7816599A FR7816599A FR2393422A1 FR 2393422 A1 FR2393422 A1 FR 2393422A1 FR 7816599 A FR7816599 A FR 7816599A FR 7816599 A FR7816599 A FR 7816599A FR 2393422 A1 FR2393422 A1 FR 2393422A1
Authority
FR
France
Prior art keywords
substrate
silicon
face
immersion
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7816599A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of FR2393422A1 publication Critical patent/FR2393422A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y10T428/24314—Slit or elongated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un procédé pour établir un contact électrique avec une substance déposée sur un substrat isolant par immersion. On met en oeuvre un substrat de céramique comportant des ouvertures étroites d'une face à l'autre face opposée de ce substrat, et on revêt une face dudit substrat de silicium mis en contact à l'état fondu avec ladite face du substrat, au moins en partie carbonisée, pour que le silicium puisse mouiller la surface dans le cas d'un substrat de céramique. Ledit silicium qui s'écoule dans les ouvertures permet d'établir un contact électrique avec la face opposée du substrat. Application à la fabrication des cellules solaires.
FR7816599A 1977-06-03 1978-06-02 Procede pour revetir de silicium un substrat isolant par immersion Withdrawn FR2393422A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/803,010 US4128680A (en) 1977-06-03 1977-06-03 Silicon coated ceramic substrate with improvements for making electrical contact to the interface surface of the silicon

Publications (1)

Publication Number Publication Date
FR2393422A1 true FR2393422A1 (fr) 1978-12-29

Family

ID=25185329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7816599A Withdrawn FR2393422A1 (fr) 1977-06-03 1978-06-02 Procede pour revetir de silicium un substrat isolant par immersion

Country Status (5)

Country Link
US (1) US4128680A (fr)
JP (1) JPS5433686A (fr)
DE (1) DE2823973A1 (fr)
FR (1) FR2393422A1 (fr)
GB (1) GB1604500A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263341A (en) * 1978-12-19 1981-04-21 Western Electric Company, Inc. Processes of making two-sided printed circuit boards, with through-hole connections
US4252861A (en) * 1979-09-28 1981-02-24 Honeywell Inc. Growth technique for silicon-on-ceramic
US4251570A (en) * 1979-11-19 1981-02-17 Honeywell Inc. Cold substrate growth technique for silicon-on-ceramic
US4773945A (en) * 1987-09-14 1988-09-27 Ga Technologies, Inc. Solar cell with low infra-red absorption and method of manufacture
JPH02263780A (ja) * 1989-04-04 1990-10-26 Teruyuki Tsunabuchi 装飾用セラミックス製品の表面処理方法
JPH05145094A (ja) * 1991-11-22 1993-06-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US6017811A (en) * 1993-09-09 2000-01-25 The United States Of America As Represented By The Secretary Of The Navy Method of making improved electrical contact to porous silicon
US7867932B2 (en) * 2007-08-28 2011-01-11 Corning Incorporated Refractory glass ceramics
JP2011513974A (ja) * 2008-02-29 2011-04-28 コーニング インコーポレイテッド 純粋なまたはドープされた半導体材料の非支持型物品の製造方法
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
US8540920B2 (en) * 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
US8480803B2 (en) * 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
DE102012105619A1 (de) * 2012-06-27 2014-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US20140041719A1 (en) * 2012-08-13 2014-02-13 International Business Machines Corporation Manufacture of a Solar Module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187426A (en) * 1962-03-19 1965-06-08 Sperry Rand Corp Method of making printed circuit assemblies
US3903427A (en) * 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell connections
FR2328678A1 (fr) * 1975-10-24 1977-05-20 Honeywell Inc Procede pour revetir des matieres ceramiques d'une couche de silicium et application aux cellules solaires

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576669A (en) * 1968-08-15 1971-04-27 Nasa Method for coating through-holes
US3676179A (en) * 1968-10-03 1972-07-11 Gulf Oil Corp Coated article and method for making same
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US4071878A (en) * 1975-02-18 1978-01-31 N L Industries, Inc. Method for producing capacitors and ceramic body therefore

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187426A (en) * 1962-03-19 1965-06-08 Sperry Rand Corp Method of making printed circuit assemblies
US3903427A (en) * 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell connections
FR2328678A1 (fr) * 1975-10-24 1977-05-20 Honeywell Inc Procede pour revetir des matieres ceramiques d'une couche de silicium et application aux cellules solaires

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/69 *

Also Published As

Publication number Publication date
JPS5433686A (en) 1979-03-12
GB1604500A (en) 1981-12-09
US4128680A (en) 1978-12-05
DE2823973A1 (de) 1978-12-07

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Legal Events

Date Code Title Description
RE Withdrawal of published application