FR2302593A1 - CGLAR CELLS WITH HIGH DEGREE OF ENERGY CONVERSION - using multilayer structure of gallium, indium, arsenic and phosphorus cpds - Google Patents

CGLAR CELLS WITH HIGH DEGREE OF ENERGY CONVERSION - using multilayer structure of gallium, indium, arsenic and phosphorus cpds

Info

Publication number
FR2302593A1
FR2302593A1 FR7605376A FR7605376A FR2302593A1 FR 2302593 A1 FR2302593 A1 FR 2302593A1 FR 7605376 A FR7605376 A FR 7605376A FR 7605376 A FR7605376 A FR 7605376A FR 2302593 A1 FR2302593 A1 FR 2302593A1
Authority
FR
France
Prior art keywords
layer
doped
band gap
give
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7605376A
Other languages
French (fr)
Other versions
FR2302593B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2302593A1 publication Critical patent/FR2302593A1/en
Application granted granted Critical
Publication of FR2302593B1 publication Critical patent/FR2302593B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Photoelectric cell, the novelty being (1) a first epitaxial semiconductor layer (ESL) of a cpd. of elements from Gps. III and V of the periodic system, the lower part of the layer being doped to give one conductivity type (A) and the upper part doped to give opposite conductivity (B) and form a rectifying p-n junction with band gap 0.4-2.3 eV and lattic constant (LC) 5.4-6.1 angstrom; (2) layer (1) is covered by a second ESL (2) of a III-V cpd., doped to give conductivity (B), with the same band gap and LC as layer (1), and forming a hetero-boundary layer with layer (1); (3) a third ESL (3) of a III-V cpd., the lower part doped for conductivity (A) and the upper part doped to give type (B), forming a p-n junction and a band gap of 0.4-2.3 eV but larger than the band gap of layer (1) and forming a second hetero-boundary with layer (2), i.e. an n-p boundary. The lengthy claims include cells with a tunnel boundary layer. An inexpensive, multilayer solar cell with a high degree of energy conversion and suitable for general applications.
FR7605376A 1975-02-27 1976-02-26 CGLAR CELLS WITH HIGH DEGREE OF ENERGY CONVERSION - using multilayer structure of gallium, indium, arsenic and phosphorus cpds Granted FR2302593A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55385075A 1975-02-27 1975-02-27

Publications (2)

Publication Number Publication Date
FR2302593A1 true FR2302593A1 (en) 1976-09-24
FR2302593B1 FR2302593B1 (en) 1982-04-23

Family

ID=24211007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605376A Granted FR2302593A1 (en) 1975-02-27 1976-02-26 CGLAR CELLS WITH HIGH DEGREE OF ENERGY CONVERSION - using multilayer structure of gallium, indium, arsenic and phosphorus cpds

Country Status (4)

Country Link
JP (1) JPS51132793A (en)
DE (1) DE2607005C2 (en)
FR (1) FR2302593A1 (en)
IL (1) IL48996A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379189A1 (en) * 1977-01-26 1978-08-25 Vivier Harry Power source based on atomic resonance - is within electromagnetic environment and uses layers of different atomic mass materials
FR2429496A1 (en) * 1978-06-23 1980-01-18 Rca Corp SOLAR CELL COMPRISING AN INDIUM-GALLIUM PHOSPHIDE LAYER
FR2479569A1 (en) * 1980-03-25 1981-10-02 Us Energy DEVICE FOR CONVERTING ELECTROMAGNETIC RADIATION TO ELECTRIC CURRENT

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1194594B (en) * 1979-04-19 1988-09-22 Rca Corp SOLAR CELLS OF AMORPHOUS SILICON WITH TANDEM JUNCTIONS
DE3208078A1 (en) * 1982-03-03 1983-09-08 Chevron Research Co., 94105 San Francisco, Calif. Photoelectric cell for harnessing solar energy
JPS58154274A (en) * 1982-03-09 1983-09-13 シエブロン・リサ−チ・コンパニ− Multilayer photocell
JPS59172780A (en) * 1983-03-22 1984-09-29 Nippon Telegr & Teleph Corp <Ntt> Monolithic cascade type solar battery
JPS6041269A (en) * 1984-03-16 1985-03-04 Shunpei Yamazaki Semiconductor device
JPS59197177A (en) * 1984-03-16 1984-11-08 Shunpei Yamazaki Semiconductor device
JPH0652799B2 (en) * 1987-08-15 1994-07-06 株式会社半導体エネルギー研究所 Semiconductor device
JPH01307278A (en) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd Solar cell
JP2717583B2 (en) * 1988-11-04 1998-02-18 キヤノン株式会社 Stacked photovoltaic element
JPH02218174A (en) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp Photoelectric converting semiconductor device
JPH0320454U (en) * 1990-06-25 1991-02-28
JP2573086B2 (en) * 1990-08-24 1997-01-16 株式会社 半導体エネルギー研究所 Semiconductor device
JPH07101753B2 (en) * 1992-08-05 1995-11-01 日立電線株式会社 Stacked solar cells
US9331228B2 (en) 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8093492B2 (en) 2008-02-11 2012-01-10 Emcore Solar Power, Inc. Solar cell receiver for concentrated photovoltaic system for III-V semiconductor solar cell
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US9806215B2 (en) 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
JP5528882B2 (en) * 2010-03-30 2014-06-25 旭化成エレクトロニクス株式会社 Infrared sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1276947A (en) * 1959-12-30 1961-11-24 Ibm Manufacturing of multi-junction semiconductor devices
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1129220A (en) * 1955-07-25 1957-01-17 High efficiency photovoltaic cells
US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
FR2182652B2 (en) * 1972-04-19 1979-01-12 Telecommunications Sa

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter
FR1276947A (en) * 1959-12-30 1961-11-24 Ibm Manufacturing of multi-junction semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379189A1 (en) * 1977-01-26 1978-08-25 Vivier Harry Power source based on atomic resonance - is within electromagnetic environment and uses layers of different atomic mass materials
FR2429496A1 (en) * 1978-06-23 1980-01-18 Rca Corp SOLAR CELL COMPRISING AN INDIUM-GALLIUM PHOSPHIDE LAYER
FR2479569A1 (en) * 1980-03-25 1981-10-02 Us Energy DEVICE FOR CONVERTING ELECTROMAGNETIC RADIATION TO ELECTRIC CURRENT

Also Published As

Publication number Publication date
IL48996A (en) 1977-08-31
JPS51132793A (en) 1976-11-18
DE2607005C2 (en) 1986-02-20
IL48996A0 (en) 1976-04-30
FR2302593B1 (en) 1982-04-23
DE2607005A1 (en) 1976-09-09

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