FR2028336B1 - - Google Patents

Info

Publication number
FR2028336B1
FR2028336B1 FR6942837A FR6942837A FR2028336B1 FR 2028336 B1 FR2028336 B1 FR 2028336B1 FR 6942837 A FR6942837 A FR 6942837A FR 6942837 A FR6942837 A FR 6942837A FR 2028336 B1 FR2028336 B1 FR 2028336B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6942837A
Other versions
FR2028336A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2028336A1 publication Critical patent/FR2028336A1/fr
Application granted granted Critical
Publication of FR2028336B1 publication Critical patent/FR2028336B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
FR6942837A 1969-01-15 1969-12-11 Expired FR2028336B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79125469A 1969-01-15 1969-01-15

Publications (2)

Publication Number Publication Date
FR2028336A1 FR2028336A1 (fr) 1970-10-09
FR2028336B1 true FR2028336B1 (fr) 1973-10-19

Family

ID=25153132

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6942837A Expired FR2028336B1 (fr) 1969-01-15 1969-12-11

Country Status (4)

Country Link
US (1) US3577047A (fr)
DE (1) DE2001622A1 (fr)
FR (1) FR2028336B1 (fr)
GB (1) GB1276463A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693003A (en) * 1970-11-19 1972-09-19 Gen Electric Storage target for an electron-beam addressed read, write and erase memory
US3911269A (en) * 1971-03-20 1975-10-07 Philips Corp Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
GB2176935B (en) * 1985-06-21 1988-11-23 Stc Plc Photoconductor
GB2437768A (en) * 2006-05-03 2007-11-07 Seiko Epson Corp Photosensing TFT

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor
FR1522025A (fr) * 1966-05-10 1968-04-19 Siemens Ag Dispositif comportant un composant à semi-conducteurs, photosensible
FR1566558A (fr) * 1968-03-20 1969-05-09

Also Published As

Publication number Publication date
GB1276463A (en) 1972-06-01
FR2028336A1 (fr) 1970-10-09
DE2001622A1 (de) 1970-07-23
US3577047A (en) 1971-05-04

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Legal Events

Date Code Title Description
ST Notification of lapse