FR1397605A - Perfectionnements à la production de matières cristallines - Google Patents

Perfectionnements à la production de matières cristallines

Info

Publication number
FR1397605A
FR1397605A FR974393A FR974393A FR1397605A FR 1397605 A FR1397605 A FR 1397605A FR 974393 A FR974393 A FR 974393A FR 974393 A FR974393 A FR 974393A FR 1397605 A FR1397605 A FR 1397605A
Authority
FR
France
Prior art keywords
production
crystalline materials
crystalline
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR974393A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SECR AVIATION
Original Assignee
SECR AVIATION
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SECR AVIATION filed Critical SECR AVIATION
Application granted granted Critical
Publication of FR1397605A publication Critical patent/FR1397605A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR974393A 1963-05-14 1964-05-13 Perfectionnements à la production de matières cristallines Expired FR1397605A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19029/63A GB1034503A (en) 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material

Publications (1)

Publication Number Publication Date
FR1397605A true FR1397605A (fr) 1965-04-30

Family

ID=10122567

Family Applications (1)

Application Number Title Priority Date Filing Date
FR974393A Expired FR1397605A (fr) 1963-05-14 1964-05-13 Perfectionnements à la production de matières cristallines

Country Status (5)

Country Link
US (1) US3378409A (fr)
DE (1) DE1298085B (fr)
FR (1) FR1397605A (fr)
GB (1) GB1034503A (fr)
NL (1) NL6405390A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095143A (en) * 1964-03-31 1967-12-13 Nat Res Dev Improvements in or relating to the production of single crystal material
US3935058A (en) * 1971-07-15 1976-01-27 Preussag Aktiengesellschaft Zone melting process
SE372753B (fr) * 1972-08-04 1975-01-13 Boliden Ab
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
GB2090465B (en) * 1980-12-29 1985-11-13 Gen Electric Production of p-n junctions by the electromigration method
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
US4534100A (en) * 1982-06-28 1985-08-13 The United States Of America As Represented By The Secretary Of The Air Force Electrical method of making conductive paths in silicon
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4775443A (en) * 1986-02-06 1988-10-04 Bleil Carl E Method and apparatus for zone regrowth of crystal ribbons from bulk material
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
AT189229B (de) * 1954-06-24 1957-03-11 Western Electric Co Verfahren zur Erzeugung zumindest einer in einem Körper fortschreitenden Zwischenfläche von fester und flüssiger Phase
US3046164A (en) * 1955-10-18 1962-07-24 Honeywell Regulator Co Metal purification procedures
DE1074273B (de) * 1956-12-27 1960-01-28 Western Electric Company Incorporated New York N Y (V St A) (V St A) I Verfahren zum Zonenschmelzen elektrisch leitender Korper durch unmittelbares galvanisches Erwarmen
BE562932A (fr) * 1957-01-23
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US2996456A (en) * 1958-09-08 1961-08-15 Transitron Electronic Corp Method of growing silicon carbide crystals
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process

Also Published As

Publication number Publication date
DE1298085B (de) 1969-06-26
NL6405390A (fr) 1964-11-16
US3378409A (en) 1968-04-16
GB1034503A (en) 1966-06-29

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