DE968125C - Process for producing a barrier-free contact with germanium - Google Patents

Process for producing a barrier-free contact with germanium

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Publication number
DE968125C
DE968125C DEL10193A DEL0010193A DE968125C DE 968125 C DE968125 C DE 968125C DE L10193 A DEL10193 A DE L10193A DE L0010193 A DEL0010193 A DE L0010193A DE 968125 C DE968125 C DE 968125C
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Germany
Prior art keywords
germanium
metal
alloy
contact
metal alloy
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Expired
Application number
DEL10193A
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German (de)
Inventor
Dr Rer Nat Hans-Ulrich Harten
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Licentia Patent Verwaltungs GmbH
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Licentia Patent Verwaltungs GmbH
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Priority to DEL10193A priority Critical patent/DE968125C/en
Application granted granted Critical
Publication of DE968125C publication Critical patent/DE968125C/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/32—Arrangements of wings characterised by the manner of movement; Arrangements of movable wings in openings; Features of wings or frames relating solely to the manner of movement of the wing
    • E06B3/50—Arrangements of wings characterised by the manner of movement; Arrangements of movable wings in openings; Features of wings or frames relating solely to the manner of movement of the wing with more than one kind of movement
    • E06B3/5009—Arrangements of wings characterised by the manner of movement; Arrangements of movable wings in openings; Features of wings or frames relating solely to the manner of movement of the wing with more than one kind of movement where the sliding and rotating movements are necessarily performed simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10252—Germanium [Ge]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

(WiGBl. S. 175)(WiGBl. P. 175)

AUSGEGEBEN AM 16. JANUAR 1958ISSUED JANUARY 16, 1958

L 10193 VIIIc/ 21gL 10193 VIIIc / 21g

Bei der Herstellung von elektrischen Kontakten an Germanium entsteht die Schwierigkeit, daß sich zwischen dem Germanium und den meisten elektrisch als Leitungsmaterial in Betracht kommenden Stoffen Sperrschichten ausbilden, die die elektrischen Werte der Kontakte wesentlich mindern. Es sind nun bereits Verfahren bekanntgeworden, um mit Hilfe von Metallen oder Metallegierungen, die zwischen 200 und 5000 C schmelzen, sperrfreie Kontakte herzustellen, indem das Metall oder die Metallegierung in unmittelbarer Berührung mit dem Germanium verschmolzen wird. Da es sich insbesondere bei der Erzeugung von Kontakten an elektrisch unsymmetrisch leitenden Halbleitersystemen durch Löten stets um verhältnismäßig kleine Materialmengen handelt, geht der Lötprozeß im allgemeinen verhältnismäßig schnell vonstatten. Dies führt dazu, daß das beim Löten eintretende Anlösen des Germaniums durch das Lot ungleichmäßig erfolgt, so daß der sperrschichtfreie Kontakt ebenfalls ungleichmäßig wird.When making electrical contacts with germanium, the difficulty arises that barrier layers are formed between the germanium and most of the substances that can be considered electrically as conducting material, which significantly reduce the electrical values of the contacts. There are now already become known method with the aid of metals or metal alloys that melt between 200 and 500 0 C to produce lockless contacts by the metal or the metal alloy is fused in direct contact with the germanium. Since the production of contacts on electrically asymmetrically conductive semiconductor systems by soldering always involves relatively small amounts of material, the soldering process generally proceeds relatively quickly. The result of this is that the dissolving of the germanium which occurs during soldering is unevenly carried out by the solder, so that the contact free from the barrier layer also becomes uneven.

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung eines sperrschichtfreien Kontaktes mit Germanium, bei dem zwischen dem Kontakt und dem Germanium ein zwischen 200 und 5000 C schmelzendes Metall oder eine entsprechende Metalllegierung in unmittelbarer Berührung mit dem Germanium verschmolzen wird, insbesondere als Kontakt für elektrisch unsymmetrisch leitende Halbleitersysteme. Das Verfahren unterscheidet sich von den bisher bekannten erfmdungsgemäß dadurch, daß das Metall oder die Metallegierung imThe invention relates to a method for producing a barrier-free contact with germanium in which a melting point between 200 and 500 0 C metal or a corresponding metal alloy is fused in direct contact with the germanium between the contact and the germanium, in particular as a contact for electrically asymmetrically conductive semiconductor systems. The method differs from the previously known according to the invention in that the metal or the metal alloy in the

709 852/70709 852/70

Vakuum bzw. bei stark vermindertem Druck aufgedampft oder aufgestäubt, daß anschließend das Halbleitersystem einer Wärmebehandlung unterworfen und daß dann der Kontakt mit dem Germanium im Vakuum oder in einer elektrisch und chemisch !unwirksamen Atmosphäre verschmolzen wird.Vacuum or at greatly reduced pressure vaporized or dusted, that then the Semiconductor system subjected to a heat treatment and that then the contact with the germanium fused in a vacuum or in an electrically and chemically inactive atmosphere will.

Durch das Aufdampfen oder Aufstäuben des Metalls oder der Metallverbindung ist es möglich,By evaporating or sputtering the metal or the metal compound, it is possible to

ίο die Menge genau zu dosieren. Dies bringt den weiteren Vorteil mit sich, daß die Lotschicht nicht zu dick wird und den inneren Widerstand des Halbleitersystems nicht unnötig erhöht. Durch die Wärmebehandlung wird erreicht, daß ein Teil des aufgebrachten Materials in das Germanium eindiffundiert und damit die Ausbildung des sperrschichtfreien Kontaktes beim Löten besonders gleichmäßig vor sich geht, weil sie nicht mehr an das kurzzeitige Erhitzen des Germaniums beim Löten gebunden ist. Es entsteht somit ein sperrfreier Übergang, der wesentlich gleichmäßiger ist als bei den bekannten Verfahren und dessen innerer Widerstand wegen der einstellbaren Dicke der Lotschicht sehr klein gehalten werden kann. Die Vornähme des Lötvorganges im Vakuum oder in einer elektrisch und chemisch unwirksamen Atmosphäre hat den Vorteil, daß einerseits die bei den erhöhten Temperaturen vergrößerte Reaktionsfreudigkeit ausgeschaltet und andererseits verhindert wird, daß sich Gasmoleküle oder Atome an der Lötstelle festsetzen und eine Sperrschichtbildung fördern.ίο to dose the amount exactly. This brings the Another advantage with it that the solder layer is not too thick and the internal resistance of the semiconductor system not unnecessarily increased. The heat treatment ensures that part of the applied material diffuses into the germanium and thus the formation of the barrier-free contact during soldering is particularly uniform because it is no longer on the short-term heating of the germanium during soldering is bound. This creates a lock-free Transition that is much more even than with the known processes and its internal Resistance can be kept very small because of the adjustable thickness of the solder layer. The first names the soldering process in a vacuum or in an electrically and chemically inactive atmosphere has the advantage that, on the one hand, the increased reactivity at the elevated temperatures turned off and, on the other hand, prevents gas molecules or atoms from sticking to the solder joint and promote barrier formation.

Mit besonderem Vorteil wird man bei der Ausübung des Verfahrens gemäß der Erfindung Wismut, Blei oder eine Legierung mit diesen Substanzen oder eine Indiumlegierung verwenden.With particular advantage, when practicing the method according to the invention, bismuth, Use lead or an alloy containing these substances or an indium alloy.

Claims (4)

Patentanspruch ErClaim He i. Verfahren zur Herstellung eines sperrschichtfreien Kontaktes mit Germanium, bei dem zwischen dem Kontakt und dem Germanium ein zwischen 200 und 5000 C schmelzendes Metall oder eine entsprechende Metallegierung in unmittelbarer Berührung mit dem Germanium verschmolzen wird, insbesondere als Kontakt für elektrisch unsymmetrisch leitende Halbleitersysteme, dadurch gekennzeichnet, daß das Metall oder die Metallegierung im Vakuum bzw. bei stark vermindertem Druck aufgedampft oder aufgestäubt, daß anschließend das Halbleitersystem einer Wärmebehandlung unterworf en und daß dann der Kontakt mit dem Germanium im Vakuum oder in einer elektrisch und chemisch unwirksamen Atmosphäre verschmolzen wird.i. Method for producing a barrier layer-free contact with germanium, in which between the contact and the germanium a metal that melts between 200 and 500 0 C or a corresponding metal alloy is fused in direct contact with the germanium, in particular as a contact for electrically asymmetrically conductive semiconductor systems, characterized that the metal or the metal alloy is vapor-deposited or sputtered in a vacuum or at greatly reduced pressure, that the semiconductor system is then subjected to a heat treatment and that the contact with the germanium is then fused in a vacuum or in an electrically and chemically inactive atmosphere. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß für die Metallegierung eine Indiumlegierung verwendet wird.2. The method according to claim 1, characterized in that that an indium alloy is used for the metal alloy. 3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß für das Metall oder die Metallegierung Wismut oder eine Wismutlegierung verwendet wird.3. The method according to claim 1, characterized in that that for the metal or the metal alloy bismuth or a bismuth alloy is used. 4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß für das Metall oder die Metallegierung Blei oder eine Bleilegierung verwendet wird.4. The method according to claim 1, characterized in that that lead or a lead alloy is used for the metal or metal alloy will. In Betracht gezogene Druckschriften:Considered publications: Deutsche Patentschrift Nr. 660 822; USA.-Patentschriften Nr. 2530110, 2402662; britische Patentschrift Nr. 551 209; französische Patentschrift Nr. 986 263;German Patent No. 660 822; U.S. Patent Nos. 2530110, 2402662; British Patent No. 551,209; French Patent No. 986,263; Torrey und Whitmer, »Crystal rectifiers«, 1948, S. 304, 305, 309, 316, 368;Torrey and Whitmer, "Crystal rectifiers," 1948, pp. 304, 305, 309, 316, 368; Journal of Applied Physics, Bd. 20, 1949, S. 804 bis 815;Journal of Applied Physics, Vol. 20, 1949, pp. 804-815; Ann. der Physik, Bd. 7, 1930, S. 201; Bd. 15, 1932, S. 407.Ann. der Physik, Vol. 7, 1930, p. 201; Vol. 15, 1932, p. 407.
DEL10193A 1951-09-24 1951-09-24 Process for producing a barrier-free contact with germanium Expired DE968125C (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1106877B (en) * 1958-06-14 1961-05-18 Siemens Ag Process for the production of a highly doped area in semiconductor bodies by alloying foils made of a gold alloy
DE1128047B (en) * 1959-11-30 1962-04-19 Akad Wissenschaften Ddr Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum
DE1152002B (en) * 1961-04-01 1963-07-25 Jewgenij A Kolenko Solder for connecting semiconductor thermocouples to one another and to metals
DE977513C (en) * 1951-12-18 1966-11-03 Standard Elek K Lorenz Ag Method for eliminating a blocking effect from flat contact electrodes on semiconductor bodies made of germanium or silicon

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE660822C (en) * 1932-04-15 1938-06-03 Siemens & Halske Akt Ges Process for the production of largely free metal contacts on electrical semiconductors
GB551209A (en) * 1941-02-04 1943-02-12 Western Electric Co Rectifying contact detector systems for very short electric waves
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
FR986263A (en) * 1948-06-26 1951-07-30 Western Electric Co electrical assembly elements using semiconductor materials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE660822C (en) * 1932-04-15 1938-06-03 Siemens & Halske Akt Ges Process for the production of largely free metal contacts on electrical semiconductors
GB551209A (en) * 1941-02-04 1943-02-12 Western Electric Co Rectifying contact detector systems for very short electric waves
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
FR986263A (en) * 1948-06-26 1951-07-30 Western Electric Co electrical assembly elements using semiconductor materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977513C (en) * 1951-12-18 1966-11-03 Standard Elek K Lorenz Ag Method for eliminating a blocking effect from flat contact electrodes on semiconductor bodies made of germanium or silicon
DE1106877B (en) * 1958-06-14 1961-05-18 Siemens Ag Process for the production of a highly doped area in semiconductor bodies by alloying foils made of a gold alloy
DE1128047B (en) * 1959-11-30 1962-04-19 Akad Wissenschaften Ddr Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum
DE1152002B (en) * 1961-04-01 1963-07-25 Jewgenij A Kolenko Solder for connecting semiconductor thermocouples to one another and to metals

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