DE8908678U1 - Power module - Google Patents
Power moduleInfo
- Publication number
- DE8908678U1 DE8908678U1 DE8908678U DE8908678U DE8908678U1 DE 8908678 U1 DE8908678 U1 DE 8908678U1 DE 8908678 U DE8908678 U DE 8908678U DE 8908678 U DE8908678 U DE 8908678U DE 8908678 U1 DE8908678 U1 DE 8908678U1
- Authority
- DE
- Germany
- Prior art keywords
- power module
- power
- module according
- carrier
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000007750 plasma spraying Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000007751 thermal spraying Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
89 G 1 6 O k DE89 G 1 6 O k DE
Leistungsbaugruppe 5Power module 5
Die Erfindung betrifft eine Leistungsbaugruppe mit einem Leistungsbsuelement und einem Kühlkörper zum Abführen der Verlust -wärme des Leistungsbaueiements.The invention relates to a power module with a power element and a heat sink for dissipating the heat loss of the power module.
1" Eine solche Leistungsbaugruppe nach dem Stand der Technik ist zum Beispiel in der deutschen öffenl&gungsschrift 35 23 06.1 b3« schrieben. Dabei »irrf ein Leirtungshalbieiterchip durch Lötung SLi* einem in Form einer Kupfe' schicht ausgeführten Träger befastigti der seine Verlustwärme auf eine nrößere Fläche verteilen1" Such a power module according to the state of the art is described, for example, in the German publication 35 23 06.1 b3. Here, "a power semiconductor chip is attached by soldering to a carrier in the form of a copper layer, which distributes its waste heat over a larger area. soll (Wärmespreizung). Die Kupferschicirt wiederum ist auf einer Isolierschicht aus Keramik angeordnet; und mit dieser durch eine intermetallische Verbindung verbunden. Der so gebildete Schichtenverband aui. dei Kupfer und der Keramikschicht mit dem aufgelöteten Leistungsha'bleiter ist schließlich über die Keramik-(heat spreading). The copper layer is in turn arranged on an insulating layer made of ceramic and connected to it by an intermetallic compound. The layer combination thus formed from the copper and the ceramic layer with the soldered power semiconductor is finally connected via the ceramic schicht mit einem Wärmeleitkleber auf dem Kühlkörper befestigt.layer is attached to the heat sink with a thermally conductive adhesive.
Die Eigenschaften sowie die Herstellung eines solchen Sohichtenverbandes sind in einer Informationsschrift der Fa. DODUKO g GmbH unter der Bezeichnung DCB Substrat (Direct copper/bonding) 25 beschrieben.The properties and the production of such a substrate bond are described in an information leaflet from DODUKO g GmbH under the name DCB Substrate (Direct copper/bonding) 25.
f.: Die Dicke der Keramikschicht muß dabei größer gewählt werden, f als es für die elektrische Isolierung notwendig wäre, da sonst % die mechanische Festigkeit beim Herstellungsprozeß nicht mehr 30 gegeben wäre. Dadurch ist die erzielbare Wärmeleitfähigkeit begrenzt. Außerdem darf die "^icke des Keramikblättchens möglichst wenig variieren, da sich sonst örtliche Temperaturspitzen ergeben, die die Temperaturwechselbeständigkeit verschlechtern.f. : The thickness of the ceramic layer must be greater than would be necessary for electrical insulation, otherwise the mechanical strength would no longer be present during the manufacturing process. This limits the achievable thermal conductivity. In addition, the thickness of the ceramic sheet must vary as little as possible, otherwise local temperature peaks will occur which will impair the thermal shock resistance.
Die Aufgabe der Erfindung besteht darin, eine Leistungsbaugruppe so auszuführen, daß die Wärmeleitfähigkeit verbessert wird und sich gleichzeitig der Herstellungsprozeß vereinfacht. DieThe object of the invention is to design a power module in such a way that the thermal conductivity is improved and at the same time the manufacturing process is simplified. The
89 6 1 6 O k DE89 6 1 6 O k EN
erfindungsgemäße Lösung ist in Anspruch 1 gekennzeichnet. Vorteilhafte Weiterbildungen der Erfindung finden sich in den Unteransprüchen.The inventive solution is characterized in claim 1. Advantageous further developments of the invention can be found in the subclaims.
Die srfindungsgemäße Lösung besteht darin, die Isolierschicht nicht als vorher gefertigtes Teil auszuführen, sondern als Beschichtung, die ihre endgültige Fax® erst während des Beschichtungsvorgangs erhält. Dadurch kann die Isolierschicht beliebig aunn und mit einer sehr gleichmäßigen Schichtdicke ausgeführt werden. Die geringere Schichtdicke verbessert die Wärmeleitung und durch die sehr gleichmäßige Schichtdicke treten &eine örtlichen Temperaturspitzen auf.The solution according to the invention consists in not making the insulating layer as a previously manufactured part, but as a coating that only receives its final finish during the coating process. This means that the insulating layer can be made as desired and with a very uniform layer thickness. The lower layer thickness improves heat conduction and the very uniform layer thickness prevents local temperature peaks from occurring.
Eine weitere Verbesserung der Wärmeleitung ergibt sich aus der Tatsache, daß bei der Leistungsbaugruppe gemäß der Erfindung weniger Wärmeübergänge vorhanden sind, da die Beschichtung nur einseitig mit einem Wärmeleitkleber verbunden werden muß. Die Beschichtung kann auf dem Kühlkörper aufgetragen sein und mit dem Träger verklebt werden oder auf dem Träger aufgetragen sein und mit dem Kühlkörper verklebt werden.A further improvement in heat conduction results from the fact that in the power module according to the invention there are fewer heat transfers, since the coating only has to be bonded on one side with a thermally conductive adhesive. The coating can be applied to the heat sink and glued to the carrier or applied to the carrier and glued to the heat sink.
Die Beschichtung besteht aus einem Keramikmaterial, das durch ein beliebiges geeignetes Beschichtungsverfahren aufgetragen wird, wie zum Beispiel durch Plasmaspritzen oder durch Sputtern.The coating consists of a ceramic material applied by any suitable coating process, such as plasma spraying or sputtering.
Eine besonders vorteilhafte Anwendung der Erfindung ergibt sich bei Leistungshalbleitern, die bereits in einem Gehäuse untergebracht sind, wobei der Gehäuseboden als Träger dient. DerartigeA particularly advantageous application of the invention is found in power semiconductors that are already housed in a housing, with the housing base serving as a carrier. Anordnungen mußten bisher vom Kühlkörper durch Zwischenlegen einer wärmeleitenden Isolierfolie oder eines wärmeleitenden Isolierblättchens isoliert werden. Die Befestigung erfolgte dabei über eine entsprechend aufwendige mechanische Halterung oder durch Kleben, wobei die Isolierschicht beidseitig verklebtPreviously, arrangements had to be insulated from the heat sink by interposing a heat-conducting insulating film or a heat-conducting insulating sheet. The attachment was carried out using a correspondingly complex mechanical holder or by gluing, with the insulating layer being glued on both sides werden mußte. Im Falle des Klebens ergaben sich dabei insbesondere bei komplizierten Bauformen fertigungstechnische Probleme.In the case of gluing, manufacturing problems arose, particularly with complicated designs.
89 6 1 6 0 H DE { 89 6 1 6 0 H EN {
Die Erfindung wird anhand der Figur näher erläutert.The invention is explained in more detail with reference to the figure.
Die Figur zeigt eine Anordnung von einem oder mehreren Leistungshalbleitern auf einem Kühlkörper 4A, der oder die am Boden eines Gehäuses 5 angebracht sind, wobei dieser Boden als wärmeleitender Träger 2A dient.The figure shows an arrangement of one or more power semiconductors on a heat sink 4A, which is or are attached to the bottom of a housing 5, wherein this bottom serves as a heat-conducting carrier 2A.
Der wärmeleitende Träger 2A ist mit einem Kühlkörper 4A über eine wärmeleitende Klebschicht K und eine Isolierschicht 3A lü verbunden.The thermally conductive carrier 2A is connected to a heat sink 4A via a thermally conductive adhesive layer K and an insulating layer 3A lü.
Die Isolierschicht 3A besteht aus Keramikoxid und ist auf dem Kühlkörper 4A als Beschichtung aufgetragen.The insulating layer 3A consists of ceramic oxide and is applied to the heat sink 4A as a coating.
Bei dieser Anordnung ist die Montage gegenüber den beim Stand der Technik üblichen Verfahren vereinfacht. Das bisher verwendete Isolierblättchen mußte auf zwei Seiten verklebt werden, wohingegen bei dem erfindungsgemäßen Verfahren nur eine Klebschicht notwendig ist.With this arrangement, assembly is simplified compared to the usual prior art methods. The insulating sheet used previously had to be glued on two sides, whereas with the method according to the invention only one adhesive layer is necessary.
Claims (1)
K &eegr; sayings
K
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE8908678U DE8908678U1 (en) | 1989-07-17 | 1989-07-17 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE8908678U DE8908678U1 (en) | 1989-07-17 | 1989-07-17 | Power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE8908678U1 true DE8908678U1 (en) | 1990-11-15 |
Family
ID=6841146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8908678U Expired - Lifetime DE8908678U1 (en) | 1989-07-17 | 1989-07-17 | Power module |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE8908678U1 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4118398A1 (en) * | 1991-06-05 | 1992-12-10 | Ant Nachrichtentech | Electronic assembly with circuit board in metallic housing e.g. for satellite - cools by conduction into metallic core without insulation under chip and against heat sink |
| DE4237763A1 (en) * | 1992-11-09 | 1994-05-11 | Siemens Ag | Device for the isolated fastening of heat-generating semiconductor components |
| DE29818497U1 (en) | 1998-10-16 | 1999-02-04 | Rational GmbH, 86899 Landsberg | Cooling plate with at least one integrated electronic component |
| DE19904279A1 (en) * | 1999-02-03 | 2000-08-17 | Sew Eurodrive Gmbh & Co | Semiconductor component, especially for an electric motor frequency converter, has an electrically non-conductive housing directly surrounding cooling bodies of a non-insulated power semiconductor housing |
| DE4330975C2 (en) * | 1993-09-13 | 2001-10-25 | Bosch Gmbh Robert | Method for applying a power component to a printed circuit board |
| DE10041829A1 (en) * | 2000-08-25 | 2002-03-21 | Nft Nanofiltertechnik Gmbh | Cooling device used in microprocessors comprises a substrate having a thermal conducting surface that forms a thermal contact with the object to be cooled and a thermal dissipating surface |
| DE10061143A1 (en) * | 2000-12-08 | 2002-06-13 | Abb Research Ltd | Device for simultaneous cooling of several distributed components has cooling air feed arrangement as pipeline or channel system with air feed channel(s) and if appropriate branches |
| DE10118384A1 (en) * | 2001-04-12 | 2002-10-24 | Siemens Ag | Arrangement for cooling a power semiconductor element |
| DE10142614A1 (en) * | 2001-08-31 | 2003-04-03 | Siemens Ag | Power electronics unit |
| US7044212B1 (en) | 2000-08-25 | 2006-05-16 | Net Nanofiltertechnik Gmbh | Refrigeration device and a method for producing the same |
| DE102004055534A1 (en) * | 2004-11-17 | 2006-05-24 | Danfoss Silicon Power Gmbh | Power semiconductor module, has wiring layer internally connected with sprayed layer, coated on insulating layer and formed by spraying particle on particle area of heat-sink in stream of hot gas |
| DE102009014794B3 (en) * | 2009-03-28 | 2010-11-11 | Danfoss Silicon Power Gmbh | Method for producing a solid power module suitable for high voltage applications and power module produced therewith |
| DE102011004171A1 (en) * | 2011-02-15 | 2012-08-16 | Brose Fahrzeugteile GmbH & Co. Kommanditgesellschaft, Würzburg | Temperierelement and method for fixing an electrical component to the tempering |
| EP2690656A1 (en) * | 2012-01-11 | 2014-01-29 | Huawei Technologies Co., Ltd | Power device insulating heat radiation structure, circuit board and power supply equipment |
-
1989
- 1989-07-17 DE DE8908678U patent/DE8908678U1/en not_active Expired - Lifetime
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4118398A1 (en) * | 1991-06-05 | 1992-12-10 | Ant Nachrichtentech | Electronic assembly with circuit board in metallic housing e.g. for satellite - cools by conduction into metallic core without insulation under chip and against heat sink |
| DE4237763A1 (en) * | 1992-11-09 | 1994-05-11 | Siemens Ag | Device for the isolated fastening of heat-generating semiconductor components |
| DE4330975C2 (en) * | 1993-09-13 | 2001-10-25 | Bosch Gmbh Robert | Method for applying a power component to a printed circuit board |
| DE29818497U1 (en) | 1998-10-16 | 1999-02-04 | Rational GmbH, 86899 Landsberg | Cooling plate with at least one integrated electronic component |
| DE19904279B4 (en) * | 1999-02-03 | 2005-09-01 | Sew-Eurodrive Gmbh & Co. Kg | Semiconductor device |
| DE19904279A1 (en) * | 1999-02-03 | 2000-08-17 | Sew Eurodrive Gmbh & Co | Semiconductor component, especially for an electric motor frequency converter, has an electrically non-conductive housing directly surrounding cooling bodies of a non-insulated power semiconductor housing |
| DE10041829A1 (en) * | 2000-08-25 | 2002-03-21 | Nft Nanofiltertechnik Gmbh | Cooling device used in microprocessors comprises a substrate having a thermal conducting surface that forms a thermal contact with the object to be cooled and a thermal dissipating surface |
| US7044212B1 (en) | 2000-08-25 | 2006-05-16 | Net Nanofiltertechnik Gmbh | Refrigeration device and a method for producing the same |
| DE10041829B4 (en) * | 2000-08-25 | 2004-11-04 | N F T Nanofiltertechnik Gmbh | cooler |
| DE10061143A1 (en) * | 2000-12-08 | 2002-06-13 | Abb Research Ltd | Device for simultaneous cooling of several distributed components has cooling air feed arrangement as pipeline or channel system with air feed channel(s) and if appropriate branches |
| DE10118384A1 (en) * | 2001-04-12 | 2002-10-24 | Siemens Ag | Arrangement for cooling a power semiconductor element |
| US6846987B2 (en) | 2001-08-31 | 2005-01-25 | Siemens Aktiengesellschaft | Power electronics component |
| DE10142614A1 (en) * | 2001-08-31 | 2003-04-03 | Siemens Ag | Power electronics unit |
| DE102004055534A1 (en) * | 2004-11-17 | 2006-05-24 | Danfoss Silicon Power Gmbh | Power semiconductor module, has wiring layer internally connected with sprayed layer, coated on insulating layer and formed by spraying particle on particle area of heat-sink in stream of hot gas |
| DE102004055534B4 (en) * | 2004-11-17 | 2017-10-05 | Danfoss Silicon Power Gmbh | Power semiconductor module with an electrically insulating and thermally highly conductive layer |
| DE102009014794B3 (en) * | 2009-03-28 | 2010-11-11 | Danfoss Silicon Power Gmbh | Method for producing a solid power module suitable for high voltage applications and power module produced therewith |
| US8017446B2 (en) | 2009-03-28 | 2011-09-13 | Danfoss Silicon Power Gmbh | Method for manufacturing a rigid power module suited for high-voltage applications |
| DE102011004171A1 (en) * | 2011-02-15 | 2012-08-16 | Brose Fahrzeugteile GmbH & Co. Kommanditgesellschaft, Würzburg | Temperierelement and method for fixing an electrical component to the tempering |
| EP2690656A1 (en) * | 2012-01-11 | 2014-01-29 | Huawei Technologies Co., Ltd | Power device insulating heat radiation structure, circuit board and power supply equipment |
| EP2690656A4 (en) * | 2012-01-11 | 2015-08-12 | Huawei Tech Co Ltd | Power device insulating heat radiation structure, circuit board and power supply equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69615038T2 (en) | METHOD FOR SURFACE MOUNTING A HEAT SINK ON A CIRCUIT BOARD | |
| DE2840514C2 (en) | ||
| DE102006028675B4 (en) | Cooling arrangement for arranged on a support plate electrical components | |
| DE10013255B4 (en) | Resin encapsulated electronic device for use in internal combustion engines | |
| DE4017697C2 (en) | Electronic component, process for its production and use | |
| DE102005039478B4 (en) | Power semiconductor device with semiconductor chip stack and method for producing the same | |
| DE102006015447B4 (en) | Power semiconductor component with a power semiconductor chip and method for producing the same | |
| DE10033977A1 (en) | Intermediate coupling structure for mounting semiconductor chip on printed circuit board has conductor paths between contact pads and bonding pads on opposite sides of dielectric body | |
| DE3009295A1 (en) | SEMICONDUCTOR BLOCK | |
| DE8908678U1 (en) | Power module | |
| DE102005049687B4 (en) | Power semiconductor component in flat conductor technology with vertical current path and method for the production | |
| DE19509441C2 (en) | Integrated hybrid power switching device | |
| EP0292848B1 (en) | Semiconductor power module and method of manufacturing it | |
| WO2002058142A2 (en) | Power module | |
| EP2170026B1 (en) | Metal ceramic substrate for electric components or modules, method for producing such a substrate and module with such a substrate | |
| DE8914493U1 (en) | Power module | |
| DE10124141B4 (en) | Connecting device for an electronic circuit arrangement and circuit arrangement | |
| DE102011076774A1 (en) | Semiconductor component for use in e.g. power electronic area, has solderable layers formed at surfaces of carrier and cooling body, respectively, where surfaces of carrier and body face body and carrier, respectively | |
| DE10157362A1 (en) | Power module and process for its manufacture | |
| DE10103084B4 (en) | Semiconductor module and method for its production | |
| EP2067390B1 (en) | Method for producing an arrangement of optoelectronic components, and arrangement of optoelectronic components | |
| DE10260851B4 (en) | Method for manufacturing a cooling device for power devices, cooling device and electronic control device | |
| DE10042839B4 (en) | Electronic component with heat sink and method for its production | |
| EP1421618B1 (en) | Power electronics component | |
| EP1129048A1 (en) | Composite plate and method for producing and using such a composite plate |