DE3429282A1 - Optoelectronic module - Google Patents
Optoelectronic moduleInfo
- Publication number
- DE3429282A1 DE3429282A1 DE19843429282 DE3429282A DE3429282A1 DE 3429282 A1 DE3429282 A1 DE 3429282A1 DE 19843429282 DE19843429282 DE 19843429282 DE 3429282 A DE3429282 A DE 3429282A DE 3429282 A1 DE3429282 A1 DE 3429282A1
- Authority
- DE
- Germany
- Prior art keywords
- housing
- component
- chip carrier
- welding
- preamplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 6
- 238000003466 welding Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
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- 238000003825 pressing Methods 0.000 description 2
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- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
- G02B6/4226—Positioning means for moving the elements into alignment, e.g. alignment screws, deformation of the mount
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
- G02B6/4227—Active alignment methods, e.g. procedures and algorithms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
OBtoelektronisches ModulOBtoelectronic module
Die Erfindung betrifft eine Verbesserung des speziellen optdelektronischen Moduls, das im Oberbegriff des Patentanspruches 1 angegeben ist und das für sich dem Fachmann bestens vertraut ist.The invention relates to an improvement in the special optoelectronic Module that is specified in the preamble of claim 1 and that for itself is very familiar to the specialist.
Die Erfindung stellt insbesondere eine Verbesserung der in den nicht vorveröffentlichten Patentanmeldungen P 34 06 424.9 (VPA 84 P 1141 DE) und P 34 09 146.7 (VPA 84 P 1204 DE) dar. Die Erfindung steht außerdem in engen Zusammenhang mit den prioritätsgleichen Anmeldungen .... (84 P Die Befestigigung des Bauelements im Modul wird durch die im Patentanspruch 1 angegebenen Maßnahmen verbessert. Die Erfindung und ihre Weiterbildungen werden anhand der in den Figuren gezeigten verschiedenen Ausführungsbeispiele bzw. Ansichten im Detail näher erläutert, wobei die Figur 1 einen Schnitt durch ein Gehäusebeispiel, Figur 2 einen Schnitt durch die Platte mit Bauelement, Figur 3 ein insbesondere zur Figur 2 gehörendes Schaltungsschema, Figur 4 eine Ansicht derJenigen Seite der in Figur 2 gezeigten Platte, welche der Linse abgewandt ist, Figur 5 eine Ansicht derjenigen Seite der in Figur 2 gezeigten Platte, welche der Linse zugewandt ist, Figur 6 eine Darstellung, wie eine Befestigung durch Schweißen, z.B. Punktschweißen, am Justierring möglich ist, Figur 7 vergrößerte Ansichten der Schweißstellen, Figur 8 einen Querschnitt durch ein anderes Ausführungsbeispiel des Gehäuses insbesondere für einen Lichtsender und Figur 9 eine Darstellung, wie durch Punktschweißen eine besonders gut Wärme leitende Befestigung am Justierring möglich ist.In particular, the invention represents an improvement of the patent applications P 34 06 424.9 (VPA 84 P 1141 DE) and P 34 09 146.7 (VPA 84 P 1204 DE), which were not previously published. The invention is also closely related to the applications with the same priority. .. (84 p The fastening of the component in the module is improved by the measures specified in claim 1. The invention and its developments are explained in more detail using the various exemplary embodiments or views shown in the figures, with FIG. 1 being a section through an example of a housing, FIG. 2 being a section through the plate with component, FIG Circuit diagram, FIG. 4 a view of the side of the plate shown in FIG. 2 which faces away from the lens, FIG. 5 a view of that side of the plate shown in FIG. 2 which faces the lens, FIG. 6 an illustration of how a fastening by welding , e.g. spot welding is possible on the adjusting ring, Figure 7 enlarged views of the welding points, Figure 8 a cross section through another embodiment of the housing especially for a light transmitter and Figure 9 a representation of how a particularly good heat-conductive attachment to the adjusting ring is possible by spot welding.
Das Bauelement und der Chip-Träger/Platte sind bei dem in Figur 1 gezeigten Beispiel nicht auf der Bodenplatte direkt befestigt, sondern mit Abstand zur Bodenplatte. Dadurch ist eine elektrische Trennung des Potentials der Bodenplatte vom Potential des Bauelements/ Chip-Trägers möglich.The component and the chip carrier / plate are in the one shown in FIG The example shown is not attached directly to the base plate, but at a distance to the base plate. This creates an electrical separation of the potential of the base plate possible from the potential of the component / chip carrier.
Das Bauelement, vergl. PIN-Fotodiodelist rückseitenbeleuchtet, vgl. Figur 1 und 2, insbesondere damit die Eingangskapazität der Vorverstärkerstufe VVI, vgl.The component, see. PIN photodiode is back-lit, see. Figures 1 and 2, in particular the input capacitance of the preamplifier stage VVI, see.
Figur 4, minimal bleibt - bei dem in Figur 4 gezeigten Ausführungsbeispiel ist dieser Vorverstärker vvl neben der Diode angebracht, also nicht wie in der Anmeldung P 34 09 146.7; der Vorverstärker VVI zusammen mit dem Bauelement PIN-Pd (PIN-Fotodiode) kann jedoch auch im Prinzip wie in der Anmeldung P 34 09 146.7 eine einzige Baueinheit bilden. Durch die Verringerung der Eingangskapazität der Vorverstärkerstufe VVI und durch die bei der Erfindung besonders kurz machbaren Hochfrequenzleitungen zum Bauelement kann die Bitrate (MBit/sec) besonders hoch gemacht werden. Günstig ist, die Pin-Fotodiode SO anzubringen und so aufzubauen, daß die Eingangskapazität, welche am Vorverstärker wirkt, möglichst kleiner als ca. 0,5 pF ist. Die Xin-Fotodiode hat selbst eine Kapazität zwischen ihrem p-n-Ubergang und Kontakt-Pad von ca. 0,3 pF, wenn keine weiteren potentialbehafteten Flächen auf der Anodenseite sind. Durch solche Dimensionierungen lassen sich Bitraten von deutlich über 50 MBit/sec erreichen.FIG. 4, remains minimal - in the exemplary embodiment shown in FIG this preamplifier vvl is attached next to the diode, so not like in the registration P 34 09 146.7; the preamplifier VVI together with the component PIN-Pd (PIN photodiode) however, in principle, as in application P 34 09 146.7, a single structural unit can also be used form. By reducing the input capacitance of the preamplifier stage VVI and by the high-frequency lines that can be made particularly short in the invention Component, the bit rate (Mbit / sec) can be made particularly high. Is favorable the pin photodiode To be attached and constructed in such a way that the input capacitance, which acts on the preamplifier is, if possible, less than approx. 0.5 pF. The Xin photodiode itself has a capacitance between its p-n junction and contact pad of approx. 0.3 pF, if there are no other potential-bearing surfaces on the anode side. By Such dimensions can be achieved with bit rates of well over 50 Mbit / sec.
Die Pin-Fotodiode sitzt auf der ~Rückseite" einer Bohrung im Chip-Träger bei den in den Figuren 1, 2, 4 und 5 gezeigten Beispielen, besonders um Abschattungseffekte zu vermeiden; - statt der dort gezeigten gestaf9elten/gestuften Bohrung kann auch eine konische Bohrung dort angebracht sein. Wie in Figur 2 gezeigt ist, kann der Strahlungskegel z.B. einen Winkel von ca. 30 Grad bei Linsen mit üblicher Brechzahl (ca. 1,5) aufweisen. Zur Erzeugung derartiger Bohrungen kann man im Prinzip auch Laserstrahlen, Ultraschall oder Diamantbohrer verwenden, wobei insbesondere auf mdglichst gut definierte Konuswinkel geachtet werden soll und schiefe Bohrungsachsen sowie scharfe Kanten am Übergang zur Plattenoberfläche möglichst vermieden werden sollen. Die Bohrung soll also möglichst so gestaltet sein, daß sie erlaubt, die optische Kopplung zwischen der Glasfaser und dem Fenster der Pin-Fotodiode zu optimieren , insbesondere entsprechend zu justieren.The pin photodiode sits on the ~ backside "of a hole in the chip carrier in the examples shown in FIGS. 1, 2, 4 and 5, especially about shadowing effects to avoid; - instead of the staggered / stepped bore shown there, you can also a conical hole to be attached there. As shown in Figure 2, the Radiation cone e.g. an angle of approx. 30 degrees for lenses with the usual refractive index (approx. 1.5). In principle, it is also possible to produce such bores Use laser beams, ultrasound or diamond burs, with particular reference to As well as possible well-defined cone angles and inclined bore axes should be observed as well as sharp edges at the transition to the board surface should be avoided as far as possible should. The hole should therefore be designed as possible so that it allows the optimize the optical coupling between the glass fiber and the window of the pin photodiode , in particular to adjust accordingly.
Der Chip-Träger wird bevorzugt aus ~grüner Keramik" gefertigt, z.B. gestanzt, bedruckt mit Dickschichtpasten, zusammengesetzt aus zwei Schichten ß z.B.The chip carrier is preferably made of "green ceramic", e.g. punched, printed with thick film pastes, composed of two layers ß e.g.
200#>icke, sowie im Durchlaufverfahren gesintert.200 #> icke, as well as sintered in a continuous process.
Ein solches Verfahren erlaubt, ebenso wie mittels Preßtechnik Jeweils definierte konische oder abgestufte Bohrungen zu erzielen. Hierzu braucht das Laserstrahlbohren, Ultraschallbohren oder Diamantbohren demnach nicht unbedingt angewandt zu werden, was hinsichtlich Preis bzw. Aufwand günstig ist.Such a method allows, as well as by means of pressing technology in each case to achieve defined conical or stepped bores. To do this, laser beam drilling needs Ultrasonic drilling or diamond drilling therefore not necessarily be used, which is cheap in terms of price and effort.
Der Chip-Träger kann jedoch im Prinzip auch durch Preßtechniken gefertigt werden, was besonders bei sehr hohen Stückzahlen wirtschaftlich ist.In principle, however, the chip carrier can also be manufactured by pressing techniques which is particularly economical for very large quantities.
Die Trennebene zwischen beiden Schichten des Chip-Trägers, vergl. Fig. 2 und 1, kann zusätzlich eine elektrische Abschirmung/Metallebene enthalten, sogar als Elektrode eines Kondensators ausgebildet sein. Dies kann vorteilhafterweise genutzt werden, um mindestens einen noch weiteren Kondensator oder mehrere noch weitere Kondensatoren neben den in den Figuren 2, 4 und 5 gezeigten beiden Kondensatoren Chip-C mit deren#Gehäuse 805 oder 504 (kleinere Ausführung) und mit deren Anschlüssen CB, CK (Figur 4) anbringen zu können. Auf der Vorderseite und auf der Rückseite des Chip-Trägers ist nämlich kaum noch Platz für weitere Eondensatoren. Bei einigen 2 der metallisierten Fläche im Abstand uDn 0,2 mm ergibt sich eine Kapazität von ca. 2-3 pF, welche hochfrequenztechnisch nützlich sein kann.The parting plane between the two layers of the chip carrier, cf. Fig. 2 and 1, can additionally contain an electrical shield / metal layer, can even be designed as an electrode of a capacitor. This can be beneficial be used to at least one more capacitor or more further capacitors in addition to the two capacitors shown in FIGS. 2, 4 and 5 Chip-C with their # housing 805 or 504 (smaller version) and their connections CB, CK (Figure 4) to be able to attach. On the front and on the back on the chip carrier there is hardly any space left for additional capacitors. With some 2 of the metallized surface at a distance of 0.2 mm results in a capacitance of approx. 2-3 pF, which can be useful in terms of high frequency technology.
Sowohl die Vorderseite als auch die Rückseite des Chip-Trägers können also zusätzliche elektronische Bauelemente und Leiterstrukturen tragen, vergl.Both the front and the back of the chip carrier can So carry additional electronic components and conductor structures, cf.
die genannten Kondensatoren, was insbesondere bei der Verwendung der ~grünen Keramik" leicht möglich ist.the capacitors mentioned, which is particularly important when using the ~ green ceramic "easily possible is.
Auf der Rückseite des Chip-Trägers sind außerdem die Befestigungspunkte der in der Bodenplatte eingeglasten Pins als Sacklöcher ausgebildet, vgl.The fastening points are also on the back of the chip carrier the pins glazed in the base plate are designed as blind holes, cf.
Figur 1, 2 und 4, um gute Kontaktierungen mit Lot oder Silberleitkleber sowie eine ausreichende mechanische Festigkeit sicherzustellen. Ein einfaches Aufsetzen des Chip-Trägers auf die Stirnflächen der Pins ergäbe zwar bereits sichere Kontakte, aber oft zu. geringe mechanische Festigkeiten der Verbindungen (Schwingungsprüfung, mechanische Schockprüfungen bis 1000g). Durch die Anwendung von Sacklöchern wird auch die Ebenheit der Stirnfläche/ Oberseite und die Lagegenauigkeit der Stirnflächen mit einfachen Mitteln mit ausreichender Toleranz erreicht, wobei sowohl an der Stirnfläche als auch an der Mantelfläche der Pins kontaktiert und gehalten werden kann.Figure 1, 2 and 4, for good contacts with solder or conductive silver adhesive and to ensure sufficient mechanical strength. Easy to put on of the chip carrier on the end faces of the pins would already result in secure contacts, but often too. low mechanical strength of the connections (vibration test, mechanical shock tests up to 1000g). By using blind holes also the flatness of the face / top and the positional accuracy of the face achieved with simple means with sufficient tolerance, both on the face and can be contacted and held on the surface of the pins.
Auf dem Chip-Träger kann auch zusätzlich z.B. ein FET angebracht werden, abweichend vom Stromlaufbeispiel gemäß Figur 3. Die IC-Technik und das Konzept des Vorverstärkers W1 kann also dem jewelligen Bedarf angepaßt werden.An FET, for example, can also be attached to the chip carrier, deviating from the circuit example according to Figure 3. The IC technology and the concept of the The preamplifier W1 can therefore be adapted to meet your needs.
Die Pin-Fotodiode ist nach erfolgter Montage des Chip-Trägers auf die Pins der Bodenplatte mechanisch nicht mehr zugänglich und damit gut geschützt, wenn man von der gestuften/konischen Bohrung absieht. Die Pin-Fotodiode ist also gegen mechanische und umweltchemische Einflüsse gut geschützt.The pin photodiode is on after the assembly of the chip carrier the pins of the base plate are no longer mechanically accessible and are therefore well protected, if you disregard the stepped / conical bore. So the pin photodiode is Well protected against mechanical and environmental chemical influences.
Die Pin-Fotodiode ist jedoch elektrisch, z.B.However, the pin photodiode is electrical, e.g.
zu Prüfzwecken oder für Schadensanalysen (zumindest über einen Pol direkt) zugänglich, vergl. auch Figur 3. Dies ist wichtig für "burn-in", für Halterungsprüfungen und für Qualifikationen, wobei die Prüfung jeweils auch unabhängig von der Funktion des Vorverstärkers durchgeführt werden kann.for test purposes or for damage analyzes (at least via one pole directly) accessible, see also Figure 3. This is important for "burn-in", for mounting tests and for qualifications, whereby the examination is also independent of the function of the preamplifier.
Bei der Montage des Gehäuses kann zum Fixieren auch das Laserpunktschweißen angewandt werden.When assembling the housing, laser spot welding can also be used for fixing can be applied.
Die so verbundenen Teile sind, falls diese selbst leitend sind, dann galvanisch miteinander sicher verbunden, wodurch die Abschirmwirkung gegen Hochfrequenzstörungen verbessert bzw. sichergestellt ist, vergl. insbesondere FIG 1 mit FIG 6, 7, 8 und 9, welche das Punktschweißen zwischen dem Justierring und der Bodenplatte im Detail erläutern; -der Justierring und die Bodenplatte ist für sich beispielhaft sehr detailliert in der bereits genannten Anmeldung P 34 06 424.9 (84 P 1141) erläutert.The parts connected in this way are, if they are themselves conductive, then galvanically securely connected to each other, which provides a shielding effect against high-frequency interference is improved or ensured, cf. in particular FIG. 1 with FIG. 6, 7, 8 and 9 showing the spot welding between the adjustment ring and the bottom plate in detail explain; -the adjustment ring and the base plate is very detailed as an example explained in the aforementioned application P 34 06 424.9 (84 P 1141).
Das Fixieren/Befestigen alleine z.B. durch Kleben würde die Abschirmwirkung nicht ausreichend garantieren. Die Abschirmwirkung ist jedoch im allgemeinen erforderlich sowohl gegen die äußere Umgebung außerhalb des Modulgehäuses (der Eingang des Vorverstärkers W1 mit sehr hohem Eingangswiderstand würde eine gute Empfangsantenne und Sendeantenne für Störimpulse aus der Umwelt/in die Umwelt des Moduls darstellen), als auch gegen die au den Vorverstärker vorgeschalteten/nachgeschalteten Stufen/Bauelemente innerhalb desselben Gehäuses (vgl. die prioritätsgleiche Anmeldung P... Fixing / fastening alone, for example by gluing, would not sufficiently guarantee the shielding effect. The shielding effect is, however, generally required both against the external environment outside the module housing (the input of the preamplifier W1 with a very high input resistance would represent a good receiving antenna and transmitting antenna for interference pulses from the environment / into the environment of the module), as well as against the au the preamplifier upstream / downstream stages / components within the same housing (see the priority registration P ...
und die An#n.P34 06 424.9), wobei solche zusätzlichen Bauteile im allgemeinen rein digital mit extrem steilen Stromimpulsflanken arbeiten. Das Punktschweißen bzw. Laserschweißen kann daher den zusätzlichen Aufwand von Schirmblechen zwischen den einzelnen Stufen innerhalb desselben Gehäuses ersparen, Speziell dann, wenn das Bauelement keine Empfangs-Fotodiode sondern eine Lichtsendediode, z.B. IRED ist, dann sind oft besonders hohe Verlustwärmemengen nach außen an Kühlmedien abzuführen (vgl. z.B. die prioritätsgleiche Anmeldung P....../84P P 8 onacz.B.and An # n.P34 06 424.9), such additional components in generally work purely digitally with extremely steep current pulse edges. The spot welding or laser welding can therefore eliminate the additional expense of shield plates between save the individual stages within the same housing, especially if the component is not a receiving photodiode but a light transmitting diode, e.g. IRED is, then often particularly high amounts of heat loss have to be dissipated to the outside in cooling media (see e.g. the registration with the same priority P ...... / 84P P 8 onac e.g.
200 mW Verlustleistung mittels besonders geringer Wärmewiderstände zwischen Bauelement und Gehäuses oberfläche abzuleiten sind). Die Lebensdauer insbesondere{Bechtsendedioden (IRED) ist um so kürzer, je höher ihre Sperrschichttemperatur :n Betrieb ist, so daß eine gute Kühlung die Lebensdauer verlängert.200 mW power loss due to particularly low thermal resistance between the component and the housing surface). The service life in particular {Bechtsendioden (IRED) is shorter, the higher its junction temperature: n operation, so that good cooling extends the service life.
Das Schweißen, insbesondere Punktschweißen, mittels Laser kann berührungslos z.B. gemäß FIG 6 durchgeführt werden. Dabei kann das gegenseitige Justieren der zu verschweißenden Teile vorher erfolgen -die anschließende berührungslose Verschweißung mit Laser beeinflußt dann nachträglich die Justierung nur noch wenig.The laser welding, in particular spot welding, can be contactless be carried out e.g. in accordance with FIG. The mutual adjustment of the Parts to be welded take place beforehand - the subsequent contactless welding using a laser then has little effect on the adjustment afterwards.
Die Anzahl der auf dem Umfang verteilten Schweißpunkte kann nahezu beliebig gewählt werden. Aus Bild 9 ist erkennbar, daß z.B. 12, 16 oder 20 Schweißpunkte rundum gewählt werden können, wobei ein gewisses Optimum der Wärmeableitung dann erreicht ist, wenn sich die Schweißpunkte gegenseitig überlappen (z.B. 20 Schweißpunkte).The number of spot welds distributed on the circumference can be almost can be chosen at will. the end Figure 9 shows that e.g. 12, 16 or 20 welding points can be selected all around, with a certain optimum heat dissipation is achieved when the welding points overlap each other (e.g. 20 spot welds).
Je höher die Anzahl der Schweißpunkte ist, um so geringer ist der Wärmewiderstand am verschweißten Übergang. Die Schweißnaht, insbesondere die Punktschweiß-Punkte, werden dabei bevorzugt zwischen den Glasisolierungen der Pins angebracht, vgl.The higher the number of welding points, the lower the number Thermal resistance at the welded transition. The weld seam, especially the spot weld points, are preferably attached between the glass insulation of the pins, cf.
FIG 9. Zur Schonung der Glasisolierungen werden also in der Nähe der Glasisolierungen keine Verschweißungen mehr durchgeführt, vgl. FIG 9; - im übrigen sind die Glasisolierungen für sich stark wärmeisolierend, nicht nur galvanisch isolierend, wodurch der Wärmefluß nicht über die Glasperlen fließt, sondern zwischen den Glasperlen hindurch weiter über die Verschweißungen zum Justierring hin. Dieser Wärmefluß ist weitgehend beeinflußt durch den Werkstoff und durch die Dicke der Bodenplatte.FIG 9. To protect the glass insulation are therefore in the vicinity of Glass insulation no more welds carried out, see FIG. 9; - Furthermore are the glass insulations themselves highly heat-insulating, not just galvanically insulating, whereby the heat flow does not flow over the glass beads, but between the glass beads continue through the welds to the adjusting ring. This heat flux is largely influenced by the material and the thickness of the base plate.
Bei dem in Bild 6 gezeigten Beispiel ist der Justierarm für die z-Achse gleichzeitig zur #uführung von Potentialen zum Bauelement ausnutzbar, so daß während der Justierung (auch noch während der anschließenden Laser-Verschweißung) dem opto-elektronischen Bauelement seine Betriebsspannungen zugeführt werden können, wodurch die Justierung (und Fixierung) unter optima- ler optischer Kopplung zwischen Bauelement und Glasfaser unter Betriebsbedingungen eingestellt werden kann. Der Justierarm für die z-Achse kann hierbei Bestandteil eines Handhabungsgerätes/Auto maten sein, so daß die Justierung/Fixierung einschließlich der Optimierung der optischen Kopplung auch vollautomatisch durchgeführt werden kann.In the example shown in Figure 6, the adjustment arm is for the z-axis can be used simultaneously for the supply of potentials to the component, so that during the adjustment (also during the subsequent laser welding) to the opto-electronic Component can be supplied with its operating voltages, making the adjustment (and fixation) under optimal ler optical coupling between component and fiber can be adjusted under operating conditions. The adjusting arm for the z-axis it can be part of a handling device / machine, so that the adjustment / fixation including the optimization of the optical coupling can also be carried out fully automatically.
2 Patentansprüche 9 Figuren2 claims 9 figures
Claims (2)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19843429282 DE3429282A1 (en) | 1984-08-08 | 1984-08-08 | Optoelectronic module |
EP19850101906 EP0155528B1 (en) | 1984-02-22 | 1985-02-21 | Optoelectronic housing module |
AT85101906T ATE40605T1 (en) | 1984-02-22 | 1985-02-21 | OPTOELECTRONIC MODULE HOUSING. |
DE8585101906T DE3568087D1 (en) | 1984-02-22 | 1985-02-21 | Optoelectronic housing module |
CA000474917A CA1235785A (en) | 1984-02-22 | 1985-02-22 | Opto-electronic module housing |
US06/704,332 US4707067A (en) | 1984-02-22 | 1985-02-22 | Opto-electronic module housing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19843429282 DE3429282A1 (en) | 1984-08-08 | 1984-08-08 | Optoelectronic module |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3429282A1 true DE3429282A1 (en) | 1985-04-11 |
Family
ID=6242655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19843429282 Withdrawn DE3429282A1 (en) | 1984-02-22 | 1984-08-08 | Optoelectronic module |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3429282A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4656352A (en) * | 1984-09-24 | 1987-04-07 | Siemens Aktiengesellschaft | Optoelectronic transducer |
EP0279932A1 (en) * | 1987-01-29 | 1988-08-31 | International Business Machines Corporation | Optical communication signal source |
EP0345874A1 (en) * | 1988-06-06 | 1989-12-13 | Koninklijke Philips Electronics N.V. | Optoelectronic arrangement having a coupling between an optical transmission fibre and a semiconductor laser diode |
US4917453A (en) * | 1987-01-29 | 1990-04-17 | International Business Machines Corporation | Optical communication signal source |
EP0365180A2 (en) * | 1988-10-17 | 1990-04-25 | AT&T Corp. | Method for welding relatively small parts |
EP0455939A2 (en) * | 1990-05-07 | 1991-11-13 | Corning Incorporated | Method and module for coupling from a light emitting diode |
EP0620460A1 (en) * | 1993-04-16 | 1994-10-19 | Sumitomo Electric Industries, Limited | Semiconductor element module |
DE4330364C1 (en) * | 1993-09-08 | 1995-03-02 | Leuze Electronic Gmbh & Co | Housing for photoelectric devices, consisting of a hollow profiled tube piece |
EP0887865A1 (en) * | 1997-06-24 | 1998-12-30 | Micro Optics Company Ltd. | Optical module with an optoelectronic semiconductor device |
DE10032796A1 (en) * | 2000-06-28 | 2002-01-17 | Infineon Technologies Ag | optomodule |
-
1984
- 1984-08-08 DE DE19843429282 patent/DE3429282A1/en not_active Withdrawn
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4656352A (en) * | 1984-09-24 | 1987-04-07 | Siemens Aktiengesellschaft | Optoelectronic transducer |
EP0279932A1 (en) * | 1987-01-29 | 1988-08-31 | International Business Machines Corporation | Optical communication signal source |
US4917453A (en) * | 1987-01-29 | 1990-04-17 | International Business Machines Corporation | Optical communication signal source |
EP0345874A1 (en) * | 1988-06-06 | 1989-12-13 | Koninklijke Philips Electronics N.V. | Optoelectronic arrangement having a coupling between an optical transmission fibre and a semiconductor laser diode |
EP0365180A2 (en) * | 1988-10-17 | 1990-04-25 | AT&T Corp. | Method for welding relatively small parts |
EP0365180A3 (en) * | 1988-10-17 | 1991-09-11 | AT&T Corp. | Method for welding relatively small parts |
EP0455939A2 (en) * | 1990-05-07 | 1991-11-13 | Corning Incorporated | Method and module for coupling from a light emitting diode |
EP0455939A3 (en) * | 1990-05-07 | 1992-05-13 | Corning Incorporated | Method and module for coupling from a light emitting diode |
EP0620460A1 (en) * | 1993-04-16 | 1994-10-19 | Sumitomo Electric Industries, Limited | Semiconductor element module |
US5452389A (en) * | 1993-04-16 | 1995-09-19 | Sumitomo Electric Industries, Ltd. | Semiconductor element module |
DE4330364C1 (en) * | 1993-09-08 | 1995-03-02 | Leuze Electronic Gmbh & Co | Housing for photoelectric devices, consisting of a hollow profiled tube piece |
EP0887865A1 (en) * | 1997-06-24 | 1998-12-30 | Micro Optics Company Ltd. | Optical module with an optoelectronic semiconductor device |
US5973862A (en) * | 1997-06-24 | 1999-10-26 | Nippon Sheet Glass Company Ltd. | Optical module |
DE10032796A1 (en) * | 2000-06-28 | 2002-01-17 | Infineon Technologies Ag | optomodule |
US6483960B2 (en) | 2000-06-28 | 2002-11-19 | Infineon Technologies Ag | Optomodule and connection configuration |
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