DE102008035559A1 - Light or voltage source has one or more luminophores in combination with electro-conductive particles, where light is generated from light source by electrically stimulated luminescence of luminophores - Google Patents

Abstract

The light or voltage source has one or more luminophores (2) in combination with electro-conductive particles (1,3), where the light is generated from light source by electrically stimulated luminescence of luminophores. The active luminophores generate light and voltage at surface of the particles. An independent claim is included for a method for manufacturing antenna.

Description

Technical area:

The The invention relates to the construction of electroluminescent sources and similar photovoltaic elements according to the Preamble of claim 1 and method for their preparation.

State of the art:

Are known from predominantly inorganic semiconductor layers constructed luminescent and comparable structured photovoltaic elements with or without integrated semiconductor quantum dots. For example, in the older one GB 1499897 or in US 5382813 Light emitting diodes (LED) are presented. With these LEDs or photovoltaic elements, the generation of light or voltage takes place in the interior of semiconductor layers with a high refractive index and high demands on the layer qualities.

adversely in this technique, on the one hand, high production costs of pure layers or the reduced quantum yield at lower Semiconductor quality, the z. B. by non-radiative recombination caused by lattice defects. As well as the difficult extraction of the light from the high refractive index semiconductor element due to Total reflections at the boundary layer to the environment.

Also known in the art are luminescent illuminants or corresponding photovoltaic elements which consist of predominantly organic semiconductor layers with or without integrated nanocrystals. US 2005/0214967 shows z. B. such a photovoltaic element. In WO 2005/011013 or WO 03/061026 On the other hand, corresponding organic electroluminescent devices (OLEDs) are described.

From Disadvantage of these solutions are the partially lower Efficiencies or luminous efficiencies and the limited color stability. OLEDs are z. B. sensitive to contamination and certain emitter dyes age faster than others. It However, there are usually no functional elements that could counteract these changes.

Also disclosed are devices for generating light as in WO 99/16106 in which electrons tunneling through organic molecules are used to excite the molecules for luminescence.

These Devices have the disadvantage that the luminescent organic Molecules are not firmly attached to the electrodes. This complicates the production because z. B. the required electrode spacing is not is inevitably guaranteed and also works the danger of molecules and electrodes being relative to each other move. As a result, however, the luminescence can be deleted when the molecules are too close to the metal electrodes are located. Also, by the described electrodes, the intrinsic Quantum yield of the molecules can not be increased.

Furthermore, similar devices are also known to inorganic LEDs, which are provided with additional antennas in order to increase the quantum yield (eg. JS Pleaseen et al., "Plasmon-Enhanced Photoluminescence of Silicon Quantum Dots: Simulation and Experiment", J. Phys. Chem. C 2007, 111, pages 13372 to 13377 )

disadvantage In this solution, these are still the basic ones Problem of light extraction from the semiconductor crystal and the comparatively high production costs in conventional manufacturing processes. Farther is the concept presented rel. not very flexible: it is not possible z. B. simply the emitter substance (Si quantum dots) and associated Antennas working together for a given emission frequency were optimized with emitter substance and antennas of other wavelengths to mix because the antennas for the entire semiconductor crystal are designed. The production of "multicolored" emitters (eg for white light) is thus considerably more difficult. In addition, the presented LED has a rel. great Volume, because the antennas only amplify the radiant To cause decay rate. That is, the size an LED can be further reduced, if for el. contacting the emitter substance no separate functional elements required are.

Finally, OLEDs are also known with metallic antennas integrated into the semiconductor layers, which are enveloped by el. Insulating spacers ( WO 2005/031884 ). The antennas increase the quantum efficiency of emitters which are at a suitable distance from the metallic antenna surface. The spacers prevent erasure of the luminescence at too small distances.

These Solution has the disadvantage that the spacers indeed restrict the minimum distance of the radiation emitters, but can not set the real distance. It So is also emitter substance in much larger Distance from an antenna surface in the OLED. The Quantum yield decreases at too large intervals but again.

One Another disadvantage arises from the fact that the orientation of the emitter dipoles (eg, an organic emitter molecule) relative to the antenna surface is undetermined, d. H. the emitter dipole itself in any Orientation to the antenna can be located. But only at vertical Alignment of the emitter dipole can be the maximum quantum efficiency be achieved. Likewise, it is not possible emitter substance certain wavelengths and associated, for this emitter substance and wavelength optimized antennas, efficient with emitters and antennas of other wavelengths to mix because the emitters and antennas are not in one unit combined.

Of the In addition, the general state of the art usually does not allow the direct generation of polarized light radiation, allowing for Applications where this is needed, the light output is reduced by polarizing filter. The light sources or Photovoltaic elements of the prior art can be frequently not in integrated circuits of z. B. microchips with dimensions integrate, which lie only in the range of the structure widths.

Presentation of the invention:

task The invention is the light sources or lamps or photovoltaic elements or to represent voltage sources in which the aforementioned Disadvantages do not exist, but the increased quantum efficiency even if the intrinsic yield -. B. because of lower semiconductor qualities - reduced is. By the light sources according to the invention and photovoltaic elements become aging phenomena and color changes, as they are z. B. in OLEDs and PLEDs are known, significantly reduced, because Optical antennas reduced efficiencies of the emitter substances balance and prevent their premature aging.

A another task is to present a flexible system in the single antenna emitter of different emitter substances combined with associated optical antennas. To be optical antennas and the emitter substance in an exact defined distance from each other by an el. Contact connected. Not only semiconducting emitter substances, but z. As well as metal clusters or Karbon nanotubes be combined with the antennas, so that these emitters also on AC voltage can be operated.

Certain Embodiments of this invention facilitate light extraction by light generation at the surface. The production can z. B. thereby by self-organization of the individual nano-light sources on prepared substrates cheaper than in conventional epitaxial processes, because monocrystalline Layers are not required.

additionally can the size of each light source in this Invention be minimal, because the current transport substantially over the integrated antenna particles runs and simultaneously the luminescence quenching is avoided by el. Contacts (especially metal contacts) would otherwise be generated. Thereby can z. B. devices are realized in the a size in the mm range millions of individually controllable Antenna elements possess, if - as in certain Variants shown - in microchips to get integrated.

And finally emitters and receivers can be realized, generate or absorb the selectively polarized light. Thereby and because states excited by the antennas in the emitter substances Decay faster, they are suitable for high frequency applications z. B. also in the field of quantum cryptography.

These Tasks are accompanied by light sources or photovoltaic elements the features of claim 1 and the claims 32 and solved below. Embodiments and modifications are the subject of the respective dependent claims.

The Light sources and photovoltaic elements of the subject Invention are essentially constructed according to each other, which is why, for the sake of brevity, often only the light sources are named, but nevertheless the photovoltaic elements or voltage sources are meant.

The Light sources consist of electrically conductive contact particles, individually or in pairs with luminescent (or for Photovoltaic) absorbing elements are coupled. These luminescent / absorbent Elements can and will be of different kinds in the following simply called Lumophor. The electrically conductive Contact particles can have a metallic core. In the metallic core of the contact particle can by the lumophore or by incident light surface plasmons be excited, which the quantum efficiency of the light source or of the photovoltaic element can increase. That's why the contact particles are often referred to as antennas, even if in individual cases none must possess metallic cores.

Around to produce larger bulbs is a plurality these light sources to electrical conductors or conductor layers coupled. This can be done by depositing (eg sedimentation from a Solution) or growth (eg using PVD, CVD or MOCDV) the individual light sources or their components (the antennas and lumophores) on the conductor layers so they open up rest on the conductor layers. Or it can be immobilized on molecules that have specific anchor groups for own the individual light sources or their components and themselves on the tracks are done. In the same way you can the components of the light sources, ie the antennas and lumophore, be linked with each other automatically.

For example by means of the methods of [8] or [18] can be prepared from nanoparticles defined particle chains are generated. On spherical Particles have the SAM layers "defects" or Pole on. Such methods can be used to "pre-made" antenna emitters produce, which then later on z. B. a conductor layer can be immobilized. It can z. B. starting from a nanocrystal as a lumophore trimer from a lumophore and two antennas are generated.

The building blocks in this invention may e.g. B. by the techniques of self-assembling monolayers (= SAM) and functionalized molecular bridges are joined together. These molecules may be organic wires (eg, conjugated organic polymers), biological materials such as DNA, but also inorganic molecules (eg, polysilanes). Further examples of suitable bridge molecules can be found, for. In WO 2004/022714 - There molecular bridges are presented, which are z. B. for injecting electrons or holes in a lumophore - or in US6979544 , where also molecular wires are presented which are useful in this invention. In WO 02/020873 . WO03 / 074510 . WO2005 / 083435 There are further details for creating SAM's on different substrates. In DE 20 2005 012 142 z. For example, there is a comparable application in which contacts are connected by means of molecular wires. WO 2006/093467 . WO 03/041182 or WO 95/02251 show molecular diodes, which as in this invention by anchor groups polungsrichtig can be bound to contacts, which is why reference is made to them for more information. In [19] the production of nanostructures from colloidal "building blocks" on pre-prepared substrates - similar to this invention - is shown. In the following, however, only closer reference is made to organic bridging molecules:
The bridging molecules allow the luminescent materials (eg, molecules or nanocrystals) to be fixed and aligned by means of intermolecular forces. The intermolecular forces can arise either from a chemical bond or a physical adhesion between the molecule and its substrate. In this case, the molecules, which consist of an anchor group, a connecting molecular skeleton and a functional group, are fixed by the anchor group on the substrate. The functional group may, for. B. represent another anchor group for a second substrate or a special surface property - such. B. a hydrophobic surface in a methyl group - cause. The molecular framework separates the anchor group and the functional group and thus establishes a defined distance.

• – Silane, Silikate, Siloxane für Unterschichten aus Metalloxiden z. B. Al2O3, Glas, SiO2, Quarz, GaAs, Si3N4, GaN, AlN, Si
• – Phosphonsäuren für Oxide wie ITO, Al2O3, TiO2, ZrO2, SnO, SnO2
• – Karbonsäuren für Metalloxide z. B. Al2O3, TiO2, ZrO2, SnO, SnO2, Ag
• – Fettsäuren für Al2O3, AgO, Ag
• – Thiole für Au, Ag, Fe, Cu, CdS, CdSe, InAs, GaAs, Pt
• – Sulfide und Disulfide für Au, Ag, Cu, GaAs, AlGaAs
• – Amine für Pt
• – Methyl-, Carboxyl-, Hydroxyl-, Aminogruppen und viele andere (siehe z. B. WO03/041182 Seite 11), um Kontakte zu anderen Kopplungsgruppen herzustellen, die sich z. B. an Lumophormolekülen befinden oder um eine Oberfläche zum selektiven Beschichten mit MOCVD vorzubereiten.

The functional group may, for. B. bind the lumophores in which it has another anchor group for the lumophore, or it may itself have luminescent function. The following anchor or end groups are common, for example, to fix the molecules in the SAM on the various documents or to connect the building blocks of the antenna emitter with each other:

• - Silanes, silicates, siloxanes for sublayers of metal oxides z. Al2O3, glass, SiO2, quartz, GaAs, Si3N4, GaN, AlN, Si
• - Phosphonic acids for oxides such as ITO, Al2O3, TiO2, ZrO2, SnO, SnO2
• - Carboxylic acids for metal oxides z. Al2O3, TiO2, ZrO2, SnO, SnO2, Ag
• - fatty acids for Al2O3, AgO, Ag
• Thiols for Au, Ag, Fe, Cu, CdS, CdSe, InAs, GaAs, Pt
• - sulfides and disulfides for Au, Ag, Cu, GaAs, AlGaAs
• - Amines for Pt
• Methyl, carboxyl, hydroxyl, amino and many others (see eg. WO03 / 041182 Page 11) to Establish contacts with other coupling groups, which are z. On lumophore molecules or to prepare a surface for selective coating with MOCVD.

The linkage of the bridging molecule to other components, such as the lumophore, can be by any chemical reaction that produces a bond. Protective groups can temporarily deactivate anchor groups, so that, for example, B. a polymerization of antennas or lumophores can be avoided (see also see eg. WO03 / 041182 ). The length of the molecular skeleton (eg an organic residue) acting as a spacer and the additional optional functional group then determines the distance z. B. the antenna from the associated lumophore.

The electrical conductivity of the molecular bridge can be customized. If the organic rest of the SAM molecules z. B. from an alkyl group with C-C single bonds, so The result is a good insulator, because of the large difference in energy the σ and σ * orbitals. This can be at short range (about 1 nm) but still durchtunnelt.

Become but instead z. B. molecules with C = C double bonds and aromatic compounds (e.g., benzene rings) because of the lower energy difference of π and π * Orbital a better el. Leader. This results in molecules in which single and multiple bonds alternate, and which are therefore called conjugated. Corresponding semiconducting Molecules without anchor groups are z. B. also for OLEDs used.

Comparable as with inorganic semiconductors, the conjugated polymers become doped to improve their electrical conductivity. The Dopen happens z. B. by oxidation (p-doping with eg., NO2) or Reduction (n-doping with, for example, NH 3 or metals) of the polymer, to generate charge displacements in the polymer chain. The Doperates are around 10 to 30%, ie. that is, every 10th to 3rd monomer unit oxidizes or reduced. It can also lead to the formation of charge-transfer complexes in the bridge molecules or the compounds with the z. B. metallic Lumophorpartikeln come. Such charge-transfer complexes in turn can contribute to light generation under current flow the embodiments as a light source or for light absorption and generate voltage in the photovoltaic elements.

SAM layers can also be subsequently brought by dopes from an insulating form in the el. Conductive. An asymmetrical structure also allows the generation of molecules that can act as molecular diodes. They usually consist of an acceptor separated by a barrier from the donor. Examples of molecular diodes can also be found in z. B. WO03 / 041182 , The presented there molecular diodes are also suitable as rectifier diodes, light emitter (molecular light-emitting diode) and also as a photodiode. The molecular LEDs shown there can be z. B. be bound as a lumophore in this invention to the antennas.

By Variation of the chain length of the molecular bridge can the distances of the connected components (eg the distance lumophore antenna). For required large distances can either longer molecules or multilayers (multiple SAM Layers on top of each other). Through an exchange the end group, the molecules can be different Bind substrates.

• – Die Abstandshaltermoleküle auf Antenne und Lumophor verteilt werden, so dass sie jeweils nicht so lang sein müssen.
• – Die Molekülketten können durch geladene Seitengruppen zusätzliche gegenseitige Abstoßung erfahren. Aromatische bzw. konjugierte SAM-Moleküle (z. B. Oligophenyldithiole) besitzen außerdem ein steiferes „Rückgrat” als Alkan-Ketten. Dadurch lassen sich längere Abstände überbrücken.
• – Durch Polymerisation können die Moleküle sich auf der Antenne stabilisieren, dadurch dass Querverbindungen zwischen den Molekülen entstehen. Damit können auch erheblich dickere Schichten erzeugt werden.
• – Die Molekülschichten können durch dünne dielektrische Schichten oder dickere Halbleiterschichten um die Antennen ergänzt werden.
• – Die Molekülschichten können durch Halbleiterschichten und dicke dielektrische Schichten um die Antennen-Partikel ergänzt werden. Hierbei übernehmen die Halbleiterschichten dann den Stromtransport zum und vom Lumophor.

Because to minimize the luminescence attenuating radiationless energy transfer from the lumophore to the metal antenna a minimum distance of the lumophore to the antenna of about 3 to 10 nm is observed, the molecules must sit relatively long and stretched aligned on the antenna. For this, the molecular chains must stabilize by mutual repulsion. Pure alkyl chains can only be present on a nanoparticle stretched to about 16 carbon atoms (corresponding to a length of about 3.6 nm) because the mutual repulsive forces decrease due to the radially increasing distances between the molecules. As a solution to this problem, you can:

• - The spacer molecules are distributed to the antenna and lumophore, so they do not have to be so long.
• - The molecular chains can experience additional mutual repulsion by charged side groups. Aromatic or conjugated SAM molecules (eg, oligophenyl dithiols) also have a stiffer "backbone" than alkane chains. This allows longer distances to be bridged.
• - Through polymerization, the molecules can stabilize on the antenna, creating cross-links between the molecules. This also significantly thicker layers can be generated.
• The molecular layers can be supplemented by thin dielectric layers or thicker semiconductor layers around the antennas.
• The molecular layers can be supplemented by semiconductor layers and thick dielectric layers around the antenna particles. The semiconductor layers then take over the current transport to and from the lumophore.

On the particles can also z. B. by a subsequent Ligand exchange mixed molecular shells different molecules with different anchor groups be generated. As a result, z. B. the number of connections from Lumophores are limited.

• – Molekulare Brücken, die 2 Kopf- bzw. Ankergruppen aufweisen und in einem Lösungsmittel (z. B. Ethanol, Hexan etc.) gelöst sind, werden mit dem Lumophor (z. B. Nanokristall) bzw. den Antennen oder dem Emittersubstrat in Kontakt gebracht. Dazu kann z. B. das Substrat mit der Lösung betropft oder eingetaucht werden. Um Veränderungen der Partikel, des Substrats und der Moleküllösungen (z. B. Oxidation) zu vermeiden, müssen die Materialien in Schutzgas aufbewahrt und die Arbeiten ebenso unter Schutzgasatmosphäre durchgeführt werden.
• – Die Ankergruppen verbinden sich mit dem Substrat und den Partikeln oder Molekülen. Die Molekülketten ordnen sich später innerhalb einiger Stunden etwa parallel zueinander (auf ebenen Substraten) in einem bestimmten Winkel je nach Substrat und Brückenmolekül – z. B. bei Thiolaten auf Ag 0°, auf Au 30°- zur Oberflächennormalen des Substrats an. Die Moleküle sind so eng wie möglich (Abstand von rund 0,3 nm auf Ag und Au) angeordnet.
• – In weiteren Prozessschritten kann sich die zweite Ankergruppe mit einem weiteren Partikel verlinken usw.

The procedure for the "SAM" is roughly the following:

• Molecular bridges having 2 head or anchor groups and dissolved in a solvent (eg, ethanol, hexane, etc.) contact the lumophore (eg, nanocrystal) or the antenna or emitter substrate brought. This can z. B. the substrate is dripped or dipped with the solution. In order to avoid changes in the particles, the substrate and the molecule solutions (eg oxidation), the materials must be stored in protective gas and the work also carried out under a protective gas atmosphere.
• - The anchor groups combine with the substrate and the particles or molecules. The molecular chains arrange later within a few hours approximately parallel to each other (on flat substrates) at a certain angle depending on the substrate and bridge molecule - z. B. in thiolates on Ag 0 °, Au to 30 ° - to the surface normal of the substrate. The molecules are arranged as close as possible (distance of about 0.3 nm to Ag and Au).
• - In further process steps, the second anchor group can link to another particle etc.

Except purely linear molecular bridges can, for. B. for automatically connecting the emitter components in a matrix trigonal, tetrahedral, etc. molecular bridges become.

In order to obtain greater flexibility, a more favorable electronic connection between the components (antenna, trace, lumophore) or different surface properties for the same materials, the components of the light source can also be coated prior to linking with additional layers. Layers for changing the surface properties can consist of dielectric, metallic, semiconducting or also organic layers (eg a SAM with specific functional groups). For example, an antenna with "surface modification layers" of z. As silicon or carbon are coated, instead of a thiol anchor group, a CC or C-Si bond of the bridge molecule with z. B. to achieve a gold antenna. This can reduce the electrical contact barrier [5]. Or it can be equipped with a chemically different surface an antenna or a track to achieve that only the antenna with this surface can bind to a specific trace. In order to ensure that a lumophore (eg a molecular diode) only poles correctly polarized to the antennas, specific surfaces can also be used. It can, for. B. between an antenna 1 with a surface 1 and an antenna 2 with a surface 2 a lumophore with two anchor groups 1 * and 2 * are correctly bound to the antennas in such a way that the anchor group 1 * only touches the surface 1 the antenna 1 and the anchor group 2 * only to the surface 2 the antenna 2 binds and vice versa. The surface 1 can z. B. be a silver surface and the surface 2 a silver surface modified by a SAM layer.

The Antennas can - as mentioned - off Metals, semiconductors or combinations exist. The coating the antennas can also serve improved corrosion protection, the z. B. prevents oxidation of the metal core. Also, the Working function of the antenna by coating with materials that have a have low or higher work function: z. Eg Mg, Ca, various semiconductors, ITO, BaO, CeB6, etc., can be optimized.

By appropriate reactions further layers can be applied to a previously applied SAM layer. This results in several highly ordered molecule layers one above the other (multilayers). This can be used for selective coating of surfaces. In some embodiments can thus z. B. spaces between particles are filled. The SAM layers can also be formed by a variety of methods (eg, microcontact printing, lithography, methods as in US Pat WO 03/033127 or WO 2004/005587 ) are structured. As a result, z. As an orderly deposition of the antennas on the substrate for applications such as displays, image sensors, etc. can be achieved.

The luminescent and absorbing elements (here called Lumophore) in this invention can basically be all media (singlet and triplet emitters) which can be stimulated to luminesce by current flow or which undergo electronic excitation upon light absorption. Due to the The effect of the antennas is especially advantageous for lumophore with low intrinsic quantum efficiency.

• – Moleküle, die einen LUMO/HOMO Übergang besitzen, CT-Übergänge, Donor-Akzeptor-Kombinationen: • Donor-Akzeptor bzw. Donor-Bridge-Akzeptor-Systeme in einzelnen Molekülen oder in Übergängen (Beispiele: Donor-Bridge-Akzeptor-System in einer molekularen Diode oder im Übergang zwischen einem Brückenmolekül als Donor und einem daran gekoppelten Akzeptor z. B. Fulleren- oder Halbleiterpartikel, oder zwischen einem Donor-Partikel (z. B. Nanokristall) und einem z. B. daraufliegenden, durch Liganden getrennten Antennenpartikel, oder einer p-Halbleiterschicht, die auf eine mit Akzeptoren (z. B. C60) bedeckten Antenne beschichtet wurde) • Farbstoffmoleküle (z. B. Pyridine, Oxazine, Rhodamine, Perylen und Rubren, Stilbene...), Halbleitermoleküle (z. B. Polyfluorenderivate, Poly-(p-phenylenvinylen)-derivate (PPV), Aluminium(III)-tris-(8-hydroxy-chinolinat) (Alq3), 4-(Dicyanomethylen)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM), Spirobifluorenverbindungen, Polysilane usw.) • Beispiele aus WO 03/041182 oder WO 99/21935 und beliebige andere molekulare Dioden oder auch biologische Moleküle, die z. B. eine Ladungsverschiebung bei Lichtabsorption aufweisen. • Moleküle mit starkem Charge-Transfer-Übergang (CT) parallel zur Stromrichtung z. B. 4-Dimethylamino-4'-nitrostilbene, All-trans-Retinal (C₂₀H₂₈O) • Verbindungen von Molekülen insbesondere den Brückenmolekülen mit metallischen Clustern oder Quantenpunkten, Fullerenen oder Nanokristallen zur Bildung von Charge-Transfer Übergängen. • Metallorganische Phosphoreszenzemitter wie z. B. aus WO2004/026886 bekannt, Molekülquantenpunkte. • Moleküle, die sich zwischen den Antennen befinden und durch unelastische Stöße der tunnelnden Elektronen angeregt werden z. B. H2TBPP, HB-DC, MEH-PPV, Porphyrine usw. Diese Version ist auch für Wechselspannung geeignet. Die Moleküle können z. B. auf el. leitenden Schichten verankert sein, die thermische Elektronen emittieren können (z. B. LaB6).
• – Quantenpunkte (Nanokristalle) und Komplexe aus mehreren Quantenpunkten z. B.: • Halbleiter-Quantenpunkte (weitere Informationen zu verwendbaren Nanokristallen siehe z. B. WO 2005/017951 oder US 6,207,229 ). Die (Emissions) wellenlänge hängt u. a. von der Größe des Quantenpunkts ab. Das Material besteht aus Element- oder Verbindungshalbleitern z. B. p- oder n- dotiertes ZnS, ZnSe, MgSe; MgS, CaSe, CaS, CdS, CdSe, ZnO, TiO2 usw., die durch z. B. kolloidale Synthese erzeugt wurden. Sie können auch mit anderen Halbleitern mit vorzugsweise größerer el. Bandlücke umhüllt sein, um die Lichtausbeute zu erhöhen. Aufgrund der Antennen können auch indirekte Halbleitermaterialien gute Quantenausbeuten erreichen. Die Umhüllung des Halbleiterquantenpunkts besitzt für Emitter vorzugsweise eine zum Kern symmetrische aber größere Bandlücke, für Empfänger bzw. Photovoltaikelemente dagegen eine versetzte Bandlücke (siehe [21] S. 459). • Einzelne oder mehrere Metall-Cluster aus z. B. Ag oder Au. Cluster aus mehreren Metallmolekülen. Beispielsweise: Silbernanocluster Ag₂ bis Ag₈ [14]. Die Ag-Cluster können z. B. mittels molekularer Brücken an die Antennen gebunden werden. Derartige Emitter sind ebenfalls für Wechselspannung geeignet.
• – Karbonnanoröhren. Sie zeigen z. B. eine geringe Lumineszenz-Quantenausbeute. Durch molekulare Linker können sie zwischen die Antennen gebracht werden. Antennen können ihre Quantenausbeute erhöhen.

These are, inter alia:

• - Molecules possessing a LUMO / HOMO transition, CT transitions, donor-acceptor combinations: • Donor-acceptor or donor-bridge acceptor systems in single molecules or in transitions (examples: donor-bridge acceptor system in a molecular diode or in the transition between a bridging molecule as a donor and an acceptor coupled thereto, for example fullerene or semiconductor particles, or between a donor particle (eg nanocrystal) and a ligand-separated one, for example Antenna particles, or a p-type semiconductor layer, which has been coated on an antenna covered with acceptors (eg C60)) • dye molecules (eg pyridines, oxazines, rhodamines, perylene and rubrene, stilbenes ...), semiconductor molecules ( for example, polyfluorene derivatives, poly (p-phenylenevinylene) derivatives (PPV), aluminum (III) tris (8-hydroxyquinolinate) (Alq3), 4- (dicyanomethylene) -2-methyl-6- ( p-dimethylaminostyryl) -4H-pyran (DCM), spirobifluorene compounds, polysilanes, etc.) examples from WO 03/041182 or WO 99/21935 and any other molecular diodes or biological molecules, the z. B. have a charge shift in light absorption. • Molecules with a strong charge transfer transition (CT) parallel to the current direction z. B. 4-Dimethylamino-4'-nitrostilbene, All-trans retinal (C ₂₀ H ₂₈ O) • Compounds of molecules, in particular the bridge molecules with metallic clusters or quantum dots, fullerenes or nanocrystals to form charge-transfer transitions. • Organometallic phosphorescence emitters such. B. off WO2004 / 026886 known, molecular quantum dots. • Molecules that are located between the antennas and are excited by inelastic collisions of the tunneling electrons. As H2TBPP, HB-DC, MEH-PPV, porphyrins, etc. This version is also suitable for AC voltage. The molecules can, for. B. anchored to el. Conductive layers that can emit thermal electrons (eg., LaB6).
• - Quantum dots (nanocrystals) and complexes of several quantum dots z. For example: • Semiconductor quantum dots (for more information on usable nanocrystals, see, for example, WO 2005/017951 or US 6,207,229 ). The (emission) wavelength depends inter alia on the size of the quantum dot. The material consists of element or compound semiconductors z. B. p- or n-doped ZnS, ZnSe, MgSe; MgS, CaSe, CaS, CdS, CdSe, ZnO, TiO2, etc., which are replaced by e.g. B. colloidal synthesis were generated. They can also be coated with other semiconductors, preferably with a larger el. Band gap, in order to increase the luminous efficacy. Due to the antennas, even indirect semiconductor materials can achieve good quantum yields. The envelope of the semiconductor quantum dot preferably has a band gap that is symmetrical to the core for emitters, but an offset band gap for receivers or photovoltaic elements (see [21] p. 459). • Single or multiple metal clusters of z. B. Ag or Au. Cluster of several metal molecules. For example: silver nanoclusters Ag ₂ to Ag ₈ [14]. The Ag clusters can, for. B. be bound by means of molecular bridges to the antennas. Such emitters are also suitable for alternating voltage.
• - Carbon nanotubes. They show z. B. a low luminescence quantum yield. Through molecular linkers they can be brought between the antennas. Antennas can increase their quantum efficiency.

If the lumophore by injection of electrons into the LUMO or the Conduction band has been put into the excited state, so it can by several circumstances to unwanted non-radiating Recombinations come: indirect band transitions (eg if a Si quantum dot is used), Auger recombinations, on lattice defects and impurities of the semiconductor materials the quantum dots and antennas - this follows z. B. from the deviating lattice constants of antenna core and cladding as well as surface recombinations on the semiconductor surfaces the quantum dots and antennas.

• – Passivierung bzw. Beschichtung der Oberflächen. Beschichtung mit z. B. einem Halbleiter oder mit einer Molekülhülle. Die Molekülhülle, die gleichzeitig der Fixierung und Spannungsversorgung dient, kann die freien Oberflächenzustände reduzieren.
• – Verwendung von optischen Antennen. Dadurch entstehen zusätzliche strahlende Zerfallskanäle und die strahlende Zerfallsrate wird erheblich gesteigert.

The non-radiative recombinations and surface effects on the lumophore and the semiconductor layers of the antennas can be reduced by:

• - Passivation or coating of the surfaces. Coating with z. As a semiconductor or with a molecular shell. The molecular envelope, which simultaneously serves for fixation and voltage supply, can reduce the free surface states.
• - Use of optical antennas. This results in additional radiating decay channels and the radiating decay rate is significantly increased.

In addition to the non-radiative recombinations in the lumophore there is also the problem of quenching the fluorescence. In the majority of the embodiments, the antennas consist of metals (eg Ag, Al, Au, Cu, Pd, Pt, Os). Because the lumophore is close to the metal surface of the antenna, It can come by a resonant energy transfer (see also FRET) and fluorescence quenching to a reduction in the quantum yield of the lumophore. This radiationless damping increases very sharply with decreasing distances to the metal surface. The resonant energy transfer decreases with distance ^ 6 and is therefore important only for smallest distances, the fluorescence quenching has a longer range up to about 5 nm from the antenna.

however There is also an opposing effect, which results comes that the surface plasmons excited by the lumophore on the antenna additional radiating decay channels for represent the lumophore. This can be a lumophore, for example instead of a non-radiative surface recombination one radiative recombination via the detour of the surface plasmons experience, which increases its quantum efficiency accordingly. This advantage is particularly noticeable for lumophores with less intrinsic quantum yield, while in contrast to Lumophore with very high intrinsic yield no improvement Experienced.

additionally can the electrons in the metal antenna by incident Light to be excited to resonant vibrations, which in turn a field-enhancing effect on the lumophore exert. This can increase the efficiency of the design as a voltage source be increased.

The Effect of the antennas on the lumophore thus provides the superposition of several effects, the size of the individual effects of the exact constellation: antenna material, Distance antenna to lumophore, orientation of the radiating dipole of the lumophore to the antenna surface, refractive index of the surrounding Dielectric, antenna shape and emission frequency of the Lumophors depend.

Thereby results u. a., That the quantum efficiency of the Lumophors in a maximum distance to the antenna surface. And that maximum quantum efficiency is only achieved when the dipole of the lumophore oscillates perpendicular to the antenna surface. Therefore, the electric current flows substantially over in this invention the antennas through the lumophore. Depending on the lumophore used thereby the direction of the radiating dipole more (eg molecule with dipole in current direction) or less (eg semiconductor nanocrystal) established.

One influencing factor on the effect of the antenna is therefore the shape and size of the antenna:
Analogous to the micro or radio wave used z. B. dipole antennas comparable constructions can also be used in the optical field. In the radio range at a dipole antenna apply z. B. certain rules, according to which the total length of the two antenna legs a multiple of λ / (2 * n _medium ) should be to bring the antenna in resonance.

in the Although the optical wavelength range applies in principle same rules, however, affects due to the high frequencies of the EM field, the inertia of the conduction electrons. The Length of the antenna leg z. For example, rel. to λ / 4 be shortened very much.

Also the shape of the antenna is great for its function Importance. Often z. B. so-called "bowtie" antennas used to increase the fluorescence of a near emitter. These Antennas consist of triangular antenna legs, which are with face a peak, the field gain at smaller peak spacing increases sharply. A similar effect have rod-shaped or elliptical antennas, if they are the Lumophore are facing with their pointed ends. Again, you can at the tips higher el. field strengths and quantum yields as z. B. can be achieved in spherical antennas.

If instead of solid metal antenna cores hollow spheres of metal around dielectric Cores used, results in a red shift. Also for elongated antennas, as well as if two or more antenna particles be coupled by small distances, resulting in a Redshift or blue shift of the resonance wavelength relative to the simple ball antenna [3].

By coupling two antennas with distances in the range of 20 or 40 nm, the resonance frequency of the coupled antennas can be shifted to about 60 nm into the red when the electric field is parallel to the connecting axis of the antennas [3]. Two individual antennas then become a large dipole antenna. This is the case with a lumophore paired antenna pair as in this invention. For highest resonance frequencies, therefore, one of the two metal antenna particles can be omitted. If - as in this invention - antennas are "side by side", ie the electric field is perpendicular to the connection axis of the antennas, then there is a slight blue shift of the resonance frequency of about 15 nm. This is the case for. B. in adjacent antenna pairs, the were immobilized on tracks.

at elongated antennas, the resonance wavelength increases z. B. in flattened antennas (small half-axis 20 nm, material Silver) from 650 nm to about 1.2 μm, if the large one Semi-axis of the antenna from 130 to 320 nm enlarged becomes [1]. By changing the antenna shape so can the resonance frequency and the antenna gain are adjusted become.

Another significant factor influencing the antenna results from the dielectric surrounding the antenna. Higher dielectric values or refractive indices of the surrounding material likewise cause a redshift of the resonance frequency and thus of the frequency at which approximately the maximum antenna gain occurs. Because the polarization of the dielectric caused by the antenna counteracts the electron oscillation in the antenna, because the el. Fields around the antenna, which want to cause a "spring back" of the electrons, are weakened by the dielectric. For example, the wavelength of the maximum polarizability α _eff (see Equation 1) of a single spherical silver antenna having a diameter of 50 nm increases from about 300 nm in air (ε _r = 1) to about 450 nm in glass (ε _r = 2.25) and finally to about 1020 nm in GaAs (ε _r = 13)

mit Polarisierbarkeit α in Abhängigkeit von Wellenlänge λ:

und

ε(λ)

= komplexe Dielektrizitätszahl der Metallkerns der Antenne

ε_m

= Dielektrizitätszahl des umhüllenden Dielektrikums

D

= Durchmesser des kugelförmigen Metallkerns der Antenne

The effective polarizability of the individual spherical antenna as a function of the wavelength λ is [3]:

with polarizability α as a function of wavelength λ:

and

ε (λ)

= complex dielectric constant of the metal core of the antenna

ε _m

= Dielectric constant of the enveloping dielectric

D

= Diameter of the spherical metal core of the antenna

calculations and optimizations to antennas in different dielectric environments can also z. For example, according to [1], [2], [16], [15] become.

• • Kleinere Metall-Antennenkerne (ab ca. 40 nm Durchmesser) können verwendet werden.
• • El. leitenden Schichten (z. B. organische Halbleiter) bzw. Brückenmoleküle mit einem rel. niedrigen Brechungsindex können benützt werden.
• • Wenn die el. leitenden Schichten um die Antennenkerne aus Materialien mit höherem Brechungsindex (z. B. anorganischen Halbleitern) bestehen, können diese durch dielektrische Zwischenschichten von der Metallantenne entkoppelt werden. Beispielsweise können ca. 3 bis ca. 60 nm SiO2, Al2O3, MgO, MgF2, KF usw. als eine niedrig brechende Zwischenschicht verwandt werden. Diese Schichten können dazu zusätzlich porös sein.

By using antenna sheaths with different refractive index, the resonance frequency of the antenna can thus be adapted to the requirements. The antennas are therefore z. B. from a metal core with favorable dielectric function in the wavelength range of the emitter. However, for many lumophors (eg, semiconductor nanocrystals), it is necessary for the electrical leads to be able to inject the electrons into the LUMO and the holes into the HOMO of the lumophore, respectively. For this purpose, the metal antennas can be combined with organic or inorganic semiconductors. In order to prevent an undesired redshift of the antenna resonance despite the el. Conductive antenna envelope, several different ways can be gone:

• • Smaller metal antenna cores (from approx. 40 nm diameter) can be used.
• • El. conductive layers (eg organic semiconductors) or bridge molecules with a rel. low refractive index can be used.
• If the electrically conductive layers around the antenna cores consist of materials of higher refractive index (eg inorganic semiconductors), these can be decoupled from the metal antenna by dielectric intermediate layers. For example, about 3 to about 60 nm SiO 2, Al 2 O 3, MgO, MgF 2, KF, etc., can be used as a low refractive interlayer. These layers can additionally be porous.

A Redshift up to the IR range can on the other hand for the variants of photovoltaic elements, photosensors etc. also be beneficial.

Calculation of the spherical antennas:

A further design of the metal cores of spherical antennas can be done according to [4]. A single antenna ball in air is considered (ε _m was set equal to 1). The dipole of the Lumophors can basically oscillate in any position relative to the antenna. The vertical as well as the tangential orientation to the antenna surface represent the extreme cases, the vertical orientation is of considerable advantage. The resonant frequency of the surface plasmons (see also equation 1) should be more in the blue relative to the emission frequency of the lumophore in order to avoid erasure of the luminescence.

Thus, with only one antenna particle near the lumophore, the following amplification Vs of the radiative decay rate for the case of a lumophore radiating perpendicularly to the antenna results: Vs = | 1 + 2 * R ^ 3 / (R + Z) ^ 3 * (ε (ω) -1) / (ε (ω) + 2) | ^ 2 (3)

vs also describes at the same time the amplification of the excitation a Lumophors in the variants of voltage sources and photovoltaic elements.

Also if loud (3) an arbitrarily large antenna is a larger one Reinforcement seems to result in the visible Wavelength range a maximum reasonable diameter the metal sphere of about 150 nm.

For the tangential case, for Vt: Vt = | 1 - R ^ 3 / (R + Z) ^ 3 * (ε (ω) -1) / (ε (ω) + 2) ^ 2 (4)

• – Vs bzw. Vt = Verstärkung der strahlenden Zerfallsrate (relativ zur Situation ohne Antenne)
• – D = Durchmesser der kugelförmigen Antenne (nur Metallteil)
• – R = D/2
• – Z = Abstand des Lumophors zur Oberfläche des Metallkerns der Antenne
• – ε(ω) = Dielektrische Funktion des Metall-Antennenmaterials bei Kreisfrequenz ω des Emitters

With

• - Vs or Vt = amplification of the radiating decay rate (relative to the situation without antenna)
• - D = diameter of the spherical antenna (metal part only)
• - R = D / 2
• Z = distance of the lumophore to the surface of the metal core of the antenna
• - ε (ω) = Dielectric function of the metal antenna material at angular frequency ω of the emitter

For a tangential dipole, the gain is rel. lower. It can be used to increase the quantum yield for design variants with z. B. Semiconductor nanocrystal lumophore an envelope of the antenna with a dielectric (eg, with a dielectric constant ε _m about 2 to about 6.5) increase the quantum efficiency, because thereby Vt increases. This results from the fact that the term "(ε (ω) - 1) / (ε (ω) + 2)" in the function for V actually means "(ε (ω) - ε _m ) / (ε (ω) + 2 _m ) "

However, it also follows that, at the same time, the extent of fluorescence quenching by the increasing energy transfer rate T to the near metal increases with decreasing distance. When the dipole is oriented in the current direction - perpendicular to the antenna - the energy transfer rate (following [4]) is obtained: Ts = 3/8 * Im ((ε (ω) -1) / (ε (ω) + 1)) * 1 / Z ^ 3 * c ^ 3 / ω ^ 3 (5)

In the case of a lumophore radiating tangentially to the antenna, Tt becomes: Tt = 3/16 * Im ((ε (ω) -1) / (ε (ω) + 1)) * 1 / Z ^ 3 * c ^ 3 / ω ^ 3 (6)

• – ε(ω) = Dielektrische Funktion des Metall-Antennenmaterials bei Kreisfrequenz ω des Emitters
• – λ = Wellenlänge
• – c = Vakuumlichtgeschwindigkeit
• – Z = Abstand des Lumophors zur Oberfläche des Metallkerns der Antenne

With

• - ε (ω) = Dielectric function of the metal antenna material at angular frequency ω of the emitter
• - λ = wavelength
• C = vacuum light velocity
• Z = distance of the lumophore to the surface of the metal core of the antenna

T indicates the part of the losses that result from having parts the electromagnetic energy emitted by the lumophore in the antenna finally converted to heat. It can in the electrical contact antenna emitter but further losses u. a .: ohmic losses in the molecular wires, energy flows between the molecule and electron / hole suggestions in the Antenna, etc. arise.

For the quantum efficiency of the system with a spherical antenna, [4] results: Qs = Vs / (Vs + Ts + (1-Q0) / Q0) (7) respectively. Qt = Vt / (Vt + Tt + (1-Q0) / Q0) (8)

• – Q0 = intrinsische Quantenausbeute des Lumophors ohne einen störenden Einfluss (weit weg von metallischen Kontakten).
• – Qt = Quantenausbeute im tangentialen Fall
• – Qs = Quantenausbeute im radialen Fall

With

• - Q0 = intrinsic quantum efficiency of the lumophore without any interfering influence (far away from metallic contacts).
• - Qt = quantum yield in the tangential case
• - Qs = quantum efficiency in the radial case

For other emission frequencies and materials of the emitter can the dimensions z. B. be optimized according to the previous formula.

For a receiver element is that caused by the antenna el. field enhancement significant. The corresponding increase the excitation rate can z. B. calculated according to formula 3.

It Already a metal antenna is sufficient to significantly increase the quantum efficiency to increase. Therefore, you can also do without one of the two antennas or this may consist of semiconductors. For example from transparent oxides and other semiconductors (ZnO, GaN, organic Semiconductor layers, etc.). Or it may be coated with semiconductors Insulate insulating particles exist (eg SiO2 core with any Semiconductors such as AlAs, ZnS, ZnO). However, the Emission can be significantly increased if the lumophore between two metal antenna particles lies [6], [7].

Other antenna types:

With other antenna geometries, the radiative decay rate of the emitter can be further optimized. A simple possible variant are elliptical or rod-shaped antennas:
For elongated antennas, the fluorescence gain relative to the non-radiative attenuation outweighs even at minimum distances of the lumophore to the antenna. Thus, the quantum yield of elliptical gold particles with a length to width ratio of 6 at a wavelength of 770 nm already reaches z. B. 3 nm distance their maximum [9].

It are length to width ratios of around 1.5 to 6 (and more) useful [9], [10].

This Aspect ratio must be for different Wavelengths z. B. by means of "finite-difference time-domain "(FDTD) method.

Overview of some possible antenna geometries - partly according to [9]: Wavelength [nm] approx. 480 Antenna material Ag Distance A of the antennas from one another or Z [nm] approx. Z = 10 Antenna length [nm] approx. 60 Antenna width [nm] approx. 10 840 Au A = 20 100 42 720 Au A = 20 122 38 630 Au A = 20 76 48 670 Au A = 15 40 35 770 Au Z = 3 60 10 > 900 Au A = 10 120 38

by virtue of its dielectric function is Ag for shorter Wavelengths better than Au suitable. It can as with the spherical antennas also different Antenna materials are used for both antennas as well as the antennas with z. B. dielectric and semiconductor layers be provided.

Spherical, rod-shaped, elliptical, pyramidal but also polygonal antenna shapes are possible. The antennas can be prepared by "bottom-up" methods such as wet-chemical methods (see also [11], [12], [13], [17]), gas-phase synthesis, chemical vapor condensation, etc. or by comminuting larger particles. Antennas with metal cores and dielectric or semiconductor cladding can also be produced in the same way (see, for example, [20]). The production of semiconductor layers on the metal Cores or a dielectric cladding of the antennas leads among other things to errors in the semiconductor layer due to deviating lattice constants and free surface states. To reduce the free surface states, a shell of bridging molecules can contribute. But it can be even better if, in addition, the semiconductor sheaths around the antennas consist of combinations of different types of semiconductor with an offset or larger band gap. For example, the n-type antenna envelope may be covered externally and internally with semiconductor layers having an upwardly-shifted bandgap, and the p-type antenna enclosures conversely may be combined with layers having a down-shifted bandgap.

The The invention will be described below with reference to exemplary embodiments and diagrams explained.

• • Gleiche oder gleich wirkende Elemente sind in den Figuren mit gleichen Bezugszeichen versehen. Die Zeichnungen sind nicht als maßstabsgerecht anzusehen. Einzelne Elemente (z. B. Molekülbrücken rel. zu Antennen) sind zur Verdeutlichung übertrieben groß dargestellt.
• • Bei verschiedenen Ausführungsvarianten werden transparente el. Leiter benötigt. Diese können z. B. aus der Gruppe der leitfähigen Oxide ausgewählt werden. Beispielweise (Indiumzinnoxid, Indiumzinkoxid, Zinkoxid, Indiumtitanoxid usw.). Alternativ können aber auch sehr dünne Metallschichten (z. B. 2 nm Ag, Al, Au usw.) als transparente Elektroden verwandt werden.
• • Die in den Ausführungsvarianten erwähnten anorganischen Halbleiter für Leiterbahnen, Halbleiterschichten um Antennen und für Lumophore in Form von Nanokristallen können grundsätzlich Element- und Verbindungshalbleiter sein. Die Verbindungshalbleiter können binär, ternär oder aus noch mehr Komponenten zusammengesetzt sein. So kommen Verbindungshalbleiter mit Elementen der Gruppen IV, III, V, II und VI in Frage. Selbst indirekte Halbleiter können aufgrund der Wirkung der Antennen als Lumophor verwendet werden.
• • Die anorganischen Halbleiterschichten in den 14 bis 22 und 27 bis 29 sind über ohmsche Kontakte mit metallischen Zuleitungen verbunden. Für nicht gepinnte Halbleiteroberflächen (ohne Oberflächenzustände) werden sie bei n-Halbleitern durch Metalle erzielt, deren Austrittsarbeit kleiner bzw. gleich groß der Elektronenaffinität des Halbleiters ist und umgekehrt für p-Halbleiter. Außerdem werden üblicherweise nicht einzelne Metalle, sondern Schichtsysteme verwendet, die u. a. gleichzeitig das Aufdotieren des Halbleitermaterials übernehmen oder z. B. als Diffusionsbarriere für Elemente wie Gold wirken. Die üblicherweise verwendeten Schichtsysteme sind z. B. für p-SiC Al und Al/Ti, für n-SiC Ni und Ni/Ti, bei n-GaAs Ni und Au/Ge-Au, bei n-GaN die Schichten Ti/Al/Ni/Au und so weiter. Bei den 14 bis 22 wird die Halbleiterschicht auf metallische Leiterbahnen aufgetragen, so dass die Schichten vor dem Beschichten der Halbleiterschichten aufgetragen werden müssen. Ähnliche Probleme, wie sie bei den Halbleiter-Metall-Kontakten existieren, entstehen auch an z. B. Heterokontakten zwischen einer Antenne, die mit einem bestimmten Halbleiter z. B. GaN beschichtet ist und einer Leiterbahn, die aus einem anderen Halbleiter z. B. Si, besteht. Wenn die SAM-Schicht an der Grenzfläche, z. B. die SAM, die Antennen und Leiterbahn verbindet, dünn (z. B. ca. 1 nm) und gleichzeitig el. isolierend ist, kann die Ladungsträgerverarmung im Kontakt verringert und damit der Kontakt verbessert werden.

General information about the figures shown:

• Equal or equivalent elements are given the same reference numbers in the figures. The drawings are not to be considered as true to scale. Individual elements (eg, molecular bridges relative to antennas) are exaggerated for clarity.
• • In various embodiments, transparent el. Conductors are required. These can be z. B. be selected from the group of conductive oxides. For example (indium tin oxide, indium zinc oxide, zinc oxide, indium titanium oxide, etc.). Alternatively, however, very thin metal layers (eg 2 nm Ag, Al, Au, etc.) can also be used as transparent electrodes.
• The inorganic semiconductors mentioned in the variants for printed conductors, semiconductor layers around antennas and for lumophore in the form of nanocrystals can basically be elemental and compound semiconductors. The compound semiconductors may be binary, ternary or composed of even more components. Thus, compound semiconductors come with elements of groups IV, III, V, II and VI in question. Even indirect semiconductors can be used as lumophore due to the effect of the antennas.
• • The inorganic semiconductor layers in the 14 to 22 and 27 to 29 are connected via ohmic contacts with metallic leads. For unpinned semiconductor surfaces (without surface states), in n-type semiconductors they are achieved by metals whose work function is less than or equal to the electron affinity of the semiconductor and vice versa for p-type semiconductors. In addition, usually not single metals, but layer systems are used, which, inter alia, at the same time take over the doping of the semiconductor material or z. B. act as a diffusion barrier for elements such as gold. The commonly used coating systems are z. For example, for p-SiC Al and Al / Ti, for n-SiC Ni and Ni / Ti, for n-GaAs Ni and Au / Ge-Au, for n-GaN the layers Ti / Al / Ni / Au and so on , Both 14 to 22 For example, the semiconductor layer is applied to metallic interconnects, so that the layers have to be applied before the semiconductor layers are coated. Similar problems, as they exist in the semiconductor-metal contacts, also arise at z. B. heterocontacts between an antenna that is connected to a particular semiconductor z. B. GaN is coated and a conductor, the z. Another semiconductor z. B. Si, consists. When the SAM layer at the interface, e.g. If, for example, the SAM, which connects the antennas and the interconnect, is thin (for example, about 1 nm) and at the same time is insulating, the charge carrier depletion in the contact can be reduced and thus the contact can be improved.

Overview of the pictures:

1 : Representation of the quantum yield of an emitter with an effective silver antenna as a function of the distance lumophore to antenna. Calculated according to [2] with C1 = alfa_eff / alfa.

2 : Representation of the quantum yield of an emitter with an effective silver antenna as a function of the wavelength. Calculated according to [2] with C1 = alfa_eff / alfa.

3 : Representation of the quantum yield of an emitter with an effective gold antenna as a function of the distance lumophore to the antenna. Calculated according to [4] or formula (3) ff.

4 : effective polarizability of a single metal antenna for determining the resonance frequency as a function of the refractive index of the dielectric. Calculated according to [3].

5 : individual antenna emitter or receiver in a first embodiment.

6 : single antenna emitter or receiver in a second embodiment.

7 : single antenna emitter or receiver in a third embodiment.

8th : individual antenna emitter or receiver in a fourth embodiment.

9 : individual antenna emitter or receiver in a fifth embodiment.

10 : individual antenna emitter or receiver in a sixth embodiment.

11 : single antenna emitter or receiver in a seventh embodiment.

12 : single antenna emitter or receiver in an eighth embodiment.

13 : optional reflector layer under the antenna elements to modify the emission or reception characteristics.

14 : basic structure of the surface emitter or receiver

15 Emitter or receiver consisting of a plurality of individual emitters / receivers in a first embodiment.

16 Emitter or receiver consisting of a plurality of individual emitters / receivers in a second embodiment.

17 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a third embodiment.

18 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a fourth embodiment.

19 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a fifth embodiment.

20 : Emitter and receiver in a sixth example combined as optocouplers.

21 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a seventh embodiment.

22 : Emitter or receiver consisting of a plurality of individual emitters / receivers in an eighth embodiment.

23 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a ninth embodiment.

24 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a tenth embodiment.

25 : Emitter or receiver consisting of a plurality of individual emitters / receivers in an eleventh embodiment.

26 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a twelfth embodiment.

27 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a thirteenth embodiment.

28 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a fourteenth embodiment.

29 : Emitter or receiver consisting of a plurality of individual emitters / receivers in a fifteenth embodiment.

Detailed description of the figures:

1 outlines the dependence of the quantum efficiency of an emitter with a single effective silver antenna as a function of the distance of the lumophore to the surface of the metal core. The representation was calculated according to [2], but with C1 = alfa_eff / alfa. The lumophore has an intrinsic quantum yield of 10%. The diameters of the metal cores of the antenna particles are 40 to 100 nm, with the wavelength of the emitter being 480 to 600 nm. The antenna is wrapped in a dielectric with an effective refractive index of 1.6. This results z. B. from a combination of a SiO 2 layer with a semiconductor layer thereon. It is particularly evident that there are certain optimal distances for optimal quantum yields.

2 shows the quantum efficiency of an emitter with an effective silver antenna as a function of the wavelength. Calculated again according to [2] with C1 = alfa_eff / alfa. The antenna core is wrapped in a dielectric with n = 1.5 and the dipole of the lumophore is perpendicular to the antenna. The intrinsic quantum efficiency of the lumophore is 1% and is 8 nm from the surface of the metal core with diameters of 10 to 80 nm.

In 3 shows the quantum efficiency of an emitter with an effective gold antenna as a function of the distance from lumophore to the antenna core. The antenna is located in the dielectric air. The lumophore has an intrinsic quantum yield of 30% at a wavelength of 600 nm. The figure was calculated according to [4] or formula (3) ff. Also sketched is the effect in the case of two effective metal nuclei: the quantum yield reaches its maximum even for smaller ones Distances from the antenna core. A similar effect results from the use of elongate antennas.

4 indicates the effective polarizability of a single silver antenna to determine the resonant frequency as a function of the refractive index of the dielectric. Calculated according to [3] or formula 1. Shown are some antenna diameters from 40 to 100 nm at two resonance frequencies 350 and 550 nm. Somewhat in the red of these resonance frequencies lies the optimal antenna gain. With an identical antenna core, this frequency shifts to red with increasing refractive index of the surrounding dielectric. Conversely, if the excitation frequency remains the same, then the effective polarizability and thus also the amplifying effect of the antenna can be modified by the refractive index of the dielectric.

• • Lithographische Erzeugung der Antennen, die an el. Zuleitungen gekoppelt sind Darstellung siehe 19) und anschließend dann Herstellung der el. Verbindung dieser Antennen über Lumophore, die z. B. in Form von kolloidalen Halbleiter-Partikeln oder Halbleitermolekülen vorliegen. Dazu kann z. B. ein Tropfen mit in einem Lösungsmittel gelösten Lumophoren auf die Antennen aufgetragen und verdunstet werden. Die Moleküle können sich dabei richtig gepolt an den Antennen mit z. B. verschiedener Oberfläche verankern.
• • Erzeugen der separaten Antennenpartikel und Lumophore z. B. durch chemische Synthese. Anschließend entweder Fertigung von kompletten Antennen, die z. B. aus einem einzelnen Antennenpartikel und angekoppelten Lumophoren bestehen. Die Lumophore und Antennenpartikel können hierbei durch molekulare Brücken miteinander verbunden werden. Es werden dazu z. B. Antennenpartikel in eine Lösung mit den Lumophoren gegeben, die sich dann selbsttätig auf den Antennen verankern. Oder es werden die Antennenpartikel und Lumophore erst bei der Herstellung des z. B. Emitters auf den Leiterbahnen vereint. Das kann wieder durch die Brückenmoleküle selbsttätig ablaufen oder die Partikel können z. B. mittels Sedimentation aus einer Lösung aufeinander und den Leiterbahnen abgeschieden werden.

The following 5 to 12 and 19 schematically represent examples of the individual light sources or voltage sources according to the invention, the antennas A. Their production basically takes place in two different ways:

• • Lithographic generation of the antennas, which are coupled to el. Supply lines. See illustration 19 ) and then then producing the el. connection of these antennas via lumophore, the z. B. in the form of colloidal semiconductor particles or semiconductor molecules. This can z. For example, a drop of dissolved in a solvent lumophores are applied to the antennas and evaporated. The molecules can be properly polarized at the antennas with z. B. different surface anchor.
• • Generate the separate antenna particles and Lumophore z. B. by chemical synthesis. Then either production of complete antennas, the z. B. consist of a single antenna particle and coupled lumophore. The lumophore and antenna particles can be connected by molecular bridges. There are z. B. Antenna particles placed in a solution with the lumophores, which then anchor themselves on the antennas. Or it will be the antenna particles and Lumophore only in the production of z. B. emitters united on the tracks. This can happen again automatically by the bridge molecules or the particles can, for. B. by sedimentation from a solution to each other and the interconnects are deposited.

In the 5 is a first example of an antenna element A, which can be used as an emitter as well as a receiver (voltage source, photovoltaic element ...) is shown. For simplification for other embodiments, the entire antenna element is that of the functional elements 1 . 2 and 3 exists, denoted by A.

It consists in this variant among other things of a particle 1 with a molecule shell 102 and the core 101 , The core 101 may consist of a solid metal particle or even a metal shell around a dielectric core. In case it consists of a thin metal shell around a dielectric core, rel. to a massive core z. B. the resonance frequency are shifted more to the red. The core 101 As drawn, it can have a spherical shape or any other shape. The core may also be covered with additional surface modification layers (not shown). This surface modification layer may consist of thin inorganic layers (eg metals, C, Si, SiO 2, semiconductors ...) or of an organic SAM shell. As a result, z. B. the connection of the bridge molecules 102 with their anchor groups 102A only done on this antenna, even if the antenna core 101 from the same material as 301 consists. Or it can be changed by the coating, the work function of the antenna particle. This surface modification layer is either electrically conductive or very thin (up to about 1 nm), so that it can be tunneled through. The bridge molecules 102 can z. B. by a ligand exchange on a colloidal particle 101 have been applied, wherein the particle stabilizing ligands have been partially or completely replaced. The bridge molecules 102 So do not have to like the particle core 101 completely encase, but there may also be other molecules present, the z. Eg no anchor group 102B for Lumophore. The core can, for. B. of a metal such as Ag, Au, Al, Cu or even of semiconductors (eg ZnO, In2O3) or conductive ceramics (eg TiN, Boride LaB6 etc.) exist. Only in the case that a metallic nucleus is used, does this surface plasmons support the effect of the lumophore 2 can amplify. The bridge molecules 102 can ensure the distances Z to the lumophore and with their anchor groups 102B the antenna particle 1 also on a base (eg trace or lumophore 2 ) immobilize and electrically conductively connect. The bridge molecules 102 may be doped or undoped, as well as organic or inorganic. The bridge molecules can thus z. B. consist of doped π-conjugated hydrocarbons. The bridge molecules are preferably n-doped in the majority of the lumophore on the antenna particle, which is also coupled to the n-doped conductor or they are p-doped on the second antenna particle, which abuts the p-doped conductor. The HOMO (the highest occupied orbital) or LUMO (the lowest unoccupied orbital) of the bridge molecules can be adapted to the lumophore. That is, semiconductor molecules can be used for the bridging molecules that have conduction and valence bands matched to the lumophore, respectively, to achieve small electrical resistances. Depending on the version of the Lumophors 2 another case may be advantageous. For example, by a corresponding n-doping of the molecule 102 the injection of electrons into the LUMO of a Lumophors be made possible. A p-doped molecule 302 could simultaneously transport a hole in the lumophore.

The lumophore 2 here is also with a ligand shell 202 him with the anchor groups 102B such as 302B connects, drawn. But this does not necessarily have to be this way. For example, an anchor group 102B also directly with the surface of the lumophore 2 connect. Or it can be the ligands 202 of the lumophore by a ligand exchange also directly to the surface of the particles 1 and 3 tie. Lumophores consisting of molecules (eg molecular diodes or organic semiconductor molecules) also do not require or possess a ligand shell. The molecules 202 may also be doped. Its task (light emission under current flow or light absorption under voltage generation) can be the lumophore 2 alone or in combination with the bridge molecules 102 and 302 (eg in a charge transfer complex). It can - in contrast to the drawing - also several Lumophore be connected to the antennas, the entire particle 1 or 3 can z. B. be completely enveloped with lumophores. The Lumophore z. B. be differently doped. Furthermore, the function of the lumophore 2 also completely from z. B. semiconducting bridge molecules are taken over which the antennas 1 and 3 connect directly - the lumophore 2 So it can be omitted. Certain lumophores (eg semiconductor molecules - but not eg semiconducting nanocrystals as emitters), which are bound to the antenna particles with anchor groups, are perpendicular to the antennas with their radiating dipole. This guarantees a maximum increase in the quantum yield. In addition, by fixing the lumophore at the same time its radiating dipole is fixed. As a result, the antenna generates or absorbs light only with the corresponding polarization.

An example of the operation of an antenna receiver A is z. For example:
When irradiated with light in the region of the resonance wavelength of the antenna A and the band gap of the lumophore 2 be in the antenna cores 101 and 301 Induced plasmon oscillations. These cause a reinforcement of the el. Field, which acts on the lumophore. In the Lumophore an electron is excited by the HOMO into the LUMO of the Lumophors. This electron can then enter the deeper LUMO of the bridge molecule 302 and finally to the even lower level in the antenna core 301 switch. The antenna core 301 could be z. B. of Al or Ag or be coated with an n-type semiconductor. At the same time, the resulting hole from the HOMO of the lumophore can pass through the higher HOMO of the bridging molecule 102 in the antenna core 101 reach. The core 101 could z. B. be made of Au or covered with a p-type semiconductor. The antennas 1 respectively. 3 In turn, they are again bound to printed conductors (not shown), via which the circuit can be closed. This process can run just the reverse for an antenna emitter.

• • unterschiedliche Metalle des Kerns (z. B. 101 = Ag, 301 = Au oder 101 = Al, 301 = Au usw.)
• • entsprechende Beschichtungen der Antennenpartikel mit Materialien welche die geeignete Austrittsarbeit für eine möglichst ohmsche Anbindung der Brückenmoleküle besitzen (z. B. 101 ist Al beschichtet, 301 ist mit Au beschichtet, 101 besteht aus Ag, 301 ist p-ZnO beschichtet usw.) oder
• • durch Verwendung eines Metallkerns 101 in Verbindung mit einem massiven anorganischen Halbleiterpartikel 301 (z. B. In2O3, ZnO, GaN, TiO2, SiC usw.).

To generate a potential difference between the antennas or an ohmic connection of the bridge molecules, the work function of the antenna particles 1 and 3 be adjusted by:

• • different metals of the core (eg 101 = Ag, 301 = Au or 101 = Al, 301 = Au, etc.)
• Corresponding coatings of the antenna particles with materials which have the appropriate work function for a connection of the bridge molecules which is as non-ohmic as possible (eg. 101 Al is coated, 301 is coated with Au, 101 consists of Ag, 301 p-ZnO is coated, etc.) or
• • by using a metal core 101 in conjunction with a massive inorganic semiconductor particle 301 (eg, In 2 O 3, ZnO, GaN, TiO 2, SiC, etc.).

at Coating with metals (eg Ag on Au) naturally affects this also on the surface plasmon resonance, because itself Surface plasmons only up to a few nm below the surface extend.

The antenna particle 3 with his core 301 and the shell 302 essentially corresponds to the particle 1 , However, as mentioned, different materials and coatings than with particles 1 be advantageous to guarantee the overall function of the antenna A. Because a second antenna particle is used, it is possible to further increase the quantum efficiency or the el. Field amplification.

6 shows a similar antenna emitter or receiver A as 5 , The main difference is that the second antenna particle was completely omitted. The el. Current therefore flows over the particle 1 , the lumophore 2 and a contact 4 , In this contact 4 is it z. As an organic semiconductor, which can be coated on the antenna with the lumophore. For this purpose, to avoid "short circuits" with the antenna several layers of lumophors on the antenna 1 be applied (not shown). Alternatively, the contact 4 also be a second trace. As in 5 can the bridge molecules 102 and the contact 4 of doped semiconductors to make the injection of electrons and holes into the lumophore. The antenna core 101 can again consist of a material with different work function as the contact 4 or the electrode (not shown) connected to contact 4 adjoins, owns. For example, the core 101 made of silver, the molecules 102 can be n-doped at the same time and adapted with their LUMO to the antenna or not shown trace. The contact 4 can then be a hole conductor adjacent to ITO. A reverse variant can z. B. from a gold antenna 101 with p-doped molecules 102 and an n-doped contact 4 consist. The particle 101 can also be like in 5 be provided with additional layers (for purpose see description of 5 ). The bridge molecules 102 Here, too, ensure compliance with the distance Z, which is decisive for the maximum quantum efficiency.

In 7 a third variant of antenna emitters or receivers is shown. The entire element is again denoted by A. It consists of a particle 1 , the lumophore 2 as well as the particle 3 , Both antenna particles 1 and 3 have massive or cupped cores 101 and 301 , which are preferably made of metals such as Ag, Al, Au, Cu with a suitable dielectric function to achieve a plasmon resonance in the intended wavelength range. The cores do not have to be spherical as drawn. But it can also z. B. rod-shaped or oval shapes can be used. The antenna cores can also be made of different metals. The particles 1 respectively. 3 can also complete against lumophore presentation 2 be wrapped, in which case z. B. only some are traversed by electricity. Different lumophores (eg n- and p-doped nanocrystals) can also be used mixed.

The cores are surrounded by dielectric layers 103 and 303 , These consist of dielectrics with a suitable refractive index and thickness. The dielectrics may, for. Example of oxides such as SiO2, Al2O3, MgO, TiO2, V2O3, HfO2, ZrO2, etc., fluorides such as MgF2, SrF3, KF, etc., nitrides and semiconductors exist. They should preferably be transparent in the desired wavelength range. The dielectric layers of both particles 1 and 3 can be different from each other. The tasks of the dielectric layers include: Together with the other layers surrounding the particles (semiconductor layers 104 and 304 , Molecular envelopes 102 and 302 , Conductor tracks in the luminous means, etc.) they create for the antenna cores a dielectric environment with an effective dielectric constant, which allows an antenna resonance in the desired wavelength range. In addition, they can function as a lattice matching layer between the cores and the inorganic semiconductor layers. And together with the other layers they set the required distance Z of the Lumophors 2 to the antenna core. After the required dielectric constant z. B. with the formulas 1 or the method of [1] was determined, depending on the semiconductor layers 104 and 304 z. B. by means of the effective medium theory, a required thickness and refractive index of the dielectric layer can be determined and optimized, wherein the radially decreasing electric field strength to take into account. The thicknesses of the dielectric layers are then at a few nm to a few 10 nm. In this way, it is z. B. possible that antenna resonances in the blue spectral range despite high refractive index semiconductor layers 104 and 304 be achieved. Or it can the antenna resonance by means of high refractive indices of the dielectric layers z. B. be moved to the infrared.

On the dielectric layers are the semiconducting layers 104 and 304 , These semiconductive layers can both consist of heterogeneous or similar inorganic or organic half-ethers. In the case that these are organic semiconductor molecules, these z. B. consist of a SAM or semiconducting mono- or multilayers, which can also take over the function of the bridge molecules at the same time. Or they consist of single or multiple layers of inorganic element or compound semiconductors such as Si, SiC, ZnO, GaP, AlP, GaN, InN, ZnS, MgS, etc. They have the task of enabling the electrical connection of the Lumophors with the tracks. Optionally, the band gaps of the semiconductor layers 104 respectively. 304 greater than the band gaps or HOMO-LUMO distances of the Lumophore 2 be selected, wherein further semiconductor cladding layers with offset band gaps as a cladding for the semiconductor layers 104 / 304 can serve. N-doped semiconductor layers can be used to inject electrons and p-doped layers to inject holes in the lumophore. The semiconductor layers should be as transparent as possible in the targeted frequency range and they can rel. be highly doped to reduce the width of the space charge zone at the surface. The lattice constants of the inorganic semiconductor layers should match as closely as possible with the underlying layers.

The semiconductor layers, in turn, may be covered by surface modification layers (not shown) that perform the same task as in FIG 5 fulfill. In addition, by this surface modification layer, the free surface states of the semiconductor layers 104 / 304 be reduced. These optional layers can eventually interact with the bridging molecules 102 and 302 be covered. These molecules basically correspond to those in 5 , However, their length is correspondingly shorter due to the underlying layers than in 5 to keep the same distances Z. If the particles are to be deposited only loosely on each other in the later emitter or photovoltaic element, then the bridge molecules 102 . 202 and 302 omitted. The dielectric and semiconductive layers are then to be made correspondingly thicker for an equal dimension Z.

Between the antenna particles 1 and 3 There are one or more Lumophore 2 which can have a molecular shell with anchor groups for the surfaces of the antenna particles.

One possible functional sequence is:
Via an n-doped conductor track (not shown), the z. B. from the same semiconductor material as an electron-conducting layer 104 electrons flow into the semiconducting shell of the particle 1 and from there to the LUMO of Lumophors 2 , Conversely, holes simultaneously reach via a p-doped conductor track (not shown) and the p-conducting conductor layer 304 the HOMO of the Lumophors. Instead of z. B. to recombine without radiation, surface plasmons are excited in the antennas by the charge shift in the lumophore, which then radiant decay.

The antenna element A in 8th is analogous to that in 7 built up. However, again, an effective antenna has been dispensed with. A thus consists of the particle 1 with metal core 101 and the corresponding cases as in 7 , as well as from the at least one lumophore 2 and a contact 4 , Analogous to 6 can the contact 4 z. B. from a Lumophore coated semiconductor layer (not shown), a solid semiconductor particles without metal core or from a conductor (not shown), which binds to the lumophore. The lumophore 2 may again be covered with organic sheaths that may be doped and anchor groups for the surface of the antenna 1 can own. One possible functional sequence is:
By incident light in the antenna core 101 Surface plasmons excited. The resulting EM field lifts electrons in the lumophores 2 from valence to conduction bands. These electrons can pass through the n-doped semiconductor, which is either the layer 104 or the contact 4 may be, in the adjacent trace (not shown) arrive. At the same time, the holes from the valence band of the lumophore can contact via the p-doped semiconductor, the reverse 4 or the layer 104 may be, in the second trace (not shown) arrive. The circuit can be closed via an external load. The antenna core 101 It acts like a macroscopic mirror, whereby a large part of the incident light on the lumophore 2 is concentrated.

9 represents a variation of the antenna emitter or receiver 7 dar. The entire An element of the antenna, which is again denoted by A, is in contrast to 7 from antenna cores 101 and 301 that directly with semiconductor layers 104 and 304 (e.g., CdSe, GaN, ZnO, etc.). The additional dielectric layers are missing. When using semiconductor layers 104 respectively. 304 From n- or p-doped inorganic semiconductors, the antenna resonances are usually in the long-wave red to infrared range due to the high dielectric constants of the semiconductor layers. The particles 1 . 2 and 3 can again with molecular layers as in the previous embodiments 102 . 202 and 302 be covered. These molecular layers can independently connect the particles by means of special anchor groups or immobilize the particles on conductor tracks. The distances Z required for the optimum quantum yield are determined by the thicknesses of the layers 104 respectively. 304 and the length of the optional molecular bridges 102 . 202 and 302 respected.

In 10 an embodiment of an antenna element A is shown, which manages without metallic antenna cores. Compliance with the distance Z is therefore no longer necessary. The complete antenna element A consists of a particle 1 with a semiconductor core 104 and optional molecular shell 102 , Furthermore, it consists of the lumophore 2 , which is also an optional molecular shell 202 has. And finally it consists of a particle 3 with semiconductor core 304 and molecular shell 302 , The optional molecular sheaths again fulfill the task of independently linking the particles to one another and to printed conductors. The particle cores 104 and 304 consist of any inorganic semiconductors and are doped differently. For example, can 104 consisting of an n-doped semiconductor (eg, n-GaP, n-GaAs, n-Si, n-ZnS, etc.) and 304 of a p-doped semiconductor (eg, p-AlP, p-AlSb, p-InGaAs p-ZnS, etc.). The lumophore 2 here can have a very high intrinsic quantum efficiency, which does not require antenna amplification. Even without metal antennas, the advantages still remain: the emitted radiation can reach the environment without total reflection and the emitters or receivers A can produce light polarized with molecular lumophores or selectively absorb a polarization direction.

A functional sequence could be here: electrons enter the n-doped core from an n-doped interconnect 104 that has a larger band gap than Lumophore 2 can own. From there they get into the conduction band or the LUMO of the Lumophors 2 where they radiantly recombine with the holes, simultaneously from a p-doped trace over the p-doped core 304 into the HOMO or the valence band of the Lumophors.

11 represents the corresponding antenna element A as 10 However, the lumophore has been dispensed with and there is only a np transition through the oppositely doped semiconductor particles 104 and 304 ,

12 Finally, represents a final embodiment of an antenna emitter or receiver A. Here, the metallic antenna cores exist 101 and 301 from elongated particles. The variant in 12 is analogous to the embodiment in 5 shown. However, elongated, rod-shaped, polygonal and other particle shapes can also be used with all other embodiments. Elongated antennas allow higher quantum yields and antenna gains than spherical antennas, but at longer wavelengths. Even with elongated antennas, the distances Z can be maintained by dielectric and semiconductor layers on the metal cores and by bridge molecules.

In 13 the principal function of the optional metallic reflector layer under the antenna elements A is shown. All variants may require a radiation or reception characteristic that radiates the light focused in certain spatial directions and catches it. Lumophore, whose radiant dipole rel. fixed to the antenna, together with the antenna particles can form dipole antennas. Under the dipole antennas, a metallic (eg, Al, Ag, Au, etc.) reflector layer R can be attached. It comes to the superposition of the waves with the Spiegeldipol and the dipole omnidirectional is a radiator, which emits only in a half-plane. For emitters, it is necessary for the radiating dipole to be fixed relative to the antenna cores. This can be achieved by the attachment of molecular lumophores (for example of the donor-acceptor type) on the antennas by molecular bridges. The antenna element A lies at a distance d above the metallic reflector layer R. A is separated from R by a dielectric D with the refractive index n. About the antenna A, the dielectric D2 lies with the refractive index n2. The entire emitter is surrounded by air 13_3 with the refractive index 1 , The emitter emits light with the wavelength λ0 in air. This results in the dielectric D, a wavelength λ = λ0 / n. 13_1 now roughly sketch the antenna lobe for d / λ = 0.125. 13_2 shows the radiation for d / λ = 0.35 and 13_4 indicates the radiation characteristic for d / λ = 0.25. The antenna element A is shown in the current flow direction.

The following 14 to 29 All represent examples of devices in which the antennas Elements A from the 5 to 12 are installed. These devices can be used as emitters (eg light sources, displays) and receivers (eg sensors, image sensors, photovoltaic elements, etc.). To produce colored light or to absorb only one wavelength, Lumophore or antennas A can be used, which operate only at this wavelength. Alternatively, Lumophore or antennas A can be mixed for different wavelengths to z. B. to produce white light. The antennas and lumophore may be ordered or randomly mounted to selectively or unselectively z. B. light to absorb a polarization direction. For applications in which individual areas have to be controlled (eg displays, image sensors), the interconnects and conductor layers must be split for individual pixels. It is also possible that the emitter or receiver in the 14 to 20 contain selectively driven antennas, each emitting or receiving different wavelengths. This can z. B. in conjunction with a light guide data transmission devices with a very high number of channels are produced inexpensively. For other applications, for. B. all the same tracks are connected in parallel and connected to an external power supply or load.

14 represents in a three-dimensional view and an associated front view of the basic structure of the emitter or receiver elements, in which the antennas A are located with the lumophore on the surface. For this purpose, the devices require electrical leads, which are integrated in the substrate and which can be produced by means of the usual in semiconductor electronics method. The antennas A are in el. Contact with the tracks L1 and L2. These consist of inorganic semiconductors (polycrystalline, amorphous or monocrystalline element and compound semiconductors (III-V, II-VI, III-VI semiconductors etc .: for example ZnO, GaN, SiC, InP, GaP, GaAs, Si , Ge, AlGaAs, transparent oxides) or even metallic layers (such as Al, Au, TiN, LaB6, etc., if the antennas are covered with sufficiently thick dielectric layers.) The tracks L1 and L2 may be like the surfaces For example, in order to produce selectivity for SAM layers, for example, the interconnects L1 may be n-doped and the interconnects L2 may be p-doped and made of the same or different semiconductors The conductor tracks L1 and L2, which are eg n- or p-doped, are in contact with the metal leads L1_Z and L2_Z Procedure an ohm shear contact generated. For this purpose, on the one hand, semiconductor layers and metal layers of suitable Fermi energy are combined and, on the other hand, the doping of the semiconductors is chosen to be sufficiently high. The doping of the conductor layers L1 and L2 can, for. B. by coating the conductors L1_Z and L2_Z with additional dopants (eg, for Si for n-doping P and for p-doping Al) containing layers are achieved, which diffuse in the connection by a heat treatment in the interconnects L1 and L2 can. The leads L1_Z and L2_Z consist in this figure of two conductor layers, which are connected by webs ("vias") with the tracks L1 and L2. But it can also be used any other designs and modifications. The conductor layers L1_Z and L2_Z are preferably made of metals and semi-metals with good el. Conductivity such. As Al, Ag, Cu, Au, W, but also of ceramic layers such as TiN. The layers can be coated on a Sub substrate. The substrate may consist of semiconductors (eg Si, GaAs ..), insulators such as (glasses, ceramics, plastics) or metals. The electrically conductive layers are separated from one another by insulation layers D. These consist z. B. from z. For example, oxide layers (eg, SiO 2, Al 2 O 3, glasses) or other ceramic layers (eg, Si 3 N 4). Other layers z. Barrier layers (eg SiN), contact and adhesion layers (eg TiW), diffusion barrier layers (eg TiN), etch stop layers (eg SiC) are advantageous but not shown. The layers can be produced by conventional lithography and coating methods (CVD, MOCVD, PVD, various epitaxy methods, etc.).

The Production can be carried out either by first the conductor tracks L1_Z / L2_Z and insulating layers D coated on a single crystal semiconductor substrate which is subsequently turned and on z. B. metal or glass substrate is bonded. The semiconductors L1 and L2 can then be removed by etching the top one Semiconductor substrate can be generated. Alternatively, you can a substrate first, the conductor layers L1_Z / L2_Z and last the conductor tracks L1 and L2 are coated. The morphology of Conductor tracks can then be polycrystalline.

15 represents a section of a light source or a voltage source, which uses a plurality of antenna elements A, wherein the antennas A are embodiments with an active antenna (see also 6 and 8th ). The conductor tracks L1, the z. B. of n-doped inorganic semiconductors are connected via an ohmic contact with the metallic conductor layer L1_Z. Accordingly, the interconnects L2, z. B. of p-doped inorganic semiconductors, connected to the conductor layer L2_Z. The conductor layers L1_Z and L2_Z can be connected to an external voltage source or a consumer. The conductor layers are formed by dielectric layers D of z. B. SiO2 isolated from each other.

The tracks L1 have a specific surface area 1 , on which selectively a SAM S1 can be generated, which is fixed with its anchor groups on the conductor L1. The functional groups of these molecules may be specifically designed so that the lumophore can couple properly polarized on them. Accordingly, it is optionally possible to immobilize L2 lumophors in the correct polarity on the printed conductors. To avoid direct contact of the antenna with the tracks, several layers of lumophores can be applied. In order to prevent lumophore or antennae from being able to anchor at unintended locations, such as the tops of the printed conductors, these surfaces can be provided with an additional layer 15_1 be covered. This layer has a surface which does not allow the anchoring groups of the bridging molecules to be blocked. You can z. Example of SiO2, Si3N4 or photoresist. The antennas A can finally be immobilized on the lumophores. For this purpose, the Lumophore z. B. anchor groups for the surface of the antennas or vice versa. By z. B. capillary forces during evaporation of the solvent in which the antenna particles are located, can form dense chains of the antennas A on the tracks.

Of the finished emitter is through a transparent dielectric D2, the z. B. was applied by spin coating and made of plastics or glasses can exist before environmental influences protected.

In 16 Figure 4 is a cross-sectional view of a portion of a surface emitter or receiver, each employing two antenna particles combined with lumophores. The substrate structure is identical to the design in 15 with the difference that the structure size (eg trace distances) can be about twice as large. The upper conductor layer L1_Z simultaneously acts as a reflector layer R. By varying the distance d, the emission characteristic can be changed. The conductor layers L1 and L2, as well as the layer 15_1 again correspond to those in 15 ,

On conductor L1 is z. B. a SAM S1 with anchor groups for the trace 1 generated. If the interconnects L1 and L2 are made of the same material, or have the same surface property for the SAM, so a trace z. B. be covered with photoresist. The first antenna particles can then be immobilized on the Sam S1. It may be a dense chain of antenna particles on the conductor L1 z. B. form by capillary forces during evaporation of the solvent. Finally, the lumophores can be deposited with their anchor groups for the surface of the antenna particle properly poled on the first antenna particle. And finally, the second antenna particle is immobilized by the SAM S2 on the conductor L2. By choosing a path distance between L1 and L2 slightly smaller than twice the antenna diameter, an el. Contact between the particles is ensured. Alternatively, the antenna A can also be completely prefabricated as a dimer and can be immobilized correctly poled on SAM layers S1 and S2. A transparent layer D2 covered as in 15 again to protect the finished element.

17 shows a part of a cross section through another variant of a emitter or receiver with a single active antenna. The substrate Sub with the conductor layers L1_Z, L2_Z and the insulating dielectric D corresponds to that of the preceding figures. The interconnects L1 and L2, which again z. B. of doped semiconductors are arranged offset in height and from each other by a dielectric D isolated. The interconnects L2, which are connected via an ohmic contact with L2_Z, are lower than the interconnects L1. This forms a "tub" in which one or more layers of lumophores can be deposited properly poled by sedimentation or immobilization on SAM layers S2. The antennas A can be conductively connected by molecular anchor groups to the SAM layers S1 and the interconnects L1 and simultaneously to the lumophores el. Alternatively, the antenna particles can also be deposited by sedimentation on the lumophores so that they cover the entire surface of the "tub". The top of the tracks L1 is again with a layer 15_1 covered, which prevents immobilization of particles at this point. The transparent protective layer D2 covers the antennas and conductor tracks, as in the preceding embodiment variants.

18 again shows a part of an emitter or receiver, which consists of two antenna particles. The substrate Sub, the conductor layers L1_Z and L2_Z, and the dielectric or insulating layers D and D2 correspond to those in the previous embodiment variants.

The interconnects are again constructed as in the previous embodiments and at its top with a layer 15_1 covered, the z. B. of photoresist, SiO2 or any material on which the SAM layers S1 and S2 can not adhere. The SAM layer S1 can thus form only on the sides of the interconnects L1 and the SAM S2 on the sides of the interconnects L2. The antenna particles, which can have a different surface, can therefore only be connected to the corresponding one Attach tracks. However, the interconnects L1 and L2 have spacings B which, as well as the diameters of the antennas, may vary over a wider range due to manufacturing tolerances. Nevertheless, the lumophors, which are only able to bridge a very small tolerance range, can produce an electrical contact between the antenna particles. These can z. B. Lumophore with two anchor groups, one of which anchor group is protected by protective groups are deposited with the other anchor group on an antenna. After deprotection of the protective groups, the second anchor group of the attached lumophore is ready. As a result, z. B. further Lumophore be docked to the first, already attached lumophore. This process can be repeated until the gap between the antennas is filled.

In 19 is a part of a cross section through a further variant of an antenna emitter or receiver containing a plurality of antennas A shown. While the basic structure of substrate Sub, conductor layers L1_Z and L2_Z, conductor tracks L1 and L2 and the insulation layers D and D2 of this embodiment coincides with that of the preceding variants, the type or manufacturing method of the antennas A is different:
In contrast to the previous embodiments, here are the particles 1 and 3 produced by a lithographic process. The particles 1 and 3 , which are shown in cross-section, any z. B. have rod-shaped, oval or triangular tops. It can thus z. B. bow-tie antennas are made. Their length is in the range of 100 nm and can therefore be controlled by means of more recent lithographic processes. Their distances, however, are in the range of z. From a few nm to 10 nm. These small distances can nevertheless be produced by conventional methods. One possible way is this: the antennas can 1 and 3 z. B. are deposited as metallic layers on a (100) Si wafer (eg., Layer by particle 1 Al, layer by particle 3 = Au). On the antenna layers, the conductor tracks L1, L2, and the conductor layers L1_Z and L2_Z can be generated with the insulation layers D over a plurality of coating and etching steps, wherein the structure sizes z. B. in the 100 nm range. After turning and bonding on a z. B. Glass substrate can be the generation of the gap between the particles 1 and 3 to get prepared. For this purpose, by means of an anisotropic KOH etching process in the (100) Si wafer wedge-shaped etching pits 19_1 be generated with a wedge angle of 54.7 °. Only masks with a structure size are needed that is considerably larger than the later gap between the antennas. The Si wafers can already be done by z. B. isotropic etching have been sufficiently removed. After the surface of the antenna layers has been exposed in the desired width, the separation column z. B. by etching the metal layer of the antennas 1 and 3 be generated, wherein the Si layer 19_1 is used as a mask. The required distances of the lumophore from the antennas can then z. B. be enforced by coating with semiconductor or SAM layers on the antennas. Finally, the gap between the antennas can be bridged by filling with lumophores or attaching lumophores with molecular anchor groups as in the previous embodiments. Or it can z. B. be generated by a MOCVD method semiconductor quantum dots in the gap. The antennas are then electrically connected via the lumophore.

20 represents a section of a z. B. microchips in plan view. It shows the interconnects L1_1 with the SAM layer S1_1, and the interconnect L2_1 with the SAM layer S2_1. Opposite lie the interconnects L1_2 with the SAM layer S1_2 and the interconnect L2_2 with the SAM layer S2_2. Antenna elements A_1 and A_2 can now be immobilized on the interconnects, wherein masks and z. B. layers 15_1 can be used as an aid, so that the antennas can attach only in the designated areas. The antenna element A_1 can be excited by current flow for emitting light. The antenna element A_2 can in turn generate an electric voltage by this light or by the direct electric field of the antenna A_1. This makes it possible to realize an optocoupler. The structure of the antennas A_1 and A_2 can of course also as in the other variants of 14 to 19 be executed.

In 21 is shown a last variant of an emitter or a voltage source, in which the antennas are located on the surface. The tracks are again z. B. from n- or p-doped inorganic semiconductor layers of elemental or compound semiconductors. 21_1 Figure 4 shows a substrate (eg, single crystalline semiconductor material, sapphire, glass, etc.) alternately formed with p-doped, insulating, and n-doped layers, e.g. B. was coated by epitaxy or CVD. In the picture 21_2 The substrate was sliced and polished in the picture 21_3 the insulation layer was etched. In step 21_4 For example, the p-doped tracks were selectively clad with insulating z. B. SAM layers covered, so that in the next operation (not shown), the n-doped conductor tracks can be connected via a non-reactive contact with the el. Supply lines. The corresponding can be done on the other substrate side for the second conductor layers. image 21_5 shows a finished element of conductors and insulator layers which are connected to their el. contacts are connected. In the last picture 21_6 Finally, the antennas were immobilized by means of el. Conductive bridge molecules to the conductor layers. The layer thicknesses of the insulator layers are just large enough to force contact of the antenna particles, with one or both antennas being covered with lumophores. A transparent encapsulation of z. As diffusion-tight plastics or glasses, the element can again protect against damage (not shown).

The following 22 to 26 represent embodiments in which the antennas are contacted by organic semiconductor layers. In each case, cross sections through emitter or photovoltaic elements are sketched. The figures each represent only one possible design of many variants. For example, further layers can be added or instead of a transparent anode, a transparent cathode can be used. The layer 22_1 could also z. B. between the ETL layer and the antenna are located. Essentially, however, all variants consist of antennas which are contacted on at least one side with organic semiconductors. The preparation of the organic layers and the application of the antennas may, for. B. by spin coating. By the el. Contacting the cathodes and anodes, which is not shown in any figure, the devices can be operated.

In 22 luminescence or voltage sources from individual antennas A are used, which are covered with lumophores (see also 6 and 8th ). The Lumophores were fixed in a previous operation by means of molecular anchor groups on the antennas. The antennas A are optimized in terms of the targeted wavelength with regard to their material, their dimensions, their sheaths and the emission or absorption frequency of the lumophore. It can therefore prefabricated antennas A with different emission or absorption frequencies and z. B. combined in an emitter to produce white light.

The individual antennas A can therefore in this invention Emitter different sizes, materials, Lumophore etc. have. The lumophore can z. B. off Semiconductor nanocrystals exist. A possible functional sequence can be: from a hole-conducting polymer layer HTL wanders a hole through the valence band of a lumophore into the likewise hole-conducting Antenna shell and from there into the valence band of a lumophore, which adjoins the electron-conducting layer ETL. simultaneously An electron from the ETL layer enters the conduction band of the Nanocrystal. The resulting exciton can finally with a certain probability radiant decay. The metallic one Antenna core can increase the radiative decay rate.

• • eine lückenlose Schicht aus Antennen A, so dass kein Kontakt HTL mit ETL möglich ist (nicht dargestellt). Die Schichten 22_1 und 22_2 können entfallen.
• • Im Fall von Lücken zwischen den Antennen durch die zusätzliche Verwendung einer el. isolierenden Schicht 22_2.

The el. Current is intended to flow substantially across the antenna instead of causing a "short circuit" between the ETL and HTL layers. This is achieved by:

• A gap-free layer of antennas A, so that no contact HTL with ETL is possible (not shown). The layers 22_1 and 22_2 can be omitted.
• • In the case of gaps between the antennas by the additional use of an el. Insulating layer 22_2 ,

The layer 22_2 is selectively coated between the antenna particles. You can z. From sol-gel layers (eg, organosilicate layers), organic polymer layers (eg, polystyrene, polymethyl methacrylate, polyvinyl butanol, aliphatic hydrocarbons), SAM layers (eg, mono- or multilayers of alkyl or phenyl Molecules), MOCVD layers (eg Al 2 O 3 layer). So that the layer 22_2 not deposited on the antennas but only between them, the underlying layer has HTL or the optional layer 22_1 have a different surface property relative to the antenna surface or the shell molecules of the antenna and the lumophore. For selective coating with sol-gel layers or polymer layers, the layers HTL or 22_1 z. B. have a hydrophobic surface, while the molecular shell of the antenna behaves hydrophilic. Then the layer can 22_2 by means of a nonpolar solvent (eg toluene) or vice versa. So that the surface of the antenna or the molecular shell z. B. has a hydrophobic character, their molecular shells as functional groups z. B. methyl groups or z. As hydroxyl or carboxyl groups for a hydrophilic surface. If nanocrystals z. B. can be used with a shell of tri-n-octylphosphinoxid (TOPO), which is hydrophobic, a subsequent phase transfer can be carried out on the nanocrystals. Other lumophors such as organic semiconductor molecules may also have appropriate functional groups to create a hydrophobic or hydrophilic antenna surface.

To selectively deposit SAM layers between the antennas have the HTL layer and the layer 22_1 functional groups (eg, amino, thiol groups, etc.) to which the SAM can bind with its coupling groups (eg, carboxyl groups, alkyl halides, etc.), the antenna shells then forming a surface own, to which the SAM can not couple.

To z. B. Al2O3 layers selectively deposited by MOCVD between the antennas, z. B. the layer 22_1 possess functional OH groups, which can decompose the precursor.

A function of the layer 22_1 is thus the provision of a specific surface for the production of the layer 22_2 ,

The general structure of the emitter or the photovoltaic element in 22 is as follows:
On a transparent substrate Sub (eg glasses, plastics) a transparent anode An of preferably transparent conductive oxides (eg ITO) was coated. Alternatively, a few nm thick gold layers can be used for transparent anodes. On these transparent oxides are optionally a hole injection layer (eg, copper phthalocyanine, polyaniline, etc. not shown).

The hole-conducting layer HTL consists of p-doped conjugated or aromatic polymers (for example, poly-phenylene-vinylene derivatives, triarylamine derivatives, poly (3,4-ethylenedioxythiophene), polypyrroles, etc.). This layer can also be composed of several different semiconductor layers in order to optimize the adaptation to the lumophore. On the HTL layer may optionally (not shown) an electron-blocking layer of z. Poly (9-vinylcarbazole) or bathocuproine. On top of that lies the optional layer 22_1 , The task of the shift 22_1 on the one hand is the hole injection into the lumophore and on the other hand the provision of a specific surface for the production of the layer 22_2 , The layer 22_1 consists of a p-doped organic semiconductor (eg polythiophene derivatives such as PEDOT, poly-phenylene-vinylene derivatives, triarylamine derivatives etc.) like other hole conductor layers as well. At the same time, however, the layer has 22_1 rel. to the antennas A a different surface. The electron-conducting layer ETL (made of, for example, aluminum tris-8-hydroxyquinolinolate, metal-doped organic semiconductors) has been used e.g. B. coated by vapor deposition or spin coating on the antennas. The layer ETL can also z. As fullerenes or metal / semiconductor quantum dots included to CT transitions, or donor-acceptor connections between the antenna A (= particle 1 with lumophore 2 ) and the layer ETL (= contact 4 ). Between the ETL layer and the cathode Ka can still electron injection layers 22_3 z. B. LiF, MgO, NaF, etc. are located. The cathode Ka finally consists of a metal with a low work function such as Al, Mg, Ca, Ag, Mg / Ag, etc. The entire element is finally in a diffusion-tight housing of z. B. encapsulated glass (not shown).

23 represents a variant to that in 22 disclosed element. The layer 22_1 corresponds to the hole transport layer HTL. On top of that is at least one complete layer of lumophores. Nanocrystals can z. B. be applied by means of sedimentation or spin coating. Semiconducting polymers in the form of z. As aluminum tris-8-hydroxyquinolinolate can also be replaced by z. B. vapor deposition on the HTL layer are coated. Molecular diodes, in contrast, can react in the correct polarity on a suitably functionalized layer 22_1 anchored. The layer has 22_1 again functional groups as in the variant embodiment 22 or such. In WO 03/0411182 described. The molecular diodes then have the appropriate coupling group. In the event that at least one gapless layer of antennas A has been applied to the lumophore, the insulation layer can 22_2 also omitted here. Otherwise, a layer 22_2 that of the layer 22_2 out 22 corresponds, selectively coated on the lumophore. The procedure is analogous to 22 , For example, an insulating phenyl-SAM having anchor groups for the surface of the lumophore can be produced. For further layers see description 22 ,

An alternative embodiment of the in 23 The element shown can be achieved by depositing the lumophores in at least one dense layer on the HTL layer. It can be an electron-conducting layer 22_1 with thicknesses (eg 5 nm) which at the same time produces at least part of the distance Z from the metal core of the antenna particles. The antenna particles, which are then on the layer 22_1 have a correspondingly thinner el. conductive shell (eg., 5 nm) of z. B. π-conjugated organic molecules.

In 24 an emitter or a photovoltaic element is shown, which is analogous to 22 is executed, but from antennas A with two antenna particles 1 and 3 consists. The antennas A are with gaps on the optional sublayer 22_1 or the HTL layer attached. The layer 22_2 that correspond to the layer 22_2 in 22 not only takes over the isolation between the HTL and the ETL layer, but also the isolation of the antenna particle 3 against the HTL layer. On the hole-conducting layers HTL or optional 22_1 becomes the first antenna particle 1 z. B. coated by sedimentation. The spaces between the particles 1 are then analogous to 22 with insulating Layers of z. B. filled polystyrene. The lumophore are either already on the surface of the antenna particle 1 , or they will after the application of the particle 1 immobilized on it by molecular bridges, or alternatively, the lumophores are on the surface of the antenna particle 3 , In the last case z. B. own the lumophores that are on the particle 3 contain free anchor groups (such as amino groups) that attach to the antenna particles 1 can connect. Before applying the electron-conducting layer ETL, the antenna particle 1 with an el. insulating layer 24_1 be covered to make a direct connection between the layer ETL and particles 1 to prevent. This insulation layer can, for. By a selective MOCVD coating of Al 2 O 3 on the particle 1 respectively. The particle 1 may have a molecular shell to which the precursor decomposes in the MOCVD (eg, OH groups). Alternatively, el. Insulating SAM layers of z. As alkyl or phenyl chains on the surface of the particle 1 anchored. These insulating molecules can be z. B. also have amino anchor groups. The metallic cathode layer Ka is located at a distance d (not shown) from the antenna A which is approximately in the range of 0.125 to 0.35 times the wavelength (cf. 13 ) and at the same time acts as a reflector layer R. The rest of the structure corresponds to that 22 and 23 ,

Also in 25 is a cross section through a device shown, in which the antennas A from two particles 1 and 3 consist. As a result, it largely corresponds to the in 24 sketched embodiment. The difference is that the antennas A are here in a vertical arrangement. The layer 22_2 Therefore, in addition to its isolation task also fulfills the function of a mask in the immobilization of the antenna particle 3 , The layer 22_1 consists of an organic hole conductor that has been modified so that it functional groups, eg. For example, OH groups containing an altered surface property relative to the surface of the particle 1 cause. For example, SAM layers and SAM multilayers based on these functional groups can be used to form the layer 22_2 represent. Or, selectively using an MOCVD method on the exposed layer 22_1 Metal oxide layers (eg Al2O3, ZrO2 etc.) are produced (see also eg [22] or [23]). The layer 22_1 has, for example, a hydrophilic character through the hydroxyl or carboxyl groups, while the molecular bridges around the antenna particle 1 methyl-terminated and thus hydrophobic.

The layer structure up to the layer 22_1 runs like the 22 to 24 , On the shift 22_1 become antenna particles 1 z. B. deposited by means of a sedimentation from a colloidal solution, wherein the particles are randomly distributed. The free spaces between the particles 1 then z. B. coated by MOCVD so far that the layer thickness of the layer 22_2 slightly larger than the height of the particles 1 is. As a result, in the following operation, the lumophore or antenna particles 3 using molecular anchors only above the particles 1 be immobilized. The further structure with the electron-conducting layer ETL, the electron injection layer 22_2 , the metal cathode and the protective encapsulation of the device corresponds to the 22 to 24 ,

26 represents a modification of the device 25 dar. The structure is thus identical to 25 with the difference that on the deposited antenna particles 1 and 3 each by means of a selective MOCVD process further "antenna core" material z. B. Ag or Au was coated so that elongated antennas arise.

In the 27 to 29 antenna emitters or voltage sources are drawn in which the antennas are enclosed or contacted in various inorganic semiconductor layers of elemental or compound semiconductors. The antennas can simultaneously - in addition to their task to increase the quantum yield - also act as scattering centers and thus improve the light extraction from the semiconductor element. The devices are each shown greatly simplified. Instead of z. B. only individual p- or n-doped layers as shown, whole layer systems can be used to z. B. band adjustments to the lumophore and antennas perform.

27 outlined a variant in which a dense packing of lumophore-covered antennas A on a z. B. p-doped semiconductor layer 27_3 (e.g., p-ZnO, p-GaN, p-InGaAs, etc.) e.g. B. was deposited by means of sedimentation. On the antennas A was another semiconductor layer 27_4 z. B. generated by a MOCVD coating. It is opposite to the layer 27_3 doped, so z. B. n-doped. Above the layers 27_3 and 27_4 are the layers 27_2 respectively. 27_5 applied. They are doped correspondingly higher than the associated layers 27_3 and 27_4 an ohmic contact with the metallic contact layers 27_1 and 27_6 manufacture. For example, gold may be used for the p-doped and indium for the n-doped semiconductor. The substrate Sub consists for. B. of transparent materials such as sapphire, wherein the contact layer 27_6 then it is not transparent, or it is z. B. GaAs and the layer 27_6 is very thin or perforated to allow the light exit / entrance. By mixing antennas with different resonance frequency and associated lumophore, the light color can be adjusted.

28 corresponds to the execution in 27 However, the lumophore are separated as a dense layer on the also dense antenna layer of antennas A z. B. by sedimentation from a colloid solution. For this purpose, first antenna particles are applied and then coated one or more layers of lumophore on the antennas before the layers 27_4 . 27_5 and 27_6 be generated. The light color can be changed by mixing lumophores. The antennas can z. B. be designed for a mean wavelength of all lumophors used in an emitter.

In 29 finally, the z. B. generated by MOCVD rel. high quality semiconductor layers replaced by semiconductor particles of corresponding inorganic n- or p-doped semiconductors. These particle layers can be sequentially immobilized on each other by molecular anchors or z. B. be generated by sedimentation or evaporation of a colloid solution. The lattice defects and surface states of the particles can on the one hand z. B. reduce the radiative recombination rate, but this can be compensated by the antennas. In addition, the extraction of the light from the particle layer is facilitated because of the multiple scattering at the antennas and particles.

Naturally are in addition to the detailed variants described many more possible. For example, you can Antennas made of a precious metal z. B. already on a conductor layer be immobilized and the lumophore in the form of semiconductor nanocrystals can through a three-dimensional island growth mode selectively with MOCVD directly on the surface of the antennas be generated. Colloidal nanoparticles and crystals can rel. simply immobilized on the substrate by means of SAM. Alternatively, it is in the embodiments but also possible, the antenna particles directly on the substrate or to grow a SAM layer. For example, you can Nanorods via chemical processes or by PVD / CVD or similar processes directly on a substrate become.

Or Antenna emitter or voltage sources can be in molecular electronic Applications are integrated. Emitter and receiver for polarized radiation can pixel by pixel different polarization directions generate or absorb when the orientation of the antennas in according to the pixels. With the antenna emitters can One-photon sources are manufactured inexpensively, etc.

Of course So the variants described can be more diverse Be modified by a specialist, without this in principle falls outside the scope of this invention.

references:

• [1] Hans Mertens, Controlling plasmon-enhanced luminescence, Thesis, Utrecht University 2007
• [2] H. Mertens, A. Polman, Strong Luminescence quantum efficiency enhancement near prolate metal nanoparticles: dipolar versus higher-order modes, Center for Nanophotonics Netherlands, 2007
• [3] U. Hakanson, M. Agio, S. Kuhn, L. Rogobete, T. Kalkbrenner and V. Sandoghdar, Coupling of plasmonic nanoparticles to their environment in the context of van der Waals-Casimir interactions, Laboratory of Physical Chemistry, ETH Zurich, 8093 Zurich, Switzerland
• [4] Palash Bharadwaj and Lukas Novotny, Spectral dependence of single molecule fluorescence enhancement, OPTICS EXPRESS 14266, 17 October 2007 / Vol. 15, no. 21
• [5] James R. Heath and Mark A. Ratner, Molecular Electronics, Physics Today, May 2003, 46
• [6] Lavinia Rogobete, Franziska Kaminski, Mario Agio, and Vahid Sandoghdar, Design of plasmonic nanoantennae for enhancing spontaneous emission, June 15, 2007 / Vol. 32, no. 12 / OPTICS LETTERS
• [7] Mario Agio, Giorgio Mori, Franziska Kaminski, Lavinia Rogobete, Sergei Kuhn, Victor Callegari, Philipp M. Nellen, Franck Robin, Yasin Ekinci, Urs Sennhauser, Heinz Jackel, Harun H. Solak, and Vahid Sandoghdar, Engineering gold nanoantennae to enhance the emission of quantum emitters, Proceedings of SPIE Vol. 6717, 67170R, (2007)
• [8th] Gretchen A. DeVries, Markus Brunnbauer, Ying Hu, Alicia M. Jackson, Brenda Long, Brian T. Neltner, Oktay Uzun, Benjamin H. Wunsch, Francesco Stellacci, Divalent Metal Nanoparticles, SCIENCE Vol 315 pp. 358 ff., 2007
• [9] Lavinia Rogobete, Franziska Kaminski, Mario Agio, and Vahid Sandoghdar, Design of plasmonic nanoantennae for enhancing spontaneous emission, June 15, 2007 / Vol. 32, no. 12 / OPTICS LETTERS
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• [11] Jorge Pérez-Juste, Isabel Pastoriza-Santos, Luis M. Liz-Marzán, Paul Mulvaney, Gold nanorods: Synthesis, characterization and applications, Coordination Chemistry Reviews 249 (2005) 1870-1901
• [12] Christina Debus, Elastic and Inelastic Light Scattering on Precious Metal Nanoparticles and Sharp Gold Tips, Dissertation, University of Siegen, 2004
• [13] Nikhil R. Jana, Latha Gearheart and Catherine J. Murphy, Wet Chemical Synthesis of Silver Nanorods and Nanowires of Controllable Aspect Ratio, Chem. Commun., 2001, 617-618
• [14] Tae-Hee Lee, SILVER NANOCLUSTER SINGLE MOLECULE OPTOELECTRONICS AND ITS APPLICATIONS, Thesis, Georgia Institute of Technology Jan 2004
• [15] Jason Vielma and PT Leung, Nonlocal optical effects on the fluorescence and decay rates for admolecules at a metallic nanoparticle, THE JOURNAL OF CHEMICAL PHYSICS 126, 194704 (2007)
• [16] H. Mertens, AF Koenderink, and A. Polman, Plasmon-enhanced luminescence near noble-metal nanospheres: Comparison of Exact Theory and Improved Barley and Nitzan Model, PHYSICAL REVIEW B 76, 115123 (2007)
• [17] Chang Chen, Li Wang, Guohua Jiang and Haojie Yu, CHEMICAL PREPARATION OF SPECIAL-SHAPED METAL NANOMATERIALS THROUGH ENCAPSULATION OR INDUCEMENT IN SOFT SOLUTION, Rev. Adv. Sci. 11 (2006) pages 1 to 18
• [18] ZHIHONG NIE, DANIELE FAVA, EUGENIA KUMACHEVA, SHAN ZOU, GILBERT C. WALKER AND MICHAEL RUBINSTEIN, Self-assembly of metal-polymer analogues of amphiphilic triblock copolymer, nature materials, 2007; doi: 10.1038 / nmat1954
• [19] Christian Krüger, Colloidal organization on lithographically prepared silane layers: New possibilities of structure formation on surfaces, dissertation, Johannes Gutenberg University in Mainz, 2001
• [20] Johanna Jacobs Penninkhof, Tunable plasmon resonances in anisotropic metal nanostructures, Ph. D. Thesis Utrecht University, September 2006
• [21] Joel van Embden, Jacek Jasieniak, Daniel E. Gomez, Paul Mulvaney, Michael Giersig, Review of the Synthetic Chemistry Involved in the Production of Core / Shell Semiconductor Nanocrystals, Aust. J. Chem. 2007, 60, 457-471
• [22] B.-C. Kang, D.-Y. Jung, RA Fischer, J.-H. Boo, Selective MOCVD of Titanium Oxide and Zirconium Oxide thin films using single molecular precursors on Si (100) substrates, Journal of Physics and Chemistry of Solids 69 (2008) 128-132
• [23] Carl-Christoph Winter, Chemical vapor deposition of gold, copper and aluminum oxide on self-assembled monolayers, DISSERTATION, Ruhr-Universität Bochum, 2000

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

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• US 5382813 [0002]
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• U. Hakanson, M. Agio, S. Kuhn, L. Rogobete, T. Kalkbrenner and V. Sandoghdar, Coupling of plasmonic nanoparticles to their environment in the context of van der Waals-Casimir interactions, Laboratory of Physical Chemistry, ETH Zurich , 8093 Zurich, Switzerland [0174]
• - Palash Bharadwaj and Lukas Novotny, Spectral dependence of single molecule fluorescence enhancement, OPTICS EXPRESS 14266, 17 October 2007 / Vol. 15, no. 21 [0174]
• - James R. Heath and Mark A. Ratner, Molecular Electronics, Physics Today, May 2003, page 46 [0174]
• - Lavinia Rogobete, Franziska Kaminski, Mario Agio, and Vahid Sandoghdar, Design of plasmonic nanoantennae for enhancing spontaneous emission, June 15, 2007 / Vol. 32, no. 12 / OPTICS LETTERS [0174]
• - Mario Agio, Giorgio Mori, Franziska Kaminski, Lavinia Rogobete, Sergei Kuhn, Victor Callegari, Philipp M. Nellen, Franck Robin, Yasin Ekinci, Urs Sennhauser, Heinz Jackel, Harun H. Solak, and Vahid Sandoghdar, Engineering gold nanoantennae to enhance the emission of quantum emitters, Proceedings of SPIE Vol. 6717, 67170R, (2007) [0174]
• - Gretchen A. DeVries, Markus Brunnbauer, Ying Hu, Alicia M. Jackson, Brenda Long, Brian T. Neltner, Oktay Uzun, Benjamin H. Wunsch, Francesco Stellacci, Divalent Metal Nanoparticles, SCIENCE Vol. 315 p. 358 ff., 2007 [ 0174]
• - Lavinia Rogobete, Franziska Kaminski, Mario Agio, and Vahid Sandoghdar, Design of plasmonic nanoantennae for enhancing spontaneous emission, June 15, 2007 / Vol. 32, no. 12 / OPTICS LETTERS [0174]
• - Mario Agio, Giorgio Mori, Franziska Kaminski, Lavinia Rogobete, Sergei Kuhn, Victor Callegari, Philipp M. Nellen, Franck Robin, Yasin Ekinci, Urs Sennhauser, Heinz Jackel, Harun H. Solak, and Vahid Sandoghdar, Engineering gold nanoantennae to enhance the emission of quantum emitters, Proceedings of SPIE Vol. 6717, 67170R, (2007) [0174]
• - Jorge Pérez-Juste, Isabel Pastoriza-Santos, Luis M. Liz-Marzán, Paul Mulvaney, Gold nanorods: Synthesis, characterization and applications, Coordination Chemistry Reviews 249 (2005) 1870-1901 [0174]
• - Christina Debus, Elastic and Inelastic Light Scattering on Precious Metal Nanoparticles and Sharp Gold Tips, Dissertation, University of Siegen, 2004 [0174]
• Nikhil R. Jana, Latha Gearheart and Catherine J. Murphy, Wet Chemical Synthesis of Silver Nanorods and Nanowires of Controllable Aspect Ratio, Chem. Commun., 2001, 617-618 [0174]
• - Tae-Hee Lee, SILVER NANOCLUSTER SINGLE MOLECULE OPTOELECTRONICS AND ITS APPLICATIONS, Thesis, Georgia Institute of Technology Jan 2004 [0174]
• - Jason Vielma and PT Leung, Nonlocal optical effects on the fluorescence and decay rates for admolecules at a metallic nanoparticle, THE JOURNAL OF CHEMICAL PHYSICS 126, 194704 (2007) [0174]
• - H. Mertens, AF Koenderink, and A. Polman, plasmon-enhanced luminescence near noble-metal nanospheres: Comparison of exact theory and improved barley and Nitzan model, PHYSICAL REVIEW B 76, 115123 (2007) [0174]
• - Chang Chen, Li Wang, Guohua Jiang and Haojie Yu, CHEMICAL PREPARATION OF SPECIAL-SHAPED METAL NANOMATERIALS THROUGH ENCAPSULATION OR INDUCEMENT IN SOFT SOLUTION, Rev. Adv. Sci. 11 (2006) pages 1 to 18 [0174]
• ZHIHONG NIE, DANIELE FAVA, EUGENIA KUMACHEVA, SHAN ZOU, GILBERT C. WALKER AND MICHAEL RUBINSTEIN, Self-assembly of metal-polymer analogues of amphiphilic triblock copolymer, nature materials, 2007; doi: 10.1038 / nmat1954 [0174]
• - Christian Krüger, Colloidal organization on lithographically prepared silane layers: New possibilities of structure formation on surfaces, dissertation, Johannes Gutenberg University in Mainz, 2001 [0174]
• - Johanna Jacobs Penninkhof, Tunable plasmon resonances in anisotropic metal nanostructures, Ph. D. Thesis Utrecht University, September 2006 [0174]
• - Joel van Embden, Jacek Jasieniak, Daniel E. Gómez, Paul Mulvaney, Michael Giersig, Review of the Synthetic Chemistry Involved in the Production of Core / Shell Semiconductor Nanocrystals, Aust. J. Chem. 2007, 60, 457-471 [0174]
• - B.-C. Kang, D.-Y. Jung, RA Fischer, J.-H. Boo, Selective MOCVD of Titanium Oxide and Zirconium Oxide thin films using single molecular precursors on Si (100) substrates, Journal of Physics and Chemistry of Solids 69 (2008) 128-132 [0174]
• - Carl-Christoph Winter, Chemical vapor deposition of gold, copper and aluminum oxide on self-assembled monolayers, DISSERTATION, Ruhr-Universität Bochum, 2000 [0174]

Claims (55)

Light or voltage source, characterized in that: - You from one or more lumophores 2 in combination with at least one el. conductive particle 1 or 3 consists. - The light generation in the case of a light source by the electrically excited luminescence of the Lumophore 2 alone or in conjunction with the particles 1 respectively. 3 he follows. - The el. Voltage generation in the case of a voltage source by a light-induced excitation of the lumophore 2 alone or in conjunction with the particles 1 respectively. 3 he follows. - The el. Current from or to the lumophores 2 essentially via the electrically conductive particles 1 such as 3 or the contact 4 flows. - The active lumophore 2 , ie Lumophore, which emit light or generate voltage, essentially at a defined distance from the surface of the particles 1 respectively. 3 are located. - The electrically conductive particles 1 and 3 Have volume between 3000 nm ^ 3 and 70 * 10 ^ 6 nm ^ 3. - Directly between the optional in the particles 1 and 3 contained metallic cores 101 and 301 , so bypassing the Lumophore 2 , no significant tunnel current flows. Light or voltage source according to claim 1, characterized in that the lumophore 2 can be selected from the following list: - π-conjugated molecules and polymers - donor-acceptor or donor-bridge acceptor systems in molecules and transitions (eg in molecular diodes, in the transition ligand nanocrystal or bridge molecule fullerene, etc. ) - molecular diodes - molecules with strong charge transfer transition parallel to the current direction - charge transfer transitions between molecules, eg. B. the bridge molecules 102 . 202 . 302 , S1, S2 and metals (eg ions, metallic clusters or quantum dots), fullerenes, semiconductor nanocrystals and semiconductor layers, wherein said metals, fullerenes, semiconductor nanocrystals and semiconductor layers also form part of the contact 4 or a particle 1 or 3 could be. - Organometallic phosphorescence emitters - Semiconductor quantum dots (nanocrystals) with and without semiconductor shells. - metal cluster z. B. Ag ₂ to Ag ₈ - molecules that have anchor groups on the surfaces of the particles 1 respectively. 3 are anchored and inelastic collisions between the particles 1 and 3 or conductor tracks tunneling electrons are excited. - biological molecules that show a charge shift upon absorption of light. - Dye molecules - Carbon nanotubes - A pn transition between the particles 1 and 3 or a conductor track Light or voltage source according to claim 2, characterized in that: - At least one of said electrically conductive particles 1 and 3 as an antenna in the wavelength range of the lumophore 2 and thereby the effect of Lumophors 2 strengthened. Wherein the core of said antenna made of metals such. B. Au, Ag, Al, Cu, the sufficient surface plasmons in the wavelength range of the lumophore 2 allow. - The Lumophores 2 essentially at a defined distance Z from the said metallic cores of the particles 1 respectively. 3 are located, the increased quantum efficiency and excitation field strengths of the Lumophors 2 guaranteed at low radiationless losses. Light or voltage source according to claim 1 to 3, characterized in that: - The electrical conductivity of the particles 1 and 3 through metallic cores 101 respectively. 301 in combination with el. conductive molecules 102 respectively. 302 arises. Light or voltage source according to claim 1 to 3, characterized in that: - The electrical conductivity of the particles 1 and 3 produced by el. conductive layers around the cores. Light or voltage source according to claim 5, characterized in that: - The electrically conductive layer of at least one inorganic semiconductor layer 104 respectively. 304 consists. Light or voltage source according to claim 5, characterized in that: - The electrically conductive layer of at least one organic semiconductor layer 104 respectively. 304 consists. Light or voltage source according to claim 1 to 3, characterized in that: - At least one of said el. Conductive particles 1 respectively. 3 completely composed of inorganic semiconductors. Light or voltage source according to claim 1 to 3, characterized in that: - You from a el. Conductive particles 1 or 3 , at least one lumophore 2 and a contact 4 consists. Wherein the contact 4 who is in contact with the lumophore 2 is, from z. B. organic or inorganic conductor tracks or conductor layers. Light or voltage source according to claim 1 to 3, characterized in that: - You from a el. Conductive particles 1 and 3 and at least one lumophore 2 consists. Light or voltage source according to claim 4 to 10, characterized in that: - The el. Conductivity of said el. Conductive molecules 102 and 302 , Layers 104 and 304 , Particles 1 . 3 and contact 4 based on a p- or n-doping. Light or voltage source according to claim 4 to 11, characterized in that: - The doping of said particles 1 and 3 or the contact 4 is opposite to each other. Light or voltage source according to one of the preceding claims, characterized in that: - the particles 1 respectively. 3 or the lumophores 2 el. are conductively connected to conductor tracks or conductor layers. Light or voltage source according to claim 13, characterized in that: - The said conductor tracks or conductor layers preferably consist of semiconductors, wherein they preferably have the same type of doping as the associated particles 1 respectively. 3 with which they are in direct contact. - Alternatively, the said interconnects do not consist of semiconductors, but z. B. degenerate semiconductors such. As ITO or TiN, metals, semi-metals. Light or voltage source according to one of the preceding claims, characterized in that: - The particles 1 . 3 and the lumophores 2 with each other or with the said interconnects and conductor layers through molecular bridges 102 . 202 . 302 , S1, S2, which have a required distance Z of the lumophore 2 from the said metallic cores 101 and 301 can comply. Light or voltage source according to claim 15, characterized characterized in that: - The said molecular bridges from organic, inorganic or biological molecules consist of specific anchor groups on the surfaces the components can adhere. Light or voltage source according to one of the preceding claims, characterized in that: - The surface of said particles 1 and 3 or said conductor tracks or conductor layers has been modified by surface modification layers, so that an el. Contact or coupling of said molecular bridges to said surface come about or can be prevented. Light or voltage source according to one of the preceding claims, characterized in that: - The said metallic cores of the particles 1 respectively. 3 by at least one dielectric layer 103 respectively. 303 from the el. conductive layers 104 respectively. 304 are separated. Light or voltage source according to claim 18, characterized characterized in that: - The said dielectric Layer consists of molecules that are on the said metallic Cores are anchored. (eg silanes, PMMA, HPMA) Light or voltage source according to claim 18, characterized characterized in that: - The said dielectric Layer of inorganic dielectrics such as oxides, fluorides, nitrides, Carbon z. SiO 2, Al 2 O 3, Y 2 O 3, MgO, TiO 2, V 2 O 3, HfO 2, ZrO 2, AlN, MgF2, SrF3, KF, CaF2, LiF2, BaF2, YF3, LaF3, Cr2O3, diamond consists. Light or voltage source according to one of the preceding claims, characterized in that: - The said metallic cores of the particles 1 respectively. 3 have a spherical shape. Light or voltage source according to one of the preceding claims, characterized in that: - The said metallic cores of the particles 1 respectively. 3 have an elongated or rod-shaped shape. Light or voltage source according to one of the preceding claims, characterized in that: - The said metallic cores of the particles 1 respectively. 3 have a bow-tie shape. Light or voltage source according to one of the preceding claims, characterized in that: - The said metallic cores of the particles 1 respectively. 3 have a polyhedral shape. Light or voltage source according to claim 21 to 24, characterized in that: - The said metallic cores of the particles 1 respectively. 3 Made of solid metal. Light or voltage source according to claim 21 to 24, characterized in that: - The said metallic cores of the particles 1 respectively. 3 consist of metal sheaths around dielectric cores. Light or voltage source according to claims 2, 4, 15 and 16, characterized in that: - the el. Conductive molecules 102 . 202 . 302 , S1, S2 consist of π-conjugated or aromatic molecules which have at least one anchor group for attachment to the particles 1 . 3 , Lumophore 2 or conductor tracks and conductor layers Light or voltage source according to claims 2, 15 and 16, characterized in that: - the molecules 102 . 202 . 302 , S1, S2 have no significant el. Conductivity, but are so short that they are bound by the electrons z. B. can be tunneled through. For example, said molecules consist of tri-n-octylphosphine oxide, tri-n-octylphosphine or short aliphatic hydrocarbons. Light or voltage source according to claims 2, 4, 15, 16, 27, 28, characterized in that: - the molecules 102 . 202 . 302 , S1, S2 have specific anchor groups for the surfaces or contact groups of the particles and interconnects to be joined, so that the particles are linked selectively and correctly poled. For example, that the molecules 102 via a first anchor group to the particle 1 and a second anchor group for a first coupling group of a lumophore 2 dispose etc. - Alternatively, the molecules 102 . 302 . 202 , S1, S2 have functional end groups (eg, methyl, carboxyl, amino, hydroxyl, etc.) that produce specific surface properties (eg, a hydrophobic or hydrophilic surface). A method for producing the antennas A according to claims 1 to 29, comprising the following steps: - production of the particles 1 and 3 as well as the Lumophore 2 z. B. by wet chemical methods - preparation of bridge molecules 102 . 202 and 302 z. B. by chemical synthesis - mixing of the particles 1 . 3 with the lumophores 2 and self-linking by means of the bridging molecules 102 . 202 . 302 so that z. B. particles 1 enveloped by lumophores 2 arise. A method for producing the antennas A according to claims 1 to 29, comprising the following steps: - production of the particles 1 and 3 as well as the Lumophore 2 z. B. by wet chemical method - compound of the particles 1 . 3 with the lumophores 2 by depositing on each other (eg by spray-drying, sedimentation, evaporation of the solvent) so that an el. contact between the particles, lumophores 2 and tracks or layers is generated. A method for manufacturing the antennas A according to claims 1 to 29, comprising the following steps: - production of the antenna particles 1 and or 3 by lithographic process - production of the Lumophore 2 z. B. by wet chemical method or chem. Synthesis. - Optional preparation of bridge molecules 102 . 202 and 302 by chemical synthesis. - depositing the lumophore 2 between the antenna particles 1 and 3 or contact 4 or linking the antenna particles 1 and 3 with the lumophores 2 through the bridge molecules 102 . 202 . 302 , S1, S2 by self-attachment. Light or voltage source, the antennas A according to the Claims 1 to 32 used as light or voltage sources, characterized in that: - Tracks L1 and L2 can be used to contact the antennas A, at least about short distance parallel. - The tracks L1 and L2 to metallic conductor structures L1_Z and L2_Z el. Contacted are essentially located below the tracks L1 and L2 extend. - The antennas A on the surface the said light or voltage sources are, the antennas A be covered with transparent dielectric protective layers can. Light or voltage source according to claim 33, characterized in that: - The interconnects L1 and L2 have distances from each other which are smaller than the width of an antenna A, wherein the antenna A each consist of a particle 1 or both particles 1 and 3 can exist. Light or voltage source according to claim 33, characterized in that: - The conductor tracks L1 and L2 are offset in height, so that a trough between two conductor tracks L1 can form, which with antennas A and Lumophores 2 can be covered. - The antennas A are laterally contacted to the tracks L1 and at the same time down to the tracks L2 el., Each Lumophore 2 between the antennas A and the tracks L1 and / or L2 can be located. Light or voltage source according to claim 33 to 35, characterized in that: - The conductor tracks L1 and L2 are covered with molecules S1 and S2, the lumophore 2 or particles 1 respectively. 3 can immobilize by anchor groups. - The interconnects L1 and L2 are covered with molecules S1 and S2, which can cause an adaptation of the work function of the interconnects L1 and L2. Light or voltage source according to claim 36, characterized in that: - the conductor tracks L1 and L2 with layers 15_1 covered, which are the bonding of molecular layers 102 . 202 . 302 , S1, S2 can prevent. Light or voltage source, the antennas A according to the Claims 1 to 32 used, characterized in that: - conductor layers be used to contact the antennas A, by alternating Coating of a substrate with el. Ladders and insulators produced were. Light or voltage source according to claim 33 to 37 and claim 38, characterized in that: - The Conductor tracks L1 and L2 or the said conductor layers of inorganic Element or compound semiconductors exist that over ohmic contacts with metallic conductor structures (eg L1_Z or L2_Z) are connected. - The said element or compound semiconductors are differently doped to each other (eg, L1 is p-doped and L2 is n-doped). Light or voltage source, the antennas A according to claims 1 to 32 used as light or voltage sources. Where the antennas A and the associated Lumophore 2 are embedded in organic hole- or electron-conducting semiconductor layers, which are located between metallic or transparent electrodes, characterized in that: - The el. Current flows substantially via the el. conductive antennas A. - The antennas A are located in or at the transition region of said electron-conducting to the hole-conducting layer. Light or voltage source according to claim 40, characterized in that: - The lumophore 2 in a layer parallel to the layer of particles 1 respectively. 3 the antenna A is located. Light or voltage source according to claim 40 and 41, characterized in that: The antennas A have been deposited in at least one dense layer, so that the electrical current flows via the antennas A. Light or voltage source according to claim 40, characterized in that: - The antennas A each consist of particles 1 and 3 consist, which are arranged approximately horizontally, whereby particles 3 opposite the pad and particles 1 are isolated from the layer lying on it el. - The mentioned particles 1 and 3 through Lumophore 2 el. are connected. Light or voltage source according to claim 40, characterized in that: - The antennas A each consist of particles 1 and 3 consist, which are arranged approximately vertically, whereby the particles 1 and 3 through Lumophore 2 el. are connected. Light or voltage source according to claim 44, characterized in that: - The particles mentioned 1 and 3 consist of elongated particles. Light or voltage source according to claim 40 to 45, characterized in that: - The antennas A are not deposited in a dense layer. - The spaces between the antennas A through an el. Insulating layer 22_2 from z. As organic polymers, sol-gel layers or inorganic dielectrics are filled. The layer 22_2 can by means of a selective coating on z. B. hydrophobic or hydrophilic sublayers have been generated. Light or voltage source according to claim 33 to 46, characterized in that: - The antennas A each on electrically divided conductor tracks and conductor layers lie so that the antennas A in individual surface sections operate separately, with the antennas optional in the respective separate area sections z. B. by different Wavelengths or polarization directions can distinguish. Device according to one of the preceding claims, characterized in that: - At least one at a time Antenna A as emitter and at least one antenna A as voltage source operated in close proximity to each other to z. As a signal transmission between emitter and voltage source Afford. Light or voltage source, the antennas A according to claims 1 to 32 used as light or voltage sources. Where the antennas A and the associated Lumophore 2 are embedded in inorganic p- or n-doped semiconductor layers, which are bonded via ohmic contacts to metallic leads, characterized in that: - The el. Current flows essentially via the el. conductive antennas A. - The antennas A are located in or at the transition region of said n-doped to p-doped layer. Light or voltage source according to claim 49, characterized in that: - The Lumophore 2 in a layer parallel to the layer of particles 1 respectively. 3 the antenna A is located. Light or voltage source according to claim 49 and 50, characterized in that: - The antennas A were deposited in at least one dense layer, so that the el. current flows through the antennas A. Light or voltage source according to claim 49 to 51, characterized in that: - The mentioned inorganic semiconductor layers in which the antennas A embedded are, even consist of inorganic semiconductor particles. Light or voltage source according to claim 33 to 52, characterized in that: - The antennas A at a suitable distance to a metallic reflector layer R are located to the emission or reception characteristics of the antennas A change. Light or voltage source according to claim 33 to 53, characterized in that: - Antennas A, the were designed for different wavelengths be mixed to z. B. to produce a white light emitter. A method for producing the light or voltage sources according to claims 33 to 54 with the following steps: - Production of the antennas A. - Production of the substrates with the conductor layers or conductor tracks z. Example by coating methods or photolithographic methods. - Connection of the antennas A and the Lumophore 2 with the associated interconnects and conductor layers z. B. by deposition on each other (eg., By spray drying, sedimentation, evaporation of the solvent) or polarization proper immobilization using functionalized molecular layers 102 . 202 . 302 , S1, S2. Optional filling of the spaces between the antennas A with layers 22_2 , Coating of the antennas A with further conductor layers, if the antennas A do not abut against two separate conductor tracks L1 and L2. Optional encapsulation of the light or voltage sources according to the invention with transparent dielectric protective layers.