CN206134700U - Semiconductor photomultiplier spare - Google Patents
Semiconductor photomultiplier spare Download PDFInfo
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- CN206134700U CN206134700U CN201620870780.XU CN201620870780U CN206134700U CN 206134700 U CN206134700 U CN 206134700U CN 201620870780 U CN201620870780 U CN 201620870780U CN 206134700 U CN206134700 U CN 206134700U
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Abstract
The utility model discloses a semiconductor photomultiplier spare, including the parallelly connected the detection unit who distributes of a plurality of arrays, the detection unit comprises at avalanche photodiode, cancellation resistance and transparent electric capacity under the geiger mode work, transparent electric capacity comprises two transparent conductive electrode boards and the transparent dielectric that is located between the transparent conductive electrode board, transparent electric capacity is located the avalanche photodiode photosensitive surface directly over. The utility model discloses a mode that sets up transparent electric capacity reduces the whole electric capacity of the detection unit and device to improve semiconductor photomultiplier's temporal characteristic, this conversion rate that not only can improve semiconductor photomultiplier photosignal also can improve the temporal resolution that accords with based on semiconductor photomultiplier's application system. Higher light transmission rate has been guaranteed to transparent electric capacity, and the transparent electric capacity that lies in directly over the the detection unit photosensitive surface does not make the extra detection area of semiconductor photoelectric detector loss, and this has guaranteed the higher detection efficiency of semiconductor photomultiplier.
Description
Technical field
This utility model is related to photoelectron and microelectronic, more particularly to a kind of semiconductor light for photon detection
Electric multiplier device.
Background technology
What semiconductor optoelectronic multiplexer was that a kind of utilization avalanche semiconductor multiplication mechanism is detected to photon new partly leads
Body device.It is the array detecting structure being arranged in parallel by multiple probe units, and all of probe unit shares one
Electrode is used as the output of signal, and its probe unit is quenched resistance group by the avalanche photodide series connection being operated under Geiger mode angular position digitizer
Into.After being absorbed during photon incides diode, electron-hole will be produced in the photosensitive area of avalanche photodide
It is right.Due to there is higher electric field in the photosensitive area of avalanche photodide, the electrons of drift are by way of avalanche multiplication
A large amount of electron-hole pairs are produced in this high electric field, is ultimately resulted in and is punctured to form high current.Connect with avalanche photodide
Resistance is quenched near the diode, it can suppress the avalanche multiplication process of avalanche photodide and make it gradually weaken to stop
Only.So, probe unit is just responded to incident photon, and finally produces analog pulse signal.Each probe unit is produced
Analog pulse response signal superposition after Jing semiconductor optoelectronic multiplexers signal end output.Compared to traditional radio tube
Detection Techniques, when semiconductor optoelectronic multiplexer has for example high internal gain of many excellent specific properties, single photon responding ability and high speed
Between response characteristic, the compatible and good mechanical performance in low-work voltage and excellent magnetic field so as to be widely used in core doctor
The numerous areas of the national economy such as detection, industry monitoring, Homeland Security are learned, are analyzed, is the developing direction of following photodetector,
With huge application prospect.
In the application type selecting of semiconductor optoelectronic multiplier device, the detection efficient and time response of device are two needs spy
The important performance characteristic not considered.Detection efficient refers to that photon is incided on photodetector, the absorption of Jing photodetectors, turn
Change and amplify, and the probability of the useful electrical signal of final output, the photon number for generally being obtained with detector detection and incidence
Total photon number between ratio representing, it reflects sensitivity of the detector to incident photon.For semiconductor light
For electric multiplexer, the quantum efficiency main with semi-conducting material of detection efficient, the probability that avalanche multiplication occurs and device
Fill factor, curve factor is relevant, can be represented simply as:
PDE=∈ (λ) Pb(V)·F.
In formula, PDE is detection efficient, and ∈ (λ) is quantum efficiency, Pb(V) represent avalanche multiplication probability, F represent filling because
Son.Wherein, ∈ (λ) is the physical quantity related to wavelength, Pb(V) be the physical quantity related to running voltage, both this with it is concrete
Applied environment it is related.Fill factor, curve factor F is the ratio of the effective photosensitive area on photodetector test surface and total detection area.
It is mutually isolated due to needing between each probe unit in semiconductor optoelectronic multiplexer, and resistance, metal electrode, metal is quenched
Interconnection line and the non-probe unit of other functions are required for occupying certain detection area, so fill factor, curve factor is also in very great Cheng
The detection efficient of photodetector is determined on degree.
The time response of semiconductor optoelectronic multiplexer is defined by two time constants, i.e., the rising of analog pulse signal when
Between and recovery time.Rise time is defined as the discharge time of avalanche photodide junction capacity, generally in hundreds of psec to several
Nanosecond order；It is defined as recovery time by external circuit, the time that resistance charges to avalanche photodide junction capacity is quenched,
According to avalanche photodide size and be quenched resistance it is of different sizes generally tens to hundreds of nanosecond order.Semiconductor optoelectronic
The time response of the analog pulse of multiplexer output is applied to the temporal resolution that meets of system large effect, longer
Rise time, can cause poor to meet temporal resolution.Application such as laser ranging in semiconductor optoelectronic multiplexer, when
Between in the system such as flight positron emission tomography, the conversion speed of photosignal is extremely important.And the longer rise time
With the conversion speed that recovery time can seriously slow down photosignal, to semiconductor optoelectronic multiplexer the quick application for exporting is being needed
Bring huge restriction in field.
Generally, the method for improving the time response of semiconductor optoelectronic multiplexer is the knot electricity for reducing avalanche photodide
Hold, but need the optimization design that the structure to diode and doping carry out again, this undoubtedly increased the cost of design, and exist
Larger design risk.A kind of feasible scheme is that the overall capacitance of probe unit is reduced by the way of series capacitance, but
The electric capacity of series connection can occupy extra detection area, and the fill factor, curve factor for making device reduces, and then reduce the detection efficient of device.Cause
This, designs a kind of simple implementation to improve the time response of semiconductor optoelectronic multiplexer, and ensures its higher detection
Efficiency, the development to quasiconductor photomultiplier is significant.
Utility model content
This utility model aims to solve the problem that above technical problem, and provides a kind of novel semi-conductor photo multiplier device, to
Improve the time response of semiconductor optoelectronic multiplier device, and while keep its higher detection efficient.For achieving the above object, originally
Utility model provides following technical scheme：
A kind of probe unit of semiconductor optoelectronic multiplier device, it is characterised in that include：Semiconductor substrate；Positioned at described
The semiconductor epitaxial layers of the first conduction type on Semiconductor substrate, the epitaxial layer is provided with active area at surface,
Include the semiconductor region of the second conduction type and the quasiconductor ohmic contact regions of the first conduction type in the active area；It is described
The semiconductor region of the second conduction type is spaced with the quasiconductor ohmic contact regions of first conduction type, and described second leads
The semiconductor region of electric type constitutes PN junction structure with the semiconductor epitaxial layers of first conduction type；The PN junction structure is in device
Geiger mode angular position digitizer is in when part works；The first transparent dielectric layer on the semiconductor epitaxial layers of first conduction type,
Resistive layer is provided with first transparent dielectric layer；The resistive layer passes through gold with the semiconductor region of second conduction type
Category through hole connection, for the avalanche multiplication process of the PN junction structure to be quenched；On first transparent dielectric layer
Two transparent dielectric layers, are provided with the first metal layer and the first electrically conducting transparent pole plate in second transparent dielectric layer；Described first
Electrically conducting transparent pole plate is located at the surface of the PN junction structure；The first electrically conducting transparent pole plate and second conduction type
Semiconductor region is connected by metal throuth hole；The 3rd transparent dielectric layer on second transparent dielectric layer, the described 3rd
Second metal layer and the second electrically conducting transparent pole plate are provided with transparent dielectric layer；The second electrically conducting transparent pole plate is located at the PN
The surface of junction structure；The first electrically conducting transparent pole plate and the second electrically conducting transparent pole plate and transparent dielectric layer therebetween
Constitute transparent capacitive；ARC on the 3rd transparent dielectric layer, for reducing the reflection of incident illumination.
Preferably, the semiconductor protection ring structure of the second conduction type is provided with the active area, described second is conductive
The semiconductor protection ring structure of type be located at second conduction type semiconductor region periphery, and with second conductive-type
The semiconductor region of type contacts；The junction depth of the semiconductor protection ring structure of second conduction type is more than second conductive-type
The junction depth of the semiconductor region of type；The doping content of the semiconductor protection ring structure of second conduction type is led less than described second
The doping content of the semiconductor region of electric type；The semiconductor protection ring structure of second conduction type and first conductive-type
The quasiconductor ohmic contact regions of type are spaced.
Preferably, the resistive layer is high resistance polysilicon resistive layer of the square resistance more than 1K Ω/；Or thickness is less than
100nm, high-resistance metal thin film resistive layer of the square resistance more than 1K Ω/.
Preferably, the material of first conductive plate and the second conductive plate is tin indium oxide, zinc-gallium oxide, Indium sesquioxide.
One or more in zinc, Al-Doped ZnO, Graphene, metal nano material, composite conducting nano material；Described first is conductive
More than 10nm and less than 100nm, light transmission rate is more than 90% to the thickness of pole plate and the second conductive plate.
Preferably, the first metal layer and second metal layer are transparency conducting layer, its constituent material be tin indium oxide,
One kind or several in zinc-gallium oxide, indium zinc oxide, Al-Doped ZnO, Graphene, metal nano material, composite conducting nano material
Kind, and the thickness of the transparency conducting layer, more than 10nm and less than 100nm, light transmission rate is more than 90%.
Preferably, the material of the transparent dielectric layer is silicon dioxide.
Preferably, the material of the ARC is one or more in silicon nitride, silicon oxynitride, titanium nitride.
Based on above-mentioned probe unit, this utility model additionally provides a kind of semiconductor optoelectronic multiplier device, including such as front institute
The multiple probe units stated and metal pad, it is characterised in that：The metal pad is located on the 3rd transparent dielectric layer,
Its upper surface is not covered by the ARC, and is not overlapped in the vertical with arbitrary PN junction structure；It is the plurality of
Probe unit shares the quasiconductor ohmic contact regions of first conduction type, and quasiconductor ohm of first conduction type connects
Tactile area is connected by metal throuth hole with the first metal pad；The resistive layer not with the semiconductor region phase of second conduction type
One end of connection is mutually interconnected by the first metal layer, and is connected with the second metal pad by metal throuth hole；First weldering
Disk and the second pad provide bias voltage as power input interface for device；The second electrically conducting transparent pole plate passes through the second gold medal
Category layer is mutually interconnected, and is connected with the 3rd metal pad by metal throuth hole；3rd metal pad is used as the output of signal
Interface.
Preferably, it is provided between the probe unit and is optically isolated groove, it is described to be optically isolated in groove filled with light blocking material
Material.
The beneficial effects of the utility model are：
1. transparent capacitive is set on the photosurface of semiconductor optoelectronic multiplexer probe unit, can be used to reduce detection list
Unit and the integral capacitor of device, so as to improve the time response of semiconductor optoelectronic multiplexer, that is, reduce the rising of output signal
Time constant and constant recovery time.This not only can improve the conversion speed of semiconductor optoelectronic multiplexer photosignal, also may be used
Temporal resolution is met based on the application system of semiconductor optoelectronic multiplexer to improve.
2. transparent capacitive ensure that higher light transmission rate, and the extra electric capacity directly over probe unit does not make
Semiconductor photo detector loses extra detection area, which ensure that the higher detection efficient of semiconductor photo detector.
Description of the drawings
This utility model is further described below in conjunction with drawings and Examples, wherein：
Fig. 1 is the probe unit structural representation of the avalanche semiconductor multiplier device that this utility model is provided；
Fig. 2 is the probe unit structure of the avalanche semiconductor multiplier device with protection ring structure that this utility model is provided
Schematic diagram；
Fig. 3 is this utility model offer with the avalanche semiconductor multiplier device structural representation for being optically isolated groove.
In figure, the implication of each label is as follows：10-Semiconductor substrate；The semiconductor epitaxial layers of 20-the first conduction types；21–
The semiconductor region of the second conduction type；The quasiconductor ohmic contact regions of 22-the first conduction types；The half of 23-the second conduction types
Conductor protects ring structure；24-it is optically isolated groove；30-the first transparent dielectric layers；31-resistive layer；40-the second transparent dielectric layers；
41- the first electrically conducting transparent pole plates；42-the first metal layer；50-the three transparent dielectric layers；51-the second electrically conducting transparent pole plates；52-the
Two metal levels；60-ARC；61-the first metal pads；62-the second metal pads；63-the three metal pads；70-gold
Category through hole.
Specific embodiment
As shown in Figure 1, the probe unit of a kind of avalanche semiconductor multiplier device that this utility model is provided, including partly leading
Body substrate 10；The semiconductor epitaxial layers 20 of the first conduction type on the Semiconductor substrate 10, the epitaxial layer is leaned on
Active area is provided near surface, the conduction type of semiconductor region 21 and first of the second conduction type is included in the active area
Quasiconductor ohmic contact regions 22；The quasiconductor Europe of the semiconductor region 21 of second conduction type and first conduction type
Nurse contact area 22 is spaced, the semiconductor epitaxial of the semiconductor region 21 of second conduction type and first conduction type
Layer 20 constitutes PN junction structure；The PN junction structure is in Geiger mode angular position digitizer when device works；Positioned at first conduction type
The first transparent dielectric layer 30 on semiconductor epitaxial layers 20, in first transparent dielectric layer 30 resistive layer 31 is provided with；Institute
State resistive layer 31 to be connected by metal throuth hole 70 with the semiconductor region 21 of second conduction type, for the PN junction knot to be quenched
The avalanche multiplication process of structure；The second transparent dielectric layer 40 on first transparent dielectric layer 30, described second is transparent
The electrically conducting transparent pole plate 41 of the first metal layer 42 and first is provided with dielectric layer 40；The first electrically conducting transparent pole plate 41 is located at institute
State the surface of PN junction structure；The first electrically conducting transparent pole plate 41 passes through gold with the semiconductor region 21 of second conduction type
Category through hole 70 connects；The 3rd transparent dielectric layer 50 on second transparent dielectric layer 40, the 3rd transparent medium
The electrically conducting transparent pole plate 51 of second metal layer 52 and second is provided with layer 50；The second electrically conducting transparent pole plate 51 is located at the PN
The surface of junction structure；The first electrically conducting transparent pole plate 41 and the second electrically conducting transparent pole plate 51 and transparent Jie therebetween
Matter layer constitutes transparent capacitive；ARC 60 on the 3rd transparent dielectric layer 50, for reducing incident illumination
Reflection.
The present embodiment is reducing the overall capacitance of probe unit by way of using additional electric capacity.Due to what is introduced
Electric capacity is transparent capacitive, it is ensured that incident illumination has higher absorbance, thus will not reduce the incidence loss of incident illumination；Together
When, because the transparent capacitive is located at the surface of probe unit, extra detection area is not occupied by, thus will not reduce partly
The fill factor, curve factor of conductor avalanche photodetector.Above-mentioned both sides reason ensure that the quasiconductor snow that this utility model is proposed
Collapsing photodetector can not lose its high detection efficient on the premise of device time performance is improved.
As shown in Figure 2, in order to further optimize the performance parameter of semiconductor optoelectronic multiplexer, this utility model is also provided
A kind of probe unit with protection ring structure.It is specifically configured to：The half of the second conduction type is provided with the active area
Conductor protects ring structure 23, the semiconductor protection ring structure 23 of second conduction type to be located at the half of second conduction type
The periphery of conductor region 21, and contact with the semiconductor region 21 of second conduction type；Second conduction type is partly led
Junction depth of the junction depth of body protection ring structure 23 more than the semiconductor region 21 of second conduction type；Second conduction type
Doping content of the doping content of semiconductor protection ring structure 23 less than the semiconductor region 21 of second conduction type；Described
The semiconductor protection ring structure 23 of two conduction types is spaced with the quasiconductor ohmic contact regions 22 of first conduction type.
The semiconductor protection ring structure 23 of the second set conduction type can make the internal electric field point of the PN junction structure of probe unit
Cloth is more uniform, and uniform Electric Field Distribution also can to a certain extent improve the time response of detector.
In semiconductor optoelectronic multiplier device, the resistance of resistance is quenched generally between a few K Ω to a few M Ω.High value
Resistance needs longer resistance length, and resistance can occupy certain detection area as the non-detecting structure of feature, and this can drop
The fill factor, curve factor of low device.Therefore the area being quenched occupied by resistance is the smaller the better.It is described in this utility model based on this
Resistive layer 31 is set to high resistance polysilicon resistive layer of the square resistance more than 1K Ω/；Or thickness is set to less than 100nm, side
High-resistance metal thin film resistive layer of the block resistance more than 1K Ω/.
For the transparent capacitive in this utility model, the material of the conductive plate 51 of first conductive plate 41 and second is
In tin indium oxide, zinc-gallium oxide, indium zinc oxide, Al-Doped ZnO, Graphene, metal nano material, composite conducting nano material
One or more；The thickness of the conductive plate 51 of first conductive plate 41 and second is more than 10nm and less than 100nm, and light is saturating
Rate is crossed more than 90%.
For the light loss for further reducing incident illumination, the first metal layer 42 and second metal layer 52 are electrically conducting transparent
Layer, its constituent material is tin indium oxide, zinc-gallium oxide, indium zinc oxide, Al-Doped ZnO, Graphene, metal nano material, compound
One or more in electrical-conductive nanometer material, and the thickness of the transparency conducting layer is more than 10nm and less than 100nm, light transmission rate
More than 90%；The material of the transparent dielectric layer 30,40 and 50 is silicon dioxide.
Further, the material of the ARC is one or more in silicon nitride, silicon oxynitride, titanium nitride,
For ensureing that detector has higher absorbance to light.
As shown in Figure 3, the invention also discloses a kind of semiconductor optoelectronic multiplier device, including foregoing many
Individual probe unit and metal pad 61,62 and 63, it is characterised in that：The metal pad 61,62 and 63 is respectively positioned on the described 3rd
On transparent dielectric layer 50, its upper surface is not covered by the ARC 60, and with arbitrary PN junction structure in longitudinal direction
On do not overlap；The quasiconductor ohmic contact regions 22 of shared first conduction type of the plurality of probe unit, described first
The quasiconductor ohmic contact regions 22 of conduction type are connected by metal throuth hole 70 with the first metal pad 61；The resistive layer 31 is not
The one end being connected with the semiconductor region 21 of second conduction type is mutually interconnected by the first metal layer 42, and by metal
Through hole 70 connects with the pad of the second metal 62；First pad 61 is carried as power input interface with the second pad 62 for device
For bias voltage；The second electrically conducting transparent pole plate 51 is mutually interconnected by second metal layer 52, and by metal throuth hole 70 with
3rd metal pad 63 connects；3rd metal pad 63 is used as the output interface of signal.
To reduce the optical crosstalk of semiconductor optoelectronic multiplier device, its performance is further improved, between the probe unit
It is provided with and is optically isolated groove 24, it is described to be optically isolated in groove 24 filled with light blocking material.
Above-described embodiment is it will be appreciated that and using this utility model for ease of those skilled in the art
Description.Person skilled in the art obviously easily can make various modifications to these embodiments, and here is said
Bright General Principle is applied in other embodiment without through performing creative labour.Therefore, this utility model is not limited to
State embodiment, those skilled in the art according to announcement of the present utility model, without departing from the improvement that this utility model category is made
All should be within protection domain of the present utility model with modification.
Claims (9)
1. a kind of probe unit of semiconductor optoelectronic multiplier device, it is characterised in that include：
Semiconductor substrate；
The semiconductor epitaxial layers of the first conduction type on the Semiconductor substrate, the epitaxial layer sets at surface
Active area is equipped with, the semiconductor region of the second conduction type and quasiconductor ohm of the first conduction type are included in the active area
Contact area；The semiconductor region of second conduction type is mutual with the quasiconductor ohmic contact regions of first conduction type
Every the semiconductor region of second conduction type constitutes PN junction structure with the semiconductor epitaxial layers of first conduction type；Institute
State PN junction structure and Geiger mode angular position digitizer is in when device works；
The first transparent dielectric layer on the semiconductor epitaxial layers of first conduction type, first transparent dielectric layer
In be provided with resistive layer；The resistive layer is connected with the semiconductor region of second conduction type by metal throuth hole, for quenching
The avalanche multiplication process of the PN junction structure of going out；
The second transparent dielectric layer on first transparent dielectric layer, in second transparent dielectric layer first is provided with
Metal level and the first electrically conducting transparent pole plate；The first electrically conducting transparent pole plate is located at the surface of the PN junction structure；Described
One electrically conducting transparent pole plate is connected with the semiconductor region of second conduction type by metal throuth hole；
The 3rd transparent dielectric layer on second transparent dielectric layer, in the 3rd transparent dielectric layer second is provided with
Metal level and the second electrically conducting transparent pole plate；The second electrically conducting transparent pole plate is located at the surface of the PN junction structure；Described
One electrically conducting transparent pole plate and the second electrically conducting transparent pole plate and transparent dielectric layer therebetween constitute transparent capacitive；
ARC on the 3rd transparent dielectric layer, for reducing the reflection of incident illumination.
2. the probe unit of a kind of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that described active
The semiconductor protection ring structure of the second conduction type, the semiconductor protection ring structure position of second conduction type are provided with area
In the periphery of the semiconductor region of second conduction type, and contact with the semiconductor region of second conduction type；It is described
Junction depth of the junction depth of the semiconductor protection ring structure of the second conduction type more than the semiconductor region of second conduction type；It is described
Doping of the doping content of the semiconductor protection ring structure of the second conduction type less than the semiconductor region of second conduction type
Concentration；The quasiconductor ohmic contact regions phase of the semiconductor protection ring structure of second conduction type and first conduction type
Mutually it is spaced.
3. a kind of probe unit of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that the resistance
High resistance polysilicon resistive layer of the layer for square resistance more than 1K Ω/；Or thickness is less than 100nm, square resistance is more than 1K Ω/
High-resistance metal thin film resistive layer.
4. the probe unit of a kind of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that described first
The material of conductive plate and the second conductive plate is tin indium oxide, zinc-gallium oxide, indium zinc oxide, Al-Doped ZnO, Graphene, gold
One or more in metal nanometer material, composite conducting nano material；The thickness of first conductive plate and the second conductive plate
More than 10nm and less than 100nm, light transmission rate is more than 90% to degree.
5. the probe unit of a kind of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that described first
Metal level and second metal layer are transparency conducting layer, and its constituent material is tin indium oxide, zinc-gallium oxide, indium zinc oxide, mixes aluminum
One or more in Zinc Oxide, Graphene, metal nano material, composite conducting nano material, and the transparency conducting layer
More than 10nm and less than 100nm, light transmission rate is more than 90% to thickness.
6. the probe unit of a kind of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that described transparent
The material of dielectric layer is silicon dioxide.
7. a kind of probe unit of semiconductor optoelectronic multiplier device according to claim 1, it is characterised in that the anti-reflective
The material for penetrating coating is one or more in silicon nitride, silicon oxynitride, titanium nitride.
8. a kind of semiconductor optoelectronic multiplier device, including multiple probe units and metal as described in any one of claim 1 to 7
Pad, it is characterised in that：
The metal pad is located on the 3rd transparent dielectric layer, and its upper surface is not covered by the ARC, and
Do not overlap in the vertical with arbitrary PN junction structure；
The plurality of probe unit shares the quasiconductor ohmic contact regions of first conduction type, first conduction type
Quasiconductor ohmic contact regions are connected by metal throuth hole with the first metal pad；
One end that the resistive layer is not connected with the semiconductor region of second conduction type is mutually mutual by the first metal layer
Even, and connected with the second metal pad by metal throuth hole；First pad is as power input interface with the second pad
Device provides bias voltage；
The second electrically conducting transparent pole plate is mutually interconnected by second metal layer, and by metal throuth hole and the 3rd metal pad phase
Connect；3rd metal pad is used as the output interface of signal.
9. a kind of semiconductor optoelectronic multiplier device according to claim 8, it is characterised in that set between the probe unit
It is equipped with and is optically isolated groove, it is described to be optically isolated in groove filled with light blocking material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620870780.XU CN206134700U (en) | 2016-08-12 | 2016-08-12 | Semiconductor photomultiplier spare |
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| CN201620870780.XU CN206134700U (en) | 2016-08-12 | 2016-08-12 | Semiconductor photomultiplier spare |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129169A (en) * | 2016-08-12 | 2016-11-16 | 武汉京邦科技有限公司 | A kind of semiconductor optoelectronic multiplier device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129169A (en) * | 2016-08-12 | 2016-11-16 | 武汉京邦科技有限公司 | A kind of semiconductor optoelectronic multiplier device |
| CN106129169B (en) * | 2016-08-12 | 2024-07-02 | 武汉锐光科技有限公司 | Semiconductor photomultiplier |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Semiconductor photomultiplier device Effective date of registration: 20170913 Granted publication date: 20170426 Pledgee: Ezhou City Tatsu Tatsu Asset Management Co., Ltd. Pledgor: WUHAN JOINBON TECHNOLOGY CO., LTD. Registration number: 2017420000029 |
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