CN201181704Y - LED packaging structure and distant range irradiation structure including the same - Google Patents
LED packaging structure and distant range irradiation structure including the same Download PDFInfo
- Publication number
- CN201181704Y CN201181704Y CNU2008200049817U CN200820004981U CN201181704Y CN 201181704 Y CN201181704 Y CN 201181704Y CN U2008200049817 U CNU2008200049817 U CN U2008200049817U CN 200820004981 U CN200820004981 U CN 200820004981U CN 201181704 Y CN201181704 Y CN 201181704Y
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- China
- Prior art keywords
- support
- colloid
- radiating block
- wafer
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000084 colloidal system Substances 0.000 claims abstract description 33
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 17
- 238000001746 injection moulding Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 4
- 229920006335 epoxy glue Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 16
- 239000003292 glue Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000010586 diagram Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 101150095744 tin-9.1 gene Proteins 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to an LED seal structure and a remote irradiation structure which comprises the LED seal structure. The LED seal structure includes the heat radiating block of a bracket; a bracket pin is led out at one side of the heat radiating block of the bracket; the heat radiating block of the bracket and the bracket pin are combined with a colloid through injection; a depressed part is formed after the colloid is combined with the heat radiating block of the bracket and the bracket pin through connection; a wafer is arranged in the depressed part and is connected on the bracket pin through a lead; a silicon glue layer or fluorescent powder mixed glue layer is filled and sealed in the depressed part so as to seal the wafer; the remote irradiation structure is based on the LED seal structure to form an outer step on the outside of the colloid; a collector lens is arranged on the outer step of the colloid to carry out light collecting on the beams given out by LED. The LED seal structure has a low cost and a good heat radiating performance. The remote irradiation structure leads the LED seal structure to be matched with the collector lens, thus being capable of achieving a remote irradiation effect and having a good practicability.
Description
Technical field
The utility model relates to the LED encapsulation field, specifically, relates to the good LED encapsulating structure of a kind of heat dispersion and comprises the telecurie irradiation structure of this LED encapsulating structure.
Background technology
At present, LED encapsulating structure commonly used is to form bowl portion (see figure 1) on a metallic support 2, described bowl portion is built-in with wafer 1, and be provided with each power pin of anode and cathode, connect a lead 3 to anode from wafer 1, again two power pins are welded on the solder joint 4 of circuit board 5 through sealing glue up for safekeeping.The known direct plug-in type light emitting diode of this kind is because it only utilizes an anode supply pin heat radiation, so radiating effect extreme difference, because the good and bad degree of radiating effect is directly proportional with luminous efficiency, so the direct plug-in type light emitting diode usually causes luminous efficiency low because of the radiating effect difference, luminescent lifetime is short, can not be durable in use, and this kind LED encapsulating structure does not have the telecurie irradiation effect.
The utility model content
A purpose of the present utility model is to overcome the technical deficiency that existing LED encapsulating structure radiating effect is poor, luminescent lifetime short, can not light lastingly, provides that a kind of cost is low, the LED encapsulating structure of perfect heat-dissipating.
For achieving the above object, the technical solution of the utility model is: a kind of LED encapsulating structure, this LED encapsulating structure comprise,
One support radiating block, described support radiating block one side is extended at least two support pins, the thickness of these a plurality of support pins is thinner than support radiating block, the bottom injection moulding of the top of described support radiating block and support pin is combined with colloid, colloid combines the back and forms a depressed part with support radiating block and the injection moulding of support pin, and in conjunction with after support radiating block bottom and support pin expose to outside the colloid;
At least one wafer, described each wafer are arranged at colloid and combine with support radiating block and the injection moulding of support pin in the depressed part of back formation, and each wafer is connected on each support pin through lead respectively;
Layer of silica gel or fluorescent material mixing glue-line, embedding in described depressed part so that wafer is sealed.
The support bending pins of the outer side of described colloid is parallel with support radiating block bottom.
Step in described colloid forms with the depressed part after support radiating block and support pin combine is inner, the layer of silica gel of embedding or fluorescent material epoxy glue layer thickness flush with described interior step.
When described wafer surpassed one, each wafer was the setting of connecting with each support pin.
When described wafer surpassed one, each wafer and each support pin were for being arranged in parallel.
The described outer support radiating block bottom of colloid that exposes to is provided with thermal paste, and this thermal paste bottom surface is engaged on the wiring board.
The described outer support bending pins of colloid that exposes to is engaged on the wiring board.
Another purpose of the present utility model is, overcomes the defective that existing encapsulating structure can not be accomplished the telecurie irradiation effect, and a kind of telecurie irradiation structure of the LED of comprising encapsulating structure is provided.
For achieving the above object, the technical solution of the utility model is: a kind of telecurie irradiation structure that comprises above-mentioned LED encapsulating structure, this telecurie irradiation structure is on the basis of above-mentioned LED encapsulating structure, step outside the outside formation of described colloid, one collector lens places on the outer step of described colloid, described collector lens is to be formed centrally a sunken inside portion in the horn mouth of horn mouth shape and this collector lens, one sunken inside portion is also formed on this collector lens bottom, the outside outer step tight fit that forms of this sunken inside portion and colloid also forms convex lens in the bottom of this portion of caving in.
The beneficial effect of this use new LED encapsulating structure is: (1) support pin and support radiating block are integral structure, and colloid combines with support radiating block and the injection moulding of support pin, thereby have simplified manufacturing process, have reduced production cost; (2) area of dissipation of support radiating block is bigger, and the bottom surface can contact more in large area with other radiating block, so have fabulous radiating effect.
The beneficial effect of telecurie irradiation structure of the present utility model is: an external collector lens on the LED encapsulating structure, by this collector lens the light that LED launched is carried out optically focused, make it can shine farther distance, and can change lighting angle by the angle that changes collector lens, use comparatively convenient and practical.
Description of drawings
Fig. 1 is the schematic diagram of traditional LED encapsulating structure;
Fig. 2 is the sectional view that the utility model comprises the telecurie irradiation structure of LED encapsulating structure;
Fig. 3 a is the sectional view of the utility model LED encapsulating structure;
Fig. 3 b is the floor map of a kind of embodiment of the utility model LED encapsulating structure;
Fig. 4 a is the floor map of the another kind of embodiment of the utility model LED encapsulating structure;
Fig. 4 b is a kind of embodiment user mode schematic diagram of the utility model LED encapsulating structure;
Fig. 5 a is the another kind of embodiment user mode schematic diagram of the utility model LED encapsulating structure;
Fig. 5 b is the another kind of embodiment user mode schematic diagram of the utility model LED encapsulating structure.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is described further.
Fig. 3 a is the sectional view of the utility model LED encapsulating structure, and LED encapsulating structure of the present utility model comprises: support radiating block 2, wafer 3, layer of silica gel or fluorescent material mixing glue-line 5.
Shown in Fig. 3 b and Fig. 4 a, 21 at least two of support pins are preferably three herein, comprise support pin 21a, support pin 21b, support pin 21c, support pin 21a and support radiating block 2 are one, and support pin 21b, support pin 21c and support radiating block 2 disconnect.But this high-power LED encapsulation structure reserved category is like the big radiating block 24 and the long pin (as Fig. 3 b) of large power triode, for easy for installation, also can be to big radiating block 24 excisions, and long pin is bent to form kink 22 by mould to it, kink 22 and support radiating block 2 bottoms are 23 parallel (as Fig. 3 a and Fig. 4 a), certainly, the support pin also can be for more than three.
A wafer 3 (can be many wafers 3), being arranged at colloid 1 combines with support radiating block 2 and 21 injection mouldings of support pin in the depressed part 11 of back formation, wafer 3 is connected on the support pin 21c through lead 4, and the connected mode of wafer 3 and support pin 21c is shown in Fig. 4 b at this moment.If during two wafers, the connected mode of wafer 3 and support pin can be shown in Fig. 5 a and Fig. 5 b shown in being connected in parallel, when special instructions for use, also can be the mode (not shown) that is connected in series.If during the wafer more than two, its connected mode is similar to the above-mentioned mode class that is connected in parallel or is connected in series, and just seldom does narration at this.
Layer of silica gel or fluorescent material mixing glue-line 5, embedding in depressed part 11 with to wafer 3 sealing, by the effect control layer of silica gel of interior step 12 or the glue amount of fluorescent material mixing glue-line 5, the layer of silica gel or fluorescent material mixing glue-line 5 thickness of embedding are flushed with interior step 12, because the radiating effect of silica gel and fluorescent material epoxy glue is than the radiating effect of epoxy resin, by this, can improve the radiating effect of this LED encapsulating structure.
In order further to improve radiating effect, these support radiating block 2 bottoms 23 and the kink 22 that exposes to colloid support arm pin 21 are engaged on the wiring board 8 (this wiring board is the aluminium heating panel preferably), in order to heat radiation; In addition, can thermal paste 7 be set in these support radiating block 2 bottoms 23, these thermal paste 7 bottom surfaces are engaged on the wiring board 8, and support pin 21 is connected on the wiring board 8, in order to quick heat radiating by scolding tin 9.
In order to make this LED encapsulating structure have the telecurie irradiation effect, the utility model also on the basis of this LED encapsulating structure, provides a kind of telecurie irradiation structure, and its embodiment as shown in Figure 2.
The utility model rate LED encapsulating structure has excellent radiating effect, has also simplified procedure for producing, has reduced production cost; The telecurie irradiation structure of the utility model rate cooperates the LED encapsulating structure with collector lens, can reach the telecurie irradiation effect, and practicality is good.
Being the utility model preferred embodiment only in sum, is not to be used for limiting practical range of the present utility model.Be that all equivalences of doing according to the content of the utility model claim change and modification, all should belong to technology category of the present utility model.
Claims (8)
1, a kind of LED encapsulating structure is characterized in that: comprise
One support radiating block, described support radiating block one side is extended at least two support pins, the thickness of these a plurality of support pins is thinner than support radiating block, the bottom injection moulding of the top of described support radiating block and support pin is combined with colloid, colloid combines the back and forms a depressed part with support radiating block and the injection moulding of support pin, and in conjunction with after support radiating block bottom and support pin expose to outside the colloid;
At least one wafer, described each wafer are arranged at colloid and combine with support radiating block and the injection moulding of support pin in the depressed part of back formation, and each wafer is connected on each support pin through lead respectively;
Layer of silica gel or fluorescent material mixing glue-line, embedding in described depressed part so that wafer is sealed.
2, LED encapsulating structure according to claim 1 is characterized in that, the support bending pins of the outer side of described colloid is parallel with support radiating block bottom.
3, LED encapsulating structure according to claim 1 is characterized in that, step in described colloid forms with the depressed part after support radiating block and support pin combine is inner, and the layer of silica gel of embedding or fluorescent material epoxy glue layer thickness flush with described interior step.
4, LED encapsulating structure according to claim 1 is characterized in that, when described wafer surpassed one, each wafer was the setting of connecting with each support pin.
5, LED encapsulating structure according to claim 1 is characterized in that, when described wafer surpassed one, each wafer and each support pin were for being arranged in parallel.
6, LED encapsulating structure according to claim 1 is characterized in that, the described outer support radiating block bottom of colloid that exposes to is provided with thermal paste, and this thermal paste bottom surface is engaged on the wiring board.
7, LED encapsulating structure according to claim 1 is characterized in that, the described outer support bending pins of colloid that exposes to is engaged on the wiring board.
8, a kind of telecurie irradiation structure that comprises above-mentioned any described LED encapsulating structure of claim, it is characterized in that: step outside the outside formation of described colloid, one collector lens places on the outer step of described colloid, described collector lens is to be formed centrally a sunken inside portion in the horn mouth of horn mouth shape and this collector lens, one sunken inside portion is also formed on this collector lens bottom, the outside outer step tight fit that forms of this sunken inside portion and colloid also forms convex lens in the bottom of this portion of caving in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200049817U CN201181704Y (en) | 2008-03-18 | 2008-03-18 | LED packaging structure and distant range irradiation structure including the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200049817U CN201181704Y (en) | 2008-03-18 | 2008-03-18 | LED packaging structure and distant range irradiation structure including the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201181704Y true CN201181704Y (en) | 2009-01-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200049817U Expired - Fee Related CN201181704Y (en) | 2008-03-18 | 2008-03-18 | LED packaging structure and distant range irradiation structure including the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201181704Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI413742B (en) * | 2010-02-09 | 2013-11-01 | Ambrite Internation Co | With the promotion of luminous and thermal efficiency of the light-emitting diode structure and its LED lamps |
| CN108777264A (en) * | 2018-05-29 | 2018-11-09 | 北京敬科技有限公司 | A kind of semiconductor diode chip encapsulating structure and preparation method thereof |
| CN112087891A (en) * | 2020-09-17 | 2020-12-15 | 厦门华联电子股份有限公司 | Glue pouring groove, glue pouring height detection system and detection method |
-
2008
- 2008-03-18 CN CNU2008200049817U patent/CN201181704Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI413742B (en) * | 2010-02-09 | 2013-11-01 | Ambrite Internation Co | With the promotion of luminous and thermal efficiency of the light-emitting diode structure and its LED lamps |
| CN108777264A (en) * | 2018-05-29 | 2018-11-09 | 北京敬科技有限公司 | A kind of semiconductor diode chip encapsulating structure and preparation method thereof |
| CN108777264B (en) * | 2018-05-29 | 2019-06-07 | 东莞市鸿日电子有限公司 | A kind of semiconductor diode chip encapsulating structure |
| CN112087891A (en) * | 2020-09-17 | 2020-12-15 | 厦门华联电子股份有限公司 | Glue pouring groove, glue pouring height detection system and detection method |
| CN112087891B (en) * | 2020-09-17 | 2021-08-24 | 厦门华联电子股份有限公司 | Method for detecting glue filling height |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shenzhen Chengguangxing Industrial Development Co., Ltd. Assignor: Peng Hongcun Contract fulfillment period: 2009.8.18 to 2016.8.17 Contract record no.: 2009440001396 Denomination of utility model: LED packaging structure and distant range irradiation structure including the same Granted publication date: 20090114 License type: Exclusive license Record date: 20090904 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.8.18 TO 2016.8.17; CHANGE OF CONTRACT Name of requester: SHENZHEN CHENGGUANGXING INDUSTRIAL DEVELOPMENT CO. Effective date: 20090904 |
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| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN CHENGGUANGXING INDUSTRIAL DEVELOPMENT CO. Free format text: FORMER OWNER: PENG HONGCUN Effective date: 20140109 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 466600 ZHOUKOU, HENAN PROVINCE TO: 518109 SHENZHEN, GUANGDONG PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20140109 Address after: 518109 Guangdong city of Shenzhen province Baoan District Longhua Pine Village Pelton Industrial Zone No. 2 three or four floor Patentee after: Shenzhen Chengguangxing Industrial Development Co., Ltd. Address before: 466600, Xihua County, Henan Province, No. 1531, North Shanhaiguan Road Patentee before: Peng Hongcun |
|
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN CHENGGUANGXING PHOTOELECTRIC TECHNOLOGY C Free format text: FORMER NAME: SHENZHEN CHENGGUANGXING INDUSTRIAL DEVELOPMENT CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 518000 Guangdong Province, Shenzhen city Longhua District Guanlan Pavilion East Village Community chapter chapter Gelao No. 168 (PO view science and Technology Park building B) Patentee after: SHENZHEN CGX OPTOELECTRONIC TECHNOLOGY, INC. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Pine Village Pelton Industrial Zone No. 2 three or four floor Patentee before: Shenzhen Chengguangxing Industrial Development Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20170318 |