CN1955239A - Chemical mechanical polishing material of copper - Google Patents
Chemical mechanical polishing material of copper Download PDFInfo
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- CN1955239A CN1955239A CNA2005100308704A CN200510030870A CN1955239A CN 1955239 A CN1955239 A CN 1955239A CN A2005100308704 A CNA2005100308704 A CN A2005100308704A CN 200510030870 A CN200510030870 A CN 200510030870A CN 1955239 A CN1955239 A CN 1955239A
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- chemical mechanical
- mechanical polishing
- polishing slurry
- acid
- polyacrylic
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- 238000005498 polishing Methods 0.000 title claims abstract description 68
- 239000000126 substance Substances 0.000 title claims abstract description 47
- 239000010949 copper Substances 0.000 title claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title description 3
- 239000002002 slurry Substances 0.000 claims abstract description 49
- 229920002125 Sokalan® Polymers 0.000 claims abstract description 16
- 239000004584 polyacrylic acid Substances 0.000 claims abstract description 14
- 229920001577 copolymer Polymers 0.000 claims abstract description 11
- 239000006061 abrasive grain Substances 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 10
- -1 phospho Chemical class 0.000 claims description 10
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 9
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 8
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 229940070721 polyacrylate Drugs 0.000 claims description 4
- 229920001444 polymaleic acid Polymers 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical group [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 159000000000 sodium salts Chemical class 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004160 Ammonium persulphate Substances 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004159 Potassium persulphate Substances 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019395 ammonium persulphate Nutrition 0.000 claims description 2
- 239000011324 bead Substances 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000002950 deficient Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
This invention discloses cupric chemical mechanical polishing slurry. It includes grinding particle, organic phosphonic acid, polyacrylic acid series and/or its copolymer, oxidant and carrier. This chemical mechanical polishing slurry will prevent metal material from local or total corrosion, and it will reduce the pollutant on substrate surface and cut down the content of grinding particle. It also will improve the removal rate of tantalum and cut down the removal rate of copper to obtain polishing choices of different bases.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing slurry, relate in particular to a kind of chemical mechanical polishing slurry of copper.
Background technology
Development along with microelectronics, the very large scale integration chip integration has reached tens components and parts, characteristic dimension has entered nano level, and this just requires hundreds of procedure, especially multilayer wiring, substrate, medium in the microelectronic technique must pass through chemical-mechanical planarization.Very extensive integrated routing is just transformed to Cu by traditional Al.Compare with Al, it is low that the Cu wiring has resistivity, deelectric transferred energy rate height, and RC is short time of lag, can make the cloth number of plies reduce half, and cost reduces by 30%, shortens 40% advantage process period.The advantage of Cu wiring has caused that the whole world pays close attention to widely.
But also copper material is not carried out plasma etching or wet etching effectively at present, so that the public office technology that copper-connection fully forms in unicircuit, so the cmp method of copper is considered to the most effective alternative method.The principle of work of the cmp method of copper generally is to remove copper a large amount of on the substrate surface with removing speed soon and efficiently earlier, soft landing when soon near the blocking layer, and reduction is removed speed and is polished remaining metallic copper (see figure 1).At present, a series of chemical mechanical polishing slurry that is suitable for polishing Cu has appearred, as: the patent No. is US 6,616, and 717 disclose a kind of composition and method that is used for metal CMP; The patent No. is US 5,527, and 423 disclose a kind of chemical mechanical polishing slurry that is used for metal level; The patent No. is US 6,821, and 897 disclose a kind of method of using the copper CMP of polymer complexing agent; The patent No. is that CN 02114147.9 discloses a kind of polishing liquid used in copper chemical mechanical polishing technology; The patent No. is the used slurry of chemically machinery polished that CN 01818940.7 discloses copper; The patent No. is that CN 98120987.4 discloses a kind of CMP slurries manufacturing of copper and manufacture method that is used for unicircuit of being used for.But the above-mentioned polishing slurries that is used for copper uses the back substrate surface to exist defective, scuffing, pickup and/or other is residual, or it is not enough to removing fast of copper, be that polishing selectivity is not enough, or exist problems such as part or general corrosion in the polishing process.Therefore be necessary to develop the chemical mechanical polishing slurry that is used for copper that makes new advances.
Summary of the invention
The objective of the invention is provides a kind of chemical mechanical polishing slurry of copper for above-mentioned the problems of the prior art, and the chemical mechanical polishing slurry of copper of the present invention can be removed a large amount of metallic coppers apace.
Above-mentioned purpose of the present invention realizes by following technical proposal: the chemical mechanical polishing slurry of copper of the present invention comprises abrasive grains, organic phospho acid, polyacrylic and/or its esters and/or polyacrylic acid analog copolymer, oxygenant and carrier.The chemical mechanical polishing slurry that contains organic phospho acid, polyacrylic and/or its esters and/or polyacrylic acid analog copolymer of the present invention has very high selectivity to copper in polishing process, and its surface has good roughness and lower residue, under lower abrasive grains content, also can guarantee the removal speed of higher copper simultaneously.
In a preferred embodiment of the present invention, the concentration of this abrasive grains is 0.5～5%, preferred 1～2%, the concentration of this organic phospho acid is 0.01～1%, the concentration of this polyacrylic and/or its esters and/or polyacrylic acid analog copolymer is 0.01～0.5%, the concentration of this oxygenant is 0.001～5%, and this carrier is a surplus, and above % all refers to account for the total weight percent of the chemical mechanical polishing slurry of whole copper.
In the present invention, described organic phospho acid can be various organic phospho acids, preferably is 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid (HEDP), Amino Trimethylene Phosphonic Acid (ATMP) and/or 2-HPAA (HPAA).
Described polyacrylic can be various polyacrylics, preferably be polyacrylic acid and/or polymaleic acid, described salt is sylvite, ammonium salt, sodium salt, calcium salt and/or other basic metal or alkaline earth salt, preferred sylvite, ammonium salt and/or sodium salt, described polyacrylic acid analog copolymer preferably is poly acrylic acid-poly acrylate copolymer and/or poly acrylic acid-poly maleic acid.
The molecular weight of described polyacrylic preferably is 1,000～20,000, more preferably is 2,000～5,000; The molecular weight of described polyacrylic acid analog copolymer preferably is 1,000～20,000, more preferably is 2,000～5,000.
Abrasive grains of the present invention can be various abrasive grains, preferably is silicon oxide, aluminum oxide, cerium oxide and/or polymer beads; The size of this abrasive grains preferably is 20～200nm, more preferably is 50～100nm.
Described oxygenant can be various oxygenants, preferably is hydrogen peroxide, Urea Peroxide, Peracetic Acid, benzoyl peroxide, Potassium Persulphate, ammonium persulphate and/or ammonium nitrate, preferred hydrogen peroxide.
In a preferred embodiment of the present invention, the pH value of this chemical mechanical polishing slurry can be 2.0～4.0, and used pH regulator agent can be potassium hydroxide, nitric acid, thanomin and/or trolamine or the like.
In the present invention, described carrier preferably is a water.
Chemical mechanical polishing slurry of the present invention can also comprise other additives, and as tensio-active agent, complexing agent and/or inhibitor or the like, these additives all can be with reference to prior art.
Positive progressive effect of the present invention is: chemical mechanical polishing slurry 1 of the present invention) can reduce the consumption of abrasive grains, make defective, scuffing, pickup and other residual obvious decline; 2) copper had very high polishing selectivity; 3) can prevent the part and the general corrosion that produce in the medal polish process, reduce the substrate surface pollutent, improve the product yield.
Description of drawings
Fig. 1 is the principle of work synoptic diagram of copper polish slurry in the prior art;
Fig. 2 is the surperficial microscope figure of the preceding blank copper wafer of polishing;
Fig. 3 is the surperficial microscope figure of the blank copper wafer in polishing back;
Fig. 4 is the SEM figure of polishing back copper line surface;
Fig. 5 is the AFM figure (5 * 5 microns zones) on testing wafer copper surface.
Embodiment
Embodiment 1～6
Table 1
| Embodiment | Abrasive grains | Organic phospho acid | H 2O 2 (wt％) | Polyacrylic, salt, multipolymer | pH | |||||
| Kind | Concentration (wt%) | Size (nm) | Kind | Concentration (wt%) | Kind | Molecular weight | Concentration (wt%) | |||
| 1 | SiO 2 | 2 | 70 | HEDP | 0.2 | 1 | PAN | 5000 | 0.2 | 3.0 |
| 2 | SiO 2 | 2 | 70 | HEDP | 0.2 | 1 | PAN | 5000 | 0.2 | 3.0 |
| 3 | SiO 2 | 1 | 70 | HEDP | 0.2 | 1 | PAN | 5000 | 0.2 | 3.0 |
| 4 | SiO 2 | 0.5 | 70 | HEDP | 0.2 | 1 | PAN | 5000 | 0.2 | 3.0 |
| 5 | CeO 2 | 5 | 200 | ATMP | 0.01 | 0.001 | PAA | 3500 | 0.5 | 2.0 |
| 6 | Al 2O 3 | 0.5 | 20 | HPAA | 1 | 5 | PAE | 2000 | 0.01 | 5.0 |
Remarks: HEDP: 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ATMP: Amino Trimethylene Phosphonic Acid, HPAA:2-HPAA; PAN: ammonium polyacrylate, PAA: polyacrylic acid, PAE: poly acrylic acid-poly acrylate copolymer; All the other compositions of above-mentioned chemical mechanical polishing slurry are water.
With each material in the following order: the deionized water of abrasive grains, half consumption, organic phospho acid, H
2O
2, polyacrylic and/or its multipolymer order add in the reactor successively and stir, mend all the other deionized waters, use pH regulator agent (20%KOH or rare HNO at last
3, select according to the needs of pH value) be adjusted to required pH value and continue to be stirred to uniform fluid, can obtain chemical mechanical polishing slurry in static 10 minutes.
Effect embodiment 1
The chemical mechanical polishing slurry of using the foregoing description 1～6 respectively is to blank Ta, Cu, SiO
2Wafer polishes, and polishing condition is identical, and burnishing parameters is as follows: Logitech. polishing pad, downward pressure 2psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, chemical mechanical polishing slurry flow velocity 100mL/min.Polish results sees Table 2.
Table 2
| Chemical mechanical polishing slurry | Ta | Cu | SiO 2 | |||
| Removal speed (/min) | Surf. | Removal speed (/min) | Surf. | Removal speed (/min) | Surf. | |
| Embodiment 1 | 245 | Do not have | 5383 | Do not have | 334 | Do not have |
| Embodiment 2 | 63 | Do not have | 6243 | Do not have | 81 | Do not have |
| Embodiment 3 | 192 | Do not have | 6185 | Do not have | 185 | Do not have |
| | 27 | Do not have | 6019 | Do not have | 27 | Do not have |
| Embodiment 5 | 226 | Few | 600 | Few | 385 | Do not have |
| Embodiment 6 | 45 | Few | 7500 | Do not have | 52 | Do not have |
Remarks: Surf. represents the pollutent situation of substrate surface.
The result shows: 1) with Ta and SiO
2Compare, chemical mechanical polishing slurry of the present invention has very high polishing selectivity to copper; 2) chemical mechanical polishing slurry of the present invention can reduce the consumption of abrasive grains, as the chemical mechanical polishing slurry of embodiment 4 content of abrasive grains is reduced to 0.5%, also can keep the removal speed of higher copper; 3) blank wafer surface no-pollution thing or the pollutent few (as shown in Figure 3) after the chemical mechanical polishing slurry of embodiment 1 polishing and compared (see figure 2) before the polishing, and the spot corrosion of the blank copper wafer surface after the polishing, corrosion obviously reduce, and improve the quality of products.
Effect embodiment 2
Chemical mechanical polishing slurry with embodiment 2,4 carries out polish copper to the silica wafers of sputter Ta blocking layer/electro-coppering respectively, stop when directly being polished to tantalum barrier layer, 2 groups of experiment polishing conditions are identical, burnishing parameters is as follows: the Logitech. polishing pad, downward pressure 2psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, chemical mechanical polishing slurry flow velocity 100mL/min.Polish results sees Table 3.
Table 3
| Chemical mechanical polishing slurry | Testing wafer depression in the surface size () | The pollutent situation on testing wafer surface |
| Embodiment 2 | 800 | Do not have |
| | 820 | Do not have |
The result shows: use chemical mechanical polishing slurry of the present invention can obviously reduce the size of testing wafer depression in the surface, reduce residue.Copper line surface after the polishing of the chemical mechanical polishing slurry of embodiment 4 does not have obvious pollutent (see figure 4), can prevent the part and the general corrosion that produce in the polishing process, and the roughness on copper sheet surface is less than the 0.3nm (see figure 5).
Conclusion: chemical mechanical polishing slurry 1 of the present invention) can reduce the consumption of abrasive grains, make defective, scuffing, pickup and other residual obvious decline; 2) copper had very high polishing selectivity; 3) can prevent the part and the general corrosion that produce in the medal polish process, reduce the substrate surface pollutent, improve the product yield.
The involved raw material of the foregoing description is commercially available.
Claims (12)
1, a kind of chemical mechanical polishing slurry of copper, it comprises abrasive grains, organic phospho acid, polyacrylic and/or its esters and/or polyacrylic acid analog copolymer, oxygenant and carrier.
2, chemical mechanical polishing slurry according to claim 1, the concentration that it is characterized in that this abrasive grains is 0.5～5%, the concentration of this organic phospho acid is 0.01～1%, the concentration of this polyacrylic and/or its esters and/or polyacrylic acid analog copolymer is 0.01～0.5%, the concentration of this oxygenant is 0.001～5%, and this carrier is a surplus.
3, chemical mechanical polishing slurry according to claim 1 is characterized in that described organic phospho acid is 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, Amino Trimethylene Phosphonic Acid and/or 2-HPAA.
4, chemical mechanical polishing slurry according to claim 1, it is characterized in that described polyacrylic is polyacrylic acid and/or polymaleic acid, described salt is sylvite, ammonium salt and/or sodium salt, and described polyacrylic acid analog copolymer is poly acrylic acid-poly acrylate copolymer and/or poly acrylic acid-poly maleic acid.
5, according to each described chemical mechanical polishing slurry of claim 1～4, the molecular weight that it is characterized in that described polyacrylic is 1,000～20,000; The molecular weight of described polyacrylic acid analog copolymer is 1,000～20,000.
6, chemical mechanical polishing slurry according to claim 5, the molecular weight that it is characterized in that described polyacrylic is 2,000～5,000; The molecular weight of described polyacrylic acid analog copolymer is 2,000～5,000.
7, according to each described chemical mechanical polishing slurry of claim 1～4, it is characterized in that this abrasive grains is silicon oxide, aluminum oxide, cerium oxide and/or polymer beads, the concentration of this abrasive grains is 1～2%.
8,, it is characterized in that this abrasive grains is of a size of 20～200nm according to each described chemical mechanical polishing slurry of claim 1～4.
9, chemical mechanical polishing slurry according to claim 7 is characterized in that this abrasive grains is of a size of 50～100nm.
10,, it is characterized in that described oxygenant is hydrogen peroxide, Urea Peroxide, Peracetic Acid, benzoyl peroxide, Potassium Persulphate, ammonium persulphate and/or ammonium nitrate according to each described chemical mechanical polishing slurry of claim 1～4.
11, according to each described chemical mechanical polishing slurry of claim 1～4, the pH value that it is characterized in that this chemical mechanical polishing slurry is 2.0～5.0.
12,, it is characterized in that this chemical mechanical polishing slurry also comprises tensio-active agent, complexing agent and/or inhibitor according to each described chemical mechanical polishing slurry of claim 1～4.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100308704A CN1955239A (en) | 2005-10-28 | 2005-10-28 | Chemical mechanical polishing material of copper |
| PCT/CN2006/002618 WO2007048314A1 (en) | 2005-10-28 | 2006-10-08 | A chemical mechanical polishing paste for copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100308704A CN1955239A (en) | 2005-10-28 | 2005-10-28 | Chemical mechanical polishing material of copper |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210545114 Division CN103074632A (en) | 2005-10-28 | 2005-10-28 | Application of chemical mechanical polishing slurry |
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| Publication Number | Publication Date |
|---|---|
| CN1955239A true CN1955239A (en) | 2007-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100308704A Pending CN1955239A (en) | 2005-10-28 | 2005-10-28 | Chemical mechanical polishing material of copper |
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| Country | Link |
|---|---|
| CN (1) | CN1955239A (en) |
| WO (1) | WO2007048314A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101451044A (en) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing liquid |
| CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN102796458A (en) * | 2012-07-17 | 2012-11-28 | 清华大学 | Chemical mechanical polishing aqueous composite and chemical mechanical polishing process of titanium substrate |
| WO2013020351A1 (en) * | 2011-08-05 | 2013-02-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN101418189B (en) * | 2007-10-26 | 2013-10-02 | 安集微电子（上海）有限公司 | Polishing fluid of metal copper |
| CN103865402A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN106147616A (en) * | 2015-04-28 | 2016-11-23 | 天津西美半导体材料有限公司 | The preparation method of solvent-borne type modified aluminum oxide polishing fluid |
| CN107636110A (en) * | 2015-05-15 | 2018-01-26 | 三星Sdi株式会社 | For organic film slurry composition for CMP and use its Ginding process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102352187B (en) * | 2007-07-05 | 2015-03-18 | 日立化成株式会社 | Polishing slurry for metal films and polishing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030087227A (en) * | 2002-05-08 | 2003-11-14 | 삼성전자주식회사 | Slurry for CMP of metal layer |
| WO2004101695A1 (en) * | 2003-05-15 | 2004-11-25 | Showa Denko K.K. | Polishing composition and polishing method |
| WO2005000984A1 (en) * | 2003-06-27 | 2005-01-06 | Showa Denko K.K. | Polishing composition and method for polishing substrate using the composition |
| US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2005
- 2005-10-28 CN CNA2005100308704A patent/CN1955239A/en active Pending
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| CN101418189B (en) * | 2007-10-26 | 2013-10-02 | 安集微电子（上海）有限公司 | Polishing fluid of metal copper |
| CN101451044A (en) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing liquid |
| CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| WO2013020351A1 (en) * | 2011-08-05 | 2013-02-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN102796458A (en) * | 2012-07-17 | 2012-11-28 | 清华大学 | Chemical mechanical polishing aqueous composite and chemical mechanical polishing process of titanium substrate |
| CN103865402A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN106147616A (en) * | 2015-04-28 | 2016-11-23 | 天津西美半导体材料有限公司 | The preparation method of solvent-borne type modified aluminum oxide polishing fluid |
| CN107636110A (en) * | 2015-05-15 | 2018-01-26 | 三星Sdi株式会社 | For organic film slurry composition for CMP and use its Ginding process |
| CN107636110B (en) * | 2015-05-15 | 2020-08-11 | 三星Sdi株式会社 | Use of chemical mechanical polishing slurry composition and method for polishing organic film |
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| WO2007048314A1 (en) | 2007-05-03 |
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