CN1786800A - Film crystal tube printing mfg. method - Google Patents
Film crystal tube printing mfg. method Download PDFInfo
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- CN1786800A CN1786800A CN 200410096916 CN200410096916A CN1786800A CN 1786800 A CN1786800 A CN 1786800A CN 200410096916 CN200410096916 CN 200410096916 CN 200410096916 A CN200410096916 A CN 200410096916A CN 1786800 A CN1786800 A CN 1786800A
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Abstract
The invention discloses a thin film transistor printing process method that includes the following steps: the method of defining printing image on crystal material, photoresist material, curing material and chemical electroless plating nm metal, deoxidizing the metal ion and depositing metal material to form metal conductor arrangement on basal board. The product made by the method could be used to manufacture panel display. It could sharply decrease the material and device cost.
Description
Technical Field
The invention relates to a Thin Film Transistor (TFT) printing process, in particular to a methodfor manufacturing a low-impedance metal conductive film of a gate electrode, a drain electrode and a source electrode in a TFT by matching a nano metal material with the printing process.
Background
In the conventional technology, a vacuum-coating (vacuum-coating), a yellow-light developing and etching process of the IC industry is used to fabricate a pattern (pattern) in a thin film transistor Array (TFT Array) process in a Liquid Crystal Display (LCD) production line. However, as the area of the panel increases, the cost of the processing equipment is too high in the vacuum coating method. Since post-processing patterning (patterning) is very successful and widely used in the electro-optic industry, the most well-known technique is Lithography (lithograph), which uses exposure, development and etching of photoresist to fabricate micro-or nanolayer circuits, but many of the related studies of nanolithography are moving to less expensive printing processes because of the high cost and difficulty of the related consumables.
In view of the same cost, the increasing size of the panel in the display industry makes the lithography and engraving extremely challenging, so a printing process is developed, which can be roughly classified into relief printing (relief printing), intaglio printing (intaglio printing), etc., and usually, in order to achieve the purpose of fast continuity, the printing process is usually performed in a roll-to-roll continuous or sheet-like large-area manner, and the printing process is applied to electronic industries such as printed circuit boards, Multilayer Ceramic capacitors (Multilayer capacitors), Low-Temperature co-fired Ceramics (LTCC), battery ribbons, etc., but generally limited to the precision thereof.
Whitesids discovered in 1993 that monolayer contactprinting can overcome the defects caused by pattern corner collapse and coating extrusion in a template, and the printing accuracy is improved to the nanometer level. Among them, whitesids proposed a soft Lithography technology (soft Lithography), Michael Austin, a motor system of princeton university, and a Stephen Chou research group, first tried to make a polymer organic thin film transistor by Nano Imprint Lithography (NIL), and more, a step and flash imprint Lithography technology (step and flash imprint Lithography) proposed by Wilson.
While Whitesides refers to contact printing, Austin/Chou and Wilson refers to imprint techniques, which are suitable for thermally cured materials, combined with photo-curing. The greatest challenge of contact printing or imprint printing is to precisely control the stacking alignment mechanism in addition to the resolution of the single layer pattern, so as to improve the electrical characteristics of the device.
The conductive layer material in the thin film transistor device is currently formed by depositing MoW, Al, Mo, etc. on a substrate by sputtering (sputtering), coating a photoresist, exposing and developing to obtain a desired pattern, and etching to obtain a pattern. However, when the panel area is gradually increased, the equipment cost is too high.
For example, U.S. Pat. No. 6,329,226 discloses a method for manufacturing a thin film transistor, which can be referred to as the schematic diagram of the thin film transistor structure shown in fig. 1A, and the manufacturing steps thereof are shown in fig. 1B, and include: (1) forming a gate electrode 120 on a substrate 110; (2) oxidizing a portion of the gate electrode to form a gate oxide layer 130; (3) forming a source 140 and a drain 150 on the gate oxide layer 130; (4) an organic semiconductor layer 160 is formed on the gate oxide layer 130, the source electrode 140 and the drain electrode 150. In another embodiment, a gate electrode is formed on (1) a substrate; (2) anodizing a portion of the gate electrode to form a gate oxide layer; (3) fabricating an organic semiconductor layer on the gate oxide layer; (4) and manufacturing a source electrode and a drain electrode on the organic semiconductor layer. In the above, the source electrode 140 and the drain electrode 150 are fabricated by electroless plating a silver layer, printing a self-assembled monolayer (SAM) by contact printing to define a pattern, removing silver metal unprotected by the SAM by wet chemical etching, and removing the SAM.
In another conventional embodiment, US6,413,790 discloses a method for fabricating a thin film transistor (tft) for a display device, which is schematically shown in fig. 2, and the structure of the tft includes a gate electrode 11 formed on a substrate 10, a thin film dielectric layer 16 formed thereon, a semiconductor layer 15 formed thereon, a drain electrode 12 and a source electrode 13 formed thereon, and a pixel electrode 14 formed thereon.
Wherein the gate 11 can be made by screen printing and the material is conductive adhesive; and using screen printing and soft lithography to fabricate the source 13 and the drain 12. Printing methods include inkjet printing, intaglio printing, relief printing, soft lithography, and the like; the conductive layer of the pixel electrode 14 is made of conductive polymer, conductive paste, or metal colloid particles. Further, the specification mentions that research groups printed palladium (Pd) metal colloid particles in microcontact to form patterns and then formed metal wirings by electroless copper plating.
As described in the above-mentioned US6,329,226 patent, although the resistance of the metal wiring is relatively low, a chemical etching step is required to define the pattern. However, the resistance of the metal wiring in US6,413,790, which is made of conductive adhesive or conductive polymer, is too high to be suitable for the future large-area display.
In the above technique, if the printing process is used, the corresponding metal material can be thermosetting or photo-curing paste, conductive polymer or metal colloid particles, etc. The synthesis preparation, particle size, shape, dispersion characteristic and solid content of the metal powder have absolute influence on the impedance value after forming and curing. The highest conductivity upper limit of the selected metal material is a pure metal film, so that the mode of adopting metal slurry is difficult to meet the requirement; the metal colloidal particles are mainly metal, but have similar problems to those of the metal slurry in terms of particle dispersion, particle diameter, shape, dispersion characteristics, solid content, and the like.
The basic principle of chemical silver plating is that silver salt solution (AgNO3) is reduced by a reducing agent to precipitate a silver Film with very fine particle size on the surface of glass or amorphous Silicon (amorphous Silicon) material or a general plastic Substrate, and the process can refer to the Method (Coating Liquid and Method for forming silver Film on Substrate using same) disclosed in US5,716,433, wherein the Liquid coated on the Substrate at least comprises ammonia (ammonium aqueous solution) containing silver nitrate (silver nitrate), aqueous solution … containing reducing agent (reducer) and strong base, and a surface-acidified Substrate is prepared, and then a silver Film is formed on the Substrate by the prepared aqueous solution.
The silver plating process is commonly referred to as silver mirror reaction, and includes the steps of plating, scouring, scrubbing, pre-washing, sensitizing, activating, plating silver, drying, baking, cooling, surface cleaning, drying, inspecting, etc., as designed by Drayton at 1830, and further developed by Liebig, later. The reaction for obtaining silver metal by reducing silver complex ions is as follows:
the solution formulated as described above may be generally referred to as a Tollen's agent. The reducing agent is, for example, acetaldehyde (Aldehyde) and can precipitate silver:
in addition to the acetaldehyde mentioned above, there are a number of reducing agents that can be used in electroless plating of silver, and the common ones include 14 commercial reducing agents formalin; dextrose; rochell salts; rochelle salts + silver nitrate; glyoxal; hydrazine sulfate; an above mixed texture solution of Rochelle salts and crystallized sugar; sugar inverted bynitricacid; KBH4 or DMAB; aldonic acid and aldonic lactone; cobalt ion; sodium sulfate; a triethanol amine; CH2OH (CHOH) nCH2OH (n ═ 1-6).
In view of the fact that the prior art is not suitable for the fabrication of large-area thin film transistor displays, the present inventors propose a method for fabricating thin film transistor by combining the advantages of the printing process and the chemical silver plating of the nano-metal material.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the printing process method of the thin film transistor is suitable for manufacturing large-area panels, and can provide the requirements of high-speed printing and low cost by combining the advantages of the printing process and the chemical silver plating nano metal material.
Therefore, one embodiment of the printing process method for a thin film transistor provided by the present invention comprises: carrying out surface treatment on the substrate; printing a seed crystal material on a substrate to define a printing pattern; immersing the substrate in a solution containing metal ions; reducing the metal ions and depositing a reduced metal material; finally, metal wiring is formed.
The second embodiment of the manufacturing method comprises: preparing a substrate, and carrying out surface treatment on the substrate; a printing module and a photoresist material; printing a photoresist material on the substrate to form a photoresist layer; defining a pattern; immersing the substrate in a solution containing metal ions; reducing metal ions and depositing a metal material on the substrate; removing the photoresist material; and forming metal wiring.
The third embodiment of the manufacturing method comprises: preparing a substrate, a printing module and a curing material, and defining a pattern on the printing module by using the curing material; carrying out surface treatment on the substrate; printing a defined pattern of a cured material on a substrate; immersing the substrate in a solution containing metal ions; reducing the metal ions and depositing a metal material; removing the solidified material; forming metal wiring.
The invention has the characteristics and advantages that: the thin film transistor printing process includes the steps of defining printing pattern on seed crystal material, photoresist material and curing material, soaking the substrate in solution, electroless chemical plating to form nanometer metal, reducing metal ion to form metal material and depositing metal wiring on thesubstrate. The low-resistance gate (gate) metal film, drain (drain) electrode film and source (source) electrode film in a Thin Film Transistor (TFT) are prepared by combining a printing mode with a nano metal material, the method is mainly applied to large-area continuous printing process to manufacture a flat panel display, the gate, drain and source metal films with good electrical properties can be prepared at normal pressure and low temperature, the material and process equipment cost can be greatly reduced, and the method can be used for manufacturing a large-area flexible panel by continuous printing and coating.
The invention is directed to the development of the printing process and the applicable nano metal material, and the development of the printing process and the direct manufacture of the low-impedance metal conductive film of the gate electrode, the drain electrode and the source electrode in the thin film transistor, namely, the metal film which saves material in the printing process and is easy to obtain good electrical property by chemical plating is extracted, so as to provide a solution scheme with high-speed printing and low cost, and the invention is beneficial to the development of large area of future displays due to the combination of the printing process and high-conductivity materials such as chemical silver plating nano metal materials.
Drawings
FIG. 1A is a schematic diagram of a prior art TFT structure;
FIG. 1B is a flow chart of a method for fabricating a TFT according to the prior art;
FIG. 2 is a schematic diagram of a prior art TFT structure;
FIG. 3A is a schematic view of a process structure of a planar contact printing method according to a first embodiment of the present invention;
FIG. 3B is a second schematic view of a second exemplary process structure of the planar contact printing method according to the present invention;
FIG. 3C is a flowchart of a process of the planar contact printing method according to the first embodiment;
FIG. 4A is a schematic view of a roller printing process according to a second embodiment of the present invention;
FIG. 4B is a second schematic view of a roller printing process according to a second embodiment of the present invention;
FIG. 5A is a schematic view of a roller printing process according to a third embodiment of the present invention;
FIG. 5B is a second schematic view of a roller printing process according to a third embodiment of the present invention;
FIG. 5C is a third schematic view of a roller printing process according to a third embodiment of the present invention;
FIG. 5D is a flowchart illustrating a roller printing process according to a third embodiment;
FIG. 6 is a flowchart illustrating a roller printing method according to a fourth embodiment;
FIG. 7A is a schematic view of a fifth embodiment of a process structure;
FIG. 7B is a second schematic process structure diagram of the fifth embodiment of the present invention;
FIG. 7C is a third schematic view of a process structure according to a fifth embodiment of the present invention;
FIG. 7D is a process flow of the fifth embodiment;
FIG. 8 is a process flow of the sixth embodiment.
The reference numbers illustrate:
Substrate 10 gate 11
Drain 12 source l3
Pixel electrode 14 semiconductor layer 15
Thin film dielectric layer 16 planar printing module 30
Metal wiring 47 roller type printing module 50
Metal material 77 metal wiring 79
Detailed Description
The invention relates to a thin film transistor printing process method, which adopts nano solution materials and a printing process to manufacture a low-impedance metal conductive film of a gate electrode, a drain electrode and a source electrode in the thin film transistor, can save the steps of photoresist coating, contraposition exposure, development, etching and the like, shortens the process, is suitable for manufacturing large-area panels, and can provide a solution with high-speed printing and low cost by combining the advantages of the printing process and chemical silver plating nano metal materials.
The basic principle of the chemical silver plating (please refer to the known background art) provided by the invention is that a silver salt solution (AgNO3) is reduced by a reducing agent to precipitate a silver film with extremely fine grain size on the surface of glass, amorphous silicon material or common plastic substrate, and the electroless silver plating can be applied to any substrate.
And the reducing agent may be aldehyde; dextrose; rochell salts; rochellsalts + silver nitrate; glyoxal; hydrazine sulfate; a bounded mixturesolution of Rochelle salts and crystallized sugar; sugar invertedby nitric acid; KBH4 or DMAB; aldonic acid and aldonic lactone; cobalt ion; sodium sulfate; a triethanol amine; CH (CH)2OH(CHOH)nCH2OH(n＝1-6)。
Furthermore, the well-known electroless silver plating is a highly unstable reaction, and the plating solution becomes turbid as soon as the reaction starts, because the reaction occurs via mutual adsorption of the positively charged silver particles. In order to improve the stability of the silver plating reaction, some colloids must be added as stabilizers, such as ethylenediamine, gelatin, gum arabic, organic acids, inorganic salts of zinc and lead, or copper sulfide. The pH adjustment in the conventional electroless silver plating process is performed by using NaOH, and Na ion-free (CH) is used since Na ion is a contamination source that must be eliminated in the semiconductor or thin film transistor process3)4NOH as an alternative. The pretreatment of the substrate in the electroless silver plating is critical to the success of the plating.
In electroless silver platingThe most commonly used substrate is glass, the surface of which is usually SnCl2To sensitize the surface, the principle is water-soluble Sn2+Adsorption on the surface of the glass increases the negative surface charge, by which Ag+Is reduced by Sn and adsorbed on the surface.
The main method adopted by the present invention is to use the nano solution material in combination with the printing process to print the seed crystal solution or the sensitized material (SnCl can be used) by using the roller or the plane contact printing method2Or Ag complex ion) to directly define the required pattern (pattern), then proceed chemical plating nano metal silver to obtain metal wiring, and then use ferrous sulfate solution (FeSO)4) Portions of the substrate where silver deposition is not desired are removed. Schematic process structure of the first embodiment of the planar contact printing methodAs shown in fig. 3A and 3B.
Fig. 3A shows a relief printing method, which defines a printing pattern on a planar printing module 30 by using a seed material 35, and directly performs electroless plating of nano-metallic silver on a substrate 32 by planar contact printing, such as a substrate 32 plated with a layer of metal wiring 37 in fig. 3B, wherein the substrate can be a conductor, a semiconductor, or an insulator material, and the printing pattern includes gate, drain, and source patterns of a thin film transistor. Referring to the main steps of the flat contact printing process shown in FIG. 3C:
step S301: preparing a substrate (glass or plastic), a patterned planar printing module, and a seed material (optionally containing SnCl) thereon2Or a sensitizing material of complex ions of Ag);
step S303: using ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) ratio of 1: 6, and removing metal ion contamination on substrate surface with hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) solution with the ratio of 1: 5 to remove the pollution of organic matters;
step S305: printing the seed crystal material on the substrate in a printing mode;
step S307: immersing the substrate in a solution containing a reducing agent, a stabilizer, metal ions, etc.;
step S309: reducing the metal by the reducing agent in the solution, and forming a metal film on the substrate by the stabilizer and the metal ions in the solution within a time;
step S311: removing the portion not required to be deposited by drying, cooling, surface cleaning, etc., one embodiment of which uses ferrous sulfate solution (FeSO)4) Removing unused portions of the metal deposit on the substrate 42;
step S313: forming metal wiring.
The metal film forming part of the above steps may be a silver mirror reaction, in which the liquid applied to the substrate at least includes ammonia water (ammoniacal aqueous solution) containing silver nitrate (silver nitrate), aqueous solution … containing reducing agent (reducer) and strong alkali, and the like, and a surface-treated substrate is prepared, and then a metal film is formed on the substrate by the prepared aqueous solution.
In the second embodiment of the present invention, a seed material is directly printed on a substrate by a roller printing module 40, as shown in fig. 4A, a previously defined pattern of the seed material 45 is printed on the substrate 42 by a roller printing module, the substrate 42 is immersed in a solution containing a mixture of a reducing agent, a stabilizer, and metal ions, the metal is reduced by the reducing agent in the solution, a metal film is formed on the substrate 42 within a certain time, and then a portion not requiring metal deposition is removed by surface cleaning, so as to form a metal wiring 47.
A third embodiment of the printing process of the present invention is shown in fig. 5A to 5C, which is a schematic process structure of a roller printing method, first using a roller printing module 50, or a planar printing module, to transfer the photoresist material 55 onto the substrate 52 by a printing process to form a photoresist layer (fig. 5A), performing a non-contact exposure and development with a photomask (photomask), etching to form a photoresist 56 (fig. 5B) defining a pattern, then performing a chemical plating of a nano-metal material 57, depositing a metal material 57 in the non-photoresist region, and removing the photoresist to obtain a metal wiring 59 (fig. 5C).
FIG. 5D shows the third embodiment of the process steps:
step S501: preparing a substrate, a roller-type or planar printing module and a photoresist material;
step S503: performing surface treatment of the substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) solution prepared according to the ratio of 1: 5 is used for removing the pollution of organic matters;
step S505: printing a photoresist material on a substrate in a printing mode to form a photoresist layer;
step S507: carrying out non-contact exposure and development through a photomask, and forming photoresist after etching to define a pattern;
step S509: sensitizing by implanting seed crystal (such as SnCl) on the surface of substrate (such as glass substrate)2A solution or a silver complex ion solution;
step S511: carrying out chemical plating of nano metal material, namely immersing the substrate in a mixed solution containing metal ions, a reducing agent, a stabilizing agent and the like to reduce metal, and depositing the metal material on the substrate within a certain reaction time;
step S513: cleaning and removing the photoresist;
step S515: forming metal wiring.
FIG. 6 shows a fourth embodiment of the present invention, which is similar to the third embodiment, wherein the substrate after the photoresist pattern is defined is sensitized, the photoresist is removed, and the non-photoresist portion can attract metal ions to form metal wiring, thereby achieving the purpose of electroless plating. The manufacturing process comprises the following steps:
step S601: preparing a substrate, a roller-type or planar printing module and a photoresist material;
step S602: surface treatment of substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) solution prepared according to the ratio of 1: 5 is used for removing the pollution of organic matters;
step S603: printing the photoresist material on the substrate in a printing mode through a roller;
step S605: forming photoresist after exposure, development and etching through a photomask;
step S607: sensitizing the surface of the substrate, namely planting crystals on the surface of the glass, and sensitizing only the non-photoresist part at the time, wherein the metal ion deposition selectivity of the area is larger than that of other areas;
step S609: cleaning and removing the photoresist;
step S611: immersing in a mixed solution containing metal ions, a reducing agent, a stabilizer and the like;
step S613: reducing the metal, and depositing the metal on the substrate;
step S615: using ferrous sulphate solution (FeSO)4) And removing the part which is not expected to be deposited with the metal on the substrate to form the metal wiring.
Fig. 7A to 7C show a fifth embodiment of the present invention, in which a roller-type printing module 70, or a planar printing module, is used to directly define a desired pattern on a substrate 72 by thermal curing or photo-curing material 55 by imprint printing (fig. 7A), then a metal material 77 is formed on the substrate 72 by electroless plating of nano-metal (fig. 7B), and then the thermal curing or photo-curing material is removed to obtain a metal wiring 79 (fig. 7C). The process steps are shown in FIG. 7D:
starting a printing process;
step S701: preparing a substrate, a roller-type or planar printing module and a curing material;
step S703: surface treatment of substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6 to decontaminate metal ions and useHydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) solution prepared according to the ratio of 1: 5 is used for removing the pollution of organic matters;
step S705: printing the defined curing material with a pattern on a substrate in a printing mode;
step S707: immersing the substrate in a sensitizing solution, wherein the solution is used to seed the substrate (e.g., glass substrate) with SnCl2To sensitize the surface, the principle is water-soluble Sn2+Adsorbed on the surface of the substrate to provide grain growth sites, thereby Ag+Reduced by Sn and adsorbed on the surface;
step S709: immersing in a mixed solution containing metal ions, a reducing agent, a stabilizer and the like, reducing metal, and depositing a metal material on the substrate;
step S711: cleaning and removing the part of the solidified material;
step S713: the remaining metal material forms a metal wiring.
The sixth embodiment is another implementation manner of the fifth embodiment, and is to perform a sensitization step after the pattern is defined by the imprint-cured material, then remove the thermal-cured or photo-cured material, and finally perform the electroless plating of the nano-silver metal to obtain the metal wiring. The flow chart shown in fig. 8:
starting a printing process;
step S801: preparing a substrate, a roller-type or planar printing module and a curing material;
step S802: surface treatment of substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) solution prepared according to the ratio of 1: 5 is used for removing the pollution of organic matters;
step S803: printing the defined solidified material with pattern on the base plate in a printing mode;
step S805: sensitization of the substrate surface, one example being surface treatment with SnCl2To effect sensitization of the surface;
step S807: cleaning and removing the part of the solidified material;
step S809: immersing in a mixed solution containing metal ions, a reducing agent,a stabilizer and the like;
step S811: reducing the metal, and depositing the metal aiming at the sensitized part on the substrate;
step S813: using ferrous sulphate solution (FeSO)4) The portions of the substrate where silver deposition is not desired are removed to form metal wiring.
In summary, the present invention is a printing process method for thin film transistor, which combines a printing method with a nano metal material to prepare a low-resistance gate (gate) metal film, a drain (drain) electrode film and a source (source) electrode film in a Thin Film Transistor (TFT), and can be applied to a large-area continuous printing process to manufacture a flat panel display.
It should be understood that the above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the invention, so that equivalent structural changes made by using the contents of the present specification and drawings are included in the scope of the present invention.
Claims (10)
1. A thin film transistor printing process method, which uses printing method to prepare the electrode of Thin Film Transistor (TFT), the method includes the following steps:
defining a printing pattern, namely defining the printing pattern on a printing module by using a seed crystal material containing SnCl2 or silver complex ions;
preparing a substrate and the printing module with defined patterns;
performing surface treatment of the substrate;
printing the seed crystal material on the substrate;
immersing the substrate in a solution containing metal ions, wherein the solution contains a reducing agent, a stabilizing agent, metal ions and the like;
reducing the metal ions and depositing a reduced metal material;
the metal wiring is formed by using ferrous sulfate solution (FeSO)4) And removing the part of the substrate where the metal deposition is not expected, namely forming the metal wiring at the position of the seed material.
2. The method of claim 1, wherein the step of treating the surface of the substrate comprises treating the surface of the substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) the solution prepared by the ratio of 1: 5 removes the pollution of organic matters.
3. The thin film transistor printing process of claim 1, wherein the printing module is a planar printing module or a roller printing module.
4. A thin film transistor printing process method, which uses printing method to prepare the electrode of Thin Film Transistor (TFT), the method includes the following steps:
preparing a substrate, a printing module and a photoresist material;
performing surface treatment of the substrate;
printing the photoresist material on the substrate to form a photoresist layer;
defining a pattern, carrying out non-contact exposure and development on the photoresist layer by using a photomask, and forming the defined pattern after etching;
immersingthe substrate in a solution containing metal ions, wherein the solution contains a reducing agent, a stabilizing agent, metal ions and the like;
reducing the metal ions and depositing a metal material on the substrate;
removing the photoresist material;
forming metal wiring.
5. The method of claim 4, wherein the step of treating the surface of the substrate comprises treating the surface of the substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) the solution prepared by the ratio of 1: 5 removes the pollution of organic matters.
6. The thin film transistor printing process of claim 4, wherein the printing module is a planar printing module or a roller printing module.
7. A thin film transistor printing process method, which uses printing method to prepare the electrode of Thin Film Transistor (TFT), the method includes the following steps:
preparing a substrate, a printing module and a curing material, and defining a pattern on the printing module by using the curing material;
performing surface treatment of the substrate;
printing a curing material with a defined pattern on the substrate, wherein the curing material is a photo-curing material or a thermosetting material;
immersing the substrate in a solution containing metal ions, wherein the solution contains a reducing agent, a stabilizing agent, metal ionsand the like;
reducing the metal ions and depositing a metal material on the substrate;
removing the solidified material;
forming metal wiring.
8. The method of claim 7, wherein the step of treating the surface of the substrate comprises treating the surface of the substrate with ammonia hydroxide, hydrogen dioxide and water (NH)3OH∶H2O2∶H2O) solution with a ratio of 1: 6, and hydrogen chloride, hydrogen dioxide and water (HCl: H)2O2∶H2O) the solution prepared by the ratio of 1: 5 removes the pollution of organic matters.
9. The thin film transistor printing process of claim 7, wherein the printing module is a planar printing module or a roller printing module.
10. The method of claim 7, wherein the solidified material is removed prior to the step of reducing the metal ions.
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| CNB2004100969168A CN100470340C (en) | 2004-12-06 | 2004-12-06 | Film crystal tube printing mfg. method |
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| CNB2004100969168A CN100470340C (en) | 2004-12-06 | 2004-12-06 | Film crystal tube printing mfg. method |
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| CN1786800A true CN1786800A (en) | 2006-06-14 |
| CN100470340C CN100470340C (en) | 2009-03-18 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103395307A (en) * | 2013-07-29 | 2013-11-20 | 电子科技大学 | Preparation method of internal electrode of chip-type electronic component |
| US8907920B2 (en) | 2012-08-13 | 2014-12-09 | J Touch Corporation | Complex sensing electrode structure applied to a touch panel |
| TWI480999B (en) * | 2012-07-16 | 2015-04-11 | J Touch Corp | Compound induction electrode structure applied to a touch panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| AU7137800A (en) * | 1999-07-21 | 2001-02-13 | E-Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
| US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
| JP4093926B2 (en) * | 2002-06-20 | 2008-06-04 | 株式会社リコー | Optical recording medium |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI480999B (en) * | 2012-07-16 | 2015-04-11 | J Touch Corp | Compound induction electrode structure applied to a touch panel |
| US8907920B2 (en) | 2012-08-13 | 2014-12-09 | J Touch Corporation | Complex sensing electrode structure applied to a touch panel |
| CN103395307A (en) * | 2013-07-29 | 2013-11-20 | 电子科技大学 | Preparation method of internal electrode of chip-type electronic component |
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