CN118109805A - Film forming device - Google Patents

Film forming device Download PDF

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Publication number
CN118109805A
CN118109805A CN202211524262.9A CN202211524262A CN118109805A CN 118109805 A CN118109805 A CN 118109805A CN 202211524262 A CN202211524262 A CN 202211524262A CN 118109805 A CN118109805 A CN 118109805A
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CN
China
Prior art keywords
gas
base
film forming
channel
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211524262.9A
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Chinese (zh)
Inventor
许灿
陶珩
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Filing date
Publication date
Application filed by Advanced Micro Fabrication Equipment Inc Shanghai filed Critical Advanced Micro Fabrication Equipment Inc Shanghai
Priority to CN202211524262.9A priority Critical patent/CN118109805A/en
Priority to TW112140776A priority patent/TW202425177A/en
Publication of CN118109805A publication Critical patent/CN118109805A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45597—Reactive back side gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a film forming device, which comprises a reaction cavity, a base, a support column and a process kit, wherein the base, the support column and the process kit are arranged in the reaction cavity; the reaction cavity is used for providing a closed place for wafer processing; the support column is arranged below the base and is used for supporting the base; the process kit is arranged around the base and is used for being matched with the side cavity wall of the base or the reaction cavity to form a channel of purge gas; the upper surface of the base is provided with a boss, the wafer is borne by the boss, a channel penetrating through the upper surface and the lower surface of the base is formed in the edge area of the base, purge gas is introduced to the edge position of the wafer, the edge and the back of the wafer are purged, and reaction gas in the wafer processing process is prevented from depositing on the edge and the back of the wafer. The film forming device provided by the invention avoids the situation that the horizontal through hole is formed in the base, is simpler to prepare and easy to realize, greatly reduces the manufacturing cost and has good application prospect.

Description

Film forming device
Technical Field
The invention belongs to the field of semiconductor equipment, and particularly relates to a film forming device.
Background
In the semiconductor production process, a wafer is usually processed by using a reaction gas to generate a material layer for forming an integrated circuit, such as chemical vapor deposition, physical vapor deposition, epitaxial growth, etc., a susceptor disposed in a processing chamber for carrying the wafer generally has a heating function, and the wafer is heated by the susceptor while the reaction gas is introduced into the reaction chamber to process the wafer, so as to generate a film on the surface of the wafer and form the material layer.
In the wafer processing process, the reactive gas is easy to deposit on the edge and the back of the wafer, the film on the edge of the wafer is thicker, and along with the progress of the reaction, the film on the edge of the wafer is thicker and thicker, and then the cracking and falling phenomena and the particle problem can occur, so that the wafer is damaged and does not reach the standard, and the performance of a device is influenced. In order to protect the wafer edge from being contacted by the reactive gas, a purge gas is typically introduced at the edge of the wafer to prevent the reactive gas of the process chamber from diffusing to the vicinity of the wafer edge.
In the existing design, a horizontal through hole is formed in a base, purge gas enters the horizontal through hole from the bottom of the base, and the purge gas is introduced to the edge position of a wafer through the horizontal through hole; however, it is very difficult to form a horizontal through hole in a susceptor made of ceramic material such as aluminum nitride (AlN) or aluminum oxide (AlOx), and only a few companies currently have the capability of manufacturing the susceptor and the manufacturing cost is high. In addition, in addition to a conventional set of gas supply devices for supplying purge gas into the process chamber, the existing designs require additional gas supply devices for supplying purge gas to horizontal through holes formed in the susceptor.
Disclosure of Invention
The invention aims to provide a film forming device, which is characterized in that a channel penetrating through the upper surface and the lower surface of a base is formed in the edge area of the base, purge gas is introduced to the edge position of a wafer, the edge and the back of the wafer are purged, reaction gas of a processing chamber is prevented from depositing on the edge and the back of the wafer, and therefore, the horizontal through holes are prevented from being formed in the base. Another object of the present invention is to purge the wafer edge and the channel between the process kit and the side walls of the reaction chamber with the same path of purge gas introduced into the reaction chamber, thereby simplifying the gas supply system for the purge gas.
The invention provides a film forming device, which comprises a reaction cavity, wherein a base, a support column for supporting the lower surface of the base and a process kit surrounding the base are arranged in the reaction cavity, and the upper surface of the base is used for bearing a wafer;
The edge region of the base is provided with a first channel penetrating through the upper surface and the lower surface of the base, and a first path of gas flows through the first channel to sweep the edge of the wafer;
a second channel is formed between the process kit and the side cavity wall of the reaction cavity, and the second channel is purged by a second path of gas.
Optionally, the upper surface of the base includes a boss for carrying the wafer;
the diameter of the boss is smaller than that of the wafer;
the first path of gas is also used for sweeping the back surface of the wafer.
Optionally, the first path of gas and the second path of gas originate from the same path of purge gas introduced into the reaction chamber.
Optionally, changing a channel width of at least one of the first channel and the second channel is used for adjusting a flow rate of the first channel gas and the second channel gas.
Optionally, the process kit includes an annular sidewall and an extension at an upper end of the sidewall;
the annular side wall is positioned between the side surface of the base and the side cavity wall;
the extension is located above the base.
Optionally, the extension is located above the edge region, for restricting a flow path of the first path gas flowing out from the first channel.
Optionally, the lower end of the annular sidewall is lower than the lower surface of the base.
Optionally, the process kit is removably mounted in the reaction chamber;
the film forming apparatus is configured with a plurality of process kits, each of which is cooperable with a base.
Optionally, the thickness of the extension of a portion of the process kit is different for varying the size of the gap between the extension and the top surface of the edge region of the base.
Optionally, the annular sidewall of the partial process kit has a different thickness for varying the channel width of the second channel.
Optionally, the purge gas is introduced from a bottom chamber wall of the reaction chamber or from a bottom sidewall of the support column.
Optionally, the first path gas and the second path gas respectively originate from different paths of purge gas introduced into the reaction chamber.
Alternatively, the flow rates of purge gases introduced into the reaction chambers by different routes are independently controllable.
Optionally, a purge gas corresponding to the second path of gas is introduced from a bottom chamber wall of the reaction chamber.
Optionally, the first path of gas is introduced through at least one gas pipeline, and the purge gas in the gas pipeline is conveyed into the first channel after passing through the gas homogenizing component.
Optionally, the gas homogenizing component is a hollow annular component.
Optionally, the first channel includes at least one of an arcuate channel and a hole channel.
Optionally, the first channel is a vertically arranged through channel.
Optionally, a heater is disposed in the base.
Optionally, the base is made of one or more of ceramic, metal and graphite.
Compared with the prior art, the invention has the advantages that:
According to the film forming device provided by the invention, the first channel penetrating through the upper surface and the lower surface of the base is formed in the edge area of the base, so that the horizontal through hole is prevented from being formed in the base, and the manufacturing difficulty of the base is reduced. Purge gas is introduced at the edge of the wafer to purge the edge and backside of the wafer, preventing the reaction gases of the process chamber from diffusing to the edge and backside of the wafer for deposition.
In addition, in the film forming device provided by the invention, the first path of gas for blowing the edge and the back of the wafer and the second path of gas between the blowing process kit and the side cavity wall of the reaction cavity can adopt the same path of blowing gas introduced into the reaction cavity, so that the gas supply system for supplying the blowing gas to the reaction cavity is simplified, and the manufacturing cost is saved.
In the film forming device provided by the invention, the first path of gas for blowing the edge and the back of the wafer and the second path of gas between the blowing process kit and the side cavity wall of the reaction cavity can also adopt different paths of blowing gases introduced into the reaction cavity, and the flow rates of the blowing gases introduced into the reaction cavity in different paths are independently controllable, so that independent regulation and control of the flow rates of the first path of gas and the second path of gas are basically realized, and special process requirements are met.
Drawings
FIG. 1 is a side view showing the structure of a film forming apparatus according to a first embodiment of the present invention;
FIGS. 2 and 3 are partial schematic views of the film forming apparatus;
A top view of the base described in the first embodiment of fig. 4 and 5;
Fig. 6 is a side view showing a structure of a film forming apparatus according to a second embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal device that includes the element.
It is noted that the drawings are in a very simplified form and utilize non-precise ratios for convenience and clarity in aiding in the description of one embodiment of the invention.
The film forming device provided by the invention is used for processing a wafer, generating a film on the surface of the wafer and forming a material layer in the production and preparation process of a semiconductor. The film forming device mainly comprises a reaction cavity, a base, a support column and a process kit, wherein the base, the support column and the process kit are arranged in the reaction cavity; the reaction cavity is used for providing a closed place for wafer processing; the support column is arranged below the base and is used for supporting the base; the process kit is arranged around the base and is used for being matched with the side cavity wall of the base or the reaction cavity to form a channel of purge gas; the upper surface of base has the boss, through the boss bears the wafer, the passageway of running through base upper surface and lower surface is seted up to the marginal zone of base, introduces the edge position of wafer with the purge gas, sweeps the edge and the back of wafer, prevents the reaction gas deposit at the edge and the back of wafer in the wafer processing process to the horizontal through-hole has been avoided seting up in the base.
Example 1
Fig. 1 is a schematic structural view of a film forming apparatus according to a first embodiment of the present invention, and fig. 2 and 3 are partial schematic views of the film forming apparatus. Referring to fig. 1 to 3, the film forming apparatus 100 includes a reaction chamber 110, a susceptor 120, a support column 130, and a process kit 140.
In the present invention, the base 120 is made of one or more materials selected from ceramic, metal and graphite; and a heater (not shown) is disposed in the base 120, for heating the wafer during the wafer processing process, so as to promote the formation of a thin film on the wafer surface.
The reaction chamber 110 is a closed chamber, and during the wafer processing, the reaction gas enters the reaction chamber from the area above the reaction chamber 110 to process the wafer 150 in the reaction chamber, so as to generate a film on the surface of the wafer 150 and form a material layer; purge gas is introduced into the reaction chamber 110 from a region below the reaction chamber for purging the surface of the component, preventing the reaction gas from diffusing to the surface of the component for deposition, etc. The purge gas does not participate in the reaction process of the wafer, and is usually one of inert gas, hydrogen gas and nitrogen gas, or a mixed gas thereof.
The support column 130 is disposed inside the reaction chamber 110; the support column 130 is located below the base 120 and is used for supporting the base.
The base 120 is positioned atop the support column 130. Optionally, the upper surface of the base 120 is provided with a boss 120a, the boss 120a is located at a middle position of the base 120, and the upper surface of the boss 120a is higher than the upper surface of the edge region 120b of the base, and the edge region 120b of the base surrounds the boss 120a. The boss 120a is used for carrying a wafer 150, and the diameter of the boss 120a is smaller than that of the wafer 150, so that for a wafer on the boss, the edge and the back are both located in the area above the edge area 120 b; during processing of the wafer, the reaction gas enters from the upper region of the reaction chamber 110, diffuses downward to the upper surface of the wafer, forms a thin film on the upper surface of the wafer, and simultaneously diffuses to the edge 150a of the wafer and the back surface 150b of the wafer (refer to the lower surface portion of the wafer that does not contact the boss), so that both the edge 150a and the back surface 150b of the wafer are exposed to the reaction gas.
In order to prevent the reaction gas from diffusing to the edge and the back of the wafer, the edge region 120b is provided with a plurality of first channels 160; each first channel 160 extends through the upper and lower surfaces of the edge region 120 b. The purge gas enters the first channel 160 from the lower surface of the edge region 120b to form a first path of gas a, and the first path of gas a flowing out from the upper surface of the edge region 120b purges the portion of the wafer above the edge region 120b, thereby preventing the reaction gas from diffusing to the wafer edge 150a and the back surface 150b. The first channel 160 is formed in the edge region 120b, so that a horizontal through hole is prevented from being formed in the base, and the manufacturing difficulty of the base 120 is reduced.
In an embodiment of the present invention, the first channels 160 are arc-shaped channels, as shown in fig. 4, and the edge area 120b is provided with a plurality of arc-shaped first channels 160; in another embodiment of the present invention, the first channels 160 are hole-shaped channels, as shown in fig. 5, and the edge region 120b is provided with a plurality of hole-shaped first channels 160. In other embodiments, the first channel 160 may be configured as a through channel with other shapes as needed, and the present invention is not limited herein.
The first channel 160 is vertically disposed from the upper surface of the edge region 120b to the lower surface of the edge region 120b, and penetrates the edge region 120b. In other embodiments, the first channel 160 may be configured as an inclined or other configured through channel as desired, and the invention is not limited herein.
The process kit 140 is shown disposed around the susceptor 120 for cooperating with the susceptor 120 or the side chamber walls 110b of the reaction chamber to form a passageway for a purge gas. The illustrated process kit 140 further includes a sidewall 140a and an extension 140b.
The side wall 140a is annular and is located between the base 120 and the side wall 110b of the reaction chamber, as shown in fig. 3; the inner side of the side wall 140a is closely attached to the base 120, a gap is formed between the outer side of the side wall 140a and the side wall 110B of the reaction chamber, the gap is used as a second channel 170, the purge gas forms a second path of gas B through the second channel 170, and the second path of gas B purges the side wall 140a and the side wall 110B of the reaction chamber, so as to prevent the reaction gas from diffusing to the surfaces of the side wall 140a and the side wall 110B and the lower part of the base 120. In some embodiments, the lower end of the sidewall 140a is below the lower surface of the base 120, facilitating the introduction and diversion of purge gas into the first channel 160.
The upper end of the sidewall 140a is provided with an extension portion 140b, the extension portion 140b is in a circular ring shape, the outer edge of the extension portion 140b is connected with the upper end of the sidewall 140a, and the extension portion 140b is located above the base 120, specifically, the extension portion 140b is located above the edge region 120b, so as to limit the flow path of the first gas a flowing out from the first channel 160. Referring to fig. 2 and 3 in combination, a gap is formed between the lower surface of the extension 140b and the top surface of the edge region 120b, and communicates with a gap formed between the back surface 150b of the wafer and the top surface of the edge region 120b, forming a first gap 180, the first gap 180 communicating with the first channel 160. A second gap 190 is formed between the sidewall of the extension 140b and the edge of the wafer, and the second gap 190 is in communication with the first gap 180; the first path of gas a flowing from the first channel 160 will enter the first gap 180 to purge the back surface 150b of the wafer and will continue to flow to the second gap 190 to purge the edge 150a of the wafer.
The illustrated process kit 140 is removably mounted in the film forming apparatus 100. In one embodiment of the present invention, the film forming apparatus 100 has a plurality of process kits 140, each process kit 140 being usable with the base 120. The thickness of the extension 140b of the partial process kit is different, and by using the process kit with different extension thickness, the size of the first gap 180 can be changed, so as to change the flow rate of the first path of gas a, and control the purge force of the first path of gas a on the back 150b and the edge 150a of the wafer. The thickness of the annular sidewall 140a of a part of the process kit is different, and the size of the second channel 170 can be changed by adopting the process kit with different thickness of the annular sidewall, so as to change the flow rate of the second path of gas B, and control the purging force of the second path of gas B on the sidewall 140a and the sidewall 110B of the reaction chamber.
In the first embodiment of the present invention, the first path of gas a and the second path of gas B originate from the same path of purge gas C introduced into the reaction chamber. In one embodiment of the present invention, the purge gas C may be introduced from the bottom chamber wall 110a of the reaction chamber 110; in another embodiment of the present invention, the purge gas may be introduced from the bottom sidewall 130a of the support column 130. The purge gas C flows from the bottom of the reaction chamber 110 to the upper region of the reaction chamber, for preventing the reaction gas from diffusing to the bottom of the reaction chamber 110; the purge gas C purges the lower surfaces of the susceptor 120 and the process kit 140 upward, and part of the purge gas C enters the first channel 160 to form a first path of gas a for purges the back surface 150b and the edge 150a of the wafer; a portion of the purge gas C enters the second channel 170 to form a second path of gas B that purges the sidewall 140a and the sidewall 110B of the reaction chamber.
Example two
Fig. 6 is a side view showing a structure of a film forming apparatus according to a second embodiment of the present invention. In the second embodiment of the present invention, the gas supply system 200 includes a reaction chamber 210, a base 220, a support column 230, a process kit 240, and the like.
For the first embodiment, the first path of gas a and the second path of gas B originate from the same path of purge gas C introduced into the reaction chamber; therefore, the gas supply system 100 may be designed to supply the purge gas C into the reaction chamber 110 by only one gas supply system. Although the device structure can be simplified, the first path of gas a and the second path of gas B are derived from the same path of purge gas, and it is difficult to realize separate regulation and control of the flow rates of the first path of gas a and the second path of gas B, especially for a wafer processing process requiring that the flow rate of the first path of gas a is different from the flow rate of the second path of gas B, the film forming device provided in the first embodiment cannot meet the process requirement.
Unlike the first embodiment, in the second embodiment of the present invention, the first path gas a 'and the second path gas B' are derived from purge gases introduced into the reaction chamber through different paths, respectively. In the second embodiment of the present invention, as shown in fig. 6, the purge gas D 'for forming the first path of gas a' and the purge gas C 'for forming the second path of gas B' are relatively independent, and are respectively supplied into the reaction chamber 210 by two sets of gas supply systems, so that the flow rates of the first path of gas a 'and the second path of gas B' can be substantially independently controlled, and the special process requirements can be satisfied.
In one implementation of this embodiment, the purge gas C ' is introduced from the bottom wall of the reaction chamber, and enters the second channel through the reaction chamber 210 to form a second gas B ', and the second gas B ' purges the sidewall 240a of the process kit and the sidewall 210B of the reaction chamber, so as to prevent the reaction gas from diffusing to the surfaces of the sidewall 240a and the sidewall 210B and under the susceptor 220.
In the second embodiment of the present invention, the gas supply system 200 further includes a gas homogenizing member 260, the gas homogenizing member 260 is a hollow annular member, the gas homogenizing member 260 is disposed in the reaction chamber 210 and below the base 220, and the gas homogenizing member 260 has a plurality of gas outlets, and each gas outlet corresponds to the position of the first channel. Purge gas supplied by the gas supply system enters the gas homogenizing member 260 through a plurality of gas inlet pipelines (not shown in the figure), and is uniformly mixed in the gas homogenizing member 260, so that the flow rate and the like of the purge gas sprayed out from each gas outlet of the gas homogenizing member 260 are kept consistent. Purge gas ejected from each air outlet enters the first channel to form a first path of gas A'. The first path of gas A' flowing out of the first channel enters the first gap to purge the back surface of the wafer, and continuously flows to the second gap to purge the edge of the wafer.
Compared with the first embodiment, the first path of gas A 'and the second path of gas B' are derived from purge gases introduced into the reaction cavity in different paths, and the flow rates of the purge gases introduced into the reaction cavity in different paths are independently controllable, so that independent regulation and control of the flow rates of the first path of gas and the second path of gas are basically realized, and special process requirements are met.
According to the film forming device provided by the invention, the first channels penetrating through the upper surface and the lower surface of the base are formed in the edge area of the base, so that the situation that horizontal through holes are formed in the base, purge gas is introduced to the edge position of a wafer, the edge and the back of the wafer are purged, and the reaction gas of the processing chamber is prevented from being diffused to the vicinity of the edge and the back of the wafer to be deposited is avoided.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims (20)

1. A film forming apparatus comprises a reaction chamber, wherein a base, a support column for supporting the lower surface of the base and a process kit surrounding the base are arranged in the reaction chamber, the upper surface of the base is used for bearing a wafer,
The edge region of the base is provided with a first channel penetrating through the upper surface and the lower surface of the base, and a first path of gas flows through the first channel to sweep the edge of the wafer;
a second channel is formed between the process kit and the side cavity wall of the reaction cavity, and the second channel is purged by a second path of gas.
2. The film forming apparatus according to claim 1, wherein,
The upper surface of the base comprises a boss for bearing the wafer;
the diameter of the boss is smaller than that of the wafer;
the first path of gas is also used for sweeping the back surface of the wafer.
3. The film forming apparatus according to claim 1 or 2, wherein,
The first path of gas and the second path of gas are derived from the same path of purge gas introduced into the reaction cavity.
4. The film forming apparatus according to claim 3, wherein,
And changing the channel width of at least one of the first channel and the second channel, and adjusting the flow rate of the first channel gas and the second channel gas.
5. The film forming apparatus according to claim 4, wherein,
The process kit comprises an annular side wall and an extension part positioned at the upper end of the side wall;
the annular side wall is positioned between the side surface of the base and the side cavity wall;
the extension is located above the base.
6. The film forming apparatus according to claim 5, wherein,
The extension is located above the edge region for restricting a flow path of the first path gas flowing out of the first channel.
7. The film forming apparatus according to claim 6, wherein,
The lower end of the annular sidewall is lower than the lower surface of the base.
8. The film forming apparatus according to claim 7, wherein,
The process kit is detachably mounted in the reaction chamber;
the film forming apparatus is configured with a plurality of process kits, each of which is cooperable with a base.
9. The film forming apparatus according to claim 8, wherein,
The thickness of the extension of a portion of the process kit is different for varying the size of the gap between the extension and the top surface of the edge region of the base.
10. The film forming apparatus according to claim 9, wherein,
The annular side walls of the partial process kit have different thicknesses for varying the channel width of the second channel.
11. The film forming apparatus according to claim 3, wherein,
The purge gas is introduced from the bottom chamber wall of the reaction chamber or from the bottom side wall of the support column.
12. The film forming apparatus according to claim 1 or 2, wherein,
The first path of gas and the second path of gas are respectively sourced from purge gases which are introduced into the reaction cavity in different paths.
13. The film forming apparatus according to claim 12, wherein,
The flow rates of purge gases introduced into the reaction chambers by different paths are independently controllable.
14. The film forming apparatus according to claim 13, wherein,
Purge gas corresponding to the second path of gas is introduced from the bottom chamber wall of the reaction chamber.
15. The film forming apparatus according to claim 13, wherein,
The first path of gas is introduced through at least one gas pipeline, and purge gas in the gas pipeline is conveyed into the first channel after passing through the gas homogenizing component.
16. The film forming apparatus according to claim 15, wherein,
The gas homogenizing component is a hollow annular component.
17. The film forming apparatus according to claim 1, wherein,
The first channel includes at least one of an arcuate channel and a hole-like channel.
18. The film forming apparatus according to claim 1, wherein,
The first channel is a vertically arranged through channel.
19. The film forming apparatus according to claim 1, wherein,
A heater is disposed in the base.
20. The film forming apparatus according to claim 1, wherein,
The base is made of one or more of ceramic, metal and graphite.
CN202211524262.9A 2022-11-30 2022-11-30 Film forming device Pending CN118109805A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202211524262.9A CN118109805A (en) 2022-11-30 2022-11-30 Film forming device
TW112140776A TW202425177A (en) 2022-11-30 2023-10-25 Film forming device capable of avoiding the need to define a horizontal through hole in the base so that the preparation is simpler and easier to implement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211524262.9A CN118109805A (en) 2022-11-30 2022-11-30 Film forming device

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CN118109805A true CN118109805A (en) 2024-05-31

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Family Applications (1)

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