CN117268254A - Magnetic angle sensor - Google Patents

Abstract

The invention discloses a magnetic angle sensor, which comprises: at least one magneto-resistive sensor, each magneto-resistive sensor configured to generate a first sense signal reflecting an angle of the magnetic field, the first sense signal having a period of 180 degrees; a pair of hall sensors, each configured to generate a second sensing signal reflecting an angle of the magnetic field, the second sensing signal having a period of 360 degrees. And obtaining a high-precision angle value of the magnetic field within a range of 180 degrees according to the first sensing signals, and obtaining the high-precision angle value of the magnetic field within a range of 360 degrees according to the two second sensing signals and the high-precision angle value of the magnetic field within the range of 180 degrees. In this way, it is possible to extend the measurement range of the magneto-resistive sensor from 180 degrees to 360 degrees and to maintain high-precision angle detection of the magneto-resistive sensor.

Description

Magnetic angle sensor

[ field of technology ]

The invention relates to the field of magnetic sensors, in particular to a magnetic angle sensor.

[ background Art ]

Anisotropic magnetoresistance (Anisotropic Magnetoresistance, AMR) technology has significant advantages in magnetic angle measurement. First, the AMR angle sensor has only one magnetic thin film and works in the saturation magnetization region with higher accuracy than the Hall (Hall) angle sensor and other magnetoresistance effect angle sensors, such as Giant Magnetoresistance (GMR) angle sensor and Tunneling Magnetoresistance (TMR) angle sensor. Again, the AMR magnetic angle sensor is simple to manufacture compared to GMR and TMR magnetic angle sensors. However, the measuring period of the AMR-based angle sensor is only 180 degrees, which cannot meet the magnetic angle measuring requirement of 360 degrees. Although Hall, GMR and TMR magnetic angle sensors can meet the magnetic angle measurement requirement of 360 degrees, their angle accuracy is lower than AMR magnetic angle sensors.

Therefore, a new technical solution is needed to solve the problems existing in the prior art.

[ invention ]

The invention aims to provide a magnetic angle sensor, which can expand the measurement range of a magnetic resistance sensor from 180 degrees to 360 degrees and maintain high-precision angle detection of the magnetic resistance sensor.

To achieve the above object, the present invention provides a magnetic angle sensor comprising: at least one magneto-resistive sensor, each magneto-resistive sensor configured to generate a first sense signal reflecting an angle of the magnetic field, the first sense signal having a period of 180 degrees; and a pair of Hall sensors, each of which is configured to generate a second sensing signal reflecting the angle of the magnetic field, wherein the period of the second sensing signal is 360 degrees, wherein the high-precision angle value of the magnetic field in the range of 180 degrees is obtained according to the first sensing signal, and the high-precision angle value of the magnetic field in the range of 360 degrees is obtained according to the two second sensing signals and the high-precision angle value of the magnetic field in the range of 180 degrees.

In a further embodiment, the number of the magnetic resistance sensors is two, each of the magnetic resistance sensors is an AMR sensor, each of the AMR sensors is a wheatstone full bridge structure, each of the AMR sensors senses a magnetic field component parallel to a surface thereof, the two AMR sensors are respectively called a first AMR sensor and a second AMR sensor, wherein the second AMR sensor rotates a first predetermined angle on a plane relative to the first AMR sensor, and a high-precision angle value of the magnetic field within a range of 180 degrees is obtained by performing inverse trigonometric function operation based on two first sensing signals output from the two AMR sensors.

In a further embodiment, each AMR sensor includes a power source terminal, a first output terminal, a ground terminal, a second output terminal, a first AMR resistor connected between the power source terminal and the first output terminal, a second AMR resistor connected between the first output terminal and the ground terminal, a third AMR resistor connected between the ground terminal and the second output terminal, a fourth AMR resistor connected between the second output terminal and the power source terminal, the first output terminal and the second output terminal outputting a first sensing signal, and an angle between an equivalent direction of a current flowing in each AMR resistor of the first AMR sensor and an equivalent direction of a current flowing in a corresponding AMR resistor of the second AMR sensor is the first predetermined angle.

In a further embodiment, the pair of hall sensors are referred to as a first hall sensor and a second hall sensor, respectively, a line L1 of the center of the first hall sensor with the center of the magneto-resistive sensor is perpendicular to a line L2 of the center of the second hall sensor with the center of the magneto-resistive sensor, and a distance from the center of the first hall sensor to the center of the magneto-resistive sensor is equal to a distance from the center of the second hall sensor to the center of the magneto-resistive sensor.

In a further embodiment, it is determined whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees based on the two second sensor signals, and then a high-precision angle value of the magnetic field in the range of 360 degrees is obtained in combination with a high-precision angle value of the magnetic field in the range of 180 degrees.

In a further embodiment, the magnetic angle sensor is operated in conjunction with a magnet mounted on one side of the magnetic angle sensor, the magnet being rotated along a center during operation, the center of rotation of the magnet coinciding with a projection of the center of the magnetoresistive sensor.

In a further embodiment, both hall sensors and magneto-resistive sensors are integrated in a signal processing wafer to form a single magnetic angle sensor chip; or two Hall sensors are integrated in one signal processing wafer, a magnetic resistance sensor wafer is manufactured independently, and then the signal processing wafer integrated with the Hall sensors and the magnetic resistance sensor wafer are wire-bonded and packaged into one magnetic angle sensor chip.

Compared with the prior art, the second sensing signal obtained through the Hall sensor in the invention determines whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees, and then the high-precision angle value of the magnetic field in the range of 360 degrees is obtained by combining the high-precision angle value of the magnetic field in the range of 180 degrees. In this way, the high-precision measurement range of the magnetoresistive sensor is extended from 180 degrees to 360 degrees.

It is therefore to be understood that this summary is provided only for purposes of summarizing some embodiments in order to provide a basic understanding of some aspects of the invention. Accordingly, the above-described embodiments are merely examples and should not be construed as narrowing the scope or spirit of the present invention in any way. Features, aspects, and advantages of the various embodiments will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of some embodiments.

[ description of the drawings ]

The invention will be more readily understood by reference to the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:

FIG. 1 is a schematic diagram of an equivalent circuit of two AMR sensors of the present invention in one embodiment;

FIG. 2 is a schematic diagram of the magnetic angle sensor of the present invention in one embodiment;

FIG. 3a is a schematic diagram of a Hall sensor of the present invention in one embodiment;

FIG. 3b is a schematic diagram of a Hall sensor according to another embodiment of the present invention; FIG. 4 is a schematic top view of the magnetic angle sensor and the magnet of the present invention in operation;

FIG. 5 is a schematic side view of the magnetic angle sensor and the magnet of the present invention in operation;

FIG. 6 is a schematic diagram of two first sensing signals output by the two AMR sensors of FIG. 1;

FIG. 7 is a schematic diagram of two second sensing signals output by the two Hall sensors in FIG. 3;

FIG. 8 is a schematic diagram of angle values obtained by performing inverse trigonometric function operation on the two first sensing signals in FIG. 6;

FIG. 9 is a schematic diagram of angle values obtained by performing inverse trigonometric function operation on the two second sensing signals in FIG. 7;

fig. 10 is a schematic diagram of two high-low level signals obtained by respectively passing the two second sensing signals in fig. 7 through a comparator.

[ EXAMPLES ]

Some embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments are shown. Indeed, various embodiments of the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. For example, unless otherwise indicated, nothing herein as first, second, etc. should be construed as implying a particular order. Furthermore, something may be described as being higher than something (unless otherwise stated) and actually lower than something, and vice versa; also something described as being on the left side may be on the right side and vice versa. Like reference numerals refer to like elements throughout.

Fig. 2 is a schematic diagram of a magnetic angle sensor 200 according to an embodiment of the present invention. As shown in fig. 2, the magnetic angle sensor 200 may be a packaged chip. The magnetic angle sensor 200 includes at least one magnetoresistive sensor and a pair of HALL (HALL) sensors 202 and 203. 201 is the area where the magneto-resistive sensor is located.

Each magnetoresistive sensor is configured to generate a first sense signal responsive to an angle of the magnetic field, the first sense signal having a period of 180 degrees. Each of the hall sensors 202 and 203 is configured to generate a second sensing signal reflecting the angle of the magnetic field, the second sensing signal having a period of 360 degrees. The high-precision angle value of the magnetic field in the range of 180 degrees is obtained according to the first sensing signals, and the high-precision angle value of the magnetic field in the range of 360 degrees is obtained according to the two second sensing signals and the high-precision angle value of the magnetic field in the range of 180 degrees.

In one embodiment, the number of magnetoresistive sensors is two, and each magnetoresistive sensor is an AMR sensor. Each AMR sensor is a wheatstone full bridge configuration, each AMR sensor sensing a magnetic field component parallel to its surface. FIG. 1 is a schematic diagram of an equivalent circuit of two AMR sensors in one embodiment of the present invention. The two AMR sensors are referred to as a first AMR sensor 100a and a second AMR sensor 100b, respectively, wherein the second AMR sensor 100b is rotated by a first predetermined angle with respect to the first AMR sensor 100a on a plane. As shown in fig. 1, the first predetermined angle is 45 degrees. In other embodiments, the first predetermined angle may also be one of 135 degrees, 225 degrees, and 315 degrees.

As shown in fig. 1, each AMR sensor includes power terminals VDD1 and VDD2, first output terminals v1+ and v2+, ground terminals GND1 and GND2, second output terminals V1-and V2-, first AMR resistors R11 and R21 connected between the power terminals and the first output terminals, second AMR resistors R12 and R22 connected between the first output terminals and the ground terminals, third AMR resistors R13 and R23 connected between the ground terminals and the second output terminals, fourth AMR resistors R14 and R24 connected between the second output terminals and the power terminals. And the included angle between the equivalent direction of the current flowing in each AMR resistor of the first AMR sensor and the equivalent direction of the current flowing in the corresponding AMR resistor of the second AMR sensor is the first preset angle.

As shown in fig. 1, four AMR resistors of each of the AMR sensors 100a and 100b are arranged at equal intervals around a center. As shown in fig. 1, the second AMR sensor 100b is placed at a side where the first AMR sensor 100a is placed. In a preferred embodiment, the eight AMR resistors of the two AMR sensors 100a and 100b are equally spaced about the same center, which may be referred to as the center of the magnetoresistive sensor, when the four AMR resistors of the first AMR sensor and the four AMR resistors of the second AMR sensor are alternately spaced from each other during the physical layout of the circuit.

As shown in fig. 2, a pair of hall sensors 202 and 203 are referred to as a first hall sensor 202, a second hall sensor 203, respectively. Each hall sensor is a horizontal hall sensor capable of sensing a magnetic field component perpendicular to its surface. A line 2002 of the center B of the first hall sensor 202 and the center a of the magneto-resistive sensor 201 is perpendicular to a line 2001 of the center C of the second hall sensor 203 and the center a of the magneto-resistive sensor 201, and a distance from the center B of the first hall sensor 202 to the center a of the magneto-resistive sensor 201 is equal to a distance from the center of the second hall sensor 203 to the center a of the magneto-resistive sensor 201. With the right x-axis and the upward y-axis shown in fig. 2, B is on the x-axis and C is on the y-axis. In practice, B and C need not be located on the x and y axes, and may be located at other positions as long as the angle between AB and AC is 90 degrees. The center a of the magnetoresistive sensor 201 may not be the center of the package, but should be the structural center of the two AMR sensors.

Fig. 3a is a schematic diagram of a hall sensor 300a according to an embodiment of the present invention. The hall sensor 300a may be used as the first hall sensor 202 and the second hall sensor 203 in fig. 2. The hall sensor 300a has a cross shape. Specifically, the cross shape is an N-well implanted on a P-type semiconductor substrate. Each Hall sensor is a horizontal Hall sensor prepared by adopting a CMOS (complementary metal oxide semiconductor) process. Each hall sensor includes power terminals VDD1 and VDD2, first output terminals v1+ and v2+, ground terminals GND1 and GND2, and second output terminals V1-and V2-. The power end, the first output end, the grounding end and the second output end are respectively positioned at the four tail ends of the cross shape. Fig. 3b is a schematic diagram of a hall sensor 300b according to another embodiment of the present invention. The hall sensor 300b may also be used as the first hall sensor 202 and the second hall sensor 203 in fig. 2. The hall sensor 300b in fig. 3b is rotated 45 degrees with respect to fig. 3a for the hall sensor 300b in the present invention.

FIG. 4 is a schematic top view of the magnetic angle sensor 402b and the magnet 402a of the present invention in operation; fig. 5 is a schematic side view of the magnetic angle sensor 402b and the magnet 402a of the present invention in operation. The magnetic angle sensor 402b may be the magnetic angle sensor 200 shown in fig. 2. As shown in fig. 4 and 5, the magnetic angle sensor 402b works in cooperation with the magnet 402 a. The magnet 402a is mounted on one side of the magnetic angle sensor 402 b. In operation, the magnet 402a rotates about a center while holding the magnetic angle sensor 402b stationary. The center of rotation of the magnet 402a coincides with the projection of the center a of the magnetoresistive sensor. The center a of the magnetoresistive sensor is the center of the AMR sensor. B and C are the centers of the two Hall sensors. In operation, if the rotation center of the magnet 402a does not overlap with the projection of the center a of the magnetic angle sensor 402b, the accuracy of the angle obtained by the magnetic angle sensor is deteriorated. And 403 is a magnetic induction line, at the center A, the magnetic field is along the x direction, and at the point B, the magnetic field has a component in the z direction, so that the horizontal Hall sensor generates voltage output, namely a second sensing signal is output.

In one embodiment, both hall sensors and magnetoresistive sensors are integrated in a signal processing wafer to form a single magnetic angle sensor chip. The signal processing wafer is fabricated based on a CMOS process, and the hall sensor and the magnetoresistive sensor are also fabricated based on a CMOS process. In another alternative embodiment, two hall sensors are integrated in one signal processing die, the magnetoresistive sensor die is fabricated separately, and then the hall sensor integrated signal processing die is wire-bonded to the magnetoresistive sensor die to form a single magnetic angle sensor chip. At this time, the hall sensor and the signal processing wafer are manufactured based on a CMOS process.

When the AMR sensor works, a rotating magnetic field is applied by the magnet, and the magnetic field value can enable the magnetization state of the reluctance bars of the AMR resistors of each AMR sensor to be in a saturated state. Along with the rotation of the magnetic field, the first sensing signal output by the first AMR sensor (the voltage difference between the first output end and the second output end) is S11, specifically, the first sensing signal S11 is d×cos2θ or d×sin2θ, where D is the output amplitude, and θ is the angle of rotation of the magnetic field; the first sensing signal of the output (voltage difference between the first output end and the second output end) of the second AMR sensor is S12, specifically, the first sensing signal S12 is e×sin2θ or e×cos2θ, where E is an output amplitude. Fig. 6 is a schematic diagram of two first sensing signals output by the two AMR sensors in fig. 1, the first sensing signal S11 may be one of cos2θ and sin2θ, and the first sensing signal S12 may be the other of cos2θ and sin2θ. Preferably, D and E are equal.

And performing inverse trigonometric function operation on the basis of the two first sensing signals S11 and S12 output by the two AMR sensors to obtain a high-precision angle value of the magnetic field within a 180-degree range. Specifically, the angle value of the magnetic field with high precision in the 180 degree range is 1/2×arctan (sin 2θ/cos2θ), that is, arctan (S11/S12) if S11 is sin2θ, and 1/2×arctan (S12/S11) if S12 is sin2θ. Fig. 8 is a schematic diagram of angle values obtained by performing inverse trigonometric function operation on the two first sensing signals in fig. 6.

The second sensing signal output by the first hall sensor is S21, and the second sensing signal output by the second hall sensor is S22. Specifically, as shown in fig. 7, as the magnetic field rotates, one of the two second sensing signals S21 and S22 is f×cos θ, and the other is g×sin θ, where F and G are output amplitudes. Preferably, F and G are equal.

In one embodiment, the inverse trigonometric function operation is performed based on the two second sensing signals S21 and S22 output by the two hall sensors to obtain a low-precision angle value of the magnetic field within the 360-degree range. Specifically, the angle value of the magnetic field with low precision in the 360 degree range is arctan (sin θ/cos θ), that is, arctan (S21/S22) if S21 is sin θ, arctan (S22/S21) if S22 is sin θ. Fig. 9 is a schematic diagram of angle values obtained by performing inverse trigonometric function operation on the two second sensing signals in fig. 7. In this way, whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees is determined according to the low-precision angle value of the magnetic field in the range of 360 degrees, and then the high-precision angle value of the magnetic field in the range of 360 degrees can be obtained by combining the high-precision angle value of the magnetic field in the range of 180 degrees.

In another embodiment, another scheme of determining the angle interval of the magnetic field based on the second sensing signal may be adopted, that is, determining whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees. In this embodiment, the magnetic angle sensor further comprises two comparators. Each comparator compares a second sensing signal with a predetermined threshold to obtain a high-low level signal. The predetermined threshold is adjustable. And determining whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees according to the two high-low level signals. Fig. 10 is a schematic diagram of two high-low level signals obtained by respectively passing the two second sensing signals in fig. 7 through a comparator. As shown in fig. 10, if both high and low level signals are high when the high precision angle value of the magnetic field is 0 degrees in the 180 degree range, the angle value of the magnetic field is in the range of 0 to 180 degrees at this time, and if one of the two high and low level signals is high and the other is low when the high precision angle value of the magnetic field is 0 degrees in the 180 degree range, the angle value of the magnetic field is in the range of 180 to 360 degrees at this time.

The measuring range of the AMR magnetic angle sensor is expanded from 180 degrees to 360 degrees, AMR high-precision angle detection is kept, a mode of combining a horizontal Hall with AMR is adopted, and the horizontal Hall can be manufactured by adopting a standard CMOS process without other special processes.

The invention has one or more of the following advantages: expanding the measuring range of the AMR sensor from 180 degrees to 360 degrees; the bonding package can be realized by stacking two wafers and then bonding the two wafers, and can also be realized by integrating the two wafers into one wafer; the AMR magneto-resistance technology is combined with the horizontal Hall technology, and a sensor with 360-degree magnetic angle high-precision measurement is manufactured by adopting a planar technology. The magnetic angle sensor can be applied to the fields of electronic consumer, industry, automobiles and the like.

The details of the invention will be more clearly understood in conjunction with the accompanying drawings and description of specific embodiments of the invention. However, the specific embodiments of the invention described herein are for the purpose of illustration only and are not to be construed as limiting the invention in any way. Given the teachings of the present invention, one of ordinary skill in the related art will contemplate any possible modification based on the present invention, and such should be considered to be within the scope of the present invention. It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "mounted," "connected," "coupled," and "connected" are to be construed broadly, and may be, for example, mechanically or electrically connected, may be in communication with each other in two elements, may be directly connected, or may be indirectly connected through an intermediary, and the specific meaning of the terms may be understood by those of ordinary skill in the art in view of the specific circumstances. The terms "vertical," "horizontal," and the like are used herein for illustrative purposes only. The terms "upper", "lower", "left" and "right" are used herein with reference to the orientation of the drawings, as opposed to the actual concepts. The "high precision" and "low precision" in the present invention are relative, and the high precision is relatively low precision, and the low precision is relatively high precision, and they may also be referred to as a first precision (corresponding to high precision), a second precision (corresponding to low precision), and the first precision is higher than the second precision.

The above description is intended to be illustrative, and not restrictive. Although the invention has been described with reference to specific illustrative examples, it is to be understood that the invention is not limited to the described embodiments. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Reference herein to "one example" or "an example" means that a particular feature, structure, or characteristic described in connection with the example is included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. The terms "plurality" and "a plurality" as used herein mean two or more. "and/or" in the present invention means "and" or ". Furthermore, the terms "first," "second," "third," "fourth," and the like as used herein are intended as labels to distinguish between different elements and may not necessarily have a sequential meaning depending on their numerical designation. Thus, the terminology used herein is for the purpose of describing particular implementations only and is not intended to be limiting.

Many modifications and other implementations of the invention will come to mind to one skilled in the art to which this invention pertains having knowledge of the relevant industry and some of the raw data. Therefore, it is to be understood that the invention is not to be limited to the specific embodiments disclosed and that modifications are intended to be included within the scope of the appended claims. Furthermore, although the foregoing description and the associated drawings describe the implementation of particular combinations of elements, functions in particular embodiments, elements, functions in different combinations are also included by substitution within the scope of the appended claims. The following claims also contain elements, functions in combination with those explicitly described above. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims (13)

1. A magnetic angle sensor, comprising:

at least one magneto-resistive sensor, each magneto-resistive sensor configured to generate a first sense signal reflecting an angle of the magnetic field, the first sense signal having a period of 180 degrees;

a pair of Hall sensors, each of which is configured to generate a second sensing signal of an angle of the reaction magnetic field, the second sensing signal having a period of 360 degrees,

the high-precision angle value of the magnetic field in the range of 180 degrees is obtained according to the first sensing signals, and the high-precision angle value of the magnetic field in the range of 360 degrees is obtained according to the two second sensing signals and the high-precision angle value of the magnetic field in the range of 180 degrees.

2. The magnetic angle sensor according to claim 1, wherein the number of the magneto-resistive sensors is two, each magneto-resistive sensor is an AMR sensor, each AMR sensor is a Wheatstone full bridge structure, each AMR sensor senses a magnetic field component parallel to a surface thereof,

the two AMR sensors are referred to as a first AMR sensor and a second AMR sensor, respectively, wherein the second AMR sensor is rotated by a first predetermined angle with respect to the first AMR sensor on a plane,

and performing inverse trigonometric function operation on the basis of two first sensing signals output by the two AMR sensors to obtain a high-precision angle value of the magnetic field within a 180-degree range.

3. The magnetic angle sensor according to claim 2, wherein each AMR sensor includes a power source terminal, a first output terminal, a ground terminal, a second output terminal, a first AMR resistor connected between the power source terminal and the first output terminal, a second AMR resistor connected between the first output terminal and the ground terminal, a third AMR resistor connected between the ground terminal and the second output terminal, a fourth AMR resistor connected between the second output terminal and the power source terminal, the first output terminal and the second output terminal outputting the first sensing signal, and an angle between an equivalent direction of a current flowing in each AMR resistor of the first AMR sensor and an equivalent direction of a current flowing in a corresponding AMR resistor of the second AMR sensor is the first predetermined angle.

4. A magnetic angle sensor according to claim 3, wherein the four AMR resistors of each AMR sensor are equally spaced around a center,

the eight AMR resistors of the two AMR sensors are equally spaced around the same center, which is the center of the magnetoresistive sensor,

the four AMR resistors of the first AMR sensor and the four AMR resistors of the second AMR sensor are alternately spaced apart from each other,

the predetermined angle is one of 45 degrees, 135 degrees, 225 degrees, and 315 degrees.

5. The magnetic angle sensor according to claim 2, wherein the first sensing signal output from the first AMR sensor is S11, the first sensing signal output from the first AMR sensor is S12, and the magnetic field has an angle value of 1/2arctan (S11/S12) or 1/2arctan (S12/S11) with high accuracy in a range of 180 degrees.

6. A magnetic angle sensor according to any one of claims 1 to 5, wherein the pair of Hall sensors are respectively referred to as a first Hall sensor and a second Hall sensor,

each hall sensor is a horizontal hall sensor which can sense a magnetic field component perpendicular to the surface thereof,

the connecting line L1 of the center of the first Hall sensor and the center of the magnetic resistance sensor is perpendicular to the connecting line L2 of the center of the second Hall sensor and the center of the magnetic resistance sensor, and the distance from the center of the first Hall sensor to the center of the magnetic resistance sensor is equal to the distance from the center of the second Hall sensor to the center of the magnetic resistance sensor.

7. The magnetic angle sensor of claim 6, wherein determining whether the angle of the magnetic field is in the range of 0-180 degrees or 180-360 degrees based on the two second sensing signals is followed by combining the high precision angle value of the magnetic field in the range of 180 degrees to obtain the high precision angle value of the magnetic field in the range of 360 degrees.

8. The magnetic angle sensor according to claim 7, wherein a low-precision angle value of the magnetic field in a 360 degree range is obtained from two second sensing signals,

and determining whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees according to the low-precision angle value of the magnetic field in the range of 360 degrees.

9. The magnetic angle sensor according to claim 8, wherein the second sensing signal output by the first hall sensor is S21, the second sensing signal output by the second hall sensor is S22, and the low-precision angle value of the magnetic field in the 360 degree range is arctan (S21/S22) or arctan (S22/S21).

10. The magnetic angle sensor according to claim 7, wherein,

it also includes: two comparators, each comparing a second sensing signal with a predetermined threshold to obtain a high-low level signal,

and determining whether the angle of the magnetic field is in the range of 0-180 degrees or in the range of 180-360 degrees according to the two high-low level signals.

11. The magnetic angle sensor according to claim 6, wherein,

each Hall sensor is in a cross shape and comprises a power end, a first output end, a grounding end and a second output end, wherein the power end, the first output end, the grounding end and the second output end are respectively positioned at the four tail ends of the cross shape,

each Hall sensor is a horizontal Hall sensor prepared by adopting a CMOS (complementary metal oxide semiconductor) process

The cross shape is an N well implanted and formed on the P type semiconductor substrate.

12. A magnetic angle sensor according to claim 1, characterized in that it works in conjunction with a magnet mounted on one side of the magnetic angle sensor, which magnet rotates along a centre in operation, the centre of rotation of the magnet coinciding with the projection of the centre of the magneto resistive sensor.

13. The magnetic angle sensor according to claim 1, wherein,

the two Hall sensors and the magnetic resistance sensor are integrated in the signal processing wafer to form a magnetic angle sensor chip; or alternatively

The two Hall sensors are integrated in one signal processing wafer, the magneto-resistance sensor wafer is manufactured independently, and then the signal processing wafer integrated with the Hall sensors and the magneto-resistance sensor wafer are wire-bonded and packaged into one magnetic angle sensor chip.