CN117031889B - Single-layer positive photoresist photoetching method - Google Patents
Single-layer positive photoresist photoetching method Download PDFInfo
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- CN117031889B CN117031889B CN202311098968.8A CN202311098968A CN117031889B CN 117031889 B CN117031889 B CN 117031889B CN 202311098968 A CN202311098968 A CN 202311098968A CN 117031889 B CN117031889 B CN 117031889B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 112
- 238000001259 photo etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000002356 single layer Substances 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims 8
- 238000007654 immersion Methods 0.000 claims 1
- 239000000084 colloidal system Substances 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 239000012530 fluid Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a single-layer positive photoresist photoetching method. Spin-coating positive photoresist on a substrate to form a photoresist layer, soft baking the photoresist layer, placing the photoresist layer under a photoetching plate, adding an optical diffusion sheet between a photoetching machine lens and the photoetching plate, plating a glass film on the surface of the optical diffusion sheet, and then exposing the photoresist layer. In the exposure process, as the optical diffusion sheet is additionally arranged between the lens of the photoetching machine and the photoetching plate, the incident light is uniformly diffused to form a near-lambertian light source which is completely diffused, the area of the bottom area of the photoresist layer, which is subjected to illumination, is increased, the area of the etched area at the bottom of the photoresist layer after development is larger, the appearance of a narrow undercut at the bottom, which is wide at the top, is formed, the metal stripping is facilitated, and the colloid collapse caused after development can be avoided.
Description
Technical Field
The invention relates to the technical field of metal stripping processes, in particular to a single-layer positive photoresist photoetching method.
Background
The metal stripping process (lift-off) is typically achieved in this manner: firstly, forming a photoresist coating with an undercut-cut structure on a substrate by using a photoetching process, then plating a metal film by using a plating process, finally removing part of the photoresist and an attached metal film on the photoresist by using a metal stripping solvent (or a mechanical method), and remaining a metal layer consistent with a target pattern. The key in this process is the formation of a photoresist coating with undercut structures.
The prior art is typically implemented using negative photoresist, inverted photoresist, or bilayer photoresist. The resolution of the negative photoresist is poor, and the line width is not easy to manufacture when the line width is below 2 um. The reverse photoresist has higher performance requirements on photoresist and higher temperature precision requirements on reverse baking. Some DNQ-based photoresists have nitrogen released during exposure and bubbles formed during the reverse bake. The double-layer photoresist has the advantages of complex process, high control difficulty, especially lateral expansion depth of the bottom layer, and easy colloid collapse after excessive development.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects of low resolution and complex manufacturing process of the photoresist in the prior art, thereby providing a photoetching method capable of realizing metal stripping by using only a single-layer positive photoresist.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a single-layer positive photoresist photoetching method is applied to a metal stripping process and comprises the following steps:
spin-coating a positive photoresist on a substrate to form a photoresist layer;
soft baking the photoresist layer;
an optical diffusion sheet is arranged between a lens of a photoetching machine and a photoetching plate, the photoetching adhesive layer is placed under the photoetching plate, and a glass film is plated on the surface of the optical diffusion sheet;
exposing the photoresist layer by using positive light;
developing the photoresist layer by using a developer;
carrying out metal plating on the photoresist layer and the substrate;
and placing the substrate and the photoresist layer into stripping liquid for soaking so as to separate the photoresist layer from the substrate.
According to some embodiments of the invention, the glass film is a milky glass film.
According to some embodiments of the invention, the glass film thickness is 0.25-0.65mm.
According to some embodiments of the present invention, when the photoresist layer is soft-baked, a substrate on which the photoresist layer is formed is placed on a hot plate to soft-bake the photoresist layer, wherein the soft-bake temperature is 95-105 ℃ and the soft-bake time is 50-70 seconds.
According to some embodiments of the invention, the photoresist layer and the substrate are metallized, the metallized layer being three layers.
According to some embodiments of the invention, the three layers of the metal coating are titanium, platinum and gold, respectively, and the titanium coating has a thickness of 20nm, the platinum coating has a thickness of 50nm, and the gold coating has a thickness of 300nm.
According to some embodiments of the invention, the substrate and the photoresist layer are immersed in the stripping solution for a period of 13-17 minutes.
According to some embodiments of the invention, the stripping solution is N-methylpyrrolidone, and the temperature of the stripping solution is 80-90 ℃.
According to some embodiments of the invention, the substrate and the photoresist layer are rinsed with a cleaning solution after being immersed in a stripping solution.
According to some embodiments of the invention, the cleaning fluid is isopropyl alcohol.
The technical scheme of the invention has the following advantages:
1. according to the single-layer positive photoresist photoetching method provided by the invention, positive photoresist is spin-coated on a substrate to form a photoresist layer, after the photoresist layer is subjected to soft baking treatment, the photoresist layer is placed under a photoetching plate, an optical diffusion sheet is additionally arranged between a lens of a photoetching machine and the photoetching plate, a glass film is plated on the surface of the optical diffusion sheet, and then the photoresist layer is subjected to exposure treatment, in the exposure process, as the optical diffusion sheet is additionally arranged between the lens of the photoetching machine and the photoetching plate, incident light is uniformly diffused to form a near-lambertian light source which is completely diffused, the area of the bottom area of the photoresist layer subjected to illumination is increased, the area of the etched area of the bottom of the photoresist layer is larger after development, the appearance of wide bottom and narrow undercut is formed, metal stripping is facilitated, and colloid collapse caused after development can be avoided. The single-layer positive photoresist photoetching method provided by the invention adopts positive photoresist, realizes the stripping of small-linewidth metal, reduces the difficulty of metal stripping, and can avoid colloid collapse caused by development.
2. According to the single-layer positive photoresist photoetching method provided by the invention, the glass film is a milky glass film so as to be suitable for light sources with different wavelengths, thereby improving the practicability.
3. According to the single-layer positive photoresist photoetching method provided by the invention, after the substrate and the photoresist layer are placed in stripping liquid for soaking, the substrate is washed by using a cleaning liquid, and metal stripping is further carried out, so that the required undercut structure pattern is obtained.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic illustration of a diffused light path formed in a photoresist layer by a UV light source after an optical diffuser is added in some embodiments of the present invention;
fig. 2 is an undercut profile of a photoresist layer formed after development in some embodiments of the invention.
Reference numerals illustrate: 1. a substrate; 2. a photoresist layer; 3. a photolithography plate; 4. an optical diffusion sheet; 5. and (3) a glass film.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention provides a single-layer positive photoresist photoetching method which is applied to a metal stripping process and comprises the following steps: spin-coating a positive photoresist on the substrate 1 to form a photoresist layer 2; soft baking the photoresist layer 2; an optical diffusion sheet 4 is arranged between a lens of a photoetching machine and a photoetching plate 3, a photoetching adhesive layer 2 is arranged right below the photoetching plate 3, and a glass film 5 is plated on the surface of the optical diffusion sheet 4; performing exposure treatment on the photoresist layer 2 by using positive light; developing the photoresist layer 2 using a developer; metal plating is carried out on the photoresist layer 2 and the substrate 1; the substrate 1 and the photoresist layer 2 are immersed in a stripping solution to disengage the photoresist layer 2 from the substrate 1.
Specifically, a positive photoresist is spin-coated on a substrate 1 to form a photoresist layer 2, after the photoresist layer 2 is subjected to soft baking treatment, the photoresist layer 2 is placed under a photoresist plate 3, an optical diffusion sheet 4 is additionally arranged between a lens of a photoetching machine and the photoresist plate 3, a glass film 5 is plated on the surface of the optical diffusion sheet 4, and then the photoresist layer 2 is subjected to exposure treatment, in the exposure process, as the optical diffusion sheet 4 is additionally arranged between the lens of the photoetching machine and the photoresist plate 3, incident light is uniformly diffused to form a near-lambertian light source which is completely diffused, the area of the bottom area of the photoresist layer 2 subjected to illumination is increased, the area of the etched bottom of the photoresist layer 2 is larger after development, the appearance of wide bottom and narrow top undercut is formed, metal stripping is facilitated, and colloid collapse caused after development can be avoided.
As shown in fig. 1, a glass film 5 was coated on the surface of the optical diffusion sheet 4 to form a random diffuse scattering near-lambertian light source.
It can be understood that the single-layer positive photoresist photoetching method provided by the invention adopts positive photoresist to realize the stripping of small-linewidth metal, reduce the difficulty of metal stripping, and simultaneously avoid colloid collapse caused by development.
It is understood that the type of positive photoresist used in the present invention is not a limitation of the present invention. And (3) realizing a metal coating by adopting an evaporation mode, and carrying out development treatment by using a developing solution before metal evaporation to obtain the undercut morphology of the photoresist layer 2 shown in fig. 2. The developing solution is positive photoresist developing solution, specifically positive photoresist developing solution containing 2-3% tetramethyl ammonium hydroxide, and the developing treatment time is 350-450 seconds.
In some embodiments of the present invention, the glass film 5 is a milky glass film 5. Specifically, the glass film 5 is a milky glass film 5, so as to be suitable for light sources with various colors, thereby improving practicability.
In some embodiments of the invention, the glass film 5 has a thickness of 0.25-0.65mm.
In some embodiments of the present invention, when the photoresist layer 2 is soft-baked, the substrate 1 on which the photoresist layer 2 is formed is placed on a hot plate to soft-bake the photoresist layer 2 at a soft-bake temperature of 95-105 c for 50-70 seconds.
In some embodiments of the present invention, the photoresist layer 2 and the substrate 1 are metal-plated, with three layers of metal plating.
In some embodiments of the invention, the three metal layers are titanium, platinum, and gold, respectively, and the titanium has a coating thickness of 20nm, the platinum has a coating thickness of 50nm, and the gold has a coating thickness of 300nm.
Specifically, the number of layers and the thickness of the metal plating layer are not limited to the present invention, and in some embodiments of the present invention, the metal plating layer is three layers, namely titanium, platinum and gold, and the metal is not limited to the present invention, and may be nickel or other metals. For cost reasons, the coating thickness of titanium is 20nm, the coating thickness of platinum is 50nm, and the coating thickness of gold is 300nm.
In some embodiments of the invention, the substrate 1 and photoresist layer 2 are immersed in the stripping solution for a period of 13-17 minutes.
According to some embodiments of the invention, the stripping solution is N-methylpyrrolidone, and the temperature of the stripping solution is 80-90 ℃.
In some embodiments of the present invention, after the substrate 1 and the photoresist layer 2 are immersed in the stripping solution, the substrate 1 is rinsed with a cleaning solution.
Specifically, after the substrate 1 and the photoresist layer 2 are immersed in a stripping solution, the substrate 1 is rinsed with a cleaning solution, and further metal stripping is performed, so that a desired undercut structure pattern is obtained. It will be appreciated that the cleaning fluid isopropyl alcohol is placed in a two fluid gun and swept using a two fluid gun to remove photoresist on the substrate 1 and a small amount of metal film remaining at the edge of the substrate 1 to obtain an undercut image for metal lift-off.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (10)
1. A single-layer positive photoresist photoetching method is applied to a metal stripping process and is characterized by comprising the following steps:
spin-coating a positive photoresist on a substrate (1) to form a photoresist layer (2);
carrying out soft baking treatment on the photoresist layer (2);
an optical diffusion sheet (4) is arranged between a lens of a photoetching machine and a photoetching plate (3), the photoetching adhesive layer (2) is placed under the photoetching plate (3), and a glass film (5) is plated on the surface of the optical diffusion sheet (4);
exposing the photoresist layer (2) with positive light;
developing the photoresist layer (2) with a developer;
-metallizing said photoresist layer (2) and said substrate (1);
the substrate (1) and the photoresist layer (2) are placed in a stripping solution for soaking, so that the photoresist layer (2) is separated from the substrate (1).
2. A single layer positive photoresist lithography method according to claim 1, wherein said glass film (5) is a milky glass film (5).
3. A single layer positive photoresist lithography method according to claim 2, wherein said glass film (5) has a thickness of 0.25-0.65mm.
4. The single-layer positive photoresist lithography method according to claim 1, wherein when the photoresist layer (2) is subjected to a soft baking process, the substrate (1) on which the photoresist layer (2) is formed is placed on a hot plate to soft bake the photoresist layer (2), the soft baking temperature being 95-105 ℃ and the soft baking time being 50-70 seconds.
5. A single layer positive photoresist lithography method according to claim 1, characterized in that said photoresist layer (2) and said substrate (1) are metal coated with three layers.
6. The single layer positive photoresist lithography method according to claim 5, wherein the three metal plating layers are titanium, platinum and gold, respectively, and the plating thickness of titanium is 20nm, the plating thickness of platinum is 50nm, and the plating thickness of gold is 300nm.
7. A single layer positive photoresist lithography method according to claim 1, characterized in that the immersion time of the substrate (1) and the photoresist layer (2) in the stripping solution is 13-17 minutes.
8. The method of claim 7, wherein the stripping solution is N-methylpyrrolidone, and the temperature of the stripping solution is 80-90 ℃.
9. A single layer positive photoresist lithography method according to claim 1, characterized in that after the substrate (1) and the photoresist layer (2) are immersed in a stripping solution, the substrate (1) is rinsed with a cleaning solution.
10. The single layer positive photoresist lithography method of claim 9, wherein said cleaning solution is isopropyl alcohol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311098968.8A CN117031889B (en) | 2023-08-29 | 2023-08-29 | Single-layer positive photoresist photoetching method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311098968.8A CN117031889B (en) | 2023-08-29 | 2023-08-29 | Single-layer positive photoresist photoetching method |
Publications (2)
| Publication Number | Publication Date |
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| CN117031889A CN117031889A (en) | 2023-11-10 |
| CN117031889B true CN117031889B (en) | 2024-04-02 |
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| CN202311098968.8A Active CN117031889B (en) | 2023-08-29 | 2023-08-29 | Single-layer positive photoresist photoetching method |
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| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN102520591A (en) * | 2011-12-15 | 2012-06-27 | 东南大学 | Negative photoresist-based diffuser photo-etching process |
| CN103293850A (en) * | 2013-05-08 | 2013-09-11 | 中国电子科技集团公司第五十五研究所 | Single-layered positive photoresist photoetching method applied to metal stripping |
| WO2017011931A1 (en) * | 2015-07-20 | 2017-01-26 | 潍坊星泰克微电子材料有限公司 | Method for depositing metal configuration using photoresist |
| CN108398860A (en) * | 2018-03-21 | 2018-08-14 | 福建中科光芯光电科技有限公司 | A kind of stripping means of semiconductor laser chip metal |
| CN108803261A (en) * | 2018-06-08 | 2018-11-13 | 大连芯冠科技有限公司 | The metallic pattern processing method for facilitating single layer positive photoresist to remove |
| CN111522208A (en) * | 2020-05-06 | 2020-08-11 | 南京南大光电工程研究院有限公司 | Method for stripping metal film by using positive photoresist as mask |
| CN112864798A (en) * | 2021-01-26 | 2021-05-28 | 威科赛乐微电子股份有限公司 | Preparation method of VCSEL chip metal film electrode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230185201A1 (en) * | 2021-12-13 | 2023-06-15 | Changxin Memory Technologies, Inc. | Method of forming photoresist pattern and projection exposure apparatus |
-
2023
- 2023-08-29 CN CN202311098968.8A patent/CN117031889B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN102520591A (en) * | 2011-12-15 | 2012-06-27 | 东南大学 | Negative photoresist-based diffuser photo-etching process |
| CN103293850A (en) * | 2013-05-08 | 2013-09-11 | 中国电子科技集团公司第五十五研究所 | Single-layered positive photoresist photoetching method applied to metal stripping |
| WO2017011931A1 (en) * | 2015-07-20 | 2017-01-26 | 潍坊星泰克微电子材料有限公司 | Method for depositing metal configuration using photoresist |
| CN108398860A (en) * | 2018-03-21 | 2018-08-14 | 福建中科光芯光电科技有限公司 | A kind of stripping means of semiconductor laser chip metal |
| CN108803261A (en) * | 2018-06-08 | 2018-11-13 | 大连芯冠科技有限公司 | The metallic pattern processing method for facilitating single layer positive photoresist to remove |
| CN111522208A (en) * | 2020-05-06 | 2020-08-11 | 南京南大光电工程研究院有限公司 | Method for stripping metal film by using positive photoresist as mask |
| CN112864798A (en) * | 2021-01-26 | 2021-05-28 | 威科赛乐微电子股份有限公司 | Preparation method of VCSEL chip metal film electrode |
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| CN117031889A (en) | 2023-11-10 |
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